Display panel and electronic device comprising the same

Abstract

A display panel and an electronic device including the display panel are provided. The display panel has a transmissive region and an extended display region to enable an image to be rendered in a region where an electronic component is located, and for example to remove or reduce distortion caused by diffracted light in light received by the electronic component when the electronic component is an electronic component that uses light, such as a camera. The display panel includes a substrate, a plurality of first pixel circuits and a plurality of second pixel circuits on the substrate and spaced apart from each other, the transmissive region being between the plurality of first pixel circuits and the plurality of second pixel circuits, and the plurality of first pixel circuits and the plurality of second pixel circuits each including a thin film transistor and a storage capacitor, first display elements and second display elements electrically connected to the first pixel circuits and the second pixel circuits, respectively, and a first phase shift layer between the substrate and the first pixel circuits and the second pixel circuits and having a first light transmittance.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0018569, filed on February 14, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of this disclosure relate to display panels and electronic devices including display panels, and for example, to a display panel whose display area is extended to be able to display images in an area where electronic components are located, and an electronic device including the display panel. Background Technology

[0004] Recently, display devices have been used in various fields. Furthermore, with the reduction in thickness and weight of display devices, their application range has expanded.

[0005] The increased area occupied by the display area in a display device has led to an increase in the functions embedded in or linked to the display device. In order to increase various functions while increasing the area of ​​the display area, display devices that can arrange various components in their display area have been studied. Summary of the Invention

[0006] To add various functions to a display device, electronic components such as cameras or sensors may be located in the display area of ​​the display device. According to one or more embodiments of this disclosure, a display panel and an electronic device including the display panel are provided, the display panel including an extended display area to display images even in the area where the electronic components are located. However, this is merely an example, and one or more embodiments of this disclosure are not limited thereto.

[0007] Additional aspects of the embodiments will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0008] According to one aspect of an embodiment of the present disclosure, a display panel includes a transmissive region and comprises: a substrate; a plurality of first pixel circuits and a plurality of second pixel circuits, spaced apart from each other on the substrate, and each including a thin-film transistor and a storage capacitor; a plurality of first display elements, each electrically connected to the plurality of first pixel circuits; a plurality of second display elements, each electrically connected to the plurality of second pixel circuits; and a first phase-shifting layer, located between the substrate and the plurality of first pixel circuits and the plurality of second pixel circuits, and having a first transmittance.

[0009] The first phase-shifting layer may include at least one selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides.

[0010] The first transmittance of the first phase-shifting layer in the visible light band can be in the range of about 3 to about 80.

[0011] The first thickness of the first phase-shifting layer can have approximately [a certain value]. to approximately The value within the range.

[0012] The first refractive index of the first phase-shifting layer may be in the range of about 1.5 to about 4.0, and the first extinction coefficient of the first phase-shifting layer may be in the range of about 0.01 to about 2.0.

[0013] The first phase shift layer may include a first sub-phase shift layer overlapping with the first pixel circuit and a second sub-phase shift layer overlapping with the second pixel circuit, and the first sub-phase shift layer and the second sub-phase shift layer may be spaced apart from each other.

[0014] The display panel may also include a light-blocking layer on the first phase-shifting layer, wherein the light-blocking layer may have a second light transmittance that is less than the first light transmittance.

[0015] The edge of the first phase-shifting layer can be closer to the transmission region than the edge of the light-blocking layer, and a step difference can be formed between the edge of the first phase-shifting layer and the edge of the light-blocking layer.

[0016] The display panel may also include a second phase shift layer on the light-blocking layer and overlapping the light-blocking layer and the first phase shift layer.

[0017] The edge of the second phase-shifting layer can be closer to the transmission region than the edge of the first phase-shifting layer.

[0018] The display panel may also include a second phase shift layer between the first phase shift layer and the light-blocking layer.

[0019] The edge of the first phase-shifting layer can be closer to the transmission region than the edge of the second phase-shifting layer.

[0020] Compared to the edge of the first phase-shifting layer, the edge of the second phase-shifting layer can extend further toward the transmission region.

[0021] Each of the first phase-shifting layer and the second phase-shifting layer may include at least one selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides, and the material or composition ratio of the second phase-shifting layer may be different from that of the first phase-shifting layer.

[0022] The display panel may also include a light-blocking strip layer spaced apart from the light-blocking layer and the transmissive area.

[0023] The display panel may also include an anti-reflective layer below the first phase shift layer, corresponding to each of the plurality of first pixel circuits and the plurality of second pixel circuits.

[0024] According to another aspect of the embodiments of the present disclosure, an electronic device is provided, comprising: a display panel including a transmissive region; and electronic components overlapping the transmissive region, wherein the display panel includes: a substrate; a plurality of first pixel circuits and a plurality of second pixel circuits spaced apart from each other on the substrate and having a transmissive region between the plurality of first pixel circuits and the plurality of second pixel circuits, and each including a thin-film transistor and a storage capacitor; a plurality of first display elements electrically connected to the plurality of first pixel circuits; a plurality of second display elements electrically connected to the plurality of second pixel circuits; and a first phase-shifting layer between the substrate and the plurality of first pixel circuits and the plurality of second pixel circuits and having a first transmittance.

[0025] The electronic device may also include a light-blocking layer on the first phase-shifting layer, wherein the edge of the first phase-shifting layer may be closer to the transmission region than the edge of the light-blocking layer, and the edge of the first phase-shifting layer and the edge of the light-blocking layer may form a step difference.

[0026] The electronic device may also include a second phase shift layer on the first phase shift layer.

[0027] Each of the first phase-shifting layer and the second phase-shifting layer may include at least one selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides, and the material or composition ratio of the second phase-shifting layer may be different from that of the first phase-shifting layer.

[0028] Other aspects and features of the embodiments, in addition to those described above, will become apparent from the following detailed description, claims, and drawings used to implement this disclosure. Attached Figure Description

[0029] The above and other aspects and features of specific embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1 This is a schematic perspective view of an electronic device including a display panel according to an embodiment;

[0031] Figure 2A and Figure 2B This is a schematic cross-sectional view of a portion of an electronic device including a display panel according to an embodiment;

[0032] Figure 3This is an equivalent circuit diagram showing the pixel circuit of an organic light-emitting diode connected to a display panel according to an embodiment;

[0033] Figure 4 This is a schematic plan view of a portion of the first display area of ​​the display panel according to an embodiment;

[0034] Figure 5 This is a schematic plan view of a portion of the second display area of ​​the display panel according to an embodiment;

[0035] Figure 6 This is a schematic cross-sectional view of a portion of the display panel according to an embodiment;

[0036] Figure 7 This is a schematic cross-sectional view of a portion of a display panel according to another embodiment;

[0037] Figure 8 This is a schematic cross-sectional view of a portion of a display panel according to another embodiment;

[0038] Figure 9 yes Figure 8 A schematic enlarged cross-sectional view of a portion of the display panel;

[0039] Figure 10 This is a schematic plan view of a portion of the second display area of ​​a display panel according to another embodiment;

[0040] Figure 11 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment;

[0041] Figure 12 This is a schematic plan view of a portion of the second display area of ​​a display panel according to another embodiment;

[0042] Figure 13 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment;

[0043] Figure 14 This is a schematic plan view of a portion of the second display area of ​​a display panel according to another embodiment;

[0044] Figure 15 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment;

[0045] Figure 16 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment;

[0046] Figure 17 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment;

[0047] Figure 18 This is a schematic plan view of a portion of the second display area of ​​a display panel according to another embodiment;

[0048] Figure 19 A schematic graph showing the amplitude and intensity of transmitted light according to the position of the display panel, based on an embodiment, is shown; and

[0049] Figure 20 This is a schematic cross-sectional view of a portion of a display panel according to another embodiment. Detailed Implementation

[0050] Referring now to embodiments in more detail, examples of which are illustrated in the accompanying drawings, wherein similar reference numerals always refer to similar elements. In this respect, embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to explain aspects of the embodiments described herein. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, a and b, a and c, b and c, all of a, b, and c, or variations thereof.

[0051] The present disclosure will now be described more fully with reference to the accompanying drawings, which illustrate embodiments thereof. Similar reference numerals in the drawings denote similar elements, and therefore, their repeated descriptions will not be repeated.

[0052] It will be understood that although the terms “first,” “second,” etc., may be used in this document to describe various components, these components should not be limited by these terms. These terms are only used to distinguish one component from another.

[0053] As used herein, unless the context clearly indicates otherwise, the singular forms of “a”, “an”, and “the” are also intended to include the plural forms.

[0054] It will be further understood that the terms “comprises” and / or “comprising” as used herein specify the presence of the stated features or components, but do not exclude the presence or addition of one or more other features or components.

[0055] It will be understood that when a layer, area, or component is referred to as being "on" or "formed" on another layer, area, or component, it may be directly or indirectly on or formed on the other layer, area, or component. That is, for example, intermediate layers, areas, or components may exist.

[0056] For ease of illustration, the dimensions of the components in the accompanying drawings may be exaggerated. In other words, since the dimensions and thicknesses of the components in the drawings may be arbitrarily shown for ease of illustration, the following embodiments are not limited thereto.

[0057] When a particular embodiment can be implemented differently, the set or specific order of processes can be executed differently from the described order. For example, two consecutively described processes can be executed substantially simultaneously or in the reverse order of the described order.

[0058] In this specification, expressions such as "A and / or B" indicate A, B, or A and B. Furthermore, expressions such as "at least one of A and B" indicate A, B, or A and B.

[0059] It will be understood that when a component such as a layer, membrane, zone, or plate is referred to as being "connected to" or "attached to" another component, the component may be directly on the other component or an intermediate component may be present thereon. For example, it will be understood that when a component such as a layer, membrane, zone, or plate is referred to as being "electrically connected to" or "electrically connected to" another component, the component may be directly electrically connected to the other component or an intermediate component may be present thereon for indirect electrical connection.

[0060] It will be understood that when a component such as a layer, membrane, region, or plate is referred to as being "on" another component, that component may be directly on the other component or an intermediate component may exist on it. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.

[0061] Figure 1 This is a schematic perspective view of an electronic device 1 including a display panel according to an embodiment.

[0062] Reference Figure 1 The electronic device 1 may include a display area DA and a surrounding area SA outside the display area DA. The electronic device 1 can provide an image via an array of pixels P arranged in two dimensions within the display area DA. Pixels P may be arranged in a first display area DA1 and a second display area DA2, and the arrays of pixels P arranged in the first display area DA1 and the second display area DA2 may be different. For example, since a transmissive area TA (e.g., a light-transmitting area) is located between pixels P arranged in the second display area DA2, the array of pixels P in the second display area DA2 may be different from the array of pixels P in the first display area DA1.

[0063] Electronic device 1 can provide a first image by using light emitted from pixel P in a first display area DA1, and a second image by using light emitted from pixel P in a second display area DA2. In some embodiments, the first image and the second image may be corresponding portions of any one of the images provided by the display areas DA of electronic device 1. In some embodiments, electronic device 1 can provide a first image and a second image that are independent of each other.

[0064] The second display area DA2 may include a transmissive area TA located between pixels P. The transmissive area TA may be an area through which light can pass and which does not contain pixels.

[0065] The surrounding area SA may be an area that does not provide an image and may surround the entire display area DA. Within the surrounding area SA, drivers for providing electrical signals or power to the pixel P may be arranged. Pads may be positioned within the surrounding area SA, which may be areas where electronic devices, printed circuit boards, and / or the like can be electrically connected.

[0066] like Figure 1 As shown, the shape of the second display area DA2 in a plane may be circular (e.g., substantially circular) or elliptical, but this disclosure is not limited thereto. For example, in some embodiments, the shape of the second display area DA2 may be a polygon such as a rectangle or a strip.

[0067] The second display area DA2 may be located on the inner side or one side of the first display area DA1. For example... Figure 1 As shown, the entire second display area DA2 can be surrounded by the first display area DA1. In some embodiments, the second display area DA2 can be partially surrounded by the first display area DA1. For example, the second display area DA2 can be on one side of the first display area DA1 and can be partially surrounded by the first display area DA1.

[0068] The ratio of the second display area DA2 to the display area DA can be less than the ratio of the first display area DA1 to the display area DA. For example... Figure 1 As shown, the electronic device 1 may include one second display area DA2, or may include two or more second display areas DA2.

[0069] Electronic device 1 may include mobile phones, tablet PCs, laptop computers, smartwatches or smart bracelets for wrist-worn gadgets and / or the like.

[0070] Figure 2A and Figure 2B This is a schematic cross-sectional view of a portion of an electronic device 1 including a display panel 10 according to an embodiment.

[0071] Reference Figure 2A and Figure 2B The electronic device 1 may include a display panel 10 and electronic components 20 overlapping the display panel 10.

[0072] The display panel 10 may include a substrate 100, a display layer 200 on the substrate 100, and a thin film encapsulation layer 300 on the display layer 200.

[0073] Electronic component 20 may be located in the second display area DA2. Electronic component 20 may be an electronic component that uses light and / or sound. For example, electronic component 20 may be a sensor for measuring distance, such as a proximity sensor; a sensor for identifying body parts of a user (e.g., fingerprint, iris, face, etc.); a small light outputting light; an image sensor for capturing images (e.g., a camera); and / or the like. Electronic components using light may use light with various suitable wavelengths, such as visible light, infrared light, ultraviolet light, etc. Electronic components using sound may use ultrasound and / or sound with different wavelengths. In some embodiments, electronic component 20 may include sub-components such as a light emitter and a light receiver. The light emitter and / or light receiver may be integrally formed or physically separated, and a pair of light emitters and light receivers may form one electronic component 20.

[0074] Substrate 100 may comprise glass and / or a polymer resin. Examples of the polymer resin for substrate 100 may include: polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose acetate propionate, and / or the like. Substrate 100 comprising a polymer resin may be flexible, rollable, and / or bendable. Substrate 100 may have a multilayer structure comprising a layer containing the aforementioned polymer resin and an inorganic layer.

[0075] The display layer 200 may be on the front surface of the substrate 100, and the lower protective film 175 may be on the rear surface of the substrate 100. The lower protective film 175 may be attached to the rear surface of the substrate 100. An adhesive layer may be present between the lower protective film 175 and the substrate 100. In some embodiments, the lower protective film 175 may be formed directly on the rear surface of the substrate 100, and in this case, the adhesive layer may not be present between the lower protective film 175 and the substrate 100.

[0076] The lower protective film 175 can support and protect the substrate 100. The lower protective film 175 may include an opening 175OP corresponding to the second display area DA2. The opening 175OP of the lower protective film 175 may be a recess formed by removing a portion of the lower protective film 175 in the thickness direction. In some embodiments, the opening 175OP of the lower protective film 175 may be formed by completely removing a portion of the lower protective film 175 in the thickness direction, and in this case, the opening 175OP may have a through-hole shape, such as... Figure 2A and Figure 2B As shown in the figure. In some embodiments, when a portion of the lower protective film 175 is partially removed in the thickness direction, the opening 175OP of the lower protective film 175 may have the shape of a blind hole.

[0077] The opening 175OP of the lower protective film 175 can improve the transmittance of the second display area DA2, for example, the transmittance of the transmission area TA. The lower protective film 175 may include organic insulating materials such as polyethylene terephthalate (PET) and / or polyimide (PI).

[0078] Display layer 200 may define pixels. A pixel may be an area that can emit red, green, or blue light, and each pixel may include a display element. The display element of each pixel may include an organic light-emitting diode (OLED), and depending on the type or composition of the organic materials included in the OLED, the OLED may emit light of different colors (e.g., red, green, or blue).

[0079] The display layer 200 may include: a display element layer, including an organic light-emitting diode (OLED) as a display element; a circuit layer, including a thin-film transistor (TFT) electrically connected to the OLED; and an insulating layer IL. In each of the first display area DA1 and the second display area DA2, a thin-film transistor (TFT) and an OLED electrically connected to the TFT may be respectively disposed.

[0080] The second display area DA2 may include a transmissive area TA where no thin-film transistor (TFT) or organic light-emitting diode (OLED) is disposed. The transmissive area TA may be an area through which light emitted from and / or guided to the electronic component 20 can pass (e.g., be transmittable). In the display panel 10, the transmittance of the transmissive area TA may be equal to or greater than about 30%, about 40%, about 50%, about 60%, about 75%, about 80%, about 85%, or about 90%.

[0081] A phase-shifting layer (PSL) may be located between the substrate 100 and the display layer 200, for example, between the substrate 100 and the thin-film transistor (TFT). The PSL may include a via PSL-H through which light emitted from or directed towards the electronic component 20 can pass. The via PSL-H of the phase-shifting layer is located within the transmission region TA. Light passing through the phase-shifting layer PSL may have a 180-degree phase shift and may destructively interfere with light passing through adjacent portions of the phase-shifting layer PSL. Therefore, diffraction of light around the edges of the phase-shifting layer PSL and incident on the electronic component 20 may be reduced or eliminated.

[0082] Additionally, refer to Figure 2B The light-blocking layer BML can be on the phase-shifting layer PSL, for example, between the phase-shifting layer PSL and the thin-film transistor TFT. The light-blocking layer BML may include a through-hole BML-H through which light emitted from or directed towards the electronic component 20 can pass. The through-hole BML-H of the light-blocking layer BML is located in the transmission region TA. The portion of the light-blocking layer BML without the through-hole BML-H can prevent or reduce the diffraction of light passing through the pixel circuits in the second display region DA2 or the narrow gaps between lines connected to the pixel circuits, and can improve the performance of the thin-film transistor TFT.

[0083] The display layer 200 may be sealed by an encapsulation component. In some embodiments, such as Figure 2A and Figure 2B As shown, the encapsulation component may include a thin-film encapsulation layer 300. The thin-film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In an embodiment, the thin-film encapsulation layer 300 may include a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 therebetween.

[0084] One or more electronic components 20 may be disposed in the second display area DA2. When the electronic device 1 includes multiple electronic components 20, the electronic device 1 may include a number of second display areas DA2 corresponding to the number of electronic components 20. For example, the electronic device 1 may include multiple second display areas DA2 spaced apart from each other. In some embodiments, the multiple electronic components 20 may be in one second display area DA2. For example, the electronic device 1 may include a strip-shaped (e.g., bar-like) second display area DA2, and the electronic components 20 may be spaced apart from each other along the length direction of the second display area DA2.

[0085] like Figure 2A and Figure 2BAs shown, the display panel 10 includes an organic light-emitting diode (OLED) as a display element, but the display panel 10 is not limited to this. In another embodiment, the display panel 10 may be an inorganic light-emitting display (or inorganic EL display) device comprising inorganic materials, such as a micro light-emitting diode (LED) or a quantum dot light-emitting display device. For example, the light-emitting layer of the display element included in the display panel 10 may include organic materials, inorganic materials, quantum dots, organic materials and quantum dots, or inorganic materials and quantum dots.

[0086] Figure 3 This is an equivalent circuit diagram showing the pixel circuit PC of the organic light-emitting diode OLED connected to the display panel 10 according to an embodiment.

[0087] Reference Figure 3 The display panel 10 includes a pixel circuit PC, which includes a plurality of thin-film transistors T1 to T7 and a storage capacitor Cap. The display panel 10 may include an organic light-emitting diode (OLED) as a light-emitting element that emits light according to a driving voltage transmitted through the pixel circuit PC.

[0088] The pixel circuit PC may include multiple thin-film transistors T1 to T7 and a storage capacitor Cap. According to an embodiment, such as... Figure 3 As shown, the plurality of thin-film transistors T1 to T7 may include a driving thin-film transistor T1, a switching thin-film transistor T2, a compensation thin-film transistor T3, a first initialization thin-film transistor T4, a driving control thin-film transistor T5, an emission control thin-film transistor T6, and a second initialization thin-film transistor T7.

[0089] The gate electrode of the driving thin-film transistor T1 can be connected to the electrode of the storage capacitor Cap. One of the source and drain electrodes of the driving thin-film transistor T1 can be connected to the driving voltage line PL via the driving control thin-film transistor T5, and the other of the source and drain electrodes of the driving thin-film transistor T1 can be electrically connected to the pixel electrode of the organic light-emitting diode (OLED) via the emission control thin-film transistor T6. Based on the switching operation of the switching thin-film transistor T2, the driving thin-film transistor T1 can provide a driving current Id to the OLED in response to the data signal Dm.

[0090] The gate electrode of the switching thin-film transistor T2 is connected to the first scan line SL, one of the source and drain electrodes of the switching thin-film transistor T2 is connected to the data line DL, and the other of the source and drain electrodes of the switching thin-film transistor T2 is connected to the driving thin-film transistor T1 and then connected to the driving voltage line PL via the driving control thin-film transistor T5. The switching thin-film transistor T2 is turned on in response to the scan signal Sn transmitted through the first scan line SL and performs a switching operation to transmit the data signal Dm transmitted through the data line DL to the driving thin-film transistor T1.

[0091] The gate electrode of the compensation thin-film transistor T3 is connected to the first scan line SL. One of the source and drain electrodes of the compensation thin-film transistor T3 is connected to the driving thin-film transistor T1 and, via the emission control thin-film transistor T6, to the pixel electrode of the organic light-emitting diode (OLED). The other of the source and drain electrodes of the compensation thin-film transistor T3 is connected to the electrode of the storage capacitor Cap, the first initialization thin-film transistor T4, and the driving thin-film transistor T1. The compensation thin-film transistor T3 is turned on in response to the scan signal Sn transmitted through the first scan line SL, and the driving thin-film transistor T1 is diode-connected by being electrically connected to one of the source and drain electrodes (e.g., the drain electrode) of the driving thin-film transistor T1.

[0092] The gate electrode of the first initialization thin-film transistor T4 is connected to the second scan line SL-1. One of the source and drain electrodes of the first initialization thin-film transistor T4 is connected to the first initialization voltage line VL1, and the other of the source and drain electrodes of the first initialization thin-film transistor T4 is connected to the electrode of the storage capacitor Cap, the compensation thin-film transistor T3, and the driving thin-film transistor T1. The first initialization thin-film transistor T4 is turned on in response to the previous scan signal Sn-1 transmitted through the second scan line SL-1, and performs an initialization operation to initialize the voltage of the gate electrode of the driving thin-film transistor T1 by transmitting the initialization voltage Vint to the gate electrode of the driving thin-film transistor T1.

[0093] The gate electrode of the drive control thin film transistor T5 is connected to the emitter control line EL, one of the source electrode and drain electrode of the drive control thin film transistor T5 is connected to the drive voltage line PL, and the other of the source electrode and drain electrode of the drive control thin film transistor T5 is connected to the drive thin film transistor T1 and the switch thin film transistor T2.

[0094] The gate electrode of the emission control thin film transistor T6 is connected to the emission control line EL, one of the source electrode and the drain electrode of the emission control thin film transistor T6 is connected to the driving thin film transistor T1 and the compensation thin film transistor T3, and the other of the source electrode and the drain electrode of the emission control thin film transistor T6 is electrically connected to the pixel electrode of the organic light-emitting diode OLED and the second initialization thin film transistor T7.

[0095] In response to the emission control signal En transmitted via the emission control line EL, the drive control thin film transistor T5 and the emission control thin film transistor T6 are simultaneously (e.g., synchronously) turned on, and the drive voltage ELVDD is transmitted to the organic light-emitting diode OLED, thereby allowing the drive current Id to flow in the organic light-emitting diode OLED.

[0096] The gate electrode of the second initialization thin-film transistor T7 can be connected to the third scan line SL+1 of the pixel in the subsequent row of the corresponding pixel P. Moreover, one of the source electrode and drain electrode of the second initialization thin-film transistor T7 is connected to the emission control thin-film transistor T6 and the pixel electrode of the organic light-emitting diode OLED, and the other of the source electrode and drain electrode of the second initialization thin-film transistor T7 is connected to the second initialization voltage line VL2.

[0097] Because the first scan line SL and the third scan line SL+1 are electrically connected to each other, the same scan signal Sn can be transmitted to them. Therefore, the second initialization thin-film transistor T7 can be turned on in response to the scan signal Sn transmitted through the third scan line SL+1, and can perform the operation of initializing the pixel electrodes of the organic light-emitting diode OLED.

[0098] In another embodiment, both the first initialization thin-film transistor T4 and the second initialization thin-film transistor T7 can be connected to the second scan line SL-1.

[0099] One electrode of the storage capacitor Cap is connected to the driving voltage line PL, and the opposite electrode of the organic light-emitting diode (OLED) is connected to the common voltage ELVSS. Therefore, by emitting light according to the driving current Id transmitted from the driving thin-film transistor T1, the OLED can display an image.

[0100] Reference Figure 3 The pixel circuit PC includes seven thin-film transistors T1 to T7 and a storage capacitor Cap. However, one or more embodiments are not limited to this. The number of thin-film transistors and the number of storage capacitors can vary depending on the design of the pixel circuit PC.

[0101] Figure 4 This is a schematic plan view of a portion of the first display area DA1 of the display panel 10 according to an embodiment.

[0102] Reference Figure 4 Multiple pixels P are arranged in the first display area DA1. The multiple pixels P may include a red pixel Pr, a green pixel Pg, and / or a blue pixel Pb. In some embodiments, such as Figure 4 As shown, the red pixel Pr, green pixel Pg, and blue pixel Pb can be arranged in a pen-tile matrix. In other embodiments, the red pixel Pr, green pixel Pg, and blue pixel Pb can be arranged in stripes.

[0103] The red pixel Pr, green pixel Pg, and blue pixel Pb may have different sizes (or widths). For example, the size or width of the blue pixel Pb may be larger than the size or width of the red pixel Pr and the green pixel Pg, and the size or width of the red pixel Pr may be larger than the size or width of the green pixel Pg. In some embodiments, the green pixel Pg may be rectangular in shape, and adjacent green pixels Pg may extend in different directions, but this disclosure is not limited thereto.

[0104] Figure 5 This is a schematic plan view of a portion of the second display area DA2 of the display panel 10 according to an embodiment.

[0105] Reference Figure 5 Multiple pixels P can be arranged in the second display area DA2. The multiple pixels P may include red pixels Pr, green pixels Pg, and / or blue pixels Pb. In some embodiments, the red pixels Pr, green pixels Pg, and blue pixels Pb may be arranged in a pen-tile matrix. In other embodiments, the red pixels Pr, green pixels Pg, and blue pixels Pb may be arranged in stripes. The structure of each of the red pixels Pr, green pixels Pg, and blue pixels Pb may correspond to the following references. Figure 6 The described cross-sectional structure.

[0106] The second display area DA2 may include a transmissive region TA. In the second display area DA2, the transmissive region TA may be adjacent to a pixel P. For example, the transmissive region TA may be between multiple pixels P. Multiple pixels P arranged in the second display area DA2 may include a first pixel P1 and a second pixel P2 separated from each other, with the transmissive region TA between them. For illustration, Figure 5 The diagram shows two sets of pixels P arranged in the x-direction at the bottom, namely the first pixel P1 and the second pixel P2. However, the two sets of pixels P arranged in the x-direction at the top can also be referred to as the first pixel P1 and the second pixel P2, and the two sets of pixels P arranged in the y-direction with the transmission region TA in between can also be referred to as the first pixel P1 and the second pixel P2.

[0107] The phase-shifting layer PSL may be located in the second display area DA2 and may completely overlap with the area where the pixel P is disposed. The phase-shifting layer PSL may include a via PSL-H corresponding to the transmission area TA. In some embodiments, the via PSL-H may be located in, for example, Figure 5 The plane shown generally has a cross shape, but this disclosure is not limited thereto. For example, in other embodiments, the shape of the through-hole PSL-H may be circular, elliptical, or a polygon such as a rectangle.

[0108] Figure 6 This is a schematic cross-sectional view of a portion of the display panel 10 according to an embodiment. Figure 6 The cross-sectional view corresponds to along Figure 5 The cross section taken from line VI-VI'.

[0109] Reference Figure 6 The substrate 100 may include a transparent insulating substrate comprising a material such as glass and / or quartz, and the substrate 100 may have a single-layer structure. In other embodiments, the substrate 100 may have a multilayer structure comprising a base layer and an inorganic layer comprising a polymer resin.

[0110] A buffer layer 111 may be present on the substrate 100. The buffer layer 111 may reduce or prevent the penetration of foreign matter, moisture, and / or external air from the bottom of the substrate 100, and may provide a flat surface on the substrate 100. The buffer layer 111 may include materials such as silicon oxide (SiO2), silicon oxynitride (SiON), and / or silicon nitride (SiN). x Inorganic insulating materials, and may have a single-layer structure or a multi-layer structure including one or more of the above materials.

[0111] The first pixel circuit PC1 and the second pixel circuit PC2 may be located on the buffer layer 111. Each of the first pixel circuit PC1 and the second pixel circuit PC2 may correspond to a reference. Figure 3 The pixel circuit PC is described. The first pixel circuit PC1 and the second pixel circuit PC2 may each include a thin-film transistor (TFT) and a storage capacitor (Cap), and may have the same (e.g., substantially the same) structure.

[0112] The phase-shifting layer PSL can be located in the second display area DA2 between the substrate 100 and the first pixel circuit PC1 and the second pixel circuit PC2. For example... Figure 6As shown, the phase-shifting layer PSL may be located between the substrate 100 and the buffer layer 111. However, the phase-shifting layer PSL may be located between the sub-substrate layers forming the substrate 100. For example, the substrate 100 may have a stacked structure in which a first base layer comprising a polymer, a first inorganic layer comprising an inorganic insulating material, a second base layer comprising a polymer, and a second inorganic layer comprising an inorganic insulating material are stacked sequentially, and the phase-shifting layer PSL may be located between the aforementioned layers. In other embodiments, the phase-shifting layer PSL may be located between the sub-buffer layers forming the buffer layer 111. One or at least two phase-shifting layers PSL may be located in the second display area DA2.

[0113] In light passing through a phase-shifting layer (PSL), light in a defined or specific wavelength band can have a 180-degree phase shift. For example, a PSL can reverse the phase of light in the red (peak wavelength equal to or greater than 580 nm and less than 750 nm), green (peak wavelength equal to or greater than 495 nm and less than 580 nm), or blue (peak wavelength equal to or greater than 400 nm and less than 495 nm) bands of the visible light spectrum by 180 degrees. In the following text, the terms "specific wavelength band," "first wavelength band," or "second wavelength band" may refer to one of the red, green, and blue wavelength bands.

[0114] The phase-shifting layer PSL can have a set or specific transmittance. For example, the transmittance of the phase-shifting layer PSL can be between about 3% and about 80%, between about 5% and about 80%, between about 10% and about 80%, between about 20% and about 80%, between about 30% and about 80%, between about 40% and about 80%, or between about 50% and about 80%. Moreover, the transmittance of the phase-shifting layer PSL can be between about 5% and about 50%, between about 10% and about 50%, between about 20% and about 50%, or between about 30% and about 50%.

[0115] The phase-shifting layer PSL may include at least one selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides. In embodiments, the phase-shifting layer PSL may include only a transition metal or may include a transition metal and a silicon compound. In other embodiments, the phase-shifting layer PSL may include at least one selected from the group consisting of transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides, and a transition metal. In other embodiments, the phase-shifting layer PSL may include at least one selected from the group consisting of transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides, a transition metal, and a silicon compound.

[0116] The phase-shifting layer (PSL) can have a set or specific thickness t. For example, the thickness t can be approximately... With the agreement Between, in the agreement With the agreement Between or in the agreement With the agreement Between. In some embodiments, the thickness t of the phase-shifting layer PSL may be less than or equal to or equal to or greater than

[0117] The phase-shifting layer PSL may have a set or specific refractive index. For example, the refractive index of the phase-shifting layer PSL may be between about 1.5 and about 4, between about 2 and about 4, between about 2.5 and about 4, or between about 3 and about 4. In some embodiments, the refractive index may be between about 1.5 and about 3.5, between about 1.5 and about 3, between about 1.5 and about 2.5, or between about 1.5 and about 2. In some embodiments, the refractive index may be between about 1.0 and about 1.5 or may be equal to or greater than 4.

[0118] The phase-shifted layer (PSL) may have a set or specific extinction coefficient. For example, the extinction coefficient may be between about 0.01 and about 2, between about 0.1 and about 2, between about 0.5 and about 2, or between about 1 and about 2. For example, the extinction coefficient may be between about 0.01 and about 1, between about 0.01 and about 0.5, or between about 0.01 and about 0.1.

[0119] The waveband at which the phase of transmitted light is reversed by 180 degrees by the phase-shifting layer PSL can be determined by the thickness t, refractive index, material, and composition ratio of the phase-shifting layer PSL.

[0120] The thin-film transistor (TFT) may include a semiconductor layer Act1, a gate electrode GE1 overlapping the channel region of the semiconductor layer Act1, and a source electrode SE1 and a drain electrode DE1 respectively connected to the source region and drain region of the semiconductor layer Act1. A first gate insulating layer 112 may be located between the semiconductor layer Act1 and the gate electrode GE1, and a second gate insulating layer 113 and an interlayer insulating layer 115 may be located between the gate electrode GE1 and the source electrode SE1 or between the gate electrode GE1 and the drain electrode DE1.

[0121] The storage capacitor Cap may overlap with the thin-film transistor (TFT). The storage capacitor Cap may include a first charging plate CE1 and a second charging plate CE2 that overlap each other. In some embodiments, the gate electrode GE1 of the thin-film transistor TFT may include the first charging plate CE1 of the storage capacitor Cap. A second gate insulating layer 113 may be located between the first charging plate CE1 and the second charging plate CE2.

[0122] Semiconductor layer Act1 may include polycrystalline silicon. In some embodiments, semiconductor layer Act1 may include amorphous silicon. In some embodiments, semiconductor layer Act1 may include at least one oxide selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). Semiconductor layer Act1 may include impurity-doped source and drain regions and a channel region.

[0123] The first gate insulating layer 112 may include SiO2, SiON and / or SiN. x Inorganic insulating materials, and may have a single-layer structure or a multi-layer structure including one or more of the above materials.

[0124] The gate electrode GE1 or the first charging plate CE1 may include a low-resistance conductive material such as Mo, Al, Cu and / or Ti, and may have a single-layer structure or a multi-layer structure including one or more of the above materials.

[0125] The second gate insulating layer 113 may include materials such as SiO2, SiON and / or SiN. x Inorganic insulating materials, and may have a single-layer structure or a multi-layer structure including one or more of the above materials.

[0126] The second charging board CE2 may include Al, platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), Cr, lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu), and may have a single-layer structure or a multi-layer structure including one or more of the above materials.

[0127] Interlayer insulating layer 115 may include materials such as SiO2, SiON and / or SiN. x Inorganic insulating materials, and may have a single-layer structure or a multi-layer structure including one or more of the above materials.

[0128] The source electrode SE1 or the drain electrode DE1 may each comprise Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W and / or Cu, and may have a single-layer structure or a multi-layer structure comprising one or more of the above materials. For example, the source electrode SE1 or the drain electrode DE1 may have a Ti / Al / Ti three-layer structure.

[0129] The aforementioned pixel circuit PC, including a thin-film transistor (TFT) and a storage capacitor (Cap), can be electrically connected to the pixel electrode 210. For example... Figure 6 As shown, the pixel circuit PC and the pixel electrode 210 can be electrically connected to each other via the contact metal CM.

[0130] The contact metal CM may be on the first planarization insulating layer 117 and may contact the pixel circuit PC through contact holes formed in the first planarization insulating layer 117. The contact metal CM may include Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W and / or Cu, and may have a single-layer structure or a multi-layer structure including one or more of the above materials.

[0131] The first planarization insulating layer 117 may include an organic insulating material. The first planarization insulating layer 117 may include acrylic acid, benzocyclobutene (BCB), polyimide, and / or hexamethyldisiloxane (HMDSO). The organic insulating material of the first planarization insulating layer 117 may include a photosensitive organic insulating material.

[0132] The second planarization insulation layer 118 is on the contact metal CM. The second planarization insulation layer 118 may include an organic insulating material. The second planarization insulation layer 118 may include organic insulating materials such as acrylic, BCB, polyimide and / or HMDSO. The organic insulating material of the second planarization insulation layer 118 may be a photosensitive organic insulating material.

[0133] The pixel electrode 210 may be located on the second planarization insulating layer 118. The pixel electrode 210 may contact the metal CM through contact holes in the second planarization insulating layer 118 (e.g., physical contact).

[0134] Pixel electrode 210 may include a reflective layer comprising Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and / or compounds thereof. Pixel electrode 210 may include: a reflective layer comprising the above materials; and a transparent conductive layer on and / or beneath the reflective layer. The transparent conductive layer may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In embodiments, pixel electrode 210 may have a three-layer structure in which the ITO layer, Ag layer, and ITO layer are sequentially stacked.

[0135] A pixel defining layer 119 may be present on the pixel electrode 210. The pixel defining layer 119 may cover the edge of the pixel electrode 210 and may include an opening 119OP that overlaps with the center of the pixel electrode 210.

[0136] The pixel defining layer 119 can prevent or reduce the generation of electric arcs at the edge of the pixel electrode 210 by increasing the distance between the edge of the pixel electrode 210 and the opposite electrode 230 above the pixel electrode 210. The pixel defining layer 119 may include organic insulating materials such as polyimide, polyamide, acrylic resin, BCB, HMDSO and / or phenolic resin, and may be formed by spin coating or the like.

[0137] An intermediate layer 220 corresponding to the pixel electrode 210 is formed on the pixel defining layer 119. The intermediate layer 220 may include a polymeric organic material and / or a low molecular weight material that emits light of a set or specific color.

[0138] The counter electrode 230 is located on the intermediate layer 220. The counter electrode 230 may comprise a conductive material having a relatively low work function. For example, the counter electrode 230 may comprise a transparent (semi-transparent) layer comprising Ag, Mg, Al, Ni, Cr, Li, Ca, and / or alloys thereof. In some embodiments, the counter electrode 230 may also comprise a layer such as ITO, IZO, ZnO, and / or In2O3 on the transparent (semi-transparent) layer comprising one or more of the aforementioned materials. In embodiments, the counter electrode 230 may comprise Ag and / or Mg. The counter electrode 230 may be integrally formed to completely cover the first display area and the second display area. Figure 1 (DA1 and DA2).

[0139] A stacked structure in which pixel electrode 210, intermediate layer 220, and opposing electrode 230 are sequentially stacked can form a light-emitting diode, such as an organic light-emitting diode (OLED). An OLED can emit red, green, and / or blue light, and each emission region of the OLED corresponds to a pixel P. Because the opening 119OP of the pixel defining layer 119 defines the size and / or width of the emission region, the size and / or width of pixel P can depend on the size and / or width of the opening 119OP of the pixel defining layer 119 corresponding to pixel P.

[0140] A capping layer 250 may be formed on the opposing electrode 230. The capping layer 250 may include LiF. In some embodiments, the capping layer 250 may include materials such as SiN. x Inorganic and / or organic insulating materials. In some embodiments, the cover layer 250 may not be formed.

[0141] The thin-film encapsulation layer 300 may be on the cover layer 250. The organic light-emitting diode (OLED) may be covered by the thin-film encapsulation layer 300. The thin-film encapsulation layer 300 may include a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 therebetween.

[0142] Each of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include at least one inorganic insulating material. The inorganic insulating material may include alumina (Al₂O₃), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂), zinc oxide (ZnO), silicon oxide (SiO₂), and silicon nitride (SiN₂). x ) and / or silicon oxynitride (SiON). The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 can be formed by using a chemical vapor deposition method.

[0143] The organic encapsulation layer 320 may include polymeric materials. Polymeric materials may include acrylic resins, epoxy resins, polyimides, and / or polyethylene. For example, the organic encapsulation layer 320 may include acrylic resins, such as polymethyl methacrylate, polyacrylic acid, and / or similar materials. The organic encapsulation layer 320 may be formed by curing monomers or dispersing polymers.

[0144] Each insulating layer on substrate 100 may include a hole formed in the transmission region TA. For example, the first gate insulating layer 112, the second gate insulating layer 113, the interlayer insulating layer 115, the first planarization insulating layer 117, the second planarization insulating layer 118, and the pixel defining layer 119 may each include a first to a sixth hole 112H, 113H, 116H, 117H, 118H, and 119H located in the transmission region TA and overlapping each other. Furthermore, the counter electrode 230 may include a hole 230H formed in the transmission region TA. The phase shift layer PSL is not in the transmission region TA. For example, the phase shift layer PSL may include a via PSL-H corresponding to the transmission region TA. Therefore, the transmittance of the transmission region TA can be improved.

[0145] In an embodiment, the display panel 10 may include a first pixel circuit PC1 and a second pixel circuit PC2 on a substrate 100, the first pixel circuit PC1 and the second pixel circuit PC2 being spaced apart from each other, with a transmissive region TA between them, and each including a thin-film transistor and a storage capacitor. Furthermore, the display panel 10 may include a plurality of first display elements electrically connected to a plurality of first pixel circuits PC1 and a plurality of second display elements electrically connected to a plurality of second pixel circuits PC2, and may also include a phase-shifting layer PSL between the substrate 100 and the first pixel circuits PC1 and the second pixel circuits PC2. For convenience, Figure 6 A single second pixel circuit PC2 and a single second display element are shown.

[0146] Figure 7 This is a schematic cross-sectional view of a portion of a display panel 10 according to another embodiment. The structure of the display panel 10 according to this embodiment is compared with... Figure 6The structures described are the same (e.g., substantially the same), and the differences between them will be described in detail below.

[0147] The phase-shifting layer PSL between the substrate 100 and the first pixel circuit PC1 and the second pixel circuit PC2 may include sub-phase-shifting layers. For example, the phase-shifting layer PSL may include a plurality of first sub-phase-shifting layers PSL-S1 that overlap with a plurality of first pixel circuits PC1 respectively, and a plurality of second sub-phase-shifting layers PSL-S2 that overlap with a plurality of second pixel circuits PC2 respectively. The first sub-phase-shifting layers PSL-S1 and the second sub-phase-shifting layers PSL-S2 may be spaced apart from each other and arranged in an isolated manner.

[0148] Figure 8 This is a schematic cross-sectional view of a portion of a display panel 10 according to another embodiment. The structure of the display panel 10 is shown in the reference. Figure 6 The structures described are the same (e.g., substantially the same), and the differences between them will be described primarily below.

[0149] The light-blocking layer BML may be on the phase-shifting layer PSL. The light-blocking layer BML may include a light-blocking material. For example, the light-blocking material may include metals such as Cr and / or Mo, black ink, dyes, and / or the like. The light transmittance of the light-blocking layer BML may be less than that of the phase-shifting layer PSL.

[0150] The light-blocking layer BML prevents or reduces diffraction of light emitted from or guided to the electronic component 20 through the narrow gap between the lines connected to the pixel circuit PC, and also prevents or reduces light emitted from the electronic component 20 from incident on the pixel circuit PC. Therefore, the performance of the thin-film transistor (TFT) can be improved.

[0151] In an embodiment, the edge PSL-E of the phase-shifting layer PSL may be closer to the transmission region TA than the edge BML-E of the light-blocking layer BML, and a step difference may be formed between the edges PSL-E and BML-E. For example, compared to the edge BML-E of the light-blocking layer BML, the edge PSL-E of the phase-shifting layer PSL may be further extended toward the transmission region TA by about 0.3 μm to about 5 μm.

[0152] Figure 9 yes Figure 8 A schematic enlarged cross-sectional view of a portion of the display panel 10, and with Figure 8 The region W corresponds to. Figure 10 This is a schematic plan view of a portion of the second display area DA2 of the display panel 10 according to another embodiment, and corresponds to Figure 9 Examples of implementations.

[0153] Reference Figure 9The dashed arrows indicate the paths of multiple beams L1, L2, and L3 incident on the display panel 10. Because the first beam L1, incident on the light-blocking layer BML, does not penetrate the light-blocking layer BML, it does not reach the electronic component 20 due to the light-blocking layer BML. The second beam L2, incident on the phase-shifting layer PSL in a region that does not overlap with the light-blocking layer BML, can partially penetrate the phase-shifting layer PSL because the phase-shifting layer PSL has a set or specific transmittance. However, while the phase of the second beam L2 is reversed by 180 degrees in a set or specific wavelength band, the second beam L2 can reach the electronic component 20. The third beam L3, in the region near the edge PSL-E of the phase-shifting layer PSL, which does not penetrate the phase-shifting layer PSL, can pass through the buffer layer 111 and the substrate 100 to reach the electronic component 20.

[0154] A portion of the third beam L3 can diffract around the edge of the phase-shifting layer PSL, and the diffracted light L3d can interfere destructively with the second beam L2. Distortions (e.g., image distortions) caused by the diffracted light in the light received by the electronic component 20 can be removed or reduced, and in addition, high-quality images can be provided.

[0155] In this embodiment, the light subject to destructive interference may be green light. Green cone cells have the largest proportion of cone cells in the human eye's retina, second only to red cone cells, and because rod cells absorb green light best in darkness, green light in the visible spectrum can have the highest visibility. Therefore, according to this embodiment, the effectiveness of the embodiments of this disclosure can be improved by using a phase-shifting layer (PSL) for phase reversal of green light.

[0156] In another embodiment, the light subject to destructive interference may be red light. Red light has the greatest diffraction intensity because it has the longest peak wavelength. Therefore, according to embodiments, the effectiveness of the embodiments of this disclosure can be improved by using a phase-shifting layer (PSL) for phase reversal of red light.

[0157] In another embodiment, the light subject to destructive interference may be blue light.

[0158] Reference Figure 10 The phase-shifting layer (PSL) and the light-blocking layer (BML) are on a plane. Because the edge of the phase-shifting layer (PSL-E) is closer to the transmission region (TA) than the edge of the light-blocking layer (BML-E), the area where the phase-shifting layer (PSL) is located can be larger than the area where the light-blocking layer (BML) is located.

[0159] Figure 11 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment, and Figure 12 This is a schematic plan view of a portion of the second display area DA2 of a display panel according to another embodiment.

[0160] Reference Figure 11 The first phase-shifting layer PSL1 may be on the substrate 100, the light-blocking layer BML may be on the first phase-shifting layer PSL1, and the second phase-shifting layer PSL2 may be on the light-blocking layer BML. The second phase-shifting layer PSL2 may overlap with the first phase-shifting layer PSL1 and the light-blocking layer BML.

[0161] In an embodiment, buffer layer 111 may include sub-buffer layers, such as a first sub-buffer layer 111a and a second sub-buffer layer 111b. The first sub-buffer layer 111a may be located between the first phase-shifting layer PSL1 and the light-blocking layer BML and the second phase-shifting layer PSL2, and thus may cover the first phase-shifting layer PSL1 and the light-blocking layer BML. The second sub-buffer layer 111b may be located on and cover the second phase-shifting layer PSL2.

[0162] The edge PSL1-E of the first phase-shifting layer PSL1 is closer to the transmission region TA than the edge BML-E of the light-blocking layer BML. Similarly, the edge PSL2-E of the second phase-shifting layer PSL2 is closer to the transmission region TA than the edge PSL1-E of the first phase-shifting layer PSL1.

[0163] Each of the first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 can shift the phase of light in the visible light band by 180 degrees. The first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 can shift the phase of light beams in different wavelength bands, respectively. For example, the first phase-shifting layer PSL1 can shift the phase of light in a first wavelength band by 180 degrees, and the second phase-shifting layer PSL2 can shift the phase of light in a second wavelength band by 180 degrees. Each of the light in the first and second wavelength bands can be light from the red, green, and blue light bands, but can have different peak wavelengths. The transmittance of the first phase-shifting layer PSL1 can be different from the transmittance of the second phase-shifting layer PSL2. According to an embodiment, the transmittance of the first phase-shifting layer PSL1 can be greater than, equal to, or less than the transmittance of the second phase-shifting layer PSL2.

[0164] The first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 may each have a first thickness t1 and a second thickness t2 that are different from each other. According to an embodiment, the first thickness t1 of the first phase-shifting layer PSL1 may be greater than, equal to or less than the second thickness t2 of the second phase-shifting layer PSL2.

[0165] The first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 may each have a first refractive index and a second refractive index that are different from each other. The first refractive index may be greater than, equal to, or less than the second refractive index. The first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 may each comprise at least one material selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides. The material and / or composition ratio of the second phase-shifting layer PSL2 may differ from that of the first phase-shifting layer PSL1. The thickness, refractive index, material, and composition of each of the first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 can be determined by reversing the phase of light in a set or specific wavelength band by 180 degrees.

[0166] Reference Figure 11 The dashed arrows indicate the paths of multiple light beams L1, L2, L3, and L4 incident on the display panel. Because the first light beam L1, incident on the light-blocking layer BML, cannot penetrate the light-blocking layer BML, it is prevented from reaching the electronic component 20 due to the light-blocking layer BML. The second light beam L2, located in the visible light band and incident on the first phase-shifting layer PSL1 in a region that does not overlap with the light-blocking layer BML, can pass through both the first and second phase-shifting layers PSL1 and PSL2. The second light beam L2 in the visible light band may have a phase shifted by 180 degrees by the first phase-shifting layer PSL1, and the second light beam in the second phase band may also have a phase shifted by 180 degrees by the second phase-shifting layer PSL2, thereby reaching the electronic component 20.

[0167] The beam in the second band of the third beam L3, incident on the visible light band near the edge PSL1-E of the first phase-shifting layer PSL1, may have its phase reversed by 180 degrees while passing through the second phase-shifting layer PSL2. A portion of the third beam L3 may diffract around the edge of the first phase-shifting layer PSL1. The diffracted light L3d may destructively interfere with the beam in the first band of the second beam L2, whose phase is reversed by 180 degrees, and thus, distortions (e.g., image distortions) caused by the diffracted light in the light received by the electronic component 20 may be removed or reduced.

[0168] The fourth beam L4, which is in the visible light band and incident on a portion of the region near the edge PSL2-E of the second phase-shifting layer PSL2, can diffract around the edge of the second phase-shifting layer PSL2. The diffracted light L4d can destructively interfere with the third beam L3, which is in the second band and has a phase shifted by 180 degrees, and therefore, the distortion (e.g., image distortion) caused by the diffracted light in the light received by the electronic component 20 can be removed or reduced.

[0169] Reference Figure 12The first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 are on a plane. Because the edge PSL2-E of the second phase-shifting layer PSL2 is closer to the transmission region TA than the edges PSL1-E of the first phase-shifting layer PSL1 and BML-E of the light-blocking layer BML, the area where the second phase-shifting layer PSL2 is located can be larger than the area where the first phase-shifting layer PSL1 and the light-blocking layer BML are located. Because the second phase-shifting layer PSL2 is the uppermost layer among the first phase-shifting layer PSL1, the second phase-shifting layer PSL2, and the light-blocking layer BML, the edges PSL1-E of the first phase-shifting layer PSL1 and BML-E of the light-blocking layer BML are indicated by dashed lines.

[0170] Figure 13 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment, and Figure 14 It is a schematic plan view of a portion of the second display area DA2 of a display panel according to another embodiment and corresponds to Figure 13 An embodiment of the display panel according to this embodiment. The structure and reference of the display panel according to this embodiment. Figure 11 and Figure 12 The structures described are the same (e.g., substantially the same), and the differences between them will be the main focus.

[0171] Reference Figure 13 The second phase-shifting layer PSL2 may overlap at least a portion of each of the first phase-shifting layer PSL1 and the light-blocking layer BML, and the second phase-shifting layer PSL2 may include an opening PSL2-OP that overlaps with the first phase-shifting layer PSL1 and the light-blocking layer BML. The second phase-shifting layer PSL2 may cover the edge BML-E of the light-blocking layer BML and the edge PSL1-E of the first phase-shifting layer PSL1, and the opening PSL2-OP of the second phase-shifting layer PSL2 may not overlap with the edge BML-E of the light-blocking layer BML and the edge PSL1-E of the first phase-shifting layer PSL1.

[0172] Reference Figure 14 The first phase-shifting layer PSL1, the second phase-shifting layer PSL2, and the light-blocking layer BML are on a plane. The edge PSL2-E of the second phase-shifting layer PSL2 can be closer to the transmission region TA than the edges PSL1-E of the first phase-shifting layer PSL1 and the light-blocking layer BML. The opening PSL2-OP of the second phase-shifting layer PSL2 can correspond to the area where the pixel P is arranged, and the area of ​​the opening PSL2-OP can be smaller than the area of ​​the light-blocking layer BML. Compared with the case without the opening PSL2-OP, the opening PSL2-OP of the second phase-shifting layer PSL2 helps to achieve cost-effectiveness.

[0173] Figure 15 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment.

[0174] Reference Figure 15 The first phase shift layer PSL1 can be on the substrate 100, the light blocking layer BML can be on the first phase shift layer PSL1, and the second phase shift layer PSL2 can be between the first phase shift layer PSL1 and the light blocking layer BML.

[0175] The edge PSL1-E of the first phase-shifting layer PSL1 may be closer to the transmission region TA than the edge PSL2-E of the second phase-shifting layer PSL2. Furthermore, the edge PSL2-E of the second phase-shifting layer PSL2 may be closer to the transmission region TA than the edge BML-E of the light-blocking layer BML. Step differences may form between the respective edges PSL1-E, PSL2-E, and BML-E of the first phase-shifting layer PSL1, the second phase-shifting layer PSL2, and the light-blocking layer BML.

[0176] The first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 may have different first thicknesses t1 and second thicknesses t2. The first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 may have different first refractive indices and second refractive indices. The first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 may each comprise at least one material selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides. The material and / or composition ratio of the second phase-shifting layer PSL2 may differ from that of the first phase-shifting layer PSL1. The thickness, refractive index, material, and composition of each of the first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 can be determined to shift the phase of light in a set or specific wavelength band by 180 degrees.

[0177] Reference Figure 15 The dashed arrows indicate the paths of multiple beams L1, L2, L3, and L4 incident on the display panel. Because the first beam L1, incident on the light-blocking layer BML, cannot pass through the light-blocking layer BML, it does not reach the electronic component 20 due to the light-blocking layer BML. The second beam L2, incident on the area of ​​the second phase-shifting layer PSL2 that does not overlap with the light-blocking layer BML, can penetrate both the first and second phase-shifting layers PSL1 and PSL2, and can reach the electronic component 20 while its phase is shifted by 180 degrees in the first and second wavebands.

[0178] The beam in the first band of the third beam L3, incident on the region near the edge PSL2-E of the second phase-shifting layer PSL2, has a phase shifted by 180 degrees while passing through the first phase-shifting layer PSL1, and a portion of the third beam L3 can diffract around the edge of the second phase-shifting layer PSL2. The diffracted light L3d interferes destructively with the beam in the second band of the second beam L2, whose phase is reversed by 180 degrees, and therefore, the distortion (e.g., image distortion) caused by the diffracted light in the light received by the electronic component 20 can be removed or reduced.

[0179] A portion of the fourth beam L4 incident on the region near the edge PSL1-E of the first phase-shifting layer PSL1 can diffract around the edge of the first phase-shifting layer PSL1. The diffracted light L4d can destructively interfere with the beam in the first band of the third beam L3, whose phase is reversed by 180 degrees, and therefore, the distortion (e.g., image distortion) caused by the diffracted light in the light received by the electronic component 20 can be removed or reduced.

[0180] Figure 16 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment. The structure of the display panel in this embodiment is similar to that of the reference panel. Figure 15 The structures described are the same (e.g., substantially the same), and the differences between them will be the main focus.

[0181] Reference Figure 16 The edge PSL1-E of the first phase-shifting layer PSL1 can be closer to the transmission region TA than the edge BML-E of the light-blocking layer BML. Compared to the edge PSL1-E of the first phase-shifting layer PSL1, the edge PSL2-E of the second phase-shifting layer PSL2 can extend further toward the transmission region TA. For example, the edge PSL2-E of the second phase-shifting layer PSL2 can be closer to the transmission region TA than the edge PSL1-E of the first phase-shifting layer PSL1, and the second phase-shifting layer PSL2 can completely cover the first phase-shifting layer PSL1.

[0182] Reference Figure 16 The dashed arrows indicate the paths of multiple beams L1, L2, L3, and L4 incident on the display panel. Because the first beam L1 incident on the light-blocking layer BML does not pass through the light-blocking layer BML, it does not reach the electronic component 20 due to the light-blocking layer BML. The second beam L2 incident on the overlapping region of the first phase-shifting layer PSL1 and the second phase-shifting layer PSL2 can reach the electronic component 20 while passing through the first phase-shifting layer PSL1 and the second phase-shifting layer PSL2, and simultaneously having a phase shifted by 180 degrees in both the first and second wavebands.

[0183] The beam of the third beam L3, located in the second band and incident on the region near the edge PSL1-E of the first phase-shifting layer PSL1, can have a phase shifted by 180 degrees while passing through the second phase-shifting layer PSL2, and a portion of the third beam L3 can diffract around the edge of the first phase-shifting layer PSL1. The diffracted light L3d can destructively interfere with the beam of the second beam L2, located in the first band and whose phase is reversed by 180 degrees, and therefore, the distortion (e.g., image distortion) caused by the diffracted light in the light received by the electronic component 20 can be removed or reduced.

[0184] A portion of the fourth beam L4 incident on the region near the edge PSL2-E of the second phase-shifting layer PSL2 can diffract around the edge of the second phase-shifting layer PSL2. The diffracted light L4d can destructively interfere with the beam in the second band of the third beam L3, whose phase is reversed by 180 degrees, and therefore, the distortion (e.g., image distortion) caused by the diffracted light in the light received by the electronic component 20 can be removed or reduced.

[0185] Figure 17 This is a schematic enlarged cross-sectional view of a portion of a display panel according to another embodiment, and Figure 18 It is a schematic plan view of a portion of the second display area DA2 of a display panel according to another embodiment and corresponds to Figure 17 Examples of implementations. Figure 19 A schematic graph showing the amplitude and intensity of transmitted light according to the position of the display panel, based on an embodiment, is shown.

[0186] Reference Figure 17 and Figure 18 The phase-shifting layer PSL can be on the substrate 100, and the light-blocking layer BML and the light-blocking strip layer BML' can be on the phase-shifting layer PSL. The light-blocking strip layer BML' can be on a plane between the light-blocking layer BML and the transmission region TA, and can be spaced apart from the light-blocking layer BML.

[0187] The distance d1 between the light-blocking layer BML and the light-blocking strip layer BML' can be between approximately 0.3 μm and approximately 5 μm, between approximately 0.5 μm and approximately 5 μm, between approximately 1 μm and approximately 5 μm, between approximately 2 μm and approximately 5 μm, between approximately 3 μm and approximately 5 μm, or between approximately 4 μm and approximately 5 μm. The width d2 of the light-blocking strip layer BML' can be between approximately 0.3 μm and approximately 10 μm, between approximately 0.5 μm and approximately 10 μm, between approximately 1 μm and approximately 10 μm, between approximately 3 μm and approximately 10 μm, or between approximately 5 μm and approximately 10 μm.

[0188] The light-blocking strip layer BML' may include the same (e.g., substantially the same) light-blocking material as the light-blocking layer BML. The light transmittance of the light-blocking strip layer BML' may be less than that of the phase-shifting layer PSL. The light-blocking strip layer BML' may include an edge BML'-E facing the transmission region TA. The edge BML'-E of the light-blocking strip layer BML' may be on the same plane as the edge PSL-E of the phase-shifting layer PSL.

[0189] Reference Figure 17 The dashed arrows indicate the paths of multiple beams L1, L2, L3, and L4 incident on the display panel. Because the first beam L1 and the third beam L3, incident on the light-blocking layer BML and the light-blocking strip layer BML', do not pass through the light-blocking layer BML and the light-blocking strip layer BML', they do not reach the electronic component 20 due to the light-blocking layer BML and the light-blocking strip layer BML'. The second beam L2, within a defined or specific wavelength band and incident on the region between the light-blocking layer BML and the light-blocking strip layer BML', can have a phase shifted by 180 degrees while passing through the phase-shifting layer PSL and can reach the electronic component 20. The fourth beam L4, incident on a portion of the region near the edge PSL-E of the phase-shifting layer PSL, can diffract around the edge of the phase-shifting layer PSL. The diffracted light L4d can be destructively interfered with the second beam L2 in a set or specific band and whose phase is reversed by 180 degrees, and thus, the distortion (e.g., image distortion) caused by the diffracted light in the light received by the electronic component 20 can be removed or reduced.

[0190] Reference Figure 19 The curves show the amplitude and intensity of transmitted light depending on the presence or absence of the light-blocking strip layer BML'. Figure 1 And curve 2 corresponds to Example 1, and curve Figure 3 and curve Figure 4 Corresponding to Example 2. Curve Figure 1 To curve Figure 4 The horizontal axis indicator substrate 100 is based on the width direction ( Figure 1 (x-direction) or length direction ( Figure 1 The corresponding position in the y-direction. Curve Figure 1 and curve Figure 3 The vertical axis indicates the amplitude of the transmitted light, and + and - indicate that the phase of the transmitted light is shifted by 180 degrees. (See Figure 2 and curve...) Figure 4 The vertical axis indicates the intensity of the transmitted light.

[0191] Reference curve Figure 1 To curve Figure 4Curve A (indicated by the thin dashed line) indicates the amplitude of light in a set or specific wavelength band included in a second beam (L2, indicated by the arrow in the thin dashed line) incident on a region without a phase-shifted PSL layer. Curve B (indicated by the thick dashed line) indicates the amplitude of light in a set or specific wavelength included in the first beam (L1, indicated by the arrow in the thick dashed line) and having a phase shifted by 180 degrees. Curve C indicates the sum of curves A and B. Curve D indicates the intensity of transmitted light in a set or specific wavelength band, and this intensity is proportional to the square of the amplitude.

[0192] A first beam L1, whose transmitted light passes through the phase-shifting layer PSL, has a phase shifted by 180 degrees in a set or specific wavelength band, while a second beam L2, whose transmitted light does not pass through the phase-shifting layer PSL, can be incident without phase shift. The light of the first beam L1, in the set or specific wavelength band and with a phase shifted by 180 degrees, can be diffracted after passing through the phase-shifting layer PSL and can destructively interfere with the light of the second beam L2, in the set or specific wavelength band near the edge of the phase-shifting layer PSL-E. (Refer to curve) Figure 1 Curve C in Figure 2 and curve D in Figure 2 show that the amplitude and intensity of light in a set or specific waveband can be reduced due to destructive interference in the region near the edge of the phase-shifting layer PSL-E.

[0193] Compared to Embodiment 1, which does not include a light-blocking band, Embodiment 2, which includes a light-blocking band, has the position (e.g., curve) where the amplitude of the light in the first beam L1 is greatest in a set or specific waveband and has a phase shifted by 180 degrees. Figure 3 The location where the absolute value of the amplitude of curve B is the largest can be further away from the edge of the phase-shifting layer PSL-E. Therefore, in the region close to the edge of the phase-shifting layer PSL-E, the loss of transmitted light can be reduced. By reducing the loss of transmitted light, electronic components ( Figure 2A and Figure 2B The performance degradation of 20) can also be reduced.

[0194] According to Example 2, for example, in order to obtain a greater destructive interference effect by increasing the transmittance of the phase-shifting layer PSL (e.g., equal to or greater than 30%), the loss of transmitted light can be reduced in the region near the edge PSL-E of the phase-shifting layer PSL, thereby reducing the size of electronic components ( Figure 2A and Figure 2B The performance of 20) decreased.

[0195] Figure 20 This is a schematic cross-sectional view of a portion of a display panel 10 according to another embodiment. Due to the structure of the display panel 10 and the reference... Figure 6The structures described are the same (e.g., essentially the same), so the differences between them will be the main focus.

[0196] Reference Figure 20 The antireflective layer 400 is located below the phase-shifting layer PSL and corresponds to the pixel circuit PC. The antireflective layer 400 may include chromium oxide, etc. The antireflective layer 400 may have a lower reflectivity than the phase-shifting layer PSL. The antireflective layer 400 prevents or reduces the reflection of light incident from the surface of the electronic component 20 onto the transmission region TA that has an adverse effect on the thin-film transistor TFT, pixel circuit PC, and / or the like (e.g., may damage or degrade them).

[0197] According to one or more of the above embodiments, a display device can be implemented whose display area is extended to represent an image in the area where an electronic component is located, and an electronic device including the display device can be implemented. For example, when the electronic component is a light-using electronic component (e.g., a camera), distortions (e.g., image distortion) caused by diffracted light in the light received by the electronic component can be removed or reduced. Furthermore, a display panel capable of providing high-quality images and an electronic device including the display panel can be provided. However, the scope of this disclosure is not limited to the above effects.

[0198] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims and their equivalents.

Claims

1. A display panel having a transmissive area and comprising: substrate; A plurality of first pixel circuits and a plurality of second pixel circuits are on the substrate and spaced apart from each other, and the transmission region is between the plurality of first pixel circuits and the plurality of second pixel circuits, and each of the plurality of first pixel circuits and the plurality of second pixel circuits includes a thin film transistor and a storage capacitor; Multiple first display elements are electrically connected to the multiple first pixel circuits, respectively; Multiple second display elements are electrically connected to the multiple second pixel circuits, respectively; as well as A first phase-shifting layer is disposed between the substrate and the plurality of first pixel circuits and between the substrate and the plurality of second pixel circuits, and has a first transmittance. The first phase-shifting layer does not extend through the transmission region.

2. The display panel according to claim 1, wherein, The first phase-shifting layer comprises at least one selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides.

3. The display panel according to claim 1, wherein, The first transmittance of the first phase-shifting layer is in the range of 3% to 80% in the visible light band.

4. The display panel according to claim 1, wherein, The first thickness of the first phase-shifting layer has a value in the range of 1000 Å to 3000 Å.

5. The display panel according to claim 1, wherein, The first refractive index of the first phase-shifting layer is in the range of 1.5 to 4.0, and The first extinction coefficient of the first phase-shifting layer is in the range of 0.01 to 2.

0.

6. The display panel according to claim 1, wherein, The first phase-shifting layer includes a first sub-phase-shifting layer overlapping the first pixel circuit and a second sub-phase-shifting layer overlapping the second pixel circuit, and The first subphase shift layer and the second subphase shift layer are spaced apart from each other.

7. The display panel according to claim 1, further comprising a light-blocking layer on the first phase-shifting layer, in, The light-blocking layer has a second light transmittance that is lower than the first light transmittance.

8. The display panel according to claim 7, wherein, The edge of the first phase-shifting layer is closer to the transmission region than the edge of the light-blocking layer, and The edge of the first phase-shifting layer and the edge of the light-blocking layer form a step difference.

9. The display panel according to claim 7, further comprising a second phase shift layer, the second phase shift layer being located on the light-blocking layer and overlapping the light-blocking layer and the first phase shift layer.

10. The display panel according to claim 9, wherein, The edge of the second phase-shifting layer is closer to the transmission region than the edge of the first phase-shifting layer.

11. The display panel according to claim 7, further comprising a second phase shift layer between the first phase shift layer and the light-blocking layer.

12. The display panel according to claim 11, wherein, The edge of the first phase-shifting layer is closer to the transmission region than the edge of the second phase-shifting layer.

13. The display panel according to claim 11, wherein, Compared to the edge of the first phase-shifting layer, the edge of the second phase-shifting layer extends further toward the transmission region.

14. The display panel according to claim 9, wherein, Each of the first phase shift layer and the second phase shift layer comprises at least one selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides. The material or composition ratio of the second phase shift layer is different from that of the first phase shift layer.

15. The display panel of claim 7, further comprising a light-blocking strip layer spaced apart from and between the light-blocking layer and the transmissive region.

16. The display panel of claim 1, further comprising an anti-reflective layer below the first phase-shift layer, corresponding to each of the plurality of first pixel circuits and the plurality of second pixel circuits.

17. The display panel according to claim 1, wherein, The first phase-shifting layer includes vias corresponding to the transmission region.

18. An electronic device comprising: Display panel, including the transmissive area; as well as Electronic components overlap with the transmission region. The display panel includes: substrate; A plurality of first pixel circuits and a plurality of second pixel circuits are on the substrate and spaced apart from each other, and the transmission region is between the plurality of first pixel circuits and the plurality of second pixel circuits, and each of the plurality of first pixel circuits and the plurality of second pixel circuits includes a thin film transistor and a storage capacitor; Multiple first display elements are electrically connected to the multiple first pixel circuits, respectively; Multiple second display elements are electrically connected to the multiple second pixel circuits, respectively; and A first phase-shifting layer is disposed between the substrate and the plurality of first pixel circuits and between the substrate and the plurality of second pixel circuits, and has a first transmittance. The first phase-shifting layer does not extend through the transmission region.

19. The electronic device of claim 18, further comprising a light-blocking layer on the first phase-shifting layer, in, The edge of the first phase-shifting layer is closer to the transmission region than the edge of the light-blocking layer, and The edge of the first phase-shifting layer and the edge of the light-blocking layer form a step difference.

20. The electronic device of claim 19, further comprising a second phase shift layer on the first phase shift layer.

21. The electronic device according to claim 20, wherein, Each of the first phase shift layer and the second phase shift layer comprises at least one selected from the group consisting of transition metals, silicon compounds, transition metal oxides, transition metal nitrides, transition metal oxynitrides, transition metal carbides, and transition metal oxynitrides. The material or composition ratio of the second phase shift layer is different from that of the first phase shift layer.

Images