Method for manufacturing light emitting display device and light emitting display device

Abstract

The present disclosure relates to a method for manufacturing a light-emitting display device and a light-emitting display device. The method includes: forming a first photosensitive layer on a conductive material layer; etching the conductive material layer by using the first photosensitive layer as a mask to form a pixel electrode; ashing the first photosensitive layer disposed on the pixel electrode; forming a pixel defining layer, the pixel defining layer covering an edge portion of the pixel electrode and including a first opening overlapping the ashed first photosensitive layer; removing the ashed first photosensitive layer disposed in the first opening; forming an intermediate layer including a functional layer and an emission layer on the pixel defining layer; and forming a relative electrode on the intermediate layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0126292 filed on October 11, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a display device, and more particularly, to a method of manufacturing a light emitting display device and a light emitting display device. Background Art

[0004] Unlike a liquid crystal display device, an organic light emitting diode display device, which is a display device for displaying an image, has a self-emission characteristic. Therefore, since the organic light emitting diode display device does not require a separate light source, the thickness and weight of the organic light emitting diode display device can be reduced. In addition, the organic light emitting diode display device can have high-quality characteristics such as low power consumption, high brightness, and fast response time. Summary of the invention

[0005] The organic light emitting diode display device described above should have excellent contrast and brightness, but the contrast may be poor in bright external light. In order to prevent this limitation, a pixel defining layer having a specific color (e.g., black, etc.) may be formed. Due to the residues appearing in the process of forming the colored pixel defining layer, dark spots may be generated. One or more embodiments may provide a light emitting display device and a manufacturing method thereof, thereby preventing the degradation of the characteristics for external light and the defects caused by the generation of dark spots, and simplifying the manufacturing process. However, these limitations are only examples, and the scope of the present disclosure is not limited thereto.

[0006] Additional aspects will be set forth in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the invention.

[0007] According to an embodiment, a method for manufacturing a light-emitting display device includes: forming a first photosensitive layer on a conductive material layer; etching the conductive material layer by using the first photosensitive layer as a mask to form a pixel electrode; ashing the first photosensitive layer disposed on the pixel electrode; forming a pixel defining layer, the pixel defining layer covering an edge portion of the pixel electrode and including a first opening overlapping with the ashed first photosensitive layer; removing the ashed first photosensitive layer disposed in the first opening; forming an intermediate layer including a functional layer and an emission layer on the pixel defining layer; and forming a relative electrode on the intermediate layer.

[0008] In an embodiment, forming the pixel defining layer may include: forming a colored material layer on the ashed first photosensitive layer; exposing a portion of the colored material layer; and forming the first opening by developing the exposed portion of the colored material layer.

[0009] The pixel defining layer may include a negative photosensitive material.

[0010] The method may further include: curing the pixel defining layer after forming the first opening.

[0011] The pixel defining layer may further include a color pigment or carbon black.

[0012] In an embodiment, in a plan view, a shape of the first opening may be substantially the same as a shape of the pixel electrode.

[0013] In an embodiment, the method may further include: forming a thin film transistor; and forming an insulating layer between the thin film transistor and the pixel electrode. The forming of the insulating layer may include: forming a contact hole for electrical connection between the thin film transistor and the pixel electrode, and the first opening may overlap the contact hole.

[0014] The method may further include forming an optical function layer including a color filter overlapping the first opening and a black matrix adjacent to the color filter, wherein the black matrix may overlap the contact hole.

[0015] In an embodiment, the method may further include: forming a second photosensitive layer on the conductive material layer; and etching the conductive material layer by using the second photosensitive layer as a mask to form a wiring.

[0016] The method may further include ashing the second photosensitive layer disposed on the wiring, wherein forming the pixel defining layer may include forming a second opening overlapping the ashed second photosensitive layer and spaced apart from the first opening.

[0017] The method may further include removing the ashed second photosensitive layer disposed in the second opening.

[0018] The method may further include forming an insulating layer overlapping the second opening and disposed between the wiring and the intermediate layer.

[0019] The method may further include forming a hole in a portion of the functional layer that may overlap the wiring, wherein the opposite electrode may electrically contact the wiring through the hole.

[0020] According to an embodiment, a light-emitting display device may include: a substrate; a thin film transistor located on the substrate; a pixel electrode electrically connected to the thin film transistor; a first insulating layer arranged between the thin film transistor and the pixel electrode; a pixel defining layer covering an edge portion of the pixel electrode and including a first opening overlapping the pixel electrode; an intermediate layer including an emission layer and a functional layer overlapping the first opening; and a relative electrode located on the intermediate layer.

[0021] In an embodiment, the first insulating layer may include a contact hole for electrical connection between the thin film transistor and the pixel electrode, and the first opening may overlap the contact hole.

[0022] The light emitting display device may further include: an optical function layer including a color filter overlapping the first opening; and a black matrix adjacent to the color filter and overlapping a portion of the first opening.

[0023] The black matrix may overlap the contact hole.

[0024] In an embodiment, the pixel defining layer may further include a color pigment or carbon black.

[0025] In an embodiment, when viewed in a direction perpendicular to the substrate, a shape of the first opening may be substantially the same as a shape of the pixel electrode.

[0026] In an embodiment, a first distance from a first edge of the pixel electrode to a first edge of the first opening may be substantially the same as a second distance from a second edge of the pixel electrode to a second edge of the first opening.

[0027] In an embodiment, the light emitting display device may further include a wiring spaced apart from the pixel electrode, wherein the wiring and the pixel electrode may include the same material.

[0028] The pixel defining layer may further include a second opening covering an edge portion of the wiring and overlapping the wiring.

[0029] The second opening may have substantially the same shape as that of the wiring when viewed in a direction perpendicular to the substrate.

[0030] The light emitting display device may further include: a second insulating layer overlapping the second opening.

[0031] The second insulating layer may be provided between the wiring and the intermediate layer.

[0032] The light emitting display device may further include: a spacer disposed on the pixel defining layer, wherein the second insulating layer and the spacer may include the same material.

[0033] The pixel defining layer and the spacer may include different materials.

[0034] In an embodiment, the light-emitting display device may further include: a driving thin film transistor electrically connected to the thin film transistor; an initialization thin film transistor electrically connected to the gate electrode of the driving thin film transistor or the pixel electrode; and an initialization voltage line electrically connected to the initialization thin film transistor, wherein the wiring may include the initialization voltage line.

[0035] In an embodiment, the functional layer may include a hole overlapping the second opening.

[0036] The counter electrode may be in electrical contact with the wiring through the hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The above and other aspects, features and advantages of the embodiments of the present disclosure will be more apparent from the following description in conjunction with the accompanying drawings, in which:

[0038] Figures 1 to 6 is a schematic cross-sectional view showing a process of manufacturing a light-emitting display device according to an embodiment;

[0039] 7A to 7C is a schematic cross-sectional view showing a part of a process of manufacturing a light-emitting display device according to an embodiment;

[0040] Figure 8 is a plan view showing a process of manufacturing a light-emitting display device according to an embodiment, which shows pixel electrodes and wirings;

[0041] Fig. 9 is a plan view showing a process of manufacturing a light-emitting display device according to an embodiment, which shows a pixel defining layer formed on a pixel electrode and a wiring;

[0042] FIG. 10A to FIG. 10C is a schematic cross-sectional view showing a process of manufacturing a light-emitting display device according to an embodiment;

[0043] Fig.11 is a plan view showing a process of manufacturing a light emitting display device according to an embodiment;

[0044] Fig.12 is a schematic diagram showing an equivalent circuit of a pixel circuit connected to a light emitting diode (eg, an organic light emitting diode) of a light emitting display device according to an embodiment;

[0045] FIG. 13A to FIG. 13Eis a schematic cross-sectional view showing a process of manufacturing a light-emitting display device according to an embodiment; and

[0046] Fig.14 is a plan view illustrating a process of manufacturing a light emitting display device according to an embodiment. DETAILED DESCRIPTION

[0047] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to explain various aspects of this specification.

[0048] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. For the purpose of its meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" may be understood to mean "A, B, or A and B". The terms "and" and "or" may be used in conjunction or in separate meanings, and may be understood to be equivalent to "and / or".

[0049] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. In the following description, the same reference numerals are given to the same components, and redundant descriptions thereof will be omitted.

[0050] It will be understood that, although the terms “first”, “second”, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another.

[0051] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0052] It will also be understood that the terms “comprising,” “including,” “containing,” and / or “having” used herein indicate the presence of stated features or elements, but do not preclude the presence or addition of one or more other features or elements.

[0053] It will be understood that when a layer, region or element is referred to as being “formed on” another layer, region or element, the layer, region or element may be directly or indirectly formed on the other layer, region or element. For example, intervening layers, regions or elements may be present.

[0054] For the convenience of explanation, the size of the elements in the drawings may be exaggerated. For example, since the size and thickness of the elements in the drawings are arbitrarily shown for the convenience of explanation, the following embodiments are not limited thereto.

[0055] When a specific embodiment can be implemented differently, a specific process order can be performed differently from the described order. For example, two consecutively described processes can be performed substantially simultaneously or in a reverse order to the described order.

[0056] In the following description, it will be understood that when a film, layer, region, element or component is referred to as being "connected to" or "coupled to" another film, layer, region, element or component, the film, layer, region, element or component may be directly or indirectly connected or coupled to the other film, layer, region, element or component. For example, there may be an intermediate film, layer, region, element or component. In the following embodiments, it will be understood that when a film, layer, region, element or component is referred to as being "electrically connected to" or "electrically coupled to" another film, layer, region, element or component, the film, layer, region, element or component may be directly or indirectly electrically connected or electrically coupled to another film, layer, region, element or component. For example, there may be an intermediate film, layer, region, element or component.

[0057] Figures 1 to 6 is a schematic cross-sectional view illustrating a process of manufacturing a light emitting display device according to an embodiment.

[0058] Reference Figure 1 , a conductive material layer 200 is formed on the substrate 100, and a first photosensitive layer 1100 and a second photosensitive layer 1200 are formed on the conductive material layer 200. In one embodiment, Figure 1 It is shown that the conductive material layer 200 is formed on the planarization insulating layer 170. Before forming the conductive material layer 200, a thin film transistor TFT and a storage capacitor Cap may be formed on the substrate 100.

[0059] The substrate 100 may include various materials such as a glass material, a metal material, or a plastic material (e.g., polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide, etc.). A buffer layer 110, a gate insulating layer 130, an interlayer insulating layer 150, and a planarizing insulating layer 170 may be formed on the substrate 100. The buffer layer 110 prevents impurities from penetrating into the semiconductor layer of the thin film transistor TFT. The gate insulating layer 130 insulates the semiconductor layer and the gate electrode of the thin film transistor TFT from each other. The interlayer insulating layer 150 insulates the source electrode, the drain electrode, and the gate electrode of the thin film transistor TFT from each other. The planarizing insulating layer 170 covers the thin film transistor TFT and has an approximately flat upper surface.

[0060] The conductive material layer 200 may include a reflective film containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) and / or any compound thereof. The conductive material layer 200 may include a reflective film containing the above materials and a transparent conductive film disposed above and / or below the reflective film. The transparent conductive film may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) or aluminum zinc oxide (AZO), etc. In one embodiment, the conductive material layer 200 may have a multi-layer structure in which an ITO film, an Ag film and an ITO film are sequentially stacked.

[0061] The first photosensitive layer 1100 and the second photosensitive layer 1200 are spaced apart from each other. The first photosensitive layer 1100 may overlap with a contact hole CNT configured to electrically connect the conductive material layer 200 to the thin film transistor TFT.

[0062] The first photosensitive layer 1100 and the second photosensitive layer 1200 may include a positive photosensitive material. The first photosensitive layer 1100 and the second photosensitive layer 1200 may be formed by coating a photosensitive material layer on the conductive material layer 200 and performing an exposure process and a development process using a mask including a light-transmitting portion and a light-blocking portion. A pre-baking process may be performed at a first temperature between the process of coating the photosensitive material layer and the exposure process, and a post-baking process may be performed at a second temperature after the first photosensitive layer 1100 and the second photosensitive layer 1200 are formed. The first temperature may be in the range of about 105°C to about 110°C, and the second temperature may be greater than the first temperature. For example, the second temperature may be in the range of about 130°C to about 135°C. Through the post-baking process, the adhesion with the conductive material layer 200 may be improved.

[0063] like Figure 2 As shown in , the conductive material layer 200 can be etched to form a pixel electrode 210 and a wiring 220. An etching process (e.g., a wet etching process) can be performed on the conductive material layer 200 by using the first photosensitive layer 1100 and the second photosensitive layer 1200 as a mask. The pixel electrode 210 can be formed under the first photosensitive layer 1100 by an etching process, and the wiring 220 can be formed under the second photosensitive layer 1200 by an etching process. The pixel electrode 210 can have a planar shape corresponding to the first photosensitive layer 1100, and the wiring 220 can have a planar shape corresponding to the second photosensitive layer 1200. For example, the pixel electrode 210 and the wiring 220 may include the same material. The pixel electrode 210 can be electrically connected to the thin film transistor TFT through the contact hole CNT of the planarization insulating layer 170.

[0064] like Figure 3 As shown in , the first photosensitive layer 1100 and the second photosensitive layer 1200 respectively located on the pixel electrode 210 and the wiring 220 may be ashed. Ashing may use oxygen. The ashed first photosensitive layer 1100 and the ashed second photosensitive layer 1200 may be reduced in size. The edge portion of the pixel electrode 210 and the edge portion of the wiring 220 may be exposed by the ashing process. Ashing may be different from a stripping process. The ashing process may reduce the thickness and width of the first photosensitive layer 1100 and the second photosensitive layer 1200 as a whole.

[0065] like Figure 4 As shown in FIG, a color material layer 180M may be coated on the ashed first photosensitive layer 1100 and the ashed second photosensitive layer 1200, and the color material layer 180M may be exposed by using a mask 1400. The mask 1400 may include a light transmitting portion 1401 and a light blocking portion 1402.

[0066] Colored material layer 180M may be coated on the entire substrate 100 to cover first photosensitive layer 1100 and second photosensitive layer 1200. Colored material layer 180M may have different photosensitivity from first photosensitive layer 1100 and second photosensitive layer 1200. Colored material layer 180M may include a negative photosensitive material.

[0067] Light-transmitting portion 1401 of mask 1400 may not overlap first photosensitive layer 1100 and second photosensitive layer 1200, and light-blocking portion 1402 may overlap first photosensitive layer 1100 and second photosensitive layer 1200. Therefore, a portion of colored material layer 180M overlapping first photosensitive layer 1100 and second photosensitive layer 1200 may not be exposed, and the remaining portion of colored material layer 180M may be exposed.

[0068] In light blocking portion 1402 of mask 1400, first width W1 of light blocking portion 1402 overlapping first photosensitive layer 1100 may be equal to or similar to second width W2 of first photosensitive layer 1100. First width W1 being similar to second width W2 may mean that the difference between first width W1 and second width W2 is less than about 10% of first width W1 or less than about 10% of second width W2.

[0069] In light blocking portion 1402 of mask 1400, third width W3 of light blocking portion 1402 overlapping second photosensitive layer 1200 may be equal to or similar to fourth width W4 of second photosensitive layer 1200. Third width W3 being similar to fourth width W4 may mean that the difference between third width W3 and fourth width W4 is less than about 10% of third width W3 or less than about 10% of fourth width W4.

[0070] The exposed colored material layer 180M can be developed. Figure 5 As shown in , a pixel defining layer 180 including a first opening 1801 and a second opening 1802 may be formed over a substrate 100 .

[0071] The pixel defining layer 180 may have a colored material. For example, the pixel defining layer 180 may have a colored pigment, for example, a pigment of a specific color such as white or black. In one embodiment, the pixel defining layer 180 may have a black color. For example, the pixel defining layer 180 may include a polyimide (PI)-based adhesive and a mixture of red, green, and blue pigments. As another example, the pixel defining layer 180 may include a cardo-based adhesive resin and a mixture of a lactam black pigment and a blue pigment. As another example, the pixel defining layer 180 may include carbon black.

[0072] Because the pixel defining layer 180 is formed of the colored material layer 180M, the pixel defining layer 180 may have negative photosensitivity. Because the pixel defining layer 180 includes a colored pigment, the pixel defining layer 180 may prevent reflection of external light. The pixel defining layer 180 including the colored pigment may prevent reflection of external light traveling toward the light-emitting display device from the outside, and may improve the contrast of the light-emitting display device.

[0073] The substrate 100 on which the pixel defining layer 180, the first photosensitive layer 1100 and the second photosensitive layer 1200 are disposed may be completely exposed. Since the first photosensitive layer 1100 and the second photosensitive layer 1200 include a positive photosensitive material, the first photosensitive layer 1100 and the second photosensitive layer 1200 are easily dissolved in a developer by the above exposure. The first photosensitive layer 1100 and the second photosensitive layer 1200 may be developed, and as shown in FIG. Figure 6 As shown in FIG. 1 , the first photosensitive layer 1100 and the second photosensitive layer 1200 may be removed. After the first photosensitive layer 1100 and the second photosensitive layer 1200 are removed by developing, a curing process may be performed at a specific temperature.

[0074] The edge portion of the pixel electrode 210 may be covered by the pixel defining layer 180. The edge portion of the pixel electrode 210 may be in direct contact with the pixel defining layer 180 while overlapping with the pixel defining layer 180. After the first photosensitive layer 1100 is removed, the portion of the pixel electrode 210 covered by the first photosensitive layer 1100 may be exposed. The central portion of the pixel electrode 210 may overlap with the first opening 1801 of the pixel defining layer 180 and may be exposed through the first opening 1801.

[0075] The edge portion of the wiring 220 may be covered by the pixel defining layer 180. The edge portion of the wiring 220 may overlap with the pixel defining layer 180 and may be in direct contact with the pixel defining layer 180. When the second photosensitive layer 1200 is removed, the portion of the wiring 220 covered by the second photosensitive layer 1200 may be exposed. The central portion of the wiring 220 may overlap with the second opening 1802 of the pixel defining layer 180 and may be exposed through the second opening 1802.

[0076] The size of the first opening 1801 may be smaller than the size of the pixel electrode 210, and the size of the second opening 1802 may be smaller than the size of the wiring 220. In this regard, Figure 6 It is shown that the fifth width W5 of the first opening 1801 is smaller than the sixth width W6 of the pixel electrode 210 , and the seventh width W7 of the second opening 1802 is smaller than the eighth width W8 of the wiring 220 .

[0077] Because the reference above Figures 1 to 6 In the described process, the region of the pixel electrode 210 exposed by the first opening 1801 is covered by the first photosensitive layer 1100 , so the region of the pixel electrode 210 does not contact the colored material constituting the pixel defining layer 180 .

[0078] As a comparative example, there is a method in which the pixel defining layer is formed by completely coating the material for forming the pixel defining layer on the pixel electrode, while omitting the process of forming the first photosensitive layer and the second photosensitive layer, and then exposing and developing the coated material. The portion of the pixel defining layer 180 located in the area corresponding to the central portion of the pixel electrode 210 is removed to form the first opening, but the residue that is not removed remains on the pixel electrode 210. Such residues may cause dark spots. In order to minimize the generation of dark spots, a descum process may be performed to remove the residue. However, when the descum process is performed, the generation of dark spots at the central portion of the pixel electrode 210 is reduced, but dark spots are still generated at the edge portion of the pixel electrode 210, for example, dark spots are still generated at the edge portion of the first opening 1801.

[0079] However, according to the embodiment, when executing the above reference Figures 1 to 6 During the described process, the central portion of the pixel electrode 210 does not contact the material constituting the pixel defining layer 180. Therefore, there is no need to perform the above-described descum process, and generation of dark spots due to residues of the material constituting the pixel defining layer 180 can be prevented.

[0080] 7A to 7C is a schematic cross-sectional view illustrating a portion of a process of manufacturing a light emitting display device according to an embodiment.

[0081] Refer to above Figure 4 In the described process, due to factors such as alignment between the substrate 100 and the mask 1400, exposure time and exposure amount, such as Fig. 7A As shown in FIG. 1 , the colored material layer 180M may overlap with an edge portion of the first photosensitive layer 1100 . Similarly, the pixel defining layer 180 may overlap with an edge portion of the second photosensitive layer 1200 .

[0082] As mentioned above Figure 5 and Figure 6 As described above, when the substrate 100 is completely exposed and then developed, the first photosensitive layer 1100 and the second photosensitive layer 1200 may be removed, and as shown in FIG. Figure 7B As shown in FIG. 1 , the pixel defining layer 180 may include an inversely tapered inclined surface (see FIG. Figure 7B In the case where the pixel defining layer 180 includes an inverted tapered surface, a functional layer and / or an opposing electrode to be formed in a subsequent process may be broken. However, according to an embodiment, a portion of the pixel defining layer 180 may be reflowed by a curing process performed after removing the first photosensitive layer 1100 and the second photosensitive layer 1200. Figure 7C As shown in , the portion of the pixel defining layer 180 defining the first opening 1801 and the second opening 1802 may include a positive tapered inclined surface while contacting or connecting to the upper surface of the pixel electrode 210 and the upper surface of the wiring 220.

[0083] Figure 8 is a plan view illustrating a process of manufacturing a light-emitting display device according to an embodiment, which shows pixel electrodes and wirings. Figure 8 The plan view may correspond to the above reference when viewed in a direction perpendicular to the substrate 100. Figure 2 FIG. 2 is a plan view of a pixel electrode 210 and a wiring 220 formed in the process described above. Figure 8 Omitted Figure 2 The first photosensitive layer 1100 and the second photosensitive layer 1200 are shown in FIG.

[0084] The pixel electrode 210 is an island type and may be spaced apart from the wiring 220. Figure 2 and Figure 8, the pixel electrode 210 may include a first portion 210A for electrically connecting to the thin film transistor TFT and a second portion 210B connected to the first portion 210A. The first portion 210A is a portion for electrically connecting to the thin film transistor TFT disposed below the pixel electrode 210, and the first portion 210A may be connected to the thin film transistor TFT through the contact hole CNT. The second portion 210B may be integrally connected to the first portion 210A, and may have a relatively larger area than that of the first portion 210A.

[0085] Fig. 9 is a plan view illustrating a process of manufacturing a light-emitting display device according to an embodiment, which shows a pixel defining layer located on a pixel electrode and a wiring. Fig. 9 The plan view may correspond to the above reference when viewed in a direction perpendicular to the substrate 100. Figure 6 and Figure 7C A plan view when describing a cross-sectional structure.

[0086] The pixel defining layer 180 may be disposed on the pixel electrode 210 and the wiring 220 and may cover edge portions of the pixel electrode 210 and the wiring 220. The first opening 1801 of the pixel defining layer 180 overlaps the pixel electrode 210, and the second opening 1802 overlaps the wiring 220.

[0087] Refer to above Figures 1 to 6 and 7A to 7C In the described process, the pixel electrode 210 and the wiring 220 may be formed by the first photosensitive layer 1100 and the second photosensitive layer 1200, and the pixel defining layer 180 having the first opening 1801 and the second opening 1802 may be formed by using the ashed first photosensitive layer 1100 and the ashed second photosensitive layer 1200. Therefore, when viewed in a plan view, the first opening 1801 has a size different from that of the pixel electrode 210, but may have a shape substantially the same as that of the pixel electrode 210. Similarly, when viewed in a plan view, the second opening 1802 has a size different from that of the wiring 220, but may have a planar shape substantially the same as that of the wiring 220.

[0088] The first opening 1801 may also be connected to the pixel electrode 210 and the thin film transistor TFT ( Figure 6 and Figure 7C) overlap with the contact hole CNT electrically connected between them. The edge of the first opening 1801 may be spaced apart from the edge of the pixel electrode 210. For example, the first edge of the first opening 1801 and the first edge of the pixel electrode 210 adjacent to each other may be spaced apart by a first distance d1, and the second edge of the first opening 1801 and the second edge of the pixel electrode 210 may be spaced apart by a second distance d2. The third edge of the first opening 1801 and the third edge of the pixel electrode 210 may be spaced apart by a third distance d3, the fourth edge of the first opening 1801 and the fourth edge of the pixel electrode 210 may be spaced apart by a fourth distance d4, and the fifth edge of the first opening 1801 and the fifth edge of the pixel electrode 210 may be spaced apart by a fifth distance d5. Because the ashing is performed by using the first photosensitive layer 1100 (which is smaller than the pixel electrode 210) as described above. Figure 2 ) is used to form the pixel defining layer 180, so the first distance d1, the second distance d2, the third distance d3, the fourth distance d4 and the fifth distance d5 described above may be substantially the same as each other.

[0089] Similarly, one edge of the second opening 1802 may be spaced apart from one edge of the wiring 220 by a sixth distance d6, and the other edge of the second opening 1802 may be spaced apart from the other edge of the wiring 220 by a seventh distance d7. The sixth distance d6 and the seventh distance d7 may be substantially the same as each other.

[0090] FIG. 10A to FIG. 10C is a schematic cross-sectional view illustrating a process of manufacturing a light emitting display device according to an embodiment.

[0091] Reference Fig. 10A , which can be referenced above Figures 6 to 7C The spacer 191 is formed on the pixel defining layer 180 as described above. The spacer 191 may include a material different from that of the pixel defining layer 180. In one embodiment, the spacer 191 may include a polyimide-based resin, for example, a photosensitive polyimide-based resin. The spacer 191 may overlap with a material portion other than the opening of the pixel defining layer 180.

[0092] In the process of forming the spacer 191, the insulating layer 192 may be formed to cover the second opening 1802. The insulating layer 192 may include the same material as that of the spacer 191. The insulating layer 192 may cover the wiring 220 exposed through the second opening 1802. In an embodiment, when an intermediate layer (see Fig. 10B ), a signal to be provided to the pixel circuit including the thin film transistor TFT and the storage capacitor Cap may not be provided through the wiring 220. Therefore, the insulating layer 192 may be formed to cover the wiring 220.

[0093] like Fig. 10B As shown, an intermediate layer 224 and an opposing electrode 230 may be formed. The intermediate layer 224 may include a first functional layer 221, an emission layer 222, and a second functional layer 223 sequentially stacked. The emission layer 222 may overlap only the pixel electrode 210 and / or the first opening 1801, but the first functional layer 221 and the second functional layer 223 may be formed to cover the entire substrate 100.

[0094] The emission layer 222 may include an organic material. The emission layer 222 may include a high molecular weight organic material or a low molecular weight organic material that emits light of a specific color. The emission layer 222 may be formed by a deposition process using a mask.

[0095] The first functional layer 221 may be a single layer or a multilayer. In the case where the first functional layer 221 is formed of a high molecular weight material, the first functional layer 221 is a hole transport layer (HTL) having a single layer structure, and may be formed of poly-(3,4)-ethylene-dihydroxythiophene (PEDOT) or polyaniline (PANI). In the case where the first functional layer 221 is formed of a low molecular weight material, the first functional layer 221 may include a hole injection layer (HIL) and the HTL. The first functional layer 221 may be formed, for example, by thermal deposition.

[0096] The second functional layer 223 may be optional. In the case where the first functional layer 221 and the emission layer 222 are formed of a high molecular weight material, the second functional layer 223 may be formed. The second functional layer 223 may be a single layer or a multilayer. The second functional layer 223 may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The second functional layer 223 may be formed by, for example, thermal deposition.

[0097] The opposing electrode 230 may be formed of a conductive material having a relatively low work function. For example, the opposing electrode 230 may include a (semi) transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), lithium (Li), calcium (Ca) and / or any alloy thereof. Alternatively, the opposing electrode 230 may also include a conductive material such as ITO, IZO, ZnO or In on the (semi) transparent layer containing the above materials. 2 O 3 In one embodiment, the opposing electrode 230 may include silver (Ag) and magnesium (Mg). In one embodiment, the opposing electrode 230 may be formed by thermal deposition.

[0098] The stack structure in which the pixel electrode 210 , the intermediate layer 224 , and the opposite electrode 230 are sequentially stacked may form a light emitting diode, for example, an organic light emitting diode OLED.

[0099] Reference Fig. 10C , a thin film encapsulation layer 300 and an optical function layer 400 may be formed on the organic light emitting diode OLED.

[0100] The thin film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In one embodiment, the thin film encapsulation layer 300 may include first and second inorganic encapsulation layers 310 and 330 and an organic encapsulation layer 320 between the first and second inorganic encapsulation layers 310 and 330 .

[0101] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may each include one or more inorganic insulating materials. The inorganic insulating material may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride and / or silicon oxynitride. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be formed by chemical vapor deposition.

[0102] The organic encapsulation layer 320 may include a polymer material. The polymer material may include acrylic resin, epoxy resin, polyimide, polyethylene, etc. For example, the organic encapsulation layer 320 may include an acrylic resin such as polymethyl methacrylate or polyacrylic acid. The organic encapsulation layer 320 may be formed by curing a monomer or coating a polymer.

[0103] The optical function layer 400 is an element that prevents reflection of external light, and may include a color filter 410 and a black matrix 420. Compared with a display device including a polarizing plate, a light-emitting display device including the optical function layer 400 may significantly reduce the thickness of the light-emitting display device, the optical function layer 400 including the color filter 410 and the black matrix 420. In an embodiment, the black matrix 420 may be adjacent to the color filter 410. In another embodiment, the black matrix 420 may surround the color filter 410.

[0104] The color filter 410 may overlap the first opening 1801 of the pixel defining layer 180 , and light emitted from the organic light emitting diode OLED passes through the thin film encapsulation layer 300 and the color filter 410 .

[0105] The black matrix 420 may overlap with the wiring 220 and the second opening 1802, and a portion of the black matrix 420 may overlap with a portion of the first opening 1801. For example, the black matrix 420 may overlap with a portion of the first opening 1801 and the contact hole CNT. When viewed in a direction perpendicular to the substrate 100, the contact hole CNT overlaps with the black matrix 420 and is covered by the black matrix 420.

[0106] Fig.11 is a plan view illustrating a process of manufacturing a light emitting display device according to an embodiment. Fig.11 Shows the formation of Fig. 9 The structure of the optical function layer 400 in a plan view is shown in FIG.

[0107] Reference Fig.11 , the color filter 410 of the optical function layer 400 may overlap with the first opening 1801. The ninth width W9 of the color filter 410 measured in one direction may be equal to or less than the fifth width W5 of the first opening 1801 measured in one direction as described above. In one embodiment, Fig.11 It is shown that the ninth width W9 is smaller than the fifth width W5.

[0108] The black matrix 420 may overlap the edge portion of the pixel electrode 210 and the contact hole CNT. In addition, the black matrix 420 may overlap the wiring 220 , the second opening 1802 overlapping the wiring 220 , and the insulating layer 192 covering the second opening 1802 .

[0109] Fig.12 is a schematic diagram showing an equivalent circuit of a pixel circuit connected to a light emitting diode (eg, an organic light emitting diode) of a light emitting display device according to an embodiment.

[0110] Reference Fig.12 , the pixel circuit may include a thin film transistor and a storage capacitor. According to an embodiment, as Fig.12 As shown in FIG, the thin film transistor may include a driving thin film transistor T1, a switching thin film transistor T2, a compensation thin film transistor T3, a first initialization thin film transistor T4, an operation control thin film transistor T5, an emission control thin film transistor T6 and a second initialization thin film transistor T7.

[0111] The gate electrode of the driving thin film transistor T1 is electrically connected to the electrode of the storage capacitor Cap. One of the source electrode and the drain electrode of the driving thin film transistor T1 is electrically connected to the driving voltage line PL through the operation control thin film transistor T5. The other of the source electrode and the drain electrode of the driving thin film transistor T1 is electrically connected to the pixel electrode of the organic light emitting diode OLED through the emission control thin film transistor T6. The driving thin film transistor T1 receives the data signal Dm according to the switching operation of the switching thin film transistor T2, and supplies the driving current Id to the organic light emitting diode OLED.

[0112] The gate electrode of the switching thin film transistor T2 is electrically connected to the first scan line SWL. One of the source electrode and the drain electrode of the switching thin film transistor T2 is electrically connected to the data line DL. The other of the source electrode and the drain electrode of the switching thin film transistor T2 is electrically connected to the driving thin film transistor T1, and is electrically connected to the driving voltage line PL by operating the control thin film transistor T5. The switching thin film transistor T2 is turned on according to the scan signal GW received through the first scan line SWL, and performs a switching operation to transmit the data signal Dm received through the data line DL to the driving thin film transistor T1.

[0113] The gate electrode of the compensation thin film transistor T3 is electrically connected to the first scan line SWL. One of the source electrode and the drain electrode of the compensation thin film transistor T3 is electrically connected to the driving thin film transistor T1, and is electrically connected to the pixel electrode of the organic light emitting diode OLED through the emission control thin film transistor T6. The other of the source electrode and the drain electrode of the compensation thin film transistor T3 is electrically connected to the electrode of the storage capacitor Cap, the first initialization thin film transistor T4, and the driving thin film transistor T1. The compensation thin film transistor T3 is turned on according to the scan signal GW received through the first scan line SWL, and the gate electrode of the driving thin film transistor T1 is electrically connected to one of the source electrode and the drain electrode of the driving thin film transistor T1 (for example, the drain electrode), thereby connecting the driving thin film transistor T1 in a diode manner.

[0114] The gate electrode of the first initialization thin film transistor T4 is electrically connected to the second scan line SIL. One of the source electrode and the drain electrode of the first initialization thin film transistor T4 is electrically connected to the second initialization thin film transistor T7 and the initialization voltage line VL. The other of the source electrode and the drain electrode of the first initialization thin film transistor T4 is electrically connected to the electrode of the storage capacitor Cap, the compensation thin film transistor T3, and the driving thin film transistor T1. The first initialization thin film transistor T4 is turned on according to the previous scan signal GI received through the second scan line SIL, and performs an initialization operation to transmit the initialization voltage Vint to the gate electrode of the driving thin film transistor T1, so that the voltage of the gate electrode of the driving thin film transistor T1 is initialized.

[0115] The gate electrode of the operation control thin film transistor T5 is electrically connected to the emission control line EL. One of the source electrode and the drain electrode of the operation control thin film transistor T5 is electrically connected to the driving voltage line PL. The other of the source electrode and the drain electrode of the operation control thin film transistor T5 is electrically connected to the driving thin film transistor T1 and the switching thin film transistor T2.

[0116] The gate electrode of the emission control thin film transistor T6 is electrically connected to the emission control line EL. One of the source electrode and the drain electrode of the emission control thin film transistor T6 is electrically connected to the driving thin film transistor T1 and the compensation source electrode of the compensation thin film transistor T3. The other of the source electrode and the drain electrode of the emission control thin film transistor T6 is electrically connected to the second initialization thin film transistor T7 and the pixel electrode of the organic light emitting diode OLED.

[0117] The operation control thin film transistor T5 and the emission control thin film transistor T6 are simultaneously turned on according to the emission control signal En received through the emission control line EL and transmit the driving voltage ELVDD to the organic light emitting diode OLED so that the driving current Id flows through the organic light emitting diode OLED.

[0118] The gate electrode of the second initialization thin film transistor T7 is electrically connected to the second scan line SIL. One of the source electrode and the drain electrode of the second initialization thin film transistor T7 is electrically connected to the emission control thin film transistor T6 and the pixel electrode of the organic light emitting diode OLED. The other of the source electrode and the drain electrode of the second initialization thin film transistor T7 is electrically connected to the first initialization thin film transistor T4 and the initialization voltage line VL. The second initialization thin film transistor T7 is turned on according to the previous scan signal GI received through the second scan line SIL, and initializes the pixel electrode of the organic light emitting diode OLED.

[0119] exist Fig.12 , an embodiment in which the first initialization thin film transistor T4 and the second initialization thin film transistor T7 are electrically connected to the second scan line SIL is shown, but the embodiment is not limited thereto. In another embodiment, the first initialization thin film transistor T4 may be electrically connected to the second scan line SIL and driven according to the previous scan signal GI, and the second initialization thin film transistor T7 may be electrically connected to the first scan line or the second scan line of the pixels arranged (or set) in the previous row or the next row of the pixels P.

[0120] One electrode of the storage capacitor Cap is electrically connected to the driving voltage line PL, and an opposite electrode of the organic light emitting diode OLED is electrically connected to the common voltage ELVSS. Therefore, the organic light emitting diode OLED may receive the driving current Id from the driving thin film transistor T1 and emit light to display an image.

[0121] Already referred to Fig.12 An embodiment in which the pixel circuit PC includes seven thin film transistors and one storage capacitor is described, but the embodiment is not limited thereto. The number of thin film transistors and the number of storage capacitors may be variously changed according to the design of the pixel circuit PC.

[0122] Refer to above Fig.11 The wiring 220 described above may be Fig.12 One of the lines described above, such as the driving voltage line PL, the initialization voltage line VL, and the data line DL. For example, the wiring 220 may correspond to the initialization voltage line VL configured to provide the initialization voltage Vint.

[0123] In another embodiment, the wiring 220 may correspond to a line configured to provide a signal or voltage different from a signal or voltage of a line connected to a pixel circuit (e.g., a driving voltage line, an initialization voltage line, and a data line, etc.). The structure of the cross section and the plane on the wiring 220 may be different from that described above with reference to Fig. 10C and Fig.11 The structure described here will be referred to FIG. 13A to FIG. 13C and Fig.14 To describe the structure.

[0124] FIG. 13A to FIG. 13E is a schematic cross-sectional view illustrating a process of manufacturing a light emitting display device according to an embodiment.

[0125] Reference Fig.13A , which can be referenced above Figure 6 or Figure 7C The spacer 191 is formed on the pixel defining layer 180 as described above. The spacer 191 may include a material different from that of the pixel defining layer 180. In one embodiment, the spacer 191 may include a polyimide-based resin, for example, a photosensitive polyimide-based resin. The spacer 191 may overlap with a material portion other than the openings (for example, the first opening 1801 and the second opening 1802) of the pixel defining layer 180.

[0126] like Fig. 13B As shown in , an intermediate layer 224 may be formed. The intermediate layer 224 may include a first functional layer 221, an emission layer 222, and a second functional layer 223 sequentially stacked. The emission layer 222 may overlap with the pixel electrode 210, but the first functional layer 221 and the second functional layer 223 may be formed to cover the entire substrate 100. The materials of the emission layer 222, the first functional layer 221, and the second functional layer 223 are the same as those described above.

[0127] For example, a portion of the intermediate layer 224 of the first functional layer 221 and / or the second functional layer 223 may be positioned on the wiring 220 through the second opening 1802. The first functional layer 221 may be in direct contact with the wiring 220 through the second opening 1802.

[0128] like Fig. 13CAs shown in , a portion of the first functional layer 221 located on the wiring 220 and a portion of the second functional layer 223 located on the wiring 220 may be removed to form a first hole 221h of the first functional layer 221 and a second hole 223h of the second functional layer 223. The first hole 221h and the second hole 223h may overlap with the second opening 1802, and the wiring 220 may be exposed through the first hole 221h and the second hole 223h. The first hole 221h and the second hole 223h may be formed by irradiating a laser beam.

[0129] like Fig.13D As shown in FIG. 2 , an opposing electrode 230 is formed. The material of the opposing electrode 230 is the same as that described above.

[0130] The stacked structure in which the pixel electrode 210, the intermediate layer 224, and the opposing electrode 230 are sequentially stacked may form a light emitting diode, for example, an organic light emitting diode OLED. A portion of the opposing electrode 230 may be electrically connected to the wiring 220. A portion of the opposing electrode 230 may be in direct contact with the wiring 220 exposed through the first hole 221h and the second hole 223h. The wiring 220 may be a layer capable of providing a common voltage ELVSS ( Fig.12 ). When the light-emitting display device has a relatively large size, the bus may be arranged adjacent to the pixel electrode in the display area to prevent a voltage drop of the opposite electrode. The display area refers to an image plane or screen area on which the light-emitting display device can provide an image. Fig.13D The wiring 220 shown in FIG. 2 may correspond to the bus line described above, and may be configured to provide the common voltage ELVSS to the opposite electrode 230 .

[0131] like Fig.13E As shown in FIG. 1 , a thin film encapsulation layer 300 and an optical function layer 400 may be formed on an organic light emitting diode OLED. The detailed structures of the thin film encapsulation layer 300 and the optical function layer 400 are the same as those described above with reference to FIG. Fig. 10C The detailed structures are the same as those described.

[0132] The color filter 410 may overlap the first opening 1801 of the pixel defining layer 180 , and light emitted from the organic light emitting diode OLED passes through the thin film encapsulation layer 300 and the color filter 410 .

[0133] The black matrix 420 may overlap with the wiring 220 and the second opening 1802, and a portion of the black matrix 420 may overlap with a portion of the first opening 1801. The black matrix 420 may overlap with a portion of the first opening 1801 and the contact hole CNT. When viewed in a direction perpendicular to the substrate 100, the contact hole CNT overlaps with the black matrix 420 and is covered by the black matrix 420.

[0134] Fig.14 is a plan view illustrating a process of manufacturing a light emitting display device according to an embodiment. Fig.14 It may correspond to when viewed in a direction perpendicular to the substrate 100 Fig.13E The structure shown in is a planar structure.

[0135] Reference Fig.14 , the color filter 410 of the optical function layer 400 may overlap with the first opening 1801. The ninth width W9 of the color filter 410 measured in the same direction may be equal to or less than the fifth width W5 of the first opening 1801. In one embodiment, Fig.14 It is shown that the ninth width W9 is smaller than the fifth width W5.

[0136] The black matrix 420 may overlap the edge portion of the pixel electrode 210 and the contact hole CNT. The black matrix 420 may overlap the wiring 220, the second opening 1802 overlapping the wiring 220, and the first and second holes 221h and 223h overlapping the second opening 1802.

[0137] The embodiment can provide a light emitting display device capable of preventing the generation of dark spots and preventing the degradation of contrast without adding a mask.

[0138] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although the embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope defined by the present disclosure.

Claims

1. A method for manufacturing a light-emitting display device, wherein: The method comprises: forming a first photosensitive layer on the conductive material layer; forming a second photosensitive layer on the conductive material layer; etching the conductive material layer by using the second photosensitive layer as a mask to form wiring; etching the conductive material layer by using the first photosensitive layer as a mask to form a pixel electrode; ashing the first photosensitive layer disposed on the pixel electrode and the second photosensitive layer disposed on the wiring, wherein the ashed first photosensitive layer and the ashed second photosensitive layer are reduced in size, so that edge portions of the pixel electrode and edge portions of the wiring are exposed by the ashing; forming a pixel defining layer and a second opening, wherein the pixel defining layer covers an edge portion of the pixel electrode and includes a first opening overlapping the ashed first photosensitive layer, and a second opening overlapping the ashed second photosensitive layer and spaced apart from the first opening; removing the ashed first photosensitive layer disposed in the first opening and the ashed second photosensitive layer disposed in the second opening; forming an intermediate layer including a functional layer and an emission layer on the pixel defining layer, wherein the functional layer includes a hole transport layer, or a hole transport layer and a hole injection layer, Wherein, the emission layer overlaps with the pixel electrode and the first opening; forming a counter electrode on the intermediate layer; and An optical function layer is formed, the optical function layer including a color filter overlapping the first opening and a black matrix adjacent to the color filter and overlapping a portion of the first opening and the second opening.

2. The method according to claim 1, wherein: The forming of the pixel defining layer comprises: forming a colored material layer on the ashed first photosensitive layer; exposing a portion of the colored material layer to light; and The first opening is formed by developing the exposed portion of the colored material layer.

3. The method according to claim 2, wherein: The pixel defining layer includes a negative photosensitive material.

4. The method according to claim 3, wherein: The method further comprises: After forming the first opening, the pixel defining layer is cured.

5. The method according to claim 3, wherein: The pixel defining layer further includes a color pigment or carbon black.

6. The method according to claim 1, wherein: In a plan view, a shape of the first opening is the same as a shape of the pixel electrode.

7. The method according to claim 1, wherein: The method further comprises: forming a thin film transistor; and An insulating layer is formed between the thin film transistor and the pixel electrode, wherein: The forming of the insulating layer includes: forming a contact hole for electrical connection between the thin film transistor and the pixel electrode, and The first opening overlaps with the contact hole.

8. The method according to claim 7, wherein: The black matrix overlaps with the contact hole.

9. The method according to claim 1, wherein: The method further comprises: An insulating layer is formed to overlap with the second opening and to be disposed between the wiring and the intermediate layer.

10. The method according to claim 1, wherein: The method further comprises: forming a hole in a portion of the functional layer overlapping the wiring, The counter electrode is formed to be in electrical contact with the wiring through the hole.

11. A light emitting display device, wherein: The light emitting display device comprises: substrate; A thin film transistor is located on the substrate; A pixel electrode electrically connected to the thin film transistor; A first insulating layer, disposed between the thin film transistor and the pixel electrode; a pixel defining layer covering an edge portion of the pixel electrode and comprising a first opening overlapping the pixel electrode; The middle layer includes: an emission layer overlapping the first opening; and Functional layers, including a hole transport layer, or a hole transport layer and a hole injection layer; a counter electrode disposed on the intermediate layer; and an optical function layer, comprising a color filter and a black matrix, wherein the color filter overlaps the first opening, the black matrix is ​​adjacent to the color filter and overlaps a portion of the first opening, wherein the pixel defining layer is formed of a colored material layer and has negative photosensitivity, wherein the first insulating layer comprises a contact hole for electrical connection between the thin film transistor and the pixel electrode, and When viewed in a direction perpendicular to the substrate, the contact hole overlaps with the first opening and the contact hole is covered by the black matrix.

12. The light emitting display device according to claim 11, wherein: The pixel defining layer further includes a color pigment or carbon black.

13. The light emitting display device according to claim 11, wherein: When viewed in a direction perpendicular to the substrate, a shape of the first opening is the same as a shape of the pixel electrode.

14. The light emitting display device according to claim 11, wherein: A first distance from a first edge of the pixel electrode to a first edge of the first opening is the same as a second distance from a second edge of the pixel electrode to a second edge of the first opening.

15. The light emitting display device according to claim 11, wherein: The light emitting display device further includes a wiring spaced apart from the pixel electrode, Wherein, the wiring and the pixel electrode include the same material.

16. The light emitting display device according to claim 15, wherein: The pixel defining layer further includes a second opening covering an edge portion of the wiring and overlapping the wiring.

17. The light emitting display device according to claim 16, wherein: The second opening has the same shape as that of the wiring when viewed in a direction perpendicular to the substrate.

18. The light emitting display device according to claim 16, wherein: The light-emitting display device further comprises: The second insulating layer overlaps with the second opening.

19. The light emitting display device according to claim 18, wherein: The second insulating layer is provided between the wiring and the intermediate layer.

20. The light emitting display device according to claim 18, wherein: The light-emitting display device further comprises: A spacer is disposed on the pixel defining layer, wherein: The second insulating layer and the spacer include the same material.

21. The light emitting display device according to claim 20, wherein: The pixel defining layer and the spacer include different materials.

22. The light emitting display device according to claim 18, wherein: The light-emitting display device further comprises: A driving thin film transistor electrically connected to the thin film transistor; an initialization thin film transistor electrically connected to the gate electrode of the driving thin film transistor or the pixel electrode; and an initialization voltage line electrically connected to the initialization thin film transistor, Wherein, the wiring includes the initialization voltage line.

23. The light emitting display device according to claim 16, wherein: The functional layer includes a hole overlapping the second opening.

24. The light emitting display device according to claim 23, wherein: The counter electrode is in electrical contact with the wiring through the hole.

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