Light emitting module and automotive lighting device comprising the same

Abstract

A light emitting module and a vehicle lighting device including the same are disclosed. The light emitting module includes a module substrate, a light emitting device on the module substrate, and a light guide structure spaced apart from the module substrate and surrounding the light emitting device in a plan view. The light emitting device includes first and second pixels each including a light emitting diode (LED) chip emitting light at a wavelength in a blue or ultraviolet range, and a wavelength conversion material on a top surface of at least one of the first and second pixels.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2018-0139021, filed with the Korean Intellectual Property Office on November 13, 2019, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a light-emitting module, and more specifically, to a light-emitting module including a light guide structure. Background Technology

[0004] For example, a light-emitting diode (LED) is a device that emits light from a material contained within it. The LED emits light derived from energy conversion due to the recombination of electrons and holes contained within a semiconductor. Such LEDs are currently widely used in lighting, display devices, and light sources, and their development has accelerated. As LEDs become more widely used in applications, there is a need for technologies to improve the luminous efficiency and / or reliability of LED modules. Furthermore, the miniaturization or shrinking of electronic products leads to further demands for the compactness of LED modules used in electronic products. Summary of the Invention

[0005] Some exemplary embodiments of the present invention provide light-emitting modules with improved luminous efficiency.

[0006] Some exemplary embodiments of the present invention provide a more compact light-emitting module.

[0007] According to some exemplary embodiments of the present invention, a light-emitting module may include: a module substrate; a light-emitting device located on the module substrate; and a light-guiding structure spaced apart from the module substrate and surrounding the light-emitting device in a plan view. The light-emitting device includes: a first pixel and a second pixel, both of which include a light-emitting diode (LED) chip configured to emit light with wavelengths in the blue or ultraviolet range; and a wavelength conversion material located on the top surface of at least one of the first pixel and the second pixel.

[0008] According to some exemplary embodiments of the present invention, a light-emitting module may include: a module substrate; a light-emitting device located on the module substrate; and a light-guiding structure spaced apart from the module substrate and guiding light emitted from the light-emitting device. The light-emitting device includes: a first pixel and a second pixel, both of which include a light-emitting diode (LED) chip configured to emit light with wavelengths in the blue or ultraviolet range; and a wavelength conversion material located on the top surface of at least one of the first pixel and the second pixel.

[0009] According to some exemplary embodiments of the present invention, an automotive lighting device may include: a module substrate; a light-emitting device located on the module substrate; and a light-guiding structure spaced apart from the module substrate and guiding light emitted from the light-emitting device. The light-emitting device includes: a first pixel and a second pixel, both of which include a light-emitting diode chip (LED) configured to emit light with wavelengths in the blue or ultraviolet range; and a wavelength conversion material located on the top surface of at least one of the first pixel and the second pixel. Attached Figure Description

[0010] Figure 1A A plan view illustrating a light-emitting module according to some example embodiments is shown.

[0011] Figure 1B It shows along Figure 1A The sectional view taken by line AB.

[0012] Figure 1C It shows Figure 1B An enlarged view of part C shown in the image.

[0013] Figure 1D It shows Figure 1B An enlarged view of part D shown in the image.

[0014] Figure 1E and Figure 1F A cross-sectional view illustrating a light-emitting structure according to some example embodiments is shown.

[0015] Figure 2A A plan view illustrating a light-emitting module according to some example embodiments is shown.

[0016] Figure 2B It shows along Figure 2A A sectional view taken from line A'-B'.

[0017] Figures 3A to 3I A cross-sectional view is shown illustrating a method for manufacturing a light-emitting device according to some example embodiments.

[0018] Figure 3J It shows Figure 3H An enlarged view of part E shown in the image.

[0019] Figure 4A and Figure 4B A cross-sectional view is shown illustrating a method for manufacturing a light-emitting device according to some example embodiments.

[0020] Figures 5A to 5F A cross-sectional view is shown illustrating a method for manufacturing a light-emitting device according to some example embodiments.

[0021] Figures 6A to 6C A cross-sectional view is shown illustrating a method for manufacturing a light-emitting device according to some example embodiments.

[0022] Figure 7 A cross-sectional view of a light-emitting module according to some example embodiments is shown.

[0023] Figure 8A A plan view illustrating a light-emitting module according to some example embodiments is shown.

[0024] Figure 8B It shows along Figure 8A A sectional view taken from line A”-B”.

[0025] Figure 9 A cross-sectional view of a light-emitting module according to some example embodiments is shown.

[0026] Figure 10 A perspective view of an automotive lighting device according to some example embodiments is shown. Detailed Implementation

[0027] In this specification, the same reference numerals may denote the same components. A light-emitting device and a light-emitting module including the light-emitting device, based on the present invention, will now be described.

[0028] Figure 1A A plan view illustrating a light-emitting module according to some example embodiments is shown. Figure 1B It shows along Figure 1A The sectional view taken by line AB. Figure 1C It shows Figure 1B An enlarged view of part C shown. Figure 1D It shows Figure 1B An enlarged view of part D shown.

[0029] Reference Figure 1A and Figure 1B The light-emitting module 1 may include a module substrate 1000, a light-emitting device 2000, and / or a light guide structure 3000. The module substrate 1000 may include, for example, a printed circuit board (PCB). The module substrate 1000 may include substrate pads 1100 on its top surface. The substrate pads 1100 may include a conductive material such as metal and may be coupled to connection lines 1005 in the module substrate 1000.

[0030] The light-emitting device 2000 can be mounted on the module substrate 1000. The light-emitting device 2000 can be used as a light emitter. Therefore, the light-emitting module 1 can have a smaller size and / or weight.

[0031] The light-emitting device 2000 may include a connection pad 460, and when viewed in a plan view, the connection pad 460 may be disposed on an edge region of the light-emitting device 2000. The connection pad 460 may include a conductive material such as metal. The connection pad 460 may serve as a terminal of the light-emitting device 2000. For example, the connection pad 460 may have a bonding line 800 coupled to the connection pad 460 and the substrate pad 1100. The bonding line 800 may include a conductive material such as gold (Au). The light-emitting device 2000 may be electrically connected to the module substrate 1000 via the connection pad 460 and the bonding line 800. In this specification, the phrase "electrically connected / coupled to the module substrate 1000" may refer to "connection line 1005 electrically connected / coupled to the module substrate 1000". Figure 1B In all figures except those shown, the connecting line 1005 is not shown for simplicity. In some embodiments, neither the bonding line 800 nor the connecting pad 460 is provided, and the substrate pad 1100 may be provided on the bottom surface of the light-emitting device 2000. Electrodes (not shown) may be provided in the module substrate 1000. The substrate pad 1100 may be coupled to the first electrode pattern 410 and the second electrode pattern 420 respectively via electrodes, as will be discussed below.

[0032] The light-emitting device 2000 may have multiple pixels PX. When viewed in a plan view, the pixels PX may form a pixel array. For example, the light-emitting device 2000 may have a pixel array including the pixels PX. When viewed in a plan view, the pixels PX may be arranged two-dimensionally along a first direction D1 and a second direction D2. The first direction D1 and the second direction D2 may be parallel to the top surface of the module substrate 1000. The second direction D2 may intersect the first direction D1. The pixel array may be disposed in the central region of the light-emitting device 2000. When viewed in a plan view, the pixel array may be spaced apart from the connection pads 460. The pixels PX may have substantially the same size. For example, each pixel PX may have a width and length of about 1 μm to about 3000 μm. The pixels PX may be spaced apart from each other at a substantially regular interval. For example, the pixels PX may be arranged at a spacing of about 1 μm to about 1500 μm. In other embodiments, the pixels PX may have different sizes from each other.

[0033] At least two pixels in a pixel PX can emit light of different wavelengths. A pixel PX may include a first pixel PX1 and a second pixel PX2. The first pixel PX1 can be configured to emit light of a first wavelength to produce a first color. The second pixel PX2 can be configured to emit light of a second wavelength different from the first wavelength. The second pixel PX2 can be configured to produce a second color different from the first color. The pixels PX of the light-emitting device 2000 can be electrically isolated from each other. The pixels PX of the light-emitting device 2000 can operate independently of each other. Pixel PX can be defined by a partition 500, such as an isolation wall or an isolation wall structure, which will be discussed below.

[0034] like Figure 1B As shown, the light-emitting device 2000 may include a substrate 100, a pixel isolation pattern 200, a light-emitting diode (LED) chip 300, an isolator 500, and / or phosphor layers 610 and 620. The substrate 100 may include a dielectric material. For example, the substrate 100 may include, but is not limited to, a sapphire substrate, a glass substrate, a transparent conductive substrate, a silicon substrate, or a silicon carbide substrate. Each pixel PX may share the substrate 100. The substrate 100 may overlap with multiple pixels PX.

[0035] LED chips 300 can be disposed on substrate 100. LED chips 300 can be disposed on corresponding pixels PX. When viewed in a plan view, the arrangement of LED chips 300 corresponds to the arrangement of pixels PX. For example, as... Figure 1A As shown, LED chips 300 can be arranged along a first direction D1 and a second direction D2. When the light-emitting device 2000 operates, LED chips 300 can generate light. Each LED chip 300 can emit light of the same intensity. For example, the intensity of light emitted from each LED chip 300 can have a tolerance equal to or less than about 5% of the average intensity of light emitted from each LED chip 300. LED chips 300 can emit light with wavelengths in the blue or ultraviolet range. Each LED chip 300 can emit light of the same wavelength. For example, each LED chip 300 can emit light with a specific peak wavelength. Each LED chip 300 can have a tolerance equal to or less than about 5% of the average peak wavelength of light emitted from each LED chip 300. The specific peak wavelength can be in the range of about 430 nm to about 480 nm. The specific peak wavelength can correspond to blue. Therefore, LED chips 300 can emit blue light.

[0036] Pixel isolation patterns 200 can be disposed between the sidewalls of each LED chip 300. A gap can be formed between the substrate 100 and the bottom surface of the LED chip 300. For example, the pixel isolation pattern 200 can be disposed in a first opening 291, which is disposed between each LED chip 300. The pixel isolation pattern 200 may include a dielectric material. The pixel isolation pattern 200 can physically and electrically isolate each LED chip 300 from each other. Therefore, each LED chip 300 can operate independently of each other. The pixel isolation pattern 200 can be disposed in the gap between the substrate 100 and the bottom surface of the LED chip 300. The pixel isolation pattern 200 may include a buried dielectric layer 220 and / or a liner layer 210.

[0037] An adhesive layer 150 may be disposed between the substrate 100 and the pixel isolation pattern 200. For example, the adhesive layer 150 may be placed between the substrate 100 and the buried dielectric layer 220. The pixel isolation pattern 200 can be adhered to the substrate 100 via the adhesive layer 150. The adhesive layer 150 may include a dielectric material, such as a silicon-based dielectric material or a dielectric polymer. For example, the adhesive layer 150 may include the same material as the buried dielectric layer 220. In some example embodiments, the adhesive layer 150 and the buried dielectric layer 220 may be connected to each other without an interface between them. As another example, the adhesive layer 150 may include a eutectic glue material, such as AuSn or NiSi.

[0038] The isolator 500 can define pixel openings 691 and 692. For example, pixel openings 691 and 692 can be disposed within and surrounded by the isolator 500. The isolator 500 can separate pixel openings 691 and 692 from each other. Figure 1B As shown, the isolator 500 can be disposed on the pixel isolation pattern 200 in the first opening 291. The isolator 500 can be disposed on and in physical contact with the uppermost top surface 200a of the pixel isolation pattern 200. For example, as Figure 1C and Figure 1D As shown, the spacer 500 can contact the uppermost top surface 210a of the pad layer 210. The spacer 500 can include a dielectric material. The spacer 500 can include one or more of, for example, silicon (Si), silicon carbide (SiC), sapphire, and gallium nitride (GaN). The spacer 500 can further extend onto the stacked structure 300S. The spacer 500 can be formed from a silicon substrate.

[0039] The spacer 500 may include a first spacer 510 (e.g., a spacer wall or spacer wall structure) and a second spacer 520 (e.g., a spacer wall or spacer wall structure). The first spacer 510 may be disposed between two adjacent fluorescent layers 610 and 620. Figure 1A As shown, the first isolator 510 may include a segment extending along a first direction D1 and other segments extending along a second direction D2. The second isolator 520 may correspond to the outermost part of the isolator 500. For example, the second isolator 520 and the first isolator 510 may be formed of the same material and connected to each other without an interface between them. When viewed in a plan view, the second isolator 520 may be disposed between the pixel array and the bonding pad 460. The second isolator 520 may surround the phosphor layers 610 and 620. The second isolator 520 may be used to protect the phosphor layers 610 and 620. For example, even when external stress is applied to the light-emitting device 2000, the second isolator 520 may reduce or prevent damage to the phosphor layers 610 and 620 and the first isolator 510. Therefore, the light-emitting device 2000 may have improved durability and / or reliability. When the light-emitting module 1 is used in an automotive headlight, the external stress may include vibration and physical impact. At the same level, the second isolator 520 may have a width greater than that of the first isolator 510. For example, the second spacer 520 may have a top surface that is substantially the same level as the top surface of the first spacer 510, and the width W20 at the top surface of the second spacer 520 may be greater than the width W10 at the top surface of the first spacer 510. The larger width W20 of the second spacer 520 can effectively reduce or prevent damage to the fluorescent layers 610 and 620.

[0040] The isolator 500 may have a trapezoidal cross-section. For example, the width of the bottom surface of the isolator 500 may be greater than the width of its top surface. The isolator 500 allows the LED chip 300 to effectively emit light outward. Therefore, the light-emitting module 1 can improve its luminous efficiency.

[0041] Phosphor layers 610 and 620 can be disposed on the corresponding LED chip 300. Phosphor layers 610 and 620 can be disposed in the corresponding pixel openings 691 and 692. For example, phosphor layers 610 and 620 may include a first phosphor layer 610 and a second phosphor layer 620. Pixel openings 691 and 692 may include a first pixel opening 691 and a second pixel opening 692. The first phosphor layer 610 may be disposed in the first pixel opening 691, and the second phosphor layer 620 may be disposed in the second pixel opening 692. Phosphor layers 610 and 620 may respectively fill pixel openings 691 and 692. For example, the first phosphor layer 610 may fill the first pixel opening 691, and the second phosphor layer 620 may fill the second pixel opening 691. When viewed in a planar view, phosphor layers 610 and 620 may overlap with corresponding pixels PX1 and PX2. For example, the first phosphor layer 610 may overlap with the first pixel PX1, and the second phosphor layer 620 may overlap with the second pixel PX2. The first separator 510 can separate the fluorescent layers 610 and 620 from each other.

[0042] When the light-emitting device 2000 is operational, phosphor layers 610 and 620 can correspondingly convert light emitted from the LED chip 300 into light of a desired wavelength. The first phosphor layer 610 can convert light of a specific wavelength emitted from the corresponding LED chip 300 into light of a wavelength different from that specific wavelength. For example, the first phosphor layer 610 can convert light of a specific wavelength into light of a first wavelength. The first wavelength can be different from the specific wavelength. Light of the first wavelength can produce a first color. Therefore, the first pixel PX1 of the light-emitting device 2000 can produce a first color. The first color can be different from the color of light emitted from the LED chip 300. The second phosphor layer 620 can comprise a material different from that of the first phosphor layer 610. The second phosphor layer 620 can convert light emitted from the corresponding LED chip 300 (e.g., of a specific wavelength) into light of a second wavelength. The second wavelength can be different from the specific wavelength. The second wavelength can be different from the first wavelength. Light of the second wavelength can produce a second color different from the first color. The second color can be different from the color of light emitted from the LED chip 300. The second pixel PX2 of the light-emitting device 2000 can produce a second color. In summary, the light-emitting device 2000 can achieve a variety of colors. For example, one of the first and second colors can be white, and the other color can be amber. However, the first and second colors are not limited to the colors mentioned above, but can be varied. For example, the first color can be a color selected from red, green, and blue, and the second color can be another color selected from red, green, and blue.

[0043] When a light emitting device (e.g., a light emitting chip or a light emitting package) produces monochromatic light, the light emitting module 1 may need to include a plurality of light emitting devices that produce different colors from each other. In some embodiments, since the light emitting device 2000 produces a plurality of colors, the light emitting module 1 can use a single light emitting device 2000 as a light source. The light emitting module 1 can improve luminous efficiency. The light emitting module 1 and a light emitting device including the same can reduce power consumption. Since the light emitting module 1 includes a single light emitting device 2000, the size (e.g., the planar area) of the module substrate 1000 can be reduced. As a result, the light emitting module 1 can have a smaller size and / or weight.

[0044] The first spacer 510 can separate the second fluorescent layer 620 from the first fluorescent layer 610. The first spacer 510 may include a material different from the materials of the first fluorescent layer 610 and the second fluorescent layer 620. The first spacer 510 can prevent or reduce optical interference between respective pixels PX. Therefore, when the light emitting module 1 operates, the color (e.g., a second color) produced from the second pixel PX2 can be different from the color (e.g., a first color) produced from the first pixel PX1. The light emitting module 1 can exhibit improved contrast characteristics.

[0045] Each of the fluorescent layers 610 and 620 may include a resin in which a fluorescent material is distributed. The fluorescent material may include one or more of oxide-based materials, silicate-based materials, nitride-based materials and fluoride-based materials. For example, the fluorescent material may include β-SiAlON:Eu 2+ (green), (Ca,Sr)AlSiN3:Eu 2+ (red), La3Si6N 11 :Ce 3+ (yellow), K2SiF6:Mn4 + (red), SrLiAl3N4:Eu (red), Ln 4-x (Eu z M 1-z ) x Si 12-y Al y O 3+x+y N 18-x-y (0.5≤x≤3, 0<z<0.3, 0<y≤4) (red), K2TiF6:Mn4 + (red), NaYF4:Mn4 + (red) and NaGdF4:Mn4 + (red). However, the fluorescent material is not limited to the types discussed above.

[0046] For example, the fluorescent material included in each of the fluorescent layers 610 and 620 may be the same. Alternatively, one or more of the fluorescent layers 610 and 620 may include at least two types of fluorescent particles with different sizes. In some example embodiments, the fluorescent layers 610 and 620 may have improved color uniformity. The fluorescent layers 610 and 620 may include a wavelength-converting material. The wavelength-converting material can convert light emitted from the LED chip 300 to a specific wavelength. For example, the wavelength-converting material may include a quantum dot fluorescent material having nanoscale particles. The quantum dot fluorescent material may use III-V or II-VI compound semiconductors to have a core-shell structure. For example, the core may include CdSe and / or InP. The shell may include ZnS and / or ZnSe. Additionally, the quantum dot fluorescent material may include ligands to increase the stability of the core and shell. Optionally, additional wavelength-converting particles may also be disposed on the upper part of one or more of the fluorescent layers 610 and 620.

[0047] The reflective layer 530 can also be disposed on the sidewall of the isolator 500. The reflective layer 530 can be located between the isolator 500 and each of the phosphor layers 610 and 620. The reflective layer 530 can reflect light emitted from the LED chip 300 to improve the optical extraction efficiency of the light-emitting device 2000. The reflective layer 530 can also prevent or reduce optical interference between individual pixels PX. For example, the reflective layer 530 can include a metallic material, such as Ag, Al, Ni, Cr, Au, Pt, Pd, Sn, W, Rh, Ir, Ru, Mg, Zn, or combinations thereof. As another example, the reflective layer 530 can be a resin layer comprising a metal oxide. The metal oxide can include titanium oxide or aluminum oxide. The resin layer can include polyphthalamide (PPA). As another example, the reflective layer 530 can be a distributed Bragg reflector (DBR). A distributed Bragg reflector can include multiple layers (not shown), one of which has a refractive index different from that of the adjacent layers. Distributed Bragg reflectors may include oxides (e.g., SiO2, TiO2, Al2O3 and / or ZrO2), nitrides (e.g., SiN, Si3N4, TiN, AlN, TiAlN and / or TiSiN), and oxynitrides (e.g., SiO2, Ti ...O3, TiN, TiAlN and / or TiSiN). x N y One or more of the following.

[0048] The reflective layer 530 may not be disposed on the outer wall of the second spacer 520. The outer wall of the second spacer 520 may face the inner wall of the second spacer 520, and the inner wall of the second spacer 520 may face the fluorescent layers 610 and 620. For example, the light-emitting device 2000 may not include the reflective layer 530.

[0049] The light guide structure 3000 can be disposed on the module substrate 1000. The light guide structure 3000 may include an optical tube. For example, the light guide structure 3000 may have an elongated cylindrical waveguide. When in... Figure 1A When viewed in the plan view shown, the light guide structure 3000 can have a closed-loop shape. When viewed in the plan view, the light guide structure 3000 can surround the light-emitting device 2000. The light guide structure 3000 can have a diameter A1 that is the same as or larger than the maximum diameter A2 of the pixel array of the light-emitting device 2000. The diameter A2 of the pixel array can indicate the spacing between the outer walls of the outermost phosphor layers 610 and 620 of the phosphor layers 610 and 620, wherein the outermost phosphor layers are arranged in the same direction. The diameter A2 of the pixel array can correspond to the diameter of the pixel array region. The pixel array region can include pixels PX1 and PX2 and a first spacer 510 between pixels PX1 and PX2. The maximum diameter A2 of the pixel array can be in the range of about 10 μm to about 50 mm. The diameter A1 of the light guide structure 3000 can represent the diameter in the same direction as the pixel array having the maximum diameter A2. The diameter A1 of the light guide structure 3000 can represent the diameter measured at the bottom surface 3000b of the light guide structure 3000. The bottom surface 3000b of the light guide structure 3000 can face the light-emitting device 2000 or the module substrate 1000. The light guide structure 3000 can concentrate or guide the light emitted from the light-emitting device 2000. The concentrated light can be emitted outward. The light guide structure 3000 can improve the luminous efficiency of the light-emitting module 1.

[0050] The diameter A1 of the light guide structure 3000 can depend on the number and size of the light emitters included in the light-emitting module 1. In some embodiments, a single light emitter can be used to reduce the diameter A1 of the light guide structure 3000. Because the light-emitting device 2000 is used as the light emitter, the diameter A1 of the light guide structure 3000 can be further reduced. Therefore, the light-emitting module 1 can be more compact. The reduction in the size of the light-emitting module 1 can increase the design freedom of the light-emitting device including the light-emitting module 1.

[0051] The light guide structure 3000 may be spaced apart from the light-emitting device 2000. The distance D10 between the light guide structure 3000 and the light-emitting device 2000 may range from about 0.1 mm to about 5 mm, narrower from about 0.3 mm to about 2 mm, and even narrower from about 0.5 mm to about 1 mm. When the distance D10 between the light guide structure 3000 and the light-emitting device 2000 is less than about 0.1 mm, the light guide structure 3000 may be carbonized due to heat generated from the light-emitting device 2000 during operation. In some example embodiments, the light guiding function of the light guide structure 3000 may be reduced to decrease the luminous efficiency of the light-emitting module 1. When the distance D10 between the light guide structure 3000 and the light-emitting device 2000 is greater than about 5 mm, the light guide structure 3000 may not adequately guide the light emitted from the light-emitting device 2000. In some example embodiments, the light-emitting device 2000 may produce light leakage to reduce the luminous efficiency of the light-emitting module 1.

[0052] For example, an air layer, air gap, or air space can be provided between the light guide structure 3000 and the light-emitting device 2000. The air layer can have a thickness of about 0.1 mm to about 5 mm. As another example, a resin layer (not shown) can be provided between the light guide structure 3000 and the light-emitting device 2000. The resin layer can include the same material as the light guide structure 3000. The resin layer can be transparent. The resin layer can have a thickness of about 0.1 mm to about 5 mm.

[0053] The light guide structure 3000 may include polymers, such as polycarbonate (PC) and / or polymethyl methacrylate (PMMA). The light guide structure 3000 may be relatively transparent, but the inventive concept is not limited thereto.

[0054] Now, the following will refer to Figure 1C and Figure 1D Detailed description of light-emitting devices 2000.

[0055] Reference Figure 1A , Figure 1B , Figure 1C and Figure 1DThe stacked structure 300S may include a first semiconductor layer 310, an active layer 330, and / or a second semiconductor layer 320. Each LED chip 300 may be a portion of the stacked structure 300S. For example, the LED chip 300 may be a portion of the stacked structure 300S defined by the pixel isolation pattern 200. Each LED chip 300 may include a stacked first semiconductor layer 310, an active layer 330, and / or a second semiconductor layer 320. The first semiconductor layer 310 may have a first conductivity type. The first semiconductor layer 310 may include gallium nitride (GaN) doped with a p-type dopant. The p-type dopant may include magnesium (Mg). The second semiconductor layer 320 may have a second conductivity type, different from the first conductivity type. The second semiconductor layer 320 may include gallium nitride (GaN) doped with an n-type dopant. The n-type dopant may include silicon (Si). A buffer layer (not shown) may be further interposed between the second semiconductor layer 320 and the isolation member 500. The buffer layer (not shown) may mitigate lattice mismatch between the isolation member 500 and the second semiconductor layer 320. The active layer 330 may be located between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 330 may comprise a material having multiple quantum wells (MQWs), wherein at least one quantum well layer and at least one quantum barrier layer are alternately stacked. For example, the active layer 330 may comprise alternately stacked gallium nitride (GaN) and indium gallium nitride (InGaN). The material and composition of the active layer 330 can control the peak wavelength of the light emitted from the LED chip 300.

[0056] A first electrode pattern 410 and a second electrode pattern 420 can be disposed on each LED chip 300. The first electrode pattern 410 may include a first upper electrode pattern 411 and / or a first lower electrode pattern 412. The first upper electrode pattern 411 may be disposed on the bottom surface of the LED chip 300 (e.g., on the bottom surface of the first semiconductor layer 310) and may be electrically connected to the first semiconductor layer 310. The first lower electrode pattern 412 may be disposed on the bottom surface of the first upper electrode pattern 411 and may be electrically connected to the first upper electrode pattern 411.

[0057] The second electrode pattern 420 may include a second upper electrode pattern 421 and / or a second lower electrode pattern 422. The second upper electrode pattern 421 may be disposed in the first semiconductor layer 310 and the active layer 330, and may be electrically connected to the second semiconductor layer 320. The second lower electrode pattern 422 may be disposed on the bottom surface of the second upper electrode pattern 421, and may be electrically connected to the second upper electrode pattern 421.

[0058] A dielectric layer 205 may be located between the second upper electrode pattern 421 and the first semiconductor layer 310, and also between the second upper electrode pattern 421 and the active layer 330. Therefore, the second upper electrode pattern 421 may be insulated from the first semiconductor layer 310 and the active layer 330. The dielectric layer 205 may extend to the bottom surface of the first semiconductor layer 310. The dielectric layer 205 may be located between the first upper electrode pattern 411 and the second upper electrode pattern 421. Therefore, the second upper electrode pattern 421 may be insulated from the first upper electrode pattern 411. A pad layer 210 may be located between the first lower electrode pattern 412 and the second lower electrode pattern 422, thus the second lower electrode pattern 422 may be insulated from the first lower electrode pattern 412. The active layer 330 may receive electrical signals applied to the first electrode pattern 410 and the second electrode pattern 420. Therefore, recombination of electrons and holes may occur in the active layer 330, which can lead to the generation of light. The first electrode pattern 410 and the second electrode pattern 420 can have high reflectivity. Both the first electrode pattern 410 and the second electrode pattern 420 can include conductive materials such as metals or transparent conductive oxides.

[0059] The pixel isolation pattern 200 may include a buried dielectric layer 220 and / or a pad layer 210. The pad layer 210 may conformally cover the side and bottom surfaces of the LED chip 300. The pad layer 210 may be disposed on the inner wall and bottom surface of the first opening 291. Therefore, the uppermost top surface 210a of the pad layer 210 may be located at a level substantially the same as the top surface of the LED chip 300. The top surface of each LED chip 300 may correspond to the top surface of the second semiconductor layer 320. The pad layer 210 may cover the sidewalls of the second opening 292, but may not cover the bottom surface of the second opening 292. The pad layer 210 may include, for example, a silicon-based dielectric material. The silicon-based dielectric material may include, for example, silicon oxide or silicon nitride. The buried dielectric layer 220 may be located between the substrate 100 and the pad layer 210, and may fill the first opening 291 and the second opening 292. The buried dielectric layer 220 may include silicone, epoxy, or acrylic resin.

[0060] In some embodiments, the pixel isolation pattern 200 may be configured to reduce or prevent one of the LED chips 300 from receiving light emitted from an adjacent LED chip 300. Therefore, the light-emitting device 2000 can improve contrast characteristics.

[0061] The light-emitting device 2000 may have a second opening 292 on its edge region that penetrates the stacked structure 300S. A bonding pad 460 may be disposed in a corresponding second opening 292. The top surface of the bonding pad 460 may be at substantially the same level as the top surface of the second semiconductor layer 320. The bonding pad 460 may include a first bonding pad 461 and a second bonding pad 462. Figure 1C As shown, a first connection pad 461 may be disposed in one of the second openings 292. A first line pattern 451 may be disposed on the bottom surface of the first lower electrode pattern 412. The first line pattern 451 may extend between the buried dielectric layer 220 and the pad layer 210, and the first line pattern 451 may be disposed on the sidewall of one of the second openings 292. Therefore, the first lower electrode pattern 412 may be coupled to the first connection pad 461 via the first line pattern 451. The first line pattern 451 may include metal. For example, multiple first connection pads 461 may be provided. Multiple first line patterns 451 may be provided. In some example embodiments, each of the first connection pads 461 may be coupled to the first lower electrode pattern 412 of the corresponding pixel PX via the corresponding first line pattern 451.

[0062] like Figure 1D As shown, the second connection pad 462 can be disposed in another of the second openings 292. The second line pattern 452 can be disposed on the bottom surface of the second lower electrode pattern 422 and coupled to the second lower electrode pattern 422. The second line pattern 452 can extend between the buried dielectric layer 220 and the pad layer 210, and can be disposed on another of the second openings 292. Therefore, the second lower electrode pattern 422 can be coupled to the second connection pad 462 via the second line pattern 452. The second line pattern 452 may include, for example, metal. For example, multiple second connection pads 462 can be provided. Multiple second line patterns 452 can be provided. Each of the second connection pads 462 can be coupled to the second lower electrode pattern 422 of the corresponding pixel PX via the corresponding second line pattern 452. The second line pattern 452 can be insulated from the first line pattern 451. The second connection pad 462 can be spaced apart from and electrically isolated from the first connection pad 461. For the sake of brevity, an example including a single first connection pad 461 and a single second connection pad 462 will be described below.

[0063] Figure 1E and Figure 1F A cross-sectional view illustrating a light-emitting structure according to some example embodiments is shown. Figure 1C It shows Figure 1B An enlarged view of part C shown in the image. Figure 1D It shows Figure 1BThe image shows a magnified view of part D. Repeated descriptions of the components discussed above will be omitted below.

[0064] Reference Figure 1B , Figure 1E and Figure 1F The LED chip 300 may include a first semiconductor layer 310, an active layer 330, and / or a second semiconductor layer 320. The top surface of the LED chip 300 may have a non-flat portion 325 corresponding to the top surface of the second semiconductor layer 320. The non-flat portion 325 may contact the phosphor layers 610 and 620. The shape of the bottom surface of the phosphor layers 610 and 620 may correspond to the shape of the non-flat portion 325. For example, the non-flat portion 325 of the LED chip 300 may improve the luminous efficiency of the light-emitting device 2000. For simplicity, the non-flat portion 325 is omitted from the following figures, but the inventive concept is not limited thereto.

[0065] Figure 2A A plan view illustrating a light-emitting module according to some example embodiments is shown. Figure 2B It shows along Figure 2A The cross-sectional view taken along line A'-B'. Repeated descriptions of the components discussed above will be omitted below.

[0066] Reference Figure 2A and Figure 2B The light-emitting module 1A may include a module substrate 1000, a light-emitting device 2000A, and / or a light-guiding structure 3000. The module substrate 1000, the light-emitting device 2000A, and the light-guiding structure 3000 may be the same as those described above. Figure 1A and Figure 1B The basic principles discussed are the same. However, when viewed in a planar view, the pixel PX of the light-emitting device 2000A may include a first pixel PX1 and a second pixel PX2, and also includes a third pixel PX3. The third pixel PX3 may be horizontally spaced from the first pixel PX1 and the second pixel PX2.

[0067] Phosphor layers 610 and 620 may include a first phosphor layer 610 and a second phosphor layer 620, and also include a third phosphor layer 630. The third phosphor layer 630 may be disposed on a third pixel PX3. The third phosphor layer 630 may convert light emitted from the corresponding LED chip 300 at a specific peak wavelength into light at a third wavelength. The third wavelength may be different from the specific peak wavelength. The third wavelength may be different from the first wavelength and the second wavelength. The light at the third wavelength may produce a third color. The third color may be different from the color of the light emitted from the LED chip 300. The third color may be different from the first color and the second color. For example, the first color may be a color selected from red, green, and blue, the second color may be another color selected from red, green, and blue, and the third color may be the remaining color among red, green, and blue. However, the first color, the second color, and the third color are not limited to the colors mentioned above, but may have various colors. In summary, the light-emitting device 2000A can realize various colors.

[0068] The following describes a method for manufacturing a light-emitting device according to some example embodiments.

[0069] Figures 3A to 3I A cross-sectional view is shown illustrating a method for manufacturing a light-emitting device according to some example embodiments. Figure 3J It shows Figure 3H An enlarged view of part E shown. Figures 3A to 3J The description will be based on Figure 1B and Figure 3I Discuss the top surface, bottom surface, upper part, and lower part of any component. In the description... Figures 3A to 3I The time will also refer to Figure 1A .

[0070] Reference Figure 1A and Figure 3A A multilayer structure 300S can be formed on a support substrate 501. The support substrate 501 may include a silicon (Si) substrate, a silicon carbide (SiC) substrate, a sapphire substrate, or a gallium nitride (GaN) substrate. For example, a semiconductor wafer can be used as the support substrate 501. The support substrate 501 can be used as a growth substrate to form the multilayer structure 300S. A second semiconductor layer 320, an active layer 330, and a first semiconductor layer 310 can be sequentially formed on the support substrate 501, which can result in the formation of the multilayer structure 300S. The second semiconductor layer 320, the active layer 330, and the first semiconductor layer 310 may each include components similar to those on the support substrate 501. Figures 1A to 1D The materials discussed are the same.

[0071] The stacked structure 300S can be partially removed to form a hole 309 on each pixel PX. Figures 3A to 3H In this context, pixel PX can be... Figure 3IThe dummy component corresponding to pixel PX of the light-emitting device 2001 shown. Forming the aperture 309 may include: forming a mask pattern (not shown) on the first semiconductor layer 310, and performing an etching process using the mask pattern as an etching mask. The aperture 309 may be formed in the first semiconductor layer 310 and the active layer 330, and may expose the second semiconductor layer 320. A dielectric layer 205 may be formed on the first semiconductor layer 310 and in the aperture 309.

[0072] Reference Figure 1A and Figure 3B A first electrode hole 419 and a second electrode hole 429 can be formed in the dielectric layer 205. The second electrode hole 429 can be disposed in the hole 309 and can expose the second semiconductor layer 320. The first electrode hole 419 can be disposed in the dielectric layer 205 and can expose the first semiconductor layer 310. The second electrode hole 429 can be separated from the first electrode hole 419. A first upper electrode pattern 411 and a second upper electrode pattern 421 can be formed in the first electrode hole 419 and the second electrode hole 429, respectively.

[0073] A first lower electrode pattern 412 and a second lower electrode pattern 422 can be formed on the first upper electrode pattern 411 and the second upper electrode pattern 421, respectively. In some embodiments, an electrode layer can be formed on the first upper electrode pattern 411, the second upper electrode pattern 421, and the dielectric layer 205. Electrolytic plating can be performed to form the electrode layer. The electrode layer can be patterned to form the first lower electrode pattern 412 and the second lower electrode pattern 422. The second lower electrode pattern 422 may include the same material as the first lower electrode pattern 412 and have substantially the same thickness as the first lower electrode pattern 412. The second lower electrode pattern 422 may be spaced apart from and insulated from the first lower electrode pattern 412.

[0074] Reference Figure 1A and Figure 3CA first opening 291 and a second opening 292 can be formed in the stacked structure 300S. The first opening 291 and the second opening 292 can be formed by partially removing the stacked structure 300S. For example, a blade can be used to form the first opening 291 and the second opening 292. Alternatively, the formation of the first opening 291 and the second opening 292 can include forming a mask pattern on the dielectric layer 205 and performing an etching process using the mask pattern as an etching mask. The first opening 291 and the second opening 292 can penetrate the stacked structure 300S and expose the support substrate 501. The formation of the first opening 291 in the stacked structure 300S can form a light-emitting diode (LED) chip 300. When viewed in a plan view, the first opening 291 can form a central region of the stacked structure 300S. The LED chip 300 can be a portion of the stacked structure 300S defined by the first opening 291. The first opening 291 can separate the LED chips 300 from each other. When viewed in a plan view, the second opening 292 can form the edge region of the stacked structure 300S. The second openings 292 can be spaced apart from each other. The second opening 292 can be spaced apart from the first opening 291.

[0075] A pad layer 210 can be formed on the LED chip 300 within the first opening 291 and the second opening 292. The pad layer 210 can conformally cover the first semiconductor layer 310, the first lower electrode pattern 412, the second lower electrode pattern 412, the first opening 291, and the second opening 292. The pad layer 210 can be removed from the bottom surface of the second opening 292. Therefore, the pad layer 210 can expose the support substrate 501 in the second opening 292. The pad layer 210 can remain in the first opening 291 and cover the support substrate 501.

[0076] Reference Figure 1A and Figure 3D The pad layer 210 can be partially removed to expose the first lower electrode pattern 412 and the second lower electrode pattern 422. A first line pattern 451 can be formed on the pad layer 210 to cover the exposed first lower electrode pattern 412. The first line pattern 451 can extend into one of the second openings 292. A second line pattern 452 can be formed on the pad layer 210 to cover the exposed second lower electrode pattern 422. The second line pattern 452 can extend into the other of the second openings 292. For example, the formation of the first line pattern 451 and the second line pattern 452 may include forming a connecting line layer on the pad layer 210, in the first opening 291 and the second opening 292, and then performing a patterning process on the connecting line layer. The second line pattern 452 and the first line pattern 451 can be formed by a single process. The patterning process can insulate the second line pattern 452 from the first line pattern 451 and physically separate it from the first line pattern 451.

[0077] Connection pads 460 can be formed in the corresponding second opening 292. Electroplating can be performed to form the connection pads 460. The connection pads 460 can be in physical contact with the support substrate 501 exposed in the second opening 292. The connection pads 460 may include a first connection pad 461 and a second connection pad 462. The first connection pad 461 can be disposed in one of the second openings 292 and coupled to the first line pattern 451. The first connection pad 461 can be formed after the first line pattern 451 is formed. Alternatively, the first line pattern 451 can be formed after the first connection pad 461 is formed. Differently, the first connection pad 461 and the first line pattern 451 can be formed by a single process.

[0078] The second connection pad 462 may be disposed in the other of the second openings 292 and coupled to the second line pattern 452. The second connection pad 462 may be formed before or after the formation of the second line pattern 452. Alternatively, the second connection pad 462 and the second line pattern 452 may be formed in a single process.

[0079] Reference Figure 1A and Figure 3E A buried dielectric layer 220 can be formed on the pad layer 210, the first line pattern 451, the second line pattern 452, the first connection pad 461, and the second connection pad 462. The buried dielectric layer 220 can fill the first opening 291 and the second opening 292. The formation of the buried dielectric layer 220 can form pixel isolation patterns 200 between LED chips 300. The pixel isolation patterns 200 may include the pad layer 210 and the buried dielectric layer 220.

[0080] A substrate 100 can be disposed on the buried dielectric layer 220. An adhesive layer 150 can be further disposed between the buried dielectric layer 220 and the substrate 100. The adhesive layer 150 can adhere the substrate 100 to the buried dielectric layer 220. The substrate 100 and the buried dielectric layer 220 can be coupled to the substrate 100 disposed on the buried dielectric layer 220. Figure 1A and Figure 1B The basic concepts discussed in the text are the same.

[0081] Reference Figure 1A and Figure 3F The laminated structure 300S to which the substrate 100 is attached can be inverted so that the support substrate 501 faces upward. The support substrate 501 can be thinned as shown by the dashed line. A polishing process can be performed to thin the support substrate 501.

[0082] Reference Figure 1A and Figure 3GThe support substrate 501 can be etched to form the first isolator 510 and pixel openings 691 and 692. The first isolator 510 and pixel openings 691 and 692 can be connected to the substrate above. Figure 1A and Figure 1B The basic principles discussed are the same. For example, the remaining portion of the first isolator 510 and the support substrate 501 may define pixel openings 691 and 692. Pixel openings 691 and 692 may include a first pixel opening 691 and a second pixel opening 692. When viewed in a plan view, each of pixel openings 691 and 692 may be formed on a corresponding pixel in pixels PX1 and PX2. For example, a first pixel opening 691 may be formed on a first pixel PX1, and a second pixel opening 692 may be formed on a second pixel PX2. Pixel openings 691 and 692 may expose the top surface of the second semiconductor layer 320. After forming the first isolator 510, a portion of the support substrate 501 may be retained to cover the first connection pad 461 and the second connection pad 462.

[0083] A reflective layer 530 may be formed on the sidewalls of pixel openings 691 and 692 to cover the sidewalls of the first isolator 510. The reflective layer 530 may further cover the inner wall of the support substrate 501. In some embodiments, an initial reflective layer may be formed on the sidewalls and bottom surfaces of pixel openings 691 and 692, on the top surface of the support substrate 501, and on the top surface of the first isolator 510. The initial reflective layer may be anisotropically etched to form the reflective layer 530. The reflective layer 530 may expose the bottom surfaces of pixel openings 691 and 692, for example, the top surface of the second semiconductor layer 320. Alternatively, the reflective layer 530 may not be formed.

[0084] Reference Figure 1A , Figure 3H and Figure 3J A first fluorescent layer 610 and a second fluorescent layer 620 can be formed in the first pixel opening 691 and the second pixel opening 692, respectively. For example, a distribution process can be performed to provide a first fluorescent material to the first pixel opening 691 to form the first fluorescent layer 610. A distribution process can be performed to provide a second fluorescent material to the second pixel opening 692 to form the second fluorescent layer 620. The second fluorescent material may be different from the first fluorescent material.

[0085] In some embodiments, because fluorescent layers 610 and 620 are formed through a dispensing process, each of fluorescent layers 610 and 620 may have a central portion whose top surface is located at a higher level than the top surfaces of the edge portions of each of the fluorescent layers 610 and 620. For example, as Figure 3JAs shown, the top surface 610a at the center of the first fluorescent layer 610 can be located at a higher level than the top surface 610b at the edge of the first fluorescent layer 610. For the first fluorescent layer 610, the edge portion can be closer to the separator 500 than the center portion. Similarly, the top surface at the center of the second fluorescent layer 620 can be located at a higher level than the top surface at the edge of the second fluorescent layer 620.

[0086] Reference Figure 1A and Figure 3I The support substrate 501 can be etched to form the second isolator 520. In some embodiments, a mask pattern (not shown) can be formed on the first isolator 510 and the first phosphor layer 610 and the second phosphor layer 620. The support substrate 501 can undergo an etching process using the mask pattern as an etching mask. The etching process can etch a portion of the support substrate 501 to form the second isolator 520. The second isolator 520 can expose the first connection pad 461 and the second connection pad 462. Therefore, the isolator 500 can be formed to include the first isolator 510 and the second isolator 520. The second isolator 520 can correspond to the outermost portion of the isolator 500. Figure 1A As shown, the second isolator 520 can be connected to the first isolator 510. The second isolator 520 may include the same material as the first isolator 510. Through the processes discussed above, the light-emitting device 2001 can finally be manufactured.

[0087] Figure 4A and Figure 4B A cross-sectional view illustrating a method for manufacturing a light-emitting device according to some example embodiments is shown. Repeated descriptions of the components discussed above will be omitted below. In the description... Figure 4A and Figure 4B The time will also refer to Figure 2A .

[0088] Reference Figure 2A and Figure 4A An LED chip 300, a dielectric layer 205, a first electrode pattern 410, a second electrode pattern 420, a first line pattern 451, a second line pattern 452, a bonding pad 460, and a pixel isolation pattern 200 can be formed on a support substrate 501, and a substrate 100 can be disposed on the pixel isolation pattern 200. The support substrate 501 can be etched to form a first isolation member 510 and pixel openings 691 and 692. The formation of the LED chip 300, dielectric layer 205, first electrode pattern 410, second electrode pattern 420, pixel isolation pattern 200, first isolation member 510, first pixel opening 691, and second pixel opening 692 can be related to the above-mentioned... Figures 3A to 3G The basic concepts discussed in the text are the same.

[0089] Pixel openings 691 and 692 may include a first pixel opening 691 and a second pixel opening 692, and also include a third pixel opening 693. The formation of the third pixel opening 693 may be related to... Figure 3G The formation of the first pixel opening 691 and the second pixel opening 692 is basically the same. The reflective layer 530 can be formed in the sidewalls of the first pixel opening 691, the second pixel opening 692 and the third pixel opening 693.

[0090] Reference Figure 2A and Figure 4B A first fluorescent layer 610, a second fluorescent layer 620, and a third fluorescent layer 630 can be formed in the first pixel opening 691, the second pixel opening 692, and the third pixel opening 693, respectively. The first fluorescent layer 610 and the second fluorescent layer 620 can be formed through the above-mentioned... Figure 3H The allocation process discussed in the text is used to form the third phosphor layer 630. An allocation process can be performed to fill the third pixel opening 693 with a third phosphor material to form the third phosphor layer 630. The third phosphor material can be different from the first and second phosphor materials. The third phosphor layer 630 can convert light emitted from the LED chip 300 into light of a third wavelength. The third wavelength can be different from the first and second wavelengths. Therefore, the third pixel PX3 can produce a third color, which is different from the first color produced from the first pixel PX1 and the second color produced from the second pixel PX2. The top surface at the central portion of the third phosphor layer 630 can be located at a higher level than the top surface at the edge portions of the third phosphor layer 630.

[0091] The support substrate 501 can be etched to form the second spacer 520. The etching of the support substrate 501 and the formation of the second spacer 520 can be combined with the above-described process. Figure 3I The basic principles discussed above are the same. The second isolation element 520 can expose the first connection pad 461 and the second connection pad 462. Through the processes discussed above, the light-emitting device 2001A can finally be manufactured. The light-emitting device 2001A can produce three colors. For example, the light-emitting device 2001A can achieve a first color, a second color, and a third color.

[0092] Figures 5A to 5F A cross-sectional view illustrating a method for manufacturing a light-emitting device according to some example embodiments is shown. In the description... Figures 5A to 5F The time will also refer to Figure 1A The repeated descriptions of the components discussed above will be omitted below.

[0093] Reference Figure 1A and Figure 5AAn LED chip 300, a dielectric layer 205, electrode patterns 410 and 420, line patterns 451 and 452, connecting pads 460, pixel isolation patterns 200, and a substrate 100 can be disposed on a support substrate 501. The formation of the LED chip 300, dielectric layer 205, electrode patterns 410 and 420, line patterns 451 and 452, connecting pads 460, and pixel isolation patterns 200 can be coordinated with the above-mentioned components. Figures 3A to 3F The basic concepts discussed in the text are the same.

[0094] A first mask layer 910 can be formed on the support substrate 501 to expose the top surface of the support substrate 501. When viewed in a plan view, the first mask layer 910 can overlap with the second pixel PX2. An etching process using the first mask layer 910 as an etching mask can be performed to etch the support substrate 501 to form a first pixel opening 691 in the support substrate 501. The first pixel opening 691 can be disposed on the first pixel PX1 and can expose the top surface of the second semiconductor layer 320. A first reflective layer 531 can be formed in the first pixel opening 691 and can cover the sidewalls of the first pixel opening 691. The formation of the first reflective layer 531 can include: forming an initial reflective layer to cover the sidewalls and top surface of the first pixel opening 691, and performing a patterning process on the initial reflective layer. The patterning process can expose the top surface of the second semiconductor layer 320 by the first reflective layer 531. The first reflective layer 531 can include the first pixel opening PX2 and the second pixel opening PX2. Figure 1A and Figure 1B The reflective layer 530 discussed herein is made of the same material. Multiple first pixel openings 691 may be provided spaced apart from each other. The first mask layer 910 can be removed.

[0095] Reference Figure 1A and Figure 5B A first fluorescent material can be deposited in the first pixel opening 691 and on the support substrate 501, resulting in the formation of a first initial fluorescent layer 610P. The first initial fluorescent layer 610P can fill the first pixel opening 691 and cover the top surface of the support substrate 501.

[0096] Reference Figure 1A and Figure 5C The upper portion of the first initial phosphor layer 610P can be removed to form a plurality of first phosphor layers 610. A polishing process can be performed to remove the first initial phosphor layer 610P. The polishing process can continue until the support substrate 501 is exposed. Therefore, the first phosphor layers 610 can be separated from each other. Each of the first phosphor layers 610 can be locally disposed in a corresponding first pixel opening 691.

[0097] The polishing process can make each of the first phosphor layers 610 have a top surface that is coplanar with the top surface of the support substrate 501. The top surface of each of the first phosphor layers 610 can be substantially flat. For example, the top surface 610a at the central portion of each first phosphor layer 610 can be located at substantially the same level as the top surface 610b at the edge portion of each first phosphor layer 610.

[0098] Reference Figure 1A and Figure 5D A portion of the support substrate 501 can be removed to form the second pixel opening 692 and the first isolator 510. A second mask layer 920 can be formed to cover the first phosphor layer 610. The second pixel opening 692 can be formed by using the second mask layer 920 as an etching mask to etch the support substrate 501. The first isolator 510 can be the portion of the support substrate 501 disposed between the pixel openings 691 and 692, and can define the pixel openings 691 and 692.

[0099] The second reflective layer 532 can be formed in the second pixel opening 692 and can cover the sidewalls of the second pixel opening 692. The second reflective layer 532 can expose the top surface of the second semiconductor layer 320. Figure 1A The reflective layer 530 discussed in 1B may include: such as Figure 5A The example shows the formation of the first reflective layer 531 and such Figure 5D The example shows the formation of a second reflective layer 532. The second mask layer 920 can be removed.

[0100] Reference Figure 1A and Figure 5E A second fluorescent material can be deposited in the second pixel opening 692 and on the support substrate 501, resulting in the formation of a second initial fluorescent layer 620P. The second initial fluorescent layer 620P can fill the second pixel opening 692 and cover the top surface of the support substrate 501. Although not shown, multiple second pixel openings 692 can be provided spaced apart from each other. In some example embodiments, the second initial fluorescent layer 620P can fill all of the multiple second pixel openings 692. An example with a single second pixel opening 692 will be described below.

[0101] Reference Figure 1A and Figure 5FThe upper portion of the second initial phosphor layer 620P can be removed to form the second phosphor layer 620. A polishing process can be performed to remove the second initial phosphor layer 620P. The polishing process can continue until the support substrate 501 is exposed. Although not shown, multiple second phosphor layers 620 can be formed, and each of the multiple second phosphor layers 620 can be partially disposed in a corresponding second pixel opening 692. The polishing process can give the second phosphor layer 620 a flat top surface. The top surface of the second phosphor layer 620 can be coplanar with the top surface of the support substrate 501.

[0102] Reference Figure 1A and Figure 1B The support substrate 501 can be etched to form the second isolation member 520. The second isolation member 520 can expose the first connection pad 461 and the second connection pad 462. Through the above process, a final product can be manufactured. Figure 1A and Figure 1B The light-emitting devices discussed in 2000.

[0103] Figures 6A to 6C A cross-sectional view illustrating a method for manufacturing a light-emitting device according to some example embodiments is shown. In the description... Figures 6A to 6C The time will also refer to Figure 2A .

[0104] Reference Figure 2A and Figure 6A A first fluorescent layer 610 can be formed on the first pixel PX1, and a second fluorescent layer 620 can be formed on the second pixel PX2. The formation of the first fluorescent layer 610 and the second fluorescent layer 620 can be related to the above... Figure 5A and Figure 5F The basic structure is the same as that discussed in the previous section. Before forming the first phosphor layer 610 and the second phosphor layer 620, an LED chip 300, a dielectric layer 205, electrode patterns 410 and 420, line patterns 451 and 452, a bonding pad 460 and a pixel isolation pattern 200 can be formed on the support substrate 501, and the substrate 100 can be adhered to the pixel isolation pattern 200.

[0105] A third mask layer 930 can be formed on the support substrate 501, the first phosphor layer 610, and the second phosphor layer 620, and can expose the top surface of the support substrate 501. An etching process using the third mask layer 930 as an etching mask can be performed to etch the support substrate 501 to form a third pixel opening 693 and a first isolator 510. A third pixel opening 693 can be formed on the third pixel PX3. The third pixel opening 693 can be spaced apart from the first pixel opening 691 and the second pixel opening 692, and can expose the second semiconductor layer 320. A third reflective layer 533 can be formed in the third pixel opening 693 and can cover the sidewalls of the third pixel opening 693. The third reflective layer 533 can expose the top surface of the second semiconductor layer 320. Figure 2A and Figure 2B The reflective layer 530 discussed herein may include a first reflective layer 531, a second reflective layer 532, and a third reflective layer 533. Although not shown, the third pixel opening 693 may be formed in multiple ways. The third mask layer 930 may be removed.

[0106] Reference Figure 2A and Figure 6B A third fluorescent material can be disposed in the third pixel opening 693 and on the support substrate 501, resulting in the formation of a third initial fluorescent layer 630P. The third initial fluorescent layer 630P can fill the third pixel opening 693 and cover the top surface of the support substrate 501.

[0107] Reference Figure 2A and Figure 6C The upper portion of the third initial phosphor layer 630P can be removed to form the third phosphor layer 630. A polishing process can be performed to remove the third initial phosphor layer 630P. The polishing process can continue until the top surface of the support substrate 501 is exposed. Although not shown, multiple third phosphor layers 630 can be formed, and each of the multiple third phosphor layers 630 can be partially disposed in a corresponding third pixel opening 693. The polishing process can make the top surface of the third phosphor layer 630 coplanar with the top surface of the support substrate 501. The third phosphor layer 630 can have a flat top surface.

[0108] Reference Figure 2B The support substrate 501 can be etched to form the second spacer 520. Through the above process, a final product can be manufactured. Figure 2A and Figure 2B The light-emitting device 2000A discussed in the article.

[0109] The following describes a light-emitting module and a method of manufacturing the same, based on some example embodiments.

[0110] Return to reference Figure 1A , Figure 1B , Figure 2A and Figure 2B The light-emitting device 2000 can be disposed on the module substrate 1000. The light-emitting device 2000 can be as follows: Figures 5A to 5F The example is manufactured as shown. Bonding lines 800 can be formed on corresponding connection pads 460. Bonding lines 800 can be correspondingly coupled to connection pads 460 and substrate pads 1100. Therefore, the light-emitting device 2000 can be electrically connected to the module substrate 1000. On the module substrate 1000, the light guide structure 3000 can be spaced apart from the light-emitting device 2000. As a result, it can be manufactured as shown in the example. Figure 1A and Figure 1B The final light-emitting module 1 is shown. For example, it can be manufactured using... Figures 3A to 3I The example shown is used to manufacture the light-emitting module 1 by forming the light-emitting device 2001.

[0111] like Figure 2A and Figure 2B As shown, it can be used as follows Figures 6A to 6C The example shows a light-emitting device 2000A formed to manufacture a light-emitting module 1A. For example, a light-emitting module 1A can be manufactured using a light-emitting device 2000A formed as shown in the example. Figure 4A and Figure 4B The example shows the formation of a light-emitting device 2001A to manufacture a light-emitting module 1A.

[0112] Figure 7 It shows along Figure 1A The cross-sectional view taken by line AB shows the light-emitting module according to some example embodiments.

[0113] Reference Figure 7 The light-emitting module 1B may include a module substrate 1000, a light-emitting device 2000, a light-guiding structure 3000, and / or a heat-radiating structure 1300. The heat-radiating structure 1300 may be disposed on the bottom surface of the module substrate 1000. The heat-radiating structure 1300 may have high thermal conductivity. The heat-radiating structure 1300 may include a metallic material such as aluminum or copper, but the inventive concept is not limited thereto. When the light-emitting module 1B is operating, the heat generated from the light-emitting device 2000 can be rapidly dissipated to the outside through the module substrate 1000 and the heat-radiating structure 1300. Therefore, the light-emitting module 1B can improve thermal characteristics and operational reliability.

[0114] The arrangement of the heat radiation structure 1300 can be varied. For example, the heat radiation structure 1300 can be disposed on the side surface of the module substrate 1000. Or, for example, the heat radiation structure 1300 can cover both the side and bottom surfaces of the module substrate 1000.

[0115] Figure 8A A plan view illustrating a light-emitting module according to some example embodiments is shown. Figure 8B It shows along Figure 8AA sectional view taken from line A”-B”.

[0116] Reference Figure 8A and Figure 8B The light-emitting module 1C may include a cover 4000, a module substrate 1000, a light-emitting device 2000, and / or a light guide structure 3001. For example, the cover 4000 may be a housing or a printed circuit board. The module substrate 1000, on which the light-emitting device 2000 is mounted, may be disposed on the cover 4000 such that the bottom surface of the module substrate 1000 faces the cover 4000. The module substrate 1000 and the light-emitting device 2000 may be connected to the cover 4000. Figure 1A and Figure 1B The basic principles discussed are the same. For example, Figure 2A and Figure 2B The light-emitting device 2000A discussed in the paper can be mounted on the module substrate 1000.

[0117] A light guide structure 3001 can be disposed on a cover 4000. The light guide structure 3001 can be spaced apart from and cover the light-emitting device 2000. The light guide structure 3001 can define a space for the light-emitting device 2000. An air layer or resin layer (not shown) can be disposed between the light guide structure 3001 and the light-emitting device 2000. The light guide structure 3001 can have a hemispherical shape. For example, the light guide structure 3001 can have a hemispherical outer surface and a hemispherical inner surface 3001i. The light guide structure 3001 can have an inner diameter A1' that is the same as or larger than the maximum diameter A2' of the pixel array. The inner diameter A1' of the light guide structure 3001 can represent the maximum diameter at the hemispherical inner surface 3001i of the light guide structure 3001. The light guide structure 3001 can include elements related to the above-mentioned... Figures 1A to 1D The optical guide structure 3000 discussed herein is made of the same material. The optical guide structure 3001 can be reversibly attached to or detached from the cover 4000.

[0118] Light emitted from the light-emitting device 2000 can be emitted outward through the light guide structure 3001. The light guide structure 3001 can improve the luminous efficiency of the light-emitting module 1C. The light guide structure 3001 can control the illuminance of the light emitted from the light-emitting device 2000.

[0119] For example, Figure 7 The heat radiation structure 1300 discussed herein can also be disposed on the bottom surface or side surface of the module substrate 1000. In some example embodiments, the heat radiation structure 1300 can be disposed on the top surface of the cover 4000.

[0120] Figure 9 A cross-sectional view of a light-emitting module according to some example embodiments is shown.

[0121] Reference Figure 9 The light-emitting module 1D may include a cover 4000, a module substrate 1000, a light-emitting device 2000, a light guide structure 3000, and / or an external structure 5000. The external structure 5000 may be a housing. The upper part of the light guide structure 3000 may be joined and rigidly coupled to the external structure 5000. The cover 4000 may be substantially the same as discussed in Figure 8. The module substrate 1000, the light guide structure 3000, and the light-emitting device 2000 may be connected to the upper part of the cover 4000. Figure 1A and Figure 1B The basic concepts discussed in the text are the same.

[0122] exist Figure 7 , Figure 8A , Figure 8B and Figure 9 In the description, the light-emitting device 2000 can be as follows: Figures 5A to 5F As shown in the example, it can be manufactured in this way. For example, light-emitting modules 1B, 1C, or 1D can be manufactured using the following light-emitting devices: such as... Figures 3A to 3I Light-emitting devices manufactured as discussed in the examples 2001, such as Figure 4A and Figure 4B The light-emitting device 2001A is manufactured as discussed in the examples, or as... Figures 6A to 6C The light-emitting device 2000A is manufactured as discussed in the example.

[0123] Figure 10 A perspective view of an automotive lighting device according to some example embodiments is shown.

[0124] Reference Figure 10 The vehicle 10 may include one or more of a headlight module 2020, a mirror lamp module 2040, a taillight module 2060, and an interior lamp module. The headlight module 2020 may be installed in a headlight assembly 2010. The mirror lamp module 2040 may be installed in an exterior side mirror assembly 2030. The taillight module 2060 may be installed in a taillight assembly 2050. The interior lamp module may be disposed within the vehicle 10. One or more of the headlight module 2020, mirror lamp module 2040, taillight module 2060, and interior lamp module may be implemented using one of the light-emitting modules 1, 1A, 1B, 1C, and 1D discussed above. For example, light-emitting modules 1, 1A, 1B, 1C, and 1D may be used as automotive lighting devices.

[0125] According to the present invention, the light-emitting device can produce at least two colors. A single light-emitting chip can be used as the light-emitting device, thus the light-emitting module can have a small size and weight. Reducing the size of the light-emitting module increases the design freedom of the light-emitting device including the module. The light-emitting module can reduce power consumption. A light guide structure can be provided to improve luminous efficiency.

[0126] This detailed description of the inventive concept should not be construed as limiting it to the embodiments set forth herein, and the inventive concept is intended to cover various combinations, modifications, and variations of the invention without departing from its spirit and scope. The appended claims should be construed as including other embodiments.

Claims

1. A light-emitting module, comprising: Module baseboard; A light-emitting device, located on the module substrate; A light guide structure, spaced apart from the module substrate and surrounding the light-emitting device in a plan view, and Multiple bonding lines are located on the edge region of the light-emitting device and coupled to the connection pads of the light-emitting device and the substrate pads of the module substrate. The light-emitting device includes: substrate; A pixel array located on the substrate, the pixel array including a first pixel and a second pixel, the first pixel and the second pixel each including a light-emitting diode chip, the light-emitting diode chip being configured to emit light with a wavelength in the blue or ultraviolet range; A pixel isolation pattern, wherein the pixel isolation pattern is disposed in the gap between the substrate and the bottom surface of the light-emitting diode chip, the pixel isolation pattern comprising a buried dielectric layer and a pad layer; and A wavelength conversion material is located on the top surface of at least one of the first pixel and the second pixel. Wherein, the pixel array has a maximum diameter in a first direction, and the diameter of the bottom surface of the light guide structure facing the light-emitting device in the first direction is greater than or equal to the maximum diameter of the pixel array, and less than the width of the substrate in the first direction. The top surface of the connecting pad is at the same level as the top surface of the light-emitting diode chip. The light-emitting module also includes an electrode pattern electrically connected to the light-emitting diode chip, the electrode pattern being coupled to the connection pad via a line pattern extending between the buried dielectric layer and the pad layer.

2. The light-emitting module according to claim 1, wherein, An air layer exists between the light guide structure and the light-emitting device.

3. The light-emitting module according to claim 2, wherein, The thickness of the air layer is in the range of 0.1 mm to 5 mm.

4. The light-emitting module according to claim 1, in, The wavelength of light emitted by the LED chip of the first pixel is the same as the wavelength of light emitted by the LED chip of the second pixel.

5. The light-emitting module according to claim 4, further comprising: Multiple fluorescent layers are correspondingly disposed on the first pixel and the second pixel, and each of the multiple fluorescent layers includes the wavelength conversion material; as well as Multiple isolation wall structures are located on the pixel isolation pattern and surround the fluorescent layer in the planar view. The isolation wall structure includes a silicon substrate.

6. The light-emitting module according to claim 1, wherein, The pixel array region includes a first separator between the first pixel and the second pixel.

7. The light-emitting module according to claim 1, wherein, A resin layer exists between the light guide structure and the light-emitting device.

8. The light-emitting module according to claim 1, wherein, The wavelength conversion material includes quantum dot fluorescent materials with nano-sized particles.

9. The light-emitting module according to claim 1, wherein, The optical waveguide structure has a slender cylindrical waveguide.

10. A light-emitting module, comprising: Module baseboard; A light-emitting device, located on the module substrate; A light guide structure, spaced apart from the module substrate and guiding light emitted from the light-emitting device, and Multiple bonding lines are located on the edge region of the light-emitting device and coupled to the connection pads of the light-emitting device and the substrate pads of the module substrate. The light-emitting device includes: substrate; A pixel array located on the substrate, the pixel array including a first pixel and a second pixel, the first pixel and the second pixel each including a light-emitting diode chip, the light-emitting diode chip emitting light in the blue or ultraviolet range; A pixel isolation pattern, wherein the pixel isolation pattern is disposed in the gap between the substrate and the bottom surface of the light-emitting diode chip, the pixel isolation pattern comprising a buried dielectric layer and a pad layer; and A wavelength conversion material is located on the top surface of at least one of the first pixel and the second pixel. Wherein, the pixel array has a maximum diameter in a first direction, and the diameter of the bottom surface of the light guide structure facing the light-emitting device in the first direction is greater than or equal to the maximum diameter of the pixel array, and less than the width of the substrate in the first direction. The top surface of the connecting pad is at the same level as the top surface of the light-emitting diode chip. The light-emitting module also includes an electrode pattern electrically connected to the light-emitting diode chip, the electrode pattern being coupled to the connection pad via a line pattern extending between the buried dielectric layer and the pad layer.

11. The light-emitting module according to claim 10, wherein, An air layer exists between the light guide structure and the light-emitting device.

12. The light-emitting module according to claim 11, wherein, The thickness of the air layer is in the range of 0.1 mm to 5 mm.

13. The light-emitting module according to claim 10, wherein, The tolerance range of the peak wavelength of the light emitted from each LED chip of the first pixel and the second pixel is equal to or less than about 5% of the average peak wavelength of the light emitted from the LED chips of the first pixel and the second pixel.

14. The light-emitting module according to claim 13, further comprising: A fluorescent layer, located on the light-emitting diode chip, includes the wavelength conversion material; as well as The spacer, when viewed in a plan view, surrounds the fluorescent layer. The isolation element includes a silicon substrate.

15. An automotive lighting device, comprising: Module baseboard; A light-emitting device, located on the module substrate; as well as A light guide structure, spaced apart from the module substrate and guiding light emitted from the light-emitting device, and Multiple bonding lines are located on the edge region of the light-emitting device and coupled to the connection pads of the light-emitting device and the substrate pads of the module substrate. The light-emitting device includes: substrate; A pixel array located on the substrate, the pixel array including a first pixel and a second pixel, the first pixel and the second pixel each including a light-emitting diode chip, the light-emitting diode chip being configured to emit light with a wavelength in the blue or ultraviolet range; A pixel isolation pattern, wherein the pixel isolation pattern is disposed in the gap between the substrate and the bottom surface of the light-emitting diode chip, the pixel isolation pattern comprising a buried dielectric layer and a pad layer; and A wavelength conversion material is located on the top surface of at least one of the first pixel and the second pixel. Wherein, the pixel array has a maximum diameter in a first direction, and the diameter of the bottom surface of the light guide structure facing the light-emitting device in the first direction is greater than or equal to the maximum diameter of the pixel array, and less than the width of the substrate in the first direction. The top surface of the connecting pad is at the same level as the top surface of the light-emitting diode chip. The automotive lighting device also includes an electrode pattern electrically connected to the light-emitting diode chip, the electrode pattern being coupled to the connection pad via a line pattern extending between the buried dielectric layer and the pad layer.

16. The automotive lighting device according to claim 15, wherein, An air layer exists between the light guide structure and the light-emitting device.

17. The automotive lighting device according to claim 16, wherein, The thickness of the air layer is in the range of 0.1 mm to 5 mm.

18. The automotive lighting device according to claim 15, wherein, The tolerance range of the peak wavelength of the light emitted from each LED chip of the first pixel and the second pixel is equal to or less than about 5% of the average peak wavelength of the light emitted from the LED chips of the first pixel and the second pixel.

19. The automotive lighting device according to claim 15, further comprising: A fluorescent layer, located on the light-emitting diode chip, includes the wavelength conversion material; as well as The spacer, when viewed in a plan view, surrounds the fluorescent layer. The isolation element includes a silicon substrate.

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