用于稳定反应室压力的系统和方法
By installing a gas supply system in the reaction chamber, the pressure in the reaction chamber can be monitored and adjusted in real time, which solves the problem of unstable deposition quality caused by pressure fluctuations in the reaction chamber, improves the stability of the deposition layer and the process control capability, and ensures the reliability of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ASM IP HLDG BV
- Filing Date
- 2021-01-13
- Publication Date
- 2026-07-17
AI Technical Summary
In semiconductor manufacturing, pressure fluctuations in the reaction chamber lead to unstable deposited layer quality, making it difficult to achieve the desired device stability and process control.
By installing a gas supply system in the reaction chamber, including first and second gas sources, gas supply path, exhaust pipeline, ventilation pipeline, pressure monitor and ventilation pipeline transmission control valve, the pressure in the reaction chamber can be monitored and regulated in real time, ensuring dynamic balance between gas supply and exhaust, and maintaining a basically constant pressure in the reaction chamber.
Effective control of the reaction chamber pressure improves the quality stability and process control capability of the deposited layer, ensuring the reliability and consistency of devices during semiconductor manufacturing.
Smart Images
Figure CN113151810B_ABST