Method for forming semiconductor structure
CN110660672BActive Publication Date: 2025-03-18TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Patent Information
- Application Number
- CN201910575177.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2019-05-20
- Filing Date
- 2019-06-28
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2040-03-24
Smart Images
Figure CN110660672B_ABST
Abstract
Provided are a method for forming a semiconductor structure, and a method and apparatus for performing a high pressure annealing process when forming a semiconductor device. The high pressure annealing process may be a high pressure dry high pressure annealing process, wherein the pressurized environment of the annealing includes one or more process gases. The high pressure annealing process may be a wet annealing process, wherein the pressurized environment of the annealing includes steam.
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Semiconductor device and manufacture method thereof
CN104217949A
Thin-film el element and composite substrate
JP2004006288A