Pseudo wafer cleaning platform, semiconductor apparatus, and semiconductor process method

Abstract

This invention relates to a dummy wafer cleaning platform, semiconductor equipment, and semiconductor processing method, comprising: a rotating platform; a first dummy wafer adsorption device disposed at the center of the rotating platform; a second dummy wafer adsorption device disposed on the upper surface of the rotating platform; the distance between the top of the second dummy wafer adsorption device and the upper surface of the rotating platform is less than the maximum distance between the top of the first dummy wafer adsorption device and the upper surface of the rotating platform, and greater than the minimum distance between the top of the first dummy wafer adsorption device and the upper surface of the rotating platform; and a cleaning nozzle disposed on the upper surface of the rotating platform, the distance between the top of the cleaning nozzle and the upper surface of the rotating platform being less than the distance between the top of the second dummy wafer adsorption device and the upper surface of the rotating platform. The wafer cleaning platform can clean the back side of dummy wafers, reducing contamination of the wafer chucks in the semiconductor equipment, improving product yield, increasing production efficiency, and extending the service life of the wafer chucks.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit technology, and in particular to a pseudo-wafer cleaning platform, semiconductor equipment, and semiconductor process method. Background Technology

[0002] To improve the stability of the initial manufacturing process, dummy wafers are widely used. When, for example, the main exposure unit is idle for an extended period, to ensure exposure quality, two dummy wafers (Chuck Temperature Control wafers, CTC wafers) are run under the same exposure conditions as the process wafers before running the next batch of process wafers. This ensures the exposure unit reaches the ideal exposure conditions. It should be noted that a CTC wafer is a type of dummy wafer, and dummy wafers can be categorized into many types based on their function.

[0003] However, in the existing process, after the chuck temperature-controlled wafer completes its run, it is directly transferred back to the storage chamber by the main unit. When needed again, the chuck temperature-controlled wafer is directly transferred to the process chamber of the main unit for exposure. If the back side of the chuck temperature-controlled wafer is contaminated due to human error, environmental factors, or other reasons, i.e., if the back side of the chuck temperature-controlled wafer has particle defects, these particles will fall onto the worktable (e.g., wafer chucks such as electrostatic chucks or vacuum chucks) during the chuck temperature-controlled wafer run, affecting the exposure quality and yield of the process wafer. Furthermore, it contaminates the worktable. When the worktable is contaminated, it is necessary to manually grind off the contaminants with marble, which will affect production efficiency and the lifespan of the worktable. Summary of the Invention

[0004] Therefore, it is necessary to provide a pseudo-wafer cleaning platform, semiconductor equipment, and semiconductor process method to address the above problems, thereby reducing contamination of the worktable, improving product yield, reducing the amount of chuck temperature control wafers used, improving production efficiency, reducing worktable wear, and extending the worktable's service life.

[0005] A pseudo-wafer cleaning platform, comprising:

[0006] Rotating platform;

[0007] The first pseudo-wafer adsorption device is located at the center of the rotating platform and can move up and down in a direction perpendicular to the upper surface of the rotating platform.

[0008] The second pseudo-wafer adsorption device is disposed on the upper surface of the rotating platform and located outside the first pseudo-wafer adsorption device; the distance between the top of the second pseudo-wafer adsorption device and the upper surface of the rotating platform is less than the maximum distance between the top of the first pseudo-wafer adsorption device and the upper surface of the rotating platform, and greater than the minimum distance between the top of the first pseudo-wafer adsorption device and the upper surface of the rotating platform.

[0009] A cleaning nozzle is disposed on the upper surface of the rotating platform, and the distance between the top of the cleaning nozzle and the upper surface of the rotating platform is less than the distance between the top of the second pseudo-wafer adsorption device and the upper surface of the rotating platform.

[0010] The aforementioned wafer cleaning platform can clean the back side of dummy wafers when particle defects exist on the back side. This reduces contamination of the wafer chucks (i.e., worktables) in the main semiconductor equipment, improves product yield, reduces the amount of dummy wafers used, increases production efficiency, reduces wear on the wafer chucks, and extends their service life. By setting up a first dummy wafer adsorption device and a second dummy wafer adsorption device, different wafer adsorption devices can be used to adsorb dummy wafers during the cleaning process, thereby achieving separate cleaning of the back side and center of the dummy wafers.

[0011] In an optional embodiment, the center of the rotating platform is provided with a through hole extending through the rotating platform along the thickness direction;

[0012] The first pseudo-wafer adsorption device includes: a first support column and a first adsorption disk; the first support column is located in the through hole and passes through the rotating platform through the through hole; the first support column is connected to a first driving device and moves up and down under the drive of the first driving device; the first adsorption disk is located on the top of the first support column and above the rotating platform.

[0013] The second pseudo-wafer adsorption device includes: a second support column and a second adsorption disk; the bottom of the second support column is connected to the upper surface of the rotating platform; the second adsorption disk is disposed on the top of the second support column.

[0014] In an optional embodiment, the first pseudo-wafer adsorption device includes: a first support column and a first adsorption disk; the bottom of the first support column is connected to the upper surface of the rotating platform; the first support column is connected to a first driving device and moves up and down under the drive of the first driving device; the first adsorption disk is disposed on the top of the first support column and is located above the rotating platform.

[0015] The second pseudo-wafer adsorption device includes: a second support column and a second adsorption disk; the bottom of the second support column is connected to the upper surface of the rotating platform; the second adsorption disk is disposed on the top of the second support column.

[0016] A semiconductor device, comprising:

[0017] The main unit, the pseudo-wafer cleaning platform as described in any of the above embodiments, the storage chamber, the conveying device, and the control device; wherein...

[0018] The pseudo-wafer cleaning platform and the storage chamber are located on the side of the main unit;

[0019] The storage chamber is used to store dummy wafers;

[0020] The conveying device is connected to the control device and is used to convey the fake wafer between the main unit, the storage chamber and the fake wafer cleaning platform.

[0021] The control device is connected to the main unit and the conveying device, and is used to control the conveying device to convey the fake wafer to the storage chamber or the fake wafer cleaning platform when the main unit completes the process of processing the fake wafer.

[0022] The wafer cleaning platform in the aforementioned semiconductor equipment can clean the back side of dummy wafers when particle defects exist on the back side. This reduces contamination of the wafer chucks in the main unit of the semiconductor equipment, improves product yield, reduces the amount of dummy wafers used, increases production efficiency, reduces wear on the wafer chucks, and extends the service life of the wafer chucks. By setting up a first dummy wafer adsorption device and a second dummy wafer adsorption device, different wafer adsorption devices can be used to adsorb dummy wafers during the cleaning process, so as to achieve separate cleaning of the back side and center of the dummy wafer.

[0023] In an optional embodiment, the host machine includes a detection device for detecting whether there are particle defects on the back side of the pseudo wafer before the host machine performs process processing on the pseudo wafer, and when the particle defects are detected on the back side of the pseudo wafer, detecting whether there are the same number of similar particle defects on the back side of the process wafer that has completed the current preset master process.

[0024] In an optional embodiment, the semiconductor device further includes an alarm device connected to the detection device for triggering an alarm when the back side of the cleaned dummy wafer is found to have the same type of defect as before cleaning.

[0025] In an optional embodiment, the dummy wafer is a chuck temperature control wafer.

[0026] A semiconductor manufacturing process includes:

[0027] The back side of the fake wafer is inspected to determine whether there are particle defects on the back side of the fake wafer;

[0028] The pseudo wafer is processed to bring the process environment to the level required for the current preset main process processing of the process wafer.

[0029] The process wafer is subjected to the current preset master process;

[0030] If there are particle defects on the back side of the fake wafer, the back side of the process wafer after the current preset main process is inspected, and it is determined whether there are the same number of the same type of particle defects on the back side of the process wafer as on the back side of the fake wafer.

[0031] If the back side of the process wafer does not have the same number of similar particle defects as the back side of the fake wafer, the back side of the fake wafer is cleaned.

[0032] The aforementioned semiconductor process can clean the back side of a dummy wafer when particle defects exist there. This reduces contamination of the wafer chuck in the main semiconductor equipment, improves product yield, reduces the amount of dummy wafers used, increases production efficiency, reduces wear on the wafer chuck, and extends the lifespan of the wafer chuck. By setting up a first dummy wafer adsorption device and a second dummy wafer adsorption device, different wafer adsorption devices can be used to adsorb dummy wafers during the cleaning process, thereby achieving separate cleaning of the back side and center of the dummy wafer.

[0033] In an optional embodiment, the current preset master process is the exposure process of a batch of process wafers.

[0034] In an optional embodiment, after cleaning the back side of the dummy wafer, the process further includes:

[0035] The back side of the fake wafer is inspected to determine whether there are particle defects of the same type as before cleaning. If particle defects of the same type are found, an alarm is triggered. Attached Figure Description

[0036] Figure 1 This is a front view of a wafer cleaning platform in one embodiment of the present invention;

[0037] Figure 2 for Figure 1 A top view of the wafer cleaning platform shown in the diagram;

[0038] Figure 3 This is a structural block diagram of a semiconductor device in one embodiment of the present invention;

[0039] Figure 4 This is a flowchart of a semiconductor process method in one embodiment of the present invention;

[0040] Figure 5 This is a flowchart of a semiconductor process method in one embodiment of the present invention. Detailed Implementation

[0041] To facilitate understanding of the present invention, a more complete description will be given below with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0043] In the description of this invention, it should be understood that the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the method or positional relationship shown in the drawings, and are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0044] In one embodiment, such as Figure 1As shown, a dummy wafer cleaning platform 10 is provided. The wafer cleaning platform 10 includes: a rotating platform 11; a first dummy wafer adsorption device 12, which is disposed at the center of the rotating platform 11 and can move up and down in a direction perpendicular to the upper surface of the rotating platform 11; a second dummy wafer adsorption device 13, which is disposed on the upper surface of the rotating platform 11 and located around the first dummy wafer adsorption device 12; the distance between the top of the second dummy wafer adsorption device 13 and the upper surface of the rotating platform 11 is less than the maximum distance between the top of the first dummy wafer adsorption device 12 and the upper surface of the rotating platform 11, and greater than the minimum distance between the top of the first dummy wafer adsorption device 12 and the upper surface of the rotating platform 11; and a cleaning nozzle 14, which is disposed on the upper surface of the rotating platform 11 and the distance between the top of the cleaning nozzle 14 and the upper surface of the rotating platform 11 is less than the distance between the top of the second dummy wafer adsorption device 13 and the upper surface of the rotating platform 11.

[0045] In this embodiment, the wafer cleaning platform 10 can clean the back side of a dummy wafer when there are particle defects on the back side of the wafer to be cleaned (e.g., a chuck temperature control wafer, etc.). This can reduce contamination of the wafer chuck (i.e., the worktable) in the main unit of the semiconductor equipment, improve product yield, reduce the amount of dummy wafers used, improve production efficiency, reduce wear on the wafer chuck, and extend the service life of the wafer chuck. By setting up a first dummy wafer adsorption device 12 and a second dummy wafer adsorption device 13, different wafer adsorption devices can be used to adsorb dummy wafers during the cleaning process, so as to achieve separate cleaning of the back side and center of the dummy wafer. The distance between the top of the second fake wafer adsorption device 13 and the upper surface of the rotating platform 11 is less than the maximum distance between the top of the first fake wafer adsorption device 12 and the upper surface of the rotating platform 11, and greater than the minimum distance between the top of the first fake wafer adsorption device 12 and the upper surface of the rotating platform 11. This ensures that when the first fake wafer adsorption device 12 rises to its highest position, it can adsorb the center of the back side of the fake wafer, and that when the first fake wafer adsorption device 12 falls to its lowest position, the second fake wafer adsorption device 13 can adsorb the edge of the back side of the fake wafer. The distance between the top of the cleaning nozzle 14 and the upper surface of the rotating platform 11 is less than the distance between the top of the second fake wafer adsorption device 13 and the upper surface of the rotating platform 11. This ensures that the second fake wafer adsorption device 13 adsorbing the fake wafer will not affect the cleaning nozzle 14 cleaning the fake wafer.

[0046] In an optional embodiment, the center of the rotating platform 11 may have a through hole (not shown) extending through the rotating platform 11 along the thickness direction; the first pseudo-wafer adsorption device 12 may include: a first support column 121 and a first adsorption disk 122; the first support column 121 is located in the through hole and extends through the rotating platform 11 through the through hole; the first support column 121 is connected to a first driving device (not shown) and moves up and down under the drive of the first driving device; the first adsorption disk 122 is located on top of the first support column 121 and is located above the rotating platform 11; the second pseudo-wafer adsorption device 13 may include: a second support column 131 and a second adsorption disk 132; the bottom of the second support column 131 is connected to the upper surface of the rotating platform 11; the second adsorption disk 132 is disposed on top of the second support column 131.

[0047] In another optional embodiment, the first pseudo-wafer adsorption device 12 may include: a first support column 121 and a first adsorption disk 122; the first support column 121 is directly disposed on the upper surface of the rotating platform 11, that is, the bottom of the first support column 121 is connected to the upper surface of the rotating platform 11; the first support column 121 is connected to a first driving device (not shown) and moves up and down under the drive of the first driving device; the first adsorption disk 122 is disposed on the top of the first support column 121 and is located above the rotating platform 11; the second pseudo-wafer adsorption device 13 may include: a second support column 131 and a second adsorption disk 132; the bottom of the second support column 131 is connected to the upper surface of the rotating platform 11; the second adsorption disk 132 is disposed on the top of the second support column 131.

[0048] In one embodiment, the first adsorption plate 122 may include, but is not limited to, a vacuum adsorption plate or an electrostatic adsorption plate; the second adsorption plate 132 may include a vacuum adsorption plate or an electrostatic adsorption plate.

[0049] In one embodiment, the number of second pseudo-wafer adsorption devices 13 can be multiple, and the multiple second pseudo-wafer adsorption devices 13 are arranged at circumferential intervals along the rotating platform 11. Figure 1 The example only uses three second pseudo-wafer adsorption devices 13. In actual examples, the number of second pseudo-wafer adsorption devices 13 is not limited to this. By setting multiple second pseudo-wafer adsorption devices 13 and arranging them at intervals along the circumference of the rotating platform 11, stable adsorption of pseudo-wafers can be achieved, preventing pseudo-wafers from tilting during the cleaning process.

[0050] In one embodiment, the cleaning nozzle 14 may be located between the first pseudo wafer adsorption device 12 and the second pseudo wafer adsorption device 13.

[0051] In one embodiment, the nozzle of the cleaning nozzle 14 can be oriented at a preset angle α with the upper surface of the rotating platform 11. The preset angle α can be greater than 0° and less than or equal to 90°. By setting the preset angle α, the cleaning nozzle 14 can clean the back side of the dummy wafer at the preset angle α, thereby improving the cleaning effect.

[0052] In one embodiment, such as Figure 2 As shown, the wafer cleaning platform 10 may further include an annular slide rail 15, which is disposed on the upper surface of the rotating platform 11 and between the first dummy wafer adsorption device 12 and the second dummy wafer adsorption device 13. A cleaning nozzle 14 is disposed on the annular slide rail 15 and is connected to a second driving device (not shown), sliding along the annular slide rail 15 under the drive of the second driving device. By setting the annular slide rail 15, the position of the cleaning nozzle 14 can be adjusted to clean different positions of the dummy wafer.

[0053] In an optional embodiment, the wafer cleaning platform 10 may further include a telescopic rod 16, the bottom of which is connected to an annular slide rail 15. The telescopic rod 16 is connected to a third drive device (not shown) and moves telescopically under the drive of the third drive device. The cleaning nozzle 14 is located at the top of the telescopic rod 16. By setting the telescopic rod 16, the height of the cleaning nozzle 14 can be adjusted to achieve the best cleaning effect on different positions of the dummy wafer.

[0054] The present invention also provides a semiconductor device, such as Figure 3 As shown, the semiconductor equipment includes: a main unit (not shown), a dummy wafer cleaning platform 10 as described in any of the above embodiments, a storage chamber 30, a transfer device 70, and a control device 80; wherein, the dummy wafer cleaning platform 10 and the storage chamber 30 are located on the side of the main unit; the storage chamber 30 is used to store dummy wafers; the transfer device 70 is connected to the control device and is used to transfer dummy wafers between the main unit, the storage chamber 30, and the dummy wafer cleaning platform 10; the control device 80 is connected to the main unit and the transfer device 70 and is used to control the transfer device 70 to transfer the dummy wafers to the storage chamber 30 or the dummy wafer cleaning platform 10 when the main unit completes the processing of the dummy wafers.

[0055] In one embodiment, the main unit may include: a loading port 40, a process chamber 50, and a transfer chamber 20, etc. The dummy wafer cleaning platform 10, storage chamber 30, loading port 40, and process chamber 50 are distributed around the periphery of the transfer chamber 20 along the circumference of the transfer chamber 20. The loading port 40 is used to load a wafer pod (FOUP) (not shown), which contains a process wafer that needs to be processed. The process chamber 50 is provided with a wafer chuck, which is used to adsorb dummy wafers or process wafers during the process processing. The process chamber 50 is provided with a process system (not shown), which is used to process dummy wafers and process wafers.

[0056] In one embodiment, the semiconductor device can be any device that requires warm-up before resuming processing after being idle for a preset time. Specifically, the process chamber 50 may include an exposure chamber, and the process system may include an exposure system. Of course, in other examples, the process chamber 50 may also include an etching chamber, and the process system may also include an etching system. When the process chamber 50 is an exposure chamber, it may include two wafer chucks: a first wafer chuck and a second wafer chuck. When two dummy wafers need to be warmed up, the warm-up process is as follows: the first dummy wafer is transferred to the first wafer chuck for a first exposure; the wafer after the first exposure is transferred to the second wafer chuck for a second exposure; and the exposed first dummy wafer is then removed from the process chamber 50. The second dummy wafer is transferred to the first wafer chuck for a first exposure; the wafer after the first exposure is transferred to the second wafer chuck for a second exposure; and the exposed second dummy wafer is then removed from the process chamber 50. The process wafer is only transferred to the process chamber 50 for exposure after the warm-up is complete.

[0057] In one embodiment, the pseudo wafer can be a bare wafer that has undergone surface treatment to make its surface hydrophobic. Specifically, the pseudo wafer can include a chuck temperature control wafer.

[0058] In one embodiment, the path for the transfer device to transfer the dummy wafer may include from the storage chamber 30 to the main unit, from the main unit to the storage chamber 30, from the main unit to the storage chamber 30 and then to the dummy wafer cleaning platform 10, or from the main unit to the dummy wafer cleaning platform 10 and then to the storage chamber 30.

[0059] In an optional embodiment, the main unit further includes a detection device 60, which is used to detect whether there are particle defects on the back side of the fake wafer before the main unit processes the fake wafer, and when particle defects are detected on the back side of the fake wafer, to detect whether there are the same number of similar particle defects on the back side of the process wafer that has completed the current preset main process.

[0060] In one embodiment, the detection device 60 determines whether there are particle defects on the back side of the fake wafer and the back side of the process wafer by detecting the height difference between a certain area or the entire back side of the fake wafer and the process wafer.

[0061] In one embodiment, a specific method for determining whether there are particle defects on the back side of the process wafer that are the same as those on the back side of the fake wafer is as follows: determine whether the position and size of the particle defects on the back side of the process wafer are the same as those on the back side of the fake wafer. If the position and size are the same, then it is determined that there are particle defects on the back side of the process wafer that are the same as those on the back side of the fake wafer.

[0062] In an optional embodiment, the semiconductor device further includes an alarm device 90 connected to the detection device 60. The alarm device 90 is used to issue an alarm when a defect of the same type as that before cleaning is detected on the back side of the cleaned dummy wafer. Specifically, the alarm device 90 detects the dummy wafer again when it is needed and issues an alarm when a defect of the same type as that before cleaning is detected on the back side of the dummy wafer. More specifically, the alarm device 90 may include an audible alarm or a visual alarm, etc.

[0063] Taking the semiconductor device of this embodiment as an example of an exposure device, one working principle of the semiconductor device in this embodiment is as follows: When the semiconductor device is idle for more than a preset time and then used again, the conveying device 70 picks up the dummy wafer from the storage chamber 30 and uses the detection device 60 to detect whether there are particle defects on the back side of the dummy wafer; the conveying device 70 conveys the detected dummy wafer to the process chamber 50 for exposure, so that the exposure conditions in the process chamber 50 meet the exposure conditions required for the process wafer (usually two dummy wafers are exposed). The conveying device 70 transports the exposed dummy wafer back to the storage chamber 30; the conveying device 70 sequentially picks up the process wafers in the wafer cassette and places them into the process chamber 50 for exposure; if the aforementioned steps detect particle defects on the back side of the dummy wafer, after all the process wafers in that batch (lot) in the wafer cassette have been exposed, the conveying device picks up the exposed process wafers and places them into the detection device 60 for inspection, determining whether the back side of the exposed process wafers has the same number of the same type of particle defects as the back side of the dummy wafer; if the back side of the process wafer has the same number of particle defects as the back side of the dummy wafer... If the back side of the process wafer has the same number of similar particle defects as the back side of the fake wafer (and the number of particle defects is the same as the number of particle defects on the back side of the fake wafer), then the fake wafer can continue to be used. If the back side of the process wafer does not have the same number of similar particle defects as the back side of the fake wafer (or the back side of the process wafer has the same particle defects as the back side of the fake wafer, but the number of the same particle defects is different), then the conveying device 70 picks up the fake wafer and places it on the wafer cleaning platform 10 for back-side cleaning, and then conveys the cleaned fake wafer back to the storage chamber 30. When the semiconductor equipment needs to be used again after being idle for more than a preset time, the conveying device 70 picks up the cleaned fake wafer and conveys it to the detection device 60 for back-side inspection. If the detection device 60 does not detect that the back side of the fake wafer has the same type of particle defects as before cleaning, then the fake wafer can continue to be used. If the detection device 60 detects that the back side of the fake wafer has the same type of particle defects as before cleaning, then the alarm device 90 alarms to prompt the replacement of the fake wafer.

[0064] Taking the semiconductor device of this embodiment as an exposure device as an example, another working principle of the semiconductor device in this embodiment is as follows: when the semiconductor device is idle for more than a preset time and then used again, the conveying device 70 picks up the dummy wafer from the storage chamber 30 and uses the detection device 60 to detect whether there are particle defects on the back side of the dummy wafer; the conveying device 70 conveys the detected dummy wafer to the process chamber 50 for exposure, so that the exposure conditions in the process chamber 50 meet the exposure conditions required for the process wafer (usually two dummy wafers are exposed); the conveying device 70 The exposed dummy wafer is transferred to the dummy wafer cleaning platform 10; the conveying device 70 sequentially picks up the process wafers in the wafer cassette and places them into the process chamber 50 for exposure; if particle defects are detected on the back side of the dummy wafer in the aforementioned steps, after all the process wafers in that batch (lot) in the wafer cassette have been exposed, the conveying device picks up the exposed process wafers and places them into the detection device 60 for inspection, and determines whether there are the same number of the same type of particle defects on the back side of the exposed process wafer as on the back side of the dummy wafer; if there are the same number of the same type of particles on the back side of the process wafer as on the back side of the dummy wafer... If the back side of the process wafer has the same number of particle defects as the back side of the fake wafer, and the number of particle defects is the same as the number of particle defects on the back side of the fake wafer, then the fake wafer can continue to be used, and the conveying device 70 directly conveys the fake wafer from the fake wafer cleaning platform 10 back to the storage chamber 30; if the back side of the process wafer does not have the same number of the same type of particle defects as the back side of the fake wafer (the back side of the process wafer does not have the same particle defects as the back side of the fake wafer, or the back side of the process wafer has the same particle defects as the back side of the fake wafer, but the number of the same particle defects is not...), then the fake wafer can continue to be used, and the conveying device 70 directly conveys the fake wafer from the fake wafer cleaning platform 10 back to the storage chamber 30. If the wafer cleaning platform 10 performs back-side cleaning on the dummy wafer and transmits the cleaned dummy wafer back to the storage chamber 30, when the semiconductor equipment needs to be used again after being idle for more than a preset time, the conveying device 70 picks up the cleaned dummy wafer and transmits it to the detection device 60 for back-side inspection. If the detection device 60 does not detect that there are particle defects of the same type as before cleaning on the back of the dummy wafer, the dummy wafer can continue to be used. If the detection device 60 detects that there are particle defects of the same type as before cleaning on the back of the dummy wafer, the alarm device 90 alarms to prompt the replacement of the dummy wafer.

[0065] The present invention also provides a semiconductor process method, in one optional embodiment, such as Figure 4 As shown, the semiconductor process includes:

[0066] S11: Inspect the back side of the fake wafer and determine whether there are particle defects on the back side of the fake wafer;

[0067] S12: Process the pseudo-wafer to make the process environment meet the process conditions required for the current preset master process processing of the process wafer.

[0068] S13: Perform process processing on the wafer;

[0069] S14: If there are particle defects on the back side of the fake wafer, inspect the back side of the processed wafer and determine whether there are the same number of the same type of particle defects on the back side of the processed wafer as on the back side of the fake wafer.

[0070] S15: If the back side of the process wafer does not have the same number of similar particle defects as the back side of the fake wafer, clean the back side of the fake wafer.

[0071] It should be noted that the semiconductor process method in this embodiment is performed only if the semiconductor equipment used to perform the semiconductor process method in this embodiment has been idle for more than a preset time, and a warm-up process is required before the process wafer is processed by the current preset main process.

[0072] In one embodiment, in step S11, the presence of particle defects on the back side of the fake wafer can be determined by the height difference of a certain area or the entire area on the back side of the fake wafer.

[0073] In one embodiment, the pseudo wafer can be a bare wafer that has undergone surface treatment to make its surface hydrophobic. Specifically, the pseudo wafer can include a chuck temperature control wafer.

[0074] In one embodiment, the process described in steps S12 and S13 may include, but is not limited to, exposure or etching; more specifically, the current preset master process described in step S12 is the exposure process of a batch of process wafers.

[0075] In one embodiment, in step S13, a batch (lot) of process wafers are processed sequentially; in step S14, if there are particle defects on the back side of the wafer, the back side of the processed process wafers is inspected after all the process wafers in the batch have been processed.

[0076] In one embodiment, step S14 can determine whether there are particle defects on the back side of the processed wafer by detecting the height difference of a certain area or the entire area on the back side of the processed wafer.

[0077] In one embodiment, the specific method for determining whether there are particle defects on the back side of the process wafer that are the same as those on the back side of the fake wafer in step S14 is to determine whether the position and size of the particle defects on the back side of the process wafer are the same as those on the back side of the fake wafer. If the position and size are the same, it is determined that there are particle defects on the back side of the process wafer that are the same as those on the back side of the fake wafer.

[0078] In one embodiment, in step S15, the back side of the dummy wafer can be cleaned using a wafer cleaning platform 10 as described in the example above.

[0079] In one embodiment, the statement in step S15 that "the back side of the process wafer does not have the same number of similar particle defects as the back side of the fake wafer" includes the following two cases: First, the back side of the process wafer does not have the same particle defects as the back side of the fake wafer; Second, the back side of the process wafer has particle defects that are the same as the particle defects on the back side of the fake wafer, but the number of the same particle defects is less than the number of particle defects on the back side of the fake wafer.

[0080] In another alternative embodiment, such as Figure 5 As shown, in Figure 4 The semiconductor process method shown includes the following steps after step S15: S16: inspecting the back side of the fake wafer and determining whether there are particle defects of the same type as before cleaning on the back side of the fake wafer; S17: if there are particle defects of the same type, an alarm is triggered.

[0081] In one embodiment, step S16 involves detecting the back side of the dummy wafer when it is needed again (for example, when the semiconductor equipment is idle for more than a preset time after executing the current preset master process of a batch of wafers and the process wafers need to be processed again).

[0082] In one example, step S17 can use any alarm method, such as audible alarm or optical alarm, to remind staff to replace the fake wafer.

[0083] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0084] The above embodiments merely illustrate several implementation methods of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A pseudo-wafer cleaning platform, characterized in that, include: Rotating platform; The first pseudo-wafer adsorption device is located at the center of the rotating platform and can move up and down in a direction perpendicular to the upper surface of the rotating platform. The second pseudo-wafer adsorption device is disposed on the upper surface of the rotating platform and located outside the first pseudo-wafer adsorption device; the distance between the top of the second pseudo-wafer adsorption device and the upper surface of the rotating platform is less than the maximum distance between the top of the first pseudo-wafer adsorption device and the upper surface of the rotating platform, and greater than the minimum distance between the top of the first pseudo-wafer adsorption device and the upper surface of the rotating platform. A cleaning nozzle is disposed on the upper surface of the rotating platform, and the distance between the top of the cleaning nozzle and the upper surface of the rotating platform is less than the distance between the top of the second pseudo-wafer adsorption device and the upper surface of the rotating platform.

2. The pseudo-wafer cleaning platform according to claim 1, characterized in that, The rotating platform has a through hole at its center that extends through the platform along its thickness direction; The first pseudo-wafer adsorption device includes: a first support column and a first adsorption disk; the first support column is located in the through hole and passes through the rotating platform through the through hole; the first support column is connected to a first driving device and moves up and down under the drive of the first driving device; the first adsorption disk is located on the top of the first support column and above the rotating platform. The second pseudo-wafer adsorption device includes: a second support column and a second adsorption disk; the bottom of the second support column is connected to the upper surface of the rotating platform; the second adsorption disk is disposed on the top of the second support column.

3. The pseudo-wafer cleaning platform according to claim 1, characterized in that, The first pseudo-wafer adsorption device includes: a first support column and a first adsorption disk; the bottom of the first support column is connected to the upper surface of the rotating platform; the first support column is connected to a first driving device and moves up and down under the drive of the first driving device; the first adsorption disk is disposed on the top of the first support column and is located above the rotating platform. The second pseudo-wafer adsorption device includes: a second support column and a second adsorption disk; the bottom of the second support column is connected to the upper surface of the rotating platform; the second adsorption disk is disposed on the top of the second support column.

4. A semiconductor device, characterized in that, include: The main unit, the pseudo-wafer cleaning platform as described in any one of claims 1 to 3, the storage chamber, the conveying device, and the control device; wherein, The pseudo-wafer cleaning platform and the storage chamber are located on the side of the main unit; The storage chamber is used to store dummy wafers; The conveying device is connected to the control device and is used to convey the fake wafer between the main unit, the storage chamber and the fake wafer cleaning platform. The control device is connected to the main unit and the conveying device, and is used to control the conveying device to convey the fake wafer to the storage chamber or the fake wafer cleaning platform when the main unit completes the process of processing the fake wafer. The main unit includes a detection device, which is used to detect whether there are particle defects on the back side of the pseudo wafer before the main unit performs the process on the pseudo wafer, and when the particle defects are detected on the back side of the pseudo wafer, to detect whether there are the same number of similar particle defects on the back side of the process wafer that has completed the current preset main process.

5. The semiconductor device according to claim 4, characterized in that, The semiconductor device also includes an alarm device connected to the detection device, which is used to issue an alarm when the back side of the cleaned dummy wafer is found to have the same type of defect as before cleaning.

6. The semiconductor device according to any one of claims 4 to 5, characterized in that, The pseudo-wafer is a chuck temperature control wafer.

7. A semiconductor manufacturing process, characterized in that, include: The back side of the fake wafer is inspected to determine whether there are particle defects on the back side of the fake wafer; The pseudo wafer is processed to bring the process environment to the level required for the current preset main process processing of the process wafer. The process wafer is subjected to the current preset master process; If there are particle defects on the back side of the fake wafer, the back side of the process wafer after the current preset main process is inspected, and it is determined whether there are the same number of the same type of particle defects on the back side of the process wafer as on the back side of the fake wafer. If the back side of the process wafer does not have the same number of similar particle defects as the back side of the fake wafer, the back side of the fake wafer is cleaned.

8. The semiconductor process method according to claim 7, characterized in that, The current preset master process is the exposure process of a batch of process wafers.

9. The semiconductor process method according to claim 7, characterized in that, After cleaning the back side of the dummy wafer, the process further includes: The back side of the fake wafer is inspected to determine whether there are particle defects of the same type as before cleaning. If particle defects of the same type are found, an alarm is triggered.

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