Display device

Abstract

A display device is provided. The display device includes a substrate, a first confinement dam in a non-display region of the substrate and surrounding a display region of the substrate, a second confinement dam in the non-display region and surrounding the display region between the display region and the first confinement dam, a bank surrounding the display region outside the first confinement dam, and a voltage line configured to supply a voltage to a display element inside the display region, wherein the first confinement dam and the second confinement dam are located on the voltage line between the display region and a pad region in one side of the non-display region, and the voltage line extends to the bank beyond the first confinement dam.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit of Korean Patent Application No. 10-2020-0020548, filed with the Korean Intellectual Property Office on February 19, 2020, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] One or more embodiments relate to a display device. Background Technology

[0004] A display device is a device used to visually display data. Recently, the applications of display devices have diversified. Furthermore, as display devices have become thinner and lighter, their range of uses has gradually expanded.

[0005] The display device includes a substrate, which is divided into a display area and a non-display area outside the display area. The non-display area includes a dead zone on which no image is displayed. Non-display components such as pads, wiring, and driving circuitry are arranged in the non-display area. Recently, the demand for further reducing the dead zone of the display device has been increasing. However, as the dead zone is reduced, the width of the voltage lines arranged in the dead zone should also be reduced. Therefore, this may cause an increase in power consumption due to the increased resistance of the voltage lines, and a degradation in the display quality of the display device due to voltage drop. Summary of the Invention

[0006] One or more embodiments include a display device that can prevent voltage drop in voltage lines due to reduction of dead zone.

[0007] Additional aspects will be set forth in part in the detailed description below, and will be apparent in part from this description, or may be learned by practicing the embodiments presented in this disclosure.

[0008] According to one or more embodiments, a display device includes a substrate, and the substrate includes a display area, a non-display area, and a pad area. The non-display area is outside the display area, and the pad area is located on one side of the non-display area. A first limiting dam is located in the non-display area and surrounds the display area. A second limiting dam is located in the non-display area and surrounds the display area between the display area and the first limiting dam. A dike surrounds the display area outside the first limiting dam. A voltage line is configured to supply voltage to display elements inside the display area. The first and second limiting dams are located on the voltage line between the display area and the pad area. The voltage line extends beyond the first limiting dam to the dike.

[0009] The voltage line may include a first voltage line and a second voltage line. The first voltage line is located between the display area and the pad area. The second voltage line surrounds the opposite ends of the first voltage line and at least a portion of the display area. The outer end of the second voltage line facing the pad area may be covered by a dam between the display area and the pad area.

[0010] The difference between the width of the dam and the width of the second voltage line between the display area and the pad area can be 1.5 μm or greater. The width of the dam is measured in a direction perpendicular to the length direction of the dam, and the width of the second voltage line is covered by the dam.

[0011] The distance between the outer end of the second voltage line and the outer surface of the dike can be 1.5 μm or greater.

[0012] The outer end of the first voltage line facing the pad area can be covered by a dam between the two opposite ends of the second voltage line.

[0013] The outer ends of the first voltage line and the outer ends of the second voltage line can be on the same line.

[0014] The second voltage line can extend from the area surrounding the display area to the outside of the dike.

[0015] The display device may also include a crack-resistant portion extending along the edge of the substrate and a capping layer covering the crack-resistant portion. The crack-resistant portion is formed by removing a portion of an inorganic layer stacked on the substrate, wherein the end of a second voltage line extending to the outside of the dam may be covered by the capping layer.

[0016] The height of the second limiting dam may be less than the height of the first limiting dam. The first and second limiting dams may be located on the second voltage line between the display area and the pad area.

[0017] The display device may further include an encapsulation layer, wherein the encapsulation layer is on the display element and includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked sequentially. The first inorganic encapsulation layer may be in direct contact with voltage lines between the display area and the pad area. Attached Figure Description

[0018] The above and other aspects and features of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings.

[0019] Figure 1 This is a plan view of the display device according to the embodiment.

[0020] Figure 2 It is along Figure 1 A cross-sectional view of an example of a display device, taken by lines I-I' and II-II'.

[0021] Figure 3 yes Figure 1 Plan view of area A.

[0022] Figure 4 yes Figure 3 Plan view of area B.

[0023] Figure 5 It is along Figure 4 A cross-sectional view of an instance of the section of region B intercepted by line III-III'.

[0024] Figure 6 yes Figure 5 A cross-sectional view of the embankment.

[0025] Figure 7 yes Figure 1 Plan view of area A.

[0026] Figure 8 yes Figure 7 Plan view of area C. Detailed Implementation

[0027] Referring now to the embodiments in detail, examples of which are shown in the accompanying drawings, wherein similar reference numerals always indicate similar elements. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments are described below only by reference to the accompanying drawings to explain various aspects of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the description, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, and all of a, b, and c.

[0028] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, similar reference numerals are used for similar or corresponding elements, and repeated descriptions of similar or corresponding elements are omitted.

[0029] It will be understood that while terms such as “first,” “second,” etc., may be used in this document to describe various components, these components should not be limited by these terms. These terms are used only to distinguish one component from another.

[0030] Unless otherwise explicitly indicated by the context, the singular form “one” as used herein is intended to include the plural form as well.

[0031] It will be further understood that the term “comprising” as used herein means the presence of the stated feature or component, but does not exclude the presence or addition of one or more other features or components.

[0032] It will be understood that when a layer, area, or component is referred to as being "formed" on another layer, area, or component, it can be formed directly or indirectly on that other layer, area, or component. That is, for example, there can be intermediate layers, areas, or components.

[0033] For ease of interpretation, the sizes of the elements in the accompanying drawings may be exaggerated or reduced. In other words, the sizes and thicknesses of the parts in the drawings are arbitrarily shown for the sake of explanation.

[0034] When a particular implementation can be carried out differently, the specific process sequence can be performed differently than the described sequence. For example, two consecutively described processes can be performed substantially simultaneously or in the reverse order of their description.

[0035] It will be understood that when a layer, area, or component is referred to as being "connected" to another layer, area, or component, it may be "directly connected" to the other layer, area, or component and / or may be "indirectly connected" to the other layer, area, or component if other layers, areas, or components are located between that layer, area, or component and the other layer, area, or component. For example, it will be understood that when a layer, area, or component is referred to as being "electrically connected" to another layer, area, or component, it may be "directly electrically connected" to the other layer, area, or component and / or may be "indirectly electrically connected" to the other layer, area, or component if other layers, areas, or components are located between that layer, area, or component and the other layer, area, or component.

[0036] Figure 1 This is a plan view of the display device 10 according to the embodiment, and Figure 2 It is along Figure 1 A cross-sectional view of an example of a cross-section of the display device 10 taken by lines I-I' and II-II'.

[0037] Reference Figure 1 and Figure 2 According to an embodiment, the display device 10 includes a display area DA and a non-display area PA. The display area DA displays an image, and the non-display area PA is located outside the display area DA. The pad area PADA may be located inside the non-display area PA. The substrate 100 may include the display area DA, the non-display area PA, and the pad area PADA.

[0038] The display element is located in the display area DA. In addition to the display element, a thin-film transistor 210 may be located in the display area DA, and the thin-film transistor 210 is electrically connected to the display element. Figure 2 The diagram shows an organic light-emitting diode (OLED) 300 located in the display area DA, which serves as a display element. The electrical connection between the OLED 300 and the thin-film transistor 210 means that the pixel electrode 310 of the OLED 300 is electrically connected to the thin-film transistor 210.

[0039] The non-display area PA includes a pad area PADA on one side of the non-display area PA, which is an area where various electronic components or printed circuit boards are electrically attached. A first voltage line 410 and a second voltage line 420, each applying voltage to a display element, may be located in the non-display area PA. For example, the first voltage line 410 may include a drive voltage line, and the second voltage line 420 may include a common voltage line.

[0040] The first voltage line 410 may be arranged between the display area DA and the pad area PADA (see, for example, see...). Figure 1 A second voltage line 420 may surround the remaining sides of the display area DA and be connected to a second connector 422 extending to the pad area PADA.

[0041] Figure 1 This is a plan view of the substrate 100 during the manufacturing process of the display device 10. In the final display device 10 or an electronic device such as a smartphone including the display device 10, a portion of the substrate 100 may be bent to minimize the area of ​​the non-display area PA that is observed by the user. In this case, the substrate 100 is bent such that the pad area PADA is located behind the display area DA. Accordingly, what the user observes is that the display area DA occupies most of the display device 10.

[0042] Substrate 100 may comprise a variety of flexible or bendable materials. For example, substrate 100 may comprise polymeric resins such as polyethersulfone (PES), polyacrylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate (PAR), polyimide (PI), polycarbonate (PC), or cellulose acetate propionate (CAP). Substrate 100 may have a multilayer structure comprising two layers containing the aforementioned polymeric resins and a barrier layer between the two layers. The barrier layer may comprise an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride.

[0043] In the following text, refer to Figure 2 The structure of the display device 10 will be described in detail.

[0044] For example, substrate 100 may have a multilayer structure in which a first base layer 101, a first barrier layer 102, a second base layer 103, and a second barrier layer 104 are stacked in sequence.

[0045] The first base layer 101 and the second base layer 103 may each comprise, for example, transparent glass, which comprises silicon dioxide (SiO2) as a main component. However, the first base layer 101 and the second base layer 103 may each comprise a transparent plastic material. The transparent plastic material may include polyethersulfone (PES), polyacrylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC), and cellulose acetate propionate (CAP).

[0046] The first base layer 101 and the second base layer 103 may have the same thickness or different thicknesses. For example, the first base layer 101 and the second base layer 103 may each comprise polyimide and have a thickness in the range of about 3 μm to about 20 μm.

[0047] The first barrier layer 102 and the second barrier layer 104 are configured to prevent external foreign matter from penetrating through the substrate 100 into the display device 10, and include materials such as silicon nitride (SiN). x ) and / or silicon dioxide (SiO2) x The first barrier layer 102 may comprise a single layer or multiple layers of inorganic materials. For example, the first barrier layer 102 may comprise multiple layers including an amorphous silicon layer and a silicon oxide layer for improving adhesion between adjacent layers. The second barrier layer 104 may comprise a silicon oxide layer. Additionally, the first barrier layer 102 and the second barrier layer 104 may each have approximately [missing information - likely a specific layer size or density]. to approximately The thickness is within the range.

[0048] A buffer layer may also be formed on the substrate 100. The buffer layer provides a flat surface to the top surface of the substrate 100 and prevents foreign matter or moisture from penetrating through the substrate 100. For example, the buffer layer may comprise inorganic or organic materials. Inorganic materials include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, and titanium nitride, while organic materials include polyimide, polyester, and acrylic acid. The buffer layer may comprise a stack of the above materials. In an embodiment, the second barrier layer 104 of the substrate 100 may comprise a portion of a buffer layer having a multilayer structure.

[0049] Thin-film transistors 210 are arranged in the display area DA of the substrate 100. Thin-film transistors may also be arranged in the non-display area PA of the substrate 100. The thin-film transistors located in the non-display area PA may include, for example, part of a circuit configured to control electrical signals applied to the display area DA.

[0050] The thin-film transistor 210 includes a semiconductor layer 211, a gate electrode 213, a source electrode 215, and a drain electrode 217. The semiconductor layer 211 includes amorphous silicon, polycrystalline silicon, or an organic semiconductor material. When the buffer layer is located on the substrate 100, the semiconductor layer 211 may be located on the buffer layer.

[0051] Gate electrode 213 is arranged above semiconductor layer 211. Source electrode 215 is electrically connected to drain electrode 217 according to a signal applied to gate electrode 213. Gate electrode 213 may include at least one of, for example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). In this case, to ensure insulation between semiconductor layer 211 and gate electrode 213, a first inorganic insulating layer 120 comprising inorganic materials may be arranged between semiconductor layer 211 and gate electrode 213, wherein the inorganic materials include silicon oxide, silicon nitride, and silicon oxynitride.

[0052] The second inorganic insulating layer 130 may be arranged on the gate electrode 213 and may have a single-layer structure or a multi-layer structure including inorganic materials, such as silicon oxide, silicon nitride and silicon oxynitride.

[0053] Source electrode 215 and drain electrode 217 are arranged on the second inorganic insulating layer 130. Source electrode 215 and drain electrode 217 are electrically connected to semiconductor layer 211 through contact holes formed in the second inorganic insulating layer 130 and the first inorganic insulating layer 120. Considering conductivity, source electrode 215 and drain electrode 217 may comprise at least one of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), and may have a single-layer or multi-layer structure. For example, source electrode 215 and drain electrode 217 may each comprise a Ti / Al / Ti three-layer structure.

[0054] A planarization layer 140 may be arranged on the thin-film transistor 210. For example, as Figure 2As shown, when the organic light-emitting diodes 300 are positioned higher than the thin-film transistors 210, the planarization layer 140 can planarize the corners caused by the thin-film transistors 210 by covering them. The planarization layer 140 may include, for example, organic insulating materials such as benzocyclobutene (BCB) or hexamethyldisiloxane (HMDSO). Although in Figure 2 The diagram shows that the planarization layer 140 is a single layer, but the planarization layer 140 may include multiple layers. Various modifications can be made. The display device 10 according to this embodiment may include both the protective layer 170 and the planarization layer 140, or may include only the planarization layer 140.

[0055] Organic light-emitting diodes (OLEDs) 300 are arranged within the display area DA of the substrate 100 on a portion of the planarization layer 140. The OLEDs 300 include a pixel electrode 310, a counter electrode 330, and an intermediate layer 320 between the pixel electrode 310 and the counter electrode 330. The intermediate layer 320 includes an emission layer.

[0056] The planarization layer 140 includes an opening that exposes at least one of the source electrode 215 and the drain electrode 217 of the thin-film transistor 210. Pixel electrodes 310 are arranged on the planarization layer 140 and are electrically connected to the thin-film transistor 210 by contacting one of the source electrode 215 and the drain electrode 217 through the opening.

[0057] Pixel electrode 310 may include a (semi-)transparent electrode or a reflective electrode. When pixel electrode 310 includes a (semi-)transparent electrode, it may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). When pixel electrode 310 includes a reflective layer and a single layer, the reflective layer includes at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and their compounds, and the single layer includes ITO, IZO, ZnO, In₂O₃, IGO, or AZO. Pixel electrode 310 may include various materials, and its structure may include a single layer or multiple layers.

[0058] A pixel defining layer 150 may be disposed on a planarization layer 140. The pixel defining layer 150 defines pixels by including openings corresponding to sub-pixels (i.e., openings that at least expose the central portion of the pixel electrode 310). Additionally, in Figure 2In the case shown, the pixel defining layer 150 can prevent arcing at the edge of the pixel electrode 310 by increasing the distance between the edge of the pixel electrode 310 and the edge of the opposite electrode 330 above the pixel electrode 310. The pixel defining layer 150 may include, for example, an organic insulating material, such as polyimide or HMDSO.

[0059] The intermediate layer 320 of the organic light-emitting diode 300 includes an emission layer. The emission layer may comprise a polymeric organic material or a low-molecular-weight organic material that emits light of a predetermined color. Additionally, the intermediate layer 320 may include at least one functional layer selected from a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL), and an electron injection layer (EIL). The functional layer may comprise an organic material. Some of the multiple layers constituting the intermediate layer 320 (e.g., the functional layers) may be integrally formed over multiple pixel electrodes 310.

[0060] The counter electrode 330 may cover the display area DA. The counter electrode 330 may be formed integrally within a plurality of organic light-emitting diodes 300 to correspond to a plurality of pixel electrodes 310. The counter electrode 330 may include a (semi-)transparent electrode or a reflective electrode. When the counter electrode 330 includes a (semi-)transparent electrode, it may include a layer comprising a metal having a low work function (i.e., Li, Ca, lithium fluoride (LiF) / Ca, LiF / Al, Al, Ag, Mg, and compounds thereof), and the (semi-)transparent conductive layer may include ITO, IZO, ZnO, or In2O3. When the counter electrode 330 includes a reflective electrode, it may include a layer comprising Li, Ca, lithium fluoride (LiF) / Ca, LiF / Al, Al, Ag, Mg, and compounds thereof.

[0061] In order for the display device 10 to display an image, a predetermined electrical signal is applied to the opposite electrode 330. For this purpose, a second voltage line 420, which serves as a common voltage line, can be electrically connected to the opposite electrode 330, and the predetermined electrical signal can be transmitted to the opposite electrode 330.

[0062] The relative electrode 330 can be in direct contact with the second voltage line 420, or as... Figure 2As shown, a protective conductive layer 421 is electrically connected to the second voltage line 420. The protective conductive layer 421 may be located on the planarization layer 140, may extend over the second voltage line 420, and is therefore electrically connected to the second voltage line 420. Thus, the opposing electrode 330 may contact the protective conductive layer 421 in the non-display area PA. The protective conductive layer 421 may contact the second voltage line 420 in the non-display area PA.

[0063] like Figure 2 As shown, since the protective conductive layer 421 is located on the planarization layer 140, the protective conductive layer 421 can include the same material as the elements located on the planarization layer 140 within the display area DA, and can be formed synchronously. Specifically, while the pixel electrode 310 is formed on the planarization layer 140 within the display area DA, the protective conductive layer 421 can be simultaneously formed on the planarization layer 140 in the non-display area PA using the same material as the pixel electrode 310. Therefore, the protective conductive layer 421 has the same structure as the pixel electrode 310. Figure 2 As shown, the protective conductive layer 421 can cover the portion of the second voltage line 420 that is exposed due to not being covered by the planarization layer 140. Thus, during the process of forming the first limiting dam 610 or the second limiting dam 620, damage to the second voltage line 420 exposed outside the planarization layer 140 can be prevented.

[0064] like Figure 2 As shown, to prevent external oxygen or moisture from penetrating into the display area DA through the planarization layer 140, the planarization layer 140 may have an opening 140b in the non-display area PA. The opening 140b may surround the display area DA. Furthermore, while forming the protective conductive layer 421, the protective conductive layer 421 may fill the opening 140b. Thus, impurities in a portion of the planarization layer 140 that have penetrated into the non-display area PA can be effectively prevented from penetrating into the portion of the planarization layer 140 inside the display area DA.

[0065] A capping layer 160 may be located on the opposing electrode 330. The capping layer 160 improves the efficiency of light emitted from the organic light-emitting diode 300. The capping layer 160 may cover the opposing electrode 330, extend beyond the opposing electrode 330, and may contact the protective conductive layer 421 located beneath the opposing electrode 330. Since the opposing electrode 330 covers and extends beyond the display area DA, the capping layer 160 also covers the display area DA and extends beyond the non-display area PA beyond the display area DA. The capping layer 160 comprises an organic material.

[0066] As described above, the capping layer 160 improves the efficiency of light emitted from the organic light-emitting diode 300. For example, the capping layer 160 can improve the light extraction efficiency to the outside. Preferably, the efficiency improvement of the capping layer 160 is uniformly performed above the display area DA. Preferably, the capping layer 160 has a top surface corresponding to the corner of the top surface of the layer below the capping layer 160. That is, as Figure 2 As shown, the portion of the cover layer 160 located on the opposite electrode 330 may have a top surface with a shape corresponding to the corner of the top surface of the opposite electrode 330.

[0067] The encapsulation layer 500 is located above the cover layer 160. The encapsulation layer 500 protects the organic light-emitting diode 300 from external oxygen or moisture. For this purpose, the encapsulation layer 500 has a shape that extends beyond the display area DA to the non-display area PA and the display area DA where the organic light-emitting diode 300 is located. The encapsulation layer 500 may have a multilayer structure. Specifically, as... Figure 2 As shown, the encapsulation layer 500 may include a first inorganic encapsulation layer 510, an organic encapsulation layer 520, and a second inorganic encapsulation layer 530.

[0068] The first inorganic encapsulation layer 510 may cover the cover layer 160 and includes silicon oxide, silicon nitride and / or silicon oxynitride.

[0069] like Figure 2 As shown, since the first inorganic encapsulation layer 510 is formed along the structure below the first inorganic encapsulation layer 510, the top surface of the first inorganic encapsulation layer 510 may not be flat. Since the organic encapsulation layer 520 covers the first inorganic encapsulation layer 510 and has sufficient thickness, the top surface of the organic encapsulation layer 520 may be substantially flat above the display area DA. The organic encapsulation layer 520 may include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid), or any combination thereof.

[0070] The second inorganic encapsulation layer 530 may cover the organic encapsulation layer 520 and includes silicon oxide, silicon nitride, and / or silicon oxynitride. The second inorganic encapsulation layer 530 may extend outside the organic encapsulation layer 520 and contact the first inorganic encapsulation layer 510, thereby allowing the organic encapsulation layer 520 to remain unexposed to the outside.

[0071] Since the encapsulation layer 500 includes a first inorganic encapsulation layer 510, an organic encapsulation layer 520, and a second inorganic encapsulation layer 530, even if a crack occurs inside the encapsulation layer 500, the crack will not be connected through this multi-layer structure between the first inorganic encapsulation layer 510 and the organic encapsulation layer 520 or between the organic encapsulation layer 520 and the second inorganic encapsulation layer 530. This construction prevents or minimizes the path for external oxygen or moisture to penetrate into the display area DA.

[0072] During the formation of the encapsulation layer 500, the structure beneath the encapsulation layer 500 may be damaged. For example, the first inorganic encapsulation layer 510 may be formed using chemical vapor deposition. While the first inorganic encapsulation layer 510 is formed using chemical vapor deposition, the layer directly beneath it may be damaged. Therefore, when the first inorganic encapsulation layer 510 is formed directly on the capping layer 160, the capping layer 160, which improves the efficiency of light emitted from the organic light-emitting diode 300, may be damaged, and thus, the light efficiency of the display device 10 may deteriorate. Therefore, to prevent damage to the capping layer 160 during the formation of the encapsulation layer 500, a protective layer 170 may be arranged between the capping layer 160 and the encapsulation layer 500. The protective layer 170 may include LiF.

[0073] As described above, the cover layer 160 extends to the non-display area PA and the display area DA. Therefore, the protective layer 170 extends outside the cover layer 160 so that the cover layer 160 does not directly contact the encapsulation layer 500. In this case, the protective layer 170 covers the end 160a of the cover layer 160, and correspondingly, the end 170a of the protective layer 170 is located above the planarization layer 140. Specifically, as... Figure 2 As shown, the end 170a of the protective layer 170 is in direct contact with the protective conductive layer 421 on the planarization layer 140.

[0074] Therefore, since the first inorganic encapsulation layer 510, which is the bottommost layer of the encapsulation layer 500, does not contact the cover layer 160, which includes organic materials, but instead contacts the protective layer 170, which includes inorganic materials, the adhesive force between the encapsulation layer 500 and the layers below it can be maintained at a high level. Thus, during the manufacturing process of the display device 10 or during use after manufacturing, the encapsulation layer 500 can be effectively prevented from peeling off from the layers below it.

[0075] When forming the encapsulation layer 500, specifically when forming the organic encapsulation layer 520, it is necessary to restrict the material used to form the organic encapsulation layer 520 so that the material used to form the organic encapsulation layer 520 is located within a pre-defined region. For this purpose, such as... Figure 2 As shown, the first limiting dam 610 may be located in the non-displayed area PA. Specifically, as... Figure 2 As shown, the first inorganic insulating layer 120, the second inorganic insulating layer 130, and the planarization layer 140 may be located in the non-display area PA and the display area DA. The first limiting dam 610 is positioned in the non-display area PA to be separate from the planarization layer 140.

[0076] The first limiting dam 610 may have a multi-layer structure. That is, the first limiting dam 610 may sequentially include a bottom layer 611 and a top layer 613 in a direction away from the substrate 100. The bottom layer 611 may be formed simultaneously with forming a portion of the planarization layer 140 in the display area DA, and may include the same material as the planarization layer 140. The top layer 613 may be formed simultaneously with forming a portion of the pixel defining layer 150 in the display area DA, and may include the same material as the pixel defining layer 150.

[0077] like Figure 2 As shown, in addition to the first limiting dam 610, the second limiting dam 620 may be located between the first limiting dam 610 and the end 140a of the planarization layer 140. The second limiting dam 620 may be located on a portion of the protective conductive layer 421 on the second voltage line 420. The second limiting dam 620 is located in the non-display area PA and is separated from the planarization layer 140. Like the first limiting dam 610, the second limiting dam 620 may have a multilayer structure and may include fewer layers than the first limiting dam 610, such that the height of the second limiting dam 620 from the substrate 100 is less than the height of the first limiting dam 610 from the substrate 100. Figure 2 The diagram shows that the second limiting dam 620 is formed synchronously with the top layer 613 of the first limiting dam 610, and includes the same material as the top layer 613.

[0078] Therefore, since the position of the organic encapsulation layer 520 is restricted by the second limiting dam 620, material used to form the organic encapsulation layer 520 can be prevented from overflowing outside the second limiting dam 620 during the formation of the organic encapsulation layer 520. Even if some material used to form the organic encapsulation layer 520 overflows outside the second limiting dam 620, the position of the organic encapsulation layer 520 is still restricted by the first limiting dam 610. Accordingly, material used to form the organic encapsulation layer 520 can no longer move in the direction toward the edge 100a of the substrate 100. Conversely, as Figure 2 As shown, a first inorganic encapsulation layer 510 and a second inorganic encapsulation layer 530, formed by chemical vapor deposition, cover the second confinement dam 620 and the first confinement dam 610, and are formed to the outside of the first confinement dam 610.

[0079] The dam 630 may also be located outside the first limiting dam 610. The dam 630 may surround the first limiting dam 610. During the manufacturing process of the display device 10, the dam 630 supports the mask used when forming the intermediate layer 320 or the opposing electrode 330 of the organic light-emitting diode 300. During this process, the dam 630 prevents previously formed elements from contacting and being damaged by the mask. For example, the dam 630 may have a structure with a first layer 631, a second layer 633, and a third layer 635 stacked. The first layer 631 may be formed simultaneously with the planarization layer 140 and may include the same material as the planarization layer 140. The second layer 633 may be formed simultaneously with the pixel defining layer 150 and may include the same material as the pixel defining layer 150. The third layer 635 may be additionally formed on the second layer 633 and may include the same material as the second layer 633. For example, the third layer 635 may be formed simultaneously with the second layer 633 by using a halftone mask while forming the pixel defining layer 150. The first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 can be formed on the outside of the dam 630.

[0080] like Figure 2 As shown, the anti-crack portion 640 is located in the non-display area PA. The anti-crack portion 640 may extend along at least a portion of the edge 100a of the substrate 100. For example, the anti-crack portion 640 may have a shape that surrounds the display area DA once. The anti-crack portion 640 may have a discontinuous shape in some cross-sections. The anti-crack portion 640 prevents cracks from transferring to the display area DA, which may occur during the manufacturing process of the display device 10 while cutting the mother substrate, in the respective first inorganic insulating layer 120 and second inorganic insulating layer 130 comprising inorganic materials, or which may occur during the use of the display device 10 due to impact in the respective first inorganic insulating layer 120 and second inorganic insulating layer 130 comprising inorganic materials.

[0081] The crack-resistant part 640 can have various shapes. For example... Figure 2 As shown, the anti-crack portion 640 can be formed synchronously with some elements formed in the display area DA, and can include the same material as some of the elements, and has a multi-layer structure. Figure 2 As shown, the crack-resistant portion 640 has a multi-layer structure including a bottom layer 640' and a top layer 640"", with the top layer 640" located on top of the bottom layer 640'. Specifically, in Figure 2 The diagram shows that the crack-resistant portion 640 includes a bottom layer 640' and a top layer 640'. The bottom layer 640' comprises the same material as the first inorganic insulating layer 120, and the top layer 640' comprises the same material as the second inorganic insulating layer 130 on the first inorganic insulating layer 120. When a buffer layer is formed on the substrate 100, the crack-resistant portion 640 may include a layer comprising the same material as the buffer layer. Additionally, as... Figure 2 As shown, the anti-crack section 640 may include multiple layers that are separate from each other, rather than a single layer.

[0082] The crack-resistant portion 640 can be formed by removing a portion of the first inorganic insulating layer 120 and a portion of the second inorganic insulating layer 130. That is, as... Figure 2 As shown, a groove is formed on at least one side of the crack-resistant portion 640, where the first inorganic insulating layer 120 and the second inorganic insulating layer 130 have been removed. The crack-resistant portion 640 may include residues of the first inorganic insulating layer 120 and the second inorganic insulating layer 130 adjacent to the groove.

[0083] like Figure 2 As shown, the anti-crack portion 640 may be covered by a capping layer 650. The capping layer 650 may be formed simultaneously with, for example, the planarization layer 140 formed in the display area DA, and may include the same material as the planarization layer 140. That is, the capping layer 650 may include a layer containing organic material, which covers the anti-crack portion 640 containing inorganic material. The capping layer 650 may cover the ends of the first inorganic insulating layer 120 and / or the ends of the second inorganic insulating layer 130 in a direction toward the edge 100a of the substrate 100, and also cover the anti-crack portion 640.

[0084] like Figure 2 As shown, the second voltage line 420 may extend in a direction toward the edge 100a of the substrate 100, and the end 420a of the second voltage line 420 may be located outside the embankment 630 and covered by the capping layer 650. Therefore, since the width of the second voltage line 420 on at least two opposite sides of the display area DA can be increased, the width of the second voltage line 420 may not decrease even if the non-display area PA is reduced. Accordingly, the display quality of the display device 10 can be prevented from deteriorating due to the increase in the resistance of the second voltage line 420.

[0085] Figure 3 yes Figure 1 Plan view of area A. Figure 4 yes Figure 3 Plan view of area B. Figure 5 It is along Figure 4 A cross-sectional view of an instance of the section of region B intercepted by line III-III'. Figure 6 yes Figure 5 A cross-sectional view of the embankment 630.

[0086] Reference Figures 3 to 5 The first voltage line 410 and the second voltage line 420 may be located in the non-display area PA. The first voltage line 410 and the second voltage line 420 supply power to the organic light-emitting diode 300 (e.g., see...). Figure 2The supply voltage is provided. For example, the first voltage line 410 may include a drive voltage line. The second voltage line 420 may include a common voltage line. As described above, the second voltage line 420 may be directly connected to the opposite electrode 330 (e.g., see [reference]). Figure 2 Alternatively, it can be connected to the opposite electrode 330 via another wire. The first voltage line 410 and the second voltage line 420 may form the source electrode 215 (e.g., see...). Figure 2 ) and drain electrode 217 (for example, see Figure 2 It is formed simultaneously with the source electrode 215 and the drain electrode 217, and may include the same material as the source electrode 215 and the drain electrode 217.

[0087] The first voltage line 410 may be arranged on one side of the display area DA and the pad area PADA (e.g., see...). Figure 1 The first voltage line 410 may be arranged to correspond to one side of the display area DA and connected to the first connector 412. For example, in the case where the display area DA has a rectangular shape, the first voltage line 410 may be arranged to correspond to one of the plurality of sides of the display area DA. The first voltage line 410 may be parallel to one of the plurality of sides and may have a length equal to or greater than that of one of the plurality of sides. One of the plurality of sides corresponding to the first voltage line 410 may be connected to the pad area PADA (e.g., see [link to relevant documentation]). Figure 1 (Adjacent)

[0088] The second voltage line 420 may surround at least a portion of the display area DA. For example, the second voltage line 420 may surround the opposite ends of the first voltage line 410 and the display area DA, and be connected to the second connector 422. The second connector 422 may be connected to the pad portion.

[0089] like Figure 4 and Figure 5 As shown, since the first limiting dam 610, the second limiting dam 620, and the dike 630 surround the display area DA, they are also located between the display area DA and the pad area PADA (see, for example, see...). Figure 1 Between ), through this configuration, when the encapsulation layer 500 is formed, specifically when the organic encapsulation layer 520 is formed, the material used to form the organic encapsulation layer 520 can be located within a pre-defined area, and the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 extend to the embankment 630.

[0090] The outer end 420b of the second voltage line 420 and the pad area PADA in the display area DA (see, for example) Figure 1The dam 630 overlaps between the two voltage lines. That is, the outer end 420b of the second voltage line 420 is covered by the dam 630. With this configuration, the area of ​​the second voltage line 420 can be increased compared to the case in the related art where the outer end 420b is covered by the first limiting dam 610. Therefore, even if the display area DA and the pad area PADA are reduced (for example, see...), the area of ​​the second voltage line 420 can be increased. Figure 1 The spacing between them is used to reduce the dead zone. Since the width of the second voltage line 420 in the relevant area is not affected or may even increase, the resistance of the second voltage line 420 can be prevented from increasing.

[0091] In the display area DA and the pad area PADA (for example, see...) Figure 1 Between the first limiting dam 610 and the embankment 630, the gap is an area where only the inorganic layers (i.e., the first inorganic insulating layer 120, the second inorganic insulating layer 130, the first inorganic encapsulation layer 510, and the second inorganic encapsulation layer 530) are located. In this area, since the first inorganic encapsulation layer 510 is in direct contact with the second inorganic encapsulation layer 530 and another layer below (e.g., the second inorganic insulating layer 130), the adhesion of the encapsulation layer 500 is improved. Therefore, in the display area DA and the pad area PADA (e.g., see...), the adhesion of the encapsulation layer 500 is improved. Figure 1 Between the first limiting dam 610 and the dike 630, the area can be defined as the bonding area AA.

[0092] The second connector 422, connected to the second voltage line 420, is exposed in the adhesive area AA. The first inorganic encapsulation layer 510 covers the top and side surfaces of the second connector 422, and multiple second connectors 422 may be formed. In this case, a step difference is formed by the second connector 422 in a direction perpendicular to the length direction of the second connector 422. Accordingly, damage to the first inorganic encapsulation layer 510 covering the second connector 422 may occur due to the corners of the second connector 422. Conversely, when the second voltage line 420 extends to the embankment 630, as... Figure 5 As shown, damage to the first inorganic encapsulation layer 510 can be prevented because the step difference caused by the second connector 422 in the adhesive area AA can be minimized.

[0093] like Figure 6As shown, the outer end 420b of the second voltage line 420 facing the pad region PADA is covered by a dam 630. In this case, the difference between the width b of the bottom end of the dam 630 and the width a of the second voltage line 420 covered by the dam 630 can be 1.5 μm or greater. This means that the distance between the outer end 420b and the outer surface of the dam 630 is 1.5 μm or greater. With this configuration, damage to the second voltage line 420 exposed to the outside of the planarization layer 140 can be prevented during the process of forming the first limiting dam 610 or the second limiting dam 620. In order to prevent the dam 630 from being damaged during the manufacturing of the display device 10 (for example, see...), Figure 1 During the process of being pulled out, the bottom width b of the dike 630 in the direction perpendicular to the length direction of the dike 630 can be 40 μm or greater.

[0094] More specifically, when the second voltage line 420 has a Ti / Al / Ti three-layer structure, when the outer end 420b is exposed to the developer used to etch the planarization layer 140 during the patterning process of the planarization layer 140, the Al layer, which has a relatively high etching rate compared to the Ti layer, may be over-etched. Accordingly, the Al layer further recesses into the inner side of the outer end 420b, and thus a bitten edge structure can be formed. In this state, when the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 are formed, damage such as cracks to the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may occur due to the reduced step coverage of the side surface of the outer end 420b. Conversely, according to the embodiment, a dam 630 covers the outer end 420b of the second voltage line 420. In this case, the difference between the bottom width b of the dam 630 and the width a of the second voltage line 420 covered by the dam 630 is maintained at 1.5 μm or greater. Therefore, the outer end 420b is prevented from being exposed to the developer used to etch the planarization layer 140.

[0095] Furthermore, the width 'a' of the second voltage line 420 covered by the dike 630 can be 1.5 μm or greater. As described above, the dike 630 should cover the outer end 420b of the second voltage line 420. However, if the width 'a' of the second voltage line 420 covered by the dike 630 is less than 1.5 μm, the outer end 420b may not be covered by the dike 630 if an error occurs during the formation of the dike 630. Therefore, considering process allowance, the width 'a' of the second voltage line 420 covered by the dike 630 can be formed to have 1.5 μm or greater.

[0096] At the location overlapping with the dam 630, inorganic insulating layers such as the first inorganic insulating layer 120 and the second inorganic insulating layer 130 on the substrate 100 are removed, and an organic material layer 660 may be filled in the area where the inorganic insulating layer can be removed. The location where the organic material layer 660 is formed may be the bending area where the substrate 100 is bent.

[0097] The organic material layer 660 not only compensates for the height difference in the bending area where the inorganic insulating layer can be removed, but also absorbs the stress generated by bending. Therefore, it is possible to effectively minimize the stress concentration generated on the first connector 412 and the second connector 422 located in the bending area during bending.

[0098] The organic material layer 660 may include at least one material selected from acrylic acid, methacrylamide, polyester, polyethylene, polypropylene, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, and hexamethyldisiloxane.

[0099] Figure 7 According to the implementation method Figure 1 Plan view of area A. Figure 8 yes Figure 7 Plan view of area C. Figure 7 and Figure 8 Showing with Figure 3 and Figure 4 The same location. Therefore, the similar descriptions already given above have been omitted.

[0100] Reference Figure 7 and Figure 8 The first voltage line 410 is arranged on one side of the display area DA and the pad area PADA (see, for example, see...). Figure 1 The second voltage line 420 may surround the remaining sides of the display area DA.

[0101] In this configuration, the first limiting dam 610 and the second limiting dam 620 are located at the display area DA and the pad area PADA (see, for example, see...). Figure 1 On the second voltage line 420 between the display area DA and the pad area PADA (see, for example, see...), and the outer end 420b of the second voltage line 420 is covered by the dam 630. That is, compared with the case where the outer end 420b of the second voltage line 420 is covered by the first limiting dam 610, in the case where the display area DA and the pad area PADA (see, for example, see...) Figure 1 The width of the second voltage line 420 between them can be increased.

[0102] Additionally, the area of ​​the first voltage line 410 can be enlarged to make the display area DA and the pad area PADA (for example, see...) Figure 1The first voltage line 410 faces the pad area PADA (see, for example, see...) Figure 1 The outer end 410b of the ) is covered by the dike 630. (See reference...) Figure 1 As described, a pair of second connectors 422 can be respectively connected to opposite ends of the second voltage line 420, and the first voltage line 410 can be connected to a pair of first connectors 412 located between the pair of second connectors 422. In this case, in the display area DA and the pad area PADA (e.g., see...), Figure 1 The area where the outer end 410b of the first voltage line 410 is covered by the dike 630 is between the opposite ends of the second voltage line 420 or between a pair of second connectors 422. For example, when a pair of second connectors 422 are adjacent to a pair of first connectors 412, the distance between the outer end 410b of the first voltage line 410 between the pair of first connectors 412 and the display area DA can be increased so that the outer end 410b is covered by the dike 630. With this configuration, the resistance of the first voltage line 410 can be reduced, and short circuits between the first voltage line 410 and the second voltage line 420 can be prevented simultaneously. For example, the outer end 420b of the second voltage line 420 and the outer end 410b of the first voltage line 410 can be located on the same straight line. Therefore, since the area of ​​the first voltage line 410 and the area of ​​the second voltage line 420 are increased, even if the display device 10 is reduced (for example, see...), the resistance of the first voltage line 410 is reduced, and the resistance of the second voltage line 420 is prevented ... Figure 1 The dead zone of the display device 10 can also prevent the display device 10 (for example, see...) Figure 1 Increased power consumption and deterioration of display quality.

[0103] According to the implementation method, since the width of the voltage line extends to the embankment, even if the dead zone of the display device is reduced, the power consumption of the display device and the degradation of display quality can be prevented.

[0104] It should be understood that the embodiments described herein are to be considered in a descriptive manner only and not for limiting purposes. The description of features or aspects within each embodiment should generally be regarded as applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope and spirit as defined by the following claims.

Claims

1. A display device, comprising: A substrate, the substrate including a display area, a non-display area and a pad area, the non-display area being outside the display area and the pad area being in one side of the non-display area; A first limiting dam, the first limiting dam being in the non-display area and surrounding the display area; A second limiting dam is located in the non-display area and surrounds the display area between the display area and the first limiting dam. A dike, located outside the first limiting dam; as well as A voltage line, configured to supply voltage to the display elements within the display area. Wherein, the first limiting dam and the second limiting dam are located on the voltage line between the display area and the pad area, and the voltage line extends beyond the first limiting dam to the embankment. The voltage line includes a second voltage line, which comprises a first portion and a connector. The first portion extends along one side of the substrate in a first direction between the display area and the pad area. The connector extends toward the pad area in a second direction intersecting the first direction. In the outer end of the first portion parallel to the first direction, the outer end near the pad area is covered by the dike.

2. The display device as claimed in claim 1, wherein, The voltage line further includes a first voltage line between the display area and the pad area, and a second voltage line surrounding the opposite ends of the first voltage line and at least a portion of the display area.

3. The display device as claimed in claim 2, wherein, Between the display area and the pad area, the difference between the width of the dam and the width of the second voltage line is 1.5 μm or greater, the width of the dam is measured in a direction perpendicular to the length direction of the dam, and the width of the second voltage line is covered by the dam.

4. The display device as claimed in claim 3, wherein, The distance between the outer end of the second voltage line and the outer surface of the dam is 1.5 μm or greater.

5. The display device as claimed in claim 2, wherein, The outer end of the first voltage line facing the pad area is covered by the dike between the two opposite ends of the second voltage line.

6. The display device as claimed in claim 5, wherein, The outer ends of the first voltage line and the outer ends of the second voltage line are on the same line.

7. The display device as claimed in claim 2, wherein, The second voltage line extends from the area surrounding the display area to the outside of the embankment.

8. The display device of claim 7, further comprising: A crack-resistant portion extending along the edge of the substrate, the crack-resistant portion being formed by removing a portion of an inorganic layer stacked on the substrate; as well as A capping layer that covers the crack-resistant portion. The end of the second voltage line extending to the outside of the dike is covered by the capping layer.

9. The display device as claimed in claim 2, wherein, The height of the second limiting dam is less than the height of the first limiting dam, and The first limiting dam and the second limiting dam are located on the second voltage line between the display area and the pad area.

10. The display device of claim 1, further comprising: An encapsulation layer is provided on the display element and comprises a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer that are sequentially stacked. The first inorganic encapsulation layer is in direct contact with the voltage line between the display area and the pad area.

Images