Embedded capacitor structure and its fabrication method, storage device

By forming an intermediate layer and a first support layer on the substrate, forming a capacitance hole and ion implantation to remove the electrode opening part, the problems of high cost of use and difficulty in alignment of the immersive exposure machine are solved, and efficient and accurate capacitance preparation is achieved, reducing costs and improving efficiency and yield.

CN111403601BActive Publication Date: 2025-03-28CHANGXIN MEMORY TECH INC
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Patent Information

Application Number
CN201910005114.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2019-01-03
Publication Date
2025-03-28
Estimated Expiration
2039-01-03

AI Technical Summary

Technical Problem

When preparing embedded capacitor structures of small sizes, the use of immersive exposure machines is expensive and difficult to effectively align with the capacitor deep grooves, resulting in difficulty in filling the dielectric layer and reducing the preparation efficiency and yield.

Method used

By forming an intermediate layer and a first support layer on one side of the substrate, a capacitor hole is formed and the first electrode covering its inner surface is then implanted into the opening portion of the first electrode in a preset direction, changing its physical and chemical properties and removing the region where the ions are implanted are formed. The intermediate layer is then removed to form a dielectric layer covering the first electrode and a second electrode.

Benefits of technology

This method does not require the use of an immersive exposure machine, which avoids the reduction in efficiency and yield caused by poor alignment of the grid pattern structure and capacitor holes, and can efficiently and accurately form openings on the first electrode, reducing the cost of capacitance preparation, and improving the production efficiency and yield.

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Abstract

The present disclosure provides an embedded capacitor structure and a preparation method and a storage device, belonging to the field of semiconductor technology. The preparation method of the embedded capacitor structure includes: forming an intermediate layer on one side of a substrate; forming a first supporting layer on the side of the intermediate layer away from the substrate; forming a capacitor hole, the capacitor hole penetrates the intermediate layer and the first supporting layer; forming a first electrode covering the inner surface of the capacitor hole; on the side of the first supporting layer away from the substrate, ion implantation is performed in a preset direction to a partial area of ​​the first electrode away from the substrate, and the preset direction is inclined relative to the extension direction of the capacitor hole; removing the area of ​​the first electrode where ions are implanted, so that the first electrode has an opening, and the opening exposes part of the intermediate layer; forming a dielectric layer covering the first electrode; forming a second electrode covering the dielectric layer. The preparation method can improve the preparation efficiency and yield of the embedded capacitor structure.
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