Display device

Abstract

The present disclosure provides a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a portion of the gate line; and a light-emitting element connected to the transistor, wherein the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metal titanium nitride. The N / Ti molar ratio of the metal titanium nitride may be in the range of about 0.2 to about 0.75.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0006374 filed on January 17, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a display device and a manufacturing method thereof, and more particularly to a display device including a TiN x A display device with aluminum wiring and a method for manufacturing the same. Background Art

[0004] The active mode emission display device is composed of a light-emitting element (light-emitting diode) including an anode (hole injection electrode), an emission layer and a cathode (electron injection electrode), and a thin film transistor that drives the light-emitting element. Electrons and holes are injected into the emission layer from the anode and the cathode, respectively, and when the excitons formed by coupling the holes and electrons injected into the emission layer fall from the excited state to the ground state, light is emitted. The image displayed by the display device is realized by light emission. The display device includes drive wiring such as gate lines and data lines. These drive wirings can have a multi-layer structure and can include different materials for each layer. Improper material selection and / or structural design of these drive wirings may reduce the performance of the display device and / or make the display device lose reliability. Summary of the invention

[0005] Exemplary embodiments of the present disclosure provide a display device and a method of manufacturing the same, which prevent undercuts in hillocks of wirings, prevent diffusion at interfaces and the need for a cleaning process, and reduce particle generation during a manufacturing process.

[0006] A display device according to an exemplary embodiment of the present disclosure includes: a substrate; a gate line arranged on the substrate; a transistor including a portion of the gate line; and a light emitting element connected to the transistor; wherein the gate line includes: a first layer including aluminum or an aluminum alloy; a second layer including titanium nitride; and a third layer including metal titanium nitride, wherein the N / Ti molar ratio of the metal titanium nitride is in the range from about 0.2 to about 0.75.

[0007] The N / Ti molar ratio of the titanium nitride of the second layer may be in a range from about 0.8 to about 1.2.

[0008] The aluminum alloy of the first layer may include at least one of Ni, La, Nd, and Ge.

[0009] The content of materials other than aluminum in the aluminum alloy may be 1 mol % or less.

[0010] The thickness of the second layer may range from about 50 angstroms to about 400 angstroms.

[0011] The thickness of the third layer may be in a range from about 200 angstroms to about 1200 angstroms.

[0012] The first layer may be closer to the substrate than the third layer.

[0013] A content of titanium included in the third layer may be greater than a content of titanium included in the second layer.

[0014] The gate line may not include a layer made of only titanium.

[0015] A display device according to an exemplary embodiment of the present disclosure includes: a substrate; a gate line arranged on the substrate; a transistor including a portion of the gate line; and a light emitting element connected to the transistor, wherein the gate line includes: a first layer including aluminum or an aluminum alloy; and a second layer including metal titanium nitride, wherein the metal titanium nitride has an N / Ti molar ratio in a range from about 0.2 to about 0.75.

[0016] The thickness of the second layer may range from about 200 angstroms to about 1200 angstroms.

[0017] The aluminum alloy of the first layer may include at least one of Ni, La, Nd, and Ge, and a content of materials other than aluminum in the aluminum alloy may be 1 mol % or less.

[0018] A display device according to an exemplary embodiment of the present disclosure includes: a substrate; a gate line arranged on the substrate; a data line insulated from and crossing the gate line; a transistor including a portion of the gate line and a portion of the data line; and a light emitting element connected to the transistor, wherein at least one of the gate line and the data line includes: a first layer including aluminum or an aluminum alloy; a second layer including titanium nitride; and a third layer including metallic titanium nitride, wherein the N / Ti molar ratio of the metallic titanium nitride is in the range from about 0.2 to about 0.75, and the content of titanium contained in the third layer is greater than the content of titanium contained in the second layer.

[0019] The N / Ti molar ratio of the titanium nitride of the second layer may be in a range from about 0.8 to about 1.2.

[0020] The aluminum alloy of the first layer may include at least one of Ni, La, Nd, and Ge, and a content of materials other than aluminum in the aluminum alloy may be 1 mol % or less.

[0021] The thickness of the second layer may range from about 50 angstroms to about 400 angstroms.

[0022] The thickness of the third layer may be in a range from about 200 angstroms to about 1200 angstroms.

[0023] The first layer may be closer to the substrate than the third layer.

[0024] At least one of the gate line and the data line may not include a layer made of only titanium.

[0025] The manufacturing method of the display device according to the exemplary embodiment of the present disclosure includes: depositing aluminum or an aluminum alloy on a substrate to form a first layer; supplying N into a chamber; 2 At the same time, a TiN layer is formed on the first layer by using a Ti target. x The second layer, wherein x is a real number less than 4; supplying N to the chamber 2 At the same time, a TiN metal layer is formed on the second layer by using a Ti target. x The third layer, wherein in forming the third layer, N 2 The supply flow rate is in the range from about 10 sccm to about 45 sccm.

[0026] In forming the second layer, N 2 The supply flow rate may be about 60 sccm or greater.

[0027] In forming the second layer, TiN in which a molar ratio of N / Ti is in a range of about 0.8 to about 1.2 may be formed. x .

[0028] In forming the third layer, a metal TiN is formed in which a molar ratio of N / Ti may be in a range of from about 0.2 to about 0.75. x .

[0029] The forming of the second layer and the forming of the third layer may be performed continuously.

[0030] The manufacturing method of the display device according to the exemplary embodiment of the present disclosure includes: depositing aluminum or an aluminum alloy on a substrate to form a first layer; supplying N into a chamber; 2 while forming a second layer including titanium nitride on the first layer by using a Ti target; supplying N 2A third layer including metal titanium nitride is formed on the second layer by using a Ti target at the same time to form a gate line or a data line each including the first layer, the second layer and the third layer; the gate line or the data line is annealed at a temperature ranging from about 400° C. to about 580° C. without forming a hillock on the first layer and without increasing the resistance of the gate line or the data line; and a cleaning process is performed on the gate line or the data line using an HF solution without forming an undercut in the gate line or the data line.

[0031] In forming the second layer, titanium nitride is formed in which the molar ratio of N / Ti may be in the range from about 0.8 to about 1.2, and in forming the third layer, metallic titanium nitride is formed in which the molar ratio of N / Ti may be in the range from about 0.2 to about 0.75. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and other aspects and features of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0033] Figure 1 is a diagram schematically showing a cross section of a gate line of a display device according to an exemplary embodiment of the present disclosure;

[0034] Figure 2 is a diagram showing an image in which hillocks are generated on an aluminum surface;

[0035] Figure 3 is a diagram showing a comparison of the resistance of wiring of an Al / Ti structure before and after heat treatment;

[0036] Figure 4 is a diagram showing a wiring cross section of a Ti / Al / Ti structure;

[0037] Figure 5 is a diagram showing the contents of Ti, Al, etc. in each area of ​​the wiring;

[0038] Figure 6 is a diagram showing an image of wiring of an Al / Ti structure after a cleaning process using HF;

[0039] Figure 7 Figure 2 shows the Al / TiN after the cleaning process using HF. x A diagram of an image of a wiring structure;

[0040] Figure 8 is a graph showing the number of particles in the chamber as the cumulative number increases;

[0041] Fig. 9 is a diagram showing defects caused by particles;

[0042] Fig.10 is a diagram showing a cross section of a wiring having an Al / Ti structure after an HF cleaning process;

[0043] Figures 11 to 13 Figures 1 and 2 show the Al / TiN metal after HF cleaning process. x a cross-sectional view of the wiring of the structure;

[0044] Fig.14 is shown to depend on the metal TiN x N in the chamber during the formation process 2 Gas content TiN x A graph of the characteristics of

[0045] Fig.15 The figure shows the case where only Ti (Ti) is deposited, the case where TiN is deposited x Layer (TiN x ) and the deposition of metal TiN x (Metal TiN x ) is a graph of the cumulative number of particles in the case of

[0046] Fig.16 It is shown that by x (TN) / Metal TiN x A diagram showing the results of measuring sheet resistance by distinguishing the thickness of each layer and the N content in the wiring of the (mTN) structure;

[0047] Fig.17 is a diagram showing sheet resistance depending on the number of cleaning times in a wiring having an Al / TiN structure and a wiring having an Al / Ti structure;

[0048] Fig.18 is a diagram showing gate lines of a display device according to an exemplary embodiment of the present disclosure;

[0049] Fig.19 is a diagram showing a data line of a display device according to an exemplary embodiment of the present disclosure;

[0050] Fig. 20 is a diagram showing a data line of a display device according to an exemplary embodiment of the present disclosure;

[0051] Fig.21 is a top view schematically showing a display device according to an exemplary embodiment of the present disclosure; and

[0052] Fig. 22 is along Fig.21 A cross-sectional view taken along line XXII-XXII'.

[0053] because Figures 1 to 22The drawings in the drawings are intended for illustrative purposes, and the elements in the drawings are not necessarily drawn to scale. For example, some elements may be enlarged or exaggerated for clarity. DETAILED DESCRIPTION

[0054] The present disclosure will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the present disclosure are shown. As those skilled in the art will appreciate, the described exemplary embodiments may be modified in various different ways, all without departing from the spirit or scope of the present disclosure.

[0055] In order to clarify the description of the present disclosure, parts irrelevant to the description are omitted, and the same drawing reference numerals will be used throughout the specification to refer to the same or like parts.

[0056] In addition, the size and thickness of each configuration shown in the drawings are arbitrarily shown for better understanding and ease of description, but the present disclosure is not limited thereto.

[0057] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements. Furthermore, in the specification, the terms "on" or "over" may mean being above or below an object part, and do not necessarily mean being on the upper side of the object part based on the direction of gravity.

[0058] As used herein, "about" includes the stated value and the average of the stated value within an acceptable range of deviation as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0059] In addition, unless explicitly described to the contrary, the word “comprise” and variations such as “comprising” or “including” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0060] Furthermore, in this specification, the phrase “top view” means observing an object portion from the top, and the phrase “cross-sectional view” means viewing a cross section of the object portion cut vertically from the side.

[0061] The present disclosure relates to a display device and a manufacturing method thereof, wherein a gate line or a data line has a first layer containing aluminum (Al) or an aluminum alloy / a first layer containing N-rich titanium nitride (TiN x ) of the second layer / containing Ti-rich metal titanium nitride (metal TiN x) or a first layer comprising aluminum or an aluminum alloy / a TiN containing a Ti-rich metal x The second layer of the structure.

[0062] Now, a display device according to exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0063] Figure 1 is a diagram showing a gate line 121 in a display device according to an exemplary embodiment of the present disclosure. Figure 1 , the gate line 121 according to the present exemplary embodiment includes a first layer 121a, a second layer 121b, and a third layer 121c sequentially stacked on a substrate. For example, the first layer 121a is disposed closer to the substrate than the third layer 121c.

[0064] The first layer 121a may be aluminum or an aluminum alloy. The display device according to this exemplary embodiment may be a display device with a high resolution of 500ppi or more. For such a high-resolution display device, it is desirable to reduce the scanning delay. In other words, the gate line 121 of the display device may require a low resistance. For the case where the gate line contains molybdenum (Mo), the resistance is about 0.55Ω / sq (ohm / □), which is higher than the resistance of aluminum, which is 0.15Ω / sq (ohm / □). Thus, when the gate line contains molybdenum, it is impossible to scan the full swing, horizontal lines are identified in the display device, and random stains increase. However, since the gate line 121 according to this exemplary embodiment contains low-resistance aluminum or aluminum alloy instead of molybdenum, it is possible to scan the full swing, and stain compensation time can be ensured. Therefore, the display quality can be improved.

[0065] The first layer 121a may be aluminum or an aluminum alloy. The aluminum alloy may contain, for example, at least one of nickel (Ni), lanthanum (La), neodymium (Nd), and germanium (Ge) with aluminum. However, the content of materials other than aluminum in the aluminum alloy may be 1 mol % or less.

[0066] When the first layer 121 a includes an aluminum alloy, the occurrence of hillocks can be prevented compared to the case where only aluminum is included in the first layer 121 a .

[0067] When the gate line 121 is formed of aluminum, hillocks may appear in a subsequent annealing process. Annealing is performed at a temperature ranging from about 400°C to about 580°C. This heating results in the formation of multiple protrusions (= hillocks) on the aluminum surface. Hillock formation may have a significant impact on the yield and reliability of semiconductor devices. For example, yield loss may occur when a short circuit is formed between two interconnect layers due to a large hillock. For example, the gate line 121 may form a short circuit with an adjacent conductor. For smaller hillocks, the high electric field generated near the tip of the hillock may still slowly degrade the isolation properties of the surrounding dielectric and may cause catastrophic failures, resulting in reliability losses over the life of the semiconductor device. Figure 2 is a diagram showing an image in which hillocks appear on the aluminum surface. However, when an aluminum alloy is used, the heat resistance of the gate line 121 increases and hillocks can be prevented. However, if the content of the non-aluminum material in the aluminum alloy exceeds 1 mol %, the resistance of the wiring increases, which is undesirable.

[0068] The second layer 121b includes N-rich TiN x TiN in this specification x The x contained in may be 0.1 to 4 and may represent the molar ratio of N / Ti. x x included in may be a real number less than 4. In the present exemplary embodiment, the TiN in the second layer 121b x The molar ratio of N / Ti in the second layer 121b may be in the range of about 0.8 to about 1.2. x The second layer 121b has a N-rich property because it may contain more N than Ti. For example, the N-rich TiN in the second layer 121b x The molar ratio of N / Ti in the second layer 121b may be greater than 1. For example, the N-rich TiN x A molar ratio of N / Ti may be in a range from about 1 to about 1.2. A thickness of the second layer 121 b may be in a range from about 50 angstroms to about 400 angstroms.

[0069] The second layer 121b covers the first layer 121a made of aluminum or an aluminum alloy to prevent the generation of aluminum hillocks. However, when the second layer 121b contains only Ti, diffusion occurs at the interface of the first layer 121a containing aluminum and the second layer 121b containing titanium, thereby forming an alloy of titanium and aluminum. Therefore, the resistance increases. As described above, aluminum has a low resistance, while the resistance of titanium is about ten times higher. Therefore, when titanium diffuses into the first layer 121a to form an alloy of titanium and aluminum, a significant increase in resistance may occur on the first layer 121a.

[0070] Figure 3: is a graph showing a comparison of the resistance of the wiring of the Al / Ti structure before and after the heat treatment. Figure 3 , it can be confirmed that the resistance of the wiring after the heat treatment is significantly increased compared to before the heat treatment. This is because the alloy is formed due to the diffusion of aluminum and titanium at the interface between aluminum and titanium. Figure 4 is a diagram showing a wiring cross section of a Ti / Al / Ti structure. Figure 4 In the figure, the part indicated by the dotted line is the part where diffusion occurs at the interface. Figure 4 As confirmed in , when aluminum is covered by titanium, diffusion occurs at the boundary surface.

[0071] Figure 5 Graph showing the contents of Ti, Al, etc. in each region of the wiring. Figure 5 , diffusion occurs in the boundary region of aluminum and titanium (the portion indicated by the dotted line), so that the content ratio of aluminum and titanium becomes similar. That is, when the second layer made of titanium is disposed on the first layer 121a made of aluminum, it can be confirmed that diffusion occurs at the interface of aluminum and titanium, so that the resistance increases. Figure 3 As shown, the resistance of the wiring of the Al / Ti structure after the heat treatment is significantly increased compared with that before the heat treatment.

[0072] However, in the gate line 121 according to the present exemplary embodiment, the gate line 121 made of TiN x The second layer 121b made of TiN is disposed on the first layer 121a made of aluminum. x The molar ratio of N / Ti in the second layer 121b may be in the range of about 0.8 to about 1.2. That is, the second layer 121b includes N-rich TiN x Therefore, the formation of titanium and aluminum in TiN can be suppressed. x When the second layer 121b contains only titanium, diffusion between metallic titanium and metallic aluminum occurs. However, the second layer 121b in this exemplary embodiment contains TiN x , which contains a larger content of non-metallic N, so that the diffusion at the interface of titanium and aluminum can be suppressed. In addition, by using TiN x By using a layer having a N / Ti molar ratio in the range of about 0.8 to about 1.2 as the second layer 121b according to the present exemplary embodiment, instead of using a layer having a N / Ti molar ratio of about 0.8 or less, so as to have a lower titanium content, the formation of an alloy containing titanium and aluminum can be significantly reduced. Therefore, after a subsequent annealing process, the resistance of the first layer 121a containing aluminum or an aluminum alloy can be kept low.

[0073] In addition, in the case of a wiring having an Al / Ti structure, the Al / Ti wiring is damaged due to hydrofluoric acid (HF) in a cleaning process. In order to remove oxides and the like formed on the surface after forming the wiring, a cleaning process using a cleaning solution is performed. The cleaning solution includes HF. The HF cleaning solution etches the Al / Ti wiring surface exposed by the contact hole. However, since the gate line 121 according to the present exemplary embodiment includes TiN x Instead of Ti as the second layer 121b, it is possible to prevent the wiring from being damaged during the cleaning process. Hydrofluoric acid (HF) is the main chemical substance commonly used to etch titanium. On the other hand, unlike titanium, N-rich TiN x Very stable to HF cleaning solutions, so no damage occurs during the cleaning process. Typically, except for nitric acid (HNO 3 ), titanium nitride is stable in most acids including HF.

[0074] Figure 6 is a diagram showing an image of a wiring of an Al / Ti structure after a cleaning process using HF. Figure 7 Figure 2 shows the Al / TiN after a cleaning process using HF. x Figure 1. Image of the wiring structure. Figure 6 and Figure 7 In FIG. 1 , the contact hole is indicated by a circle, and the upper surface of the wiring is exposed through the contact hole. Figure 6 In the case of the wiring of the Al / Ti structure, it can be confirmed that titanium and aluminum are etched and damaged after the cleaning process using HF. Figure 6 In the case of damaged parts, the damaged parts are considered mottled. However, Figure 7 It can be confirmed that for Al / TiN x The wiring of the structure has no damage on the surface of the wiring even after the cleaning process using HF.

[0075] The thickness of the second layer 121b may be in the range of about 50 angstroms to about 400 angstroms. If the thickness of the second layer 121b is less than about 50 angstroms, the formation of hillocks may not be sufficiently prevented, and diffusion may occur at the boundary between the first layer 121a and the second layer 121b. Moreover, when the thickness of the second layer 121b is greater than about 400 angstroms, productivity is undesirably reduced.

[0076] Next, the third layer 121c may include metal TiN x In this specification, metal TiN x Refers to a material that exhibits metal-like properties when the Ti content is high. x In the embodiment of the present invention, the molar ratio of N / Ti may be in the range of about 0.2 to about 0.75. In detail, the metal TiN in the third layer 121cx The molar ratio of N / Ti in the second layer 121b may be in the range of about 0.2 to about 0.5. x When the N / Ti molar ratio in the third layer 121c has a relatively low value (e.g., close to or about 0.8) and the thickness of the second layer 121b has a relatively low value within the above value range (e.g., close to or about 50 angstroms), the metal TiN in the third layer 121c x The molar ratio of N / Ti in the third layer 121c may be in the range of about 0.5 to about 0.75 so that the resistance of the gate line 121 does not increase after annealing. In the third layer 121c, the content of titanium may be greater than the content of nitrogen, and in this case the metal TiN x Can show more metallic properties.

[0077] Formation of TiN using a Ti target in a sputtering process for forming wiring x Layer. N is an inert gas N 2 In other words, the Ti atoms protruding from the Ti target are combined with the N 2 Collision and TiN x By supplying a larger N 2 flow rate, can be in TiN x A higher N content is obtained. 2 When supplied into the chamber, as the cumulative number of manufacturing steps of the wiring increases, the number of particles in the chamber increases, which may cause malfunctions.

[0078] Figure 8 is a graph showing the number of particles in the chamber as the cumulative number increases. Figure 8 , it can be confirmed that when the cumulative number exceeds 20, the number of particles increases sharply. Fig. 9 The failures caused by these particles are shown. Fig. 9 As shown, it can be confirmed that when more than a certain number of particles are present therein, defects of various shapes are observed due to the particles.

[0079] refer to Figure 8 , in order to remove particles in the chamber, a Ti dummy process can be performed to deposit only Ti without implanting N. Figure 8 , it can be confirmed that the particles in the chamber are reduced after the Ti virtual process (64→13). However, in the manufacturing process, when the Ti virtual process is performed, there is a problem that the productivity decreases and the production efficiency decreases.

[0080] The gate line 121 according to the present exemplary embodiment includes a x The second layer 121b is made of metal TiN xWhen the N / Ti ratio is in the range of about 0.2 to about 0.75, when the Ti content is high, the metal TiN x It has the characteristics of metal. Therefore, the Ti virtual process of depositing only Ti can be omitted. That is, when manufacturing N-rich TiN x After the second layer 121b is deposited, the metal TiN x When the second layer 121b is formed, the particles in the chamber are removed like the Ti dummy process. In this exemplary embodiment, the N-rich TiN x Then, the third layer 121c of metal TiN is formed. x In the case of the Ti virtual process, production is stopped during the process, resulting in a decrease in productivity, however, in the case of a Ti virtual process including deposition of Ti-rich metallic TiN x In the case of a process of reducing the number of particles in the chamber, the number of particles in the chamber can be reduced without stopping production. Therefore, a decrease in productivity can be prevented.

[0081] Including metal containing TiN x The third layer 121c of the gate line 121 can prevent undercutting caused by the HF cleaning process. Fig.10 is a diagram showing a cross section of a wiring having an Al / Ti structure after an HF cleaning process. Figures 11 to 13 Each shows Al / Metal TiN after HF cleaning process x Figure 1. A cross-section diagram of a wiring structure.

[0082] Figures 11 to 13 Among them, TiN x The N content of the TiN x N supplied during the manufacturing process 2 Gas flow rate. N 2 The larger the supply flow rate, the greater the TiN x The higher the N content in the

[0083] refer to Fig.10 , if an HF cleaning process is performed on a wiring having an Al / Ti structure, undercutting caused by the cleaning solution occurs. As described above, the HF cleaning solution etches titanium. Fig.10 , the portion where undercutting occurs is indicated by a dotted line. That is, the cleaning solution penetrates the contact hole, and the cleaning solution etches the Al / Ti wiring while penetrating along the side of the contact hole. Therefore, even in the portion outside the contact hole, undercutting of the etched wiring occurs. For example, the gate line 121 according to the present exemplary embodiment does not include a layer made only of titanium, so that damage on the gate line 121 caused by the HF cleaning solution does not occur.

[0084] refer to Figures 11 to 13 , in the metal TiN x In the case of overlay wiring, it can be confirmed that no undercut is shown.

[0085] refer to Fig.11 , when N 2 When 10 sccm is flowed into the chamber, no undercutting occurs, but slight damage is caused by HF on the wiring surface. Fig.11 However, the reference Fig.12 and Fig.13 , when N 2 When 20 sccm and 30 sccm were flowed into the chamber, respectively, it was confirmed that the surface of the wiring was not damaged and no undercut occurred.

[0086] Fig.14 is shown to depend on the metal TiN x N in the chamber during the formation process 2 Gas supply flow rate TiN x The characteristics of the graph. Fig.14 The horizontal axis represents the N supplied in the chamber. 2 The supply flow rate of the gas, and the right vertical axis represents the deposited TiN x The left vertical axis represents the deposition rate and the sheet resistance Rs.

[0087] refer to Fig.14 , when N 2 When the supply flow rate of the gas is in the range of 10 sccm to 45 sccm, it can be confirmed that the N / Ti molar ratio is in the range of 0.21 to 0.76. In addition, it can be confirmed that the sheet resistance Rs exhibits a constant value when the N / Ti molar ratio is in the range of 0.21 to 0.76. Fig.14 The shaded area is the metal TiN x That is, in the region where the molar ratio of N / Ti is in the range from 0.21 to 0.76, it is Fig.14 The shaded area in the figure shows that TiN x Shows the characteristics of metal.

[0088] refer to Figures 11 to 14 , when N 2 When the flow rate into the chamber is 20sccm and 30sccm respectively, the metal TiN formed x The membrane is not damaged by the HF cleaning solution. 2 The formed metal film has a N / Ti molar ratio of 0.37, so the TiN x The second layer 121b (TiN xhaving a N / Ti molar ratio in the range from about 0.8 to about 1.2, which is higher than 0.37), will be less likely to be damaged by HF cleaning solutions.

[0089] Fig.15 The figure shows the case where only Ti (Ti) is deposited, the case where TiN is deposited x (TiN x ) and the deposition of metal TiN x (Metal TiN x ) is a graph of the cumulative number of particles for the case of . Each layer is deposited at 1000 angstroms. Fig.15 In the case of depositing only Ti, even if the cumulative number increases, it can be confirmed that the number of particles does not increase. x In the case of , it can be confirmed that the number of particles increases sharply with the increase of the cumulative number. x In the case of , it can be confirmed that even when the cumulative number increases, the number of particles does not increase sharply. x process instead of the conventional Ti dummy deposition process can hinder particles in the chamber.

[0090] The thickness of the third layer 121c may be in the range of about 200 angstroms to about 1200 angstroms. If the thickness of the third layer 121c is less than about 200 angstroms, the second layer 121b and the first layer 121a below may not be sufficiently protected from the HF cleaning solution. If the thickness of the third layer 121c is greater than about 1200 angstroms, productivity is reduced.

[0091] Fig.16 It is shown that by x (TN) / Metal TiN x This is a graph showing the results of measuring the sheet resistance Rs by differentiating the thickness of each layer and the N content in the wiring of the (mTN) structure. Fig.16 The number after TN stands for TiN. x Layer thickness And the number after mTN indicates N 2 Supply flow rate (sccm).

[0092] refer to Fig.16 , when the metal TiN is deposited as the third layer 121c x Time N 2 When the supply flow rate of is 10 sccm, it can be confirmed that the sheet resistance Rs increases after annealing. x Time N 2When the supply flow rate is greater than 30 sccm, it can be confirmed that the sheet resistance Rs does not increase after annealing regardless of the thickness of the second layer 121b. Fig.14 When depositing TiN metal x Time N 2 When the supply flow rate is 30 sccm, the metal TiN as the third layer 121c x The N / Ti molar ratio is 0.6. For example, in the exemplary embodiment of the present disclosure, when the metal TiN as the third layer 121c x When the N / Ti molar ratio is 0.6 or more, it can be confirmed that when the thickness of the second layer 121 b is 50 angstroms or more, the sheet resistance Rs does not increase after annealing.

[0093] Fig.17 is a graph showing the sheet resistance Rs depending on the number of cleaning times in a wiring having an Al / TiN structure and a wiring having an Al / Ti structure. Fig.17 The number after TiN indicates the thickness. refer to Fig.17 , compared with the Al / Ti structure, the sheet resistance Rs does not change even if the cleaning process is repeated for the Al / TiN structure. Fig.17 As shown, the Al / TiN structure is subjected to buffered oxide etching (BOE) three times with an HF solution, and for the Al / TiN structure having TiN thicknesses of 50 angstroms, 100 angstroms, and 300 angstroms, respectively, the sheet resistance Rs does not change after each BOE. As described above, titanium nitride is stable in an HF solution. That is, it can be confirmed that damage to the wiring due to the cleaning process can be prevented. However, with repeated cleaning processes, the sheet resistance Rs increases significantly for the Al / Ti structure.

[0094] As described above, the gate line 121 of the display device according to the present exemplary embodiment includes: a first layer 121a including aluminum or an aluminum alloy, a TiN layer including N-rich x The second layer 121b and the TiN containing Ti-rich metal x The third layer 121c is formed by the first layer 121a including aluminum or aluminum alloy to reduce the resistance of the gate line 121, so that when the aluminum alloy is used, the scanning delay can be prevented and the hillock generation can be prevented. In addition, the first layer 121a including N-rich TiN can be used to reduce the resistance of the gate line 121. x The second layer 121b can prevent the generation of aluminum hillocks, and can prevent the increase of resistance by minimizing the diffusion of aluminum and titanium in the boundary surface of the first layer 121a and the second layer 121b. In addition, the first layer 121a can be prevented from being damaged by the cleaning solution. In addition, the TiN containing Ti-rich metal xThe third layer 121c can prevent undercutting caused by the cleaning solution from occurring, and even if the accumulation number increases during the wiring deposition process, particles within the chamber do not increase, and thus, malfunctions due to particles can be prevented.

[0095] Next, the gate line 121 according to an exemplary embodiment of the present disclosure is described. Fig.18 is a diagram showing a gate line 121 according to an exemplary embodiment of the present disclosure. Fig.18 According to the present exemplary embodiment, the gate line 121 includes a first layer 121a including aluminum or an aluminum alloy and a TiN layer including a Ti-rich metal. x That is, except for omitting the second layer 121b, according to Fig.18 The gate line 121 of the exemplary embodiment is connected with the gate line 121 according to Figure 1 The gate lines 121 of the exemplary embodiments of FIG. 1 and FIG. 2 are substantially the same. Detailed description of the same constituent elements is omitted, and the same Figure 1 Description.

[0096] In the first layer 121a of the present exemplary embodiment, the aluminum alloy may contain at least one of Ni, La, Nd, and Ge in the aluminum. However, the content of the material other than aluminum in the aluminum alloy may be about 1 mol % or less. Furthermore, the third layer 121c may contain metal TiN x , wherein the molar ratio of N / Ti is in the range of about 0.2 to about 0.75, and the thickness thereof may be in the range of about 200 angstroms to about 1200 angstroms. Even if the second layer 121b is not included, hillock formation may be prevented by the third layer 121c, and damage and undercutting caused by a cleaning solution may be prevented. Figure 1 Compared with the exemplary embodiment of FIG. 1 , in the present exemplary embodiment, since the second layer 121 b is not included, the manufacturing process can be simplified and the number of particles in the chamber can be further reduced during manufacturing. Therefore, defects due to particles can be prevented.

[0097] In the above description, it has been described that the gate line 121 is made of Al / N-rich TiN x / Ti-rich metallic TiN x Three-layer structure or Al / Ti-rich metallic TiN x For example, a three-layer structure or a two-layer structure may be applied to the data line 171.

[0098] Fig.19 is a diagram showing a data line 171 of a display device according to an exemplary embodiment of the present disclosure. Fig.19 The data line 171 includes a first layer 171a including aluminum or an aluminum alloy, a TiN layer including N-rich xThe second layer 171b and the TiN containing Ti-rich metal x The third layer 171c.

[0099] Fig. 20 is a diagram showing a data line 171 of a display device according to an exemplary embodiment of the present disclosure. Fig. 20 The data line 171 includes a first layer 171a including aluminum or an aluminum alloy and a metal TiN layer including Ti-rich x The third layer 171c.

[0100] exist Fig.19 and Fig. 20 , the first layer 171a, the second layer 171b and the third layer 171c of the data line 171 are described with reference to FIG. Figure 1 The description of the first layer 121a, the second layer 121b, and the third layer 121c of the gate line 121 in the same manner. Detailed description of the same contents is omitted. That is, the first layer 171a of the data line 171 may include aluminum or an aluminum alloy. The aluminum alloy may include at least one of Ni, La, Nd, and Ge in the aluminum, and the content of the material other than aluminum in the aluminum alloy may be about 1 mol % or less. The second layer 171b includes TiN in which the molar ratio of N / Ti is in the range of about 0.8 to about 1.2. x , and the thickness of the second layer 171b may be in the range from about 50 angstroms to about 400 angstroms. That is, the TiN of the second layer 171b x The second layer 171b has a N-rich characteristic because it may contain more N than Ti. For example, the N-rich TiN in the second layer 171b x The molar ratio of N / Ti in the second layer 171b may be greater than 1. For example, the N-rich TiN x The molar ratio of N / Ti may be in the range of about 1 to about 1.2. The third layer 171c includes metal TiN x , wherein the molar ratio of N / Ti is in the range of from about 0.2 to about 0.75, and the thickness thereof can be in the range of from about to about within the range.

[0101] have Fig.19 or Fig. 20 The effect of the data line 171 having the structure of the first layer 171a is the same as above. That is, the resistance of the data line 171 can be reduced by the first layer 171a including aluminum or aluminum alloy, thereby preventing signal delay. In addition, the first layer 171a including N-rich TiN can be used to reduce the resistance of the data line 171, thereby preventing signal delay. x The second layer 171b can prevent the generation of aluminum hillocks, and can prevent diffusion in the boundary surface of the first layer 171a and the second layer 171b and the increase in resistance due to diffusion. In addition, the TiN containing a Ti-rich metal can be used. xThe third layer 171c is formed to prevent the generation of undercut due to the cleaning solution, and even if the accumulation number increases in the wiring deposition process, the particles in the chamber do not increase, so that malfunctions due to particles can be prevented.

[0102] The data line 171 according to the present exemplary embodiment does not include a layer made of only titanium, so that damage to the data line 171 caused by the HF cleaning solution does not occur.

[0103] Next, a method of manufacturing a display device including the gate line 121 according to an exemplary embodiment of the present disclosure is described.

[0104] The manufacturing method of the display device including the gate line 121 according to the present exemplary embodiment includes the steps of forming a first layer 121a including aluminum or an aluminum alloy, supplying N in a chamber, 2 At the same time, by using a Ti target to form a TiN x The second layer 121b step, and the N 2 The TiN target is supplied into the chamber and forms a TiN x In the step of forming the second layer 121b, N 2 The supply flow rate of may be about 60 sccm or more. In addition, in the step of forming the third layer 121c, N 2 The supply flow rate of may be in a range from about 10 sccm to about 45 sccm.

[0105] In the step of forming the second layer 121b, N-rich TiN in which a molar ratio of N / Ti is in a range from about 0.8 to about 1.2 may be formed. x In the step of forming the third layer 121c, a Ti-rich metallic TiN in which a molar ratio of N / Ti is in a range from about 0.2 to about 0.75 may be formed. x However, the present disclosure is not limited thereto. For example, the TiN of the second layer 121b x The second layer 121b may have a N-rich feature because it may contain more N than Ti, and the N-rich TiN in the second layer 121b may contain more N than Ti. x The molar ratio of N / Ti in the second layer 121b may be greater than 1. For example, the N-rich TiN x The molar ratio of N / Ti may be in the range of from about 1 to about 1.2.

[0106] In this exemplary embodiment, N-rich TiN is formed by a continuous process. x TiN x In the formation of N-rich TiN x During the layer process, a large number of N 2gas flows into the chamber, and due to the N 2 Gas, the number of particles in the chamber may increase. However, in the manufacturing method of the gate line 121 according to the present exemplary embodiment, due to the Ti-rich metal TiN x The Ti layer is formed later, so the number of particles in the chamber can be reduced in this process. Therefore, since a separate Ti-dummy deposition process for reducing the number of particles is not required, wiring defects due to particles can be prevented and productivity can be improved.

[0107] The method for manufacturing a display device including the gate line 121 according to the present exemplary embodiment may further include the step of annealing the gate line 121 at a temperature ranging from about 400° C. to about 580° C. By forming the second layer 121 b, i.e., the N-rich TiN having a molar ratio of N / Ti ranging from about 0.8 to about 1.2, on the first layer 121 a including aluminum or an aluminum alloy x layer, the hillock formation may be prevented, and the resistance of the gate line 121 may not be increased.

[0108] The method for manufacturing a display device including the gate line 121 according to the present exemplary embodiment may further include the step of performing an HF cleaning process on the gate line 121. By forming the second layer 121b on the first layer 121a including aluminum or an aluminum alloy, that is, a N-rich TiN having a molar ratio of N / Ti in a range from about 0.8 to about 1.2 x A third layer 121c, i.e., a Ti-rich metallic TiN having a N / Ti molar ratio ranging from about 0.2 to about 0.75, is formed on the second layer 121b. x layer, which can prevent the generation of undercuts caused by HF cleaning solutions.

[0109] Next, the detailed structure of the display device to which the gate line 121 or the data line 171 according to the exemplary embodiment of the present disclosure is applied is described in detail with reference to the accompanying drawings. However, the following structure is only an example, the present disclosure is not limited thereto, and the present disclosure can be applied to any emissive display device including the gate line 121 and the data line 171 without limitation.

[0110] Fig.21 is a top view schematically showing a display device according to an exemplary embodiment of the present disclosure. Fig. 22 is along Fig.21 A cross-sectional view taken along line XXII-XXII'.

[0111] In the figure, an active matrix (AM) type emissive display device of a 2 transistor-1 capacitor (2Tr-1Cap) structure is shown, in which each pixel of the display area includes two thin film transistors (TFT) T1 and T2 and a capacitor element C1, but the present disclosure is not limited to this.

[0112] An emissive display device may have three or more transistors and two or more capacitive elements in one pixel, and may form additional wiring to have various structures. Here, a pixel is the minimum unit for displaying an image, and a display area displays an image through a plurality of pixels.

[0113] refer to Fig.21 and Fig. 22 , the emission display device according to the present exemplary embodiment includes a switching thin film transistor T1, a driving thin film transistor T2, a capacitor C1, and a light emitting element E1 such as an organic light emitting element, which are respectively formed in a plurality of pixels disposed on a substrate 110. A gate line 121 disposed in one direction and a data line 171 and a common power line 172 insulated from and crossing the gate line 121 are disposed on the substrate 110. Here, each pixel may be defined by the gate line 121, the data line 171, and the common power line 172 as boundaries, but the present disclosure is not limited thereto.

[0114] The organic light emitting element E1 includes a first electrode 191 , a light emitting element layer 370 formed on the first electrode 191 , and a second electrode 270 formed on the light emitting element layer 370 .

[0115] Here, the first electrode 191 becomes an anode as a hole injection electrode, and the second electrode 270 becomes a cathode as an electron injection electrode. However, the present disclosure is not limited thereto, and according to a driving method of an emission display device, the first electrode 191 may be a cathode, and the second electrode 270 may be an anode. The first electrode 191 may be a pixel electrode, and the second electrode 270 may be a common electrode.

[0116] The light emitting element layer 370 may include at least one of a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and an electron injection layer. The emission layer may include an organic emission layer, the injected holes and electrons are combined with each other to form excitons, and when the excitons drop from an excited state to a ground state, light emission occurs. Moreover, the emission layer may include quantum dots.

[0117] The capacitor element C1 includes a pair of capacitor plates 158 and 178, which are provided with an interlayer insulating layer 160 therebetween. Here, the interlayer insulating layer 160 is a dielectric material. The capacitance is determined by the charge charged in the capacitor element C1 and the voltage difference between the pair of capacitor plates 158 and 178.

[0118] The switching thin film transistor T1 includes a switching semiconductor layer 151 , a switching gate electrode 122 , a switching source electrode 176 , and a switching drain electrode 177 . The driving thin film transistor T2 includes a driving semiconductor layer 155 , a driving gate electrode 124 , a driving source electrode 173 , and a driving drain electrode 175 .

[0119] The switching thin film transistor T1 is used as a switching element for turning on the pixel to emit light. The switching gate electrode 122 is connected to the gate line 121, and the switching source electrode 176 is connected to the data line 171. The switching drain electrode 177 is disposed to be separated from the switching source electrode 176 and connected to one capacitor plate 158.

[0120] The driving thin film transistor T2 applies driving power to the first electrode 191 to make the light emitting element layer 370 of the organic light emitting element E1 in the switched pixel emit light. The driving gate electrode 124 is connected to the capacitor plate 158, and the capacitor plate 158 is connected to the switch drain electrode 177. The driving source electrode 173 and the other capacitor plate 178 are connected to the common power line 172.

[0121] The driving drain electrode 175 is connected to the pixel electrode 191 through the contact hole 185 .

[0122] refer to Fig.21 and Fig. 22 An organic light emitting device according to an exemplary embodiment of the present disclosure is described in more detail.

[0123] The buffer layer 111 is disposed on the substrate 110. The substrate 110 may be made of, for example, glass, quartz, ceramic, plastic, etc. The buffer layer 111 may be made of, for example, silicon nitride (SiN x ), silicon oxide (SiO 2 ), silicon oxynitride (SiO x N y ) etc., but the present disclosure is not limited thereto. x and y may be 1 to 5, respectively.

[0124] The driving semiconductor layer 155 is formed on the buffer layer 111 . The driving semiconductor layer 155 may be made of various semiconductor materials such as, for example, a polysilicon layer and an amorphous silicon layer. The driving semiconductor layer 155 may include a source region 152 , a channel region 153 , and a drain region 154 .

[0125] The gate insulating layer 140 made of, for example, silicon nitride or silicon oxide is located on the driving semiconductor layer 155. The driving gate electrode 124 and the first capacitor plate 158 are disposed on the gate insulating layer 140. In this case, the driving gate electrode 124 is positioned to overlap at least a portion of the driving semiconductor layer 155, specifically, the channel region 153.

[0126] The driving gate electrode 124 is disposed on the same layer as the gate line 121 and includes the same material as the gate line 121. The structure of the gate line 121 is as described above. Detailed description of the same constituent elements is omitted. Figure 1 As shown, the gate line 121 may include a first layer 121a including aluminum or an aluminum alloy, a first layer 121a including a N-rich TiNx The second layer 121b and the TiN containing Ti-rich metal x The third layer 121c includes N-rich TiN x The molar ratio of N / Ti of the second layer 121b may be in the range of about 0.8 to about 1.2. The TiN-containing metallic x The molar ratio of N / Ti of the third layer 121c may be in the range of about 0.2 to about 0.75. Fig.18 As shown, the gate line 121 may include a first layer 121a including aluminum or an aluminum alloy and a metal TiN layer including a Ti-rich x The third layer 121c.

[0127] An interlayer insulating layer 160 covering the driving gate electrode 124 is disposed on the gate insulating layer 140. The interlayer insulating layer 160 may be formed of, for example, silicon nitride or silicon oxide, similar to the gate insulating layer 140. The gate insulating layer 140 and the interlayer insulating layer 160 have a first contact hole 163 and a second contact hole 165 exposing the source region 152 and the drain region 154 of the driving semiconductor layer 155.

[0128] The driving source electrode 173, the driving drain electrode 175, the data line 171, the common power line 172 and the second capacitor plate 178 are disposed on the interlayer insulating layer 160. The driving source electrode 173 and the driving drain electrode 175 are connected to the source region 152 and the drain region 154 of the driving semiconductor layer 155 through the first contact hole 163 and the second contact hole 165, respectively. The driving source electrode 173 and the driving drain electrode 175 are disposed on the same layer as the data line 171 and include the same material as the data line 171. The structure of the data line 171 is as described above. Detailed description of the same constituent elements is omitted. That is, as shown in FIG. Fig.19 As shown, the data line 171 may include a first layer 171a including aluminum or an aluminum alloy, a first layer 171a including a N-rich TiN x The second layer 171b and the TiN containing Ti-rich metal x The third layer 171c includes N-rich TiN x The molar ratio of N / Ti of the second layer 171b may be in the range of about 0.8 to about 1.2. The TiN-containing metallic x The molar ratio of N / Ti of the third layer 171c may be in the range of about 0.2 to about 0.75. Fig. 20 As shown, the data line 171 may include a first layer 171a including aluminum or an aluminum alloy, and a metal TiN layer including a Ti-rich x The third layer 171c.

[0129] An insulating layer 180 covering the driving source electrode 173 and the driving drain electrode 175 is disposed on the interlayer insulating layer 160. The insulating layer 180 may include an organic material such as, for example, an acrylic-based polymer or an imide-based polymer.

[0130] The insulating layer 180 has a contact hole 185 . The first electrode 191 is disposed on the insulating layer 180 . The first electrode 191 may be a pixel electrode. The first electrode 191 is connected to the driving drain electrode 175 through the contact hole 185 .

[0131] The separator 380 is disposed on the insulating layer 180. The light emitting element layer 370 is disposed to overlap with the first electrode 191, and the second electrode 270 is disposed to overlap with the light emitting element layer 370. The light emitting element layer 370 may include at least one of a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and an electron injection layer. The second electrode 270 may be a common electrode. The light emitting element E1 may include the first electrode 191, the light emitting element layer 370, and the second electrode 270.

[0132] Although the present disclosure has been described in conjunction with what are currently considered to be practical exemplary embodiments, it should be understood that the present disclosure is not limited to the disclosed exemplary embodiments. On the contrary, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the present disclosure as defined by the appended claims.

Claims

1. A display device, comprising: substrate; A gate line disposed on the substrate; a transistor including a portion of the gate line; as well as a light emitting element connected to the transistor, Wherein, the gate line comprises: a first layer comprising an aluminum alloy; a second layer comprising titanium nitride; and a third layer comprising metallic titanium nitride, wherein the N / Ti molar ratio of the metal titanium nitride is in the range of from 0.2 to 0.75, The third layer is in direct contact with the second layer, The second layer is between the first layer and the third layer, In the second layer, the nitrogen content is higher than the titanium content, In the third layer, the content of titanium is higher than the content of nitrogen, The first layer is closer to the substrate than the third layer, and The aluminum alloy of the first layer is not in direct contact with the metal titanium nitride of the third layer to prevent an increase in electrical resistance by minimizing diffusion of titanium into the aluminum alloy of the first layer.

2. The display device according to claim 1, wherein: The N / Ti molar ratio of the titanium nitride of the second layer is in the range from 0.8 to 1.

2.

3. The display device according to claim 1, wherein: The aluminum alloy of the first layer includes at least one of Ni, La, Nd, and Ge.

4. The display device according to claim 3, wherein: The content of materials other than aluminum in the aluminum alloy is 1 mol % or less.

5. The display device according to claim 1, wherein: The thickness of the second layer ranges from 50 angstroms to 400 angstroms.

6. The display device according to claim 1, wherein: The thickness of the third layer ranges from 200 angstroms to 1200 angstroms.

7. The display device according to claim 1, wherein: The content of titanium included in the third layer is greater than the content of titanium included in the second layer.

8. The display device according to claim 1, wherein: The gate line does not include a layer made of only titanium.

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