Display device and method of manufacturing the same

Abstract

A display device is provided, comprising: a first substrate; a pixel electrode located on the first substrate; a pixel defining layer having an opening that at least partially exposes the pixel electrode; a light-emitting layer located on the pixel electrode; an auxiliary electrode located on the same layer as the pixel electrode; a partition wall located on the auxiliary electrode and at least partially exposing a side surface of the auxiliary electrode; an organic layer located on the partition wall; and a common electrode continuously arranged on the light-emitting layer and the organic layer, wherein a side surface of the partition wall has an inverted cone shape and the common electrode contacts a side surface of the auxiliary electrode.

Description

Technical Field

[0001] The present disclosure relates to a display device and a method of manufacturing the display device. Background Art

[0002] As multimedia develops, display devices are becoming more and more important. Therefore, various display devices such as liquid crystal display devices (LCDs), organic light emitting diode display devices (OLEDs), etc. are being developed.

[0003] Among these display devices, OLED includes an organic light-emitting device (or organic light-emitting diode) as a self-luminous device. The organic light-emitting device may include two opposing electrodes and an organic light-emitting layer disposed between the two opposing electrodes. Electrons and holes provided from the two electrodes recombine in the light-emitting layer to generate excitons, and the generated excitons transition from an excited state to a ground state, so that light can be emitted.

[0004] Since a separate light source is not required, the OLED can be formed not only to have low power consumption and be thin and light, but also to have high quality characteristics such as a wide viewing angle, high brightness and contrast, fast response speed, etc. Therefore, the OLED is attracting attention as a next-generation display device. Summary of the invention

[0005] Aspects of embodiments of the present disclosure provide a display device capable of minimizing a voltage drop or reducing the possibility of a voltage drop.

[0006] Aspects of embodiments of the present disclosure also provide a method of manufacturing a display device capable of minimizing a voltage drop of the display device while ensuring economic feasibility of a process.

[0007] According to aspects of an embodiment of the present disclosure, a display device includes: a first substrate; a pixel electrode located on the first substrate; a pixel defining layer having an opening that at least partially exposes the pixel electrode; a light-emitting layer located on the pixel electrode; an auxiliary electrode located at the same layer as the pixel electrode; a partition wall located on the auxiliary electrode and at least partially exposing a side surface of the auxiliary electrode; an organic layer located on the partition wall; and a common electrode continuously arranged on the light-emitting layer and the organic layer, wherein a side surface of the partition wall has an inverted cone shape, and wherein the common electrode contacts the side surface of the auxiliary electrode.

[0008] In an exemplary embodiment, a first tapered angle between a side surface of the partition wall and an upper surface of the auxiliary electrode may be greater than a second tapered angle between a side surface of the pixel defining layer and an upper surface of the pixel electrode.

[0009] In exemplary embodiments, a side surface of the partition wall may contact the common electrode.

[0010] In an exemplary embodiment, the display device may further include a compensation electrode electrically connected to the auxiliary electrode.

[0011] In an exemplary embodiment, the display device may further include a source electrode or a drain electrode between the first substrate and the pixel electrode, the pixel electrode may be electrically connected to the source electrode or the drain electrode, and the compensation electrode may be located at the same layer as the source electrode or the drain electrode.

[0012] In exemplary embodiments, the common electrode may be electrically connected to the compensation electrode.

[0013] In exemplary embodiments, a lower surface of the partition wall may contact the auxiliary electrode, and an upper surface of the partition wall may contact the organic layer.

[0014] In exemplary embodiments, the partition wall and the pixel defining layer may be made of the same material.

[0015] In an exemplary embodiment, the partition wall and the pixel defining layer may include SiN x 、SiO x or SiO x N y .

[0016] In exemplary embodiments, the partition wall may include a conductive material.

[0017] In exemplary embodiments, a lower surface of the organic layer may contact the partition wall, and an upper surface of the organic layer may contact the common electrode.

[0018] In an exemplary embodiment, the organic layer and the light emitting layer may be made of the same material.

[0019] In exemplary embodiments, the organic layer may be spaced apart from the light emitting layer.

[0020] In an exemplary embodiment, the display device may further include a wavelength conversion pattern and a light-transmitting pattern on the common electrode, and the wavelength conversion pattern or the light-transmitting pattern may overlap the opening of the pixel defining layer in a thickness direction.

[0021] According to another aspect of an embodiment of the present disclosure, a display device includes: a first substrate; a pixel electrode located on the first substrate; a pixel defining layer having an opening that at least partially exposes the pixel electrode; a light-emitting layer located on the pixel electrode; an auxiliary electrode located on the same layer as the pixel electrode; a conductive partition wall located on the auxiliary electrode and including a first metal layer located on the auxiliary electrode and a second metal layer located on the first metal layer; an organic layer located on the conductive partition wall; and a common electrode continuously arranged on the light-emitting layer and the organic layer, wherein an end of the second metal layer protrudes farther than an end of an upper surface of the first metal layer, and wherein the common electrode contacts a side surface of the first metal layer.

[0022] In exemplary embodiments, the auxiliary electrode may be electrically connected to the common electrode.

[0023] In exemplary embodiments, a lower surface of the first metal layer may contact the auxiliary electrode, and an upper surface of the first metal layer may contact the second metal layer.

[0024] In exemplary embodiments, a width of a lower surface of the first metal layer in the first direction may be greater than a width of an upper surface of the first metal layer in the first direction.

[0025] In exemplary embodiments, a thickness of the first metal layer in the third direction may be greater than a thickness of the second metal layer in the third direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other aspects and features of the present disclosure will become more apparent by describing exemplary embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0027] Figure 1 is a perspective view showing a display device according to an exemplary embodiment of the present disclosure;

[0028] Figure 2 yes Figure 1 A plan view of a display device;

[0029] Figure 3 It is along Figure 2 A cross-sectional view taken along line III-III′;

[0030] Figure 4 It is along Figure 2 A sectional view taken along line IV-IV′;

[0031] Figure 5 yes Figure 2 An enlarged cross-sectional view of a light emitting device;

[0032] Figure 6 to Figure 7 It is shown Figure 5 A cross-sectional view of a modified example of the light emitting device;

[0033] Figure 8 is a cross-sectional view showing a compensation portion according to an example embodiment of the present disclosure;

[0034] Fig. 9 is a cross-sectional view showing a compensation portion according to an example embodiment of the present disclosure;

[0035] Fig.10 is a cross-sectional view showing a compensation portion according to an example embodiment of the present disclosure;

[0036] Fig.11 is a cross-sectional view showing a compensating portion according to an example embodiment of the present disclosure; and

[0037] Figures 12 to 18 2 is a cross-sectional view illustrating each process of a method of manufacturing a display device according to an example embodiment of the present disclosure. DETAILED DESCRIPTION

[0038] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings in which exemplary embodiments of the disclosure are shown. However, the present disclosure may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the disclosure to those skilled in the art.

[0039] It will also be understood that when a layer is referred to as being "on," "connected to," or "bonded to" another layer, element, or substrate, the layer, element, or substrate can be directly on the other layer, element, or substrate, or one or more intervening layers may also be present. Additionally, it will be understood that when an element or layer is referred to as being "between" two elements or layers, the element or layer can be the only element or layer between the two elements or layers, or one or more intervening elements or layers may also be present. Throughout the specification, the same reference numerals refer to the same components. In the drawings, the relative sizes of elements, layers, and regions may be exaggerated for clarity.

[0040] It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the spirit and scope of the present disclosure, the first element, first component, first region, first layer or first part discussed below may be referred to as the second element, second component, second region, second layer or second part.

[0041] For ease of explanation, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature to other elements or features as shown in the drawings. It will be understood that the spatially relative terms are intended to include different orientations of the device in use or in operation in addition to the orientation depicted in the drawings. For example, if the device in the drawings is turned over, the elements described as "under" or "below" or "below" other elements or features will then be positioned "above" the other elements or features. Therefore, the example terms "under" and "below" can include both above and below orientations. The device can be positioned otherwise (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0042] The terms used herein are for the purpose of describing specific embodiments and are not intended to be limitations of the present disclosure. Unless the context clearly indicates otherwise, as used herein, the singular form "one (kind / person)" is also intended to include the plural form. It will also be understood that the terms "comprise", "include" and variations thereof are used in this specification to indicate the presence of stated features, integral bodies, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integral bodies, steps, operations, elements, components and / or their groups. As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items.

[0043] As used herein, the terms "substantially", "approximately" and similar terms are used as approximate terms rather than as terms of degree, and are intended to explain the inherent deviations in measurements or calculations that will be recognized by those of ordinary skill in the art. In addition, when describing embodiments of the present disclosure, the use of "may" refers to "one or more embodiments of the present disclosure". In addition, when describing embodiments of the present disclosure, the use of selective language such as "or" refers to "one or more embodiments of the present disclosure" for each corresponding item listed. As used herein, the term "use" and its variations may be considered to be synonymous with the term "utilize" and its variations, respectively. In addition, the term "exemplary" is intended to refer to an example or illustration. In addition, as used herein, a "plan view" or "plan view" may refer to a top-down view or a view viewed from a direction orthogonal to the display surface of the display panel.

[0044] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It will also be understood that terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and / or this specification, and should not be interpreted in an idealized or overly formal sense, unless explicitly defined as such herein.

[0045] Hereinafter, example embodiments of the present disclosure are described with reference to the accompanying drawings.

[0046] Figure 1 is a perspective view showing a display device according to an exemplary embodiment of the present disclosure. Figure 2 yes Figure 1 A plan view of a display device. Figure 3 It is along Figure 2 A cross-sectional view taken along line III-III'. Figure 4 It is along Figure 2 A cross-sectional view taken along line IV-IV'.

[0047] Reference Figure 1 The display device 1 can be applied to various electronic devices, such as small and medium-sized electronic devices (such as tablet personal computers (PCs), smart phones, car navigation units, cameras, central information displays (CIDs) set in vehicles, wristwatch-type electronic devices, personal digital assistants (PDAs), portable multimedia players (PMPs), game consoles, etc.) and large and medium-sized electronic devices (such as televisions, external billboards, monitors, PCs, notebook computers, etc.). The above description is presented only as an example, and optionally, without departing from the concept of the present disclosure, the display device 1 can be applied to other suitable electronic devices.

[0048] The display device 1 may be formed in a rectangular shape when viewed in a plan view. The display device 1 may include two long sides extending in one direction (e.g., a first direction D1) and two short sides extending in another direction (e.g., a second direction D2) intersecting the first direction D1. When viewed in a plan view, the corner where the long side and the short side of the display device 1 meet may be a right angle, but the present disclosure is not limited thereto, and the corner may have, for example, a rounded curved shape. The planar shape of the display device 1 is not limited to Figure 1 , and the display device 1 may have a square shape, a circular shape, an elliptical shape, or any other suitable shape.

[0049] The display device 1 may include a display area DA in which an image is displayed (or configured to display an image) and a non-display area NDA disposed outside the display area DA and in which no image is displayed (or configured not to display an image). The display area DA may be disposed in a central portion of the display device 1, but the present disclosure is not limited thereto. For example, the display area DA may be disposed in an edge area of ​​the display device 1.

[0050] The display device 1 may include a first substrate 10 , a second substrate 30 facing the first substrate 10 , and a sealing member 50 bonding the first substrate 10 to the second substrate 30 at edges (or peripheries) of the first substrate 10 and the second substrate 30 .

[0051] The first substrate 10 may include elements and circuits for displaying images (eg, pixel circuits such as switching elements, pixel defining layers defining light emitting regions and non-light emitting regions of the display area DA, and organic light emitting devices). The first substrate 10 may be a display substrate.

[0052] The second substrate 30 is disposed above the first substrate 10 and faces the first substrate 10. The second substrate 30 may be a color conversion substrate including a color conversion pattern for converting a color of incident light, but the present disclosure is not limited thereto.

[0053] In the non-display area NDA, the sealing member 50 may be disposed between the first substrate 10 and the second substrate 30. When viewed in a plan view, the sealing member 50 may be disposed along the edges (or peripheries) of the first substrate 10 and the second substrate 30 in the non-display area NDA to surround the display area DA. The first substrate 10 may be bonded to the second substrate 30 via the sealing member 50. The sealing member 50 may include an organic material such as an epoxy resin, but the present disclosure is not limited thereto.

[0054] Now refer to Figure 3 A filling layer 70 surrounded by the sealing member 50 may be further disposed in the space between the first substrate 10 and the second substrate 30. The filling layer 70 may fill the space between the first substrate 10 and the second substrate 30. Figure 3 The filling layer 70 is described in further detail.

[0055] Reference Figure 2 , the display area DA of the display device 1 may include a plurality of pixels PX and a compensation part CP.

[0056] The compensation part CP may serve to improve brightness uniformity of the plurality of pixels PX by reducing or minimizing a voltage drop (IR drop) caused by a high resistance of the common electrode 150 , which will be further described below.

[0057] The compensation part CP may be between the plurality of pixels PX (or disposed between the plurality of pixels PX). Figure 2 , the compensation part CP is shown as being disposed between the plurality of pixels PX along the first direction D1, but the arrangement of the plurality of pixels PX and the compensation part CP is not limited thereto. For example, the compensation part CP may be disposed between the plurality of pixels PX along the second direction D2 or may be partially disposed on one side or the other side of the plurality of pixels PX. In addition, the compensation part CP may partially overlap the plurality of pixels PX.

[0058] Reference Figure 3 and Figure 4 The first substrate 10 of the compensation part CP may include a first base 101 , a buffer layer BF, a first insulating layer IL1 , a second insulating layer IL2 , a second conductive layer 120 , a third insulating layer IL3 , a first electrode 130 , a partition wall 163 , an organic layer 143 , and a common electrode 150 .

[0059] Each of the above-mentioned layers may be formed of a single layer, or may also be formed of a stacked layer including a plurality of layers. One or more other layers may be further provided between the above-mentioned layers.

[0060] The first substrate 101 may be made of a material having light transmittance. For example, the first substrate 101 may be a glass substrate or a plastic substrate. When the first substrate 101 is a plastic substrate, the first substrate 101 may be flexible.

[0061] The buffer layer BF is on the first substrate 101 (or disposed on the first substrate 101). The buffer layer BF may be substantially on the entire surface of the first substrate 101 (or disposed on the entire surface of the first substrate 101) (or on the surface of the entire first substrate 101). The buffer layer BF may prevent the diffusion of impurity ions and water infiltration, or reduce the possibility of the diffusion of impurity ions and water infiltration, and may perform a surface flattening function (or may flatten the surface before providing (multiple) additional layers). The buffer layer BF may include silicon nitride, silicon oxide, silicon oxynitride, etc.

[0062] The first insulating layer IL1 is on the buffer layer BF (or disposed on the buffer layer BF). The first insulating layer IL1 may be substantially disposed on the entire surface of the buffer layer BF (or on the surface of the entire buffer layer BF). The first insulating layer IL1 may be a gate insulating layer having a gate insulating function. The first insulating layer IL1 may include silicide, metal oxide, etc. For example, the first insulating layer IL1 may include one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc. The first insulating layer IL1 may be a single layer or a multilayer made of stacked layers of different materials.

[0063] The second insulating layer IL2 is on the first insulating layer IL1 (or is disposed on the first insulating layer IL1). The second insulating layer IL2 may be disposed on (or over) the entire surface of the first substrate 101 (or may be on the entire surface of the first substrate 101). The second insulating layer IL2 is used to insulate the first conductive layer 110 from the second conductive layer 120, which is further described below.

[0064] The second insulating layer IL2 may be an interlayer insulating layer. The second insulating layer IL2 may include the same material as the above-described first insulating layer IL1, or may include one or more materials selected from among the materials exemplified as the constituent materials of the first insulating layer IL1.

[0065] The second conductive layer 120 is on the second insulating layer IL2 (or disposed on the second insulating layer IL2) (for example, see Figure 4 ). The second conductive layer 120 may be a single layer or may have a multi-layer structure. For example, the second conductive layer 120 may be formed in a stacked structure of Ti / Al / Ti, Mo / Al / Mo, Mo / AlGe / Mo, Ti / Cu, etc.

[0066] The second conductive layer 120 may include a compensation electrode 123. The compensation electrode 123 may be electrically connected to a common electrode 150 described further below, and may be used to compensate for a voltage drop of the common electrode 150 to improve brightness uniformity.

[0067] The compensation electrode 123 may be made of a low resistance material in order to reduce a voltage drop due to high resistance caused by a reduction in thickness of the common electrode 150 described further below.

[0068] The compensation electrode 123 may include one or more metals selected from aluminum (Al), molybdenum (Mo), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W) and copper (Cu).

[0069] The third insulating layer IL3 covers the second conductive layer 120. The third insulating layer IL3 may be a via layer. The third insulating layer IL3 may include an organic insulating material such as acrylic resin (polyacrylate resin), epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin and / or benzocyclobutene (BCB).

[0070] The first electrode 130 may be on the third insulating layer IL3 (or disposed on the third insulating layer IL3). The first electrode 130 may include a material having a high work function that facilitates hole injection, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 )wait.

[0071] The first electrode 130 may include an auxiliary electrode 135. The auxiliary electrode 135 may be used to connect a common electrode 150, which is described further below, to the compensation electrode 123.

[0072] The auxiliary electrode 135 may be connected to the compensation electrode 123 through an opening (eg, a contact hole) passing through the third insulating layer IL3. The auxiliary electrode 135 may overlap the compensation electrode 123 in a thickness direction (eg, a third direction D3).

[0073] The partition wall 163 may be on (or disposed on) the first electrode 130 . A lower surface of the partition wall 163 may directly contact an upper surface of the auxiliary electrode 135 , and an upper surface of the partition wall 163 may directly contact a lower surface of the organic layer 143 .

[0074] The cross-sectional shape of the partition wall 163 may have an inverted cone shape (or a trapezoidal shape), that is, the partition wall 163 has an inverted cone shape with the top end truncated. For example, the side surface of the partition wall 163 may have an inverted cone shape, that is, the side surface of the partition wall 163 may be a part of the side surface of the inverted cone shape. The first taper angle θ1 between the side surface of the partition wall 163 and the upper surface of the auxiliary electrode 135 may be in the range of from about 100° to about 150°. Alternatively, the first taper angle θ1 may be in the range of from about 110° to about 130°, but the present disclosure is not limited thereto.

[0075] The width of the upper surface of the partition wall 163 (e.g., the width along the first direction D1) may be greater than the width of the lower surface of the partition wall 163. The lower surface of the partition wall 163 may be defined as a surface contacting the auxiliary electrode 135, and the upper surface of the partition wall 163 may be defined as a surface opposite to the lower surface of the partition wall 163.

[0076] The width of the lower surface (e.g., along the first direction D1) of the partition wall 163 may be smaller than the width of the upper surface of the auxiliary electrode 135. In addition, the width of the upper surface of the partition wall 163 may be greater than the width of the upper surface of the auxiliary electrode 135. As such, the side surface of the auxiliary electrode 135 may be exposed due to the lower surface of the partition wall 163 and covered by the upper surface of the partition wall 163 (e.g., may be covered by the upper surface of the partition wall 163 in a plan view).

[0077] Specifically, the lower surface of the partition wall 163 may expose both the first side surface 135a disposed on one side (e.g., the first side) of the upper surface of the auxiliary electrode 135 and the second side surface 135b disposed on the other side (e.g., the second side) of the upper surface of the auxiliary electrode 135. The first side surface 135a and the second side surface 135b of the auxiliary electrode 135 exposed due to the partition wall 163 may be in direct contact with the common electrode 150 further described below. Therefore, a voltage drop due to a reduction in the thickness of the common electrode 150 may be reduced or minimized.

[0078] In addition, the first side surface 135a and the second side surface 135b of the auxiliary electrode 135 may overlap with the upper surface of the partition wall 163 in the thickness direction (e.g., the third direction D3) so as to be covered by the upper surface of the partition wall 163. Therefore, even when the organic layer 143 or the light emitting layer 141 is formed on the first substrate 101, the organic layer 143 or the light emitting layer 141 is not disposed on the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. Therefore, it is possible to ensure contact between the first side surface 135a and the second side surface 135b of the auxiliary electrode 135 and the common electrode 150 described further below.

[0079] The partition wall 163 may be made of an inorganic material. The inorganic material may include silicon oxide (SiO x ), silicon nitride (SiN x ) and / or silicon oxynitride (SiO x N y ).

[0080] The partition wall 163 may include the same material as the pixel defining layer 161 described further below. In addition, the partition wall 163 may be formed simultaneously (or synchronously) with the pixel defining layer 161 described further below.

[0081] The organic layer 143 may be on (or disposed on) the partition wall 163 . A lower surface of the organic layer 143 may be in direct contact with an upper surface of the partition wall 163 , and an upper surface of the organic layer 143 may be in direct contact with the common electrode 150 .

[0082] The organic layer 143 may include a light-emitting material, but may be a non-light-emitting layer in which light emission does not substantially occur. The organic layer 143 and the light-emitting layer 141 described further below may include the same material and may have the same stacking structure. The organic layer 143 may include a hole transport layer, a light-emitting material layer, an electron transport layer, etc. In addition, the organic layer 143 may be formed simultaneously (or synchronously) with the light-emitting layer 141, as described below with reference to Figures 4 to 7 Further described.

[0083] Generally, the material used as the organic layer 143 may have a low step coverage. Therefore, when the partition wall 163 is formed in an inverted tapered shape, the organic layer 143 may be only partially disposed on the upper surface of the partition wall 163, and may not be disposed on the side surface of the partition wall 163. For example, the organic layer 143 may not contact the side surface of the partition wall 163.

[0084] In addition, as described above, the first side surface 135a and the second side surface 135b of the auxiliary electrode 135 may overlap with the upper surface of the partition wall 163 in the thickness direction, so as to be covered by the upper surface of the partition wall 163. Therefore, the organic layer 143 may not be substantially disposed on the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. For example, the organic layer 143 may not be in contact with the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. Therefore, as described above, the contact between the first side surface 135a and the second side surface 135b of the auxiliary electrode 135 and the common electrode 150 as further described below can be ensured.

[0085] The organic layer 143 is a common layer formed simultaneously (or synchronously) with the light emitting layer 141. However, the organic layer 143 is spaced apart from the light emitting layer 141 due to a step caused by the partition wall 163, so that the organic layer 143 may not contact the light emitting layer 141.

[0086] The common electrode 150 may be on the organic layer 143 (or disposed on the organic layer 143). The common electrode 150 may be a common layer formed on the first substrate 101. The lower surface of the common electrode 150 may be in direct contact with the organic layer 143, the side surface of the partition wall 163, and the auxiliary electrode 135, and the upper surface of the common electrode 150 may be in direct contact with the first inorganic encapsulation layer 171.

[0087] The common electrode 150 may have semi-transmittance or transmittance. The common electrode 150 may include a material having a low work function for easy electron injection, for example, Li, Ca, LiF / Ca, LiF / Al, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF 2 , Ba or their compounds or mixtures (e.g., a mixture of Ag and Mg). The common electrode 150 may also include a transparent conductive oxide disposed on a material layer having a low work function. For example, the common electrode 150 may include a transparent conductive oxide such as ITO, IZO, indium tin zinc oxide (ITZO), ZnO, tin oxide, etc.

[0088] In order to increase the transmittance of the common electrode 150, the common electrode 150 may be formed with a relatively small (or very thin) thickness. Due to the reduction in the thickness of the common electrode 150, the resistance of the common electrode 150 may increase, thereby causing a voltage drop in the display device 1. For example, the brightness of the central portion of the display device 1 may deteriorate, and as the display device 1 has a large area, the phenomenon of voltage drop may be serious. Therefore, in the display device 1 according to an embodiment of the present disclosure, the common electrode 150 is electrically connected to the compensation electrode 123, so that the voltage drop caused by the reduction in the thickness of the common electrode 150 can be minimized or reduced.

[0089] Specifically, since the common electrode 150 has a higher step coverage than the organic layer 143, even when the partition wall 163 is formed in an inverted tapered shape, the common electrode 150 may be deposited on one surface of the structure below the partition wall 163. For example, the common electrode 150 may be provided to cover one surface of each of the auxiliary electrode 135, the partition wall 163, and the organic layer 143. That is, the common electrode 150 may be connected on the auxiliary electrode 135, the partition wall 163, and the organic layer 143 without being disconnected.

[0090] The common electrode 150 may be disposed on the side surface of the partition wall 163. That is, the common electrode 150 may be in direct contact with the side surface of the partition wall 163. In addition, the common electrode 150 may be disposed on the first side surface 135a and the second side surface 135b of the auxiliary electrode 135 exposed due to the partition wall 163. That is, the common electrode 150 may be in direct contact with the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. The common electrode 150 may be electrically connected to the compensation electrode 123 through the auxiliary electrode 135. Therefore, even when the thickness of the common electrode 150 is formed to be small (or thin), the voltage drop may be reduced or minimized due to the compensation electrode 123, so that the degradation of the brightness of the display device 1 may be prevented, or the possibility of degradation of the brightness of the display device 1 may be reduced.

[0091] The thin film encapsulation layer 170 is on the common electrode 150 (or disposed on the common electrode 150). The thin film encapsulation layer 170 may be a common layer formed on the common electrode 150. The thin film encapsulation layer 170 may directly cover the common electrode 150. The thin film encapsulation layer 170 may include a first inorganic encapsulation layer 171, an organic encapsulation layer 172, and a second inorganic encapsulation layer 173 sequentially stacked on the common electrode 150.

[0092] Each of the first inorganic encapsulating layer 171 and the second inorganic encapsulating layer 173 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiO x Ny ), lithium fluoride, etc.

[0093] The organic encapsulation layer 172 may be made of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or the like.

[0094] However, the structure of the thin film encapsulation layer 170 is not limited to the above example, and the stack structure of the thin film encapsulation layer 170 may be variously modified.

[0095] The second substrate 30 may be disposed over the first substrate 10 .

[0096] The second substrate 30 may include a second base 301 , a light blocking layer 390 , a first cover layer PS1 , and a second cover layer PS2 .

[0097] The second substrate 301 may be made of a material having light transmittance. The second substrate 301 may include a glass substrate or a plastic substrate. The second substrate 301 may also include a separate layer disposed on the glass substrate or the plastic substrate, for example, an insulating layer such as an inorganic layer.

[0098] The light blocking layer 390 may be on one surface of the second base 301 facing the first substrate 10 (or disposed on one surface of the second base 301 facing the first substrate 10), for example, on the lower surface of the second base 301. The light blocking layer 390 may include an organic light blocking material and may be formed by a process of coating and exposing the organic light blocking material. The light blocking layer 390 may absorb external light to prevent the structure of the compensation part CP disposed below the light blocking layer 390 from being viewed from the outside, or may reduce the possibility that the structure of the compensation part CP below the light blocking layer 390 is visible to the outside.

[0099] The first cover layer PS1 may be on the second substrate 301 and the light blocking layer 390 (or disposed on the second substrate 301 and the light blocking layer 390). The first cover layer PS1 may be made of an inorganic material. For example, the first cover layer PS1 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, SiO x N y wait.

[0100] The second cap layer PS2 may be on the first cap layer PS1 (or disposed on the first cap layer PS1). The second cap layer PS2 may be made of an inorganic material. The second cap layer PS2 may be made of the same material as the first cap layer PS1, or may include at least one of the materials exemplified as the constituent materials of the first cap layer PS1.

[0101] The filling layer 70 may be between the second cover layer PS2 of the second substrate 30 and the thin film encapsulation layer 170 of the first substrate 10 (or disposed between the second cover layer PS2 of the second substrate 30 and the thin film encapsulation layer 170 of the first substrate 10). The filling layer 70 may be in direct contact with the second cover layer PS2. The filling layer 70 may be made of a material capable of transmitting light. The filling layer 70 may be made of an organic material. Examples of organic materials may include silicon-based organic materials and epoxy-based organic materials, but the present disclosure is not limited thereto. Optionally, in some embodiments, the filling layer 70 may be omitted.

[0102] As described above, the compensation electrode 123 of the compensation part CP may be electrically connected to the common electrode 150. Therefore, even when the thickness of the common electrode 150 is reduced and thus the resistance is increased, the voltage drop due to the compensation electrode 123 may be minimized or reduced, so that the degradation of the brightness of the display device 1 may be prevented or the possibility of degradation of the brightness of the display device 1 may be reduced.

[0103] Hereinafter, the pixel PX is described in further detail.

[0104] Refer again Figure 2 , a plurality of pixels PX may be arranged in the first direction D1 or in the second direction D2.

[0105] Each of the pixels PX may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3.

[0106] The first subpixel SP1 may emit a first emission light L1 having a first color, the second subpixel SP2 may emit a second emission light L2 having a second color, and the third subpixel SP3 may emit a third emission light L3 having a third color. For example, the first emission light L1 having the first color may be red light having a peak wavelength in the range of about 610 nm to about 650 nm, the second emission light L2 having the second color may be green light having a peak wavelength in the range of about 510 nm to about 550 nm, and the third emission light L3 having the third color may be blue light having a peak wavelength in the range of about 430 nm to about 470 nm.

[0107] The first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 may be arranged alternately in the row direction and the column direction. Optionally, the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 may be arranged in a stripe (also referred to as a stripe), but the present disclosure is not limited thereto, and the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 may be arranged in a cluster of five pixels such as two first sub-pixels SP1, two second sub-pixels SP2, and a central third sub-pixel SP3. ( is a registered trademark of Samsung Display Co., Ltd.) in various ways (for example, in a plum blossom shape, etc.).

[0108] Reference Figure 4 , the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 may include light transmission areas PA1, PA2, and PA3 corresponding to the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, respectively, and a light blocking area PB. The light transmission areas PA1, PA2, and PA3 may be areas in which light emitted from the first substrate 10 passes through the second substrate 30 to travel to the outside of the display device 1. The light blocking area PB may be an area in which light emitted from the first substrate 10 is not transmitted. The light blocking area PB may be disposed to surround the light transmission areas PA1, PA2, and PA3. The light transmission areas PA1, PA2, and PA3 and the light blocking area PB may be distinguished by a light blocking layer 390 further described below. The light transmission areas PA1, PA2, and PA3 and the light blocking area PB may be defined on the second substrate 30.

[0109] In addition, the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 may include light-emitting regions corresponding to the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, respectively. The light-emitting region may be a region that emits light due to the light-emitting layer 141 described further below. The non-light-emitting region may be arranged around the light-emitting region. For example, the non-light-emitting region may be arranged to surround the light-emitting region. The light-emitting region and the non-light-emitting region may be distinguished by the pixel defining layer 161 described further below. All types of light L emitted from the light-emitting region may have the same peak wavelength and may be converted into corresponding emission colors of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 by the wavelength conversion patterns 341 and 343, the light-transmitting pattern 345, and / or the color filter layer 330 described further below, which are arranged in the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3.

[0110] The first substrate 10 of the pixel PX may include a first base 101, a buffer layer BF, a semiconductor layer ACT, a first insulating layer IL1, a first conductive layer 110, a second insulating layer IL2, a second conductive layer 120, a third insulating layer IL3, a pixel defining layer 161, and light emitting devices ED1, ED2, and ED3. Each of the above layers may be formed of a single layer or may also be formed of a plurality of layers, for example, may have a stacked structure. Another layer may be further disposed between the above layers. Referring to Figure 3 The first base 101 , the buffer layer BF, the second insulating layer IL2 , and the third insulating layer IL3 are described, and thus a repeated description thereof may be omitted.

[0111] The semiconductor layer ACT may be disposed between the buffer layer BF and the first insulating layer IL1. The semiconductor layer ACT may form channels of a plurality of transistors of the pixel PX. The semiconductor layer ACT may include polycrystalline silicon. The polycrystalline silicon may be formed by crystallizing amorphous silicon.

[0112] When the semiconductor layer ACT is made of polysilicon and doped with ions, the ion-doped semiconductor layer ACT may have conductivity. Therefore, the semiconductor layer ACT may include not only the channel regions of the plurality of transistors, but also the source and drain regions of the plurality of transistors. The source and drain regions may be connected to both sides of each of the channel regions.

[0113] In another embodiment, the semiconductor layer ACT may include single crystal silicon, low temperature polycrystalline silicon, amorphous silicon and / or an oxide semiconductor. For example, the oxide semiconductor may include a binary compound (AB) containing indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. x ), ternary compounds (AB x C y ) or quaternary compound (AB x C y D z In an embodiment, the semiconductor layer ACT may include ITZO (which is an oxide including indium, tin, and zinc) or indium gallium zinc oxide (IGZO) (which is an oxide including indium, gallium, and zinc).

[0114] The first conductive layer 110 may be disposed between the first insulating layer IL1 and the second insulating layer IL2. The first conductive layer 110 may include one or more metals selected from Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Ti, Ta, W, and Cu. The first conductive layer 110 may be a single layer or may have a multilayer structure. The first conductive layer 110 may include a gate electrode of a transistor and a first electrode of a storage capacitor.

[0115] The second conductive layer 120 may be disposed between the second insulating layer IL2 and the third insulating layer IL3. The second conductive layer 120 may include not only the compensation electrode 123 described above, but also a source electrode 121 and a drain electrode 122 of the transistor. The source electrode 121 and the drain electrode 122 may be connected to the source region and the drain region of the semiconductor layer ACT, respectively, through an opening (e.g., a contact hole) passing through the second insulating layer IL2 and the first insulating layer IL1.

[0116] The first electrode 130 may be disposed on the third insulating layer IL3. The first electrode 130 may include not only the above-mentioned auxiliary electrode 135, but also a first pixel electrode 131, a second pixel electrode 132, and a third pixel electrode 133. The first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133 may be disposed in the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, respectively. Each of the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133 may be connected to the source electrode 121 or the drain electrode 122 through an opening (e.g., a contact hole) passing through the third insulating layer IL3.

[0117] The pixel defining layer 161 may be on the first electrode 130 (or disposed on the first electrode 130). The pixel defining layer 161 is disposed along the boundary of each of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3. The pixel defining layer 161 may include an opening partially exposing the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133. The pixel defining layer 161 may be disposed to expose the central portion of the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133 and to cover the side surfaces of the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133.

[0118] The opening of the pixel defining layer 161 may define light emitting regions of the first sub-pixel SP1 , the second sub-pixel SP2 , and the third sub-pixel SP3 .

[0119] The pixel defining layer 161 may include the same material as the partition wall 163 described above. For example, the pixel defining layer 161 may be made of an inorganic material. The inorganic material may include SiO x 、SiN x or SiO x N y According to an embodiment, the pixel defining layer 161 may serve to block exhaust gas generated from an adjacent layer from being introduced into the light emitting layer 141 .

[0120] For example, when the third insulating layer IL3 is formed of an organic material, exhaust gas is generated from the third insulating layer IL3 and introduced into the light emitting layer 141, thereby causing degradation of the light emitting device. Therefore, when the pixel defining layer 161 disposed on the third insulating layer IL3 is formed of an inorganic material, it is possible to effectively prevent the element from being degraded due to exhaust gas, or reduce the possibility of degradation due to exhaust gas.

[0121] Unlike the partition wall 163, the cross-sectional shape of the pixel defining layer 161 may have a positive tapered shape. That is, the side surface of the pixel defining layer 161 may have a positive tapered shape. A second tapered angle θ2 between the side surface of the pixel defining layer 161 and the upper surface of each of the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133 may be smaller than a first tapered angle θ1 between the side surface of the partition wall 163 and the upper surface of the auxiliary electrode 135.

[0122] The pixel defining layer 161 may at least partially overlap the light blocking layer 390 and / or the partition wall 370 in the thickness direction (eg, the third direction D3). An additional description thereof is provided below.

[0123] The light emitting layer 141 may be disposed on the first electrode 130 and the pixel defining layer 161. The light emitting layer 141 may have a shape of a continuous layer formed over the first electrode 130 and the pixel defining layer 161. The light emitting layer 141 may be disposed on the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133 exposed (e.g., at least partially exposed) by the opening of the pixel defining layer 161 to contact the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133.

[0124] Reference Figures 5 to 7 The light emitting layer 141 is described in further detail.

[0125] Figure 5 yes Figure 2 An enlarged cross-sectional view of a light emitting device. Figure 6 and Figure 7 It is shown Figure 5 sectional view of a modified example of the light emitting device.

[0126] Reference Figure 5 , the light emitting layer 141 may have a structure in which a plurality of layers are stacked. For example, the light emitting layer 141 may include a first hole transport layer HTL1, a first light emitting material layer EL11, and a first electron transport layer ETL1. The first hole transport layer HTL1 may be disposed on the first pixel electrode 131, the first light emitting material layer EL11 may be disposed on the first hole transport layer HTL1, and the first electron transport layer ETL1 may be disposed on the first light emitting material layer EL11. The first light emitting material layer EL11 may emit blue light, but the present disclosure is not limited thereto.

[0127] In addition, if Figure 6 As shown in , the light emitting layer 141 may further include a first charge generation layer CGL11 and a second light emitting material layer EL12. The first charge generation layer CGL11 may be disposed on the first light emitting material layer EL11, and the second light emitting material layer EL12 may be disposed on the first charge generation layer CGL11.

[0128] The first charge generation layer CGL11 may be used to inject charges into adjacent light emitting material layers EL11 and EL12, and to adjust the charge balance between the first light emitting material layer EL11 and the second light emitting material layer EL12. The first charge generation layer CGL11 may include an n-type charge generation layer and a p-type charge generation layer. The p-type charge generation layer may be disposed on the n-type charge generation layer.

[0129] The second light-emitting material layer EL12 may emit light of the same color as the light of the color of the first light-emitting material layer EL11. For example, the second light-emitting material layer EL12 may emit blue light having the same peak wavelength as the first light-emitting material layer EL11, or may emit blue light having a peak wavelength different from the peak wavelength of the first light-emitting material layer EL11. However, the present disclosure is not limited thereto, and the second light-emitting material layer EL12 may emit light of a color different from the light of the color of the first light-emitting material layer EL11. For example, the second light-emitting material layer EL12 may emit green light, and the first light-emitting material layer EL11 may emit blue light. Figure 5 Compared with the embodiment shown in Figure 6 In the embodiment shown in , the light emitting layer 141 includes two light emitting material layers EL11 and EL12, so that the light emitting efficiency and life span can be improved.

[0130] In addition, if Figure 7 As shown in , the light emitting layer 141 may further include a second charge generation layer CGL12 and a third light emitting material layer EL13. The second charge generation layer CGL12 may be disposed on the second light emitting material layer EL12, and the third light emitting material layer EL13 may be disposed on the second charge generation layer CGL12.

[0131] The third light-emitting material layer EL13 may emit light of the same color as the light of the color of the first light-emitting material layer EL11 and / or the second light-emitting material layer EL12. For example, the third light-emitting material layer EL13 may emit blue light having the same peak wavelength as the peak wavelength of the first light-emitting material layer EL11 and / or the second light-emitting material layer EL12, or may emit blue light having a peak wavelength different from the peak wavelength of the first light-emitting material layer EL11 and / or the second light-emitting material layer EL12. However, the present disclosure is not limited thereto, and the third light-emitting material layer EL13 may emit light of a color different from the color of the light of the first light-emitting material layer EL11 and / or the second light-emitting material layer EL12. For example, each of the first light-emitting material layer EL11, the second light-emitting material layer EL12 and the third light-emitting material layer EL13 can emit blue light or green light, or the first light-emitting material layer EL11, the second light-emitting material layer EL12 and the third light-emitting material layer EL13 can emit red light, green light and blue light, so that the light-emitting material layers EL11, EL12 and EL13 as a whole can emit white light (or the first light-emitting material layer EL11, the second light-emitting material layer EL12 and the third light-emitting material layer EL13 emit white light together).

[0132] Refer again Figure 4 , the common electrode 150 may be disposed on the light emitting layer 141. The common electrode 150 may be a common layer formed on the light emitting layer 141.

[0133] The first pixel electrode 131, the light emitting layer 141, and the common electrode 150 may constitute a first light emitting device ED1, the second pixel electrode 132, the light emitting layer 141, and the common electrode 150 may constitute a second light emitting device ED2, and the third pixel electrode 133, the light emitting layer 141, and the common electrode 150 may constitute a third light emitting device ED3. Light L emitted from the first light emitting device ED1, the second light emitting device ED2, and the third light emitting device ED3 may be provided to the second substrate 30.

[0134] The thin film encapsulation layer 170 is on the common electrode 150 (or disposed on the common electrode 150). Figure 3 The thin film encapsulation layer 170 is described, and thus a repeated description thereof may be omitted.

[0135] The panel light blocking layer 180 may be on the thin film encapsulation layer 170 (or disposed on the thin film encapsulation layer 170). The panel light blocking layer 180 may be disposed to overlap with the non-light emitting region (e.g., the pixel defining layer 161). The panel light blocking layer 180 may prevent color mixing due to light intrusion between adjacent light emitting regions or reduce the possibility of color mixing, so that color reproducibility may be further improved. The panel light blocking layer 180 may include an organic light blocking material and may be formed by a process of coating and exposing the organic light blocking material.

[0136] The second substrate 30 may be disposed over the panel light blocking layer 180 of the first substrate 10 .

[0137] The second substrate 30 may include a second base 301, a light blocking layer 390, a color filter layer 330, a partition wall 370, wavelength conversion patterns 341 and 343, a light-transmitting pattern 345, a first cover layer PS1, and a second cover layer PS2. Figure 3 The second base body 301 , the first cover layer PS1 , and the second cover layer PS2 are described, and thus a repeated description thereof may be omitted.

[0138] The light blocking layer 390 is on the second substrate 301 (or is disposed on the second substrate 301). The light blocking layer 390 may be disposed to overlap with the light blocking region PB along the boundaries of the plurality of light transmission regions PA1, PA2, and PA3. The light blocking layer 390 may overlap with the partition wall 370 described further below in the thickness direction (e.g., the third direction D3). The light blocking layer 390 may absorb external light to reduce color distortion caused by reflection of external light. In addition, the light blocking layer 390 may prevent color mixing caused by light intrusion between adjacent light transmission regions PA1, PA2, and PA3 or reduce the possibility of color mixing, so that color reproducibility may be further improved.

[0139] The color filter layer 330 may be disposed between the light blocking layer 390 and the first cover layer PS1. The color filter layer 330 may include a first color filter 331, a second color filter 332, and a third color filter 333. The first color filter 331, the second color filter 332, and the third color filter 333 may be disposed to overlap with the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, respectively. In addition, the first color filter 331, the second color filter 332, and the third color filter 333 may be disposed to overlap with the light transmission areas PA1, PA2, and PA3 of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, respectively. In addition, the boundary between the first color filter 331, the second color filter 332, and the third color filter 333 may be located in the light blocking area PB.

[0140] Each of the first color filter 331, the second color filter 332, and the third color filter 333 can selectively transmit light of a specific color and absorb light of a color different from the specific color, thereby preventing light of a different color from traveling therethrough or reducing the possibility of light of a different color traveling therethrough.

[0141] For example, the first color filter 331 can selectively transmit light of a first color (e.g., red light) and block or absorb light of a second color (e.g., green light) and light of a third color (e.g., blue light). The first color filter 331 can be a red color filter and can include a red colorant such as a red dye or a red pigment. In the present disclosure, a colorant can be understood as a concept including both a dye and a pigment.

[0142] In addition, the second color filter 332 can selectively transmit the second color light (e.g., green light) and block or absorb the first color light (e.g., red light) and the third color light (e.g., blue light). The second color filter 332 can be a green color filter and can include a green colorant such as a green dye or a green pigment.

[0143] In addition, the third color filter 333 can selectively transmit light of a third color (e.g., blue light) and block or absorb light of a first color (e.g., red light) and light of a second color (e.g., green light). The third color filter 333 can be a blue color filter and can include a blue colorant such as a blue dye or a blue pigment.

[0144] The color filter layer 330 may be in direct contact with the first cover layer PS1. The first cover layer PS1 may prevent impurities (such as moisture or air infiltrated from the outside) from damaging or contaminating the color filter layer 330, or may reduce the possibility that impurities (such as moisture or air infiltrated from the outside) damage or contaminate the color filter layer 330. In addition, the first cover layer PS1 may prevent the colorant included in the color filter layer 330 from diffusing to another configuration, or may reduce the possibility that the colorant included in the color filter layer 330 diffusing to another configuration.

[0145] The partition wall 370 may be disposed between the first cover layer PS1 and the second cover layer PS2. The partition wall 370 may be disposed to overlap the light blocking region PB along the boundaries of the plurality of light transmission regions PA1, PA2, and PA3. The partition wall 370 may include an opening of an area overlapping the light transmission regions PA1, PA2, and PA3 that exposes one surface of the first cover layer PS1. The wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 described further below may be disposed in the opening of the partition wall 370. The partition wall 370 may be used as a guide for stably positioning the ink composition for forming the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 at a desired position.

[0146] The partition wall 370 may be made of an organic material, for example, a photosensitive organic material. The photosensitive organic material may be a negative photosensitive material in which curing occurs in the light irradiation portion, but the present disclosure is not limited thereto. The partition wall 370 may also include a light blocking material. According to an embodiment, the partition wall 370 may be arranged to overlap with the light blocking region PB to block light transmission.

[0147] The wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 may be disposed in the opening of the partition wall 370. The wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 may be disposed at substantially the same level (or may have the same or substantially the same height along the third direction D3).

[0148] The wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 may be disposed in the opening of the partition wall 370. Therefore, the upper surfaces of the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 may contact the first cover layer PS1, and the side surfaces of the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 may contact the partition wall 370. The wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 may be formed in an inkjet manner using an ink composition. However, the present disclosure is not limited thereto, and the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 may be formed by applying a photosensitive material and exposing and developing the photosensitive material.

[0149] The wavelength conversion patterns 341 and 343 may convert a peak wavelength of incident light into a specific peak wavelength to emit light having the specific peak wavelength. The wavelength conversion patterns 341 and 343 may include a first wavelength conversion pattern 341 and a second wavelength conversion pattern 343 .

[0150] The first wavelength conversion pattern 341 may be disposed to overlap the light transmission area PA1 (hereinafter also referred to as the first light transmission area PA1) of the first sub-pixel SP1, and may not be disposed in the light transmission areas PA2 and PA3 of the second and third sub-pixels SP2 and SP3. That is, the first wavelength conversion pattern 341 may not overlap the second and third sub-pixels SP2 and SP3.

[0151] The first wavelength conversion pattern 341 may convert blue light into red light in a range from about 610 nm to about 650 nm to emit red light. A thickness of the first wavelength conversion pattern 341 may be in a range from about 3 μm to about 15 μm.

[0152] The first wavelength conversion pattern 341 may include a first base resin 341 a and a first wavelength conversion material 341 b and / or a first scatterer 341 c distributed in the first base resin 341 a .

[0153] As long as the first base resin 341a is a material having high light transmittance and excellent distribution properties for the first wavelength conversion material 341b and the first scatterer 341c, the first base resin 341a is not particularly limited. For example, the first base resin 341a may be made of an organic material having high light transmittance. Examples of organic materials may include one or more of epoxy resins, acrylic resins, cardo resins, and imide resins.

[0154] The first wavelength conversion material 341b may convert the peak wavelength of the incident light into a specific peak wavelength. Examples of the first wavelength conversion material 341b include quantum dots, quantum rods, and phosphors. Quantum dots may be particle substances that emit light of a specific wavelength when electrons transition from a conduction band to a valence band.

[0155] The quantum dot may be a semiconductor nanocrystalline material. The quantum dot may have a specific band gap according to the composition and size, and absorbs light to emit light with an inherent wavelength. Examples of semiconductor nanocrystalline materials of the quantum dot may include nanocrystalline materials based on group IV, nanocrystalline compounds based on group II-VI, nanocrystalline compounds based on group III-V, nanocrystalline compounds based on group IV-VI, or combinations thereof.

[0156] Examples of the Group IV-based nanocrystalline material may include silicon (Si), germanium (Ge), or a binary compound such as silicon carbide (SiC), silicon-germanium (SiGe), etc., but the present disclosure is not limited thereto.

[0157] In addition, examples of II-VI group-based nanocrystalline compounds may include binary compounds (such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof), ternary compounds (such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZ nTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof) or quaternary compounds (such as HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof), but the present disclosure is not limited thereto.

[0158] In addition, examples of III-V group-based nanocrystalline compounds may include binary compounds (such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof), ternary compounds (such as GaNPs, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InNPs, InNAs, InNSb, InPAs, InPSb and mixtures thereof) or quaternary compounds (such as GaAlNAs, GaAlNSb, GaAlNP, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof), but the present disclosure is not limited thereto.

[0159] Examples of nanocrystalline compounds based on Group IV-VI may include binary compounds (such as SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof), ternary compounds (such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof) or quaternary compounds (such as SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof), but the present disclosure is not limited thereto.

[0160] The quantum dot may have a core-shell structure including a core having the above-mentioned nanocrystal and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer for preventing chemical modification of the core to maintain semiconductor properties and / or as a charged layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0161] Examples of metal or non-metal oxides may include binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4and NiO) or ternary compounds (such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 and CoMn 2 O 4 ), but the present disclosure is not limited thereto.

[0162] In addition, examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, and AlSb, but the present disclosure is not limited thereto.

[0163] The light emitted from the first wavelength conversion material 341b may have a full width at half maximum (FWHM) of about 45 nm or less, or about 40 nm or less, or about 30 nm or less, relative to the light emission wavelength spectrum. Therefore, the color purity and color reproducibility of the color displayed by the display device 1 may be improved. In addition, the light emitted from the first wavelength conversion material 341b may be irradiated in various directions regardless of the incident direction of the incident light. Therefore, the visibility of the side surface of the display device 1 may be improved.

[0164] A certain amount of light L emitted from the first light emitting device ED1 may pass through the first wavelength conversion pattern 341 to be emitted without being converted into red light by the first wavelength conversion material 341b. A component of the light L that is not converted by the first wavelength conversion pattern 341 and is incident on the first color filter 331 may be blocked by the first color filter 331. On the other hand, the red light converted by the first wavelength conversion pattern 341 may pass through the first color filter 331 and be emitted to the outside. Therefore, the first emission light L1 emitted to the outside from the first light transmitting area PA1 may be red light.

[0165] The first scatterer 341c may have a refractive index different from that of the first matrix resin 341a and form an optical interface with the first matrix resin 341a. For example, the first scatterer 341c may be light scattering particles. As long as the first scatterer 341c is a material capable of scattering at least a certain amount of transmitted light, the first scatterer 341c is not particularly limited. For example, the first scatterer 341c may be particles of a metal oxide or an organic granular material. Examples of metal oxides may include titanium dioxide (TiO 2 )、ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3), zinc oxide (ZnO) and tin oxide (SnO 2 ), examples of the organic particle material may include acrylic resin and urethane resin. The first scatterer 341c may scatter the light passing through the first wavelength conversion pattern 341 in random directions regardless of the incident direction of the incident light and substantially without converting the wavelength of the light. Therefore, the path length of the light passing through the first wavelength conversion pattern 341 may be increased, and the color conversion efficiency of the first wavelength conversion material 341b may be increased.

[0166] The second wavelength conversion pattern 343 may be disposed to overlap the second light transmission area PA2 of the second sub-pixel SP2, and may not be disposed in the first light transmission area PA1 of the first sub-pixel SP1 and the third light transmission area PA3 of the third sub-pixel SP3. That is, the second wavelength conversion pattern 343 may not overlap the first light transmission area PA1 and the third light transmission area PA3.

[0167] The second wavelength conversion pattern 343 may convert blue light into green light in a range from about 510 nm to about 550 nm to emit green light.

[0168] The second wavelength conversion pattern 343 may include a second base resin 343 a and a second wavelength conversion material 343 b and / or a second scatterer 343 c distributed in the second base resin 343 a .

[0169] As long as the second matrix resin 343a is a material having high light transmittance and excellent distribution properties for the second wavelength conversion material 343b and the second scatterer 343c, the second matrix resin 343a is not particularly limited. For example, the second matrix resin 343a may include the same material as the first matrix resin 341a described above, or may include one or more materials selected from the materials exemplified as the constituent materials of the first matrix resin 341a.

[0170] The second wavelength conversion material 343b may convert the peak wavelength of the incident light into a specific peak wavelength. The second wavelength conversion material 343b may convert blue light having a peak wavelength in the range of about 430 nm to about 470 nm into green light having a peak wavelength in the range of about 510 nm to about 550 nm.

[0171] Examples of the second wavelength conversion material 343b include quantum dots, quantum rods, and / or phosphors. When both the second wavelength conversion material 343b and the first wavelength conversion material 341b are made of quantum dots, the diameter of the quantum dots constituting the first wavelength conversion material 341b may be larger than the diameter of the quantum dots constituting the second wavelength conversion material 343b. For example, the size of the quantum dots of the first wavelength conversion material 341b may be in the range from about to In addition, the size of the quantum dots of the second wavelength conversion material 343b can be in the range of about to about within the range.

[0172] A certain amount of light L provided from the second light emitting device ED2 may pass through the second wavelength conversion pattern 343 to be emitted without being converted into green light by the second wavelength conversion material 343b. The component of the light L that is not converted by the second wavelength conversion pattern 343 and is incident on the second color filter 332 may be blocked by the second color filter 332. On the other hand, the green light converted by the second wavelength conversion pattern 343 may pass through the second color filter 332 and be emitted to the outside. Therefore, the second emission light L2 emitted to the outside from the second light transmission area PA2 may be green light. In addition to the above description, the second wavelength conversion material 343b may be substantially the same as or similar to the above-described first wavelength conversion material 341b, and thus a repeated description thereof may be omitted.

[0173] The second scatterer 343c may have a refractive index different from that of the second matrix resin 343a, and may form an optical interface with the second matrix resin 343a. For example, the second scatterer 343c may be light scattering particles. In addition to the above description, the second scatterer 343c may be substantially the same or similar to the above-described first scatterer 341c, and thus a repeated description thereof may be omitted.

[0174] The light-transmitting pattern 345 may be disposed to overlap the third light-transmitting area PA3 of the third sub-pixel SP3. In addition, the light-transmitting pattern 345 may not be disposed in the light-transmitting areas PA1 and PA2 of the first sub-pixel SP1 and the second sub-pixel SP2. That is, the light-transmitting pattern 345 may not overlap the first sub-pixel SP1 and the second sub-pixel SP2.

[0175] The light-transmitting pattern 345 may transmit light L provided from the third light emitting device ED3 to provide the light L to the third color filter 333. That is, the light provided to the third color filter 333 may be blue light and may have the same wavelength as the light L emitted from the third light emitting device ED3.

[0176] The light-transmitting pattern 345 may include a third base resin 345 a and a third scatterer 345 b distributed in the third base resin 345 a .

[0177] As long as the third matrix resin 345a is a material having high light transmittance and excellent distribution properties for the third scatterer 345b, the third matrix resin 345a is not particularly limited. For example, the third matrix resin 345a may be formed of the same material as the first matrix resin 341a described above, or may include one or more materials selected from the materials exemplified as the constituent materials of the first matrix resin 341a.

[0178] The third scatterer 345b may have a refractive index different from that of the third matrix resin 345a and may form an optical interface with the third matrix resin 345a. For example, the third scatterer 345b may be light scattering particles. In addition to the above description, the third scatterer 345b may be substantially the same or similar to the first scatterer 341c described above, and thus a repeated description thereof may be omitted.

[0179] The second cover layer PS2 may be disposed on the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345. The second cover layer PS2 may cover one surface of each of the light-transmitting pattern 345, the wavelength conversion patterns 341 and 343, and the partition wall 370. The second cover layer PS2 may seal the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 together with the first cover layer PS1. Therefore, it is possible to prevent or substantially prevent impurities such as moisture or air infiltrated from the outside from damaging or contaminating the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345.

[0180] The second cover layer PS2 may cover one surface of each of the light-transmitting pattern 345, the wavelength conversion patterns 341 and 343, and the partition wall 370. The second cover layer PS2 may seal the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345 together with the first cover layer PS1. Therefore, it is possible to prevent or substantially prevent impurities such as moisture or air infiltrated from the outside from damaging or contaminating the wavelength conversion patterns 341 and 343 and the light-transmitting pattern 345.

[0181] According to the above-described display device 1, the compensation electrode 123 of the compensation part CP may be electrically connected to the common electrode 150 to minimize or reduce a voltage drop of the display device 1. Therefore, even when the thickness of the common electrode 150 is formed to be small, or the display device 1 is implemented as a large-area display device, it is possible to minimize or prevent degradation of the brightness of the display device 1, or reduce the possibility of degradation of the brightness of the display device 1.

[0182] Hereinafter, another embodiment is described. In the following embodiments, the same reference numerals will be assigned to the same components as those described above, and repeated descriptions may be omitted or simplified.

[0183] Figure 8is a cross-sectional view showing a compensation portion according to another embodiment of the present disclosure.

[0184] Reference Figure 8 According to the compensation part CP2 of this embodiment and according to Figures 1 to 7 The compensation part CP of the embodiment of FIG. 1 is different in that the compensation part CP2 includes a conductive partition wall 165 .

[0185] For example, the conductive partition wall 165 may be disposed on the first electrode 130. The conductive partition wall 165 may be disposed between the auxiliary electrode 135 and the organic layer 143. The lower surface of the conductive partition wall 165 may contact the upper surface of the auxiliary electrode 135, and the upper surface of the conductive partition wall 165 may directly contact the lower surface of the organic layer 143.

[0186] The conductive partition wall 165 may include one or more metals selected from among Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Ti, Ta, W, and Cu.

[0187] The cross-sectional shape of the conductive partition wall 165 may have an inverted tapered shape. That is, the side surface of the conductive partition wall 165 may have an inverted tapered shape. A first tapered angle θ1 between the side surface of the conductive partition wall 165 and the upper surface of the auxiliary electrode 135 may be in a range from about 95° to about 150°. Alternatively, the first tapered angle θ1 may be in a range from about 105° to about 120°, but the present disclosure is not limited thereto.

[0188] The width of the upper surface of the conductive partition wall 165 may be greater than that of the lower surface thereof. The lower surface of the conductive partition wall 165 may be defined as a surface in contact with the auxiliary electrode 135 , and the upper surface of the conductive partition wall 165 may be defined as a surface opposite to the lower surface of the conductive partition wall 165 .

[0189] The width of the lower surface of the conductive partition wall 165 may be smaller than the width of the upper surface of the auxiliary electrode 135. Alternatively, the width of the upper surface of the conductive partition wall 165 may be greater than the width of the upper surface of the auxiliary electrode 135. The lower surface of the conductive partition wall 165 may expose both the first side surface 135a disposed on one side of the upper surface of the auxiliary electrode 135 and the second side surface 135b disposed on the other side of the upper surface of the auxiliary electrode 135.

[0190] The first side surface 135a and the second side surface 135b of the auxiliary electrode 135 may overlap with the upper surface of the conductive partition wall 165 in the thickness direction (e.g., the third direction D3), so as to be covered by the upper surface of the conductive partition wall 165. Therefore, even when the organic layer 143 or the light-emitting layer 141 is formed on the first substrate 101, the organic layer 143 or the light-emitting layer 141 is not disposed on the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. Therefore, it is possible to ensure contact between the first side surface 135a and the second side surface 135b of the auxiliary electrode 135 and the common electrode 150. Therefore, as described above, the voltage drop caused by the reduction in the thickness of the common electrode 150 can be minimized or reduced.

[0191] In addition, as described above, when the conductive partition wall 165 is formed in an inverted tapered shape, the organic layer 143 may be disposed only on the upper surface of the conductive partition wall 165, and may not actually be disposed on the side surface of the conductive partition wall 165. That is, the side surface of the conductive partition wall 165 may not be covered by the organic layer 143 but may be exposed. On the other hand, the common electrode 150 having a step coverage higher than the step coverage of the organic layer 143 may also be disposed on the side surface of the conductive partition wall 165. That is, the common electrode 150 may be in direct contact with the side surface of the conductive partition wall 165. Therefore, the conductive partition wall 165 may serve as an electrode substantially the same as the auxiliary electrode 135. That is, the common electrode 150 may be electrically connected to the compensation electrode 123 through the conductive partition wall 165 and the auxiliary electrode 135. Therefore, the voltage drop caused by the reduction in the thickness of the common electrode 150 may be more effectively prevented, or the possibility of the voltage drop caused by the reduction in the thickness of the common electrode 150 may be reduced.

[0192] Other components and references besides the above components Figure 3 The components described are substantially the same or similar, and thus repeated descriptions thereof may be omitted.

[0193] Fig. 9 is a cross-sectional view showing a compensation portion according to still another embodiment of the present disclosure.

[0194] Reference Fig. 9 According to the compensation part CP3 of this embodiment and according to Figure 8 The compensation part CP2 of the embodiment of FIG. 1 is different in that the conductive partition wall 165_1 includes a first metal layer 165a and a second metal layer 165b.

[0195] The first metal layer 165a and the second metal layer 165b may be sequentially stacked. That is, the first metal layer 165a may be disposed between the auxiliary electrode 135 and the second metal layer 165b, and the second metal layer 165b may be disposed between the first metal layer 165a and the organic layer 143.

[0196] The first metal layer 165a and the second metal layer 165b may include one or more metals selected from Mo, methyl rhenium trioxide (MTO), Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Ti, Ta, W, and Cu. The first metal layer 165a and the second metal layer 165b may be made of different materials. For example, the first metal layer 165a may be formed of Mo, and the second metal layer 165b may include MTO.

[0197] The thickness of the first metal layer 165 a may be greater than the thickness of the second metal layer 165 b .

[0198] The width of the upper surface of the first metal layer 165a may be smaller than the width of the lower surface thereof. Alternatively, the width of the upper surface of the first metal layer 165a may be smaller than the width of the lower surface of the second metal layer 165b. The width of the lower surface of the first metal layer 165a may be smaller than the width of the lower surface of the second metal layer 165b.

[0199] The first metal layer 165a may expose the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. The first side surface 135a and the second side surface 135b of the auxiliary electrode 135 may overlap with the second metal layer 165b in the thickness direction (e.g., the third direction D3) so as to be covered by the second metal layer 165b. Therefore, even when the organic layer 143 or the light-emitting layer 141 is formed on the first substrate 101, the organic layer 143 or the light-emitting layer 141 is not disposed on the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. Therefore, the contact between the first side surface 135a and the second side surface 135b of the auxiliary electrode 135 and the common electrode 150 can be ensured. Therefore, as described above, the voltage drop caused by the reduction of the thickness of the common electrode 150 can be minimized or the voltage drop caused by the reduction of the thickness of the common electrode 150 can be reduced.

[0200] In addition, the end of the second metal layer 165b may protrude more than the end of the upper surface of the first metal layer 165a. The side surface of the first metal layer 165a may be at least partially covered by the second metal layer 165b. Therefore, the organic layer 143 may be disposed on the upper surface of the second metal layer 165b, and may not be disposed on the side surface of the first metal layer 165a. That is, the side surface of the first metal layer 165a may not be covered by the organic layer 143 but may be exposed. On the other hand, the common electrode 150 having a step coverage higher than the step coverage of the organic layer 143 may also be disposed on the side surface of the first metal layer 165a. That is, the common electrode 150 may be in direct contact with the side surface of the first metal layer 165a. Therefore, the side surface of the first metal layer 165a may be used as an electrode substantially the same as the auxiliary electrode 135. That is, the common electrode 150 may be electrically connected to the compensation electrode 123 through the first metal layer 165a and the auxiliary electrode 135. Therefore, as described above, a voltage drop due to a reduction in the thickness of the common electrode 150 may be more effectively prevented or may be reduced.

[0201] Fig.10 is a cross-sectional view showing a compensation portion according to another embodiment of the present disclosure.

[0202] Reference Fig.10 According to the compensation part CP4 of this embodiment and according to Figure 8 and Fig. 9 The compensation parts CP2 and CP3 of the embodiment of FIG. 1 are different in that the conductive partition wall 165_2 includes a first metal layer 165 a ′, a second metal layer 165 b ′, and a third metal layer 165 c ′.

[0203] The first metal layer 165a', the second metal layer 165b', and the third metal layer 165c' are sequentially stacked. The lower surface of the first metal layer 165a' may contact the auxiliary electrode 135, and the upper surface of the first metal layer 165a' may contact the lower surface of the second metal layer 165b'. In addition, the upper surface of the second metal layer 165b' may contact the lower surface of the third metal layer 165c', and the upper surface of the third metal layer 165c' may contact the lower surface of the organic layer 143.

[0204] The first metal layer 165a', the second metal layer 165b', and the third metal layer 165c' may include one or more metals selected from Al, Ti, Mo, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Ta, W, and Cu. The first metal layer 165a' and the third metal layer 165c' may be made of the same material, and the first metal layer 165a' and the second metal layer 165b' may be made of different materials. For example, the first metal layer 165a' and the third metal layer 165c' may be made of Ti, and the second metal layer 165b' may be made of Al.

[0205] The thickness of the first metal layer 165a' (e.g., the thickness in the third direction D3) may be smaller than the thickness of the second metal layer 165b'. In addition, the thickness of the third metal layer 165c' may be smaller than the thickness of the second metal layer 165b'. The thickness of the third metal layer 165c' may be substantially the same as (or equal to) the thickness of the first metal layer 165a'.

[0206] The width of the first metal layer 165a' (e.g., the width in the first direction D1) may be greater than the width of the upper surface or the lower surface of the second metal layer 165b'. In addition, the width of the third metal layer 165c' may be greater than the width of the upper surface or the lower surface of the second metal layer 165b'. The width of the upper surface of the second metal layer 165b' may be smaller than the width of its lower surface.

[0207] The first metal layer 165a' may expose the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. The first side surface 135a and the second side surface 135b of the auxiliary electrode 135 may overlap with the third metal layer 165c' in the thickness direction (e.g., the third direction D3), and thus be covered by the third metal layer 165c' in the thickness direction. Therefore, even when the organic layer 143 or the light-emitting layer 141 is formed on the first substrate 101, the organic layer 143 or the light-emitting layer 141 is not disposed on the first side surface 135a and the second side surface 135b of the auxiliary electrode 135. Therefore, it is possible to ensure the contact between the first side surface 135a and the second side surface 135b of the auxiliary electrode 135 and the common electrode 150. Therefore, as described above, the voltage drop caused by the reduction in the thickness of the common electrode 150 can be minimized or the voltage drop caused by the reduction in the thickness of the common electrode 150 can be reduced.

[0208] In addition, the end of the third metal layer 165c' may protrude more than the end of the upper surface of the second metal layer 165b'. The side surface of the second metal layer 165b' may be at least partially covered by the third metal layer 165c'. Therefore, the organic layer 143 may be disposed on the upper surface of the third metal layer 165c' and may not be disposed on the side surface of the second metal layer 165b'. That is, the side surface of the second metal layer 165b' may not be covered by the organic layer 143 but may be exposed. On the other hand, the common electrode 150 having a step coverage higher than the step coverage of the organic layer 143 may also be disposed on the side surface of the second metal layer 165b'. That is, the common electrode 150 may be in direct contact with the side surface of the second metal layer 165b'. Therefore, the side surface of the second metal layer 165b' may be used as an electrode substantially the same as the auxiliary electrode 135. That is, the common electrode 150 may be electrically connected to the compensation electrode 123 through the first metal layer 165a', the second metal layer 165b' and the auxiliary electrode 135. Therefore, as described above, a voltage drop due to a reduction in the thickness of the common electrode 150 may be more effectively prevented, or the possibility of a voltage drop due to a reduction in the thickness of the common electrode 150 may be reduced.

[0209] In addition, when the side surface of the third metal layer 165c' protrudes farther than the side surface of the first metal layer 165a', the organic layer 143 may not be disposed on the side surface of the first metal layer 165a'. That is, the side surface of the first metal layer 165a' may be in direct contact with the common electrode 150. In this way, the side surface of the first metal layer 165a' may serve as an electrode substantially the same as the auxiliary electrode 135. Therefore, as described above, a voltage drop due to a reduction in the thickness of the common electrode 150 may be more effectively prevented, or the possibility of a voltage drop due to a reduction in the thickness of the common electrode 150 may be reduced.

[0210] Fig.11 is a cross-sectional view showing a compensation portion according to another embodiment of the present disclosure.

[0211] Reference Fig.11 According to the compensation part CP5 of this embodiment and according to Figures 1 to 7 The compensation part CP of the embodiment of FIG. 1 is different in that the third insulating layer IL3 includes an aperture area HA, and the compensation electrode 123 contacts the common electrode 150 in the aperture area HA.

[0212] Specifically, the third insulating layer IL3 may include an aperture area HA therethrough.

[0213] Due to the hole area HA, the organic layer 143 may be spaced apart from the light emitting layer 141. The organic layer 143 may be partially disposed on the auxiliary electrode 135. The common electrode 150 having a relatively high step coverage may be continuously disposed on one surface of each of the hole areas HA.

[0214] The hole area HA may be formed at both sides of the compensation electrode 123 along the first direction D1 (e.g., may be formed at the first side of the compensation electrode 123 and the second side of the compensation electrode 123). The hole area HA disposed on the first side of the compensation electrode 123 may expose the first side surface 123a of the compensation electrode 123, and the hole area HA disposed on the second side of the compensation electrode 123 may expose the second side surface 123b of the compensation electrode 123.

[0215] The first side surface 123a and the second side surface 123b of the compensation electrode 123 may overlap with the auxiliary electrode 135 in the thickness direction (e.g., the third direction D3) so as to be covered by the auxiliary electrode 135. Therefore, even when the organic layer 143 or the light-emitting layer 141 is formed on the first substrate 101, the organic layer 143 or the light-emitting layer 141 is not disposed on the first side surface 123a and the second side surface 123b of the compensation electrode 123 in the hole area HA. ​​Therefore, it is possible to ensure contact between the first side surface 123a and the second side surface 123b of the compensation electrode 123 and the common electrode 150. Therefore, as described above, the voltage drop caused by the reduction in the thickness of the common electrode 150 can be minimized or reduced.

[0216] The hole area HA may be formed by etching the third insulating layer IL3 using the auxiliary electrode 135 as a mask. The hole area HA may have a trapezoidal shape in which a diameter (or width) of the hole area HA decreases toward the first base 101, but the present disclosure is not limited thereto.

[0217] At the same time, already Fig.11 , the hole area HA formed using the auxiliary electrode 135 formed by the first electrode 130 as a mask is shown, but the present disclosure is not limited thereto. That is, a separate hard mask layer may be included instead of the auxiliary electrode 135. The auxiliary electrode 135 may then be omitted.

[0218] Hereinafter, a method of manufacturing the display device 1 according to the embodiment is described. Among the display devices 1 according to various embodiments, a method of manufacturing the display device 1 according to the embodiment is described. Figures 1 to 7 An example of a method of displaying an apparatus 1. Figures 1 to 7 Components in which substantially the same components are denoted by the same reference numerals, and detailed reference numerals may be omitted.

[0219] Figures 12 to 182 is a cross-sectional view illustrating each process of a method of manufacturing a display device according to an embodiment of the present disclosure.

[0220] Reference Fig.12 First, an inorganic layer 160' is formed on the first substrate 101, wherein the first conductive layer 110 and the second conductive layer 120, the first insulating layer IL1, the second insulating layer IL2 and the third insulating layer IL3, and the first electrode 130 are formed on the first substrate 101. Vacuum deposition or sputtering can be used in the formation of the inorganic layer 160', but the present disclosure is not limited thereto. x 、SiN x or SiO x N y The inorganic layer 160 ′ is formed from the inorganic layer composition.

[0221] Then, refer to Fig.13 , a first photoresist PR1, a second photoresist PR2, and a third photoresist PR3 are formed on the inorganic layer 160'.

[0222] The first photoresist PR1 may be formed in the light emitting region of the pixel PX. That is, the first photoresist PR1 may be formed to overlap the first, second, and third pixel electrodes 131, 132, and 133.

[0223] A second photoresist PR2 may be formed in a non-light emitting region of the pixel PX. The second photoresist PR2 may be disposed to partially overlap the side surfaces of the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133. The second photoresist PR2 may be formed to be relatively thick so as to form the above-mentioned pixel defining layer 161. A second thickness d2 of the second photoresist PR2 may be greater than a first thickness d1 of the first photoresist PR1.

[0224] A third photoresist PR3 may be formed in the compensation part CP. The third photoresist PR3 may be formed to overlap the auxiliary electrode 135 of the compensation part CP. The third photoresist PR3 may be formed to be relatively thick so as to form the above-mentioned inverse tapered structure of the partition wall 163. A third thickness d3 of the third photoresist PR3 may be greater than the first thickness d1 of the first photoresist PR1.

[0225] Then, refer to Fig.14 , the first photoresist PR1, the second photoresist PR2, and the third photoresist PR3 are etched. The first photoresist PR1 of the pixel PX is removed by etching so that the upper surface of the first inorganic layer 161' can be exposed. During the etching of the first photoresist PR1, a portion of the second photoresist PR2 is etched so that the thickness of the second photoresist PR2' can be reduced.

[0226] During the etching of the first photoresist PR1 and the second photoresist PR2 of the pixel PX, the third photoresist PR3 and the inorganic layer 160' of the compensation part CP are etched, so that the thickness of the third photoresist PR3' can be reduced. In addition, the inorganic layer 160' exposed due to the third photoresist PR3 can be removed, and the upper surface of the third insulating layer IL3 can be exposed. The second inorganic layer 163' coated with the third photoresist PR3' can be protected from being etched.

[0227] Reference Fig.15 , the etching is continued to completely remove the second photoresist PR2' on the first inorganic layer 161' and the third photoresist PR3' on the second inorganic layer 163'. The second photoresist PR2' and the first inorganic layer 161' exposed by the second photoresist PR2' are removed to form a pixel defining layer 161, and the pixel defining layer 161 includes an opening exposing the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133.

[0228] During etching of the second photoresist PR2' and the first inorganic layer 161' of the pixel PX, the third photoresist PR3' and the second inorganic layer 163' of the compensation part CP may be etched. The second inorganic layer 163' may be overetched to form a partition wall 163 having an inverted tapered structure. The first taper angle θ1 between the partition wall 163 and the auxiliary electrode 135 may be adjusted within a range between about 100° and about 150°. Alternatively, the first taper angle θ1 may be adjusted within a range between about 110° and about 130°, but the disclosure is not limited thereto.

[0229] Then, refer to Fig.16 , an organic layer 143 and a light emitting layer 141 are formed. The organic layer 143 may be formed simultaneously (or synchronously) with the light emitting layer 141. In addition, the organic layer 143 and the light emitting layer 141 may be formed of the same material.

[0230] The organic layer 143 and the light-emitting layer 141 may be formed by depositing a material for an organic light-emitting layer on the entire surface of the first substrate 101. As described above, because the material for the organic light-emitting layer has a low step coverage, when the material for the organic light-emitting layer is deposited, the organic layer 143 or the light-emitting layer 141 may be formed only in some areas. That is, the light-emitting layer 141 is formed on the first pixel electrode 131, the second pixel electrode 132, and the third pixel electrode 133 of the pixel PX and the pixel defining layer 161, and the organic layer 143 is formed on the upper surface of the partition wall 163 of the compensation part CP, and the light-emitting layer 141 is formed over some areas of the third insulating layer IL3, and the organic layer 143 is not formed on the side surface of the partition wall 163 and the side surface of the auxiliary electrode 135.

[0231] Then, refer to Fig.17 , a common electrode 150 is formed on the organic layer 143 and the light emitting layer 141. The common electrode 150 may be continuously formed by depositing a material for the common electrode on the organic layer 143 and the light emitting layer 141. The material for the common electrode may include a material having a low work function for easy electron injection, for example, Li, Ca, LiF / Ca, LiF / Al, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF 2 , Ba or their compounds or mixtures (eg, a mixture of Ag and Mg). In addition, the material for the common electrode may also include transparent conductive oxides such as ITO, IZO, ITZO, ZnO, tin oxide, and the like.

[0232] As described above, since the common electrode 150 has a higher step coverage than the organic layer 143 and the light emitting layer 141, even when the partition wall 163 is formed in an inverted tapered structure, the common electrode 150 may be deposited not only on the side surface of the partition wall 163 but also on one surface of each structure below the partition wall 163. Therefore, since the common electrode 150 may contact the auxiliary electrode 135, a separate contact hole formation process for connecting the common electrode 150 to the auxiliary electrode 135 may be omitted. That is, it is possible to minimize or reduce the voltage drop of the display device 1 while ensuring economic feasibility of the process.

[0233] Then, refer to Fig.18 , a thin film encapsulation layer 170 is formed on the common electrode 150 to complete the first substrate 10. The filling layer 70 is placed between the completed first substrate 10 and the second substrate 30, so that the Figures 1 to 7 The display device 1 shown in FIG.

[0234] According to the method of manufacturing the display device 1 according to the above-described embodiment, the compensation electrode 123 of the compensation part CP can be electrically connected to the common electrode 150 to minimize or reduce the voltage drop of the display device 1. Therefore, even when the thickness of the common electrode 150 is formed to be relatively small (or thin), or the display device 1 is implemented as a large-area display device, it is possible to minimize the degradation of the brightness of the display device 1, prevent or reduce the degradation of the brightness of the display device 1.

[0235] Furthermore, the partition wall 163 is formed in an inverted tapered structure so that a separate contact hole forming process for connecting the common electrode 150 to the auxiliary electrode 135 can be omitted. That is, the voltage drop of the display device 1 can be minimized or reduced while ensuring economic feasibility of the process.

[0236] According to the display device and the method for manufacturing the display device according to the embodiment, the common electrode of the pixel is electrically connected to the compensation electrode of the compensation part, so that the voltage drop of the display device can be minimized or reduced. Therefore, even when the common electrode is formed with a thin thickness or the display device is implemented as a large-area display device, the degradation of the brightness of the display device can be minimized, prevented or reduced.

[0237] In addition, forming the partition wall in an inverted tapered structure makes it possible to omit a separate contact hole forming process for connecting the common electrode to the auxiliary electrode. That is, it is possible to minimize or reduce the voltage drop of the display device while ensuring economic feasibility of the process.

[0238] The effects according to the embodiments are not limited to the above-exemplified contents, and more various effects are included in the embodiments of the present disclosure.

[0239] At the end of the detailed description, it will be appreciated by those skilled in the art that many changes and modifications may be made to the exemplary embodiments without departing substantially from the principles of the present disclosure. Therefore, the disclosed exemplary embodiments disclosed are intended to be general and descriptive only and not for purposes of limitation.

Claims

1. A display device, comprising: a first matrix; A pixel electrode, located on the first substrate; a pixel defining layer having an opening for at least partially exposing the pixel electrode; A light-emitting layer, located on the pixel electrode; an auxiliary electrode, located at the same layer as the pixel electrode; a partition wall located on the auxiliary electrode and at least partially exposing a side surface of the auxiliary electrode; an organic layer, located on the partition wall; as well as A common electrode is continuously arranged on the light emitting layer and the organic layer, wherein the side surface of the partition wall has an inverted tapered shape, and Wherein, the common electrode contacts the side surface of the auxiliary electrode.

2. The display device according to claim 1, wherein: A first tapered angle between the side surface of the partition wall and the upper surface of the auxiliary electrode is greater than a second tapered angle between the side surface of the pixel defining layer and the upper surface of the pixel electrode.

3. The display device according to claim 2, wherein: The side surface of the partition wall contacts the common electrode. 4 . The display device according to claim 1 , further comprising a compensation electrode electrically connected to the auxiliary electrode.

5. The display device according to claim 4, further comprising a source electrode or a drain electrode located between the first substrate and the pixel electrode, in, The pixel electrode is electrically connected to the source electrode or the drain electrode, and Wherein, the compensation electrode and the source electrode or the drain electrode are located at the same layer.

6. The display device according to claim 4, wherein: The common electrode is electrically connected to the compensation electrode.

7. The display device according to claim 1, wherein: A lower surface of the partition wall contacts the auxiliary electrode, and an upper surface of the partition wall contacts the organic layer.

8. The display device according to claim 1, wherein: The partition wall and the pixel defining layer include the same material.

9. The display device according to claim 8, wherein: The partition wall and the pixel defining layer include SiN x 、SiO x or SiO x N y .

10. The display device according to claim 8, wherein: The partition wall includes a conductive material.

11. The display device according to claim 1, wherein: A lower surface of the organic layer contacts the partition wall, and an upper surface of the organic layer contacts the common electrode.

12. The display device according to claim 11, wherein: The organic layer and the light emitting layer include the same material.

13. The display device according to claim 12, wherein: The organic layer is spaced apart from the light emitting layer.

14. The display device according to claim 1, further comprising a wavelength conversion pattern and a light-transmitting pattern on the common electrode, and in, The wavelength conversion pattern or the light-transmitting pattern overlaps the opening of the pixel defining layer in a thickness direction.

15. A display device, comprising: a first matrix; A pixel electrode, located on the first substrate; a pixel defining layer having an opening for at least partially exposing the pixel electrode; A light-emitting layer, located on the pixel electrode; an auxiliary electrode, located at the same layer as the pixel electrode; a conductive partition wall located on the auxiliary electrode and comprising a first metal layer located on the auxiliary electrode and a second metal layer located on the first metal layer; an organic layer, located on the conductive partition wall; as well as A common electrode is continuously arranged on the light emitting layer and the organic layer, wherein the end of the second metal layer protrudes further than the end of the upper surface of the first metal layer, and Wherein, the common electrode contacts a side surface of the first metal layer.

16. The display device according to claim 15, wherein: The auxiliary electrode is electrically connected to the common electrode.

17. The display device according to claim 15, wherein: A lower surface of the first metal layer contacts the auxiliary electrode, and an upper surface of the first metal layer contacts the second metal layer.

18. The display device according to claim 17, wherein: A width of the lower surface of the first metal layer in a first direction is greater than a width of the upper surface of the first metal layer in the first direction.

19. The display device according to claim 17, wherein: A thickness of the first metal layer in a third direction is greater than a thickness of the second metal layer in the third direction.

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