Crystal edge detection system and detection method
By setting up optical components and a scanning electron microscope in the process chamber, and combining bright field and dark field light sources, the wafer edge pattern can be monitored in real time, solving the problems of high cost and real-time performance in wafer edge cleaning effect detection, and improving product yield and production efficiency.
CN112951733BActive Publication Date: 2026-07-21CHANGXIN MEMORY TECH INC
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Filing Date
- 2019-12-11
- Publication Date
- 2026-07-21
AI Technical Summary
Technical Problem
In existing technologies, the methods for detecting the edge washing effect of wafers are expensive and cannot be monitored in real time, resulting in the inability to detect defects in a timely manner, which affects product yield and performance.
Method used
Optical components and a scanning electron microscope are installed in the process chamber to monitor changes in the wafer edge pattern in real time. The data processing system determines center deviation and sends correction commands, and combines bright field and dark field light sources for detailed detection.
Benefits of technology
It enables real-time monitoring of wafer edge processing, timely detection of anomalies, improved process yield, cost savings, and eliminates the need for additional waiting time.
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Figure CN112951733B_ABST
Abstract
The present application relates to a kind of crystal edge detection system and detection method;Including: optical component element, in process chamber, and in process chamber for the side of wafer chuck used to adsorb wafer;Scanning electron microscope, in process chamber, and in wafer chuck side, for obtaining the first edge pattern of wafer before process treatment and the second edge pattern of wafer after process treatment;Data processing system is used to measure the width of the edge processing area of the wafer based on the second edge pattern and the first edge pattern, calibrates the defect in the edge processing area, and judges whether the center of wafer deviates from the center of wafer chuck, and sends correction instruction to the control system of process chamber when the center of wafer deviates from the center of wafer chuck.The present application can be monitored in real time after wafer edge process treatment, timely find the abnormality of edge processing area and whether the center of wafer deviates from the center of wafer chuck, save measurement cost and improve process yield.
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