Organic light emitting display device and method for manufacturing organic light emitting display device

Abstract

The present invention provides an organic light-emitting display device and a method for manufacturing the organic light-emitting display device. The organic light-emitting display device may include: a substrate, including an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area, and having an opening formed in the opening area; an insulating layer structure, arranged in the display area and the peripheral area on the substrate; a light-emitting layer, arranged on the insulating layer structure in the display area, extending along a first direction as a direction from the display area to the peripheral area, and having a first opening in the peripheral area; and an optical module, arranged in the opening. Accordingly, the organic light-emitting display device can easily block water, moisture, etc. from penetrating from the peripheral area to the semiconductor elements and structures in the display area.

Description

Technical Field

[0001] The present invention relates to an organic light emitting display device and a method for manufacturing the organic light emitting display device. More specifically, the present invention relates to an organic light emitting display device including an optical module disposed in a portion of a display area and a method for manufacturing the organic light emitting display device including an optical module disposed in a portion of a display area. Background Art

[0002] Flat panel display devices are being used as display devices replacing cathode ray tube display devices due to their lightness, thinness, etc. Representative examples of such flat panel display devices are liquid crystal display devices and organic light emitting display devices.

[0003] The organic light-emitting display device may include a display area for displaying an image and a non-display area where a gate driving unit, a data driving unit, wiring, an optical module (for example, a camera module, an operation sensing sensor, etc.) and the like are arranged. Recently, an organic light-emitting display device is being developed in which an opening is formed in a portion of the display area and an optical module is arranged in the opening. In addition, a blocking pattern may be formed on the outer contour of the portion where the optical module is arranged to block water, moisture, etc. that may penetrate into the optical module and the adjacent display area. However, there is a problem that the blocking pattern is easily damaged due to external impact or pressure during the manufacturing process. If the blocking pattern is damaged, defects in the pixels included in the organic light-emitting display device may occur. Summary of the invention

[0004] An object of the present invention is to provide an organic light emitting display device including an optical module disposed in a portion of a display area.

[0005] Another object of the present invention is to provide a method for manufacturing an organic light emitting display device including an optical module disposed in a portion of a display area.

[0006] However, the present invention is not limited to the above-mentioned objects, and various expansions can be made without departing from the spirit and scope of the present invention.

[0007] In order to achieve the aforementioned purpose of the present invention, an organic light-emitting display device according to an exemplary embodiment of the present invention may include: a substrate, including an opening area, a surrounding area surrounding the opening area, and a display area surrounding the surrounding area, and having an opening formed in the opening area; an insulating layer structure, arranged in the display area and the surrounding area on the substrate; a light-emitting layer, arranged on the insulating layer structure in the display area, extending along a first direction which is a direction from the display area to the surrounding area, and having a first opening in the surrounding area; and an optical module, arranged in the opening.

[0008] In exemplary embodiments, the insulating layer structure may include a first groove formed in the peripheral area.

[0009] In an exemplary embodiment, a portion of the light emitting layer may be disposed within the first groove, and the first opening may be located inside the first groove.

[0010] In an exemplary embodiment, the insulating layer structure may include: a gate insulating layer disposed on the substrate and having an opening in the peripheral region; and an interlayer insulating layer disposed on the gate insulating layer and having an opening in the peripheral region overlapping with the opening of the gate insulating layer.

[0011] In an exemplary embodiment, the insulating layer structure may further include a buffer layer interposed between the substrate and the gate insulating layer, and the opening of the gate insulating layer and the opening of the interlayer insulating layer are defined as the first groove of the insulating layer structure.

[0012] In an exemplary embodiment, it may also include: a first inorganic thin film encapsulation layer, which is arranged on the light-emitting layer and overlaps with the light-emitting layer, fills the first opening, and covers the light-emitting layer in the surrounding area; and a second inorganic thin film encapsulation layer, which is arranged on the first inorganic thin film encapsulation layer and overlaps with the first inorganic thin film encapsulation layer, and covers the first inorganic thin film encapsulation layer in the surrounding area, and the first inorganic thin film encapsulation layer can contact the buffer layer through the first opening.

[0013] In an exemplary embodiment, an upper electrode may be included and arranged on the light emitting layer to overlap with the light emitting layer.

[0014] In exemplary embodiments, the upper electrode may have a second opening overlapping the first opening.

[0015] In an exemplary embodiment, a cover layer may be further included, which is arranged to overlap on the upper electrode and has a third opening overlapping with the first opening and the second opening.

[0016] In an exemplary embodiment, it may also include: a covering layer, which is arranged on the upper electrode and overlaps with the upper electrode, and covers the two side surfaces of the light-emitting layer defining the first opening and the two side surfaces of the upper electrode defining the second opening, and has a third opening on the inner side of the first opening and the second opening.

[0017] In exemplary embodiments, the upper electrode may fill the first opening and may cover the light emitting layer in the surrounding area.

[0018] In an exemplary embodiment, the substrate may further include: a second groove formed in the peripheral area around the first groove.

[0019] In an exemplary embodiment, the light emitting layer may further include: an opening formed in the second groove.

[0020] In order to achieve the aforementioned purpose of the present invention, a manufacturing method of an organic light-emitting display device according to an exemplary embodiment of the present invention may include the following steps: providing a substrate including an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area; forming an insulating layer structure in the display area and the peripheral area on the substrate; removing at least a portion of the insulating layer structure located in the peripheral area to form a groove; forming a light-emitting layer inside the groove; making a first patterned component contact with a portion of the light-emitting layer formed in the groove; removing a portion of the light-emitting layer formed in the groove by separating the first patterned component from the light-emitting layer, thereby forming a first opening of the light-emitting layer; continuously forming a first inorganic thin film encapsulation layer on the light-emitting layer in a manner that fills the first opening of the light-emitting layer; and forming an opening in the opening area of ​​the substrate.

[0021] In an exemplary embodiment, after the step of forming the first opening of the light-emitting layer, the following steps may also be included: forming an upper electrode on the light-emitting layer overlapping the light-emitting layer; and forming a second opening on the upper electrode overlapping the first opening of the light-emitting layer.

[0022] In an exemplary embodiment, after the step of forming a second opening on the upper electrode, the following steps may also be included: overlappingly forming a covering layer on the upper electrode; making a second patterned component having a width smaller than a width of the first patterned component contact a portion of the covering layer formed with the first opening and the second opening; and removing a portion of the covering layer formed at the first opening and the second opening by separating the second patterned component from the covering layer, thereby forming a third opening in the covering layer.

[0023] In an exemplary embodiment, the cover layer may cover both sides of the light emitting layer defining the first opening and both sides of the upper electrode defining the second opening, and the first inorganic thin film encapsulation layer may fill the third opening of the cover layer.

[0024] In an exemplary embodiment, a width of the third opening may be smaller than a width of each of the first opening and the second opening.

[0025] In an exemplary embodiment, after the step of forming the opening in the opening area, the following step may be further included: forming an optical module in the opening.

[0026] In an exemplary embodiment, the insulating layer structure may include: a buffer layer formed on the substrate; a gate insulating layer formed on the buffer layer and having an opening in the surrounding area; and an interlayer insulating layer formed on the gate insulating layer and having an opening in the surrounding area that overlaps with the opening of the gate insulating layer.

[0027] According to an exemplary embodiment of the present invention, the organic light-emitting display device can include a light-emitting layer having the first opening, an upper electrode having the second opening, and a covering layer having the third opening inside the groove, so that the light-emitting layer, the upper electrode, and the covering layer are disconnected and short-circuited in the groove by means of the first opening, the second opening, and the third opening. In other words, the upper electrode and the covering layer can be disconnected and short-circuited in the groove without the opening of the undercut shape of the lower expansion. In addition, since the opening of the undercut shape of the lower expansion is not formed, the residue of the photoresist used to pattern the metal layer can be easily removed from the groove. That is, the first thin film encapsulation layer and the third thin film encapsulation layer can be easily arranged inside the groove of the surrounding area. Accordingly, the organic light-emitting display device can easily block water, moisture, etc. from penetrating from the surrounding area to the semiconductor elements and light-emitting structures in the display area.

[0028] In the method for manufacturing an organic light-emitting display device according to an exemplary embodiment of the present invention, a light-emitting layer having a first opening, an upper electrode having a second opening, and a covering layer having a third opening can be formed by using a first patterned component and a second patterned component. Accordingly, the light-emitting layer, the upper electrode, and the covering layer can be disconnected in the groove by the first opening, the second opening, and the third opening without having an opening in the shape of an undercut with a lower expansion, and the organic light-emitting display device can easily block water, moisture, etc. from penetrating from the surrounding area to the semiconductor element and the light-emitting structure in the display area.

[0029] However, the effects of the present invention are not limited to the above-mentioned effects, and various expansions can be made within the scope not departing from the idea and field of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a perspective view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

[0031] Figure 2 It is shown Figure 1 A plan view of an organic light emitting display device.

[0032] Figure 3and Figure 4 It is used to describe the Figure 1 A three-dimensional view of an opening of an organic light emitting display device.

[0033] Figure 5 It is enlarged to show Figure 2 A partially enlarged plan view of the “A” region of an organic light-emitting display device.

[0034] Figure 6 Yes Figure 5 A cross-sectional view of an organic light emitting display device taken along line II'.

[0035] Figures 7 to 20 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.

[0036] Fig.21 is a cross-sectional view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

[0037] Fig. 22 is a cross-sectional view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

[0038] Fig.23 is a cross-sectional view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

[0039] Fig.24 is a cross-sectional view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

[0040] Explanation of symbols:

[0041] 10: Display area 20: Opening area

[0042] 30: Surrounding area

[0043] 100, 500, 800, 1000, 1100: Organic light-emitting display device

[0044] 105: Glass substrate 110: Substrate

[0045] 111: first organic layer 112: first barrier layer

[0046] 113: second organic layer 114: second barrier layer

[0047] 115: buffer layer 130: active layer

[0048] 150: Gate insulating layer 170: Gate electrode

[0049] 190: interlayer insulating layer 200: light emitting structure

[0050] 210: Source electrode 230: Drain electrode

[0051] 250: semiconductor element 270: planarization layer

[0052] 290: Lower electrode 300: Insulating layer structure

[0053] 310: Pixel defining film 330: Light emitting layer

[0054] 330a: light emitting layer pattern 345a: covering layer pattern

[0055] 340, 342: upper electrode 345: cover layer

[0056] 450: thin film encapsulation structure 451: first thin film encapsulation layer

[0057] 452: second thin film encapsulation layer 453: third thin film encapsulation layer

[0058] 700: Optical module 900: First patterned component

[0059] 910: opening 950: second patterned component

[0060] 930: groove, first groove 935: second groove DETAILED DESCRIPTION

[0061] Hereinafter, an organic light emitting display device and a method for manufacturing the organic light emitting display device according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the accompanying drawings, the same or similar reference numerals are used for the same or similar components.

[0062] Figure 1 is a perspective view showing an organic light emitting display device according to an exemplary embodiment of the present invention, Figure 2 It is shown Figure 1 A plan view of an organic light emitting display device, Figure 3 and Figure 4 It is used to illustrate the formation of Figure 1 A three-dimensional view of an opening of an organic light emitting display device.

[0063] Reference Figure 1 , Figure 2 , Figure 3 as well as Figure 4 The organic light-emitting display device 100 may include an optical module 700 and the like. The organic light-emitting display device 100 may have a first surface S1 for displaying an image and a second surface S2 opposite to the first surface S1. The optical module 700 may be disposed on one side of the organic light-emitting display device 100.

[0064] like Figure 2As shown, the organic light emitting display device 100 may include a display area 10, an opening area 20, and a surrounding area 30. Here, the surrounding area 30 may substantially surround the opening area 20, and the display area 10 may substantially surround the surrounding area 30. Optionally, the display area 10 may not completely surround the surrounding area 30. Figure 3 and Figure 4 As shown, the organic light-emitting display device 100 may include an opening 910 formed in the opening region 20. In other exemplary embodiments, the organic light-emitting display device 100 may further include a bending region and a plate region located on one side of the organic light-emitting display device 100. For example, the bending region may be bent with a first direction D1 parallel to the top of the organic light-emitting display device 100 as an axis, and the plate region may also be located on the bottom surface of the organic light-emitting display device 100.

[0065] Refer again Figure 1 , Figure 2 , Figure 3 as well as Figure 4 The display area 10 may include a plurality of sub-pixel areas (not shown). The plurality of sub-pixel areas may be arranged in a matrix form in the display area 10 as a whole. A sub-pixel circuit (e.g., Figure 6 A semiconductor element 250) may be arranged on the sub-pixel circuit with an organic light emitting diode (eg, Figure 6 An image can be displayed in the display area 10 through the sub-pixel circuit and the organic light emitting diode.

[0066] For example, the sub-pixel region may be provided with a first sub-pixel circuit, a second sub-pixel circuit, and a third sub-pixel circuit, and the first organic light-emitting diode, the second organic light-emitting diode, and the third organic light-emitting diode may be provided on the first to third sub-pixel circuits. The first sub-pixel circuit may be connected to a first organic light-emitting diode capable of emitting red light, the second sub-pixel circuit may be connected to a second organic light-emitting diode capable of emitting green light, and the third sub-pixel circuit may be connected to a third organic light-emitting diode capable of emitting blue light.

[0067] In an exemplary embodiment, the first organic light emitting diode may be arranged to overlap with the first sub-pixel circuit, the second organic light emitting diode may be arranged to overlap with the second sub-pixel circuit, and the third organic light emitting diode may be arranged to overlap with the third sub-pixel circuit. Selectively, the first organic light emitting diode may also be arranged to overlap with a portion of the first sub-pixel circuit and a portion of a sub-pixel circuit different from the first sub-pixel circuit, the second organic light emitting diode may also be arranged to overlap with a portion of the second sub-pixel circuit and a portion of a sub-pixel circuit different from the second sub-pixel circuit, and the third organic light emitting diode may also be arranged to overlap with a portion of the third sub-pixel circuit and a portion of a sub-pixel circuit different from the third sub-pixel circuit.

[0068] In other words, the first to third organic light emitting diodes may be arranged in the following manners: an RGB stripe method in which rectangles of the same size are arranged in sequence; an S-stripe method including blue organic light emitting diodes having a relatively large area; a WRGB method including white organic light emitting diodes; a PenTile method in which rectangles are arranged in a RG-GB repetitive form, etc.

[0069] Also, at least one driving transistor, at least one switching transistor, at least one capacitor, etc. may be disposed in each of the plurality of sub-pixel regions.

[0070] However, although the display area 10 of the present invention is described as having a quadrilateral plane shape, the shape is not limited thereto. For example, the display area 10 may also have a triangular plane shape, a rhombus plane shape, a polygonal plane shape, a circular plane shape, a track-shaped plane shape, or an elliptical plane shape.

[0071] The optical module 700 may be arranged in the opening 910. For example, the optical module 700 may include the following modules: a camera module capable of capturing (or recognizing) an image of an object; a face recognition sensor module for sensing a user's face; a pupil recognition sensor module for sensing a user's pupil; an acceleration sensor module and a geomagnetic field sensor module for determining the movement of the organic light-emitting display device 100; a proximity sensor module and an infrared sensor module for sensing whether the organic light-emitting display device 100 is close to the front, and an illumination sensor module for measuring the brightness when placed in a pocket or bag. In other exemplary embodiments, a vibration module for indicating a reminder of receiving a message, a speaker module for outputting sound, and other functional modules may also be arranged in the opening 910.

[0072] However, although the opening area 20 and the surrounding area 30 of the present invention are described as respectively having circular planar shapes, the shapes are not limited thereto. For example, the shape of each of the opening area 20 and the surrounding area 30 may also have a triangular planar shape, a rhombus planar shape, a polygonal planar shape, a quadrilateral planar shape, a track-shaped planar shape, or an elliptical planar shape.

[0073] Figure 5 It is enlarged to show Figure 2 A partial enlarged plan view of the "A" region of the organic light emitting display device, Figure 6 Yes Figure 5 A cross-sectional view of an organic light emitting display device taken along line II'.

[0074] Reference Figure 5 and Figure 6 , the organic light-emitting display device 100 may include a substrate 110, an insulating layer structure 300, a semiconductor element 250, a planarization layer 270, a light-emitting structure 200, a pixel defining film 310, a cover layer 345, a thin film encapsulation structure 450, an optical module 700, etc. Here, the substrate 110 may include a first organic layer 111, a first barrier layer 112, a second organic layer 113, and a second barrier layer 114. Since the organic light-emitting display device 100 has a display area 10, an opening area 20, and a surrounding area 30, the substrate 110 may also be divided into a display area 10, an opening area 20, and a surrounding area 30. The insulating layer structure 300 may include a buffer layer 115, a gate insulating layer 150, and an interlayer insulating layer 190, and the semiconductor element 250 may include an active layer 130, a gate electrode 170, a source electrode 210, and a drain electrode 230. Furthermore, the light emitting structure 200 may include a lower electrode 290 , a light emitting layer 330 and an upper electrode 340 , and the thin film encapsulation structure 450 may include a first thin film encapsulation layer 451 , a second thin film encapsulation layer 452 and a third thin film encapsulation layer 453 .

[0075] In an exemplary embodiment, the insulating layer structure 300 may further include a groove 930 formed in the peripheral region 30, and the light emitting layer 330, the upper electrode 340, and the covering layer 345 may be separated from each other inside the groove 930. In other words, each of the light emitting layer 330, the upper electrode 340, and the covering layer 345 may have an opening inside the groove 930. Accordingly, the organic light emitting display device 100 may include the light emitting layer 330, the upper electrode 340, and the covering layer 345 each having an opening inside the groove 930, thereby blocking water, moisture, etc. from penetrating into the semiconductor element 250 and the light emitting structure 200.

[0076] A first organic layer 111 may be provided. The first organic layer 111 may include an organic substance having flexibility. For example, the first organic layer 111 may include a random copolymer or a block copolymer. Also, the first organic layer 111 may have high transparency, low coefficient of thermal expansion, and high glass transition temperature. Since the first organic layer 111 contains an imide group, it may have excellent heat resistance, chemical resistance, wear resistance, and electrical properties. In an exemplary embodiment, the first organic layer 111 may include polyimide.

[0077] The first barrier layer 112 may be integrally disposed on the first organic layer 111. The first barrier layer 112 may block moisture that penetrates through the first organic layer 111. The first barrier layer 112 may include an inorganic substance having flexibility. In an exemplary embodiment, the first barrier layer 112 may include silicon oxide or silicon nitride, etc. For example, the first barrier layer 112 may include silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), silicon carbide oxide (SiO x C y ), Silicon Carbon Nitride (SiC x N y ), aluminum nitride (AlN x ), tantalum oxide (TaO x ), hafnium oxide (HfO x ), zirconium oxide (ZrO x ), titanium oxide (TiO x )wait.

[0078] The second organic layer 113 may be integrally disposed on the first barrier layer 112. The second organic layer 113 may include an organic substance having flexibility. For example, the second organic layer 113 may include a random copolymer or a block copolymer. In an exemplary embodiment, the second organic layer 113 may include polyimide.

[0079] A second barrier layer 114 may be integrally disposed on the second organic layer 113. The second barrier layer 114 may block moisture permeated through the second organic layer 113. The second barrier layer 114 may include an inorganic substance having flexibility. In an exemplary embodiment, the second barrier layer 114 may include silicon oxide, silicon nitride, or the like.

[0080] Accordingly, the substrate 110 including the first organic layer 111 , the first barrier layer 112 , the second organic layer 113 , and the second barrier layer 114 may be formed.

[0081] However, although the case where the substrate 110 has four layers is described, the configuration of the present invention is not limited thereto. For example, in other exemplary embodiments, the substrate 110 may also include a single layer or at least two layers.

[0082] In other exemplary embodiments, the substrate 110 may include a transparent or opaque material. For example, the substrate 110 may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate, a sodalime glass substrate, a non-alkali glass substrate, etc.

[0083] A buffer layer 115 may be arranged on the substrate 110 (e.g., the second barrier layer 114). For example, the buffer layer 115 may be arranged on the substrate 110 as a whole. The buffer layer 115 may prevent metal atoms or impurities from diffusing from the substrate 110 to the semiconductor element 250 and the light emitting structure 200, and may adjust the heat transfer rate during the crystallization process for forming the active layer to obtain a substantially uniform active layer. In addition, the buffer layer 115 may play a role in improving the flatness of the surface of the substrate 110 when the surface of the substrate 110 is uneven. Depending on the type of the substrate 110, more than two buffer layers 115 may be arranged on the substrate 110, or no buffer layer 115 may be arranged. For example, the buffer layer 115 may include an organic substance or an inorganic substance.

[0084] The display region 10 on the buffer layer 115 may be provided with an active layer 130. The active layer 130 may include an oxide semiconductor, an inorganic semiconductor (eg, amorphous silicon, polysilicon), or an organic semiconductor, etc. The active layer 130 may have a source region and a drain region.

[0085] A gate insulating layer 150 may be arranged on the active layer 130. The gate insulating layer 150 may cover the active layer 130 in the display area 10 on the buffer layer 115, and may extend from the buffer layer 115 in a first direction D1 that is a direction from the display area 10 to the surrounding area 30. In an exemplary embodiment, the gate insulating layer 150 may include an opening that exposes a portion of the buffer layer 115 in the surrounding area 30. The gate insulating layer 150 may fully cover the active layer 130 on the buffer layer 115, and may have a substantially flat upper surface without generating a step difference around the active layer 130. Optionally, the gate insulating layer 150 may cover the active layer 130 on the buffer layer 115, and be arranged with a uniform thickness along the contour of the active layer 130. The gate insulating layer 150 may include a silicon compound, a metal oxide, etc. Optionally, the gate insulating layer 150 may also have a multilayer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses from each other or include different insulating substances from each other.

[0086] The display area 10 on the gate insulating layer 150 may be arranged with a gate electrode 170. The gate electrode 170 may be arranged on a portion of the gate insulating layer 150 where the active layer 130 is located at the bottom. The gate electrode 170 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive substance, etc. They may be used alone or in combination with each other. Optionally, the gate electrode 170 may include a multilayer structure having a plurality of layers.

[0087] An interlayer insulating layer 190 may be arranged on the gate electrode 170. The interlayer insulating layer 190 may cover the gate electrode 170 in the display area 10 on the gate insulating layer 150, and may extend along the first direction D1 on the gate insulating layer 150. In an exemplary embodiment, the interlayer insulating layer 190 may have an opening in the peripheral area 30 that exposes a portion of the upper surface of the buffer layer 115. In other words, the opening of the interlayer insulating layer 190 may overlap with the opening of the gate insulating layer 150, and the opening may be defined as a groove 930 of the insulating layer structure 300. The interlayer insulating layer 190 may fully cover the gate electrode 170 on the gate insulating layer 150, and may have a substantially flat upper surface without generating a step difference around the gate electrode 170. Optionally, the interlayer insulating layer 190 may also cover the gate electrode 170 on the gate insulating layer 150, and be arranged with a uniform thickness along the contour of the gate electrode 170. The interlayer insulating layer 190 may include a silicon compound, a metal oxide, and the like. Alternatively, the interlayer insulating layer 190 may also have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses or include different insulating materials.

[0088] Accordingly, an insulating layer structure 300 including the buffer layer 115 , the gate insulating layer 150 , and the interlayer insulating layer 190 may be formed.

[0089] The display area 10 on the interlayer insulating layer 190 may be arranged with a source electrode 210 and a drain electrode 230. The source electrode 210 may contact the source region of the active layer 130 through a contact hole formed by removing the gate insulating layer 150 and the first part of the interlayer insulating layer 190, and the drain electrode 230 may contact the drain region of the active layer 130 through a contact hole formed by removing the second part of the gate insulating layer 150 and the interlayer insulating layer 190. The source electrode 210 and the drain electrode 230 may include metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc., respectively. They may be used alone or in combination with each other. In other exemplary embodiments, the source electrode 210 and the drain electrode 230 may have a multilayer structure including a plurality of layers, respectively.

[0090] According to this, the semiconductor element 250 including the active layer 130 , the gate electrode 170 , the source electrode 210 , and the drain electrode 230 can be formed.

[0091] However, although the semiconductor device 250 has an upper gate structure, the present invention is not limited thereto. For example, the semiconductor device 250 may also have a lower gate structure.

[0092] Furthermore, although the organic light emitting display device 100 is described as including one semiconductor element, the configuration of the present invention is not limited thereto. For example, the organic light emitting display device 100 may include at least one semiconductor element and at least one storage capacitor.

[0093] In particular, although the semiconductor element 250 is described as including the active layer 130, the gate electrode 170, the source electrode 210, and the drain electrode 230, the configuration of the present invention is not limited thereto. For example, the semiconductor element 250 may also include the active layer 130, the gate insulating layer 150, the gate electrode 170, the interlayer insulating layer 190, the source electrode 210, and the drain electrode 230.

[0094] The display region 10 on the interlayer insulating layer 190, the source electrode 210, and the drain electrode 230 may be provided with a planarizing layer 270. The planarizing layer 270 may cover the source electrode 210 and the drain electrode 230 in the display region 10 on the interlayer insulating layer 190, and may not be provided in the peripheral region 30. That is, the planarizing layer 270 may be provided only in the display region 10 on the interlayer insulating layer 190. Alternatively, the planarizing layer 270 may be provided in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the display region 10 and the peripheral region 30, and the planarizing layer 270 may not be provided in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the peripheral region 30 and the opening region 20.

[0095] The planarization layer 270 may be arranged in a relatively thick thickness in the display area 10. In this case, the planarization layer 270 may have a substantially flat upper surface, and in order to present the flat upper surface of the planarization layer 270, a planarization process may be added to the planarization layer 270. Optionally, the planarization layer 270 may also be arranged in a uniform thickness along the contours of the source electrode 210 and the drain electrode 230 in the display area 10 on the interlayer insulating layer 190. The planarization layer 270 may be composed of an organic substance or an inorganic substance. In an exemplary embodiment, the planarization layer 270 may include an organic substance. For example, the planarization layer 270 may include a photoresist, a polyacrylic resin, a polyimide resin, a polyamide resin, a siloxane resin, an acrylic resin, an epoxy resin, etc.

[0096] The lower electrode 290 may be arranged in the display area 10 on the planarization layer 270. The lower electrode 290 may be connected to the drain electrode 230 through a contact hole formed by removing a portion of the planarization layer 270, and the lower electrode 290 may be electrically connected to the semiconductor element 250. The lower electrode 290 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive substance, etc. They may be used alone or in combination with each other. In other exemplary embodiments, the lower electrode 290 may also have a multilayer structure including a plurality of layers.

[0097] The pixel defining film 310 may be arranged in the display region 10 on the planarization layer 270, and not arranged in the peripheral region 30. That is, the pixel defining film 310 may be arranged only in the display region 10 on the planarization layer 270. Alternatively, the pixel defining film 310 may be arranged in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the display region 10 and the peripheral region 30, and the pixel defining film 310 may not be arranged in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the peripheral region 30 and the opening region 20.

[0098] The pixel defining film 310 may cover both sides of the lower electrode 290 and expose a portion of the upper surface of the lower electrode 290. The pixel defining film 310 may be made of an organic substance or an inorganic substance. In an exemplary embodiment, the pixel defining film 310 may include an organic substance.

[0099] The light emitting layer 330 may be disposed on the pixel defining film 310 and the lower electrode 290 in the display region 10, may extend along the first direction D1, and may be disposed in the peripheral region 30 on the interlayer insulating layer 190. In an exemplary embodiment, the light emitting layer 330 may be disposed inside the groove 930, and may have a first opening (e.g., Fig.12 That is, the first opening of the light emitting layer 330 may be located inside the groove 930. In other words, the light emitting layer 330 may be separated in the surrounding area 30 through the first opening.

[0100] For example, when the light emitting layer 330 does not have the first opening in the surrounding area 30, the light emitting layer 330 can be used as a moisture penetration path for water and / or moisture. In other words, a portion of the light emitting layer 330 (for example, a side end portion of the light emitting layer 330) can be exposed in the opening area 20, and the water and / or moisture may penetrate through the exposed portion of the light emitting layer 330. In this case, the semiconductor element 250 and the light emitting structure 200 arranged in the display area 10 adjacent to the surrounding area 30 may be damaged by the water and / or moisture. In addition, in an exemplary embodiment of the present invention, since the light emitting layer 330 has the first opening in the surrounding area 30, the light emitting layer 330 can be separated inside the groove 930. That is, the penetration path of the light emitting layer 330 can be blocked by separating the light emitting layer 330 inside the groove 930. Accordingly, even if the light emitting layer 330 is arranged in the surrounding area 30, pixel defects of the organic light emitting display device 100 may not occur.

[0101] The light emitting layer 330 may have a multilayer structure including an organic light emission layer (EML), a hole injection layer (HIL), an electron transport layer (ETL), an electron injection layer (EIL), etc. In an exemplary embodiment, an organic light emitting layer (EML), a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL) may be disposed in the surrounding area 30. In another exemplary embodiment, a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL) other than the organic light emitting layer (EML) may also be disposed in the surrounding area 30.

[0102] The organic light emitting layer (EML) of the light emitting layer 330 can be formed using at least one of the light emitting materials that emit different colors of light (i.e., red light, green light, blue light, etc.) according to the sub-pixel. Differently, the organic light emitting layer (EML) of the light emitting layer 330 can be stacked with multiple light emitting materials that can produce different colors of light such as red light, green light, blue light, etc., and emit white light as a whole. In this case, a color filter can be arranged on the light emitting layer 330 arranged on the lower electrode 290. The color filter may include at least one of a red color filter, a green color filter, and a blue color filter. Selectively, the color filter may also include a yellow color filter, a cyan color filter, and a magenta color filter. The color filter may include a photosensitive resin or a color photoresist.

[0103] The upper electrode 340 may be arranged to overlap the light emitting layer 330 of the display region 10, may extend along the first direction D1, and may be arranged in the peripheral region 30 on the light emitting layer 330. In an exemplary embodiment, the upper electrode 340 may be arranged inside the groove 930, and may have a second opening (e.g., Fig.14 That is, the second opening of the upper electrode 340 may be located inside the groove 930. Also, the second opening of the upper electrode 340 may overlap with the first opening of the light emitting layer 330. In other words, the upper electrode 340 may be separated from the surrounding area 30 by the second opening.

[0104] For example, when the upper electrode 340 does not have the second opening in the surrounding area 30, the upper electrode 340 can be used as a penetration path for moisture and / or humidity. In other words, a portion of the upper electrode 340 (for example, a side end portion of the upper electrode 340) can be exposed in the opening area 20, and the moisture and / or humidity can penetrate through the exposed portion of the upper electrode 340. In this case, the semiconductor element 250 and the light emitting structure 200 arranged in the display area 10 adjacent to the surrounding area 30 may be damaged by the moisture and / or humidity. In addition, in an exemplary embodiment of the present invention, since the upper electrode 340 has the second opening in the surrounding area 30, the upper electrode 340 can be separated inside the groove 930. That is, the penetration path of the upper electrode 340 can be blocked by separating the upper electrode 340 inside the groove 930. Accordingly, even if the upper electrode 340 is arranged in the surrounding area 30, pixel defects of the organic light emitting display device 100 may not occur.

[0105] The upper electrode 340 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive substance, etc. For example, the upper electrode 340 may include gold (Au), silver (Ag), aluminum (Al), tungsten (W), copper (Cu), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), aluminum alloy, aluminum nitride (AlN), etc. x ), silver-containing alloys, tungsten nitride (WN x ), copper-containing alloys, molybdenum-containing alloys, titanium nitride (TiN x ), tantalum nitride (TaN x ), strontium ruthenium oxide (SrRu x O y ), zinc oxide (ZnO x ), indium tin oxide (ITO), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ), indium zinc oxide (IZO), etc. They may be used alone or in combination with each other. In other embodiments, the upper electrode 340 may also have a multilayer structure including a plurality of layers.

[0106] Accordingly, the light emitting structure 200 including the lower electrode 290 , the light emitting layer 330 , and the upper electrode 340 can be formed.

[0107] The cover layer 345 may be arranged to overlap the upper electrode 340 of the display region 10 and extend along the first direction D1, and may be arranged in the peripheral region 30 on the upper electrode 340. In an exemplary embodiment, the cover layer 345 may be arranged inside the groove 930, and may have a third opening (e.g., Fig.17 In other words, the third opening of the capping layer 345 may be located inside the groove 930. Also, the third opening of the capping layer 345 may overlap with the first opening of the light emitting layer 330 and the second opening of the upper electrode 340. In other words, the capping layer 345 may be separated in the surrounding area 30 by the third opening.

[0108] For example, in the case where the covering layer 345 does not have the third opening in the surrounding area 30, the covering layer 345 can be used as a penetration path for moisture and / or humidity. In other words, a portion of the covering layer 345 (e.g., the side end portion of the covering layer 345) can be exposed in the opening area 20, and moisture and / or humidity can penetrate from the exposed portion of the covering layer 345. In this case, the semiconductor element 250 and the light emitting structure 200 arranged in the display area 10 adjacent to the surrounding area 30 may be damaged by the moisture and / or humidity. In addition, in an exemplary embodiment of the present invention, since the covering layer 345 has the third opening in the surrounding area 30, the covering layer 345 can be separated inside the groove 930. That is, the penetration path of the covering layer 345 can be blocked by separating the covering layer 345 inside the groove 930. Accordingly, even if the covering layer 345 is arranged in the surrounding area 30, pixel defects of the organic light emitting display device 100 may not occur.

[0109] The cover layer 345 can protect the light emitting structure 200 and can include an organic substance or an inorganic substance. In an exemplary embodiment, the cover layer 345 can include organic substances such as triamine derivatives, arylenediamine derivatives, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP: 4,4'-bis(N-carbazolyl)-1,1'-biphenyl), tris(8-hydroxyquinoline)aluminum (Alq3: tris-8-hydroxyquinoline aluminum), etc.

[0110] The display area 10 and the surrounding area 30 on the cover layer 345 may be provided with a first thin film encapsulation layer 451. The first thin film encapsulation layer 451 may cover the cover layer 345 in the display area 10, may be provided with a uniform thickness along the contour of the cover layer 345, and may extend to the surrounding area 30. The first thin film encapsulation layer 451 may be provided along the contour of the cover layer 345 in the surrounding area 30. In an exemplary embodiment,

[0111] The first thin film encapsulation layer 451 may directly contact the upper surface of the buffer layer 115 through the first opening, the second opening, and the third opening. The first thin film encapsulation layer 451 may prevent the light emitting structure 200 from being degraded due to the penetration of moisture, oxygen, etc. In addition, the first thin film encapsulation layer 451 may also perform the function of protecting the light emitting structure 200 from external impact. The first thin film encapsulation layer 451 may include an inorganic substance having flexibility.

[0112] The second thin film encapsulation layer 452 may be disposed in the display region 10 on the first thin film encapsulation layer 451, and the second thin film encapsulation layer 452 may not be disposed in the peripheral region 30. That is, the second thin film encapsulation layer 452 may be disposed only in the display region 10. Alternatively, the second thin film encapsulation layer 452 may be disposed in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the display region 10 and the peripheral region 30, and the second thin film encapsulation layer 452 may not be disposed in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the peripheral region 30 and the opening region 20.

[0113] The second thin film encapsulation layer 452 may improve the flatness of the organic light emitting display device 100 and protect the light emitting structure 200. The second thin film encapsulation layer 452 may include an organic material having flexibility.

[0114] The display area 10 on the second thin film encapsulation layer 452 and the surrounding area 30 on the first thin film encapsulation layer 451 may be arranged with a third thin film encapsulation layer 453. The third thin film encapsulation layer 453 may cover the second thin film encapsulation layer 452 in the display area 10, and may be arranged with a uniform thickness along the contour of the second thin film encapsulation layer 452, and may extend to the surrounding area 30. In the surrounding area 30, the third thin film encapsulation layer 453 may be arranged along the contour of the first thin film encapsulation layer 451. The third thin film encapsulation layer 453 may prevent the light emitting structure 200 from being deteriorated due to the penetration of moisture, oxygen, etc. together with the first thin film encapsulation layer 451. In addition, the third thin film encapsulation layer 453 may also perform the function of protecting the light emitting structure 200 from external impact together with the first thin film encapsulation layer 451 and the second thin film encapsulation layer 452. The third thin film encapsulation layer 453 may include an inorganic substance having flexibility.

[0115] Accordingly, a thin film encapsulation structure 450 including a first thin film encapsulation layer 451, a second thin film encapsulation layer 452, and a third thin film encapsulation layer 453 can be formed. Optionally, the thin film encapsulation structure 450 can also be formed as a 5-layer structure consisting of the first to fifth thin film encapsulation layers or a 7-layer structure consisting of the first to seventh thin film encapsulation layers.

[0116] The optical module 700 may be arranged in the opening area 20. For example, the optical module 700 may include a camera module, a face recognition sensor module, a pupil recognition sensor module, an acceleration sensor module, a geomagnetic field sensor module, a proximity sensor module, an infrared sensor module, an illumination sensor module, etc. In other exemplary embodiments, a functional module such as a vibration module may also be arranged in the opening area 20.

[0117] In the conventional organic light-emitting display device, the upper electrode 340 may be separated in the surrounding area 30 by including a lower expanded opening in the groove area. For example, the lower expanded opening may have an undercut shape, and a second organic layer 113 having a first opening of a first width and a second barrier layer 114 having a second opening of a second width overlapping the first opening and smaller than the first width may be formed in the surrounding area 30. Here, the second barrier layer 114 located adjacent to the second opening may be defined as a tip, and the upper electrode 340 may be separated in the surrounding area 30 by the tip. However, the tip is easily damaged by external impact or pressure in the manufacturing process (for example, removal of the lower and / or upper protective film, etc.). In the case where the tip is damaged, the upper electrode 340 may not be separated in the surrounding area 30, and moisture, humidity, etc. may penetrate through the upper electrode 340. That is, it is possible that the pixel included in the organic light-emitting display device is defective due to the moisture, humidity, etc. Furthermore, if the photoresist residue used for patterning the metal layer is not completely removed from the expanded opening to form the first thin film encapsulation layer 451, a film warping phenomenon may occur. In particular, due to the photoresist residue, the organic light emitting display device may be defective in subsequent processes.

[0118] The organic light-emitting display device 100 according to the exemplary embodiment of the present invention includes the light-emitting layer 330 having the first opening, the upper electrode 340 having the second opening, and the capping layer 345 having the third opening inside the groove 930, so that the light-emitting layer 330, the upper electrode 340, and the capping layer 345 can be disconnected in the groove 930 by means of the first opening, the second opening, and the third opening. In other words, the light-emitting layer 330, the upper electrode 340, and the capping layer 345 can be disconnected in the groove 930 without the opening of the undercut shape of the lower expansion. In addition, since the opening of the undercut shape of the lower expansion is not formed, the residue of the photoresist used to pattern the metal layer can be easily removed from the groove 930. That is, the first thin film encapsulation layer 451 and the third thin film encapsulation layer 453 can be easily arranged inside the groove 930 of the peripheral area 30. Accordingly, the organic light emitting display device 100 can easily block water, moisture, etc. from penetrating from the surrounding area 30 into the semiconductor element 250 and the light emitting structure 200 in the display area 10 .

[0119] Figures 7 to 20 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.

[0120] Reference Figure 7 , a hard glass substrate 105 may be provided. A first organic layer 111 may be formed on the glass substrate 105. The first organic layer 111 may be integrally formed on the glass substrate 105, and may be formed using a flexible organic material such as polyimide.

[0121] A first barrier layer 112 may be integrally formed on the first organic layer 111. The first barrier layer 112 may block moisture that penetrates through the first organic layer 111. The first barrier layer 112 may be formed using a flexible inorganic material such as silicon oxide or silicon nitride. For example, the first barrier layer 112 may include silicon oxide, silicon nitride, silicon oxynitride, silicon carbon nitride, silicon carbon nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc.

[0122] The second organic layer 113 may be formed on the first barrier layer 112. The second organic layer 113 may be integrally formed on the first barrier layer 112, and may be formed by using an organic material having flexibility, such as polyimide.

[0123] The second barrier layer 114 may be integrally formed on the second organic layer 113. The second barrier layer 114 may block moisture that penetrates through the second organic layer 113. The second barrier layer 114 may be formed using a flexible inorganic material such as silicon oxide or silicon nitride.

[0124] Accordingly, the substrate 110 including the first organic layer 111 , the first barrier layer 112 , the second organic layer 113 , and the second barrier layer 114 may be formed.

[0125] Since the substrate 110 is thin and ductile, in order to assist the formation of the upper structure (e.g., the semiconductor element 250 and the light emitting structure 200, etc.), the substrate 110 can be formed on a hard glass substrate 105. For example, after the upper structure is formed on the substrate 110, the glass substrate 105 can be removed. In other words, due to the foldable physical properties of the first organic layer 111, the first barrier layer 112, the second organic layer 113, and the second barrier layer 114, it may be difficult to directly form the upper structure on the first organic layer 111, the first barrier layer 112, the second organic layer 113, and the second barrier layer 114. In view of these problems, the glass substrate 105 can be removed after the upper structure is formed using the glass substrate 105, so that the first organic layer 111, the first barrier layer 112, the second organic layer 113, and the second barrier layer 114 can be used as the substrate 110.

[0126] A buffer layer 115 may be formed on the substrate 110. For example, the buffer layer 115 may be formed integrally on the substrate 110. The buffer layer 115 may prevent metal atoms or impurities from diffusing from the substrate 110 to the semiconductor element 250 and the light emitting structure 200, and may adjust the heat transfer rate during the crystallization process for forming the active layer to obtain a substantially uniform active layer. In addition, the buffer layer 115 may play a role in improving the flatness of the surface of the substrate 110 when the surface of the substrate 110 is uneven. Two or more buffer layers 115 may be provided on the substrate 110 or no buffer layer 115 may be arranged depending on the type of the substrate 110. For example, the buffer layer 115 may include an organic substance or an inorganic substance.

[0127] An active layer 130 may be formed in the display region 10 on the substrate 110. The active layer 130 may be formed using an oxide semiconductor, an inorganic semiconductor, or an organic semiconductor, etc. The active layer 130 may have a source region and a drain region.

[0128] Reference Figure 8, a gate insulating layer 150 may be formed on the active layer 130. The gate insulating layer 150 may cover the active layer 130 in the display region 10 on the buffer layer 115, and may extend from the display region 10 on the buffer layer 115 along the first direction D1 which is the direction of the opening region 20. The gate insulating layer 150 may fully cover the active layer 130 on the buffer layer 115, and may have a substantially flat upper surface without forming a step difference around the active layer 130. Optionally, the gate insulating layer 150 may cover the active layer 130 on the buffer layer 115, and may also be formed along the contour of the active layer 130 with a uniform thickness. The gate insulating layer 150 may be formed using a silicon compound, a metal compound, etc. Optionally, the gate insulating layer 150 may also have a multilayer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses from each other or include different insulating substances from each other.

[0129] The gate electrode 170 may be formed in the display region 10 on the gate insulating layer 150. The gate electrode 170 may be formed on a portion of the gate insulating layer 150 where the active layer 130 is disposed below. The gate electrode 170 may be formed using metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. They may be used alone or in combination with each other. Optionally, the gate electrode 170 may include a multilayer structure including a plurality of layers.

[0130] An interlayer insulating layer 190 may be formed on the gate electrode 170. The interlayer insulating layer 190 may cover the gate electrode 170 in the display area 10 on the gate insulating layer 150, and may extend along the first direction D1 on the gate insulating layer 150. The interlayer insulating layer 190 may fully cover the gate electrode 170 on the gate insulating layer 150, and may have a substantially flat upper surface without forming a step difference around the gate electrode 170. Optionally, the interlayer insulating layer 190 may cover the gate electrode 170 on the gate insulating layer 150, and may be formed along the contour of the gate electrode 170 with a uniform thickness. The interlayer insulating layer 190 may be formed using silicon compounds, metal oxides, etc. Optionally, the interlayer insulating layer 190 may also have a multilayer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses from each other or include different insulating substances from each other.

[0131] Accordingly, an insulating layer structure 300 including the buffer layer 115 , the gate insulating layer 150 , and the interlayer insulating layer 190 may be formed.

[0132] Reference Fig. 9, the first contact hole can expose the source region of the active layer 130 by removing a first portion of the gate insulating layer 150 and the interlayer insulating layer 190, and the second contact hole can expose the drain region of the active layer 130 by removing a second portion of the gate insulating layer 150 and the interlayer insulating layer 190.

[0133] Also, the groove 930 may be formed by removing a portion of the insulating layer structure 300 located in the peripheral region 30. For example, the gate insulating layer 150 may have an opening exposing a portion of the upper surface of the buffer layer 115 in the peripheral region 30, and the interlayer insulating layer 190 may have an opening exposing a portion of the upper surface of the buffer layer 115 in the peripheral region 30. Here, the opening of the interlayer insulating layer 190 may overlap with the opening of the gate insulating layer 150, and the opening may be defined as the groove 930 of the insulating layer structure 300. In an exemplary embodiment, the first contact hole, the second contact hole, and the groove 930 may be formed simultaneously.

[0134] The source electrode 210 may fill the first contact hole formed by removing the first portion of the gate insulating layer 150 and the interlayer insulating layer 190, and may be connected to the source region of the active layer 130, while the drain electrode 230 may fill the second contact hole formed by removing the second portion of the gate insulating layer 150 and the interlayer insulating layer 190 and be connected to the drain region of the active layer 130. The source electrode 210 and the drain electrode 230 may be formed using metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc., respectively. They may be used alone or in combination with each other. In other exemplary embodiments, the source electrode 210 and the drain electrode 230 may have a multilayer structure including a plurality of layers, respectively.

[0135] According to this, the semiconductor element 250 including the active layer 130 , the gate electrode 170 , the source electrode 210 , and the drain electrode 230 may be formed.

[0136] A planarization layer 270 may be formed on the display region 10 on the interlayer insulating layer 190, the source electrode 210, and the drain electrode 230. The planarization layer 270 may cover the source electrode 210 and the drain electrode 230 in the display region 10 on the interlayer insulating layer 190, and may not be formed in the peripheral region 30. That is, the planarization layer 270 may be formed only in the display region 10 on the interlayer insulating layer 190. Alternatively, the planarization layer 270 may be formed on the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the display region 10 and the peripheral region 30, and the planarization layer 270 may not be formed on the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the peripheral region 30 and the opening region 20.

[0137] The planarization layer 270 may be formed with a relatively thick thickness in the display area 10. In this case, the planarization layer 270 may have a substantially flat upper surface, and in order to achieve the flat upper surface of the planarization layer 270, the planarization layer 270 may be additionally subjected to a planarization process. Optionally, the planarization layer 270 may also be arranged with a uniform thickness along the contours of the source electrode 210 and the drain electrode 230 in the display area 10 on the interlayer insulating layer 190. The planarization layer 270 may be composed of an organic substance or an inorganic substance. In an exemplary embodiment, the planarization layer 270 may be formed using an organic substance. For example, the planarization layer 270 may include a photoresist, a polyacrylic resin, a polyimide resin, a polyamide resin, a siloxane resin, an acrylic resin, an epoxy resin, and the like.

[0138] The lower electrode 290 may be formed in the display region 10 on the planarization layer 270. The lower electrode 290 may be connected to the drain electrode 230 through a contact hole formed by removing a portion of the planarization layer 270, and the lower electrode 290 may be electrically connected to the semiconductor element 250. The lower electrode 290 may be formed using metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. They may be used alone or in combination with each other. In other exemplary embodiments, the lower electrode 290 may also have a multilayer structure including a plurality of layers.

[0139] The pixel defining film 310 may be formed in the display region 10 on the planarization layer 270, and not formed in the peripheral region 30. That is, the pixel defining film 310 may be arranged only in the display region 10 on the planarization layer 270. Alternatively, the pixel defining film 310 may be arranged in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the display region 10 and the peripheral region 30, and the pixel defining film 310 may not be formed in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the peripheral region 30 and the opening region 20.

[0140] The pixel defining film 310 may cover both sides of the lower electrode 290 and expose a portion of the upper surface of the lower electrode 290. The pixel defining film 310 may be made of an organic substance or an inorganic substance. In an exemplary embodiment, the pixel defining film 310 may be formed using an organic substance.

[0141] The light emitting layer 330 may be formed on the pixel defining film 310 and the lower electrode 290 in the display region 10 and may extend along the first direction D1 and be formed in the peripheral region 30 on the interlayer insulating layer 190. In an exemplary embodiment, the light emitting layer 330 may be continuously formed inside the groove 930.

[0142] Reference Fig.11, the first patterned member 900 may be arranged to overlap with the groove 930. In an exemplary embodiment, the width of the first patterned member 900 in the first direction D1 may be smaller than the width of the groove 930 in the first direction D1. In addition, the first patterned member 900 may be heated in a chamber in a vacuum state for a predetermined time (for example, to improve the bonding force with the organic layer) so that the first patterned member 900 is in direct contact with the light emitting layer 330. The first patterned member 900 may be formed using epoxy, polydimethylsiloxane (PDMS), and the like.

[0143] For example, in the case where the first patterned member 900 and the organic layer are in direct contact, the organic layer may be bonded to the first patterned member 900. In the case where the first patterned member 900 is separated from the organic layer after being in direct contact with the organic layer, an opening may be formed in a portion of the organic layer that is in contact with the first patterned member 900. That is, a portion of the organic layer may be removed (e.g., a lift-off method).

[0144] Reference Fig.12 , after the first patterned member 900 is in direct contact with the light emitting layer 330, the first patterned member 900 may be separated from the light emitting layer 330. In this case, a portion of the light emitting layer 330 may be bonded to the bottom surface of the first patterned member 900. In other words, the light emitting layer 330 may have a first opening 931 exposing a portion of the upper surface of the buffer layer 115 located in the peripheral region 30. That is, the first opening 931 of the light emitting layer 330 may be located inside the groove 930, and the light emitting layer 330 may be separated in the peripheral region 30 through the first opening 931.

[0145] The light emitting layer 330 may have a multi-layer structure including an organic light emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc. In an exemplary embodiment, the organic light emitting layer, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be formed in the surrounding area 30. In another exemplary embodiment, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer in addition to the organic light emitting layer may also be formed in the surrounding area 30.

[0146] The organic light emitting layer (EML) of the light emitting layer 330 can be formed using at least one of the light emitting materials that emit different colors of light (i.e., red light, green light, blue light, etc.) according to the sub-pixel. Differently, the organic light emitting layer (EML) of the light emitting layer 330 can be stacked with multiple light emitting materials that can generate other colors of light such as red light, green light, blue light, etc., and emit white light as a whole. In this case, a color filter can be formed on the light emitting layer 330 arranged on the lower electrode 290. The color filter may include at least one of a red color filter, a green color filter, and a blue color filter. Optionally, the color filter may also include a yellow color filter, a cyan color filter, and a purple color filter. The color filter can be formed using a photosensitive resin or a color photoresist.

[0147] Reference Fig.13 The upper electrode 340 may be formed to overlap the light emitting layer 330 located in the display region 10 , may extend along the first direction D1 , and may be formed in the surrounding region 30 on the light emitting layer 330 . In an exemplary embodiment, the upper electrode 340 may be continuously formed inside the groove 930 .

[0148] After the upper electrode 340 is entirely formed on the light emitting layer 330 , an etching process may be performed on a portion of the upper electrode 340 disposed in the groove 930 .

[0149] Reference Fig.14 , an etching process is performed on a portion of the upper electrode 340 disposed in the groove 930, so that the upper electrode 340 may have a second opening 932 exposing a portion of the upper surface of the buffer layer 115 located in the surrounding area 30. That is, the second opening 932 of the upper electrode 340 may be located inside the groove 930. And, the second opening 932 of the upper electrode 340 may overlap with the first opening 931 of the light emitting layer 330. In other words, the upper electrode 340 may be separated in the surrounding area 30 by the second opening 932.

[0150] The upper electrode 340 can be formed using metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. For example, the upper electrode 340 may include gold, silver, aluminum, tungsten, copper, platinum, nickel, titanium, palladium, magnesium, calcium, lithium, chromium, tantalum, molybdenum, scandium, neodymium, iridium, aluminum-containing alloy, aluminum nitride, silver-containing alloy, tungsten nitride, copper-containing alloy, molybdenum-containing alloy, titanium nitride, tantalum nitride, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. They can be used alone or in combination with each other. In other embodiments, the upper electrode 340 may also have a multilayer structure including a plurality of layers.

[0151] Accordingly, the light emitting structure 200 including the lower electrode 290 , the light emitting layer 330 , and the upper electrode 340 can be formed.

[0152] Reference Fig.15 The capping layer 345 may be overlappedly disposed on the upper electrode 340 located in the display region 10 , may extend along the first direction D1 , and may be disposed in the peripheral region 30 on the upper electrode 340 . In an exemplary embodiment, the capping layer 345 may be continuously formed inside the groove 930 .

[0153] Reference Fig.16 , the second patterned component 950 can be arranged to overlap with the groove 930. In an exemplary embodiment, the width of the second patterned component 950 in the first direction D1 can be smaller than the width of the groove 930 in the first direction D1, and can be smaller than the width of the first opening 931. Moreover, after the second patterned component 950 is heated in a chamber in a vacuum state for a predetermined time, the second patterned component 950 is in direct contact with the covering layer 345. The second patterned component 950 can be formed using epoxy, polydimethylsiloxane, etc. That is, except for the width in the first direction D1, the second patterned component 950 can be substantially the same as the first patterned component 900. Optionally, the width of the first patterned component 900 in the first direction D1 and the width of the second patterned component 950 in the first direction D1 can also be the same. In this case, it is possible to manufacture Figure 6 The organic light emitting display device 100.

[0154] Reference Fig.17 , after the second patterned member 950 is in direct contact with the cover layer 345, the second patterned member 950 may be separated from the cover layer 345. In this case, a portion of the cover layer 345 may be bonded to the bottom surface of the second patterned member 950. In other words, the cover layer 345 may have a third opening 933 that exposes a portion of the upper surface of the buffer layer 115 located in the peripheral area 30. That is, the third opening 933 of the cover layer 345 may be located inside the groove 930, and the cover layer 345 may be separated in the peripheral area 30 through the third opening 933. In an exemplary embodiment, the width of the third opening 933 may be smaller than the widths of both the first opening 931 and the second opening 932. Accordingly, inside the groove 930, the cover layer 345 may cover the side ends of the light emitting layer 330 and the upper electrode 340. In other words, the cover layer 345 may cover both side surfaces of the light emitting layer 330 defining the first opening 931 and both side surfaces of the upper electrode 340 defining the second opening 932.

[0155] The cover layer 345 can protect the light emitting structure 200 and can be formed of an organic substance or an inorganic substance. For example, the cover layer 345 can be formed of an organic substance such as a triamine derivative, an aryl diamine derivative, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), or tris(8-hydroxyquinoline)aluminum (Alq3).

[0156] Reference Fig.18 , a first thin film encapsulation layer 451 may be formed in the display area 10 and the surrounding area 30 on the cover layer 345. The first thin film encapsulation layer 451 may cover the cover layer 345 in the display area 10, may be formed with a uniform thickness along the contour of the cover layer 345, and may extend to the surrounding area 30. The first thin film encapsulation layer 451 may be formed along the contour of the cover layer 345 in the surrounding area 30. In an exemplary embodiment, the first thin film encapsulation layer 451 may be in direct contact with the upper surface of the buffer layer 115 through the third opening. The first thin film encapsulation layer 451 may prevent the light emitting structure 200 from being degraded due to the penetration of moisture, oxygen, etc. In addition, the first thin film encapsulation layer 451 may also perform the role of protecting the light emitting structure 200 from external impact. The first thin film encapsulation layer 451 may be formed using an inorganic substance having flexibility.

[0157] The second thin film encapsulation layer 452 may be formed in the display region 10 on the first thin film encapsulation layer 451, and the second thin film encapsulation layer 452 may not be formed in the peripheral region 30. That is, the second thin film encapsulation layer 452 may be formed only in the display region 10. Alternatively, the second thin film encapsulation layer 452 may be arranged on the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the display region 10 and the peripheral region 30, and the second thin film encapsulation layer 452 may not be formed in the peripheral region 30 on the insulating layer structure 300 adjacent to the boundary between the peripheral region 30 and the opening region 20.

[0158] The second thin film encapsulation layer 452 can improve the flatness of the organic light emitting display device and protect the light emitting structure 200. The second thin film encapsulation layer 452 can be formed using an organic material having flexibility.

[0159] The display area 10 on the second thin film encapsulation layer 452 and the surrounding area 30 on the first thin film encapsulation layer 451 may be formed with a third thin film encapsulation layer 453. The third thin film encapsulation layer 453 may cover the second thin film encapsulation layer 452 in the display area 10, be formed with a uniform thickness along the contour of the second thin film encapsulation layer 452, and may extend to the surrounding area 30. In the surrounding area 30, the third thin film encapsulation layer 453 may be formed along the contour of the first thin film encapsulation layer 451. The third thin film encapsulation layer 453 may prevent the light emitting structure 200 from being degraded due to the penetration of moisture, oxygen, etc. together with the first thin film encapsulation layer 451. In addition, the third thin film encapsulation layer 453 may also perform the function of protecting the light emitting structure 200 from external impact together with the first thin film encapsulation layer 451 and the second thin film encapsulation layer 452. The third thin film encapsulation layer 453 may be formed using an inorganic substance having flexibility.

[0160] Accordingly, a thin film encapsulation structure 450 including a first thin film encapsulation layer 451 , a second thin film encapsulation layer 452 , and a third thin film encapsulation layer 453 may be formed.

[0161] After the thin film encapsulation structure 450 is formed, laser may be irradiated to the opening region 20 on the thin film encapsulation structure 450. Optionally, other etching processes for exposing the opening region 20 on the thin film encapsulation structure 450 may also be performed.

[0162] Reference Fig.19 and Fig. 20 , an opening 910 may be formed in the opening region 20 by the laser irradiation, and an optical module 700 may be formed in the opening 910. For example, the optical module 700 may include a camera module, a face recognition sensor module, a pupil recognition sensor module, an acceleration sensor module, a geomagnetic field sensor module, a proximity sensor module, an infrared sensor module, an illumination sensor module, etc. In other exemplary embodiments, a functional module such as a vibration module may also be formed in the opening region 20. After the optical module 700 is formed, the glass substrate 105 may be separated from the substrate 110. Accordingly, a Fig. 20 The organic light emitting display device shown.

[0163] In the method for manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention, the light emitting layer 330 having the first opening 931, the upper electrode 340 having the second opening 932, and the covering layer 345 having the third opening 933 can be formed by using the first patterned member 900 and the second patterned member 950. Accordingly, the light emitting layer 330, the upper electrode 340, and the covering layer 345 can be disconnected through the first opening 931, the second opening 932, and the third opening 933 in the groove 930 without the opening of the undercut shape with the lower portion expanded, and the organic light emitting display device can easily block water, moisture, etc. from penetrating from the surrounding area 30 to the semiconductor element 250 and the light emitting structure 200 in the display area 10.

[0164] Fig.21 3 is a cross-sectional view showing an organic light emitting display device according to an exemplary embodiment of the present invention. Fig.21 The organic light emitting display device 500 shown may have the same Figures 1 to 6 The organic light emitting display device 100 described above has substantially the same or similar structure. Fig.21 In the example, the reference to Figures 1 to 6 The components described are substantially the same or similar to each other.

[0165] Reference Figures 1 to 6 as well as Fig.21 , the organic light-emitting display device 500 may include a substrate 110, a buffer layer 115, an insulating layer structure 300, a semiconductor element 250, a planarization layer 270, a light-emitting structure 200, a pixel defining film 310, a cover layer 345, a thin film encapsulation structure 450, an optical module 700, etc. Here, the insulating layer structure 300 may include a buffer layer 115, a gate insulating layer 150, and an interlayer insulating layer 190, and the light-emitting structure 200 may include a lower electrode 290, a light-emitting layer 330, and an upper electrode 342. In addition, the thin film encapsulation structure 450 may include a first thin film encapsulation layer 451, a second thin film encapsulation layer 452, and a third thin film encapsulation layer 453.

[0166] The upper electrode 342 may be arranged to overlap on the light emitting layer 330 of the display region 10, may extend along the first direction D1, and may be arranged in the surrounding area 30 on the light emitting layer 330. In an exemplary embodiment, the upper electrode 340 may be continuously arranged inside the groove 930. For example, the upper electrode 342 may fill the first opening of the light emitting layer 330, and may directly contact the upper surface of the buffer layer 115 located inside the groove 930. In other words, the upper electrode 342 may cover the side end of the light emitting layer 330 inside the groove 930, and may directly contact the first thin film encapsulation layer 451 at the third opening of the cover layer 345.

[0167] For example, in a case where the upper electrode 342 is not used as a penetration path for water and / or moisture, the upper electrode 342 can be continuously arranged in the surrounding area 30, and the light-emitting layer 330 and the covering layer 345 used as a penetration path for moisture can be separated in the surrounding area 30 by the first opening and the second opening, respectively.

[0168] Fig. 22 3 is a cross-sectional view showing an organic light emitting display device according to an exemplary embodiment of the present invention. In addition to the light emitting layer pattern 330a and the capping layer pattern 345a, Fig. 22 The organic light emitting display device 800 shown may have the same Figures 1 to 6 The organic light emitting display device 100 described above has substantially the same or similar structure. Fig. 22 In the example, the reference to Figures 1 to 6 The components described are substantially the same or similar to each other.

[0169] Reference Figures 1 to 6 as well as Fig. 22 , the organic light emitting display device 800 may include a substrate 110, an insulating layer structure 300, a semiconductor element 250, a planarization layer 270, a light emitting structure 200, a pixel defining film 310, a cover layer 345, a thin film encapsulation structure 450, an optical module 700, etc. Here, the insulating layer structure 300 may include a buffer layer 115, a gate insulating layer 150, and an interlayer insulating layer 190, and the light emitting structure 200 may include a lower electrode 290, a light emitting layer 330, and an upper electrode 340. In addition, the thin film encapsulation structure 450 may include a first thin film encapsulation layer 451, a second thin film encapsulation layer 452, and a third thin film encapsulation layer 453.

[0170] The light emitting layer 330 may be disposed on the pixel defining film 310 and the lower electrode 290 in the display region 10, may extend along the first direction D1, and may be disposed in the peripheral region 30 on the interlayer insulating layer 190. In an exemplary embodiment, the light emitting layer 330 may be disposed inside the groove 930, and may have a first opening (e.g., Fig.12 That is, the first opening of the light emitting layer 330 may be located inside the groove 930. In addition, a light emitting layer pattern 330a may be arranged at the first opening. In other words, the light emitting layer 330 may be separated in the surrounding area 30 by the first opening and the light emitting layer pattern 330a.

[0171] like Fig.11 and Fig.12As shown, the first opening of the light emitting layer 330 may be formed using the first patterning member 900. In an exemplary embodiment, if the bottom surface of the first patterning member 900 has a concavo-convex shape, the light emitting layer pattern 330a may be formed at the first opening.

[0172] The cover layer 345 may be disposed on the upper electrode 340 in the display region 10, extending in the first direction D1, and may be disposed in the peripheral region 30 on the upper electrode 340. In an exemplary embodiment, the cover layer 345 may be disposed inside the groove 930, and may have a third opening (e.g., Fig.17 In other words, the cover layer 345 may be separated from the surrounding area 30 by the third opening and the cover layer pattern 345a.

[0173] like Fig.16 and Fig.17 As shown, the third opening of the capping layer 345 may be formed using the second patterning member 950. In an exemplary embodiment, when the bottom surface of the second patterning member 950 has a concavo-convex shape, a capping layer pattern 345a may be formed at the third opening.

[0174] The display region 10 and the surrounding region 30 on the cover layer 345 may be provided with a first thin film encapsulation layer 451. The first thin film encapsulation layer 451 may cover the cover layer 345 in the display region 10, may be formed with a uniform thickness along the contour of the cover layer 345, and may extend toward the surrounding region 30. The first thin film encapsulation layer 451 may be formed along the contour of the cover layer 345 in the surrounding region 30. In an exemplary embodiment, the first thin film encapsulation layer 451 may be in direct contact with the upper surface of the buffer layer 115 through the first opening, the second opening, and the third opening, the light emitting layer pattern 330a, and the cover layer pattern 345a.

[0175] Fig.23 9 is a cross-sectional view showing an organic light emitting display device according to an exemplary embodiment of the present invention. Fig.23 The organic light emitting display device 1000 shown in FIG. Figures 1 to 6 The organic light emitting display device 100 described above has substantially the same or similar structure. Fig.23 In the example, the reference to Figures 1 to 6 The components described are substantially the same or similar to each other.

[0176] Reference Figures 1 to 6 as well as Fig.23 , the organic light emitting display device 1000 may include a substrate 110, an insulating layer structure 300, a semiconductor element 250, a planarization layer 270, a light emitting structure 200, a pixel defining film 310, a cover layer 345, a thin film encapsulation structure 450, an optical module 700, etc. Here, the insulating layer structure 300 may include a buffer layer 115, a gate insulating layer 150, and an interlayer insulating layer 190, the light emitting structure 200 may include a lower electrode 290, a light emitting layer 330, and an upper electrode 340, and the thin film encapsulation structure 450 may include a first thin film encapsulation layer 451, a second thin film encapsulation layer 452, and a third thin film encapsulation layer 453.

[0177] In an exemplary embodiment, the insulating layer structure 300 may further include a first groove 930 and a second groove 935 formed in the peripheral region 30, and each of the light emitting layer 330, the upper electrode 340, and the capping layer 345 is spaced inside each of the first groove 930 and the second groove 935. In other words, each of the light emitting layer 330, the upper electrode 340, and the capping layer 345 may have an opening inside each of the first groove 930 and the second groove 935.

[0178] The light emitting layer 330 may be disposed on the pixel defining film 310 and the lower electrode 290 in the display region 10, may extend along the first direction D1, and may be disposed in the peripheral region 30 on the interlayer insulating layer 190. In an exemplary embodiment, the light emitting layer 330 may be disposed inside each of the first groove 930 and the second groove 935, and may have a first opening exposing a first portion of the upper surface of the buffer layer 115 located in the peripheral region 30 and a second opening exposing a second portion of the upper surface of the buffer layer 115. That is, the first opening of the light emitting layer 330 may be located inside the first groove 930, and the second opening of the light emitting layer 330 may be located inside the second groove 935. In other words, the light emitting layer 330 may be separated in the peripheral region 30 by the first opening and the second opening.

[0179] The upper electrode 340 may be arranged to overlap on the light emitting layer 330 of the display region 10, may extend in the first direction D1, and may be arranged in the surrounding region 30 on the light emitting layer 330. In an exemplary embodiment, the upper electrode 340 may be arranged inside each of the first groove 930 and the second groove 935, and may have a third opening exposing the first portion of the upper surface of the buffer layer 115 located in the surrounding region 30 and a fourth opening exposing the second portion of the upper surface of the buffer layer 115 located in the surrounding region 30. That is, the third opening of the upper electrode 340 may be located inside the first groove 930, and the fourth opening of the upper electrode 340 may be located inside the second groove 935. Also, the third opening of the upper electrode 340 may overlap with the first opening of the light emitting layer 330, and the fourth opening of the upper electrode 340 may overlap with the second opening of the light emitting layer 330. In other words, the upper electrode 340 may be separated in the surrounding region 30 by the third opening and the fourth opening.

[0180] The capping layer 345 may be arranged to overlap on the upper electrode 340 of the display region 10, may extend in the first direction D1, and may be arranged in the peripheral region 30 on the upper electrode 340. In an exemplary embodiment, the capping layer 345 may be arranged inside each of the first groove 930 and the second groove 935, respectively, and may have a fifth opening exposing the first portion of the upper surface of the buffer layer 115 located in the peripheral region 30 and a sixth opening exposing the second portion of the upper surface of the buffer layer 115 located in the peripheral region 30. That is, the fifth opening of the capping layer 345 may be located inside the first groove 930, and the sixth opening of the capping layer 345 may be located inside the second groove 935. Also, the fifth opening of the capping layer 345 may overlap with the first opening of the light emitting layer 330 and the third opening of the upper electrode 340, and the sixth opening of the capping layer 345 may overlap with the second opening of the light emitting layer 330 and the fourth opening of the upper electrode 340. In other words, the capping layer 345 may be separated in the peripheral region 30 by the fifth opening and the sixth opening.

[0181] Fig.24 is a cross-sectional view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention. Fig.24 The organic light emitting display device 1100 shown may have the same Figures 1 to 6 The organic light emitting display device 100 described above has substantially the same or similar structure. Fig.24 , will omit the reference Figures 1 to 6 The components described are substantially the same or similar to each other.

[0182] Reference Figures 1 to 6 as well as Fig.24 , the organic light emitting display device 1100 may include a substrate 110, an insulating layer structure 300, a semiconductor element 250, a planarization layer 270, a light emitting structure 200, a pixel defining film 310, a cover layer 345, a thin film encapsulation structure 450, an optical module 700, etc. Here, the insulating layer structure 300 may include a buffer layer 115, a gate insulating layer 150, and an interlayer insulating layer 190, the light emitting structure 200 may include a lower electrode 290, a light emitting layer 330, and an upper electrode 340, and the thin film encapsulation structure 450 may include a first thin film encapsulation layer 451, a second thin film encapsulation layer 452, and a third thin film encapsulation layer 453.

[0183] A gate insulating layer 150 may be disposed on the active layer 130. The gate insulating layer 150 may cover the active layer 130 in the display region 10 on the buffer layer 115, and may extend in a first direction D1, which is a direction from the display region 10 to the opening region 20, on the gate insulating layer 150. In an exemplary embodiment, the gate insulating layer 150 may be integrally disposed in the display region 10 and the surrounding region 30 on the buffer layer 115.

[0184] An interlayer insulating layer 190 may be disposed on the gate electrode 170. The interlayer insulating layer 190 may cover the gate electrode 170 in the display region 10 on the gate insulating layer 150, and may extend along the first direction D1 in the gate insulating layer 150. In an exemplary embodiment, the interlayer insulating layer 190 may be disposed integrally in the display region 10 and the surrounding region 30 on the gate insulating layer 150.

[0185] Accordingly, the insulating layer structure 300 including the buffer layer 115 , the gate insulating layer 150 , and the interlayer insulating layer 190 may be formed.

[0186] The light emitting layer 330 may be disposed on the pixel defining film 310 and the lower electrode 290 in the display region 10, may extend along the first direction D1, and may be disposed in the peripheral region 30 on the interlayer insulating layer 190. In an exemplary embodiment, the light emitting layer 330 may be disposed on the insulating layer structure 300, and may have a first opening exposing a first portion of the upper surface of the interlayer insulating layer 190 located in the peripheral region 30 and a second opening exposing a second portion of the upper surface of the interlayer insulating layer 190. That is, the first opening and the second opening of the light emitting layer 330 may be located on the insulating layer structure 300. In other words, the light emitting layer 330 may be separated from the peripheral region 30 on the insulating layer structure 300 by the first opening and the second opening.

[0187] The upper electrode 340 is arranged to overlap on the light emitting layer 330 of the display region 10, may extend along the first direction D1, and may be arranged in the surrounding region 30 on the light emitting layer 330. In an exemplary embodiment, the upper electrode 340 may be arranged on the light emitting layer 330, and may have a third opening exposing the first portion of the upper surface of the interlayer insulating layer 190 located in the surrounding region 30 and a fourth opening exposing the second portion of the upper surface of the interlayer insulating layer 190. That is, the third opening and the fourth opening of the upper electrode 340 may be located on the insulating layer structure 300. Furthermore, the third opening of the upper electrode 340 may overlap with the first opening of the light emitting layer 330, and the fourth opening of the upper electrode 340 may overlap with the second opening of the light emitting layer 330. In other words, the surrounding region 30 of the upper electrode 340 on the insulating layer structure 300 may be separated by the third opening and the fourth opening.

[0188] The cover layer 345 may be arranged to overlap the upper electrode 340 of the display region 10, may extend in the first direction D1, and may be arranged in the peripheral region 30 on the upper electrode 340. In an exemplary embodiment, the cover layer 345 may be arranged on the upper electrode 340, and may have a fifth opening exposing the first portion of the upper surface of the interlayer insulating layer 190 located in the peripheral region 30 and a sixth opening exposing the second portion of the upper surface of the interlayer insulating layer 190. That is, the fifth opening and the sixth opening of the cover layer 345 may be located on the insulating layer structure 300. Also, the fifth opening of the cover layer 345 may overlap with the first opening of the light emitting layer 330 and the third opening of the upper electrode 340, and the sixth opening of the cover layer 345 may overlap with the second opening of the light emitting layer 330 and the fourth opening of the upper electrode 340. In other words, the cover layer 345 may be separated from the peripheral region 30 on the insulating layer structure 300 by the fifth opening and the sixth opening.

[0189] As described above, although the present invention has been described with reference to exemplary embodiments, it will be understood by those having ordinary knowledge in the relevant technical field that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention.

[0190] Industrial Applicability

[0191] The present invention can be applied to various display devices that can be equipped with an organic light-emitting display device. For example, the present invention can be applied to various display devices such as display devices for vehicles, ships, and aircraft equipment, portable communication devices, display devices for display or information transmission, and medical display devices.

Claims

1. An organic light emitting display device, comprising: A substrate including an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area, and having an opening formed in the opening area; An insulating layer structure, arranged in the display area and the surrounding area on the substrate; a light emitting layer, arranged on the insulating layer structure in the display region, extending along a first direction which is a direction from the display region to the surrounding region, and having a first opening in the surrounding region; as well as An optical module is arranged in the opening, The insulating layer structure includes a first groove formed in the peripheral area. A portion of the light emitting layer is arranged in the first groove, the first opening is located at a bottom surface of the first groove, and a width of the first opening is smaller than a width of the bottom surface of the first groove.

2. The organic light emitting display device according to claim 1, wherein: The insulating layer structure comprises: a gate insulating layer disposed on the substrate and having an opening in the peripheral region; and An interlayer insulating layer is disposed on the gate insulating layer and has an opening in the peripheral region that overlaps with the opening of the gate insulating layer.

3. The organic light emitting display device according to claim 2, wherein: The insulating layer structure further comprises: a buffer layer, sandwiched between the substrate and the gate insulating layer, The opening of the gate insulating layer and the opening of the interlayer insulating layer are defined as the first groove of the insulating layer structure.

4. The organic light emitting display device according to claim 3, characterized in that: Also includes: a first inorganic thin film encapsulation layer, arranged on the light-emitting layer to overlap with the light-emitting layer, filling the first opening, and covering the light-emitting layer in the surrounding area; as well as a second inorganic thin film encapsulation layer, arranged on the first inorganic thin film encapsulation layer to overlap with the first inorganic thin film encapsulation layer, and covering the first inorganic thin film encapsulation layer in the surrounding area, The first inorganic thin film encapsulation layer contacts the buffer layer through the first opening.

5. The organic light emitting display device according to claim 1, wherein: Also includes: The upper electrode is arranged on the light emitting layer so as to overlap with the light emitting layer.

6. A method for manufacturing an organic light emitting display device, comprising the following steps: providing a substrate including an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area; forming an insulating layer structure in the display area and the surrounding area on the substrate; Removing at least a portion of the insulating layer structure located in the peripheral area to form a groove; forming a light emitting structure inside the groove, and removing a portion of the light emitting structure formed in the groove to form an opening of the light emitting structure; continuously forming a first inorganic thin film encapsulation layer in a manner of filling the opening of the light emitting structure; as well as An opening is formed in the opening region of the substrate.

7. The method for manufacturing an organic light emitting display device according to claim 6, wherein: The steps of forming the light emitting structure and the opening include the following steps: forming a light-emitting layer inside the groove; bringing a first patterned member into contact with a portion of the light emitting layer formed in the groove; forming a first opening of the light emitting layer by separating the first patterned member from the light emitting layer and removing a portion of the light emitting layer formed in the groove; forming an upper electrode on the light-emitting layer so as to overlap with the light-emitting layer; as well as A second opening is formed in the upper electrode so as to overlap with the first opening of the light emitting layer.

8. The method for manufacturing an organic light emitting display device according to claim 6, wherein: After the step of forming the opening in the opening area, the following steps are also included: An optical module is formed in the opening.

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