Display device and method of manufacturing the same

Abstract

A display device and a manufacturing method thereof are provided. The display device includes a base substrate including an open area through which light is transmitted, an open peripheral area surrounding the open area and serving as a non-display area, and a display area surrounding the open peripheral area and configured with a plurality of pixels and displaying an image; an insulating layer configured on the base substrate in the open peripheral area and the display area except for the open area; a via insulating layer configured on the insulating layer in the open peripheral area and the display area except for the open area; and a thin film encapsulation layer including a first inorganic film and a second inorganic film configured on the base substrate configured with the via insulating layer in the open peripheral area and the display area except for the open area.

Description

Technical Field

[0001] The present invention relates to a display device and a method for manufacturing the display device, and more specifically, to a display device including an opening region and a method for manufacturing the display device. Background Technology

[0002] In recent years, with technological advancements, smaller, lighter, and higher-performance display products are being produced. Currently, cathode ray tubes (CRTs) are widely used in display devices due to their advantages in performance and price. However, recently, display devices that overcome the shortcomings of CRTs in terms of miniaturization and portability, and offer advantages such as small size, light weight, and low power consumption (e.g., plasma displays, liquid crystal displays, and organic light-emitting diode displays) have attracted considerable attention.

[0003] To expand the display area of ​​the display device, borderless display devices and display devices including notch-shaped displays have been developed. More recently, display devices with holes in the active area that house cameras and other devices have also been developed. Therefore, to improve the display quality of the display device, it is necessary to consider the presence or absence of these holes when designing the panel. Summary of the Invention

[0004] In this regard, the technical problem of the present invention focuses on the points mentioned above, and the object of the present invention is to provide a display device including an opening area located in the display area that reduces manufacturing costs and improves quality.

[0005] Another object of the present invention is to provide a method for manufacturing the display device.

[0006] An embodiment of the display device for achieving the objectives of the present invention includes: a substrate including an opening region through which light passes, an opening periphery region surrounding the opening region and serving as a non-display region, and a display region surrounding the opening periphery region and having a plurality of pixels disposed thereon and displaying an image; an insulating layer disposed on the substrate in the opening periphery region and the display region, excluding the opening region; a through-hole insulating layer disposed on the insulating layer in the opening periphery region and the display region, excluding the opening region; and a thin-film encapsulation layer including a first inorganic film and a second inorganic film disposed on the substrate in which the through-hole insulating layer is disposed in the opening periphery region and the display region, excluding the opening region.

[0007] In one embodiment of the present invention, the substrate may be a rigid substrate.

[0008] In one embodiment of the present invention, the surface roughness of the substrate in the opening region may be greater than the surface roughness of the substrate in the periphery region of the opening and the display region.

[0009] In one embodiment of the present invention, the display device may further include: a first electrode disposed on the through-hole insulating layer within the display area; a light-emitting layer disposed on the first electrode; and a second electrode disposed on the light-emitting layer.

[0010] In one embodiment of the present invention, a groove surrounding the opening region may be formed in the through-hole insulating layer in the region surrounding the opening.

[0011] In one embodiment of the present invention, the second electrode of the groove disposed in the through-hole insulating layer may have a truncated portion.

[0012] In one embodiment of the present invention, the second electrode may be located away from the opening region.

[0013] In one embodiment of the present invention, the light-emitting layer may include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer disposed between the second electrode and the substrate and collectively formed to correspond to a plurality of pixels. The hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be located away from the opening region.

[0014] In one embodiment of the present invention, the first inorganic film of the thin film encapsulation layer may be in contact with the substrate in the peripheral region of the opening.

[0015] In one embodiment of the present invention, the peripheral region of the opening may include a heat deformation zone formed in the portion adjacent to the opening region. Alternatively, the through-hole insulating layer may be carbonized within the heat deformation zone.

[0016] In one embodiment of the present invention, the peripheral region of the opening may include a thermal deformation zone formed in the portion adjacent to the opening region. Alternatively, in the thermal deformation zone, the height of the through-hole insulating layer may be greater than the height of the through-hole insulating layer in the display area and the peripheral region of the opening.

[0017] In one embodiment of the present invention, the display device may further include: a cover window disposed on the thin-film encapsulation layer; and an optically transparent adhesive film disposed between the thin-film encapsulation layer and the cover window. Alternatively, in the opening region, the substrate and the cover window may be spaced apart from each other.

[0018] In one embodiment of the present invention, an optically transparent adhesive film may be disposed between the substrate and the cover window in the opening area.

[0019] In one embodiment of the present invention, the display device may further include: a cover window disposed on the thin-film encapsulation layer; and an optically transparent resin disposed between the cover window and the thin-film encapsulation layer. Alternatively, the optically transparent resin may be disposed between the substrate and the cover window in the opening region.

[0020] An embodiment of the present invention relates to a method for manufacturing a display device, the display device comprising an opening region through which light passes, an opening periphery region surrounding the opening region and serving as a non-display region, and a display region surrounding the opening periphery region, having a plurality of pixels disposed thereon, and displaying an image. The manufacturing method includes: a step of forming an insulating layer on a substrate; a step of forming a through-hole insulating layer on the insulating layer; a step of sequentially forming a first electrode, a light-emitting layer, and a second electrode on the through-hole insulating layer; a step of forming a thin-film encapsulation layer comprising a first inorganic film and a second inorganic film on the second electrode; and a step of removing each layer on the substrate of the opening region to expose the upper surface of the substrate.

[0021] In one embodiment of the present invention, in the step of exposing the upper surface of the substrate, a laser is used to remove each layer on the substrate in the opening region, thereby making the surface roughness of the substrate in the opening region greater than the surface roughness of the substrate in the opening periphery region and the display region.

[0022] In one embodiment of the present invention, in the step of exposing the upper surface of the substrate, a thermal deformation zone is formed in the portion of the area surrounding the opening that is connected to the opening area by the laser, and the through-hole insulating layer is carbonized in the thermal deformation zone.

[0023] In one embodiment of the present invention, during the step of forming the through-hole insulating layer, a groove surrounding the opening region is formed in the through-hole insulating layer in the region surrounding the opening.

[0024] In one embodiment of the present invention, the manufacturing method may further include, after the step of forming the second electrode, a step of removing each layer on the substrate to expose the upper surface of the substrate for a portion of the opening region and the surrounding region of the opening.

[0025] In one embodiment of the present invention, the manufacturing method may further include the steps of: forming an optically transparent adhesive film or an optically transparent resin on the thin film encapsulation layer; and attaching a cover window to the optically transparent adhesive film or the optically transparent resin.

[0026] (Invention Effects)

[0027] According to various embodiments of the present invention, the display device may include a substrate as a rigid substrate, and an opening region for which an optical module is to be disposed may be formed while the light-emitting layer is sealed using a thin-film encapsulation layer. This provides a display device that reduces manufacturing costs and improves quality. Furthermore, since the structures on each layer of the substrate are removed from the opening region, performance degradation of the optical module due to interference phenomena such as air gaps can be prevented.

[0028] However, the effects of the present invention are not limited to those described, and various extensions can be made without departing from the spirit and scope of the present invention. Attached Figure Description

[0029] Figure 1 This is a plan view of a display device according to an embodiment of the present invention.

[0030] Figure 2 It was cut off Figure 1 A cross-sectional view of the periphery of the opening area HA of the display device.

[0031] Figure 3 yes Figure 2 An enlarged cross-sectional view of the HAZ portion of the thermal deformation zone of the display device.

[0032] Figure 4 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0033] Figure 5 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0034] Figure 6 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0035] Figure 7 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0036] Figure 8 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0037] Figures 9a to 9b It is used for explanation Figure 2 A cross-sectional view of the manufacturing method of the display device.

[0038] Figures 10a to 10c It is used for explanation Figure 4 A cross-sectional view of the manufacturing method of the display device.

[0039] Figure 11 This is a block diagram illustrating an electronic device according to various embodiments of the present invention.

[0040] Figure 12a This indicates that it is achieved by a television set. Figure 11 An example of an electronic device.

[0041] Figure 12b This indicates that it is implemented by a smartphone. Figure 11 An example of an electronic device.

[0042] (Symbol Explanation)

[0043] 100: Substrate; 110: Buffer layer; TFT: Thin film transistor; 120: First insulating layer; 130: Second insulating layer; VIA1: First through-hole insulating layer; VIA2: Second through-hole insulating layer; 180: Light-emitting structure; PDL: Pixel definition film; 190: Thin film encapsulation layer. Detailed Implementation

[0044] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

[0045] Figure 1 This is a plan view of a display device according to an embodiment of the present invention.

[0046] Reference Figure 1 The display device 10 may include a display area DA, an opening periphery area HPA located within the display area DA, and an opening area HA located within the opening periphery area HPA.

[0047] The opening region HA allows light to pass through, therefore an optical module can be configured overlapping the opening region HA (see reference). Figure 2 (400). The periphery area HPA of the opening is a non-display area surrounding the opening area HA, which may be configured with signal wiring, etc.

[0048] The display area DA is an area for displaying images and may be configured with multiple pixels (not shown). Each pixel may include a light-emitting structure and a pixel circuit having a thin-film transistor electrically connected to the light-emitting structure. The display area DA may have a rectangular shape with a length longer in the second direction D2 on a plane formed by a first direction D1 and a second direction D2 perpendicular to the first direction D1. The corners of the display area DA may have a chamfered shape.

[0049] Although not shown in the figure, a non-display area, i.e. a peripheral area, where no image is displayed can be formed along the edge of the display device 10.

[0050] Figure 2 It was cut off Figure 1 A cross-sectional view of the periphery of the opening area HA of the display device.

[0051] Reference Figure 1 and Figure 2 The display device 10 may include a substrate 100, a buffer layer 110, an active pattern AG of a thin-film transistor (TFT), a first insulating layer 120, a gate conductive layer, a second insulating layer 130, a first source-drain conductive layer, a first via insulating layer VIA1, a second source-drain conductive layer, a second via insulating layer VIA2, a pixel definition film (PDL), a light-emitting structure 180, and a thin-film encapsulation layer 190. The display device 10 may also include an optical module 400.

[0052] The substrate 100 may be made of a transparent or opaque material. The substrate 100 may be a rigid substrate. For example, the substrate 100 may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz substrate, a sodalime glass substrate, a non-alkali glass substrate, etc.

[0053] The buffer layer 110 can be disposed on the substrate 100 in the opening periphery region HPA and the display region DA, excluding the opening region HA. The buffer layer 110 can prevent the diffusion of metal atoms or impurities from the substrate 100 to the active pattern AG, and can adjust the heat transfer rate during the crystallization process used to form the active pattern AG to obtain a substantially uniform active pattern AG. The buffer layer 110 can be formed using an inorganic insulating material.

[0054] The active pattern AG can be disposed on the buffer layer 110 within the display area DA. The active pattern AG can include amorphous silicon or polycrystalline silicon. As another embodiment, the active pattern AG can include an oxide of at least one substance selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). The active pattern AG can include a drain region and a source region doped with impurities, and a channel region between the drain region and the source region.

[0055] The first insulating layer 120 may be disposed on the buffer layer 110 in the opening periphery region HPA and the display region DA, excluding the opening region HA. The first insulating layer 120 covers the active pattern AG on the buffer layer 110 and may be configured to have substantially the same thickness according to the contour of the active pattern AG. The first insulating layer 120 may be formed from multiple layers. The first insulating layer 120 may be formed using an inorganic insulating material.

[0056] The gate conductive layer may be disposed on the first insulating layer 120. The gate conductive layer may include a gate electrode GE overlapping the active pattern AG of the thin-film transistor TFT and signal wiring (not shown) disposed in the peripheral region HPA of the opening. The gate conductive layer may be formed using metals, alloys, metal nitrides, conductive metal oxides, transparent conductive materials, etc.

[0057] The second insulating layer 130 can be disposed on the first insulating layer 120, where the gate conductive layer is disposed, in the opening peripheral region HPA and the display region DA, excluding the opening region HA. The second insulating layer 130 can cover the gate conductive layer on the first insulating layer 120 and can be configured to have substantially the same thickness along the contour of the gate conductive layer. The second insulating layer 130 can be formed from multiple layers. The second insulating layer 130 can be formed using an inorganic insulating material.

[0058] The first source-drain conductive layer may be disposed on the second insulating layer 130. The first source-drain conductive layer may include a source electrode SE and a drain electrode DE electrically connected to the source region and the drain region of the active pattern AG of the thin-film transistor TFT, respectively, through contact holes formed via the second insulating layer 130 and the first insulating layer 120. The first source-drain conductive layer may also include signal wiring (not shown) disposed in the peripheral region of the opening HPA. The first source-drain conductive layer may be formed using metals, alloys, metal nitrides, conductive metal oxides, transparent conductive materials, etc.

[0059] The first via insulating layer VIA1 can be disposed on the second insulating layer 130, where the first source-drain conductive layer is disposed, in the opening periphery region HPA and the display region DA, excluding the opening region HA. The first via insulating layer VIA1 can be formed as a single layer, but it can also be formed as a multilayer structure including at least two insulating films. The first via insulating layer VIA1 can be formed using organic substances such as photoresist, acrylic resin, polyimide resin, polyamide resin, and siloxane-based resin.

[0060] In the area HPA surrounding the opening, a groove VIAG can be formed in the first through-hole insulating layer VIA1 to surround the opening area HA. ​​As shown, the groove VIAG can penetrate the first through-hole insulating layer VIA1 to expose the second insulating layer 130. Multiple grooves VIAG can be formed.

[0061] The second source-drain conductive layer can be disposed on the first via insulating layer VIA1. The second source-drain conductive layer may include: a contact pad CP disposed within the display area DA; and a pattern SD2P disposed on the groove VIAG of the first via insulating layer VIA1 in the opening periphery region HPA. The contact pad CP can be electrically connected to the drain electrode DE of the thin-film transistor TFT through a contact hole, wherein the contact hole is formed via the first via insulating layer VIA1. The pattern SD2P can be adjacent to the groove VIAG to form an undercut. Thus, a portion of the light-emitting structure 180 described later can form a truncated structure in the groove VIAG. The second source-drain conductive layer may also include signal wiring (not shown) disposed in the opening periphery region HPA. The second source-drain conductive layer can be formed using metals, alloys, metal nitrides, conductive metal oxides, transparent conductive materials, etc.

[0062] The second via insulating layer VIA2 can be disposed on the first via insulating layer VIA1, where the second source-drain conductive layer is disposed, in the opening periphery region HPA and the display region DA, excluding the opening region HA. The second via insulating layer VIA2 can be formed as a single layer, or as a multilayer structure including at least two insulating films. The second via insulating layer VIA2 can be formed using organic substances such as photoresist, acrylic resin, polyimide resin, polyamide resin, and siloxane-based resin.

[0063] The light-emitting structure 180 may include a first electrode 181, a light-emitting layer 182, and a second electrode 183.

[0064] The first electrode 181 can be disposed on the second via insulating layer VIA2. The first electrode 181 can be electrically connected to the thin-film transistor TFT. Depending on the light emission mode of the display device 10, the first electrode 181 can be formed using a reflective or transparent material. For example, the first electrode 181 may include aluminum, aluminum alloys, aluminum nitrides, silver, silver alloys, tungsten, tungsten nitrides, copper, copper alloys, nickel, chromium, chromium nitrides, molybdenum, molybdenum alloys, titanium, titanium nitrides, platinum, tantalum, tantalum nitrides, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. These materials can be used alone or in combination with each other. In various exemplary embodiments, the first electrode 181 can be formed from a single-layer structure or a multi-layer structure including a metal film, an alloy film, a metal nitride film, a conductive metal oxide film, and / or a transparent conductive material film.

[0065] The pixel definition film (PDL) can be disposed on the second via insulating layer (VIA2) where the first electrode 181 is disposed. The PDL can be formed using organic materials or the like. For example, the PDL can be formed using photoresist, polyacrylic resin, polyimide resin, acrylic resin, silicon compound, etc. According to various exemplary embodiments, the PDL can be etched to form an opening that partially exposes the first electrode 181.

[0066] In the periphery region HPA of the opening, one or more of the first through-hole insulating layer VIA1, the second through-hole insulating layer VIA2, and the pixel defining film PDL may be formed with a dammed diaphragm (DAM). The dammed diaphragm (DAM) can prevent the organic film 192 of the thin film encapsulation layer 190, described later, from overflowing in the direction of the opening region HA.

[0067] The light-emitting layer 182 can be disposed on the first electrode 181 exposed through the opening of the pixel definition film PDL. Furthermore, the light-emitting layer 182 can extend toward the sidewall of the opening of the pixel definition film PDL. In various exemplary embodiments, the light-emitting layer 182 can have a multilayer structure including an organic light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. In other embodiments, in addition to the organic light-emitting layer, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer can be formed together to correspond to multiple pixels. The organic light-emitting layer of the light-emitting layer 182 can be formed using a light-emitting material capable of generating light of different colors, such as red, green, and blue, according to each pixel of the display device 10. According to other exemplary embodiments, the organic light-emitting layer 182 can also have a structure that stacks multiple light-emitting materials capable of emitting white light by realizing different colors of light, such as red, green, and blue. In this case, the various light-emitting structures can be formed together to correspond to multiple pixels, and each pixel can be divided by a color filter layer.

[0068] The second electrode 183 can be disposed on the pixel definition film (PDL) and the light-emitting layer 182. Depending on the light-emitting mode of the display device 10, the second electrode 183 may include a transparent or reflective material. For example, the second electrode 183 may include aluminum, aluminum alloys, aluminum nitrides, silver, silver alloys, tungsten, tungsten nitrides, copper, copper alloys, nickel, chromium, chromium nitrides, molybdenum, molybdenum alloys, titanium, titanium nitrides, platinum, tantalum, tantalum nitrides, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. These materials can be used individually or in combination. In various exemplary embodiments, the second electrode 183 may also be formed from a single-layer or multi-layer structure including a metal film, an alloy film, a metal nitride film, a conductive metal oxide film, and / or a transparent conductive material film.

[0069] The thin-film encapsulation layer 190 can be disposed on the second electrode 183. The thin-film encapsulation layer 190 can prevent the penetration of external moisture and oxygen. The thin-film encapsulation layer 190 can have at least one organic film and at least one inorganic film. At least one organic film and at least one inorganic film can be alternately stacked on top of each other. For example, the thin-film encapsulation layer 190 may include a first inorganic film 191, a second inorganic film 193, and an organic film 192 between the first inorganic film 191 and the second inorganic film 193, but is not limited thereto. The thin-film encapsulation layer 190 is not formed in the opening region HA, thereby exposing the upper surface of the substrate 100 in the opening region HA.

[0070] In the opening region HA, the roughness of the upper surface of the substrate 100 can be greater than the roughness of the surface of the substrate 100 in the opening peripheral region HPA and the display region DA. This is because, in the opening region HA, during the removal of the on-layer structure disposed on the substrate 100 using a laser or the like, the upper surface of the substrate 100 is slightly damaged. At this time, for the amount of laser processing in the opening region HA, the outer contour portion (the portion adjacent to the opening peripheral region) of the opening region HA is greater than the central portion of the opening region HA. Therefore, the roughness of the outer contour portion of the opening region HA can be greater than the roughness of the central portion of the opening region HA.

[0071] The optical module 400 can be configured to overlap the opening region HA below the substrate 100 (i.e., in the third direction D3). For example, the optical module 400 may include a camera module capable of capturing (or recognizing) images of objects, a face recognition sensor module for sensing the user's face, a pupil recognition sensor module for sensing the user's pupils, an acceleration sensor module and a geomagnetic sensor module for determining the movement of the display device 10, a proximity sensor module and an infrared sensor module for sensing whether the front of the display device 10 is close or not, and an illuminance sensor module for measuring the brightness level when placed in a pocket or bag, etc.

[0072] Figure 3 yes Figure 2 An enlarged cross-sectional view of the HAZ portion of the thermal deformation zone of the display device.

[0073] Reference Figure 2 and Figure 3 The opening periphery region HPA may include a heat deformation zone HAZ formed in the portion adjacent to the opening region HA. The heat deformation zone HAZ is the area where adjacent portions of the on-layer structure are affected by heat during the removal of the on-layer structure disposed on the substrate 100 by means of a laser or the like in the opening region HA.

[0074] In the heat deformation zone HAZ, a portion of the first through-hole insulating layer VIA1 can be carbonized. In the heat deformation zone HAZ (the area marked with a slash in the figure), the height h2 of the first through-hole insulating layer VIA1 can be greater than the height h1 of the first through-hole insulating layer VIA1 in the display area DA and the opening periphery area HPA. This is because, in the heat deformation zone HAZ, the first through-hole insulating layer VIA1, which comprises an organic insulating material that is easily deformed by heat, can undergo heat deformation and be carbonized or lifted.

[0075] Figure 4 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0076] Reference Figure 1 and Figure 4 The display device 10 may include a substrate 100, a buffer layer 110, an active pattern AG of a thin-film transistor (TFT), a first insulating layer 120, a gate conductive layer, a second insulating layer 130, a source-drain conductive layer, a via insulating layer VIA, a pixel definition film (PDL), a light-emitting structure 180, and a thin-film encapsulation layer 190. The display device 10 may also include an optical module 400.

[0077] The substrate 100 may be made of a transparent or opaque material. The substrate 100 may be a rigid substrate.

[0078] The buffer layer 110 may be disposed on the substrate 100 in a portion of the opening periphery region HPA, excluding the opening region HA, and in the display region DA. The buffer layer 110 may be located away from the opening region HA.

[0079] The active pattern AG of the thin-film transistor TFT can be disposed on the buffer layer 110 within the display area DA.

[0080] The first insulating layer 120 may be disposed on the buffer layer 110 in a portion of the opening periphery region HPA, excluding the opening region HA, and the display region DA.

[0081] The gate conductive layer may be disposed on the first insulating layer 120. The gate conductive layer may include a gate electrode GE that overlaps with the active pattern AG of the thin-film transistor TFT.

[0082] The second insulating layer 130 may be disposed on the first insulating layer 120 on which the gate conductive layer is disposed, in a portion of the opening peripheral region HPA other than the opening region HA and the display region DA.

[0083] The source-drain conductive layer may be disposed on the second insulating layer 130. The source-drain conductive layer may include a source electrode SE and a drain electrode DE that are electrically connected to the source region and drain region of the active pattern AG of the thin-film transistor TFT respectively through contact holes, wherein the contact holes are formed via the second insulating layer 130 and the first insulating layer 120.

[0084] The via insulating layer VIA can be disposed on the second insulating layer 130 on which the source-drain conductive layer is disposed, in a portion of the opening peripheral region HPA other than the opening region HA and the display region DA.

[0085] The light-emitting structure 180 may include a first electrode 181, a light-emitting layer 182, and a second electrode 183.

[0086] The first electrode 181 may be disposed on the through-hole insulating layer VIA.

[0087] The pixel definition film (PDL) can be disposed on the through-hole insulating layer (VIA) on which the first electrode 181 is disposed.

[0088] In the area surrounding the opening (HPA), the pixel definition film (PDL) can form a dammed DAM.

[0089] The light-emitting layer 182 can be disposed on the first electrode 181 exposed through the opening of the pixel definition film PDL.

[0090] The second electrode 183 can be disposed on the pixel definition film PDL and the light-emitting layer 182.

[0091] The thin-film encapsulation layer 190 may be disposed on the second electrode 183. The thin-film encapsulation layer 190 may comprise at least one organic film and at least one inorganic film. The at least one organic film and at least one inorganic film may be alternately stacked on top of each other. For example, the thin-film encapsulation layer 190 may include a first inorganic film 191, a second inorganic film 193, and an organic film 192 between the first inorganic film 191 and the second inorganic film 193, but is not limited thereto.

[0092] The first inorganic film 191 of the thin film encapsulation layer 190 can be in contact with the substrate 100 in the periphery region of the opening.

[0093] At this time, the light-emitting layer 182 may include a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer disposed between the second electrode 183 and the substrate 100 and together formed into a hole injection layer, a hole transport layer and an electron injection layer corresponding to a plurality of pixels. However, the light-emitting layer 182 and the second electrode 183 are cut off from the opening periphery region HPA away from the opening region HA, so that the external influence of the opening region HA on the organic matter of the light-emitting layer 182 can be prevented.

[0094] Furthermore, for the heat deformation zone HAZ, which may cause heat-induced effects on adjacent on-layer structures during the removal of on-layer structures disposed on the substrate 100 by means of laser in the opening region HA, the effects of heat deformation can be minimized since only the first inorganic film 191 and the second inorganic film 193 of the thin film encapsulation layer 190 are disposed there.

[0095] Figure 5 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0096] Reference Figure 5 Apart from the display device 10 also including an optically transparent adhesive film (OCA) and a cover window (WD), the rest are substantially the same as... Figure 2 The display devices are the same. Therefore, repeated descriptions are omitted.

[0097] The display device 10 may further include a cover window WD disposed on the thin film encapsulation layer 190 and an optically clear adhesive film (OCA) disposed between the thin film encapsulation layer 190 and the cover window WD.

[0098] The optically transparent adhesive film (OCA) may include an adhesive material such as a light-transmitting resin and a light-transmitting film inserted therein. Specifically, the light-transmitting resin may be a photocurable resin. The photocurable resin may be a substance that exerts adhesive force by polymerizing a photocurable resin composed of monomers, oligomers, etc., into a polymer and then curing it upon irradiation with light of a specific wavelength. In an exemplary embodiment, the photocurable resin may be a substance cured by irradiation with ultraviolet (UV) light, but is not limited thereto. The photocurable resin may include acrylic compounds, (meth)acrylic compounds, etc. Furthermore, the photocurable resin may also include a photoinitiator that generates free radicals or ions upon stimulation by light such as ultraviolet light. Examples of photoinitiators include α-hydroxy ketones, mono- or diacylphosphine oxides, benzophenone, thioxanone, ketone sulfones, benzyl ketal, phenylacetal esters, borates, dicenecaecinones, and oxime ester photoinitiators, but are not limited thereto.

[0099] In the opening region HA, the substrate 100 and the cover window WD can be far apart from each other. The distance from the upper surface of the substrate 100 to the cover window WD is generally sufficiently greater than the distance between the substrate 100 and the encapsulation substrate, so that interference caused by the air gap between the substrate 100 and the cover window WD can be reduced in the opening region HA.

[0100] Figure 6 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0101] Reference Figure 6 Except that the display device 10 includes an optically clear resin (OCR) instead of an optically clear adhesive film, it is substantially the same as... Figure 5 The display devices are the same. Therefore, repeated descriptions are omitted.

[0102] The display device 10 may further include a cover window WD disposed on the thin film encapsulation layer 190 and an optically transparent resin OCR disposed between the cover window WD and the thin film encapsulation layer 190. The optically transparent resin OCR may be disposed between the substrate 100 and the cover window WD in the opening region HA.

[0103] Therefore, there is no air gap between the substrate 100 and the cover window WD in the opening area HA, thus reducing the interference caused by the air gap.

[0104] The optically transparent resin OCR may include adhesive materials such as light-transmitting resin. Specifically, the light-transmitting resin may be a photocurable resin. The photocurable resin may be a substance that exhibits adhesive force by polymerizing a photocurable resin composed of monomers, oligomers, etc., into a polymer and then curing it upon irradiation with light of a specific wavelength. In an exemplary embodiment, the photocurable resin may be a substance cured by irradiation with ultraviolet (UV) light, but is not limited thereto. The photocurable resin may include acrylic compounds, (meth)acrylic compounds, etc. Furthermore, the photocurable resin may also include a photoinitiator that generates free radicals or ions upon stimulation by light such as ultraviolet light. Examples of photoinitiators include α-hydroxy ketones, mono- or diacylphosphine oxides, benzophenone, thioxanone, ketone sulfones, benzyl ketal, phenylacetal esters, borates, dicthene and oxime ester photoinitiators, etc., but are not limited thereto.

[0105] Figure 7 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0106] Reference Figure 7 In addition to the display device 10 also including an optically transparent adhesive film (OCA), it is substantially similar to... Figure 6 The display devices are the same. Therefore, repeated descriptions are omitted.

[0107] The display device 10 may further include a cover window WD disposed on the thin film encapsulation layer 190 and an optically transparent resin OCR and an optically transparent adhesive film OCA disposed between the cover window WD and the thin film encapsulation layer 190.

[0108] The optically transparent resin OCR can fill the space between the substrate 100 and the optically transparent adhesive film OCA in the opening region HA and the surrounding area HPA. Therefore, there is no air gap between the substrate 100 and the cover window WD in the opening region HA, thus reducing interference caused by the air gap.

[0109] Figure 8 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0110] Reference Figure 8 In addition to the display device 10 also including an open optically transparent adhesive film HOCA, it is substantially similar to... Figure 5 The display devices are the same. Therefore, repeated descriptions are omitted.

[0111] The display device 10 may further include a cover window WD disposed on the thin film encapsulation layer 190, an optically transparent adhesive film OCA disposed between the cover window WD and the thin film encapsulation layer 190, and an open optically transparent adhesive film HOCA.

[0112] In the opening region HA, an optically transparent adhesive film HOCA can be disposed between the substrate 100 and the cover window WD. Therefore, there is no air gap between the substrate 100 and the cover window WD in the opening region HA, thus reducing interference caused by the air gap.

[0113] Figures 9a to 9b It is used for explanation Figure 2 A cross-sectional view of the manufacturing method of the display device.

[0114] Reference Figure 9aA buffer layer 110 can be formed on the substrate 100. An active pattern AG of a thin-film transistor (TFT) can be formed on the buffer layer 110. A first insulating layer 120 can be formed on the buffer layer 110 where the active pattern AG is formed. A gate conductive layer including a gate electrode GE can be formed on the first insulating layer 120. A second insulating layer 130 can be formed on the first insulating layer 120 where the gate conductive layer is formed. A first source-drain conductive layer including a source electrode SE and a drain electrode DE can be formed on the second insulating layer 130. A first via insulating layer VIA1 with a groove VIAG formed in the opening peripheral region HPA can be formed on the second insulating layer 130 where the first source-drain conductive layer is formed. A second source-drain conductive layer including a contact pad CP and a pattern SD2P can be formed on the first via insulating layer VIA1 where the second source-drain conductive layer is formed. A second via insulating layer VIA2 can be formed on the first via insulating layer VIA1 where the second source-drain conductive layer is formed. A first electrode 181 of a light-emitting structure 180 can be formed on the second via insulating layer VIA2. A pixel definition film (PDL) can be formed on the second via insulating layer VIA2 on which the first electrode 181 is formed. A light-emitting layer 182 and a second electrode 183 of the light-emitting structure 180 can be formed on the first electrode 181. A thin film encapsulation layer 190, comprising a first inorganic film 191, an organic film 192, and a second inorganic film 193, can be formed on the second electrode 183.

[0115] Reference Figure 9b The on-layer structure disposed on the substrate 100 can be removed in the opening region HA. For example, the on-layer structure disposed on the substrate 100 can be removed by means of laser cutting.

[0116] During the removal of the on-layer structure disposed on the substrate 100 using a laser or the like in the opening region HA, the upper surface of the substrate 100 is slightly damaged. Therefore, the roughness of the upper surface of the substrate 100 in the opening region HA can be greater than the roughness of the surface of the substrate 100 in the opening periphery region HPA and the display region DA. Furthermore, regarding the amount of laser processing in the opening region HA, the outer contour portion (the portion adjacent to the opening periphery region) of the opening region HA is greater than the central portion of the opening region HA. Therefore, the roughness in the outer contour portion of the opening region HA can be greater than that in the central portion.

[0117] At this time, during the process of removing the on-layer structure disposed on the substrate 100 using a laser or the like in the opening region HA, the on-layer structure in adjacent areas may be affected by heat. As a result, a thermal deformation zone HAZ can be formed in the portion in contact with the opening region HA.

[0118] In the heat deformation zone HAZ, the first through-hole insulating layer VIA1, which includes an organic insulating material that is easily deformed by heat, can undergo heat deformation and be carbonized or lifted.

[0119] Then, the display device 10 can be further manufactured by providing a cover window, optical module, etc.

[0120] Figures 10a to 10c It is used for explanation Figure 4 A cross-sectional view of the manufacturing method of the display device.

[0121] Reference Figure 10a A buffer layer 110 can be formed on the substrate 100. An active pattern AG of a thin-film transistor (TFT) can be formed on the buffer layer 110. A first insulating layer 120 can be formed on the buffer layer 110 where the active pattern AG is formed. A gate conductive layer including a gate electrode GE can be formed on the first insulating layer 120. A second insulating layer 130 can be formed on the first insulating layer 120 where the gate conductive layer is formed. A source-drain conductive layer including a source electrode SE and a drain electrode DE can be formed on the second insulating layer 130. A via insulating layer VIA can be formed on the second insulating layer 130 where the source-drain conductive layer is formed. A first electrode 181 of a light-emitting structure 180 can be formed on the via insulating layer VIA. A pixel definition film (PDL) can be formed on the via insulating layer VIA where the first electrode 181 is formed. A light-emitting layer 182 and a second electrode 183 of the light-emitting structure 180 can be formed on the first electrode 181.

[0122] Then, the on-layer structures disposed on the substrate 100 can be removed from the opening region HA and a portion of the opening periphery region HPA adjacent to the opening region HA. For example, the on-layer structures disposed on the substrate 100 can be removed using laser cutting or the like.

[0123] Reference Figure 10b A thin film encapsulation layer 190, comprising a first inorganic film 191, an organic film 192, and a second inorganic film 193, can be formed on the second electrode 183 and the substrate 100.

[0124] At this time, after removing the opening region HA and a portion of the opening periphery region HPA adjacent to the opening region HA by means of laser cutting or the like, the first inorganic film 191 and the second inorganic film 193 can be directly formed on the substrate 100.

[0125] Reference Figure 10c The on-layer structure disposed on the substrate 100 can be removed in the opening region HA. For example, the on-layer structure disposed on the substrate 100 can be removed by means of laser cutting.

[0126] At this time, for the heat deformation zone HAZ that would cause heat-induced effects on adjacent on-layer structures during the removal of on-layer structures disposed on the substrate 100 by laser or the like in the opening region HA, since only the first inorganic film 191 and the second inorganic film 193 of the thin film encapsulation layer 190 are disposed, the effects caused by heat deformation can be minimized.

[0127] Then, the display device 10 can be further manufactured by providing a cover window, optical module, etc.

[0128] Figure 11 This is a block diagram illustrating the electronic devices according to various embodiments of the present invention. Figure 12a This indicates that it is achieved by a television set. Figure 11 An example of an electronic device, Figure 12b It is achieved by smartphones Figure 11 An example of an electronic device.

[0129] Reference Figures 11 to 12b The electronic device 500 may include a processor 510, a storage device 520, a storage device 530, an input / output device 540, a power supply 550, and a display device 560. In this case, the display device 560 may correspond to... Figure 1 The display device 10. The electronic device 500 may also include various ports capable of communicating with graphics cards, sound cards, memory cards, USB devices, etc., or capable of communicating with other systems. In one embodiment, such as... Figure 12a As shown, the electronic device 500 can be implemented using a television set. In other embodiments, such as Figure 12bAs shown, the electronic device 500 can be implemented by a smartphone. However, this is only an example, and the electronic device 500 is not limited to this. For example, the electronic device 500 can also be implemented by a portable phone, videophone, smart pad, smartwatch, tablet PC, vehicle navigation system, computer monitor, laptop computer, head-mounted display (HMD), etc.

[0130] The processor 510 can perform specific calculations or tasks. According to an embodiment, the processor 510 can be a microprocessor, a central processing unit (CPU), an application processor (AP), etc. The processor 510 can be connected to other components via an address bus, a control bus, and a data bus. According to an embodiment, the processor 510 can also be connected to an expansion bus such as a Peripheral Component Interconnect (PCI) bus. The storage device 520 can store data required for the operation of the electronic device 500. For example, the storage device 520 may include non-volatile storage devices such as EPROM (Erasable Programmable Read-Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), flash memory, PRAM (Phase Change Random Access Memory), RRAM (Resistance Random Access Memory), NFGM (Nano Floating Gate Memory), PoRAM (Polymer Random Access Memory), MRAM (Magnetic Random Access Memory), and FRAM (Ferroelectric Random Access Memory) and / or volatile storage devices such as DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), and mobile DRAM. The storage device 530 may include solid-state drives (SSDs), hard disk drives (HDDs), CD-ROMs, etc. The input / output device 540 may include input methods such as a keyboard, keypad, touch keyboard, touch screen, and mouse, and output methods such as a speaker and printer. The power supply 550 can supply the power required for the operation of the electronic device 500.

[0131] The display device 560 can be connected to other components via the bus or other communication links. According to an embodiment, the display device 560 may also be included in the input / output device 540. As described above, the display device 560 includes a substrate as a rigid substrate, and while sealing the light-emitting layer with a thin-film encapsulation layer, an opening region for arranging the optical module can be formed. This provides a display device that reduces manufacturing costs and improves quality. Furthermore, by removing on-layer structures other than the substrate from the opening region, performance degradation of the optical module due to interference caused by air gaps can be prevented.

[0132] However, this has already been described above, so I will omit the need to repeat it here.

[0133] (Industry availability)

[0134] This invention is applicable to organic light-emitting display devices and various electronic devices including such organic light-emitting display devices. For example, this invention is applicable to portable telephones, smartphones, videophones, smart tablets, smartwatches, desktop PCs, vehicle navigation systems, televisions, computer monitors, laptops, head-mounted displays, etc.

[0135] The present invention has been described above with reference to various exemplary embodiments. However, those skilled in the art should understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the invention as set forth in the claims.

Claims

1. A display device, comprising: The substrate includes: an opening region through which light passes; an opening periphery region surrounding the opening region and serving as a non-display area; and a display area surrounding the opening periphery region, having a plurality of pixels disposed thereon, and displaying an image. An insulating layer is disposed on the substrate in the area surrounding the opening, excluding the opening area, and in the display area; A through-hole insulating layer, disposed on the insulating layer in the peripheral region of the opening (excluding the opening region) and the display area; and A thin-film encapsulation layer includes a first inorganic film and a second inorganic film disposed on the substrate having the through-hole insulating layer, in the peripheral region of the opening (excluding the opening region) and the display region. The substrate is located in the opening region. The area surrounding the opening includes a thermal deformation zone formed in the portion that connects with the opening area. The first inorganic film and the second inorganic film of the thin film encapsulation layer are disposed in the heat deformation zone, while the insulating layer and the through-hole insulating layer are not disposed in the heat deformation zone.

2. The display device according to claim 1, wherein, The substrate is a rigid substrate.

3. The display device according to claim 1, wherein, In the opening region, the surface roughness of the substrate is greater than that in the periphery region of the opening and in the display region.

4. The display device according to claim 1, further comprising: A first electrode is disposed on the through-hole insulating layer within the display area; A light-emitting layer is disposed on the first electrode; as well as The second electrode is disposed on the light-emitting layer.

5. The display device according to claim 4, wherein, The second electrode is located away from the opening region and is not positioned within the thermal deformation zone.

6. The display device according to claim 5, wherein, The light-emitting layer includes a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer disposed between the second electrode and the substrate, and collectively formed to correspond to a plurality of pixels. The hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer are located away from the opening region.

7. The display device according to claim 1, wherein, The first inorganic film of the thin film encapsulation layer is in contact with the substrate in the area surrounding the opening.

8. The display device according to claim 1, further comprising: A cover window is disposed on the thin-film encapsulation layer; as well as An optically transparent adhesive film is disposed between the thin film encapsulation layer and the cover window. In the opening region, the base plate and the cover window are far apart from each other.

9. The display device according to claim 8, wherein, An optically transparent adhesive film is disposed between the substrate and the cover window in the opening area.

10. The display device according to claim 1, further comprising: A cover window is disposed on the thin-film encapsulation layer; as well as An optically transparent resin is disposed between the cover window and the thin-film encapsulation layer. In the opening region, the optically transparent resin is disposed between the substrate and the cover window.

11. A method for manufacturing a display device, the display device comprising: An opening area that allows light to pass through; The area surrounding the opening region and serving as a non-display area; The method of manufacturing the display device includes: a display area surrounding the periphery of the opening and having a plurality of pixels configured to display an image; and a display area surrounding the periphery of the opening and having a plurality of pixels configured to display an image. The step of forming an insulating layer on a substrate; The step of forming a through-hole insulating layer on the insulating layer; The step of sequentially forming a first electrode, a light-emitting layer, and a second electrode on the through-hole insulating layer; The step of forming a thin-film encapsulation layer comprising a first inorganic film and a second inorganic film on the second electrode; and The step of removing each layer on the substrate in the opening region to expose the upper surface of the substrate. In the step of exposing the upper surface of the substrate, a thermal deformation zone is formed in the portion of the area surrounding the opening that is in contact with the opening region using a laser. The first inorganic film and the second inorganic film of the thin film encapsulation layer are disposed in the heat deformation zone, while the insulating layer and the through-hole insulating layer are not disposed in the heat deformation zone.

12. The method of manufacturing a display device according to claim 11, wherein, In the step of exposing the upper surface of the substrate, the laser is used to remove the layers on the substrate in the opening region, thereby making the surface roughness of the substrate in the opening region greater than the surface roughness of the substrate in the opening periphery region and the display region.

13. The method of manufacturing a display device according to claim 11, wherein, The step of forming the second electrode further includes: removing layers on the substrate for a portion of the opening region and the area surrounding the opening to expose the upper surface of the substrate.

14. The method of manufacturing a display device according to claim 11, further comprising: The step of forming an optically transparent adhesive film or an optically transparent resin on the thin film encapsulation layer; as well as The step of attaching a cover window onto the optically transparent adhesive film or the optically transparent resin.

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