Image sensor and electronic device including the same

Abstract

An image sensor includes a light detector including a plurality of light sensitive cells configured to sense light, a dichroic lens array disposed above the light detector and including a plurality of pattern structures, the dichroic lens array configured to collect light having different wavelength spectra onto at least two of the plurality of light sensitive cells, respectively, and a variable spacer element configured to adjust an optical distance between the light detector and the dichroic lens array.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2020-0016627, filed with the Korean Intellectual Property Office on February 11, 2020, and Korean Patent Application No. 10-2020-0120027, filed with the Korean Intellectual Property Office on September 17, 2020, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0003] The exemplary embodiments consistent with this disclosure relate to image sensors and electronic devices including image sensors. Background Technology

[0004] Typically, image sensors use color filters to display images with various colors or to detect the color of incident light. However, color filters absorb all colors of light except for the color corresponding to each filter, thus their optical efficiency can be low. For example, because RGB (red, green, and blue) color filters transmit only about 1 / 3 of the incident light and absorb about 2 / 3, they have an optical efficiency of only about 33%, resulting in significant optical losses.

[0005] Recently, attempts have been made to improve the optical efficiency of image sensors by replacing color filters with diffractors. A diffractor separates the colors of incident light by using diffraction or refraction of light that varies according to its wavelength, and the directionality of the light can be adjusted by using the diffractor's refractive index and shape. The colors separated by the diffractor can be sent to their corresponding pixels. However, the purity of colors separated by existing diffractors is poor, thus requiring improvements in color purity. Summary of the Invention

[0006] The example embodiments provide an image sensor and an electronic device including the image sensor.

[0007] Additional aspects will be set forth in part in the description which follows, and will also be apparent in part from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0008] According to one aspect of an example embodiment, an image sensor includes: a photodetector including a plurality of photosensitive units configured to sense light; a dichroic lens array disposed above the photodetector and including a plurality of patterned structures, the dichroic lens array being configured to collect light with different wavelength spectra onto at least two of the plurality of photosensitive units; and a variable sandwich element configured to adjust the optical distance between the photodetector and the dichroic lens array.

[0009] The variable sandwich element can also be configured to adjust the physical distance between the photodetector and the dichroic lens array.

[0010] The variable sandwich element may include a microelectromechanical system actuator configured to drive the position of the dichroic lens array.

[0011] The variable sandwich element may include: a deformable structure, including a deformable material capable of changing shape according to an electrical signal applied thereto; and a signal application unit configured to apply an electrical signal to the deformable structure.

[0012] Deformable materials can include shape memory alloys or electroactive polymers.

[0013] The variable sandwich element may include: a frame structure including a variable height region having a stretchable membrane disposed thereon; and a storage region therein storing optical fluid to be introduced into the variable height region; and a signal application unit configured to apply a signal to move the optical fluid between the storage region and the variable height region for stretching or shrinking the stretchable membrane.

[0014] The variable interlayer element may include: a variable refractive index layer having a refractive index that can vary according to an electrical signal applied thereto; and a signal application unit configured to apply an electrical signal to the variable refractive index layer.

[0015] The variable refractive index layer includes LiNbO3, LiTaO3, potassium tantalite (KTN), lead zirconate titanate (PZT), VO2, VO2O3, EuO, MnO, CoO, CoO2, LiCoO2, Ca2RuO4, or liquid crystal.

[0016] The image sensor may also include a processor configured to control variable sandwich elements to form multiple optical distances that are different from each other, and to acquire image data by processing signals sensed by photodetectors at the multiple optical distances respectively.

[0017] The processor can be configured to perform calculations on image data using a spectral dataset based on the optical distance between the photodetector and the dichroic lens array.

[0018] A dichroic lens array may include multiple photosensitive units facing a photodetector and multiple regions including at least one patterned structure, and the multiple regions may be configured to collect light with different wavelength spectra onto adjacent photosensitive units of the multiple photosensitive units respectively.

[0019] The multiple regions may include a first region, a second region, a third region, and a fourth region, each of which includes at least one of multiple pattern structures, and the multiple photosensitive units may include a first photosensitive unit, a second photosensitive unit, a third photosensitive unit, and a fourth photosensitive unit, each of which faces the first region, the second region, the third region, and the fourth region, respectively.

[0020] An image sensor may have a pixel arrangement structure in which multiple unit pixels are arranged in a Bayer pattern according to an optical distance, and the multiple unit pixels include red, green and blue pixels.

[0021] The shape, arrangement, and size of the pattern structures respectively set in the first, second, third, and fourth regions can be determined such that, immediately after passing through the dichroic lens array, light with a first wavelength has a phase difference of 2Nπ at positions corresponding to the center portions of the first and fourth photosensitive units, and a phase difference of (2N-1)π at positions corresponding to the center portions of the second and third photosensitive units, where N is an integer greater than 0.

[0022] The shape, arrangement, and size of the pattern structures respectively set in the first, second, third, and fourth regions can be determined such that, immediately after passing through the dichroic lens array, light with a second wavelength has a phase difference of 2Mπ at the position corresponding to the center portion of the second photosensitive unit, a phase difference of (2M-1)π at the positions corresponding to the center portions of the first and fourth photosensitive units, and a phase difference greater than (2M-2)π and less than (2M-1)π at the position corresponding to the center portion of the third photosensitive unit, where M is an integer greater than 0.

[0023] The shape, arrangement, and size of the pattern structures respectively set in the first, second, third, and fourth regions can be determined such that, immediately after passing through the dichroic lens array, light with a third wavelength has a phase difference of 2Lπ at the position corresponding to the center portion of the third photosensitive unit, a phase difference of (2L-1)π at the positions corresponding to the center portions of the first and fourth photosensitive units, and a phase difference greater than (2L-2)π and less than (2L-1)π at the position corresponding to the center portion of the second photosensitive unit, where L is an integer greater than 0.

[0024] Multiple patterned structures may include multiple nanopillars, and the nanopillars disposed in the first region, the second region, the third region, and the fourth region may differ from each other in at least one aspect of shape, size, and arrangement.

[0025] Nanopillars can be arranged in the regions corresponding to the green pixels in the first, second, third, and fourth regions according to different distribution rules in the first direction and the second direction perpendicular to the first direction.

[0026] Nanopillars can be arranged in the regions corresponding to the blue and red pixels in the first, second, third, and fourth regions according to the symmetrical distribution rules in the first and second directions.

[0027] Multiple pattern structures may include a first pattern structure, a second pattern structure, a third pattern structure, and a fourth pattern structure respectively formed in a first region, a second region, a third region, and a fourth region.

[0028] The first pattern structure may include a first dielectric and a second dielectric. The first dielectric has a first refractive index and is arranged in a first form. The second dielectric has a second refractive index less than the first refractive index and fills the gaps in the first dielectric arranged in the first form. The first dielectric may exist in any vertical cross-section of the first pattern structure.

[0029] The first and fourth regions correspond to green pixels, the second region corresponds to blue pixels, and the third region corresponds to red pixels. The first and fourth pattern structures can have a two-fold symmetry, the second and third pattern structures can have a four-fold symmetry, and the fourth pattern structure can be rotated 90 degrees relative to the first pattern structure.

[0030] According to one aspect of an example embodiment, an imaging device is provided, comprising: an imaging unit configured to form an optical image by converging light reflected from an object; and an image sensor configured to convert the optical image formed by the imaging unit into an electrical signal, wherein the image sensor includes: a photodetector including a plurality of photosensitive units configured to sense light; a dichroic lens array disposed above the photodetector and including a plurality of patterned structures, the dichroic lens array being configured to collect light with different wavelength spectra onto at least two of the plurality of photosensitive units; and a variable sandwich element configured to adjust the optical distance between the photodetector and the dichroic lens array.

[0031] According to one aspect of an example embodiment, an electronic device is provided, including an imaging device comprising: an imaging unit configured to form an optical image by converging light reflected from an object; and an image sensor configured to convert the optical image formed by the imaging unit into an electrical signal, wherein the image sensor includes: a photodetector including a plurality of photosensitive units configured to sense light; a dichroic lens array disposed above the photodetector and including a plurality of patterned structures, the dichroic lens array being configured to collect light with different wavelength spectra onto at least two of the plurality of photosensitive units; and a variable sandwich element configured to adjust the optical distance between the photodetector and the dichroic lens array. Attached Figure Description

[0032] The above and other aspects, features, and advantages of certain exemplary embodiments of this disclosure will become clearer from the following description taken in conjunction with the accompanying drawings, in which:

[0033] Figure 1 This is a block diagram illustrating an image sensor according to an example embodiment;

[0034] Figure 2 This is a conceptual diagram illustrating the pixel array configuration of an image sensor according to an example embodiment;

[0035] Figure 3A and Figure 3B Different cross-sectional views of the pixel array configuration of the image sensor in the example embodiment are shown schematically;

[0036] Figure 4A and Figure 4B This is an example plan view showing the pixel arrangement of an image sensor and the arrangement of photosensitive units corresponding to the pixel regions of the image sensor according to an example embodiment;

[0037] Figure 4C This is an example plan view illustrating the fine structure arranged in multiple regions of a dichroic lens array according to an example embodiment. Figure 4D It shows Figure 4C An enlarged plan view of the area;

[0038] Figure 5 This is a conceptual diagram illustrating that incident light, according to an example embodiment, has different spectra depending on the distance from the dichroic lens array in the image sensor;

[0039] Figures 6A to 6D It is a graph showing the spectrum of light incident on multiple photosensitive units at different optical distances between the dichroic lens array and the photodetector in the image sensor, according to an example embodiment;

[0040] Figure 7This is a flowchart schematically illustrating the image acquisition process of an image sensor according to an example embodiment;

[0041] Figure 8 This is a schematic cross-sectional view illustrating the pixel array configuration of an image sensor according to another example embodiment;

[0042] Figure 9 This is a schematic cross-sectional view illustrating the pixel array configuration of an image sensor according to another example embodiment;

[0043] Figure 10 This is a schematic cross-sectional view illustrating the pixel array configuration of an image sensor according to another example embodiment;

[0044] Figure 11 This is a schematic cross-sectional view illustrating the pixel array configuration of an image sensor according to another example embodiment;

[0045] Figure 12 This is an example plan view illustrating a unit pattern array of a dichroic lens array disposed in an image sensor according to another example embodiment;

[0046] Figure 13 This is an example plan view illustrating a unit pattern array of a dichroic lens array disposed in an image sensor according to another example embodiment;

[0047] Figure 14 This is a schematic diagram of an example plan view of a unit pattern array of a dichroic lens array disposed in an image sensor according to another example embodiment;

[0048] Figures 15A to 15D They are shown separately Figure 14 Plan view of the first to fourth regions of the unit pattern array shown;

[0049] Figure 16 This is an example plan view showing a unit pattern array of a dichroic lens array according to another example embodiment;

[0050] Figure 17 This is an example plan view showing a unit pattern array of a dichroic lens array according to another example embodiment;

[0051] Figure 18 This is a schematic block diagram illustrating an electronic device including an image sensor according to an example embodiment; and

[0052] Figures 19 to 29 This is a view showing various multimedia devices as examples of electronic devices that utilize image sensors, according to exemplary embodiments. Detailed Implementation

[0053] In the following description, embodiments will be illustrated with reference to the accompanying drawings. The embodiments described herein are for illustrative purposes only, and various modifications may be made therein. In this regard, exemplary embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, exemplary embodiments will be described below with reference to the accompanying drawings to explain various aspects.

[0054] The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of…” modify the entire list of elements when following it, rather than individual elements within the list. For example, the expression “at least one of a, b, and c” should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0055] In the accompanying drawings, similar reference numerals refer to similar elements, and the size of the elements may be enlarged for clarity.

[0056] In the following description, when an element is referred to as being “on” or “above” another element, it may be directly on and in contact with the other element, or it may be on the other element without contacting it.

[0057] Although the terms "first" and "second" are used to describe various elements, these terms are only used to distinguish one element from another. These terms do not limit the elements to having different materials or structures.

[0058] Unless otherwise stated, singular terms may include plural forms. It will also be understood that the terms “comprising” and / or “including” as used herein specify the presence of the described feature or element, but do not exclude the presence or addition of one or more other features or elements.

[0059] In this disclosure, terms such as “unit” or “module” may be used to refer to a unit having at least one function or operation and implemented in hardware, software or a combination of hardware and software.

[0060] An element mentioned with a definite article or demonstrative pronoun can be interpreted as one or more elements, even if it is in the singular form.

[0061] Unless explicitly described or otherwise, the operations of the method may be performed in the appropriate order. Furthermore, examples or exemplary terms (e.g., “such as” and “etc.”) are used for descriptive purposes and are not intended to limit the scope of this disclosure unless defined by the claims.

[0062] Figure 1This is a schematic block diagram of an image sensor 1000 according to an example embodiment, and Figure 2 This is a conceptual diagram illustrating the pixel array configuration of an image sensor 1000 according to an example embodiment.

[0063] Reference Figure 1 According to an example embodiment, the image sensor 1000 may include a pixel array 1100, a timing controller (T / C) 1010, a line decoder 1020, an output circuit 1030, and a processor 1040. The processor 1040 is configured to control the pixel array 1100, the timing controller 1010, and the output circuit 1030, and to process the image signal output through the output circuit 1030. The image sensor 1000 in the example embodiment may include a charge-coupled device (CCD) image sensor or a complementary metal-oxide-semiconductor (CMOS) image sensor.

[0064] Pixel array 1100 includes a plurality of pixels arranged in multiple rows and columns in a two-dimensional configuration. Row decoder 1020 selects one of the rows of pixel array 1100 in response to a row address signal output from timing controller 1010. Output circuitry 1030 outputs light detection signals received from the plurality of pixels arranged in the selected row on a column-by-column basis. For this purpose, output circuitry 1030 may include column decoders and analog-to-digital converters (ADCs). For example, output circuitry 1030 may include a plurality of ADCs arranged column-by-column between column decoders and pixel array 1100. Alternatively, output circuitry 1030 may include an ADC disposed at the output of column decoder. According to an example embodiment, timing controller 1010, row decoder 1020, output circuitry 1030, and processor 1040 may be implemented as a single chip or may be implemented as separate chips.

[0065] like Figure 2 As shown, the pixel array 1100 includes: a photodetector 100 including a plurality of photosensitive units for sensing light; a dichroic lens array 700 disposed above the photodetector 100 and including a plurality of patterned structures PS; and a variable interlayer element 500 configured to adjust the optical distance OL between the photodetector 100 and the dichroic lens array 700.

[0066] The dichroic lens array 700 is configured to separate incident light, such that light with different wavelength spectra can be incident on at least two different units of the photodetector 100. For this purpose, factors such as the size, position, or arrangement of the pattern structure PS of the dichroic lens array 700 can be set. The dichroic lens array 700 may include multiple regions facing the photosensitive units of the photodetector 100, and immediately after the incident light passes through the dichroic lens array 700, the light can have a predetermined phase distribution according to the regional arrangement and pattern structure PS of the dichroic lens array 700.

[0067] When light with a predetermined phase distribution is incident on the photodetector 100 after traveling a predetermined distance from the dichroic lens array 700, the wavelength spectrum of the light incident on the photosensitive unit of the photodetector 100 is determined according to the predetermined distance. The predetermined distance is the optical length OL, which is determined by the refractive index (n) of the medium ME between the dichroic lens array 700 and the photodetector 100 and the physical distance S between the dichroic lens array 700 and the photodetector 100, where OL = n*S.

[0068] According to an example embodiment, the pixel array 1100 of the image sensor 1000 includes a variable mezzanine element 500 configured to change the optical distance OL. The variable mezzanine element 500 includes a medium ME and a variable drive provider VS configured to variably drive the medium ME. The variable drive provider VS may include a structure and / or a variable signal application unit connected in various forms to the medium ME to adjust the optical distance OL. The variable drive provider VS may be controlled by a processor 1040. For example, the processor 1040 may control the variable mezzanine element 500 to form a predetermined optical distance OL or multiple optical distances OL that are different from each other. When the processor 1040 processes the signal output from the optical detection unit 100, the optical distance OL or multiple optical distances OL configured as described above can be used. (Refer to...) Figures 5 to 7 This is described below. The variable sandwich element 500 can change the physical distance S between the photodetector 100 and the dichroic lens array 700, or change the refractive index of the medium ME between the photodetector 100 and the dichroic lens array 700. In the medium ME and structures connected to the medium ME in various forms, the element located between the dichroic lens array 700 and the photodetector 100 may include a light-transmitting material. The photodetector 100 can be located at multiple positions according to the optical distance OL determined by the variable sandwich element 500, and can obtain optical information at these positions based on different spectra.

[0069] Each element of pixel array 1100 will now be described.

[0070] Figure 3A and Figure 3B Different cross-sectional views of the pixel array 1100 of the image sensor 1000 according to an example embodiment are schematically shown, and Figure 4A and Figure 4B This is a plan view showing the pixel arrangement of the image sensor 1000 according to an example embodiment and the arrangement of the photosensitive units of the image sensor 1000 corresponding to the pixel regions. Figure 4C This is an example plan view showing multiple pattern structures PS arranged in multiple regions of a dichroic lens array 700 according to an example embodiment, and Figure 4D It shows Figure 4CA magnified planar view of the area. The pixel array 1100 includes a photodetector 100, which includes photosensitive units configured to sense light, such as a first photosensitive unit 110, a second photosensitive unit 120, a third photosensitive unit 130, and a fourth photosensitive unit 140; and a dichroic lens array 700 is arranged above the photodetector 100 at a certain distance from it.

[0071] The photodetector 100 may include a first photosensitive unit 110, a second photosensitive unit 120, a third photosensitive unit 130, and a fourth photosensitive unit 140 configured to convert light into electrical signals. The first photosensitive unit 110, the second photosensitive unit 120, the third photosensitive unit 130, and the fourth photosensitive unit 140 may be arranged alternately. Figure 3A As shown in the cross-sectional view, the first photosensitive unit 110 and the second photosensitive unit 120 can be alternately arranged in the first direction (X direction), and as shown in the cross-sectional view taken at different positions in the Y direction. Figure 3B As shown in another cross-sectional view, the third photosensitive unit 130 and the fourth photosensitive unit 140 can be arranged alternately. This unit arrangement is used for sensing incident light based on pixels, and for example, the first photosensitive unit 110 and the fourth photosensitive unit 140 can sense light having a first spectrum corresponding to the first pixel P1, the second photosensitive unit 120 can sense light having a second spectrum corresponding to the second pixel P2, and the third photosensitive unit 130 can sense light having a third spectrum corresponding to the third pixel P3. The light having the first spectrum can be green light, the light having the second spectrum can be blue light, and the light having the third spectrum can be red light. However, this is a non-limiting example. In the example embodiment, since the optical distance OL between the photodetector 100 of the image sensor 1000 and the dichroic lens array 700 is variable, the first spectrum, the second spectrum, and the third spectrum can have different ratios of green, red, and blue light, and this ratio can vary according to the optical distance OL. Separating films can be further formed at the unit boundaries to separate the units.

[0072] The dichroic lens array 700 includes a pattern structure PS arranged according to predetermined rules. These rules apply to parameters such as the shape, size (width, height), spacing, and arrangement of the pattern structure PS, and can be determined based on the target phase distribution of the light incident on the dichroic lens array 700. The target phase distribution refers to the phase distribution of the incident light immediately following its passage through the dichroic lens array 700.

[0073] The patterned structure PS may include at least one selected from the group consisting of c-Si, p-Si, a-Si, III-V compound semiconductors (GaP, GaN, GaAs, etc.), SiC, TiO2 and SiN.

[0074] Patterned structures (PS) can have subwavelength shape dimensions. The term "subwavelength" refers to a value smaller than the wavelength of incident light with the desired phase distribution. At least one of the dimensions defining the shape of the patterned structure PS can be a subwavelength dimension.

[0075] The patterned structure PS can be supported by the material of the dielectric ME disposed between the patterned structure PS and the photodetector 100. However, this is merely an example. In another example, the material of the dielectric ME can be air, and an additional support layer can be provided. In this case, the support layer can include any material selected from the group consisting of glass (fused silica, BK7, etc.), quartz, polymers (PMMA, SU-8, etc.), and plastics. The material of the dielectric ME or support layer can have a refractive index lower than that of the patterned structure PS material. Additionally, a protective layer can be provided to protect the patterned structure PS. The protective layer can include a dielectric material with a refractive index lower than that of the patterned structure PS material.

[0076] A patterned structure PS with a refractive index different from that of the surrounding material can alter the phase of light passing through it. This is because the subwavelength shape and size of the patterned structure PS causes a phase delay, and the amount of phase delay is determined by factors such as the shape and size of the patterned structure PS and their arrangement. The amount of phase delay that occurs at each patterned structure PS in the dichroic lens array 700 can be set such that the incident light can have a desired phase distribution.

[0077] The patterned structure PS can be shaped, resized, and arranged to form a phase distribution for collecting light of different spectra onto the first photosensitive unit 110 and the second photosensitive unit 120, which are adjacent to each other. Additionally, the patterned structure PS can be shaped, resized, and arranged to form a phase distribution for collecting light of different spectra onto the third photosensitive unit 130 and the fourth photosensitive unit 140, which are adjacent to each other.

[0078] The dichroic lens array 700 is divided into multiple regions, such as a first region 710, a second region 720, a third region 730, and a fourth region 740 corresponding one-to-one with the first photosensitive unit 110, the second photosensitive unit 120, the third photosensitive unit 130, and the fourth photosensitive unit 140. At least one pattern structure PS can be arranged in each of the first region 710, the second region 720, the third region 730, and the fourth region 740, and at least one of the shape, size, and arrangement of the pattern structure PS can vary according to the first region 710, the second region 720, the third region 730, and the fourth region 740.

[0079] like Figure 3A and Figure 3BAs shown, the dichroic lens array 700 can be divided into multiple regions, such that the first region 710 and the first photosensitive unit 110 correspond to each other, the second region 720 and the second photosensitive unit 120 correspond to each other, the third region 730 and the third photosensitive unit 130 correspond to each other, and the fourth region 740 and the fourth photosensitive unit 140 correspond to each other. The dichroic lens array 700 includes multiple unit pattern arrays arranged in two dimensions, and each unit pattern array includes four regions arranged in a 2×2 configuration: namely, the first region 710, the second region 720, the third region 730, and the fourth region 740.

[0080] Figure 3A and Figure 3B The illustration shows a first region 710, a second region 720, a third region 730, and a fourth region 740, as well as first photosensitive units 110, second photosensitive units 120, third photosensitive units 130, and fourth photosensitive units 140, all of the same size and facing each other in the vertical direction. However, this is a non-limiting example. Multiple regions defined in different forms may correspond to multiple photosensitive units. This also applies to other exemplary embodiments described below.

[0081] The dichroic lens array 700 can be divided into multiple regions to separate light and collect the separated light on the first photosensitive unit 110, the second photosensitive unit 120, the third photosensitive unit 130, and the fourth photosensitive unit 140. Light with a first spectrum is collected on the first photosensitive unit 110 and the fourth photosensitive unit 140, light with a second spectrum is collected on the second photosensitive unit 120, and light with a third spectrum is collected on the third photosensitive unit 130. Furthermore, the size, shape, and arrangement of the pattern structure PS can be determined based on the regions of the dichroic lens array 700. Figure 4AAs shown, the pixel arrangement in pixel array 1100 can resemble a Bayer pattern. Each unit pixel comprises four quadrant regions, which are assigned two first pixels P1, one second pixel P2, and one third pixel P3. The unit pixels are arranged repeatedly in a two-dimensional pattern along a first direction (X-direction) and a second direction (Y-direction). In each unit pixel having a 2×2 array configuration, the two first pixels P1 are arranged diagonally, and in that unit pixel, one second pixel P2 and one third pixel P3 are arranged diagonally on the other side. Overall, the first and second rows are arranged repeatedly, wherein in each first row, multiple first pixels P1 and multiple second pixels P2 are alternately arranged along the first direction, and in each second row, multiple third pixels P3 and multiple first pixels P1 are alternately arranged along the first direction. The colors of the first pixels P1, second pixels P2, and third pixels P3 are not fixed but can vary according to the optical distance OL between the photodetector 100 and the dichroic lens array 700. The color or wavelength distribution of the first pixel P1, the second pixel P2, and the third pixel P3 can be represented by the first spectrum, the second spectrum, and the third spectrum, respectively. Furthermore, the specific wavelength distribution of the first, second, and third spectra can vary depending on the optical distance OL.

[0082] Reference Figure 4B The first photosensitive unit 110, the second photosensitive unit 120, the third photosensitive unit 130, and the fourth photosensitive unit 140 are arranged in a two-dimensional configuration along a first direction (X-direction) and a second direction (Y-direction), such that rows of alternating arrangements of the first and second photosensitive units 110 and 120, and rows of alternating arrangements of the third and fourth photosensitive units 130, can be repeated alternately. Therefore, the first photosensitive unit 110 or the fourth photosensitive unit 140 corresponds to the first pixel P1, the second photosensitive unit 120 corresponds to the second pixel P2, and the third photosensitive unit 130 corresponds to the third pixel P3.

[0083] Reference Figure 4B and Figure 4C The first photosensitive unit 110 and the first region 710 may correspond to some of the first pixels P1, the fourth photosensitive unit 140 and the fourth region 740 may correspond to the remaining first pixels P1, the second photosensitive unit 120 and the second region 720 may correspond to the second pixel P2, and the third photosensitive unit 130 and the third region 730 may correspond to the third pixel P3.

[0084] like Figure 4CAs shown, pattern structures PS with different cross-sectional areas can be arranged on the central portions of the first pixel P1, the second pixel P2, and the third pixel P3, and the pattern structures PS can be arranged at the center and intersection of the boundaries between the first pixel P1, the second pixel P2, and the third pixel P3. The cross-sectional area of ​​the pattern structure PS arranged on the boundaries of the first pixel P1, the second pixel P2, and the third pixel P3 can be smaller than the cross-sectional area of ​​the pattern structure PS arranged on the central portions of the first pixel P1, the second pixel P2, and the third pixel P3.

[0085] Figure 4D It shows Figure 4C The regions, namely, the arrangement of pattern structures PS in the first region 710, the second region 720, the third region 730, and the fourth region 740 forming the unit pattern array. Figure 4D In the diagram, the pattern structure PS is represented by p1 to p9 according to its position in the unit pattern array. The pattern structure PS is shown in the diagram. Figure 4D The cross-sectional areas of pattern structure p1 arranged in the central portion of the first region 710 and pattern structure p4 arranged in the central portion of the fourth region 740 are greater than the cross-sectional areas of pattern structure p2 arranged in the central portion of the second region 720 and pattern structure p3 arranged in the central portion of the third region 730, and the cross-sectional area of ​​pattern structure p2 arranged in the central portion of the second region 720 is greater than the cross-sectional area of ​​pattern structure p3 arranged in the central portion of the third region 730. However, this is only an example, and the pattern structures PS can have various shapes, sizes, and arrangements. Here, the cross-sectional area of ​​each pattern structure PS refers to the area of ​​the cross section of the pattern structure PS in the direction perpendicular to the height of the pattern structure PS (Z direction).

[0086] The pattern structure PS disposed in the first region 710 and the fourth region 740 corresponding to the first pixel P1 can be distributed according to different distribution rules in the first direction (X direction) and the second direction (Y direction). For example, the pattern structure PS disposed in the first region 710 and the fourth region 740 corresponding to the first pixel P1 can be arranged with different sizes in the first direction (X direction) and the second direction (Y direction). The pattern structure PS is shown with reference to... Figure 4DThe cross-sectional area of ​​pattern structure p5 located at the boundary of the first region 710 adjacent to the second region 720 in the first direction (X direction) is different from the cross-sectional area of ​​pattern structure p6 located at the boundary of the first region 710 adjacent to the third region 730 in the second direction (Y direction). Similarly, the cross-sectional area of ​​pattern structure p7 located at the boundary of the fourth region 740 adjacent to the third region 730 in the first direction (X direction) is different from the cross-sectional area of ​​pattern structure p8 located at the boundary of the fourth region 740 adjacent to the second region 720 in the second direction (Y direction).

[0087] The pattern structure PS can be arranged in the second region 720 corresponding to the second pixel P2 and the third region 730 corresponding to the third pixel P3 according to the symmetrical distribution rules in the first direction (X direction) and the second direction (Y direction). For example... Figure 4D As shown, in the pattern structure PS, the cross-sectional area of ​​the pattern structure p5 arranged at the boundary between the second region 720 and the region adjacent to the second region 720 in the first direction (X direction) is equal to the cross-sectional area of ​​the pattern structure p8 arranged at the boundary between the second region 720 and the region adjacent to the second region 720 in the second direction (Y direction), and the cross-sectional area of ​​the pattern structure p7 arranged at the boundary between the third region 730 and the region adjacent to the third region 730 in the first direction (X direction) is equal to the cross-sectional area of ​​the pattern structure p6 arranged at the boundary between the third region 730 and the region adjacent to the third region 730 in the second direction (Y direction).

[0088] In addition, the pattern structure p9 arranged at the four corners of each of the first region 710, the second region 720, the third region 730 and the fourth region 740 (i.e., at each position where the four regions meet each other) has the same cross-sectional area.

[0089] This distribution is attributed to a pixel arrangement similar to a Bayer pattern. Both the second pixel P2 and the third pixel P3 have the first pixel P1 as their neighbor in the first direction (X direction) and the second direction (Y direction). However, the first pixel P1 corresponding to the first region 710 has different neighboring pixels: the second pixel P2 in the first direction (X direction) and the third pixel P3 in the second direction (Y direction). Similarly, the first pixel P1 corresponding to the fourth region 740 has different neighboring pixels: the third pixel P3 in the first direction (X direction) and the second pixel P2 in the second direction (Y direction). Furthermore, each first pixel P1 corresponding to the first region 710 and the fourth region 740 has the first pixel P1 as its neighbor in the four diagonal directions; the second pixel P2 corresponding to the second region 720 has the third pixel P3 as its neighbor in the four diagonal directions; and the third pixel P3 corresponding to the third region 730 has the second pixel P2 as its neighbor in the four diagonal directions. Therefore, the pattern structure PS can be arranged with four-fold symmetry in the second region 720 and the third region 730, which correspond to the second pixel P2 and the third pixel P3, respectively, and the pattern structure PS can be arranged with two-fold symmetry in the first region 710 and the fourth region 740, which correspond to the first pixel P1. In particular, the first region 710 and the fourth region 740 are rotated 90 degrees relative to each other.

[0090] All pattern structures PS are shown as having symmetrical circular cross-sectional shapes, but are not limited to this. Some pattern structures may have asymmetrical cross-sectional shapes. For example, pattern structures PS with asymmetrical cross-sectional shapes having different widths in the first direction (X direction) and the second direction (Y direction) may be arranged in the first region 710 and the fourth region 740 corresponding to the first pixel P1, and pattern structures PS with symmetrical cross-sectional shapes having the same width in the first direction (X direction) and the second direction (Y direction) may be arranged in the second region 720 and the third region 730 corresponding to the second pixel P2 and the third pixel P3, respectively.

[0091] The arrangement of the dichroic lens array 700 is exemplified in that, immediately following its passage, light with a target phase distribution is separated or collected in such a manner that light with a first spectrum is collected on the first photosensitive unit 110 and the fourth photosensitive unit 140, light with a second spectrum is collected on the second photosensitive unit 120, and light with a third spectrum is collected on the third photosensitive unit 130. However, the arrangement of the dichroic lens array 700 is not limited to the pattern shown.

[0092] The shape, size, and arrangement of the pattern structure PS in each region of the dichroic lens array 700 can be determined such that, after passing through the dichroic lens array 700, light with the first spectrum can have a phase distribution for being collected on the first photosensitive unit 110 and the fourth photosensitive unit 140, without advancing to the second photosensitive unit 120 and the third photosensitive unit 130 adjacent to the first photosensitive unit 110 and the fourth photosensitive unit 140.

[0093] Similarly, the shape, size, and arrangement of the pattern structure PS set in each region of the dichroic lens array 700 can be determined such that after passing through the dichroic lens array 700, light with the second spectrum can have a phase distribution for being collected on the second photosensitive unit 120, without advancing to the first photosensitive unit 110, the third photosensitive unit 130, and the fourth photosensitive unit 140 adjacent to the second photosensitive unit 120.

[0094] Similarly, the shape, size, and arrangement of the pattern structure PS set in each region of the dichroic lens array 700 can be determined such that after passing through the dichroic lens array 700, light with the third spectrum can have a phase distribution for being collected on the third photosensitive unit 130, without advancing to the first photosensitive unit 110, the second photosensitive unit 120, and the fourth photosensitive unit 140 adjacent to the third photosensitive unit 130.

[0095] According to an example embodiment, the pixel array 1100 of the image sensor 1000 may have a variable optical distance between the light detection unit 100 and the dichroic lens array 700, and thus, wavelength-dependent light separation based on the shape, size, and arrangement of the pattern structure PS can be described by assuming a specific optical distance.

[0096] The shape, size, and / or arrangement of the pattern structure PS can be determined to satisfy all these conditions, and the light can immediately have the following target phase distribution after passing through the dichroic lens array 700. At a position immediately following the dichroic lens array 700, i.e., on the lower surface of the dichroic lens array 700 or the upper surface of the variable sandwich element 500, light with a first wavelength can have a phase difference of 2Nπ in the central portion of the first region 710 corresponding to the first photosensitive unit 110 and the central portion of the fourth region 740 corresponding to the fourth photosensitive unit 140, and a phase difference of (2N-1)π in the central portion of the second region 720 corresponding to the second photosensitive unit 120 and the central portion of the third region 730 corresponding to the third photosensitive unit 130. Here, N is an integer greater than 0. In other words, immediately following the dichroic lens array 700, light with the first wavelength can have a phase distribution that peaks in the central portions of the first region 710 and the fourth region 740, then gradually decreases in a concentric circle shape to have valleys in the central portions of the second region 720 and the third region 730. For example, when N=1, the phase of light with the first wavelength at the position following the dichroic lens array 700 can be 2π in the central portions of the first region 710 and the fourth region 740, and can be π in the central portions of the second region 720 and the third region 730. Here, the phase of light can refer to the phase relative to the phase of light preceding the dichroic lens array 700.

[0097] Furthermore, immediately following the dichroic lens array 700, the phase of light with the second wavelength can be 2Mπ in the central portion of the second region 720 corresponding to the second photosensitive unit 120, (2M-1)π in the central portions of the first region 710 corresponding to the first photosensitive unit 110 and the fourth region 740 corresponding to the fourth photosensitive unit 140, and a value greater than (2M-2)π but less than (2M-1)π in the central portion of the third region 730 corresponding to the third photosensitive unit 130. Here, M is an integer greater than 0. In other words, immediately following the dichroic lens array 700, light with the second wavelength can have a phase distribution that reaches a peak in the central portion of the second region 720 and then gradually decreases in a concentric circle shape, so as to have a local minimum in the central portions of the first region 710, the fourth region 740, and the third region 730. For example, when M=1, at a position after the dichroic lens array 700, the phase of light with the second wavelength can be 2π in the central part of the second region 720, π in the central parts of the first region 710 and the fourth region 740, and a value of about 0.2π to about 0.7π in the central part of the third region 730.

[0098] Similarly, immediately following the dichroic lens array 700, the phase of light with the third wavelength can be 2Lπ in the central portion of the third region 730 corresponding to the third photosensitive unit 130, (2L-1)π in the central portions of the first region 710 corresponding to the first photosensitive unit 110 and the fourth region 740 corresponding to the fourth photosensitive unit 140, and a value greater than (2L-2)π but less than (2L-1)π in the central portion of the second region 720 corresponding to the second photosensitive unit 120. Here, L is an integer greater than 0. In other words, immediately following the dichroic lens array 700, light with the third wavelength can have a phase distribution that peaks in the central portion of the third region 730 and then gradually decreases in a concentric circle shape to have a local minimum in the central portions of the first region 710, the fourth region 740, and the second region 720. For example, when L=1, at a position after the dichroic lens array 700, the phase of light with a third wavelength can be 2π in the central part of the third region 730, can be π in the central parts of the first region 710 and the fourth region 740, and can be a value of about 0.2π to about 0.7π in the central part of the second region 720.

[0099] The light with the first wavelength, the light with the second wavelength, and the light with the third wavelength can be green light, blue light, and red light, respectively. However, this is a non-limiting example.

[0100] As described above, the target phase distribution refers to the phase distribution immediately following the dichroic lens array 700. When light with the target phase distribution travels towards the first photosensitive unit 110, the second photosensitive unit 120, the third photosensitive unit 130, and the fourth photosensitive unit 140, the light can have different spectra depending on the distance it has traveled. That is, by adjusting the optical distance OL to the photodetector 100, light with different spectra can be collected on the first photosensitive unit 110, the second photosensitive unit 120, the third photosensitive unit 130, and the fourth photosensitive unit 140.

[0101] Figure 5 This is a conceptual diagram illustrating that the incident light Li has different spectra depending on the distance from the dichroic lens array 700 in the image sensor 1000 of the example embodiment, and Figures 6A to 6D This is a graph showing the spectrum of incident light separated by the first photosensitive unit 110, the second photosensitive unit 120, and the third photosensitive unit 130 at different optical distances OL between the dichroic lens array 700 and the photodetector 100 in the image sensor 1000 of the example embodiment.

[0102] Reference Figure 5 The incident light Li immediately acquires a predetermined target phase distribution after passing through the dichroic lens array 700. Different spectral patterns are separated from the light Li in different regions based on the distance it has traveled. Different colors (or wavelength distributions) are presented on unit pixels, which have patterns similar to the Bayer pattern, and are formed at optical distances Z1, Z2, Z3, and Z4. In Figure 4, the unit pixels are represented by PU1 at distance Z1, PU2 at distance Z2, PU3 at distance Z3, and PU4 at distance Z4. The color of each unit pixel is a mixture of red, green, and blue in different proportions. This is only an example, and in another example, unit pixels represented by green, blue, and green and blue can be formed at specific locations. Figure 5 In the diagram, the patterned structure PS is shown as having a cylindrical shape, but the patterned structure PS is not limited to this. The patterned structure PS can be a nanopillar with various cross-sectional shapes, such as polygons, ellipses, toroides, polygonal rings, and crosses.

[0103] exist Figures 6A to 6D In this context, S1 refers to the spectrum incident on the first photosensitive unit 110 and the fourth photosensitive unit 140, S2 refers to the spectrum incident on the second photosensitive unit 120, and S3 refers to the spectrum incident on the third photosensitive unit 130. Using C... 1k C 2k and C 3kThis represents the color (or wavelength distribution) sensed by the first photosensitive unit 110, the second photosensitive unit 120, the third photosensitive unit 130, and the fourth photosensitive unit 140 based on the incident spectrum. k is an index used to represent distances Z1, Z2, Z3, and Z4, with 1, 2, 3, and 4.

[0104] Color (or wavelength distribution) C ik (i = 1, 2, and 3, k = 1, 2, 3, and 4) can be different from each other, color C ik Some of them can be very similar to each other, or have the same color C. ik Some of them can be red, green, and blue.

[0105] As mentioned above, compared to using only three colors (i.e., red, green, and blue), when using multiple sets of optical signals sensed at different distances to recover the color of an object, reproduction can be achieved with high spectral sensitivity.

[0106] Existing RGB-based graphics techniques have limitations because color is represented by a simple summation of the weights of the RGB spectra. Therefore, it is difficult to apply RGB-based graphics techniques to various lighting environments or media. Furthermore, obtaining global multispectral density to increase color reproducibility may require a large number of channels, which could reduce spatial resolution.

[0107] Since the image sensor 1000 of the example embodiment acquires an image from a set of multiple light signals obtained by changing the optical distance OL, the color reproducibility of the image sensor 1000 can be improved without reducing the spatial resolution of the image sensor 1000.

[0108] Figure 7 This is a flowchart illustrating the image acquisition process of an image sensor 1000 according to an example embodiment.

[0109] The processor 1040 controls the variable sandwich element 500 to form multiple different optical distances (S810). The optical distance can be determined by considering the light collection pattern based on the propagation distance of light with a phase distribution immediately following the path through the dichroic lens array 700. The light collection pattern based on the propagation distance can depend on the wavelength λ of the incident light and the pixel size (p) of the photodetector 100. The variable range of the optical distance can be determined by considering the light collection pattern based on the propagation distance. The minimum optical distance can be, for example, about 1λ or greater. The pixel size (p) can be expressed as the distance between the centers of adjacent photosensitive units. For example, the minimum optical distance can be in the range of about 1λ or greater, or in the range of about 1p to about 3p. For example, the variable optical distance can be in the range of about 500 nm to about 5 μm.

[0110] The processor 1040 can change the physical distance between the photodetector 100 and the dichroic lens array 700 according to the type of the variable sandwich element 500, or it can apply a signal to the variable sandwich element 500 to change the refractive index of the medium between the photodetector 100 and the dichroic lens array 700. When the optical distance is set by the operation of the variable sandwich element 500, the photodetector 100 senses a light signal at that optical distance (S830). In this way, multiple sets of optical signals can be obtained for multiple optical distances. The processor 1040 can perform calculations using these light signals to obtain image data (S850), and in this process, spectral data previously obtained according to the optical distance between the dichroic lens array 700 and the photodetector 100 can be used. That is, as Figures 6A to 6D As shown, the color arrangement (wavelength distribution) of a unit pixel can vary according to the optical distance, and unit pixel data can be pre-prepared according to each of a plurality of optical distances set by the operation of the variable interlayer element 500. Artificial intelligence (AI) based computing techniques can be used for its calculations. Since image information included in the incident light is acquired by using a plurality of optical signal sets proportional to the number of set optical distances, when the photodetector 100 includes a Q×Q unit array, data corresponding to m (Q×Q) arrays can be obtained, where m refers to the number of optical distances.

[0111] Reference Figures 8 to 11 An example configuration of a variable sandwich element and an image sensor including the variable sandwich element is described based on an example embodiment.

[0112] Figure 8 This is a schematic cross-sectional view of the pixel array configuration of an image sensor 1001 according to another example embodiment.

[0113] The pixel array 1101 includes a dichroic lens array 700, a photodetector 100, and a variable sandwich element.

[0114] The variable sandwich element may include a microelectromechanical system (MEMS) actuator 501 configured to change the physical distance S between the dichroic lens array 700 and the photodetector 100. The medium between the dichroic lens array 700 and the photodetector 100 may be air, thus providing a support layer 710 for supporting the patterned structure PS.

[0115] The support layer 710 and the photodetector 100 are electromechanically connected to the MEMS actuator 501, such that the position of the support layer 710 relative to the photodetector 100 can be changed according to the operation of the MEMS actuator 501. Therefore, the physical distance S between the dichroic lens array 700 and the photodetector 100 can be adjusted.

[0116] Figure 9 This is a schematic cross-sectional view of the pixel array configuration of an image sensor 1002 according to another example embodiment.

[0117] The pixel array 1102 includes a dichroic lens array 700, a photodetector 100, and a variable sandwich element 502.

[0118] The variable sandwich element 502 includes: a deformable structure 522, the deformable material comprising a deformable material and the shape of which can change in response to an electrical signal to change the physical distance S between the dichroic lens array 700 and the photodetector 100; and a signal application unit 525 configured to apply an electrical signal to the deformable structure 522.

[0119] The deformable material included in the deformable structure 522 can be, for example, a shape memory alloy (SMA) or an electroactive polymer. The deformable structure 522 can be embodied in various forms, and a specific shape of the deformable structure 522 is not shown. The deformable structure 522 can have various shapes for combination with a member having a predetermined shape and fixing the deformable material. However, the deformable structure 522 is not limited to this, and in another example, the deformable structure 522 can be formed entirely of the deformable material. The shape of the deformable material can change in response to a signal applied from the signal application unit 525, thus changing the physical distance S between the photodetector 100 and the dichroic lens array 700.

[0120] Figure 10 This is a schematic cross-sectional view of the pixel array configuration of an image sensor 1003 according to another example embodiment.

[0121] The pixel array 1103 includes a dichroic lens array 700, a photodetector 100, and a variable sandwich element 503.

[0122] The variable sandwich element 503 includes: a frame structure 533 including a storage region RA and a variable height region VA; and a signal application unit 535 configured to move optical fluid FL from the storage region RA to the variable height region VA.

[0123] The variable height region VA is the area between the dichroic lens array 700 and the photodetector 100, and may include a stretchable membrane 532 and a fixing member 531 configured to support the stretchable membrane 532 under stretching deformation. The stretchable membrane 532, the fixing member 531, the storage area RA, and the variable height region VA may form a frame structure 533.

[0124] The signal application unit 535 can apply hydraulic pressure to the storage area RA to move the optical fluid FL to the variable height area VA. Alternatively, additional elements such as electrodes for moving the fluid can be provided in the storage area RA or the variable height area VA, so that the optical fluid FL can be moved when the signal application unit 545 applies an electrical signal to the additional elements.

[0125] When the optical fluid FL flows between the storage region RA and the variable height region VA, the stretchable film 532 of the variable height region VA can be stretched or contracted according to the amount of optical fluid FL, thus adjusting the height of the variable height region VA. When the height of the variable height region VA is adjusted, the physical distance S between the dichroic lens array 700 and the photodetector 100 can be adjusted.

[0126] although Figure 10 A support layer 710 configured to support a patterned structure PS is shown, but the image sensor 1003 is not limited to this. For example, the support layer 710 may be omitted, and the patterned structure PS may be supported by a stretchable membrane 532.

[0127] Figure 11 This is a schematic cross-sectional view illustrating the pixel array configuration of an image sensor 1004 according to another example embodiment.

[0128] The pixel array 1104 includes a dichroic lens array 700, a photodetector 100, and a variable sandwich element 504.

[0129] The variable interlayer element 504 includes: a variable refractive index layer 543 having a refractive index that varies in response to a signal input from the outside; and a signal application unit 545 configured to apply an electrical signal to the variable refractive index layer 543. Transparent electrodes 541 and 542 may be disposed on the upper and lower surfaces of the variable refractive index layer 543.

[0130] The variable refractive index layer 543 may include a material whose optical properties change in response to an external signal. The external signal may be an electrical signal. The variable refractive index layer 543 may include, for example, an electro-optic material having an effective dielectric constant that changes in response to an electrical signal. Examples of materials that may be included in the variable refractive index layer 543 may include LiNbO3, LiTaO3, potassium niobate tantalate (KTN), lead zirconate titanate (PZT), and liquid crystals, and may also include various polymer materials with electro-optic properties. The external signal is not limited to an electrical signal; for example, the variable refractive index layer 543 may include VO2, VO2O3, EuO, MnO, CoO, CoO2, LiCoO2, Ca2RuO4, etc., which undergo a phase transition at a specific temperature or higher in response to heat applied thereto and thus change their refractive index.

[0131] When the refractive index of the variable refractive index layer 543 changes in response to a signal applied from the signal application unit 545, the optical distance, represented by the product of the refractive index and the physical distance S, also changes.

[0132] Figure 12 This is an example plan view showing a unit pattern array of a dichroic lens array 701 disposed in an image sensor according to another example embodiment.

[0133] The dichroic lens array 701 can have the same... Figure 4A The pixel array shown corresponds to a Bayer-like pattern and may include quadrant regions, which include a first region 711 corresponding to a first pixel P1, a second region 721 corresponding to a second pixel P2, a third region 731 corresponding to a third pixel P3, and a fourth region 741 corresponding to the first pixel P1. This unit pattern array can be repeatedly arranged in a first direction (X-direction) and a second direction (Y-direction). Each region can be divided into multiple sub-regions, and the pattern structure PS can be arranged at the intersection of the boundaries of the sub-regions. Figure 12 An example is shown where: each region has nine sub-regions; pattern structures PS are arranged at grid points defining the nine sub-regions; pattern structures PS are not arranged at the center of each of the first region 711, second region 721, third region 731, and fourth region 741; and four pattern structures PS of the same size form the central portion of each of the first region 711, second region 721, third region 731, and fourth region 741. Pattern structures PS in the peripheral portions are arranged on the boundaries between regions. The pattern structures PS are denoted by r1 to r9 according to their positions in the unit pattern array.

[0134] Reference Figure 12The pattern structure r1, located in the central portion of the first region 711 corresponding to the first pixel P1, has a larger cross-sectional area than the peripheral pattern structures r5, r6, and r9. Similarly, the pattern structure r4, located in the central portion of the fourth region 741 corresponding to the first pixel P1, also has a larger cross-sectional area than the peripheral pattern structures r7, r8, and r9. The cross-sectional sizes of the pattern structures r1 and r4 located in the central portions of the first and fourth regions 711 and 741 corresponding to the first pixel P1 can be larger than the cross-sectional sizes of the pattern structure r2 located in the central portion of the second region 721 corresponding to the second pixel P2 and the pattern structure r3 located in the central portion of the third region 731 corresponding to the third pixel P3. The cross-sectional area of ​​the pattern structure r2 located in the central portion of the second region 721 corresponding to the second pixel P2 can be larger than the cross-sectional area of ​​the pattern structure r3 located in the central portion of the third region 731 corresponding to the third pixel P3.

[0135] The pattern structures PS of the second region 721 and the third region 731 can be arranged symmetrically in the first direction (X direction) and the second direction (Y direction), and the pattern structures PS of the first region 711 and the fourth region 741 can be arranged asymmetrically in the first direction (X direction) and the second direction (Y direction). In other words, the pattern structures PS of the second region 721 and the third region 731 corresponding to the second pixel P2 and the third pixel P3, respectively, can be arranged according to the distribution rules in the first direction (X direction) and the second direction (Y direction), and the pattern structures PS of the first region 711 and the fourth region 741 corresponding to the first pixel P1 can be arranged according to different distribution rules in the first direction (X direction) and the second direction (Y direction).

[0136] The cross-sectional area of ​​pattern structure r5 located at the boundary of the first region 711 adjacent to the second region 721 in the first direction (X direction) is different from the cross-sectional area of ​​pattern structure r6 located at the boundary of the first region 711 adjacent to the third region 731 in the second direction (Y direction). Furthermore, the cross-sectional area of ​​pattern structure r7 located at the boundary of the fourth region 741 adjacent to the third region 731 in the first direction (X direction) is different from the cross-sectional area of ​​pattern structure r8 located at the boundary of the fourth region 741 adjacent to the second region 721 in the second direction (Y direction).

[0137] However, the cross-sectional area of ​​the pattern structure r5 located at the boundary of the first region 711 adjacent to the second region 721 in the first direction (X direction) is equal to the cross-sectional area of ​​the pattern structure r8 located at the boundary of the fourth region 741 adjacent to the second region 721 in the second direction (Y direction), and the cross-sectional area of ​​the pattern structure r6 located at the boundary of the first region 711 adjacent to the third region 731 in the second direction (Y direction) is equal to the cross-sectional area of ​​the pattern structure r7 located at the boundary of the fourth region 741 adjacent to the third region 731 in the first direction (X direction).

[0138] In addition, the pattern structure r9 arranged at the four corners of each of the first region 711, the second region 721, the third region 731 and the fourth region 741 (i.e., at the positions where the four regions meet each other) has the same cross-sectional area.

[0139] As described above, pattern structures PS are arranged with fourfold symmetry in the second region 721 and the third region 731, which correspond to the second pixel P2 and the third pixel P3, respectively, and with twofold symmetry in the first region 711 and the fourth region 741, which correspond to the first pixel P1, such that the pattern structures PS in the first region 711 and the fourth region 741 can be rotated 90 degrees relative to each other. This form is also applicable to... Figure 13 and Figure 14 The example embodiment shown.

[0140] Figure 13 This is a schematic plan view of a dichroic lens array 702 disposed in a pixel array of an image sensor according to another example embodiment.

[0141] In this example embodiment, each of the first region 712, second region 722, third region 732, and fourth region 742 included in the dichroic lens array 702 can be divided into multiple sub-regions, and at least a portion of a pattern structure PS can be located in each of the sub-regions. The pattern structure PS may not be arranged on the central portions of some of the sub-regions, but may only be arranged on the boundaries of the sub-regions. Although four sub-regions are shown for each region, this is a non-limiting example.

[0142] Furthermore, in this example embodiment, the pattern structures PS of the second region 722 and the third region 732 can be arranged according to the same arrangement rules in the first direction (X direction) and the second direction (Y direction), and the pattern structures PS of the first region 712 and the fourth region 742 can be arranged according to different arrangement rules in the first direction (X direction) and the second direction (Y direction). The arrangement of the pattern structures PS in the first region 712 and the arrangement of the pattern structures PS in the fourth region 742 can be rotated 90 degrees relative to each other.

[0143] The above description has described a dichroic lens array comprising a patterned structure having cylindrical shapes and arranged in a definable form. However, dichroic lens arrays with free patterns that are not definable can also be realized. Examples of various free forms that can be employed in dichroic lens arrays will be described below.

[0144] Figure 14 This is a schematic plan view of a dichroic lens array 703 disposed in a pixel array of an image sensor according to another example embodiment.

[0145] Figure 14 The dichroic lens array 703 shown can be applied to image sensors with pixels arranged in a Bayer pattern, and Figure 14 Four regions of the unit pattern array are shown. The dichroic lens array 703 includes a first pattern structure PS1 formed in a first region 713, a second pattern structure PS2 formed in a second region 723 and having a shape different from that of the first pattern structure PS1, a third pattern structure PS3 formed in a third region 733 and having a shape different from that of the first pattern structure PS1 and the second pattern structure PS2, and a fourth pattern structure PS4 formed in a fourth region 743.

[0146] The first pattern structure PS1 includes: a first dielectric D1 having a first refractive index and disposed in a first form; and a second dielectric D2 having a second refractive index less than the first refractive index and filling the gaps of the first dielectric D1 having the first form. The first form is a free form that is not limited in definition, except that the first dielectric D1 is present in any vertical cross-section of the first pattern structure PS1. Here, the term "vertical cross-section" refers to a cross-section taken along a straight line in the XY plane.

[0147] Similarly, the second patterned structure PS2 includes: a third dielectric D3 having a third refractive index and disposed in a second form; and a fourth dielectric D4 having a fourth refractive index less than the third refractive index and filling the gaps of the third dielectric D3 having the second form. The second form can be determined such that the third dielectric D3 can exist in any vertical cross-section of the second patterned structure PS2.

[0148] Similarly, the third patterned structure PS3 includes: a fifth dielectric D5 having a fifth refractive index and disposed in a third form; and a sixth dielectric D6 having a sixth refractive index less than the fifth refractive index and filling the gaps of the fifth dielectric D5 in the third form. The third form can be determined such that the fifth dielectric D5 can exist in any vertical cross-section of the third patterned structure PS3.

[0149] Similarly, the fourth pattern structure PS4 includes: a seventh dielectric D7 having a seventh refractive index and arranged in a fourth form; and an eighth dielectric D8 having an eighth refractive index less than the seventh refractive index and filling the gaps of the seventh dielectric D7 in the fourth form. The fourth form can be determined such that the seventh dielectric D7 can exist in any vertical cross-section of the fourth pattern structure PS4. The fourth pattern structure PS4 can have a form rotated 90 degrees from the first pattern structure PS1.

[0150] The first dielectric D1, third dielectric D3, fifth dielectric D5, and seventh dielectric D7 can all comprise the same material, and the second dielectric D2, fourth dielectric D4, sixth dielectric D6, and eighth dielectric D8 can all comprise the same material. For example, the first dielectric D1, third dielectric D3, fifth dielectric D5, and seventh dielectric D7 can comprise dielectric materials with high refractive index and low absorptivity in the visible light band, such as TiO2, GaN, SiN3, ZnS, ZnSe, or Si3N4. Alternatively, the second dielectric D2, fourth dielectric D4, sixth dielectric D6, and eighth dielectric D8 can comprise dielectric materials with low refractive index and low absorptivity in the visible light band, such as air, SiO2, or silanol-based glass (e.g., siloxane spin-coated glass (SOG)). For example, when the second dielectric D2, fourth dielectric D4, sixth dielectric D6, and eighth dielectric D8 are air, they can be easily... Figure 14 The first dielectric D1, the third dielectric D3, the fifth dielectric D5, and the seventh dielectric D7 are etched in the manner shown to form a dichroic lens array 703.

[0151] Figure 15A , Figure 15B , Figure 15C and Figure 15D They are shown respectively Figure 14 The first region 713, the second region 723, the third region 733 and the fourth region 743 of the dichroic lens array 703.

[0152] like Figure 15A As shown, the first pattern structure PS1 of the first region 713 can have a dual symmetry form. For example, the first pattern structure PS1 of the first region 713 can be symmetrical with respect to a first axis (I) defined in the Y direction, and can also be symmetrical with respect to a second axis II defined in the X direction.

[0153] like Figure 15BAs shown, the second pattern structure PS2 of the second region 723 can have a four-fold symmetry form. For example, the second pattern structure PS2 of the second region 723 can be symmetrical with respect to a first axis (I) defined in the Y direction, a second axis II defined in the X direction, a third axis III defined in the diagonal direction, and a fourth axis IV defined in the diagonal direction.

[0154] like Figure 15C As shown, the third pattern structure PS3 of the third region 733 can have a four-fold symmetry form. For example, the third pattern structure PS3 of the third region 733 can be symmetric with respect to a first axis (I) defined in the Y direction, a second axis II defined in the X direction, a third axis III defined in the diagonal direction, and a fourth axis IV defined in the diagonal direction.

[0155] like Figure 15D As shown, the fourth pattern structure PS4 of the third region 743 can be symmetrical with respect to the first axis (I) defined in the Y direction and the second axis II defined in the X direction. The fourth pattern structure PS4 of the fourth region 743 can have the same form as that obtained by rotating the first pattern structure PS1 of the first region 713 by 90 degrees.

[0156] The symmetry of each of the first pattern structure PS1, second pattern structure PS2, third pattern PS3 and fourth pattern structure PS4 respectively set in the first region 713, the second region 723, the third region 733 and the fourth region 743 is determined by taking into account the arrangement of the corresponding pixels and the adjacent pixels.

[0157] The four regions of the unit pattern array (i.e., the first region 713, the second region 723, the third region 733, and the fourth region 743) correspond to respectively Figure 4A The pixel arrangement shown includes a first pixel P1, a second pixel P2, a third pixel P3, and a fourth pixel P4. In this arrangement, the first pixel P1 is adjacent to the second pixel P2 and the third pixel P3 in the first direction (X direction) and the second direction (Y direction), respectively. The first pixel P1 has the second pixel P2 as its adjacent pixel in the first direction (X direction) and the third pixel P3 as its adjacent pixel in the second direction (Y direction). By considering the symmetry of the pixel arrangement, the symmetry of each of the first pattern structure PS1, the second pattern PS2, the third pattern structure PS3, and the fourth pattern structure PS4 respectively provided in the first region 713, the second region 723, the third region 733, and the fourth region 743 can be determined.

[0158] Figure 14The shape of the dichroic lens array 703 shown is an example, and the dichroic lens array 703 can have any other shape, as long as the light has the desired phase distribution immediately after passing through the dichroic lens array 703.

[0159] The shape of the dichroic lens array 703 that satisfies the target phase distribution can be automatically designed through various computer simulations. For example, the shape of the pattern structure of each region can be designed using natural heuristic algorithms such as genetic algorithms, particle swarm optimization algorithms, and ant colony optimization algorithms, or using reverse engineering methods based on adjoint optimization algorithms.

[0160] When designing the dichroic lens array 703, the pattern shape of each region of each unit pattern array can be optimized while evaluating the performance of candidate dichroic lens arrays based on evaluation factors such as dichroic spectrum, optical efficiency, and signal-to-noise ratio. For example, the pattern shape of each region can be optimized by pre-determining a target value for each evaluation factor and minimizing the sum of differences from the target values ​​of the evaluation factors. Alternatively, performance metrics can be prepared for the evaluation factors, and the pattern shape of each region can be optimized to obtain the maximum performance metric.

[0161] Figure 16 This is an example plan view illustrating a unit pattern array of a dichroic lens array applicable to a Bayer patterned image sensor according to another example embodiment, and Figure 17 This is an example plan view illustrating a unit pattern array of a dichroic lens array applicable to a Bayer patterned image sensor according to another example embodiment.

[0162] Optimized in digitized binary form of a 14×14 matrix Figure 14 Each region of the unit pattern array is shown, and optimized in digitized binary form as a 16×16 matrix. Figure 16 Each region of the unit pattern array shown. Therefore, Figure 14 The unit pattern array of the dichroic lens array 703 shown has a 28×28 matrix form, and Figure 16 The unit pattern array of the dichroic lens array shown has a 32×32 matrix form. In this case, as line A-A' moves in the Y direction or line B-B' moves in the X direction, Figure 14 and Figure 16 The vertical cross-sectional shape of each of the regions shown can vary discontinuously.

[0163] In addition, such as Figure 17 As shown, each region of the unit pattern array can be optimized in the form of a non-digital continuous curve. In this case, as... Figure 14 As shown, the vertical cross-sectional shape of each region changes continuously as line A-A' moves in the Y direction or line B-B' moves in the X direction.

[0164] Figures 12 to 17 The shape and arrangement of the pattern structure PS of the dichroic lens array shown are examples, and various modifications can be made therein according to the desired target phase distribution. Furthermore, the dichroic lens array can be combined with, for example... Figures 8 to 11 The various combinations of variable sandwich elements are shown.

[0165] The image sensor described above can be used in various electronic devices. Because it provides object information with high spectral sensitivity, it can be used in spectroscopic devices, inspection devices, imaging devices, etc. Non-limiting examples of such electronic devices may include smartphones, cellular phones, mobile phones, personal digital assistants (PDAs), laptop computers, personal computers (PCs), various portable devices, and other mobile or non-mobile computing devices.

[0166] For example, Figure 18 This is a schematic block diagram illustrating an electronic device including an image sensor according to an example embodiment. The electronic device includes an image sensor 1000, a processor 2200, a memory 2300, a display 2400, and a bus 2500. Under the control of the processor 2200, the image sensor 1000 acquires image information about an external object and provides this image information to the processor 2200. The processor 2200 can store the image information received from the image sensor 1000 in the memory 2300 via the bus 2500. The processor 2200 can output the image information stored in the memory 2300 to the display 2400 to display the image information to a user. Furthermore, as described above, the processor 2200 can process the image information received from the image sensor 1000 in various ways.

[0167] Figures 19 to 29 Various examples of multimedia devices that are electronic devices employing image sensors, according to example embodiments, are shown.

[0168] The image sensor in the example embodiment can be applied to various multimedia devices with image capture capabilities. For example, such as Figure 19 As shown, an image sensor can be applied to camera 2000. Camera 2000 can be a digital camera or a digital camcorder.

[0169] Reference Figure 20 The camera 2000 may include an imaging unit 2100, an image sensor 1000, and a processor 2200.

[0170] Imaging unit 2100 forms an optical image by converging light reflected from object OBJ. Imaging unit 2100 may include objective lens 2010, lens driving unit 2120, aperture 2130, and aperture driving unit 2140. Although for ease of illustration... Figure 20 Only one lens element is shown, but objective lens 2010 may include multiple lens elements of different sizes and shapes. Lens drive unit 2120 can communicate with processor 2200 to obtain information about focus detection and can adjust the position of objective lens 2010 based on control signals received from processor 2200. Lens drive unit 2120 can move objective lens 2010 to adjust the distance between objective lens 2010 and object OBJ, or it can adjust the position of the lens elements of objective lens 2010. When lens drive unit 2120 drives objective lens 2010, focusing on object OBJ can be adjusted. Camera 2000 may have autofocus (AF) functionality.

[0171] Additionally, the aperture drive unit 2140 can communicate with the processor 2200 to obtain information about the amount of light, and can adjust the aperture 2130 according to the control signals received from the processor 2200. For example, the aperture drive unit 2140 can increase or decrease the aperture 2130 to adjust the amount of light entering the camera 2000 through the objective lens 2010, and can adjust the aperture opening time of the aperture 2130.

[0172] Image sensor 1000 can generate electrical image signals based on the intensity of incident light. Image sensor 1000 may include pixel array 1100, timing controller 1010, and output circuitry 1030. Image sensor 1000 may also include, for example... Figure 1 The line decoder is shown. Light passing through objective lens 2010 and aperture 2130 can form an image of object OBJ on the light-receiving surface of pixel array 1100. Pixel array 1100 can be a CCD or CMOS configured to convert optical signals into electrical signals. Pixel array 1100 may include additional pixels for performing AF functions or distance measurement functions. Additionally, pixel array 1100 may include reference... Figures 12 to 17 The described dichroic lens arrays 700, 701, 702, and 703, as well as combinations or modifications thereof, may also include references. Figures 8 to 11 Any of the variable sandwich elements 501, 502, 503 and 504 described.

[0173] The processor 2200 can control the overall operation of the camera 2000 and can have image processing capabilities. For example, the processor 2200 can provide control signals for operating devices such as the lens drive unit 2120, the aperture drive unit 2140, and the timing controller 1010.

[0174] As described above, the pixel array 1100 of the image sensor 1000 has the following structure: the optical distance between the photodetector and the dichroic lens array is adjustable, so that the image sensor 1000 can use multiple sets of light signals obtained at multiple optical distances to form an image. Therefore, the camera 2000 including the image sensor 1000 can provide a high-quality image with high color purity and high reproducibility.

[0175] Additionally, according to the example embodiment, the image sensor can be applied to, for example... Figure 21 The mobile phone or smartphone 3000 shown is as follows: Figure 22 The tablet or smart tablet 3100 shown, such as Figure 23 The laptop computer 3200 shown, or as... Figure 24 The television or smart TV 3300 shown is an example. For instance, a smartphone 3000 or a smart tablet 3100 may include multiple high-resolution cameras, each equipped with a high-resolution image sensor. High-resolution cameras can be used to extract information about the depth of objects in an image, adjust a defocused image, or automatically detect objects in an image.

[0176] In addition, image sensors can be applied to, for example Figure 25 The smart refrigerator 3400 shown is an example. Figure 26 The security camera 3500 shown, such as Figure 27 The robot 3600 shown is as follows: Figure 28 Examples include medical cameras like 3700. For instance, a smart refrigerator 3400 can automatically identify food stored within it using an image sensor and can provide users with information about the food stored in the refrigerator via their smartphones, as well as information about food placed in or removed from it. A security camera 3500 can provide ultra-high-resolution images and can be highly sensitive enough to detect objects or people even in images captured in dark environments. A robot 3600 can be deployed to disaster or industrial sites inaccessible to humans and can provide high-resolution images of the scene. A medical camera 3700 can provide high-resolution images for diagnosis or surgery and can have a dynamically adjustable field of view.

[0177] In addition, such as Figure 29As shown, an image sensor can be applied to vehicle 3800. For example, vehicle 3800 may include multiple vehicle cameras 3810, 3820, 3830, and 3840 arranged in various locations. Each of vehicle cameras 3810, 3820, 3830, and 3840 may include an image sensor according to an example embodiment. Vehicle 3800 can provide the driver with various information about the interior or surrounding environment of vehicle 3800 by using vehicle cameras 3810, 3820, 3830, and 3840, and can provide information for autonomous driving by automatically identifying objects or people in the images.

[0178] Although an image sensor including a dichroic lens array and an electronic device including the image sensor have been described with reference to the accompanying drawings and exemplary embodiments, the image sensor and electronic device are merely examples, and those skilled in the art will understand that various changes and equivalent embodiments can be made therefrom. Therefore, the exemplary embodiments described herein should be considered descriptive only and not for limiting purposes. The scope of this disclosure is not limited by the foregoing description but by the appended claims, and all differences within the equivalent scope of this disclosure should be considered to be included within the scope of this disclosure.

[0179] As described above, according to one or more of the above example embodiments, the image sensor is able to adjust the optical distance between the photodetector and the dichroic lens array configured to separate the incident light according to the wavelength of the incident light.

[0180] Because the image sensor acquires optical information from different spectra formed according to multiple optical distances, it can have high spectral sensitivity reproducibility compared to using only three colors (i.e., red, green, and blue).

[0181] Imaging devices that use image sensors can provide high-quality images.

[0182] It should be understood that the exemplary embodiments described herein should be considered descriptive only and not for limiting purposes. The description of features or aspects in each embodiment should generally be regarded as applicable to other similar features or aspects in other embodiments. Although exemplary embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope defined by the claims.

Claims

1. An image sensor, comprising: A photodetector, comprising multiple photosensitive units configured to sense light; A dichroic lens array is disposed above the photodetector and includes multiple patterned structures. The dichroic lens array is configured to collect light with different wavelength spectra onto at least two of the multiple photosensitive units. processor; as well as A variable interlayer element is configured to adjust the optical distance between the photodetector and the dichroic lens array based on a signal from the processor.

2. The image sensor according to claim 1, wherein, The variable sandwich element is also configured to adjust the physical distance between the photodetector and the dichroic lens array.

3. The image sensor according to claim 2, wherein, The variable sandwich element includes a microelectromechanical system (MEMS) actuator configured to drive the position of the dichroic lens array.

4. The image sensor according to claim 2, wherein, The variable sandwich element includes: Deformable structures include deformable materials capable of changing shape according to an electrical signal applied thereto; and A signal application unit is configured to apply the electrical signal to the deformable structure.

5. The image sensor according to claim 4, wherein, The deformable material includes shape memory alloys or electroactive polymers.

6. The image sensor according to claim 2, wherein, The variable sandwich element includes: The frame structure includes a variable-height region with a stretchable membrane; and a storage region storing optical fluid to be introduced into the variable-height region; and A signal application unit is configured to apply a signal to move the optical fluid between the storage region and the variable height region for stretching or contracting the stretchable membrane.

7. The image sensor according to claim 1, wherein, The variable sandwich element includes: A variable refractive index layer having a refractive index that can vary according to an electrical signal applied thereto; and A signal application unit is configured to apply the electrical signal to the variable refractive index layer.

8. The image sensor according to claim 7, wherein, The variable refractive index layer includes LiNbO3, LiTaO3, potassium niobate tantalate KTN, lead zirconate titanate PZT, VO2, VO2O3, EuO, MnO, CoO, CoO2, LiCoO2, Ca2RuO4, or liquid crystal.

9. The image sensor according to claim 1, wherein, The processor is also configured to: Controlling the variable sandwich element to form multiple optical distances that are different from each other, and Image data is obtained by processing signals sensed by the photodetector at the plurality of optical distances.

10. The image sensor according to claim 9, wherein, The processor is configured to perform calculations on the image data using a spectral dataset based on the optical distance between the photodetector and the dichroic lens array.

11. The image sensor according to claim 1, wherein, The dichroic lens array includes multiple photosensitive units respectively facing the photodetector and includes multiple regions with at least one patterned structure. The plurality of regions are configured to collect light with different wavelength spectra onto adjacent photosensitive units among the plurality of photosensitive units.

12. The image sensor according to claim 11, wherein, The plurality of regions includes a first region, a second region, a third region, and a fourth region, wherein the first region, the second region, the third region, and the fourth region each include at least one of the plurality of pattern structures, and The plurality of photosensitive units include a first photosensitive unit, a second photosensitive unit, a third photosensitive unit, and a fourth photosensitive unit, wherein the first photosensitive unit, the second photosensitive unit, the third photosensitive unit, and the fourth photosensitive unit respectively face the first region, the second region, the third region, and the fourth region.

13. The image sensor according to claim 12, wherein, The image sensor has a pixel arrangement structure in which a plurality of unit pixels are arranged in a Bayer pattern according to the optical distance, and the plurality of unit pixels include red, green and blue pixels.

14. The image sensor according to claim 12, wherein, The shape, arrangement, and size of the pattern structures respectively set in the first region, the second region, the third region, and the fourth region are determined such that, immediately after passing through the dichroic lens array, light having a first wavelength has a phase difference of 2Nπ at positions corresponding to the center portions of the first and fourth photosensitive units, and a phase difference of (2N-1)π at positions corresponding to the center portions of the second and third photosensitive units, where N is an integer greater than 0.

15. The image sensor according to claim 12, wherein, The shape, arrangement, and size of the pattern structures respectively set in the first region, the second region, the third region, and the fourth region are determined such that, immediately after passing through the dichroic lens array, light having a second wavelength has a phase difference of 2Mπ at the position corresponding to the center portion of the second photosensitive unit, a phase difference of (2M-1)π at the positions corresponding to the center portions of the first and fourth photosensitive units, and a phase difference greater than (2M-2)π and less than (2M-1)π at the position corresponding to the center portion of the third photosensitive unit, where M is an integer greater than 0.

16. The image sensor according to claim 12, wherein, The shape, arrangement, and size of the pattern structures respectively set in the first region, the second region, the third region, and the fourth region are determined such that, immediately after passing through the dichroic lens array, light with a third wavelength has a phase difference of 2Lπ at the position corresponding to the center portion of the third photosensitive unit, a phase difference of (2L-1)π at the positions corresponding to the center portions of the first and fourth photosensitive units, and a phase difference greater than (2L-2)π and less than (2L-1)π at the position corresponding to the center portion of the second photosensitive unit, where L is an integer greater than 0.

17. The image sensor according to claim 12, wherein, The multiple patterned structures include multiple nanopillars, and The nanopillars disposed in the first region, the nanopillars disposed in the second region, the nanopillars disposed in the third region, and the nanopillars disposed in the fourth region are different from each other in at least one aspect of shape, size, and arrangement.

18. The image sensor according to claim 17, wherein, Nanopillars are arranged in the regions corresponding to the green pixels in the first region, the second region, the third region, and the fourth region according to different distribution rules in the first direction and the second direction perpendicular to the first direction.

19. The image sensor according to claim 18, wherein, Nanopillars are arranged in the regions corresponding to the blue and red pixels in the first, second, third, and fourth regions according to the symmetrical distribution rules in the first and second directions.

20. The image sensor according to claim 12, wherein, The plurality of pattern structures include a first pattern structure, a second pattern structure, a third pattern structure, and a fourth pattern structure respectively formed in the first region, the second region, the third region, and the fourth region.

21. The image sensor according to claim 20, wherein, The first pattern structure includes a first dielectric and a second dielectric. The first dielectric has a first refractive index and is disposed in a first form. The second dielectric has a second refractive index lower than the first refractive index and fills the gaps in the first dielectric disposed in the first form. The first dielectric exists in any vertical cross-section of the first patterned structure.

22. The image sensor according to claim 20, wherein, The first region and the fourth region correspond to green pixels, the second region corresponds to blue pixels, and the third region corresponds to red pixels. The first pattern structure and the fourth pattern structure have a double symmetry, the second pattern structure and the third pattern structure have a quadruple symmetry, and the fourth pattern structure has a form that is rotated 90 degrees relative to the first pattern structure.

23. A filming device, comprising: The imaging unit is configured to form an optical image by converging light reflected from an object; as well as An image sensor is configured to convert an optical image formed by the imaging unit into an electrical signal. The image sensor includes: A photodetector, comprising multiple photosensitive units configured to sense light; A dichroic lens array, disposed above the photodetector and comprising multiple patterned structures, is configured to collect light with different wavelength spectra onto at least two of the plurality of photosensitive units; and A variable interlayer element is configured to adjust the optical distance between the photodetector and the dichroic lens array based on the received signal.

24. An electronic device including a shooting device, the shooting device comprising: The imaging unit is configured to form an optical image by converging light reflected from an object; as well as An image sensor is configured to convert an optical image formed by the imaging unit into an electrical signal. The image sensor includes: A photodetector, comprising multiple photosensitive units configured to sense light; A dichroic lens array, disposed above the photodetector and comprising multiple patterned structures, is configured to collect light with different wavelength spectra onto at least two of the plurality of photosensitive units; and A variable interlayer element is configured to adjust the optical distance between the photodetector and the dichroic lens array based on the received signal.

Images