Heat treatment method and heat treatment device

Abstract

The present invention provides a heat treatment method and a heat treatment device capable of confirming the film type and film thickness of a thin film formed on the surface of a substrate. A plurality of theoretical reflectivities obtained by simulation for a silicon substrate formed with a thin film of a plurality of film types and film thicknesses are pre-registered in a database in association with the film type and film thickness. A carrier containing a plurality of semiconductor wafers constituting a batch is moved into the heat treatment device. The surface of the semiconductor wafer is irradiated with light to measure the reflectivity. The theoretical reflectivity of the semiconductor wafer is calculated based on the obtained measured reflectivity. The theoretical reflectivity that is close to the theoretical reflectivity of the semiconductor wafer is extracted from the plurality of theoretical reflectivities registered in the database, and the film type and film thickness of the thin film formed on the surface of the semiconductor wafer are determined. Based on the determined film type and film thickness of the thin film, the processing conditions of the semiconductor wafer are determined.

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