Backlight unit, display device including the same, and manufacturing method thereof

Abstract

The present disclosure provides a backlight unit, a display device including the same, and a manufacturing method thereof. The backlight unit according to an embodiment includes a first substrate, a plurality of LED chips arranged on one side of the first substrate and emitting light of a first color, a second substrate disposed opposite the one side of the first substrate, and a plurality of light modulation patterns arranged on one side of the second substrate to respectively overlap the plurality of LED chips, each of the light modulation patterns including a plurality of first wavelength conversion patterns that convert the light of the first color into light of a second color, the first wavelength conversion pattern including a first wavelength conversion layer disposed on the one side of the second substrate, a first organic encapsulation layer disposed on the first wavelength conversion layer, and a partition structure covering the first wavelength conversion layer and the first organic encapsulation layer, the partition structure including a first hole pattern exposing at least a portion of the first organic encapsulation layer.

Description

Technical Field

[0001] This disclosure relates to a backlight unit, a display device including the backlight unit, and a method for manufacturing the backlight unit. Background Technology

[0002] With the development of multimedia, the importance of display devices is gradually increasing. In response, various display devices such as Liquid Crystal Display Devices (LCDs) and Organic Light Emitting Diode Display Devices (OLEDs) are being developed.

[0003] Since liquid crystal display devices are light-receiving elements that cannot emit light themselves but adjust the transmittance of light coming from the outside to display images, they require an additional device, namely a backlight unit, to illuminate the liquid crystal panel.

[0004] Recently, light-emitting diodes (LEDs) have attracted attention as the light source for backlight units in liquid crystal display devices. Due to their long lifespan, low power consumption, fast response speed, and excellent initial driving characteristics, LEDs are widely used as backlight units in liquid crystal display devices, and their application areas are gradually expanding. Summary of the Invention

[0005] The problem to be solved by this disclosure is to provide a backlight unit, a display device including the same, and a method for manufacturing the same, wherein the backlight unit includes a color conversion substrate in which a wavelength conversion material is formed at a desired location by means of a partition structure.

[0006] The subject matter of this disclosure is not limited to the subject matter mentioned above, and those skilled in the art will clearly understand from the following description other technical subject matter not mentioned.

[0007] A backlight unit according to an embodiment of the present disclosure for solving the aforementioned problem includes: a first substrate; a plurality of LED chips arranged on one side of the first substrate and emitting light of a first color; a second substrate disposed opposite to the said side of the first substrate; and a plurality of light modulation patterns arranged on one side of the second substrate facing the said side of the first substrate to overlap with the plurality of LED chips respectively, each of the light modulation patterns including a plurality of first wavelength conversion patterns for converting light of the first color into light of a second color, the first wavelength conversion pattern including: a first wavelength conversion layer disposed on the said side of the second substrate; a first organic encapsulation layer disposed on the first wavelength conversion layer; and a partition structure covering the first wavelength conversion layer and the first organic encapsulation layer, the partition structure including: a first hole pattern exposing at least a portion of the first organic encapsulation layer.

[0008] Alternatively, each of the light modulation patterns may further include: a plurality of second wavelength conversion patterns that convert the first color light into a third color light and are separated from the first wavelength conversion pattern; the second wavelength conversion pattern includes: a second wavelength conversion layer disposed on one side of the second substrate; a second organic encapsulation layer disposed on the second wavelength conversion layer; and the partition structure covering the second wavelength conversion layer and the second organic encapsulation layer; the partition structure includes: a first hole pattern that exposes at least a portion of the second organic encapsulation layer.

[0009] Alternatively, the first wavelength conversion layer may include a first wavelength conversion particle, and the second wavelength conversion layer may include a second wavelength conversion particle, wherein the first wavelength conversion particle and the second wavelength conversion particle are quantum dots.

[0010] Alternatively, each of the light modulation patterns may further include: a light transmission pattern, spaced apart from the first wavelength conversion pattern and the second wavelength conversion pattern, the light transmission pattern including: a light transmission layer disposed on one side of the second substrate; a third organic encapsulation layer disposed on the light transmission layer; and a partition structure covering the light transmission layer and the third organic encapsulation layer, the partition structure including: a first aperture pattern exposing at least a portion of the third organic encapsulation layer, the light transmission layer including a base resin and scattering particles dispersed within the base resin.

[0011] Alternatively, at least one of the first wavelength conversion layer and the second wavelength conversion layer may further include the scattering particles.

[0012] Alternatively, each of the light modulation patterns may further include an air layer formed between the first wavelength conversion pattern and the second wavelength conversion pattern.

[0013] Alternatively, each of the light modulation patterns may further include a metal layer covering the partition structure, wherein the first hole pattern continuously penetrates the partition structure and the metal layer to expose at least a portion of the first organic encapsulation layer.

[0014] Alternatively, the partition structure and the metal layer may include a second aperture pattern that exposes at least a portion of one side of the second substrate, each of the light modulation patterns including a light transmission pattern disposed between the first wavelength conversion pattern and the second wavelength conversion pattern, the light transmission pattern including a base resin and scattering particles dispersed within the base resin, and the side of the second substrate exposed through the second aperture pattern overlapping at least a portion of the LED chip.

[0015] Each of the light modulation patterns may include: a light transmission pattern disposed between the first wavelength conversion pattern and the second wavelength conversion pattern, and disposed between the partition structure and the LED chip, wherein the light transmission pattern comprises a substrate resin and scattering particles dispersed within the substrate resin.

[0016] Alternatively, the partition structure may be composed of a first surface, a second surface, and a third surface connected as one unit, wherein the first surface contacts one surface of the second substrate, the second surface wraps around the side surface of the first wavelength conversion layer and the side surface of the first organic encapsulation layer, and the third surface includes the first hole pattern.

[0017] The partition structure may include silicon nitride (SiN). x ), silicon dioxide (SiO) x ) and silicon oxynitride (SiO) x N y At least one of them.

[0018] It is possible that the obtuse angle formed between one side of the second substrate and the second side of the partition structure is less than 120 degrees.

[0019] The first wavelength conversion layer may include: a first wavelength conversion particle that converts the light of the first color into red light; and a second wavelength conversion particle that converts the light of the first color into green light.

[0020] Alternatively, the first organic encapsulation layer may be in contact with at least a portion of the LED chip.

[0021] Alternatively, a gap overlapping the first hole pattern can be formed between the first organic encapsulation layer and the LED chip.

[0022] Alternatively, the backlight unit may further include at least one of a first protective layer and a second protective layer, wherein the first protective layer is disposed on the first substrate and covers the plurality of LED chips, and the second protective layer is disposed on the second substrate and covers the plurality of light modulation patterns.

[0023] A display device according to one embodiment for solving the aforementioned problem includes: a backlight unit; a display panel disposed on the backlight unit; and an optical film disposed between the backlight unit and the display panel. The backlight unit includes: a first substrate; a plurality of LED chips arranged on one side of the first substrate and emitting light of a first color; a second substrate disposed opposite to the side of the first substrate; and a plurality of light modulation patterns arranged on one side of the second substrate facing the side of the first substrate to overlap with the plurality of LED chips, each of the light modulation patterns including a first wavelength conversion pattern for converting light of the first color into light of a second color. The first wavelength conversion pattern includes: a first wavelength conversion layer disposed on the side of the second substrate; a first organic encapsulation layer disposed on the first wavelength conversion layer; and a partition structure covering the first wavelength conversion layer and the first organic encapsulation layer. The partition structure includes: a hole pattern exposing at least a portion of the first organic encapsulation layer.

[0024] The light modulation pattern may include: a plurality of second wavelength conversion patterns that convert the first color light into a third color light and are spaced apart from the first wavelength conversion pattern; the second wavelength conversion pattern includes: a second wavelength conversion layer disposed on one side of the second substrate; a second organic encapsulation layer disposed on the second wavelength conversion layer; and the partition structure covering the second wavelength conversion layer and the second organic encapsulation layer; the partition structure includes: the hole pattern that exposes at least a portion of the second organic encapsulation layer; the first wavelength conversion layer includes first wavelength conversion particles; the second wavelength conversion layer includes second wavelength conversion particles; and the first wavelength conversion particles and the second wavelength conversion particles are quantum dots.

[0025] A method for manufacturing a backlight unit according to an embodiment to solve the aforementioned problem includes: forming a first photoresist on one side of a first substrate and then patterning the first photoresist to form a first base pattern; forming an inorganic material layer covering the first substrate and the first base pattern; forming a second photoresist on the inorganic material layer and then patterning the second photoresist to form a second base pattern; forming a hole pattern in the inorganic material layer by using an etching process that employs the second base pattern as a mask; removing both the first base pattern and the second base pattern to form a partition structure; forming a light modulation layer through the hole pattern in the space formed between the first substrate and the partition structure; and forming an organic encapsulation layer through the hole pattern in the space formed between the light modulation layer and the partition structure.

[0026] It is possible that the first mask used to form the first base pattern includes a first light-transmitting area, and the second mask used to form the second base pattern includes a second light-transmitting area, wherein the first light-transmitting area and the second light-transmitting area do not overlap with each other, and the second light-transmitting area overlaps with at least a portion of the first base pattern.

[0027] The details of other embodiments are included in the detailed description and accompanying drawings.

[0028] Public effect

[0029] The backlight unit, display device including it, and manufacturing method thereof according to embodiments of the present disclosure can form wavelength conversion material at a desired location by means of a partition structure according to the required color characteristics. Furthermore, it can prevent unnecessary material consumption and save manufacturing costs.

[0030] According to embodiments of this disclosure, an organic layer is arranged between the LED chip and the wavelength conversion material, which can prevent the degradation of the wavelength conversion material caused by the heat generated by the LED chip, and can reduce the gap between the light source substrate and the color conversion substrate of the backlight unit to achieve overall thinning of the display device.

[0031] The effects of the embodiments are not limited to those illustrated above, and more diverse effects are included in this specification. Attached Figure Description

[0032] Figure 1 This is an exploded perspective view of a display device according to one embodiment.

[0033] Figure 2 This is a top view of a backlight unit according to an embodiment.

[0034] Figure 3a and Figure 3b yes Figure 2 A simplified top view of the light modulation pattern.

[0035] Figure 4a and Figure 4b It is along Figure 2 An example and other examples of a cross-sectional view taken from the A-A' line.

[0036] Figure 5a It is magnification Figure 4a Enlarged cross-sectional view of the Q region.

[0037] Figure 5b and Figure 5c It is shown in Figure 5a Examples of structural variations.

[0038] Figure 6 It is a diagram illustrating the path of light incident on the light modulation pattern.

[0039] Figures 7 to 10 This is an enlarged cross-sectional view of the backlight unit according to various embodiments. In particular, the light modulation pattern of the backlight unit has been enlarged.

[0040] Figures 11a to 11g This is a cross-sectional view showing a method for manufacturing a backlight unit according to one embodiment. Specifically, it is a cross-sectional view mainly showing the method for manufacturing the color conversion substrate in the backlight unit. Detailed Implementation

[0041] If referring to the attached appendix Figure 1 As will become clear from the detailed embodiments described below, the advantages and features of this disclosure, as well as the methods of implementing them, will become apparent. However, this disclosure is not limited to the embodiments disclosed below and will be implemented in various forms that differ from each other. These embodiments are provided only to make the disclosure complete and to fully inform those skilled in the art to which this disclosure pertains of the scope of the disclosure. This disclosure is defined only by the scope of the claims.

[0042] The term "on" to refer to elements or layers includes all cases where an element or layer is directly on another element or is in the middle of another element or layer.

[0043] Although terms like "first," "second," etc., are used to describe multiple constituent elements, these constituent elements are not limited by these terms. These terms are used only to distinguish one constituent element from others. Therefore, the first constituent element mentioned below can also be a second constituent element within the technical concept of this disclosure. Unless explicitly stated in the context, singular expressions include plural expressions.

[0044] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same or similar reference numerals are used for the same constituent elements in the drawings.

[0045] Figure 1 This is an exploded perspective view of a display device according to one embodiment. Figure 2 This is a top view of a backlight unit according to an embodiment. Figure 3a and Figure 3b yes Figure 2 A simplified top view of the light modulation pattern. Figure 4a and Figure 4b It is along Figure 2 An example and other examples of a cross-sectional view taken from the A-A' line.

[0046] Reference Figures 1 to 4b The display device 1000 includes a backlight unit 100 and a display panel 300 disposed above the backlight unit 100. The display device 1000 may also include an optical film 200 disposed between the backlight unit 100 and the display panel 300.

[0047] The backlight unit 100 can be arranged below the display panel 300 and the optical film 200. The backlight unit 100 can provide light WL to the optical film 200 side, and the optical film 200 can provide light to the display panel 300 side. That is, the display panel 300 can receive light from the backlight unit 100 and the optical film 200 to display an image.

[0048] The backlight unit 100 may include a light source substrate 10 and a color conversion substrate 30 disposed above the light source substrate 10.

[0049] The light source substrate 10 can be a substrate including multiple LED chips 15. Specifically, such as... Figure 4a As shown, the light source substrate 10 may include a first base substrate 11, electrodes 12a and 12b, an insulating film 13, and a plurality of LED chips 15.

[0050] The first base substrate 11 can provide space for various structures for arranging the light source substrate 10. The first base substrate 11 may generally have a polygonal prism shape and may include a top and bottom surface that are parallel to each other. As one embodiment, the first base substrate 11 may be a glass substrate. However, the material of the first base substrate 11 is not limited to this.

[0051] Electrodes 12a and 12b may include a first electrode 12a and a second electrode 12b, which may be disposed on the first base substrate 11. The first electrode 12a and the second electrode 12b may be electrically connected to an external circuit (not shown) to receive electrical signals, and respectively connected to the LED chip 15 to provide electrical signals to the LED chip 15. The first electrode 12a and the second electrode 12b may contain metallic materials, such as gold (Au), silver (Ag), or copper (Cu), or may contain transparent conductive materials such as ITO, IZO, or ITZO.

[0052] The insulating film 13 can be disposed on the first electrode 12a and the second electrode 12b. The insulating film 13 can be a single film composed of organic or inorganic materials, or it can be a multilayer film in which organic and inorganic films are alternately stacked.

[0053] The insulating film 13 can compensate for the step difference generated on the first base substrate 11 by the first electrode 12a and the second electrode 12b, thus enabling the LED chip 15 to be stably arranged. Additionally, the insulating film 13 may include a plurality of through holes. First connecting electrodes 14a and second connecting electrodes 14b can be formed in the through holes of the insulating film 13, connecting the first electrode 12a and the second electrode 12b to the LED chip 15.

[0054] Multiple LED chips 15 can be arranged on the insulating film 13. For example... Figure 2 As shown, the LED chips 15 can be arranged in rows and columns on a plane, forming a matrix. Furthermore, the spacing between each LED chip 15 can be fixed. That is, the LED chips 15 can be uniformly arranged on the light source substrate 10. The LED chips 15 can have a rectangular or square shape on the plane, but they can also have various other planar shapes such as polygons or circles.

[0055] As described above, each LED chip 15 can be electrically connected to the first electrode 12a and the second electrode 12b respectively, and can emit light or not emit light according to the signals provided from the first electrode 12a and the second electrode 12b.

[0056] The LED chips 15 on the light source substrate 10 can emit light of the same color (or wavelength) as each other. As one embodiment, the LED chip 15 can be a cyan LED chip that emits cyan light. As another embodiment, the LED chip 15 can also be a UV (Ultra Violet) LED chip that emits ultraviolet light. However, it is not limited to this, and each LED chip 15 can also emit light of different colors.

[0057] In some embodiments, such as Figure 4bAs shown, the light source substrate 10 may also include a first protective layer 17 disposed on the LED chip 15. The first protective layer 17 may include an organic insulating film made of organic matter or an inorganic insulating film made of inorganic matter. In addition, the first protective layer 17 may contain a material with high light transmittance.

[0058] The first protective layer 17 can completely cover the LED chip 15 disposed on the first base substrate 11, and can prevent the LED chip 15 from deteriorating due to oxygen or moisture that penetrates from the outside. In addition, the first protective layer 17 can planarize the entire top surface of the light source substrate 10, so that the light source substrate 10 can be stably bonded to the color conversion substrate 30 described later.

[0059] According to an embodiment, the light source substrate 10 may also include a reflective sheet (not shown). The reflective sheet can reflect light emitted from the LED chip 15 that is not directed upwards (e.g., third-direction D3), causing it to be directed upwards. That is, the light extraction efficiency of the light source substrate 10 can be improved. The reflective sheet can be attached to the top of the first base substrate 11 in a manner that does not overlap with the LED chip 15, but if the first base substrate 11 is transparent, it can also be attached entirely to the bottom of the first base substrate 11.

[0060] The color conversion substrate 30 can be disposed above the light source substrate 10. Specifically, the color conversion substrate 30 may include a second base substrate 31 and a light modulation pattern CP formed on one side of the second base substrate 31.

[0061] The second base substrate 31 can be arranged opposite to the first base substrate 11. In addition, the second base substrate 31 can provide space for arranging the optical modulation pattern CP.

[0062] The second base substrate 31 may have a generally polygonal prism shape, similar to the first base substrate 11, and may include a top and a bottom surface that are parallel to each other. As one embodiment, the second base substrate 31 may be a glass substrate, but it is not limited to any substrate with high light transmittance.

[0063] To convert the color of the light supplied from the LED chip 15, the color conversion substrate 30 may include multiple light modulation patterns CP. Each light modulation pattern CP may include multiple patterns. For example, the light modulation pattern CP may include wavelength conversion patterns and light transmission patterns, which will be described later.

[0064] The light modulation pattern CP can be formed on one side of the second base substrate 31, for example, as shown in the image. Figure 4aAs shown, the light modulation pattern CP can be formed on the underside of the second base substrate 31. That is, the light modulation pattern CP formed on the underside of the second base substrate 31 can face the LED chip 15 of the light source substrate 10. When the light modulation pattern CP and the LED chip 15 are arranged adjacent to each other and facing each other, the light incident efficiency from the LED chip 15 to the light modulation pattern CP can be increased.

[0065] The light modulation pattern CP can be formed in rows and columns on the underside of the second base substrate 31, arranged in a matrix, and can be separated from the LED chip 15 by the same interval.

[0066] The light modulation pattern CP of the color conversion substrate 30 can overlap at least partially with the LED chip 15. The area of ​​each light modulation pattern CP can be larger than the area of ​​each LED chip 15. That is, when the light modulation pattern CP and the LED chip 15 are arranged to overlap each other, the light modulation pattern CP can include the LED chip 15 on the plane.

[0067] Specifically, regarding the characteristics of the LED chip 15 emitted by the Lambertian body, when the area of ​​the region where the light modulation pattern CP is arranged is wider than the area of ​​the LED chip 15, the light emitted from the LED chip 15 towards the first direction D1 and the third direction D3 is also injected into the light modulation pattern CP and converted, thus increasing the light input efficiency from the LED chip 15 to the light modulation pattern CP.

[0068] like Figure 3a and Figure 3b As shown, each optical modulation pattern CP can be composed of multiple patterns. Figure 3a The diagram shows that each optical modulation pattern CP is arranged in a point-like manner on a plane, spaced apart at certain intervals along the first direction D1 and the second direction D2. Figure 3b The diagram shows various light modulation patterns CP arranged in a stripe pattern along a first direction D1 at certain intervals on a plane, extending along a second direction D2. The distances between the patterns of the light modulation patterns CP can be the same, but they can also be made different as needed. For example, the spacing between patterns located in the center of each light modulation pattern CP can be narrower to increase the arrangement density, while the spacing between patterns located in the outer contour outside the center can be wider to reduce the arrangement density.

[0069] According to embodiments of this disclosure, Figure 3a and Figure 3b The structures shown are all applied, but the following descriptions of the various optical modulation patterns CP are as follows: Figure 3a A dotted pattern as shown.

[0070] like Figure 4aAs shown, each pattern of the light modulation pattern CP can have an upper and lower surface that are parallel to each other in cross-section, and the upper surface can have an inverted trapezoid that is wider than the lower surface. That is, each light modulation pattern CP can have a shape that gradually narrows as it moves from the second base substrate 31 side to the first base substrate 11 side.

[0071] The light source substrate 10 and the color conversion substrate 30 can be combined to form a single structure. The LED chip 15 arranged on the uppermost side of the light source substrate 10 and the light modulation pattern CP arranged on the lower side of the color conversion substrate 30 can be in contact with each other. However, according to an embodiment, the LED chip 15 and the light modulation pattern CP may not be in contact with each other.

[0072] The color conversion substrate 30 can convert the color (or wavelength) of the light received from the light source substrate 10 and provide the converted light WL to the display panel 300. For example, the light provided to the color conversion substrate 30 by the light source substrate 10 can be cyan, and the light WL provided by the color conversion substrate 30 to the display panel 300 can be white. That is, the display panel 300 can receive white light WL from the backlight unit 100 and provide an image to the user using the provided white light WL.

[0073] On the other hand, the optical film 200 can be disposed between the backlight unit 100 and the display panel 300. The optical film 200 can be composed of multiple films. For example, the optical film 200 may include at least one of a prism film, a diffusion film, a microlens film, a convex lens film, a polarizing film, a reflective polarizing film, and a phase retardation film. An air layer can be formed between the films, but it is not limited thereto; they can also be combined to form a composite. The optical film 200 can be attached to one side of either the backlight unit 100 or the display panel 300, but it is not limited thereto; it can also be disposed separately from the backlight unit 100 and the display panel 300.

[0074] The display panel 300 can be disposed on the backlight unit 100 and the optical film 200. The display panel 300 may include: a first display substrate 310; a second display substrate 320 opposite to the first display substrate 310; and a liquid crystal layer (not shown) disposed between the first display substrate 310 and the second display substrate 320. The first display substrate 310 and the second display substrate 320 may overlap each other. Although not shown in the figures, any one display substrate may be larger than the other and protrude further outwards. A driver chip or external circuit display substrate can be mounted in this protruding area.

[0075] The following is for reference Figures 5a to 6 To explain more specifically the light modulation pattern CP of the color conversion substrate 30.

[0076] Figure 5a It is magnification Figure 4aEnlarged cross-sectional view of the Q region. Figure 5b and Figure 5c yes Figure 5a The diagram shows a modified example of the structure. Figure 6 It is a diagram illustrating the path of light incident on the light modulation pattern.

[0077] Reference Figures 5a to 6 The optical modulation pattern CP may include a first wavelength conversion pattern CP1, a second wavelength conversion pattern CP2, and a light transmission pattern CP3. In addition, each optical modulation pattern CP may be composed of a partition structure 33, an optical modulation layer 35, and an organic encapsulation layer 37.

[0078] The second base substrate 31 can be divided into a modulation region CA and an unmodulated region NCA. The modulation region CA can be a region where an optical modulation pattern CP is arranged. Specifically, the modulation region CA can include: a first modulation region CA1, where a first wavelength conversion pattern CP1 is arranged; a second modulation region CA2, where a second wavelength conversion pattern CP2 is arranged; and a third modulation region CA3, where a light transmission pattern CP3 is arranged. The unmodulated region NCA can be a region that does not include the optical modulation pattern CP. That is, the unmodulated region NCA can be the region between the first modulation region CA1, the second modulation region CA2, and the third modulation region CA3.

[0079] The partition structure 33 can be a structure covering the light modulation layer 35 and the organic encapsulation layer 37, which will be described later. Through the partition structure 33, the first wavelength conversion pattern CP1, the second wavelength conversion pattern CP2, and the light transmission pattern CP3 of the light modulation pattern CP can be separated and divided from each other.

[0080] The partition structure 33 can be integrally disposed on the underside of the second base substrate 31. Specifically, the partition structure 33 can be disposed with a uniform thickness along the underside of the second base substrate 31, the side surface of the light modulation layer 35, and the side surface of the organic encapsulation layer 37. As one embodiment, the thickness of the partition structure 33 can be less than 1 μm, but is not limited thereto.

[0081] The partition structure 33 can be an inorganic membrane containing inorganic material. For example, the partition structure 33 can be made of silicon nitride (SiN). x ), silicon dioxide (SiO) x ) and silicon oxynitride (SiO) x N y Any of the following configurations. As one embodiment, the partition structure 33 may include silicon nitride (SiN) x Inorganic membranes.

[0082] The partition structure 33 may be composed of a first surface 33a (or, a first portion), a second surface 33b (or, a second portion), and a third surface 33c (or, a third portion). The first surface 33a, the second surface 33b, and the third surface 33c may be connected to each other as a single unit. Alternatively, the first surface 33a of the partition structure 33 may be formed in the non-modulation region NCA of the second base substrate 31, and the second surface 33b and the third surface 33c may be formed in the modulation region CA.

[0083] The first surface 33a of the partition structure 33 may be the surface that contacts the bottom surface of the second base substrate 31.

[0084] The second surface 33b is a side surface of the partition structure 33, which can be a surface that surrounds the side surface of the light modulation layer 35 and the organic encapsulation layer 37. The shapes of the light modulation layer 35 and the organic encapsulation layer 37 formed in the internal space of the partition structure 33 can be determined according to the shape of the partition structure 33.

[0085] The second surface 33b can form an angle θ with the first surface 33a. As one embodiment, the obtuse angle θ formed by the first surface 33a and the second surface 33b can be greater than 90 degrees and less than 120 degrees. However, it is not limited to this; depending on the formation process of the partition structure 33, the angle θ formed by the first surface 33a and the second surface 33b can also be greater than 120 degrees.

[0086] The third surface 33c may be a surface that supports at least a portion of the organic encapsulation layer 37. The third surface 33c disposed in each modulation region CA may include a hole pattern HP. In order to form the optical modulation layer 35 and the organic encapsulation layer 37, the hole pattern HP may be holes in which a material is injected into the interior of the partition structure 33.

[0087] The optical modulation layer 35 may include a first wavelength conversion layer 35R, a second wavelength conversion layer 35G, and a light-transmitting layer 35B. The first wavelength conversion pattern CP1 may include the first wavelength conversion layer 35R located in the first modulation region CA1. The second wavelength conversion pattern CP2 may include the second wavelength conversion layer 35G located in the second modulation region CA2. The light-transmitting pattern CP3 may include the light-transmitting layer 35B located in the third modulation region CA3.

[0088] Each optical modulation layer 35 can be formed within the space surrounded by the second surface 33b of the partition structure 33. As described above, the shape of the optical modulation layer 35 can be determined according to the shape of the partition structure 33.

[0089] The first wavelength conversion layer 35R, the second wavelength conversion layer 35G, and the light-transmitting layer 35B may each include a substrate resin BR and various particles dispersed within the substrate resin BR. Specifically, the first wavelength conversion layer 35R may include first wavelength conversion particles WC1 dispersed within the substrate resin BR, the second wavelength conversion layer 35G may include second wavelength conversion particles WC2 dispersed within the substrate resin BR, and the light-transmitting layer 35B may include scattering particles SCT dispersed within the substrate resin BR. Additionally, the first wavelength conversion layer 35R and the second wavelength conversion layer 35G may also include scattering particles SCT dispersed within the substrate resin BR.

[0090] The substrate resin BR is not particularly limited as long as it is a material with high light transmittance and excellent dispersion characteristics for the first wavelength conversion particles WC1, the second wavelength conversion particles WC2, and the scattering particles SCT. For example, the substrate resin BR can include organic materials such as epoxy resin, acrylic resin, calomel resin, or imide resin.

[0091] The first wavelength conversion particles WC1 of the first wavelength conversion layer 35R and the second wavelength conversion particles WC2 of the second wavelength conversion layer 35G can convert the peak wavelength of the incident light into other specific peak wavelengths. That is, the first wavelength conversion particles WC1 and the second wavelength conversion particles WC2 can convert the color of the incident light.

[0092] For example, the first wavelength conversion particle WC1 can convert the cyan light provided by the LED chip 15 into red light and emit it, and the second wavelength conversion particle WC2 can convert the cyan light provided by the LED chip 15 into green light and emit it. That is, the first modulation region CA1, which is arranged with the first wavelength conversion pattern CP1, can be the region that emits red light, and the second modulation region CA2, which is arranged with the second wavelength conversion pattern CP2, can be the region that emits green light.

[0093] Examples of first-wavelength-converting particles (WC1) and second-wavelength-converting particles (WC2) include quantum dots, quantum rods, and phosphors. Quantum dots can be particle-like materials that emit light of a specific wavelength as electrons transition from the conduction band to the valence band.

[0094] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can absorb light and emit light with a specific wavelength, depending on their composition and size, and thus possess a specific band gap. Examples of semiconductor nanocrystals that represent quantum dots include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0095] For example, group IV nanocrystals can be exemplified by bi-element compounds such as silicon (Si), germanium (Ge), or silicon carbide (SiC), silicon-germanium (SiGe), etc., but this disclosure is not limited thereto.

[0096] Furthermore, examples of II-VI group compound nanocrystals include bi-element compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof, as well as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, and CdSeTe. The present disclosure includes tri-element compounds such as dHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, or tetra-element compounds such as HgZnTes, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof, but is not limited thereto.

[0097] Furthermore, III-V group compound nanocrystals can be exemplified as two-element compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; three-element compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; or four-element compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof, but this disclosure is not limited thereto.

[0098] Group IV-VI nanocrystals can be exemplified as two-element compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof, three-element compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof, or four-element compounds such as SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof, but this disclosure is not limited thereto.

[0099] The shape of quantum dots is a commonly used shape in this field and is not particularly limited, but examples include spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, and nanoplate particles. The aforementioned two-element, three-element, or four-element compounds can exist in the particles at a uniform concentration, or they can exist separately in the same particles with different concentration distributions.

[0100] Quantum dots can have a core-shell structure, comprising a core including the aforementioned nanocrystals and a shell surrounding the core. The interface between the core and the shell can have a concentration gradient where the concentration of elements present in the shell decreases towards the center. The shell of the quantum dot can function as a protective layer to prevent chemical denaturation of the core and maintain semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. Examples of shells for quantum dots include oxides of metals or non-metals, semiconductor compounds, or combinations thereof.

[0101] For example, the oxides of metals or nonmetals may be two-element compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc., or three-element compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc., but this disclosure is not limited thereto.

[0102] In addition, examples of semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, AlSb, etc., but this disclosure is not limited thereto.

[0103] The light emitted by the aforementioned quantum dots can have a full width at half maximum (FWHM) of a wavelength spectrum below approximately 45 nm, which can improve the color purity and color reproduction of the displayed colors. Furthermore, the light emitted by quantum dots can be emitted in multiple directions regardless of the incident direction of the incident light. This improves the side-view visibility of the display device.

[0104] The first wavelength-converting particle WC1 and the second wavelength-converting particle WC2 can both be composed entirely of quantum dots. In this case, the diameter of the quantum dots constituting the first wavelength-converting particle WC1 can be larger than the diameter of the quantum dots constituting the second wavelength-converting particle WC2. For example, the diameter of the quantum dots constituting the first wavelength-converting particle WC1 could be approximately... to The diameter of the quantum dots constituting the second wavelength-converting particle WC2 is approximately to However, it is not limited to this.

[0105] The light-transmitting layer 35B may include scattering particles (SCTs). Additionally, as described above, the first wavelength conversion layer 35R and the second wavelength conversion layer 35G may also include scattering particles (SCTs).

[0106] The scattering particles (SCTs) can have a different refractive index than the substrate resin (BR) and form an optical interface with the substrate resin (BR). The scattering particles (SCTs) are not particularly limited as long as they are materials capable of scattering at least a portion of the transmitted light, but can be, for example, metal oxide particles such as titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2).

[0107] Scattering particles (SCTs) can scatter light in random directions regardless of the incident direction of the light without substantially changing the wavelength of the light transmitted through the light-transmitting layer 35B. This improves the side visual recognition of the display device.

[0108] The organic encapsulation layer 37 can be disposed on one side of the light modulation layer 35. For example, the organic encapsulation layer 37 can be disposed below the light modulation layer 35. Specifically, the organic encapsulation layer 37 may include: a first organic encapsulation layer 37r disposed between the first wavelength conversion layer 35R and the LED chip 15; a second organic encapsulation layer 37g disposed between the second wavelength conversion layer 35G and the LED chip 15; and a third organic encapsulation layer 37b disposed between the light transmission layer 35B and the LED chip 15. The first organic encapsulation layer 37r, the second organic encapsulation layer 37g, and the third organic encapsulation layer 37b can be formed simultaneously using the same process, but are not limited thereto.

[0109] The organic encapsulation layer 37 can block the heat generated in the LED chip 15 from being transferred to the light modulation layer 35. That is, the organic encapsulation layer 37 can prevent the wavelength conversion particles WC1 and WC2 inside the light modulation layer 35 from being degraded due to the heat generated in the LED chip 15. Therefore, the organic encapsulation layer 37 contains organic materials, and it is not limited to any material with low thermal conductivity.

[0110] The organic encapsulation layer 37 can fill the space formed by the partition structure 33. That is, the space surrounded by the second surface 33b of the partition structure 33 can be filled by the light modulation layer 35 and the organic encapsulation layer 37.

[0111] The organic encapsulation layer 37 can also fill the hole pattern HP of the partition structure 33. In this case, at least a portion of the organic encapsulation layer 37 can also contact the LED chip 15.

[0112] Unlike this, such as Figure 5b As shown, the organic encapsulation layer 37 may not completely fill the hole pattern HP of the partition structure 33. That is, the organic encapsulation layer 37 may not be in contact with the LED chip 15. Voids VD can be formed in the hole pattern HP that are not filled by the organic encapsulation layer 37. Voids VD can be formed between the organic encapsulation layer 37 and the LED chip 15.

[0113] According to the embodiments, such as Figure 5c As shown, the light modulation pattern CP may also include a second protective layer 38 disposed below the partition structure 33. The second protective layer 38 may be integrally disposed on the second base substrate 31 and may cover the partition structure 33. The second protective layer 38 may include an inorganic film composed of inorganic materials and may contain materials with high light transmittance. For example, the second protective layer 38 may contain silicon nitride (SiN). x ), silicon dioxide (SiO) x ) and silicon oxynitride (SiO) x N y Any one of them.

[0114] The second protective layer 38 can effectively block oxygen or moisture from penetrating into the light modulation layer 35 through the hole pattern HP of the partition structure 33, preventing the wavelength conversion particles WC1 and WC2 inside the light modulation layer 35 from deteriorating.

[0115] An air layer 39 can be formed between each pattern CP1, CP2, and CP3. Light inside each pattern CP1, CP2, and CP3 facing the air layer 39 can be totally reflected by the air layer 39 and directed upwards.

[0116] For example, such as Figure 6As shown, cyan light L incident on the first wavelength conversion pattern CP1 can be converted into red light L01 and L02 by the first wavelength conversion particle WC1, and emitted in different directions. The light emitted by the first wavelength conversion particle WC1 in random directions may include a first emitted light L01 facing upward and a second emitted light L02 facing side. The first emitted light L01 can be emitted directly upward (e.g., third direction D3) towards the display panel 300 (see reference). Figure 1 The light source L02 can travel to the side (e.g., in the first direction D1) and towards the air layer 39.

[0117] The refractive index of the air layer 39 can be 1 or a value approximately thereto, while the refractive indices of the substrate resin BR and the partition structure 33 can be greater than this. That is, the air layer 39 and the partition structure 33 can form an optical interface by having different refractive indices. The second emitted light L02 facing the air layer 39 can be totally internally reflected at the boundary between the air layer 39 and the partition structure 33, and the reflected second emitted light L02' can travel upwards. Therefore, the air layer 30 formed between each pattern CP1, CP2, CP3 can improve the light extraction efficiency of the backlight unit.

[0118] As described above, each LED chip 15 can provide cyan light to each light modulation pattern CP arranged on the color conversion substrate 30. Cyan light incident on the first wavelength conversion pattern CP1 of the light modulation pattern CP can be converted into red light and emitted outwards, cyan light incident on the second wavelength conversion pattern CP2 can be converted into green light and emitted outwards, and cyan light incident on the light transmission pattern CP3 can be scattered outwards by the internal scattering particles SCT. That is, the light emitted through the color conversion substrate 30 can be white light WL that includes all red, green, and cyan light (see reference). Figure 1 ).

[0119] Figures 7 to 10 This is an enlarged cross-sectional view of a backlight unit according to various embodiments. Hereinafter, other embodiments of the backlight unit will be described. In the following embodiments, configurations identical to those described previously will be referred to using the same reference numerals, and descriptions will be omitted or simplified, focusing primarily on the differences.

[0120] Figure 7 Implementation examples and Figure 5a The difference in the embodiment is that a metal layer 34_1 is also arranged on the partition structure 33.

[0121] Reference Figure 5a and Figure 7 The light modulation pattern CP_1 may also include a metal layer 34_1 disposed on the partition structure 33.

[0122] The metal layer 34_1 can be disposed in the same area as the partition structure 33. That is, the metal layer 34_1 can be disposed integrally in the modulation region CA and the non-modulation region NCA. In addition, the hole pattern HP_1 formed in the partition structure 33 can also be continuously formed on the metal layer 34_1. Light emitted from the LED chip 15 can travel through the hole pattern HP_1 into the interior of each light modulation pattern CP_1.

[0123] Light incident on the interior of the light modulation pattern CP_1 can be emitted in random directions by the first wavelength conversion particle WC1 and the second wavelength conversion particle WC2, or reflected in random directions by the scattering particle SCT. The metal layer 34_1 arranged to enclose each light modulation pattern CP_1 can reflect light that does not travel upwards from the light traveling in random directions, and the reflected light can travel upwards. That is, the metal layer 34_1 can improve the light extraction efficiency of the backlight unit.

[0124] Figure 8 Implementation examples and Figure 5a The difference in the embodiment is that a light-transmitting layer 35B_2 is arranged instead of an air layer 39.

[0125] Reference Figure 5a and Figure 8 The light transmission pattern CP3_2 of the light modulation pattern CP_2 can be arranged between the first wavelength conversion pattern CP1 and the second wavelength conversion pattern CP2. The light transmission pattern CP3_2 may include a portion of the light transmission layer 35B_2 and the partition structure 33.

[0126] Light passing through pattern CP3_2 can be related to Figure 5a The light illustrated in the diagram passes through a scattering layer that scatters the incident light in the same way as pattern CP3. Light supplied from LED chip 15 can be scattered outwards by pattern CP3_2.

[0127] The light-transmitting pattern CP3_2 may include a light-transmitting layer 35B_2, which includes a second substrate resin BR2 and scattering particles SCT dispersed within the second substrate resin BR2. As an embodiment, the second substrate resin BR2 may be composed of the same material as the first substrate resin BR1 of the first wavelength conversion layer 35R and the second wavelength conversion layer 35G.

[0128] In another embodiment, the second substrate resin BR2 may contain a material having a refractive index lower than that of the first substrate resin BR1. When the refractive index of the second substrate resin BR2 is lower than that of the first substrate resin BR1, light emitted from the first wavelength conversion pattern CP1 can be totally internally reflected at the boundary between the first wavelength conversion pattern CP1 and the light transmission pattern CP3_2 and travel upwards (e.g., in the third direction D3). That is, the light extraction efficiency of the backlight unit can be improved.

[0129] The light-transmitting layer 35B_2 can be disposed between the partition structure 33 and the LED chip 15. In other words, the first wavelength conversion layer 35R and the second wavelength conversion layer 35G can be disposed in the internal space formed by the partition structure 33 and the second base substrate 31, and the light-transmitting layer 35B_2 can be disposed in the external space formed between the partition structure 33 and the LED chip 15. The light-transmitting layer 35B_2 can fill the space formed between the partition structure 33 and the LED chip 15. The light-transmitting layer 35B_2 can be in contact with at least a portion of the LED chip 15; however, according to an embodiment, when an additional protective layer is formed on the LED chip 15, it may not be in contact with the LED chip 15.

[0130] According to Figure 8 In the structure of the embodiment, and according to Figure 5a The structure differs from that of the embodiments, and the patterns CP1, CP2, and CP3 of the light modulation pattern CP_2 can be arranged with a higher density. That is, the color conversion efficiency of light supplied from the LED chip 15 through the light modulation pattern CP_2 can be improved. In addition, the light modulation pattern CP_2 may not include areas where incident light passes directly through, but scatters the incident light in all areas, thus improving the side visual recognition of the display device.

[0131] on the other hand, Figure 9 Implementation examples and Figure 8 The embodiments differ from those in that a metal layer 34_3 is also arranged on the partition structure 33.

[0132] Combination Figure 8 Refer to Figure 9 The light modulation pattern CP_3 may also include a metal layer 34_3 surrounding the outside of the partition structure 33.

[0133] The metal layer 34_3 can be arranged to cover the first wavelength conversion layer 35R and the second wavelength conversion layer 35G, and reflect the light emitted from the first wavelength conversion layer 35R and the second wavelength conversion layer 35G in a random direction upward.

[0134] Metal layer 34_3 can be arranged in the first modulation region CA1 and the second modulation region CA2 to cover the first wavelength conversion layer 35R and the second wavelength conversion layer 35G, but it can be omitted from the third modulation region CA3.

[0135] The first wavelength conversion pattern CP1_3 and the second wavelength conversion pattern CP2_3 may include a first aperture pattern HP1. The first aperture pattern HP1 may continuously penetrate the partition structure 33 and the metal layer 34_3. Light emitted from the LED chip 15 can pass through the first aperture pattern HP1 and be incident into the interior of the first wavelength conversion layer 35R and the second wavelength conversion layer 35G.

[0136] The light-transmitting pattern CP3_3 may include a second aperture pattern HP2. The second aperture pattern HP2 may continuously penetrate the partition structure 33 and the metal layer 34_3 of the third modulation region CA3. That is, the second aperture pattern HP2 may expose at least a portion of the lower surface of the second base substrate 31, and at least a portion of the light-transmitting pattern CP3_3 may contact the exposed lower surface of the second base substrate 31. Light incident on the light-transmitting pattern CP3_3 can be emitted to the outside through the second aperture pattern HP2.

[0137] According to Figure 9 In the structure of the embodiments, not only as Figure 8 In the embodiment, the patterns CP1_3, CP2_3, and CP3_3 are arranged in a dense manner, and a metal layer 34_3 is arranged to enclose the first wavelength conversion layer 35R and the second wavelength conversion layer 35G, which can improve the light extraction efficiency of the backlight unit.

[0138] Figure 10 Implementation examples and Figure 5a The difference in the embodiment is that a third wavelength conversion layer 35RG_4 is arranged instead of the first wavelength conversion layer 35R and the second wavelength conversion layer 35G.

[0139] Reference Figure 5a and Figure 10 The second substrate 31 can be divided into a modulation region CA and an unmodulated region NCA, and the modulation region CA includes a third modulation region CA3 and a fourth modulation region CA4. In addition, the optical modulation pattern CP_4 can include a light transmission pattern CP3 arranged in the third modulation region CA3 and a third wavelength conversion pattern CP4_4 arranged in the fourth modulation region CA4.

[0140] The third wavelength conversion layer 35RG_4 of the third wavelength conversion pattern CP4_4 can encompass all the first wavelength conversion particles WC1 and the second wavelength conversion particles WC2. That is, the cyan light provided from the LED chip 15 to the third wavelength conversion layer 35RG_4 can be converted into red and green light by the first wavelength conversion particles WC1 and the second wavelength conversion particles WC2, respectively. In other words, in the fourth modulation region CA4 where the third wavelength conversion pattern CP4_4 is arranged, all red and green light can be emitted outwards. Therefore, the light emitted from the fourth modulation region CA4 can be yellow light. According to an embodiment, in the fourth modulation region CA4, cyan light that is not converted by the first wavelength conversion particles WC1 and the second wavelength conversion particles WC2 and passes directly through can also be emitted outwards. That is, in the fourth modulation region CA4, all red, green, and cyan light can be emitted.

[0141] Figures 11a to 11g These are cross-sectional views showing a method for manufacturing a backlight unit according to one embodiment. In particular, the cross-sectional views mainly show the method for manufacturing a color conversion substrate in the backlight unit.

[0142] Reference Figure 11a and Figure 11b After forming the first photoresist PR1a on the second base substrate 31, the first photoresist PR1a can be patterned by the first mask process to form the first base pattern PR1b.

[0143] The first photoresist PR1a can be a photosensitive organic film, which can be integrally formed on the second substrate 31.

[0144] The first masking process can be performed using a first mask M1. The first mask M1 may include a first light-transmitting region M1a and a first light-blocking region M1b, through which L_EX can be exposed to the first photoresist PR1a. For example, the first mask M1 may be a halftone mask or a slot mask with gradually changing light transmittance of the first light-transmitting region M1a.

[0145] The first photoresist PR1a in the exposed L_EX area can be removed by the developer, while the first photoresist PR1a remains in the unexposed area and can form the first base pattern PR1b.

[0146] Subsequently, an inorganic material layer 33' can be formed on the first base pattern PR1b. The inorganic material layer 33' can be integrally formed on the second base substrate 31 to cover the first base pattern PR1b. The inorganic material layer 33' may contain silicon nitride (SiN). x ), silicon dioxide (SiO) x ) and silicon oxynitride (SiO) x Ny Any one of the following, but not limited to:

[0147] Reference Figure 11c and Figure 11d After forming a second photoresist PR2a on a second base substrate 31 having a first base pattern PR1b and an inorganic material layer 33', a second mask process can be performed to form the second base pattern PR2b.

[0148] The second photoresist PR2a can be a photosensitive organic film, which can be integrally formed on the inorganic material layer 33'.

[0149] The second masking process can be performed using the second mask M2. The second mask M2 may include a second light-transmitting area M2a and a second light-shielding area M2b. The L_EX photoresist irradiates the second photoresist PR2a through the second light-transmitting area M2a. For example, the second light-transmitting area M2a may overlap with each of the first base patterns PR1b, but not with the aforementioned first light-transmitting area M1a.

[0150] The second photoresist PR2a in the exposed L_EX area can be removed by the developer, while the second photoresist PR2a remains in the unexposed area, enabling the formation of the second base pattern PR2b. The exposed L_EX area can be the area where the hole pattern HP described later is formed.

[0151] Subsequently, a hole pattern HP can be formed in the inorganic material layer 33' by an etching process, thereby forming the partition structure 33. At this time, the etching process can be a dry etching process.

[0152] Reference Figure 4a and Figures 11e to 11g After removing the first base pattern PR1b and the second base pattern PR2b to form a second base substrate 31 with only the partition structure 33 remaining, the light modulation layer 35R, 35G, 35B and the organic encapsulation layer 37 are formed in sequence.

[0153] The first base pattern PR1b and the second base pattern PR2b can be removed by the same process, but if the first base pattern PR1b and the second base pattern PR2b are made of different materials, they can be removed by different processes.

[0154] After removing the first base pattern PR1b and the second base pattern PR2b, an optical modulation layer 35R, 35G, 35B and an organic encapsulation layer 37 can be sequentially formed in the space between the partition structure 33 and the second base substrate 31.

[0155] The solution-state light modulation layers 35R, 35G, and 35B can be ejected by inkjet printing using the first distributors DISP1r, DISP1g, and DISP1b. The light modulation layers 35R, 35G, and 35B can be injected into the space between the partition structure 33 and the second base substrate 31 through the hole pattern HP formed on the partition structure 33.

[0156] Various particles (e.g., wavelength conversion particles and scattering particles) can be dispersed inside the solution ejected by the first distributors DISP1r, DISP1g, and DISP1b.

[0157] The shapes of the optical modulation layers 35R, 35G, and 35B can be determined by the partition structure 33. In cross-section, the optical modulation layers 35R, 35G, and 35B can have a certain conical shape, just like the partition structure 33.

[0158] The organic encapsulation layer 37 can also be ejected via inkjet printing using the second distributor DISP2. The organic encapsulation layer 37 can be inserted into the space between the partition structure 33 and the light modulation layers 35R, 35G, and 35B through the aperture pattern HP. The organic encapsulation layer 37 can completely fill the remaining space after filling the light modulation layers 35R, 35G, and 35B. For example, the organic encapsulation layer 37 can fill up to the aperture pattern HP, so that the top surface of the organic encapsulation layer 37 is aligned with the top surface of the partition structure 33.

[0159] After that, as Figure 4a As shown, the color conversion substrate 30 manufactured through the process can be combined with the light source substrate 10 to form a backlight unit 100. At this time, the light modulation pattern CP of the color conversion substrate 30 can be attached to face the LED chip 15 of the light source substrate 10.

[0160] The aforementioned light modulation pattern CP can be patterned on the second base substrate 31 using the partition structure 33. In this case, a solution containing the first wavelength conversion particles WC1 and the second wavelength conversion particles WC2 can be arranged in the desired shape in the desired area, thus easily adjusting the light characteristics of the backlight unit and reducing unnecessary material waste. That is, the optical efficiency of the display device can be improved, and manufacturing costs can be saved.

[0161] In addition, the height of each light modulation pattern CP can be adjusted to a certain level, thereby improving the flatness of the color conversion substrate 30 and the bonding force with the light source substrate 10.

[0162] The embodiments of this disclosure have been described above with reference to the accompanying drawings. However, those skilled in the art to which this disclosure pertains will understand that it can be implemented in other specific forms without altering the technical concept or essential features of this disclosure. Therefore, the embodiments described above should be understood as illustrative rather than limiting in all respects.

Claims

1. A backlight unit, wherein, include: First substrate; Multiple LED chips are arranged on one side of the first substrate and emit light of a first color; The second substrate is arranged opposite to one side of the first substrate; as well as Multiple light modulation patterns are arranged on one side of the second substrate, which faces the first substrate, to overlap with the multiple LED chips. Each of the light modulation patterns includes a plurality of first wavelength conversion patterns that convert light of the first color into light of the second color. The first wavelength conversion pattern includes: a first wavelength conversion layer disposed on one side of the second substrate; a first organic encapsulation layer disposed on the first wavelength conversion layer; and a partition structure covering the first wavelength conversion layer and the first organic encapsulation layer. The partition structure includes a first hole pattern that exposes at least a portion of the first organic encapsulation layer.

2. The backlight unit according to claim 1, wherein, Each of the light modulation patterns further includes: a plurality of second wavelength conversion patterns that convert the first color light into third color light and are spaced apart from the first wavelength conversion patterns. The second wavelength conversion pattern includes: a second wavelength conversion layer disposed on one side of the second substrate; a second organic encapsulation layer disposed on the second wavelength conversion layer; and the spacer structure covering the second wavelength conversion layer and the second organic encapsulation layer. The partition structure includes: the first hole pattern, exposing at least a portion of the second organic encapsulation layer.

3. The backlight unit according to claim 2, wherein, The first wavelength conversion layer includes a first wavelength conversion particle, and the second wavelength conversion layer includes a second wavelength conversion particle. The first wavelength conversion particle and the second wavelength conversion particle are quantum dots.

4. The backlight unit according to claim 2, wherein, Each of the light modulation patterns further includes: a light transmission pattern, separated from the first wavelength conversion pattern and the second wavelength conversion pattern. The light-transmitting pattern includes: a light-transmitting layer disposed on one side of the second substrate; a third organic encapsulation layer disposed on the light-transmitting layer; and a partition structure covering the light-transmitting layer and the third organic encapsulation layer. The partition structure includes: the first hole pattern, exposing at least a portion of the third organic encapsulation layer. The light-transmitting layer includes a base resin and scattering particles dispersed within the base resin.

5. The backlight unit according to claim 4, wherein, At least one of the first wavelength conversion layer and the second wavelength conversion layer further includes the scattering particles.

6. The backlight unit according to claim 2, wherein, Each of the optical modulation patterns further includes an air layer formed between the first wavelength conversion pattern and the second wavelength conversion pattern.

7. The backlight unit according to claim 2, wherein, Each of the light modulation patterns also includes a metal layer covering the partition structure, the first aperture pattern continuously penetrating the partition structure and the metal layer to expose at least a portion of the first organic encapsulation layer.

8. The backlight unit according to claim 7, wherein, The partition structure and the metal layer include a second aperture pattern that exposes at least a portion of one side of the second substrate. Each of the light modulation patterns includes a light transmission pattern disposed between the first wavelength conversion pattern and the second wavelength conversion pattern. The light transmission pattern includes a base resin and scattering particles dispersed within the base resin. The side of the second substrate exposed through the second aperture pattern overlaps at least a portion of the LED chip.

9. The backlight unit according to claim 2, wherein, Each of the light modulation patterns includes: a light transmission pattern disposed between the first wavelength conversion pattern and the second wavelength conversion pattern, and disposed between the partition structure and the LED chip, wherein the light transmission pattern includes a substrate resin and scattering particles dispersed within the substrate resin.

10. The backlight unit according to claim 1, wherein, The partition structure is composed of a first surface, a second surface, and a third surface connected as one piece. The first surface is in contact with one side of the second substrate. The second surface covers the side of the first wavelength conversion layer and the side of the first organic encapsulation layer. The third surface includes the first hole pattern.

11. The backlight unit according to claim 10, wherein, The partition structure includes at least one of silicon nitride, silicon oxide, and silicon oxynitride.

12. The backlight unit according to claim 11, wherein, The obtuse angle formed between one side of the second substrate and the second side of the partition structure is less than 120 degrees.

13. The backlight unit according to claim 1, wherein, The first wavelength conversion layer includes: a first wavelength conversion particle that converts the light of the first color into red light; and a second wavelength conversion particle that converts the light of the first color into green light.

14. The backlight unit according to claim 1, wherein, The first organic encapsulation layer is in contact with at least a portion of the LED chip.

15. The backlight unit according to claim 1, wherein, A gap is formed between the first organic encapsulation layer and the LED chip, which overlaps with the first hole pattern.

16. The backlight unit according to claim 1, wherein, The backlight unit further includes at least one of a first protective layer and a second protective layer, wherein the first protective layer is disposed on the first substrate and covers the plurality of LED chips, and the second protective layer is disposed on the second substrate and covers the plurality of light modulation patterns.

17. A display device, wherein, include: Backlight unit; A display panel is arranged on the backlight unit; as well as An optical film is disposed between the backlight unit and the display panel. The backlight unit includes: First substrate; Multiple LED chips are arranged on one side of the first substrate and emit light of a first color; A second substrate is arranged opposite to one side of the first substrate; and Multiple light modulation patterns are arranged on one side of the second substrate, which faces the first substrate, to overlap with the multiple LED chips. Each of the light modulation patterns includes a first wavelength conversion pattern that converts light of the first color into light of the second color. The first wavelength conversion pattern includes: a first wavelength conversion layer disposed on one side of the second substrate; a first organic encapsulation layer disposed on the first wavelength conversion layer; and a partition structure covering the first wavelength conversion layer and the first organic encapsulation layer. The partition structure includes a hole pattern that exposes at least a portion of the first organic encapsulation layer.

18. The display device according to claim 17, wherein, Each of the light modulation patterns includes: a plurality of second wavelength conversion patterns that convert the first color light into a third color light, and are spaced apart from the first wavelength conversion patterns. The second wavelength conversion pattern includes: a second wavelength conversion layer disposed on one side of the second substrate; a second organic encapsulation layer disposed on the second wavelength conversion layer; and the spacer structure covering the second wavelength conversion layer and the second organic encapsulation layer. The partition structure includes the hole pattern that exposes at least a portion of the second organic encapsulation layer. The first wavelength conversion layer includes a first wavelength conversion particle, and the second wavelength conversion layer includes a second wavelength conversion particle. The first wavelength conversion particle and the second wavelength conversion particle are quantum dots.

19. A method for manufacturing a backlight unit, wherein, include: The step of forming a first photoresist on one side of a first substrate and then patterning the first photoresist to form a first base pattern; The step of forming an inorganic material layer covering the first substrate and the first base pattern; The step of forming a second photoresist on the inorganic material layer and then patterning the second photoresist to form a second base pattern; The step of forming a hole pattern in the inorganic material layer by using an etching process that uses the second base pattern as a mask; The step of removing both the first base pattern and the second base pattern to form the partition structure; The step of forming a light modulation layer through the hole pattern in the space formed between the first substrate and the partition structure; as well as The step of forming an organic encapsulation layer through the hole pattern in the space formed between the light modulation layer and the partition structure. The first substrate is combined with a light source substrate on which LED chips are disposed, such that the light modulation layer that performs wavelength conversion on the light emitted by the LED chips faces the LED chips of the light source substrate.

20. The method for manufacturing a backlight unit according to claim 19, wherein, The first mask used to form the first base pattern includes a first light-transmitting area, and the second mask used to form the second base pattern includes a second light-transmitting area. The first light-transmitting area and the second light-transmitting area do not overlap with each other, and the second light-transmitting area overlaps with at least a portion of the first base pattern.

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