Etching device and etching method

CN112185846BActive Publication Date: 2025-01-10TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202010589202.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-07-04
Filing Date
2020-06-24
Publication Date
2025-01-10
Estimated Expiration
2040-06-24

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Abstract

The present invention provides an etching device and an etching method, which precisely control the removal range of the unnecessary film when removing the unnecessary film on the peripheral portion of the substrate by etching. The etching device comprises: a substrate holding portion, which holds the substrate; a rotation drive portion, which rotates the substrate holding portion around a rotation axis; a liquid ejection portion, which ejects an etching liquid toward the peripheral portion of the substrate held by the substrate holding portion; and a control portion, which is configured to control the operation of the etching device by at least controlling the rotation drive portion and the liquid ejection portion. The control portion is configured to control at least one of the rotation speed of the substrate rotated by the rotation drive portion, the ejection speed of the etching liquid ejected from the liquid ejection portion, and the ejection direction of the etching liquid ejected from the liquid ejection portion, so that the etching of the substrate is performed under an immediate detachment condition, and the immediate detachment condition is a condition that the etching liquid ejected by the liquid ejection portion immediately detaches from the substrate after landing on the liquid landing point on the peripheral portion of the substrate.
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Citation Information

Patent Citations

  • Substrate processing apparatus and substrate processing method

    JP2014086638A

  • Substrate processing apparatus and substrate processing method

    JP2014086639A

  • Substrate processing apparatus

    JP2013251335A