Micromechanical assembly for a sensor or microphone device

Abstract

The invention relates to a micromechanical assembly for a sensor or microphone device, having a membrane carrier structure, a cavity configured in the membrane carrier structure and adjoining the membrane inner side, the membrane carrier structure having a membrane configured on a surface of the membrane carrier structure, a separation channel configured through the surface of the membrane carrier structure and extending to the cavity and completely surrounding the membrane, the separation channel being sealed in a medium-tight and / or air-tight manner by at least one separation channel sealing material, at least one etching channel being configured in the membrane carrier structure separately from the separation channel, which respectively extends from a first etching channel section thereof to a second etching channel section thereof, the first etching channel section opening into the cavity, the second etching channel section being sealed in a medium-tight and / or air-tight manner by at least one etching channel closure structure configured at least on an outer portion face of the surface of the membrane carrier structure, respectively.

Description

Technical Field

[0001] This invention relates to a micromechanical component for a sensor or microphone device. The invention also relates to a method for manufacturing the micromechanical component for a sensor or microphone device. Background Technology

[0002] Figures 1a to 1c A schematic cross-section is shown to illustrate a method for manufacturing a conventional semiconductor component according to prior art, which the applicant refers to as prior art.

[0003] In the use of Figures 1a to 1c In the schematically illustrated conventional method, a layer structure is first formed consisting of: at least one insulating layer 12a and 12b deposited on a substrate 10; a wiring layer 14 at least partially covering at least one insulating layer 12a and 12b; a first sacrificial layer (not shown) at least partially covering the wiring layer 14; a first semiconductor material layer and / or a first metal layer 16 at least partially covering the first sacrificial layer; a second sacrificial layer (not shown) at least partially covering the first semiconductor material and / or the first metal layer 16; and a second semiconductor material layer and / or a second metal layer 18 at least partially covering the second sacrificial layer. A diaphragm 20 is formed by means of the second semiconductor material layer and / or the second metal layer, such that the layer stack may also be referred to as a diaphragm carrier structure 22, having a diaphragm 20 constructed on a surface 22a of the diaphragm carrier structure 22. A separation channel 24 is structured through the surface 22a of the diaphragm carrier structure 22 such that the separation channel 24 completely surrounds the diaphragm 20 and extends into the internal volume occupied by the first and second sacrificial layers. The separation channel 24 can then be used for electrical insulation of the diaphragm 20. Furthermore, in the conventional method described herein, the separation channel 24 serves as an etching channel for etching the first and second sacrificial layers. In this way, a cavity 26 is constructed in the diaphragm carrier structure 22, with the inner side 20a of the diaphragm, pointing away from the diaphragm carrier structure 22, adjacent to this cavity 26. Intermediate results are... Figure 1a As shown in the image.

[0004] For the membrane carrier structure 22 to be used as part of a sensor or microphone device, the separation channel 24 needs to be sealed in a dielectric-sealed and / or air-sealed manner. For this purpose, a sealing layer 28 is typically formed by plasma-enhanced chemical vapor deposition (PECVD) or reactive sputtering (see [link to documentation]). Figure 1b Typically, silicon dioxide, silicon nitride, silicon carbide, and / or aluminum oxide are deposited as a sealing layer 28 using plasma-assisted chemical vapor deposition.

[0005] However, the sealing layer 28 formed by plasma-assisted chemical vapor deposition or reactive sputtering is typically konformed in the region of the separation channel 24, thus potentially forming a so-called tip 30 in the sealing layer 28 at the separation channel 24 (see [link to documentation]). Figure 1c Furthermore, the plasma-assisted chemical vapor deposition or reactive sputtering process used to form the sealing layer 28 affects the reference pressure set in the cavity 26.

[0006] For other characteristics of conventional semiconductor components, please refer to the description below. Summary of the Invention

[0007] The present invention creates a micromechanical component for a sensor or microphone device having features according to the invention, and a method for manufacturing the micromechanical component for a sensor or microphone device having features according to the invention.

[0008] Advantages of the present invention This invention creates micromechanical components, each having a diaphragm and a media-sealed and / or air-sealed sealing layer, without any so-called spitze in the region of the separation channel completely surrounding the diaphragm. Therefore, in the case of the micromechanical component according to the invention, there is no need to worry about pressure loads on the diaphragm causing tensile stress in the region of at least one spit of the sealing layer, thereby initiating a rip in the sealing layer or a change in reference pressure present in its cavity. Therefore, compared to the prior art, the micromechanical component according to the invention, or the sensor or microphone device equipped with such a micromechanical component, has a longer service life and higher reliability.

[0009] Another advantage of this invention is that the resulting production method can be carried out relatively simply and with reasonable operating costs. The manufacturing process can be performed using readily machinable and relatively inexpensive materials. Therefore, although the lifespan of the micromechanical components created by means of this invention is increased compared to the prior art, they can be manufactured at a relatively cost-effective rate. Furthermore, miniaturization of the micromechanical components according to this invention is relatively easy to achieve.

[0010] In an advantageous embodiment of a micromechanical component, at least one etch channel sealing structure is an etch channel sealing layer that seals at least one second etch channel segment of at least one etch channel in a dielectric and / or airtight manner and is composed of molten material from at least the outer portion of the surface of a diaphragm carrier structure. The region of the surface of the diaphragm carrier structure located outside the diaphragm and outside the separation channels surrounding the diaphragm is referred to as the outer portion. Therefore, the sealing of at least one etch channel can be readily implemented by melting the material of at least the outer portion using a laser. Materials that can be melted by a laser (e.g., silicon) are commonly used in semiconductor technology. If the material of at least the outer portion is melted in a pressure-regulated processing chamber, arbitrary internal cavity pressure can be established or achieved.

[0011] Alternatively, at least one etch channel sealing structure can be a eutectic that seals at least one second etch channel segment of at least one etch channel in a dielectric and / or air-sealed manner and is constructed at least on the outer portion of the surface of the diaphragm carrier structure. It is also relatively simple to form at least one eutectic that seals at least one second etch channel segment in a dielectric and / or air-sealed manner. If the material of at least the outer portion of the surface of the diaphragm carrier structure is silicon, gold can be deposited, for example, at the entrance of at least one second etch channel segment, so that at least one eutectic can be readily formed into an AuSi eutectic by raising the temperature to at least 360°C in a furnace—e.g., an RTA furnace (Rapid Thermal Annealing Ofen)—or by laser. If germanium is deposited / placed at the entrance of at least one etch channel segment, in addition to a gold-silicon (AuSi) eutectic, a eutectic can also be formed by the additional deposition of gold or aluminum, which is gold and germanium or gold, silicon, germanium, or aluminum, and includes germanium or aluminum, germanium, silicon, and / or copper. Alternatively, the limited internal cavity pressure can be sealed within the cavity by performing the treatment in a pressure-regulated treatment chamber.

[0012] At least one separation channel sealing material is preferably electrically insulating. It is also advantageous if at least one separation channel sealing material has high etch resistance to both liquid and gaseous forms of hydrogen fluoride. In this case, after sealing the separation channel with at least one separation channel sealing material in a media-sealed and / or air-sealed manner, hydrogen fluoride can also be used as a reliable etching medium for forming the cavity by removing silicon dioxide, which serves as at least one sacrificial layer material.

[0013] At least one separation channel sealing material may include, for example, a silicon-rich nitride. Silicon-rich nitrides are dielectric-sealing, air-sealing, electrically insulating, and have high etch resistance to hydrogen fluoride.

[0014] In an advantageous embodiment of the manufacturing method, at least one second etched channel segment of at least one etched channel is sealed by an etched channel sealing layer, which serves as an etched channel sealing structure, in a manner of media sealing and / or air sealing. This is achieved by using a laser to melt the material of at least the outer portion of the surface of the diaphragm carrier structure. Such a method step can be readily implemented, particularly when silicon, silicon dioxide, and / or silicon nitride are the materials of the outer portion of the surface of the diaphragm carrier structure.

[0015] Alternatively, at least one second etch channel segment of at least one etch channel can be sealed as at least one etch channel sealing structure by means of a eutectic formed at least on the outer portion of the surface of the film carrier structure, in a dielectric-sealed and / or air-sealed manner. Such a eutectic can also be formed by relatively easy-to-implement method steps.

[0016] As an alternative, at least one second etched channel segment of at least one etched channel can be sealed by means of an etched channel sealing layer as at least one etched channel sealing structure in a media-sealed and / or air-sealed manner: the etched channel sealing layer is formed at least on the outer surface of the surface of the film carrier structure by plasma-assisted chemical vapor deposition, reactive sputtering, low-pressure chemical vapor deposition (LPCVD) and / or by evaporation plating.

[0017] Preferably, at least one separation channel sealing material is deposited by low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), and / or reactive sputtering, such that the separation channel is sealed by at least one separation channel sealing material in a media-sealed and / or air-sealed manner. Since the internal volume is still filled with at least one sacrificial layer material during the LPCVD or reactive sputtering process, at least one separation channel sealing material can be deposited in this manner without problems, without concern about the deposition of at least one separation channel sealing material within the subsequently constructed cavity and therefore on sensitive / sensitive structures within the cavity. Therefore, the advantages of LPCVD, PECVD, or reactive sputtering processes can be used without problems in the embodiments of the manufacturing method described herein, such as, in particular, the uniform and non-porous seal formed by at least one separation channel sealing material. Attached Figure Description

[0018] Other features and advantages of the invention will now be described with reference to the accompanying drawings. The drawings show: Figures 1a to 1c : A schematic cross-sectional view illustrating a method implemented according to the prior art for manufacturing conventional semiconductor components; Figures 2a to 2d : A schematic cross-sectional view used to illustrate the first embodiment of the manufacturing method; Figure 3 : A schematic cross-sectional view used to illustrate the second embodiment of the manufacturing method. Detailed Implementation

[0019] Figures 2a to 2d A schematic cross-section is shown to illustrate a first embodiment of the manufacturing method.

[0020] In the manufacturing method described below, an internal volume V filled with at least one sacrificial layer material is formed in the diaphragm carrier structure 22. Furthermore, a diaphragm 20 is formed on the surface 22a of the diaphragm carrier structure 22 such that the diaphragm carrier structure has an inner diaphragm side 20a pointing away from the surface 22a of the diaphragm carrier structure 22 and an outer diaphragm side 20b located on the surface 22a of the diaphragm carrier structure 22, such that the inner diaphragm side 20a is adjacent to the internal volume V filled with at least one sacrificial layer material.

[0021] This is an example of... Figures 2a to 2dThe manufacturing method illustrated schematically is implemented by first depositing and / or forming at least one insulating layer 12a and 12b on the substrate surface 10a of the substrate 10, such that the substrate surface 10a is at least partially covered by the at least one insulating layer 12a and 12b. The substrate 10 is preferably a silicon substrate or a silicon wafer. In particular, a silicon dioxide layer 12a and a silicon-rich nitride layer 12b can be formed as at least one insulating layer 12a and 12b. Next, at least one insulating layer 12a and 12b are at least partially covered by a wiring layer 14. The wiring layer 14 can be / comprise, for example, a metal layer, particularly a metal silicide layer and / or a metal alloy layer and / or a doped silicon layer / polysilicon layer. For example, at least one measurement counter electrode 14a, at least one reference counter electrode 14b, at least one printed wire 14c, and at least one substrate contact 14d extending through at least one insulating layer 12a and 12b to the substrate 10 can be formed / structured by the wiring layer 14a.

[0022] Next, a first sacrificial layer 15, composed of at least one sacrificial layer material, is deposited, which at least partially covers the wiring layer 14 or the structures 14a to 14d formed / constructed by the wiring layer 14. The first sacrificial layer 15 is preferably formed of silicon dioxide. Then, a first semiconductor layer and / or a first metal layer 16 are deposited, which at least partially covers the first sacrificial layer 15. The first semiconductor layer and / or the first metal layer 16 may include at least one metal, such as at least one metal silicide layer and / or at least one metal alloy, and / or include doped silicon / polysilicon. For example, the first semiconductor material layer and / or the first metal layer 16 is a doped silicon / polysilicon layer. At least one (subsequently) adjustable measurement electrode 16a, at least one fixed reference electrode 16b, and / or a portion 16c of a subsequent support structure may be formed / structured from the first semiconductor material layer and / or the first metal layer 16.

[0023] Next, the first semiconductor material layer and / or the first metal layer 16 are at least partially covered by a second sacrificial layer 17 made of at least one sacrificial layer material. The second sacrificial layer 17 may also be a silicon dioxide layer. A second semiconductor material layer and / or a second metal layer 18 is then formed, which at least partially covers the second sacrificial layer 17, and a portion thereof may serve as a film 20. The second semiconductor material layer and / or the second metal layer 18 may also include at least one metal, such as at least one metal silicide layer and / or at least one metal alloy, and / or doped silicon / polysilicon. For example, the second semiconductor material layer and / or the second metal layer 18 is a doped silicon / polysilicon layer.

[0024] As in Figure 2aAs can be seen, the membrane carrier structure 22 formed in this way has a partial volume occupied by the regions of the first sacrificial layer 15 and the second sacrificial layer 17, which can be referred to as the internal volume V filled with at least one sacrificial layer material. The method steps for forming the membrane carrier structure 22 described above are merely exemplary. Similarly, the structure of the membrane carrier structure 22 described below can only be understood as an example: the membrane carrier structure has a measuring capacitance C including at least one measuring counter electrode 14a and at least one measuring electrode 16a. measure And a reference capacitor C including at least one reference counter electrode 14b and at least one reference electrode 16b. ref .

[0025] Next, the separation channel 24 is structured to pass through the surface 22a of the membrane carrier structure 22 such that the separation channel 24 extends into an internal volume V filled with at least one sacrificial layer material and completely surrounds the membrane 20. The separation channel 24 is at least partially surrounded by the outer portion of the surface 22a of the membrane carrier structure 22. The shape or cross-section of the separation channel 24 can be designed, in particular, to be V-shaped. The advantages of this configuration of the separation channel will be discussed below.

[0026] from Figure 2a It can also be seen that, in forming the layer structure used as the subsequent membrane carrier structure 22, at least one etched channel 34 is also at least partially constructed in the membrane carrier structure 22 such that at least one (subsequent) etched channel 34 extends through the membrane carrier structure 22 separately from the separation channel 24. The at least one etched channel 34 is constructed such that at least one first etched channel segment 34a of the at least one etched channel 34 extends into the internal volume V filled with at least one sacrificial layer material. Furthermore, the at least one etched channel 34 is also constructed such that at least one second etched channel segment 34b of the at least one etched channel 34 penetrates the outer portion of the surface 22a of the membrane carrier structure 22, and the at least one etched channel 34 extends from its first etched channel segment 34a to its second etched channel segment 34b. The at least one second etched channel segment 34b may also optionally be constructed to have a V-shape or a V-shaped cross-section. At least one second etch channel segment 34b can be structured together with the separation channel 24, for example, by means of an etching method through the second semiconductor material layer and / or the second metal layer 18. Alternatively, at least one second etch channel segment 34b can also be fabricated at a different time than the separation channel 24, particularly after the closure of the separation channel 24 as described below. At least one etch channel 34 can also be referred to as an etch channel or an etch inlet (Ätzzugang), respectively. Intermediate results in Figure 2a As shown in the image.

[0027] like Figure 2bAs shown, the separation channel 24 is sealed by at least one separation channel sealing material 36 in a media-sealed and / or air-sealed manner. The at least one separation channel sealing material is preferably electrically insulating. In this case, the separation channel 24, sealed mediatically or airtightly by at least one separation channel sealing material 36, allows the diaphragm 20 to be reliably electrically insulating. The V-shape or V-section ensures that no sharp points 30 or unstetigkeiten / lunkers appear in the at least one separation channel sealing material 36.

[0028] At least one separation channel sealing material 36 preferably also has high etch resistance to at least one etching medium, such that the corresponding etching medium can be used after the separation channel 24 is sealed in a media-sealed / air-sealed manner without damaging the media-sealed / air-sealed seal of the separation channel 24. At least one separation channel sealing material 36 advantageously has high etch resistance to liquid and gaseous hydrogen fluoride. For example, silicon-rich nitrides can be used as at least one separation channel sealing material 36, especially as the sole separation channel sealing material 36.

[0029] Since the internal volume V remains filled with at least one sacrificial layer material during the air-sealing or air-tight sealing of the separation channel 24 by at least one separation channel sealing material 36, a consistent deposition process—such as Low Pressure Chemical Vapor Deposition (LPCVD)—can be used to deposit at least one separation channel sealing material 36 without undesirably introducing at least one separation channel sealing material 36 into the internal volume V and without concern about the appearance of tips 30 or discontinuities / porosity in at least one separation channel sealing material 36. Therefore, at least one sacrificial layer material in the internal volume V serves as a “storage surface” within the separation channel 24 during the deposition of at least one separation channel sealing material 36. Thus, the separation channel 24 is consistently and air-tightly sealed by at least one separation channel sealing material 36 via, for example, low-pressure chemical vapor deposition.

[0030] After at least one separation channel sealing material 36 is deposited, the deposited separation channel sealing material 36 can be optionally structured such that it exists (almost) only in the region of the separation channel 24. Therefore, coating the membrane 20 with at least one separation channel sealing material 36 can be avoided / removed, thus eliminating the need to accept undesirable stress input from applying at least one separation channel sealing material 36 to the membrane 20.

[0031] Figure 2cThe process illustrates the removal of at least one sacrificial layer material from the internal volume V, guided by an etching medium via at least one etching channel 34, after the separation channel 24 is sealed in an air-tight manner. In this way, the cavity 26 is formed by removing at least one sacrificial layer material from the internal volume V. It is explicitly noted that the separation channel 24 is sealed in a media-tight / air-tight manner during etching of at least one etching material with the etching medium, so that the etching medium is guided only through at least one etching channel 34 constructed separately from the separation channel 24 in the diaphragm carrier structure 22. The at least one separation channel sealing material 36 preferably has high etch resistance to the etching medium used. If the internal volume V is filled with silica as at least one sacrificial layer material, liquid or gaseous hydrogen fluoride can advantageously be used as the etching medium.

[0032] If at least one etch channel 34 is also at least partially filled with at least one sacrificial layer material before removing at least one sacrificial layer material from the internal space V, then at least one sacrificial layer material present in at least one etch channel 34 can also be removed by means of an etching medium guided through at least one etch channel 34. Optionally, at least one etch channel 34 can also be laterally bounded by an etch stop structure made of at least one material resistant to etching medium, thereby enabling precise geometry and defined orientation / position of at least one etch channel 34.

[0033] The manufacturing method described herein is based on Figure 2d At least one second etched channel segment 34b of at least one etched channel 34, schematically shown, is sealed in a media-sealed / air-sealed manner by means of at least one etched channel closure structure 38, which is constructed in the region where at least one second etched channel segment 34b extends through the outer portion of the surface 22a of at least one diaphragm carrier structure 22. Since at least one second etched channel segment 34b is relatively far from the cavity 26, various methods can be used to seal at least one second etched channel segment 34b in an air-sealed manner, methods that are not / virtually unsuitable for sealing the separation channel 24 in a media-sealed / air-sealed manner. For sealing at least one second etched channel segment 34b of at least one etched channel 34 in a media-sealed / air-sealed manner, a method can also be used to confine a relatively low reference pressure p0 within the cavity 26. In this way, the diaphragm 20 can also be used to confirm / measure a relatively low pressure P on its outer surface 20b and / or to detect acoustic waves with relatively low intensity, particularly achieving low temperature dependence of the measurement signal.

[0034] exist Figure 2dIn the example, at least one second etched channel segment 34b of at least one etched channel 34 is sealed, for example, by means of an etched channel sealing layer 38 as at least one etched channel sealing structure 38 in a dielectric-sealed / air-sealed manner. The etched channel sealing layer 38 is formed on the outer portion of the surface 22a of the membrane carrier structure 22 by plasma-enhanced chemical vapor deposition (PECVD), by reactive sputtering, by low-pressure chemical vapor deposition (LPCVD), and / or by evaporation. Conversely to the separation channel sealing material 36, the material used to seal at least one second etched channel segment 34b of at least one etched channel can also be selected to be conductive. Since the corresponding openings of at least one second etched channel segment 34a on the outer portion of the surface 22a of the diaphragm carrier structure 22 (especially compared to the openings of the separation channel 24 on the surface 22a of the diaphragm carrier structure 22) are relatively small, under normal pressure loads on the diaphragm 20, the stress coupled to at least one etched channel sealing structure 38 by the pressure load is negligible compared to the stress coupled to the separation channel sealing material 36 surrounding the diaphragm 20 and sealing the separation channel 24. Thus, even if a tip is formed in at least one etched channel sealing structure 38, no cracks will be initiated in the etched channel sealing structure 38 or changes in the reference pressure present in the cavity 26, and therefore no component failure will occur. After at least one second etched channel section 34b is sealed in a dielectric-sealed / air-sealed manner, at least one insulating layer (not shown), at least one contact / diffusion barrier layer 40a, at least one printed conductor 40b, at least one insulating layer / passivation layer 42 and / or at least one bond pad opening 44 (optionally only outside the film 20) are constructed / arranged on the etched channel closure structure 38 formed by plasma-assisted chemical vapor deposition, reactive sputtering and / or evaporation deposition.

[0035] Figure 3 A schematic cross-sectional view is shown to illustrate a second embodiment of the manufacturing method.

[0036] With the help of Figure 3The schematically illustrated manufacturing method differs from the aforementioned embodiments only in that at least one second etch channel segment 34b of at least one etch channel 34 is sealed in a dielectric / air-sealed manner by a eutectic 50 as at least one etch channel sealing structure 38. This eutectic is constructed in the region through which at least one second etch channel segment 34b penetrates the outer portion of the surface 22a of the diaphragm carrier structure 22. If the material of the outer portion of the surface 22a of the diaphragm carrier structure 22 in the region through which at least one second etch channel segment 34b penetrates is at least partially silicon or germanium, then, for example, gold can be further deposited on at least one second etch channel segment 34b, thereby allowing at least one eutectic 50 to be readily formed into an AuSi eutectic, an AuGe eutectic, or a eutectic comprising gold, silicon, and germanium by raising the temperature to at least 360°. Furthermore, as an alternative to gold, a layer of aluminum, aluminum / silicon, or aluminum / silicon / copper, known from standard semiconductor processes, can be deposited on at least one second etch channel segment 34b, thereby forming at least one eutectic 50 of aluminum and / or germanium and / or silicon and / or copper by raising the temperature to at least 420°C. The at least one second etch channel segment 34b is sealed within the cavity 26 by the eutectic 50, allowing a relatively low reference pressure p0.

[0037] about Figure 3 Other features and advantages of the manufacturing method are described in the above embodiments.

[0038] Alternatively, at least one second etched channel segment 34b of at least one etched channel 34 can also be sealed in a media-sealed / air-sealed manner by means of an etched channel closure layer serving as at least one etched channel closure structure 38, by means of laser melting of material in a region of at least one second etched channel segment 34b penetrating through the outer portion of the surface 22a of the diaphragm carrier structure 22. Sealing at least one second etched channel segment 34b by means of an etched channel closure layer also allows a relatively low reference pressure p0 to be contained within the cavity 26.

[0039] Figure 2d and 3Embodiments of a micromechanical component for a sensor or microphone device according to the invention are also shown. Such a micromechanical component according to the invention includes a diaphragm carrier structure 22 having a diaphragm 20 constructed on a surface 22a of the diaphragm carrier structure 22, the diaphragm having an inner diaphragm side 20a pointing away from the surface 22a of the diaphragm carrier structure 22 and an outer diaphragm side 20b located on the surface 22a of the diaphragm carrier structure 22, having a cavity 26 constructed in the diaphragm carrier structure 22, the inner diaphragm side 20a being adjacent to the cavity, and having a separation channel 24 structured by the surface 22a of the diaphragm carrier structure 22, the separation channel extending to the cavity 26 and completely surrounding the diaphragm 20, the separation channel being at least partially surrounded by an outer portion of the diaphragm carrier structure, and the separation channel being sealed by at least one separation channel sealing material 36 in a media-sealed / air-sealed manner. Furthermore, the micromechanical component according to the invention has at least one etched channel 34 constructed separately from the separation channel 24 in the diaphragm carrier structure 22, which extends from its first etched channel section 34a to its second etched channel section 34b, wherein at least one first etched channel section 34a of at least one etched channel 34 opens into the cavity 26, and at least one second etched channel section 34b of at least one etched channel 34 is sealed by means of an etched channel sealing structure 38 or 50 constructed in the region of the at least one second etched channel section 34b extending through the outer portion of the surface 22a of the diaphragm carrier structure 22 in a media-sealed and / or gas-sealed manner.

[0040] about Figure 2d and 3 For other features and advantages of the micromechanical components, refer to the manufacturing method described above.

Claims

1. A micromechanical component for a sensor or microphone device, the micromechanical component having: A diaphragm carrier structure (22) comprising: a substrate (10); at least one insulating layer (12a, 12b) at least partially covering a substrate surface (10a) of the substrate (10); a wiring layer (14) at least partially covering the at least one insulating layer (12a, 12b); a first sacrificial layer (15) at least partially covering the wiring layer (14); a first semiconductor layer and / or a first metal layer (16) at least partially covering the first sacrificial layer (15); a second sacrificial layer (17) at least partially covering the first semiconductor layer and / or the first metal layer (16); and a second semiconductor material layer and / or a second metal layer (18) at least partially covering the second sacrificial layer (17), wherein a portion of the second semiconductor material layer and / or the second metal layer serves as a diaphragm (20), the diaphragm being constructed at a surface (22a) of the diaphragm carrier structure (22) and having an inner side (20a) of the diaphragm pointing away from the surface (22a) of the diaphragm carrier structure (22). A cavity (26) is constructed in the membrane carrier structure (22) and adjacent to the inner side (20a) of the membrane; A separation channel (24) is structured through the surface (22a) of the membrane carrier structure (22) and extends into the cavity (26) and completely surrounds the membrane (20). The separation channel is at least partially surrounded by the outer portion of the surface (22a) of the membrane carrier structure (22), and the separation channel is sealed by at least one separation channel sealing material (36) in a media-sealed manner. Its features are, At least one etched channel (34) is constructed separately from the separation channel (24) in the membrane carrier structure (22). The at least one etched channel extends from a first etched channel section (34a) to a second etched channel section (34b). The at least one first etched channel section (34a) leads into the cavity (26), and the at least one second etched channel section (34b) is sealed in a medium-sealed manner by means of at least one etched channel sealing structure (38) constructed at least on the outer portion of the surface (22a) of the membrane carrier structure (22).

2. The micromechanical assembly according to claim 1, wherein The first sacrificial layer (15) at least partially covers the structure formed by the wiring layer (14).

3. The micromechanical component according to claim 1, wherein, The at least one etch channel sealing structure is an etch channel sealing layer as follows: the etch channel sealing layer seals at least one second etch channel segment (34b) of the at least one etch channel (34) in a medium-sealing manner, and the etch channel sealing layer is composed of at least the molten material of the outer portion of the surface (22a) of the membrane carrier structure (22).

4. The micromechanical component according to claim 1, wherein, The at least one etch channel sealing structure is a eutectic (50) that seals at least one second etch channel segment (34b) of the at least one etch channel (34) in a dielectric sealing manner, and the eutectic is at least constructed on the outer portion of the surface (22a) of the diaphragm carrier structure (22).

5. The micromechanical component according to any one of the preceding claims, wherein, The at least one separation channel sealing material (36) is electrically insulating and has high etch resistance to liquid and gaseous hydrogen fluoride.

6. The micromechanical component according to claim 5, wherein, The at least one separation channel sealing material (36) includes silicon-rich nitrides.

7. A method for manufacturing a micromechanical component according to any one of claims 1 to 6, the method comprising the following steps: An internal volume (V) is constructed in the membrane carrier structure (22), the internal volume being filled with at least one sacrificial layer material; A membrane (20) is constructed on the surface (22a) of the membrane carrier structure (22) such that the inner side (20a) of the membrane is adjacent to an internal volume (V) filled with the at least one sacrificial layer material, wherein, The membrane carrier structure has an inner side (20a) of the membrane that is away from the surface (22a) of the membrane carrier structure (22). The separation channel (24) is structured to pass through the surface (22a) of the membrane carrier structure (22), the separation channel extending to the internal volume (V) filled with the at least one sacrificial layer material and completely surrounding the membrane (20), and the separation channel is at least partially surrounded by the outer portion of the surface (22a) of the membrane carrier structure (22); At least one etch channel (34) is constructed in the membrane carrier structure (22) separately from the separation channel (24) such that at least one first etch channel segment (34a) leads to an internal volume (V) filled with the at least one sacrificial layer material, and at least one second etch channel segment (34b) penetrates an outer portion of the surface (22a) of the membrane carrier structure (22), wherein the at least one etch channel extends from the first etch channel segment (34a) of the at least one etch channel to the second etch channel segment (34b) of the at least one etch channel. The separation channel (24) is sealed by means of at least one separation channel sealing material (36) in a medium-sealing manner; After the separation channel (24) is sealed in a medium-sealed manner, at least one sacrificial layer material is removed from the internal volume (V) by means of an etching medium guided through at least one etching channel (34); At least one second etch channel segment (34b) of the at least one etch channel (34) is sealed in a medium-sealed manner by means of at least one etch channel sealing structure (38) constructed on the outer portion of the surface (22a) of the membrane carrier structure (22).

8. The manufacturing method according to claim 7, wherein, At least one second etch channel segment (34b) of the at least one etch channel (34) is sealed by means of an etch channel sealing layer as the at least one etch channel sealing structure in a medium-sealing manner, wherein: The etched channel sealing layer is generated by melting the material of at least the outer portion of the surface (22a) of the membrane carrier structure (22) using a laser.

9. The manufacturing method according to claim 7, wherein, At least one second etch channel segment (34b) of the at least one etch channel (34) is sealed in a medium-sealed manner by means of a eutectic (50) as the at least one etch channel sealing structure: the eutectic is at least constructed on the outer portion of the surface (22a) of the diaphragm carrier structure (22).

10. The manufacturing method according to claim 7, wherein, At least one second etch channel segment (34b) of the at least one etch channel (34) is sealed in a medium-sealed manner by means of an etch channel sealing layer as the at least one etch channel sealing structure (38): the etch channel sealing layer is formed by plasma-assisted chemical vapor deposition, by reactive sputtering, by chemical vapor deposition performed at low pressure and / or by evaporation deposition at least on the outer portion of the surface (22a) of the film carrier structure (22).

11. The manufacturing method according to any one of claims 7 to 10, wherein, The at least one separation channel sealing material (36) is deposited by means of chemical vapor deposition, plasma-assisted chemical vapor deposition and / or reactive sputtering performed at low pressure, so that the separation channel (24) is sealed by means of the at least one separation channel sealing material (36) with a medium seal.

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