Ferroelectric thin film structures, methods and systems of forming the same, and electronic devices including the same

Abstract

Ferroelectric thin film structures, methods and systems of forming the same, and electronic devices including the same are disclosed. The ferroelectric thin film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes an oxide-based first dielectric material, and the second atomic layer includes both the first dielectric material and a dopant having a band gap greater than a band gap of the first dielectric material.

Description

Technical Field

[0001] This disclosure relates to ferroelectric thin film structures, methods and / or systems for manufacturing ferroelectric thin film structures, electronic devices including ferroelectric thin film structures, and systems and / or methods for manufacturing electronic devices. Background Technology

[0002] Silicon-based electronic devices in related technologies have limitations in improving operating characteristics and scaling down. For example, when measuring the operating voltage and current characteristics of conventional silicon-based logic transistors, the subthreshold swing (SS) is limited to about 60 mV / dec. As the size of logic transistors decreases, it becomes difficult to reduce the operating voltage to about 0.8 V or less, thus increasing power density, which limits the scaling down of logic transistors. To address this issue, electronic devices using ferroelectric thin-film structures have been developed. Summary of the Invention

[0003] Ferroelectric thin film structures, methods and / or systems for manufacturing ferroelectric thin film structures, electronic devices including ferroelectric thin film structures, and methods and / or systems for manufacturing electronic devices are provided.

[0004] Additional aspects will be set forth in part in the description which follows and will be apparent in part from the description, or may be learned by practice of the embodiments proposed in this disclosure.

[0005] According to some exemplary embodiments, a ferroelectric thin film structure may include: at least one first atomic layer comprising an oxide-based first dielectric material; and at least one second atomic layer comprising both the first dielectric material and a dopant. The dopant may have a band gap larger than that of the first dielectric material.

[0006] The first dielectric material may include an oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or a perovskite of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al).

[0007] The dopant may include an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr) and gadolinium (Gd).

[0008] The ferroelectric thin film structure may include multiple atomic layers, each comprising the same dielectric material, and the multiple atomic layers include at least one first atomic layer.

[0009] The ferroelectric thin film structure may include multiple atomic layers containing different dielectric materials, wherein the multiple atomic layers include at least one first atomic layer.

[0010] The at least one second atomic layer can constitute at least one of the uppermost part, the middle part, and the lowermost part of the ferroelectric thin film structure.

[0011] The ferroelectric thin film structure can have a thickness of about 0.1 nm to about 2 nm.

[0012] According to some example embodiments, a method for forming a ferroelectric thin film structure by atomic layer deposition (ALD) may include: depositing a first atomic layer on a substrate according to a first atomic layer deposition (ALD) operation, the first atomic layer comprising a first dielectric material based on an oxide; and depositing a second atomic layer on the first atomic layer according to a second atomic layer deposition (ALD) operation, the second atomic layer comprising both the first dielectric material and a dopant, the dopant having a band gap larger than that of the first dielectric material.

[0013] The deposition of the first atomic layer according to the first atomic layer deposition (ALD) operation may include forming a precursor of a first dielectric material on a substrate; and supplying an oxidant to the precursor of the first dielectric material to react the oxidant with the precursor of the first dielectric material to form the first atomic layer.

[0014] The deposition of the second atomic layer may include: forming an additional precursor of the first dielectric material on a portion of the first atomic layer such that a portion of the first atomic layer is exposed by the additional precursor of the first dielectric material; forming a precursor of a dopant on the portion of the first atomic layer exposed by the additional precursor of the first dielectric material; and reacting the additional precursor of the first dielectric material and the precursor of the dopant with an oxidant to form the second atomic layer.

[0015] The first dielectric material may include an oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or a perovskite of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al).

[0016] The dopant may include an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr) and gadolinium (Gd).

[0017] According to some example embodiments, an electronic device may include a substrate, a gate electrode on the substrate, and a ferroelectric layer between the substrate and the gate electrode. The ferroelectric layer may include: at least one first atomic layer comprising a first dielectric material based on an oxide; and at least one second atomic layer comprising both the first dielectric material and a dopant, the dopant having a band gap larger than that of the first dielectric material.

[0018] The first dielectric material may include an oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or a perovskite of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al).

[0019] The dopant may include an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr) and gadolinium (Gd).

[0020] The ferroelectric layer may include multiple atomic layers, the multiple atomic layers comprising the same dielectric material as each other, and the multiple atomic layers including the at least one first atomic layer.

[0021] The ferroelectric layer may include multiple atomic layers containing different dielectric materials, wherein the multiple atomic layers include the at least one first atomic layer.

[0022] The substrate may include a channel element that overlaps perpendicularly to the gate electrode and source and drain electrodes on opposite sides of the channel element.

[0023] The channel element may include at least one of Si, Ge, SiGe, III-V semiconductors, oxide semiconductors, nitride semiconductors, oxynitride semiconductors, two-dimensional (2D) materials, quantum dots, and organic semiconductors.

[0024] According to some example embodiments, an electronic device may include a first electrode and a second electrode spaced apart from each other, and a ferroelectric layer between the first electrode and the second electrode. The ferroelectric layer may include: at least one first atomic layer comprising a first dielectric material based on an oxide; and at least one second atomic layer comprising both the first dielectric material and a dopant, the dopant having a band gap larger than that of the first dielectric material.

[0025] According to some example implementations, a method of manufacturing an electronic device may include forming a ferroelectric thin film structure and manufacturing the electronic device by incorporating the ferroelectric thin film structure into electronic device components.

[0026] Electronic device components may include at least one of processing circuitry and memory.

[0027] According to some example embodiments, a system for forming a ferroelectric thin film structure may include: a process chamber including a base and / or chuck configured within the process chamber to structurally support a substrate; a plurality of component sources and a plurality of control devices, each component source being connected to the process chamber via a separate control device, each control device being configured to control the supply of a separate material held in a separate coupled component source to the process chamber; and electronic devices configured to control at least the plurality of control devices to: deposit a first atomic layer on a substrate in the process chamber according to a first atomic layer deposition (ALD) operation, the first atomic layer comprising a first dielectric material based on an oxide; and deposit a second atomic layer on the first atomic layer according to a second atomic layer deposition (ALD) operation, the second atomic layer comprising both the first dielectric material and a dopant, the dopant possibly having a band gap larger than that of the first dielectric material.

[0028] The system may also include a heat source configured as at least a portion of a heating process chamber. Electronic devices may be configured to control the heat source to perform a heat treatment process on the first and second atomic layers to crystallize the first and second atomic layers. Attached Figure Description

[0029] The above and other aspects, features and advantages of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1 A cross-section of a ferroelectric thin film structure according to some exemplary embodiments is shown;

[0031] Figure 2 A cross-section of a ferroelectric thin film structure according to a comparative example is shown;

[0032] Figure 3 It shows that by using Figure 2 The leakage current characteristics and applications of the electronic devices with the ferroelectric thin film structure shown Figure 1 The results were obtained by comparing the leakage current characteristics of the electronic device with the ferroelectric thin film structure according to the example embodiment.

[0033] Figure 4 It shows that by using Figure 2 The capacitance characteristics and applications of the electronic devices with the ferroelectric thin film structure shown Figure 1 The results were obtained by comparing the capacitance characteristics of the electronic device with the ferroelectric thin film structure shown in the example embodiment;

[0034] Figures 5A to 5G This is a view illustrating a method for manufacturing a ferroelectric thin film structure according to some exemplary embodiments;

[0035] Figure 6A cross-section of a ferroelectric thin film structure according to some exemplary embodiments is shown;

[0036] Figure 7 A cross-section of a ferroelectric thin film structure according to some exemplary embodiments is shown;

[0037] Figure 8 A cross-section of a ferroelectric thin film structure according to some exemplary embodiments is shown;

[0038] Figure 9 A cross-section of a ferroelectric thin film structure according to some exemplary embodiments is shown;

[0039] Figure 10 A cross-section of an electronic device according to some example embodiments is shown;

[0040] Figure 11 A cross-section of an electronic device according to some example embodiments is shown;

[0041] Figure 12 A cross-section of an electronic device according to some example embodiments is shown;

[0042] Figure 13 A schematic diagram of a system configured to control the formation of a ferroelectric thin film structure according to some example embodiments is shown;

[0043] Figure 14 A schematic diagram of an electronic device that may include a ferroelectric thin film structure according to some example embodiments is shown;

[0044] Figure 15 A schematic diagram of a system configured to control electronic devices according to some example embodiments is shown; and

[0045] Figure 16 This illustrates the implementation of some example methods. Figure 15 The system shown is a flowchart of a method for manufacturing electronic devices. Detailed Implementation

[0046] Reference will now be made in detail to exemplary embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this regard, some exemplary embodiments may have different forms and should not be construed as limited to the description set forth herein. Therefore, aspects are explained below by describing only some exemplary embodiments with reference to the accompanying drawings. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of" modify the entire column of elements when following a list of elements, without modifying any individual element within that column.

[0047] In the following description, some exemplary embodiments will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals refer to the same elements, and for clarity and ease of description, the dimensions of each element may be exaggerated. Furthermore, the exemplary embodiments described below are merely examples, and these examples can be modified in various other ways.

[0048] In the following text, content described as "on" or "above" may include content in a contacting or non-contacting covering relationship. Singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, when an element is referred to as "including" a component, this means that it may also include other components, and does not exclude other components, unless otherwise stated.

[0049] The term "the" and similar terms may be used in both singular and plural forms. Regarding the steps constituting the method, unless there is an explicit description of the order or otherwise, the steps may be performed in an appropriate order. It is not necessary to be limited to the order in which the steps are described. All examples or exemplary terms are used solely for the purpose of describing the technical concept in detail, and the examples or exemplary terms are not intended to limit the scope unless they are limited by the scope of the claimed protection.

[0050] Figure 1 A cross-section of a ferroelectric thin film structure according to some example embodiments is shown. Figure 1 The ferroelectric thin film structure 200 fabricated by atomic layer deposition (ALD) is shown.

[0051] Reference Figure 1 The ferroelectric thin film structure 200 includes multiple atomic layers stacked on the substrate 50. In this regard, each atomic layer is formed per cycle in an atomic layer deposition (ALD) process, and each atomic layer can have an atomically thin thickness. In some example embodiments, the ferroelectric thin film structure 200 can have a very thin thickness, for example, a thickness T of about 0.1 nm to about 2 nm. However, embodiments of this disclosure are not limited thereto.

[0052] When the terms “about” or “substantially” are used in conjunction with numerical values ​​in this specification, it is intended that the relevant numerical values ​​include a tolerance of ±10% around the stated values. When a range is specified, the range includes all values ​​within that range, such as increments of 0.1%.

[0053] Figure 1The illustrated ferroelectric thin film structure 200 includes at least one first atomic layer 210, at least one second atomic layer 220, and a third atomic layer 230. The at least one first atomic layer 210 and the at least one second atomic layer 220 may be alternately stacked on the substrate 50. In some example embodiments, at least one of the second atomic layer 220, the third atomic layer 230, and the substrate 50 may be omitted. In some example embodiments, the ferroelectric thin film structure 200 includes a single first atomic layer 210 and a single third atomic layer 230, and does not include any additional layers.

[0054] In the example implementation, such as Figure 1 As shown, three first atomic layers 210 and three second atomic layers 220 are alternately stacked on the substrate 50. However, this disclosure is not limited thereto, and the number of first atomic layers 210 and second atomic layers 220 can be modified in various ways.

[0055] The first atomic layer 210 may include an oxide-based first dielectric material 211. The first dielectric material 211 may include, for example, a high-k material. The first dielectric material 211 may include, for example, an oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or a perovskite (e.g., a perovskite structure) of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al). However, embodiments of this disclosure are not limited thereto.

[0056] For example, when the first dielectric material 211 is HfO, the first dielectric material 211 is formed by forming an Hf precursor on the surface of the substrate 50 (e.g., directly on the surface of the substrate 50) and then reacting the Hf precursor with an oxidant to form HfO on the surface of the substrate 50 (e.g., directly on the surface of the substrate 50), thereby forming a first atomic layer 210, which can be provided on the substrate 50 (e.g., directly on the substrate 50).

[0057] The second atomic layer 220 may include a second dielectric material 221, which is based on an oxide different from the oxide on which the first atomic layer 210 is based. Therefore, the first atomic layer 210 and the second atomic layer 220 may be included in a plurality of atomic layers comprising different dielectric materials. The second dielectric material 221 may include, for example, a high-k material. The second dielectric material 221 may include, for example, an oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or a perovskite (e.g., a perovskite structure) of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al). However, embodiments of this disclosure are not limited thereto.

[0058] For example, when the second dielectric material 221 is ZrO, a second atomic layer 220 is formed on the first atomic layer 210 by depositing a Zr precursor on the top surface of the first atomic layer 210 (e.g., directly on the top surface of the first atomic layer 210) and then reacting the Zr precursor with an oxidant to form ZrO on the top surface of the first atomic layer 210.

[0059] The first atomic layer 210 and the second atomic layer 220 can be arranged to be stacked alternately on the substrate 50, for example, as Figure 1 As shown. The third atomic layer 230 can be provided on the top surface of the uppermost layer in the second atomic layer 220 (e.g., directly on the top surface of the uppermost layer in the second atomic layer 220). The third atomic layer 230 may include both a first dielectric material 211 and a dopant 231 having a band gap larger than that of the first dielectric material 211. In some example embodiments, where the second atomic layer 220 is omitted from the ferroelectric thin film structure 200, the third atomic layer 230 can be provided on the top surface of the first atomic layer 210 (e.g., directly on the top surface of the first atomic layer 210).

[0060] In the third atomic layer 230, a first dielectric material 211 is provided to partially cover the top surface of the second atomic layer 220, and a dopant 231 is provided to cover the portion of the top surface of the second atomic layer 220 exposed by the first dielectric material 211. In this respect, the content ratio of the first dielectric material 211 and the dopant 231 constituting the third atomic layer 230 can be varied.

[0061] As described above, the first dielectric material 211 included in the third atomic layer 230 may include an oxide of at least one of Hf, Zr, and Al, or a perovskite of at least one of Hf, Zr, and Al. Furthermore, the dopant 231 included in the third atomic layer 230 can improve ferroelectric and electrical properties. The dopant 231 may include an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr), and gadolinium (Gd). However, embodiments of this disclosure are not limited thereto.

[0062] In some example embodiments, the first atomic layer 210 and the second atomic layer 220 may respectively comprise a first dielectric material 211 containing HfO and a second dielectric material 221 containing ZrO, and the third atomic layer 230 comprises the first dielectric material 211 containing HfO and a dopant 231 containing AlO. In this case, the third atomic layer 230 can be formed by depositing Hf precursor and Al precursor on the top surface of the second atomic layer 220 and then reacting the Hf precursor and Al precursor with an oxidant to form HfO and AlO on the top surface of the second atomic layer 220. Subsequently, the first atomic layer 210, the second atomic layer 220, and the third atomic layer 230 are crystallized by heat treatment, thereby completing the fabrication of the ferroelectric thin film structure 200. In this regard, the dopant 231 including AlO can improve the electrical properties (e.g., leakage current characteristics or capacitance characteristics) of the ferroelectric thin film structure 200 while maintaining the ferroelectric properties of the ferroelectric thin film structure 200.

[0063] Ferroelectrics possess spontaneously generated dipoles, i.e., spontaneous polarization caused by the non-centrosymmetric charge distribution within the unit cells of a crystalline material structure. Even in the absence of an external electric field, ferroelectrics exhibit remanent polarization due to these dipoles. Furthermore, the direction of polarization can be switched in units of electric domains by an external electric field. Depending on the external electric field, ferroelectrics may or may not possess hysteresis characteristics.

[0064] In a ferroelectric thin film structure 200 according to some example embodiments, a third atomic layer 230 comprising a first dielectric material 211 and a dopant 231 having a band gap larger than that of the first dielectric material 211 is provided on a first atomic layer 210 comprising the first dielectric material 211 and a second atomic layer 220 comprising a second dielectric material 221, wherein each of the first dielectric material 211 and the second dielectric material 221 is based on an oxide, and the dopant 231 included in the third atomic layer 230 can improve ferroelectric and electrical properties.

[0065] In dielectric thin films of related technologies, leakage current characteristics deteriorate as the film thickness decreases. To prevent this deterioration, methods using dielectric materials with large band gaps to form the thin film can be considered. However, since the band gap of most dielectric materials is inversely proportional to their dielectric constant, thin films formed using dielectric materials with large band gaps may not be suitable for applications such as electronic devices. Furthermore, even when ferroelectric thin films are formed through heat treatment, leakage current characteristics deteriorate at smaller film thicknesses due to grain boundaries.

[0066] In the ferroelectric thin film structure 200 according to some example embodiments, a third atomic layer 230 comprising an oxide-based first dielectric material 211 and a dopant 231 having a band gap larger than that of the first dielectric material 211 is formed by an ALD process. Thus, the ferroelectric thin film structure 200 can be formed to have a very thin thickness and can have improved electrical properties, such as leakage current characteristics and capacitance characteristics, while maintaining ferroelectric performance.

[0067] In some of the example embodiments described above, the third atomic layer 230 includes a first dielectric material 211 and a dopant 231. However, this disclosure is not limited thereto, and the third atomic layer 230 may include a second dielectric material 221 and a dopant 231 having a band gap larger than that of the second dielectric material 221. In one or more embodiments, the third atomic layer 230 may include a first dielectric material 211 and a second dielectric material 221, and a dopant 231 having a band gap larger than that of each of the first dielectric material 211 and the second dielectric material 221.

[0068] In some of the example embodiments described above, the third atomic layer 230 includes only one type of dopant 231. However, this disclosure is not limited thereto, and the third atomic layer 230 may include two or more types of dopant comprising different materials. In this case, one type of dopant may improve ferroelectric properties, while other types of dopant may improve electrical properties.

[0069] In some of the above-described exemplary embodiments, the first atomic layer 210 and the second atomic layer 220 respectively comprise different oxide-based dielectric materials, namely, the first dielectric material 211 and the second dielectric material 221. However, this disclosure is not limited thereto; the first atomic layer 210 and the second atomic layer 220 may be the same atomic layer comprising the same oxide-based dielectric material. Reiterating, the first atomic layer 210 and the second atomic layer 220 may be included in multiple atomic layers comprising the same dielectric material. In this case, the third atomic layer 230 may comprise the oxide-based dielectric material constituting the first atomic layer 210 and the second atomic layer 220, and a dopant having a band gap larger than that of the oxide-based dielectric material. For example, a ferroelectric thin film structure may comprise a first atomic layer 210 and a second atomic layer 220 each comprising HfO, and a third atomic layer 230 comprising HfO and AlO. In this regard, AlO can improve the ferroelectric and electrical properties of the ferroelectric thin film structure 200.

[0070] Figure 2 A view of the ferroelectric thin film structure according to the comparative example is shown.

[0071] Reference Figure 2The ferroelectric thin film structure 100 may include at least one first atomic layer 110 and at least one second atomic layer 120 alternately stacked on the substrate 50. Figure 2 In the comparative example shown, four first atomic layers 110 and three second atomic layers 120 are alternately stacked on the substrate 50.

[0072] The first atomic layer 110 may include a first dielectric material 111 based on an oxide, and the second atomic layer 120 may include a second dielectric material 121 based on an oxide. For example, the first atomic layer 110 may include HfO, and the second atomic layer 120 may include ZrO. However, embodiments of this disclosure are not limited thereto.

[0073] Figure 3 Showing the use Figure 2 The electronic devices (e.g., memory devices or logic devices) with the ferroelectric thin film structure shown and their use Figure 1 The leakage current characteristics of the electronic device (e.g., a memory device or a logic device) with the ferroelectric thin film structure shown according to the example embodiment.

[0074] Here, in Figure 2 In the ferroelectric thin film structure 100 shown, the first atomic layer 110 comprises HfO, and the second atomic layer 120 comprises ZrO. Figure 1 In the ferroelectric thin film structure 200 shown according to some example embodiments, the first atomic layer 210 includes HfO, the second atomic layer 220 includes ZrO, and the third atomic layer 230 includes HfO and AlO.

[0075] Figure 3 The leakage current characteristics are shown when the gate voltage is 1mV, 2mV, and 3mV. ".HZO" represents... Figure 2 The ferroelectric thin film structure 100 shown, "HAZO" represents Figure 1 The ferroelectric thin film structure 200 shown is based on some exemplary embodiments. (Refer to...) Figure 3 As you can see, Figure 1 The leakage current characteristics of the ferroelectric thin film structure 200 according to some example embodiments shown are compared to Figure 2 The leakage current characteristics of the ferroelectric thin film structure 100 shown are improved by about 100 times.

[0076] Figure 4 This shows the use of comparison Figure 2 The ferroelectric thin film structure 100 shown is used in electronic devices (e.g., capacitors) and applications Figure 1 The results shown are obtained from the capacitance characteristics of the electronic device of the ferroelectric thin film structure 200 according to some example embodiments.

[0077] Here, in Figure 2In the ferroelectric thin film structure 100 shown, the first atomic layer 110 comprises HfO, and the second atomic layer 120 comprises ZrO. Figure 1 In the ferroelectric thin film structure 200 shown according to some example embodiments, the first atomic layer 210 includes HfO, the second atomic layer 220 includes ZrO, and the third atomic layer 230 includes HfO and AlO.

[0078] Figure 4 The capacitance characteristics are shown when the voltage between the electrodes is 1mV, 2mV, and 3mV. "HZO" represents... Figure 2 The ferroelectric thin film structure 100 shown, "HAZO" represents Figure 1 The ferroelectric thin film structure 200 shown is based on some exemplary embodiments. (Refer to...) Figure 4 As can be seen, with Figure 2 Compared to the capacitance characteristics of the ferroelectric thin film structure 100 shown, Figure 1 The capacitance characteristics of the ferroelectric thin film structure 200 shown according to some example embodiments are improved by about 4%.

[0079] Figures 5A to 5G This is a view illustrating a method for fabricating a ferroelectric thin film structure according to some exemplary embodiments. Hereinafter, a method for forming a ferroelectric thin film structure in which a first atomic layer 310 comprising a first dielectric material, a second atomic layer 320 comprising a second dielectric material, and a third atomic layer 330 comprising the first dielectric material and a dopant are sequentially stacked using an atomic layer deposition process. Here, for ease of description, it is assumed that the first dielectric material is HfO, the second dielectric material is ZrO, and the dopant is AlO. It will be understood, as referenced... Figures 5B to 5G The first atomic layer 310 described herein may have a first atomic layer (including references) Figure 1 Any properties of any of the first atomic layers 210 described herein. This will be understood, as referenced... Figures 5D to 5G The second atomic layer 320 described herein may have a second atomic layer (including references) Figure 1 Any properties of any of the second atomic layers 220 described herein. This will be understood, as referenced... Figure 5G The third atomic layer 330 described herein may have a third atomic layer (including references). Figure 1 Any performance of any of the third atomic layers (230) described.

[0080] Reference Figure 5ABy supplying the Hf precursor 311' into a process chamber (not shown), a first atomic material layer 310' comprising the Hf precursor 311' (a precursor of the first dielectric material) is formed on the surface of the substrate 50 (e.g., directly formed on the surface of the substrate 50). The formation of the Hf precursor 311' may include supplying the Hf precursor 311' into the process chamber (not shown) to deposit the Hf precursor 311' onto the substrate 50. Such supply and deposition can be achieved via any known ALD operation for providing a precursor onto a substrate. Subsequently, refer to... Figure 5B By providing an oxidant (not shown) to a process chamber, the oxidant is supplied to the Hf precursor 311' to cause the Hf precursor 311' to react with the oxidant, and a first atomic layer 310 comprising HfO311 (a first dielectric material) is formed on the surface of the substrate 50 (e.g., directly on the surface of the substrate 50). Supplying the oxidant into the process chamber to induce a reaction can be achieved via any known ALD operation for supplying the oxidant to react with the precursor. Therefore, the first atomic layer 310 can be formed on the surface of the substrate 50 (e.g., directly on the surface of the substrate 50) according to a first atomic layer deposition (ALD) operation (e.g., a "process").

[0081] Reference Figure 5C By supplying a Zr precursor 321' into a process chamber, a second atomic material layer 320' comprising the Zr precursor 321' (a precursor to the second dielectric material) is formed on the top surface of the first atomic layer 310 (e.g., directly formed on the top surface of the first atomic layer 310). The formation of the Zr precursor 321' may include supplying the Zr precursor 321' into a process chamber (not shown) to deposit the Zr precursor 321' onto the first atomic layer 310. Such supply and deposition can be achieved via any known ALD operation for providing a precursor onto a layer. (See also...) Figure 5D By supplying an oxidant to a process chamber, the Zr precursor 321' reacts with the oxidant, and a second atomic layer 320 comprising ZrO 321 (a second dielectric material) is formed on the top surface of the first atomic layer 310 (e.g., directly on the top surface of the first atomic layer 310). Supplying the oxidant to the process chamber to induce the reaction can be achieved via any known ALD operation for supplying the oxidant to react with the precursor. Therefore, the second atomic layer 320 can be formed on the top surface of the first atomic layer 310 (e.g., directly on the top surface of the first atomic layer 310) according to a second atomic layer deposition (ALD) operation (e.g., a “process”).

[0082] Reference Figure 5EHf precursor 311' is supplied to a process chamber to form Hf precursor 311' on the top surface of the second atomic layer 320. Formation of the Hf precursor 311' may include supplying the Hf precursor 311' into a process chamber (not shown) to deposit the Hf precursor 311' onto at least a portion of the second atomic layer 320. Such supply and deposition can be achieved via any known ALD operation for providing a precursor onto a layer. In this regard, the Hf precursor 311' is formed to cover a portion of the top surface of the second atomic layer 320, such that a portion of the top surface of the second atomic layer 320 is exposed by the Hf precursor 311'. (Refer to...) Figure 5F An Al precursor 331' (dopant precursor) is supplied to a process chamber to form the Al precursor 331' on the top surface of the second atomic layer 320. The formation of the dopant precursor may include supplying the dopant precursor into a process chamber (not shown) to deposit the dopant precursor onto at least a portion of the second atomic layer 320, thereby covering the portion of the second atomic layer 320 not covered by the Hf precursor 311'. Such supply and deposition can be achieved via any known ALD operation for providing the precursor onto the layer. In this regard, the Al precursor 331' is formed to cover the portion of the top surface of the second atomic layer 320 exposed by the Hf precursor 311'. Therefore, a third atomic material layer 330' comprising the Hf precursor 311' and the Al precursor 331' is formed on the top surface of the second atomic layer 320.

[0083] Reference Figure 5G By supplying an oxidant to the process chamber, the Hf precursor 311' and Al precursor 331' each react with the oxidant, forming a third atomic layer 330 comprising HfO 311 and AlO 331 (dopant) on the top surface of the second atomic layer 320. Supplying the oxidant to the process chamber to induce the reaction can be achieved via any known ALD operation for supplying the oxidant to react with the precursors. Therefore, the third atomic layer 330 can be formed on the top surface of the second atomic layer 320 according to a third atomic layer deposition (ALD) operation (e.g., "process") (e.g., directly on the top surface of the second atomic layer 320). It will be understood that the third atomic layer 330 is formed indirectly on the first atomic layer 310, thus the Hf precursor 311' indirectly exposes a portion of the top surface of the first atomic layer 310 in addition to the portion exposing the top surface of the second atomic layer 320, and the dopant precursor also covers those portions of the top surface of the first atomic layer 310 exposed by the Hf precursor 311'. After that, Figure 5GThe structure shown (e.g., the first atomic layer 310, the second atomic layer 320, and / or the third atomic layer 330) undergoes a heat treatment process to crystallize the first atomic layer 310, the second atomic layer 320, and the third atomic layer 330, thereby completing the fabrication of a ferroelectric thin film structure with ferroelectric properties.

[0084] In some of the example embodiments described above, the third atomic layer 330 comprises HfO 311 and AlO 331. However, this disclosure is not limited thereto, and the third atomic layer 330 may comprise ZrO 321 and AlO 331. In this case, the third atomic layer 330 may be formed by forming a Zr precursor 321' and an Al precursor 331' and then reacting them with an oxidizing agent. In one or more embodiments, the third atomic layer 330 may comprise HfO 311, ZrO 321, and AlO 331. In this case, the third atomic layer 330 may be formed by forming an Hf precursor 311', a Zr precursor 321', and an Al precursor 331' and then reacting them with an oxidizing agent.

[0085] In the above description, the case in which a single first atomic layer, a single second atomic layer, and a single third atomic layer are formed on the substrate 50 has been described as an example. However, in one or more embodiments, at least one first atomic layer, at least one second atomic layer, and at least one third atomic layer may be formed.

[0086] In the preceding embodiments, the first atomic layer 310 and the second atomic layer 320 comprise HfO and ZrO, respectively. However, in one or more embodiments, the first atomic layer 310 and the second atomic layer 320 may comprise ZrO and HfO, respectively. In one or more embodiments, the first atomic layer 310 and the second atomic layer 320 may comprise the same material as each other. In one or more embodiments, the first atomic layer 310 and the second atomic layer 320 may each comprise HfO. In one or more embodiments, the first atomic layer 310 and the second atomic layer 320 may each comprise ZrO.

[0087] In the previous embodiments, a first atomic layer 310 and a second atomic layer 320 were formed on a substrate 50, and then a third atomic layer 330 was formed on the resulting structure. However, this disclosure is not limited thereto; the third atomic layer 330 may be formed on the substrate 50, and then the first atomic layer 310 and the second atomic layer 320 may be formed on the third atomic layer 330. In one or more embodiments, the first atomic layer 310 is formed on the substrate 50, and then the third atomic layer 330 is formed on the first atomic layer 310 (e.g., according to the reference above). Figure 5E-5GThe third ALD process described is directly formed on the first atomic layer 310, and then the second atomic layer 320 can be formed on the third atomic layer 330 or can be omitted.

[0088] In some of the example embodiments described above, the third atomic layer 330 includes only one type of dopant 331. However, this disclosure is not limited thereto, and the third atomic layer 330 may include two or more types (e.g., different types) of dopant comprising different materials. For example, when the third atomic layer 330 includes a dielectric material and different types of first and second dopants, the third atomic layer 330 may be formed by forming a precursor of the dielectric material, a precursor of the first dopant, and a precursor of the second dopant on the second atomic layer 320 and then reacting them with an oxidant.

[0089] Figure 6 A cross-section of a ferroelectric thin film structure 400 according to some example embodiments is shown. Besides... Figure 1 In contrast to the ferroelectric thin film structure 200 in which the third atomic layer 230 is located (e.g., at least partially constitutes) the uppermost portion (e.g., the portion away from the substrate 50), the third atomic layer 430 is located (e.g., located) outside the lowermost portion (e.g., the portion adjacent to the substrate 50) of the ferroelectric thin film structure 400. Figure 6 The ferroelectric thin film structure 400 shown is... Figure 1 The ferroelectric thin film structure shown is the same as 200.

[0090] Reference Figure 6 The ferroelectric thin film structure 400 includes multiple atomic layers stacked on the substrate 50. The ferroelectric thin film structure 400 may have a thickness of, for example, from about 0.1 nm to about 2 nm, but its thickness is not limited thereto.

[0091] The ferroelectric thin film structure 400 includes at least one first atomic layer 410, at least one second atomic layer 420, and a third atomic layer 430. The third atomic layer 430 may constitute the bottommost portion of the ferroelectric thin film structure 400. That is, the third atomic layer 430 is provided on the top surface of the substrate 50. The at least one first atomic layer 410 and the at least one second atomic layer 420 are alternately stacked on the third atomic layer 430.

[0092] The first atomic layer 410 may include a first dielectric material 411 based on an oxide. The second atomic layer 420 may include a second dielectric material 421, which is based on an oxide different from the oxide on which the first atomic layer 410 is based. The first dielectric material 411 and the second dielectric material 421 may include, for example, a high-k material. The first dielectric material 411 and the second dielectric material 421 may include, for example, an oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or a perovskite of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al). However, embodiments of this disclosure are not limited thereto.

[0093] The third atomic layer 430 may include a first dielectric material 411 and a dopant 431 having a band gap larger than that of the first dielectric material 411. In the third atomic layer 430, the first dielectric material 411 is provided to partially cover the top surface of the substrate 50, and the dopant 431 is provided to cover the portion of the top surface of the substrate 50 exposed by the first dielectric material 411. In this respect, the content ratio of the first dielectric material 411 and the dopant 431 constituting the third atomic layer 430 may vary. The dopant 431 included in the third atomic layer 430 may include oxides of at least one of, for example, Si, Hf, Zr, Al, La, Y, Sr, and Gd. However, embodiments of the present disclosure are not limited thereto.

[0094] In the ferroelectric thin film structure 400 according to some example embodiments, a third atomic layer 430 comprising an oxide-based first dielectric material 411 and a dopant 431 having a band gap larger than that of the first dielectric material 411 is formed by an ALD process. Thus, the ferroelectric thin film structure 400 can be formed to have a very thin thickness and can have improved electrical properties, such as leakage current characteristics and capacitance characteristics, while maintaining ferroelectric properties.

[0095] In previous embodiments, the third atomic layer 430 includes a first dielectric material 411 and a dopant 431. However, in one or more embodiments, the third atomic layer 430 may include a second dielectric material 421 and a dopant 431 having a band gap larger than that of the second dielectric material 421. In one or more embodiments, the third atomic layer 430 may include a first dielectric material 411, a second dielectric material 421, and a dopant 431 having a band gap larger than that of each of the first dielectric material 411 and the second dielectric material 421.

[0096] In previous embodiments, the third atomic layer 430 included only one type of dopant 431. However, in one or more embodiments, the third atomic layer 430 may include two or more types of dopant comprising different materials. In previous embodiments, the first atomic layer 410 and the second atomic layer 420 included different dielectric materials. However, in one or more embodiments, the first atomic layer 410 and the second atomic layer 420 may include the same dielectric material.

[0097] Figure 7 A cross-section of a ferroelectric thin film structure 500 according to some exemplary embodiments is shown. Except for the third atomic layer 530 forming the lowermost and uppermost portions of the ferroelectric thin film structure 500, Figure 7 The ferroelectric thin film structure 500 shown is... Figure 1 The ferroelectric thin film structure shown is the same as 200.

[0098] Reference Figure 7 The ferroelectric thin film structure 500 includes at least one first atomic layer 510, at least one second atomic layer 520, and a plurality of third atomic layers 530. The third atomic layers 530 may at least partially constitute both the lowermost and uppermost portions of the ferroelectric thin film structure 500. The at least one first atomic layer 510 and the at least one second atomic layer 520 are alternately stacked between the third atomic layers 530.

[0099] The first atomic layer 510 may include a first dielectric material 511 based on an oxide. The second atomic layer 520 may include a second dielectric material 521, which is based on an oxide different from the oxide on which the first atomic layer 510 is based. The first dielectric material 511 and the second dielectric material 521 may include, for example, an oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or a perovskite of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), but the embodiments are not limited thereto.

[0100] Each third atomic layer 530 may include a first dielectric material 511 and a dopant 531 having a band gap larger than that of the first dielectric material 511. In the third atomic layer 530 constituting the lowermost portion of the ferroelectric thin film structure 500, the first dielectric material 511 is provided to partially cover the top surface of the substrate 50, and the dopant 531 is provided to cover the portion of the top surface of the substrate 50 exposed by the first dielectric material 511. In the third atomic layer 530 constituting the uppermost portion of the ferroelectric thin film structure 500, the first dielectric material 511 is provided to partially cover the top surface of the second atomic layer 520, and the dopant 531 is provided to cover the portion of the top surface of the second atomic layer 520 exposed by the first dielectric material 511. The dopant 531 included in the third atomic layer 530 may include oxides of at least one of, for example, Si, Hf, Zr, Al, La, Y, Sr, and Gd. However, embodiments of the present disclosure are not limited thereto.

[0101] Figure 8 A cross-section of a ferroelectric thin film structure 600 according to some exemplary embodiments is shown. Except that a third atomic layer 630 at least partially constitutes (e.g., is located) the middle portion of the ferroelectric thin film structure 600 such that the third atomic layer 630 is situated between at least two layers (the at least two layers comprising at least one first atomic layer 610 and / or at least one second atomic layer 620), Figure 8 The ferroelectric thin film structure 600 shown is... Figure 1 The ferroelectric thin film structure shown is the same as 200.

[0102] Reference Figure 8 The ferroelectric thin film structure 600 includes at least one first atomic layer 610, at least one second atomic layer 620, and a third atomic layer 630. In this regard, the third atomic layer 630 may constitute the middle portion of the ferroelectric thin film structure 600.

[0103] The first atomic layer 610 may include a first dielectric material 611 based on an oxide. The second atomic layer 620 may include a second dielectric material 621, which is based on an oxide different from the oxide on which the first atomic layer 610 is based. The third atomic layer 630 may include the first dielectric material 611 and a dopant 631 having a band gap larger than that of the first dielectric material 611. Although in Figure 8 In the example embodiment shown, a single third atomic layer is provided in the middle portion of the ferroelectric thin film structure 600, but this disclosure is not limited thereto, and multiple third atomic layers 630 may be provided in the middle portion of the ferroelectric thin film structure 600.

[0104] Figure 9A cross-section of a ferroelectric thin film structure 700 according to some exemplary embodiments is shown. In addition to the distribution of multiple third atomic layers 730 throughout the ferroelectric thin film structure 700, Figure 9 The ferroelectric thin film structure 700 shown is... Figure 1 The ferroelectric thin film structure shown is the same as 200.

[0105] Reference Figure 9 The ferroelectric thin film structure 700 includes at least one first atomic layer 710, at least one second atomic layer 720, and a third atomic layer 730. The third atomic layer 730 is arranged regularly or irregularly throughout the ferroelectric thin film structure 700. The arrangement of the third atomic layer 730 can be modified in various ways.

[0106] The first atomic layer 710 may include a first dielectric material 711 based on an oxide. The second atomic layer 720 may include a second dielectric material 721, which is based on an oxide different from the oxide on which the first atomic layer 710 is based. The third atomic layer 730 may include the first dielectric material 711 and a dopant 731 having a band gap larger than that of the first dielectric material 711.

[0107] In the following text, electronic devices using the ferroelectric thin film structure according to the above example embodiments will be described.

[0108] Figure 10 A cross-section of an electronic device 1100 according to some example embodiments is shown. Figure 10 The electronic device 1100 shown may be, for example, a memory device or a logic device.

[0109] Reference Figure 10 Electronic device 1100 includes a substrate 1110 and a ferroelectric layer 1140 and a gate electrode 1150 sequentially stacked on the substrate 1110. It will be understood that the gate electrode 1150 is on the substrate 1110 (e.g., indirectly on the substrate 1110) and the ferroelectric layer 1140 is between the substrate 1110 and the gate electrode 1150. In the substrate 1110, there is a corresponding gate electrode 1150 (e.g., as shown in the image). Figure 10 As shown, a channel element 1115 is provided at a location that overlaps perpendicularly with the gate electrode 1150, and a source electrode S 1121 and a drain electrode D 1122 are provided on opposite sides of the channel element 1115. Figure 10 As shown, the channel element 1115 can be a protruding structure of the substrate 1110.

[0110] The source S 1121 can be electrically connected to one side of the channel element 1115, and the drain D 1122 can be electrically connected to the other side of the channel element 1115. The source S 1121 and the drain D 1122 can be formed by implanting impurities into different regions of the substrate 1110, and the region of the substrate 1110 between the source S 1121 and the drain D 1122 can be defined as the channel element 1115.

[0111] Substrate 1110 may be, for example, a Si substrate, but may alternatively be a substrate comprising materials other than Si (such as Ge, SiGe, III-V semiconductors, etc.). In this case, channel element 1115 may comprise Si, Ge, SiGe, or III-V semiconductors. To reiterate, substrate 1110 may comprise, and therefore channel element 1115 may comprise, at least one of Si, Ge, SiGe, III-V semiconductors, oxide semiconductors, nitride semiconductors, oxynitride semiconductors, two-dimensional (2D) materials, quantum dots, and organic semiconductors. However, this is merely an example, and the material of substrate 1110 may be varied and not limited to the above materials. On the other hand, as described in the following embodiments, channel element 1115 may be formed as a material layer separate from substrate 1110 rather than being part of substrate 1110.

[0112] A ferroelectric layer 1140 may be provided on the top surface of the channel element 1115 of the substrate 1110. In this regard, the ferroelectric layer 1140 is fabricated by an atomic layer deposition (ALD) process and may have a thickness of, for example, about 0.1 nm to 2 nm, but is not limited thereto.

[0113] The ferroelectric layer 1140 can be any one of the ferroelectric thin film structures 200, 400, 500, 600, and 700 according to the above embodiments. The ferroelectric layer 1140 may include at least one first atomic layer comprising an oxide-based dielectric material and at least one second atomic layer comprising the dielectric material and a dopant. The at least one second atomic layer may constitute at least one of the uppermost, middle, and lowermost portions of the ferroelectric layer 1140.

[0114] At least one first atomic layer may comprise multiple atomic layers containing different dielectric materials. At least one first atomic layer may comprise multiple atomic layers containing the same dielectric material as each other. The dielectric material included in the first atomic layer may include, for example, a high-k material. For example, the first atomic layer may be, but is not limited to, an oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or a perovskite of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al).

[0115] The second atomic layer may comprise a dielectric material as described above and a dopant having a band gap larger than that dielectric material. In this regard, the dopant may comprise an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr), and gadolinium (Gd), but the embodiments are not limited thereto.

[0116] A gate electrode 1150 is provided on the top surface of the ferroelectric layer 1140. In this regard, the gate electrode 1150 may be arranged facing the channel element 1115 of the substrate 1110 with the ferroelectric layer 1140 between them. The gate electrode 1150 may include a conductive material.

[0117] In the electronic device 1100 according to some example embodiments, the ferroelectric layer 1140 can have a small thickness due to the inclusion of a dielectric material and a dopant having a band gap larger than that of the dielectric material, and the leakage current characteristics can be improved while the ferroelectric properties are maintained.

[0118] Figure 11 A cross-section of an electronic device 1200 according to some example embodiments is shown. Figure 11 The electronic device 1200 shown may be, for example, a memory device or a logic device.

[0119] Reference Figure 11 The electronic device 1200 includes a substrate 1210, a channel element 1215, a ferroelectric layer 1240, and a gate electrode 1250, which are stacked sequentially on the substrate 1210 in the order described herein. A source electrode 1221 and a drain electrode 1222 may be provided on both sides of the channel element 1215.

[0120] Substrate 1210 may include, but is not limited to, Si, Ge, SiGe, III-V semiconductors, etc. Channel element 1215 may be provided on the top surface of substrate 1210. Channel element 1215 may be provided as a material layer separate from substrate 1210, i.e., not part of substrate 1210. Channel element 1215 may include at least one of, for example, oxide semiconductors, nitride semiconductors, oxide-oxygen nitride semiconductors, two-dimensional materials (2D materials), quantum dots, and organic semiconductors. In this regard, oxide semiconductors may include, for example, InGaZnO, two-dimensional materials may include, for example, transition metal dichalcogenides (TMDs) or graphene, and quantum dots may include, for example, colloidal quantum dots or nanoparticles. However, this is merely an example and is not limiting.

[0121] Source electrode 1221 and drain electrode 1222 may be provided on both sides of channel element 1215. Source electrode 1221 may be provided to be connected to one side of channel element 1215, and drain electrode 1222 may be provided to be connected to the other side of channel element 1215. Source electrode 1221 and drain electrode 1222 may include conductive materials, such as metal, metal compound, or conductive polymer.

[0122] A ferroelectric layer 1240 may be provided on the top surface of the channel element 1215, and a gate electrode 1250 may be provided on the top surface of the ferroelectric layer 1240. In this regard, since the ferroelectric layer 1240 and the gate electrode 1250 are the same as those in the above embodiments, their detailed description will be omitted.

[0123] Figure 12 A cross-section of an electronic device 1300 according to some example embodiments is shown. Figure 12 The electronic device 1300 shown can be, for example, a capacitor.

[0124] Reference Figure 12 The electronic device 1300 may include a first electrode 1310 and a second electrode 1320 spaced apart from each other (e.g., not in direct contact with each other) and a ferroelectric layer 1340 provided between the first electrode 1310 and the second electrode 1320. In this regard, the first electrode 1310 and the second electrode 1320 may each include, for example, a conductive metal.

[0125] The ferroelectric layer 1340 is fabricated using an ALD process and can be one of the ferroelectric thin film structures 200, 400, 500, 600, and 700 according to the embodiments described above. The ferroelectric layer 1340 may include at least one first atomic layer comprising an oxide-based dielectric material and at least one second atomic layer comprising the dielectric material and a dopant. The at least one second atomic layer may constitute at least one of the uppermost, middle, and lowermost portions of the ferroelectric layer 1340.

[0126] At least one first atomic layer may comprise multiple atomic layers containing different dielectric materials. At least one first atomic layer may comprise multiple atomic layers containing the same dielectric material as each other. The dielectric material included in the first atomic layer may include, for example, a high-k material. For example, the first atomic layer may be, but is not limited to, an oxide or perovskite of at least one of Hf, Zr, and Al.

[0127] The second atomic layer may comprise a dielectric material as described above and a dopant having a band gap larger than that dielectric material. In this regard, the dopant may comprise an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr), and gadolinium (Gd), but the embodiments are not limited thereto.

[0128] In an electronic device 1300 according to some example embodiments, the ferroelectric layer 1340 can improve capacitance characteristics while maintaining ferroelectric properties, since it includes a dielectric material and a dopant having a band gap larger than that of the dielectric material.

[0129] Figure 13 A schematic diagram of a system 1301 configured to control the formation of a ferroelectric thin film structure according to some example embodiments is shown. As used herein, system 1301 may be referred to as a "set".

[0130] Reference Figure 13 The system 1301 includes a computing device 3010 (which may also be referred to as an electronic device here interchangeably), a manipulator device 3040, a heat source 3060, a component (e.g., gas, fluid, etc.) source 3030-1 to 3030-N (where N is a positive integer) and a process chamber 3020.

[0131] Referring first to computing device 3010, computing device 3010 may include processing circuitry 3012 (also referred to herein as processor), memory 3014, power supply 3015, and communication interface 3016, which are communicatively connected and / or electrically connected together via bus 3011.

[0132] The computing device 3010 may be included in one or more of a wide variety of electronic devices, including, for example, mobile phones, digital cameras, sensor devices, etc. In some example embodiments, the computing device 3010 may include one or more of a server, mobile device, personal computer (PC), tablet computer, laptop computer, netbook, or some combination thereof. The mobile device may include a mobile phone, smartphone, personal digital assistant (PDA), or some combination thereof.

[0133] The memory 3014, processing circuit 3012, power supply 3015 and communication interface 3016 can communicate with each other via bus 3011.

[0134] The communication interface 3016 can communicate data to and / or receive data from external devices using a wide variety of communication protocols. In some example implementations, the communication interface can be connected to an electronic wire (e.g., a conductor) and can be configured to receive and process electrical signals from one or more external devices.

[0135] Processing circuit 3012 can run programs and via, for example Figure 13 The communication interface 3016 shown controls one or more aspects of the control system 1301. The program code to be executed by the processing circuit 3012 can be stored in the memory 3014.

[0136] Memory 3014 can store information. Memory 3014 can be volatile or non-volatile memory. Memory 3014 can be a non-transitory computer-readable storage medium. Memory 3014 can store computer-readable instructions that, when executed, cause the execution of one or more methods, functions, processes, etc., as described herein. In some example embodiments, processing circuitry 3012 can execute one or more of the computer-readable instructions stored in memory 3014 to cause system 1301 to perform some of all the methods described herein, including... Figure 5A-5G The method shown.

[0137] In some example implementations, communication interface 3016 may include a USB and / or HDMI interface. In some example implementations, communication interface 2050 may include a wireless communication interface.

[0138] Still refer to Figure 13 Process chamber 3020 can be any of the process chambers described herein and may include a base and / or chuck 3022 configured to structurally support substrate 3050, on which a ferroelectric thin film structure 4000 (which can be any of the ferroelectric thin film structures described herein) according to any of the exemplary embodiments may be formed. As shown, base and / or chuck 3022 may be coupled to a motor such that electronics 3010 may be configured to move base and / or chuck 3022 via control signals communicated from communication interface 3016, for example, thereby enabling substrate 3050 and / or ferroelectric thin film structure 4000 to move into, into, and / or out of process chamber 3020.

[0139] Still refer to Figure 13System 1301 includes a manipulator device 3040, which can be any known means for manipulating a thin film structure and / or a substrate into and / or out of the process chamber 3020. The process chamber 3020 may include a portal (e.g., a door) 3021 through which the manipulator device 3040 can enter the interior of the process chamber 3020 to provide a substrate 3050 and / or at least retrieve a ferroelectric thin film structure 4000 formed in the process chamber 3020. As shown, the manipulator device 3040 and the portal 3021 can be controlled by an electronic device 3010.

[0140] Still refer to Figure 13 System 1301 includes one or more component sources 3030-1 to 3030-N (N being a positive integer), which can store a wide variety of materials, including first dielectric materials, second dielectric materials, first dielectric material precursors, second dielectric material precursors, dopant precursors, oxidants, any other materials and / or components described herein, or any combination thereof. Materials can be stored as gases, as liquids, as any type of fluid, or any combination thereof. As shown, each individual component source is coupled to process chamber 3020 via a separate supply control device (also referred to as a control device, such as a control valve) 3032-1 to 3032-N, wherein each control device 3032-1 to 3032-N (e.g., based on a control valve) is configured to control the supply of individual material held in the individual (e.g., corresponding) component source within the coupled component sources 3030-1 to 3030-N to the process chamber. The component sources 3030-1 to 3030-N and / or control devices 3032-1 to 3032-N can be controlled by electronic device 3010. The component sources 3030-1 to 3030-N and control devices 3032-1 to 3032-N can be any known type of component source or supply system for supplying materials to the process chamber in the ALD process.

[0141] Still refer to Figure 13 System 1301 includes a heat source 3060, which can be any known heating device, heating element, heater, etc., that can generate heat and provide the generated heat to process chamber 3020 (e.g., to heat at least a portion of process chamber 3020), such as providing heat treatment associated with the ALD process as described herein. As shown, heat source 3060 can be controlled by electronic device 3010.

[0142] like Figure 13As shown, electronic device 3010 can, for example, communicate with various components of system 1301 via communication line 3018 by running an instruction program stored in memory 3014 based on processing circuitry 3012, so that system 1301 forms ferroelectric thin film structure 4000 according to any example embodiment herein. It will be understood that system 1301 may be omitted. Figure 13 One or more of the components shown (e.g., heat source 3060, base and / or chuck 3022, etc.).

[0143] Figure 14 A schematic diagram of an electronic device that may include a ferroelectric thin film structure, according to some example embodiments, is shown.

[0144] As shown in the figure, electronic device 1400 includes one or more electronic device components, including a processor (e.g., processing circuitry) 1420 and a memory 1430 that are communicatively connected together via a bus 1410.

[0145] Processing circuitry 1420 may be included in one or more instances of processing circuitry (such as hardware including logic circuitry, a hardware / software combination of a processor running software, or a combination thereof), may include one or more instances of the processing circuitry, and / or may be implemented by one or more instances of the processing circuitry. For example, processing circuitry 1420 may include, but is not limited to, a central processing unit (CPU), application processor (AP), arithmetic logic unit (ALU), graphics processing unit (GPU), digital signal processor, microcomputer, field-programmable gate array (FPGA), system-on-a-chip (SoC), programmable logic unit, microprocessor, or application-specific integrated circuit (ASIC), etc. In some example embodiments, memory 1430 may include a non-transitory computer-readable storage device such as a solid-state drive (SSD) storing instruction programs, and processing circuitry 1420 may be configured to execute the instruction programs to implement the functions of electronic device 1400.

[0146] In some example embodiments, electronic device 1400 may include a ferroelectric thin film structure of any example embodiment of the invention in one or more of the processing circuitry 1420 and memory 1430, and may thus exhibit improved operating performance, for example, based on one or more portions of electronic device 1400 having improved electrical characteristics (such as leakage current characteristics or capacitance characteristics) (e.g., processing circuitry 1420 and / or memory 1430). In some example embodiments, electronic device 1400 may include in one or more of the processing circuitry 1420 and memory 1430 Figure 10-12 One or more of the electronic devices shown. In such an example embodiment, electronic devices 1100-1300 may be referred to as electronic device components.

[0147] Figure 15 A schematic diagram of a system 1500 configured to control electronic devices according to some example embodiments is shown. Figure 16 This is a flowchart illustrating a method of manufacturing an electronic device by system 1500 according to some exemplary embodiments. As shown, system 1500 may include system 1301, which is configured to form a ferroelectric thin film structure (S1602) of any of the exemplary embodiments of the present invention. System 1500 also includes fabrication assembly 1504, which is configured to combine the ferroelectric thin film structures(s) formed by system 1301 with a variety of electronic device sub-components 1502 (wherein the sub-components 1502 may be formed according to any known process for forming electronic device sub-components (including printed circuit boards, power supplies, buses, communication interface components, processing circuit components, memory components, any combination thereof, etc.)). The fabrication component 1504 may combine the ferroelectric thin film structures(s) with the sub-components 1502 (S1604) according to any known process for fabricating (“manufacturing”) electronic device components (e.g., processing circuitry 1420, memory 1430, any one or any combination thereof of electronic devices 1100-1300) and / or the electronic device itself to fabricate (“manufacture”) an electronic device(s) 1400 comprising one or more ferroelectric thin film structures according to any exemplary embodiment of the concept of the present invention. Such combination (S1604) and fabrication (S1606) may include, for example, assembling electronic device components (e.g., any of the electronic devices 1100-1300 described herein, further assembling processing circuitry 1420 and / or memory 1430 based on combining the electronic devices with additional electronic device sub-components, etc.) and forming electronic devices (e.g., 1400) by connecting the electronic device components to other electronic device components (e.g., printed circuit boards (PCBs)) via any known method.

[0148] According to the above exemplary embodiments, ferroelectric thin film structures or ferroelectric layers fabricated by ALD processes (e.g., fabricated according to any of the exemplary embodiments of the methods described herein) can have improved ferroelectric properties while maintaining their small thickness, and can also have improved electrical properties, such as leakage current characteristics or capacitance characteristics, due to the inclusion of atomic layers comprising an oxide-based dielectric material and a dopant having a band gap larger than that of the dielectric material. Although embodiments have been described above, these embodiments are merely examples and can be modified in various other ways by those skilled in the art.

[0149] It should be understood that the exemplary embodiments described herein are to be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each exemplary embodiment should generally be considered applicable to other similar features or aspects in one or more exemplary embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that a wide variety of changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims.

[0150] This application claims the benefit of Korean Patent Application No. 10-2019-0119088, filed on September 26, 2019, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A ferroelectric thin film structure, comprising: At least one first atomic layer comprising an oxide-based first dielectric material; At least one second atomic layer, comprising a second dielectric material, the second dielectric material being based on another oxide and different from the first dielectric material; as well as At least one third atomic layer comprising both the first dielectric material and a dopant, wherein the dopant has a band gap larger than that of the first dielectric material. The at least one second atomic layer is located between the at least one first atomic layer and the at least one third atomic layer. The at least third atomic layer has a material composition that is different from both the at least first atomic layer and the at least second atomic layer.

2. The ferroelectric thin film structure according to claim 1, wherein the first dielectric material comprises: An oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or A perovskite of at least one of hafnium (Hf), zirconium (Zr) and aluminum (Al).

3. The ferroelectric thin film structure according to claim 1, wherein the dopant comprises an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr) and gadolinium (Gd).

4. The ferroelectric thin film structure according to claim 1, wherein the at least one second atomic layer constitutes at least one of the following: The uppermost part of the ferroelectric thin film structure The middle part of the ferroelectric thin film structure, and The lowermost part of the ferroelectric thin film structure.

5. The ferroelectric thin film structure according to claim 1, wherein the ferroelectric thin film structure has a thickness of 0.1 nm to 2 nm.

6. A method for forming a ferroelectric thin film structure by atomic layer deposition, the method comprising: A first atomic layer is deposited on a substrate according to a first atomic layer deposition operation, the first atomic layer comprising a first dielectric material based on an oxide; A second atomic layer is deposited on the first atomic layer according to a second atomic layer deposition operation. The second atomic layer includes a second dielectric material, which is based on another oxide and is different from the first dielectric material. as well as A third atomic layer is deposited on the second atomic layer according to the second atomic layer deposition operation. The third atomic layer comprises both the first dielectric material and a dopant, wherein the dopant has a band gap larger than that of the first dielectric material. The third atomic layer has a material composition that is different from both the first atomic layer and the second atomic layer.

7. The method of claim 6, wherein the deposition of the first atomic layer according to the first atomic layer deposition operation comprises: A precursor of the first dielectric material is formed on the substrate; as well as An oxidant is supplied to the precursor of the first dielectric material to react with the precursor of the first dielectric material to form the first atomic layer.

8. The method of claim 6, wherein the deposition of the second atomic layer comprises: An additional precursor of the first dielectric material is formed on a portion of the first atomic layer, such that a portion of the first atomic layer is exposed by the additional precursor of the first dielectric material. The precursor of the dopant is formed on the additional portion of the first atomic layer exposed by the additional precursor of the first dielectric material; as well as The precursor of the first dielectric material and the precursor of the dopant are reacted with an oxidant to form the second atomic layer.

9. The method of claim 6, wherein the first dielectric material comprises: An oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or A perovskite of at least one of hafnium (Hf), zirconium (Zr) and aluminum (Al).

10. The method of claim 6, wherein the dopant comprises an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr), and gadolinium (Gd).

11. An electronic device, comprising: Substrate; Gate electrode on the substrate; as well as A ferroelectric thin film structure between the substrate and the gate electrode, the ferroelectric thin film structure comprising: At least one first atomic layer comprising an oxide-based first dielectric material; At least one second atomic layer, comprising a second dielectric material, the second dielectric material being based on another oxide and different from the first dielectric material; and At least one third atomic layer comprising both the first dielectric material and a dopant, wherein the dopant has a band gap larger than that of the first dielectric material. The at least one second atomic layer is located between the at least one first atomic layer and the at least one third atomic layer. The at least third atomic layer has a material composition that is different from both the at least first atomic layer and the at least second atomic layer.

12. The electronic device of claim 11, wherein the first dielectric material comprises: An oxide of at least one of hafnium (Hf), zirconium (Zr), and aluminum (Al), or A perovskite of at least one of hafnium (Hf), zirconium (Zr) and aluminum (Al).

13. The electronic device of claim 11, wherein the dopant comprises an oxide of at least one of silicon (Si), hafnium (Hf), zirconium (Zr), aluminum (Al), lanthanum (La), yttrium (Y), strontium (Sr), and gadolinium (Gd).

14. The electronic device of claim 11, wherein the substrate comprises: A channel element that overlaps perpendicularly to the gate electrode, and The source and drain on opposite sides of the channel element.

15. The electronic device of claim 14, wherein the channel element comprises at least one of Si, Ge, SiGe, III-V semiconductors, oxide semiconductors, nitride semiconductors, oxynitride semiconductors, two-dimensional materials, quantum dots, and organic semiconductors.

16. An electronic device, comprising: The first and second electrodes are spaced apart from each other; as well as A ferroelectric thin film structure between the first electrode and the second electrode, wherein the ferroelectric thin film structure comprises: At least one first atomic layer comprising an oxide-based first dielectric material; At least one second atomic layer, comprising a second dielectric material, the second dielectric material being based on another oxide and different from the first dielectric material; and At least one third atomic layer comprising both the first dielectric material and a dopant, wherein the dopant has a band gap larger than that of the first dielectric material. The at least one second atomic layer is located between the at least one first atomic layer and the at least one third atomic layer. The at least third atomic layer has a material composition that is different from both the at least first atomic layer and the at least second atomic layer.

17. A method of manufacturing an electronic device, the method comprising: The method according to claim 6 forms a ferroelectric thin film structure; as well as The electronic device is fabricated by incorporating the ferroelectric thin film structure into electronic device components.

18. The method of claim 17, wherein the electronic device component comprises at least one of a processing circuit and a memory.

19. A system for forming ferroelectric thin film structures, the system comprising: A process chamber, including a base and / or chuck configured within the process chamber to structurally support a substrate; Multiple component sources and multiple control devices, each component source being coupled to the process chamber via a separate control device, each control device being configured to control the supply of a separate material held in a separate coupled component source to the process chamber; and An electronic device configured to control at least the plurality of control devices to: A first atomic layer is deposited on the substrate in the process chamber according to a first atomic layer deposition operation, the first atomic layer comprising a first dielectric material based on an oxide. A second atomic layer is deposited on the first atomic layer according to a second atomic layer deposition operation. The second atomic layer includes a second dielectric material, which is based on another oxide and is different from the first dielectric material. as well as A third atomic layer is deposited on the second atomic layer according to a third atomic layer deposition operation. The third atomic layer comprises both the first dielectric material and a dopant, wherein the dopant has a band gap larger than that of the first dielectric material. The third atomic layer has a material composition that is different from both the first atomic layer and the second atomic layer.

20. The system of claim 19, further comprising: A heat source configured to heat at least a portion of the process chamber. The electronic device is configured to control the heat source to perform a heat treatment process on the first atomic layer and the second atomic layer to crystallize the first atomic layer and the second atomic layer.

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