Optical sensor package

Abstract

Embodiments of the present disclosure relate to optical sensor packages. The present disclosure relates to an optical sensor package having a first assembly and a second assembly, the first assembly and the second assembly having a sealant extending between the first assembly and the second assembly and coupling the first assembly and the second assembly. The first assembly includes a first substrate, a first die on the first substrate, a transparent material on the first die, and an infrared filter on the transparent material. The second assembly includes a second substrate, a second die on the second substrate, a transparent material on the second die, and an infrared filter on the transparent material. Holes are formed through the sealant in alignment with the first die and the second die. The first die is configured to transmit light through one hole, wherein the light is reflected from an object to be detected and received at the second die through another one of the holes.

Description

Technical Field

[0001] This disclosure relates to an optical sensor package, and more specifically, to an optical sensor package having a resin surrounding the package. Background Technology

[0002] Optical sensor packages are known for converting light into electronic signals. Typically, an optical sensor package is a cavity package having a cap coupled to a substrate and a cavity or space between the cap and a semiconductor device on the substrate. The cap includes openings such that a light-emitting die on the substrate emits light through one opening in the cap, and the light is received by a light-receiving die on the substrate through another opening in the cap. In operation, an object to be detected by the optical sensor interrupts or reflects the light from the light-emitting die, resulting in a difference in the amount or intensity of light received at the light-receiving die compared to operating conditions where no object is present. When an object is present, the reflection of light causes a change in the amount or characteristics of the light received at the light-receiving die (e.g., intensity, etc.). This change in the light results in a change in the electronic signal corresponding to the detected light. The instrument reads the change in the electronic signal as a result of the object's reflection to determine the object's distance or proximity relative to the sensor package, and other characteristics.

[0003] However, known optical sensor packages have several drawbacks. For example, the presence of a cap and cavity in the package results in a larger package size, which contradicts the general market trend toward smaller electronic devices. In other words, space is at a premium in modern electronic devices, making larger packages clearly undesirable. In some applications, due to the form factor of the electronic device design, a low-profile optical sensor package is required, making it impossible to use a larger package. Furthermore, the attachment of the cap to the substrate results in a gluing process during manufacturing, which increases costs. Moreover, over time, the glued or coupled interface between the cap and the substrate often experiences cracking or other damage. The materials of the cap and the substrate are often different and have different coefficients of thermal expansion. Thus, during repeated operating cycles of the package, in response to the heat generated during operation, the cap and substrate will expand and contract by different amounts, confining stress and strain at the cap-substrate interface. Over time, the forces acting on the cap-substrate interface can lead to cracking at the interface or even cap separation from the substrate, either of which can cause package failure or malfunction. Summary of the Invention

[0004] This disclosure relates to an optical sensor package having an overmolded sealant (e.g., resin) sealing one or more components. More specifically, the optical sensor package includes a light-emitting component and a light-receiving component, with resin on the light-emitting component and the light-receiving component. The light-emitting component includes a substrate and a semiconductor die on the substrate, for example, the semiconductor die may be a die such as one having one or more light-emitting diodes (“LEDs”), or a vertical-cavity surface-emitting laser (“VCSEL”) die. A transparent resin is on the light-emitting die, and an infrared filter is on the transparent resin. The light-receiving component includes a substrate and a semiconductor die on the substrate, the semiconductor die may be a light-receiving die, such as a die including a photodiode. The light-receiving component also includes transparent resin on the light-receiving die and an infrared filter on the transparent resin.

[0005] A molded overmolded resin seals the light-emitting component and the light-receiving component to couple the light-emitting component to the light-receiving component. In one example, the resin is coplanar with the surfaces of the substrates of both the light-emitting component and the light-receiving component, and the resin extends between the light-emitting component and the light-receiving component. A first aperture is formed in the resin aligned with the light-emitting die, and a second aperture is formed in the resin aligned with the light-receiving die. Thus, during operation, light is emitted by the light-emitting die and received by the light-receiving die, which converts the light incident on the light-receiving die into an electronic signal. As described in more detail below, using a molded overmolded resin instead of a cap reduces or eliminates the aforementioned defects of known cavity packages. Attached Figure Description

[0006] To better understand the embodiments, reference is now made to the accompanying drawings by way of example only. In the drawings, the same reference numerals denote similar elements or actions. In some figures, structures are drawn to scale precisely. In other figures, the dimensions and relative positions of elements are not necessarily drawn to scale. For example, the dimensions, shapes, and angles of various elements may be enlarged and positioned in the drawings to improve readability.

[0007] Figure 1 This is a plan view of the first surface of an embodiment of an optical sensor package having a light-emitting component and a light-receiving component sealed with resin, according to the present disclosure.

[0008] Figure 2 It is along in Figure 1 The line AA in Figure 1 A cross-sectional view of the optical sensor package in the image.

[0009] Figure 3 yes Figure 1 An enlarged view of a portion of the substrate of the light-emitting component of an optical sensor package.

[0010] Figure 4 It is along in Figure 1 The line BB in the middle, in Figure 1 Cross-sectional view of the optical sensor package in the image.

[0011] Figure 5 yes Figure 1 A plan view of the second surface of the optical sensor package.

[0012] Figures 6A to 6I This is a cross-sectional view of an embodiment of a method for assembling an optical sensor package using multiple components sealed with resin, according to the present disclosure.

[0013] Figure 7 This is a cross-sectional view of an alternative embodiment of a sensor package consisting of a single component sealed with resin, according to the illustrations of this disclosure.

[0014] Figure 8 This is a schematic representation of an embodiment of an electronic device including an optical sensor package according to the present disclosure. Detailed Implementation

[0015] Figures 1 to 5 Various views of one or more embodiments of package 100 are illustrated. Package 100 may be an optical sensor package. Reference Figures 1 to 5 The package 100 includes a first surface 102 (which may be referred to herein as the upper surface or top surface) and a second surface 104 (which may be referred to herein as the lower surface or bottom surface) opposite the first surface 102. The package 100 also includes a first component 106 and a second component 108. As described herein, the first component 106 is coupled to the second component 108 by a sealing material (which may be a resin material and may be referred to herein as resin 110), the encapsulation material being overmolded onto components 106, 108 to at least partially seal components 106, 108 and form the package 100. Components 106, 108 may also be referred to herein as a package, sub-package, sub-component, system, subsystem, semiconductor device, semiconductor package, or other similar terms. Resin 110 may also be referred to herein as a sealant, molding compound, or overmolding resin, and other similar terms.

[0016] The resin 110 includes a first hole 112 extending through the resin 110 and a second hole 114 extending through the resin 110. In other words, the first hole 112 extends from the first surface 102 of the package 100 through the resin 110 to the first component 106, and the second hole 114 extends from the first surface of the package 110 through the resin 110 to the second component 108.

[0017] The resin 110 also includes a first edge 120 and a second edge 122 extending around the first hole 112, and a third edge 124 and a fourth edge 126 extending around the second hole 114. Figures 1 to 2 As shown, the first edge 120 and the third edge 124 are coplanar with the first surface 102 of the package 100. The second edge 122 is coplanar with the first component 106, and the fourth edge 126 is coplanar with the second component 108.

[0018] In one embodiment, the first hole 112 has a size 116 between the outermost points of the second edge 122 of the resin 110, and the second hole 114 has a size 118 between the outermost points of the fourth edge 126 of the resin 110, wherein size 116 is smaller than size 118. Figure 1 In the embodiment shown (plan view of package 100), the first surface 102 of package 100 is illustrated. Each of the holes 114, 116 is circular, and therefore dimensions 116, 118 can be diameters. In other embodiments, holes 112, 114 have different geometries, such as squares or rectangles, in which case dimensions 116, 118 can be lengths or widths. In yet another embodiment, dimensions 116, 118 are the same, or dimension 116 is larger than dimension 118. Thus, the size and shape of each hole 112, 114 can be selected according to design preferences.

[0019] A first sidewall 128 (referred to herein as first sidewall surface 128) extends between a first edge 120 and a second edge 122, and a second sidewall 130 (referred herein as second sidewall surface 130) extends between a third edge 124 and a fourth edge 126. In one embodiment, sidewalls 128 and 130 are at an angle of 15 degrees or approximately 15 degrees to a horizontal plane. In other words, sidewalls 128 and 130 are transverse to the first surface 102 of the package 100 (e.g., at an angle not equal to 0 degrees and not equal to 90 degrees to the first surface 102).

[0020] The angles of the sidewalls 128 and 130 can be selected according to design preferences. For example, in another embodiment, the sidewalls 128 and 130 are at an angle between 3 and 45 degrees, or between 3 and 30 degrees, or between 3 and 20 degrees, or between 5 and 15 degrees to the horizontal plane. In yet another embodiment, the sidewalls 128 and 130 are at an angle between 0 and 90 degrees to the horizontal plane. In one embodiment, the sidewalls 128 and 130 help to disperse light from component 106 and focus light onto component 108. Hole 112 (or resin 110 defining hole 112) includes: a dimension 116, which may be referred to as a first dimension 116, and a second dimension 132 between the outermost points of the first edge 120; and hole 114 (or resin 110 defining hole 114) includes a dimension 118, which may be referred to as a first dimension 118, and a second dimension 134 between the outermost points of the third edge 124. In some embodiments, the second dimension 132 of the first hole 112 is larger than the first dimension 116 of the first hole 112, and the second dimension 134 of the second hole 114 is larger than the first dimension 118 of the second hole 114. Furthermore, the second dimension 134 of the second hole 114 may be larger than the second dimension 132 of the first hole 112.

[0021] In one or more embodiments, the sidewalls 128, 130 are flat and planar, and therefore the size of the first hole 112 increases continuously from a first size 116 to a second size 132, and similarly, the size of the second hole 114 increases continuously from a first size 118 to a second size 134. In other words, the height of the resin 110 relative to the components 106, 108 increases continuously from the components 106, 108 across the sidewalls 128, 130 to the first surface 102 of the encapsulation 100. In one or more embodiments, the distance from the first edge 120 of the resin 110 to the outer edge 136 of the encapsulation 100 is less than the distance from the second edge 122 of the resin 110 to the outer edge 136 of the encapsulation 100. Similarly, the distance from the third edge 124 of the resin 110 to the outer edge 136 of the encapsulation 100 is less than the distance from the fourth edge 126 of the resin 110 to the outer edge 136 of the encapsulation 100. In other embodiments, the sidewalls 128, 130 may be curved, may include multiple chamfered or curved surfaces formed by etching, or may have a stepped configuration. Furthermore, Figure 1 The illustration shows that in one embodiment, the package 100 is rectangular; however, it should be understood that in other embodiments, the package 100 may be square, circular, or other geometric or irregular shapes.

[0022] Figure 2 It is along in Figure 1 A cross-sectional view of the package 100 of line AA in the diagram. Figure 2Further illustrated, resin 110 includes a portion 138 extending between and coupled to both components 106 and 108. Each of components 106 and 108 includes corresponding sidewalls 140 and 142. In one embodiment, the first component 106 includes four sidewalls 140, and the second component 108 also includes four sidewalls 142. Figure 5 This is a plan view of the second surface 104 of the package 100. Figure 5 The illustration shows resin 110 located on all sidewalls of components 106 and 108. (Back) Figure 2 A portion 138 of resin 110 extends between and contacts the sidewalls 140 and 142 of components 106 and 108, such that the portion 138 of resin 110 bonds components 106 and 108 together. Alternatively, resin 110 is a single, continuous layer of material that may, individually or in combination, comprise one or more of thermosetting resins, thermoplastic materials, molding compounds, or epoxy resins, and one or more phenolic curing agents, silica, catalysts, pigments, and release agents. Thus, resin 110 seals components 106 and 108 using portion 138, wherein portion 138 is preferably a single, continuous, integral portion of resin 110 that extends along the respective lengths of components 106 and 108 from a first surface 102 of encapsulation 100 to a second surface 104 of encapsulation 100 (see [link to encapsulation description]). Figure 5 ).

[0023] The first component 106 also includes a substrate 144; a first die 146 on the substrate 144; a transparent material (e.g., transparent resin 148) on the die 146 and the substrate 144; and a first filter 150 on the transparent resin 148. Resin 110 is located on the first filter 150 of the first component 106 and contacts the transparent resin 148 and the substrate 144 at a sidewall 140 of the first component 106. The second component 108 also includes a substrate 152; a second die 154 on the substrate 152; transparent resin 148 on the second die 154 and the substrate 152; and a second filter 156 on the transparent resin 148 of the second component 108. Resin 110 is located on the second filter 156 of the second component 108 and contacts the transparent resin 148 and the substrate 152 at a sidewall 142 of the second component 108. Details of substrates 144 and 152 will be described with reference to... Figure 3 and Figure 4 To describe in more detail.

[0024] In one or more embodiments, the first component 106 is a light-emitting component, and the second component 108 is a light-receiving component. Thus, the first die 146 of the first component 106 is configured to emit light, which may be light in the visible light spectrum, light in the infrared light spectrum, or light in the ultraviolet light spectrum, etc. In some embodiments, the first die 106 may be an LED die or a vertical-cavity surface-emitting laser (VCSEL) die.

[0025] In embodiments where the first die 146 is an LED die, the first die 146 may include a substrate comprising one or more of aluminum, gallium, arsenic, nitride, silicon, and phosphor, as well as other available substrate materials. In some embodiments, a dopant is added to the substrate to increase conduction through the substrate. It should be understood that the composition of the first die 146 can be selected based on the desired output, i.e., the color or type of light emitted by the die 146. Typically, the LED die preferably includes a first portion having a dopant that results in the generation of additional negatively charged particles (or electrons) in the first portion, which is referred to as an N-type material, portion, or segment of the first die 146. The LED die also includes a second portion having a dopant that results in the generation of additional holes (or positively charged particles) in the second portion, which is referred to as a P-type material, portion, or segment of the first die 146. The LED includes an N-type material bonded to the P-type material and has electrodes at each end, which allows conductivity through the die 146 in one direction.

[0026] The electrode corresponding to the N-type material is connected to a negative current, and the electrode corresponding to the P-type material is connected to a positive current. Free electrons in the N-type material are repelled by the negative current and attracted to the positive electrode. Holes in the P-type material move in the opposite direction (e.g., pulled towards the negative electrode by the positive current). When no current is applied, electrons in the N-type material settle into holes in the P-type material, preventing electricity from conducting through the LED die. However, when a sufficient current is applied as described above, electrons in the N-type material are removed from the holes in the P-type material and begin to move freely, and current flows across the diode.

[0027] Photons are a form of energy released by atoms. In some cases, this energy is visible as light. In an atom, electrons move in orbits around the nucleus, with electrons in different orbits having different amounts of energy. For an electron to change its orbit, an external force or energy source must alter its energy level. As described above, using an LED die, free electrons move across the diode and fall into holes in the P-type material, which involves lowering the energy to a lower orbit, in which case the electron releases energy as a photon. The amount of energy released depends on the type of material of the diode, with some types of materials releasing photons in the visible light spectrum and others releasing photons in the infrared or ultraviolet spectrum. Thus, when the first die 146 is an LED die, the first die 146 comprises one or more of the aforementioned materials, as well as certain dopants, such that electrons release energy as photons as they move across the die 146 and change their orbital energy levels within the die 146. The photons are emitted from the die 146 as light rays.

[0028] In one or more embodiments where the first die 146 is a VCSEL-type die, the die 146 may be a top-emitting VCSEL, although in other arrangements, the die 146 is a bottom-emitting VCSEL. Typically, the VCSEL die is configured to emit laser light and includes a substrate and two distributed Bragg reflectors (“DBRs”) parallel to the substrate. The substrate may include any material described above with respect to LED dies. The DBRs have one or more quantum wells for generating laser light between the DBRs. The DBRs consist of alternating layers of high and low refractive indices. The thickness of each layer is one-quarter of the laser wavelength in the material, resulting in a reflectivity of 95-99% or higher. The VCSEL preferably uses high-reflectivity mirrors to balance the short axial length of the gain region.

[0029] Thus, in the case of a VCSEL-type die 146, the die 146 includes a first mirror and a second mirror, which can also be referred to as the upper mirror and the lower mirror. The upper mirror and the lower mirror are doped with p-type and n-type materials, as described above, thus forming a diode junction. In other structures, p-type and n-type regions can be embedded between the mirrors, which can eliminate power losses in the DBR structure. Quantum wells between layers can confine quasi-particles (typically electrons or holes) in a dimension perpendicular to the layer surface, while their movement in other dimensions is unrestricted. This confinement produces quantum effects, altering the density state of the confined particles. A quantum well is a thin layer of semiconductor material embedded between other semiconductor layers with wider band gaps. The semiconductor material is selected for the layers such that electrons available for conduction in the intermediate layer have lower energies than electrons in the outer layers, creating an energy tilt or well that confines electrons in the intermediate layer.

[0030] The thickness of the interlayer can be between 5 and 20 nanometers, which can be achieved by molecular beam epitaxy or metal-organic chemical vapor deposition. This thickness is similar to the wavelength of the electrons confined within the interlayer, thus altering the electron behavior because the electrons are confined in a 2D plane rather than in a bulk 3D sample. Thus, during operation, current is supplied to the p-type doped DBR, which flows through the quantum well to the n-type doped DBR. As described above, conduction through the quantum well causes electrons in the interlayer to find holes, which release photons. Because the electrons are confined within the interlayer, they find holes more easily than in other types of diodes. The released photons are largely (up to 99.9% in one or more embodiments) reflected back into die 146 by the DBR, with a small fraction of the released photons escaping the die perpendicular to the main surface of die 146. The light emitted from the VCSEL die is typically circular, where the larger output aperture of the VCSEL (e.g., the main surface of die 146) produces a lower divergence angle, allowing the use of the VCSEL in the optical path without the need for additional optical components.

[0031] In another embodiment, die 146 is an edge-emitting VCSEL die, including a cleaved section of semiconductor material used as a reflector. In this case, as with the VCSEL die described above, light oscillates parallel to the layer and escapes at the side of the die, rather than at the top or bottom surface of the die. Although die 146 is described as including only a single LED or a single VCSEL arrangement, it should be understood that in other embodiments, die 146 includes an LED array or VCSEL array within die 146.

[0032] The second die 154 can be a sensor die or a photosensor (such as a photodiode or photodiode array) that converts light into current. Current is generated when photons emitted by the light-emitting element 106 and the die 146 are absorbed by the photodiode. The photodiode includes a pn junction (e.g., a p-type doped material layer connected to an n-type doped material layer). In one or more embodiments, an intrinsically undoped layer is located between the n-layer and the p-layer. When the die 154 is not in operation (e.g., no light shines on the die 154), electrons from the n-doped region fill holes in the p-type region at the junction between the p-type and n-type regions. This prevents current from flowing through the die 154 and forms a so-called depletion region or depletion area of ​​the die 154. Then, when light (photons) from the light-emitting element 106 shines on the die 154, they release energy into the depletion region, which removes electrons from the n-type region from the holes in the p-type region. Electrons then flow to the positive electrode of die 154, and holes flow to the negative electrode of die 154, generating a measurable photocurrent. The intensity of light incident on die 154 will release different amounts of energy back to die 154 (e.g., more light or stronger light equals more energy released), and thus, the measurable photocurrent corresponds to the intensity of light incident on die 154. The second die 154 may comprise one or more of silicon, germanium, indium, gallium, arsenide, and phosphide, wherein the material composition of the second die 154 can be selected according to design specifications.

[0033] In one embodiment, package 100 is a time-of-flight sensor. During operation, light emitted by a first die 146 is reflected by an object in the optical path of the first die 146 and received by a second die 154. As described herein, the light received by the second die 154 is converted into an electronic signal. The distance of the object relative to package 100 can be calculated using the difference between the time the light is emitted by the first die 146 and the time the light is received by the second die 154. In other embodiments, package 100 is configured to determine other properties of the object, such as velocity (e.g., the change in distance of the object relative to package 100 over a period of time) or acceleration (e.g., the change in velocity of the object relative to package 100 over a period of time).

[0034] Figure 3 This is an enlarged view of a portion of the substrate 152 of the second component 108. In this embodiment, the substrate 152 of the second component 108 is the same as or similar to the substrate 144 of the first component 106, and therefore, repeated descriptions have been omitted. In other embodiments, substrates 144 and 152 are different. In some embodiments, substrate 152 is a pad grid array (“LGA”) type substrate. Figure 3As shown, the LGA substrate is similar to a flip-chip ball grid array (“BGA”) substrate, except that the LGA substrate typically does not include solder balls or spheres. LGA and BGA substrates can also be referred to as printed circuit board (“PCB”) substrates, which include a dielectric layer or a metal and dielectric layer. Thus, LGA and BGA substrates have similar structures, except for the contact contacts used for the substrate. The LGA substrate can be a PCB type including flat pad gate contacts, while the BGA substrate can be a PCB type including solder balls coupled to the flat pad gate contacts. Substrate 152 includes a first surface 158 and a second surface 160 opposite to the first surface 158, having die pads 162 and contact pads 164, wherein, as... Figure 2 As shown, contact pad 164 is exposed on the second surface 104 of package 100.

[0035] An LGA substrate is a surface mount package substrate for integrated circuits. By forming interconnects between one or more contact pads 164 and a PCB using solder paste during board-level assembly processes, the LGA substrate can be coupled to a larger electronic device substrate, such as another PCB. This results in a low clearance height, approximately 0.06 mm to 0.10 mm or less, depending on the solder paste volume and PCB geometry. Optionally, the LGA can be housed in a socket on the PCB. In the illustrated embodiment, substrate 152 includes four layers of dielectric material 166, while in other embodiments, substrate 152 includes only two layers of dielectric material. The number of dielectric material layers 166 in substrate 152 can be selected, but a two-layer substrate 152 for lower power, lower performance applications to reduce package size is preferred, or a four-layer substrate 152 for higher power, higher performance applications is preferred. In various embodiments, substrate 152 (and substrate 144 of the first component 106) can have any number of layers, which may include any number of dielectric layers, metallization or conductive layers, or any other layers suitable for use as a substrate.

[0036] In the illustrated embodiment, die pad 162 occupies at least a portion of one layer 166 of substrate 152, and contact pad 164 occupies another layer 166 of substrate 152. In other embodiments, for example, where substrate 152 comprises two layers, die pad 162 and contact pad 164 may occupy less than the thickness of each layer. In embodiments where substrate 152 is a two-layer LGA substrate, the thickness 168 of substrate 152 is preferably between 80 and 100 micrometers. In embodiments where substrate 154 is a four-layer LGA substrate, the thickness 168 may be between 160 and 200 micrometers (or more or less). Figure 2As shown, the second die 154 is coupled to the die pad 162 using solder 170 or other die attachment material. Thus, the second die 154 is electrically connected to the die pad 162, which, for example, may be electroless gold plating on electroless nickel. Alternatively, the die pad 162 may comprise one or more of gold, nickel, silver, tin, copper, or lead, and alloys thereof. The die pad 162 is electrically connected to the contact pad 164 via conductive traces 172 (e.g., metallization layers, conductive vias, etc.) passing through the substrate 152, and the contact pad 164 may have a similar composition to the die pad 162. The traces 172 may extend along layer 166 and through layer 166 between the die pad 162 and the contact pad 164. Thus, the second die 154 can be electrically connected to a separate PCB or other device during final assembly via the solder 170, the die pad 162, the traces 172, and the contact pad 164.

[0037] In other embodiments, substrate 154 may be a BGA substrate having a similar composition to the LGA substrate described above, except that solder balls or balls are coupled to contact pads 164 for mounting on a PCB or other device during board-level assembly processes. In some embodiments, substrate 154 may be or include a PCB, including a single-sided PCB (one metal layer), a double-sided PCB (two metal layers on either side of a substrate or dielectric layer), or a multilayer PCB (outer and inner metal layers alternating with a substrate or dielectric layer). The substrate or dielectric material of such a PCB substrate may be FR-2 (phenolic paper or phenolic cotton paper impregnated with phenolic resin), FR-4 (woven glass fiber cloth impregnated with epoxy resin), an aluminum or insulating metal substrate covered with a thermally conductive thin dielectric material, or a flexible substrate, such as polyimide foil or polyimide-fluoropolymer composite foil. Other PCB substrate materials may also be used, including impregnated paper and other variations of woven glass fiber impregnated with epoxy resin, as well as polyimide.

[0038] Figure 4 It is along in Figure 1 A cross-sectional view of the package 100 of line BB in the image, which illustrates the second component 108 in more detail. In an embodiment, the cross-sectional view of the first component 106 is consistent with that in the image. Figure 4 The cross-sectional view of the second component 108 is the same, and therefore, repeated descriptions have been omitted. The second component 108 includes a second die 154 on a substrate 152, and more specifically, a second die 154 on a die pad 164 of the substrate 152. The second die 154 includes a first surface 174 and a second surface 176 opposite to the first surface 174. The second die 154 also includes a contact 178, which, in an embodiment, is located between the first surface 174 and the second surface 176 of the die 154 and is coplanar with the first surface 174 of the second die 154.

[0039] In other embodiments, contact 178 is located on a first surface 174 of the second die 154. Lead 180 is electrically connected between contact 178 of the second die 154 and second contact pad 182 of the substrate 152. In one or more embodiments, in a wire bonding process, lead 180 is bonded with solder to the second contact pad 182 of the substrate 152 and contact 178 of the second die 154. In other embodiments, lead 180 is an ink-printed lead formed from a paste containing entrained metal particles and printed along a sublimation layer, wherein sintering or heating cures the lead and removes the sublimation layer. Lead 180 may include one or more of gold, nickel, silver, tin, copper, or lead and alloys thereof. The second contact pad 182 of the substrate 152 is connected via a process similar to... Figure 3 The trace 172 in the trace is electrically connected to the third contact pad 184 of the substrate 152.

[0040] Figure 4 Further illustration shows that each of the contacts 162, 164, 182, 184 of the substrate 152 is located between the first surface 158 and the second surface 160 of the substrate 152, and each contact is coplanar with the corresponding surface 158, 160 of the substrate 152. In other embodiments, contacts 162, 164, 182, 184 are on the surfaces 158, 160 of the substrate. Thus, the second assembly 108 includes four substrate contacts 162, 164, 182, 184, wherein two contacts 162, 164 correspond to the second die 154, and two contacts 182, 184 correspond to the lead 180. The second die 154 is electrically connected to the contacts 182, 184 of the substrate 152 via the lead 180. It should be understood that the first assembly 106 similarly includes having the same... Figure 4 There are a total of four contacts arranged similarly to those shown in the second component 108.

[0041] Figure 5 A second surface 104 of the package 100 is shown. In an embodiment, the second surface 104 is the bottom or connection surface of the package 100. The package 100 includes components 106, 108, each component having a contact exposed on the second surface 104 of the package 100. For example, the first component 106 includes a first contact 186 and a second contact 188 coplanar with the second surface 104 of the package 100. Figure 2 As shown, contacts 186 and 188 of the first component 106 correspond to: die pads 192 inside the package 100 for the first die 146, and leads 190 coupled to the first die 146, and the contacts of the first component 106 are similar to contacts 182 of the second component 108. Thus, in some embodiments, the package 100 includes a total of eight contacts, with each component 106 and 108 having four contacts.

[0042] refer to Figure 4 and Figure 5 In one embodiment, package 100 has a dimension 194 from a first surface 102 to a second surface 104 of the package, which is equal to 400 micrometers or about 400 micrometers. Dimension 194 may also be referred to herein as the height or thickness of package 100. In other embodiments, dimension 194 ranges from 300 micrometers to 1 millimeter, and in yet another embodiment, dimension 194 ranges from 600 micrometers to 1 millimeter. In some embodiments, dimension 194 of package 100 is less than 1 millimeter. By comparison, known cavity optical sensor packages have a thickness of at least 1 millimeter or more, and more typically, a thickness between 1.2 and 1.5 millimeters. Therefore, the package of this disclosure is relatively small and has a low profile because eliminating cavities and caps in package 100 allows package 100 to have a lower profile relative to known cavity optical sensor packages. Furthermore, in one or more embodiments, package 100 has a length 196 and a width 198, wherein the length is 3 millimeters or about 3 millimeters. Similarly, in one or more embodiments where the package 100 has a square shape, the width 198 is also 3 mm or approximately 3 mm. In the illustrated embodiment, the length 196 is greater than the width 198, and therefore the length 196 can be between 3.1 mm and 3.3 mm, while the width 198 is 3 mm, resulting in a rectangular shape for the package. In an alternative embodiment, the length 196 is less than the width 198.

[0043] Figures 6A to 6I An embodiment of a method 200 for assembling an optical sensor package (e.g., package 100) according to the present disclosure is shown. Method 200 in... Figure 6A The diagram begins with substrate 202. Substrate 202 may be pre-assembled or manufactured such that it is ready for assembly without further modification. In one embodiment, substrate 202 is a two-layer LGA substrate. In other embodiments, substrate 202 is a four-layer LGA substrate, BGA substrate, or PCB. Substrate 202 includes a first surface 204 opposite to a second surface 206, wherein a first plurality of contact pads 208 are coplanar with the first surface 204, and a second plurality of contact pads 210 are coplanar with the second surface 206. The plurality of contact pads 208, 210 may be collectively referred to as contacts of substrate 202 or multiple contacts. As shown, contacts 208, 210 are located between the first surface 204 and the second surface 206 of substrate 202, and surface 212 of each contact 208, 210 is coplanar with the corresponding surface 204, 206 of substrate 202. In other embodiments, contacts 208, 210 are on surfaces 204, 206 of substrate 202.

[0044] Method 200 in Figure 6BThe die attachment process continues. More specifically, the first die 214 is attached to the substrate 202 using a die attachment material 216. In one embodiment, the die attachment material 216 is solder, while in other embodiments, the die attachment material is some other conductive or non-conductive adhesive, such as glue or tape. The first die 214 includes a first surface 218 and a second surface 220 opposite to the first surface 218. In the illustrated embodiment, the first surface 218 is spaced apart from the substrate 202 and faces away from the substrate 202, while the second surface 220 is adjacent to the first surface 204 of the substrate 202 and faces the substrate 202. The first die 214 also includes a contact 222, wherein the contact 222 is preferably located between the first surface 218 and the second surface 220 of the die 214. The surface 224 of the contact 222 is coplanar with the first surface 218 of the die 214. In other embodiments, the contact 222 is located on the first surface 218 of the die 214.

[0045] As described herein, in one embodiment, the first die 214 is a VCSEL or LED die. In an additional embodiment, the first die 214 is another type of light-emitting die. Alternatively, the first die 214 may be a photodiode die as described herein, or some other type of photodetector or light-receiving die. Furthermore, although... Figure 6B Only two dies 214 coupled to substrate 202 are shown, but it should be understood that... Figure 6B This is a simplified view of the assembly process, and therefore, in reality, hundreds, thousands, or even tens of thousands of dies 214 may be present on the substrate 202 during assembly. In some embodiments, some of the dies 214 on the substrate 202 may be light-emitting dies, such as VCSELs or LED dies, while other dies 214 on the substrate 202 may be light-receiving dies or light-sensing dies, such as photodiode dies, etc.

[0046] This method is in Figure 6C Wire bonding continues to be performed to electrically connect die 214 to substrate 202. More specifically, lead 226 is coupled between contact 222 on each die 214 and one of the first plurality of contacts 208 on substrate 202, wherein lead 226 may be as described above regarding lead 180 ( Figure 4 Any type of lead described herein. In one embodiment, the wire bonding process includes coupling a lead 226 to a surface 224 of a contact 222 and a surface 228 of a first plurality of contacts 208 using solder 230. Figure 6CAs shown, only one coupled lead 226 exists between each die 214 and the substrate 202. In other embodiments, multiple coupled leads 226 may exist between each die 214 and the substrate 202 during wire bonding. Furthermore, as referenced above... Figure 3 The substrate 202 includes traces or vias passing through it to electrically connect the first plurality of contacts 208 to corresponding contacts in the second plurality of contacts 210. Thus, each die 214 is electrically connected to one of the first plurality of contacts 208 via a lead 226 and to one of the second plurality of contacts via a trace passing through the substrate 202. During board-level assembly, the chip 214 can then be electrically connected to a PCB or other board-level substrate via the second plurality of contacts 210.

[0047] exist Figure 6D In this embodiment, transparent resin 232 is deposited on the first die 214, lead 226, solder 230, substrate 202, and first plurality of contacts 208. The transparent resin 232 may be an in-situ cured epoxy resin, although in other embodiments, the transparent resin 232 may be some other type of available transparent material. The transparent resin 232 is preferably deposited as a single, homogeneous, continuous layer that seals the first die 214, lead 226, solder 230, substrate 202, and first plurality of contacts 208. After curing the transparent resin 232, a filter 234 is formed on the transparent resin 232. Thus, the transparent resin 232 protects the die 214 while also serving as a substrate or base layer for the filter 234. As described below, the transparent resin 232 and the filter 234 allow for the elimination of the cap and cavity of a typical cavity-type optical sensor package, which reduces package size without compromising performance.

[0048] Filter 234 may be an infrared filter, which is either formed as a single, continuous, homogeneous layer on transparent resin 232, or formed as a preformed material sheet placed on and coupled to transparent resin 232. When filter 234 is an infrared filter, it may include one or more of potassium bromide, sodium chloride, magnesium fluoride, calcium fluoride, sapphire, zinc sulfide, zinc selenide, UV fused silica, borosilicate crown glass (N-BK7), silicon, and germanium. However, typically, filter 234 protects die 214 while also improving optical performance. The material used for filter 234 may be selected based on the desired properties for the application to die 214, including divergence, thermal properties (e.g., coefficient of thermal expansion), transmittance, and refractive index. Other embodiments do not include filter 234, for example in… Figure 7Alternatively, only transparent resin 232 is included, which allows for the formation of even thinner encapsulations. The thickness 236 of the transparent resin 232 can be greater than the thickness 238 of the filter 234 (although they are not required to be the same thickness). In other embodiments, thicknesses 236 and 238 are the same, while in still other embodiments, the thickness 238 of the filter 234 is greater than the thickness 236 of the resin 232.

[0049] exist Figure 6E In this embodiment, substrate 212, transparent resin 232, and filter 234 are separated into a first type of component 240. In one embodiment, separation includes cutting with a mechanical blade 242. Before cutting with the mechanical blade 242, the cutting positions on the filter 234 can be marked with a laser to improve cutting accuracy. In other embodiments, separation includes laser cutting. Each component 240 includes a die 214, a lead 226, and a portion of substrate 202 having four contacts 208, 210, and more specifically, two contacts of the first plurality of contacts 208 and two contacts of the second plurality of contacts 210 corresponding to the two first plurality of contacts 208.

[0050] although Figures 6A to 6E One or more embodiments of an assembly process for a first-type component 240 are shown. Depending on the characteristics of the die 214 in the component 240, the first-type component 240 can be a light-emitting component or a light-receiving component. However, it should be understood that... Figures 6A to 6E The processes described can be repeated or performed simultaneously to produce the second type of component 244. In other words, in one embodiment, the processes performed in... Figures 6A to 6E The process in this section is used to produce component 240, which is similar to the first component 106. Figure 2 And includes light-emitting diodes 214, such as VCSELs or LED diodes. For example... Figure 6F As shown, method 200 includes reference Figures 6A to 6E The same process is described to produce multiple second components 244, which are similar to second component 108 and include photodiode dies 246 (or some other type of photodetector die).

[0051] exist Figure 6FIn this process, method 200 continues by arranging the first component 240 and the second component 244 alternately on a carrier (e.g., on a belt 248). The belt 248 has an adhesive on its surface 250 facing the components 240, 244, such that the components 240, 244 are secured in place on the belt 248 for further processing. The components are arranged on the belt 248 in a spaced-apart relationship, with a first space 252 between the first component 240 and the second component 244, and a second space 254 between the second component 244 and the adjacent first component 240. Spaces 252, 254 can be selected according to design preferences. In other words, the distance between adjacent components 240, 244 can be selected to create resin 110 between the components 240, 244. Figure 2 (138) the thicker or thinner portion of ) and other characteristics.

[0052] exist Figure 6G In the process, resin 110 is formed on components 240, 244 and belt 248. Figure 2 A similar or identical resin 256 is used. Resin 256 is located on the surface 250 of the strip 248 facing the components 240, 244, wherein the adhesive on the surface 250 of the strip 248 is in sealing contact with the surface of the components 240, 244 containing the second contact 210 to prevent resin from contacting the second contact 210 of each component 240, 244. Furthermore, resin 256 is located on the strip 248 coplanar with the second surface 206 of the substrate 202, and therefore, resin 256 is also formed to be coplanar with the second surface 206 of the substrate 202. Resin 256 is preferably applied to the components 240, 244 as a single, homogeneous, continuous layer, wherein a portion 258 of the resin extends between and contacts the components 240, 244 to couple the components 240, 244 together. Furthermore, the resin 256 may be opaque or otherwise formed of a material configured to prevent or impede the transmission of light, such that the portion 258 between adjacent components 240, 244 is used as a shield to block light emitted from the first component 240 from being transmitted from the inside to the second component 244.

[0053] After resin 258 is deposited, holes 260 are formed extending through resin 258 and aligned with mandrels 214, 246. Holes 260 are formed by a mold having a selected pattern of protrusions corresponding to the positions of mandrels 214, 244. The mold is pressed into resin 258, the resin 258 is cured, and the mold is removed, leaving holes 260 through resin 258 at the positions corresponding to the protrusions of the mold. In one embodiment, the pull-down angle of the mold results in the resin 258 at an angle between 10 and 20 degrees to the horizontal plane around the sidewall of the hole 260. As described herein, in other embodiments, the angle to the horizontal plane is as low as 5 degrees or less. In one or more embodiments, after the mold is released, a cleaning operation is performed to remove any resin 258 on the portion of filter 234 exposed by the holes 260.

[0054] refer to Figure 6F , Figure 6H and Figure 6I The resin 256 and tape 248 are separated in the region corresponding to the second space 254 between the adjacent second component 244 and the first component 240 using a mechanical blade 262 or a laser to produce a package 264. Figure 6I As shown, after separation, the tape 248 is removed, leaving contacts 210 exposed on the outer surface 266 of each package 264. Furthermore, each package 264 includes a first component 240 and a second component 244 bonded together by resin 256. In an embodiment, the package 264 is associated with a reference... Figures 1 to 5 The package described is the same as 100.

[0055] although Figures 6A to 6I One or more embodiments of an assembly process for an optical sensor package (e.g., package 100 or 264) are described herein, but it should be understood that the assembly process described herein can be used with any number of different types of semiconductor packages and semiconductor dies. For example, in other embodiments, the above-described process is used to form packages including microelectromechanical systems (“MEMS”) type packages, etc. Furthermore, while packages 100, 264 having only two components with a specific type of die have been described, other embodiments include only one component, or three, four, five, six or more components, each having the same or different type of die, as part of the final package 100, 264. Moreover, although components are generally described herein as including one die, it will be readily understood that in some embodiments, multiple dies may be included in a single component, for example in a stacked configuration, side-by-side positioning, or any other configuration. Therefore, this disclosure is not specifically limited to the embodiments shown in the accompanying drawings, but can also be applied to other semiconductor packages and associated dies.

[0056] Figure 7 An alternative embodiment 300 of the semiconductor package 300 is shown. Unless otherwise specified below, the semiconductor package 300 is similar to packages 100, 264. Package 300 includes a semiconductor die 302 on a substrate 304, which may be a light-emitting die, a light-receiving die, a MEMS device, or some other semiconductor device. A transparent resin 306 is located on the die 302 and the substrate 304, and a molding compound or sealant 308 is located on the transparent resin 306. A hole 310 extends through the sealant 308 to expose the transparent resin 306. Figure 7 As shown, there is no filter on the transparent resin between the sealant 308 and the transparent resin 306. Thus, the package 300 can be even thinner than packages 100 and 264 because removing the filter reduces the thickness 312 of the package 300 compared to packages 100 and 264 with filters. Furthermore, compared to packages 100 and 264 which include multiple dies, the package 300 includes only a single die 302. Thus, the package 300 can be, for example, a MEMS device or a linear optical sensor.

[0057] Figure 8 An electronic device 400 is illustrated, comprising an optical sensor package (e.g., optical sensor package 100 or 300) coupled to a microprocessor 402. The microprocessor 402 can be any circuitry configured to receive or transmit electrical signals to the optical sensor package 100. The electronic device 400 may also include a power supply 404 configured to provide power to the device 400, which includes the microprocessor 402 and the optical sensor package 100. The power supply 404 may be, for example, a battery. More specifically, in some embodiments, the power supply 404 may be a rechargeable or replaceable battery. The electronic device 400 may also include a memory 406 coupled to or incorporated into the microprocessor 402.

[0058] Memory 406 may store instructions and / or data used by microprocessor 402, and may also be referred to herein as a non-transitory storage medium. Instructions executed by microprocessor 402 may execute logic to perform the functions of various embodiments of the optical sensor package described herein, including but not limited to detecting the position or distance of an object relative to package 100, 300. In other words, instructions stored in memory 406, when executed, configure microprocessor 402 to perform the functions of package 100, 300, such as processing information received from dies 146, 154 and performing actions thereon to detect the position of an object relative to package 100.

[0059] In one or more embodiments, electronic device 400 may be a cellular phone, smartphone, tablet computer, camera, and / or wearable computing device, which may be located in clothing, shoes, watches, glasses, or any other wearable structure. Electronic device 400 may also be located in a vehicle or other mobile system or machinery, such as a vehicle, boat, or robot.

[0060] Therefore, embodiments of this disclosure provide a resin-based semiconductor package that replaces the cap and cavity of known packages, offering several advantages over known products. First, eliminating the cap and cavity allows for a reduction in package size in terms of length, width, and height or thickness, increasing the number of applications in which the package described herein can be used. Second, eliminating the cap removes the glue interface between the cap and the substrate, which can lead to package failure during repeated use cycles. Because the package described herein does not include a cavity, it is more rigid and resilient to external forces than known cavity-type packages. The assembly process described herein also eliminates the inefficiencies associated with the glue process used for known cavity-type packages with caps, reducing costs.

[0061] In the foregoing description, certain specific details have been set forth in order to provide a thorough understanding of the various disclosed embodiments. However, those skilled in the art will recognize that embodiments may be practiced without one or more of these specific details, or other methods, components, materials, etc. In other instances, well-known structures associated with semiconductor devices and packages (e.g., optical sensor packages) have not been shown or described in detail to avoid unnecessarily obscuring the description of the embodiments.

[0062] Unless the context otherwise requires, in the following description and claims, the word “comprising” and its variations, such as “including” and “comprises”, shall be interpreted in an open, inclusive sense, meaning “including but not limited to”. Furthermore, the terms “first,” “second,” and similar sequence indicators shall be interpreted as interchangeable unless the context expressly provides otherwise.

[0063] Throughout this specification, references to "an embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment. Therefore, the phrases "in one embodiment" or "in an embodiment" appearing in various places throughout this specification do not necessarily refer to the same embodiment. Furthermore, a particular feature, structure, or characteristic may be combined in any suitable manner in one or more embodiments.

[0064] As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” include plural references unless otherwise expressly indicated. It should also be noted that the term “or” is generally used in its broadest sense, meaning “and / or,” unless otherwise expressly specified.

[0065] When used to describe values, amounts, quantities, or dimensions, the relative terms "approximately" and "substantially" generally refer to values, amounts, quantities, or dimensions within plus or minus 5%, unless the context clearly indicates otherwise. It should be further understood that any particular dimensions of the components or features provided herein are for illustrative purposes only with reference to the exemplary embodiments described herein, and therefore, dimensions larger or smaller than those dimensions are expressly contemplated in this disclosure unless the context clearly indicates otherwise.

[0066] The various embodiments described above can be combined to provide further embodiments. These and other changes can be made to the embodiments based on the detailed description above. Generally, the terminology used in the appended claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full scope of equivalents enjoyed by these claims. Therefore, the claims are not limited to this disclosure.

Claims

1. An apparatus comprising: The first component includes: First substrate; A first die, on the first substrate; and Transparent material is applied to the first die. The second component includes: Second substrate; The second die is on the second substrate; Contact element, on the second die; Contact pads, on the second substrate; and A lead wire is coupled between the contact element and the contact pad; A sealant on the first component and the second component, the sealant comprising portions extending between the first component and the second component along the thickness direction of the first component and the second component and coupled to the first component and the second component, the sealant being located between the first substrate and the second substrate and separating the first substrate and the second substrate; The first hole, through which the sealant passes, and aligned with the first component; and The second hole passes through the sealant and is aligned with the second component. The sealant mentioned above comprises an opaque material.

2. The apparatus according to claim 1, wherein, The first component also includes an infrared filter on the transparent material on the first die, between the sealant and the transparent material on the first die.

3. The apparatus according to claim 1, wherein, The second component also includes: The transparent material on the second die.

4. The apparatus according to claim 3, wherein, The second component also includes an infrared filter on the transparent material on the second die, between the sealant and the transparent material on the second die.

5. The apparatus according to claim 1, wherein, The first substrate of the first component includes a first surface and a second surface, the second surface being opposite to the first surface, and the sealant being coplanar with the second surface of the first substrate.

6. The apparatus according to claim 1, wherein, The first substrate of the first component includes a first surface and a second surface, the second surface being opposite to the first surface, and the transparent material on the first die being between the first surface of the first substrate and the sealant on the first component.

7. The apparatus according to claim 1, wherein, The sealant also includes a first sidewall surface that at least partially defines the boundary of the first hole, the first sidewall surface being at an angle between 0 and 90 degrees relative to the upper surface of the first component.

8. The apparatus according to claim 7, wherein, The sealant also includes a second sidewall surface that at least partially defines the boundary of the second hole, the second sidewall surface being at an angle between 0 and 90 degrees relative to the upper surface of the second component.

9. A method comprising: A first plurality of contact pads are formed on a first substrate; Forming a first component on the first substrate, wherein forming the first component includes: A first die is coupled to the first substrate, the first die including a first contact; Forming a first lead coupled between the first contact and one of the first plurality of contact pads; and A first transparent material is formed on the first die and the first substrate; A second plurality of contact pads are formed on a second substrate isolated from the first substrate; Forming a second component on the second substrate, wherein forming the second component includes: The second die is coupled to the second substrate, the second die including a second contact; Forming a second lead coupled between the second contact and one of the second plurality of contact pads; and A second transparent material is formed on the second die and the second substrate; Coupling the first component to the second component includes forming a sealant on the first component and the second component that extends between the first component and the second component, the sealant being located between the first substrate and the second substrate; A first hole is formed, through which the sealant passes and aligned with the first component; and A second hole is formed, through which the sealant passes and aligned with the second component. The sealant extends along the thickness direction of the first and second components and comprises an opaque material.

10. The method according to claim 9, wherein, The first component also includes: The first filter is coupled to the first transparent material.

11. The method according to claim 10, wherein, The formation of the second component also includes: The second filter is coupled to the second transparent material.

12. The method according to claim 9, wherein, Coupling the first component to the second component includes: forming the sealant on a first surface of the first component and forming the sealant coplanar with a second surface of the first component, the second surface of the first component being opposite to the first surface of the first component.

13. The method according to claim 12, wherein, Coupling the first component to the second component includes: forming the sealant on a first surface of the second component, and forming the sealant coplanar with a second surface of the second component, the second surface of the second component being opposite to the first surface of the second component.

14. The method according to claim 13, wherein, Forming the first hole through the sealant includes: forming a first sidewall surface defining the boundary of the first hole, the first sidewall surface being transverse to the first surface of the first component.

15. The method according to claim 13, wherein, Forming the second hole through the sealant includes forming a second sidewall surface that defines the boundary of the second hole, the second sidewall surface being transverse to the first surface of the second component.

16. An apparatus comprising: A first intermediate package has a first surface and a second surface opposite to the first surface, the first intermediate package comprising: First substrate; The first die has a first surface on the first substrate and a second surface opposite to the first surface; The first contact element is on the first die and is coplanar with the second surface of the first die; and A first transparent resin layer is on the first core. A second intermediate package has a first surface and a second surface opposite to the first surface of the second intermediate package, the second intermediate package comprising: Second substrate; The second die has a first surface on the second substrate and a second surface opposite to the first surface of the second die; The second contact is on the second die and is coplanar with the second surface of the second die; and A second transparent resin layer is applied to the second core; and A sealant at least partially encapsulates the first intermediate package and the second intermediate package, the sealant being coplanar with a second surface of the first intermediate package and the second intermediate package, the sealant being located between the first substrate and the second substrate. The first hole extends through the sealant in the first transparent resin layer, and the second hole extends through the sealant in the second transparent resin layer. The sealant extends along the thickness direction of the first intermediate package and the second intermediate package, and comprises an opaque material.

17. The apparatus of claim 16, further comprising: A first infrared filter is disposed on the first transparent resin of the first intermediate encapsulation; as well as The second infrared filter is located on the second transparent resin of the second intermediate encapsulation component. The sealant is applied to the first infrared filter and the second infrared filter. The first transparent resin of the first intermediate encapsulation is disposed between the first infrared filter and the first die, and the second transparent resin of the second intermediate encapsulation is disposed between the second infrared filter and the second die.

18. The apparatus according to claim 16, wherein, The first intermediate package includes a sidewall extending between the first surface and the second surface of the first intermediate package, and the sealant is on the first surface and the sidewall of the first intermediate package.

19. The apparatus according to claim 18, wherein, The second intermediate package includes a sidewall extending between the first surface and the second intermediate package, and the sealant is on the first surface and the sidewall of the second intermediate package.

20. The apparatus according to claim 16, wherein, The first hole is smaller than the second hole.

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