Display Devices

Abstract

A display device comprises: a substrate; a display element arranged on the substrate and comprising a pixel electrode, a counter electrode and an emission layer between the pixel electrode and the counter electrode; and a top layer defining an air cavity, the air cavity being arranged to surround the display element, wherein a refractive index of the top layer is greater than a refractive index of the air cavity.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Korean Patent Application No. 10-2019-0051823 filed on May 2, 2019, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] One or more embodiments relate to a display device, and more particularly, to a configuration that improves efficiency of propagating light and brightness thereof due to lack of dispersion of the propagating light. Background Art

[0004] Recently, the array of applications in which display devices can be used has become more diverse. This array continues to grow as display devices become thinner and lighter, and as users increasingly rely on them for both personal and professional tasks. It is therefore important to reliably ensure their performance when producing the images to be displayed. Summary of the invention

[0005] One or more embodiments include a display that can provide high quality images.

[0006] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

[0007] According to one or more embodiments, a display device includes: a substrate; a display element, which is arranged on the substrate and includes a pixel electrode, a counter electrode, and an emission layer between the pixel electrode and the counter electrode; and a top layer defining an air cavity, the air cavity being arranged to surround the display element, wherein the refractive index of the top layer may be greater than the refractive index of the air cavity.

[0008] The top layer may include an inorganic insulating layer.

[0009] The top layer may include at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0010] The top layer may include side portions that are inclined relative to the major surface of the substrate.

[0011] An inclination angle of the side portion with respect to a plane parallel to the main surface of the substrate may be equal to or greater than about 50°.

[0012] The top layer may include at least one hole.

[0013] The display device may further include: a thin film encapsulation layer covering the display element and including at least one organic encapsulation layer and at least one inorganic encapsulation layer, wherein the at least one organic encapsulation layer may have a refractive index greater than that of the air cavity.

[0014] The air cavity may be located on the thin film encapsulation layer.

[0015] The air cavity may be located beneath the thin film encapsulation layer.

[0016] The display device may further include: a pixel defining layer covering an edge of the pixel electrode and including an opening corresponding to the pixel electrode, wherein the air cavity may be located on the pixel defining layer.

[0017] The air cavity may overlap an edge of the pixel electrode.

[0018] An edge of the pixel electrode may be located inside the air cavity.

[0019] The roof layer may include an opening having a width smaller than a width of the pixel electrode.

[0020] According to one or more embodiments, a display device includes: a substrate; a display element, which is arranged on the substrate and includes a pixel electrode, a counter electrode, and an emission layer between the pixel electrode and the counter electrode; and a top layer that defines an air cavity and includes an inclined side portion, the inclined side portion is located on a propagation path of light that can be emitted from the display element, and the inclined side portion defines an interface between the top layer and the air cavity to change the propagation path of the light from a direction that can be inclined relative to the thickness direction of the substrate to a direction that can be at least parallel to the thickness direction of the substrate, wherein the refractive index of the top layer is greater than the refractive index of the air cavity.

[0021] The top layer may include at least one hole.

[0022] The air cavity may completely surround the display element.

[0023] The difference between the refractive index of the top layer and the refractive index of the air cavity may be equal to or greater than about 0.7.

[0024] The roof layer may include an inorganic insulating layer, and an inclination angle of the inclined side portion with respect to a plane parallel to a main surface of the substrate may be equal to or greater than about 50°.

[0025] The top layer may include an opening corresponding to the emissive layer of the display element.

[0026] The display device may further include: a thin film encapsulation layer covering the display element and including at least one organic encapsulation layer and at least one inorganic encapsulation layer, wherein a difference between a refractive index of the at least one organic encapsulation layer and a refractive index of the air cavity may be equal to or greater than about 0.5.

[0027] These and / or other aspects will become apparent and more readily understood from the following description of the embodiments when taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] These and / or other aspects will become apparent and more easily understood from the following description of embodiments in conjunction with the accompanying drawings, in which:

[0029] Figure 1 A plan view showing a display device according to an embodiment;

[0030] Figure 2 A schematic diagram showing an equivalent circuit of one of the pixels of a display device according to an embodiment;

[0031] Figure 3 The embodiment according to the present invention is shown along Figure 1 A schematic cross-sectional view of a portion of the display device taken along line AA';

[0032] FIG. 4A to FIG. 4C plan views respectively showing a portion of a display device according to an embodiment;

[0033] Figure 5 The embodiment according to the present invention is shown along Figure 1 A schematic cross-sectional view of a path of light emitted from a display element of a display device, taken along line AA′;

[0034] 6A to 6F A process for manufacturing a display device according to an embodiment is shown. Figure 1 A schematic cross-sectional view taken along line AA';

[0035] Figure 6G Show Fig. 6A Floor plan of

[0036] Figure 7 A portion of a display device according to an embodiment is shown along Figure 1 A schematic cross-sectional view taken along line AA';

[0037] Figure 8 Show Figure 7 An enlarged view of region VIII;

[0038] Fig. 9 A portion of a display device according to an embodiment is shown along Figure 1 A schematic cross-sectional view taken along line AA';

[0039] FIG. 10A to FIG. 10C plan views respectively showing a portion of a display device according to an embodiment;

[0040] Fig.11 A portion of a display device according to an embodiment is shown along Figure 1 A schematic cross-sectional view taken along line AA';

[0041] FIG. 12A to FIG. 12EThe diagrams respectively show a portion of the display device according to the embodiment. Figure 1 A cross-sectional view taken along line AA';

[0042] Fig.13 A portion of a display device according to an embodiment is shown along Figure 1 A schematic cross-sectional view taken along line AA';

[0043] Fig.14 1. An air cavity of a display device and its surroundings according to an embodiment are shown. Figure 1 An enlarged cross-sectional view taken along line AA';

[0044] Fig.15A and Fig. 15B A plan view showing a portion of a display device according to an embodiment;

[0045] Fig.16 A portion of a display device according to an embodiment is shown along Figure 1 A schematic cross-sectional view taken along line AA';

[0046] FIG. 17A to FIG. 17F A process for manufacturing a display device according to an embodiment is shown. Figure 1 A schematic cross-sectional view taken along line AA';

[0047] Figure 17G Show Fig.17A Floor plan of

[0048] Fig.18 The display device according to the embodiment is shown along Figure 1 A schematic cross-sectional view taken along line AA' of FIG.

[0049] Fig.19 The display device according to the embodiment is shown along Figure 1 Schematic cross-sectional view taken along line AA'. DETAILED DESCRIPTION

[0050] Now will be referred to in detail embodiment, the example of these embodiments is illustrated in the accompanying drawings, wherein the same reference numerals refer to the same elements from time to time. In this regard, the embodiment can have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments described below are only by reference to the accompanying drawings to explain the various aspects of the description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression "at least one of a, b, and c" represents only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or their variants.

[0051] It will be understood that although the terms "first", "second", etc. may be used herein to describe various components, these components should not be limited by these terms. These components are only used to distinguish one component from another component.

[0052] As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise.

[0053] It will be further understood that the terms “comprises” and / or “comprising” used herein specify the presence of stated features or components, but may not exclude the presence or addition of one or more other features or components.

[0054] It will be understood that when a layer, region or component is referred to as being “formed on” another layer, region or component, it may be directly or indirectly formed on the other layer, region or component. That is, for example, intervening layers, regions or components may be present.

[0055] For the sake of convenience, the size of the elements in the drawings may be exaggerated. In other words, since the size and thickness of the components in the drawings are arbitrarily illustrated for the convenience of explanation, the following embodiments are not limited thereto.

[0056] When a certain embodiment can be implemented differently, a specific process order can be performed in a different order than described. For example, two processes described in succession can be performed substantially at the same time, or in a reverse order to the described order.

[0057] It will be understood that when a layer, region, or component is referred to as being “connected” to another layer, region, or component, it may be “directly connected” to the other layer, region, or component, or may be “indirectly connected” to the other layer, region, or component with other layers, regions, or components interposed therebetween. For example, it will be understood that when a layer, region, or component is referred to as being “electrically connected” to another layer, region, or component, it may be “directly electrically connected” to the other layer, region, or component, or may be “indirectly electrically connected” to the other layer, region, or component with other layers, regions, or components interposed therebetween.

[0058] Further, in this specification, the phrase "in a plan view" means when an object portion is observed from above, and the phrase "in a cross-sectional view" means when a cross section taken by vertically cutting an object portion is observed from the side. In addition, the term "overlap" or "overlapping" means that the first object can be above, below or on the side of the second object, and vice versa. In addition, the term "overlap" can include layers, stacks, facing, extending above, covering or partially covering or any other suitable terms as will be appreciated and understood by those of ordinary skill in the art. The term "facing" means that the first object can be directly or indirectly opposite to the second object. In the case where a third object is between the first object and the second object, although still facing each other, the first object and the second object can be understood to be indirectly opposite to each other.

[0059] For ease of description, spatially relative terms "below," "below," "lower," "above," "upper," etc. may be used herein to describe the relationship between one element or component and another element or component as illustrated in the accompanying drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the accompanying drawings. For example, where the device illustrated in the accompanying drawings is flipped, a device located "below" or "below" another device may be placed "above" the other device. Thus, the illustrative term "below" may include both a lower position and an upper position. The device may also be oriented in other directions, and therefore, the spatially relative terms may be interpreted differently depending on the orientation.

[0060] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation of the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or, for example, within ±30%, 20%, 10%, 5% of the stated value.

[0061] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined in the description.

[0062] In the following examples, the x-axis, y-axis, and z-axis are not limited to the three axes of the rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0063] Figure 1 A plan view of a display device 10 according to an embodiment is shown.

[0064] The display device 10 may include a display area DA and a peripheral area PA adjacent to the display area DA. The display device 10 may include pixels P disposed in the display area DA. Each pixel P may be connected to a scan line SL and a data line DL. It is understood that Figure 1 A diagram showing a substrate 100 of a display device 10. For example, it can be understood that the substrate 100 includes a display area DA and a peripheral area PA.

[0065] A scan driver 1100, a data driver 1200, and a main power line (not shown) may be disposed in the peripheral area PA, the scan driver 1100 providing a scan signal to each pixel P through a scan line SL, the data driver 1200 providing a data signal to each pixel P through a data line DL, and the main power line providing a first power voltage and a second power voltage.

[0066] Although Figure 1 It is shown that the data driver 1200 may be disposed on the substrate 100 , but the data driver 1200 may be disposed on a flexible printed circuit board (FPCB) electrically connected to a pad disposed on one side of the display device 10 .

[0067] The display device 10 according to the embodiment may include an organic light emitting display, an inorganic light emitting display, a liquid crystal display, an electrophoretic display, a field emission display, a surface conduction electron emitter display, a quantum dot display, a plasma display, and a cathode ray display. Although the display device according to the embodiment may be described as an organic light emitting display device as an example, the display device according to the present disclosure may not be limited thereto.

[0068] Figure 2 A schematic diagram showing an equivalent circuit of one of the pixels of the display device according to the embodiment.

[0069] refer to Figure 2 , the pixel P may include a pixel circuit PC and a display element connected to the pixel circuit PC. The display element may include, for example, an organic light emitting diode OLED. The pixel circuit PC may include a first thin film transistor T1, a second thin film transistor T2, and a storage capacitor Cst. Each pixel P may emit, for example, red light, green light, or blue light through the organic light emitting diode OLED, or emit red light, green light, blue light, or white light.

[0070] The second thin film transistor T2 may be a switching thin film transistor and may be connected to the scan line SL and the data line DL. The second thin film transistor T2 may transmit a data voltage input through the data line DL to the first thin film transistor T1 in response to a scan voltage input through the scan line SL. The storage capacitor Cst may be connected to the second thin film transistor T2 and the driving voltage line PL and may store a voltage corresponding to a difference between a voltage transmitted from the second thin film transistor T2 and a first power supply voltage ELVDD supplied through the driving voltage line PL.

[0071] The first thin film transistor T1 may be a driving thin film transistor, may be connected to the driving voltage line PL and the storage capacitor Cst, and may control a driving current flowing from the driving voltage line PL through the organic light emitting diode OLED in response to a voltage stored in the storage capacitor Cst. The organic light emitting diode OLED may emit light having a predetermined brightness according to the driving current. The counter electrode (e.g., cathode) of the organic light emitting diode OLED may receive a second power supply voltage ELVSS.

[0072] Although the pixel circuit PC may include two thin film transistors and one storage capacitor, the present disclosure may not be limited thereto. The number of thin film transistors and the number of storage capacitors may be variously changed depending on the design of the pixel circuit PC.

[0073] Figure 3 The embodiment according to the present invention is shown along Figure 1 A schematic cross-sectional view of a portion of the display device taken along line AA', and FIG. 4A to FIG. 4C A plan view showing a portion of a display device according to an embodiment.

[0074] refer to Figure 3 , the pixel circuit PC may be disposed on the substrate 100. The pixel circuit PC may be covered by the insulating layer 110. The organic light emitting diode OLED may be disposed above the pixel circuit PC and electrically connected to the pixel circuit PC. The top layer 410 may be disposed above the organic light emitting diode OLED, and the top layer 410 may define the air cavity AC as a light control pattern. In other words, one or more portions of the top layer 410 that form the air cavity AC may control the pattern of light in the area adjacent to the top layer 410 and the air cavity AC at the interface between the air cavity AC and the top layer 410. For example, one or more portions of the top layer 410 may be used as a light control member for forming a propagation path of light emitted from the light emitting diode OLED, so that the emitted light may be guided from the top layer 410 at the interface of the air cavity AC to form a controlled pattern of emitted light.

[0075] The substrate 100 may include a glass material or a polymer resin. In an embodiment, the substrate 100 may include a 2As a glass substrate of the main component. In another embodiment, the substrate 100 may include a base layer and a barrier layer, the base layer includes a polymer resin, and the barrier layer includes an inorganic insulating material. For example, the substrate 100 may include a first polymer resin layer, a first inorganic barrier layer, a second polymer resin layer and a second inorganic barrier layer stacked sequentially. The first polymer resin layer and the second polymer resin layer may include polyethersulfone (PES), polyarylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyimide (PI), polycarbonate (PC), cellulose triacetate (TAC) and / or cellulose acetate propionate (CAP), etc. The first inorganic barrier layer and the second inorganic barrier layer may include silicon nitride, silicon oxide and / or silicon oxynitride.

[0076] As reference Figure 2 As described, the pixel circuit PC may include a transistor and a storage capacitor. An insulating layer such as silicon nitride, silicon oxide, and / or silicon oxynitride may be provided between electrodes of the transistor and / or between electrodes of the storage capacitor.

[0077] The pixel circuit PC may be covered by an insulating layer 110. The pixel electrode 221 on the insulating layer 110 may be electrically connected to the pixel circuit PC through a contact hole formed in the insulating layer 110. The insulating layer 110 may include an organic insulating layer and / or an inorganic insulating layer. The organic insulating layer may include an organic insulating material such as a general polymer (such as polymethyl methacrylate (PMMA) and polystyrene (PS)), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer, or a mixture thereof. The inorganic insulating layer may include at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0078] The pixel electrode 221 may include a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a compound thereof. In another embodiment, the pixel electrode 221 may further include a layer on / under the reflective layer including indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium oxide (In 2 O 3 ).

[0079] The pixel defining layer 120 may be disposed on the pixel electrode 221, and the pixel defining layer 120 may cover the edge of the pixel electrode 221. By increasing the distance between the counter electrode 223 and the edge of the pixel electrode 221, the pixel defining layer 120 may prevent arcing etc. from occurring between the counter electrode 223 and the edge of the pixel electrode 221. In other words, the pixel defining layer 120 may be arranged on the edge of the pixel electrode 221 and between the edge and the counter electrode 223 to increase the distance, and thus inhibit such arc formation. The pixel defining layer 120 may include an organic insulating material such as polyimide or hexamethyldisiloxane (HMDSO). The pixel defining layer 120 may include an inorganic insulating material, or may include an organic insulating material and an inorganic insulating material. The pixel defining layer 120 may include an opening 120OP overlapping with the central area of ​​the pixel electrode 221 or facing the central area of ​​the pixel electrode 221. The central area of ​​the pixel electrode 221 may be exposed through the opening 120OP of the pixel defining layer 120.

[0080] The intermediate layer 222 may be disposed on the pixel electrode 221. The intermediate layer 222 may include an emission layer 222b. The emission layer 222b may overlap or face the opening 120OP of the pixel defining layer 120. The emission layer 222b may include a polymer or a low molecular weight organic material that may emit light of a predetermined color.

[0081] The first functional layer 222a and the second functional layer 222c may be disposed under the emission layer 222b and on the emission layer 222b, respectively. The first functional layer 222a may include, for example, a hole transport layer (HTL), or may include an HTL and a hole injection layer (HIL). The second functional layer 222c may be disposed on the emission layer 222b, or may be omitted. The second functional layer 222c may include an electron transport layer (ETL) and / or an electron injection layer (EIL). Like the counter electrode 223 described below, the first functional layer 222a and / or the second functional layer 222c may be a common layer that completely covers the substrate 100.

[0082] The counter electrode 223 may include a conductive material having a small work function. For example, the counter electrode 223 may include a (semi) transparent layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, or an alloy thereof. Alternatively, the counter electrode 223 may further include a (semi) transparent layer including ITO, IZO, ZnO, or In on the (semi) transparent layer including the above materials. 2 O 3 layer.

[0083] The organic light emitting diode OLED may be covered by a thin film encapsulation layer 300 which may be an encapsulation member. The organic light emitting diode OLED may include a pixel electrode 221, an intermediate layer 222, and a counter electrode 223. The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In an embodiment, the thin film encapsulation layer 300 may include a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 which may be sequentially stacked (i.e., stacked in the order described).

[0084] The first inorganic encapsulating layer 310 and the second inorganic encapsulating layer 330 may include at least one of an inorganic material including aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0085] The organic encapsulation layer 320 may include a polymer material. The organic encapsulation layer 320 may include a material, wherein the difference between the refractive index of the material and the refractive index of the air cavity AC described below may be equal to or greater than about 0.5. For example, the organic encapsulation layer 320 may include an organic material having a refractive index ranging from about 1.5 to about 1.6. The organic encapsulation layer 320 may include acrylic resin, epoxy resin, polyimide and / or polyethylene, etc. In an embodiment, the organic encapsulation layer 320 may include acrylate.

[0086] The air cavity AC may be disposed on a propagation path of light emitted from the organic light emitting diode OLED. The propagation path of light may include a path that travels in a direction that may be inclined with respect to the thickness direction (ie, the z direction) of the display device 10. Figure 3 In the schematic cross-sectional view of , the air cavity AC may be provided on the thin film encapsulation layer 300, and may be provided in an inclined direction between a direction perpendicular to the main surface 101 of the substrate 100 (i.e., the z direction) and a direction parallel to the main surface 101 of the substrate 100 (i.e., the x direction). In an embodiment, the air cavity AC may be provided on the thin film encapsulation layer 300, and may overlap with or face the pixel defining layer 120. In other words, the air cavity AC may be provided on the thin film encapsulation layer 300 to be inclined with respect to the z direction and the x direction.

[0087] The air cavity AC may be defined by the top layer 410. The top layer 410 may include a lower portion, an upper portion, and a side portion, the lower portion contacts the thin film encapsulation layer 300, the upper portion is separated from the top surface of the thin film encapsulation layer 300 so that the air cavity AC may be between the thin film encapsulation layer 300 and the upper portion, and the side portion connects the lower portion to the upper portion. The inclination angle α of the side portion of the top layer 410 (e.g., the inclination angle α of the side portion relative to a virtual plane parallel to the main surface 101 of the substrate 100) may be equal to or greater than about 50°. For example, the inclination angle α may be equal to or greater than about 60°. One or more portions of the top layer 410 that form the air cavity AC may be disposed on the thin film encapsulation layer 300 to be inclined relative to the z-direction and the x-direction. For example, one or more portions of the top layer 410 may be disposed to be offset from the emission layer 222b. One or more air cavities AC may be disposed to be offset from the emission area EA (or the opening 120OP of the pixel defining layer 120). The height h of the air cavity AC may be from about 1.5 μm to about 3.5 μm. For example, the height h of the air cavity AC may be about 1.5 μm to about 3.5 μm, or about 2 μm to about 3 μm.

[0088] The roof layer 410 may include an inorganic material. In an embodiment, the roof layer 410 may include an inorganic insulating layer. The roof layer 410 may include silicon oxide, silicon nitride, and / or silicon oxynitride.

[0089] The top layer 410 may have a refractive index greater than the refractive index n of the air cavity AC (i.e., the refractive index n of the air inside the air cavity AC) (approximately 1.0). As an example, the difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be equal to or greater than approximately 0.5. As another example, the difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be equal to or greater than approximately 0.6. As another example, the difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be equal to or greater than approximately 0.7. In an embodiment, in the case where the top layer 410 may include silicon nitride, the difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be adjusted by adjusting the amount of silicon of the top layer 410. The refractive index of the top layer 410 may be from approximately 1.7 to approximately 1.9.

[0090] refer to Figure 3 as well as FIG. 4A to FIG. 4C , the air cavity AC may completely surround the periphery of the emission area EA so as to surround (e.g., completely surround) the emission area EA in a plan view. The inner width (e.g., a width W2 between portions of the air cavity AC disposed at two opposite sides of the emission area EA, the emission area EA being between the portions of the air cavity AC) may be equal to or greater than a width W1 of the emission area EA. The width W1 of the emission area EA may be defined as a width of the opening 120OP of the pixel defining layer 120.

[0091] The top layer 410 may include a hole 410H overlapping or facing the air cavity AC. The hole 410H of the top layer 410 may be formed during the process of forming the air cavity AC. One hole 410H may be provided in the top layer 410, or a plurality of holes 410H may be provided in the top layer 410. In an embodiment, as shown in FIG. Figure 4A As shown in FIG. 4 , one hole 410H may be provided to completely surround the periphery of the emission area EA so as to surround the emission area EA. Figure 4B As shown in , the holes 410H may each have a slit shape and may be disposed along one side of the emission area EA. Figure 4C As shown in , the holes 410H may be disposed to completely surround the periphery of the emission area EA so as to surround the emission area EA, and may be spaced apart from each other.

[0092] The roof layer 410 may include an opening 410OP overlapping or facing the emission area EA and / or the opening 120OP of the pixel defining layer 120. Like the hole 410H, the opening 410OP of the roof layer 410 forms a through hole passing through the top and bottom surfaces of the roof layer 410. The width W3 of the opening 410OP of the roof layer 410 may be equal to or greater than the width W1 of the opening 120OP of the pixel defining layer 120.

[0093] The roof layer 410 may be covered by the planarization layer 500. The planarization layer 500 may include an organic insulating material. The planarization layer 500 may be formed by coating and hardening an organic material having viscosity. As described above, although the roof layer 410 may include at least one hole 410H, by adjusting the viscosity of the organic material constituting the planarization layer 500, an organic material that may be the same as the organic material of the planarization layer 500 may be prevented from being located inside the pore AC.

[0094] Figure 5 A schematic cross-sectional view illustrating a path of light emitted from a display element of a display device according to an embodiment.

[0095] refer to Figure 5 , light emitted from the organic light emitting diode OLED and propagating in the thickness direction (i.e., the z direction) can travel in the thickness direction. That is, the light can travel along path "A" without changing the path. Further, and when considering an example different from the embodiments herein, in the case where there may be no top layer 410 defining the air cavity AC, light emitted from the organic light emitting diode OLED and traveling in an oblique direction (e.g., an oblique direction between the z direction and the x direction) immediately and continuously travels in the oblique direction. As a result, the brightness of the light emitted from the organic light emitting diode OLED can be reduced. However, according to an embodiment, as shown in reference Figures 3 to 5As described, for example, since the top layer 410 defining the air cavity AC can also be arranged obliquely on the above-mentioned oblique propagation path of the light, total reflection of the light can occur at the interface between the air cavity AC and the top layer 410. In other words, since the air cavity AC and one or more portions of the top layer 410 forming the air cavity AC are offset from the emission area EA, the propagation path of the light can be changed from the case where the light propagates completely obliquely relative to the z-direction and the x-direction (i.e., when the top layer 410 is not present) to traveling along the path "B". As an example, the path "B" can define a path definition portion thereof that is at least parallel to the z-direction (i.e., the thickness direction of the display device 10). Therefore, the luminous efficiency of the organic light emitting diode OLED can be improved, and the brightness of the light emitted from the organic light emitting diode OLED can be increased. In other words, when light can be concentratedly emitted along the paths "A" and "B" when compared to examples different from the embodiments herein, a larger amount of light can be emitted and reflected with increased brightness.

[0096] 6A to 6F A diagram showing a process for explaining a process of manufacturing a display device according to an embodiment Figure 1 A schematic cross-sectional view taken along line AA' of Figure 6G Show Fig. 6A Floor plan.

[0097] refer to Fig. 6A , the pixel circuit PC may be formed on the substrate 100, and the insulating layer 110 covering the pixel circuit PC may be formed on the substrate 100. The pixel electrode 221 may be formed to be electrically connected to the pixel circuit PC through a contact hole of the insulating layer 110. The pixel electrode 221 may be formed by a process that may include forming a material layer constituting the pixel electrode 221 and etching the material layer. Fig. 6A As shown in , the pixel electrode 221 may be formed in an island shape to correspond to each pixel.

[0098] The pixel defining layer 120 including the opening 120OP may be formed, and the intermediate layer 222 and the counter electrode 223 may be sequentially formed. The emission layer 222b of the intermediate layer 222 may be positioned to correspond to each pixel so that the emission layer 222b may overlap or face the pixel electrode 221. The first and second functional layers 222a and 222c of the intermediate layer 222 and the counter electrode 223 may each be formed as one body so as to cover a plurality of pixels.

[0099] The thin film encapsulation layer 300 may be formed on the counter electrode 223. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 of the thin film encapsulation layer 300 may be formed by chemical vapor deposition (CVD). The organic encapsulation layer 320 may be formed by coating and hardening a monomer, or may be formed by coating a polymer. The materials of the organic light emitting diode OLED and the thin film encapsulation layer 300 may be the same as those described above.

[0100] The organic structure 60 may be formed by arranging a photosensitive organic material on the thin film encapsulation layer 300 and patterning the photosensitive organic material. The organic structure 60 may include a photosensitive organic material that may react to light of a specific wavelength band (eg, ultraviolet light (UV), etc.). Figure 6G As shown in , the organic structure 60 may completely surround the periphery of the emission area EA so as to surround the emission area EA of the organic light emitting diode OLED. In other words, the organic structure 60 may completely surround the periphery of the opening 120OP of the pixel defining layer 120. The inner width W2' between the portions of the organic structure 60 (the emission area EA is the opening 120OP of the pixel defining layer 120 between the portions of the organic structure 60) may be equal to or greater than the width W1 of the opening 120OP of the pixel defining layer 120.

[0101] The organic structure 60 may have an inclined side surface. The cross section of the organic structure 60 may have an approximately trapezoidal shape. The inclination angle α of the side surface of the organic structure 60 may be equal to or greater than about 50°. For example, the inclination angle α may be equal to or greater than about 60°.

[0102] refer to Figure 6B , the inorganic insulating layer 410A may be formed on the organic structure 60. The inorganic insulating layer 410A may be completely formed over the substrate 100. The inorganic insulating layer 410A may directly contact the top and side surfaces of the organic structure 60 and the top surface of a layer (e.g., the thin film encapsulation layer 300) disposed under the organic structure 60.

[0103] The inorganic insulating layer 410A may be formed by CVD. The inorganic insulating layer 410A may include silicon nitride. The inorganic insulating layer 410A may include silicon oxide and / or silicon oxynitride. In an embodiment, the refractive index of the inorganic insulating layer 410A including silicon nitride may be adjusted by adjusting the amount of silicon of the inorganic insulating layer 410A. For example, the refractive index of the inorganic insulating layer 410A may be from about 1.7 to about 1.9.

[0104] refer to Figure 6C and Fig.6D , the top layer 410 may be formed by patterning the inorganic insulating layer 410A. Figure 6CAs shown in , the photosensitive organic layer 62 may be formed on the inorganic insulating layer 410A. The photosensitive organic layer 62 may be patterned by using a mask M including a first transmission portion M-h1 and a second transmission portion M-h2. The photosensitive organic layer 62 may include a hole 62h and an opening 62OP, wherein the hole 62h and the opening 62OP may be formed while portions of the photosensitive organic layer 62 corresponding to the first transmission portion M-h1 and the second transmission portion M-h2, respectively, are removed.

[0105] like Fig.6D As shown in FIG. 4 , the roof layer 410 including the hole 410H and the opening 410OP may be formed by etching the inorganic insulating layer 410A using the photosensitive organic layer 62 . The opening 410OP and the hole 410H may correspond to through-holes passing through the top and bottom surfaces of the roof layer 410 .

[0106] The width W3 of the opening 410OP of the roof layer 410 may be equal to or greater than the width W1 of the opening 120OP of the pixel defining layer 120. The width W4 of the hole 410H may be about 1 μm to about 3 μm.

[0107] refer to Fig. 6E , the organic structure 60 may be removed through the hole 410H of the roof layer 410 . In an embodiment, the organic structure 60 may be removed by a development process, and the air cavity AC may be formed in a space resulting from the removal of the organic structure 60 through the hole 410H of the roof layer 410 .

[0108] like Fig. 6F As shown in , the planarization layer 500 may be formed. The planarization layer 500 may include an organic insulating material. In an embodiment, the planarization layer 500 may be formed by coating an organic material having viscosity and then hardening the organic material. Although the hole 410H may be formed in the top layer 410, the organic material including the same material as the material of the planarization layer 500 may not be arranged inside the air cavity AC, or as a result of adjusting the viscosity of the organic material constituting the planarization layer 500, a small amount of organic material may exist inside the air cavity AC.

[0109] Figure 7 A schematic cross-sectional view showing a portion of a display device according to an embodiment, and Figure 8 Show Figure 7 Magnified view of region VIII.

[0110] refer to Figure 7, the pixel circuit PC may be located on the substrate 100, and the pixel electrode 221 of the organic light emitting diode OLED may be disposed on the insulating layer 110 covering the pixel circuit PC. The organic light emitting diode OLED may include a pixel electrode 221, an intermediate layer 222, and an opposing electrode 223, and an edge of the pixel electrode 221 may be covered by a pixel defining layer 120.

[0111] The air cavity AC may be between the pixel defining layer 120 and the thin film encapsulation layer 300. For example, the air cavity AC may be located on the counter electrode 223. The roof layer 410 defining the air cavity AC may include an upper portion 140a ( Figure 8 ), lower part 140b( Figure 8 ) and side portion 140c( Figure 8 ), the upper portion 140a is separated from the top surface of the counter electrode 223, so that the air cavity AC can be between the upper portion 140a of the top layer 410 and the counter electrode 223. The lower portion 140b can be located under the upper portion 140a, and the side portion 140c can connect the upper portion 140a to the lower portion 140b. The lower portion 140b can contact the top surface of the counter electrode 223.

[0112] The lower portion 140b of the roof layer 410 may extend in a direction that may be away from the air cavity AC and may contact the top surface of the counter electrode 223. In the case where a capping layer may be disposed on the counter electrode 223, the lower portion 140b of the roof layer 410 may contact the top surface of the capping layer. The capping layer may include LiF, an inorganic insulating material, and / or an organic insulating material.

[0113] The side portion 140c of the roof layer 410 may be inclined relative to a virtual plane parallel to the main surface 101 of the substrate 100. The inclination angle α of the side portion 140c may be equal to or greater than about 50°. For example, the inclination angle α may be equal to or greater than about 60°. The height h of the air cavity AC defined by the roof layer 410 may be about 1.5 μm to about 3.5 μm, or about 2 μm to about 3 μm.

[0114] The top layer 410 may include an inorganic insulating layer including an inorganic material (e.g., silicon nitride, silicon oxide, and / or silicon oxynitride). The top layer 410 may have a refractive index greater than the refractive index n (approximately 1.0) of the air cavity AC. The difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be equal to or greater than about 0.7. For example, the refractive index of the top layer 410 may be from about 1.7 to about 1.9. Since light emitted from the organic light emitting diode OLED propagates obliquely with respect to the z-direction and the x-direction, such light may be emitted at an interface between the air cavity AC and the top layer 410 (e.g., the side 140c ( Figure 8)) and is totally reflected by the interface. As a result, the luminous efficiency of the organic light emitting diode OLED can be improved, and the brightness of the light that can be emitted can be improved.

[0115] The thin film encapsulation layer 300 may be located on the top layer 410. The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 7 As shown in , in an embodiment, the thin film encapsulation layer 300 may include a first inorganic encapsulation layer 310 , an organic encapsulation layer 320 , and a second inorganic encapsulation layer 330 .

[0116] The first inorganic encapsulation layer 310 may be formed on the roof layer 410. The first inorganic encapsulation layer 310 may contact the roof layer 410. Figure 8 As shown in , the first inorganic encapsulation layer 310 may be located on the top surface of the roof layer 410 and the side surface 410S of the roof layer 410 defining the hole 410H. Since the roof layer 410 may include the hole 410H formed in the upper portion thereof, a small amount of inorganic material 310R including the same material as that of the first inorganic encapsulation layer 310 may exist inside the air cavity AC.

[0117] The organic encapsulation layer 320 may include a material, wherein the difference between the refractive index of the material and the refractive index of the air cavity AC may be equal to or greater than about 0.5. For example, the material may be an organic material having a refractive index ranging from about 1.5 to about 1.6. In the case where the difference between the refractive index of the organic encapsulation layer 320 and the refractive index of the air cavity AC satisfies the above range, the propagation path of the light emitted from the organic light emitting diode OLED may be changed. For example, by more effectively changing the path of light that can be emitted from the organic light emitting diode OLED and continuously travels in an oblique direction relative to the above z-direction and x-direction to a path that can be at least parallel to the z-direction or thickness direction of the display device 10, the brightness of the display device may be effectively improved.

[0118] Although Figure 7 The air cavity AC defined by the roof layer 410 is shown to be disposed at two opposite sides of the emission area EA, but in a plan view, as shown in FIG. FIG. 4A to FIG. 4C As described above, the air cavity AC may be arranged to completely surround the periphery of the emission area EA so as to surround the emission area EA. Figure 4A As described above, a hole 410H of the top layer 410 may be provided to completely surround the emission area EA. Figure 4B As shown in , a plurality of holes 410H each having a slit shape may be disposed along an edge of the emission area EA. Figure 4CAs shown in , the plurality of holes 410H may be disposed to completely surround the periphery of the emission area EA so as to surround the emission area EA, and may be spaced apart from each other. The holes 410H of the roof layer 410 may have a width ranging from about 1 μm to about 3 μm.

[0119] The roof layer 410 may include an opening 410OP corresponding to the emission area EA. A width W3 of the opening 410OP of the roof layer 410 may be equal to or greater than a width W1 of the opening 120OP of the pixel defining layer 120, and may be less than a width W2 between portions of the air cavity AC located at two opposite sides of the opening 120OP, the opening 120OP of the pixel defining layer 120 being between portions of the air cavity AC.

[0120] Fig. 9 A schematic cross-sectional view showing a portion of a display device according to an embodiment, and FIG. 10A to FIG. 10C A plan view showing a portion of a display device according to an embodiment.

[0121] Although the reference Figure 7 The described roof layer 410 may include the opening 410OP overlapping with or facing the opening 120OP of the pixel defining layer 120, but the roof layer 410 may not include the opening 410OP, as may be seen in Fig. 9 As shown in FIG. 4 , the opening 410OP may not be present.

[0122] refer to Fig. 9 as well as FIG. 10A to FIG. 10C , the top layer 410 may include a hole 410H corresponding to the air cavity AC, and may be continuously formed so as to completely cover the emission area EA. The top layer 410 may include silicon nitride, silicon oxide, and / or silicon oxynitride. In other words, similar to the first inorganic encapsulation layer 310, the top layer 410 may also serve as an inorganic encapsulation layer.

[0123] The roof layer 410 may be formed to completely cover the remaining area (eg, the display area DA including the emission area EA (see FIG. 4 ) except for the at least one hole 410H. Figure 1 )), the top layer 410 may be used as an inorganic encapsulation layer similar to the first inorganic encapsulation layer 310. In an embodiment, the top layer 410 may be omitted. Fig. 9 The first inorganic encapsulation layer 310 is shown in FIG.

[0124] The top layer 410 may include a hole 410H around the periphery of the emission area EA so as to surround the emission area EA (eg, Fig. 10A ), including holes 410H each having a slit shape and extending along one side of the emission area EA (as shown in Fig. 10B), or may include holes 410H that may be spaced apart from one another along the edge of the emission area EA (as shown in FIG. Fig. 10C ).

[0125] Fig.11 A schematic cross-sectional view showing a portion of a display device according to an embodiment.

[0126] refer to Fig.11 , the display device may further include a planarization layer 500 disposed on the thin film encapsulation layer 300. The thin film encapsulation layer 300 may be disposed above the air cavity AC. Since the thin film encapsulation layer 300 may include the organic encapsulation layer 320, the organic encapsulation layer 320 may improve the flatness of the display device 10 while completely covering the elements thereunder. The planarization layer 500 may be further disposed on the thin film encapsulation layer 300, and thus the flatness of the display device 10 may be further improved. The planarization layer 500 may prevent components (e.g., the touch input layer 610 and / or the optical function layer 620) located on the planarization layer 500 from being separated or separated from the display device 10.

[0127] The touch input layer 610 may include touch electrodes arranged in the x direction and the y direction. The touch input layer 610 may sense external input by using a mutual capacitance method and / or a self capacitance method. Fig.11 It is illustrated that the touch input layer 610 may be disposed on the planarization layer 500 , but in an embodiment, the touch input layer 610 may be disposed between the thin film encapsulation layer 300 and the planarization layer 500 .

[0128] The optical function layer 620 may include an anti-reflection layer. The anti-reflection layer may include a retarder and a polarizer. In another embodiment, the anti-reflection layer may include a color filter layer. In another embodiment, the anti-reflection layer may include a destructive interference structure. The destructive interference structure may include a first reflective layer and a second reflective layer disposed on different layers. The first reflected light and the second reflected light respectively reflected by the first reflective layer and the second reflective layer may destructively interfere with each other, and thus the external light reflectivity may be reduced.

[0129] refer to Fig.11 The touch input layer 610 and / or the optical function layer 620 described above may be equally applicable to the reference Figure 3 and Fig. 9 The embodiments described and the embodiments derived therefrom.

[0130] FIG. 12A to FIG. 12E A schematic cross-sectional view showing a portion of a display device according to another embodiment.

[0131] refer to Fig. 12A, the pixel circuit PC may be formed on the substrate 100, and the insulating layer 110 covering the pixel circuit PC may be formed on the substrate 100. The pixel electrode 221 may be formed to be electrically connected to the pixel circuit PC through a contact hole of the insulating layer 110.

[0132] The pixel defining layer 120 may be formed to include an opening 120OP, and an intermediate layer 222 and an opposing electrode 223 may be formed. A capping layer may be further formed on the opposing electrode 223 to include LiF, an inorganic insulating material, or an organic insulating material. Hereinafter, for ease of description, the capping layer may be omitted.

[0133] As described above, an organic light emitting diode OLED including a pixel electrode 221, an intermediate layer 222, and a counter electrode 223 may be formed, and an organic structure 60 may be formed. The organic structure 60 may be formed by arranging a photosensitive organic material layer on the substrate 100 and then patterning the photosensitive organic material layer. The organic structure 60 may include a photosensitive organic material. The organic structure 60 may be formed to completely surround the periphery of the emission area EA so as to surround the emission area EA of the organic light emitting diode OLED, and the emission area EA may be, for example, as shown in reference Figure 6G The opening 120OP of the pixel defining layer 120 is depicted.

[0134] The organic structure 60 may have an inclined side surface. The cross section of the organic structure 60 may have an approximately trapezoidal shape. The inclination angle α of the side surface of the organic structure 60 may be equal to or greater than about 50°. For example, the inclination angle α may be equal to or greater than about 60°.

[0135] refer to Fig. 12B , the inorganic insulating layer 410A may be formed on the organic structure 60. The inorganic insulating layer 410A may be formed by CVD. The inorganic insulating layer 410A may include silicon nitride, silicon oxide, and / or silicon oxynitride. In an embodiment, the refractive index of the inorganic insulating layer 410A including silicon nitride may be adjusted by adjusting the amount of silicon of the inorganic insulating layer 410A. For example, the refractive index of the inorganic insulating layer 410A may be from about 1.7 to about 1.9.

[0136] like Fig. 12C As shown in FIG. 4 , the top layer 410 may be formed by patterning the inorganic insulating layer 410A to include holes 410H. Figure 6C Similar to the description made above, the process of patterning the inorganic insulating layer 410A may be performed by using a mask and a photosensitive organic layer. The roof layer 410 may be continuously formed to cover the area corresponding to the opening 120OP of the pixel defining layer 120. Fig. 12CThe roof layer 410 is shown to cover the opening 120OP of the pixel defining layer 120, but the roof layer 410 may include an opening 410OP corresponding to the emission area EA (see FIG. Fig.6D described).

[0137] refer to Fig.12D , the air cavity AC may be formed by removing the organic structure 60 through the hole 410H of the roof layer 410 .

[0138] The first inorganic encapsulation layer 310 may be formed on the top layer 410 in which the pores 410H may be formed. The first inorganic encapsulation layer 310 may be formed by CVD. A small amount of inorganic material 310R including the same material as that of the first inorganic encapsulation layer 310 may be disposed inside the air cavity AC during the process of forming the first inorganic encapsulation layer 310. Fig.12D As shown in the enlarged view of , the first inorganic encapsulation layer 310 may be located on the top surface of the roof layer 410 and the side surface 410S of the roof layer 410 defining the hole 410H.

[0139] refer to Fig.12E , an organic encapsulating layer 320 and a second inorganic encapsulating layer 330 may be sequentially formed on the first inorganic encapsulating layer 310. The organic encapsulating layer 320 may be formed by coating and hardening a monomer, or by coating a polymer.

[0140] Fig.13 A schematic cross-sectional view showing a portion of a display device according to another embodiment, and Fig.14 An enlarged cross-sectional view showing the air cavity AC of the display device according to such an embodiment and its surroundings is shown.

[0141] refer to Fig.13 , the pixel circuit PC may be disposed on the substrate 100 , and the pixel electrode 221 of the organic light emitting diode OLED may be disposed on the insulating layer 110 covering the pixel circuit PC.

[0142] The air cavity AC may be arranged in the propagation direction of light emitted from the organic light emitting diode OLED. In an embodiment, the air cavity AC may be between the insulating layer 110 and the thin film encapsulation layer 300. For example, the air cavity AC may be located on the pixel electrode 221. The top layer 410 defining the air cavity AC may include an upper portion, a lower portion, and a side portion, the upper portion being separated from the top surface of the insulating layer 110, so that the air cavity AC may be between the upper portion of the top layer 410 and the insulating layer 110. The lower portion may be located under the upper portion, and the side portion may connect the upper portion to the lower portion. One side of the lower portion of the top layer 410 may contact the top surface of the pixel electrode 221, and the other side of the lower portion of the top layer 410 may contact the top surface of the insulating layer 110.

[0143] The roof layer 410 may include an opening 410OP overlapping or facing the pixel electrode 221, and a width W3 of the opening 410OP may be smaller than a width W5 of the pixel electrode 221. The opening 410OP of the roof layer 410 may correspond to the emission area so as to define the emission area EA. The air cavity AC may be defined by the roof layer 410 and cover the edge of the pixel electrode 221. The roof layer 410 defining the air cavity AC may not only define the emission area EA, but also prevent arcing etc. from occurring between the edge of the counter electrode 223 and the pixel electrode 221 by increasing the distance between the counter electrode 223 and the edge of the pixel electrode 221, as similarly described above.

[0144] The side of the roof layer 410 may be inclined relative to a virtual plane parallel to the main surface 101 of the substrate 100. The inclination angle α of the side may be equal to or greater than about 50°. For example, the inclination angle α may be equal to or greater than about 60°. The height h of the air cavity AC defined by the roof layer 410 may be about 1.5 μm to about 3.5 μm, or about 2 μm to about 3 μm.

[0145] The top layer 410 may have a refractive index greater than the refractive index n (about 1.0) of the air cavity AC. The difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be equal to or greater than about 0.5. The difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be equal to or greater than about 0.6. The difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be equal to or greater than about 0.7.

[0146] The top layer 410 may include an inorganic material. For example, the top layer 410 may include an inorganic insulating layer such as silicon nitride, silicon oxide, and / or silicon oxynitride. In an embodiment, in the case where the top layer 410 includes silicon nitride, the difference between the refractive index of the air cavity AC and the refractive index of the top layer 410 may be adjusted by adjusting the amount of silicon of the top layer 410. The refractive index of the top layer 410 may be from about 1.7 to about 1.9.

[0147] refer to Fig.13 , Fig.15A and Fig. 15B , the air cavity AC may be disposed to completely surround the periphery of the emission area EA so as to surround the emission area EA, and the air cavity AC may have a ring shape. The inner width W2 of the air cavity AC having the ring shape may be equal to or greater than the width W1 of the emission area EA. The holes 410H of the top layer 410 may be spaced apart from each other, as shown in FIG. Fig.15A and Fig. 15B For example, each of the holes 410H having a slit shape may be spaced apart from each other along one side of the emission area EA (see Fig.15A ), or may be arranged to completely surround the periphery of the emission area EA so as to enclose the emission area EA (see Fig. 15B ).

[0148] The middle layer 222 may include an emission layer 222b, and the emission layer 222b may overlap with or face the opening 410OP of the top layer 410. The first functional layer 222a may be disposed under the emission layer 222b, and the second functional layer 222c may be disposed on the emission layer 222b. The first functional layer 222a may include a hole transport layer and / or a hole injection layer, and the second functional layer 222c may include an electron injection layer and / or an electron transport layer.

[0149] Like the counter electrode 223, the first functional layer 222a and / or the second functional layer 222c may be a layer that completely covers the substrate 100. A small amount of a material layer Rm may exist inside the air cavity AC, and the material layer Rm includes the same material as that of each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 provided on the roof layer 410 defining the air cavity AC. Fig.14 As shown in , there may be a small amount of material layer (i.e., material residue) Rm arranged inside the air cavity AC, the material layer Rm includes a first material layer 222a', a second material layer 222c' and a third material layer 223', the first material layer 222a' includes the same material as the first functional layer 222a, the second material layer 222c' includes the same material as the second functional layer 222c, and the third material layer 223' includes the same material as the counter electrode 223.

[0150] The organic light emitting diode OLED may be covered by a thin film encapsulation layer 300, and the organic light emitting diode OLED includes a pixel electrode 221, an intermediate layer 222, and a counter electrode 223. The thin film encapsulation layer 300 may include, for example, a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330. The first inorganic encapsulation layer 310 may be formed on the roof layer 410 and located on the top surface of the roof layer 410 and the side surface 410S of the roof layer 410 defining the hole 410H. Fig.14 As shown in , the fourth material layer 310 ′ may be located inside the air cavity AC, and the fourth material layer 310 ′ includes the same material as that of the first inorganic encapsulation layer 310 .

[0151] The organic encapsulation layer 320 may include a material, wherein the difference between the refractive index of the material and the refractive index of the air cavity AC may be equal to or greater than about 0.5. For example, the material may be an organic material having a refractive index ranging from about 1.5 to about 1.6. In the case where the difference between the refractive index of the organic encapsulation layer 320 and the refractive index of the air cavity AC satisfies the above range, the propagation path of the light emitted from the organic light emitting diode OLED may be changed. For example, by more effectively changing the path of light that may be emitted from the organic light emitting diode OLED and continuously travels obliquely relative to the z-direction and the x-direction to a path that is at least parallel to the z-direction or the thickness direction of the display device 10, the brightness of the display device may be effectively improved.

[0152] Fig.16 A schematic cross-sectional view showing a portion of a display device according to another embodiment.

[0153] refer to Fig.16 , the display device may further include a planarization layer 500 disposed on the thin film encapsulation layer 300. The thin film encapsulation layer 300 may be disposed on the air cavity AC. In other words, the thin film encapsulation layer 300 may be disposed on the top layer 410 forming the air cavity AC. Since the thin film encapsulation layer 300 may include the organic encapsulation layer 320, the organic encapsulation layer 320 may improve the flatness of the display device 10 by completely covering the elements thereunder. The planarization layer 500 may be further disposed on the thin film encapsulation layer 300, and may further improve the flatness of the display device 10. The planarization layer 500 may prevent components located on the planarization layer 500 (e.g., the touch input layer 610 and / or the optical functional layer 620) from being separated or separated from the display device 10.

[0154] FIG. 17A to FIG. 17F A schematic cross-sectional view showing a process of manufacturing a display device according to another embodiment, and Figure 17G Show Fig.17A Floor plan.

[0155] refer to Fig.17A , the pixel circuit PC may be formed on the substrate 100, and the insulating layer 110 covering the pixel circuit PC may be formed on the substrate 100. The pixel electrode 221 may be formed to be electrically connected to the pixel circuit PC through a contact hole of the insulating layer 110.

[0156] The organic structure 60 may be formed. The organic structure 60 may be formed by forming a photosensitive organic material on the substrate 100 and then patterning the photosensitive organic material. Figure 17G As shown in , the organic structure 60 may completely surround the periphery of the edge of the pixel electrode 221 so as to enclose the edge of the pixel electrode 221 .

[0157] The organic structure 60 may have an inclined side surface. The cross section of the organic structure 60 may have an approximately trapezoidal shape. The inclination angle α of the side surface of the organic structure 60 may be equal to or greater than about 50°. For example, the inclination angle α may be equal to or greater than about 60°.

[0158] refer to Fig. 17B , the inorganic insulating layer 410A may be formed on the organic structure 60. The inorganic insulating layer 410A may be formed by CVD. The inorganic insulating layer 410A may include silicon nitride. The inorganic insulating layer 410A may include silicon oxide or silicon oxynitride. In an embodiment, the refractive index of the inorganic insulating layer 410A including silicon nitride may be adjusted by adjusting the amount of silicon of the inorganic insulating layer 410A. For example, the refractive index of the inorganic insulating layer 410A may be from about 1.7 to about 1.9.

[0159] The inorganic insulating layer 410A may be completely formed over the substrate 100. The inorganic insulating layer 410A may directly contact the top and side surfaces of the organic structure 60 and the top surface of a layer including the insulating layer 110 and the pixel electrode 221 disposed under the organic structure 60.

[0160] refer to Fig. 17C , the top layer 410 may be formed by patterning the inorganic insulating layer 410A. The top layer 410 may include a hole 410H and an opening 410OP. Figure 6C Similar to the description made above, the process of patterning the top layer 410 may be performed by using a mask and a photosensitive organic layer. The opening 410OP of the top layer 410 may correspond to the emission area EA (as shown in FIG. Fig.13 The opening 410OP of the roof layer 410 may define an emission area EA.

[0161] like Fig.17D As shown in , the air cavity AC may be formed in a space in which the organic structure 60 may be arranged by removing the organic structure 60 through the hole 410H of the roof layer 410. Figure 17G As described, since the organic structure 60 may be arranged around the edge of the pixel electrode so as to surround the edge of the pixel electrode 221, the air cavity AC may also surround or surround the edge of the pixel electrode 221. The edge of the pixel electrode 221 may be covered by the roof layer 410 and located inside the air cavity AC.

[0162] refer to Fig.17E, the first functional layer 222a may be formed on the roof layer 410. The emission layer 222b may be formed at a position corresponding to the opening 410OP of the roof layer 410. The second functional layer 222c and the counter electrode 223 may be sequentially formed on the emission layer 222b. The first functional layer 222a, the second functional layer 222c, and the counter electrode 223 may be formed as one body so as to cover at least the display area DA.

[0163] Each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223 may be formed by thermal evaporation. During the process of forming each of the first functional layer 222a, the second functional layer 222c, and the counter electrode 223, the materials constituting the above layers may also be located inside the air cavity AC through the hole 410H of the roof layer 410. Fig.17E The material layer Rm shown may be provided to include the same material as those of the first functional layer 222 a , the second functional layer 222 c , and the opposing electrode 223 .

[0164] like Fig.17F As shown in FIG. 1 , the first inorganic encapsulating layer 310 , the organic encapsulating layer 320 , and the second inorganic encapsulating layer 330 may be sequentially formed.

[0165] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be formed by CVD, and the first inorganic encapsulation layer 310 may be located on the top surface of the roof layer 410 and the side surface of the roof layer 410 defining the hole 410H. During the process of forming the first inorganic encapsulation layer 310, a small amount of deposited material of the first inorganic encapsulation layer 310 may exist inside the air cavity AC, and the deposited material may be arranged through the hole 410H. The specific structure may be the same as that of the reference Fig.14 The specific structure described is the same. Through adjustment of the viscosity of the organic material constituting the organic encapsulation layer 320, no material of the organic encapsulation layer 320 or a small amount of the organic encapsulation layer 320 is arranged inside the air cavity AC. The organic encapsulation layer 320 can be formed by coating a monomer and then hardening the monomer or coating a polymer.

[0166] Fig.18 A schematic cross-sectional view of a display device 10A according to another embodiment is shown.

[0167] refer to Fig.18 , the display device 10A can emit different colors of light for each pixel. For example, the first organic light emitting diode OLED1, the second organic light emitting diode OLED2, and the third organic light emitting diode OLED3 corresponding to the corresponding pixel can be arranged on the substrate 100. The first organic light emitting diode OLED1, the second organic light emitting diode OLED2, and the third organic light emitting diode OLED3 can respectively emit different colors of light, for example, red light L R, Green Light L G and Blu-ray L B The first organic light emitting diode OLED1 may be located in a red pixel, the second organic light emitting diode OLED2 may be located in a green pixel, and the third organic light emitting diode OLED3 may be located in a blue pixel.

[0168] The red light L emitted from the first organic light emitting diode OLED1, the second organic light emitting diode OLED2 and the third organic light emitting diode OLED3 respectively R , Green Light L G and Blu-ray L B The light traveling obliquely may travel in a direction away from the substrate 100 and may be totally reflected at the interface between the air cavity AC and the roof layer 410 and may travel approximately in the z direction. For example, the light traveling obliquely may be totally reflected from the side of the roof layer 410 forming the air cavity AC.

[0169] The emission layer provided to each of the first organic light emitting diode OLED1, the second organic light emitting diode OLED2, and the third organic light emitting diode OLED3 may include a low molecular weight organic material or a polymer organic material. The emission layer provided to each of the first organic light emitting diode OLED1, the second organic light emitting diode OLED2, and the third organic light emitting diode OLED3 may include an organic material and / or quantum dots.

[0170] refer to Fig.18 The specific structure of each pixel of the display device 10A may have a structure according to reference Figures 3 to 17G The described embodiments and / or structures of the embodiments derived therefrom.

[0171] Fig.19 A schematic cross-sectional view of a display device 10B according to the embodiment is shown.

[0172] refer to Fig.19 The display device 10B may include a first organic light emitting diode OLED1, a second organic light emitting diode OLED2, and a third organic light emitting diode OLED3 corresponding to the corresponding pixels, and the first organic light emitting diode OLED1, the second organic light emitting diode OLED2, and the third organic light emitting diode OLED3 emit blue light L B .

[0173] The blue light L emitted from the corresponding pixel B While passing through the color conversion filter and the color filter located on the propagation path of the light, the light is converted into red light L R , Green Light L G and Blu-ray L B .

[0174] For example, the blue light L emitted from the first organic light emitting diode OLED1 B The first color converter 631 may be converted into red light, and when the converted light passes through the red filter 641, the color purity of the converted light may be improved and may be emitted to the outside. The first color converter 631 may include quantum dots and scattering particles. The quantum dots may have a core-shell structure including a core and a shell, the core including nanocrystals, and the shell surrounding the core. The core of the quantum dot may include one of a group VI compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and a combination thereof.

[0175] The blue light L emitted from the second organic light emitting diode OLED2 B The green light may be converted into green light by the second color converter 632, and when the converted light passes through the green filter 642, the color purity of the converted light may be improved and may be emitted to the outside. The second color converter 632 may include quantum dots and scattering particles. The quantum dots may have a core-shell structure including a core and a shell, the core including nanocrystals, and the shell surrounding the core. The core of the quantum dot may include one of a II-VI group compound, a III-V group compound, a IV-VI group compound, a IV group element, a IV group compound, and a combination thereof. The size and / or structure of the quantum dots of the second color converter 632 may be different from the size and / or structure of the quantum dots of the first color converter 631.

[0176] The blue light L emitted from the third organic light emitting diode OLED3 B The light emitting diode 640 may pass through the transmission region 633 and the blue color filter 643 and may be immediately emitted to the outside. The transmission region 633 may include a light emitting diode such as TiO 2 of scattered particles.

[0177] The light shielding portion 650 may be provided between two adjacent elements among the first color converter 631, the second color converter 632, and the transmission region 633, and / or provided between two adjacent elements among the red filter 641, the green filter 642, and the blue filter 643. The light shielding portion 650 may include a black matrix.

[0178] refer to Fig.19 The specific structure of each pixel of the display device 10B may have a structure according to reference Figures 3 to 17G The described embodiments and / or structures of the embodiments derived therefrom.

[0179] The display device according to one or more embodiments may improve emission efficiency of light emitted from a display element, improve brightness, and extend the life of the display device.

[0180] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for the purpose of limitation. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the appended claims.

Claims

1. A display device, comprising: substrate; a display element disposed on the substrate and including a pixel electrode, a counter electrode, and an emission layer between the pixel electrode and the counter electrode; a top layer defining an air cavity, the air cavity being arranged to surround the display element; as well as a thin film encapsulation layer, the thin film encapsulation layer covering the display element and comprising at least one organic encapsulation layer and at least one inorganic encapsulation layer, wherein the refractive index of the top layer is greater than the refractive index of the air cavity, wherein the top layer includes a lower portion, an upper portion, and a side portion connecting the lower portion to the upper portion, the side portion is inclined relative to the main surface of the substrate, and the upper portion has a hole overlapping the air cavity, and The at least one organic encapsulation layer directly contacts the air cavity, and a difference between a refractive index of the at least one organic encapsulation layer and the refractive index of the air cavity is equal to or greater than 0.

5.

2. The display device according to claim 1, wherein: The top layer includes an inorganic insulating layer.

3. The display device according to claim 2, wherein: The top layer includes at least one of silicon nitride, silicon oxide, and silicon oxynitride.

4. The display device according to claim 1, wherein: An inclination angle of the side portion relative to a plane parallel to the main surface of the substrate is equal to or greater than 50°.

5. The display device according to claim 1, further comprising: a pixel defining layer, the pixel defining layer covering an edge of the pixel electrode and comprising an opening corresponding to the pixel electrode, Wherein, the air cavity is located on the pixel defining layer.

6. The display device according to claim 1, wherein: A portion of the air cavity overlaps an edge of the pixel electrode.

7. The display device according to claim 6, wherein: The edge of the pixel electrode is located inside the air cavity.

8. The display device according to claim 7, wherein: The roof layer includes an opening having a width smaller than a width of the pixel electrode.

9. A display device, comprising: substrate; a display element disposed on the substrate and including a pixel electrode, a counter electrode, and an emission layer between the pixel electrode and the counter electrode; a top layer defining an air cavity and including an inclined side portion, the inclined side portion being located on a propagation path of light emitted from the display element and the inclined side portion defining an interface between the top layer and the air cavity to change the propagation path of the light from a direction inclined relative to a thickness direction of the substrate to a direction at least parallel to the thickness direction of the substrate; as well as a thin film encapsulation layer, the thin film encapsulation layer covering the display element and comprising at least one organic encapsulation layer and at least one inorganic encapsulation layer, wherein the refractive index of the top layer is greater than the refractive index of the air cavity, wherein the top layer further comprises a lower portion and an upper portion, the inclined side portion connects the lower portion to the upper portion, and the upper portion has a hole overlapping the air cavity, and The at least one organic encapsulation layer directly contacts the air cavity, and a difference between a refractive index of the at least one organic encapsulation layer and the refractive index of the air cavity is equal to or greater than 0.

5.

10. The display device according to claim 9, wherein: The air cavity completely surrounds the display element.

11. The display device according to claim 9, wherein: A difference between the refractive index of the top layer and the refractive index of the air cavity is equal to or greater than 0.

7.

12. The display device according to claim 9, wherein: The roof layer includes an inorganic insulating layer, and an inclination angle of the inclined side portion relative to a plane parallel to a main surface of the substrate is equal to or greater than 50°.

13. The display device according to claim 9, wherein: The top layer includes an opening corresponding to the emission layer of the display element.

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