Intelligent semiconductor switch

Abstract

Embodiments of the present application relate to intelligent semiconductor switches. According to one embodiment, an integrated circuit that can be used as an intelligent switch includes a first portion of a semiconductor switch coupled between a supply node and an output node and configured to provide a first current path between the supply node and the output node in accordance with a first drive signal. The integrated circuit also includes a second portion of the semiconductor switch coupled between the supply node and the output node and configured to provide a second current path between the supply node and the output node in accordance with a second drive signal. Further, the integrated circuit includes a drive circuit configured to generate the first drive signal and the second drive signal in response to a turn-on command such that the first portion of the semiconductor switch and the second portion of the semiconductor switch are alternately turned on and turned off, wherein during an overlap period, both the first portion of the semiconductor switch and the second portion of the semiconductor switch are in a conductive state.

Claims

1. An integrated circuit, comprising: The first part (M1) of the semiconductor switch is coupled between the power supply node (SUP) and the output node (OUT), and the first part is configured to respond to a first drive signal (V). G1 Provides a first current path between the power supply node (SUP) and the output node (OUT); The second portion (M2) of the semiconductor switch is coupled between the power supply node (SUP) and the output node (OUT), and the second portion is configured to respond to a second drive signal (V). G2 A second current path is provided between the power supply node (SUP) and the output node (OUT); The drive circuit (10) is configured to generate the first drive signal (V) in response to an on command. G1 ) and the second drive signal (V G2 This causes the first portion (M1) and the second portion (M2) of the semiconductor switch to be alternately turned on and off, wherein during the overlapping period, both the first portion (M1) and the second portion (M2) of the semiconductor switch are in the on state; and A first temperature sensor (24) is configured to sense the temperature (T1) of the first portion (M1) of the semiconductor switch, and a second temperature sensor (25) is configured to sense the temperature (T2) of the second portion (M2) of the semiconductor switch. The driving circuit (10) is configured to generate the first driving signal (V) based on the temperature (T1) sensed by the first portion (M1) and the temperature (T2) sensed by the second portion (M2) of the semiconductor switch. G1 ) and the second drive signal (V G2 ), The driving circuit (10) is configured to generate the first driving signal (V). G1 ) and the second drive signal (V G2 This allows the first portion (M1) of the semiconductor switch to be turned on if the temperature (T2) of the second portion (M2) is lower than the second temperature threshold (T). LOW If the temperature (T1) of the first portion (M1) reaches or exceeds the first temperature threshold (T), then... HIGH The second part (M2) of the semiconductor switch is turned on, and the first part (M1) of the semiconductor switch is turned off.

2. The integrated circuit according to claim 1, in, In response to the activation command, the first drive signal (V) G1 ) and the second drive signal (V G2 Periodically during the conduction time (T) ON The connection is made within the specified time and the deadline is (T). OFF It was shut down inside.

3. The integrated circuit according to claim 2, Wherein the first driving signal (V G1 On-time (T) ON ) and the second drive signal (V G2 On-time (T) ON ) overlap, and Wherein the first driving signal (V G1 The deadline (T) OFF ) and the second drive signal (V G2 The deadline (T) OFF )overlapping.

4. The integrated circuit according to claim 1, The driving circuit (10) is configured to generate a pulse width modulation signal as the first driving signal (V). G1 ) and the second drive signal (V G2 The pulse width modulation signal has a period and a duty cycle.

5. The integrated circuit according to claim 4, The duty cycle mentioned therein is greater than 50%.

6. The integrated circuit according to claim 5, in, The first drive signal (V) G1 ) relative to the second drive signal (V G2 Offset by half of the cycle time.

7. The integrated circuit according to claim 1, The drive circuit (10) is configured to generate the first drive signal (V) in response to a shutdown command. G1 ) and the second drive signal (V G2 This causes both the first part (M1) and the second part (M2) to be turned off.

8. The integrated circuit according to claim 1, The drive circuit (10) is configured to trigger the shutdown of the semiconductor switch in response to a detected over-temperature or shutdown command.

9. The integrated circuit according to claim 1, The driving circuit (10) is configured to generate the first driving signal (V). G1 ) and the second drive signal (V G2 This ensures that, while the first portion (M1) of the semiconductor switch is turned on, if the temperature (T2) of the second portion (M2) is not lower than the second temperature threshold (T),... LOW If the temperature (T1) of the first portion (M1) reaches or exceeds the first temperature threshold (T), then... HIGH The first part (M1) of the semiconductor switch is turned off, while the second part (M2) of the semiconductor switch is not turned on.

10. The integrated circuit according to claim 1, The semiconductor switch is integrated in a semiconductor body (100) including a unit array (20) comprising a plurality of transistor units, wherein a first portion of the transistor units forms a first portion (M1) of the semiconductor switch and a second portion of the transistor units forms a second portion (M2) of the semiconductor switch.

11. A method for switching loads, comprising: Receive connection command; In response to receiving the turn-on command, a first drive signal (V) is generated for the first part (M1) of the semiconductor switch. G1 ) and a second drive signal (V) for the second part (M2) of the semiconductor switch. G2 ), The two parts (M1, M2) of the semiconductor switch provide a current path between the power supply node (SUP) and the output node (OUT) when the switch is turned on. The first driving signal (V) is generated. G1 ) and the second drive signal (V G2 This allows the first portion (M1) and the second portion (M2) of the semiconductor switch to be alternately turned on and off, wherein during the overlapping period, both the first portion (M1) and the second portion (M2) of the semiconductor switch are in the on state; as well as The temperature (T1) of the first portion (M1) of the semiconductor switch is sensed via a first temperature sensor, and the temperature (T2) of the second portion (M2) of the semiconductor switch is sensed via a second temperature sensor. The first driving signal (V) is generated. G1 ) and the second drive signal (V G2 The temperature (T1) sensed by the first part (M1) and the temperature (T2) sensed by the second part (M2) of the semiconductor switch are used. Wherein the first driving signal (V G1 ) and the second drive signal (V G2 ) is generated to further enable the first portion (M1) of the semiconductor switch to be turned on if the temperature (T2) of the second portion (M2) is lower than the second temperature threshold (T). LOW If the temperature (T1) of the first portion (M1) reaches or exceeds the first temperature threshold (T), then... HIGH The second part (M2) of the semiconductor switch is turned on, and the first part (M1) of the semiconductor switch is turned off.

12. The method according to claim 11, Among them, through the input signal (S) IN The connection command is represented by a transition from low to high level or from high to low level in the input field.

13. A method for switching loads, comprising: Receive connection command; In response to receiving the turn-on command, a first drive signal (V) is generated for the first part (M1) of the semiconductor switch. G1 ) and a second drive signal (V) for the second part (M2) of the semiconductor switch. G2 ), The temperature (T1) of the first part (M1) of the semiconductor switch and the temperature (T2) of the second part (M2) of the semiconductor switch are sensed. The two parts (M1, M2) of the semiconductor switch provide a current path between the power supply node (SUP) and the output node (OUT) when the switch is turned on. In response to the turn-on command, the first drive signal (V) is generated according to the switching scheme. G1 ) and the second drive signal (V G2 The switching scheme includes responding to the temperature (T1) of the first portion (M1) of the semiconductor switch reaching a first temperature threshold (T). HIGH ): If the temperature (T2) of the second part (M2) is lower than the second temperature threshold (T) LOW If ), then the second part (M2) of the semiconductor switch is turned on, and Turn off the first part (M1) of the semiconductor switch.

14. The method according to claim 13, The switching scheme further includes responding to the temperature (T2) of the second portion (M2) of the semiconductor switch reaching the first temperature threshold (T). HIGH ): If the temperature (T1) of the first part (M1) or the third temperature of the third part is lower than the second temperature threshold (T) LOW If the first part (M1) or the third part of the semiconductor switch is connected, then the semiconductor switch is activated. Turn off the second part (M2) of the semiconductor switch.

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