Semiconductor device package and method of manufacturing the same

Abstract

A heat conducting device includes a first conducting plate, a second conducting plate, a plurality of cores, and a fluid. The first conducting plate has a first portion proximate to an edge of the first conducting plate and a second portion distal to the edge. The second conducting plate has a first portion proximate to the edge of the first conducting plate and a second portion distal to the edge. The first portion and the second portion of the first conducting plate are respectively connected to the first portion and the second portion of the second conducting plate to define a chamber. The plurality of cores are disposed within the chamber. The fluid is disposed within the chamber.

Description

Technical Field

[0001] This invention relates to a semiconductor device package, and more particularly to a semiconductor device package including a heat dissipation structure. Background Technology

[0002] The semiconductor industry has witnessed an increase in the integration density of various electronic components within semiconductor device packages. This increased integration density typically corresponds to an increased power density within the semiconductor device package. In some implementations, as the power density of the semiconductor device package increases, heat dissipation can become desirable. Therefore, in some implementations, it can be useful to provide semiconductor device packages with improved thermal conductivity. Summary of the Invention

[0003] In some embodiments, the heat-conducting device includes a first conductive plate, a second conductive plate, a plurality of cores, and a fluid. The first conductive plate has a first portion adjacent to an edge of the first conductive plate and a second portion distant from the edge. The second conductive plate has a first portion adjacent to an edge of the first conductive plate and a second portion distant from the edge. The first and second portions of the first conductive plate are respectively connected to the first and second portions of the second conductive plate to define a chamber. The plurality of cores are disposed within the chamber. The fluid is disposed within the chamber.

[0004] In some embodiments, a semiconductor device package includes a carrier, a first electronic component, and a thermally conductive device. The first electronic component is disposed on the carrier. The first electronic component has an active surface facing the carrier and a rear surface opposite to the active surface. The thermally conductive device has a first bonding surface disposed on the rear surface of the first electronic component and a cavity disposed on the carrier and surrounding the first electronic component. The thermally conductive device includes a plurality of cores disposed within the cavity and fluid disposed within the cavity.

[0005] In some embodiments, a semiconductor device package includes a carrier, an electronic component, and a thermally conductive device. The electronic component is disposed on the carrier. A first electronic component has an active surface facing the carrier and a rear surface opposite the active surface. The thermally conductive device has a first bonding surface disposed on the rear surface of the electronic component and a cavity disposed on the carrier and surrounding the electronic component. The thermally conductive device includes a plurality of cores disposed within the cavity and a fluid disposed within the cavity. When the electronic component is configured for operation, at least a portion of the fluid evaporates into a gas. Attached Figure Description

[0006] Some aspects of embodiments of the invention will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various structures may not be drawn to scale, and the dimensions of the various structures may be arbitrarily increased or decreased for clarity of discussion.

[0007] Figure 1This is a cross-sectional view of a heat-conducting device according to some embodiments of the present invention.

[0008] Figure 2 This is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0009] Figure 3 This is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0010] Figure 4 This is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0011] Figure 5 This is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0012] Figure 6 This is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0013] Figure 7 This is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0014] Figure 8 This is a cross-sectional view of a thermal module according to some embodiments of the present invention. Detailed Implementation

[0015] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to illustrate certain aspects of the invention. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments where the first and second features are formed or disposed in direct contact, and may also include embodiments where additional features may be formed or disposed between the first and second features such that the first and second features are not in direct contact. Additionally, reference numerals and / or letters may be repeated in various instances of the invention. This repetition is for the purpose of simplicity and clarity and does not, in itself, define a relationship between the various embodiments and / or configurations discussed.

[0016] Unless otherwise specified, spatial descriptions such as "above," "below," "upper," "left," "right," "lower," "top," "bottom," "vertical," "horizontal," "side," "above," "below," "upper part," "above," "below," etc., are relative to the orientation shown in the figures. It should be understood that the spatial descriptions used herein are for illustrative purposes only, and actual embodiments of the structures described herein can be arranged in space in any orientation or manner, provided that the advantages of the embodiments of the invention are not affected by such arrangements.

[0017] Figure 1 This is a cross-sectional view of a heat-conducting device 10 according to some embodiments of the present invention. In some embodiments, the heat-conducting device 10 is a vapor chamber. The heat-conducting device 10 includes conductive layers 101, 102, a plurality of cores 110, and a fluid 120.

[0018] Conductive layers 101 and 102 may comprise or be formed of a material with high thermal conductivity, such as tungsten, copper, aluminum, magnesium, nickel, gold, silver, alumina, beryllium oxide, or the like. In some embodiments, conductive layers 101 and 102 are metal plates (e.g., copper plates). In some embodiments, conductive layer 101 is joined or bonded to conductive layer 102 to define a chamber 10c. For example, the edges of conductive layers 101 and 102 may be sealed to define a bonding surface 10a1. For example, the edge of conductive layer 101 contacts the edge of conductive layer 102. In some embodiments, a portion of conductive layer 101 at or near the center of conductive layer 101 and a portion of conductive layer 102 at or near the center of conductive layer 102 may be joined or bonded to each other to define a bonding surface 10a2. For example, a portion of conductive layer 101 contacts a portion of conductive layer 102. Figure 1 As shown, chamber 10c surrounds mating surface 10a2 to define a loop. Chamber 10c and mating surface 10a2 may define recess 10r. In some embodiments, the shape of chamber 10c may vary depending on different design requirements.

[0019] The core 110 is disposed within the chamber 10c. The core 110 is disposed on or adjacent to the inner surface of the chamber 10c. For example... Figure 1 As shown, the core 110 is disposed on or adjacent to the upper surface 10c1 and lower surface 10c2 of the chamber 10c. In other embodiments, the core 110 may be disposed on or adjacent to only the upper surface 10c1 and lower surface 10c2 of the chamber 10c. In other embodiments, the core 110 may be further disposed on or adjacent to only the upper surface 10c1 and lower surface 10c2 of the chamber 10c. In some embodiments, the core 110 may be further disposed on or adjacent to a transverse surface extending between the upper surface 10c1 and lower surface 10c2 of the chamber 10c. In some embodiments, the core 110 may be formed of or comprise sintered powder, mesh, grooves, or any combination thereof. In some embodiments, the core 110 may be formed on the inner surface of the chamber 10c by, for example, sintering, electroplating or any other suitable semiconductor manufacturing process.

[0020] Fluid 120 (or working fluid) is disposed within chamber 10c. The material of fluid 120 is selected based on the temperature at which the heat-conducting device 10 can operate (e.g., the operating temperature). For example, fluid 120 is selected such that chamber 10c contains both vapor and liquid above the operating temperature range. In some embodiments, fluid 120 may contain, for example, water or an organic solution, such as ammonia, alcohol, ethanol, or any other suitable material.

[0021] In some embodiments, fluid 120 is in a liquid state below the operating temperature. In other embodiments, depending on different design requirements, fluid 120 may be in both a liquid state and a gaseous state below the operating temperature. At or above the operating temperature, at least a portion of fluid 120 evaporates into a gas or vapor. The evaporated gas travels from a location with a relatively high temperature to another location with a relatively low temperature, and subsequently the gas is cooled (or condensed) at the location with the relatively low temperature and transforms into a liquid (or saturated liquid). Saturated liquid can travel from a location with a relatively low temperature to a location with a relatively high temperature. In some embodiments, the liquid may flow along and adjacent to core 110. When the core 110 is disposed on or adjacent to both the upper surface 10c1 and the lower surface 10c2 of the chamber 10c, the liquid will travel in one direction along and adjacent to both the upper surface 10c1 and the lower surface 10c2, and the vapor will travel in the opposite direction between the upper surface 10c1 and the lower surface 10c2. When the core 110 is disposed only on or adjacent to the upper surface 10c1 of the chamber 10c, the liquid will travel in one direction along and adjacent to the upper surface 10c1 of the chamber 10c, and the vapor will travel in the opposite direction along and adjacent to the lower surface 10c2 of the chamber 10c.

[0022] Figure 2 This illustration shows a cross-sectional view of a semiconductor device package 2 according to some embodiments of the present invention. The semiconductor device package 2 includes a carrier, electronic components 21, a thermal interface material (TIM) 22, and such... Figure 1 The heat-conducting device 10 shown is shown.

[0023] The carrier 20 may be, for example, a printed circuit board, such as a paper-based copper foil laminate, a composite copper foil laminate, or a polymer-impregnated glass fiber copper foil laminate. The carrier 20 may include interconnect structures, such as a redistribution layer (RDL) or a grounding element. In some embodiments, the carrier 20 comprises a ceramic material or a metal plate. In some embodiments, the carrier 20 may include a substrate, such as an organic substrate or a lead frame. In some embodiments, the carrier 20 may include a bilayer substrate comprising a core layer and conductive materials and / or structures disposed on the upper and lower surfaces of the carrier 20. The conductive materials and / or structures may comprise multiple traces.

[0024] Electronic component 21 is disposed on carrier 20. Electronic component 21 has an active surface and a rear surface opposite to the active surface. The active surface of electronic component 21 faces carrier 20 and is electrically connected to carrier via electrical contacts (e.g., conductive bumps or copper pillars). Electronic component 21 may be a chip or die containing a semiconductor substrate, one or more integrated circuit devices, and one or more overlay interconnect structures. The integrated circuit devices may include active devices such as transistors and / or passive devices such as resistors, capacitors, inductors, or combinations thereof.

[0025] TIM 22 is disposed on the rear surface of electronic component 21. In some embodiments, TIM 24 contacts the rear surface of electronic component 21, which can provide enhanced heat dissipation for electronic component 21. In some embodiments, TIM 22 can be replaced by solder or other materials suitable for heat dissipation (e.g., thermally conductive materials, such as materials containing metals).

[0026] A heat-conducting device 10 is mounted on a TIM 22. In some embodiments, a bonding surface 10a2 of the heat-conducting device 10 is mounted on the TIM 22. In some embodiments, the area of ​​the bonding surface 10a2 is equal to or greater than the area of ​​the rear surface of the TIM 22 or the electronic component 21. A conductive layer 102 of the heat-conducting device 10 contacts the TIM 22. A chamber 10c of the heat-conducting device 10 is mounted on a carrier 20 and surrounds the electronic component 21. The chamber 10c of the heat-conducting device 10 is attached to the carrier by an adhesive layer 10h (e.g., glue or tape). A recess 10r is provided for receiving the electronic component 21. In some embodiments, the heat-conducting device 10 may extend beyond the lateral surface of the carrier 20. In some embodiments, a heat sink (not shown) may be mounted on the heat-conducting device 10 to form a thermal module.

[0027] In some embodiments, the heat-conducting device 10 may act as a heat flux converter, cooling the high heat flux from the electronic component 21 and converting it into a lower heat flux. For example, when the electronic component 21 is operational, the heat generated by the electronic component 21 is transferred to the heat-conducting device 10 via the TIM 22. The temperature of a portion of the chamber 10c of the heat-conducting device 10 adjacent to the electronic component 21 increases, causing the fluid 120 within the chamber 10c and adjacent to the electronic component 21 to evaporate into a gas or vapor. The evaporated gas travels from the location adjacent to the electronic component 21 to another location away from the electronic component 21, and then the gas is cooled (or condensed) at the location away from the electronic component 21 and becomes a liquid (or saturated liquid). The saturated liquid can travel from the location away from the electronic component 21 to the location adjacent to the electronic component 21. In some embodiments, liquid may flow along and adjacent to core 110, which is disposed on or adjacent to both upper surface 10c1 and lower surface 10c2 of chamber 10c, and vapor will travel between upper surface 10c1 and lower surface 10c2 of chamber 10c.

[0028] In some existing semiconductor device packages, copper heat sinks are mounted on the TIM (Tilt-Installation Molding) to provide heat dissipation for the chip. However, because the thermal conductivity K of copper is approximately 400 W / mK, the effective heat dissipation area of ​​the heat sink is only 1.06 times the area of ​​the chip's back surface, which is insufficient for chips with relatively high power. Figure 2 In the embodiments described, in the horizontal direction (K) xy The thermal conductivity of the chamber 10c of the heat-conducting device 10 is approximately 4000 W / mK, and therefore the effective heat dissipation area of ​​the heat-conducting device 10 is approximately 1.67 times the area of ​​the rear surface of the TIM 22 or electronic component 21. This will enhance the heat dissipation of the electronic component 21 and increase its performance. In some embodiments, the effective heat dissipation area of ​​the heat-conducting device 10 is greater than 56% of the effective heat dissipation area of ​​the copper heat sink.

[0029] In some embodiments, the conductive layers 101 and 102 of the heat-conducting device 10 above the TIM 22 and electronic component 21 are not sealed. For example, the chamber 10c of the heat-conducting device 10 is disposed on the TIM 22 and electronic component 21. However, the thermal conductivity of the chamber 10c of the heat-conducting device 10 is lower in the vertical direction (K). z The value is approximately 65 W / mK, which will hinder heat dissipation in the vertical direction. According to... Figure 2In the embodiment, the conductive layers 101 and 102 of the heat-conducting device 10 above the TIM 22 and electronic component 21 are sealed (i.e., the bonding surface 10a2 is disposed on the TIM 22), and the thermal conductivity of the bonding surface 10a2 is about 400 W / mK in the vertical direction, which will have better heat dissipation capabilities.

[0030] Figure 3 A cross-sectional view of a semiconductor device package 3 according to some embodiments of the present invention is illustrated. The semiconductor device package 3 is similar to... Figure 2 The semiconductor device package 2 shown is described below, and the differences therebetween are further described.

[0031] The semiconductor device package 3 further includes an electronic component 31 disposed on a carrier 20. Depending on different design specifications, the electronic component 31 may be the same as or different from the electronic component 21. Conductive layers 101 and 102 are connected or sealed to define a bonding surface 10a3 above the electronic component 31. The thermally conductive device 10 further includes a recess 10r1 to receive the electronic component 31. The recess 10r1 may be defined by a cavity 10c and the bonding surface 10a3 above the electronic component 31. In some embodiments, the semiconductor device package 3 may include any number of electronic components, and the thermally conductive device 10 may be included on multiple bonding surfaces above the corresponding electronic components. For example, the semiconductor device package 3 may include N electronic components, and the thermally conductive device 10 may be included on N bonding surfaces above the corresponding electronic components, where N is an integer greater than 1.

[0032] Figure 4 This illustration shows a cross-sectional view of a semiconductor device package 4 according to some embodiments of the present invention. The semiconductor device package 4 is similar to... Figure 2 The semiconductor device package 2 is described below, and the differences between them are described below.

[0033] exist Figure 2 In this configuration, the bonding surface 10a1 is lower than the bonding surface 10a2. For example, the distance between the bonding surface 10a1 and the carrier 20 is less than the distance between the bonding surface 10a2 and the carrier 20. Figure 4 In this configuration, the bonding surface 10a1 and the bonding surface 10a2 are substantially coplanar. For example, the distance between the bonding surface 10a1 and the carrier 20 is substantially the same as the distance between the bonding surface 10a2 and the carrier 20.

[0034] Figure 5 This illustrates a cross-sectional view of a semiconductor device package 5 according to some embodiments of the present invention. The semiconductor device package 5 is similar to... Figure 2 The semiconductor device package 2 is described below, and the differences between them are described below.

[0035] The semiconductor device package 5 further includes a package body 50 disposed on a carrier 20 to cover the electronic component 21. For example, the package body 50 is disposed within a recess 10r defined by a bonding surface 10a2 and a chamber 10c. In some embodiments, the package body 50 comprises, for example, one or more organic materials (e.g., molding compounds, bismaleimide triazine (BT), polyimide (PI), polybenzoxazole (PBO), solder resist, Ajinomoto deposited film (ABF), polypropylene (PP), epoxy materials, or combinations of two or more thereof), inorganic materials (e.g., silicon, glass, ceramics, quartz, or combinations of two or more thereof), liquid film materials, or dry film materials, or combinations of two or more thereof.

[0036] Figure 6 A cross-sectional view of a semiconductor device package 6 according to some embodiments of the present invention is illustrated. The semiconductor device package 6 is similar to... Figure 5 The semiconductor device package 5 is described below, and the differences between them are described below.

[0037] The semiconductor device package 6 further includes an electronic component 61 disposed on a thermally conductive device 10. Depending on different design specifications, the electronic component 61 may be the same as or different from the electronic component 21. In some embodiments, the bonding surface 10a2 of the thermally conductive device 10 may include a plurality of openings 10o penetrating the bonding surface 10a2. The electronic component 61 is electrically connected to the electronic component 21 through the openings. In some embodiments, an underfill 61u may be disposed between the active surface of the electronic component 61 and the thermally conductive device 10 to cover the active surface of the electronic component 61.

[0038] Figure 7 A cross-sectional view illustrating a semiconductor device package 7 according to some embodiments of the present invention is shown. The semiconductor device package 7 is similar to... Figure 6 The semiconductor device package 6 is described below, and the differences between them are described below.

[0039] The semiconductor device package 7 further includes a package body 70 disposed on the thermally conductive device 10 to cover the electronic component 61 and the underfill 61u. In some embodiments, the package body 70 and the package body 50 may contain the same material. Alternatively, the package body 70 and the package body 50 may contain different materials.

[0040] Figure 8 A cross-sectional view illustrating a thermal module 8 according to some embodiments of the present invention is provided. The thermal module 8 includes, for example,... Figure 2 The semiconductor device shown is packaged and disposed on a heat sink 80 on a heat-conducting device 10. In some embodiments, the heat sink 80 may be disposed on... Figures 2 to 6 The semiconductor device described herein is packaged on the heat-conducting device 10 of any one of the semiconductor devices 2 to 6 to form a thermal module.

[0041] As used herein, unless the context clearly indicates otherwise, the singular terms “a / an” and “the” may include multiple references.

[0042] As used herein, the terms “conductive,” “electrically conductive,” and “conductivity” refer to the ability to conduct electric current. Conductive materials typically indicate those that exhibit very little or no resistance to the flow of electric current. One measure of conductivity is Siemens per meter (S / m). Generally, conductive materials are those with a conductivity greater than approximately 10-1. 4 S / m (e.g., at least 10) 5 S / m or at least 10 6 A material with an electrical conductivity of (S / m). The electrical conductivity of the material may sometimes vary with temperature. Unless otherwise specified, the electrical conductivity of the material is measured at room temperature.

[0043] As used herein, the terms “approximately,” “substantially,” “substantially,” and “about” are used to describe and explain small variations. When used in conjunction with an event or situation, the terms may refer to examples where the event or situation occurred precisely or where it occurred very approximately. For example, when used in conjunction with numerical values, the terms may refer to a range of variation less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if the difference between two numerical values ​​is less than or equal to ±10% of the average of the values ​​(e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%), then the two numerical values ​​may be considered “substantially” the same or equal. For example, "essentially parallel" can refer to an angular variation of less than or equal to ±10° relative to 0°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. Similarly, "essentially perpendicular" can refer to an angular variation of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

[0044] Additionally, quantities, ratios, and other numerical values ​​are sometimes presented in range format in this document. It should be understood that this range format is used for convenience and brevity, and should be interpreted flexibly to include not only the numerical values ​​explicitly defined as range limits, but also all individual numerical values ​​or subranges covered within that range, as if each numerical value and subrange were explicitly defined.

[0045] Although the invention has been described and illustrated with reference to specific embodiments thereof, such description and illustration are not intended to limit the invention. Those skilled in the art will understand that various changes and substitutions may be made without departing from the true spirit and scope of the invention as defined by the appended claims. Illustrations may not be drawn to scale. Due to manufacturing processes and tolerances, artistic representations of the invention may differ from actual devices. Other embodiments of the invention may exist that are not specifically described. This specification and drawings should be considered illustrative rather than restrictive. Modifications may be made to adapt particular circumstances, materials, compositions, methods, or processes to the objectives, spirit, and scope of the invention. All such modifications are intended to be within the scope of the appended claims. While the methods disclosed herein have been described with reference to specific operations performed in a particular order, it should be understood that these operations may be combined, subdivided, or reordered to form equivalent methods without departing from the teachings of the invention. Accordingly, unless specifically indicated herein, the order and grouping of operations are not limitations of the invention.

Claims

1. A heat-conducting device, comprising: A first conductive plate has a first portion adjacent to an edge of the first conductive plate and a second portion away from the edge; A second conductive plate has a first portion adjacent to an edge of the first conductive plate and a second portion away from the edge, wherein the first portion and the second portion of the first conductive plate are respectively connected to the first portion and the second portion of the second conductive plate to define a cavity, wherein the second portion of the first conductive plate is connected to the second portion of the second conductive plate to define a bonding surface, and the cavity surrounds the bonding surface; Multiple cores are placed within the cavity; as well as The fluid contained within the chamber.

2. The heat-conducting device according to claim 1, wherein... The chamber has an upper surface and a lower surface opposite to the upper surface; and The core is positioned adjacent to the upper surface and / or the lower surface of the chamber.

3. The heat-conducting device according to claim 1, wherein... The first conductive plate has a third portion between the first portion and the second portion; The second conductive plate has a third portion between the first portion and the second portion; and The third portion of the first conductive plate is spaced apart from the third portion of the second conductive plate.

4. The heat-conducting device according to claim 1, wherein the mating surface and the chamber define a recess.

5. The heat-conducting device according to claim 1, wherein the core comprises sintered powder, mesh, groove, or any combination thereof.

6. The heat-conducting device according to claim 1, wherein the fluid comprises water or an organic solution.

7. A semiconductor device package comprising: carrier; A first electronic component is disposed on the carrier, the first electronic component having an active surface facing the carrier and a rear surface opposite to the active surface; as well as The heat conduction device includes: A first conductive plate having a first portion adjacent to an edge of the first conductive plate and a second portion above the rear surface of the first electronic component; The second conductive plate has a first portion adjacent to the edge of the first conductive plate and a second portion above the rear surface of the first electronic assembly. The first and second portions of the first conductive plate are correspondingly connected to the first and second portions of the second conductive plate to define a cavity, the cavity being disposed on a first bonding surface on the rear surface of the first electronic assembly and disposed on the carrier and surrounding the first electronic assembly. Wherein, the second portion of the first conductive plate is connected to the second portion of the second conductive plate to define the first bonding surface; and The first portion of the first conductive plate is connected to the first portion of the second conductive plate to define a second bonding surface. The heat-conducting device includes a plurality of cores disposed within the chamber and a fluid disposed within the chamber.

8. The semiconductor device package of claim 7, wherein the distance between the first bonding surface and the carrier is greater than the distance between the second bonding surface and the carrier.

9. The semiconductor device package of claim 7, wherein the distance between the first bonding surface and the carrier is substantially the same as the distance between the second bonding surface and the carrier.

10. The semiconductor device package of claim 7, wherein The first conductive plate has a third portion between the first portion and the second portion; The second conductive plate has a third portion between the first portion and the second portion; and The third portion of the first conductive plate is spaced apart from the third portion of the second conductive plate.

11. The semiconductor device package of claim 7, wherein... The chamber has an upper surface and a lower surface opposite to the upper surface; and The core is positioned adjacent to the upper surface and / or the lower surface of the chamber.

12. The semiconductor device package of claim 7, further comprising a thermal interface material disposed between the first bonding surface of the thermally conductive device and the rear surface of the first electronic component.

13. The semiconductor device package of claim 7, wherein the first bonding surface of the thermally conductive device and the chamber define a recess to receive the first electronic component.

14. The semiconductor device package of claim 13, further comprising a first package body disposed within the recess and covering the first electronic component.

15. The semiconductor device package of claim 7, further comprising a second electronic component disposed on the first bonding surface of the thermally conductive device, wherein the first bonding surface of the thermally conductive device has a plurality of openings, and the second electronic component is electrically connected to the first electronic component through the openings.

16. The semiconductor device package of claim 15, further comprising a second package body disposed on the thermally conductive device and covering the second electronic component.

17. The semiconductor device package of claim 7, further comprising a heat sink disposed on the thermally conductive device.

18. A semiconductor device package comprising: carrier; An electronic component disposed on the carrier, the electronic component having an active surface facing the carrier and a rear surface opposite to the active surface; as well as The heat conduction device includes: A first conductive plate has a first portion adjacent to an edge of the first conductive plate and a second portion away from the edge; A second conductive plate has a first portion adjacent to an edge of the first conductive plate and a second portion distant from the edge, wherein the first and second portions of the first conductive plate are respectively connected to the first and second portions of the second conductive plate to define a chamber. The second portion of the first conductive plate is connected to the second portion of the second conductive plate to define a bonding surface, the bonding surface being disposed on the rear surface of the electronic component, the chamber being disposed on the carrier and surrounding the electronic component, wherein the heat-conducting device includes a plurality of cores disposed within the chamber and fluid disposed within the chamber, and When the electronic components are configured to operate, at least a portion of the fluid evaporates into a gas.

19. The semiconductor device package of claim 18, wherein the gas flows from a first portion of the chamber adjacent to the electronic component to a second portion of the chamber remote from the electronic component.

20. The semiconductor device package of claim 19, wherein the gas condenses into a liquid at the second portion of the chamber, and the liquid flows from the second portion of the chamber to the first portion of the chamber.

21. The semiconductor device package of claim 20, wherein the liquid flows along and adjacent to the core.

22. The semiconductor device package of claim 20, wherein the gas flow is away from the core.

23. The semiconductor device package of claim 18, wherein the effective area for heat dissipation of the thermal conductive device is about 1.67 times the area of ​​the rear surface of the electronic component.

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