Display device and method of manufacturing the same

Abstract

A display device and a method of manufacturing the same are provided. The display device includes a base substrate, an organic layer disposed on the base substrate, and a first conductive layer disposed on the organic layer, wherein the first conductive layer includes a plurality of stacked films, the plurality of stacked films include a first conductive film disposed directly on the organic layer and a second conductive film disposed on the first conductive film, and the first conductive film has a higher oxygen concentration than an oxygen concentration of the second conductive film.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to and all benefits derived therefrom of Korean Patent Application No. 10-2019-0082724, filed on July 9, 2019, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] This disclosure relates to display devices, and more specifically, to display devices that can switch between a folded state and an unfolded state. Background Technology

[0004] Display devices for displaying images may include display panels, such as organic light-emitting display panels or liquid crystal display panels.

[0005] Mobile electronic devices typically include a display device to provide images to the user. There is an increasing demand for mobile electronic devices that are smaller or thinner than conventional mobile electronic devices but have a larger display screen. Foldable or flexible display devices, with foldable and unfoldable structures, are also being developed to provide a larger screen only when in use. Summary of the Invention

[0006] Embodiments of this disclosure relate to a display device in which the loss of an organic film disposed on the underside is effectively prevented by an etching process of a conductive layer.

[0007] According to an embodiment of the present disclosure, the display device includes: a substrate; an organic layer disposed on the substrate; and a first conductive layer disposed on the organic layer, wherein the first conductive layer includes a plurality of stacked films, the plurality of stacked films including a first conductive film directly disposed on the organic layer and a second conductive film disposed on the first conductive film, and the first conductive film has an oxygen concentration higher than that of the second conductive film.

[0008] In an embodiment, the first conductive film may have an etching rate in the range of about 60 nanometers per minute (nm / min) to about 80 nm / min, relative to a flow ratio of about 0.17 to about 0.22 for the organic gas etchant.

[0009] In an embodiment, the organic gas etchant may include at least one material selected from methane gas (CH4), ethane gas (C2H6), and acetic acid gas (CH3COOH).

[0010] In an embodiment, the second conductive film may include at least one material selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).

[0011] In one embodiment, the second conductive film may include a first sub-conductive film disposed on the first conductive film and a second sub-conductive film disposed on the first sub-conductive film.

[0012] In an embodiment, the first sub-conductive film may include aluminum (Al), and the second sub-conductive film may include titanium (Ti).

[0013] In one embodiment, the display device may further include a third conductive film disposed between the first sub-conductive film and the first conductive film, wherein the third conductive film may have an oxygen concentration lower than that of the first conductive film.

[0014] In one embodiment, the first conductive film may have a side surface that is disposed further inward than the side surface of the second conductive film, and the distance by which the side surface of the first conductive film is recessed further inward than the side surface of the second conductive film may be in the range of about 0.4 micrometers (μm) to about 0.6 μm.

[0015] In an embodiment, the display device may further include an inorganic layer disposed below the organic layer and a second conductive layer disposed between the inorganic layer and the organic layer. The second conductive layer may include a plurality of stacked films. The plurality of stacked films may include a third conductive film disposed between the inorganic layer and the organic layer and directly disposed on the upper surface of the inorganic layer, and a fourth conductive film disposed between the third conductive film and the organic layer. The third conductive film may have a higher oxygen concentration than the fourth conductive film.

[0016] In an embodiment, the third conductive film may have an etching rate in the range of about 60 nm / min to about 80 nm / min relative to a flow ratio of about 0.17 to about 0.22 for the organic gas etchant.

[0017] According to embodiments of the present disclosure, a method of manufacturing a display device includes: providing a conductive layer comprising a plurality of films sequentially stacked on an organic layer, wherein the plurality of films include a first conductive film provided directly on the organic layer and a second conductive film provided on the first conductive film; etching the second conductive film using a first etchant to form a second conductive pattern; and etching the first conductive film using a second etchant different from the first etchant to form a first conductive pattern.

[0018] In one embodiment, the first conductive film may have a higher oxygen concentration than the second conductive film.

[0019] In one embodiment, etching the second conductive film with a first etchant to form a second conductive pattern may include: dry etching the second conductive film with the first etchant to form a second conductive pattern.

[0020] In an embodiment, the first etchant may include an inorganic gas etchant, and the inorganic gas etchant may include at least one material selected from chlorine (Cl2) and bromine chloride (BrCl).

[0021] In one embodiment, etching the first conductive film with a second etchant different from the first etchant to form a first conductive pattern may include: dry etching the first conductive film with a second etchant different from the first etchant to form a first conductive pattern.

[0022] In an embodiment, the second etchant may include an organic gas etchant, and the organic gas etchant may include at least one material selected from methane gas (CH4), ethane gas (C2H6), and acetic acid gas (CH3COOH).

[0023] In one embodiment, dry etching the first conductive film using a second etchant different from the first etchant to form a first conductive pattern may include: dry etching the first conductive film at an etching rate in the range of about 60 nm / min to about 80 nm / min at a flow ratio in the range of about 0.17 to about 0.22 relative to the organic gas etchant.

[0024] In one embodiment, etching the first conductive film with a second etchant different from the first etchant to form a first conductive pattern may include: wet etching the first conductive film with a second etchant different from the first etchant to form a first conductive pattern.

[0025] In one embodiment, wet etching of the first conductive film using a second etchant different from the first etchant to form a first conductive pattern may include: forming an undercut shape in which the first conductive pattern is disposed more inwardly than the side surface of the second conductive pattern.

[0026] In an embodiment, in the undercut shape, the distance by which the side surface of the first conductive film is recessed further inward than the side surface of the second conductive film can be in the range of about 0.4 μm to about 0.6 μm. Attached Figure Description

[0027] Referring to the accompanying drawings, the above and other features of this disclosure will become more apparent by describing in detail its exemplary embodiments, in which:

[0028] Figure 1 A perspective view illustrating a display device according to an exemplary embodiment;

[0029] Figure 2 For alongFigure 1 A cross-sectional view taken from line II-II';

[0030] Figure 3 A cross-sectional view of a display device in a folded state according to an exemplary embodiment;

[0031] Figure 4 A cross-sectional view of a display panel according to an exemplary embodiment is shown;

[0032] Figure 5 A cross-sectional view of multiple stacked films of a fourth conductive layer according to an exemplary embodiment;

[0033] Figure 6 A flowchart illustrating a method for manufacturing a display device according to an exemplary embodiment;

[0034] Figures 7 to 9 A cross-sectional view illustrating the manufacturing process of a method for manufacturing a display device according to an exemplary embodiment;

[0035] Figure 10 A table showing the boiling points of the etching gases;

[0036] Figure 11 A graph showing the etching rate of the first conductive film according to the flow rate ratio of the organic etching gas;

[0037] Figure 12 A cross-sectional view illustrating a plurality of stacked films of a fourth conductive layer according to an alternative exemplary embodiment;

[0038] Figure 13 A cross-sectional view of multiple stacked films of a fourth conductive layer according to another alternative exemplary embodiment;

[0039] Figure 14 A cross-sectional view of multiple stacked films of a fourth conductive layer according to another alternative exemplary embodiment;

[0040] Figure 15 A cross-sectional view of multiple stacked films of a third conductive layer according to yet another alternative exemplary embodiment;

[0041] Figure 16 A cross-sectional view of multiple stacked films of a third conductive layer according to yet another alternative exemplary embodiment;

[0042] Figure 17 To illustrate a cross-sectional view of multiple stacked films of a third conductive layer according to yet another alternative exemplary embodiment; and

[0043] Figure 18A cross-sectional view of multiple stacked films of a third conductive layer according to yet another alternative exemplary embodiment. Detailed Implementation

[0044] The invention will now be described more fully below with reference to the accompanying drawings, which illustrate preferred embodiments of the invention. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Throughout this specification, the same reference numerals designate the same components. In the drawings, the thickness of layers and regions is exaggerated for clarity.

[0045] It should be understood that when a component or layer is referred to as being "on" another component or layer, the component or layer may be directly on the other component or layer, or there may be intermediate components or layers. Conversely, when a component is referred to as being "directly" on another component, there are no intermediate components.

[0046] It should be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or part from another. Therefore, “first element,” “first component,” “first area,” “first layer,” or “first part” discussed below may be referred to as a second element, second component, second area, second layer, or second part without departing from the teachings herein.

[0047] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms, including “at least one,” unless the context clearly indicates otherwise. “Or” means “and / or.” “At least one of A and B” means “A and / or B.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It should be further understood that when the terms “comprises” and / or “comprising” or “includes” and / or “including” are used in this specification, they indicate the presence of the described features, areas, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integers, steps, operations, elements, components, and / or groups thereof.

[0048] As used herein, “about” or “approximately” includes the stated values ​​and means, taking into account the measurements discussed and the errors associated with the specific quantities (i.e., limitations of the measurement system), within an acceptable range of deviations from the specific values ​​as determined by one of ordinary skill in the art.

[0049] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It should be further understood that terms, such as those defined in commonly used dictionaries, shall be interpreted as having meanings consistent with their meanings in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0050] Exemplary embodiments are described herein with reference to cross-sectional views that serve as schematic illustrations of idealized implementations. Therefore, variations in the shapes of the illustrations should be anticipated due to factors such as manufacturing techniques and / or tolerances. Consequently, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but rather include deviations in shape, for example, due to manufacturing processes. For instance, regions shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, acute angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to represent precise shapes of the regions, nor are they intended to limit the scope of the claims.

[0051] A display device is a device that displays still or moving images. Display devices can be used in portable electronic devices such as mobile phones, smartphones, tablet PCs (“PCs”), smartwatches, watch phones, mobile communication terminals, e-notebooks, e-books, portable multimedia players (“PMPs”), navigation devices, ultra-mobile PCs (“UMPCs”), and can also be used as display screens for various products such as televisions, laptops, monitors, billboards, and devices for the Internet of Things (“IoT”).

[0052] In the following, exemplary embodiments will be described in detail with reference to the accompanying drawings.

[0053] Figure 1 A perspective view of a display device according to an exemplary embodiment. Figure 2 For along Figure 1 The cross-sectional view taken from line II-II'. Figure 3 This is a cross-sectional view showing a display device in a folded state according to an exemplary embodiment.

[0054] See Figures 1 to 3An exemplary embodiment of display device 1 may be a foldable display device. In this document, the term "foldable" may refer to a foldable state, and specifically may refer to the terms "flexible," "rollable," and similar terms. Furthermore, the term "foldable" should be interpreted in conjunction with all terms "partially foldable," "fully foldable," "foldable inward," and "foldable outward."

[0055] In an exemplary embodiment, the display device 1 may include a folding axis AXIS_F that passes perpendicularly through the display device 1 when viewed from a plan view in its thickness direction. The display device 1 may be folded relative to the folding axis AXIS_F.

[0056] Display device 1 may have a substantially rectangular shape in a plan view. Display device 1 may have a rectangular shape with right angles at the corners in a plan view, or a rectangular shape with rounded corners in a plan view. Display device 1 may include four sides LS1, LS2, SS1, and SS2. Display device 1 may have long sides LS1 and LS2 and short sides SS1 and SS2. In an exemplary embodiment, for example, each of the long sides LS1 and LS2 may extend in a first direction DR1, and each of the short sides SS1 and SS2 may extend in a second direction DR2. In the figures, the third direction DR3 is a direction perpendicular to the first direction DR1 and the second direction DR2, or is the thickness direction of display device 1.

[0057] In an exemplary implementation, such as Figure 1 As shown, the folding axis AXIS_F may extend in one direction (e.g., in the second direction DR2) and intersect each of the long sides LS1 and LS2. In such an embodiment, each of the long sides LS1 and LS2 of the display device 1 can be folded. In an alternative exemplary embodiment, the folding axis AXIS_F may extend to intersect each of the short sides SS1 and SS2. In such an embodiment, each of the short sides SS1 and SS2 of the display device 1 can be folded. Hereinafter, for ease of description, such an embodiment will be described in detail, in which, as Figure 1 The folding axis AXIS_F shown extends to intersect with the long sides LS1 and LS2. In an exemplary embodiment, the folding axis AXIS_F may intersect with the central portion of each of the long sides LS1 and LS2, but this disclosure is not limited thereto.

[0058] In this document, unless otherwise specified, the terms "upper part" and "upper surface" refer to the display orientation, and the terms "lower part" and "lower surface" refer to the orientation opposite to the display orientation. Additionally, the terms "above," "below," "left," and "right" refer to the orientation when the display surface is positioned in a standard location and viewed from a plan view in the thickness direction.

[0059] Display device 1 may include a display area DA and a non-display area NA surrounding the display area DA. The display area DA is the area where the screen is displayed, and the non-display area NA is the area where the screen is not displayed. The display area DA may be located at the center of the display device 1. In the folded state of the display device 1, the areas divided by the display area DA relative to the folding axis AXIS_F may overlap each other, and in the unfolded state of the display device 1, these areas may be unfolded, thus exposing the screen in the display area DA.

[0060] In the plan view, downward and upward recessed grooves (e.g., cutouts) define or form in areas adjacent to the first long side LS1 and the second long side LS2 of the display device 1, and these grooves meet the folding axis AXIS_F. A hinge member (not shown) for changing states may be coupled to the recessed portion, but this disclosure is not limited thereto.

[0061] See Figure 2 An exemplary embodiment of the display device 1 can be divided into a folded area FR and non-folded areas NFR1 and NFR2.

[0062] In such an embodiment, the display device 1 may include: a folded area FR disposed in the central area and including a folding axis AXIS_F; and non-folded areas NFR1 and NFR2 separated from each other by the folded area FR.

[0063] The folding area FR is the area in which the display device 1 is folded or bent in the folding direction to have a certain curvature, and the non-folding areas NFR1 and NFR2 can be flat and folded areas. The non-folding areas NFR1 and NFR2 can be disposed on a flat surface that is coplanar with each other. However, this disclosure is not limited to this, and the non-folding areas NFR1 and NFR2 can be partially bent.

[0064] In an exemplary implementation, such as Figure 2 As shown, the display device 1 may include a flexible module 10. The flexible module 10 may include a plurality of stacked components. The flexible module 10 may include a display panel 200, a lower functional component 100 disposed below the display panel 200, an upper functional component 300 disposed above the display panel 200, and a window 400 disposed above the upper functional component 300.

[0065] The lower functional component 100 may be disposed on the bottom surface of the flexible module 10. The lower functional component 100 may include functional layers. The functional layers may be layers that perform buffering, heat dissipation, electromagnetic wave shielding, grounding, strength enhancement, support, pressure sensing, digitization, or similar functions. The lower functional component 100 may be formed as a single layer. However, this disclosure is not limited thereto, and the lower functional component 100 may be formed by stacking different functional layers.

[0066] In one exemplary embodiment, for example, the lower functional member 100 may include a cushioning member. The cushioning member can effectively prevent impacts applied from the outside (e.g., in the downward direction of the lower functional member 100) from being transferred to the display panel 200. The cushioning member may include or be made of a foam material, such as polyurethane (“PU”), thermoplastic polyurethane (“TPU”), silicone (Si) or polydimethylacrylamide (“PDMA”).

[0067] The lower functional member 100 may have a lower light transmittance than the plurality of members (which are disposed on the display panel 200) described later. In an exemplary embodiment, the upper layer disposed on the display panel 200 may have a relatively high light transmittance, thus allowing light emitted upward from the display area of ​​the display panel 200 to pass through. In an exemplary embodiment, the lower functional member 100 may have a relatively low light transmittance, thus blocking light emitted downward from the display area of ​​the display panel 200.

[0068] The display panel 200 can be mounted on the lower functional component 100.

[0069] Display panel 200 can display an image in response to an input data signal. In exemplary embodiments, display panel 200 may be an organic light-emitting display panel, a liquid crystal display panel, a plasma display panel, an electrophoretic display panel, an electrowetting display panel, a quantum dot light-emitting display panel, or a micro light-emitting diode (“LED”) display panel. Hereinafter, for ease of description, exemplary embodiments of display panel 200 as an organic light-emitting display panel will be described in detail, but the invention is not limited thereto.

[0070] The display panel 200 may include a flexible substrate, which may include a flexible polymer material, such as polyimide (“PI”). Therefore, the display panel 200 may be foldable, flexible, or rollable. The display panel 200 may have a shape substantially similar to the planar shape of the display device 1.

[0071] Multiple pixels PX can be disposed in the display area DA of the display panel 200, and the signal lines or driving circuits for applying signals to each pixel PX can be disposed in the non-display area NA. Additionally, a black matrix having a rectangular frame shape in the plan view can be disposed in the non-display area NA.

[0072] A pixel PX may include a light-emitting layer and a circuit layer configured to control the amount of light emitted from the light-emitting layer. The circuit layer may include multiple lines, multiple electrodes, and transistors. In an exemplary embodiment, the light-emitting layer may include an organic light-emitting material. The light-emitting layer may be sealed with an encapsulation film. The encapsulation film seals the light-emitting layer to prevent moisture and the like from being introduced into the light-emitting layer from the outside. The encapsulation film may be formed as a single inorganic film or multiple inorganic films, or the encapsulation film may be formed as a stacked film (where inorganic and organic films are stacked alternately on top of each other).

[0073] The detailed cross-sectional shape of the display area DA of the display panel 200 will be described in more detail later.

[0074] The upper functional component 300 can be mounted on the display panel 200.

[0075] The upper functional component 300 may include a functional layer. The functional layer may be a layer performing touch sensing, color filtering, color conversion, polarization, anti-reflection, biometric information recognition (e.g., fingerprint recognition), or similar functions. The upper functional component 300 may include, for example, an anti-reflection component. The functional layer may be a sheet layer composed of sheets, a film layer made of membranes, a thin film layer, a coating, a panel, a plate, or the like. The upper functional component 300 may be formed as a single layer for one function. However, this disclosure is not limited thereto, and the upper functional component 300 may be formed by stacking different functional layers.

[0076] Window 400 can be installed on the upper functional component 300.

[0077] Window 400 serves to cover and protect components 100, 200, and 300 disposed below window 400. Window 400 may include or be made of glass, quartz, or the like. In an exemplary embodiment, the thickness of window 400 may be less than about 100 micrometers (μm). In such an embodiment, window 400 is thin to reduce stress when display device 1 is folded, and the degree of structural deformation is not significant even when repeatedly folded and unfolded. In an exemplary embodiment, window 400 may include ultrathin glass (“UTG”).

[0078] The flexible module 10 may include a plurality of adhesive films 901, 911, and 921 between components 100, 200, 300, and 400 to couple the components to each other. A first adhesive film 901 may be disposed between the lower functional component 100 and the display panel 200, and may couple the lower functional component 100 and the display panel 200 to each other. A second adhesive film 911 may be disposed between the display panel 200 and the upper functional component 300, and may couple the display panel 200 and the upper functional component 300 to each other. A third adhesive film 921 may be disposed between the upper functional component 300 and the window 400, and may couple the upper functional component 300 and the window 400 to each other.

[0079] The plurality of adhesive films 901, 911, and 921 may be films having adhesive properties on both their upper and lower surfaces. In one exemplary embodiment, for example, the plurality of adhesive films 901, 911, and 921 may include pressure-sensitive adhesives (“PSA”), optically clear adhesives (“OCA”), or optically clear resins (“OCR”). The adhesive films may include acrylic resins, silicone resins, or the like. In an exemplary embodiment, the adhesive films may have an elongation in the range of about 100% to about 1,000%.

[0080] The display device 1 may further include support plates 501 and 502 and a fourth adhesive film 931. The support plates 501 and 502 may be disposed below the display module 10, and the fourth adhesive film may be disposed between the support plates 501 and 502 and the display module 10.

[0081] Support plates 501 and 502 prevent the display panel 200 from bending under external force, or reduce the degree of bending of the display panel 200 (e.g., bending angle or bending radius of curvature). That is, even when an external force is applied, support plates 501 and 502 can keep the display panel 200 in a relatively flat state.

[0082] Support plates 501 and 502 may comprise rigid or semi-rigid materials. Specifically, support plates 501 and 502 may comprise or be made of the following: metallic materials, such as stainless steel (“SUS”) or aluminum, or polymers, such as polymethyl methacrylate (“PMMA”), polycarbonate (“PC”), polyvinyl alcohol (“PVA”), acrylonitrile-butadiene-styrene (“ABS”), or polyethylene terephthalate (“PET”). In one exemplary embodiment, for example, support plates 501 and 502 may be SUS films having a thickness in the range of about 200 μm to about 250 μm. In an alternative embodiment, for example, support plates 501 and 502 may be aluminum films having a thickness in the range of about 200 μm to about 250 μm.

[0083] In an exemplary embodiment, support plates 501 and 502 may include a first support plate 501 and a second support plate 502 spaced apart from each other. The first support plate 501 may be configured to overlap with a portion of a first non-folded region NFR1 and a folded region FR. The second support plate 502 may be configured to overlap with a portion of a second non-folded region NFR2 and a folded region FR. The first support plate 501 and the second support plate 502 may be spaced apart from each other by a predetermined distance relative to the folding axis AXIS_F. In an exemplary embodiment, for example, the predetermined distance may be about 50 μm or less.

[0084] A fourth adhesive film 931 may be disposed on the entire surface of the non-folded regions NFR1 and NFR2 and the folded region FR. The fourth adhesive film 931 may couple the support plates 501 and 502 to the lower functional member 100. The fourth adhesive film 931 may comprise or be made of the same material as the adhesive films 901, 911, and 921 described above. In one exemplary embodiment, for example, the fourth adhesive film 931 may comprise or be made of PSA, but this disclosure is not limited thereto.

[0085] See Figure 3 The flexible module 10 and the fourth adhesive film 931 can be folded by external force in the folded area FR to have a certain curvature, but can be substantially unfolded by external force in the unfolded areas NFR1 and NFR2. That is, the flexible module 10 and the fourth adhesive film 931 can be disposed on flat surfaces that are coplanar with each other in the unfolded areas NFR1 and NFR2.

[0086] When the external force is in the folding direction ( Figure 3 When the folding area FR is applied to one side of the display device 1 (e.g., its right side) in the upward direction, the folding area FR can be bent or folded, and the second non-folding area NFR2 can be moved or rotated in the folding direction to overlap or be opposite to the first non-folding area NFR1.

[0087] Figure 4 This is a cross-sectional view of a display panel according to an exemplary embodiment.

[0088] See Figure 4 In an exemplary embodiment, the substrate 201 may be a flexible substrate including PI or the like as described above. The substrate 201 is disposed on the entirety of both the display area DA and the non-display area NA. The substrate 201 serves to support various components disposed thereon.

[0089] The buffer layer 202 may be disposed on or above the substrate 201. The buffer layer 202 prevents moisture and oxygen from penetrating through the substrate 201 from the outside. The buffer layer 202 may include materials selected from silicon nitride (SiN). x ) films, silicon oxide (SiO2) films and silicon oxynitride (SiO2) filmsx N y At least one material in the membrane.

[0090] Semiconductor layer 105 may be disposed on buffer layer 202. The channel of thin-film transistor (TFT) is defined in semiconductor layer 105. Semiconductor layer 105 may be disposed in each pixel of display area DA. Semiconductor layer 105 may be further disposed in non-display area NA. Semiconductor layer 105 may include source / drain regions and active regions. Semiconductor layer 105 may include polysilicon.

[0091] The first insulating layer 211 may be disposed on the semiconductor layer 105. The first insulating layer 211 may be disposed on the entire surface of the substrate 201 or above the entire surface of the substrate 201. The first insulating layer 211 may be a gate insulating film with gate insulating function. The first insulating layer 211 may include silicon compounds, metal oxides, or the like. In an exemplary embodiment, for example, the first insulating layer 211 may include at least one material selected from silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, and combinations thereof.

[0092] A first conductive layer 220 may be disposed on a first insulating layer 211. The first conductive layer 220 may include the gate electrode GE of a thin-film transistor (TFT) and the first electrode CE1 of a storage capacitor Cst. The first conductive layer 220 may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The first conductive layer 220 may be a single film, or a stack of films comprising or made of materials selected from the above materials.

[0093] The second insulating layer 212 may be disposed on or above the first conductive layer 220. The second insulating layer 212 may insulate the first conductive layer 220 and the second conductive layer 230 from each other. The second insulating layer 212 may include or be made of a material selected from the materials described above for the first insulating layer 211.

[0094] A second conductive layer 230 may be disposed on the second insulating layer 212. The second conductive layer 230 may include a second electrode CE2 of the storage capacitor Cst. The material of the second conductive layer 230 may be selected from the material described above for the first conductive layer 220. The capacitor may be defined by the first electrode CE1 and the second electrode CE2 of the storage capacitor Cst through the second insulating layer 212.

[0095] The third insulating layer 213 may be disposed on or above the second conductive layer 230. The third insulating layer 213 may include at least one material selected from the materials described above for the first insulating layer 211. In an exemplary embodiment, the third insulating layer 213 may include or be made of an organic insulating material. That is, the third insulating layer 213 may be an organic layer. In such an embodiment, the organic insulating material may be selected from the material of the first through layer VIA1, which will be described below.

[0096] The third conductive layer 240 may be disposed on the third insulating layer 213. The third conductive layer 240 may include a source electrode SE, a drain electrode DE, and a high-potential voltage electrode ELVDDE. The third conductive layer 240 may include at least one material selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The third conductive layer 240 may be a single film made of a material selected from the above materials. However, this disclosure is not limited thereto, and alternatively, the third conductive layer 240 may be a stacked film.

[0097] The first through-layer VIA1 may be disposed on or above the third conductive layer 240. The first through-layer VIA1 may include an organic insulating material. That is, the first through-layer VIA1 may be an organic layer. The organic insulating material may include at least one material selected from polyacrylate resins, epoxy resins, phenolic resins, polyamide resins, polyimide resins, unsaturated polyester resins, polyphenylene ether resins, polyphenylene sulfide resins, and benzocyclobutene (“BCB”).

[0098] A fourth conductive layer 250 may be disposed on the first through layer VIA1. The fourth conductive layer 250 may include a data line DL, a connection electrode CNE, and a high-potential voltage line ELVDDL. The data line DL may be electrically connected to the source electrode SE of the thin-film transistor TFT via a contact hole (defined by the first through layer VIA1). The connection electrode CNE may be electrically connected to the drain electrode DE of the thin-film transistor TFT via a contact hole (defined by the first through layer VIA1). The high-potential voltage line ELVDDL may be electrically connected to the high-potential voltage electrode ELVDDE via a contact hole (defined by the first through layer VIA1).

[0099] The fourth conductive layer 250 may include at least one material selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). In an exemplary embodiment, the fourth conductive layer 250 may have a multilayer structure. In such an embodiment, the conductive layer 250 may include or be defined by multiple stacked films. Reference will be made later. Figure 5 The structure of the multiple stacked films of the fourth conductive layer 250 is described in more detail.

[0100] The second through layer VIA2 is disposed on or above the fourth conductive layer 250. The second through layer VIA2 may include at least one material selected from the materials described above in the first through layer VIA1.

[0101] The anode electrode AND is disposed on the second through layer VIA2. The anode electrode AND can be electrically connected to the connecting electrode CNE through a contact hole (defined by the second through layer VIA2).

[0102] A dam bank may be disposed on the anode electrode AND. The dam bank may have contact holes through which the anode electrode AND is exposed. The dam bank may comprise or be made of an organic or inorganic insulating material. In one exemplary embodiment, for example, the dam bank may comprise or be made of at least one material selected from photoresists, polyimide resins, acrylic resins, silicon compounds, and polyacrylic resins.

[0103] The organic layer EL can be disposed on the upper surface of the anode electrode AND and in the opening of the dam layer BANK. The cathode electrode CAT is disposed on the organic layer EL and the dam layer BANK. The cathode electrode CAT can be a common electrode disposed in multiple pixels.

[0104] A thin-film encapsulation layer 270 is disposed on the cathode electrode CAT. The thin-film encapsulation layer 270 may cover an organic light-emitting diode (“OLED”). The thin-film encapsulation layer 270 may be a stack of films (where inorganic and organic films are stacked alternately on top of each other). In an exemplary embodiment, for example, the thin-film encapsulation layer 270 may include a first encapsulating inorganic film 271, an encapsulating organic film 272, and a second encapsulating inorganic film 273 stacked sequentially on top of each other.

[0105] Figure 5 This is a cross-sectional view illustrating a plurality of stacked films of a fourth conductive layer according to an exemplary embodiment.

[0106] See Figure 5As described above, the fourth conductive layer 250 includes a plurality of stacked films. The fourth conductive layer 250 includes a first conductive film 251 directly disposed on the first through layer VIA1, a second conductive film 252 disposed on the first conductive film 251, and a third conductive film 253 disposed on the second conductive film 252.

[0107] The first conductive film 251 may include or be made of a material having an oxygen concentration higher than that of the second conductive film 252 and the third conductive film 253.

[0108] In this embodiment, the first conductive film 251 is made of a material with a higher oxygen concentration than the second conductive film 252 and the third conductive film 253, so that when the fourth conductive layer 250 disposed on the first through layer VIA1 is etched, the loss of the first through layer VIA1 can be effectively prevented. During dry etching, for example, all of the conductive films of the fourth conductive layer 250 can be simultaneously dry-etched. Compared to the conductive film directly disposed on the first through layer VIA1, the conductive film on the upper side of the first through layer VIA1 is easier to dry-etch, while the conductive film on the lower side is less likely to be etched compared to the conductive film disposed on the upper side. Furthermore, for example, when the first conductive film directly disposed on the first through layer VIA1 is made of a material that is easily oxidized (e.g., titanium (Ti)), the first conductive film can be easily oxidized. Since the bonding force between the atoms constituting the oxidized first conductive film is higher than the bonding force between the atoms of the unoxidized first conductive film, the etching power can be increased to etch the oxidized first conductive film. However, in this case, the first through-layer VIA1 disposed beneath the first conductive film will also be partially lost through dry etching. The structural material of the partially removed first through-layer VIA1 can remain in the vibration chamber, causing a decrease in the reliability of subsequent processes. In addition, the partial loss of the first through-layer VIA1 can become visible spots.

[0109] In an exemplary embodiment, since the first conductive film 251 of the fourth conductive layer 250 directly disposed on the first through layer VIA1 has a higher oxygen concentration than the second conductive film 252 and the third conductive film 253, the first conductive film 251 can be effectively prevented from being easily oxidized, thereby making it easier to etch the first conductive film 251 without increasing the etching power. In such an embodiment, since the first conductive film 251 is not easily oxidized, the etching rate can be easily adjusted, thereby performing a more reliable etching process.

[0110] In an exemplary embodiment, the first conductive film 251 may include or be made of a material having a high etching rate relative to the organic gas etchant described below. In one exemplary embodiment, for example, relative to an organic gas etchant having a flow ratio in the range of about 0.17 to about 0.22, the first conductive film 251 may include a conductive material having an etching rate in the range of about 60 nanometers per minute (nm / min) to about 80 nm / min.

[0111] In exemplary embodiments, for example, the first conductive film 251 may include or be made of a transparent conductive oxide, such as indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (“ZnO”), indium tin zinc oxide (“ITZO”), magnesium oxide (“MgO”), and indium tin gallium oxide (“ITGO”). The second conductive film 252 may include or be made of aluminum (Al), and the third conductive film 253 may include or be made of titanium (Ti), but this disclosure is not limited thereto.

[0112] In an exemplary embodiment, as described below, the etching processes for the second conductive film 252 and the third conductive film 253 disposed on the first conductive film 251 can be performed sequentially with the etching process for the first conductive film 251. In such an embodiment, the second conductive film 252 and the third conductive film 253 are first dry-etched, and the first conductive film 251 can be dry-etched or wet-etched. The etching processes for the second conductive film 252 and the third conductive film 253 and the etching process for the first conductive film 251 can be performed using different etchants. Typically, the second conductive film 252 and the third conductive film 253 can be formed by dry etching, and the first conductive film 251 can be formed by dry etching or wet etching.

[0113] refer to Figures 6 to 11 This process will be described in detail below.

[0114] Figure 6 This is a flowchart illustrating a method for manufacturing a display device according to an exemplary embodiment. Figures 7 to 9 A cross-sectional view illustrating the manufacturing process of a method for manufacturing a display device according to an exemplary embodiment. Figure 10 A table showing the boiling points of the etching gases. Figure 11 A graph showing the etching rate of the first conductive film based on the flow rate ratio of the organic etching gas. More specifically, Figure 10 The boiling points of the first etchant used for dry etching the second conductive films 252a and 253a and the boiling point of the second etchant used for dry etching the first conductive film 251a are shown. Figure 11 The etching rate of the first conductive film 251a is shown under a constant flow ratio of the material of the second etchant.

[0115] See Figure 6 and Figure 7 A conductive layer 250a is provided, the conductive layer 250a including a plurality of films sequentially stacked on an organic layer (i.e., the first through layer VIA1), namely, a first conductive film 251a directly formed on the organic layer (i.e., the first through layer VIA1) and second conductive films 252a and 253a formed on the first conductive film 251a (S10), wherein the second conductive films 252a and 253a include a first sub-conductive film 252a and a second sub-conductive film 253a.

[0116] The structural material of the first conductive film 251a can be referenced above. Figure 5 The first conductive film 251 described above has the same structural material. The first sub-conductive film 252a has the same structural material as described above. Figure 5 The second conductive film 252 described above has the same structural material. The second sub-conductive film 253a has the same structural material as described above. Figure 5 The third conductive film 253 described has the same structure and material.

[0117] In such an embodiment, the structural material of the first conductive film 251a may include a material having an oxygen concentration that is higher than that of the structural materials of the first sub-conductive film 252a and the second sub-conductive film 253a.

[0118] In such an embodiment, as described above, since the structural material of the first conductive film 251a includes a material having a higher oxygen concentration than the structural materials of the first sub-conductive film 252a and the second sub-conductive film 253a, the loss of the first through layer VIA1 can be effectively prevented when the conductive layer 250a disposed on the first through layer VIA1 is etched.

[0119] In such an embodiment, the structural material of the first conductive film 251a may include a material having a high etching rate relative to the organic gas etchant as described above. In an exemplary embodiment, for example, the first conductive film 251a may include a conductive material having an etching rate in the range of about 60 nm / min to about 80 nm / min relative to an organic gas etchant having a flow ratio in the range of about 0.17 to about 0.22.

[0120] See Figure 6 and Figure 8 The second conductive films 252a and 253a are etched using a first etchant to form a second conductive pattern 252. Figure 5 The second conductive film) and 253 ( Figure 5 (S20) The third conductive film.

[0121] Etching the second conductive films 252a and 253a with the first etchant to form the second conductive patterns 252 and 253 may include: dry etching the second conductive films 252a and 253a with the first etchant to form the second conductive patterns 252 and 253.

[0122] The first etchant may be an inorganic gas. In one exemplary embodiment, the inorganic gas etchant may include chlorine (Cl2), bromine chloride (BrCl), or the like, but is not limited thereto.

[0123] The first etchant may have a high etching rate relative to the second conductive films 252a and 253a, but may not have a high etching rate relative to the first conductive film 251a. That is, the etching rate of the first etchant relative to the second conductive films 252a and 253a may be much higher than the etching rate of the first etchant relative to the first conductive film 251a. Therefore, during the process of dry etching the second conductive films 252a and 253a using the first etchant, the first conductive film 251a may be hardly etched or may not be etched at all.

[0124] Next, see Figure 5 as well as Figure 6 and Figure 9 The first conductive film 251a is etched using a second etchant different from the first etchant to form the first conductive pattern 251 or Figure 5 The first conductive film 251 (S30).

[0125] Etching the first conductive film 251a with a second etchant different from the first etchant to form the first conductive pattern 251 may include: dry etching the first conductive film 251a with a second etchant different from the first etchant to form the first conductive pattern 251.

[0126] The second etchant may include the organic gas etchant as described above. In one exemplary embodiment, the organic gas etchant may include, for example, methane gas (CH4), ethane gas (C2H6), acetic acid gas (CH3COOH), or the like, but is not limited thereto.

[0127] Dry etching the first conductive film 251a with a second etchant different from the first etchant to form the first conductive pattern 251 may further include: forming a photoresist PR on the second conductive patterns 252 and 253 to have a width greater than the width of the second conductive patterns 252 and 253, and dry etching the first conductive film 251a to form the first conductive pattern 251.

[0128] Despite Figures 7 to 9Not shown, but etching the first conductive film 251a with a second etchant different from the first etchant to form the first conductive pattern 251 may include: wet etching the first conductive film 251a with a second etchant different from the first etchant to form the first conductive pattern 251.

[0129] Wet etching the first conductive film 251a with a second etchant different from the first etchant to form the first conductive pattern 251 may further include forming an undercut shape in which the first conductive pattern 251 is disposed more inwardly than the side surfaces of the second conductive patterns 252 and 253.

[0130] The undercut shape in which the first conductive pattern 251 is disposed more inwardly than the side surfaces of the second conductive patterns 252 and 253 may further include: forming the undercut shape such that the side surface of the first conductive pattern 251 is recessed more inwardly than the side surfaces of the second conductive patterns 252 and 253 by a distance in the range of about 0.4 μm to about 0.6 μm.

[0131] See Figure 10 , Figure 10 The boiling point of the inorganic gas etchant that can be used as the first etchant is higher than that of the organic gas etchant that can be used as the second etchant.

[0132] More specifically, among the inorganic gas etchants that can be used as the first etchant, indium fluoride (InF3) may have a boiling point of about 800°C, indium chloride (InCl3) may have a boiling point of about 230°C, and indium bromide (InBl3) may have a boiling point of about 180°C.

[0133] On the other hand, an organic gas etchant that can be used as a second etchant, namely, an indium methyl compound ((CH3)3In), can have a boiling point of about 60°C.

[0134] That is, since the second etchant used during the dry etching process of the first conductive film 251a has a lower boiling point than the first etchant, the second etchant retained after the reaction can be easily removed during the dry etching process of the first conductive film 251a.

[0135] See Figure 11 , Figure 11 As shown, the first conductive film 251a has an etching rate, for example, in the range of about 60 nm / min to about 80 nm / min, relative to an organic gas etchant having a flow ratio in the range of about 0.17 to about 0.22. Such characteristics have been described above, and any further detailed description thereof will be omitted.

[0136] Alternative exemplary implementations will be described below. In the following exemplary implementations, the same reference numerals will be given to components that are the same as or similar to those in the exemplary implementations described above, and any repeated detailed descriptions will be omitted or simplified.

[0137] Figure 12 A cross-sectional view of multiple stacked films of a fourth conductive layer according to an alternative exemplary embodiment.

[0138] See Figure 12 In this embodiment, the fourth conductive layer 250_1 is related to the above reference layer. Figure 5 The fourth conductive layer 250 described is basically the same, except that the fourth conductive film 254 can be further disposed between the first conductive film 251 and the second conductive film 252.

[0139] The fourth conductive film 254 may include at least one material selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).

[0140] In one exemplary embodiment, for example, the fourth conductive film 254 may include titanium (Ti), but this disclosure is not limited thereto.

[0141] In this embodiment, since the first conductive film 251 of the fourth conductive layer 250_1 directly disposed on the first through layer VIA1 has a higher oxygen concentration than the second conductive film 252 and the third conductive film 253, the first conductive film 251 can be prevented from being easily oxidized, thereby making it easier to etch the first conductive film 251 without increasing the etching power. In this embodiment, since the first conductive film 251 is not easily oxidized, the etching rate can be easily adjusted, thereby performing a more reliable etching process.

[0142] Figure 13 A cross-sectional view of multiple stacked films of a fourth conductive layer according to another alternative exemplary embodiment.

[0143] See Figure 13 In such an embodiment, the fourth conductive layer 250_2 and Figure 5 The fourth conductive layer 250 is basically the same, except that the first conductive film 251_1 has an undercut shape. In the undercut shape, the side surface of the first conductive film 251_1 is set more inward than the side surfaces of the second conductive film 252 and the third conductive film 253 above it.

[0144] In such an embodiment, the first conductive film 251_1 of the fourth conductive layer 250_2 may have an undercut shape, in which the side surface of the first conductive film 251_1 is disposed further inward than the side surfaces of the second conductive film 252 and the third conductive layer film 253 above it.

[0145] As described in the method of manufacturing a display device according to an exemplary embodiment, such a structure can be formed when a first conductive film 251_1 is formed by wet etching using a third etchant different from the first etchant. The third etchant may include acidic materials, such as phosphoric acid, nitric acid, or acetic acid, but this disclosure is not limited thereto.

[0146] The distance d1 by which the side surface of the first conductive film 251_1 is more recessed inward than the side surfaces of the second conductive film 252 and the third conductive film 253 can be in the range of about 0.4 μm to about 0.6 μm.

[0147] Figure 14 A cross-sectional view of multiple stacked films of a fourth conductive layer according to another alternative exemplary embodiment.

[0148] See Figure 14 In this embodiment, the fourth conductive layer 250_3 is related to the above reference. Figure 13 The fourth conductive layer 250_2 described is basically the same, except that... Figure 14 The fourth conductive film 254 is further disposed between the first conductive film 251_1 and the second conductive film 252.

[0149] In such an embodiment, the fourth conductive film 254 may be further disposed in the fourth conductive layer 250_3, between the first conductive film 251_1 and the second conductive film 252.

[0150] In this implementation, the other components are the same as those referenced above. Figure 13 The other elements described are essentially the same, and any repeated detailed descriptions will be omitted.

[0151] Figure 15 This is a cross-sectional view of multiple stacked films of a third conductive layer according to another alternative exemplary embodiment.

[0152] See Figure 15 In such an embodiment, the third conductive layer 240 is connected to the reference layer above. Figure 5 The fourth conductive layer 250 described is substantially the same, except that the third conductive layer 240 has a reference. Figure 5 The stacked structure of the fourth conductive layer 250 is described.

[0153] In such an embodiment, the third conductive layer 240 comprises a plurality of stacked films. The third conductive layer 240 may include a first conductive film 241 disposed directly on the third insulating layer 213, a second conductive film 242 disposed on the first conductive film 241, and a third conductive film 243 disposed on the second conductive film 242.

[0154] The first conductive film 241 may include or be made of a material having an oxygen concentration higher than that of the second conductive film 242 and the third conductive film 243.

[0155] In such an embodiment, since the first conductive film 241 comprises or is made of a material having an oxygen concentration higher than that of the second conductive film 242 and the third conductive film 243, the loss of the third conductive layer 240 disposed on the third insulating layer 213 can be effectively prevented when it is etched.

[0156] In such an embodiment, the first conductive film 241 may be made of a material having a high etching rate to the organic gas etchant. In an exemplary embodiment, for example, the first conductive film 241 may comprise a conductive material having an etching rate in the range of about 60 nm / min to about 80 nm / min relative to the organic gas etchant having a flow ratio in the range of about 0.17 to about 0.22.

[0157] In such an embodiment, the first conductive film 241 may include or be made of a transparent conductive oxide, such as ITO, IZO, ZnO, ITZO, MgO, ITGO, or ITZO. The second conductive film 242 may include or be made of aluminum (Al), and the third conductive film 243 may be made of titanium (Ti), but this disclosure is not limited thereto.

[0158] Figure 16 This is a cross-sectional view of multiple stacked films of a third conductive layer according to another alternative exemplary embodiment.

[0159] See Figure 16 In this embodiment, the third conductive layer 240_1 is related to the above reference layer. Figure 12 The fourth conductive layer 250_1 described is substantially the same, especially the third conductive layer 240_1 has Figure 12 The fourth conductive layer 250_1 is stacked in a structure that means the fourth conductive film 244 can be further disposed between the first conductive film 241 and the second conductive film 242.

[0160] In this implementation, the other components are the same as those referenced above. Figure 12 The other elements described are essentially the same, and any repeated detailed descriptions will be omitted.

[0161] Figure 17 This is a cross-sectional view of multiple stacked films of a third conductive layer according to another alternative exemplary embodiment.

[0162] See Figure 17 In this embodiment, the third conductive layer 240_2 is in contact with the reference layer above. Figure 13 The fourth conductive layer 250_2 is substantially the same as described, especially the third conductive layer 240_2 has Figure 13 The stacked structure of the fourth conductive layer 250_2, that is, the first conductive film 241_1 has an undercut shape, in which the side surface of the first conductive film 241_1 is set more inward than the side surfaces of the second conductive film 242 and the third conductive film 243 above it.

[0163] In this implementation, the other components are the same as those referenced above. Figure 13 The other elements described are essentially the same, and any repeated detailed descriptions will be omitted.

[0164] Figure 18 This is a cross-sectional view of multiple stacked films of a third conductive layer according to another alternative exemplary embodiment.

[0165] See Figure 18 In this embodiment, the third conductive layer 240_3 is in relation to the reference layer above. Figure 14 The fourth conductive layer 250_3 is substantially the same as described, especially the third conductive layer 240_3, which has Figure 14 The fourth conductive layer 250_3 is stacked in a structure.

[0166] In this implementation, the other components are the same as those referenced above. Figure 14 The other elements described are essentially the same, and any repeated detailed descriptions will be omitted.

[0167] According to an exemplary embodiment of the present invention, the loss of the organic film disposed on the underside of the conductive layer in the display device is effectively prevented during the etching process of the conductive layer.

[0168] This invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

[0169] Although the invention has been specifically shown and described with reference to embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made in the invention without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. A display device, comprising: Substrate; An organic layer disposed on the substrate; and A first conductive layer is disposed on the organic layer. The first conductive layer comprises multiple stacked films. The plurality of stacked films include a first conductive film directly disposed on the organic layer and a second conductive film disposed on the first conductive film, and The first conductive film has a higher oxygen concentration than the second conductive film.

2. The display device according to claim 1, wherein, The first conductive film has an etching rate in the range of 60 nm / min to 80 nm / min relative to a flow ratio of 0.17 to 0.22 relative to the organic gas etchant.

3. The display device according to claim 2, wherein the organic gas etchant comprises at least one material selected from methane gas, ethane gas and acetic acid gas.

4. The display device according to claim 1, wherein the second conductive film comprises at least one material selected from molybdenum, aluminum, platinum, palladium, silver, magnesium, gold, nickel, neodymium, iridium, chromium, calcium, titanium, tantalum, tungsten, and copper.

5. The display device according to claim 4, wherein the second conductive film comprises a first sub-conductive film disposed on the first conductive film and a second sub-conductive film disposed on the first sub-conductive film.

6. The display device according to claim 5, wherein: The first sub-conductive film comprises aluminum, and The second conductive film comprises titanium.

7. The display device according to claim 5, further comprising: A third conductive film is disposed between the first sub-conductive film and the first conductive film. The third conductive film has a lower oxygen concentration than the first conductive film.

8. The display device according to claim 1, wherein: The first conductive film has a side surface that is disposed further inward than the side surface of the second conductive film, and The side surface of the first conductive film is recessed inward by a distance ranging from 0.4 µm to 0.6 µm compared to the side surface of the second conductive film.

9. A method for manufacturing a display device, the method comprising: A conductive layer is provided comprising a plurality of films sequentially stacked on an organic layer, wherein the plurality of films include a first conductive film provided directly on the organic layer and a second conductive film provided on the first conductive film; The second conductive film is etched using a first etchant to form a second conductive pattern; and The first conductive film is etched using a second etchant, which is different from the first etchant, to form a first conductive pattern. The first conductive film has a higher oxygen concentration than the second conductive film.

Images