Display device

Abstract

A display device is provided. The display device includes a substrate and a light-emitting layer on the substrate. The display device also includes a sealing portion on the light-emitting layer. The sealing portion includes a first inorganic layer. The first inorganic layer includes at least one layer containing silicon, oxygen, nitrogen and hydrogen. The at least one layer of the first inorganic layer includes a silicon content of about 30-40at%, an oxygen content of about 15-35at%, a nitrogen content of about 10-20at%, and a hydrogen content of about 20-30at%.

Description

[0001] This application claims the priority of Korean Patent Application No. 10-2019-0017682 filed on February 15, 2019, in the Korean Intellectual Property Office (KIPO), and Korean Patent Application No. 10-2019-0069840 filed on June 13, 2019, in the KIPO, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0002] Exemplary embodiments of the present invention relate to a display device, and more particularly, to a display device that minimizes deviation of light transmittance variation due to a wavelength of sunlight in a sealing portion and a method of manufacturing the display device. Background Art

[0003] Compared to cathode ray tubes ("CRTs"), flat panel display ("FPD") devices have the advantage of reduced weight and volume. Examples of such FPD devices may include liquid crystal display ("LCD") devices, field emission display ("FED") devices, plasma display panel ("PDP") devices, and organic light emitting diode ("OLED") display devices.

[0004] In such a display device, an OLED display device uses an OLED that generates light through the recombination of electrons and holes to display an image. An OLED display device can be used as a display in a vehicle. However, the OLED display in a vehicle is often exposed to sunlight for a long time. Therefore, the deviation of the light transmittance change caused by the wavelength of sunlight in the sealed part increases. The deviation of the light transmittance causes uneven colors in the display device. Therefore, the image quality of the display device will deteriorate. Summary of the invention

[0005] Example embodiments may relate to a display device capable of substantially minimizing a deviation in a light transmittance variation according to a wavelength of sunlight in a sealing portion, and a method of manufacturing the same.

[0006] According to an exemplary embodiment, a display device includes a substrate and a light-emitting layer on the substrate. The display device also includes a sealing portion on the light-emitting layer. The sealing portion includes a first inorganic layer. The first inorganic layer includes at least one layer containing silicon, oxygen, nitrogen and hydrogen. The at least one layer of the first inorganic layer includes a silicon content of about 30-40at%, an oxygen content of about 15-35at%, a nitrogen content of about 10-20at%, and a hydrogen content of about 20-30at%.

[0007] The silicon content may be about 35 at %, the oxygen content may be about 25 at %, the nitrogen content may be about 15 at %, and the hydrogen content may be about 25 at %.

[0008] The first inorganic layer may include SiON:H.

[0009] The sealing portion may further include a second inorganic layer, and the second inorganic layer may be disposed between the first inorganic layer and the light emitting layer.

[0010] The sealing portion may further include at least one organic layer.

[0011] At least one organic layer may be disposed between the first inorganic layer and the second inorganic layer.

[0012] The first inorganic layer may have a refractive index substantially equal to or less than about 1.70.

[0013] The first inorganic layer may include at least two sub-inorganic layers.

[0014] The at least two sub-inorganic layers may include a first sub-inorganic layer on the light emitting layer, and may further include at least one of a second sub-inorganic layer on the first sub-inorganic layer and a third sub-inorganic layer below the first sub-inorganic layer.

[0015] The silicon content, the oxygen content, the nitrogen content, and the hydrogen content included in the first sub-inorganic layer may be about 30-40 at %, about 15-35 at %, about 10-20 at %, and about 20-30 at %, respectively.

[0016] At least one of the second sub-inorganic layer and the third sub-inorganic layer may include silicon, nitrogen and hydrogen, and the silicon content, nitrogen content and hydrogen content included in at least one of the second sub-inorganic layer and the third sub-inorganic layer may be approximately 30-50at%, approximately 30-50at%, and approximately 20-30at%, respectively.

[0017] The silicon content, the nitrogen content, and the hydrogen content included in at least one of the second sub-inorganic layer and the third sub-inorganic layer may be about 40 at %, about 40 at %, and about 20 at %, respectively.

[0018] The silicon content, the nitrogen content, and the hydrogen content included in at least one of the second sub-inorganic layer and the third sub-inorganic layer may be about 30 at %, about 50 at %, and about 20 at %, respectively.

[0019] The first sub-inorganic layer may include SiON:H, and at least one of the second sub-inorganic layer and the third sub-inorganic layer may include SiN x :H.

[0020] The first sub-inorganic layer, the second sub-inorganic layer, and the third sub-inorganic layer may have different refractive indices from each other.

[0021] The first sub-inorganic layer may have a refractive index in the range from about 1.47 to about 1.70, and the second and third sub-inorganic layers may have a refractive index higher than that of the first sub-inorganic layer.

[0022] According to another exemplary embodiment, a display device includes a substrate and a light-emitting layer on the substrate. A sealing portion is on the light-emitting layer. The sealing portion includes a first inorganic layer. The first inorganic layer includes a plurality of sub-inorganic layers disposed adjacent to each other. One of the plurality of sub-inorganic layers includes a silicon content of about 30-40 at %, an oxygen content of about 15-35 at %, a nitrogen content of about 10-20 at %, and a hydrogen content of about 20-30 at %.

[0023] According to another exemplary embodiment, a method for manufacturing a display device includes: forming a light emitting layer on a substrate. Disposing a structure including the substrate and the light emitting layer in a chamber. Supplying the following into the chamber: SiH 4 , NH from the second supply pipe 3 , N from the third supply pipe 2 O, N from the fourth supply pipe 2 and H from the fifth supply pipe 2 , to form an inorganic layer of the sealing part on the light-emitting layer. 2 The flow rate of O is the NH 3 About 5 times or more the flow rate.

[0024] N 2 The flow rate of O may range from about 1330 standard cubic centimeters per minute (sccm) to about 3990 sccm; and NH 3 The flow rate may be in the range of from about 250 sccm to about 750 sccm.

[0025] S H 4 The flow rate may be in a range from about 495 seem to about 1485 seem.

[0026] N 2 The flow rate may be in the range of from about 4930 sccm to about 14790 sccm.

[0027] H 2 The flow rate can range from about 5635 sccm to about 16905 sccm.

[0028] The SiH from the first supply pipe can be 4 , NH from the second supply pipe 3 , N from the third supply pipe 2 O, N from the fourth supply pipe 2 and H from the fifth supply pipe2 The mixture is mixed at a mixing unit in the chamber and injected toward the structure through an injection unit in the chamber.

[0029] The inorganic layer may include silicon, oxygen, nitrogen, and hydrogen, and the silicon content, oxygen content, nitrogen content, and hydrogen content included in the inorganic layer may be about 30-40 at %, about 15-35 at %, about 10-20 at %, and about 20-30 at %, respectively.

[0030] The silicon content, the oxygen content, the nitrogen content, and the hydrogen content included in the inorganic layer may be about 35 at %, about 25 at %, about 15 at %, and about 25 at %, respectively.

[0031] The inorganic layer may include SiON:H.

[0032] The inorganic layer may have a refractive index substantially equal to or less than about 1.70.

[0033] The method may further include: before forming the inorganic layer, 4 NH is supplied from the first supply pipe to the chamber. 3 The N 2 H is supplied from the fourth supply pipe to the chamber. 2 The inorganic sub-layer is supplied from the fifth supply pipe into the chamber to form a sealing portion on the light emitting layer.

[0034] The method may further include: 4 NH is supplied from the first supply pipe to the chamber. 3 The N 2 H is supplied from the fourth supply pipe to the chamber. 2 The inorganic layer is supplied from the fifth supply pipe into the chamber to form a second sub-inorganic layer of the sealing portion on the inorganic layer.

[0035] In another exemplary embodiment, the display device includes a substrate and a light-emitting layer on the substrate. The sealing portion is on the light-emitting layer. The sealing portion includes a first inorganic layer. The first inorganic layer includes at least one layer containing silicon, oxygen, nitrogen and hydrogen. The difference between the transmittance of at least one layer that has been exposed to sunlight for 1-6 hours in the blue light wavelength region, the green light wavelength region and the red light wavelength region and the transmittance of the at least one layer that has not been exposed to sunlight in the blue light wavelength region, the green light wavelength region and the red light wavelength region is less than or equal to about 0.4%.

[0036] The foregoing is illustrative only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features will become apparent by reference to the drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] A more complete understanding of the embodiments will become more apparent by describing embodiments thereof in detail with reference to the accompanying drawings, in which:

[0038] Figure 1 is a block diagram showing a display device according to an embodiment;

[0039] Figure 2 It is shown Figure 1 An equivalent circuit diagram of one of the pixels shown in ;

[0040] Figure 3 It is shown that Figure 1 A plan view of a display device showing one of the pixels shown in and a line connected to the pixel;

[0041] FIG. 4A to FIG. 4G It is shown Figure 3 a view of only a portion of an element;

[0042] Figure 5 is along Figure 3 A cross-sectional view taken along line II';

[0043] Figure 6 It is shown Figure 5 An enlarged view of part A in FIG.

[0044] Figure 7 is a graph showing changes in light transmittance of the upper inorganic layer according to the wavelength of light;

[0045] Figure 8 is a front view showing an apparatus for performing a method of manufacturing a display device according to an exemplary embodiment;

[0046] Fig. 9 is a diagram showing a method according to another exemplary embodiment Figure 5 An enlarged view of part A in FIG.

[0047] Fig.10 is a diagram showing a method according to another exemplary embodiment Figure 5 an enlarged view of portion A in FIG. 1 ; and

[0048] FIG. 11A to FIG. 11C is a view illustrating an apparatus for performing a method of manufacturing a display device according to an exemplary embodiment. DETAILED DESCRIPTION

[0049] The exemplary embodiments will now be described more fully below with reference to the accompanying drawings. Although the invention can be modified in various ways and has many embodiments, the exemplary embodiments are shown in the drawings and will be mainly described in the specification. However, the scope of the inventive concept is not limited to the exemplary embodiments.

[0050] In the accompanying drawings, for clarity and ease of description, the thickness of multiple layers and regions is shown in an amplified manner. When a layer, region or plate is referred to as "on" another layer, another region or another plate, the layer, region or plate may be directly on the other layer, the other region or the other plate, or there may be an intermediate layer, intermediate region or intermediate plate between them. On the contrary, when a layer, region or plate is referred to as "directly on" another layer, another region or another plate, there may be no intermediate layer, intermediate region or intermediate plate between them. In addition, when a layer, region or plate is referred to as "below" another layer, another region or another plate, the layer, region or plate may be directly below the other layer, the other region or the other plate, or there may be an intermediate layer, intermediate region or intermediate plate between them. On the contrary, when a layer, region or plate is referred to as "directly on" another layer, another region or another plate, there may be no intermediate layer, intermediate region or intermediate plate between them.

[0051] For ease of description, spatially relative terms such as "below", "under", "below", "above", "above", etc. may be used herein to describe the relationship between one element or component shown in the drawings and another element or component. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the drawings. For example, where the device shown in the drawings is reversed, a device "below" or "below" another device may be placed "above" another device. Thus, the illustrative term "below" may include both a position below and a position above. The device may also be oriented in other directions, so the spatially relative terms may be interpreted differently depending on the orientation.

[0052] Throughout the specification, when an element is referred to as being "connected" to another element, the element is "directly connected" to the other element, or "electrically connected" to the other element with one or more intermediate elements interposed therebetween. It will also be understood that when the terms "comprising" and / or "including" are used in this specification, it indicates the presence of the stated features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0053] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, the "first element" discussed below may be named "second element" or "third element" without departing from the teachings herein, and the "second element" and "third element" may be named in a similar manner.

[0054] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation for the particular value determined by one of ordinary skill in the art, taking into account the measurements being discussed and the errors associated with the measurement of the particular quantity (e.g., limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. It will also be understood that, unless explicitly defined in this specification, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and will not be interpreted as an ideal or overly formal meaning.

[0056] In order to specifically describe the exemplary embodiments, some parts irrelevant to the description may not be provided, and the same reference numerals denote the same elements throughout the specification.

[0057] In the following, reference will be made to Figures 1 to 11C A display device and a method of manufacturing the same are described in detail.

[0058] Figure 1 is a block diagram illustrating a display device according to an exemplary embodiment.

[0059] like Figure 1 As shown in , a display device 5555 according to an exemplary embodiment of the inventive concept includes a substrate 100 , a scan driver 102 , an emission control driver 103 , a data driver 104 , and a power supply 105 .

[0060] "i+2" scan lines SL0 to SLi+1, "k" emission control lines EL1 to ELk, "j" data lines DL1 to DLj, "k×j" pixels PX, a scan driver 102, an emission control driver 103 and a data driver 104 are arranged on the substrate 100, wherein each of i, j and k is a natural number greater than 1.

[0061] A plurality of pixels PX are located in the display region 100 a of the substrate 100 .

[0062] "i+2" scan lines SL0 to SLi+1, "k" emission control lines EL1 to ELk, and "j" data lines DL1 to DLj are located in the display region 100a of the substrate 100. In such an exemplary embodiment, the "i+2" scan lines SL0 to SLi+1 extend to the non-display region 100b to be connected to the scan driver 102, the "k" emission control lines EL1 to ELk extend to the non-display region 100b to be connected to the emission control driver 103, and the "j" data lines DL1 to DLj extend to the non-display region 100b to be connected to the data driver 104.

[0063] The scan driver 102 and the emission control driver 103 may be manufactured on the substrate 100 by substantially the same process as forming the pixel PX. For example, the switching elements of the scan driver 102, the emission control driver 103, and the pixel PX may be formed on the substrate 100 by a photolithography process.

[0064] In an exemplary embodiment, the emission control driver 103 may be embedded in the scan driver 102. For example, the scan driver 102 may also perform the function of the emission control driver 103. In such an exemplary embodiment, the scan lines SL0 to SLi+1 and the emission control lines EL1 to ELk are driven together by the scan driver 102.

[0065] The data driver 104 may be manufactured in the form of a chip. The data driver 104 may be attached to the substrate 100 in a chip bonding manner. In an exemplary embodiment, the data driver 104 may be disposed on a separate printed circuit board instead of being disposed on the substrate 100. In this embodiment, the data lines DL1 to DLj are connected to the data driver 104 through the printed circuit board.

[0066] In an exemplary embodiment, each of the scan driver 102 and the emission control driver 103 may be manufactured in the form of a chip. The chip-type scan driver 102 may be located in the non-display area 100b of the substrate 100 or on another separate printed circuit board. The chip-type emission control driver 103 may be located in the non-display area 100b of the substrate 100 or on another separate printed circuit board.

[0067] The scan lines SL0 to SLi+1 are arranged along the Y-axis direction, and each of the scan lines SL0 to SLi+1 extends along the X-axis direction. The emission control lines EL1 to ELk are arranged along the Y-axis direction, and each of the emission control lines EL1 to ELk extends along the X-axis direction. The data lines DL1 to DLj are arranged along the X-axis direction, and each of the data lines DL1 to DLj extends along the Y-axis direction. However, the arrangement of the scan lines and the emission control lines is not limited to Figure 1 The arrangement shown in the exemplary embodiment of .

[0068] The scan line SL0 closest to the data driver 104 among the aforementioned scan lines SL0 to SLi+1 is defined as a first dummy scan line SL0, and the scan line SLi+1 farthest from the data driver 104 among the aforementioned scan lines SL0 to SLi+1 is defined as a second dummy scan line SLi+1. In addition, the scan lines SL1 to SLi located between the first dummy scan line SL0 and the second dummy scan line SLi+1 are sequentially defined as the first scan line SL1 to the i-th scan line SLi, respectively, from the scan lines closer to the data driver 104.

[0069] The scan driver 102 generates a scan signal according to a scan control signal provided from a timing controller. The scan driver 102 sequentially applies the scan signal to a plurality of scan lines SL0 to SLi+1. The scan driver 102 outputs a first scan signal to an i-th scan signal, a first dummy scan signal, and a second dummy scan signal. The first scan signal to the i-th scan signal outputted from the scan driver 102 are applied to the first scan line SL1 to the i-th scan line SLi, respectively. For example, the n-th scan signal is applied to the n-th scan line SLn, where n is a natural number greater than or equal to 1 and less than or equal to i. In addition, the first dummy scan signal outputted from the scan driver 102 is applied to the first dummy scan line SL0. The second dummy scan signal outputted from the scan driver 102 is applied to the second dummy scan line SLi+1. However, exemplary embodiments of the present inventive concept are not limited thereto.

[0070] During one frame period, the scan driver 102 sequentially outputs the first scan signal to the i-th scan signal starting from the first scan signal. In such an exemplary embodiment, the scan driver 102 outputs the first dummy scan signal before the first scan signal, and outputs the second dummy scan signal after the i-th scan signal. In other words, the scan driver 102 first outputs the first dummy scan signal during one frame period, and the second dummy scan signal is the last signal output during one frame period. Therefore, during one frame period, all scan lines SL0 to SLi+1 including the dummy scan lines SL0 and SLi+1 are sequentially driven starting from the first dummy scan line SL0.

[0071] The emission control driver 103 generates an emission control signal according to a control signal provided from a timing controller. The emission control driver 103 sequentially applies the emission control signal to a plurality of emission control lines EL1 to ELk. The first emission control signal to the kth emission control signal outputted from the emission control driver 103 are applied to the first emission control line EL1 to the kth emission control line ELk, respectively. For example, the mth emission control signal is applied to the mth emission control line ELm, where m is a natural number greater than or equal to 1 and less than or equal to k. During one frame period, the emission control driver 103 sequentially outputs the first emission control signal to the kth emission control signal starting from the first emission control signal. Therefore, during one frame period, all emission control lines EL1 to ELk are sequentially driven starting from the first emission control line EL1.

[0072] The data driver 104 applies the first data voltage to the jth data voltage to the first data line DL1 to the jth data line DLj, respectively. For example, the data driver 104 receives an image data signal and a data control signal from a timing controller. In addition, the data driver 104 samples the image data signal according to the data control signal, sequentially latches the sampled image data signal corresponding to one horizontal line in each horizontal period, and applies the latched image data signal to the data lines DL1 to DLj substantially at the same time.

[0073] The pixels PX may be arranged in a matrix form on the substrate 100 in the display region 100a. The pixels PX emit light having different colors from each other. Figure 1 In the pixel PX shown in FIG. 1 , the pixel indicated by the reference numeral “R” is a red pixel that emits red light, the pixel indicated by the reference numeral “G” is a green pixel that emits green light, and the pixel indicated by the reference numeral “B” is a blue pixel that emits blue light. However, in other embodiments, the colors of the pixels and their arrangement may be different. Figure 1 The colors of the pixels and their arrangements are different in the exemplary embodiment shown in FIG.

[0074] For example, the display device according to the embodiment may further include at least one white pixel emitting white light. The white pixel may be disposed on the substrate 100 in the display region 100a.

[0075] A pixel is connected to at least one scan line. Figure 1In the exemplary embodiment shown in , among the plurality of pixels PX connected to the first data line DL1, the blue pixel closest to the data driver 104 is connected to three scan lines receiving scan signals with different output timings, for example, the first dummy scan line SL0, the first scan line SL1, and the second scan line SL2. In such an embodiment, among the plurality of pixels PX connected to the second data line DL2, the green pixel third closest to the data driver 104 is connected to three scan lines receiving scan signals with different output timings, for example, the fourth scan line SL4, the fifth scan line SL5, and the sixth scan line SL6.

[0076] In an exemplary embodiment, pixels that are commonly connected to the same data line and positioned adjacent to each other are commonly connected to at least one scan line. In other words, two adjacent (e.g., adjacent in the Y-axis direction) pixels connected to the same data line share at least one scan line. In an exemplary embodiment, a green pixel connected to the second data line DL2 and closest to the data driver 104 (hereinafter, "first green pixel") and a green pixel connected to the second data line DL2 and second closest to the data driver 104 (hereinafter, "second green pixel") are positioned adjacent to each other in the Y-axis direction, and the first green pixel and the second green pixel are commonly connected to the second scan line SL2. In another exemplary embodiment, a green pixel that is connected to the second data line DL2 and third closest to the data driver 104 is defined as a third green pixel. The third green pixel and the second green pixel are commonly connected to the fourth scan line SL4.

[0077] Pixels commonly connected to the same data line are independently connected to one or more different scan lines. In an exemplary embodiment, the first green pixel is independently connected to the first scan line SL1, the second green pixel is independently connected to the third scan line SL3, and the third green pixel is independently connected to the fifth scan line SL5.

[0078] Thus, each of the pixels connected to the same data line is independently connected to at least one scan line. As used herein, at least two pixels (e.g., a first pixel and a second pixel) are connected to different scan lines in the sense that at least one of the scan lines connected to the first pixel is different from at least one of the scan lines connected to the second pixel. Therefore, each of the pixels connected to the same data line is connected to a different scan line.

[0079] On the other hand, as used herein, at least two pixels (e.g., a first pixel and a second pixel) are connected to the same scan line in the sense that the scan line connected to the first pixel is exactly the same as the scan line connected to the second pixel. Therefore, each of the pixels connected to the same emission control line is connected to the same scan line. In one embodiment, for example, the pixels connected to the second emission control line EL2 are connected to the second scan line SL2, the third scan line SL3, and the fourth scan line SL4.

[0080] For example, red pixels and blue pixels are connected to the 2p-1th data line, and green pixels are connected to the 2pth data line, where p is a natural number greater than or equal to 1. In one embodiment, for example, red pixels and blue pixels are connected to the first data line DL1, and green pixels are connected to the second data line DL2.

[0081] A pixel (hereinafter, "first predetermined pixel") connected to the 2p-1th data line (for example, the first data line DL1) and a pixel (hereinafter, "second predetermined pixel") connected to the 2p+1th data line (for example, the third data line DL3) may be connected to the same scan line. In this embodiment, the first predetermined pixel emits light having a color different from the color of light emitted from the second predetermined pixel. Figure 1 In the exemplary embodiment shown in , the first predetermined pixel can be a blue pixel connected to the first dummy scan line SL0, the first scan line SL1, the second scan line SL2 and the first data line DL1, and the second predetermined pixel can be a red pixel connected to the first dummy scan line SL0, the first scan line SL1, the second scan line SL2 and the third data line DL3.

[0082] Two adjacent (e.g., adjacent in the Y-axis direction) pixels connected to the same data line (e.g., the 2p-1th data line) emit light having different colors from each other, and at least one green pixel adjacent to one of the two adjacent pixels is included in a unit pixel for displaying a unit image. For example, in one exemplary embodiment, a red pixel connected to the third data line DL3 and the first scan line SL1, a blue pixel connected to the third data line DL3 and the third scan line SL3, a green pixel connected to the second data line DL2 and the first scan line SL1, and a green pixel connected to the fourth data line DL4 and the first scan line SL1 may collectively define a unit pixel.

[0083] Each pixel PX generally receives a high potential driving voltage ELVDD, a low potential driving voltage ELVSS, and an initialization voltage Vinit from the power supply 105. In this embodiment, each pixel PX receives all of the high potential driving voltage ELVDD, the low potential driving voltage ELVSS, and the initialization voltage Vinit.

[0084] Figure 2 It is shown Figure 1 Equivalent circuit diagram of the pixel shown in .

[0085] exist Figure 2 In the exemplary embodiment shown in , the pixel PX may include a first switching element T1, a second switching element T2, a third switching element T3, a fourth switching element T4, a fifth switching element T5, a sixth switching element T6, a seventh switching element T7, a storage capacitor Cst, and a light emitting element (hereinafter, referred to as a light emitting diode ("LED")). However, other exemplary embodiments may include a different number of switches.

[0086] like Figure 2 As shown in , each of the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6 and the seventh switching element T7 may be a P-type transistor. However, exemplary embodiments are not limited thereto, and each of the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6 and the seventh switching element T7 may be an N-type transistor in other embodiments.

[0087] The first switching element T1 includes a gate electrode connected to the first node n1, and the first switching element T1 is connected between the second node n2 and the third node n3. One of the source electrode and the drain electrode of the first switching element T1 is connected to the second node n2, and the other of the source electrode and the drain electrode of the first switching element T1 is connected to the third node n3.

[0088] The second switching element T2 includes a gate electrode connected to the nth scan line SLn, and the second switching element T2 is connected between the data line DL and the second node n2. One of the source electrode and the drain electrode of the second switching element T2 is connected to the data line DL, and the other of the source electrode and the drain electrode of the second switching element T2 is connected to the second node n2. The nth scan signal SSn is applied to the nth scan line SLn.

[0089] The third switching element T3 includes a gate electrode connected to the nth scan line SLn, and the third switching element T3 is connected between the first node n1 and the third node n3. One of the source electrode and the drain electrode of the third switching element T3 is connected to the first node n1, and the other of the source electrode and the drain electrode of the third switching element T3 is connected to the third node n3.

[0090] The fourth switching element T4 includes a gate electrode connected to the n-1th scan line SLn-1, and the fourth switching element T4 is connected between the first node n1 and the initialization line IL. One of the source electrode and the drain electrode of the fourth switching element T4 is connected to the first node n1, and the other of the source electrode and the drain electrode of the fourth switching element T4 is connected to the initialization line IL. The initialization voltage Vinit is applied to the initialization line IL, and the n-1th scan signal SSn-1 is applied to the n-1th scan line SLn-1.

[0091] The fifth switching element T5 includes a gate electrode connected to the emission control line EL, and the fifth switching element T5 is connected between the second node n2 and a high potential line VDL as one of the power supply lines. One of the source electrode and the drain electrode of the fifth switching element T5 is connected to the high potential line VDL, and the other of the source electrode and the drain electrode of the fifth switching element T5 is connected to the second node n2. The high potential driving voltage ELVDD is applied to the high potential line VDL.

[0092] The sixth switching element T6 includes a gate electrode connected to the emission control line EL, and the sixth switching element T6 is connected between the third node n3 and the fourth node n4. One of the source electrode and the drain electrode of the sixth switching element T6 is connected to the third node n3, and the other of the source electrode and the drain electrode of the sixth switching element T6 is connected to the fourth node n4. The emission control signal ES is applied to the emission control line EL.

[0093] The seventh switching element T7 includes a gate electrode connected to the n+1th scan line SLn+1, and the seventh switching element T7 is connected between the initialization line IL and the fourth node n4. One of the source electrode and the drain electrode of the seventh switching element T7 is connected to the initialization line IL, and the other of the source electrode and the drain electrode of the seventh switching element T7 is connected to the fourth node n4. The n+1th scan signal SSn+1 is applied to the n+1th scan line SLn+1.

[0094] The storage capacitor Cst is connected between the high potential line VDL and the first node n1. The storage capacitor Cst stores a signal applied to the gate electrode of the first switching element T1 during one frame period.

[0095] The LED emits light corresponding to the driving current applied by the first switching element T1. The LED emits light with different brightness according to the level of the driving current. The anode electrode of the LED is connected to the fourth node n4, and the cathode electrode of the LED is connected to the low potential line VSL as another one of the power lines. The low potential driving voltage ELVSS is applied to the low potential line VSL. The LED can be an organic light emitting diode ("OLED"). The anode electrode of the LED corresponds to the pixel electrode described below, and the cathode electrode of the LED corresponds to the common electrode described below.

[0096] When the n-1th scan signal SSn-1 is applied to the n-1th scan line SLn-1, the fourth switch element T4 is turned on. The initialization voltage Vinit is applied to the first node n1 (i.e., the gate electrode of the first switch element T1) through the turned-on fourth switch element T4. Therefore, the voltage of the gate electrode of the first switch element T1 is initialized by the initialization voltage Vinit.

[0097] When the nth scan signal SSn is applied to the nth scan line SLn, the second switching element T2 and the third switching element T3 are turned on. The third switching element T3 diode-connects the first switching element T1 in response to the nth scan signal SSn, and the data voltage DA is applied to the first node n1 through the turned-on second switching element T2 and the diode-connected first switching element T1. Therefore, the threshold voltage of the first switching element T1 is detected and stored in the storage capacitor Cst.

[0098] When the emission control signal ES is applied to the emission control line EL, the fifth switching element T5 and the sixth switching element T6 are turned on. A driving current is applied to the LED through the turned-on fifth switching element T5, the turned-on first switching element T1 and the turned-on sixth switching element T6, so that the LED emits light.

[0099] When the n+1th scan signal SSn+1 is applied to the n+1th scan line SLn+1, the seventh switch element T7 is turned on. The initialization voltage Vinit is applied to the fourth node n4 (e.g., the anode electrode of the LED) through the turned-on seventh switch element T7. Therefore, the LED is biased in the opposite direction, so that the LED is turned off.

[0100] Figure 3 It is shown that Figure 1 0 is a plan view of a display device showing one of the pixels shown in and a line connected to the pixel. FIG. 4A to FIG. 4G It is shown Figure 3 A view of a portion of an element. Figure 5 is along Figure 3 A cross-sectional view taken along line II'.

[0101] Figure 4A It is shown Figure 3 FIG. 3 is a view of the semiconductor layer 321 . Figure 4B It is shown Figure 3 FIG. 5 is a view of an n-1th scan line SLn-1, an nth scan line SLn, an n+1th scan line SLn+1, and an emission control line EL. Figure 4C It is shown Figure 3 FIG. 2 is a view of the initialization line IL and the capacitor electrode 201. FIG. Figure 4D It is shown Figure 3FIG. 5 is a view of a data line DL and a high potential line VDL. Figure 4E It is shown Figure 3 View of the pixel electrode PE. Figure 4F It is shown Figure 3 3 and 4, showing a view of a semiconductor layer 321, an n-1th scan line SLn-1, an n-1th scan line SLn, an n+1th scan line SLn+1, and an emission control line EL, Figure 4G It is shown Figure 3 FIG. 1 is a view of a first connection electrode 701, a second connection electrode 702, a third connection electrode 703, a data line DL, a high potential line VDL, and a light blocking layer 190. FIG.

[0102] like Figures 3 to 5 As shown in , a display device according to an exemplary embodiment may include a substrate 100 , a pixel circuit unit 200 , a light blocking layer 190 , a spacer 422 , an LED, and a sealing portion 750 .

[0103] like Figure 3 and Figure 4F As shown in FIG. 1 , the first switching element T1 of the pixel circuit unit 200 includes a first gate electrode GE1 , a first source electrode SE1 , and a first drain electrode DE1 .

[0104] like Figure 3 and Figure 4F As shown in FIG. 2 , the second switching element T2 of the pixel circuit unit 200 includes a second gate electrode GE2 , a second source electrode SE2 , and a second drain electrode DE2 .

[0105] like Figure 3 and Figure 4F As shown in , the third switching element T3 of the pixel circuit unit 200 includes a third gate electrode GE3, a third source electrode SE3 and a third drain electrode DE3.

[0106] like Figure 3 and Figure 4F As shown in , the fourth switching element T4 of the pixel circuit unit 200 includes a fourth gate electrode GE4, a fourth source electrode SE4 and a fourth drain electrode DE4.

[0107] like Figure 3 and Figure 4F As shown in , the fifth switching element T5 of the pixel circuit unit 200 includes a fifth gate electrode GE5 , a fifth source electrode SE5 , and a fifth drain electrode DE5 .

[0108] like Figure 3 and Figure 4F As shown in , the sixth switching element T6 of the pixel circuit unit 200 includes a sixth gate electrode GE6, a sixth source electrode SE6 and a sixth drain electrode DE6.

[0109] like Figure 3 and Figure 4F As shown in , the seventh switching element T7 of the pixel circuit unit 200 includes a seventh gate electrode GE7, a seventh source electrode SE7 and a seventh drain electrode DE7.

[0110] Figure 5 The substrate 100 shown in the figure may include at least two layers. For example, in an exemplary embodiment, the substrate 100 may include a base layer 110, a first layer 111, a second layer 112, a third layer 113, and a fourth layer 114 arranged along the Z-axis direction. The first layer 111 is located between the base layer 110 and the second layer 112, the second layer 112 is located between the first layer 111 and the third layer 113, the third layer 113 is located between the second layer 112 and the fourth layer 114, and the fourth layer 114 is located between the third layer 113 and the buffer layer 120 of the pixel circuit unit 200.

[0111] The first layer 111 may have a thickness greater than that of the second layer 112. As used herein, thickness refers to a length from a top surface of a layer to a bottom surface of the layer measured along the Z-axis direction.

[0112] The third layer 113 may have a thickness greater than that of the fourth layer 114 .

[0113] The first layer 111 and the third layer 113 may have substantially equal thicknesses.

[0114] The second layer 112 and the fourth layer 114 may have substantially equal thicknesses.

[0115] In exemplary embodiments, the base layer 110 may be a glass substrate or a film.

[0116] The first layer 111 may include glass or transparent plastic or be formed of glass or transparent plastic. In addition, the first layer 111 may include an organic material. For example, in an exemplary embodiment, the first layer 111 may include one of kapton, polyethersulfone ("PES"), polycarbonate ("PC"), polyimide ("PI"), polyethylene terephthalate ("PET"), polyethylene naphthalate ("PEN"), polyacrylate ("PAR"), fiber reinforced plastic ("FRP"), etc.

[0117] The second layer 112 may include an inorganic material. For example, the second layer 112 may include silicon nitride (SiN x ) layer, silicon oxide (SiO 2 ) layer and silicon oxynitride (SiO x N y ) layer or a silicon nitride (SiN x ) layer, silicon oxide (SiO 2 ) layer and silicon oxynitride (SiO xN y ) layer is formed.

[0118] The third layer 113 may include or be formed of a material substantially the same as the material included in the above-described first layer 111 .

[0119] The fourth layer 114 may include or be formed of a material substantially the same as the material included in the above-described second layer 112 .

[0120] like Figure 5 As shown in FIG. 1 , the pixel circuit unit 200 may be disposed on the substrate 100 . For example, the pixel circuit unit 200 may be disposed on the fourth layer 114 of the substrate 100 .

[0121] The pixel circuit unit 200 may include, for example, a buffer layer 120, a semiconductor layer 321, a gate insulating layer 140, a first gate electrode GE1, a second gate electrode GE2, a third gate electrode GE3, a fourth gate electrode GE4, a fifth gate electrode GE5, a sixth gate electrode GE6, a seventh gate electrode GE7, an n-1th scan line SLn-1, an n-1th scan line SLn, an n+1th scan line SLn+1, an emission control line EL, a first insulating interlayer 150, an initialization line IL, a capacitor electrode 201, a second insulating interlayer 160, a first connection electrode 701, a second connection electrode 702, a third connection electrode 703, a data line DL, a high potential line VDL and a planarization layer 180.

[0122] The buffer layer 120 is disposed on the fourth layer 114 of the substrate 100. The buffer layer 120 may be disposed over the entire surface of the fourth layer 114. For example, the buffer layer 120 may overlap the entire surface of the fourth layer 114.

[0123] The buffer layer 120 is used to prevent the penetration of undesirable elements and to planarize the surface below. The buffer layer 120 may include a suitable material for planarization and / or penetration prevention. For example, in an exemplary embodiment, the buffer layer 120 may include one of the following: silicon nitride (SiN x ) layer, silicon oxide (SiO 2 ) layer and silicon oxynitride (SiO x N y However, in certain exemplary embodiments, the buffer layer 120 may be omitted based on the type of the substrate 100 and its process conditions.

[0124] like Figure 5 As shown in , the semiconductor layer 321 may be disposed on the buffer layer 120 .

[0125] like Figure 4AAs shown in FIG, the semiconductor layer 321 provides the respective channel regions CH1, CH2, CH3, CH4, CH5, CH6 and CH7 of the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6 and the seventh switching element T7. In addition, the semiconductor layer 321 provides the respective source electrodes SE1, SE2, SE3, SE4, SE5, SE6 and SE7 of the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, the sixth switching element T6 and the seventh switching element T7 and the respective drain electrodes DE1, DE2, DE3, DE4, DE5, DE6 and DE7.

[0126] The semiconductor layer 321 may include a first channel region CH1, a second channel region CH2, a third channel region CH3, a fourth channel region CH4, a fifth channel region CH5, a sixth channel region CH6, a seventh channel region CH7, a first source electrode SE1, a second source electrode SE2, a third source electrode SE3, a fourth source electrode SE4, a fifth source electrode SE5, a sixth source electrode SE6, a seventh source electrode SE7, a first drain electrode DE1, a second drain electrode DE2, a third drain electrode DE3, a fourth drain electrode DE4, a fifth drain electrode DE5, a sixth drain electrode DE6 and a seventh drain electrode DE7.

[0127] The first source electrode SE1, the second drain electrode DE2, and the fifth drain electrode DE5 are connected to each other. Figure 4F In the exemplary embodiment shown in , the first source electrode SE1 , the second drain electrode DE2 , and the fifth drain electrode DE5 may be integrally formed as a single indivisible unit.

[0128] like Figure 4F As shown in , the first drain electrode DE1, the third source electrode SE3 and the sixth source electrode SE6 are connected to each other. Figure 4F In the exemplary embodiment shown in , the first drain electrode DE1 , the third source electrode SE3 , and the sixth source electrode SE6 may be integrally formed as a single indivisible unit.

[0129] The third drain electrode DE3 and the fourth drain electrode DE4 are connected to each other. Figure 4F In the exemplary embodiment shown in , the third drain electrode DE3 and the fourth drain electrode DE4 may be integrally formed as a single indivisible unit.

[0130] The sixth drain electrode DE6 and the seventh source electrode SE7 are connected to each other. Figure 4F In the exemplary embodiment shown in , the sixth drain electrode DE6 and the seventh source electrode SE7 may be integrally formed as a single indivisible unit.

[0131] The semiconductor layer 321 may include polycrystalline silicon, amorphous silicon, and an oxide semiconductor such as indium gallium zinc oxide (IGZO) or indium zinc tin oxide (IZTO). For example, in an embodiment where the semiconductor layer 321 includes polycrystalline silicon, the semiconductor layer 321 may include a channel region that is not doped with impurities and a source electrode and a drain electrode that are doped with impurities on opposite sides of the channel region.

[0132] like Figure 5 As shown in FIG. 1 , the gate insulating layer 140 is disposed on the semiconductor layer 321 and the buffer layer 120. In an exemplary embodiment, the gate insulating layer 140 may include tetraethyl orthosilicate (TEOS), silicon nitride (SiN x ) and silicon oxide (SiO 2 ). For example, the gate insulating layer 140 may have a double-layer structure in which SiN x layer and a TEOS layer having a thickness of about 80 nm.

[0133] like Figure 5 As shown in FIG. 1 , the first gate electrode GE1 may be disposed on the gate insulating layer 140 . For example, the first gate electrode GE1 may be located between the gate insulating layer 140 and the first insulating interlayer 150 .

[0134] The second gate electrode GE2, the third gate electrode GE3, the fourth gate electrode GE4, the fifth gate electrode GE5, the sixth gate electrode GE6 and the seventh gate electrode GE7 may also be disposed on the gate insulating layer 140. For example, the second gate electrode GE2, the third gate electrode GE3, the fourth gate electrode GE4, the fifth gate electrode GE5, the sixth gate electrode GE6 and the seventh gate electrode GE7 are located between the gate insulating layer 140 and the first insulating interlayer 150.

[0135] Scan lines and emission control lines are also disposed on the gate insulating layer 140. For example, the n-1th scan line SLn-1, the nth scan line SLn, the n+1th scan line SLn+1, and the emission control line EL may be located between the gate insulating layer 140 and the first insulating interlayer 150.

[0136] like Figures 3 to 5As shown in the figure, the first gate electrode GE1 overlaps with the first channel region CH1 of the semiconductor layer 321, the second gate electrode GE2 overlaps with the second channel region CH2 of the semiconductor layer 321, the third gate electrode GE3 overlaps with the third channel region CH3 of the semiconductor layer 321, the fourth gate electrode GE4 overlaps with the fourth channel region CH4 of the semiconductor layer 321, the fifth gate electrode GE5 overlaps with the fifth channel region CH5 of the semiconductor layer 321, the sixth gate electrode GE6 overlaps with the sixth channel region CH6 of the semiconductor layer 321, and the seventh gate GE7 overlaps with the seventh channel region CH7 of the semiconductor layer 321.

[0137] like Figure 4B and Figure 4F As shown in , the fourth gate electrode GE4 is connected to the n-1th scan line SLn-1. In this embodiment, the fourth gate electrode GE4 may be a portion of the n-1th scan line SLn-1. For example, a portion of the n-1th scan line SLn-1 overlapping the semiconductor layer 321 may correspond to the fourth gate electrode GE4.

[0138] like Figure 4B and Figure 4F As shown in , the third gate electrode GE3 is connected to the nth scan line SLn. In this embodiment, the third gate electrode GE3 may be a portion of the nth scan line SLn. For example, a portion of the nth scan line SLn overlapping the semiconductor layer 321 may correspond to the third gate electrode GE3.

[0139] like Figure 4B and Figure 4F As shown in , the seventh gate electrode GE7 is connected to the n+1th scan line SLn+1. In this embodiment, the seventh gate electrode GE7 may be a portion of the n+1th scan line SLn+1. For example, a portion of the n+1th scan line SLn+1 overlapping the semiconductor layer 321 may correspond to the seventh gate electrode GE7.

[0140] like Figure 4B and Figure 4F As shown in , the fifth gate electrode GE5 and the sixth gate electrode GE6 are commonly connected to one emission control line EL. In this embodiment, the fifth gate electrode GE5 and the sixth gate electrode GE6 may be part of the emission control line EL. For example, two separate parts of the emission control line EL overlapping the semiconductor layer 321 may correspond to the fifth gate electrode GE5 and the sixth gate electrode GE6, respectively.

[0141] In an exemplary embodiment, the scan line (e.g., at least one of the n-1th scan line SLn-1, the nth scan line SLn, and the n+1th scan line SLn+1) may include at least one of aluminum (Al) or its alloy, silver (Ag) or its alloy, copper (Cu) or its alloy, and molybdenum (Mo) or its alloy. Alternatively, the scan line may include chromium (Cr), tantalum (Ta), and / or titanium (Ti). In an exemplary embodiment, the scan line may have a multilayer structure including at least two conductive layers having different physical properties from each other.

[0142] The first gate electrode GE1, the second gate electrode GE2, the third gate electrode GE3, the fourth gate electrode GE4, the fifth gate electrode GE5, the sixth gate electrode GE6, and the seventh gate electrode GE7 may include a material substantially the same as that of the above-mentioned scan line, and have a structure substantially the same as that of the above-mentioned scan line (e.g., a multilayer structure). Each of the gate electrodes GE1, GE2, GE3, GE4, GE5, GE6, and GE7 and the scan line may be formed substantially simultaneously in substantially the same process.

[0143] In addition, the emission control line EL may include a material substantially the same as that of the above-mentioned scan line (e.g., SLn), and have a structure substantially the same as that of the above-mentioned scan line (e.g., SLn) (e.g., a multilayer structure). The emission control line EL and the scan line may be formed substantially simultaneously in substantially the same process.

[0144] like Figure 5 As shown in FIG. 1 , the first insulating interlayer 150 may be disposed on the first gate electrode GE1 and the gate insulating layer 140. In an exemplary embodiment, the first insulating interlayer 150 may have a thickness greater than that of the gate insulating layer 140. The first insulating interlayer 150 may include a material substantially the same as that included in the above-described gate insulating layer 140.

[0145] The first insulating interlayer 150 may also be formed on the second gate electrode GE2, the third gate electrode GE3, the fourth gate electrode GE4, the fifth gate electrode GE5, the sixth gate electrode GE6 and the seventh gate electrode GE7, each scan line (e.g., the scan lines SLn-1, SLn and SLn+1) and the emission control line EL.

[0146] like Figure 5As shown in , the capacitor electrode 201 may be disposed on the first insulating interlayer 150. For example, the capacitor electrode 201 may be located between the first insulating interlayer 150 and the second insulating interlayer 160. The capacitor electrode 201 defines a storage capacitor Cst together with the above-mentioned first gate electrode GE1. For example, the first gate electrode GE1 corresponds to a first electrode of the storage capacitor Cst, and the capacitor electrode 201 corresponds to a second electrode of the storage capacitor Cst. In an exemplary embodiment, a portion of the first gate electrode GE1 overlapping with the capacitor electrode 201 corresponds to the first electrode of the storage capacitor Cst, and a portion of the capacitor electrode 201 overlapping with the first gate electrode GE1 corresponds to the second electrode of the storage capacitor Cst.

[0147] Figure 3 and Figure 4C The initialization line IL shown in FIG. 1 may also be disposed on the first insulating interlayer 150. For example, the initialization line IL may be located between the first insulating interlayer 150 and the second insulating interlayer 160.

[0148] like Figure 3 and Figure 4C As shown in , the capacitor electrode 201 includes a hole 30. In an exemplary embodiment, the hole 30 may have a quadrilateral shape. However, in other embodiments, the shape of the hole 30 may have various other shapes and is not limited to a quadrilateral. For example, the hole 30 may have a circular shape, a triangular shape, etc.

[0149] like Figure 3 and Figure 4C As shown in , the capacitor electrodes 201 of pixels adjacent to each other may be connected to each other. For example, the capacitor electrodes 201 of pixels adjacent to each other in the X-axis direction may be integrally formed as a single indivisible unit.

[0150] like Figure 5 As shown in , the second insulating interlayer 160 may be disposed on the capacitor electrode 201, the initialization line IL, and the first insulating interlayer 150. For example, the second insulating interlayer 160 may be directly disposed on the capacitor electrode 201, the initialization line IL, and the first insulating interlayer 150. In an exemplary embodiment, the second insulating interlayer 160 may have a thickness greater than that of the gate insulating layer 140. The second insulating interlayer 160 may include a material substantially the same as that included in the above-described gate insulating layer 140.

[0151] like Figure 5As shown in FIG. 1 , the first connection electrode 701, the second connection electrode 702, the high potential line VDL, and the data line DL may be disposed on the second insulating interlayer 160. For example, the first connection electrode 701, the second connection electrode 702, the high potential line VDL, and the data line DL may be located between the second insulating interlayer 160 and the planarization layer 180.

[0152] Figure 3 and Figure 4D The third connection electrode 703 shown in FIG. 1 may also be disposed on the second insulating interlayer 160 . For example, the third connection electrode 703 may be located between the second insulating interlayer 160 and the planarization layer 180 .

[0153] like Figure 5 As shown in , the first connection electrode 701 is connected to the sixth drain electrode DE6 through the first contact hole 11 , which is defined by the second insulating interlayer 160 , the first insulating interlayer 150 , and the gate insulating layer 140 .

[0154] like Figure 5 As shown in , the second connection electrode 702 is connected to the first gate electrode GE1 through the second contact hole 12, and the second contact hole 12 is defined by the second insulating interlayer 160 and the first insulating interlayer 150. Figure 3 , Figure 4A and Figure 4D As shown in FIG. 1 , the second connection electrode 702 is connected to the third drain electrode DE3 through the third contact hole 13. The third contact hole 13 is defined by the second insulating interlayer 160, the first insulating interlayer 150, and the gate insulating layer 140 to expose the third drain electrode DE3.

[0155] like Figure 3 , Figure 4A and Figure 4D As shown in FIG. 1 , the third connection electrode 703 is connected to the fourth source electrode SE4 through the fourth contact hole 14. The fourth contact hole 14 is defined by the second insulating interlayer 160, the first insulating interlayer 150, and the gate insulating layer 140 to expose the fourth source electrode SE4. Figure 3 , Figure 4C and Figure 4D As shown in FIG. 1 , the third link electrode 703 is connected to the initialization line IL through the fifth contact hole 15. The fifth contact hole 15 is defined by the second insulating interlayer 160 to expose the initialization line IL.

[0156] like Figure 5 As shown in , the high potential line VDL is connected to the capacitor electrode 201 through the sixth contact hole 16, and the sixth contact hole 16 is defined by the second insulating interlayer 160. Figure 3 , Figure 4A and Figure 4DAs shown in FIG, the high potential line VDL is connected to the fifth source electrode SE5 through the seventh contact hole 17. The seventh contact hole 17 is defined by the second insulating interlayer 160, the first insulating interlayer 150, and the gate insulating layer 140 to expose the fifth source electrode SE5.

[0157] like Figure 3 , Figure 4A and Figure 4D As shown in FIG, the data line DL is connected to the second source electrode SE2 through the eighth contact hole 18. The eighth contact hole 18 is defined by the second insulating interlayer 160, the first insulating interlayer 150, and the gate insulating layer 140 to expose the second source electrode SE2.

[0158] In an exemplary embodiment, the data line DL may include a refractory metal such as molybdenum, chromium, tantalum, and titanium, or an alloy thereof. The data line DL may have a multilayer structure including a refractory metal layer and a low resistance conductive layer. Examples of the multilayer structure may include: a double-layer structure including a chromium or molybdenum (alloy) lower layer and an aluminum (alloy) upper layer; or a three-layer structure including a molybdenum (alloy) lower layer, an aluminum (alloy) middle layer, and a molybdenum (alloy) upper layer. In other exemplary embodiments, the data line DL may include any suitable metal or conductor other than the above materials.

[0159] The first connection electrode 701, the second connection electrode 702, the third connection electrode 703, and the high potential line VDL may include a material substantially the same as that of the data line DL, and may have a structure substantially the same as that of the data line DL (e.g., a multilayer structure). The first connection electrode 701, the second connection electrode 702, the third connection electrode 703, the high potential line VDL, and the data line DL may be formed substantially simultaneously in substantially the same process.

[0160] like Figure 4D and Figure 5 As shown in FIG. 1 , the planarization layer 180 may be disposed on the first connection electrode 701 , the second connection electrode 702 , the third connection electrode 703 , the high potential line VDL, and the data line DL.

[0161] The planarization layer 180 is used to eliminate the height difference in the layer below it. The planarization provided by the planarization layer 180 increases the luminous efficiency of the LED to be arranged thereon. In an exemplary embodiment, the planarization layer 180 may include at least one of polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene (BCB).

[0162] In an exemplary embodiment, the LED may be an OLED. Figure 5As shown in , the LED includes a light emitting layer 512, an anode electrode PE (hereinafter, "pixel electrode"), and a cathode electrode 613 (hereinafter, "common electrode").

[0163] The light emitting layer 512 may include a low molecular weight organic material or a high molecular weight organic material. At least one of a hole injection layer and a hole transport layer may be further disposed between the pixel electrode PE and the light emitting layer 512. At least one of an electron transport layer and an electron injection layer may be further disposed between the light emitting layer 512 and the common electrode 613.

[0164] like Figure 5 As shown in FIG. 1 , the pixel electrode PE may be disposed on the planarization layer 180. A portion or all of the pixel electrode PE may be located in the light emitting region 900. For example, the pixel electrode PE may be located corresponding to the light emitting region 900 defined by the light blocking layer 190 to be described below. Figure 3 and Figure 5 As shown in , the pixel electrode PE is connected to the first connection electrode 701 through a ninth contact hole 19 , and the ninth contact hole 19 is defined by the planarization layer 180 .

[0165] exist Figure 3 and Figure 4E In the exemplary embodiment shown in , the pixel electrode PE may have a rhombus shape. However, in other exemplary embodiments, the pixel electrode PE may have one of various shapes such as a quadrangular shape.

[0166] like Figure 5 As shown in FIG. 1 , the light blocking layer 190 may be disposed on the pixel electrode PE and the planarization layer 180. The light blocking layer 190 has an opening 900, and the opening 900 is defined by the light blocking layer 190. The opening 900 corresponds to the light emitting region 900. Figure 3 and Figure 4G In the exemplary embodiment shown in , the light emitting region 900 may have a rhombus shape. However, in other exemplary embodiments, the light emitting region 900 may have one of various shapes such as a quadrilateral shape. The size of the light emitting region 900 may be smaller than the size of the pixel electrode PE as described above. At least a portion of the pixel electrode PE is located in the light emitting region 900. In this embodiment, the entirety of the light emitting region 900 overlaps with the pixel electrode PE.

[0167] In an exemplary embodiment, the light blocking layer 190 may include a resin such as a polyacrylate resin, a polyimide resin, or the like.

[0168] The spacer 422 may be disposed on the light blocking layer 190. The spacer 422 may include or be formed of a material substantially the same as a material included in the light blocking layer 190. The spacer 422 serves to substantially minimize a height difference between a layer located in the display region 100a of the substrate 100 and a layer located in the non-display region 100b of the substrate 100.

[0169] The light emitting layer 512 may be disposed on the pixel electrode PE in the light emitting region 900. The common electrode 613 may be disposed on the light blocking layer 190 and the light emitting layer 512.

[0170] The pixel electrode PE and the common electrode 613 may be formed as one of a transmissive electrode, a transflective electrode, and a reflective electrode.

[0171] In an exemplary embodiment, the transmissive electrode may include a transparent conductive oxide ("TCO"). The TCO may include at least one of indium tin oxide ("ITO"), indium zinc oxide ("IZO"), antimony tin oxide ("ATO"), aluminum zinc oxide ("AZO"), zinc oxide ("ZnO"), and mixtures thereof.

[0172] In an exemplary embodiment, the transflective electrode and the reflective electrode may include a metal, for example, magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr), aluminum (Al), and copper (Cu) or an alloy thereof. In this embodiment, the thickness of the electrode may determine whether the electrode is a transflective type or a reflective type. For example, the transflective electrode has a thickness of about 200 nm or less. In contrast, the reflective electrode has a thickness of about 300 nm or more. As the thickness of the transflective electrode decreases, the transmittance and resistance increase. As the thickness of the transflective electrode increases, the transmittance decreases.

[0173] In this embodiment, the transflective electrode and the reflective electrode may have a multi-layer structure including a metal layer including a metal or a metal alloy and a TCO layer stacked on the metal layer.

[0174] The cover layer 810 may be disposed on the common electrode 613. The cover layer 810 may be disposed on the common electrode 613 to overlap the entire surface of the substrate 100. In this embodiment, the cover layer 810 may be disposed between the common electrode 613 and the protective layer 820. In an exemplary embodiment, the cover layer 810 may be an organic layer including an organic material.

[0175] The protective layer 820 may be disposed on the cover layer 810. For example, the protective layer 820 may be directly disposed on the cover layer 810. The protective layer 820 may be disposed on the cover layer 810 to overlap the entire surface of the substrate 100. In this embodiment, the protective layer 820 may be disposed between the cover layer 810 and the sealing portion 750. In an exemplary embodiment, the protective layer 820 may include LiF.

[0176] However, in some exemplary embodiments, at least one of the cover layer 810 and the protection layer 820 may be omitted.

[0177] The sealing portion 750 may be disposed on the protective layer 820. The sealing portion 750 may include a transparent insulating substrate. In an exemplary embodiment, the transparent insulating substrate may be glass, transparent plastic, etc. In addition, the sealing portion 750 may be formed to have a thin film encapsulation structure in which one or more inorganic layers and one or more organic layers are alternately disposed in a stacked structure (e.g., along the Z-axis direction). For example, Figure 5 As shown in the exemplary embodiment of , the sealing portion 750 may include a lower inorganic layer 751, an organic layer 755 and an upper inorganic layer 752. The organic layer 755 is disposed between the lower inorganic layer 751 and the upper inorganic layer 752 (e.g., in the Z-axis direction). However, in an alternative embodiment, the sealing portion 750 may include different numbers of inorganic layers and organic layers that may be arranged in various different ways. In addition, the inorganic layer and / or the organic layer may have multiple sublayers.

[0178] In an exemplary embodiment, the organic layer 755 may have a greater thickness than the lower inorganic layer 751 and the upper inorganic layer 752. The lower inorganic layer 751 and the upper inorganic layer 752 may have substantially equal thicknesses. For example, at least one of the lower inorganic layer 751 and the upper inorganic layer 752 may have a thickness of about 100 nm. to about , where the thickness refers to the length from the top surface of the layer to the bottom surface of the layer in the Z-axis direction. However, in alternative embodiments, the thickness of the lower inorganic layer 751, the upper inorganic layer 752, and the organic layer 755 may vary. For example, the organic layer 755 may have a thickness substantially equal to that of one or more inorganic layers, or one or more inorganic layers may have a thickness greater than another inorganic layer or organic layer.

[0179] The lower inorganic layer 751 and the upper inorganic layer 752 may include or be formed of a material substantially the same as a material included in the above-described second layer 112 .

[0180] The organic layer 755 may include or be formed of a material substantially the same as a material included in the first layer 111. In addition, the organic layer 755 may include a monomer.

[0181] Figure 6 It is shown Figure 5 Magnified view of part A in FIG.

[0182] At least one inorganic layer included in the sealing portion 750 may include hydrogen and SiON (such as hydrogenated silicon oxynitride (SiON:H)). Figure 6 In the exemplary embodiment shown in FIG. 7 , at least one of the lower inorganic layer 751 and the upper inorganic layer 752 may include SiON:H.

[0183] In an exemplary embodiment, the inorganic layer provided only at the uppermost portion of the plurality of inorganic layers included in the sealing portion 750 (hereinafter, "uppermost inorganic layer") may include SiON:H. Figure 6 In the exemplary embodiment shown in , only the upper inorganic layer 752 corresponding to the uppermost inorganic layer may include SiON:H, while the lower inorganic layer 751 does not include SiON:H.

[0184] At least one inorganic layer included in the sealing portion 750 may include each of silicon (Si), oxygen (O), nitrogen (N), and hydrogen (H). For example, Figure 6 At least one of the lower inorganic layer 751 and the upper inorganic layer 752 of the exemplary embodiment shown in may include each of silicon, oxygen, nitrogen, and hydrogen. In an exemplary embodiment, the upper inorganic layer 752 as the uppermost inorganic layer may include silicon, nitrogen, hydrogen, and oxygen.

[0185] In an exemplary embodiment, at least one of the lower inorganic layer 751 and the upper inorganic layer 752 including each of silicon, oxygen, nitrogen, and hydrogen may have a chemical composition in which a silicon content is about 30-40 atomic percent (at%), an oxygen content is about 15-35 at%, a nitrogen content is about 10-20 at%, and a hydrogen content is 20-30 at%. For example, the silicon content may be about 35 at%, the oxygen content may be about 25 at%, the nitrogen content may be about 15 at%, and the hydrogen content may be about 25 at%.

[0186] The upper inorganic layer 752 having a silicon content of about 30-40 at%, an oxygen content of about 15-35 at%, a nitrogen content of about 10-20 at%, and a hydrogen content of about 20-30 at% may have a refractive index in the range of about 1.47 to about 1.70. For example, the upper inorganic layer 752 having a silicon content of about 35 at%, an oxygen content of about 25 at%, a nitrogen content of about 15 at%, and a hydrogen content of about 25 at% may have a refractive index in the range of about 1.47 to about 1.70.

[0187] The upper inorganic layer 752 having such a chemical composition ratio substantially minimizes the deviation in the light transmittance variation according to the wavelength of light transmitted from the light emitting layer 512, which will be referred to as Figure 7 Detailed description.

[0188] Figure 7 is a graph showing changes in light transmittance of the upper inorganic layer according to the wavelength of light.

[0189] The first curve C1 represents the light transmittance of the upper inorganic layer 752 that is not irradiated with sunlight according to the wavelength of light transmitted from the light emitting layer 512. The second curve C2 represents the light transmittance of the upper inorganic layer 752 that is irradiated with sunlight for 1 hour according to the wavelength of light transmitted from the light emitting layer 512. The third curve C3 represents the light transmittance of the upper inorganic layer 752 that is irradiated with sunlight for 3 hours according to the wavelength of light transmitted from the light emitting layer 512. The fourth curve C4 represents the light transmittance of the upper inorganic layer 752 that is irradiated with sunlight for 6 hours according to the wavelength of light transmitted from the light emitting layer 512.

[0190] As used herein, transmittance means transmittance relative to light emitted from the light emitting layer 512. For example, the transmittance in the blue light wavelength region BB means the transmittance of the upper inorganic layer 752 relative to blue light emitted from the blue light emitting layer, the transmittance in the green light wavelength region GG means the transmittance of the upper inorganic layer 752 relative to green light emitted from the green light emitting layer, and the transmittance in the red light wavelength region RR means the transmittance of the upper inorganic layer 752 relative to red light emitted from the red light emitting layer.

[0191] like Figure 7As shown in , there is a difference in the light transmittance of the upper inorganic layer 752 when the upper inorganic layer 752 is irradiated with sunlight for 1 hour compared to the upper inorganic layer 752 that is not irradiated with sunlight. The difference in light transmittance indicated by the first curve C1 and the second curve C2 in the blue light wavelength region BB (hereinafter, “blue light transmittance change”), the difference in light transmittance indicated by the first curve C1 and the second curve C2 in the green light wavelength region GG (hereinafter, “green light transmittance change”), and the difference in light transmittance indicated by the first curve C1 and the second curve C2 in the red light wavelength region RR (hereinafter, “red light transmittance change”) are substantially equal to each other. For example, in the blue wavelength region BB, the transmittance of the second curve C2 is about 0.4% greater than the transmittance of the first curve C1 on average; in the green wavelength region GG, the transmittance of the second curve C2 is about 0.2% greater than the transmittance of the first curve C1 on average; in the red wavelength region RR, the transmittance of the second curve C2 is about 0.2% greater than the transmittance of the first curve C1 on average. Curve C3 representing the transmittance of the upper inorganic layer 752 irradiated with sunlight for 3 hours and curve C4 representing the transmittance of the upper inorganic layer 752 irradiated with sunlight for 6 hours are both similar to curve C2. Therefore, the difference between the transmittances represented by curves C3 and C4 compared to curve C1 is similar to the difference between the transmittances of curves C2 and C1. For example, in the blue light wavelength region BB, the transmittance of the third curve C3 and the fourth curve C4 is about 0.4% greater than the transmittance of the first curve C1 on average; in the green light wavelength region GG, the transmittance of the third curve C3 and the fourth curve C4 is about 0.2% greater than the transmittance of the first curve C1 on average; in the red light wavelength region RR, the transmittance of the third curve C3 and the fourth curve C4 is about 0.2% greater than the transmittance of the first curve C1 on average.

[0192] Therefore, a deviation in a light transmittance variation according to a wavelength of sunlight may be substantially minimized in the upper inorganic layer 752. Therefore, color unevenness of an image displayed by the display device due to sunlight exposure may be substantially minimized.

[0193] Figure 8 is shown for performing manufacturing according to Figure 6 An embodiment of the method of showing an apparatus is a front view of the device.

[0194] Figure 8 The deposition device 8000 may be a chemical vapor deposition (CVD) device. Figure 8The deposition device 8000 may include a chamber 8100, a stage 8200, a gas mixing unit 8300, a gas injection unit 8400, a first gas supply unit 8001, a second gas supply unit 8002, a third gas supply unit 8003, a fourth gas supply unit 8004, a fifth gas supply unit 8005, a first gas supply pipe 8501, a second gas supply pipe 8502, a third gas supply pipe 8503, a fourth gas supply pipe 8504, a fifth gas supply pipe 8505, a first flow rate controller 8701, a second flow rate controller 8702, a third flow rate controller 8703, a fourth flow rate controller 8704 and a fifth flow rate controller 8705.

[0195] The stage 8200, the gas mixing unit 8300, and the gas injection unit 8400 may be disposed in the chamber 8100. However, in other exemplary embodiments, the gas mixing unit 8300 or the gas injection unit 8400 may be disposed outside the chamber 8100.

[0196] The first gas supply unit 8001, the second gas supply unit 8002, the third gas supply unit 8003, the fourth gas supply unit 8004, the fifth gas supply unit 8005, the first gas supply pipe 8501, the second gas supply pipe 8502, the third gas supply pipe 8503, the fourth gas supply pipe 8504, the fifth gas supply pipe 8505, the first flow rate controller 8701, the second flow rate controller 8702, the third flow rate controller 8703, the fourth flow rate controller 8704, and the fifth flow rate controller 8705 may be disposed outside the chamber 8100. However, in other exemplary embodiments, one or more of these devices may be disposed within the chamber 8100.

[0197] The stage 8200 supports the substrate 100. In other words, the substrate 100 is placed in a position within the chamber 8100 such that it is disposed on the stage 8200. In an exemplary embodiment, a portion of a layer of the sealing portion 750 may be disposed on the substrate 100 before the substrate 100 is placed within the chamber 8100. For example, in an embodiment, at least one of the lower inorganic layer 751 and the organic layer 755 may be disposed on the substrate 100 before the substrate 100 is placed within the chamber 8100.

[0198] The first gas supply unit 8001 can supply SiH 4 The first gas supply unit 8001 may include a first storage unit, and SiH 4 The gas may be stored in the first storage unit in a gaseous form.

[0199] The second gas supply unit 8002 can supply NH 3The second gas supply unit 8002 may include a second storage unit, and NH 3 The gas may be stored in the second storage unit.

[0200] The third gas supply unit 8003 can supply N 2 O. The third gas supply unit 8003 may include a third storage unit, and N 2 O may be stored in the third storage unit in a gaseous form.

[0201] The fourth gas supply unit 8004 can supply N 2 The fourth gas supply unit 8004 may include a fourth storage unit, and N 2 The gas may be stored in the fourth storage unit.

[0202] The fifth gas supply unit 8005 can supply H 2 The fifth gas supply unit 8005 may include a fifth storage unit, and H 2 It can be stored in the fifth storage unit in the form of gas.

[0203] Although the exemplary embodiment describes that the inorganic layer including each of silicon (Si), oxygen (O), nitrogen (N), and hydrogen (H) is formed by using 4 NH 3 、N 2 O、N 2 and H 2 The silicon, oxygen, nitrogen, and hydrogen may be provided from a mixed gas provided by various other gas combinations, although in other exemplary embodiments the silicon, oxygen, nitrogen, and hydrogen may be provided from a mixed gas provided by various other gas combinations.

[0204] The first gas supply pipe 8501 is connected to the first gas supply unit 8001 and the gas mixing unit 8300. For example, one end of the first gas supply pipe 8501 is connected to the first gas supply unit 8001, and the other end of the first gas supply pipe 8501 is connected to the gas mixing unit 8300. The first gas supply pipe 8501 transfers SiH 4 The gas is supplied from the first gas supply unit 8001 to the gas mixing unit 8300. The SiH 4 The gas may flow into the gas mixing unit 8300 through the first gas supply pipe 8501. In this embodiment, SiH 4 The flow rate of the gas may be, for example, in a range from about 495 standard cubic centimeters per minute (sccm) to about 1485 sccm. In another exemplary embodiment, the SiH 4The flow rate of the gas is in a range from about 740 sccm to about 1240 sccm.

[0205] The second gas supply pipe 8502 is connected to the second gas supply unit 8002 and the gas mixing unit 8300. For example, one end of the second gas supply pipe 8502 is connected to the second gas supply unit 8002, and the other end of the second gas supply pipe 8502 is connected to the gas mixing unit 8300. The second gas supply pipe 8502 is connected to the second gas supply unit 8002. 3 The gas is supplied from the second gas supply unit 8002 to the gas mixing unit 8300. NH 3 The gas may flow into the gas mixing unit 8300 through the second gas supply pipe 8502. In this embodiment, the NH 3 The flow rate of the gas may be, for example, in the range of about 250 sccm to about 750 sccm. In another exemplary embodiment, NH 3 The flow rate of the gas is in a range from about 350 sccm to about 600 sccm.

[0206] The third gas supply pipe 8503 is connected to the third gas supply unit 8003 and the gas mixing unit 8300. For example, one end of the third gas supply pipe 8503 is connected to the third gas supply unit 8003, and the other end of the third gas supply pipe 8503 is connected to the gas mixing unit 8300. 2 O gas is supplied from the third gas supply unit 8003 to the gas mixing unit 8300. N 2 O gas can flow into the gas mixing unit 8300 through the third gas supply pipe 8503. In this embodiment, N 2 The flow rate of the O gas may be, for example, in a range from about 1330 sccm to about 3990 sccm. In another exemplary embodiment, the N 2 The flow rate of the O gas is about 2000 sccm to about 3320 sccm.

[0207] In an embodiment, N 2 The flow rate of O gas can be NH 3 The flow rate of the gas is about five times or more. For example, as described above, when NH 3 When the flow rate of the gas is in the range of about 250 sccm to about 750 sccm, N 2 The flow rate of the O gas may be in the range of about 1350 sccm to about 3750 sccm. In other words, the N 2The O gas may be supplied to the gas mixing unit 8300 at a flow rate in the range of about 1350 sccm to about 3750 sccm.

[0208] The fourth gas supply pipe 8504 is connected to the fourth gas supply unit 8004 and the gas mixing unit 8300. For example, one end of the fourth gas supply pipe 8504 is connected to the fourth gas supply unit 8004, and the other end of the fourth gas supply pipe 8504 is connected to the gas mixing unit 8300. 2 The gas is supplied from the fourth gas supply unit 8004 to the gas mixing unit 8300. 2 The gas may flow into the gas mixing unit 8300 through the fourth gas supply pipe 8504. In this embodiment, the N 2 The flow rate of the gas may be, for example, in the range of about 4930 sccm to about 14790 sccm. In another exemplary embodiment, N 2 The flow rate of the gas is about 7395 seem to about 12325 seem.

[0209] The fifth gas supply pipe 8505 is connected to the fifth gas supply unit 8005 and the gas mixing unit 8300. For example, one end of the fifth gas supply pipe 8505 is connected to the fifth gas supply unit 8005, and the other end of the fifth gas supply pipe 8505 is connected to the gas mixing unit 8300. The fifth gas supply pipe 8505 is connected to the gas mixing unit 8300. 2 The gas is supplied from the fifth gas supply unit 8005 to the gas mixing unit 8300. The H from the fifth gas supply unit 8005 2 The gas may flow into the gas mixing unit 8300 through the fifth gas supply pipe 8505. In this embodiment, the H in the fifth gas supply pipe 8505 2 The flow rate of the gas may be, for example, in the range of from about 5635 sccm to about 16905 sccm. In another exemplary embodiment, H 2 The flow rate of the gas may be about 8450 sccm to about 14085 sccm.

[0210] The first flow rate controller 8701 may be disposed at a portion of the first gas supply pipe 8501. The first flow rate controller 8701 controls the SiH flowing along the first gas supply pipe 8501. 4 The flow rate of the gas. For example, SiH 4 The gas may flow along the first gas supply pipe 8501 at a flow rate in the aforementioned range from about 495 sccm to about 1485 sccm through the first flow rate controller 8701 .

[0211] The second flow rate controller 8702 may be provided at a portion of the second gas supply pipe 8502. The second flow rate controller 8702 controls the NH flowing along the second gas supply pipe 8502. 3 The flow rate of the gas. For example, NH 3 The gas may flow along the second gas supply pipe 8502 through the second flow rate controller 8702 at a flow rate in the aforementioned range from about 250 sccm to about 750 sccm.

[0212] The third flow rate controller 8703 may be provided at a portion of the third gas supply pipe 8503. The third flow rate controller 8703 controls the N flowing along the third gas supply pipe 8503. 2 O gas flow rate. For example, N 2 The O gas may flow along the third gas supply pipe 8503 at a flow rate in the aforementioned range from about 1330 sccm to about 3990 sccm through the third flow rate controller 8703 .

[0213] The fourth flow rate controller 8704 may be disposed at a portion of the fourth gas supply pipe 8504. The fourth flow rate controller 8704 controls the N flowing along the fourth gas supply pipe 8504. 2 The flow rate of the gas. For example, N 2 The gas may flow along the fourth gas supply pipe 8504 through the fourth flow rate controller 8704 at a flow rate in the aforementioned range from about 4930 sccm to about 14790 sccm.

[0214] The fifth flow rate controller 8705 may be provided at a portion of the fifth gas supply pipe 8505. The fifth flow rate controller 8705 controls the H flowing along the fifth gas supply pipe 8505. 2 The flow rate of the gas. For example, H 2 The gas may flow along the fifth gas supply pipe 8505 at a flow rate in the aforementioned range of about 5635 sccm to about 16905 sccm through the fifth flow rate controller 8705. However, in certain exemplary embodiments, one or more supply pipes or flow rate controllers may be combined with another supply pipe or flow rate controller and may not be independent.

[0215] SiH from the first gas supply pipe 8501 4 gas, NH from the second gas supply pipe 8502 3 gas, N from the third gas supply pipe 8503 2 O gas, N from the fourth gas supply pipe 8504 2 gas and H from the fifth gas supply pipe 8505 2The gases are mixed together in the gas mixing unit 8300. The mixed gas delivered to the gas injection unit 8400 is sprayed (e.g., injected) onto the substrate 100 through the gas injection unit 8400. For example, the mixed gas is sprayed onto the organic layer 755. The mixed gas is sprayed onto the substrate 100 from the lower surface of the gas injection unit 8400. However, in other embodiments, the gas injection unit 8400 may be located on the side of the substrate 100 or below the substrate 100, and the mixed gas is sprayed onto the substrate 100 from the side surface of the gas injection unit 8400 or the upper surface of the gas injection unit 8400, respectively.

[0216] The gas injection unit 8400 may include a nozzle. The nozzle sprays the mixed gas from the gas mixing unit 8300 toward the substrate 100. In such an embodiment, the distance d1 between the gas injection unit 8400 and the substrate 100 may be, for example, in the range of about 475 mils to about 1425 mils. As an example, the distance d1 between the gas injection unit 8400 and the substrate 100 may be about 950 mils. In an exemplary embodiment, the distance d2 instead of the distance d1 may be, for example, in the range of from about 475 mils to 1425 mils, or more specifically, about 950 mils. In an exemplary embodiment, the distance d2 may be defined as the distance between the gas injection unit 8400 and the uppermost layer (e.g., the organic layer 755) located farthest from the substrate 100 among the layers disposed on the substrate 100.

[0217] In an exemplary embodiment, a plasma gas is included between the gas injection unit 8400 and the substrate 100, and the mixed gas passes through the plasma gas to be deposited on the organic layer 755. The radio frequency (RF) power of the power supply of the chamber 8100 can be used to generate the above-mentioned plasma gas. The RF frequency can be, for example, in the range from about 1600 W to about 4800 W. For example, the RF power can be about 3200 W.

[0218] When the mixed gas injected from the gas injection unit 8400 is deposited on the organic layer 755, an upper inorganic layer 752 including SiON:H is formed on the organic layer 755. In this embodiment, the upper inorganic layer 752 includes silicon (Si), oxygen (O), nitrogen (N), and hydrogen (H), and the content of silicon, the content of oxygen, the content of nitrogen, and the content of hydrogen may be about 30-40at%, about 15-35at%, about 10-20at%, and about 20-30at%, respectively. For example, the silicon content may be about 35at%, the oxygen content may be about 25at%, the nitrogen content may be about 15at%, and the hydrogen content may be about 25at%.

[0219] The internal pressure of the chamber 8100 may be, for example, in the range of about 600 mTorr to about 1800 mTorr. For example, the internal pressure of the chamber 8100 may be about 1200 mTorr. In other words, the internal pressure of the chamber 8100 generated by the mixed gas supplied to the chamber 8100 at the above flow rate may be about 1200 mTorr.

[0220] In an exemplary embodiment, the lower inorganic layer 751 may also be manufactured in the same manner as the upper inorganic layer 752 described above. The lower inorganic layer 751 may be made of SiH deposited on a substrate in a chamber. 4 Gas, NH 3 Gas, N 2 O gas, N 2 Gas and H 2 The lower inorganic layer 751 is manufactured by mixing the gas of the gas injection unit 8400 and the substrate 100. In this embodiment, the flow rate of each gas, the distance d1 or d2 between the gas injection unit 8400 and the substrate 100, the RF power of the power supply of the chamber 8100, and the internal pressure of the chamber 8100 can have the above values, respectively. However, if the stage 8200 is not adjusted, the distance d2 between the gas injection unit 8400 and the uppermost layer when depositing the lower inorganic layer 751 will be larger (for example, larger by an amount equal to the thickness of the organic layer 755) compared to the upper inorganic layer 752. In an exemplary embodiment, when manufacturing the lower inorganic layer 751, SiH 4 The flow rate of the gas may be in the range of about 495 sccm to about 1485 sccm. 3 The flow rate of the gas may be in the range of from about 250 sccm to about 750 sccm. 2 The flow rate of the O gas may be in the range of about 1330 sccm to about 3990 sccm, and the N 2 The flow rate of the gas may be in the range of from about 4930 sccm to about 14790 sccm. 2 The flow rate of the gas may be in a range from about 5635 sccm to about 16905 sccm, the distance d1 or d2 between the gas injection unit 8400 and the substrate 100 may be in a range from about 475 mils to about 1425 mils (or about 950 mils), the RF power of the chamber 8100 may be in a range from about 1600 W to about 4800 W (or about 3200 W), and the internal pressure of the chamber 8100 may be in a range from about 600 mTorr to about 1800 mTorr (or about 1200 mTorr). In addition, the composition ratios of silicon, oxygen, nitrogen, and hydrogen included in the lower inorganic layer 751 may be substantially the same as the composition ratios of silicon, oxygen, nitrogen, and hydrogen included in the upper inorganic layer 752 described above, respectively. However, in an alternative embodiment, the composition and composition ratio of the lower inorganic layer 751 and the upper inorganic layer 752 may be different.

[0221] Fig. 9 is a diagram showing a method according to another exemplary embodiment Figure 5 Magnified view of part A in FIG.

[0222] Included in Fig. 9 At least one inorganic layer in the sealing portion 750 shown in the figure may include hydrogen and SiON. For example, at least one inorganic layer included in the sealing portion 750 may include SiON:H. In an exemplary embodiment, at least one of the lower inorganic layer 751 and the upper inorganic layer 752 may include SiON:H. In this embodiment, the upper inorganic layer 752 as the uppermost inorganic layer may include at least two sub-inorganic layers 752a and 752b. For example, the upper inorganic layer 752 may include a first sub-inorganic layer 752a and a second sub-inorganic layer 752b. The second sub-inorganic layer 752b may be used as a barrier to prevent moisture from penetrating into the first sub-inorganic layer 752a.

[0223] In an exemplary embodiment, only the uppermost inorganic layer may include SiON: H. For example, only the upper inorganic layer 752 corresponding to the uppermost inorganic layer of the lower inorganic layer 751 and the upper inorganic layer 752 may include SiON: H. As a more specific example, only the first sub-inorganic layer 752a of the upper inorganic layer 752 as the uppermost inorganic layer may include SiON: H.

[0224] At least one inorganic layer included in the sealing portion 750 may include silicon (Si), oxygen (O), nitrogen (N), and hydrogen (H). For example, at least one of the lower inorganic layer 751 and the upper inorganic layer 752 may include silicon, oxygen, nitrogen, and hydrogen. In an exemplary embodiment, only the first sub-inorganic layer 752a of the upper inorganic layer 752 as the uppermost inorganic layer may include silicon, oxygen, nitrogen, and hydrogen.

[0225] The first sub-inorganic layer 752a may have the following chemical composition, wherein the silicon content, oxygen content, nitrogen content, and hydrogen content included in the first sub-inorganic layer 752a may be approximately 30-40 at%, approximately 15-35 at%, approximately 10-20 at%, and approximately 20-30 at%, respectively. For example, in the first sub-inorganic layer 752a, the silicon content may be approximately 30-40 at%, the oxygen content may be approximately 15-35 at%, the nitrogen content may be approximately 10-20 at%, and the hydrogen content may be approximately 20-30 at%. In an exemplary embodiment, in the first sub-inorganic layer 752a, the silicon content may be approximately 35 at%, the oxygen content may be approximately 25 at%, the nitrogen content may be approximately 15 at%, and the hydrogen content may be approximately 25 at%.

[0226] The first sub-inorganic layer 752a having such a chemical composition ratio may have a refractive index in the range of about 1.47 to about 1.70. As an example, the first sub-inorganic layer 752a having a silicon content of about 30-40 at%, an oxygen content of about 15-35 at%, a nitrogen content of about 10-20 at%, and a hydrogen content of about 20-30 at% may have a refractive index in the range of about 1.47 to about 1.70. As another example, the first sub-inorganic layer 752a having a silicon content of about 35 at%, an oxygen content of about 25 at%, a nitrogen content of about 15 at%, and a hydrogen content of about 25 at% may have a refractive index in the range of about 1.47 to about 1.70.

[0227] In an exemplary embodiment, the first inorganic sub-layer 752a may be Figure 6 The upper inorganic layer 752 is basically the same.

[0228] The second sub-inorganic layer 752 b of the upper inorganic layer 752 , which is an uppermost inorganic layer, may be disposed on the first sub-inorganic layer 752 a .

[0229] In an exemplary embodiment, the second inorganic sub-layer 752b may include hydrogenated silicon nitride (SiN x :H).

[0230] The second sub-inorganic layer 752 b may include silicon (Si), nitrogen (N), and hydrogen (H). In an exemplary embodiment, the second sub-inorganic layer 752 b does not include oxygen (O).

[0231] The second sub-inorganic layer 752b may have the following chemical composition. For example, the silicon content, nitrogen content, and hydrogen content included in the second sub-inorganic layer 752b may be about 30-50at%, about 30-50at%, and about 20-30at%, respectively. For example, in the second sub-inorganic layer 752b, the silicon content may be about 30-50at%, the nitrogen content may be about 30-50at%, and the hydrogen content may be about 20-30at%. In an exemplary embodiment, in the second sub-inorganic layer 752b, the silicon content may be about 40at%, the nitrogen content may be about 40at%, and the hydrogen content may be about 20at%. As another example, in the second sub-inorganic layer 752b, the silicon content may be about 30at%, the nitrogen content may be about 50at%, and the hydrogen content may be about 20at%.

[0232] The second sub-inorganic layer 752b having such a chemical composition ratio may have a refractive index higher than that of the first sub-inorganic layer 752a described above. For example, the second sub-inorganic layer 752b may have a refractive index in the range of about 1.70 to about 2.10. In an exemplary embodiment, the second sub-inorganic layer 752b may have a refractive index of about 1.89. For example, the second sub-inorganic layer 752b having a silicon content of about 30-50at%, a nitrogen content of about 30-50at%, and a hydrogen content of about 20-30at% may have a refractive index of about 1.89. In another example, the second sub-inorganic layer 752b having a silicon content of about 40at%, a nitrogen content of about 40at%, and a hydrogen content of about 20at% may have a refractive index of about 1.89. As another example, the second sub-inorganic layer 752 b having a silicon content of about 30 at %, a nitrogen content of about 50 at %, and a hydrogen content of about 20 at % may have a refractive index of about 1.89.

[0233] By using at least one of the first sub-inorganic layer 752a and the second sub-inorganic layer 752b having such a chemical composition ratio, the sealing portion 750 makes Figure 7 The deviation of the light transmittance variation according to the wavelength of light emitted from the light emitting layer 512 shown in FIG. 5 is substantially minimized.

[0234] In an exemplary embodiment, the first sub-inorganic layer 752a may have a thickness ranging from about to about The second inorganic sub-layer 752b may have a thickness substantially equal to or less than about However, exemplary embodiments are not limited thereto, and the first and second sub-inorganic layers 752a and 752b may have thicknesses of approximately the same size, or the second sub-inorganic layer 752b may have a thickness greater than that of the first sub-inorganic layer 752a.

[0235] Fig.10 is a diagram showing a method according to another exemplary embodiment Figure 5 Magnified view of part A in FIG.

[0236] Included in Fig.10At least one inorganic layer in the sealing portion 750 shown in may include hydrogen and SiON, such as SiON:H. For example, at least one of the lower inorganic layer 751 and the upper inorganic layer 752 may include SiON:H. In this embodiment, the upper inorganic layer 752 as the uppermost inorganic layer may include at least two sub-inorganic layers. For example, the upper inorganic layer 752 may include three sub-inorganic layers, the three sub-inorganic layers including a first sub-inorganic layer 752a, a second sub-inorganic layer 752b, and a third sub-inorganic layer 752c. The third sub-inorganic layer 752c may be used to protect the organic layer 755 disposed below the first sub-inorganic layer 752a during the deposition of the first sub-inorganic layer 752a. Damage to the organic layer 755 caused by the deposition of the first sub-inorganic layer 752a can be substantially minimized by the third sub-inorganic layer 752c.

[0237] Fig.10 The first inorganic sub-layer 752a and the second inorganic sub-layer 752b are respectively Fig. 9 The first inorganic sub-layer 752a and the second inorganic sub-layer 752b are substantially the same. Fig.10 The description of the first inorganic sub-layer 752a and the second inorganic sub-layer 752b will refer to the above reference Fig. 9 Description.

[0238] The third sub-inorganic layer 752c of the upper inorganic layer 752 as the uppermost inorganic layer may be disposed under the first sub-inorganic layer 752a. For example, the third sub-inorganic layer 752c may be disposed between the organic layer 755 and the first sub-inorganic layer 752a.

[0239] The third inorganic sub-layer 752c may include hydrogenated silicon nitride (SiN x :H).

[0240] The third sub-inorganic layer 752c may include silicon (Si), nitrogen (N), and hydrogen (H).

[0241] The third sub-inorganic layer 752c may have a chemical composition in which a silicon content may be about 30-50 at%, a nitrogen content may be about 30-50 at%, and a hydrogen content may be about 20-30 at%. For example, in the third sub-inorganic layer 752c, a silicon content may be about 40 at%, a nitrogen content may be about 40 at%, and a hydrogen content may be about 20 at%. In another example, in the third sub-inorganic layer 752c, a silicon content may be about 30 at%, a nitrogen content may be about 50 at%, and a hydrogen content may be about 20 at%.

[0242] The third sub-inorganic layer 752c having such a chemical composition ratio may have a refractive index higher than that of the first sub-inorganic layer 752a described above. For example, the third sub-inorganic layer 752c may have a refractive index in the range of about 1.70 to about 2.10. The third sub-inorganic layer 752c may have a refractive index of about 1.85. The third sub-inorganic layer 752c having a silicon content of about 30-50at%, a nitrogen content of about 30-50at%, and a hydrogen content of about 20-30at% may have a refractive index of about 1.85. The third sub-inorganic layer 752c having a silicon content of about 40at%, a nitrogen content of about 40at%, and a hydrogen content of about 20at% may have a refractive index of about 1.85. The third sub-inorganic layer 752c having a silicon content of about 30at%, a nitrogen content of about 50at%, and a hydrogen content of about 20at% may have a refractive index of about 1.85.

[0243] The chemical composition ratio of the third sub-inorganic layer 752c may be substantially the same as the chemical composition ratio of the second sub-inorganic layer 752b described above. However, the second sub-inorganic layer 752b and the third sub-inorganic layer 752c are manufactured under different conditions. For example, the second sub-inorganic layer 752b and the third sub-inorganic layer 752c may be manufactured at different RF power levels and different air pressure levels. Therefore, the density (or film density) of the second sub-inorganic layer 752b may be different from the density (or film density) of the third sub-inorganic layer 752c. For example, the density of the second sub-inorganic layer 752b may be greater than the density of the third sub-inorganic layer 752c. Due to the density difference, even if the second sub-inorganic layer 752b and the third sub-inorganic layer 752c include substantially the same material and have substantially the same chemical composition ratio, the refractive index of the second sub-inorganic layer 752b may be different from the refractive index of the third sub-inorganic layer 752c. For example, the refractive index of the second sub-inorganic layer 752 b may be higher than the refractive index of the third sub-inorganic layer 752 c .

[0244] In an embodiment, the density of the first sub-inorganic layer 752 a may be greater than the density of the third sub-inorganic layer 752 c , and less than the density of the second sub-inorganic layer 752 b .

[0245] By using at least one of the first sub-inorganic layer 752a, the second sub-inorganic layer 752b, and the third sub-inorganic layer 752c having such a chemical composition ratio, the sealing portion 750 makes Figure 7 The deviation of the light transmittance variation according to the wavelength of light emitted from the light emitting layer 512 shown in FIG. 5 is substantially minimized.

[0246] In an exemplary embodiment, the third sub-inorganic layer 752c may have a thickness substantially equal to or less than about As an exemplary embodiment, the thickness of the first inorganic sub-layer 752a may be about The thickness of the second inorganic sub-layer 752b may be about The thickness of the third inorganic sub-layer 752c may be about However, in other exemplary embodiments, the thickness may vary.

[0247] FIG. 11A to FIG. 11C is shown for performing manufacturing according to Fig.10 An embodiment of the method of showing an apparatus is a front view of the device.

[0248] The following will refer to FIG. 11A to FIG. 11C Description of manufacturing Fig.10 The method of the upper inorganic layer 752. FIG. 11A to FIG. 11C The deposition apparatus 8000 shown in FIG. Figure 8 The deposition apparatus 8000 is basically the same, therefore, FIG. 11A to FIG. 11C The description of the deposition apparatus 8000 will refer to Figure 8 Description in .

[0249] like Fig.11A As shown in FIG. 7 , a third sub-inorganic layer 752c of the upper inorganic layer 752 is formed on the organic layer 755. 2 Gas, N 2 Gas, NH 3 Gas and SiH 4 The third inorganic sub-layer 752c is manufactured by using a mixed gas of H 2 The flow rate of the gas may be in the range of about 6715 sccm to about 20145 sccm, N 2 The flow rate of the gas may be in the range of about 2520 sccm to about 7560 sccm. 3 The flow rate of the gas may be in the range of about 670 sccm to about 2010 sccm. 4 The flow rate of the gas may be in a range from about 420 sccm to about 1260 sccm, the distance d1 or d2 between the gas injection unit 8400 and the substrate 100 may be in a range from about 475 mils to about 1425 mils (or about 950 mils), the RF power of the chamber 8100 may be in a range from about 750 W to about 2250 W (or about 1500 W), and the internal pressure of the chamber 8100 may be in a range from about 1000 mTorr to about 3000 mTorr (or about 2000 mTorr). In an exemplary embodiment, N 2 O gas may not be used to manufacture the third sub-inorganic layer 752 c , and the third sub-inorganic layer 752 c may not include oxygen.

[0250] The composition ratio of silicon, nitrogen, and hydrogen included in the third inorganic sublayer 752c may be about Fig.10The composition ratios of silicon, nitrogen, and hydrogen included in the third inorganic sublayer 752c are substantially the same.

[0251] like Fig. 11B As shown in FIG. 1 , the first inorganic sub-layer 752a is formed on the third inorganic sub-layer 752c. Figure 6 The first inorganic sub-layer 752a is formed in the same manner as the upper inorganic layer 752. The method for manufacturing the first inorganic sub-layer 752a will be referred to in the above reference. Figure 8 In this embodiment, the distance d2 between the gas injection unit 8400 and the substrate 100 may be defined as the distance between the gas injection unit 8400 and the uppermost layer (e.g., the top surface of the third sub-inorganic layer 752c) located farthest from the substrate 100 among the layers disposed on the substrate 100.

[0252] like Fig. 11C As shown in FIG. 1 , a second sub-inorganic layer 752 b is formed on the first sub-inorganic layer 752 a. 2 Gas, N 2 Gas, NH 3 Gas and SiH 4 The second inorganic sub-layer 752b is manufactured by deposition of a mixed gas of a gas. In this embodiment, H in the supply pipe 2 The flow rate of the gas may be in the range of about 6715 sccm to about 20145 sccm. 2 The flow rate of the gas may be in the range of about 2520 sccm to about 7560 sccm, supplying NH 3 The flow rate of the gas may be in the range of about 670 sccm to about 2010 sccm, supplying SiH 4 The flow rate of the gas may be in a range from about 420 sccm to about 1260 sccm, the distance d1 or d2 between the gas injection unit 8400 and the substrate 100 may be in a range from about 475 mils to about 1425 mils (or about 950 mils), the RF power of the chamber 8100 may be in a range from about 1500 W to about 4500 W (or about 3000 W), and the internal pressure of the chamber 8100 may be in a range from about 750 mTorr to about 2250 mTorr (or about 1500 mTorr). In an exemplary embodiment, N 2 O gas may not be used to manufacture the second sub-inorganic layer 752 b , and the second sub-inorganic layer 752 b may not include oxygen.

[0253] In this embodiment, Fig. 11CThe distance d2 between the gas injection unit 8400 and the substrate 100 can be defined as the distance between the gas injection unit 8400 and the uppermost layer (e.g., the top surface of the first sub-inorganic layer 752a) among the layers disposed on the substrate 100 that is located farthest from the substrate 100.

[0254] The composition ratio of silicon, nitrogen, and hydrogen included in the second inorganic sublayer 752b may be the same as that included in Fig. 9 The composition ratios of silicon, nitrogen and hydrogen in the second inorganic sub-layer 752b are substantially the same.

[0255] In an exemplary embodiment, the lower inorganic layer 751 may include a plurality of sub-inorganic layers. For example, the lower inorganic layer 751 may include a first sub-inorganic layer, a second sub-inorganic layer, and a third sub-inorganic layer. In this embodiment, the first sub-inorganic layer, the second sub-inorganic layer, and the third sub-inorganic layer of the lower inorganic layer 751 may be substantially the same as the first sub-inorganic layer 752a, the second sub-inorganic layer 752b, and the third sub-inorganic layer 752c of the upper inorganic layer 752, respectively.

[0256] In an exemplary embodiment, the lower inorganic layer 751, the organic layer 755, and the upper inorganic layer 752 may be manufactured in different chambers. For example, the lower inorganic layer 751 may be formed in a separate and different first chamber. The display device including the lower inorganic layer 751 may be transported to a separate and different second chamber, and the organic layer 755 may be formed in the second chamber. The display device including the lower inorganic layer 751 and the organic layer 755 may be transported to a separate and different third chamber, and the upper inorganic layer 752 may be formed in the third chamber. When the upper inorganic layer 752 includes a plurality of sub-inorganic layers (e.g., 752a, 752b, and 752c), the plurality of sub-inorganic layers 752c, 752a, and 752b may be sequentially formed in the same third chamber. However, in an optional exemplary embodiment, in order to deposit one or more layers of the upper inorganic layer 752, the display device may be moved to a separate and different chamber.

[0257] As described above, in the display device according to the exemplary embodiment, the display device substantially minimizes the deviation of the light transmittance change according to the wavelength of the light transmitted from the light emitting layer. Therefore, in the display device, the color unevenness of the image generated by the display device due to exposure to sunlight can be substantially minimized.

[0258] While the invention has been shown and described with reference to exemplary embodiments thereof, it will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the exemplary embodiments.

Claims

1. A display device, comprising: substrate; A light-emitting layer is located on the substrate; as well as a sealing portion, located on the light-emitting layer, The sealing portion includes: a first inorganic layer; a second inorganic layer disposed between the first inorganic layer and the light-emitting layer; and at least one organic layer disposed between the first inorganic layer and the second inorganic layer. The first inorganic layer includes at least one layer containing silicon, oxygen, nitrogen and hydrogen, The at least one layer of the first inorganic layer comprises a silicon content of 30-40 at %, an oxygen content of 15-35 at %, a nitrogen content of 10-20 at %, a hydrogen content of 20-30 at %, and The at least one layer of the first inorganic layer has a refractive index equal to or less than 1.

70.

2. The display device according to claim 1, wherein: In the at least one layer of the first inorganic layer, the silicon content is 35 at %, the oxygen content is 25 at %, the nitrogen content is 15 at %, and the hydrogen content is 25 at %.

3. The display device according to claim 1, wherein: The at least one layer of the first inorganic layer includes SiON:H.

4. The display device according to claim 1, wherein: The first inorganic layer includes at least two sub-inorganic layers.

5. The display device according to claim 4, wherein: The at least two sub-inorganic layers include: a first sub-inorganic layer on the light-emitting layer; and At least one of a second sub-inorganic layer on the first sub-inorganic layer and a third sub-inorganic layer below the first sub-inorganic layer.

6. The display device according to claim 5, wherein: The first inorganic sub-layer includes a silicon content of 30-40 at %, an oxygen content of 15-35 at %, a nitrogen content of 10-20 at %, and a hydrogen content of 20-30 at %.

7. The display device according to claim 6, wherein: At least one of the second sub-inorganic layer and the third sub-inorganic layer includes silicon, nitrogen, and hydrogen; and In at least one of the second inorganic sub-layer and the third inorganic sub-layer, the silicon content is 30-50 at %, the nitrogen content is 30-50 at %, and the hydrogen content is 20-30 at %.

8. The display device according to claim 7, wherein: In at least one of the second inorganic sub-layer and the third inorganic sub-layer, the silicon content is 40 at %, the nitrogen content is 40 at %, and the hydrogen content is 20 at %.

9. The display device according to claim 7, wherein: In at least one of the second inorganic sub-layer and the third inorganic sub-layer, the silicon content is 30 at %, the nitrogen content is 50 at %, and the hydrogen content is 20 at %.

10. The display device according to claim 5, wherein: The first inorganic sub-layer includes SiON:H, and At least one of the second inorganic sub-layer and the third inorganic sub-layer includes SiN x :H.

11. The display device according to claim 5, wherein: The first sub-inorganic layer, the second sub-inorganic layer, and the third sub-inorganic layer have different refractive indices from each other.

12. The display device according to claim 11, wherein: The first sub-inorganic layer has a refractive index in a range from 1.47 to 1.70; and The second sub-inorganic layer and the third sub-inorganic layer have a refractive index higher than the refractive index of the first sub-inorganic layer.

13. A display device, comprising: substrate; A light-emitting layer is located on the substrate; as well as a sealing portion, located on the light-emitting layer, The sealing portion includes: a first inorganic layer; a second inorganic layer disposed between the first inorganic layer and the light-emitting layer; and at least one organic layer disposed between the first inorganic layer and the second inorganic layer. The first inorganic layer includes a plurality of sub-inorganic layers arranged adjacent to each other, One of the plurality of inorganic sub-layers comprises a silicon content of 30-40 at %, an oxygen content of 15-35 at %, a nitrogen content of 10-20 at %, and a hydrogen content of 20-30 at %, and The one of the plurality of sub-inorganic layers has a refractive index equal to or less than 1.70.

Images