Display device and method of manufacturing the same

Abstract

A display device and a manufacturing method thereof are disclosed. The display device includes a support substrate including a high molecular substance; a base substrate coupled to an upper surface of the support substrate and including an organic film including a high molecular substance and an inorganic barrier film covering the organic film and extending outward from the organic film; a pixel array disposed in a display area of the base substrate; a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array; and an organic filling portion disposed under the transfer wiring in the bending area of the base substrate and in contact with the organic film of the base substrate.

Description

Technical Field

[0001] This invention relates to a display device, and more specifically, to an organic light-emitting display device and a method for manufacturing the same. Background Technology

[0002] Organic light-emitting display devices can be driven with low power because they do not require a separate light source, and can be manufactured in a thin and light form, making them excellent as display devices.

[0003] The organic light-emitting display device may include a flexible substrate formed of polymers or the like. For example, the flexible substrate may be formed on a carrier substrate such as a glass substrate. After forming driving elements, light-emitting elements, encapsulation layers, etc., on the flexible substrate, the organic light-emitting display device with the flexible substrate may be formed by removing the carrier substrate.

[0004] During the formation of the drive element, the flexible substrate and the carrier substrate need to be stably bonded together. Summary of the Invention

[0005] The purpose of this invention is to provide a display device with improved reliability.

[0006] Another object of the present invention is to provide a method for manufacturing a display device with improved reliability.

[0007] However, the present invention is not limited to the above-described objectives, and various extensions can be made without departing from the concept and scope of the present invention.

[0008] To achieve the aforementioned objectives of the present invention, a display device according to an exemplary embodiment of the present invention includes: a support substrate comprising a polymeric material; a base substrate bonded to the upper surface of the support substrate and comprising an organic film comprising the polymeric material and an inorganic barrier film covering the organic film and extending outward from the organic film; a pixel array disposed in a display area of ​​the base substrate; transmission wiring disposed in a curved area of ​​the base substrate and electrically connected to the pixel array; and an organic filler portion disposed in the curved area of ​​the base substrate below the transmission wiring and in contact with the organic film of the base substrate.

[0009] According to one embodiment, the length of the portion of the inorganic barrier membrane protruding outward from the organic membrane is 3 mm or more.

[0010] According to one embodiment, the pixel array includes organic light-emitting diodes and transistors for driving the organic light-emitting diodes.

[0011] According to one embodiment, the transistor includes a first transistor comprising a polysilicon channel and a second transistor comprising a metal oxide channel.

[0012] A method for manufacturing a display device according to an exemplary embodiment of the present invention includes: forming a substrate substrate on a carrier substrate comprising an organic film containing a polymer and an inorganic barrier film covering the organic film and extending outward from the organic film; forming a first active pattern comprising a semiconductor material on a display area of ​​the substrate substrate; forming a first interlayer insulating layer on the first active pattern; forming a second active pattern comprising a semiconductor material different from the first active pattern on the first interlayer insulating layer in the display area of ​​the substrate substrate; forming a second interlayer insulating layer on the second active pattern; and forming a photoresist film on the second interlayer insulating layer. The steps include: exposing the photoresist film using a first mask comprising a first transmissive region overlapping the first active pattern or the second active pattern and a second transmissive region spaced apart from the edge of the carrier substrate and the edge of the organic film; exposing the edge region of the photoresist film overlapping the edge of the carrier substrate; developing the exposed photoresist film to form a first photoresist pattern comprising a first opening region overlapping the first active pattern or the second active pattern and exposing a region adjacent to the edge of the carrier substrate; and using the first photoresist pattern as a mask to form contact holes exposing the first active pattern or the second active pattern.

[0013] According to one embodiment, the first mask further includes a third transmission region overlapping the curved region of the substrate, and the first photoresist pattern further includes a second opening region overlapping the curved region, wherein the second interlayer insulating layer exposed through the second opening region is etched when the contact hole is formed.

[0014] According to one embodiment, the contact hole exposes the first active pattern. The method of manufacturing the display device further includes: forming a second photoresist pattern on a second interlayer insulating layer, comprising a first opening region overlapping the second active pattern and a second opening region overlapping the curved region; using the second photoresist pattern as a mask to form a contact hole exposing the second active pattern; forming a first source metal pattern comprising a first source electrode electrically contacting the first active pattern, a first drain electrode spaced apart from and electrically contacting the first active pattern, a second source electrode electrically contacting the second active pattern, and a second drain electrode spaced apart from and electrically contacting the second active pattern; forming a third photoresist pattern covering the first source metal pattern and including an opening region overlapping the curved region; and using the third photoresist pattern as a mask to etch the inorganic barrier film in the curved region to expose the organic film.

[0015] According to one embodiment, the method of manufacturing the display device further includes the step of forming an organic filler portion on the exposed organic film.

[0016] According to one embodiment, the method of manufacturing the display device further includes the step of forming a second source metal pattern comprising a transmission wiring disposed on the organic filler portion and a connection electrode electrically contacting the first drain electrode.

[0017] According to one embodiment, after etching the inorganic barrier film in the curved region, the length of the inorganic barrier film remaining on the carrier substrate and protruding outward from the organic film is 3 mm or more.

[0018] According to one embodiment, the second transmission region overlaps with an inorganic barrier film extending outward from the organic film.

[0019] According to one embodiment, the second transmission region has a shape that extends along the edge of the carrier substrate.

[0020] According to one embodiment, the edge region of the photoresist film is exposed without a mask.

[0021] According to one embodiment, the exposed edge region partially overlaps with the region exposed through the second transmission region.

[0022] According to one embodiment, the exposed edge region has a frame shape surrounding the substrate.

[0023] According to one embodiment, the first active pattern comprises polysilicon, and the second active pattern comprises metal oxide.

[0024] According to one embodiment, the method for manufacturing the display device further includes the step of separating the carrier substrate from the substrate.

[0025] A method for manufacturing a display device according to an exemplary embodiment of the present invention includes: forming a substrate on a carrier substrate comprising an organic film containing a polymer and an inorganic barrier film covering the organic film and extending outward from the organic film; forming an active pattern containing a semiconductor material on a display area of ​​the substrate substrate; forming an interlayer insulating layer containing an inorganic material on the active pattern; forming a photoresist film on the interlayer insulating layer; exposing the photoresist film through a mask comprising a first transmission region overlapping the active pattern and a second transmission region spaced apart from the edge of the carrier substrate and spaced apart from the edge of the organic film; exposing an edge region of the photoresist film overlapping the edge of the carrier substrate; developing the exposed photoresist film to form a first photoresist pattern comprising a first opening region overlapping the active pattern and exposing a region adjacent to the edge of the carrier substrate; and using the first photoresist pattern as a mask to form contact holes exposing the active pattern.

[0026] (Invention Effects)

[0027] According to an exemplary embodiment of the present invention, by reducing the area of ​​edge exposure with relatively large process errors and exposing the peripheral area of ​​the carrier substrate by a mask, it is possible to prevent photoresist residue in the peripheral area of ​​the carrier substrate while substantially increasing the area of ​​the inorganic layer residue area of ​​the substrate.

[0028] Furthermore, according to an embodiment of the present invention, the inorganic layer is removed in the curved region of the display device, thereby preventing the display device from becoming less reliable due to cracks or other defects in the inorganic layer. Attached Figure Description

[0029] Figure 1 , Figure 7 as well as Figure 12 This is a plan view illustrating a method for manufacturing a display device according to an embodiment of the present invention.

[0030] Figures 2 to 6 , Figures 8 to 11 as well as Figures 13 to 33 This is a cross-sectional view illustrating a method for manufacturing a display device according to an embodiment of the present invention. Detailed Implementation

[0031] Hereinafter, with reference to the accompanying drawings, a display device according to an exemplary embodiment of the present invention and a method for manufacturing the display device will be described in detail.

[0032] Figure 1 , Figure 7 as well as Figure 12 This is a plan view illustrating a method for manufacturing a display device according to an embodiment of the present invention. Figures 2 to 6 , Figures 8 to 11 as well as Figures 13 to 33 This is a cross-sectional view illustrating a method for manufacturing a display device according to an embodiment of the present invention. Figure 2 , Figure 4 , Figure 8 , Figure 13 , Figure 16 , Figure 19 , Figure 23 , Figure 26 , Figure 29 , Figure 31 as well as Figure 32 It can be shown Figure 1 A cross-section of the pixel region. Figure 3 , Figure 5 , Figure 9 , Figure 11 , Figure 14 , Figure 17 , Figure 20 , Figure 22 , Figure 24 , Figure 27 as well as Figure 33 It can be shown along Figure 1 The cross section intercepted by the I-I' line. Figure 6 , Figure 10 , Figure 15 , Figure 18 , Figure 21 , Figure 25 , Figure 28 as well as Figure 30 It can be shown along Figure 1 The cross section taken from line II-II'.

[0033] Reference Figures 1 to 3 A substrate 100 is formed on a carrier substrate CS.

[0034] The carrier substrate CS may contain a rigid material. For example, the carrier substrate CS may contain glass, quartz, etc.

[0035] The substrate 100 may have a multilayer structure of organic films and inorganic barrier films. For example, the substrate 100 may include a first organic film 100a, a first inorganic barrier film 100b, a second organic film 100c, and a second inorganic barrier film 100d stacked sequentially. However, embodiments of the present invention are not limited thereto, and the substrate 100 may also include three or more organic films and three or more barrier films, or include one organic film and one barrier film.

[0036] The first organic film 100a and the second organic film 100c may contain polymeric substances. For example, the first organic film 100a and the second organic film 100c may respectively contain polyethylene terephthalate, polyethylene naphthalate, polyetherketone, polycarbonate, polyarylate, polyethersulfone, polyimide, etc. For example, the first organic film 100a can be formed by coating a composition containing a polymer or polymeric precursor onto the carrier substrate CS and then drying or curing it. The second organic film 100c can be formed on the first inorganic barrier film 100b by a method similar to that of the first organic film 100a. According to one embodiment, the first organic film 100a may be in contact with the top surface of the carrier substrate CS.

[0037] For example, the first inorganic barrier film 100b and the second inorganic barrier film 100d may contain inorganic materials. For example, the first inorganic barrier film 100b and the second inorganic barrier film 100d may contain silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof. The first inorganic barrier film 100b and the second inorganic barrier film 100d may be formed by vacuum deposition, chemical vapor deposition (CVD), or the like.

[0038] like Figure 3 As shown, the first inorganic barrier film 100b and the second inorganic barrier film 100d can be formed to have a width greater than that of the first organic film 100a and the second organic film 100c. For example, the first inorganic barrier film 100b can extend outward from the first organic film 100a and partially contact the carrier substrate CS. The second inorganic barrier film 100d can extend outward from the second organic film 100c and partially contact the first inorganic barrier film 100b.

[0039] According to one embodiment, the first inorganic barrier film 100b and the second inorganic barrier film 100d can be deposited using the same mask, and their edges are substantially consistent in a plan view. However, embodiments of the present invention are not limited thereto, and the edges of the first inorganic barrier film 100b and the second inorganic barrier film 100d can also be spaced apart from each other in the horizontal direction.

[0040] Reference Figure 1 as well as Figure 3 The edge of the substrate 100 can be separated from the edge of the carrier substrate CS.

[0041] The substrate 100 may include a display area DA, a bending area BA, and a connection area CA. An array of pixel areas PX may be formed in the display area DA. Pad portions for electrical connection with a driving device may be formed in the connection area CA. The bending area BA may be bent such that the connection area CA can be positioned below the display area DA.

[0042] Reference Figure 4 A buffer layer 110 is formed on the substrate 100. In the pixel region PX, a first active pattern AP1 is formed on the buffer layer 110.

[0043] The buffer layer 110 can reduce or block the penetration of foreign matter, moisture, or external gases from below the substrate 100 and can planarize the top surface of the substrate 100. The buffer layer 110 may contain inorganic materials. For example, the buffer layer 110 may contain silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof, and may have a single-layer structure or a multilayer structure containing different materials.

[0044] According to one embodiment, the first active pattern AP1 may comprise polysilicon. For example, after forming an amorphous silicon layer on the buffer layer 110, the amorphous silicon layer may be crystallized to form a polysilicon layer.

[0045] For example, the amorphous silicon layer can be formed by sputtering, low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), etc. The amorphous silicon layer can be crystallized by excimer laser annealing, sequential lateral solidification, etc.

[0046] For example, in order to planarize the surface, the polycrystalline silicon layer can be polished by chemical mechanical polishing (CMP) or patterned by photolithography to form semiconductor patterns.

[0047] At least a portion of the semiconductor pattern is doped with impurities. According to one embodiment, the impurity may be a P-type impurity such as boron. However, embodiments of the invention are not limited to this; N-type impurities such as phosphorus and arsenic may also be doped. For example, the N-type impurities may be doped at high and low concentrations in different regions.

[0048] For example, the doping of the semiconductor pattern can be performed after the formation of the first gate electrode GE1, using the first gate electrode GE1 or the photoresist pattern used to form the first gate electrode GE1 as a mask.

[0049] Therefore, impurities can be doped in the peripheral portion of the semiconductor pattern that does not overlap with the first gate electrode GE1 to form a first doped region PD1 and a second doped region PD2. The portion of the semiconductor pattern that overlaps with the first gate electrode GE1 remains undoped, thus defining the channel region CH.

[0050] Therefore, the first doped region PD1, the second doped region PD2, and the channel region CH can be continuously configured in the same layer, and the pattern including the first doped region PD1, the second doped region PD2, and the channel region CH can be defined as the first active pattern AP1.

[0051] The first insulating layer 120 may contain inorganic materials. For example, the first insulating layer 120 may contain silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof, and may also contain insulating metal oxides such as aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, and titanium oxide. For example, the first insulating layer 120 may have a single-layer or multi-layer structure of silicon nitride or silicon oxide. The first insulating layer 120 may be referred to as the first gate insulating layer.

[0052] A first gate metal layer is formed on the first insulating layer 120, and a first gate metal pattern including the first gate electrode GE1 is formed by patterning the first gate metal layer. A second insulating layer 130 is formed on the first gate metal pattern. A second gate metal layer is formed on the second insulating layer 130, and a second gate metal pattern including a capacitor pattern CP is formed by patterning the first gate metal layer. A third insulating layer 140 is formed on the second gate metal pattern.

[0053] The first gate metal layer and the second gate metal layer may respectively comprise metals, metal alloys, metal nitrides, conductive metal oxides, etc. For example, the first gate metal layer and the second gate metal layer may respectively comprise gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), or alloys thereof, and may have a single-layer structure or a multilayer structure comprising different metal layers.

[0054] For example, the capacitor pattern CP can define the capacitor electrodes of the storage capacitor. The second gate metal pattern may also include a lower gate pattern BG. The lower gate pattern BG can be configured below the subsequently formed second active pattern AP2 to block light or function as a lower gate electrode. The second gate metal pattern may also include signal wiring for providing initialization signals, light emission signals, etc.

[0055] The second insulating layer 130 and the third insulating layer 140 may each contain inorganic materials. For example, the second insulating layer 130 and the third insulating layer 140 may each contain silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof, and may also each contain insulating metal oxides such as aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, and titanium oxide. For example, the second insulating layer 130 may contain silicon nitride, and the third insulating layer 140 may contain silicon oxide. The second insulating layer 130 may be referred to as the second gate insulating layer, and the third insulating layer 140 may be referred to as the first interlayer insulating layer.

[0056] A second active pattern AP2 is formed on the third insulating layer 140. A fourth insulating layer 150 is formed on the second active pattern AP2. A third gate metal pattern including a second gate electrode GE2 is formed on the fourth insulating layer 150. A fifth insulating layer 160 is formed on the third gate metal pattern.

[0057] The second active pattern AP2 comprises an oxide semiconductor. For example, the second active pattern AP2 may comprise binary compounds (ABx), ternary compounds (ABxCy), quaternary compounds (ABxCyDz) containing indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. For example, the second active pattern AP2 may include zinc oxide (ZnOx), gallium oxide (GaOx), titanium oxide (TiOx), tin oxide (SnOx), indium oxide (InOx), indium-gallium oxide (IGO), indium-zinc oxide (IZO), indium-tin oxide (ITO), gallium-zinc oxide (GZO), zinc-magnesium oxide (ZMO), zinc-tin oxide (ZTO), zinc-zirconium oxide (ZnZrxOy), indium-gallium-zinc oxide (IGZO), indium-zinc-tin oxide (IZTO), indium-gallium-hafnium oxide (IGHO), tin-aluminum-zinc oxide (TAZO), and indium-gallium-tin oxide (IGTO), etc.

[0058] The fourth insulating layer 150 and the fifth insulating layer 160 may each contain inorganic materials. For example, the fourth insulating layer 150 and the fifth insulating layer 160 may each contain silicon oxide, silicon nitride, silicon oxynitride, or combinations thereof, and may also each contain insulating metal oxides such as aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, and titanium oxide. For example, the fourth insulating layer 150 and the fifth insulating layer 160 may each contain silicon oxide. The fourth insulating layer 150 may be referred to as the third gate insulating layer, and the fifth insulating layer 160 may be referred to as the second interlayer insulating layer.

[0059] The third gate metal layer may comprise a metal, a metal alloy, a metal nitride, a conductive metal oxide, etc. For example, the third gate metal layer may comprise gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), or alloys thereof, and may have a single-layer structure or a multilayer structure comprising different metal layers.

[0060] Reference Figure 5 At least one of the buffer layer 110, the first insulating layer 120, the second insulating layer 130, the third insulating layer 140, the fourth insulating layer 150, and the fifth insulating layer 160 may extend toward the peripheral region of the substrate 100 and toward the outer side of the organic films 100a and 100c of the substrate 100. The buffer layer 110, the first insulating layer 120, the second insulating layer 130, the third insulating layer 140, the fourth insulating layer 150, and the fifth insulating layer 160 may be deposited using the same mask to have the same planar shape. However, embodiments of the present invention are not limited thereto; the edges of the insulating layers may also be horizontally spaced apart from each other.

[0061] Reference Figure 6 At least one of the buffer layer 110, the first insulating layer 120, the second insulating layer 130, the third insulating layer 140, the fourth insulating layer 150, and the fifth insulating layer 160 may extend toward the bending region BA and be disposed on the substrate 100.

[0062] Figure 7 This is a plan view illustrating a method for manufacturing a display device according to an embodiment of the present invention, in which a first mask is used to form a contact hole. Figure 12 This is a plan view showing the exposure area of ​​the first photoresist film in a method for manufacturing a display device according to an embodiment of the present invention.

[0063] Reference Figures 7 to 10A first photoresist film PL1 is formed by coating a photoresist composition onto the fifth insulating layer 160. For example, the photoresist composition may be a positive photoresist composition containing a photoacid-generating agent. The first photoresist film PL1 formed by the positive photoresist composition has increased solubility in the exposed area, thereby allowing the exposed area to be removed by development.

[0064] According to one embodiment, the first mask MK1 used to expose the first photoresist film PL1 may include a first transmission region TA1a, a second transmission region TA1b, and a third transmission region TA1c.

[0065] The first transmission region TA1a may overlap with the pixel region PX of the substrate 100. For example, the first exposure region EP1a of the first photoresist film PL1 exposed through the first transmission region TA1a may overlap with the doped regions PD1 and PD2 of the first active pattern AP1.

[0066] The second transmission region TA1b may overlap with the peripheral region of the substrate 100 or the carrier substrate CS. For example, the second exposure region EP1b of the first photoresist film PL1 exposed through the second transmission region TA1b may have a shape extending along at least one edge of the carrier substrate CS. According to one embodiment, the second exposure region EP1b may be arranged along all four edges of the carrier substrate CS.

[0067] The second exposure region EP1b may be separated from the edge of the carrier substrate CS. In addition, the second exposure region EP1b may not overlap with the organic films 100a and 100c of the substrate 100, but may overlap with the inorganic layer extending outward from the organic films 100a and 100c of the substrate 100.

[0068] The inorganic layer may refer to at least one of the first to fifth insulating layers 120, 130, 140, 150, 160, the buffer layer 110, and the inorganic barrier film 100b, 100d of the substrate 100.

[0069] The third transmission region TA1c may overlap with the curved region of the substrate 100. For example, the third exposure region EP1c of the first photoresist film PL1 exposed through the third transmission region TA1c may overlap with the insulating layer disposed in the curved region.

[0070] Reference Figure 11The peripheral area of ​​the carrier substrate CS is exposed after the mask exposure process. The edge exposure process can be performed without a mask. For example, the edge exposure process can be performed using an edge exposure unit 300 included in an exposure machine.

[0071] Reference Figure 12 The edge exposure region EP1d can overlap with the entire edge of the first photoresist film PL1. For example, the edge exposure region EP1d can have a frame shape surrounding the substrate 100.

[0072] Furthermore, the edge exposure area EP1d can partially overlap with the second exposure area EP1b. Therefore, the peripheral area of ​​the first photoresist film PL1 can be fully exposed.

[0073] Without performing the edge exposure, photoresist film may remain on the edges of the carrier substrate CS. In this case, it could cause malfunctions or process defects in subsequent processes such as transporting the carrier substrate CS.

[0074] Subsequently, a developer is provided to the first photoresist film PL1 to remove the exposed areas EP1a, EP1b, EP1c, and EP1d to form the first photoresist pattern PR1.

[0075] Reference Figure 13 The first photoresist pattern PR1 includes a first opening region PH1a that overlaps with the doped regions PD1 and PD2 of the first active pattern AP1.

[0076] Reference Figure 14 Through mask exposure and edge exposure, the first photoresist pattern PR1 is not configured in the peripheral region including the edge of the carrier substrate CS. A portion of the first photoresist pattern PR1 may be configured on an inorganic layer extending outward from the organic films 100a, 100c of the substrate 100.

[0077] On the outer side of the organic films 100a and 100c of the substrate 100, the area where the inorganic layer and the first photoresist pattern PR1 overlap can be defined as the first inorganic layer residual area IRA1, and the area that does not overlap with the first photoresist pattern PR1 can be defined as the first peripheral etch area GEA1. In the first peripheral etch area GEA1, the inorganic layer extending outward from the organic films 100a and 100c of the substrate 100, for example, the upper surface of the fifth insulating layer 160, can be exposed.

[0078] Reference Figure 15The first photoresist pattern PR1 includes a second opening region PH1b that overlaps with the curved region. Therefore, the insulating layer disposed below the first photoresist pattern PR1, such as the upper surface of the fifth insulating layer 160, can be exposed through the second opening region PH1b.

[0079] The first photoresist pattern PR1 is used as a mask to etch the layer beneath the first photoresist pattern PR1 to form contact holes that expose the first active pattern AP1. For example, dry etching can be performed for the etching process.

[0080] Reference Figure 16 In the pixel region PX, the fifth insulating layer 160, the fourth insulating layer 150, the third insulating layer 140, the second insulating layer 130, and the first insulating layer 120, disposed beneath the first photoresist pattern PR1, are etched to form a first contact hole CT1 and a second contact hole CT2. For example, the first contact hole CT1 may expose a first doped region PD1 of the first active pattern AP1, and the second contact hole CT2 may expose a second doped region PD2 of the first active pattern AP1.

[0081] Reference Figure 17 Etching can also be performed in the peripheral region of the carrier substrate CS. According to one embodiment, etching can be performed in the first peripheral etched region GEA1 where the first photoresist pattern PR1 is not disposed. For example, the fifth insulating layer 160, the fourth insulating layer 150, the third insulating layer 140, the second insulating layer 130, and the first insulating layer 120 can be etched to expose the upper surface of the buffer layer 110. However, embodiments of the present invention are not limited thereto, and the layers etched and the remaining layers in the first peripheral etched region GEA1 can vary depending on the etching depth, etc.

[0082] Reference Figure 18 Etching can be performed in curved areas where the first photoresist pattern PR1 is not configured. For example, the fifth insulating layer 160, the fourth insulating layer 150, the third insulating layer 140, the second insulating layer 130, and the first insulating layer 120 can be etched to expose the top surface of the buffer layer 110. However, embodiments of the present invention are not limited thereto, and the layers etched and the remaining layers in the curved areas can vary depending on the etching depth, etc.

[0083] After performing the first inorganic layer etching process, the first photoresist pattern PR1 is removed.

[0084] Reference Figures 19 to 21A second photoresist film PL2 is formed by coating a photoresist composition onto the fifth insulating layer 160.

[0085] According to one embodiment, the second mask MK2 used to expose the second photoresist film PL2 may include a first transmission region TA2a, a second transmission region TA2b, and a third transmission region TA2c.

[0086] The first transmission region TA2a can overlap with the pixel region PX of the substrate 100. For example, the first exposure region EP2a of the second photoresist film PL2 exposed through the first transmission region TA2a can overlap with the second active pattern AP2.

[0087] The second transmission region TA2b may overlap with the peripheral region of the substrate 100 or the carrier substrate CS. For example, the second exposure region EP2b of the second photoresist film PL2 exposed through the second transmission region TA2b may have a shape extending along at least one edge of the carrier substrate CS. According to one embodiment, with Figure 12 Similarly, as shown in the first photoresist film PL1, the second exposure region EP2b can be configured along the four sides of the carrier substrate CS.

[0088] The second exposure region EP2b may be separated from the edge of the carrier substrate CS. In addition, the second exposure region EP2b may not overlap with the organic films 100a and 100c of the substrate 100, but may overlap with the inorganic layer extending outward from the organic films 100a and 100c of the substrate 100.

[0089] The third transmission region TA2c may overlap with the curved region of the substrate 100. For example, the third exposure region EP2c of the second photoresist film PL2 exposed through the third transmission region TA2c may overlap with the inorganic layer disposed in the curved region.

[0090] Reference Figure 22 The peripheral area of ​​the carrier substrate CS is exposed after the mask exposure process. The edge exposure process can be performed without a mask.

[0091] The edge exposure region EP2d can overlap with the entire edge of the second photoresist film PL2. Additionally, the edge exposure region EP2d can partially overlap with the second exposure region EP2b. Therefore, the peripheral area of ​​the second photoresist film PL2 can be fully exposed.

[0092] Next, a developer is applied to the second photoresist film PL2 to remove the exposed areas EP2a, EP2b, EP2c, and EP2d to form a second photoresist pattern PR2. Then, the layer beneath the second photoresist pattern PR2 is etched using the second photoresist pattern PR2 to form contact holes exposing the second active pattern AP2.

[0093] Reference Figure 23 The second photoresist pattern PR2 includes a first opening region that overlaps with the second active pattern AP2. The fifth insulating layer 160 and the fourth insulating layer 150 beneath the second photoresist pattern PR2 are etched to form a third contact hole CT3 and a fourth contact hole CT4 that correspond to the first opening region and expose the second active pattern AP2.

[0094] Reference Figure 24 Through the mask exposure and the edge exposure, the second photoresist pattern PR2 is not formed in the peripheral region including the edge of the carrier substrate CS. A portion of the second photoresist pattern PR2 may be disposed on an inorganic layer extending outward from the organic films 100a and 100c of the substrate 100.

[0095] On the outer side of the organic films 100a and 100c of the substrate 100, the area where the inorganic layer and the second photoresist pattern PR2 overlap can be defined as the second inorganic layer residual area IRA2, and the area that does not overlap with the second photoresist pattern PR2 can be defined as the second peripheral etch area GEA2. In the second peripheral etch area GEA2, the exposed inorganic layer can be etched.

[0096] The etching thickness of the inorganic layer can vary depending on the thickness and etching depth of the etched inorganic layer. According to one embodiment, the sum of the thickness of the buffer layer 110 and the thickness of the second inorganic barrier film 100d can be greater than the sum of the thicknesses of the fourth insulating layer 150 and the fifth insulating layer 160.

[0097] For example, the buffer layer 110 may be etched in the second peripheral etch region GEA2, leaving the second inorganic barrier film 100d of the substrate 100.

[0098] Reference Figure 25 The second photoresist pattern PR2 may include a second opening region overlapping the curved region, and the inorganic layer overlapping the second opening region may be etched. For example, the buffer layer 110 may be etched in the curved region, exposing the second inorganic barrier film 100d of the substrate 100.

[0099] After performing the second inorganic layer etching process, the second photoresist pattern PR2 is removed.

[0100] Reference Figure 26 A first source metal layer is formed on the fifth insulating layer 160 and patterned to form a first source metal pattern including a first source electrode SE1, a first drain electrode DE1, a second source electrode SE2 and a second drain electrode DE2.

[0101] The first source metal layer may comprise a metal, a metal alloy, a metal nitride, a conductive metal oxide, etc. For example, the first source metal layer may comprise gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), or alloys thereof, and may have a single-layer structure or a multilayer structure comprising different metal layers.

[0102] The first active pattern AP1, the first gate electrode GE1, the first source electrode SE1, and the first drain electrode DE1 can constitute a first transistor. For example, the first transistor including a polysilicon channel can function as a driving transistor to provide current to an organic light-emitting diode.

[0103] The second active pattern AP2, the second gate electrode GE2, the second source electrode SE2, and the second drain electrode DE2 can constitute a second transistor. For example, the second transistor, including a metal-oxide channel, can function as a switching transistor to operate the first transistor.

[0104] However, the embodiments of the present invention are not limited thereto. In another embodiment, the first transistor may act as a switching transistor and the second transistor may act as a driving transistor.

[0105] A third photoresist pattern PR3 is formed on top of the first source metal pattern, and the third photoresist pattern PR3 is used as a mask to etch the inorganic layer remaining in the curved region. If the inorganic layer remains in the curved region, cracks in the inorganic layer may occur, reducing the reliability of the display device.

[0106] The third mask used to form the third photoresist pattern PR3 includes at least a transmissive region corresponding to the curved region. Similar to the first mask MK1 and the second mask MK2, the third mask may include a transmissive region overlapping the peripheral region of the substrate 100 or the carrier substrate CS. However, embodiments of the present invention are not limited thereto. For example, the third mask may also include only the transmissive region corresponding to the curved region.

[0107] Reference Figure 27 The third photoresist pattern PR3 is not formed in the peripheral region including the edge of the carrier substrate CS. A portion of the third photoresist pattern PR3 may be disposed on an inorganic layer extending outward from the organic films 100a and 100c of the substrate 100.

[0108] On the outer side of the organic films 100a and 100c of the substrate 100, the area where the inorganic layer and the third photoresist pattern PR3 overlap can be defined as the third inorganic layer residual area IRA3, and the area where it does not overlap with the third photoresist pattern PR3 can be defined as the third peripheral etching area GEA3.

[0109] As the etching process proceeds, the inorganic layer remaining in the third peripheral etched region GEA3 is removed. Therefore, the upper surface of the carrier substrate CS can be exposed in the third peripheral etched region GEA3. However, embodiments of the present invention are not limited to this; depending on the etching depth, the first inorganic barrier film 100b, etc., may remain in the third peripheral etched region GEA3. Therefore, the actual width of the inorganic film residue area can be greater than the width of the third inorganic layer residue area IRA3. Preferably, the width of the inorganic film residue area can be 3 mm or more, but embodiments of the present invention are not limited to this.

[0110] In addition, the width of the inorganic film residue area, the distance between the edge of the inorganic film residue area and the edge of the carrier substrate CS, and the distance between the edge of the organic film 100a, 100c of the substrate 100 and the edge of the carrier substrate CS can be changed in various ways as needed, and can also be designed to be different from each other in terms of direction.

[0111] Reference Figure 28 The third photoresist pattern PR3 includes an opening region that overlaps with the curved region. As the etching process proceeds, the inorganic layer overlapping the opening region is removed. Therefore, the upper surface of the second organic film 100c on the substrate can be exposed in the curved region. For example, the second inorganic barrier film 100d above the second organic film 100c in the curved region can be removed.

[0112] After performing the third inorganic layer etching process, the third photoresist pattern PR3 is removed.

[0113] As described above, when the inorganic layer etching process is repeated, the area of ​​the inorganic layer residue region in the peripheral region of the substrate 100 can be reduced by edge exposure. Therefore, the adhesion between the substrate 100 and the carrier substrate CS is reduced, which may lead to unforeseen separation. Furthermore, if the edge exposure area is reduced to ensure the area of ​​the inorganic layer residue region, photoresist residue may remain in the peripheral region of the carrier substrate CS, causing process defects.

[0114] According to an embodiment of the present invention, by reducing the area of ​​edge exposure with relatively large process errors and exposing the peripheral area of ​​the carrier substrate CS by mask exposure, it is possible to prevent photoresist residue in the peripheral area of ​​the carrier substrate CS while substantially increasing the area of ​​the inorganic layer residue area of ​​the substrate 100.

[0115] Furthermore, according to an embodiment of the present invention, the inorganic layer is removed in the curved region of the display device, thereby preventing the display device from becoming less reliable due to cracks or other defects in the inorganic layer.

[0116] According to one embodiment, although the exposure of the peripheral region of the carrier substrate CS through the mask is performed in both the first inorganic layer etching process and the second inorganic layer etching process, the embodiments of the present invention are not limited thereto. For example, the exposure of the peripheral region of the carrier substrate CS through the mask may also be performed in one of the first to third inorganic layer etching processes, or in all of the processes.

[0117] Furthermore, although the manufacturing method of the display device according to one embodiment includes a third inorganic layer etching process, the third inorganic layer etching process can be omitted by adjusting the etching depth in the first inorganic layer etching process or the second inorganic layer etching process.

[0118] Reference Figure 29 as well as Figure 30 A sixth insulating layer 170 is formed covering the first source metal pattern. Additionally, the sixth insulating layer 170 may fill the area in the curved region where the inorganic layer has been removed. The portion of the sixth insulating layer 170 filling the curved region may be referred to as an organic filler portion.

[0119] For example, the sixth insulating layer 170 may comprise organic insulating materials such as phenolic resin, acrylic resin, polyimide resin, polyamide resin, silicone resin, and epoxy resin. The sixth insulating layer 170 may be referred to as the first through-hole insulating layer.

[0120] A second source metal pattern, including a connection electrode CE, is formed on the sixth insulating layer 170. The second source metal pattern may also include a transmission wiring TL passing through the bending region. The transmission wiring TL may be connected to... Figure 1The pads of the connection area CA shown are electrically connected to transmit drive signals, drive power, etc., to the display area DA. Additionally, control signals can be transmitted to the drive section formed in the peripheral area of ​​the transmission wiring TL adjacent to the display area DA.

[0121] For example, the second source metal pattern may comprise metals, metal alloys, metal nitrides, conductive metal oxides, etc. For example, the second source metal pattern may comprise gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), or alloys thereof, and may have a single-layer or multi-layer structure comprising different metal layers.

[0122] Reference Figure 31 A seventh insulating layer 180 is formed on the second source metal pattern. The seventh insulating layer 180 is patterned to form contact holes that expose the connection electrode CE.

[0123] Subsequently, a first electrode layer is formed to fill the contact hole, and the first electrode layer is patterned to form the first electrode EL1 of the organic light-emitting diode.

[0124] For example, the seventh insulating layer 180 may comprise organic insulating materials such as phenolic resin, acrylic resin, polyimide resin, polyamide resin, silicone resin, and epoxy resin. The seventh insulating layer 180 may be referred to as the second through-hole insulating layer.

[0125] The first electrode EL1 can function as an anode. For example, the first electrode EL1 can be formed as a transmission electrode or a reflection electrode depending on the type of light emission. When the first electrode EL1 is formed as a transmission electrode, it may contain indium tin oxide, indium zinc oxide, zinc tin oxide, indium oxide, zinc oxide, tin oxide, etc. When the first electrode EL1 is formed as a reflection electrode, it may contain gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), etc., and may also have a structure stacked with the material used for the transmission electrode.

[0126] A pixel defining layer 190 is formed on the seventh insulating layer 180. The pixel defining layer 190 has an opening that exposes at least a portion of the first electrode EL1. For example, the pixel defining layer 190 may contain an organic insulating material.

[0127] An organic light-emitting layer OL is formed on the first electrode EL1. The organic light-emitting layer OL may include at least a light-emitting layer, and may also include one or more functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. The organic light-emitting layer OL may contain low-molecular-weight organic compounds or high-molecular-weight organic compounds.

[0128] In one embodiment, the organic light-emitting layer OL can emit red, green, or blue light. In another embodiment, when the organic light-emitting layer OL emits white light, the organic light-emitting layer OL can include a multilayer structure comprising a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, or it can include a single-layer structure containing red, green, and blue light-emitting substances.

[0129] For example, the organic light-emitting layer OL can be formed by methods such as screen printing, inkjet printing, and deposition.

[0130] A second electrode EL2 is formed on the organic light-emitting layer OL. The second electrode EL2 can be formed as a transmission electrode or a reflection electrode depending on the type of light emission. For example, the second electrode EL2 can contain a metal, alloy, metal nitride, metal fluoride, conductive metal oxide, or a combination thereof.

[0131] For example, the second electrode EL2 can be distributed across multiple pixels and extend continuously over the display area. According to one embodiment, a cover layer and a blocking layer may also be formed on the second electrode EL2.

[0132] Subsequently, an encapsulation layer 200 can be formed on the organic light-emitting diode. For example, the encapsulation layer 200 may have a stacked structure of inorganic thin films 200a and 200c and an organic thin film 200b. For example, the organic thin film 200b may contain a cured polymer such as polyacrylate.

[0133] For example, the inorganic thin films 200a and 200c may contain silicon oxide, silicon nitride, silicon carbide, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc.

[0134] The carrier substrate CS can be separated from the substrate 100 after the encapsulation layer 200 is formed. For example, the carrier substrate CS and the substrate 100 can be separated using a laser or the like.

[0135] Reference Figure 32 After separating the carrier substrate CS, a support substrate SS can be attached to the underside of the base substrate 100. For example, an adhesive layer for bonding can be disposed between the base substrate 100 and the support substrate SS.

[0136] For example, the support substrate SS may contain polymers such as polymethyl methacrylate (PMMA), polycarbonate (PC), and polyethylene terephthalate (PET).

[0137] Reference Figure 33 In the peripheral region of the substrate 100, the inorganic layer may extend outward from the organic films 100a and 100c of the substrate 100. Therefore, the support substrate SS can be bonded to the underside of the organic films of the substrate 100 and to the underside of the inorganic layer extending outward from the organic films. For example, the support substrate SS can be bonded to the underside of the first organic film 100a and the underside of the first inorganic barrier film 100b of the substrate 100.

[0138] According to one embodiment, the width of the inorganic layer protrusion region IRA, which extends outward from the organic film and is directly bonded to the support substrate SS, can be 3 mm or more. For example, the width of the inorganic layer protrusion region IRA can be 3 mm or more and 5 mm or less.

[0139] While the invention has been described above with reference to exemplary embodiments, it should be understood that those skilled in the art can modify and alter the invention in various ways without departing from the concept and scope of the invention as set forth in the claims.

[0140] (Industry availability)

[0141] This invention is applicable to various display devices that can be equipped with organic light-emitting display devices. For example, this invention is applicable to various display devices such as vehicle display devices, ship display devices, aircraft display devices, portable communication devices, display devices for exhibition or information transmission, and medical display devices.

Claims

1. A method for manufacturing a display device, characterized in that, include: The step of forming a substrate substrate on a carrier substrate, comprising an organic film containing a polymer and an inorganic barrier film covering the organic film and extending outward from the organic film. The step of forming a first active pattern comprising semiconductor material on the display area of ​​the substrate; The step of forming a first interlayer insulating layer on the first active pattern; The step of forming a second active pattern comprising a semiconductor material different from the first active pattern on the first interlayer insulating layer in the display area of ​​the substrate; The step of forming a second interlayer insulating layer on the second active pattern; The step of forming a photoresist film on the second interlayer insulating layer; The step of exposing the photoresist film by means of a first mask including a first transmission region overlapping the first active pattern or the second active pattern and a second transmission region spaced apart from the edge of the carrier substrate and the edge of the organic film; The step of exposing the edge region of the photoresist film that overlaps with the edge of the carrier substrate; The step of developing the exposed photoresist film to form a first photoresist pattern including a first opening region overlapping the first active pattern or the second active pattern and exposing a region adjacent to the edge of the carrier substrate. as well as The step of using the first photoresist pattern as a mask to form contact holes that expose the first active pattern or the second active pattern.

2. The method for manufacturing a display device according to claim 1, characterized in that, The first mask further includes a third transmissive region overlapping the curved region of the substrate, and the first photoresist pattern further includes a second opening region overlapping the curved region. When the contact hole is formed, the second interlayer insulating layer exposed through the second opening region is etched.

3. The method for manufacturing a display device according to claim 2, characterized in that, The contact hole exposes the first active pattern. The method for manufacturing the display device further includes: The step of forming a second photoresist pattern on the second interlayer insulating layer, including a first opening region overlapping the second active pattern and a second opening region overlapping the curved region; The steps of using the second photoresist pattern as a mask to form a contact hole exposing the second active pattern; and forming a first source metal pattern including a first source electrode electrically contacting the first active pattern, a first drain electrode spaced apart from and electrically contacting the first active pattern, a second source electrode electrically contacting the second active pattern, and a second drain electrode spaced apart from and electrically contacting the second active pattern. The step of forming a third photoresist pattern covering the first source metal pattern and including an opening region overlapping the curved region; and The step of using the third photoresist pattern as a mask to etch the inorganic barrier film in the curved region to expose the organic film.

4. The method for manufacturing a display device according to claim 3, characterized in that, The method for manufacturing the display device further includes the step of forming an organic filler portion on the exposed organic film.

5. The method for manufacturing a display device according to claim 4, characterized in that, The method for manufacturing the display device further includes the step of forming a second source metal pattern comprising a transmission wiring disposed on the organic filler portion and a connection electrode electrically in contact with the first drain electrode.

6. The method for manufacturing a display device according to claim 3, characterized in that, After etching the inorganic barrier film in the curved region, the length of the inorganic barrier film remaining on the carrier substrate and protruding outward from the organic film is more than 3 mm.

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