Power modules and electronic systems

Abstract

The embodiments disclose power modules and electronic systems. A power module includes: an embedded structure including an electrical insulator, a first terminal on a first side of the electrical insulator, and a second terminal on a second side of the electrical insulator opposite to the first side; a first semiconductor chip embedded in the electrical insulator and including a vertical low-side power transistor; and a second semiconductor chip contacting the first set of terminals on the first side of the electrical insulator and including a lateral high-side power transistor. The lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first conductive paths embedded in the electrical insulator to form a switching node of a half-bridge circuit. The switching node is electrically connected to a corresponding second terminal of the second terminal through one or more second conductive paths embedded in the electrical insulator.

Description

Technical Field

[0001] The embodiments disclosed herein generally relate to power modules and electronic systems. Background Technology

[0002] In synchronous buck converters, the driver, high-side power switch, and low-side power switch are typically configured as separate semiconductor dies (chips). In some cases, two power switches are connected together using one or two metal clips to form a half-bridge switching node. In others, bonding wires are used to form the switching node connection. The PWM (Pulse Width Modulation) controller is typically configured as an additional die, with the connection between the controller and driver implemented using metal traces and / or bonding wires on the circuit board. High-side current sensing is also used using bonding wires. Furthermore, connections from the driver die to the terminals of the high-side and low-side power switches are achieved using bonding wires or metal clips, along with the individual die pads supporting the power switches. This connection structure results in high parasitic inductance. Parasitic inductance slows down power-on speed, leading to lower power efficiency. Additionally, bonding wires are typically used for current / thermal monitoring, which introduces measurement inaccuracies. These factors degrade the high-frequency power efficiency and thermal performance of conventional power modules.

[0003] Therefore, power modules with improved high-frequency power efficiency and improved thermal performance are needed. Summary of the Invention

[0004] According to one embodiment of the power module, the power module includes: an embedded structure including an electrical insulator, a first terminal on a first side of the electrical insulator, and a second terminal on a second side of the electrical insulator opposite to the first side; a first semiconductor chip embedded in the electrical insulator and including a vertical low-side power transistor; and a second semiconductor chip contacting a first set of terminals on the first side of the electrical insulator and including a lateral high-side power transistor, wherein the lateral high-side power transistor is electrically connected to the vertical low-side power transistor through one or more first conductive paths embedded in the electrical insulator to form a switching node of a half-bridge circuit, wherein the switching node is electrically connected to a corresponding second terminal in the second terminal through one or more second conductive paths embedded in the electrical insulator.

[0005] According to one embodiment of the electronic system, the electronic system includes: a board; a load attached to the board; a power module configured to provide DC power to the load, and includes: an embedded structure including an electrical insulator, a first terminal on a first side of the electrical insulator, and a second terminal on a second side of the electrical insulator opposite to the first side, the second terminal contacting a corresponding board terminal of the board; a first semiconductor chip embedded in the electrical insulator and including a longitudinal low-side power transistor; and a second semiconductor chip contacting a first set of terminals on the first side of the electrical insulator and including a lateral high-side power transistor, wherein the lateral high-side power transistor is electrically connected to the longitudinal low-side power transistor through one or more first conductive paths embedded in the electrical insulator to form a switching node of a half-bridge circuit, the switching node being configured to supply an output voltage to the load, the switching node being electrically connected to a corresponding second terminal of the second terminal through one or more second conductive paths embedded in the electrical insulator; and a controller configured to control the operation of the power module and thereby regulate the DC power supplied to the load.

[0006] According to another embodiment of the power module, the power module includes: an embedded structure including an electrical insulator, a first set of terminals on a first side of the electrical insulator, and a second set of terminals on a second side of the electrical insulator opposite to the first side; a first semiconductor chip embedded in the electrical insulator and including a vertical low-side power transistor; and a second semiconductor chip attached to the first set of terminals on the first side of the electrical insulator and including a lateral high-side power transistor, wherein all signal I / O (input / output) connections and input power connections to the second semiconductor chip are provided by a subset of the second set of terminals on the second side of the electrical insulator and by conductive paths embedded in the electrical insulator, wherein the vertical low-side power transistor and the lateral high-side power transistor are electrically connected within the embedded structure to form a switching node of a half-bridge circuit, wherein one of the terminals included in the second set of terminals on the second side of the electrical insulator provides an external electrical contact for the switching node.

[0007] Other features and advantages will become apparent to those skilled in the art upon reading the following detailed description and viewing the accompanying drawings. Attached Figure Description

[0008] The elements in the accompanying drawings are not necessarily drawn to scale relative to each other. Similar reference numerals denote corresponding similar parts. Features of different illustrated embodiments can be combined unless they are mutually exclusive. Several embodiments are depicted in the drawings and are described in detail in the following description.

[0009] Figure 1 A cross-sectional view of one embodiment of the power module is shown.

[0010] Figure 2A schematic diagram of one embodiment of the power module is shown.

[0011] Figure 3 A schematic diagram of another embodiment of the power module is shown.

[0012] Figure 4 A schematic diagram of an embodiment of an electronic system including at least one power module is shown. Detailed Implementation

[0013] The described embodiment provides a power module comprising: a first semiconductor chip having a vertical low-side power transistor and embedded in an electrical insulator; and a second semiconductor chip having a lateral high-side power transistor and mounted to the electrical insulator in a flip-chip configuration to contact terminals at a first mounting side of the electrical insulator. The lateral high-side power transistor included in the first semiconductor chip is electrically connected via one or more conductive paths embedded in the electrical insulator to a switching node of a half-bridge circuit, formed by the vertical low-side power transistor included in the second semiconductor chip, without the need for bonding wires or metal clips. The switching node and the terminals of the semiconductor chips are electrically connected to corresponding terminals at a second mounting side of the electrical insulator, opposite to the first mounting side to which the second semiconductor chip is attached. Thus, the power module can be attached to another module, circuit board, etc., at the second mounting side of the electrical insulator. By eliminating bonding wires and metal clips between the first and second semiconductor chips, parasitic inductance is reduced, thereby improving the high-frequency power efficiency and thermal performance of the power module. Different embodiments of the power module and an electronic system including the power module are described below.

[0014] Figure 1 A cross-sectional view of an embodiment of a power module 100 is shown. The power module 100 includes: a first semiconductor chip (die) 102 having a vertical low-side power transistor 104 embedded in an electrical insulator 106; and a second semiconductor chip 108 having a lateral high-side power transistor 110 and mounted to the electrical insulator 106 in a flip-chip configuration to contact terminals 112, 114, 116, 118 located at a first mounting side 120 of the electrical insulator 106, without the need for bonding wires or metal clips. The vertical low-side power transistor 104 included in the first semiconductor chip 102 is a vertical device, wherein the primary current path of this device is between load terminals 122, 124 on opposite main sides of the first semiconductor chip 102. The lateral high-side power transistor 110 included in the second semiconductor chip 108 is a lateral device, wherein the main current path of the device is between the load terminals 126, 128 on the same main side of the second semiconductor chip 108, which is attached to the first mounting side 120 of the electrical insulator 106.

[0015] Electrical insulator 106 is part of embedded structure 130. Embedded structure 130 also includes first terminals 112, 114, 116, 118 at a first mounting side 120 of electrical insulator 106, and second terminals 132, 134, 136, 138, 140 at a second mounting side 142 of electrical insulator 106 opposite to the first mounting side 120. In one embodiment, the electrical insulator 106 of embedded structure 130 is a non-conductive substrate of a printed circuit board (PCB), and the non-conductive substrate has a cavity in which the first semiconductor chip 102 is disposed. The cavity may or may not be filled with an electrical insulating material, such as resin. The PCB may be a single-layer or multi-layer PCB. Typically, embedded structure 130 may be any type of structure having electrical insulator 106 and terminals 112-116, 132-140 located on opposite sides of electrical insulator 106, in which the first semiconductor chip 102 can be embedded. For example, the embedded structure 130 can be a laminate, QFM package, PCB, etc.

[0016] The lateral high-side power transistor 110, included in the second semiconductor chip 108 mounted to the embedded structure 130, is electrically connected to the longitudinal low-side power transistor 104 via one or more corresponding conductive paths 144, 146 also embedded in the electrical insulator 106. The longitudinal low-side power transistor 104 is included in the first semiconductor chip 102 embedded in the electrical insulator 106 of the embedded structure 130 to form the switching node (SW) of the half-bridge circuit, without the need for bonding wires or metal clips. The switching node connection formed between the chips 102, 108 within the electrical insulator 106 of the embedded structure 130 may include conductive vias 144 and / or one or more metal traces 146. The switching node of the half-bridge circuit is electrically connected to a corresponding terminal 140 at the second mounting side 142 of the embedded structure 130 via one or more corresponding conductive paths 146, 148 embedded in the electrical insulator 106. The embedded connection to the switch node terminal 140 at the second mounting side 142 of the embedded structure 130 may be formed by one or more metal traces 146 and / or conductive vias 148.

[0017] Figure 1 The upper right corner includes a circuit diagram of a half-bridge circuit formed by a vertical low-side power transistor 104 and a horizontal high-side power transistor 110. The vertical low-side power transistor 104 is included in a first semiconductor chip 102, and the horizontal high-side power transistor 110 is included in a second semiconductor chip 108. Transistor Q1 corresponds to the vertical low-side power transistor 104, and transistor Q2 corresponds to the horizontal high-side power transistor 110. The switching node formed by the coupling connection of semiconductor chips 102 and 108... Figure 1 It is marked as 'SW'. Figure 1 The diodes D1 and D2 shown in the schematic diagram can be monolithically integrated into the corresponding semiconductor chips 102 and 108, or they can be discrete components.

[0018] In one embodiment, the vertical low-side power transistor 104 included in the semiconductor chip 102 embedded in the embedded structure 130 is a vertical power MOSFET. The source and gate terminals 124, 150 of the vertical power MOSFET face the second mounting side 142 of the electrical insulator 106 and are electrically connected via corresponding conductive paths 152, 154 to corresponding terminals 136, 138 located on the second mounting side 142 of the electrical insulator 106. These conductive paths 152, 154 are embedded in the electrical insulator 106 between the first semiconductor chip 102 and the second mounting side 142 of the embedded structure 130. The corresponding connections between the source and gate terminals 124, 150 of the vertical power MOSFET and the corresponding terminals 136, 138 at the second mounting side 142 of the electrical insulator 106 can be formed by conductive vias 152, 154 embedded in the electrical insulator 106. The drain terminal 122 of the vertical power MOSFET faces the first mounting side 120 of the electrical insulator 106 and forms part of a half-bridge switching node.

[0019] The lateral high-side power transistor 110 included in the semiconductor chip 108 attached to the first mounting side 120 of the embedded structure 130 may be a lateral power MOSFET. The drain terminal 126 of the lateral power MOSFET faces the first mounting side 120 of the electrical insulator 106 and contacts a corresponding terminal 114 at the first mounting side 120. The terminal 114 at the first mounting side 120 of the electrical insulator 106 is electrically connected to a corresponding terminal 134 at the second mounting side 142 of the electrical insulator 106 via one or more conductive paths 156 (such as conductive vias and / or metal traces embedded in the electrical insulator 106).

[0020] The source terminal 128 of the lateral power MOSFET also faces the first mounting side 120 of the electrical insulator 106, forming part of a half-bridge switching node and contacting a corresponding terminal 116 of the embedded structure 130 at the first mounting side 120 of the electrical insulator 106. The source terminal 128 of the lateral power MOSFET is electrically connected to the drain terminal 122 of the longitudinal power MOSFET via corresponding conductive paths 144, 146 embedded in the electrical insulator 106 between the first semiconductor chip 102 and the first mounting side 120 of the electrical insulator 106, as previously explained herein. In one embodiment, the source terminal 128 of the lateral power MOSFET and the drain terminal 122 of the longitudinal power MOSFET at least partially overlap each other, as shown below. Figure 1As shown. However, this is only an example configuration. There may be partial or complete lateral overlap between the source terminal 128 of the lateral power MOSFET and the drain terminal 122 of the vertical power MOSFET, or there may be no lateral overlap at all.

[0021] The second semiconductor chip 108, attached to the first mounting side 120 of the embedded structure 130, may further include a low-side gate terminal 158 facing the first mounting side 120 of the electrical insulator 106 and electrically connected to the gate terminal 150 of the first semiconductor chip 102 embedded in the electrical insulator 106. For example, the second semiconductor chip 108 may include optional additional circuitry 160, which may include a gate driver for power transistors 104, 110 included in one or both of the first and second semiconductor chips 102, 108. In this example, the connection to the gate (G_HS) of the lateral high-side power transistor 110 included in the second semiconductor chip 108 is internal to the second semiconductor chip 108 because the gate driver is monolithically integrated within the second semiconductor chip 108. Control signals from the gate driver to the longitudinal low-side power transistor 104 included in the first semiconductor chip 102 can be output at the low-side gate terminal 158 of the second semiconductor chip 108 and transmitted to the gate terminal 150 of the first semiconductor chip 102 through corresponding conductive paths 154, 160 and corresponding terminals 118, 138. The conductive paths 154, 160 are embedded in the electrical insulator 106, and the corresponding terminals 118, 138 are located at opposite mounting sides 120, 142 of the embedded structure 130.

[0022] The second semiconductor chip 108 may include a signal I / O terminal 162 on the same side as the other terminals 126, 128, 158. The signal I / O terminal 162 can be used to send and receive control signals, telemetry information, etc. For example, such a signal could be a PWM signal used to control a gate driver monolithically integrated in the second semiconductor chip 108. The signal I / O terminal 162 of the second semiconductor chip 108 contacts a corresponding signal I / O terminal 112 at the first mounting side 120 of the embedded structure 130. The signal I / O terminal 112 at the first mounting side 120 of the embedded structure 130 is electrically connected to the corresponding signal I / O terminal 132 at the second mounting side 142 of the embedded structure 130 via a corresponding conductive path 164 (such as a conductive via and / or metal trace embedded in the electrical insulator 106). In one embodiment, all signal I / O (input / output) connections and input power connections to the second semiconductor chip 108 are provided by a subset 132, 134 of terminals 132, 134, 136, 138 at the second mounting side 142 of the electrical insulator 106 and by corresponding conductive paths 156, 164 embedded in the electrical insulator 106. Another terminal 140 at the second mounting side 142 of the electrical insulator 106 provides an external electrical contact for a switching node formed by power transistors 104, 110 included in the first and second semiconductor chips 102, 108.

[0023] If the gate driver of the power transistor 104 included in the first semiconductor chip 102 is not monolithically integrated with the lateral high-side power transistor 110 in the second semiconductor chip 108, the control signal of the vertical low-side power transistor 104 included in the first semiconductor chip 102 can be transmitted by an external driver IC or other die via the corresponding terminal 138 at the second mounting side 142 of the electrical insulator 106.

[0024] As explained above, the optional additional circuitry 160 included in the semiconductor chip 108 of the embedded structure 130, which is attached to the first mounting side 120 of the electrical insulator 106, may include driver circuitry for one or both of the power transistors 104, 110, which are included in the first and second semiconductor chips 102, 108.

[0025] Figure 2A schematic diagram of an embodiment of power module 100 is shown, and according to this embodiment, optional additional circuitry 160 attached to a semiconductor chip 108 at a first mounting side 120 of an electrical insulator 106 to an embedded structure 130 includes a first driver circuitry 200 monolithically integrated with a lateral high-side power transistor 110. The first driver circuitry 200 is configured to drive a control terminal G_HS of the lateral high-side power transistor 110 in response to a high-side gate drive signal HS. The high-side gate drive signal HS may be generated by driver and sensing logic 202 included in the optional additional circuitry 160 of the second semiconductor chip 108. For example, a PWM control signal may be received at one of the signal I / O terminals 132 of the power module 100, and the driver and sensing logic 202 may generate the high-side gate drive signal HS based on the duty cycle of the received PWM signal. The power module 100 may include a separate ground / reference terminal 204 for the driver and sensing logic 202.

[0026] Optional additional circuitry 160, attached to the semiconductor chip 108 at the first mounting side 120 of the electrical insulator 106 and embedded in the embedding structure 130, may further include a second driver circuit 206 monolithically integrated with the first driver circuit 200, driver and sensing logic 202, and lateral high-side power transistor 110. The second driver circuit 206 is configured to drive the control terminal G_LS of the longitudinal low-side power transistor 104, which is included in the semiconductor chip 102 embedded in the embedding structure 130 of the power module 100. For this purpose, the second driver circuit 206 is electrically connected to the control terminal G_LS of the longitudinal low-side power transistor 104 via corresponding terminals 118, 138 and one or more conductive paths 154, 160. Terminals 118, 138 are located on opposite sides 120, 142 of the embedded structure 130. One or more conductive paths 154, 160 are embedded in the electrical insulator 106 of the embedded structure 130 and connected to the relatively positioned terminals 118, 138 of the embedded structure 130.

[0027] The second driver circuit 206, in response to the low-side gate drive signal LS, drives the control terminal G_LS of the vertical low-side power transistor 104 included in the semiconductor chip 102 embedded in the embedded structure 130. The low-side gate drive signal LS may be generated by driver and sensing logic 202 included in optional additional circuitry 160 of the second semiconductor chip 108. For example, the driver and sensing logic 202 may generate the low-side gate drive signal LS based on the duty cycle of a PWM signal received at one of the signal I / O terminals 132 of the power module 100. In addition to generating the gate drive signals HS and LS, the driver and sensing logic 202 may also include circuitry for sensing the current and / or temperature of the second semiconductor chip 108 and reporting relevant telemetry information via one or more I / O terminals of the signal I / O terminals 132 of the power module 100.

[0028] Figure 3 A schematic diagram of an embodiment of a power module 100 is shown, according to which optional additional circuitry 160, attached to a semiconductor chip 108 embedded in an embedded structure 130 at a first mounting side 120 of an electrical insulator 106, includes, as shown in the diagram. Figure 2 The first and second driver circuits 200, 206 and driver and sensing logic 202 shown are included, as well as a modulator 300 monolithically integrated with the driver circuits 200, 206, driver and sensing logic 202, and lateral high-side power transistor 110. The modulator 300 generates a modulation signal for controlling the switching of the lateral high-side power transistor 110 and the longitudinal low-side power transistor 104. The modulator 300 is electrically connected to the first driver circuit 200 and the second driver circuit 206 within the second semiconductor chip 108. In one embodiment, the modulator 300 is a PWM modulator that generates a PWM signal for controlling the on and off durations of the power transistors 104, 110 included in the first and second semiconductor chips 102, 108 to regulate the voltage at the switching node terminal 140 of the power module 100.

[0029] The modulator 300 can be implemented as a controller, which, together with the first and second driver circuits 200, 206, driver and sensing logic 202, and power transistors 104, 110, forms a power converter or voltage regulator (VR). Alternatively, the controller and / or driver functions can be implemented externally to the power module 100. For example, a processor supplying current to the half-bridge circuit formed via power transistors 104, 110 can provide VR control functions to the power module 100, thereby eliminating the need for a separate VR controller. The driver circuits 200 / 206 for one or both of the power transistors 104, 110 can also be located externally to the power module 100. Various passive components constituting the power converter or voltage regulator (such as capacitors and / or inductors) can be included in the power module 100, surface-mounted to the power module 100, located on a separate board, etc.

[0030] Figure 4 A schematic diagram of an embodiment of an electronic system 400 including at least one power module 100 is shown. The electronic system 400 also includes a board 402 and at least one load 404 attached to the board 402. In one embodiment, the load 404 is a processor subsystem that may include one or more processors and associated memory. As used herein, the term "processor" refers to electronic circuitry that performs operations on an external data source, such as memory or some other data stream. The term "processor" as used herein includes CPUs, microprocessors, GPUs, DSPs, image processors, network or packet processors, coprocessors, multi-core processors, front-end processors, baseband processors, etc. The type of processor depends on the electronic system 400. For example, in the case of a computer, server, mobile device, etc., the load 404 may be a CPU, microprocessor, coprocessor, multi-core processor, front-end processor, etc. In the case of a network interface that manages the radio functions of a wireless network, the load 404 may be a baseband processor. In the case of a graphics card, the load 404 may be a GPU or image processor. In the case of a network interface card, the load 404 may be a network or packet processor. These are merely some examples of electronic systems and related loads and should not be considered limiting.

[0031] At least one instance of power module 100 is attached to system board 100 and configured to provide DC power to load 404. For example, in the case of multiphase VR, at least two power modules 100 may be attached to system board 100, wherein each power module 100 provides one phase current to load 404. Individual phases can be enabled and disabled at different operating points depending on load requirements. Each power module 100 attached to system board 100 has the construction and function previously described herein. Thus, each power module 100 attached to system board 100 provides a switching node (SW) of a half-bridge circuit for supplying output voltage to load 404.

[0032] exist Figure 4 In the top view, the semiconductor chip 102 embedded in the embedding structure 130 of each power module 100 is out of view. The same is true for the switch node (SW) terminal 140 at the second mounting side 142 of the embedding structure 130 of each power module 100. Figure 4 The image is shown as a dashed box. Figure 4 All other components of the power module 100 outside the mid-field view are not shown to provide an unobstructed view of the other components of the electronic system 400. Terminals 132, 134, 136, 138, 140 at the second mounting side 142 of the embedded structure 130 of each power module 100 contact corresponding terminals, traces, bonding pads, etc. at the facing side 406 of the system board.

[0033] The electronic system 400 may also include a separate controller 408 for controlling the operation of each power module 100 attached to the system board 402, thereby regulating the DC power supplied to the load 404. Communication between the controller 408 and each power module 100 attached to the system board 402 is... Figure 4 It is shown using a dashed line with an arrow.

[0034] As previously described herein, alternatively, the power module control functions can be monolithically integrated into each semiconductor chip 108 including the lateral high-side power transistor 110, or, if the load 404 is a processor, can be executed by the load 404. The connection between the switching node terminal 140 of each power module 100 attached to the system board 402 and the load 404 is... Figure 4Simplified representations are shown as corresponding solid lines. However, additional components may be present in the electrical path between each switching node terminal 140 and the load 404. For example, inductors, capacitors, filters, etc., may be coupled in the electrical path between the switching node terminal 140 and the load 404. In the case of a buck converter, the power transistors 104, 110 of the power module 100 are electrically connected in a half-bridge configuration at the switching node terminal 140, which is electrically connected to a single-phase output inductor (not shown). The output inductor provides phase current to the load 404.

[0035] In one embodiment, power transistors 104, 110 of each power module 100 attached to system board 402 form a non-isolated point-of-load power converter configured to accept power input from an isolated DC-DC converter (not shown) and provide DC power to a load 404 in close proximity.

[0036] Although this disclosure is not limited thereto, the examples numbered below illustrate one or more aspects of this disclosure.

[0037] Example 1. A power module comprising: an embedded structure including an electrical insulator, a first terminal on a first side of the electrical insulator, and a second terminal on a second side of the electrical insulator opposite to the first side; a first semiconductor chip embedded in the electrical insulator and including a longitudinal low-side power transistor; and a second semiconductor chip contacting a first set of terminals on the first side of the electrical insulator and including a lateral high-side power transistor, wherein the lateral high-side power transistor is electrically connected to the longitudinal low-side power transistor via one or more first conductive paths embedded in the electrical insulator to form a switching node of a half-bridge circuit, wherein the switching node is electrically connected to a corresponding second terminal in the second terminal via one or more second conductive paths embedded in the electrical insulator.

[0038] Example 2. The power module according to Example 1, wherein the second semiconductor chip further includes a first driver circuit, the first driver circuit being monolithically integrated with the lateral high-side power transistor and configured to drive the control terminal of the lateral high-side power transistor.

[0039] Example 3. The power module according to Example 2, wherein the second semiconductor chip further includes a second driver circuit, the second driver circuit being monolithically integrated with the first driver circuit and the lateral high-side power transistor and configured to drive the control terminal of the longitudinal low-side power transistor, and wherein the second driver circuit is electrically connected to the control terminal of the longitudinal low-side power transistor through one or more fourth conductive paths embedded in an electrical insulator.

[0040] Example 4. The power module according to Example 3, wherein the second semiconductor chip further includes a modulator, the modulator being monolithically integrated with a first driver circuit, a second driver circuit, and a lateral high-side power transistor and configured to generate a modulated signal for controlling the switching of the lateral high-side power transistor and the longitudinal low-side power transistor, and wherein the modulator is electrically connected to the first driver circuit and the second driver circuit within the second semiconductor chip.

[0041] Example 5. A power module according to any of Examples 1 to 4, wherein the vertical low-side power transistor is a vertical power MOSFET, wherein the gate terminal and source terminal of the vertical power MOSFET face the second side of an electrical insulator and are electrically connected to a corresponding second terminal in the second terminal via respective conductive paths, the respective conductive paths being embedded in the electrical insulator and located between the first semiconductor chip and the second side of the electrical insulator, and wherein the drain terminal of the vertical power MOSFET faces the first side of the electrical insulator and forms part of a switching node.

[0042] Example 6. According to the power module of Example 5, wherein the lateral high-side power transistor is a lateral power MOSFET, wherein the gate terminal and drain terminal of the lateral power MOSFET face the first side of the electrical insulator and contact the corresponding first terminal in the first terminal, and wherein the source terminal of the lateral power MOSFET faces the first side of the electrical insulator, forming part of a switching node, and is electrically connected to the drain terminal of the longitudinal power MOSFET through respective conductive paths, the respective conductive paths being embedded in the electrical insulator and located between the first semiconductor chip and the first side of the electrical insulator.

[0043] Example 7. A power module according to Example 6, wherein the source terminal of the lateral power MOSFET and the drain terminal of the longitudinal power MOSFET at least partially overlap each other.

[0044] Example 8. A power module according to any of Examples 1 to 7, wherein the electrical insulator of the embedded structure is a non-conductive substrate of a printed circuit board, wherein the non-conductive substrate has a cavity, and wherein a first semiconductor chip is disposed in the cavity.

[0045] Example 9. A power module according to any of Examples 1 to 8, wherein a first semiconductor chip and a second semiconductor chip form a non-isolated point-of-load power converter, the non-isolated point-of-load power converter being configured to accept power input from an isolated DC-DC converter and provide DC power to a load closely located on the load.

[0046] Example 10. A power module according to any of Examples 1 to 9, wherein a first terminal is electrically connected to a corresponding second terminal in a second terminal via a third conductive path embedded in an electrical insulator.

[0047] Example 11. An electronic system comprising: a board; a load attached to the board; a power module configured to provide DC power to the load, and including: an embedded structure including an electrical insulator, a first terminal at a first side of the electrical insulator and a second terminal at a second side of the electrical insulator opposite to the first side, the second terminal contacting a corresponding board terminal of the board; a first semiconductor chip embedded in the electrical insulator and including a longitudinal low-side power transistor; and a second semiconductor chip contacting a first set of terminals at the first side of the electrical insulator and including a lateral high-side power transistor, wherein the lateral high-side power transistor is electrically connected to the longitudinal low-side power transistor via one or more first conductive paths embedded in the electrical insulator to form a switching node of a half-bridge circuit, the switching node being configured to supply an output voltage to the load, the switching node being electrically connected to a corresponding second terminal of the second terminal via one or more second conductive paths embedded in the electrical insulator; and a controller configured to control the operation of the power module and thereby regulate the DC power supplied to the load.

[0048] Example 12. The electronic system according to Example 11, wherein the second semiconductor chip further includes a first driver circuit, the first driver circuit being monolithically integrated with the lateral high-side power transistor and configured to drive the control terminals of the lateral high-side power transistor.

[0049] Example 13. The electronic system according to Example 12, wherein the second semiconductor chip further includes a second driver circuit, the second driver circuit being monolithically integrated with the first driver circuit and the lateral high-side power transistor, and configured to drive the control terminal of the longitudinal low-side power transistor, and wherein the second driver circuit is electrically connected to the control terminal of the longitudinal low-side power transistor via one or more fourth conductive paths embedded in an electrical insulator.

[0050] Example 14. An electronic system according to Example 13, wherein the second semiconductor chip further includes a modulator monolithically integrated with a first driver circuit, a second driver circuit, and a lateral high-side power transistor and configured to generate a modulated signal for controlling the switching of the lateral high-side power transistor and the longitudinal low-side power transistor, and wherein the modulator is electrically connected to the first driver circuit and the second driver circuit within the second semiconductor chip.

[0051] Example 15. An electronic system according to Example 14, wherein the second semiconductor chip further includes a controller that is monolithically integrated with a modulator, a first driver circuit, a second driver circuit, and a lateral high-side power transistor.

[0052] Example 16. An electronic system according to any of Examples 11 to 15, wherein the longitudinal low-side power transistor is a longitudinal power MOSFET, wherein the gate terminal and source terminal of the longitudinal power MOSFET face the second side of an electrical insulator and are electrically connected to corresponding second terminals in the second terminals via respective conductive paths, the respective conductive paths being embedded in the electrical insulator and located between the first semiconductor chip and the second side of the electrical insulator, and wherein the drain terminal of the longitudinal MOSFET faces the first side of the electrical insulator and forms part of a switching node.

[0053] Example 17. An electronic system according to Example 16, wherein the lateral high-side power transistor is a lateral power MOSFET, wherein the gate terminal and drain terminal of the lateral power MOSFET face the first side of the electrical insulator and contact the respective first terminal in the first terminal, and wherein the source terminal of the lateral power MOSFET faces the first side of the electrical insulator, forming part of a switching node, and is electrically connected to the drain terminal of the longitudinal power MOSFET through respective conductive paths, the respective conductive paths being embedded in the electrical insulator and located between the first semiconductor chip and the first side of the electrical insulator.

[0054] Example 18. An electronic system according to Example 17, wherein the source terminal of the lateral power MOSFET and the drain terminal of the longitudinal power MOSFET at least partially overlap each other.

[0055] Example 19. An electronic system according to any of Examples 11 to 18, wherein the electrical insulator of the embedded structure is a non-conductive substrate of a printed circuit board, wherein the non-conductive substrate has a cavity, and wherein a first semiconductor chip is disposed in the cavity.

[0056] Example 20. An electronic system according to any of Examples 11 to 19, wherein a first semiconductor chip and a second semiconductor chip form a non-isolated point-of-load power converter, the non-isolated point-of-load power converter being configured to accept power input from an isolated DC-DC converter and provide DC power to the load.

[0057] Example 21. An electronic system according to any of Examples 11 to 20, wherein a first terminal is electrically connected to a corresponding second terminal in a second terminal via a third conductive path embedded in an electrical insulator.

[0058] Example 22. A power module comprising: an embedded structure including an electrical insulator, a first set of terminals on a first side of the electrical insulator, and a second set of terminals on a second side of the electrical insulator opposite to the first side; a first semiconductor chip embedded in the electrical insulator and including a longitudinal low-side power transistor; and a second semiconductor chip attached to the first set of terminals on the first side of the electrical insulator and including a lateral high-side power transistor, wherein all signal I / O connections and input power connections to the second semiconductor chip are provided by a subset of the second set of terminals on the second side of the electrical insulator and by conductive paths embedded in the electrical insulator, wherein the longitudinal low-side power transistor and the lateral high-side power transistor are electrically connected within the embedded structure to form a switching node of a half-bridge circuit, including terminals in the second set of terminals on the second side of the electrical insulator providing external electrical contacts for the switching node.

[0059] Example 23. According to the power module shown in Example 22, the second semiconductor chip further includes driver circuitry for the lateral high-side power transistor.

[0060] Terms such as "first," "second," etc., are used to describe various elements, regions, parts, etc., and are not intended to be limiting. Throughout this specification, the same terms refer to the same elements.

[0061] As used herein, the terms “having,” “containing,” “including,” “comprising,” etc., are open-ended terms indicating the presence of the stated element or feature but not excluding other elements or features. The articles “a” and “the” are intended to include both plural and singular forms unless the context clearly indicates otherwise.

[0062] It should be understood that, unless otherwise specifically stated, the features of the various embodiments described herein can be combined with each other.

[0063] While specific embodiments have been shown and described herein, those skilled in the art will understand that various alternatives and / or equivalent implementations may be made in place of the specific embodiments shown and described without departing from the scope of the invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is defined only by the claims and their equivalents.

Claims

1. A power module, comprising: An embedded structure includes: an electrical insulator; a first terminal on a first side of the electrical insulator; and a second terminal on a second side of the electrical insulator opposite to the first side. A first semiconductor chip, embedded in the electrical insulator, includes a vertically oriented low-side power transistor; and A second semiconductor chip, in contact with a first set of terminals on the first side of the electrical insulator, and including a lateral high-side power transistor. The lateral high-side power transistor is electrically connected to the longitudinal low-side power transistor via one or more first conductive paths embedded in the electrical insulator to form the switching node of the half-bridge circuit. The switching node is electrically connected to a corresponding second terminal in the second terminal through one or more second conductive paths embedded in the electrical insulator; The vertical low-side power transistor is a vertical power MOSFET, wherein the gate terminal and source terminal of the vertical power MOSFET face the second side of the electrical insulator and are electrically connected to a corresponding second terminal in the second terminal through respective conductive paths, the respective conductive paths being embedded in the electrical insulator and located between the first semiconductor chip and the second side of the electrical insulator, and wherein the drain terminal of the vertical power MOSFET faces the first side of the electrical insulator and forms part of the switching node; The lateral high-side power transistor is a lateral power MOSFET, wherein the gate and drain terminals of the lateral power MOSFET face the first side of the electrical insulator and contact a corresponding first terminal among the first terminals, and wherein the source terminal of the lateral power MOSFET faces the first side of the electrical insulator, forming part of the switching node, and is electrically connected to the drain terminal of the longitudinal power MOSFET through respective conductive paths embedded in the electrical insulator and located between the first semiconductor chip and the first side of the electrical insulator; and The source terminal of the lateral power MOSFET and the drain terminal of the vertical power MOSFET at least partially overlap each other; and the gate terminal and drain terminal of the lateral power MOSFET do not overlap with the first semiconductor chip.

2. The power module of claim 1, wherein the second semiconductor chip further includes a first driver circuit, the first driver circuit being monolithically integrated with the lateral high-side power transistor and configured to drive the control terminal of the lateral high-side power transistor.

3. The power module of claim 2, wherein the second semiconductor chip further includes a second driver circuit, the second driver circuit being monolithically integrated with the first driver circuit and the lateral high-side power transistor and configured to drive the control terminal of the longitudinal low-side power transistor, and wherein the second driver circuit is electrically connected to the control terminal of the longitudinal low-side power transistor via one or more fourth conductive paths embedded in the electrical insulator.

4. The power module of claim 3, wherein the second semiconductor chip further includes a modulator, the modulator being monolithically integrated with the first driver circuit, the second driver circuit, and the lateral high-side power transistor, and configured to generate a modulation signal for controlling the switching of the lateral high-side power transistor and the longitudinal low-side power transistor, and wherein the modulator is electrically connected to the first driver circuit and the second driver circuit within the second semiconductor chip.

5. The power module of claim 1, wherein the electrical insulator of the embedded structure is a non-conductive substrate of a printed circuit board, wherein the non-conductive substrate has a cavity, and wherein the first semiconductor chip is disposed in the cavity.

6. The power module of claim 1, wherein the first semiconductor chip and the second semiconductor chip form a non-isolated point-of-load power converter, the non-isolated point-of-load power converter being configured to accept power input from an isolated DC-DC converter and provide DC power to a load closely located on the load.

7. The power module of claim 1, wherein the first terminal is electrically connected to a corresponding second terminal of the second terminal via a third conductive path embedded in the electrical insulator.

8. An electronic system comprising: plate; The load is attached to the plate; A power module, configured to provide DC power to the load, and includes: An embedded structure includes: an electrical insulator; a first terminal on a first side of the electrical insulator; and a second terminal on a second side of the electrical insulator opposite to the first side, the second terminal contacting a corresponding plate terminal of the plate; A first semiconductor chip, embedded in the electrical insulator, includes a vertically oriented low-side power transistor; and A second semiconductor chip, in contact with a first set of terminals on the first side of the electrical insulator, and including a lateral high-side power transistor. The lateral high-side power transistor is electrically connected to the longitudinal low-side power transistor via one or more first conductive paths embedded in the electrical insulator to form a switching node of a half-bridge circuit. The switching node is configured to supply an output voltage to the load. The switching node is also electrically connected to a corresponding second terminal in the second terminal via one or more second conductive paths embedded in the electrical insulator. A controller is configured to control the operation of the power module and thereby regulate the DC power supplied to the load; The vertical low-side power transistor is a vertical power MOSFET, wherein the gate terminal and source terminal of the vertical power MOSFET face the second side of the electrical insulator and are electrically connected to a corresponding second terminal in the second terminal through respective conductive paths, the respective conductive paths being embedded in the electrical insulator and located between the first semiconductor chip and the second side of the electrical insulator, and wherein the drain terminal of the vertical power MOSFET faces the first side of the electrical insulator and forms part of the switching node; The lateral high-side power transistor is a lateral power MOSFET, wherein the gate and drain terminals of the lateral power MOSFET face the first side of the electrical insulator and contact a corresponding first terminal among the first terminals, and wherein the source terminal of the lateral power MOSFET faces the first side of the electrical insulator, forming part of the switching node, and is electrically connected to the drain terminal of the longitudinal power MOSFET through respective conductive paths embedded in the electrical insulator and located between the first semiconductor chip and the first side of the electrical insulator; and The source terminal of the lateral power MOSFET and the drain terminal of the vertical power MOSFET at least partially overlap each other; and the gate terminal and drain terminal of the lateral power MOSFET do not overlap with the first semiconductor chip.

9. The electronic system of claim 8, wherein the second semiconductor chip further includes a first driver circuit, the first driver circuit being monolithically integrated with the lateral high-side power transistor and configured to drive the control terminal of the lateral high-side power transistor.

10. The electronic system of claim 9, wherein the second semiconductor chip further includes a second driver circuit, the second driver circuit being monolithically integrated with the first driver circuit and the lateral high-side power transistor and configured to drive a control terminal of the longitudinal low-side power transistor, and wherein the second driver circuit is electrically connected to the control terminal of the longitudinal low-side power transistor via one or more fourth conductive paths embedded in the electrical insulator.

11. The electronic system of claim 10, wherein the second semiconductor chip further includes a modulator, the modulator being monolithically integrated with the first driver circuit, the second driver circuit, and the lateral high-side power transistor, and configured to generate a modulation signal for controlling the switching of the lateral high-side power transistor and the longitudinal low-side power transistor, and wherein the modulator is electrically connected to the first driver circuit and the second driver circuit within the second semiconductor chip.

12. The electronic system of claim 11, wherein the second semiconductor chip further includes the controller, the controller being monolithically integrated with the modulator, the first driver circuit, the second driver circuit, and the lateral high-side power transistor.

13. The electronic system of claim 8, wherein the electrical insulator of the embedded structure is a non-conductive substrate of a printed circuit board, wherein the non-conductive substrate has a cavity, and wherein the first semiconductor chip is disposed in the cavity.

14. The electronic system of claim 8, wherein the first semiconductor chip and the second semiconductor chip form a non-isolated point-of-load power converter, the non-isolated point-of-load power converter being configured to accept power input from an isolated DC-DC converter and provide DC power to the load.

15. The electronic system of claim 8, wherein the first terminal is electrically connected to a corresponding second terminal of the second terminal via a third conductive path embedded in the electrical insulator.

16. A power module, comprising: An embedded structure includes: an electrical insulator; a first set of terminals on a first side of the electrical insulator; and a second set of terminals on a second side of the electrical insulator opposite to the first side. A first semiconductor chip, embedded in the electrical insulator, includes a vertically oriented low-side power transistor; and A second semiconductor chip is attached to the first set of terminals on the first side of the electrical insulator and includes a lateral high-side power transistor. All signal I / O connections and input power connections to the second semiconductor chip are provided by a subset of the second set of terminals on the second side of the electrical insulator and by conductive paths embedded in the electrical insulator. The longitudinal low-side power transistor and the lateral high-side power transistor are electrically connected within the embedded structure to form the switching node of the half-bridge circuit. One of the terminals in the second set of terminals included on the second side of the electrical insulator provides an external electrical contact for the switching node; The vertical low-side power transistor is a vertical power MOSFET, wherein the gate terminal and source terminal of the vertical power MOSFET face the second side of the electrical insulator and are electrically connected to a corresponding second terminal in the second set of terminals through respective conductive paths, the respective conductive paths being embedded in the electrical insulator and located between the first semiconductor chip and the second side of the electrical insulator, and wherein the drain terminal of the vertical power MOSFET faces the first side of the electrical insulator and forms part of the switching node; The lateral high-side power transistor is a lateral power MOSFET, wherein the gate and drain terminals of the lateral power MOSFET face the first side of the electrical insulator and contact a corresponding first terminal in the first set of terminals, and wherein the source terminal of the lateral power MOSFET faces the first side of the electrical insulator, forming part of the switching node, and is electrically connected to the drain terminal of the longitudinal power MOSFET through respective conductive paths embedded in the electrical insulator and located between the first semiconductor chip and the first side of the electrical insulator; and The source terminal of the lateral power MOSFET and the drain terminal of the vertical power MOSFET at least partially overlap each other; and the gate terminal and drain terminal of the lateral power MOSFET do not overlap with the first semiconductor chip.

17. The power module of claim 16, wherein the second semiconductor chip further includes driver circuitry for the lateral high-side power transistor.

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