压电层具有插入结构的体声波谐振器、滤波器和电子设备
By setting a composite insertion structure in the piezoelectric layer, including insertion protrusions and insertion wing bridges, the problem of limited quality factor improvement at the parallel resonant frequency in existing thin-film bulk acoustic resonators is solved, achieving higher parallel resonant impedance and better energy leakage control.
CN111010104BActive Publication Date: 2026-07-17TIANJIN UNIV +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TIANJIN UNIV
- Filing Date
- 2019-09-02
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing thin-film bulk acoustic resonators have limited effectiveness in improving the quality factor (Qp or Rp) at parallel resonant frequencies, and it is difficult to further improve them through traditional structures.
Method used
A composite insertion structure, including insertion protrusions and insertion wing bridges, is set in the piezoelectric layer. By using a combination of metal and dielectric or air materials, the boundary acoustic wave reflection and impedance mismatch are enhanced, and lateral leakage is reduced.
Benefits of technology
It significantly improves the quality factor (Rp) at the parallel resonant frequency, enhancing the filter's performance, particularly the impedance at the parallel resonant frequency, thus mitigating energy leakage issues.
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Figure CN111010104B_ABST
Abstract
本发明涉及体声波谐振器，包括：基底；声学镜；底电极；顶电极；压电层，其中：声学镜、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；所述压电层中设置有沿所述有效区域的边缘布置的复合插入结构，所述复合插入结构包括第一插入层和第二插入层，在所述谐振器的俯视图中，所述第一插入层的至少一部分与所述有效区域重叠，且在所述谐振器的俯视图中，所述第一插入层与所述第二插入层至少部分重叠；所述第一插入层为金属材料且所述第二插入层为空气或介质材料，或者所述第一插入层为介质材料且所述第二插入层为空气。本发明还涉及滤波器与电子设备。
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