Display device

Abstract

One embodiment of the present invention provides a display device, comprising: a substrate, including a main display area having a main pixel and a sensor area having an auxiliary pixel and a transparent portion; and a component, which sends a specified signal to the outside of the substrate through the transparent portion, and the auxiliary cathode layer of the auxiliary pixel has a first overlapping portion and is configured not to cover the transparent portion.

Description

Technical Field

[0001] An embodiment of the present invention relates to a display device. Background Art

[0002] In recent years, the use of display devices has increased, and the display devices have become thinner and lighter, so that the range of their use has become wider and wider.

[0003] As display devices are widely used, there are various ways to design the shape of the display devices, and the functions that can be embedded in the display devices or linked with the display devices are also increasing. Summary of the invention

[0004] An embodiment of the present invention may provide a display device having a sensor region in which a component such as a sensor may be arranged in the display region. In particular, a display device may be provided that improves the transmittance in a transparent portion through which a signal of a component passes. However, the above technical problem is exemplary, and the scope of the present invention is not limited thereto.

[0005] An embodiment of the present invention provides a display device, comprising: a substrate, comprising a main display area having main pixels and a sensor area having auxiliary pixels and a transparent portion; and a component, which sends a specified signal to the outside of the substrate through the above-mentioned transparent portion, and the above-mentioned auxiliary pixels have auxiliary light-emitting elements including an auxiliary cathode layer, and the above-mentioned auxiliary cathode layer has a first overlapping portion on one side in which multiple layers overlap, and the auxiliary cathode layer is configured not to cover the above-mentioned transparent portion.

[0006] The above-mentioned auxiliary cathode layer may include: a first auxiliary cathode layer formed in the first auxiliary pixel area in the above-mentioned sensor area; and a second auxiliary cathode layer formed in the second auxiliary pixel area separated from the above-mentioned first auxiliary pixel area. The above-mentioned first auxiliary cathode layer may form the above-mentioned first overlapping portion with the above-mentioned second auxiliary cathode layer at adjacent boundaries and be connected together.

[0007] The transmission portion may be disposed between the first auxiliary cathode layer and the second auxiliary cathode layer.

[0008] The first auxiliary cathode layer and the second auxiliary cathode layer may have a quadrilateral shape in a plan view, and each corner of the quadrilateral shape may serve as the first overlapping portion.

[0009] The first auxiliary cathode layer and the second auxiliary cathode layer may have a hexagonal shape in a plan view, and a pair of mutually opposing corners of the hexagonal shape may serve as the first overlapping portion.

[0010] The first auxiliary cathode layer and the second auxiliary cathode layer may have a rhombus shape in a plan view, and a pair of mutually opposing sides of the rhombus shape may serve as the first overlapping portion.

[0011] The main pixel includes a main light emitting element including a main cathode layer, and the auxiliary cathode layer may overlap with the main cathode layer at a boundary adjacent to each other to form a second overlapping portion and be connected together.

[0012] The main cathode layer may cover the entire main display area.

[0013] A contact portion for connecting the auxiliary cathode layer to a cathode voltage supply wiring may be further provided.

[0014] The contact portion may be provided in the sensor region.

[0015] Other aspects, features and advantages besides the above will become more apparent from the following drawings, claims and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a perspective view schematically showing a display device according to an embodiment of the present invention.

[0017] Figure 2 It is along Figure 1 Cross-sectional views taken along line A-A' and line B-B'.

[0018] Figure 3 is a perspective view showing a first mask and a second mask, wherein the first mask and the second mask are used to manufacture Figure 1 The display device includes a cathode layer.

[0019] Figure 4A It is shown Figure 3 A top view showing the configuration relationship between the first and second masks and the cathode layer.

[0020] Figure 4B It is along Figure 4A Cross-sectional view taken along line C-C'.

[0021] Figure 4C It is along Figure 4A Cross-sectional view taken along line D-D'.

[0022] Figure 5 as well as Figure 6 It is shown Figure 4A A top view of a deformable example of the arrangement relationship between the first and second masks and the cathode layer is shown. DETAILED DESCRIPTION

[0023] The present invention can be subjected to various changes and can have various embodiments. Below, specific embodiments are shown in the drawings and described in detail in the specific embodiments. The effects and features of the present invention and the methods for achieving the above effects and features will become more clear with reference to the following embodiments described in detail in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below and can be implemented in various ways.

[0024] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the accompanying drawings, the same symbols are given to the same or corresponding components, and repeated description is omitted.

[0025] In the following embodiments, a term indicating a singular term includes a meaning indicating a plural term unless the context clearly indicates otherwise.

[0026] In the following embodiments, the terms including or having mean the presence of the features or constituent elements described in the specification, but do not preclude the possibility that there are one or more other features or constituent elements.

[0027] In the drawings, the size of the constituent elements may be enlarged or reduced for the convenience of description. For example, the size and thickness of each structure appearing in the drawings are arbitrarily shown for the convenience of description, and therefore, the present invention is not necessarily limited to the situation shown in the drawings.

[0028] In the case where an embodiment can be implemented in different ways, a specific sequence of steps can be performed in a different order than the order described. For example, for two steps described in succession, the two steps can be performed substantially simultaneously, or the two steps can be performed in an order opposite to the order described.

[0029] Figure 1 FIG. 1 is a perspective view schematically showing a display device 1 according to an embodiment of the present invention.

[0030] As shown in the figure, the display area DA of the display device 1 includes a main display area MDA and a sensor area SA. In the main display area MDA, a main image is provided by using light emitted from a plurality of main pixels Pm. In addition, the sensor area SA is a component 300 (see FIG. 1 ) such as a sensor that uses an optical signal or an acoustic signal, which is arranged at its lower part. Figure 2) area, has a transmission portion TA, and an optical signal and / or an audio signal output from the component 300 to the outside of the substrate 100 or transmitted from the outside to the component 300 can pass through the transmission portion TA. In addition, a plurality of auxiliary pixels Pa are arranged in the sensor area SA, and an image is also provided using light emitted from the auxiliary pixels Pa. That is, images are displayed not only in the main display area MDA, but also in the sensor area SA using the auxiliary pixels Pa. However, since the transmission portion TA is arranged in the sensor area SA, the resolution may be lower than that of the image provided in the main display area MDA. In other words, due to the transmission portion TA, the number of auxiliary pixels Pa that can be arranged per unit area may be less than the number of main pixels Pm.

[0031] In the following, as a display device 1 according to an embodiment of the present invention, an organic light emitting display device is used as an example for description, but the display device of the present invention is not limited thereto. As another embodiment, a display device of various types such as an inorganic EL display device (Inorganic Light Emitting Display) and a quantum dot light emitting display device (Quantum dot Light Emitting Display) can be used.

[0032] Figure 2 It is along Figure 1 The cross-sectional view is a cross-sectional view cut along the A-A' line and the BB' line of the sensor area SA. That is, the cross-sectional structure of the auxiliary pixel Pa, the transmission portion TA, and the main pixel Pm of the main display area MDA is briefly shown. The main pixel Pm and the auxiliary pixel Pa have an organic light-emitting element OLED and a thin-film transistor TFT of basically the same structure. As described above, it can be considered that the difference between the two is only the number of configurations per unit area. For the sake of convenience, the organic light-emitting element OLED of the main pixel Pm is called the main light-emitting element, and the organic light-emitting element OLED of the auxiliary pixel Pa is called the auxiliary light-emitting element.

[0033] First, the display device 1 includes: a substrate 100 including a main display area MDA and a sensor area SA; and a component 300 disposed below the substrate 100 corresponding to the sensor area SA.

[0034] The above-mentioned component 300 can be an electronic component that utilizes light or sound. For example, the component 300 can be a sensor that receives and utilizes light, such as an infrared sensor, a sensor that outputs and detects light or sound to measure distance or recognize fingerprints, a small lamp that outputs light, or a speaker that outputs sound. In the case of an electronic component that utilizes light, of course, light of various wavelengths such as visible light, infrared light, and ultraviolet light can be utilized. The number of components 300 configured in the sensor area SA can be multiple. For example, as a component 300, a light-emitting element and a light-receiving element can be included together in one sensor area SA. Alternatively, one component 300 can have both a light-emitting portion and a light-receiving portion.

[0035] Next, starting from the substrate 100, the material of the substrate 100 may include glass or polymer resin. The polymer resin may include polyethersulfone (PES), polyacrylate (polyacrylate), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate (PAR), polyimide (PI), polycarbonate (PC) or cellulose acetate propionate (CAP). The substrate 100 including the polymer resin may have the characteristics of flexibility, rollability or bendability. The substrate 100 may be a multilayer structure, and the multilayer structure includes: a layer including the above-mentioned polymer resin and an inorganic layer (not shown).

[0036] The buffer layer 111 on the substrate 100 can reduce or block the penetration of foreign matter, moisture or external gas from the lower part of the substrate 100, and can provide a flat surface on the substrate 100. The buffer layer 111 may include inorganic substances such as oxides or nitrides, or organic substances, or a composite of organic and inorganic substances, and may be formed by a single layer or multilayer structure of inorganic and organic substances. Between the substrate 100 and the buffer layer 111, a barrier layer (not shown) that blocks the penetration of external gas may also be included. As shown in the figure, the buffer layer 111 may be formed by a stacked structure of a first buffer layer 111a and a second buffer layer 111b.

[0037] The semiconductor layer 1130 is disposed on the buffer layer 111, and a gate electrode G is disposed on the semiconductor layer 1130, and a first gate insulating layer 112 is present between the semiconductor layer 1130 and the gate electrode G. The gate electrode G includes molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be composed of a single layer or multiple layers. As an example, the gate electrode G may be a single layer of Mo.

[0038] The first gate insulating layer 112 may include silicon oxide (SiO 2 ), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO 2 )wait.

[0039] A second gate insulating layer 113 may be provided to cover the gate electrode G. The second gate insulating layer 113 may include silicon oxide (SiO 2 ), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO 2 )wait.

[0040] A source electrode S and a drain electrode D may be disposed on the interlayer insulating layer 115. The source electrode S and the drain electrode D may include a conductive material, such as molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and the source electrode S and the drain electrode D may be formed as a multilayer or a single layer including the above materials.

[0041] The drain electrode D is connected to the anode electrode layer 210 of the organic light emitting element OLED.

[0042] There may be a planarization layer 117 on the source electrode S and the drain electrode D, and there may be an organic light emitting element OLED on the planarization layer 117 .

[0043] The planarization layer 117 may have a flat upper surface so that the anode electrode layer 210 may be formed flatly. The planarization layer 117 may be formed as a single layer or multiple layers by a film, and the film is formed by an organic substance. The planarization layer 117 as described above may include: polymer derivatives with common general polymers, phenolic groups, acrylic polymers, imide polymers, aromatic ether polymers, amide polymers, fluorine polymers, p-xylene polymers, vinyl alcohol polymers and mixtures thereof, such as BCB (Benzocyclobutene), polyimide, HMDSO (Hexamethyldisiloxane), PMMA (Polymethylmethacrylate) or PS (Polystylene). The planarization layer 117 may include an inorganic substance. The planarization layer 117 as described above may include silicon oxide (SiO 2 ), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO 2 ) etc. When the planarization layer 117 includes an inorganic substance, chemical planarization polishing is performed according to different situations. On the other hand, the planarization layer 117 may also include both organic and inorganic substances.

[0044] The anode layer 210 may be a (semi) light-transmitting electrode or a reflective electrode. In some embodiments, the anode layer 210 may include: a reflective film formed of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) and compounds thereof; and a transparent or semi-transparent electrode layer formed on the reflective film. The transparent or semi-transparent electrode layer may include: a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3In some embodiments, the anode layer 210 may have a structure of ITO / Ag / ITO.

[0045] A pixel definition film 119 may be disposed on the planarization layer 117 and may be formed by spin coating an organic insulating material such as polyimide, polyamide, acrylic resin, benzocyclobutene, HMDSO (hexamethyldisiloxane) and phenol resin.

[0046] The intermediate layer 220 of the organic light emitting element OLED may include an organic light emitting layer. The organic light emitting layer may include an organic substance including a fluorescent or phosphorescent substance that emits red, green, blue or white light. The organic light emitting layer may be a low molecular organic substance or a high molecular organic substance, and functional layers such as a hole transport layer (HTL, hole transport layer), a hole injection layer (HIL, hole injection layer), an electron transport layer (ETL, electron transport layer) and an electron injection layer (EIL, electron injection layer) may be further selectively configured on the lower side and upper side of the organic light emitting layer. The intermediate layer 220 may be configured corresponding to each of the multiple anode electrode layers 210. However, it is not limited thereto. The intermediate layer 220 may have a variety of deformations, such as a layer that may be formed as a whole across multiple anode electrode layers 210.

[0047] The cathode layer 230 may be a light-transmitting electrode or a reflective electrode. In some embodiments, the cathode layer 230 may be a transparent or semi-transparent electrode, and may be formed of a metal film having a small work function including Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and compounds thereof. The cathode layer 230 is configured across the main display area MDA and the sensor area SA, and may be configured on the upper portion of the intermediate layer 220 and the pixel definition film 119.

[0048] However, the cathode layer 230 is not formed in the transmissive portion TA. That is, as described above, the transmissive portion TA is a region through which the optical signal and / or the acoustic signal emitted from the component 300 passes. Therefore, if it is blocked by the cathode layer 230, the transmittance will inevitably decrease, which may become a factor that hinders precise signal transmission. Therefore, in order to prevent the above situation, the cathode layer 230 is not formed in the transmissive portion TA. According to experiments, compared with the case where the cathode layer 230 is formed in the transmissive portion TA, the case where the cathode layer 230 is not formed in the transmissive portion TA shows that the transmittance is improved by more than 1.5 times. The manufacturing process of the cathode layer 230 of this specific structure is described in detail below.

[0049] In addition, a blocking layer BSM is disposed between the substrate 100 and the semiconductor layer 1130 of the auxiliary pixel Pa, which has the function of shielding the thin film transistor TFT from being affected by the optical signal or the acoustic signal of the component 300 adjacent to the blocking layer BSM.

[0050] Symbol LDH represents a laser drill hole formed in the sensor area SA by laser drilling, and a connection portion CT connecting the cathode layer 230 of the sensor area SA and the cathode voltage supply wiring ELVSS is formed through the laser hole LDH. Of course, the cathode layer 230 of the main display area MDA is also connected to the cathode voltage supply wiring ELVSS through a similar structure, and it is shown here that the connection portion CT between the cathode layer 230 and the cathode voltage supply wiring ELVSS can also be formed in the sensor area SA in the same way as in the main display area MDA.

[0051] On the other hand, although not shown in the figure, a thin film encapsulation layer in which at least one inorganic encapsulation layer and at least one organic encapsulation layer are stacked may be formed on the upper side of the cathode layer 230. The inorganic encapsulation layer may include one or more inorganic insulators selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride, and the organic encapsulation layer may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylen, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), or any combination thereof.

[0052] Next, the manufacturing process for forming the cathode layer 230 of the present embodiment and the result thereof will be described in detail.

[0053] Figure 3The first mask 10 and the second mask 20 for forming the cathode layer 230 of the main display area MDA and the sensor area SA are shown, wherein the first mask 10 is formed with first pattern holes 11 and third pattern holes 12 , and the second mask 20 is formed with second pattern holes 21 .

[0054] The first mask 10 is formed with a third pattern hole 12 and a first pattern hole 11, wherein the third pattern hole 12 is used to form a main cathode layer 230c formed in the entire main display area MDA (refer to Figure 4A ), the first pattern holes 11 are used to form a first auxiliary cathode layer 230a as a part of the auxiliary cathode layer in the sensor area SA (refer to Figure 4A ).

[0055] In addition, the second mask 20 is formed with a second pattern hole 21 for forming a second auxiliary cathode layer 230b (see FIG. 1 ) as a part of the auxiliary cathode layer in the sensor area SA. Figure 4A ).

[0056] The above-mentioned first auxiliary cathode layer 230a, the second auxiliary cathode layer 230b and the main cathode layer 230c finally become the cathode layer 230 that is connected as a whole. During manufacturing, the first auxiliary cathode layer 230a, the second auxiliary cathode layer 230b and the main cathode layer 230c are separately formed by the first mask 10 and the second mask 20, so different names and symbols are given for distinguishing explanations.

[0057] In addition, instead of stacking the first mask 10 and the second mask 20 to perform patterning at one time as shown in the figure, the first auxiliary cathode layer 230a and the main cathode layer 230c are first formed using the first pattern holes 11 and the third pattern holes 12 of the first mask 10, and then the second auxiliary cathode layer 230b is formed using the second pattern holes 21 of the second mask 20. In this way, the first auxiliary cathode layer 230a and the main cathode layer 230c, which are separated from each other, are partially overlapped by the second auxiliary cathode layer 230b, and are connected as a whole.

[0058] Reference Figure 4A Here, in order to show the connection structure of the first auxiliary cathode layer 230a, the second auxiliary cathode layer 230b and the main cathode layer 230c, the first mask 10 and the second mask 20 are overlapped, but during manufacturing, as described above, the first mask 10 and the second mask 20 are used in sequence.

[0059] like Figure 4AAs shown, a plurality of first auxiliary cathode layers 230a are formed in the first auxiliary pixel area SA1 of the sensor area SA by using the first pattern holes 11 of the first mask 10, and a main cathode layer 230c covering the entire main pixel Pm of the main display area MDA is formed by using the third pattern holes 12. At this time, each of the first auxiliary cathode layers 230a and the main cathode layer 230c is still separated from each other.

[0060] In this state, a plurality of second auxiliary cathode layers 230b are formed in the second auxiliary pixel area SA2 of the sensor area SA using the second pattern holes 21 of the second mask 20. In this way, the second auxiliary cathode layer 230b plays a role in connecting the first auxiliary cathode layer 230a and the main cathode layer 230c as a whole. That is, as shown in the figure, the first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b are formed in a quadrilateral shape when viewed from above, and the four corners overlap each other to form a first overlapping portion OL1 and are connected together. Figure 4B 2 is a diagram showing the cross-sectional structure of the first overlapping portion OL1. As shown in the figure, the second auxiliary cathode layer 230b is overlapped on the first auxiliary cathode layer 230a, thereby being configured as a plurality of layers. Through the first overlapping portion OL1, the first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b are connected as a whole.

[0061] In addition, the second auxiliary cathode layer 230b and the main cathode layer 230c also form a second overlapping portion OL2 and are connected together. Figure 4C 2 is a diagram showing the cross-sectional structure of the second overlapping portion OL2. As shown in the figure, the second auxiliary cathode layer 230b is overlapped on the main cathode layer 230c, thereby being configured as a plurality of layers. Through the second overlapping portion OL2, the main cathode layer 230c and the second auxiliary cathode layer 230b are connected as a whole.

[0062] Finally, the first auxiliary cathode layer 230a and a part of the main cathode layer 230c are overlapped by the second auxiliary cathode layer 230b and are connected as a whole. However, the cathode layer 230 connected as a whole as described above is formed by patterning using the first mask 10 and the second mask 20 instead of using one mask for patterning at one time because the cathode layer 230 is not formed in the above-mentioned transparent portion TA. As mentioned above, if the cathode layer 230 exists in the transparent portion TA, it may hinder the signal transmission of the component 300. Therefore, in order to improve the transmittance in this embodiment, the cathode layer 230 is formed avoiding the transparent portion TA. However, from Figure 4AIt can be seen that the transmission part TA is formed in a shape isolated between the first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b. Therefore, if one mask is used to cover these, the shielding part covering the position of the transmission part TA needs to float in the middle in an island shape. That is, this is an impossible situation. Therefore, in order to solve the above problem, the first auxiliary cathode layer 230a and the main cathode layer 230c are first formed using the first mask 10, and then the second auxiliary cathode layer 230b is formed using the second mask 20, so as to form a cathode layer 230 that avoids the transmission part TA and is connected as a whole.

[0063] The manufacturing process of the cathode layer 230 as described above will be briefly described again below.

[0064] First, an intermediate layer 220 and a pixel definition film 119 of the organic light-emitting element OLED are formed in the sensor area SA and the main display area MDA of the substrate 100. After the above formation is completed, the above-mentioned first mask 10 is placed on the substrate 100 to form a first auxiliary cathode layer 230a and a main cathode layer 230c.

[0065] Next, the first mask 10 is removed, and the second auxiliary cathode layer 230 b is formed using the second mask 20 , thereby completing the cathode layer 230 that avoids the transmission portion TA and is connected as one.

[0066] Therefore, according to the structure and manufacturing method described above, the cathode layer does not block the transmission portion, so the transmittance is improved, and the signal processing of the device can be performed more smoothly and accurately.

[0067] On the other hand, in the above-mentioned embodiment, the first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b are shown as quadrilateral shapes in a plan view, but they can also be configured as follows: Figure 5 That is, the first pattern holes 11a of the first mask 10 and the second pattern holes 21a of the second mask 20 are formed into a hexagonal shape to pattern the first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b.

[0068] In this case, a pair of mutually opposing corners of the hexagonal first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b are overlapped to form a first overlapping portion OL1 and connected together. In addition, one side of the second auxiliary cathode layer 230b is overlapped with the main cathode layer 230c to form a second overlapping portion OL2 and connected together. That is, even if the shape of the cathode layer 230 when viewed from above changes, a cathode layer 230 that avoids the transparent portion TA and is connected as a whole can be realized in a manner similar to the manner of manufacturing a quadrilateral cathode layer 230.

[0069] also, Figure 6The first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b are shown in a rhombus shape. That is, the first pattern holes 11b of the first mask 10 and the second pattern holes 21b of the second mask 20 are formed in a hexagonal shape to pattern the first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b.

[0070] At this time, the adjacent sides of the rhombus-shaped first auxiliary cathode layer 230a and the second auxiliary cathode layer 230b are overlapped to form a first overlapping portion OL1 and connected together. In addition, a corner of the second auxiliary cathode layer 230b is overlapped with the main cathode layer 230c to form a second overlapping portion OL2 and connected together. As described above, even if the shape of the cathode layer 230 when viewed from above changes in various ways, in a similar manner, the cathode layer 230 that avoids the transparent portion TA and is connected as a whole can be completed.

[0071] Thus, according to the above-described description and structure, an image can be displayed in the sensor area SA corresponding to the component 300, and the cathode layer 230 of the light-emitting element does not block the transmissive portion TA, so the signal processing of the component 300 based on the transmissive portion TA can be performed more smoothly and accurately. Thus, a display device 1 having multiple functions and high quality reliability can be provided.

[0072] As described above, the present invention is described with reference to an embodiment shown in the accompanying drawings, but this is only exemplary, and those skilled in the art will appreciate that various modifications and variations of the embodiments may be made on this basis. Therefore, the true technical scope to be protected by the present invention should be determined by the technical ideas of the claims.

Claims

1. A display device, comprising: A substrate including a main display area having main pixels and a sensor area having auxiliary pixels and a transparent portion; and component, sending a predetermined signal to the outside of the substrate through the transmission portion, The auxiliary pixel comprises an auxiliary light emitting element including an auxiliary cathode layer. The auxiliary cathode layer includes: a first auxiliary cathode layer formed in a first auxiliary pixel region in the sensor region; and a second auxiliary cathode layer formed in a second auxiliary pixel region separated from the first auxiliary pixel region, The first auxiliary cathode layer and the second auxiliary cathode layer partially overlap to form a first overlapping portion and are connected together, and the first auxiliary cathode layer and the second auxiliary cathode layer are arranged so as not to cover the transmission portion. The main pixel comprises a main light emitting element including a main cathode layer, The second auxiliary cathode layer partially overlaps with the main cathode layer to form a second overlapping portion and the two layers are connected together.

2. The display device according to claim 1, wherein: The transmission portion is disposed between the first auxiliary cathode layer and the second auxiliary cathode layer.

3. The display device according to claim 1, wherein: The first auxiliary cathode layer and the second auxiliary cathode layer are in a quadrilateral shape when viewed from above. Each corner of the quadrilateral serves as the first overlapping portion.

4. The display device according to claim 1, wherein: The first auxiliary cathode layer and the second auxiliary cathode layer are hexagonal in shape when viewed from above. A pair of mutually opposing corner portions of the hexagonal shape serve as the first overlapping portion.

5. The display device according to claim 1, wherein: The first auxiliary cathode layer and the second auxiliary cathode layer are in a rhombus shape when viewed from above. A pair of sides of the rhombus shape that are opposed to each other serve as the first overlapping portion.

6. The display device according to claim 1, wherein: The main cathode layer covers the entire main display area.

7. The display device according to claim 1, further comprising: The contact portion connects the auxiliary cathode layer and the cathode voltage supply wiring.

8. The display device according to claim 7, wherein: The contact portion is provided in the sensor region.

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