A high reliability LED chip and manufacturing method thereof

Abstract

The present invention discloses a highly reliable LED chip and a manufacturing method thereof. The LED chip includes a light-emitting structure and a protective layer, and the protective layer covers the epitaxial layer and the transparent conductive layer of the light-emitting structure; the protective layer includes an Al2O3 layer, a dense SiO2 layer, and a SiN x layer arranged in sequence. The dense SiO2 layer includes several periods of highly dense SiO2 layers and low-dense SiO2 layers, and the film density of the highly dense SiO2 layer is greater than that of the low-dense SiO2 layer. The protective layer of the present invention not only prevents the transparent conductive layer from reflecting and warping through the mutual cooperation of the Al2O3 layer, the dense SiO2 layer, and the SiN x layer, but also effectively protects the light-emitting structure and improves the reliability of the chip.

Description

Technical Field

[0001] The present invention relates to the technical field of light emitting diodes, and in particular to a high-reliability LED chip and a manufacturing method thereof. Background Art

[0002] In order to improve the current expansion performance of LED chips, existing LED chips generally have a transparent conductive layer on the epitaxial layer. The thermal expansion coefficient of the substrate has a great influence on the performance of the film. Since the thermal expansion coefficients of the transparent conductive layer and the epitaxial layer are inconsistent, the transparent conductive layer will produce stress and warp after the LED chip has been aged for a long time, affecting the voltage, brightness and reliability of the LED chip.

[0003] In order to improve the stability and reliability of LED chips and prevent the external environment from damaging the chips, the existing technology uses the PECVD method to deposit a layer of SiO2 film on the surface of the LED chip. However, the SiO2 film can only prevent water vapor, dust, etc. from entering the LED chip. After the LED chip has been aged / used for a long time, the SiO2 film still cannot press down the transparent conductive layer. The transparent conductive layer will warp or even fall off, resulting in an increase in voltage during the use / aging process of the LED chip. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a high-reliability LED chip, which has high reliability and can effectively prevent the transparent conductive layer from warping.

[0005] The technical problem to be solved by the present invention is to provide a method for manufacturing a high-reliability LED chip, which has high reliability and can effectively prevent the transparent conductive layer from warping.

[0006] In order to solve the above technical problems, the present invention provides a high-reliability LED chip, including a light-emitting structure and a protective layer, wherein the protective layer covers the epitaxial layer and the transparent conductive layer of the light-emitting structure;

[0007] The protective layer includes an Al2O3 layer, a dense SiO2 layer and a SiN x The dense SiO2 layer includes a plurality of periodic high-density SiO2 layers and low-density SiO2 layers, and the film density of the high-density SiO2 layer is greater than the film density of the low-density SiO2 layer.

[0008] As an improvement of the above scheme, the thickness of the high-density SiO2 layer in each cycle is The thickness of the low-density SiO2 layer is

[0009] As an improvement of the above solution, the thickness of the Al2O3 layer is The total thickness of the dense SiO2 layer is S N x The thickness of the layer is

[0010] As an improvement of the above scheme, the method for preparing the dense SiO2 layer includes:

[0011] (1) Under the conditions of temperature of 260-310°C, pressure of 80-120 Pa, and RF power of 80-140 W, introduce gas SiH4, N2, and N2O in a ratio of 1: (50-60): (70-80) to deposit and form a high-density SiO2 layer;

[0012] (2) Under the conditions of temperature of 260-310°C, pressure of 120-160 Pa, and RF power of 120-140 W, introduce gases SiH4, N2, and N2O in a ratio of 1: (105-115): (135-145) to deposit and form a low-density SiO2 layer;

[0013] (3) Repeat steps (1) and (2) several times to form a dense SiO2 layer.

[0014] As an improvement of the above scheme, in step (1), the flow rate of SiH4 is 15-20 sccm, the flow rate of N2O is 1100-1400 sccm, and the deposition time is 130-160 s;

[0015] In step (2), the flow rate of SiH4 is 7-11 sccm, the flow rate of N2O is 1100-1400 sccm, and the deposition time is 50-80 s.

[0016] As an improvement of the above scheme, after completing step (1), N2O gas is introduced under the conditions of a temperature of 260-310°C, a pressure of 100-140 Pa, and an RF power of 100-140 W to form N2O high-energy particles that impact the high-density SiO2 layer;

[0017] After completing step (2), N2O gas is introduced under the conditions of temperature of 260-310°C, pressure of 100-140Pa, and RF power of 100-140W to form N2O high-energy particles that impact the low-density SiO2 layer.

[0018] As an improvement of the above solution, the SiN x The method for preparing the layer comprises:

[0019] Under the conditions of temperature of 260-310°C, pressure of 25-35Pa, and RF power of 160-170W, SiH4 and NH3 gas are introduced in a ratio of (40-45): (60-65) to form SiN x .

[0020] As an improvement of the above solution, the protective layer also includes a x The fourth film layer on the layer, the fourth film layer is made of SiO2, and the thickness of the fourth film layer is

[0021] Accordingly, the present invention also provides a method for manufacturing a high-reliability LED chip, comprising:

[0022] forming a protective layer on the epitaxial layer and the transparent conductive layer of the light emitting structure,

[0023] The protective layer includes an Al2O3 layer, a dense SiO2 layer and a SiN x The dense SiO2 layer includes a plurality of periodic high-density SiO2 layers and low-density SiO2 layers, and the film density of the high-density SiO2 layer is greater than the film density of the low-density SiO2 layer.

[0024] As an improvement of the above solution, the method for manufacturing the protective layer includes:

[0025] (1) At a temperature of 70 to 90° C., trimethylaluminum (TMA) is introduced to deposit an Al2O3 layer on the surface of the light-emitting structure;

[0026] (2) Under the conditions of temperature of 260-310°C, pressure of 80-120 Pa, and RF power of 80-140 W, introduce gas SiH4, N2, and N2O in a ratio of 1: (50-60): (70-80) to deposit and form a high-density SiO2 layer;

[0027] (3) Under the conditions of temperature of 260-310°C, pressure of 100-140 Pa, and RF power of 100-140 W, N2O gas is introduced to form N2O high-energy particles, which impact the high-density SiO2 layer;

[0028] (4) Under the conditions of temperature of 260-310°C, pressure of 80-160 Pa, and RF power of 120-140 W, introduce gas SiH4, N2, and N2O in a ratio of 1:(105-115):(135-145) to deposit and form a low-density SiO2 layer;

[0029] (5) Under the conditions of temperature of 260-310°C, pressure of 100-140 Pa, and RF power of 100-140 W, N2O gas is introduced to form N2O high-energy particles, which impact the low-density SiO2 layer;

[0030] (6) Under the conditions of temperature of 260-310°C, pressure of 25-35 Pa, and RF power of 160-170 W, introduce gas SiH4 and NH3 in a ratio of (40-45): (60-65) to form SiN x layer;

[0031] Here, steps (2), (3), (4) and (5) are repeated several times.

[0032] The implementation of the present invention has the following beneficial effects:

[0033] The protective layer of the present invention is composed of Al2O3 layer, dense SiO2 layer and SiN x The layers cooperate with each other. First, an Al2O3 layer is deposited on the surface of the light-emitting structure to reduce the cohesive force of the transparent conductive layer. The Al2O3 layer can also be used as a light-introducing layer to improve the light extraction efficiency of the LED chip.

[0034] The invention forms a dense SiO2 layer on the Al2O3 layer, which can not only reduce the total reflection of the Al2O3 layer and improve the light extraction efficiency, but also protect the Al2O3 layer and the epitaxial layer;

[0035] The present invention forms SiN on the dense SiO2 layer x layer, due to the invention of SiN x There are many defects or voids in the layer, and abundant Si or N atoms fill the voids, which produce squeezing pressure on the film molecules around the voids, causing the film to be in a compressive stress state, thereby making the entire protective layer in a compressive stress state, thereby making the transparent conductive layer and the epitaxial layer fit together better and improving the reliability of the chip.

[0036] The dense SiO2 layer of the present invention (1) improves the density of the film by reducing the reaction pressure, increasing the RF radio frequency power, reducing the SiO2 deposition rate, and increasing the Si / O ratio by increasing the temperature, increasing the SiH4 flow rate or reducing the N2O flow rate; (2) utilizes the high-energy particles generated by N2O to interrupt the doped Si-H and NH bonds, so that the H atoms and O atoms combine and evaporate, thereby removing the conductive ionic bonds and filling the sparse holes; (3) by combining the increase of the film thickness and the number of segmented layers, combining long speed, fast and slow, thick and thin, and pausing for blowing in the middle, the high-density SiO2 layer and the low-density SiO2 layer are alternately combined to form a dense SiO2 layer.

[0037] The common SiO2 layer deposits a single layer of SiO2 film, which will have more sparse holes. Compared with the common SiO2 layer, the dense SiO2 layer of the present invention has the characteristics of high hardness, resistance to alkali metal ion corrosion, high dielectric strength, good moisture resistance and good corrosion resistance, so it can better protect the light-emitting structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 It is a schematic diagram of the structure of the LED chip of the present invention;

[0039] Figure 2 It is a schematic diagram of the structure of the protective layer of the LED chip of the present invention. DETAILED DESCRIPTION

[0040] In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings.

[0041] The present invention provides a high-reliability LED chip, which comprises a light-emitting structure and a protective layer, wherein the protective layer covers the light-emitting structure.

[0042] See also Figure 1 The light emitting structure includes a substrate 10, an epitaxial layer 20, a transparent conductive layer 30 and an electrode 40. The epitaxial layer 20 is arranged on the substrate 10, the transparent conductive layer 30 is arranged on the epitaxial layer 20, and the electrode 40 forms a conductive connection with the epitaxial layer 20.

[0043] Preferably, the epitaxial layer 20 is a gallium nitride epitaxial layer, and the transparent conductive layer 30 is an ITO layer.

[0044] The protective layer 50 covers the epitaxial layer 20 and the transparent conductive layer 30. Figure 2 The protective layer 50 includes an Al2O3 layer 51, a dense SiO2 layer 52 and a SiN x Specifically, the Al2O3 layer 51 covers the epitaxial layer 20 and the transparent conductive layer 30, the dense SiO2 layer 52 is disposed on the Al2O3 layer 51, and the SiN x The layer 53 is arranged on the dense SiO 2 layer 52 .

[0045] The dense SiO2 layer 52 includes a plurality of periodic high-density SiO2 layers 521 and low-density SiO2 layers 522 , and the film density of the high-density SiO2 layer 521 is greater than that of the low-density SiO2 layer 522 .

[0046] It should be noted that the compactness of SiO2 film is related to radio frequency (RF) power, substrate temperature, chamber pressure, and N2O / SiH4 flow ratio. There are three methods to characterize the compactness of SiO2 film: infrared spectroscopy, refractive index method, and etching rate method.

[0047] In each cycle, the thickness of the high-density SiO2 layer is The thickness of the low-density SiO2 layer is

[0048] Preferably, the thickness of the high-density SiO2 layer in each period is The thickness of the low-density SiO2 layer is

[0049] Preferably, the thickness of the Al2O3 layer is The total thickness of the dense SiO2 layer is S N x The thickness of the layer is

[0050] Since SiN x The layer is easy to break, in order to protect the SiN x layer, the protective layer 50 also includes a layer covering the SiN x A fourth film layer 54 is formed on the layer 53 .

[0051] Preferably, the fourth film layer is made of SiO2 and has a thickness of

[0052] Preferably, the total thickness of the protective layer is

[0053] It should be noted that in the process of forming a dense SiO2 layer, if the SiO2 deposition rate is too fast, the formed SiO2 film will be sparse and easily hydrolyzed; if the reaction temperature is lower than 200°C, the formed SiO2 film will contain Si-H and NH bonds due to the incorporation of H and N, making the SiO2 film have a certain conductivity, affecting the electrical properties of the chip.

[0054] The dense SiO2 layer of the present invention is formed by the following method to have a film layer with high hardness, resistance to alkali metal ion corrosion, high dielectric strength, good moisture resistance and good corrosion resistance:

[0055] (1) Improving the density of the film by reducing the reaction pressure, increasing the RF power, reducing the SiO2 deposition rate, and increasing the Si / O ratio by increasing the temperature, increasing the SiH4 flow rate or reducing the N2O flow rate;

[0056] (2) Using high-energy particles generated by N2O to break the doped Si-H and NH bonds, the H atoms and O atoms combine and evaporate, thereby removing the conductive ionic bonds and filling the sparse holes;

[0057] (3) By combining increasing the film thickness and the number of segmented layers, combining long speed, fast speed, thick and thin, and pausing for purge in the middle, the high-density SiO2 layer and the low-density SiO2 layer are alternately combined to form a dense SiO2 layer.

[0058] The common SiO2 layer deposits a single layer of SiO2 film, which will have more sparse holes. Compared with the common SiO2 layer, the dense SiO2 layer of the present invention has the characteristics of high hardness, resistance to alkali metal ion corrosion, high dielectric strength, good moisture resistance and good corrosion resistance, so it can better protect the light-emitting structure.

[0059] Specifically, the method for manufacturing the protective layer includes:

[0060] (1) At a temperature of 70 to 90° C., trimethylaluminum (TMA) is introduced to deposit an Al2O3 layer on the surface of the light-emitting structure;

[0061] Preferably, the ALD atomic layer deposition technology is used to pass the precursor trimethylaluminum (TMA) into the reaction chamber in the form of pulses at a temperature of 70 to 90°C to obtain a single layer of Al2O3, which is repeated 2300 to 2600 times to form a single layer of Al2O3 with a thickness of of Al2O3 layer.

[0062] More preferably, the ALD atomic layer deposition technology is used to pass the precursor trimethylaluminum (TMA) into the reaction chamber in the form of pulses at a temperature of 80°C to obtain a single layer of Al2O3, which is repeated 2300 to 2600 times to form a single layer of Al2O3 with a thickness of of Al2O3 layer.

[0063] (2) Under the conditions of temperature of 260-310°C, pressure of 80-120 Pa, and RF power of 80-140 W, introduce gas SiH4, N2, and N2O in a ratio of 1: (50-60): (70-80) to deposit and form a high-density SiO2 layer;

[0064] Preferably, a PECVD method is used, and at a temperature of 260-310°C, a pressure of 80-100 Pa, and an RF power of 80-120 W, gases SiH4, N2, and N2O are introduced in a ratio of 1:(50-60):(70-80) to deposit and form a high-density SiO2 layer.

[0065] Preferably, the flow rate of SiH4 is 15-20 sccm, the flow rate of N2O is 1100-1400 sccm, the deposition time is 130-160 s, and the deposition rate is

[0066] More preferably, the flow rate of SiH4 is 16-20 sccm, the flow rate of N2O is 1100-1300 sccm, the deposition time is 140-160 s, and the deposition rate is

[0067] (3) Under the conditions of temperature of 260-310°C, pressure of 100-140 Pa, and RF power of 100-140 W, N2O gas is introduced to form N2O high-energy particles, which impact the high-density SiO2 layer;

[0068] Preferably, under the conditions of temperature of 260-310° C., pressure of 100-130 Pa, and RF power of 110-130 W, gaseous N 2 O is introduced to form N 2 O high-energy particles, which collide with the high-density SiO 2 layer.

[0069] Preferably, the flow rate of N2O is 1800-2200 sccm, and the impact time is 100-140 s.

[0070] More preferably, the flow rate of N2O is 1900-2200 sccm and the impact time is 110-130 s.

[0071] (4) Under the conditions of temperature of 260-310°C, pressure of 80-160 Pa, and RF power of 120-140 W, introduce gas SiH4, N2, and N2O in a ratio of 1:(105-115):(135-145) to deposit and form a low-density SiO2 layer;

[0072] Preferably, a PECVD method is used, and at a temperature of 260-310°C, a pressure of 130-160Pa, and an RF power of 125-135W, gases SiH4, N2 and N2O are introduced in a ratio of 1:(105-115):(135-145) to deposit a low-density SiO2 layer.

[0073] Preferably, the flow rate of SiH4 is 7-11 sccm, the flow rate of N2O is 1100-1400 sccm, and the deposition time is 50-80 s.

[0074] More preferably, the flow rate of SiH4 is 7-10 sccm, the flow rate of N2O is 1200-1400 sccm, and the deposition time is 60-70 s.

[0075] (5) Under the conditions of temperature of 260-310°C, pressure of 100-140 Pa, and RF power of 100-140 W, N2O gas is introduced to form N2O high-energy particles, which impact the low-density SiO2 layer;

[0076] Preferably, under the conditions of temperature of 260-310° C., pressure of 100-130 Pa, and RF power of 110-130 W, gaseous N 2 O is introduced to form N 2 O high-energy particles, which collide with the low-density SiO 2 layer.

[0077] Preferably, the flow rate of N2O is 1800-2200 sccm, and the impact time is 100-140 s.

[0078] More preferably, the flow rate of N2O is 1900-2200 sccm and the impact time is 110-130 s.

[0079] Specifically, steps (2), (3), (4) and (5) are repeated several times to form a dense SiO2 layer.

[0080] (6) Under the conditions of temperature of 260-310°C, pressure of 25-35 Pa, and RF power of 160-170 W, introduce gas SiH4 and NH3 in a ratio of (40-45): (60-65) to form SiN x layer;

[0081] Preferably, a PECVD method is used to introduce SiH4 and NH3 gases at a ratio of (42-44): (62-64) at a temperature of 260-310°C, a pressure of 27-32 Pa, and an RF power of 160-170 W to form SiN x .

[0082] (7) Under the conditions of temperature of 260-310° C., pressure of 80-120 Pa, and RF power of 80-140 W, introduce gas SiH 4 , N 2 , and N 2 O in a ratio of 1: (50-60): (70-80) to form SiO 2 ;

[0083] Preferably, a PECVD method is used to introduce gases SiH4, N2 and N2O in a ratio of 1: (50-60): (70-80) at a temperature of 260-310°C, a pressure of 80-100 Pa, and an RF power of 80-120 W to deposit SiO2.

[0084] Preferably, the flow rate of SiH4 is 15-20 sccm, the flow rate of N2O is 1100-1400 sccm, the deposition time is 130-160 s, and the deposition rate is

[0085] More preferably, the flow rate of SiH4 is 16-20 sccm, the flow rate of N2O is 1100-1300 sccm, the deposition time is 140-160 s, and the deposition rate is

[0086] Accordingly, the present invention also provides a method for manufacturing a high-reliability LED chip, comprising:

[0087] forming a protective layer on the epitaxial layer and the transparent conductive layer of the light emitting structure,

[0088] The protective layer includes an Al2O3 layer, a dense SiO2 layer and a SiN x The dense SiO2 layer includes a plurality of periodic high-density SiO2 layers and low-density SiO2 layers, and the film density of the high-density SiO2 layer is greater than the film density of the low-density SiO2 layer.

[0089] The method for manufacturing the protective layer comprises:

[0090] (1) At a temperature of 70 to 90° C., trimethylaluminum (TMA) is introduced to deposit an Al2O3 layer on the surface of the light-emitting structure;

[0091] (2) Under the conditions of temperature of 260-310°C, pressure of 80-120 Pa, and RF power of 80-140 W, introduce gas SiH4, N2, and N2O in a ratio of 1: (50-60): (70-80) to deposit and form a high-density SiO2 layer;

[0092] (3) Under the conditions of temperature of 260-310°C, pressure of 100-140 Pa, and RF power of 100-140 W, N2O gas is introduced to form N2O high-energy particles, which impact the high-density SiO2 layer;

[0093] (4) Under the conditions of temperature of 260-310°C, pressure of 80-160 Pa, and RF power of 120-140 W, introduce gas SiH4, N2, and N2O in a ratio of 1:(105-115):(135-145) to deposit and form a low-density SiO2 layer;

[0094] (5) Under the conditions of temperature of 260-310°C, pressure of 100-140 Pa, and RF power of 100-140 W, N2O gas is introduced to form N2O high-energy particles, which impact the low-density SiO2 layer;

[0095] (6) Under the conditions of temperature of 260-310°C, pressure of 25-35 Pa, and RF power of 160-170 W, introduce gas SiH4 and NH3 in a ratio of (40-45): (60-65) to form SiN x layer;

[0096] Here, steps (2), (3), (4) and (5) are repeated several times.

[0097] The protective layer of the present invention is composed of Al2O3 layer, dense SiO2 layer and SiN x The layers cooperate with each other. First, an Al2O3 layer is deposited on the surface of the light-emitting structure to reduce the cohesive force of the transparent conductive layer. The Al2O3 layer can also be used as a light-introducing layer to improve the light extraction efficiency of the LED chip.

[0098] The invention forms a dense SiO2 layer on the Al2O3 layer, which can not only reduce the total reflection of the Al2O3 layer and improve the light extraction efficiency, but also protect the Al2O3 layer and the epitaxial layer;

[0099] The present invention forms SiN on the dense SiO2 layer x layer, due to the invention of SiN x There are many defects or voids in the layer, and abundant Si or N atoms fill the voids, which produce squeezing pressure on the film molecules around the voids, causing the film to be in a compressive stress state, thereby making the entire protective layer in a compressive stress state, thereby making the transparent conductive layer and the epitaxial layer fit together better and improving the reliability of the chip.

[0100] It should be noted that when SiN x When the layer structure is dense and there are no redundant Si or N atoms, the internal stress of the film is small. x The layer has many defects or voids, and the abundant Si or N atoms can fill the voids, exerting a squeezing force on the film molecules around the voids, causing the film to present a compressive stress state. x The preparation method of the layer is to reduce the pressure and adjust the ratio of SiH4 and NH3 gas to make SiN x There are many defects or voids in the layer.

[0101] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of the present invention. Therefore, equivalent changes made according to the claims of the present invention are still within the scope of the present invention.

Claims

1. A high reliability LED chip, characterized in that: It includes a light-emitting structure and a protective layer, wherein the protective layer covers the epitaxial layer and the transparent conductive layer of the light-emitting structure; The protective layer includes an Al2O3 layer, a dense SiO2 layer and a SiN x Layer, the dense SiO2 layer includes a plurality of periodic high-density SiO2 layers and low-density SiO2 layers, and the film density of the high-density SiO2 layer is greater than the film density of the low-density SiO2 layer; The thickness of the high-density SiO2 layer in each period is 300~600Å, and the thickness of the low-density SiO2 layer is 100~400Å; The preparation method of the dense SiO2 layer comprises: (1) Under the conditions of temperature of 260-310°C, pressure of 80-120Pa, and RF power of 80-140W, introduce gases SiH4, N2, and N2O in a ratio of 1: (50-60): (70-80) to deposit and form a high-density SiO2 layer; (2) Under the conditions of temperature of 260-310°C, pressure of 120-160Pa, and RF power of 120-140W, introduce gases SiH4, N2, and N2O in a ratio of 1: (105-115): (135-145) to deposit and form a low-density SiO2 layer; (3) Repeat steps (1) and (2) several times to form a dense SiO2 layer; After completing step (1), N2O gas is introduced under the conditions of a temperature of 260-310°C, a pressure of 100-140 Pa, and an RF power of 100-140 W to form N2O high-energy particles that impact the high-density SiO2 layer; After completing step (2), N2O gas is introduced under the conditions of temperature of 260-310°C, pressure of 100-140 Pa, and RF power of 100-140 W to form N2O high-energy particles that impact the low-density SiO2 layer.

2. The high reliability LED chip according to claim 1, characterized in that: The thickness of the Al2O3 layer is 2000~2400Å, the total thickness of the dense SiO2 layer is 1200~1800Å, and the SiN x The thickness of the layer is 1600~1800Å.

3. The high reliability LED chip according to claim 1, characterized in that: In step (1), the flow rate of SiH4 is 15-20 sccm, the flow rate of N2O is 1100-1400 sccm, and the deposition time is 130-160 s; In step (2), the flow rate of SiH4 is 7~11sccm, the flow rate of N2O is 1100~1400sccm, and the deposition time is 50~80s.

4. The high reliability LED chip according to claim 1, characterized in that: The SiN x The method for preparing the layer comprises: Under the conditions of temperature of 260~310°C, pressure of 25~35Pa, and RF power of 160~170W, SiH4 and NH3 gas were introduced in a ratio of (40~45): (60~65) to form SiN x .

5. The high reliability LED chip according to claim 1, characterized in that: The protective layer also includes a layer covering SiN x A fourth film layer on the layer, the fourth film layer is made of SiO2, and the thickness of the fourth film layer is 400~600Å.

6. A method for manufacturing a high-reliability LED chip, used for manufacturing the high-reliability LED chip as claimed in any one of claims 1 to 5, characterized in that: include: forming a protective layer on the epitaxial layer and the transparent conductive layer of the light emitting structure, The protective layer includes an Al2O3 layer, a dense SiO2 layer and a SiN x The dense SiO2 layer includes a plurality of periodic high-density SiO2 layers and low-density SiO2 layers, and the film density of the high-density SiO2 layer is greater than the film density of the low-density SiO2 layer.

7. The method for manufacturing a high-reliability LED chip according to claim 6, wherein: The method for manufacturing the protective layer comprises: (1) At a temperature of 70-90°C, trimethylaluminum (TMA) is introduced to deposit an Al2O3 layer on the surface of the light-emitting structure; (2) Under the conditions of temperature of 260-310°C, pressure of 80-120Pa, and RF power of 80-140W, introduce gas SiH4, N2, and N2O in a ratio of 1: (50-60): (70-80) to deposit and form a high-density SiO2 layer; (3) Under the conditions of temperature of 260-310°C, pressure of 100-140Pa, and RF power of 100-140W, N2O gas is introduced to form N2O high-energy particles, which impact the high-density SiO2 layer; (4) Under the conditions of temperature of 260-310°C, pressure of 80-160Pa, and RF power of 120-140W, introduce gas SiH4, N2, and N2O in a ratio of 1:(105-115):(135-145) to deposit and form a low-density SiO2 layer; (5) Under the conditions of temperature of 260-310°C, pressure of 100-140Pa, and RF power of 100-140W, N2O gas is introduced to form N2O high-energy particles, which impact the low-density SiO2 layer; (6) Under the conditions of temperature of 260-310°C, pressure of 25-35Pa, and RF power of 160-170W, introduce gas SiH4 and NH3 in a ratio of (40-45): (60-65) to form SiN x layer; Here, steps (2), (3), (4) and (5) are repeated several times.

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