Magnetoresistive elements, storage elements and electronic devices

Abstract

A magnetoresistive effect element is provided, comprising a first electrode (10), a magnetization fixed layer (120) with a fixed magnetization direction, a first insulating layer (120), a magnetization free layer (140) with a variable magnetization direction, a second insulating layer (150), and a second electrode (160) stacked sequentially. The magnetization fixed layer includes a first magnetic body (121) disposed on the first electrode and a second magnetic body (123) disposed on the first magnetic body through a non-magnetic metal layer (122). At least one of the first magnetic body and the second magnetic body is formed by disposing a magnetic layer (121B, 123C) directly above the non-magnetic layer (121A, 123B), and the non-magnetic layer (123B) or the magnetic layer (121B) has a multilayer structure in which different types of materials are stacked alternately.

Description

Technical Field

[0001] This disclosure relates to magnetoresistive elements, storage elements, and electronic devices. Background Technology

[0002] In recent years, it has become common practice in semiconductor devices to integrate large-capacity non-volatile memory into logic circuits using complementary MOS (CMOS).

[0003] For example, implementations are integrating static random access memory (SRAM) into logic circuits. On the other hand, in order to reduce the cost and power consumption of semiconductor devices, research is underway to replace SRAM with magnetoresistive random access memory (MRAM).

[0004] Magnetoresistive random access memory (MRAM) is a storage element that uses the magnetoresistive effect, in which an insulating film is sandwiched between a pair of ferromagnetic layers. In the magnetoresistive effect, the tunneling resistance varies depending on the relative magnetization directions of the pair of ferromagnetic layers. As a result, MRAM can store information by controlling the magnetization of the ferromagnetic layers of the magnetoresistive effect to make them parallel or antiparallel and thus controlling the magnitude of the tunneling resistance.

[0005] Here, in a vertically magnetized magnetoresistive element with magnetic anisotropy in a direction perpendicular to the film surface, various stacked structures are being studied to enhance the vertical magnetic anisotropy of the ferromagnetic layer.

[0006] For example, Patent Document 1 discloses a vertically magnetized magnetoresistive element with magnetic anisotropy in a direction perpendicular to the film surface, wherein a lower layer containing Pd (palladium) is disposed below a recording layer with variable magnetization direction, wherein the concentration of Pd (palladium) is equal to or less than a certain concentration. Patent Document 1 discloses that alloying Co (cobalt), a ferromagnetic metal contained in the storage layer, with Pd can achieve a high MR ratio.

[0007] Citation List

[0008] Patent documents

[0009] Patent document 1 JP 5148673 B Summary of the Invention

[0010] Technical issues

[0011] However, the crystal orientation of the ferromagnetic layer has not been sufficiently studied in Patent Document 1. When the crystal orientation of the ferromagnetic layer is low, it becomes difficult to further enhance the perpendicular magnetic anisotropy of the ferromagnetic layer. Therefore, it is possible to achieve a magnetoresistive effect device with higher perpendicular magnetic anisotropy in the ferromagnetic layer by focusing on the crystal orientation of the ferromagnetic layer.

[0012] Solution to the problem

[0013] According to this disclosure, a magnetoresistive effect element is provided, comprising: a first electrode; a magnetization fixed layer disposed on the first electrode and having a fixed magnetization direction; a first insulating layer disposed on the magnetization fixed layer; a magnetization free layer disposed on the first insulating layer and having a variable magnetization direction; a second insulating layer disposed on the magnetization free layer; and a second electrode disposed on the second insulating layer, wherein the magnetization fixed layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body separated by a non-magnetic metal layer, at least one of the first magnetic body and the second magnetic body is formed by disposing a magnetic layer directly above the non-magnetic layer, and the non-magnetic layer or the magnetic layer is formed as a multilayer structure in which different materials are alternately stacked.

[0014] Furthermore, according to this disclosure, a storage element is provided, comprising: a first electrode; a magnetization fixed layer disposed on the first electrode and having a fixed magnetization direction; a first insulating layer disposed on the magnetization fixed layer; a magnetization free layer disposed on the first insulating layer and having a variable magnetization direction; a second insulating layer disposed on the magnetization free layer; and a second electrode disposed on the second insulating layer, wherein the magnetization fixed layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body separated by a non-magnetic metal layer, at least one of the first magnetic body and the second magnetic body is formed by disposing a magnetic layer directly above the non-magnetic layer, and the non-magnetic layer or the magnetic layer is formed as a multilayer structure in which different materials are alternately stacked.

[0015] Furthermore, according to this disclosure, an electronic device including a magnetoresistive element is provided. The magnetoresistive element includes: a first electrode; a magnetization fixed layer disposed on the first electrode and having a fixed magnetization direction; a first insulating layer disposed on the magnetization fixed layer; a magnetization free layer disposed on the first insulating layer and having a variable magnetization direction; a second insulating layer disposed on the magnetization free layer; and a second electrode disposed on the second insulating layer. The magnetization fixed layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body separated by a non-magnetic metal layer. At least one of the first magnetic body and the second magnetic body is formed by disposing a magnetic layer directly above the non-magnetic layer, and the non-magnetic layer or the magnetic layer is formed as a multilayer structure in which different materials are alternately stacked. Attached Figure Description

[0016] Figure 1 This is a schematic vertical cross-sectional view showing the stacked structure of a magnetoresistive effect element according to a first embodiment of the present disclosure.

[0017] Figure 2This is a schematic vertical cross-sectional view showing the specific construction of a magnetoresistive effect element according to the same embodiment.

[0018] Figure 3 This is a schematic vertical cross-sectional view showing a stacked structure of a magnetoresistive effect element according to an example of the same embodiment.

[0019] Figure 4A This is a graph illustrating an example of how the change in the exchange coupling magnetic field Hex occurs when the thickness of the first nonmagnetic layer formed of Mo is varied in a magnetoresistive element according to the same example.

[0020] Figure 4B This is a graph illustrating an example of how the change in the exchange coupling magnetic field Hex occurs when the thickness of the first nonmagnetic layer formed by W is varied in a magnetoresistive element according to the same example.

[0021] Figure 4C This is a graph illustrating an example of how the change in the exchange coupling magnetic field Hex occurs when the thickness of the first nonmagnetic layer formed by Ir is varied in a magnetoresistive element according to the same example.

[0022] Figure 5 This is a schematic vertical cross-sectional view showing the specific construction of a magnetoresistive effect element according to a second embodiment of the present disclosure.

[0023] Figure 6 This is a schematic vertical cross-sectional view showing a stacked structure of a magnetoresistive effect element according to an example of the same embodiment.

[0024] Figure 7A This is a graph illustrating an example of how the ratio of the CoFeB film thickness to the Mo film thickness is set to 1:1 in the second nonmagnetic layer of a magnetoresistive element according to the same example, and how the film thickness of the layer formed by CoFeB is varied, changes the exchange coupling magnetic field Hex and MR ratio.

[0025] Figure 7B The implementation was plotted for each CoFeB film thickness. Figure 7A The graph shows the ratio of the good exchange-coupled magnetic field Hex and the MR ratio to the film thickness of Mo versus CoFeB.

[0026] Figure 7C It plots the results for each CoFeB film thickness using conversion. Figure 7B Result Implementation Figure 7A The graph shows the film thickness of Mo with good exchange-coupled magnetic field and MR ratio.

[0027] Figure 7D It shows that Figure 7C The graph plotted shows the combined thickness of Mo and CoFeB films converted to at% of the entire second nonmagnetic layer.

[0028] Figure 8 This is a schematic vertical cross-sectional view showing the specific construction of a magnetoresistive effect element according to a third embodiment of the present disclosure.

[0029] Figure 9 This is a schematic vertical cross-sectional view showing a stacked structure of a magnetoresistive effect element according to an example of the same embodiment.

[0030] Figure 10A This is an external view of an example electronic device according to an embodiment of the present disclosure.

[0031] Figure 10B This is a frontal view of another example of an electronic device according to an embodiment of the present disclosure.

[0032] Figure 10C This is an external view of another example of an electronic device according to an embodiment of the present disclosure, viewed from the rear. Detailed Implementation

[0033] Preferred embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. Furthermore, components having substantially the same functional configuration will be denoted by the same reference numerals in this specification and the drawings, and therefore, repeated descriptions thereof will be omitted.

[0034] In each figure mentioned in the following description, the dimensions of some constituent components may be enlarged for ease of description. Therefore, the relative dimensions of the constituent components shown in the figures do not necessarily accurately represent the actual size relationship between the constituent components. Furthermore, in the following description, the stacking direction of the substrate and layers is indicated as the vertical direction, and the direction in which layers are stacked on the substrate, etc., is indicated as the upward direction.

[0035] In addition, the descriptions will be given in the following order.

[0036] 1. First Embodiment

[0037] 1.1. Construction Example

[0038] 1.2. Example

[0039] 2. Second Embodiment

[0040] 2.1. Construction Example

[0041] 2.2. Example

[0042] 3. Third embodiment

[0043] 3.1. Construction Example

[0044] 3.2. Example

[0045] 4. Application Examples

[0046] <1. First Embodiment>

[0047] (1.1. Construction Example)

[0048] First, refer to Figure 1 The schematic construction of a magnetoresistive element according to a first embodiment of the present disclosure will be described. Figure 1 This is a schematic vertical cross-sectional view showing the stacked structure of the magnetoresistive effect element 1 according to this embodiment.

[0049] like Figure 1 As shown, the magnetoresistive effect element 1 includes a substrate 100, a first electrode 110, a magnetization fixing layer 120, a first insulating layer 130, a magnetization free layer 140, a second insulating layer 150, and a second electrode 160. Furthermore, the magnetization fixing layer 120 is composed of a non-magnetic metal layer 122 and a first magnetic body 121 and a second magnetic body 123 sandwiched between the non-magnetic metal layer 122 in the stacking direction.

[0050] According to this embodiment, the magnetoresistive effect element 1 is, for example, a so-called spin-transmitted torque-magnetoresistive random access memory (STT-MRAM), wherein the magnetization direction of the magnetized free layer 140 is controlled by the spin torque of electrons by passing a current between the first electrode 110 and the second electrode 160.

[0051] The substrate 100 is a component supporting the layers of the magnetoresistive element 1. The substrate 100 can be formed of any material, such as semiconductor, quartz, glass, or organic resin. For example, the substrate 100 can be formed of a semiconductor such as silicon (Si) or germanium (Ge) or a compound semiconductor such as gallium arsenide (GaAs), gallium nitride (GaN), or silicon carbide (SiC). Alternatively, the substrate 100 can be a silicon-on-insulator (SOI) substrate, wherein an insulating film such as SiO2 is sandwiched within the silicon substrate.

[0052] The first electrode 110 is disposed on the substrate 100 using various metal or alloy materials, and thus the first electrode 110 serves as a connection point between the magnetoresistive effect element 1 and various wirings. The first electrode 110 can be formed of known materials and can be a laminated structure, for example, it can be formed of a single layer film or a laminate of multiple films.

[0053] The magnetization fixing layer 120 is disposed on the first electrode 110 in a stacked ferromagnetic structure, wherein, for example, a first magnetic body 121, a non-magnetic metal layer 122 and a second magnetic body 123 are stacked.

[0054] The first magnetic body 121 and the second magnetic body 123 are a stacked structure. Both the first magnetic body 121 and the second magnetic body 123 have an easy magnetization axis in a direction perpendicular to the film surface and include at least one layer formed of ferromagnetic material. The first magnetic body 121 and the second magnetic body 123 can have their magnetization directions fixed due to magnetic coupling through the non-magnetic metal layer 122. As a result, when current flows between the first electrode 110 and the second electrode 160, the magnetoresistive effect element 1 can change only the magnetization direction of the magnetized free layer 140 without changing the magnetization directions of the first magnetic body 121 and the second magnetic body 123.

[0055] For example, when the magnetoresistive element 1 is used as an MRAM, the second magnetic body 123 is used as a reference layer, which serves as a reference for the magnetization direction of the magnetized free layer 140, and the first magnetic body 121 is used as a fixing layer to fix the magnetization direction of the second magnetic body 123 due to magnetic coupling.

[0056] In the technology according to this disclosure, at least one of the first magnetic body 121 and the second magnetic body 123 is constituted by providing a magnetic layer directly above the non-magnetic layer, and the non-magnetic layer or the magnetic layer is constructed as a multilayer structure in which different materials are alternately stacked. Accordingly, in the magnetoresistive effect element 1, the crystal orientation of the magnetic layer caused by the non-magnetic layer can be improved, and the perpendicular magnetic anisotropy of the magnetic layer can be enhanced. Therefore, in the magnetoresistive effect element 1, the magnetic coupling force between the first magnetic body 121 and the second magnetic body 123 can be increased. Furthermore, since the magnetic properties of the magnetized fixed layer 120 are improved, when the magnetoresistive effect element 1 is used as an MRAM, the magnetoresistive effect element 1 can improve the magnetoresistive change rate (magnetoresistive (MR) ratio).

[0057] Here, in the magnetoresistive effect element 1 according to the first embodiment, the first magnetic body 121 is formed by providing a magnetic layer directly above the non-magnetic layer. (Refer to...) Figure 2 The specific structure of the first magnetic body 121 in the first embodiment is described. Figure 2 This is a schematic vertical cross-sectional view showing the specific construction of the magnetoresistive effect element 1 according to the first embodiment.

[0058] like Figure 2 As shown, in the first embodiment, the first magnetic body 121 is constructed by providing a first magnetic layer 121B, in which different metal materials are alternately stacked, directly above a first non-magnetic layer 121A formed of a non-magnetic metal material. Furthermore, a first magnetic metal layer 121C formed of a magnetic metal material may be further provided on the first magnetic layer 121B.

[0059] A first nonmagnetic layer 121A is formed on the first electrode 110 using a nonmagnetic metallic material containing any of molybdenum (Mo), tungsten (W), and iridium (Ir). Since the first nonmagnetic layer 121A can eliminate the mismatch in crystal orientation between the first electrode 110 and the first magnetic layer 121B, the crystal orientation and perpendicular magnetic anisotropy of the first magnetic layer 121B can be enhanced. Accordingly, since the magnetic coupling force between the first magnetic body 121 and the second magnetic body 123 is increased, changes in the magnetization direction of the second magnetic body 123 (i.e., erroneous writing) can be further suppressed. Therefore, when the magnetoresistive element 1 is used as an MRAM, the error rate can be reduced.

[0060] A first magnetic layer 121B is formed directly above the first non-magnetic layer 121A by alternately stacking different types of metal materials. The first magnetic layer 121B can be formed, for example, by repeatedly stacking cobalt (Co) and platinum (Pt). When the first magnetic layer 121B is formed as a stacked film of cobalt (Co) and platinum (Pt), the first magnetic layer 121B is formed with a crystal orientation having the (111) plane of fcc. However, the crystal orientation of the metal material (e.g., tantalum (Ta), ruthenium (Ru), etc.) constituting the first electrode 110 disposed below the first magnetic body 121 can be different from the (111) plane of fcc. In the magnetoresistive effect element 1 according to the first embodiment, by providing the first non-magnetic layer 121A between the first electrode 110 and the first magnetic layer 121B, the mismatch in crystal orientation between these layers can be eliminated.

[0061] A first magnetic metal layer 121C can be formed on the first magnetic layer 121B using a magnetic metal material. The first magnetic metal layer 121C can be formed from, for example, a magnetic metal material containing cobalt (Co). The first magnetic metal layer 121C can be configured to control the magnetic properties of the first magnetic body 121, making it more suitable for the magnetoresistive effect element 1.

[0062] A non-magnetic metal layer 122 is disposed on the first magnetic body 121 and between the first magnetic body 121 and the second magnetic body 123, thereby magnetically coupling the first magnetic body 121 and the second magnetic body 123. The non-magnetic metal layer 122 may be formed of a non-magnetic metal material such as iridium (Ir), molybdenum (Mo), tungsten (W), niobium (Nb), hafnium (Hf) or titanium (Ti), as a thin film layer with a thickness of about 1 nm.

[0063] A second magnetic body 123 is disposed on a non-magnetic metal layer 122 using a magnetic metallic material. The second magnetic body 123 may be formed of, for example, a magnetic metallic material containing cobalt (Co) or a magnetic material containing a 3d transition metal and boron (B). The second magnetic body 123 may be formed as a single layer or as a stack of multiple layers. For example, the second magnetic body 123 may be formed by sequentially stacking Co, Mo, and CoFeB.

[0064] A first insulating layer 130 is formed on the magnetized fixed layer 120 using an insulating material. The first insulating layer 130 is disposed between the magnetized fixed layer 120 and the magnetized free layer 140 to serve as a tunnel insulating film for a magnetic tunnel junction (MTJ) element.

[0065] The first insulating layer 130 can be formed as a thin film layer with a thickness of about 1 nm using, for example, an inorganic oxide such as magnesium oxide (MgO) or aluminum oxide (Al2O3). More specifically, the first insulating layer 130 can be formed of magnesium oxide (MgO) with a thickness of about 1 nm. When the first insulating layer 130 is formed of magnesium oxide (MgO), the first insulating layer 130 becomes a layer with good crystallinity at a lower temperature, thus further enhancing the tunnel magnetoresistance (TMR) effect between the magnetized fixed layer 120 and the magnetized free layer 140.

[0066] A magnetization free layer 140 is formed on the first insulating layer 130 using a magnetic material. The magnetization free layer 140 is a magnetic layer with an easy magnetization axis in a direction perpendicular to the film surface due to the interfacial magnetic anisotropy generated at the interface with the first insulating layer 130, and its magnetization direction can be controlled. Specifically, the magnetization free layer 140 can be formed of a magnetic material comprising a 3d transition metal and boron (B). More specifically, the magnetization free layer 140 can be formed of CoFeB having a film thickness of about 1 nm to 2 nm. Accordingly, the magnetization free layer 140 can further enhance the perpendicular magnetic anisotropy. Furthermore, the magnetization free layer 140 can be formed in a stacked structure of CoFeB and non-magnetic metallic materials, such as iridium (Ir), molybdenum (Mo), tungsten (W), niobium (Nb), hafnium (Hf), or titanium (Ti).

[0067] In this embodiment, an MTJ element is constructed by sandwiching a first insulating layer 130 between a magnetized fixed layer 120 and a magnetized free layer 140, which are ferromagnetic materials. In the MTJ element, a voltage is applied perpendicularly to the junction surface between the magnetized fixed layer 120, the magnetized free layer 140, and the first insulating layer 130, thereby causing current to flow through the first insulating layer 130 due to the TMR effect. The magnitude of the TMR effect depends on whether the magnetization directions of the magnetized fixed layer 120 and the magnetized free layer 140 are parallel or antiparallel. Therefore, the magnetoresistive effect element 1 can control the resistance value between the first electrode 110 and the second electrode 160 by controlling the magnetization direction of the magnetized free layer 140.

[0068] A second insulating layer 150 is formed on the magnetized free layer 140 using an insulating material. The second insulating layer 150 can be formed as a thin film layer with a thickness of about 1 nm using an inorganic oxide such as magnesium oxide (MgO) or aluminum oxide (Al2O3). More specifically, the second insulating layer 150 can be formed of magnesium oxide (MgO) with a thickness of about 1 nm. Because the second insulating layer 150 can control the easy magnetization axis of the magnetized free layer 140 in the direction perpendicular to the film surface caused by the perpendicular magnetic anisotropy of the interface, the perpendicular magnetic anisotropy of the magnetized free layer 140 can be further enhanced.

[0069] A second electrode 160 is disposed on the second insulating layer 150 using various metal or alloy materials to serve as a connection point between the magnetoresistive effect element 1 and various wirings. The second electrode 160 can be formed of known materials and can be a laminated structure, for example, it can be formed of a single layer film or a laminate of multiple films.

[0070] In addition, the magnetoresistive effect element 1 described above can be manufactured using known film-forming methods such as sputtering.

[0071] (1.2. Example)

[0072] Next, we will refer to Figure 3 An example of a magnetoresistive element 1 according to a first embodiment of the present disclosure is described. Figure 3 This is a schematic vertical cross-sectional view showing the stacked structure of the magnetoresistive effect element 10 according to the example. Additionally, in Figure 3 In this context, the symbol "A / B" indicates that the layer formed by A is placed on the layer formed by B.

[0073] like Figure 3As shown, a magnetoresistive element 10 according to this example can be formed by sequentially stacking a first electrode 110, a first non-magnetic layer 121A, a first magnetic layer 121B, a first magnetic metal layer 121C, a non-magnetic metal layer 122, a second magnetic material 123, a first insulating layer 130, a magnetized free layer 140, a second insulating layer 150, and a second electrode 160 on a substrate 100 formed of silicon (Si). In the first electrode 110, Pt and Ru are sequentially stacked from the substrate 100 side. 21A is formed of Mo, Co and Pt are repeatedly stacked three times in the first magnetic layer 121B, the first magnetic metal layer 121C is formed of Co, the non-magnetic metal layer 122 is formed of Ir, Co and Pt are repeatedly stacked three times in the second magnetic body 123, and then Co, Mo and CoFeB are stacked in sequence, the first insulating layer 130 is formed of MgO, CoFeB and Mo are stacked in sequence in the magnetized free layer 140, the second insulating layer 150 is formed of MgO, and the second electrode 160 is formed of Ta or Ru.

[0074] In the magnetoresistive element 10 according to the example, the first nonmagnetic layer 121A can be formed of any material of Mo, W, and Ir. Here, Figures 4A to 4C An example is shown of how the exchange coupling magnetic field Hex of the first magnetic body 121 and the second magnetic body 123 changes when the film thickness of the first nonmagnetic layer 121A formed by each of Mo, W and Ir is changed.

[0075] Figure 4A This is a graph illustrating an example of how the change in the exchange-coupled magnetic field Hex occurs when the thickness of the first non-magnetic layer 121A formed of Mo is varied. Figure 4B This is a graph illustrating an example of how the change in the exchange-coupled magnetic field Hex changes with varying film thickness of the first nonmagnetic layer 121A formed by W. Figure 4C This is a graph illustrating an example of how the change in the exchange-coupled magnetic field Hex occurs when the thickness of the first non-magnetic layer 121A formed by Ir is varied. Figures 4A to 4C In the graph shown, the thickness of the first non-magnetic layer 121A is taken as the horizontal axis, and the exchange coupling magnetic field between the first magnetic body 121 and the second magnetic body 123 is taken as the vertical axis.

[0076] refer to Figures 4A to 4C It can be seen that even when the first nonmagnetic layer 121A is formed of any of the materials Mo, W, and Ir, the exchange coupling magnetic field is above 5000 Oe (397885 A / m) when the film thickness of the first nonmagnetic layer 121A is in the range of 0.4 nm or more and 2.2 nm or less. Therefore, it can be seen that when the film thickness of the first nonmagnetic layer 121A is within the above range, the magnetoresistive element 10 can achieve good magnetic coupling.

[0077] Furthermore, it can be seen that even when the first nonmagnetic layer 121A is formed of any of the materials Mo, W, and Ir, the exchange coupling magnetic field becomes even higher in the range of a film thickness of 0.6 nm or more and 2.0 nm or less. Therefore, it can be seen that within this range of film thickness of the first nonmagnetic layer 121A, the magnetoresistive element 10 can achieve better magnetic coupling force.

[0078] In addition, refer to Figures 4A to 4C It can be seen that when the first non-magnetic layer 121A is formed of Ir, the magnetoresistive effect element 10 can achieve a higher exchange coupling magnetic field compared to when the first non-magnetic layer 121A is formed of Mo or W. Therefore, it can be seen that when the first non-magnetic layer 121A is formed of Ir, the magnetoresistive effect element 10 can achieve better magnetic coupling force.

[0079] <2. Second Embodiment>

[0080] (2.1. Construction Example)

[0081] Next, refer to Figure 5 The specific construction of the magnetoresistive effect element according to the second embodiment of the present disclosure will be described. Figure 5 This is a schematic vertical cross-sectional view showing the specific structure of the magnetoresistive effect element 2 according to this embodiment.

[0082] like Figure 5 As shown, the magnetoresistive effect element 2 includes a substrate 100, a first electrode 110, a magnetization fixing layer 120, a first insulating layer 130, a magnetization free layer 140, a second insulating layer 150, and a second electrode 160. Furthermore, the magnetization fixing layer 120 is composed of a non-magnetic metal layer 122 and a first magnetic body 121 and a second magnetic body 123 sandwiched between the non-magnetic metal layer 122 in the stacking direction.

[0083] Furthermore, the magnetoresistive effect element 1 according to the first embodiment and the magnetoresistive effect element 2 according to the second embodiment have essentially the same structure except for the first magnetic body 121 and the second magnetic body 123, so their description will be omitted here.

[0084] A first magnetic body 121 is disposed on the first electrode 110 using a magnetic metallic material. The first magnetic body 121 may be formed of, for example, a magnetic metallic material containing cobalt (Co) or a magnetic material containing a 3d transition metal and boron (B). The first magnetic body 121 may be formed as a single layer film or as a stacked film of multiple films. For example, the first magnetic body 121 may be formed by repeatedly stacking Co and Pt three times and then stacking Co.

[0085] In the magnetoresistive effect element 2 according to the second embodiment, a second magnetic body 123 is formed by providing a magnetic layer directly above the non-magnetic layer. Specifically, as shown... Figure 5 As shown, a second magnetic body 123 is constructed by placing a second magnetic layer 123C, made of a magnetic material containing a 3d transition metal and boron (B), directly above a second non-magnetic layer 123B in which magnetic materials containing a 3d transition metal and boron (B) are alternately stacked. Furthermore, a second magnetic metal layer 123A, made of a magnetic metal material, may be further disposed below the second non-magnetic layer 123B.

[0086] A second magnetic metal layer 123A can be formed on the non-magnetic metal layer 122 using a magnetic metal material. For example, the second magnetic metal layer 123A can be formed from a magnetic metal material containing cobalt (Co). The second magnetic metal layer 123A can be provided to control the magnetic properties of the first magnetic body 121 to better suit the magnetoresistive effect element 2.

[0087] A second non-magnetic layer 123B is formed on a second magnetic metal layer 123A by alternately layering magnetic materials containing 3d transition metals and boron (B) and non-magnetic metal materials. For example, the second non-magnetic layer 123B can be formed by repeatedly layering magnetic materials containing CoFeB and non-magnetic metal materials containing any of molybdenum (Mo), tungsten (W), and iridium (Ir).

[0088] Although the second nonmagnetic layer 123B comprises a layered structure formed of magnetic material, it is generally amorphous and nonmagnetic. By including a layer of magnetic material common to the second magnetic layer 123C in the stacked structure, the second nonmagnetic layer 123B can improve the crystal orientation of the second magnetic layer 123C. Accordingly, since the second nonmagnetic layer 123B can increase the perpendicular magnetic anisotropy of the second magnetic layer 123C, the MR ratio of the magnetoresistive element 2 can be further increased.

[0089] Here, the second nonmagnetic layer 123B can be arranged in a stacked structure, wherein at least one of the uppermost and lowermost layers is a layer formed of a nonmagnetic metallic material. Since the second nonmagnetic layer 123B is disposed on the second magnetic metallic layer 123A and below the second magnetic layer 123C, it is sandwiched between layers formed of magnetic material on both sides in the stacking direction. Therefore, in the second nonmagnetic layer 123B, at least one of the uppermost and lowermost layers of the stacked structure is formed as a layer formed of a nonmagnetic metallic material, thereby forming a repeating structure of magnetic and nonmagnetic layers (i.e., a stacked ferromagnetic structure) between the second magnetic metallic layer 123A and the second magnetic layer 123C. Accordingly, the second nonmagnetic layer 123B can further increase the MR ratio of the magnetoresistive effect element 2. Furthermore, in the second nonmagnetic layer 123B, both the uppermost and lowermost layers of the stacked structure can be formed of nonmagnetic metallic materials.

[0090] The second magnetic layer 123C is formed of a magnetic material comprising a 3d transition metal and boron (B), and is formed directly above the second non-magnetic layer 123B. For example, the second magnetic layer 123C can be formed of CoFeB having a film thickness of about 1 nm to 2 nm. Since the crystal orientation of the second magnetic layer 123C can be improved by the second non-magnetic layer 123B directly below the second magnetic layer 123C, the MR ratio of the magnetoresistive element 2 can be further increased.

[0091] In addition, the aforementioned magnetoresistive element 2 can be manufactured using known film-forming methods such as sputtering.

[0092] (2.2. Example)

[0093] Subsequently, reference Figure 6 An example of the magnetoresistive effect element 2 according to a second embodiment of the present disclosure will be described. Figure 6 This is a schematic vertical cross-sectional view showing the stacked structure of the magnetoresistive effect element 20 according to the example. Additionally, in Figure 6 In this context, the symbol "A / B" indicates that the layer formed by A is placed on the layer formed by B.

[0094] like Figure 6As shown, a magnetoresistive element 20 according to this example can be formed by sequentially stacking a first electrode 110, a first magnetic body 121, a non-magnetic metal layer 122, a second magnetic metal layer 123A, a second non-magnetic layer 123B, a second magnetic layer 123C, a first insulating layer 130, a magnetized free layer 140, a second insulating layer 150, and a second electrode 160 on a substrate 100 formed of silicon (Si). Pt and Ru are sequentially stacked in the first electrode 110 from the substrate 100 side, and Pt and Ru are stacked in the first magnetic body 121... The first layer is formed by stacking Co and Pt three times, followed by stacking Co. The second layer is formed by stacking Ir. The second layer is formed by stacking Co and Pt three times, followed by stacking Co. The second layer is formed by stacking Mo and CoFeB alternately in the second non-magnetic layer 123B. The second magnetic layer 123C is formed by stacking CoFeB. The first insulating layer 130 is formed by stacking MgO. The second layer is formed by stacking CoFeB and Mo in sequence in the magnetized free layer 140. The second insulating layer 150 is formed by stacking MgO. The second electrode 160 is formed by stacking Ta or Ru.

[0095] In the magnetoresistive element 20 according to the example, the second nonmagnetic layer 123B can be formed as a stacked structure of a magnetic material containing CoFeB and a nonmagnetic metallic material containing any of Mo, W, and Ir. Here, Figure 7A An example is shown of how the exchange coupling magnetic field Hex and MR ratio of the first magnetic body 121 and the second magnetic body 123 are changed when the film thickness of the layer formed by the non-magnetic metallic material containing CoFeB is varied.

[0096] Figure 7A This is a graph illustrating an example of how the ratio of the exchange coupling magnetic field Hex to the MR ratio changes when the ratio of the CoFeB film thickness to the Mo film thickness is set to 1:1 and the film thickness of the CoFeB-formed layer in the second nonmagnetic layer 123B is varied.

[0097] refer to Figure 7A It can be seen that when the CoFeB layer is too thin, the MR ratio decreases, and when the CoFeB layer is too thick, the exchange coupling magnetic field Hex decreases. Specifically, it can be seen that when the CoFeB layer thickness is 0.07 nm or more and 0.15 nm or less, the exchange coupling magnetic field Hex is 5000 Oe (397885 A / m) or more, and the MR ratio is 150% or more. Therefore, it can be seen that when the CoFeB layer thickness is within the above range, the magnetoresistive element 20 can achieve good characteristics.

[0098] In addition, according to Figure 7AThe results shown indicate that a suitable range between the film thickness of the Mo-formed layer and the film thickness of the CoFeB-formed layer was calculated. Figure 7B and Figure 7C middle. Figure 7B The graphs showing the Mo / CoFeB film thickness ratios for achieving the aforementioned good exchange-coupled magnetic field Hex and MR ratios for various CoFeB film thicknesses were plotted. Furthermore, Figure 7C Through conversion Figure 7B The results were plotted for each CoFeB film thickness, and curves were obtained for the Mo film thickness that achieved the above-mentioned good exchange coupling magnetic field and MR ratio.

[0099] exist Figure 7B and Figure 7C In the figure, the range enclosed by the upper and lower limits shows the combination of Mo and CoFeB film thicknesses that achieve the aforementioned good exchange-coupled magnetic field Hex and MR ratio. Furthermore, Figure 7D This illustrates the case where the second nonmagnetic layer 123B has a stacked structure of Mo, CoFeB, Mo, CoFeB, and Mo, and... Figure 7C The combined film thicknesses of Mo and CoFeB plotted in the figure are converted into at% of the total thickness of the second nonmagnetic layer 123B.

[0100] according to Figure 7D It can be seen that the atomic ratio of CoFeB (magnetic material) and Mo (non-magnetic metal material) in the entire second non-magnetic layer 123B is in the range of CoFeB:Mo = 24.1 at%: 75.9 at% to 51.7 at%: 48.3 at% and the magnetoresistive effect element 20 can achieve the above-mentioned good exchange coupling magnetic field Hex and MR ratio.

[0101] <3. Third Embodiment>

[0102] (3.1. Construction Example)

[0103] Next, refer to Figure 8 The specific construction of the magnetoresistive effect element according to the third embodiment of the present disclosure will be described. Figure 8 This is a schematic vertical cross-sectional view showing the specific structure of the magnetoresistive element 3 according to this embodiment. Additionally, in Figure 8 In this context, the symbol "A / B" indicates that the layer formed by A is placed on the layer formed by B.

[0104] like Figure 8As shown, the magnetoresistive effect element 3 includes a substrate 100, a first electrode 110, a magnetization fixing layer 120, a first insulating layer 130, a magnetization free layer 140, a second insulating layer 150, and a second electrode 160. Furthermore, the magnetization fixing layer 120 is composed of a non-magnetic metal layer 122 and a first magnetic body 121 and a second magnetic body 123 sandwiched between the non-magnetic metal layer 122 in the stacking direction.

[0105] In the magnetoresistive element 3 according to the third embodiment, a first magnetic body 121 is formed by providing a magnetic layer directly above the non-magnetic layer, and a second magnetic body 123 is formed by providing a magnetic layer directly above the non-magnetic layer. That is, the magnetoresistive element 3 according to the third embodiment corresponds to a combination of the magnetoresistive element 1 according to the first embodiment and the magnetoresistive element 2 according to the second embodiment.

[0106] Furthermore, since the construction of the magnetoresistive effect element according to the first or second embodiment is substantially the same as that of the magnetoresistive effect element 3 according to the third embodiment, except for the first magnetic body 121 and the second magnetic body 123, their descriptions will be omitted here.

[0107] Specifically, such as Figure 8 As shown, a first magnetic body 121 is constructed by placing a first magnetic layer 121B, in which different metallic materials are alternately stacked, directly above a first non-magnetic layer 121A formed of a non-magnetic metallic material. Furthermore, a second magnetic body 123 is constructed by placing a second magnetic layer 123C, formed of a magnetic material containing a 3d transition metal and boron (B), directly above a second non-magnetic layer 123B, in which magnetic materials containing 3d transition metals and boron (B) and non-magnetic metallic materials are alternately stacked. Additionally, the first magnetic metallic layer 121C and the second magnetic metallic layer 123A, formed of magnetic metallic materials, may be further disposed on the first magnetic layer 121B and below the second non-magnetic layer 123B, respectively.

[0108] For example, a first non-magnetic layer 121A is formed on the first electrode 110 using a non-magnetic metallic material containing any of molybdenum (Mo), tungsten (W), and iridium (Ir). Since the first non-magnetic layer 121A can eliminate the mismatch in crystal orientation between the first electrode 110 and the first magnetic layer 121B, the crystal orientation and perpendicular magnetic anisotropy of the first magnetic layer 121B can be enhanced.

[0109] A first magnetic layer 121B is formed directly above the first non-magnetic layer 121A by alternately stacking different types of metallic materials. The first magnetic layer 121B can be formed, for example, by repeatedly stacking cobalt (Co) and platinum (Pt).

[0110] A first magnetic metal layer 121C can be formed on the first magnetic layer 121B using a magnetic metal material. The first magnetic metal layer 121C can be formed from, for example, a magnetic metal material containing cobalt (Co).

[0111] A second magnetic metal layer 123A can be formed on the non-magnetic metal layer 122 using a magnetic metal material. For example, the second magnetic metal layer 123A can be formed from a magnetic metal material containing cobalt (Co).

[0112] A second non-magnetic layer 123B is formed on a second magnetic metal layer 123A by alternately stacking magnetic materials containing 3d transition metals and boron (B) and non-magnetic metal materials. The second non-magnetic layer 123B can be formed, for example, by alternately stacking multiple layers of magnetic materials containing CoFeB and non-magnetic metal materials containing any of molybdenum (Mo), tungsten (W), and iridium (Ir). Although the second non-magnetic layer 123B includes layers formed of magnetic materials in the stacked structure, the second non-magnetic layer 123B is generally amorphous and non-magnetic. The crystal orientation of the second magnetic layer 123C can be improved by including layers formed of magnetic materials common to the second magnetic layer 123C in the stacked structure.

[0113] The second magnetic layer 123C is formed of a magnetic material comprising a 3d transition metal and boron (B), and is formed directly above the second non-magnetic layer 123B. For example, the second magnetic layer 123C can be formed of CoFeB having a film thickness of about 1 nm to 2 nm. Since the crystal orientation of the second magnetic layer 123C can be improved by the second non-magnetic layer 123B directly below the second magnetic layer 123C, the MR ratio of the magnetoresistive element 2 can be further increased.

[0114] According to the third embodiment, the exchange coupling magnetic field Hex and MR ratio of the first magnetic body 121 and the second magnetic body 123 of the magnetoresistive element 3 can be further improved relative to the magnetoresistive effect elements 1 and 2 according to the first and second embodiments.

[0115] In addition, the aforementioned magnetoresistive element 3 can be manufactured using known film-forming methods such as sputtering.

[0116] (3.2. Example)

[0117] Then, refer to Figure 9 An example of a magnetoresistive element 3 according to a third embodiment of the present disclosure is described. Figure 9 This is a schematic vertical cross-sectional view showing the stacked structure of the magnetoresistive effect element 30 according to the example. Additionally, in Figure 9 In this context, the symbol "A / B" indicates that the layer formed by A is placed on the layer formed by B.

[0118] like Figure 9 As shown, a magnetoresistive element 30 according to this example can be formed by sequentially stacking a first electrode 110, a first non-magnetic layer 121A, a first magnetic layer 121B, a first magnetic metal layer 121C, a non-magnetic metal layer 122, a second magnetic metal layer 123A, a second non-magnetic layer 123B, a second magnetic layer 123C, a first insulating layer 130, a magnetized free layer 140, a second insulating layer 150, and a second electrode 160 on a substrate 100 formed of silicon (Si). Pt and Ru are sequentially stacked in the first electrode 110 from the substrate 100 side. The magnetic layer 121A is formed of Mo, and Co and Pt are repeatedly stacked three times in the first magnetic layer 121B. The first magnetic metal layer 121C is formed of Co, and the non-magnetic metal layer 122 is formed of Ir. The second magnetic metal layer 123A is formed of Co, and Mo and CoFeB are alternately stacked in the second non-magnetic layer 123B. The second magnetic layer 123C is formed of Co. The first insulating layer 130 is formed of MgO, and CoFeB and Mo are sequentially stacked in the magnetized free layer 140. The second insulating layer 150 is formed of MgO, and the second electrode 160 is formed of Ta or Ru. The magnetoresistive effect element 3 according to the third embodiment of this disclosure can be formed in this stacked structure.

[0119] <4. Application Examples>

[0120] Subsequently, an electronic device according to embodiments of the present disclosure will be described. The electronic device according to embodiments of the present disclosure is various electronic devices on which a circuit including the aforementioned magnetoresistive element is mounted. Reference will be made to... Figures 10A to 10C An example of such an electronic device according to this embodiment is described. Figures 10A to 10C This is an external view showing an example of an electronic device according to this embodiment.

[0121] For example, the electronic device according to this embodiment can be an electronic device such as a smartphone. Specifically, such as Figure 10A As shown, the smartphone 900 includes a display unit 901 that displays various information and an operation unit 903 that includes buttons for accepting user input. Here, the circuitry installed in the smartphone 900 may incorporate the aforementioned magnetoresistive element, for example, as an MRAM.

[0122] For example, the electronic device according to this embodiment can be an electronic device such as a digital camera. Specifically, such as Figure 10B and Figure 10C As shown, the digital camera 910 includes a main body (camera body) 911, an interchangeable lens unit 913, a grip 915 held by the user during shooting, a monitor unit 917 displaying various information, and a viewfinder (EVF) 919 displaying a through-view image observed by the user during shooting. Furthermore, Figure 10B This is an exterior view of the digital camera 910 from the front (i.e., the subject side), and Figure 10C This is an external view of the digital camera 910 from the rear (i.e., the photographer's side). Here, the circuitry mounted on the digital camera 910 may include the aforementioned magnetoresistive element, for example, as an MRAM.

[0123] However, the electronic device according to this embodiment is not limited to the examples above. The electronic device according to this embodiment can be an electronic device in any field. Examples of such electronic devices include, for instance, eyeglasses-type wearable devices, head-mounted displays (HMDs), television devices, e-books, personal digital assistants (PDAs), laptop computers, cameras, gaming devices, etc.

[0124] Although preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, the scope of the present disclosure is not limited to such examples. It will be apparent to those skilled in the art that various modifications or alterations can be conceived within the scope of the technical ideas set forth in the claims, and it should be understood that such modifications or alterations naturally fall within the scope of the present invention.

[0125] Furthermore, the effects described in this specification are merely illustrative or exemplary and are not intended to be limiting. That is, in addition to or in lieu of the effects described herein, the technology according to this disclosure may exhibit other effects that will be apparent to those skilled in the art based on the description herein.

[0126] In addition, the following structures also fall within the technical scope of this disclosure.

[0127] (1) A magnetoresistive effect element, comprising: a first electrode;

[0128] A magnetization fixing layer is disposed on the first electrode and has a fixed magnetization direction;

[0129] A first insulating layer is disposed on the magnetized fixing layer;

[0130] A magnetized free layer is disposed on the first insulating layer and has a variable magnetization direction;

[0131] A second insulating layer is disposed on the magnetized free layer; and

[0132] The second electrode is disposed on the second insulating layer.

[0133] in

[0134] The magnetization fixing layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body through a non-magnetic metal layer.

[0135] At least one of the first magnetic body and the second magnetic body is formed by providing a magnetic layer directly above the non-magnetic layer, and

[0136] The non-magnetic layer or the magnetic layer is formed as a multilayer structure in which different materials are alternately stacked.

[0137] (2) According to the magnetoresistive effect element described in (1) above, the first magnetic body is formed by providing a first magnetic layer of different metal materials alternately stacked directly above a first non-magnetic layer formed of a non-magnetic metal material.

[0138] (3) The magnetoresistive effect element according to (2) above, wherein the nonmagnetic metal material forming the first nonmagnetic layer comprises any of Mo, W and Ir.

[0139] (4) The magnetoresistive effect element according to (2) or (3) above, wherein the thickness of the first non-magnetic layer is 0.4 nm or more and 2.2 nm or less.

[0140] (5) According to the magnetoresistive effect element described in (1) above, wherein the second magnetic body is constructed by providing a second magnetic layer formed of a magnetic material containing a 3d transition metal and B directly above a second non-magnetic layer on which magnetic materials containing a 3d transition metal and B and non-magnetic metal materials are alternately stacked.

[0141] (6) The magnetoresistive effect element according to (5) above, wherein the non-magnetic metal material forming one layer of the second non-magnetic layer comprises any of Mo, W and Ir.

[0142] (7) The magnetoresistive effect element according to (5) or (6) above, wherein the second nonmagnetic layer is configured as a stacked structure, wherein at least one of the uppermost and lowermost layers in the stacked structure is a layer formed of a nonmagnetic metallic material.

[0143] (8) The magnetoresistive effect element according to any one of (5) to (7) above, wherein the thickness of the layer formed of the nonmagnetic metal material in the second nonmagnetic layer is 0.07 nm or more and 0.15 nm or less.

[0144] (9) The magnetoresistive effect element according to any one of (5) to (8) above, wherein the volume ratio of the nonmagnetic metal material to the magnetic material comprising the 3d transition metal and B in the entire second nonmagnetic layer is from 48.3%:51.7% to 75.9%:24.1%.

[0145] (10) The magnetoresistive effect element according to any one of (1) to (9) above, wherein the first insulating layer and the second insulating layer are formed of insulating oxide material.

[0146] (11) The magnetoresistive effect element according to any one of (1) to (10) above, wherein the magnetized free layer comprises a magnetic layer formed of a magnetic material comprising a 3d transition metal and B.

[0147] (12) The magnetoresistive effect element according to any one of (1) to (11) above, wherein the first magnetic body and the second magnetic body each further include a magnetic layer formed of a magnetic metal material.

[0148] (13) A storage element, comprising: a first electrode;

[0149] A magnetization fixing layer is disposed on the first electrode and has a fixed magnetization direction;

[0150] A first insulating layer is disposed on the magnetized fixing layer;

[0151] A magnetized free layer is disposed on the first insulating layer and has a variable magnetization direction;

[0152] A second insulating layer is disposed on the magnetized free layer; and

[0153] The second electrode is disposed on the second insulating layer.

[0154] in

[0155] The magnetization fixing layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body through a non-magnetic metal layer.

[0156] At least one of the first magnetic body and the second magnetic body is formed by providing a magnetic layer directly above the non-magnetic layer, and

[0157] The non-magnetic layer or the magnetic layer is formed as a multilayer structure in which different materials are alternately stacked.

[0158] (14) An electronic device including a magnetoresistive element,

[0159] The magnetoresistive element includes: a first electrode; a magnetization fixed layer disposed on the first electrode and having a fixed magnetization direction; a first insulating layer disposed on the magnetization fixed layer; a magnetization free layer disposed on the first insulating layer and having a variable magnetization direction; a second insulating layer disposed on the magnetization free layer; and a second electrode disposed on the second insulating layer.

[0160] in

[0161] The magnetization fixing layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body through a non-magnetic metal layer.

[0162] At least one of the first magnetic body and the second magnetic body is formed by providing a magnetic layer directly above the non-magnetic layer, and

[0163] The non-magnetic layer or the magnetic layer is formed as a multilayer structure in which different materials are alternately stacked.

[0164] List of reference numerals

[0165] 1, 2, 3, 10, 20, 30 Magnetoresistive effect elements

[0166] 100 substrates

[0167] 110 First Electrode

[0168] 120 Magnetization Fixing Layer

[0169] 121 First Magnetic Body

[0170] 121A First Non-Magnetic Layer

[0171] 121B First Magnetic Layer

[0172] 121C First Magnetic Metal Layer

[0173] 122 Non-magnetic metal layer

[0174] 123 Second magnetic body

[0175] 123A Second Magnetic Metal Layer

[0176] 123B Second Non-Magnetic Layer

[0177] 123C Second Magnetic Layer

[0178] 130 First Insulation Layer

[0179] 140 Magnetized Free Layer

[0180] 150 Second Insulation Layer

[0181] 160 Second electrode

Claims

1. A magnetoresistive effect element, comprising: First electrode; A magnetization fixing layer is disposed on the first electrode and has a fixed magnetization direction; A first insulating layer is disposed on the magnetized fixing layer; A magnetized free layer is disposed on the first insulating layer and has a variable magnetization direction; A second insulating layer is disposed on the magnetized free layer; and The second electrode is disposed on the second insulating layer. in The magnetization fixing layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body through a non-magnetic metal layer. The first magnetic material includes a first non-magnetic layer directly disposed on the first electrode and a first magnetic layer disposed directly above the first non-magnetic layer, and The first non-magnetic layer of the first magnetic body is directly disposed above the first electrode to eliminate the mismatch in crystal orientation between the first electrode and the first magnetic layer of the first magnetic body, and the non-magnetic metal material forming the first non-magnetic layer includes any material of Mo, W and Ir and the film thickness of the first non-magnetic layer is more than 0.4 nm and less than 2.2 nm, and the first magnetic layer is formed by repeatedly and alternately stacking Co and Pt.

2. The magnetoresistive effect element according to claim 1, wherein, The second magnetic body is constructed by placing a second magnetic layer made of a magnetic material containing a 3d transition metal and B directly above a second non-magnetic layer on which magnetic materials containing 3d transition metal and B are alternately stacked and non-magnetic metallic materials.

3. The magnetoresistive effect element according to claim 2, wherein, The nonmagnetic metallic material forming one layer of the second nonmagnetic layer includes any of Mo, W, and Ir.

4. The magnetoresistive effect element according to claim 2, wherein, The second non-magnetic layer is configured as a stacked structure, wherein at least one of the uppermost and lowermost layers in the stacked structure is a layer formed of a non-magnetic metallic material.

5. The magnetoresistive effect element according to claim 2, wherein, The thickness of the layer formed by the non-magnetic metal material in the second non-magnetic layer is 0.07 nm or more and 0.15 nm or less.

6. The magnetoresistive effect element according to claim 2, wherein, The volume ratio of the nonmagnetic metallic material to the magnetic material comprising the 3d transition metal and B in the entire second nonmagnetic layer is from 48.3%:51.7% to 75.9%:24.1%.

7. The magnetoresistive effect element according to claim 1, wherein, The first insulating layer and the second insulating layer are formed of insulating oxide material.

8. The magnetoresistive effect element according to claim 1, wherein, The magnetized free layer comprises a magnetic layer formed of a magnetic material containing a 3d transition metal and B.

9. The magnetoresistive effect element according to claim 1, wherein, The first magnetic body and the second magnetic body each further include a magnetic layer formed of a magnetic metal material.

10. A storage element, comprising: First electrode; A magnetization fixing layer is disposed on the first electrode and has a fixed magnetization direction; A first insulating layer is disposed on the magnetized fixing layer; A magnetized free layer is disposed on the first insulating layer and has a variable magnetization direction; A second insulating layer is disposed on the magnetized free layer; and The second electrode is disposed on the second insulating layer. in The magnetization fixing layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body through a non-magnetic metal layer. The first magnetic material includes a first non-magnetic layer directly disposed on the first electrode and a first magnetic layer disposed directly above the first non-magnetic layer, and Wherein, the first non-magnetic layer of the first magnetic body is directly disposed above the first electrode to eliminate the mismatch in crystal orientation between the first electrode and the first magnetic layer of the first magnetic body, and wherein the non-magnetic metal material forming the first non-magnetic layer includes any material of Mo, W and Ir and the film thickness of the first non-magnetic layer is more than 0.4 nm and less than 2.2 nm, and wherein the first magnetic layer is formed by repeatedly and alternately stacking Co and Pt.

11. An electronic device including a magnetoresistive element, The magnetoresistive effect element includes: First electrode; A magnetization fixing layer is disposed on the first electrode and has a fixed magnetization direction; A first insulating layer is disposed on the magnetized fixing layer; A magnetized free layer is disposed on the first insulating layer and has a variable magnetization direction; A second insulating layer is disposed on the magnetized free layer; And a second electrode, disposed on the second insulating layer. in The magnetization fixing layer includes a first magnetic body disposed on the first electrode and a second magnetic body disposed on the first magnetic body through a non-magnetic metal layer. The first magnetic material includes a first non-magnetic layer directly disposed on the first electrode and a first magnetic layer disposed directly above the first non-magnetic layer, and Wherein, the first non-magnetic layer of the first magnetic body is directly disposed above the first electrode to eliminate the mismatch in crystal orientation between the first electrode and the first magnetic layer of the first magnetic body, and wherein the non-magnetic metal material forming the first non-magnetic layer includes any material of Mo, W and Ir and the film thickness of the first non-magnetic layer is more than 0.4 nm and less than 2.2 nm, and wherein the first magnetic layer is formed by repeatedly and alternately stacking Co and Pt.

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