Display device and method of manufacturing the same

By forming a transmission hole on the substrate of the display device and covering it with an inorganic layer, the problems of complex manufacturing processes and insufficient moisture resistance in the prior art are solved, and the effect of simplifying the process and improving moisture resistance is achieved.

CN111816677BActive Publication Date: 2025-05-09SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN202010172158.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-04-11
Filing Date
2020-03-12
Publication Date
2025-05-09
Estimated Expiration
2040-03-12

AI Technical Summary

Technical Problem

The existing display devices have complex processes and insufficient moisture resistance performance during the manufacturing process, especially in the design of component signal transmission holes.

Method used

By forming a transmission hole on the substrate of the display device and covering the ends of the transmission holes with an inorganic layer in the film encapsulation layer, a dam is formed to prevent the organic layer from overflowing, simplifying the manufacturing process and improving moisture-proof performance.

Benefits of technology

A display device that simplifies manufacturing processes and improves moisture-proof performance is realized, ensuring the stability and life of the product.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present disclosure relates to a display device and a method for manufacturing the display device. The method for manufacturing the display device comprises: preparing a hard substrate including an empty space; forming a soft substrate on the hard substrate; forming a main display area and a sensor area on the soft substrate; forming a thin film encapsulation layer covering the main display area and the sensor area; and forming a transmission hole at the position of the empty space by removing the hard substrate, the transmission hole penetrating from the soft substrate to the thin film encapsulation layer.
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Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Korean Patent Application No. 10-2019-0042669 filed on April 11, 2019, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0003] One or more embodiments relate to a display device and a method of manufacturing the same. Background Art

[0004] Recently, the use of display devices has become diversified. In addition, as display devices have become thinner and lighter, their scope of use has gradually expanded.

[0005] As the display device is variously used, there may be various methods in designing the shape of the display device. In addition, functions that can be combined or associated with the display device are being added. Summary of the invention

[0006] One or more embodiments include a display device and a method of manufacturing the display device, the display device including a sensor area in which a component such as a sensor can be arranged. One or more embodiments include a display device and a method of manufacturing the display device, the display device simplifies the manufacturing process and improves the moisture resistance around the transmission hole through which the component signal passes. However, it should be understood that the embodiments described herein should be considered only in a descriptive sense and not for limiting the present disclosure.

[0007] According to one or more embodiments, a display device includes: a substrate; a display unit, the display unit including a main display area and a sensor area, the display unit is arranged above the substrate, the main display area includes a main pixel, and the sensor area includes an auxiliary pixel and a transmission part; a thin film encapsulation layer, the thin film encapsulation layer covers and protects the main pixel and the auxiliary pixel of the display unit; and a component, the component exchanges signals through the transmission part, wherein the transmission part includes a transmission hole penetrating from the substrate to the thin film encapsulation layer.

[0008] The thin film encapsulation layer may include at least one organic layer and at least one inorganic layer stacked.

[0009] The display device may further include a dam surrounding the transmission hole, the dam preventing the at least one organic layer of the thin film encapsulation layer from overflowing to the transmission hole.

[0010] The at least one inorganic layer of the thin film encapsulation layer may cover an end portion of a layer interposed between the substrate and the thin film encapsulation layer, the end portion contacting the transmission hole.

[0011] The at least one inorganic layer of the thin film encapsulation layer may cover an end portion of the substrate contacting the transmission hole.

[0012] The thin film encapsulation layer may include a plurality of inorganic layers, and the at least one organic layer is interposed between the plurality of inorganic layers.

[0013] The component may include one of a sensor, a light, and a speaker.

[0014] According to one or more embodiments, a method for manufacturing a display device includes: forming a display unit including a main display area and a sensor area, the display unit being arranged above a substrate, the main display area including a main pixel, and the sensor area including an auxiliary pixel and a transmission part; and arranging a component on one side of the substrate, the component transmitting a signal through the transmission part, wherein forming the display unit includes: preparing a hard substrate including an empty space corresponding to the position of the transmission part; forming a soft substrate on the hard substrate; forming the main display area and the sensor area on the soft substrate; forming a thin film encapsulation layer covering the main display area and the sensor area; and forming a transmission hole at the position of the empty space by removing the hard substrate, the transmission hole penetrating from the soft substrate to the thin film encapsulation layer.

[0015] Forming the thin film encapsulation layer may include stacking at least one organic layer and at least one inorganic layer.

[0016] The method may further include forming a dam surrounding the transmission hole, the dam preventing the at least one organic layer of the thin film encapsulation layer from overflowing to the transmission hole.

[0017] The at least one inorganic layer of the thin film encapsulation layer may cover an end portion of a layer interposed between the soft substrate and the thin film encapsulation layer, the end portion contacting the transmission hole.

[0018] The at least one inorganic layer of the thin film encapsulation layer may cover an end portion of the soft substrate contacting the transmission hole.

[0019] The thin film encapsulation layer may include a plurality of inorganic layers, and the at least one organic layer is interposed between the plurality of inorganic layers.

[0020] The hard substrate may include a glass substrate.

[0021] The empty space may include one of a hole completely penetrating the hard substrate and a recess indented to a predetermined depth of the hard substrate, the hard substrate including a glass substrate.

[0022] Inner walls of the empty space facing each other may be formed parallel to each other.

[0023] Inner walls of the empty space facing each other may be formed not in parallel with each other.

[0024] The component may include one of a sensor, a light, and a speaker.

[0025] When a mask for forming the main display area and the sensor area is installed, the empty space may be used as a mark for alignment with the mask.

[0026] These and / or other aspects will become more apparent and easier to understand from the following description of embodiments in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] These and / or other aspects will become more apparent and easier to understand from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a perspective view of a display device according to an embodiment;

[0029] Figure 2 It is along Figure 1 A cross-sectional view of the display device taken along line AA' and line BB';

[0030] FIG. 3A to FIG. 3H Is manufacturing Figure 1 Sequential cross-sectional views of the process of the display device shown in ; and

[0031] Figure 4A and Figure 4B is Figure 3A sectional view of a modified example of an empty space formed in a hard substrate is shown in FIG. DETAILED DESCRIPTION

[0032] Now, with reference to the embodiment in detail, examples of the embodiment are shown in the accompanying drawings, in which the same reference numerals always indicate the same elements. In this regard, the present embodiment can have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain aspects of this specification. As used herein, the term "and / or" includes any combination and all combinations of one or more of the listed related items. Statements such as "at least one (kind)" modify the entire column of elements when placed before a column of elements, without modifying the individual elements of the column.

[0033] Hereinafter, the present disclosure will be described more fully with reference to the accompanying drawings in which example embodiments of the present disclosure are shown. When describing with reference to the accompanying drawings, the same reference numerals in the drawings indicate the same or corresponding elements, and their repeated description will be omitted.

[0034] As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0035] It will also be understood that the terms “comprises / includes” used herein specify the presence of stated features or components, but do not preclude the presence or addition of one or more other features or components.

[0036] For the convenience of explanation, the size of the elements in the drawings may be exaggerated. In other words, since the size and thickness of the components in the drawings are arbitrarily shown for the convenience of explanation, the following embodiments are not limited thereto.

[0037] When a specific embodiment can be implemented differently, a specific process order can be performed differently from the described order. For example, two processes described in succession can be performed substantially simultaneously, or in the reverse order of the described order.

[0038] Figure 1 is a perspective view of a display device 1 according to the embodiment.

[0039] like Figure 1 As shown, the display unit DA of the display device 1 includes a main display area MDA and a sensor area SA. The main display area MDA displays a main image by using light emitted from a plurality of main pixels Pm. In addition, the sensor area SA is where a component 300 such as a sensor using an optical signal or an acoustic signal is arranged (see Figure 2 ) area. The sensor area SA includes a transmission portion TA through which an optical signal and / or an acoustic signal can be transmitted, and the optical signal and / or the acoustic signal is output from the component 300 to the outside outside the substrate 100 or propagates from the outside toward the component 300. In addition, a plurality of auxiliary pixels Pa are also arranged in the sensor area SA, and the sensor area SA displays an image by using light emitted from the plurality of auxiliary pixels Pa. That is, not only the main display area MDA but also the sensor area SA displays an image by using the auxiliary pixels Pa. Since the transmission portion TA is arranged in the sensor area SA, the resolution of the image displayed through the sensor area SA may be lower than the resolution of the image displayed through the main display area MDA. In other words, due to the transmission portion TA, the number of auxiliary pixels Pa per unit area may be smaller than the number of main pixels Pm per unit area.

[0040] Although the display device 1 according to the embodiment is described as an organic light emitting display device as an example, the display device according to the embodiment is not limited thereto. In another embodiment, the display device according to the embodiment may be various types of display devices such as an inorganic light emitting display and a quantum dot light emitting display.

[0041] Figure 2 It is along Figure 11 is a cross-sectional view of the display device 1 taken along the line A-A' and the line B-B' of the sensor area SA and the cross-sectional structure of the main pixel Pm of the main display area MDA. The main pixel Pm and the auxiliary pixel Pa include an organic light emitting diode OLED and a thin film transistor TFT having substantially the same structure. As described above, the main pixel Pm and the auxiliary pixel Pa differ only in the number of arrangements per unit area. For ease of description, the organic light emitting diode OLED of the main pixel Pm is also referred to as a main light emitting element, and the organic light emitting diode OLED of the auxiliary pixel Pa is also referred to as an auxiliary light emitting element.

[0042] First, the display device 1 includes a substrate 100 , a main display area MDA and a sensor area SA provided on the substrate 100 , and a component 300 disposed under the substrate 100 , the component 300 corresponding to the sensor area SA.

[0043] The component 300 may include an electronic component that uses light or sound. For example, the electronic component may be a sensor such as an infrared sensor that emits and / or receives light, a sensor that outputs and senses light or sound to measure distance or recognize fingerprints, a small lamp that outputs light, or a speaker that outputs sound. The electronic component using light can use light in various bands, such as visible light, infrared light, and ultraviolet light. The component 300 arranged in the sensor area SA may be provided as a plurality of components. For example, as the component 300, a light emitting element and a light receiving element may be provided together in one sensor area SA. Alternatively, a light emitter and a light receiver may be provided as one component 300 at the same time.

[0044] Next, the substrate 100 is described one by one starting from the substrate 100. The substrate 100 may include a deformable soft substrate. The soft substrate may include: a polymer resin. The polymer resin may include polyethersulfone (PES), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyimide (PI), polycarbonate (PC) and cellulose acetate propionate (CAP). The substrate 100 including the polymer resin may be flexible, rollable or bendable. The substrate 100 may have a multilayer structure including a layer including a polymer resin and a layer (not shown) including an inorganic layer.

[0045] The buffer layer 111 on the substrate 100 can reduce or block the infiltration of foreign impurities, moisture or external air from below the substrate 100 and provide a flat surface. The buffer layer 111 may include an inorganic material such as an oxide or a nitride, or an organic material, or an organic / inorganic composite material, and include a single-layer structure or a multi-layer structure of an inorganic material and an organic material. A barrier layer (not shown) that blocks the infiltration of external air may also be arranged between the substrate 100 and the buffer layer 111. As shown in the figure, the buffer layer 111 may have a structure in which a first buffer layer 111a and a second buffer layer 111b are stacked.

[0046] The semiconductor layer 1130 is disposed above the buffer layer 111, and the gate electrode G is disposed above the semiconductor layer 1130, and the first gate insulating layer 112 is interposed between the gate electrode G and the semiconductor layer 1130. The gate electrode G may include at least one of Mo, Al, Cu, and Ti, and may include a single layer or multiple layers. For example, the gate electrode G may include a single Mo layer.

[0047] The first gate insulating layer 112 may include: SiO 2 、SiN x 、SiON、Al 2 O 3 、TiO 2 、 2 O 5 , HfO 2 or ZnO 2 .

[0048] The second gate insulating layer 113 may cover the gate electrode G. The second gate insulating layer 113 may include: SiO 2 、SiN x 、SiON、Al 2 O 3 、TiO 2 、 2 O 5 , HfO 2 or ZnO 2 .

[0049] The source electrode S and the drain electrode D may be disposed on the interlayer insulating layer 115. The source electrode S and the drain electrode D may include a conductive material including Mo, Al, Cu, and Ti, and include a single layer or a multilayer including the above materials.

[0050] The drain electrode D is connected to the anode layer 210 of the organic light emitting diode OLED.

[0051] The planarization layer 117 is positioned on the source electrode S and the drain electrode D. The organic light emitting diode OLED may be positioned on the planarization layer 117 .

[0052] The planarization layer 117 may have a flat surface so that the anode layer 210 may be formed to be flat. The planarization layer 117 may include a single layer or multiple layers containing an organic material. The planarization layer 117 may include: a general polymer such as benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, a polymer based on acrolein, a polymer based on imide, a polymer based on aryl ether, a polymer based on amide, a polymer based on fluorine, a polymer based on p-xylene, a polymer based on vinyl alcohol, or a mixture thereof. The planarization layer 117 may include an inorganic material. The planarization layer 117 may include: SiO 2 、SiN x 、SiON、Al 2 O 3 、TiO 2 、 2 O 5 , HfO 2 or ZnO 2 In the case where the planarization layer 117 includes an inorganic material, chemical planarization polishing may be performed according to circumstances. The planarization layer 117 may include both an organic material and an inorganic material.

[0053] The anode layer 210 may include a (semi) transmissive electrode or a reflective electrode. In an embodiment, the anode layer 210 may include a reflective layer and a transparent or semi-transparent electrode layer on the reflective layer, wherein the reflective layer includes at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and compounds thereof. The transparent or semi-transparent electrode layer may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), at least one of indium gallium oxide (IGO) and aluminum zinc oxide (AZO). In an embodiment, the anode layer 210 may have a stack structure of ITO / Ag / ITO.

[0054] The pixel defining layer 119 may be disposed on the planarization layer 117. The pixel defining layer 119 may be formed by using an organic insulating material such as polyimide, polyamide, acrylic resin, and HMDSO through spin coating, etc.

[0055] The intermediate layer 220 of the organic light emitting diode OLED may include an organic emission layer. The organic emission layer may include an organic material, and the organic material includes a fluorescent material or a phosphorescent material that emits red light, green light, blue light or white light. The organic emission layer may include a low molecular weight organic material or a polymer organic material. The functional layer may be further selectively arranged on / under the organic emission layer, and the functional layer includes a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL) and an electron injection layer (EIL). The intermediate layer 220 may be arranged to correspond to a plurality of anode layers 210. However, the embodiment is not limited thereto. The intermediate layer 220 may include a layer as a whole above the plurality of anode layers 210. However, various modifications may be made.

[0056] The cathode layer 230 may include a transmissive electrode or a reflective electrode. In an embodiment, the cathode layer 230 may include a transparent or semi-transparent electrode and include a metal thin layer having a small work function and including at least one of Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and compounds thereof. The cathode layer 230 may be arranged above the main display area MDA and the sensor area SA, and on the intermediate layer 220 and the pixel defining layer 119.

[0057] In addition, a barrier layer BSM is disposed between the semiconductor layer 1130 and a portion of the substrate 100 corresponding to the auxiliary pixel Pa. The barrier layer BSM prevents the thin film transistor TFT from being affected by an optical signal or an acoustic signal of the component 300 adjacent to the thin film transistor TFT.

[0058] The thin film encapsulation layer 120 is formed on the cathode layer 230, and the thin film encapsulation layer 120 includes at least one inorganic layer 121 or 123 and at least one organic layer 122 stacked. The inorganic layers 121 and 123 may include at least one inorganic insulating material including aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic layer 122 may include: polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, HMDSO, acrylic resin (e.g., PMMA, polyacrylic acid, etc.), or any combination thereof. The thin film encapsulation layer 120 covers the main pixel Pm and the auxiliary pixel Pa, and blocks the infiltration of external oxygen or moisture.

[0059] The transmission portion TA is provided as a transmission hole H that completely penetrates from the substrate 100 to the thin film encapsulation layer 120. That is, when viewed from above the thin film encapsulation layer 120, the component 300 is completely exposed and observed through the transmission hole H. However, since a window (not shown) covers the upper surface of the product, the component 300 is not exposed in the final product, and when the thin film encapsulation layer 120 is formed, the component 300 is directly exposed through the transmission hole H. The reason why the transmission hole H that completely penetrates each layer is formed is that the transmission hole H is not formed to a suitable depth by using a laser or the like, but is formed by using a window including an empty space 401 (see FIG. 1 ) described below. Figure 3A ) of the hard substrate 400 (see Figure 3A ) is naturally formed during the process of forming a layer. The detailed process is described below.

[0060] In addition, the end of the contact transmission hole H, that is, the end of the contact transmission hole H of the stacked layer from the substrate 100 to the layer below the thin film encapsulation layer 120 is covered by the inorganic layers 121 and 123 of the thin film encapsulation layer 120. In the case where the end of the contact transmission hole H is exposed to the outside air, since the exposed portion may serve as a moisture transmission path through which moisture penetrates, such a covering structure of the inorganic layers 121 and 123 is provided to prevent the moisture transmission path.

[0061] Reference numeral 124 represents a dam configured to prevent the organic layer 122 from overflowing to the transmission hole H, and the organic layer 122 has good fluidity in the thin film encapsulation layer 120. Reference numeral 110 represents each layer of the display unit DA from the substrate 100 to the organic light emitting diode OLED. In the following description of the process, for the convenience of description, these layers are simply and generally represented by the display layer 110.

[0062] As mentioned above, refer to FIG. 3A to FIG. 3H A process of manufacturing the display device 1 using the hard substrate 400 according to the embodiment and the result thereof are described in detail.

[0063] First, if Figure 3A As shown, a hard substrate 400 including a glass material is prepared at a position corresponding to the transmission portion TA by using a laser or the like and forming an empty space 401 .

[0064] When a hard substrate 400 having an empty space 401 formed therein is prepared, as Figure 3BAs shown, for example, a display layer 110 from a substrate 100 to an organic light emitting diode OLED is formed on a hard substrate 400. In this case, the substrate 100 is a soft substrate including a deformable material such as polyimide. Then the substrate on the left becomes the soft substrate 100, and the hard substrate 400 is removed during the process. In order to distinguish it from the hard substrate 400, the substrate 100 is referred to as a soft substrate below. When the display layer 110 is formed, a related layer is also formed inside the empty space 401. Since the related layer is formed inside the empty space 401, the related layer is discontinuously disconnected from the surroundings.

[0065] After forming the display layer 110, as Figure 3C As shown, a dam 124 is formed around the empty space 401. The dam 124 may include a glass material. The dam 124 prevents the organic layer 122 of the thin film encapsulation layer 120 to be formed next from overflowing into the empty space 401.

[0066] Then, if Figure 3D As shown, the first inorganic layer 121 of the thin film encapsulation layer 120 is formed. The first inorganic layer 121 covers the display layer 110 and the dam 124, is formed inside the empty space 401, and covers the end of the display layer 110 that contacts the empty space 401. Since the empty space 401 later becomes the transmission hole H, the end of the display layer 110 is considered to be the end of the display layer 110 that contacts the transmission hole H. Through this configuration, since the first inorganic layer 121 covers the end of the display layer 110 that can provide a moisture transmission path, a display device with excellent moisture resistance can be realized.

[0067] Next, if Figure 3E As shown, an organic layer 122 of the thin film encapsulation layer 120 is formed. In this case, since the organic layer 122 has excellent fluidity, the organic layer 122 may overflow to the empty space 401, but the pre-formed dam 124 appropriately blocks such overflow.

[0068] like Figure 3F As shown, the second inorganic layer 123 of the thin film encapsulation layer 120 is formed, and then, as shown in Figure 3G As shown, the hard substrate 400 is removed. Then, the display device 1 in which the soft substrate 100 is used as a base substrate is realized, and at the same time, the transmission hole H is immediately formed at the position where the empty space 401 exists.

[0069] Therefore, if Figure 3H As shown, when the component 300 is mounted, an environment is formed in which the component 300 can exchange signals with a side other than the substrate 100 .

[0070] Therefore, since the transmission hole H is naturally formed by the process of forming the display layer 110 and the thin film encapsulation layer 120, it is not necessary to pattern the transmission hole H whenever each layer of the display layer 110 is formed, thereby simplifying the operation. In addition, since a drilling operation using a laser or the like is not performed, the risk of wiring damage due to the laser is eliminated. In addition, since the inorganic layer (i.e., the first inorganic layer 121 and the second inorganic layer 123 of the thin film encapsulation layer 120) covers the end of the display layer 110 that contacts the transmission hole H, the possibility of moisture transmission can be fully suppressed.

[0071] Therefore, according to the above embodiments, a very stable display device having excellent moisture resistance through a simple manufacturing process can be realized.

[0072] Although Figure 4A and Figure 4B As shown, the above embodiment provides a case where the empty space 401 of the hard substrate 400 is not fully drilled but is recessed to a predetermined depth as an example, but complete through holes 402 and 403 can be formed. Figure 4A As shown, through holes 402 may be provided whose inner walls facing each other are parallel to each other, or as shown in FIG. Figure 4B As shown, through holes 403 may be provided whose inner walls facing each other are not parallel to each other. Figure 3A As shown, the empty space 401 may be a recess whose inner walls facing each other are parallel to each other, or the empty space 401 may be a recess whose inner walls facing each other are not parallel to each other.

[0073] In addition, when depositing the respective layers of the display layer 110, the empty space 401, the through holes 402 and 403 of the hard substrate 400 may be used as marks for alignment of an alignment mask (not shown). That is, in order to form the respective layers of the main display area MDA and the sensor area SA, deposition is performed using a mask (not shown) having a relevant pattern placed on the hard substrate 400. In this case, position alignment between the mask and the hard substrate 400 may be performed based on the empty space 401, the through holes 402 and 403.

[0074] According to the structure and manufacturing method described above, an image can be displayed even in the sensor area SA corresponding to the component 300, and the transmission hole H is naturally formed by a process of forming a layer on the substrate 100 without using a separate drilling process such as laser. Therefore, the manufacturing process can be simplified. In addition, since moisture transmission can be reliably blocked by covering the periphery of the transmission hole H with an inorganic layer, early degradation of the product can be prevented and the life of the product can be ensured.

[0075] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. Generally, the description of features or aspects within each embodiment should be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made herein without departing from the spirit and scope defined by the present disclosure.

Claims

1. A method for manufacturing a display device, the method comprising: forming a display unit including a main display area and a sensor area, the display unit being disposed above the soft substrate, the main display area including main pixels, and the sensor area including auxiliary pixels and a transmission part; as well as Arranging a component on one side of the soft substrate, the component transmitting a signal through the transmission part, Wherein, forming the display unit comprises: preparing a hard substrate including an empty space corresponding to the position of the transmission part; forming the soft substrate on the hard substrate, and at the same time, a material forming the soft substrate is formed in the empty space; forming the main display area and the sensor area on the soft substrate, and at the same time, materials forming the main display area and the sensor area are formed in the empty space; forming a thin film encapsulation layer covering the main display area and the sensor area, and at the same time, a material forming the thin film encapsulation layer is formed in the empty space; and By removing the hard substrate, a transmission hole is formed at a position where the empty space exists, the transmission hole penetrating from the soft substrate to the thin film encapsulation layer.

2. The method according to claim 1, wherein: Forming the thin film encapsulation layer includes stacking at least one organic layer and at least one inorganic layer.

3. The method according to claim 2, wherein: The method further comprises: A dam is formed around the transmission hole, the dam preventing the at least one organic layer of the thin film encapsulation layer from overflowing to the transmission hole.

4. The method according to claim 2, wherein: The at least one inorganic layer of the thin film encapsulation layer covers an end portion of a layer interposed between the soft substrate and the thin film encapsulation layer, and the end portion contacts the transmission hole.

5. The method according to claim 4, wherein: The at least one inorganic layer of the thin film encapsulation layer covers an end portion of the soft substrate contacting the transmission hole.

6. The method according to claim 2, wherein: The thin film encapsulation layer includes a plurality of inorganic layers, and the at least one organic layer is interposed between the plurality of inorganic layers.

7. The method according to claim 1, wherein: The hard substrate includes a glass substrate.

8. The method according to claim 1, wherein: The empty space includes one of a hole completely penetrating the hard substrate and a recess indented to a predetermined depth of the hard substrate, and the hard substrate includes a glass substrate.

9. The method according to claim 1, wherein: Inner walls of the empty space facing each other are formed parallel to each other.

10. The method according to claim 1, wherein: Inner walls of the empty space facing each other are formed not in parallel with each other.

11. The method according to claim 1, wherein: The component includes one of a sensor, a light, and a speaker.

12. The method according to claim 1, wherein: When a mask for forming the main display area and the sensor area is installed, the empty space is used as a mark for alignment with the mask.

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