Method for manufacturing semiconductor device, light-absorbing laminate, and laminate for temporary fixing

Abstract

This invention discloses a method for manufacturing a semiconductor device, comprising: a processing step of processing a semiconductor component temporarily fixed to a support member via a temporary fixing material layer; and a separation step of irradiating an incoherent light onto a temporary fixing laminate from the support member side, thereby separating the semiconductor component from the support member. Part or all of the temporary fixing material layer is a light-absorbing layer that absorbs light and generates heat. The support member has a transmittance of 90% or more relative to incoherent light. The temporary fixing material layer has a transmittance of 3.1% or less relative to incoherent light.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device, a light-absorbing laminate, and a laminate for temporary fixation. Background Technology

[0002] In the manufacture of semiconductor components, the semiconductor components are sometimes processed after integrated circuits are assembled into semiconductor wafers or other semiconductor parts. Processing treatments on the semiconductor components include, for example, back-side grinding or dicing. Semiconductor components are typically processed while temporarily fixed to a support member, after which they are separated from the support member. For example, Patent Document 1 discloses a method for separating a semiconductor component from its support member by temporarily fixing the semiconductor component to the support member via a temporary fixing material layer, processing it, and then physically separating the semiconductor component from its support member while heating it. Patent Documents 2 and 3 disclose a method for separating a semiconductor component from its support member by irradiating a temporary fixing material layer with a laser.

[0003] Previous technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-126803

[0006] Patent Document 2: Japanese Patent Application Publication No. 2016-138182

[0007] Patent Document 3: Japanese Patent Application Publication No. 2013-033814 Summary of the Invention

[0008] The technical problem to be solved by the invention

[0009] The present invention relates to a method for manufacturing a semiconductor apparatus, including a process for processing a semiconductor component temporarily fixed to a support member, and provides a method for easily separating the processed semiconductor component from the support member through a simple process.

[0010] means for solving technical problems

[0011] A method for manufacturing a semiconductor device according to one aspect of the present invention comprises, in sequence:

[0012] A process for preparing a temporary fixation laminate, the temporary fixation laminate having a support member and a temporary fixation material layer disposed on the support member, the temporary fixation material layer having a curable resin layer, the curable resin layer including at least one outermost surface of the temporary fixation material layer.

[0013] In the temporary fixing process, a semiconductor component having a semiconductor substrate and a redistribution layer disposed on one side of the semiconductor substrate is temporarily fixed to the support component via the temporary fixing material layer with the redistribution layer facing the side of the curable resin layer.

[0014] The processing steps include processing the semiconductor component temporarily fixed to the support component; and

[0015] In the separation process, incoherent light is irradiated onto the temporary fixing laminate from the support member side, thereby separating the semiconductor component from the support member.

[0016] The temporary fixing material layer has a light-absorbing layer that absorbs light and generates heat. This light-absorbing layer is provided as part of or different from the curable resin layer. The support member has a transmittance of 90% or more relative to the incoherent light. The temporary fixing material layer has a transmittance of 3.1% or less relative to the incoherent light.

[0017] According to the method described above, the self-supporting components of the processed semiconductor device can be easily separated through a simple process of irradiation with incoherent light. Compared with irradiation by laser light, which is coherent light, irradiation with incoherent light can easily ensure a large irradiation area, and therefore can be performed simply. By using a combination of a temporary fixing material layer containing a support component with a specific transmittance and a light-absorbing layer, even with irradiation by incoherent light, the semiconductor device can be made to be easily separated from the self-supporting components.

[0018] Invention Effects

[0019] According to the present invention, a method for manufacturing a semiconductor apparatus, including a step of processing a semiconductor component temporarily fixed to a support member, is provided to easily separate the processed semiconductor component from the support member through a simple process. The method of the present invention can easily separate the processed semiconductor component from the support member even with low-energy incoherent light. By using low-energy incoherent light, damage to fine structures such as the rewiring layer of the semiconductor component can be suppressed. Attached Figure Description

[0020] Figure 1 middle, Figure 1 (a) Figure 1 (b) and Figure 1 (c) is a schematic diagram illustrating one embodiment of a method for manufacturing a semiconductor device.

[0021] Figure 2 This is a schematic diagram illustrating one embodiment of a light-absorbing laminate.

[0022] Figure 3 middle, Figure 3 (a) and Figure 3 (b) is a schematic diagram illustrating one embodiment of a method for manufacturing a semiconductor device.

[0023] Figure 4 middle, Figure 4 (a) and Figure 4 (b) is a schematic diagram illustrating one embodiment of a method for manufacturing a semiconductor device.

[0024] Figure 5 middle, Figure 5 (a) Figure 5 (b) and Figure 5 (c) is a schematic diagram illustrating one embodiment of a method for manufacturing a semiconductor device. Detailed Implementation

[0025] Hereinafter, several embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.

[0026] The sizes of the constituent elements in the figures referenced in this specification are conceptual sizes, and the relative sizes between the constituent elements are not limited to those shown in the figures. Sometimes, repeated descriptions are omitted.

[0027] The numerical values ​​and their ranges in this specification are not intended to limit the scope of the invention. In this specification, the numerical range indicated by "~" represents the range of minimum and maximum values, respectively, before and after the "~". In the numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range may be replaced by the upper or lower limit value of a numerical range described in another stage. The upper or lower limit value of the numerical range described in this specification may also be replaced by the values ​​shown in the embodiments.

[0028] In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. Other similar expressions such as (meth)acrylate, (meth)acryloyl, etc., are also used.

[0029] In order to manufacture a semiconductor device, a temporary fixing laminate is prepared, which is used to temporarily fix the semiconductor component to a support component during the processing of the semiconductor component. Figure 1 (a) Figure 1 (b) and Figure 1 (c) is a cross-sectional view showing several embodiments of the laminated body for temporary fixation. Figure 1 (a) Figure 1 (b) and Figure 1(c) The temporary fixation laminate 1 shown has a support member 10 and a temporary fixation material layer 30 disposed on the support member 10. The temporary fixation material layer 30 has a curable resin layer 31. The curable resin layer 31 includes the outermost surface S of the temporary fixation material layer 30 opposite to the support member 10. In addition, the temporary fixation material layer 30 has a light-absorbing layer 32 disposed as a layer different from the curable resin layer 31, or a light-absorbing layer 31B disposed as part of the curable resin layer 31. The light-absorbing layer 32 and the light-absorbing layer 31B are layers that absorb light and generate heat.

[0030] Figure 1 (a) The temporary fixing material layer 30 of the temporary fixing laminate 1 shown has: a curable resin layer 31, including the outermost surface S opposite to the support member 10; and a light-absorbing layer 32, which is provided as a layer different from the curable resin layer 31. In other words, the light-absorbing layer 32 and the curable resin layer 31 are sequentially stacked on the support member 10.

[0031] Figure 1 (b) The temporary fixing material layer 30 of the temporary fixing laminate 1 shown includes a curable resin layer 31 that includes a light-absorbing layer 31B as part thereof. The curable resin layer 31 here has: a light-absorbing layer 31B, including the outermost surface S; and a substantially non-heat-generating curable resin layer 31A disposed on the support member 10 side of the light-absorbing layer 31B.

[0032] exist Figure 1 In the case of the temporary fixing material layer 30 of the temporary fixing laminate 1 shown in (c), not only is it provided with the same as Figure 1 (b) Similarly, the light-absorbing layer 31B is also provided with a light-absorbing layer 32 that is a layer different from the curable resin layer 31. Alternatively, a light-absorbing layer constituting part of the curable resin layer 31 can be provided between the curable resin layer 31A and the support member 10 to replace the light-absorbing layer 32 that is a layer different from the curable resin layer 31.

[0033] The temporary fixing laminate 1 can be obtained, for example, by sequentially forming layers on the support member 10. Alternatively, a laminated film having a curable resin layer and a light-absorbing layer can be prepared and laminated onto the support member 10. Figure 2 The illustrated light-absorbing laminate is used to obtain a temporary fixing laminate 1. Figure 2 The light-absorbing laminate 3 shown has a support member 10 and a light-absorbing layer 32 disposed on the support member 10. The light-absorbing layer 32 may also be a metal layer adjacent to the support member 10. The transmittance of the metal layer as the light-absorbing layer 32 relative to incoherent light irradiated by the xenon lamp may be 3.1% or less, 3.0% or less, 2.5% or less, or 1.5% or less, and may be 0% or more. Figure 1 (a) Figure 1 (b) and Figure 1 (c) The temporary fixing laminate 1 can also be considered as a laminate comprising a light-absorbing laminate and a curable resin layer. For example, it can be manufactured by a method including a process of forming a curable resin layer 31 on the light-absorbing layer 32 of the light-absorbing laminate 3. Figure 1 (a) Figure 1 (b) and Figure 1 (c) Temporary fixing laminate 1.

[0034] Figure 3 (a) and Figure 3 (b) Figure 4 (a) and Figure 4 (b) and Figure 5 (a) Figure 5 (b) and Figure 5 (c) is a process diagram illustrating one embodiment of a method for manufacturing a semiconductor device using a temporary fixing laminate. An example is shown here using... Figure 1 (a) is the method of temporary fixing laminate 1, but other temporary fixing laminates can also be used to manufacture semiconductor devices in the same way. Figure 3 (a) and Figure 3 (b)~ Figure 5 (a) Figure 5 (b) and Figure 5 (c) The method shown in the diagram includes, in sequence: a temporary fixing step, temporarily fixing the semiconductor component 45 to the support component 10 via a temporary fixing material layer 30. Figure 3 (a) and Figure 3 (b)); Processing step, processing the semiconductor component 45 temporarily fixed to the support component 10 ( Figure 4 (a)); Sealing process, forming a sealing layer 50 to seal the processed semiconductor component 45. Figure 4 (b)); and in the separation process, incoherent light A is irradiated onto the self-supporting component 10 side of the temporary fixing laminate 1, thereby separating the semiconductor component 45 from the self-supporting component 10. Figure 4 (b) The semiconductor component 45 has a semiconductor substrate 40 and a rewiring layer 41 disposed on one side of the semiconductor substrate 40. The semiconductor component 45 is disposed on the curable resin layer 31 with the rewiring layer 41 facing the side of the curable resin layer 31. The process of temporarily fixing the semiconductor component 45 to the support member 10 via the temporary fixing material layer 30 may include: disposing the semiconductor component 45 on the curable resin layer 31 with the rewiring layer 41 facing the side of the curable resin layer 31; and curing the curable resin layer 31.

[0035] The support member 10 and the temporary fixing material layer 30 constituting the temporary fixing laminate 1 have specific transmittance relative to incoherent light irradiating the temporary fixing laminate 1. The transmittance of the support member 10 relative to incoherent light is 90% or more. The transmittance of the temporary fixing material layer 30 relative to incoherent light is 3.1% or less. Due to the high transmittance of the support member 10 and the low transmittance of the temporary fixing material layer 30, the semiconductor component 45 can be easily separated from the support member 10 even when irradiated with low-energy incoherent light. If the energy of the incoherent light is low, the redistribution layer 41 or other peripheral components of the semiconductor component 45 are less likely to be damaged by light irradiation. From the same point of view, the transmittance of the support member 10 relative to incoherent light can be 60% or more or 70% or more, and can be 100% or less. The transmittance of the temporary fixing material layer 30 relative to incoherent light can be 3.0% or less, 2.5% or less, or 1.5% or less, and can be 0% or more.

[0036] The support member 10 is a plate-shaped body with high transmittance and capable of withstanding the loads subjected to during the processing of the semiconductor component 45. Examples of the support member 10 include inorganic glass substrates and transparent resin substrates.

[0037] The thickness of the support member 10 can be, for example, 0.1 mm to 2.0 mm. If the thickness of the support member 10 is 0.1 mm or more, operation tends to be easier. If the thickness of the support member 10 is 2.0 mm or less, material costs tend to be reduced.

[0038] The outermost surface S of the temporary fixing material layer 30, on the side where the semiconductor component 45 is temporarily fixed, is the surface of the curable resin layer 31. For example, by curing the curable resin layer 31 while the semiconductor component 45 is placed on it, the semiconductor component 45 can be temporarily fixed to the support member 10. In other words, the semiconductor component 45 can be temporarily bonded to the support member 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c.

[0039] The light-absorbing layer 32 is a layer that absorbs light and generates heat. By providing the light-absorbing layer 32, the temporary fixing material layer 30 can easily have low transmittance.

[0040] The curable resin layer 31 is a layer comprising a curable resin composition that is cured by heat or light. Before curing, the curable resin layer 31 has adhesiveness sufficient to allow the semiconductor component 45 to be attached by pressing or the like. The cured resin layer 31c retains the semiconductor component 45 during processing. In this specification, all components other than the conductive particles constituting the curable resin layer 31 are considered components of the curable resin composition.

[0041] From the viewpoint of stress relief, the thickness of the curable resin layer 31 may be, for example, less than 50 μm, less than 40 μm, or less than 30 μm and more than 0.1 μm, or less than 50 μm, less than 40 μm, or less than 30 μm and more than 1 μm.

[0042] The storage modulus of the cured resin layer 31c at 25°C can be 5 MPa to 100 MPa. If the storage modulus of the cured resin layer 31c at 25°C is 5 MPa or more, the semiconductor component 45 is easily held in place without causing the support component 10 to flex. Furthermore, when the semiconductor component 45 is separated from the support component, there is a tendency for the cured resin layer 31c to leave residue on the semiconductor component 45. If the storage modulus of the cured resin layer 31c at 25°C is 100 MPa or less, there is a tendency to reduce the positional displacement of the semiconductor component 45. Similarly, the storage modulus of the cured resin layer 31c at 25°C can be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and less than 100 MPa; it can also be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and less than 90 MPa; it can also be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and less than 80 MPa; it can also be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and less than 70 MPa; or it can also be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and less than 65 MPa. In this specification, the storage modulus of the cured resin layer 31c refers to the value obtained by viscoelastic measurement performed under conditions of a heating rate of 5°C / min, a frequency of 1 Hz, and tensile mode.

[0043] The storage modulus of the cured resin layer 31c at 25°C can be increased, for example, by increasing the content of the hydrocarbon resin (described later), using a hydrocarbon resin with high Tg, or adding insulating fillers to the cured resin composition.

[0044] The storage modulus of the cured resin layer 31c at 250°C can be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and less than 2.00 MPa; or it can be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and less than 1.90 MPa; or it can be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and less than 1.80 MPa; or it can be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and less than 1.75 MPa.

[0045] The curable resin composition constituting the curable resin layer 31 may contain a thermosetting resin and a hydrocarbon resin. The hydrocarbon resin is a resin whose main backbone contains hydrocarbons. If the curable resin composition contains a hydrocarbon resin, the semiconductor component 45 can be easily attached to the curable resin layer 31 at low temperatures.

[0046] From the viewpoint of the low-temperature adhesion of the curable resin layer 31, the glass transition temperature (Tg) of the hydrocarbon resin can be below 50°C. From the viewpoint of the good peelability of the curable resin layer 31, the Tg of the hydrocarbon resin can be above -100°C or above -50°C.

[0047] The Tg of a hydrocarbon resin is the glass transition temperature at the midpoint obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a hydrocarbon resin is the glass transition temperature at the midpoint calculated according to the method of Japanese Industrial Standards (JIS) K 7121, based on the heat change measured under conditions of a heating rate of 10 °C / min and a measurement temperature of -80 °C to 80 °C.

[0048] Hydrocarbon resins, for example, include those selected from ethylene-propylene copolymers, ethylene-1-butene copolymers, ethylene-propylene-1-butene copolymer elastomers, ethylene-1-hexene copolymers, ethylene-1-octene copolymers, ethylene-styrene copolymers, ethylene-norbornene copolymers, propylene-1-butene copolymers, ethylene-propylene-nonconjugated diene copolymers, ethylene-1-butene-nonconjugated diene copolymers, ethylene-propylene-1-butene-nonconjugated diene copolymers, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymers (SBS), styrene-isoprene-styrene block copolymers (SIS), styrene-ethylene-butylene-styrene block copolymers (SEBS), and styrene-ethylene-propylene-styrene block copolymers (SEBS). At least one of the groups consisting of styrene copolymers (SEPS) and their hydrides. These hydrocarbon resins may have carboxyl groups. Carboxyl groups are introduced, for example, by modification with maleic anhydride or the like. Hydrocarbon resins may also include styrene-based resins containing monomer units derived from styrene. Styrene-based resins may also be styrene-ethylene-butene-styrene block copolymers (SEBS).

[0049] The weight-average molecular weight (Mw) of the hydrocarbon resin can be between 10,000 and 5,000,000 or between 100,000 and 2,000,000. If the weight-average molecular weight is above 10,000, there is a tendency to easily ensure the heat resistance of the temporary fixing material layer 30. If the weight-average molecular weight is below 5,000,000, there is a tendency to easily suppress the decrease in flowability and adhesion of the temporary fixing material layer 30. The weight-average molecular weight here is a polystyrene conversion value obtained using gel permeation chromatography (GPC) and a standard curve using standard polystyrene.

[0050] Relative to 100 parts by mass of the total curable resin composition constituting the curable resin layer 31, the content of hydrocarbon resin can be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 90 parts by mass or less, or it can be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 85 parts by mass or less, or it can be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 80 parts by mass or less. If the content of hydrocarbon resin is within these ranges, there is a tendency to easily form a thin and flat curable resin layer 31. Furthermore, the curable resin layer 31 tends to have good adhesion at low temperatures and an appropriate storage modulus after curing.

[0051] Thermosetting resins are components that cure a curable resin composition through a thermosetting reaction. The thermosetting reaction can be a reaction between the thermosetting resin and a curing agent, the self-polymerization of the thermosetting resin, or a combination thereof. Examples of thermosetting resins include: epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These can be used alone or in combination of two or more. For superior heat resistance, workability, and reliability, thermosetting resins may include epoxy resins.

[0052] Epoxy resins are compounds having one or more epoxy groups. Epoxy resins may also have two or more epoxy groups. Examples of epoxy resins having two or more epoxy groups include: bisphenol A type epoxy resins, phenolic varnish type epoxy resins (such as phenolic varnish type epoxy resins), glycidylamine type epoxy resins, heterocyclic epoxy resins, and alicyclic epoxy resins.

[0053] The curable resin composition may contain a thermosetting resin and its curing agent. The total content of the thermosetting resin and its curing agent relative to 100 parts by mass of the total curable resin composition may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 60 parts by mass or less; it may also be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 50 parts by mass or less; or it may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 40 parts by mass or less. If the total content of the thermosetting resin and its curing agent is within these ranges, there is a tendency to easily form a thin and flat curable resin layer and for the cured resin layer 31c to have superior heat resistance.

[0054] When epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. There are no particular limitations on the curing agent for the epoxy resin; examples include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.), and phenolic resins (phenolic varnish resin, bisphenol A varnish resin, cresol varnish resin, phenolic aralkyl resin, etc.).

[0055] The thermosetting resin composition may further include a curing accelerator that promotes the curing reaction of thermosetting resins such as epoxy resins. Examples of curing accelerators include: imidazole compounds, dicyandiamide, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazolium-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These may be used alone or in combination of two or more.

[0056] The content of curing accelerator can be 0.01 to 5 parts by weight relative to 100 parts by weight of the total amount of thermosetting resin and curing agent. If the content of curing accelerator is within the range described above, the curability of the curable resin layer and the heat resistance after curing tend to be superior.

[0057] The curable resin composition constituting the curable resin layer 31 may include a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. In this case, the curable resin composition may further include the aforementioned hydrocarbon resin.

[0058] Polymerizable monomers are compounds having polymerizable unsaturated groups such as vinyl unsaturated groups. Polymerizable monomers can be monofunctional, difunctional, or trifunctional or higher, but from the viewpoint of obtaining sufficient curability, difunctional or higher polymerizable monomers can be used. Examples of polymerizable monomers include: (meth)acrylates, vinylidene halide, vinyl ethers, vinyl esters, vinylpyridine, vinylamides, and arylated vinyl groups. Polymerizable monomers can be (meth)acrylates or (meth)acrylic acid. (Meth)acrylates can also be monofunctional (meth)acrylates, difunctional (meth)acrylates, trifunctional or higher polyfunctional (meth)acrylates, or combinations thereof.

[0059] Examples of monofunctional (meth)acrylates include: methyl methacrylate, ethyl methacrylate, butyl methacrylate, isobutyl methacrylate, tert-butyl methacrylate, butoxyethyl methacrylate, isoamyl methacrylate, hexyl methacrylate, 2-ethylhexyl methacrylate, heptyl methacrylate, octylheptyl methacrylate, nonyl methacrylate, decyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 3-chloro-2-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, methoxy polyethylene glycol (meth)acrylate, ethoxy polyethylene glycol (meth)acrylate, methoxy polypropylene glycol (meth)acrylate, ethoxy polypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl) succinate. Aliphatic (meth)acrylates such as esters; and aromatic (meth)acrylates such as benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-isopropylphenylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthyl)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthyl)propyl (meth)acrylate.

[0060] Examples of difunctional (meth)acrylates include: ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, polyethylene glycol dimethacrylate, propylene glycol dimethacrylate, dipropylene glycol dimethacrylate, tripropylene glycol dimethacrylate, tetrapropylene glycol dimethacrylate, polypropylene glycol dimethacrylate, ethoxylated polypropylene glycol dimethacrylate, 1,3-butanediol dimethacrylate, 1,4-butanediol dimethacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol dimethacrylate, 1,6-hexanediol dimethacrylate, 2-butyl-2-ethyl-1,3-propanediol di(methacrylate) Aliphatic (meth)acrylates, such as 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerol di(meth)acrylate, tricyclodecanediethanol (meth)acrylate, and ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; and aromatic (meth)acrylates, such as ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene di(meth)acrylate, propoxylated fluorene di(meth)acrylate, and ethoxylated propoxylated fluorene di(meth)acrylate.

[0061] Examples of multifunctional (meth)acrylates with three or more functions include: trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate. Aliphatic (meth) acrylates, such as pentaerythritol tetra(meth) acrylate, ethoxylated pentaerythritol tetra(meth) acrylate, propoxylated pentaerythritol tetra(meth) acrylate, ethoxylated propoxylated pentaerythritol tetra(meth) acrylate, di-trimethylolpropane tetraacrylate and dipentaerythritol hexa(meth) acrylate; and aromatic epoxy (meth) acrylates, such as phenolic varnish epoxy (meth) acrylate and cresol phenolic varnish epoxy (meth) acrylate.

[0062] These (meth)acrylates can be used alone or in combination of two or more. They can also be combined with other polymerizable monomers.

[0063] The content of polymerizable monomers may be 10 to 60 parts by mass relative to 100 parts by mass of the curable resin composition constituting the curable resin layer 31.

[0064] A polymerization initiator is a compound that initiates the polymerization reaction of a polymerizable monomer by heating or irradiation with ultraviolet light. For example, when the polymerizable monomer is a compound having an vinyl unsaturated group, the polymerization initiator may be a thermal free radical polymerization initiator, a photofree radical polymerization initiator, or a combination thereof.

[0065] Examples of thermal free radical polymerization initiators include: diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; tert-butyl peroxide, tert-hexyl peroxide, 1,1,3,3-tetramethylbutyl peroxide-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, tert-hexyl peroxide-2-ethylhexanoate, tert-butyl peroxide-2-ethylhexanoate, tert-butyl peroxide isobutyrate, and tert-hexyl peroxide isopropyl monocarbonate. Peroxide esters, tert-butyl peroxide-3,5,5-trimethylhexanoate, tert-butyl peroxide laurate, tert-butyl peroxide isopropyl monocarbonate, tert-butyl peroxide-2-ethylhexyl monocarbonate, tert-butyl peroxide benzoate, tert-hexyl peroxide benzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, tert-butyl peroxide acetate and other peroxide esters; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylpentanitrile), 2,2'-azobis(4-methoxy-2'-dimethylpentanitrile).

[0066] Examples of photoradical polymerization initiators include: benzoin ketones such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxy ketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyl diphenylphosphine oxide.

[0067] These thermal free radical polymerization initiators and photofree radical polymerization initiators can be used alone or in combination of two or more.

[0068] The content of polymerization initiator can be 0.01 to 5 parts by mass relative to the total amount of polymerizable monomers (100 parts by mass).

[0069] The curable resin composition constituting the curable resin layer 31 may further include insulating fillers, sensitizers, antioxidants, etc., as other components.

[0070] Insulating fillers are added to impart low thermal expansion and low moisture absorption to the cured resin composition. Examples of insulating fillers include non-metallic inorganic fillers such as silica, alumina, boron nitride, titanium dioxide, glass, and ceramic. These insulating fillers can be used alone or in combination of two or more.

[0071] The content of insulating filler can be 5 to 20 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. If the content of insulating filler is within this range, the cured resin layer 31c tends to have excellent heat resistance and good peelability.

[0072] Examples of sensitizers include: anthracene, phenanthrene, 1,2-benzophenanthrene, benzopyrene, 1,2-fluoranthene, rubrene, pyrene, xanthone, indanthrin, thioxanthone-9-one, 2-isopropyl-9H-thioxanthone-9-one, 4-isopropyl-9H-thioxanthone-9-one, and 1-chloro-4-propoxythioxanthone. The content of the sensitizer may be 0.01 to 10 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0073] Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone; phenolic derivatives such as 4-methoxyphenol and 4-tert-butylcatechol; aminooxy derivatives such as 2,2,6,6-tetramethylpiperidin-1-oxy and 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxy; and hindered amine derivatives such as tetramethylpiperidin methacrylate. The antioxidant content may be 0.1 to 10 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0074] The curable resin layer 31 is formed on the light-absorbing layer 32, for example, by pre-preparing a laminated film having a support film and a curable resin layer formed on the support film and attaching it to the light-absorbing layer 32. The lamination of the laminated film to the light-absorbing layer 32 can be performed at room temperature (20°C) or while heated, using a roller laminator, vacuum laminator, or similar method. The laminated film having the support film and the curable resin layer can be obtained, for example, by applying a resin varnish containing a thermosetting resin or polymeric monomer, an organic solvent, and other components as needed to the support film; and then removing the organic solvent from the varnish. Alternatively, the curable resin layer 31 can be formed on the light-absorbing layer 32 by directly applying the same resin varnish to the light-absorbing layer 32 and then removing the organic solvent from the varnish.

[0075] One example of the light-absorbing layer 32 is a conductive layer containing a conductor that absorbs light and generates heat. Examples of the conductor constituting the conductive layer of the light-absorbing layer 32 include metals, metal oxides, and conductive carbon materials. The metal can be a single metal such as chromium, copper, titanium, silver, platinum, or gold, or an alloy such as nickel-chromium, stainless steel, or copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. These can be used alone or in combination. The conductor can be chromium, titanium, or conductive carbon materials.

[0076] The light-absorbing layer 32 can be a single or multiple metal layers. The metal layers typically have a transmittance of less than 3.1% relative to incoherent light. For example, the light-absorbing layer 32 can be a metal layer comprising copper and titanium layers. The metal layer as the light-absorbing layer 32 can be a layer formed by physical vapor deposition (PVD) such as vacuum evaporation and sputtering, or chemical vapor deposition (CVD) such as plasma chemical evaporation, or a plating layer formed by electrolytic plating or electroless plating. According to physical vapor deposition, even if the support member 10 has a large area, the metal layer as the light-absorbing layer 32 covering the surface of the support member 10 can be formed efficiently.

[0077] When the light-absorbing layer 32 is a single-layer metal layer, the light-absorbing layer 32 may contain at least one metal selected from the group consisting of thallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag) and gold (Au).

[0078] The light-absorbing layer 32 may also comprise a first layer and a second layer, stacked sequentially from the support member 10 side. In this case, for example, if the first layer has high light absorption and the second layer has a high coefficient of thermal expansion and a high elastic modulus, particularly good peelability can be easily obtained. From this perspective, for example, the first layer may comprise at least one metal selected from the group consisting of thallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer may comprise at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). Alternatively, the first layer may comprise at least one metal selected from the group consisting of titanium (Ti), tungsten (W), and chromium (Cr), and the second layer may comprise at least one metal selected from the group consisting of copper (Cu) and aluminum (Al).

[0079] Other examples of light-absorbing layers include layers containing conductive particles that absorb light and generate heat, and an adhesive resin in which the conductive particles are dispersed. The conductive particles may be particles containing the aforementioned conductors. The adhesive resin may be a curable resin composition, in which case the light-absorbing layer constitutes part of the curable resin layer 31. For example, Figure 1 (b) The light-absorbing layer 31B of the temporary fixing laminate 1 may be a layer comprising conductive particles and a curable resin composition. The curable resin composition constituting the light-absorbing layer may contain the same components as the curable resin composition constituting the portion of the curable resin layer other than the light-absorbing layer. The curable resin composition constituting the light-absorbing layer may be the same as or different from the curable resin composition constituting the portion of the curable resin layer other than the light-absorbing layer. The content of conductive particles in the light-absorbing layer may be 10 to 90 parts by mass relative to the total amount of components other than conductive particles in the light-absorbing layer, i.e., 100 parts by mass of the adhesive resin or the curable resin composition. If the content of conductive particles is high, the light-absorbing layer is likely to have a transmittance of less than 3.1% relative to incoherent light. From the viewpoint of transmittance, the content of conductive particles may also be 20% by mass or more, or 30% by mass or more.

[0080] A light-absorbing layer comprising conductive particles and an adhesive resin can be formed, for example, by applying a varnish containing conductive particles, an adhesive resin, and an organic solvent onto a support member or a curable resin layer; and removing the organic solvent using a self-coating film. A pre-fabricated light-absorbing layer 32 can be laminated onto the support member 10 or the curable resin layer. Alternatively, a laminate comprising the light-absorbing layer and the curable resin layer can be laminated onto the support member.

[0081] From the viewpoint of light peelability, the thickness of the light-absorbing layer 32 can be 1 nm to 5000 nm or 100 nm to 3000 nm. Furthermore, if the thickness of the light-absorbing layer 32 is 50 nm to 300 nm, the light-absorbing layer 32 easily exhibits sufficiently low transmittance. When the light-absorbing layer 32 comprises a single or multiple metal layers, from the viewpoint of good peelability, the thickness of the light-absorbing layer 32 (or the metal layer) can be 75 nm or more, 90 nm or more, or 100 nm or more, and can be less than 1000 nm. Especially when the light-absorbing layer 32 is a single metal layer, from the viewpoint of good peelability, the thickness of the light-absorbing layer 32 (or the metal layer) can be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, and can be less than 1000 nm. Even if the light-absorbing layer 32 is a metal layer containing a metal with low light absorption (e.g., Cu, Ni) or a metal layer containing a metal with a low coefficient of thermal expansion (e.g., Ti), if its thickness is large, it tends to have better peelability.

[0082] From the perspective of stress relief, the thickness of the temporary fixing material layer 30 ( Figure 1 In case (a), the total thickness of the light-absorbing layer 32 and the curable resin layer 31 can be 0.1 μm to 2000 μm or 10 μm to 500 μm.

[0083] After preparing the temporary fixation laminate 1, as follows Figure 3 (a) A semiconductor component 45, before processing, is placed on a curable resin layer 31 as shown. The semiconductor component 45 has a semiconductor substrate 40 and a rewiring layer 41. The semiconductor component 45 may further have external connection terminals. The semiconductor substrate 40 may be a semiconductor wafer or a semiconductor chip obtained by dicing a semiconductor wafer. Figure 3 In example (a), multiple semiconductor components 45 are placed on the curable resin layer 31, but the number of semiconductor components may also be one.

[0084] From the perspective of miniaturization and thinning of semiconductor devices, as well as suppressing breakage during transport and processing, the thickness of semiconductor component 45 can be 1μm to 1000μm, 10μm to 500μm, or 20μm to 200μm.

[0085] Semiconductor components 45, placed on the curable resin layer 31, are pressed onto the curable resin layer 31, for example, using a vacuum press or a vacuum laminator. When using a vacuum press, the pressing conditions can be: air pressure below 1 hPa, pressing pressure 1 MPa, pressing temperature 120°C to 200°C, and holding time 100 to 300 seconds. When using a vacuum laminator, the pressing conditions can be, for example,: air pressure below 1 hPa, pressing temperature 60°C to 180°C or 80°C to 150°C, lamination pressure 0.01 MPa to 0.5 MPa or 0.1 MPa to 0.5 MPa, and holding time 1 to 600 seconds or 30 to 300 seconds.

[0086] After the semiconductor component 45 is disposed on the curable resin layer 31, the curable resin layer 31 is heat-cured or photo-cured, thereby temporarily fixing the semiconductor component 45 to the support component 10 via a temporary fixing material layer 30 having the cured resin layer 31c. The heat curing conditions may be, for example, below 300°C or 100°C to 200°C, and for 1 minute to 180 minutes or 1 minute to 60 minutes.

[0087] Next, as Figure 4 As shown in (a), the semiconductor component temporarily fixed to the support member 10 is processed. Figure 4 (a) illustrates an example of a process involving the thinning of a semiconductor substrate. The processing of semiconductor components is not limited thereto, and may include, for example, the thinning of a semiconductor substrate, the dicing (cutting) of semiconductor components, the formation of through electrodes, etching processes, plating reflow processes, sputtering processes, or combinations thereof.

[0088] The semiconductor substrate 40 can be thinned by grinding the side of the semiconductor substrate 40 opposite to the rewiring layer 41 using a grinding machine or the like. The thickness of the thinned semiconductor substrate 40 can be, for example, 100 μm or less.

[0089] After processing the semiconductor component 45, such as Figure 4 (b) shows the formation of a sealing layer 50 that seals the processed semiconductor component 45. The sealing layer 50 can be formed using sealing materials commonly used in the manufacture of semiconductor devices. For example, the sealing layer 50 can be formed using a thermosetting resin composition. The thermosetting resin composition used in the sealing layer 50 may include, for example, epoxy resins such as cresol phenolic varnish epoxy resin, phenolic varnish epoxy resin, biphenyl epoxy resin, and naphthol phenolic varnish epoxy resin. The sealing layer 50 and the thermosetting resin composition used to form it may contain fillers and / or additives such as flame retardants.

[0090] The sealing layer 50 is formed, for example, using a solid material, liquid material, fine particulate material, or sealing film. When using a sealing film, a compression sealing molding machine, a vacuum lamination apparatus, or the like can be used. For example, using these apparatuses, the semiconductor component 45 is coated with a heat-melted sealing film at 40°C to 180°C (or 60°C to 150°C), 0.1 MPa to 10 MPa (or 0.5 MPa to 8 MPa), and for 0.5 minutes to 10 minutes, thereby forming the sealing layer 50. The thickness of the sealing film is adjusted such that the sealing layer 50 is greater than or equal to the thickness of the processed semiconductor component 45. The thickness of the sealing film can be 50 μm to 2000 μm, 70 μm to 1500 μm, or 100 μm to 1000 μm.

[0091] After the sealing layer 50 is formed, it can be as follows: Figure 5 As shown in (a), the sealing layer 50 and the curable resin layer 31c are divided into multiple portions, each containing a semiconductor component 45.

[0092] like Figure 5 As shown in (b), incoherent light A is irradiated onto the self-supporting member 10 side of the temporary fixing laminate 1, thereby separating the semiconductor member 45 from the supporting member 10. Upon irradiation with incoherent light A, the light-absorbing layer 32 absorbs the light and instantly generates heat. This heat can cause, for example, melting of the cured resin layer 31c, thermal stress between the supporting member 10 and the semiconductor member 45, and scattering of the light-absorbing layer 32. Due to one or more of these phenomena as the primary cause, the semiconductor member 45 can easily separate from the supporting member 10. If the cured resin composition constituting the cured resin layer 31 contains a hydrocarbon resin, and the storage modulus of the cured resin layer at 25°C is 5 MPa to 100 MPa, there is a tendency for the light-absorbing layer 32 to peel off from the cured resin layer 31 at the interface. The energy of the incoherent light A is 5 J / cm². 2 ~25J / cm 2 This tendency is particularly pronounced when the range is within a certain range. In order to separate the semiconductor component 45 from the support component 10, slight stress may also be applied to the semiconductor component 45 while irradiating it with incoherent light A.

[0093] Incoherent light A is incoherent light and is an electromagnetic wave with properties such as not producing interference fringes, low interferometry, and low directivity. Incoherent light tends to attenuate as its optical path length increases. Laser light is generally coherent light, while sunlight, fluorescent light, and other similar light sources are incoherent light. Incoherent light can also be referred to as light other than laser light. The illumination area of ​​incoherent light is generally much wider than that of coherent light (i.e., laser light), thus reducing the number of irradiations required. For example, multiple semiconductor components 45 can be separated with a single irradiation.

[0094] Incoherent light A may include infrared radiation. Incoherent light A may also be pulsed light. There are no particular limitations on the light source of incoherent light A; it can be a xenon lamp. A xenon lamp is a lamp that emits light by applying and discharging a light-emitting tube containing xenon gas. Xenon lamps repeatedly ionize and excite while discharging, thus stably possessing a continuous wavelength from the ultraviolet to the infrared region. Compared to lamps such as metal halide lamps, xenon lamps require less start-up time, thus significantly reducing process time. Furthermore, while high voltage is required during emission, resulting in instantaneous high heat, the cooling time is short, allowing for continuous operation; in this respect, xenon lamps are also advantageous.

[0095] The irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy, which can be arbitrarily set according to the number of irradiations. From the viewpoint of reducing damage to the semiconductor component 45, irradiation conditions can be set such that the semiconductor component 45 can be separated with a single irradiation.

[0096] On the separated semiconductor component 45, sometimes a portion of the cured resin layer 31c adheres as residue 31c'. For example... Figure 5 As shown in (c), the attached residue 31c' will be removed. The residue 31c' is removed, for example, by cleaning with a solvent. There are no particular limitations on the solvent; examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These can be used alone or in combination. To remove the residue 31c', the semiconductor component 45 can be immersed in the solvent or ultrasonically cleaned. Alternatively, the semiconductor component 45 can be heated at a low temperature of approximately 100°C or below.

[0097] By means of the methods described above, a semiconductor element 60 having a processed semiconductor component 45 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to other semiconductor elements or a substrate for mounting semiconductor elements.

[0098] Example

[0099] The present invention will be described in more detail below with reference to specific embodiments. However, the present invention is not limited to these embodiments.

[0100] (Study 1)

[0101] 1-1. Curing resin layer

[0102] Hydrogenated styrene-butadiene elastomer (trade name: Dynaron 2324P, JSR Corporation) was dissolved in toluene to prepare an elastomer solution with a concentration of 40% by mass. 80 parts by mass of the elastomer solution containing the hydrogenated styrene-butadiene elastomer, 20 parts by mass of 1,9-nonanediol diacrylate (trade name: FA-129AS, Hitachi Chemical Co., Ltd.), and 1 part by mass of peroxide ester (trade name: Perhexa 25O, Nippon Oil Co., Ltd.) were mixed to obtain a resin varnish.

[0103] Using a precision coating machine, the obtained resin varnish was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Film Co., Ltd., thickness: 38 μm). The coating was then dried by heating at 80°C for 10 minutes to form a cured resin layer with a thickness of approximately 100 μm.

[0104] 1-2. Light Absorption Layer

[0105] As supporting components, a glass slide, a frosted glass plate, and a silicon wafer with dimensions of 40mm × 40mm are prepared. On each supporting component, a titanium layer and a copper layer are sequentially formed by sputtering, thereby forming a light-absorbing layer comprising a titanium layer (thickness: 20nm) and a copper layer (thickness: 200nm). In the sputtering process, after pretreatment using reverse sputtering, the titanium and copper layers are formed by radio frequency (RF) sputtering. The conditions for reverse sputtering (pretreatment) and RF sputtering are described below.

[0106] Reverse sputtering (pretreatment)

[0107] Ar flow rate: 1.2 × 10 -2 Pa·m 3 / s(70sccm)

[0108] RF power: 300W

[0109] • Time: 300 seconds

[0110] RF sputtering

[0111] Ar flow rate: 1.2 × 10 -2 Pa·m 3 / s(70sccm)

[0112] 1-3. Transmittance

[0113] The transmittance of the support component and the light-absorbing layer relative to light irradiated by the xenon lamp was measured. The transmittance of the light-absorbing layer can be essentially considered as the transmittance of the temporary fixing material layer. The transmittance was measured using the same xenon lamp and spectrophotometer (USR-45, Ushio Electric Co., Ltd.) used in the peel test described later. The detection terminal of the spectrophotometer was positioned 5 cm away from the light irradiation area of ​​the xenon lamp. Light irradiated by the xenon lamp was directly detected through the detection terminal, and the amount of light detected was set as the baseline. Then, the test object was placed between the detection terminal of the spectrophotometer and the xenon lamp, and the transmitted light irradiated by the xenon lamp and transmitted through the test object was detected using the detection terminal. The ratio of the amount of transmitted light detected to the baseline was set as the transmittance. The transmittance, related to the total amount of light in the wavelength range of 300 nm to 800 nm, was calculated using the following formula.

[0114] Transmittance (%) = {(Total light intensity within the wavelength range of 300nm to 800nm ​​of transmitted light) / (Total light intensity within the wavelength range of 300nm to 800nm ​​of the baseline)} × 100

[0115] Regarding the light-absorbing layer, the transmittance of the laminate having the support member and the light-absorbing layer is measured using light from a xenon lamp disposed on the support member side. The amount of light incident on the light-absorbing layer is calculated based on the baseline and the transmittance of the support member, and the ratio of the amount of transmitted light to that amount of light is defined as the transmittance of the light-absorbing layer.

[0116] 1-4. Peel test

[0117] A 40mm × 40mm curable resin layer is cut and placed on the light-absorbing layer formed on each support component. The curable resin layer is then vacuum-laminated to adhere to the light-absorbing layer, thus obtaining a temporary fixing laminate consisting of a support component, a light-absorbing layer, and a curable resin layer. A semiconductor wafer (size: 10mm × 10mm, thickness: 150μm) is placed on the curable resin layer of the temporary fixing laminate. The curable resin layer is cured by heating at 180°C for 1 hour, thus obtaining a test specimen for a peel test with a semiconductor wafer temporarily fixed to the support component.

[0118] For each test specimen, pulsed light was applied from the support component side of the temporary fixation laminate using a xenon lamp. The irradiation conditions were as follows. The xenon lamp used was an S2300 manufactured by Xenon Corporation. The wavelength range of this device was 270 nm to the near-infrared region. The irradiation distance was the distance between the light source (xenon lamp) and the support component.

[0119] • Applied voltage: 3700V

[0120] • Pulse width: 200μs

[0121] • Irradiation distance: 50mm

[0122] Number of irradiations: 1 time

[0123] • Irradiation time: 200μs

[0124] After irradiation with a xenon lamp, the condition of the test specimens was observed, and the peelability was evaluated using the following criteria. The evaluation results are shown in Table 1.

[0125] A: The semiconductor wafer can be naturally peeled off from the temporary fixing laminate by light irradiation alone, or the semiconductor wafer can be peeled off from the temporary fixing laminate without damage by inserting tweezers between the semiconductor wafer and the curing resin layer.

[0126] B: Even with tweezers inserted between the semiconductor wafer and the curable resin layer, the semiconductor wafer was not peeled off from the temporary fixing laminate.

[0127] [Table 1]

[0128]

[0129] (Study 2)

[0130] As shown in Table 2, the thicknesses of the copper and titanium layers constituting the light-absorbing layer were varied. Otherwise, a test specimen with a glass slide as a support was fabricated using the same procedure as in "Study 1". In Comparative Example 3, no light-absorbing layer was provided; instead, a curable resin layer was directly laminated onto the support. In Comparative Example 4, only a titanium layer was formed as the light-absorbing layer. The peelability of the obtained test specimens was evaluated using the same peel test as in "Study 1". The transmittance of the light-absorbing layer was measured using the same method as in "Study 1". The evaluation results are shown in Table 2.

[0131] [Table 2]

[0132]

[0133] (Study 3)

[0134] On a 1300 μm thick glass slide serving as a support member, a light-absorbing layer comprising a single or two metal layers, as shown in Table 3, was formed by sputtering. In the table, the composition of the light-absorbing layer is indicated by the stacking order from the glass slide side; for example, "Ti(50) / Cu(200)" means that a 50 nm thick titanium layer and a 200 nm thick copper layer are stacked sequentially from the glass slide side. Examples 1, 3, and 4 are the same as Examples 1, 3, and 4 of Study 2. A temporary fixing laminate with a support member / light-absorbing layer / curable resin layer was fabricated on the light-absorbing layer using the same procedure as in Study 1. Furthermore, a test body for a peel test of a semiconductor wafer temporarily fixed to the support member was fabricated using the same procedure as in Study 1. The transmittance of the light-absorbing layer was measured using the same method as in Study 1.

[0135] Each prepared test specimen was irradiated with pulsed light using a xenon lamp from the support component side of the temporary fixing laminate. The irradiation conditions are as follows. A PulseForge 1300 manufactured by Novacentrix was used as the irradiation device equipped with a xenon lamp. The irradiation distance was the distance between the light source (xenon lamp) and the support component. The pulse width was increased by 10 μs increments starting from 150 μs, and the minimum pulse width was recorded when the semiconductor wafer naturally peeled off from the temporary fixing laminate solely through light irradiation. Irradiation with pulsed light was performed while changing test specimens, with each individual test specimen irradiated once. The minimum pulse width during semiconductor wafer peeling is shown in Table 3.

[0136] • Applied voltage: 800V

[0137] • Pulse width: 150μs~700μs

[0138] • Irradiation distance: 6mm

[0139] Number of irradiations: 1 time

[0140] Based on the minimum pulse width during semiconductor wafer stripping, stripping performance is evaluated using the following benchmarks.

[0141] AAA: 150μs

[0142] AA: ≥160μs and <350μs

[0143] A: 350μs or more but less than 700μs, or peeled off by dissolving the light-absorbing layer (A: Melt)

[0144] B: Not peelable below 700μs

[0145] [Table 3]

[0146]

[0147] Based on the results of Studies 1, 2 and 3, it can be confirmed that by using a temporary fixing laminate consisting of a support member with a transmittance of more than 90% and a light-absorbing layer with a transmittance of less than 3.1%, after the semiconductor component is temporarily fixed, it can be easily separated from the support member by irradiation with incoherent light from a xenon lamp.

[0148] Symbol Explanation

[0149] 1- Temporary fixing laminate, 10- Support component, 30- Temporary fixing material layer, 31- Curable resin layer, 31c- Cured resin layer, 32- Light absorption layer, 40- Semiconductor substrate, 41- Rewiring layer, 45- Semiconductor component, 50- Sealing layer, 60- Semiconductor element, S- Outermost surface of the temporary fixing material layer.

Claims

1. A method for manufacturing a semiconductor device, comprising, in sequence: A process for preparing a temporary fixation laminate, the temporary fixation laminate having a support member and a temporary fixation material layer disposed on the support member, the temporary fixation material layer having a curable resin layer, the curable resin layer including at least one outermost surface of the temporary fixation material layer. In the temporary fixing process, a semiconductor component having a semiconductor substrate and a redistribution layer disposed on one side of the semiconductor substrate is temporarily fixed to the support component via the temporary fixing material layer, with the redistribution layer facing the side of the curable resin layer. The processing step involves processing the semiconductor component that is temporarily fixed to the support component; as well as In the separation process, incoherent light is irradiated onto the temporary fixing laminate from the support member side, thereby separating the semiconductor component from the support member. Part or all of the temporary fixing material layer is a light-absorbing layer that absorbs light and generates heat. The light-absorbing layer is a layer provided as part of the curable resin layer, containing conductive particles that absorb light and generate heat, and an adhesive resin in which the conductive particles are dispersed, and the conductive particles contain metal; alternatively, the light-absorbing layer is a metal layer provided as a layer different from the curable resin layer. The incoherent light includes infrared radiation. The transmittance of the supporting component to the incoherent light is over 90%. The transmittance of the temporary fixing material layer to the incoherent light is less than 3.1%. The thickness of the light-absorbing layer is 50 nm to 300 nm.

2. The method according to claim 1, wherein, The source of the incoherent light is a xenon lamp.

3. The method according to claim 1, wherein, The transmittance of the metal layer to the incoherent light is less than 3.1%.

4. A light-absorbing laminate, comprising a support member and a light-absorbing layer disposed on the support member. The transmittance of the support component to incoherent light irradiated by the xenon lamp is over 90%. The light-absorbing layer is a metal layer, and the transmittance of the metal layer for incoherent light irradiated by the xenon lamp is less than 3.1%. The thickness of the light-absorbing layer is greater than 75 nm and less than 1000 nm.

5. The light-absorbing laminate according to claim 4, wherein, The thickness of the light-absorbing layer is greater than 90 nm and less than 1000 nm.

6. A temporary fixation laminate comprising the light-absorbing laminate of claim 4 or 5 and a curable resin layer. Starting from the support member side of the light-absorbing laminate, the metal layer and the curable resin layer of the light-absorbing laminate are sequentially stacked, thereby forming a temporary fixing material layer having the metal layer and the curable resin layer.

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