An IGBT series-parallel compatible unit based on H-bridge rectification

Abstract

This invention discloses an IGBT series-parallel compatible unit based on H-bridge rectification. This compatible unit includes a valve string unit, a connection unit, and a diode valve string unit. The valve string unit comprises N groups of IGBT units, where N is not less than 1. The IGBT units are connected via conductive components to form a series or parallel structure, and adjacent IGBT units are mutually insulated. The connection unit includes a first copper busbar and a second copper busbar connected to the IGBT units respectively. The diode valve string unit, connected to the connection unit, includes a first diode valve string, a second diode valve string, and input / output copper busbars connecting the first and second diode valve strings. The main structure of the three valve strings remains unchanged. The connection via conductive components allows for compatible series-parallel crimping of odd-numbered and even-numbered IGBT valve strings, offering strong versatility, small size, low cost, and easy expansion to accommodate higher voltage and current levels.

Description

Technical Field

[0001] The present invention relates to the field of flexible DC transmission device technology, and in particular to an IGBT series-parallel compatible unit based on H-bridge rectification. Background Technology

[0002] Compared to conventional DC transmission, flexible DC transmission offers advantages such as flexible operation and control, high intelligence, independence from AC systems, and diverse operating modes, providing new solutions for scenarios like asynchronous grid interconnection and renewable energy integration. The realization of this advanced transmission technology relies heavily on the application of fully controllable power electronic devices. The Insulated Gate Bipolar Transistor (IGBT) is a representative of fully controllable power electronic devices and a core component in flexible DC transmission systems for controlling, transmitting, and converting electrical energy.

[0003] As voltage and current levels continue to increase, the cost of traditional IGBT valve strings in flexible DC transmission drive lines is becoming increasingly high, and the circuitry is becoming more complex. When IGBTs are used in series, the most common crimping methods are vertical and horizontal. When IGBTs are used in parallel, factors such as asymmetrical circuit layout can cause uneven current distribution through the IGBTs, significantly reducing device reliability. Furthermore, using multiple IGBTs in parallel crimping greatly increases the size of the valve string and hinders expansion. Summary of the Invention

[0004] The purpose of this section is to outline some aspects of embodiments of the present invention and to briefly describe some preferred embodiments. Simplifications or omissions may be made in this section, as well as in the abstract and title of this application, to avoid obscuring the purpose of these documents; however, such simplifications or omissions should not be construed as limiting the scope of the invention.

[0005] In view of the problems existing in the current IGBT valve string unit in flexible DC transmission, the present invention is proposed.

[0006] Therefore, the problem to be solved by the present invention is to provide an IGBT series-parallel compatible unit based on H-bridge rectification, which aims to solve the problem that IGBT valve string units cannot be connected in series and parallel and can only flow in one direction.

[0007] To solve the above-mentioned technical problems, the present invention provides the following technical solution: an IGBT series-parallel compatible unit based on H-bridge rectification, the compatible unit including a valve string unit, a connection unit, and a diode valve string unit, wherein the valve string unit includes N groups of IGBT units, and the number of N is not less than 1, the IGBT units are connected by conductive components to form a series structure or a parallel structure, and adjacent IGBT units are mutually insulated; the connection unit includes a first copper busbar and a second copper busbar respectively connected to the IGBT units; and the diode valve string unit is connected to the connection unit, and includes a first diode valve string, a second diode valve string, and input and output copper busbars connecting the first diode valve string and the second diode valve string.

[0008] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification according to the present invention, the IGBT unit includes an IGBT and a first conductive block and a second conductive block disposed on the upper and lower sides of the IGBT; and the first conductive block is connected to the emitter of the IGBT, and the second conductive block is connected to the collector of the IGBT.

[0009] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification described in this invention, the first conductive block and the second conductive block have flanges around their perimeters, and the flanges are provided with connection holes.

[0010] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification described in this invention, one end of the first copper busbar and the second copper busbar are respectively connected to the first conductive block and the second conductive block of the IGBT unit through the connection hole, and the other end is respectively connected to the first diode valve string and the second diode valve string.

[0011] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification described in this invention, the first diode valve string and the second diode valve string have the same structure; wherein, the first diode valve string includes a first diode conductive block and a first rectifier diode and a second rectifier diode located at the upper and lower ends of the diode pad; the second diode valve string includes a second diode conductive block and a third rectifier diode and a fourth rectifier diode located at the upper and lower ends of the second diode conductive block.

[0012] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification according to the present invention, wherein: the end of the first copper busbar away from the first conductive block is connected between the first diode conductive block and the positive terminal of the second rectifier diode; the end of the second copper busbar away from the second conductive block is connected between the negative terminal of the third rectifier diode and the second diode conductive block.

[0013] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification according to the present invention, the input and output copper busbars include a first input and output copper busbar and a second input and output copper busbar; wherein, the first input and output copper busbar is connected to the negative terminal of the first rectifier diode and the positive terminal of the third rectifier diode; the second input and output copper busbar is connected to the positive terminal of the second rectifier diode and the negative terminal of the fourth rectifier diode.

[0014] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification described in this invention, the adjacent IGBT units are insulated by setting insulating pads, and the ends of the first diode valve string and the second diode valve string are both provided with diode insulating pads.

[0015] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification according to the present invention, wherein: in the series structure, the number of N is greater than 1, and the conductive component has N-1 short-circuiting conductive elements; wherein each of the short-circuiting conductive elements sequentially connects the second conductive block of the N-1th group of IGBT units to the first conductive block of the adjacent Nth group of IGBT units.

[0016] As a preferred embodiment of the series-parallel compatible IGBT unit based on H-bridge rectification described in this invention, wherein: in the parallel structure, the number N is not less than 2, and the conductive components are 2N-2 in number, evenly divided into two groups, having a first parallel conductive group and a second parallel conductive group, and the two groups have the same structure and number, with symmetrical connection positions; wherein, the first parallel conductive group has N-1 first parallel conductive elements, wherein one end of the first first parallel conductive element is connected to the first conductive block of the IGBT unit in the first group, and the other end is connected to the first conductive block of the IGBT unit in the second group; and so on, the (N-1)th first parallel conductive element... One end of the first parallel conductive element is connected to the first conductive block of the IGBT unit in the first group, and the other end is connected to the first conductive block of the IGBT unit in the Nth group; the second parallel conductive group has N-1 second parallel conductive elements, wherein one end of the first second parallel conductive element is connected to the second conductive block of the IGBT unit in the Nth group, and the other end is connected to the second conductive block of the IGBT unit in the N-1th group; and so on, one end of the N-1th second parallel conductive element is connected to the second conductive block of the IGBT unit in the Nth group, and the other end is connected to the second conductive block of the IGBT unit in the first group.

[0017] The beneficial effects of this invention are:

[0018] (1) A set of IGBT valve strings and two sets of diode valve strings are pressed together, and the two sets of diode valve strings form an H-bridge rectifier structure, which enables the unidirectional IGBT valve group to flow bidirectionally, saving half the number of IGBTs and significantly reducing costs.

[0019] (2) The main structure of the three valve strings remains unchanged. They can be connected in parallel and press-fitted by conductive components to be compatible with odd-numbered and even-numbered IGBT valve strings. They are highly versatile, small in size, low in cost, and easy to expand to be applicable to higher voltage and current levels.

[0020] (3) The thickness of the insulating pad can be adjusted according to the voltage level of each IGBT unit, and the thickness of the diode conductive block can be adjusted according to the number of series and parallel stages of the IGBT unit. It has high compatibility, and the consistent height of the three valve strings is conducive to overall crimping.

[0021] (4) In the IGBT valve series-parallel structure, the conductive components of each group of IGBT units have equal lengths, the circuit layout is symmetrical, and the current distribution of each group of IGBT units is balanced, which greatly improves the reliability of the device. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0023] Figure 1 This is a schematic diagram of the overall structure of the IGBT series-parallel compatible unit based on H-bridge rectification of the present invention.

[0024] Figure 2 This is a schematic diagram of the IGBT valve string unit structure of the IGBT series-parallel compatible unit based on H-bridge rectification of the present invention.

[0025] Figure 3 This is a schematic diagram of the connection structure of the IGBT series-parallel compatible unit and the diode valve string unit based on H-bridge rectification in this invention.

[0026] Figure 4 This is an exploded view of the diode valve string unit of the IGBT series-parallel compatible unit based on H-bridge rectification of the present invention.

[0027] Figure 5 This is a schematic diagram of the C-connection method of the IGBT valve string unit series structure of the IGBT series-parallel compatible unit based on H-bridge rectification of the present invention.

[0028] Figure 6 This is a schematic diagram of the specific structure of the IGBT series-parallel compatible unit based on H-bridge rectification in this invention.

[0029] Figure 7 This is a schematic diagram of the parallel structure B of the IGBT valve series unit of the IGBT series-parallel compatible unit based on H-bridge rectification of the present invention.

[0030] Figure 8 This is a schematic diagram of the parallel connection method of the IGBT series-parallel compatible unit based on H-bridge rectification of the present invention. Detailed Implementation

[0031] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0032] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0033] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that is mutually exclusive with other embodiments.

[0034] Secondly, the present invention is described in detail with reference to the schematic diagrams. When detailing the embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not according to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In addition, actual fabrication should include three-dimensional spatial dimensions of length, width, and depth.

[0035] Example 1

[0036] Reference Figure 1 This invention provides a first embodiment of an IGBT series-parallel compatible unit based on H-bridge rectification. This compatible unit includes an IGBT valve string unit 100, a connection unit 200, and a diode valve string unit 300. The connection unit 200 connects the IGBT valve string unit 100 and the diode valve string unit 300. The diode valve string unit 300, by constructing an H-bridge rectification structure, enables bidirectional current flow through the unidirectional IGBT valve string unit 100, saving half the number of IGBT units 101 and significantly reducing costs.

[0037] Specifically, the IGBT valve string unit 100 includes N groups of IGBT units 101, where N is not less than 1. Each IGBT unit 101 is connected to the others via a conductive component 102, forming a series structure C or a parallel structure B. Adjacent IGBT units 101 are insulated from each other. The IGBT valve string unit 100 is formed by connecting several groups of IGBT units 101 through a series structure C or a parallel structure B, and each group of IGBT units is insulated from each other. The conductive component 102 is used to connect the groups of IGBT units 101 to form a series structure C or a parallel structure B, thereby achieving different flexible power transmission effects.

[0038] The connection unit 200 includes a first copper busbar 201 and a second copper busbar 202 respectively connected to the IGBT unit 101; wherein the first copper busbar 201 and the second copper busbar 202 connect the first diode valve string 301 and the second diode valve string 302 to the input terminal and the output terminal of the diode valve string unit 300 respectively, forming a connection circuit.

[0039] The diode valve string unit 300, connected to the connection unit 200, includes a first diode valve string 301, a second diode valve string 302, and input / output copper busbars 303 connecting the first diode valve string 301 and the second diode valve string 302. The first diode valve string 301 and the second diode valve string 302 are connected through the input / output copper busbars 303 to form an H-type rectifier circuit, realizing the transformation of the IGBT valve string unit 100 from unidirectional conduction to bidirectional conduction.

[0040] Example 2

[0041] Reference Figure 1 , 2 Examples 5-8 represent the second embodiment of the present invention. In this embodiment, the specific structure and composition of the IGBT valve string unit 100 are described in detail. The difference from the first embodiment is that the IGBT unit 101 includes an IGBT 101a and a first conductive block 101b and a second conductive block 101c disposed on the upper and lower sides of the IGBT 101a, respectively. The first conductive block 101b is connected to the emitter of the IGBT 101a, and the second conductive block 101c is connected to the collector of the IGBT 101a.

[0042] Compared to Embodiment 1, each group of IGBT units 101 has the same structure, including IGBT 101a, a first conductive block 101b, and a second conductive block 101c. Specifically, the first conductive block 101b is connected to the emitter of IGBT 101a, and the second conductive block 101c is connected to the collector of IGBT 101a. Each group of IGBT units 101 is independent of each other and is insulated from adjacent IGBT units 101. The insulation method uses IGBT insulating pads J, and the thickness of these insulating pads can be adjusted according to the voltage level that each group of IGBTs can withstand.

[0043] Furthermore, the first conductive block 101b and the second conductive block 101c are symmetrically connected to the upper and lower sides of the IGBT 101a. Both have flanges T on their four side walls, which facilitate connection with the connection unit 100 and the conductive component 102. The connection hole T-1 on the flange T is used for connection and fixation.

[0044] Insulation between adjacent IGBT units 101 is achieved by setting IGBT insulating pads J.

[0045] The first conductive block 101b and the second conductive block 101c have flanges T around their perimeters, and the flanges T have connecting holes T-1.

[0046] The IGBT valve string unit 100, which is set to N groups, can be infinitely extended through a series structure C or a parallel structure B to accommodate higher voltage and current levels, and has strong compatibility.

[0047] Specifically, in conjunction with the appendix Figure 5 and 6 As shown, in the series structure C, the number of IGBT unit groups N is greater than 1. (When the number of IGBT unit groups is 1, there is no need for the series conductive element 102a, and the connection component 200 can be directly connected to the IGBT unit 101.) The conductive component 102 has N-1 series conductive elements 102a; wherein, each series conductive element 102a sequentially connects the second conductive block 101c of the N-1th group of IGBT unit 101 to the first conductive block 101b of the adjacent Nth group of IGBT unit 101.

[0048] When connecting the series conductive elements 102a, one end of the first series conductive element 102a is connected to the second conductive block 101c of the first group of IGBT units 101, and the other end is connected to the first conductive block 101b of the second group of IGBT units 101; one end of the second series conductive element 102a is connected to the second conductive block 101c of the second group of IGBT units 101, and the other end is connected to the first conductive block 101b of the third group of IGBT units 101; and so on, one end of the (N-1)th series conductive element 102a is connected to the second conductive block 101c of the (N-1)th group of IGBT units 101, and the other end is connected to the first conductive block 101b of the Nth group of IGBT units 101.

[0049] Combined with appendix Figure 7 and 8 As shown, in the parallel structure B, the number of IGBT unit 101 groups N is not less than 2, and the conductive component 102 has 2N-2, which are divided into two groups on average, having a first parallel conductive group 102b and a second parallel conductive group 102c. The two groups have the same structure and number, and the connection positions are symmetrical. That is, the first parallel conductive group 102b is connected from the top to the bottom of the IGBT unit 101, while the second parallel conductive group 102c is connected from the bottom to the top of the IGBT unit 101.

[0050] The first parallel conductive group 102b has N-1 first parallel conductive elements 102b-1, wherein one end of the first first parallel conductive element 102b-1 is connected to the first conductive block 101b of the first group of IGBT units 101, and the other end is connected to the first conductive block 101b of the second group of IGBT units 101; one end of the second first parallel conductive element 102b-1 is connected to the first conductive block 101b of the first group of IGBT units 101, and the other end is connected to the first conductive block 101b of the third group of IGBT units 101; and so on, one end of the N-1th first parallel conductive element 102b-1 is connected to the first conductive block 101b of the first group of IGBT units 101, and the other end is connected to the first conductive block 101b of the Nth group of IGBT units 101.

[0051] The second parallel conductive group 102c has N-1 second parallel conductive elements 102c-1, wherein one end of the first second parallel conductive element 102c-1 is connected to the second conductive block 101c of the Nth group of IGBT units 101, and the other end is connected to the second conductive block 101c of the (N-1)th group of IGBT units 101; one end of the second second parallel conductive element 102c-1 is connected to the second conductive block 101c of the Nth group of IGBT units 101, and the other end is connected to the second conductive block 101c of the (N-2)th group of IGBT units 101; and so on, one end of the (N-1)th second parallel conductive element 102c-1 is connected to the second conductive block 101c of the Nth group of IGBT units 101, and the other end is connected to the second conductive block 101c of the first group of IGBT units 101.

[0052] The remaining structure is the same as that in Example 1.

[0053] Example 3

[0054] Reference Figure 4 and 5 This is the third embodiment of the present invention. The difference between this embodiment and the second embodiment is that one end of the first copper busbar 201 and the second copper busbar 202 are connected to the first conductive block 101b and the second conductive block 101c of the IGBT unit 101 through the connection hole T-1, and the other end is connected to the first diode valve string 301 and the second diode valve string 302, respectively.

[0055] The first copper busbar 201 connects the IGBT unit 101 to the first diode valve string 301, and the second copper busbar 202 connects the IGBT unit 101 to the second diode valve string 302. It should be noted that the connection line between the two copper busbars is not limited to this type.

[0056] Furthermore, the first diode valve string 301 and the second diode valve string 302 have the same structure; wherein, the first diode valve string 301 includes a first diode conductive block 301a and a first rectifier diode 301b and a second rectifier diode 301c located at the upper and lower ends of the diode pad block 301a; the second diode valve string 302 includes a second diode conductive block 302a and a third rectifier diode 302b and a fourth rectifier diode 302c located at the upper and lower ends of the second diode conductive block 302a.

[0057] The end of the first copper busbar 201 away from the first conductive block 101b is connected between the positive terminal of the first diode conductive block 301a and the second rectifier diode 301c; the end of the second copper busbar 202 away from the second conductive block 101b is connected between the negative terminal of the third rectifier diode 302b and the second diode conductive block 302a.

[0058] The input / output copper busbar 303 includes a first input / output copper busbar 303a and a second input / output copper busbar 303b; wherein, the first input / output copper busbar 303a is connected to the negative terminal of the first rectifier diode 301b and the positive terminal of the third rectifier diode 302b; the second input / output copper busbar 303b is connected to the positive terminal of the second rectifier diode 301c and the negative terminal of the fourth rectifier diode 302c.

[0059] Compared to Embodiment 2, furthermore, in the first diode valve string 301, the first rectifier diode 301b and the second rectifier diode 301c are symmetrically arranged at both ends of the first diode conductive block 301a. It should be noted that diode insulating pads K are also provided on both sides of the ends of the first diode valve string 301 and the second diode valve string 302. These diode insulating pads K are located at the ends of the two rectifier diodes furthest from the middle conductive block. Furthermore, one end of the first copper busbar 201 is sandwiched between the first diode conductive block 301a and the positive terminal of the second rectifier diode 301c, and one end of the second copper busbar 202 is sandwiched between the negative terminal of the third rectifier diode 302b and the second diode conductive block 302a.

[0060] The input / output copper busbar 303 connects the first diode valve string 301 and the second diode valve string 302 end to end, forming an H-type rectifier structure. Furthermore, the ends of the input / output copper busbar 303 are extended to serve as leads for this compatible unit. It should also be noted that the first input / output copper busbar 303a is connected to the negative terminal of the first rectifier diode 301b and the positive terminal of the third rectifier diode 302b; the second input / output copper busbar 303b is connected to the positive terminal of the second rectifier diode 301c and the negative terminal of the fourth rectifier diode 302c. The sides of the first and second input / output copper busbars 303a and 303b furthest from the rectifier diodes are in contact with the diode insulating pad K, isolating them from the outside.

[0061] The remaining structure is the same as that in Example 2.

[0062] Furthermore, the current path in the series structure C is as follows: (taking 3 groups of IGBT units 101 as an example; in the case of multiple groups, the current path is the same)

[0063] 1. Current flows in from the first input / output copper busbar 303a, and sequentially passes through the third rectifier diode 302a in the second diode valve string 302, the first copper busbar 201, the first group of IGBT units 101 (the current path inside is the first conductive block 101b, IGBT 101a, and the second conductive block 101c), the first series conductive element 102a, the second group of IGBT units 101, the second series conductive element 102a, the third group of IGBT units 101, the second copper busbar 202, the second rectifier diode 301a in the first diode valve string 301, and then flows out through the second input / output copper busbar 303b;

[0064] 2. Current flows in from the second input / output copper busbar 303b, and sequentially passes through the fourth rectifier diode 302b, the second diode conductive block 302a, the first copper busbar 201, the first IGBT unit 101, the first series conductive component 102a, the second IGBT unit 101, the second series conductive component 102a, the third IGBT unit 101, the second copper busbar 202, the first diode conductive block 301a and the first rectifier diode 301b in the first diode valve string 301, and then flows out through the first input / output copper busbar 303a.

[0065] The current path in parallel structure B is as follows: (taking 3 groups of IGBT units 101 as an example; in the case of multiple groups, the current path is the same)

[0066] 1. Current flows in from the first input / output copper busbar 303a, passes sequentially through the third rectifier diode 302a in the second diode valve string 302 and the first copper busbar 201, and then splits into three parallel paths. The first current path is: the first group of IGBT units 101 and the second parallel conductor 102c-1; the second current path is: the first parallel conductor 102b-1, the second group of IGBT units 101 and the first parallel conductor 102c-1; the third current path is: the second parallel conductor 102b-1 and the third group of IGBT units 101. Then the three paths converge to the second copper busbar 202, pass through the second rectifier diode 301a in the first diode valve string 301, and then flow out through the second input / output copper busbar 303b.

[0067] 2. Current flows in from the second input / output copper busbar 303b, passes sequentially through the fourth rectifier diode 302c, the second diode conductive block 302a, and the first copper busbar 201 in the second diode valve string 302, and then splits into three parallel paths. The first current path is: the first group of IGBT units 101, the second second parallel conductive component 102c-1; the second current path is: the first first parallel conductive component 102b-1, the second group of IGBT units 101, the first second parallel conductive component 102c-1; the third current path is: the second first parallel conductive component 102b-1, the third group of IGBT units 101. Then the three paths converge to the second copper busbar 202, pass through the first diode conductive block 301a and the first rectifier diode 301b in the first diode valve string 301, and then flow out through the first input / output copper busbar 303a.

[0068] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. An IGBT series-parallel compatible unit based on H-bridge rectification, characterized in that: include, IGBT valve string unit (100) includes N groups of IGBT units (101), and the number of N is not less than 1. Each of the IGBT units (101) is connected to each other through conductive components (102) to form a series structure (C) or a parallel structure (B), and adjacent IGBT units (101) are insulated from each other. A connection unit (200) includes a first copper busbar (201) and a second copper busbar (202) respectively connected to the IGBT unit (101); and, A diode valve string unit (300) is connected to the connection unit (200) and includes a first diode valve string (301), a second diode valve string (302), and a copper busbar (303) connecting the first diode valve string (301) and the second diode valve string (302).

2. The IGBT series-parallel compatible unit based on H-bridge rectification according to claim 1, characterized in that: The IGBT unit (101) includes an IGBT (101a) and a first conductive block (101b) and a second conductive block (101c) disposed on the upper and lower sides of the IGBT (101a); Furthermore, the first conductive block (101b) is connected to the emitter of the IGBT (101a), and the second conductive block (101c) is connected to the collector of the IGBT (101a).

3. The IGBT series-parallel compatible unit based on H-bridge rectification according to claim 2, characterized in that: The first conductive block (101b) and the second conductive block (101c) have flanges (T) around their perimeters, and the flanges (T) are provided with connecting holes (T-1).

4. The IGBT series-parallel compatible unit based on H-bridge rectification according to claim 3, characterized in that: One end of the first copper busbar (201) and the second copper busbar (202) are connected to the first conductive block (101b) and the second conductive block (101c) of the IGBT unit (101) through the connection hole (T-1), and the other end is connected to the first diode valve string (301) and the second diode valve string (302), respectively.

5. The IGBT series-parallel compatible unit based on H-bridge rectification according to any one of claims 2 to 4, characterized in that: The first diode valve string (301) and the second diode valve string (302) have the same structure; wherein, The first diode valve string (301) includes a first diode conductive block (301a) and a first rectifier diode (301b) and a second rectifier diode (301c) located at the upper and lower ends of the first diode conductive block (301a); The second diode valve string (302) includes a second diode conductive block (302a) and a third rectifier diode (302b) and a fourth rectifier diode (302c) located at the upper and lower ends of the second diode conductive block (302a).

6. The IGBT series-parallel compatible unit based on H-bridge rectification according to claim 5, characterized in that: The end of the first copper busbar (201) away from the first conductive block (101b) is connected between the first diode conductive block (301a) and the positive terminal of the second rectifier diode (301c); the end of the second copper busbar (202) away from the second conductive block (101c) is connected between the negative terminal of the third rectifier diode (302b) and the second diode conductive block (302a).

7. The IGBT series-parallel compatible unit based on H-bridge rectification according to claim 6, characterized in that: The incoming and outgoing copper busbars (303) include a first incoming and outgoing copper busbar (303a) and a second incoming and outgoing copper busbar (303b); wherein, The first input / output copper busbar (303a) is connected to the negative terminal of the first rectifier diode (301b) and the positive terminal of the third rectifier diode (302b); The second input / output copper busbar (303b) is connected to the positive terminal of the second rectifier diode (301c) and the negative terminal of the fourth rectifier diode (302c).

8. The IGBT series-parallel compatible unit based on H-bridge rectification according to any one of claims 1 to 4, 6 and 7, characterized in that: The adjacent IGBT units (101) are insulated from each other by setting IGBT insulating pads (J), and the ends of the first diode valve string (301) and the second diode valve string (302) are both provided with diode insulating pads (K).

9. The IGBT series-parallel compatible unit based on H-bridge rectification according to any one of claims 1 to 4, 6 and 7, characterized in that: In the series structure (C), the number of N is greater than 1, and the conductive component (102) has N-1 series conductive elements (102a); wherein, Each of the series conductive elements (102a) sequentially connects the second conductive block (101c) of the N-1th group of IGBT units (101) to the first conductive block (101b) of the adjacent Nth group of IGBT units (101).

10. The IGBT series-parallel compatible unit based on H-bridge rectification according to any one of claims 1 to 4, 6 and 7, characterized in that: In the parallel structure (B), the number of N is not less than 2, and the conductive components (102) are 2N-2 in number, evenly divided into two groups, having a first parallel conductive group (102b) and a second parallel conductive group (102c), with the two groups having the same structure and number, and symmetrical connection positions; wherein, The first parallel conductive group (102b) has N-1 first parallel conductive elements (102b-1), wherein, One end of the first parallel conductive element (102b-1) is connected to the first conductive block (101b) of the first group of IGBT units (101), and the other end is connected to the first conductive block (101b) of the second group of IGBT units (101); and so on. One end of the (N-1)th first parallel conductive element (102b-1) is connected to the first conductive block (101b) of the first group of IGBT units (101), and the other end is connected to the first conductive block (101b) of the Nth group of IGBT units (101). The second parallel conductive group (102c) has N-1 second parallel conductive elements (102c-1), wherein, One end of the first second parallel conductive element (102c-1) is connected to the second conductive block (101c) of the Nth group of IGBT units (101), and the other end is connected to the second conductive block (101c) of the (N-1)th group of IGBT units (101); and so on. One end of the (N-1)th second parallel conductive element (102c-1) is connected to the second conductive block (101c) of the Nth group of IGBT units (101), and the other end is connected to the second conductive block (101c) of the first group of IGBT units (101).

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