Display device

Abstract

The display device includes: a first electrode; a second electrode overlapping the first electrode; a light-emitting layer disposed between the first electrode and the second electrode; an isolation wall overlapping a portion of the first electrode; and an inorganic layer disposed between the isolation wall and the first electrode, wherein the inorganic layer covers an end of the first electrode.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2019-0109444, filed on September 14, 2019, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to display devices, and more particularly to display devices comprising a first electrode and an inorganic layer on the first electrode. Background Technology

[0004] Generally, a display device includes two electrodes and a light-emitting layer disposed between the two electrodes. Electrons injected from the cathode (which is one electrode) and holes injected from the anode (which is the other electrode) couple with each other in the light-emitting layer to generate excitons. Excitons emit light while releasing energy.

[0005] The display device includes multiple pixels, each pixel including a light-emitting diode (LED), the LED including a cathode, an anode, and a light-emitting layer between the cathode and the anode. Each pixel includes a transistor and a capacitor for driving the LED. Summary of the Invention

[0006] According to an exemplary embodiment of the present invention, a display device includes: a first electrode; a second electrode overlapping the first electrode; a light-emitting layer disposed between the first electrode and the second electrode; an isolation wall overlapping a portion of the first electrode; and an inorganic layer disposed between the isolation wall and the first electrode, wherein the inorganic layer covers an end of the first electrode.

[0007] In an exemplary embodiment of the present invention, the light-emitting layer is surrounded by a first electrode, an inorganic layer, and a second electrode.

[0008] In an exemplary embodiment of the present invention, the side surface of the light-emitting layer contacts the side surface of the inorganic layer.

[0009] In an exemplary embodiment of the present invention, the light-emitting layer has a thickness of about 2,000 angstroms to about 4,000 angstroms.

[0010] In an exemplary embodiment of the invention, the inorganic layer has a thickness of about 50 angstroms to about 5000 angstroms.

[0011] In an exemplary embodiment of the present invention, the inorganic layer includes at least one of silicon oxide, silicon oxide nitride, and silicon nitride.

[0012] In an exemplary embodiment of the present invention, the inorganic layer contacts the second electrode.

[0013] In an exemplary embodiment of the present invention, the display device further includes: a transistor disposed on a substrate; and an insulating layer disposed on the transistor, wherein a second electrode contacts the insulating layer.

[0014] According to an exemplary embodiment of the present invention, a display device includes: a transistor disposed on a substrate; an insulating layer disposed on the transistor; a first electrode disposed on the insulating layer and electrically connected to the transistor; a second electrode overlapping the first electrode; a light-emitting layer disposed between the first electrode and the second electrode; and an inorganic layer disposed between the first electrode and the second electrode, wherein the inorganic layer contacts the light-emitting layer and covers the end of the first electrode.

[0015] In an exemplary embodiment of the present invention, the second electrode includes a first region overlapping the first electrode and a second region corresponding to the remaining portion, and the distance from the upper surface of the substrate to the upper surface of the first region of the second electrode is greater than the distance from the upper surface of the substrate to the upper surface of the second region of the second electrode.

[0016] In an exemplary embodiment of the present invention, the light-emitting layer is surrounded by a first electrode, an inorganic layer, and a second electrode.

[0017] In an exemplary embodiment of the present invention, the end of the light-emitting layer contacts the end of the inorganic layer.

[0018] In an exemplary embodiment of the present invention, the light-emitting layer has a thickness of about 2,000 angstroms to about 4,000 angstroms.

[0019] In an exemplary embodiment of the invention, the inorganic layer has a thickness of about 50 angstroms to about 5000 angstroms.

[0020] According to an exemplary embodiment of the present invention, a display device includes: a first electrode; a second electrode overlapping the first electrode; a light-emitting layer disposed on the first electrode; an isolation wall overlapping a portion of the first electrode; and an inorganic layer disposed between the isolation wall and the first electrode, wherein the inorganic layer includes an opening overlapping the isolation wall.

[0021] In an exemplary embodiment of the present invention, the light-emitting layer is surrounded by a first electrode, an inorganic layer, and a second electrode.

[0022] In an exemplary embodiment of the present invention, the light-emitting layer has a thickness of about 2,000 angstroms to about 4,000 angstroms.

[0023] In an exemplary embodiment of the invention, the inorganic layer has a thickness of about 50 angstroms to about 5000 angstroms.

[0024] In an exemplary embodiment of the present invention, the inorganic layer includes at least one of silicon oxide, silicon oxide nitride, and silicon nitride.

[0025] In an exemplary embodiment of the present invention, an inorganic layer contacts a portion of the second electrode.

[0026] According to an exemplary embodiment of the present invention, a display device includes: a first electrode; a light-emitting layer disposed on the first electrode; a second electrode disposed on the light-emitting layer; an isolation wall covering a portion of the first electrode; and an inorganic layer disposed between the first electrode and the isolation wall and between the second electrode and the first electrode.

[0027] In an exemplary embodiment of the present invention, the inorganic layer contacts the light-emitting layer.

[0028] In an exemplary embodiment of the present invention, an inorganic layer covers the upper surface and the side surface of the first electrode. Attached Figure Description

[0029] Figure 1 A cross-sectional view of a display device according to an exemplary embodiment of the present invention is illustrated;

[0030] Figure 2 A cross-sectional view of a display device according to an exemplary embodiment of the present invention is illustrated;

[0031] Figure 3 A cross-sectional view of a display device according to an exemplary embodiment of the present invention is illustrated;

[0032] Figure 4 An equivalent circuit diagram of a pixel of a display device according to an exemplary embodiment of the present invention is illustrated;

[0033] Figure 5 A layout diagram of transistors and capacitors of a display device according to an exemplary embodiment of the present invention is illustrated;

[0034] Figure 6 Explaining along Figure 5 A cross-sectional view of the display device taken from line VI-VI;

[0035] Figure 7 Explaining along Figure 5 Cross-sectional views of the display device taken from lines VII-VII and VII'-VII';

[0036] Figure 8 A cross-sectional view of the display device according to the comparative example is illustrated;

[0037] Figure 9A A diagram illustrating the light-emitting region according to an exemplary embodiment of the present invention;

[0038] Figure 9B An image illustrating the light-emitting region according to an exemplary embodiment of the present invention;

[0039] Figure 10A A diagram illustrating the luminescent region based on the comparative example;

[0040] Figure 10B Images of the luminescent regions based on comparative examples are illustrated;

[0041] Figure 11 An image illustrating the luminescent region according to an exemplary embodiment of the present invention; and

[0042] Figure 12 Images of the luminescent regions based on comparative examples are illustrated. Detailed Implementation

[0043] The invention will now be described more fully with reference to the accompanying drawings. It should be understood that the exemplary embodiments of the invention described herein may be modified in various ways without departing from the spirit or scope of this disclosure.

[0044] In drawings and specifications, similar reference numerals can be used to label similar components, and therefore, repeated descriptions can be omitted.

[0045] Furthermore, for clarity, the dimensions and thickness of each element may be enlarged in the figures, but the invention is not limited thereto.

[0046] It should be understood that when a component, such as a layer, film, region, area, or substrate, is referred to as being "on" another component, it may be directly on the other component, or there may be intermediate components. Conversely, when a component is referred to as being "directly" on another component, there are no intermediate components.

[0047] Furthermore, throughout the instruction manual, the phrase "in a plan view" can mean viewing the target portion from the top, and the phrase "in a cross-sectional view" can mean viewing the cross-section formed by vertically cutting the target portion from the side.

[0048] First, refer to Figure 1 A display device according to an exemplary embodiment of the present invention is described. Figure 1 A cross-sectional view of a display device according to an exemplary embodiment of the present invention is illustrated.

[0049] The display device according to this embodiment includes a buffer layer 111 disposed on a substrate 110. The buffer layer 111 may overlap with the surface of the substrate 110. For example, the buffer layer 111 may overlap the entire upper surface of the substrate 110. The buffer layer 111 may include an inorganic material, such as silicon oxide (SiO2). x ), silicon nitride (SiN)x ), etc. Buffer layer 111 can be a single layer or multiple layers.

[0050] The buffer layer 111 may flatten one surface of the substrate 110, or it may prevent the diffusion of impurities that would degrade the properties of the semiconductor layer 151, which will be described later, and may prevent the penetration of moisture, etc. In an exemplary embodiment of the invention, the buffer layer 111 may be omitted.

[0051] The semiconductor layer 151 of the transistor is disposed on the buffer layer 111. The semiconductor layer 151 includes a channel region 154, and doped source regions 153 and doped drain regions 155 disposed on each side of the channel region 154.

[0052] Semiconductor layer 151 may include, for example, polycrystalline silicon, amorphous silicon, or oxide semiconductor.

[0053] A gate insulating layer 140 is disposed on the semiconductor layer 151. The gate insulating layer 140 may be disposed to overlap with the surface of the substrate 110. For example, the gate insulating layer 140 may overlap the entire upper surface of the substrate 110.

[0054] The gate insulating layer 140 may include an inorganic insulating material, such as silicon oxide (SiO2). x ), silicon nitride (SiN) x )wait.

[0055] The gate conductor of the gate electrode 124 of the transistor is disposed on the gate insulating layer 140. The gate electrode 124 may overlap with the channel region 154 of the semiconductor layer 151.

[0056] An interlayer insulating layer 160, comprising inorganic or organic insulating materials, is disposed on the gate electrode 124.

[0057] Data conductors, including source electrode 173 and drain electrode 175 of transistors, data line 171, drive voltage line, etc., are disposed on interlayer insulating layer 160. Source electrode 173 and drain electrode 175 can be connected to source region 153 and drain region 155 of semiconductor layer 151 through contact holes 163 and contact holes 165 provided in interlayer insulating layer 160 and gate insulating layer 140, respectively.

[0058] The gate electrode 124, source electrode 173, and drain electrode 175 together with the semiconductor layer 151 form a transistor. For example, the transistor in the display may be a driving transistor included in a pixel of the display device. The transistor in the display may be called a top-gate transistor because the gate electrode 124 is disposed on the semiconductor layer 151. The structure of the transistor is not limited to this and may be varied. For example, the transistor may be a bottom-gate transistor, wherein the gate electrode is disposed below the semiconductor layer.

[0059] An insulating layer 180 is disposed on the interlayer insulating layer 160 and the data conductor. The insulating layer 180 can be used to eliminate or flatten steps to increase the luminous efficiency of the light-emitting diode to be formed thereon. The insulating layer 180 can overlap with and cover the transistor.

[0060] The insulating layer 180 may include, for example, an organic insulating material. Organic insulating materials may include, for example, polyimide, polyamide, polyacrylate, polyphenylene ether, polyphenylene sulfide, unsaturated polyester, epoxy resin, phenolic resin, etc., but the invention is not limited thereto.

[0061] A first electrode 191 (which may be a pixel electrode) is disposed on an insulating layer 180. The first electrode 191 can be connected to the drain electrode 175 of a transistor via a contact hole 185 provided in the insulating layer 180.

[0062] For example, the first electrode 191 may include a reflective conductive material, a semi-transmissive conductive material, or a transparent conductive material. For example, the first electrode 191 may include at least one of a transparent conductive material (e.g., indium tin oxide (ITO) or indium zinc oxide (IZO)) and a metal (e.g., lithium (Li), calcium (Ca), aluminum (Al), silver (Ag), magnesium (Mg), and / or gold (Au)). The first electrode 191 may include a structure in which multiple layers are stacked, and for example, the first electrode 191 may have a structure in which ITO / Ag / ITO is stacked.

[0063] The thickness t1 of the first electrode 191 can be approximately Approximately 1500 Angstroms.

[0064] An isolation wall 360 is disposed on the insulating layer 180 and the first electrode 191. The isolation wall 360 may overlap a portion of the first electrode 191. The isolation wall 360 has an opening 361 that overlaps a portion of the first electrode 191. The opening 361 of the isolation wall 360 can provide an area corresponding to a pixel.

[0065] The insulating wall 360 may include organic insulating materials, such as polyimide, polyacrylate and polyamide, but the invention is not limited thereto.

[0066] An inorganic layer 350 is disposed between the isolation wall 360 and the first electrode 191. The inorganic layer 350 may comprise any inorganic material, and for example, it may comprise silicon oxide (SiO2). x ), silicon nitride oxide (SiON) x ) and silicon nitride (SiN) x At least one of the following.

[0067] The inorganic layer 350 may cover the end of the first electrode 191. For example, the inorganic layer 350 may overlap a portion of the upper surface of the first electrode 191 and extend toward the end of the first electrode 191 to cover the side surface of the end of the first electrode 191.

[0068] The end of the inorganic layer 350 may contact the light-emitting layer 370. For example, the end of the inorganic layer 350 is shown to be in contact with the light-emitting layer 370, but the invention is not limited thereto. For example, the end of the inorganic layer 350 may have a structure that covers the upper surface of the end of the light-emitting layer 370.

[0069] A portion of the inorganic layer 350 may overlap with the second electrode 270. For example, a portion of the inorganic layer 350 may be disposed between the first electrode 191 and the second electrode 270, and may contact the first electrode 191 and the second electrode 270 respectively.

[0070] The other end of the inorganic layer 350 may overlap with the isolation wall 360. In this case, the inorganic layer 350 may include an opening 351 that overlaps with the isolation wall 360.

[0071] The insulating layer 180 and the insulating wall 360 may comprise organic materials, and when heat and / or light energy are applied to the organic materials, impurities may be generated. For example, impurities may include at least one of O-based compounds, OH-based compounds, F-based compounds, and S-based compounds, but the invention is not limited thereto.

[0072] Because of the inorganic layer 350, impurities may not diffuse in the light-emitting layer 370, but may diffuse in the isolation wall 360, which includes organic material. When the inorganic layer 350 does not include the opening 351, impurities generated in the insulating layer 180 can be blocked by the first electrode 191 and the inorganic layer 350. In this case, the film may be lifted by impurities at the interface between the first electrode 191 and the insulating layer 180 and / or at the interface between the inorganic layer 350 and the insulating layer 180. However, in this embodiment, when the inorganic layer 350 includes the opening 351, impurities can move through the opening 351 in the isolation wall 360. Therefore, film lifting can be suppressed.

[0073] The thickness t2 of the inorganic layer 350 can range from about 50 angstroms to about 5000 angstroms. When the thickness of the inorganic layer 350 is less than about 50 angstroms, it is difficult to prevent the diffusion of impurities due to its relatively thin thickness. When the thickness of the inorganic layer 350 is greater than about 5000 angstroms, it can cause a short circuit in the second electrode 270 deposited on the inorganic layer 350.

[0074] A light-emitting layer 370 is disposed on the first electrode 191. The light-emitting layer 370 includes a light-emitting region. The light-emitting layer 370 may additionally include at least one of a hole injection region, a hole transport region, an electron injection region, and an electron transport region.

[0075] The light-emitting layer 370 may include materials for inherently displaying primary colors, such as red, green, and blue light. Alternatively, a structure may be provided in which multiple layers of organic materials for emitting different colors of light are stacked. Furthermore, it may include inorganic materials for emitting light, such as red, green, and blue light.

[0076] In the plan view, the light-emitting layer 370 does not overlap with the isolation wall 360. The light-emitting layer 370 and the isolation wall 360 may be spaced apart from each other. The end of the light-emitting layer 370 may contact the end of the inorganic layer 350.

[0077] A second electrode 270, which transmits a common voltage, is disposed on the light-emitting layer 370 and opposite to the first electrode 191. The second electrode 270 may comprise a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). The second electrode 270 can be formed by stacking metals, such as calcium (Ca), barium (Ba), magnesium (Mg), aluminum (Al), etc., to achieve light transmittance. At least one passivation layer or functional layer may be formed on the second electrode 270. The thickness of the second electrode 270 may be approximately [missing information - likely a number]. Approximately 200 angstroms.

[0078] The second electrode 270 may overlap with the inorganic layer 350. For example, the second electrode 270 may contact the inorganic layer 350 exposed in the area where the insulating wall 360 and the light-emitting layer 370 are spaced apart from each other. For example, the second electrode 270 may contact a portion of the inorganic layer 350 that does not overlap with the insulating wall 360 and the light-emitting layer 370. When the inorganic layer 350 is not provided, there may be a problem where the second electrode 270 contacts the first electrode 191.

[0079] Each pixel has a first electrode 191, a light-emitting layer 370, and a second electrode 270 forming a light-emitting element (which is a light-emitting diode). The first electrode 191 can be an anode (which is a hole injection electrode), and the second electrode 270 can be a cathode (which is an electron injection electrode). Alternatively, the first electrode 191 can be a cathode and the second electrode 270 can be an anode. Holes and electrons are injected into the light-emitting layer 370 from the first electrode 191 and the second electrode 270, respectively, and light is emitted when excitons (where injected holes and electrons recombine) move from the excited state to the ground state and release energy.

[0080] An encapsulation layer 390 may be disposed on the second electrode 270. The encapsulation layer 390 may have a structure including multiple inorganic layers or wherein inorganic and organic layers are alternately stacked. According to this embodiment, the encapsulation layer 390 may include a multilayer structure in which organic layers, inorganic layers and organic layers are stacked.

[0081] The inorganic layer may include metal oxides or metal nitrides. For example, the inorganic layer may include SiN.x At least one of Al2O3, SiO2, and TiO2. The organic layer may include a polymer, and may include, for example, at least one of polyethylene terephthalate, polyimide, polycarbonate, epoxy resin, polyethylene, and polyacrylate.

[0082] In this embodiment, the encapsulation layer 390 is directly disposed on the second electrode 270, but the present invention is not limited thereto. For example, separate filler materials, adhesive materials, etc., may be disposed between the second electrode 270 and the encapsulation layer 390.

[0083] A display device according to an exemplary embodiment of the present invention may include a light-emitting layer 370 surrounded by an inorganic material. (See reference) Figure 1 The lower surface of the light-emitting layer 370 may overlap with the first electrode 191. The side surface of the light-emitting layer 370 may overlap with the inorganic layer 350. In addition, the upper surface of the light-emitting layer 370 may overlap with the second electrode 270. The light-emitting layer 370 according to this embodiment may be surrounded by the first electrode 191, the inorganic layer 350, and the second electrode 270, which include inorganic materials.

[0084] In films containing organic materials, such as insulating layer 180 and / or insulating wall 360, gases may be generated during the manufacturing process or by sunlight, and this is called degassing. When the generated degassing flows into the light-emitting layer 370, problems such as contamination or shrinkage of the light-emitting layer 370 may occur. Because the light-emitting layer 370 according to this embodiment has a structure surrounded by inorganic material, it is possible to prevent the entry of gases generated from the film containing organic materials. Contamination and shrinkage of the light-emitting layer 370 can be reduced, and the reliability of the display device including the light-emitting layer 370 can be increased.

[0085] The following text will refer to Figure 2 and Figure 3 A display device according to an exemplary embodiment of the present invention is described. Figure 2 A cross-sectional view of a display device according to an exemplary embodiment of the present invention is illustrated, and Figure 3 A cross-sectional view of a display device according to an exemplary embodiment of the present invention is illustrated. Descriptions of those constituent elements that are the same as or similar to those in the above embodiments may be omitted.

[0086] refer to Figure 2 According to an exemplary embodiment of the present invention, an inorganic layer 350 is disposed on the first electrode 191 and the insulating layer 180. The inorganic layer 350 may comprise any inorganic material, and for example, it may comprise silicon oxide (SiO2). x ), silicon nitride oxide (SiON) x ) and silicon nitride (SiN) x At least one of the following.

[0087] The inorganic layer 350 may cover the end of the first electrode 191. The inorganic layer 350 may overlap with the edge of the first electrode 191. The first electrode 191 may be covered by the light-emitting layer 370 and the inorganic layer 350, and shall not contact the second electrode 270.

[0088] The end of the inorganic layer 350 may contact the light-emitting layer 370. In this document, the end of the inorganic layer 350 is shown as contacting the light-emitting layer 370, but the invention is not limited thereto. For example, the end of the inorganic layer 350 may have a structure that covers the end of the light-emitting layer 370.

[0089] The inorganic layer 350 may overlap with the second electrode 270. For example, all of the inorganic layers 350 may overlap with the second electrode 270, and some of the inorganic layers 350 may be disposed between the first electrode 191 and the second electrode 270. The inorganic layers 350 may contact the first electrode 191 and the second electrode 270, respectively.

[0090] The inorganic layer 350 may be spaced apart from the isolation wall 360. The inorganic layer 350 may not overlap with the isolation wall 360. The inorganic layer 350 may include an opening 351 that overlaps with the isolation wall 360.

[0091] The insulating layer 180 and the insulating wall 360 may comprise organic materials, and when heat and / or light energy are applied to the organic materials, impurities may be generated. For example, impurities may include at least one of O-based compounds, OH-based compounds, F-based compounds, and S-based compounds, but the invention is not limited thereto.

[0092] Because of the inorganic layer 350, impurities may not diffuse in the light-emitting layer 370, but may diffuse in the isolation wall 360, which includes organic material. When the inorganic layer 350 does not include the opening 351 and overlaps the entire surface of the substrate 110, impurities generated in the insulating layer 180 can be blocked by the first electrode 191 and the inorganic layer 350. In this case, the film may be lifted by impurities at the interface between the first electrode 191 and the insulating layer 180 and / or at the interface between the inorganic layer 350 and the insulating layer 180. However, in this embodiment, when the inorganic layer 350 includes the opening 351, impurities can move through the opening 351 in the isolation wall 360; therefore, film lifting can be suppressed.

[0093] In an exemplary embodiment of the present invention, the isolation wall 360 may be spaced apart from the light-emitting layer 370. Additionally, the isolation wall 360 may be spaced apart from the inorganic layer 350. In the spacer region between the isolation wall 360 and the inorganic layer 350, the insulating layer 180 may be exposed. In the spacer region, the insulating layer 180 may contact the second electrode 270.

[0094] According to this embodiment, the upper surface of the light-emitting layer 370 overlaps with the second electrode 270, the side surface of the light-emitting layer 370 overlaps with the inorganic layer 350, and the lower surface of the light-emitting layer 370 overlaps with the first electrode 191. In other words, the light-emitting layer 370 is surrounded by the second electrode 270, the inorganic layer 350, and the first electrode 191. Because the light-emitting layer 370 is surrounded by inorganic material, performance degradation caused by degassing, such as the penetration of impurities, can be prevented.

[0095] refer to Figure 3 The display device according to an exemplary embodiment of the present invention may have wherein... Figure 1 The display device removes the 360° isolation wall structure.

[0096] The first electrode 191 and the light-emitting layer 370 may be sequentially disposed on the insulating layer 180. The inorganic layer 350 may be disposed at a position overlapping the end of the first electrode 191. For example, the inorganic layer 350 may extend to cover the side surface of the end of the first electrode 191 while overlapping at least a portion of the upper surface of the first electrode 191. The inorganic layer 350 may contact the insulating layer 180 exposed by the first electrode 191.

[0097] The end of the inorganic layer 350 may contact the light-emitting layer 370. In this document, the end of the inorganic layer 350 is shown to be in contact with the light-emitting layer 370, but the invention is not limited thereto, and the end of the inorganic layer 350 may have a structure that covers the upper surface of the end of the light-emitting layer 370.

[0098] The inorganic layer 350 may overlap with the second electrode 270. For example, all of the inorganic layer 350 may overlap with the second electrode 270. For example, a portion of the inorganic layer 350 may be disposed between the first electrode 191 and the second electrode 270, and may contact the first electrode 191 and the second electrode 270 respectively.

[0099] The inorganic layer 350 may include an opening 351. The opening 351 may be formed between adjacent first electrodes 191 and may expose a portion of the insulating layer 180.

[0100] Reference Figure 1 and Figure 2 The described implementation methods are different. Figure 3 The implementation may exclude the isolation wall 360. The second electrode 270 may be directly disposed on the inorganic layer 350 and the light-emitting layer 370.

[0101] Spacers may be additionally disposed between adjacent first electrodes 191.

[0102] According to this embodiment, the second electrode 270 overlapping the first electrode 191 and the light-emitting layer 370 may have a step relative to the second electrode 270 overlapping the region other than the first electrode 191 and the light-emitting layer 370. For example, the portion of the second electrode 270 overlapping the first electrode 191 and the light-emitting layer 370 may be higher than another portion of the second electrode 270 disposed on the insulating layer 180. For example, a portion of the second electrode 270 overlapping the light-emitting layer 370 and the first electrode 191 is called a first region, and the remaining portion of the second electrode 270 is called a second region. In this case, the straight-line distance from the upper surface of the second electrode 270 disposed in the first region to the substrate 110 may be greater than the straight-line distance from the upper surface of the second electrode 270 disposed in the second region to the substrate 110. The second electrode 270 overlapping the light-emitting layer 370 may be configured to be higher than the second electrode 270 corresponding to the region other than the region overlapping the light-emitting layer 370.

[0103] The following text will refer to Figures 4 to 7 A display device according to an exemplary embodiment of the present invention is described. Figure 4 A circuit diagram of a pixel of a display device according to an exemplary embodiment of the present invention is illustrated. Figure 5 A layout diagram of transistors and capacitors of a display device according to an exemplary embodiment of the present invention is illustrated. Figure 6 Explaining along Figure 5 A cross-sectional view of the display device taken from line VI-VI, and Figure 7 Explaining along Figure 5 Cross-sectional views of the display device taken from lines VII-VII and VII'-VII'.

[0104] like Figure 4 As shown in the figure, the display device according to the embodiment includes multiple signal lines (151a, 152, 153a, 158, 171, 172 and 192) and multiple pixels PX connected to the multiple signal lines and arranged in a substantially matrix form.

[0105] A pixel PX of a light-emitting diode display includes multiple transistors (T1, T2, T3, T4, T5, T6, and T7) connected to multiple signal lines (151a, 152, 153a, 158, 171, 172, and 192), a storage capacitor Cst, and a light-emitting diode OLD.

[0106] The transistors (T1, T2, T3, T4, T5, T6 and T7) consist of a driving transistor T1, a switching transistor T2, a compensation transistor T3, an initialization transistor T4, an operation control transistor T5, a light-emitting control transistor T6 and a bypass transistor T7.

[0107] The signal lines (151a, 152, 153a, 158, 171, 172, and 192) include scan line 151a, front scan line 152, light emission control line 153a, bypass control line 158, data line 171, drive voltage line 172, and initialization voltage line 192. Scan line 151a transmits the scan signal Sn. Front scan line 152 transmits the front scan signal Sn-1 to the initialization transistor T4. Light emission control line 153a transmits the light emission control signal EM to the operation control transistor T5 and the light emission control transistor T6. Bypass control line 158 transmits the bypass signal BP to the bypass transistor T7. Data line 171 intersects with scan line 151a and transmits the data signal Dm. Drive voltage line 172 transmits the drive voltage (ELVDD) and is formed substantially parallel to data line 171. Initialization voltage line 192 transmits the initialization voltage Vint that initializes drive transistor T1.

[0108] The gate electrode G1 of the driving transistor T1 is connected to one end (e.g., electrode) Cst1 of the storage capacitor Cst. The source electrode S1 of the driving transistor T1 is connected to the driving voltage line 172 via the operation control transistor T5. The drain electrode D1 of the driving transistor T1 is electrically connected to the anode of the light-emitting diode OLD via the light-emitting control transistor T6. The driving transistor T1 receives the data signal Dm according to the switching operation of the switching transistor T2 and drives the driving current I. d Supply to light-emitting diodes (OLDs).

[0109] The gate electrode G2 of switching transistor T2 is connected to scan line 151a. The source electrode S2 of switching transistor T2 is connected to data line 171. The drain electrode D2 of switching transistor T2 is connected to the source electrode S1 of driving transistor T1 and is connected to drive voltage line 172 via operation control transistor T5. Switching transistor T2 turns on in response to the scan signal Sn transmitted through scan line 151a to perform a switching operation, so as to transmit the data signal Dm received through data line 171 to the source electrode S1 of driving transistor T1.

[0110] The gate electrode G3 of the compensation transistor T3 is connected to scan line 151a. The source electrode S3 of the compensation transistor T3 is connected to the drain electrode D1 of the driving transistor T1, and simultaneously connected to the anode of the light-emitting diode (OLED) via the light-emitting control transistor T6. The drain electrode D3 of the compensation transistor T3 is connected to the drain electrode D4 of the initialization transistor T4, one end Cst1 of the storage capacitor Cst, and the gate electrode G1 of the driving transistor T1. The compensation transistor T3 is turned on according to the scan signal Sn received through scan line 151a, so as to connect the gate electrode G1 and the drain electrode D1 of the driving transistor T1 to each other and to make the driving transistor T1 diode connected.

[0111] The gate electrode G4 of the initialization transistor T4 is connected to the front scan line 152. The source electrode S4 of the initialization transistor T4 is connected to the initialization voltage line 192. The drain electrode D4 of the initialization transistor T4 is connected to one end Cst1 of the storage capacitor Cst and the gate electrode G1 of the driving transistor T1 via the drain electrode D3 of the compensation transistor T3. The initialization transistor T4 is turned on according to the front scan signal Sn-1 received through the front scan line 152 to transmit the initialization voltage to the gate electrode G1 of the driving transistor T1, and then initializes the gate voltage Vg of the gate electrode G1 of the driving transistor T1.

[0112] The gate electrode G5 of the operation control transistor T5 is connected to the light-emitting control line 153a. The source electrode S5 of the operation control transistor T5 is connected to the drive voltage line 172. The drain electrode D5 of the operation control transistor T5 is connected to the source electrode S1 of the drive transistor T1 and the drain electrode D2 of the switching transistor T2.

[0113] The gate electrode G6 of the light-emitting control transistor T6 is connected to the light-emitting control line 153a. The source electrode S6 of the light-emitting control transistor T6 is connected to the drain electrode D1 of the driving transistor T1 and the source electrode S3 of the compensation transistor T3. The drain electrode D6 of the light-emitting control transistor T6 is electrically connected to the anode of the light-emitting diode OLD.

[0114] The operation control transistor T5 and the light-emitting control transistor T6 are simultaneously turned on according to the light-emitting control signal EM received through the light-emitting control line 153a. As a result, the drive transistor T1, connected via a diode, compensates for the drive voltage ELVDD, which is then transmitted to the light-emitting diode OLD.

[0115] The gate electrode G7 of bypass transistor T7 is connected to bypass control line 158. The source electrode S7 of bypass transistor T7 is connected to the drain electrode D6 of light-emitting control transistor T6 and the anode of light-emitting diode OLD. The drain electrode D7 of bypass transistor T7 is connected to initialization voltage line 192 and the source electrode S4 of initialization transistor T4.

[0116] The other end of the storage capacitor Cst, Cst2, is connected to the drive voltage line 172, and the cathode of the light-emitting diode OLD is connected to the common voltage line 741 that transmits the common voltage ELVSS.

[0117] The configuration of seven transistors, including bypass transistor T7, and one capacitor has been described in this specification, but the invention is not limited thereto. For example, the number of transistors and the number of capacitors can be modified in various ways.

[0118] The following text will refer to Figure 5 With the above Figure 4 The planar structure of a display device according to an exemplary embodiment of the present invention will be described in detail below.

[0119] The display device according to this embodiment can apply a scan signal Sn, a front scan signal Sn-1, a light emission control signal EM, and a bypass signal BP to a pixel, respectively. The display device includes a scan line 151a, a front scan line 152, a light emission control line 153a, and a bypass control line 158 extending along the row direction. Additionally, it includes a data line 171 and a drive voltage line 172 that intersect the scan line 151a, the front scan line 152, the light emission control line 153a, and the bypass control line 158, and respectively apply a data signal Dm and a drive voltage ELVDD to the pixel. An initialization voltage line 192 that transmits an initialization voltage Vint may have a shape that bends multiple times along the row direction. The initialization voltage Vint transmitted from the initialization voltage line 192 can be transmitted to a compensation transistor T3 via an initialization transistor T4.

[0120] The pixel includes a driving transistor T1, a switching transistor T2, a compensation transistor T3, an initialization transistor T4, an operation control transistor T5, a light emission control transistor T6, a bypass transistor T7, a storage capacitor Cst, and a light-emitting diode (OLD). The OLD includes a first electrode 191, a light-emitting layer 370, and a second electrode 270.

[0121] The channels of the driving transistor T1, the switching transistor T2, the compensation transistor T3, the initialization transistor T4, the operation control transistor T5, the light-emitting control transistor T6, and the bypass transistor T7 are disposed in a semiconductor layer 131 connected thereto. The semiconductor layer 131 may have various curved shapes. For example, the semiconductor layer 131 may be patterned as separate portions. However, the invention is not limited thereto.

[0122] Semiconductor layer 131 includes a channel doped with N-type or P-type impurities. Additionally, semiconductor layer 131 includes source-doped regions and drain-doped regions formed on opposite sides of the channel, each having a higher doping concentration than the doping concentration of the impurities doped in the channel. In this embodiment, the source-doped regions and drain-doped regions correspond to the source electrode and drain electrode, respectively. The source electrode and drain electrode formed on semiconductor layer 131 can be formed by doping only the corresponding regions of semiconductor layer 131. Alternatively, the region between the source electrode and drain electrode of different transistors in semiconductor layer 131 can also be doped; therefore, the source electrode and drain electrode can be electrically connected.

[0123] The channels included in the semiconductor layer 131 may include the driving channel 131a included in the driving transistor T1, the switching channel 131b included in the switching transistor T2, the compensation channel 131c included in the compensation transistor T3, the initialization channel 131d included in the initialization transistor T4, the operation control channel 131e included in the operation control transistor T5, the light emission control channel 131f included in the light emission control transistor T6, and the bypass channel 131g included in the bypass transistor T7.

[0124] The driving transistor T1 includes a driving channel 131a, a driving gate electrode 155a, a driving source electrode 136a, and a driving drain electrode 137a. The driving channel 131a is curved and may have a tortuous or zigzag shape. For example, the driving channel 131a may be bent multiple times. As another example, the driving channel 131a may have a "U" shape.

[0125] The drive gate electrode 155a overlaps with the drive channel 131a. The drive source electrode 136a and the drive drain electrode 137a are positioned adjacent to each other on the drive channel 131a. The drive gate electrode 155a is connected to the drive connection member 174 through the drive contact hole 61.

[0126] The switching transistor T2 includes a switching channel 131b, a switching gate electrode 155b, a switching source electrode 136b, and a switching drain electrode 137b. The switching gate electrode 155b (which is the portion extending downward from the scan line 151a) overlaps with the switching channel 131b. The switching source electrode 136b and the switching drain electrode 137b are positioned adjacent to each other on the sides of the switching channel 131b. The switching source electrode 136b is connected to the data line 171 through a switching contact hole 62.

[0127] The compensation transistor T3 includes a compensation channel 131c, a compensation gate electrode 155c, a compensation source electrode 136c, and a compensation drain electrode 137c. The compensation gate electrode 155c may be a protrusion extending from the scan line 151a. For example, the compensation gate electrode 155c may extend upward from the scan line 151a. The compensation gate electrode 155c overlaps with the compensation channel 131c. The compensation source electrode 136c and the compensation drain electrode 137c may be disposed on opposite sides of the compensation channel 131c. The compensation drain electrode 137c is connected to the drive connection member 174 via a compensation contact hole 63.

[0128] The initialization transistor T4 includes an initialization channel 131d, an initialization gate electrode 155d, an initialization source electrode 136d, and an initialization drain electrode 137d. The initialization gate electrode 155d may be a protrusion extending from the previous scan line 152. For example, the initialization gate electrode 155d may extend downward from the previous scan line 152. The initialization gate electrode 155d overlaps with the initialization channel 131d. The initialization source electrode 136d and the initialization drain electrode 137d are positioned adjacent to each other on the sides of the initialization channel 131d. The initialization source electrode 136d is connected to the initialization connection member 175a via an initialization contact hole 64.

[0129] The operation control transistor T5 includes an operation control channel 131e, an operation control gate electrode 155e, an operation control source electrode 136e, and an operation control drain electrode 137e. The operation control gate electrode 155e (which is part of the light emission control line 153a) overlaps with the operation control channel 131e. The operation control source electrode 136e and the operation control drain electrode 137e are positioned adjacent to each other on the sides of the operation control channel 131e. The operation control source electrode 136e is connected to a portion of the drive voltage line 172 through an operation control contact hole 65.

[0130] The light-emitting control transistor T6 includes a light-emitting control channel 131f, a light-emitting control gate electrode 155f, a light-emitting control source electrode 136f, and a light-emitting control drain electrode 137f. The light-emitting control gate electrode 155f (which is part of the light-emitting control line 153a) overlaps with the light-emitting control channel 131f. The light-emitting control source electrode 136f and the light-emitting control drain electrode 137f are positioned adjacent to each other on the sides of the light-emitting control channel 131f. The light-emitting control drain electrode 137f is connected to the light-emitting control connection member 179 through a light-emitting control contact hole 66.

[0131] The bypass transistor T7 includes a bypass channel 131g, a bypass gate electrode 155g, a bypass source electrode 136g, and a bypass drain electrode 137g. The bypass gate electrode 155g (which is part of the bypass control line 158) overlaps with the bypass channel 131g. The bypass source electrode 136g and the bypass drain electrode 137g are positioned adjacent to each other on the bypass channel 131g. The bypass source electrode 136g is connected to the light-emitting control connection member 179 through a light-emitting control contact hole 66. The bypass drain electrode 137g is directly connected to the initialization source electrode 136d.

[0132] The driving source electrode 136a of the driving transistor T1 is connected to the switching drain electrode 137b and the operation control drain electrode 137e. The driving drain electrode 137a is connected to the compensation source electrode 136c and the light emission control source electrode 136f.

[0133] The storage capacitor Cst includes a first storage electrode 155a and a second storage electrode 156, with a second gate insulating layer 142 disposed between the first storage electrode 155a and the second storage electrode 156. The first storage electrode 155a corresponds to the driving gate electrode 155a. The second storage electrode 156 extends from the storage line 154a, occupies a larger area than the driving gate electrode 155a, and covers the driving gate electrode 155a. For example, the second storage electrode 156 completely covers the driving gate electrode 155a. The second gate insulating layer 142 becomes a dielectric, and the storage capacitance is determined by the charge charged at the storage capacitor Cst and the voltage between the first storage electrode 155a and the second storage electrode 156. By using the driving gate electrode 155a as the first storage electrode 155a, the storage capacitor Cst can be formed in a space that becomes narrower due to the driving channel 131a occupying a large area in the pixel.

[0134] The first storage electrode 155a (which is the drive gate electrode 155a) is connected to one end of the drive connection member 174 through the drive contact hole 61 and the storage opening 51. The storage opening 51 is an opening formed in the second storage electrode 156.

[0135] The drive connection member 174 and the data line 171 are substantially parallel to each other and disposed on the same layer. The other end of the drive connection member 174 is connected to the compensation drain electrode 137c of the compensation transistor T3 and the initialization drain electrode 137d of the initialization transistor T4 via the compensation contact hole 63. The drive connection member 174 connects the drive gate electrode 155a, the compensation drain electrode 137c of the compensation transistor T3, and the initialization drain electrode 137d of the initialization transistor T4 to each other.

[0136] The second storage electrode 156 is connected to the drive voltage line 172 via the storage contact hole 69. The storage capacitor Cst can store the storage capacitance, which corresponds to the difference between the drive voltage ELVDD transmitted to the second storage electrode 156 via the drive voltage line 172 and the drive gate voltage of the drive gate electrode 155a.

[0137] The following text will refer to Figure 6 and Figure 7 and Figure 4 and Figure 5 Together, the cross-sectional structure of the display device according to this embodiment will be described in detail according to the stacking order. Since the operation control transistor T5 has a structure that is substantially the same as the stacking structure of the light-emitting control transistor T6, its detailed description can be omitted.

[0138] A buffer layer 111 is disposed on the substrate 110. The buffer layer 111 can block impurities from the substrate 110 during the crystallization process of forming polycrystalline silicon. Additionally, it can planarize one surface of the substrate 110 to reduce stress on the semiconductor layer disposed on the buffer layer 111. The buffer layer 111 may comprise an inorganic material, such as silicon nitride (SiN). x ) or silicon oxide (SiO) x ).

[0139] A semiconductor layer comprising a driving channel 131a, a switching channel 131b, a compensation channel 131c, an initialization channel 131d, an operation control channel 131e, a light emission control channel 131f, and a bypass channel 131g is disposed on a buffer layer 111.

[0140] A driving source electrode 136a and a driving drain electrode 137a are disposed on each side of the driving channel 131a. A switching source electrode 136b and a switching drain electrode 137b are disposed on each side of the switching channel 131b. A compensation source electrode 136c and a compensation drain electrode 137c are disposed on each side of the compensation channel 131c. An initialization source electrode 136d and an initialization drain electrode 137d are disposed on each side of the initialization channel 131d. An operation control source electrode 136e and an operation control drain electrode 137e are disposed on each side of the operation control channel 131e. A light emission control source electrode 136f and a light emission control drain electrode 137f are disposed on each side of the light emission control channel 131f. A bypass source electrode 136g and a bypass drain electrode 137g are disposed on each side of the bypass channel 131g.

[0141] The first gate insulating layer 141 is disposed on the semiconductor layer.

[0142] A scan line 151a, including a switching gate electrode 155b and a compensation gate electrode 155c, is disposed on the first gate insulating layer 141. Additionally, a pre-scan line 152, including an initialization gate electrode 155d, is disposed on the first gate insulating layer 141. Furthermore, a light emission control line 153a, including an operation control gate electrode 155e and a light emission control gate electrode 155f, is disposed on the first gate insulating layer 141. A bypass control line 158, including a bypass gate electrode 155g, and a first gate conductor, including a drive gate electrode (and a first storage electrode) 155a, are disposed on the first gate insulating layer 141.

[0143] The second gate insulating layer 142 is disposed on the first gate conductor and the first gate insulating layer 141. The first gate insulating layer 141 and the second gate insulating layer 142 may be, for example, silicon nitride (SiN). x ), silicon oxide (SiO) x )wait.

[0144] A second gate conductor, including a storage line 154a parallel to the scan line 151a and a second storage electrode 156 (which is a portion extending from the storage line 154a), is disposed on the second gate insulating layer 142.

[0145] An interlayer insulating layer 160 is disposed on the second gate insulating layer 142 and the second gate conductor. The interlayer insulating layer 160 may have a drive contact hole 61, a switch contact hole 62, a compensation contact hole 63, an initialization contact hole 64, an operation control contact hole 65, a light emission control contact hole 66, and a storage contact hole 69.

[0146] The data conductors, including data line 171, drive voltage line 172, drive connection member 174, initialization connection member 175a and light emission control connection member 179, are disposed on the interlayer insulating layer 160.

[0147] Data line 171 is connected to switch source electrode 136b via switch contact hole 62. One end of drive connection member 174 is connected to first storage electrode 155a via drive contact hole 61. The other end of drive connection member 174 is connected to compensation drain electrode 137c and initialization drain electrode 137d via compensation contact hole 63. Initialization connection member 175a is connected to initialization source electrode 136d via initialization contact hole 64. Light emission control connection member 179 is connected to light emission control drain electrode 137f via light emission control contact hole 66.

[0148] An insulating layer 180 is disposed on the data conductor and the interlayer insulating layer 160. Because the insulating layer 180 covers the data conductor and substantially makes one surface of the insulating layer 180 flat, the first electrode 191 can be formed on the insulating layer 180 without steps. The insulating layer 180 may have a thickness greater than the interlayer insulating layer 160, and may minimize the parasitic capacitance between the data conductor and the first electrode 191.

[0149] The insulating layer 180 may include organic materials, such as polyacrylate resin and polyimide resin, or a stacked film of organic and inorganic materials.

[0150] The first electrode 191 and the initialization voltage line 192 are disposed on the insulating layer 180. The light emission control connection member 179 is connected to the first electrode 191 through the pixel contact hole 81. The initialization connection member 175a is connected to the initialization voltage line 192 through the initialization voltage line contact hole 82.

[0151] An isolation wall 360 is disposed on the first electrode 191. The isolation wall 360 has an opening 361 that exposes the first electrode 191.

[0152] The isolation wall 360 may include organic materials, such as polyacrylate resins and polyimide resins, or silica-based inorganic materials.

[0153] The light-emitting layer 370 can be disposed on the first electrode 191.

[0154] The inorganic layer 350 may be disposed between the isolation wall 360 and the first electrode 191. Because the inorganic layer 350 according to the embodiment is similar to the reference... Figure 1 The inorganic layer 350 is described in the same way, so its detailed description will be omitted.

[0155] The application basis is explained in this specification. Figure 1 This embodiment describes the inorganic layer 350 of the present invention, but the invention is not limited thereto, and references can be made to this embodiment. Figure 2 and Figure 3 The constituent elements described are for the first electrode 191, the inorganic layer 350, and the isolation wall 360.

[0156] The second electrode 270 is disposed on the light-emitting layer 370. The second electrode 270 is also disposed on the isolation wall 360 and spans multiple pixels. A light-emitting diode (OLD) including the first electrode 191, the light-emitting layer 370, and the second electrode 270 can be formed.

[0157] Here, the first electrode 191 can be an anode (which is a hole injection electrode), and the second electrode 270 can be a cathode (which is an electron injection electrode). However, the embodiments of the present invention are not limited thereto. For example, according to a driving method of a display device, the first electrode 191 can be a cathode and the second electrode 270 can be an anode. Holes and electrons are injected into the light-emitting layer 370 from the first electrode 191 and the second electrode 270, respectively, and excitons are generated by coupling the injected holes and electrons. Light is emitted as the excitons fall back from the excited state to the ground state.

[0158] According to an exemplary embodiment of the present invention, since the light-emitting layer may include a structure surrounded by inorganic materials, it is possible to prevent performance degradation of the light-emitting layer due to degassing permeation.

[0159] The following text will refer to Figures 8 to 12 A display device according to an exemplary embodiment of the present invention and a display device according to a comparative example are described. Figure 8 A cross-sectional view of the display device according to the comparative example is illustrated. Figure 9A A diagram illustrating the light-emitting region according to an exemplary embodiment of the present invention is provided. Figure 9B An image illustrating the luminescent region according to an exemplary embodiment of the present invention. Figure 10A A diagram illustrating the luminescent region based on the comparative example is provided. Figure 10B Images of the luminescent regions based on comparative examples are illustrated. Figure 11 An image illustrating the luminescent region according to an exemplary embodiment of the present invention. Figure 12Images of the luminescent regions based on comparative examples are illustrated. The luminescent regions mentioned in this paper are those formed by the luminescent layer.

[0160] First, refer to Figure 8 The display device according to the comparative example does not include an inorganic layer, and therefore, the light-emitting layer 370 may have difficulty preventing the penetration of external impurities. For example, when heat and / or light energy is applied to the display device, impurities may be generated from the insulating layer 180, the isolation wall 360, etc., and the generated impurities may diffuse (in... Figure 8 (A schematic diagram of impurity diffusion is shown in dashed lines). Impurities diffuse and are absorbed toward the interface between the second electrode 270 and the light-emitting layer 370, causing the light-emitting layer 370 to shrink. Therefore, the light-emitting area of ​​the display device can be reduced, and its brightness can be decreased. Consequently, the quality of the display device can be degraded.

[0161] refer to Figure 9A and Figure 9B As can be seen, according to an exemplary embodiment of the present invention, light is emitted in the light-emitting region indicated by the dashed line. Conversely, refer to... Figure 10A and Figure 10B It can be seen that, compared with the light-emitting area designed in the actual manufacturing process (which corresponds to...), Figure 9A and Figure 9B (The dashed line indicates the luminescent area in the middle) Compared to the comparative example, the luminescent layer is reduced in the reduced area, and the luminescent layer emits light in the reduced area.

[0162] Additionally, refer to Figure 11 According to an exemplary embodiment of the present invention, a drawn image is illustrated relative to a specific element (e.g., oxygen in a luminescent region). Figure 12 The diagram illustrates a plotted image relative to a specific element (e.g., oxygen) within a luminescent region based on a comparative example. (Comparison) Figure 11 and Figure 12 Therefore, it can be seen that, according to Figure 12 In the comparative example, a large amount of oxygen (O) was detected in the light-emitting layer, appearing black near the edge (B). This indicates that a large amount of impurities released from the insulating layer and the isolation wall were drawn into the edge of the light-emitting layer. As a result, shrinkage of the light-emitting layer can occur as described above. However, in the embodiment of this invention... Figure 11 In this case, it is evident that oxygen, which appears as black near the edge (A) of the luminescent layer, is difficult to detect, thus confirming the fact that impurities may be prevented from being absorbed into the luminescent layer.

[0163] According to this embodiment, the light-emitting layer can be surrounded by a first electrode, an inorganic layer, and a second electrode, thereby reducing shrinkage caused by impurities generated by thermal and / or light energy. Therefore, a display device with an increased light-emitting area and display quality can be provided.

[0164] Although the invention has been shown and described with reference to exemplary embodiments thereof, it will be apparent to those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims

1. A display device, the display device comprising: First electrode; A second electrode, which overlaps with the first electrode; A light-emitting layer is disposed between the first electrode and the second electrode; An isolation wall that overlaps with a portion of the first electrode; and An inorganic layer is disposed between the isolation wall and the first electrode. The inorganic layer covers the end of the first electrode, and The thickness of the inorganic layer is greater than the thickness of the light-emitting layer.

2. The display device according to claim 1, wherein The light-emitting layer is surrounded by the first electrode, the inorganic layer, and the second electrode.

3. The display device according to claim 1, wherein... The side surface of the light-emitting layer contacts the side surface of the inorganic layer.

4. The display device according to claim 1, wherein The inorganic layer contacts the second electrode.

5. The display device according to claim 1, further comprising: A transistor disposed on a substrate; and An insulating layer is disposed on the transistor. The second electrode is in contact with the insulating layer.

6. A display device, the display device comprising: A transistor disposed on a substrate; An insulating layer disposed on the transistor; A first electrode is disposed on the insulating layer and electrically connected to the transistor; A second electrode, which overlaps with the first electrode; A light-emitting layer is disposed between the first electrode and the second electrode; and An inorganic layer is disposed between the first electrode and the second electrode. The inorganic layer contacts the light-emitting layer and covers the end of the first electrode, and The thickness of the inorganic layer is greater than the thickness of the light-emitting layer.

7. The display device according to claim 6, wherein The second electrode includes a first region overlapping the first electrode and a second region corresponding to the remaining portion, and The distance from the upper surface of the substrate to the upper surface of the first region of the second electrode is greater than the distance from the upper surface of the substrate to the upper surface of the second region of the second electrode.

8. The display device according to claim 6, wherein The light-emitting layer is surrounded by the first electrode, the inorganic layer, and the second electrode, and The end of the light-emitting layer contacts the end of the inorganic layer.

9. A display device, the display device comprising: First electrode; A second electrode, which overlaps with the first electrode; A light-emitting layer is disposed on the first electrode; An isolation wall that overlaps with a portion of the first electrode; and An inorganic layer is disposed between the isolation wall and the first electrode. The inorganic layer includes an opening that overlaps with the isolation wall, and The thickness of the inorganic layer is greater than the thickness of the light-emitting layer.

10. The display device according to claim 9, wherein The light-emitting layer is surrounded by the first electrode, the inorganic layer, and the second electrode.

Images