Semiconductor device and method for forming the same

Abstract

Various embodiments of the present application relate to a semiconductor device including a trench capacitor, the trench capacitor including a plurality of lateral protrusions. In some embodiments, the trench capacitor includes a dielectric structure located above a substrate. The dielectric structure may include a plurality of dielectric layers overlying the substrate. The dielectric structure may include a plurality of lateral recesses. In some embodiments, the plurality of lateral protrusions extend toward and fill the plurality of lateral recesses. By forming a trench capacitor having the plurality of lateral protrusions filling the plurality of lateral recesses, the surface area of ​​the capacitor is increased without increasing the depth of the trench. Therefore, a larger capacitance value can be obtained without having to increase the depth of the trench, and therefore without having to increase the size of the semiconductor device.

Description

Technical Field

[0001] An embodiment of the present invention relates to a semiconductor device and a method for forming the same. Background Art

[0002] Mobile phones and other mobile devices often rely on ceramic capacitors and other passive components. These capacitors are discretely mounted to the printed circuit board (PCB) of the mobile device and electrically coupled to the integrated circuit (IC) of the mobile device through the PCB. However, this approach uses a large amount of surface area on the PCB and therefore limits the size of the mobile device and / or the functionality of the mobile device. In addition, discretely mounting and electrically coupling passive components will increase manufacturing costs. Therefore, mobile devices are increasingly turning to integrated passive devices (IPDs) to reduce size, reduce cost and increase functionality. An IPD is a collection of one or more passive components embedded in a single monolithic device and packaged as an integrated circuit (IC). Summary of the invention

[0003] An embodiment of the present invention provides a semiconductor device, comprising: a semiconductor substrate; a plurality of dielectric layers overlying the semiconductor substrate and defining a groove, wherein the groove comprises a plurality of lateral recesses; and a trench capacitor overlying the semiconductor substrate and filling the groove, wherein the trench capacitor comprises a first capacitor structure and a second capacitor structure laterally adjacent to the first capacitor structure, wherein the first capacitor structure comprises: a first lateral protrusion extending toward a first lateral recess among the plurality of lateral recesses and filling the first lateral recess; a second lateral protrusion extending toward the second capacitor structure; and a third lateral protrusion extending toward the second capacitor structure, wherein the second capacitor structure comprises: a fourth lateral protrusion extending toward the first capacitor structure and arranged between the second lateral protrusion and the third lateral protrusion in a vertical direction.

[0004] An embodiment of the present invention provides a semiconductor device, comprising: a semiconductor substrate; a dielectric structure, disposed on the semiconductor substrate; and a trench capacitor structure, overlying the semiconductor substrate and arranged in the dielectric structure, the trench capacitor structure comprising: a first capacitor structure, overlying the semiconductor substrate and disposed in the dielectric structure, the first capacitor structure comprising: a first conductive trunk, extending along a first axis perpendicular to the upper surface of the semiconductor substrate; and a plurality of first conductive branches, extending outward from the first conductive trunk and extending perpendicularly to the first axis; and a second capacitor structure, overlying the semiconductor substrate and disposed in the dielectric structure adjacent to the first capacitor structure in the lateral direction, the second capacitor structure comprising: a second conductive trunk, extending parallel to the first axis; and a plurality of second conductive branches, extending outward from the second conductive trunk and extending perpendicularly to the first axis, wherein the plurality of first conductive branches are staggered with the plurality of second conductive branches.

[0005] An embodiment of the present invention provides a method for forming a semiconductor device, comprising: forming a dielectric structure including a plurality of dielectric layers on a semiconductor substrate; patterning the dielectric structure using a first etch to form a first group of grooves; patterning the dielectric structure using a second etch to form a first group of lateral recesses extending outward from the first group of grooves in the first group of grooves; forming a first group of capacitor structures in the first group of grooves and along the first group of lateral recesses, wherein the first group of capacitor structures includes a first group of lateral protrusions extending outward from the first group of capacitor structures and filling the first group of lateral recesses; patterning the dielectric structure using a third etch to form a second group of grooves; patterning the dielectric structure using a fourth etch to form a second group of lateral recesses extending outward from the second group of grooves in the second group of grooves; and forming a second group of capacitor structures in the second group of grooves and along the second group of lateral recesses, wherein the second group of capacitor structures includes a second group of lateral protrusions extending outward from the second group of capacitor structures and filling the second group of lateral recesses. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The various aspects of the present disclosure will be best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the size of the various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1A and Figure 1B Cross-sectional views of some embodiments of semiconductor devices including trench capacitors are illustrated.

[0008] Figure 2 exemplify Figure 1A and Figure 1B A top view of some embodiments of a semiconductor device.

[0009] Figure 3A and Figure 3B Cross-sectional views of some alternative embodiments of semiconductor devices including trench capacitors are illustrated.

[0010] Figure 4 exemplify Figure 3A and Figure 3B A top view of some embodiments of a semiconductor device.

[0011] FIG. 5A to FIG. 5J exemplify the formation Figure 1A , Figure 1B and Figure 2 A series of cross-sectional views of some embodiments of a method of manufacturing a semiconductor device.

[0012] FIG. 6A to FIG. 6H exemplify the formation Figure 3A , Figure 3B and Figure 4 A series of cross-sectional views of some embodiments of a method of manufacturing a semiconductor device.

[0013] Figure 7 and Figure 8 Examples are shown FIG. 5A to FIG. 5J and FIG. 6A to FIG. 6H Flowcharts of some embodiments of the method. DETAILED DESCRIPTION

[0014] The present disclosure provides many different embodiments or examples for implementing the different features of the present disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, the following description in which a first feature is formed on or on a second feature may include an embodiment in which the first feature and the second feature are formed to be in direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may reuse reference numbers and / or letters in various examples. This repetition is for the purpose of brevity and clarity, rather than indicating the relationship between the various embodiments and / or configurations discussed by itself.

[0015] Furthermore, for ease of description, spatially relative terms such as "beneath," "below," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or feature shown in a figure to another (other) element or feature. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be in other orientations (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may be interpreted accordingly.

[0016] Trench capacitors are often embedded in integrated passive devices (IPDs) and are used to replace ceramic capacitors to reduce the size of mobile devices, reduce the cost of mobile devices, increase the functionality of mobile devices, or any combination of the foregoing effects. In some cases, a semiconductor device may include a trench capacitor. The trench capacitor may overlie a substrate and fill a trench defined by the substrate. The trench may include only vertical sidewalls. A first conductor may fill the trench and the line wall of the trench. An insulator may overlie the first conductor and the line wall of the first conductor. A second conductor may overlie the insulator and the line wall of the insulator.

[0017] The challenge of conventional trench capacitors is that since the trenches only include vertical sidewalls, the surface area of ​​the conductive layer is limited by the trench depth, and thus the capacitance of the trench capacitor is also limited by the trench depth. Therefore, obtaining a larger capacitance value requires increasing the depth of the trench and may also increase the cost of manufacturing the trench capacitor.

[0018] Various embodiments of the present application relate to a semiconductor device including a trench capacitor, the trench capacitor including a plurality of lateral protrusions. In some embodiments, the trench capacitor includes a dielectric structure located above a substrate. The dielectric structure may include a plurality of dielectric layers overlying the substrate. The dielectric structure may include a plurality of lateral recesses. In some embodiments, the plurality of lateral protrusions extend toward and fill the plurality of lateral recesses. By forming a trench capacitor having the plurality of lateral protrusions filling the plurality of lateral recesses, the surface area of ​​the capacitor is increased without increasing the depth of the trench. Therefore, a larger capacitance value can be obtained without having to increase the depth of the trench, and therefore without having to increase the size of the semiconductor device.

[0019] Reference Figure 1A, cross-sectional views of some embodiments of semiconductor devices 100 including trench capacitors 130 are provided. The semiconductor device 100 may be or include an integrated circuit (IC), an IPD, or some other semiconductor device. The semiconductor device 100 includes a substrate 101A and a dielectric structure 104 located on the substrate. The substrate 101A may be or include silicon, germanium, any III-V compound, or any other suitable semiconductor material. The substrate 101A may have a thickness of 50 angstroms or greater.

[0020] The dielectric structure 104 includes a plurality of dielectric layers 102A to 102D or 103A to 103C. The plurality of dielectric layers 102A to 102D or 103A to 103C include a first set of dielectric layers 102A to 102D and a second set of dielectric layers 103A to 103C. The first set of dielectric layers 102A to 102D and the second set of dielectric layers 103A to 103C may be disposed one above the other in an alternating manner. The first set of dielectric layers 102A to 102D and the second set of dielectric layers 103A to 103C may include silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, or any other suitable dielectric material. The first set of dielectric layers 102A to 102D may include a first dielectric material, and the second set of dielectric layers 103A to 103C may include a second dielectric material different from the first dielectric material. For example, the first dielectric material and the second dielectric material generally have different etching rates for a predetermined etch. Each layer in the first set of dielectric layers 102A to 102D and the second set of dielectric layers 103A to 103C may have a thickness of 50 angstroms to 10 microns. The plurality of dielectric layers 102A to 102D or 103A to 103C may further include a plurality of lateral recesses.

[0021] In some embodiments, the trench capacitor 130 includes a first capacitor structure 131 (capacitor structure 131-1 and capacitor structure 131-2 herein are collectively referred to as the first capacitor structure 131) and a second capacitor structure 132 (capacitor structure 132-1 and capacitor structure 132-2 herein are collectively referred to as the second capacitor structure 132) adjacent to the first capacitor structure 131 in the lateral direction. The first capacitor structure 131 includes a first conductive trunk 106 extending along a first axis 109. The first capacitor structure 131 also includes: a first group of lateral protrusions 151A to 154A extending toward the plurality of lateral recesses and filling the plurality of lateral recesses. The first capacitor structure 131 may also include: a second group of lateral protrusions 151B to 154B extending toward the second capacitor structure 132. The first group of lateral protrusions 151A to 154A and the second group of lateral protrusions 151B to 154B may be referred to as a plurality of first conductive branches extending outward from the first conductive trunk 106 and extending perpendicular to the first axis 109. The second capacitor structure 132 includes a second conductive trunk 108 extending parallel to the first axis 109. The second capacitor structure also includes: a third group of lateral protrusions 161A to 163A extending toward the first capacitor structure 131. The third group of lateral protrusions 161A to 163A are staggered with the second group of lateral protrusions 151B to 154B. The second capacitor structure 132 may also include: a fourth group of lateral protrusions 161B to 163B extending toward a third capacitor structure 133 (capacitor structure 133-1 and capacitor structure 133-2 herein are collectively referred to as third capacitor structure 133) adjacent to the second capacitor structure 132 in the lateral direction. The fourth group of lateral protrusions 161B to 163B may be staggered with the lateral protrusions (not labeled) of the third capacitor structure 133. The third group of lateral protrusions and the fourth group of lateral protrusions may be referred to as a plurality of second conductive branches extending outward from the second conductive trunk 108 and extending perpendicular to the first axis 109. In some embodiments, the trench capacitor 130 may further include: a fourth capacitor structure 134 (capacitor structure 134-1 and capacitor structure 134-2 herein are collectively referred to as fourth capacitor structure 134), which is laterally adjacent to the third capacitor structure 133; and a fifth capacitor structure 135 (capacitor structure 135-1 and capacitor structure 135-2 herein are collectively referred to as fifth capacitor structure 135), which is laterally adjacent to the fourth capacitor structure 134, each of the capacitor structures including a lateral protrusion (not labeled). The third capacitor structure 133, the fourth capacitor structure 134, and the fifth capacitor structure 135 each include a conductive trunk (not labeled) extending parallel to the first axis 109.Additionally, each of the lateral protrusions (not labeled) of the third capacitor structure 133, the fourth capacitor structure 134, and the fifth capacitor structure 135 may be referred to as conductive branches (not labeled) extending outwardly from their respective conductive trunks (not labeled) and extending perpendicularly to the first axis 109. In some embodiments, the trench capacitor 130 may include a different number of capacitor structures.

[0022] In some embodiments, the first capacitor structure 131, the third capacitor structure 133, and the fifth capacitor structure 135 include: a first external electrode layer 111A, overlying the substrate and lining the plurality of lateral recesses; a first insulator layer 112A, overlying the first external electrode layer 111A and lining the first external electrode layer 111A; a first internal electrode layer 113A, overlying the first insulator layer 112A and lining the first insulator layer 112A; and a first set of cavities 114A (e.g., air gaps) disposed within the first internal electrode layer 113A. The first external electrode layer 111A and the first internal electrode layer 113A may be or include titanium, titanium nitride, tantalum, tantalum nitride, any other metal, or any other suitable material. The first insulator layer 112A may include silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide, some other dielectric, or any combination of the foregoing materials. The first set of cavities 114A may contain air, an inert or rare gas, a vacuum, or some other gas. The first outer electrode layer 111A and the first inner electrode layer 113A may have a thickness of 50 angstroms to 500 angstroms. The first insulator layer 112A may have a thickness of 10 angstroms to 200 angstroms. In some embodiments, the first capacitor structure 131, the third capacitor structure 133, and the fifth capacitor structure 135 may include different numbers of electrode layers and insulator layers.

[0023] In some embodiments, the second capacitor structure 132 and the fourth capacitor structure 134 include: a second external electrode layer 111B, overlying the substrate; a second insulator layer 112B, overlying the second external electrode layer 111B and lining the second external electrode layer 111B; a second internal electrode layer 113B, overlying the second insulator layer 112B and lining the second insulator layer 112B; and a second set of cavities 114B, disposed within the second internal electrode layer 113B. The second external electrode layer 111B and the second internal electrode layer 113B may be or include titanium, titanium nitride, tantalum, tantalum nitride, any other metal, or any other suitable material. The second insulator layer 112B may include silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide, some other dielectric, or any combination of the foregoing materials. The second set of cavities 114B may include air, an inert or rare gas, a vacuum, or some other gas. The second outer electrode layer 111B and the second inner electrode layer 113B may have a thickness of 50 angstroms to 500 angstroms. The second insulator layer 112B may have a thickness of 10 angstroms to 200 angstroms. In some embodiments, the second capacitor structure 132 and the fourth capacitor structure 134 may include different numbers of electrode layers and insulator layers.

[0024] In some embodiments, the first external electrode layer 111A contacts the second external electrode layer 111B at one or more locations, so that the first external electrode layer 111A and the second external electrode layer 111B together establish a single external electrode of the trench capacitor 130. For example, the first external electrode layer 111A may contact the second external electrode layer 111B along any of the interfaces between the first capacitor structure 131 and the second capacitor structure 132, the interfaces between the second capacitor structure 132 and the third capacitor structure 133, the interfaces between the third capacitor structure 133 and the fourth capacitor structure 134, and the interfaces between the fourth capacitor structure 134 and the fifth capacitor structure 135.

[0025] In addition, in some embodiments, the first internal electrode layer 113A is connected to the first internal electrode layer 113A by, for example, an ohmic contact or an interconnect structure ( Figure 1A The first and second insulator layers 112A and 112B are electrically coupled to the second internal electrode layer 113B, such that the first internal electrode layer 113A and the second internal electrode layer 113B together establish a single internal electrode of the trench capacitor 130. The first insulator layer 112A and the second insulator layer 112B isolate the external electrodes (e.g., 111A, 111B) and the internal electrodes (113A, 113B) from each other, such that the total capacitance of the trench capacitor 130 is defined between the external electrodes and the internal electrodes.

[0026] In some embodiments, the semiconductor device 100 includes a support layer 101B located on the plurality of dielectric layers 102A to 102D or 103A to 103C. The support layer 101B may be or include polysilicon. The support layer 101B may include the same or different material as the substrate 101A. The support layer 101B may have a thickness of 50 angstroms to 1000 angstroms.

[0027] In some embodiments, the semiconductor device 100 includes a cap layer 120A or 120B located above the first group of cavities 114A and the second group of cavities 114B. The cap layer 120A or 120B may include silicon oxide, silicon nitride, or any other dielectric material. The cap layer 120A or 120B may have a thickness of 50 angstroms to 1000 angstroms.

[0028] In some embodiments, the semiconductor device 100 includes an isolation layer 125 overlying the cap layer 120A. The isolation layer 125 may be a passivation layer. The isolation layer 125 may include silicon oxide, silicon nitride, or any other dielectric material. The isolation layer 125 may have a thickness of 50 angstroms to 1000 angstroms.

[0029] As described above, the lateral protrusions of trench capacitor 130 allow the surface area of ​​trench capacitor 130 to be increased without increasing the depth of trench capacitor 130. Thus, greater capacitance values ​​may be obtained without necessarily increasing the cost of manufacturing semiconductor device 100.

[0030] Reference Figure 1B ,supply Figure 1A Another cross-sectional view of some embodiments of the semiconductor device 100. The semiconductor device 100 includes a first trench capacitor 130-1 and a second trench capacitor 130-2. In some embodiments, the first trench capacitor is Figure 1A The semiconductor device 100 further includes a first contact 141 and a second contact 142 located on the dielectric structure 104. The first contact 141 extends through the first internal electrode layer 113A and the first insulator layer 112A and is coupled to the first external electrode layer 111A. The second contact 142 is coupled to the first internal electrode layer 113A. The first contact 141 and the second contact 142 are separated in a lateral direction.

[0031] Reference Figure 2 ,supply Figure 1A and Figure 1B A top view of some embodiments of a semiconductor device. Figure 1A The illustrated cross-sectional view may be taken, for example, along line AA'. Figure 1B The illustrated cross-sectional view may be taken, for example, along line BB'.

[0032] In some embodiments, each of the first contacts 141 is electrically connected (tied) together (see, e.g., line 143), and each of the second contacts 142 is electrically connected together (see, e.g., line 145). In some embodiments, the first trench capacitor 130-1 and the second trench capacitor 130-2 have a top view of a rectangular shape. In other embodiments, the first trench capacitor 130-1 and the second trench capacitor 130-2 may include other shapes of top view. For example, an oval, a square, a circle, or some other suitable shape.

[0033] Reference Figure 3A , cross-sectional views of some embodiments of semiconductor devices 200 including trench capacitors 230 are provided. In general, Figure 3A The trench capacitor 230 has the same Figure 1A However, in addition, trench capacitor 230 has additional dielectric material (e.g., 300, 302) extending parallel to first axis 209, which separates the sidewalls of adjacent conductive trunks of the capacitor structure from each other. For example, instead, Figure 1A Adjacent conductive trunks of the capacitor structure in the trench 230 have sidewalls that are in direct contact with each other. As will be understood in more detail below, trench capacitor 230 also includes Figure 1A The additional support layers 201B to 201G are illustrated in FIG. 1 , but it should be understood that such features may also be included in the Figure 1A In some embodiments consistent with.

[0034] More specifically, the semiconductor device 200 may be or include an integrated circuit (IC), an IPD, or some other semiconductor device. The semiconductor device 200 includes a substrate 201A and a dielectric structure 204 located on the substrate. The substrate 201A may be or include silicon, germanium, any III-V compound, or any other suitable semiconductor material. The substrate 201A may have a thickness of 50 angstroms or greater.

[0035] The dielectric structure 204 includes a plurality of dielectric layers 202A to 202D or 203A to 203C and a plurality of support layers 201B to 201G. The plurality of dielectric layers 202A to 202D or 203A to 203C include a first group of dielectric layers 202A to 202D and a second group of dielectric layers 203A to 203C. The first group of dielectric layers 202A to 202D and the second group of dielectric layers 203A to 203C may be arranged one above the other in an alternating manner. The first group of dielectric layers 202A to 202D and the second group of dielectric layers 203A to 203C may include silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, or any other suitable dielectric material. The first group of dielectric layers 202A to 202D may include a material different from that of the second group of dielectric layers 203A to 203C. Each layer of the first set of dielectric layers 202A-202D and the second set of dielectric layers 203A-203C may have a thickness of 50 angstroms to 20 microns. The plurality of dielectric layers 202A-202D or 203A-203C may further include a plurality of lateral recesses.

[0036] The plurality of support layers 201B to 201G may include polysilicon. The plurality of support layers may include the same material as the substrate 201A. The plurality of support layers 201B to 201G may be stacked between each of the plurality of dielectric layers 202A to 202D or 203A to 203C, such that each of the plurality of support layers 201B to 201G is disposed in a vertical direction between a layer in the first set of dielectric layers 202A to 202D and a layer in the second set of dielectric layers 203A to 203C. For example, the first support layer 201B may be disposed in a vertical direction between a first dielectric layer 202A in the first set of dielectric layers 202A to 202D and a second dielectric layer 203A in the second set of dielectric layers 203A to 203C.

[0037] In some embodiments, the trench capacitor 230 includes a first capacitor structure 231 (capacitor structure 231-1 and capacitor structure 231-2 herein are collectively referred to as the first capacitor structure 231) and a second capacitor structure 232 (capacitor structure 232-1 and capacitor structure 232-2 herein are collectively referred to as the second capacitor structure 232) adjacent to the first capacitor structure 231 in the lateral direction. The first capacitor structure 231 includes: a first conductive trunk; and a first group of lateral protrusions (or branches) 251A to 254A extending toward the plurality of lateral recesses and filling the plurality of lateral recesses. The first capacitor structure 231 may also include: a second group of lateral protrusions 251B to 254B extending toward the second capacitor structure 232. In some embodiments, the second capacitor structure 232 includes: a second conductive trunk; and a third group of lateral protrusions (or branches) 261A to 263A extending toward the first capacitor structure 231. The third group of transverse protrusions 261A to 263A may be staggered with the second group of transverse protrusions 251B to 254B. The second capacitor structure 232 may further include: a fourth group of transverse protrusions 261B to 263B extending toward a third capacitor structure 233 (capacitor structure 233-1 and capacitor structure 233-2 herein are collectively referred to as third capacitor structure 233) that is laterally adjacent to the second capacitor structure 232. The fourth group of transverse protrusions 261B to 263B may be staggered with the transverse protrusions (not labeled) of the third capacitor structure 233. In some embodiments, the trench capacitor 230 may further include: a fourth capacitor structure 234 (capacitor structure 234-1 and capacitor structure 234-2 herein are collectively referred to as fourth capacitor structure 234), which is laterally adjacent to the third capacitor structure 233; and a fifth capacitor structure 235 (capacitor structure 235-1 and capacitor structure 235-2 herein are collectively referred to as fifth capacitor structure 235), which is laterally adjacent to the fourth capacitor structure 234, each including a lateral protrusion (not labeled). In some embodiments, the trench capacitor 230 may include a different number of capacitor structures.

[0038] In some embodiments, the first capacitor structure 231, the third capacitor structure 233, and the fifth capacitor structure 235 include: a first external electrode layer 211A, overlying the substrate and lining the plurality of lateral recesses; a first insulator layer 212A, overlying the first external electrode layer 211A and lining the first external electrode layer 211A; a first internal electrode layer 213A, overlying the first insulator layer 212A and lining the first insulator layer 212A; and a first set of cavities 214A, disposed within the first internal electrode layer 213A. The first external electrode layer 211A and the first internal electrode layer 213A may be or include titanium, titanium nitride, tantalum, tantalum nitride, any other metal, or any other suitable material. The first insulator layer 212A may include silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide, some other dielectric, or any combination of the foregoing materials. The first set of cavities 214A may contain air, an inert or rare gas, a vacuum, or some other gas. The first outer electrode layer 211A and the first inner electrode layer 213A may have a thickness of 50 angstroms to 500 angstroms. The first insulator layer 212A may have a thickness of 10 angstroms to 200 angstroms. In some embodiments, the first capacitor structure 231, the third capacitor structure 233, and the fifth capacitor structure 235 may include different numbers of electrode layers and insulator layers.

[0039] In some embodiments, the second capacitor structure 232 and the fourth capacitor structure 234 include: a second external electrode layer 211B, overlying the substrate; a second insulator layer 212B, overlying the second external electrode layer 211B and lining the second external electrode layer 211B; a second internal electrode layer 213B, overlying the second insulator layer 212B and lining the second insulator layer 212B; and a second set of cavities 214B, disposed within the second internal electrode layer 213B. The second external electrode layer 211B and the second internal electrode layer 213B may be or include titanium, titanium nitride, tantalum, tantalum nitride, any other metal, or any other suitable material. The second external electrode layer 211B includes the same material as the first external electrode layer 211A. The second insulator layer 212B may include silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide, some other dielectric, or any combination of the foregoing materials. The second set of cavities 214B may contain air, an inert or rare gas, a vacuum, or some other gas. The second outer electrode layer 211B and the second inner electrode layer 213B may have a thickness of 50 angstroms to 500 angstroms. The second insulator layer 212B may have a thickness of 10 angstroms to 200 angstroms. In some embodiments, the second capacitor structure 132 and the fourth capacitor structure 134 may include different numbers of electrode layers and insulator layers.

[0040] In some embodiments, the first external electrode layer 211A is separated from the second external electrode layer 211B in the lateral direction by the plurality of dielectric layers 202A to 202D or 203A to 203C at one or more locations. In some embodiments, the first external electrode layer 211A is separated from the second external electrode layer 211B in the vertical direction by the plurality of support layers 201B to 201G at one or more locations. For example, the first external electrode layer 211A may be separated from the second external electrode layer 211B by the dielectric structure 204 along any of the interfaces between the first capacitor structure 231 and the second capacitor structure 232, the interfaces between the second capacitor structure 232 and the third capacitor structure 233, the interfaces between the third capacitor structure 233 and the fourth capacitor structure 234, and the interfaces between the fourth capacitor structure 234 and the fifth capacitor structure 235.

[0041] In some embodiments, the semiconductor device 200 includes a top support layer 201H located on the plurality of dielectric layers 202A to 202D or 203A to 203C. The top support layer 201H may be or include polysilicon. The top support layer 201 may include the same or different material as the substrate 201A. The top support layer 201 may have a thickness of 50 angstroms to 1000 angstroms.

[0042] In some embodiments, the semiconductor device 200 includes a cap layer 220 located above the first group of cavities 214A and the second group of cavities 214B. The cap layer 220 may include silicon oxide, silicon nitride, or any other dielectric material. The cap layer 220 may have a thickness of 50 angstroms to 1000 angstroms.

[0043] In some embodiments, the semiconductor device 200 includes an isolation layer 225 overlying the cap layer 220. The isolation layer 225 may be a passivation layer. The isolation layer 225 may include silicon oxide, silicon nitride, or any other dielectric material. The isolation layer 225 may have a thickness of 50 angstroms to 1000 angstroms.

[0044] As described above, the lateral protrusions of trench capacitor 230 allow the surface area of ​​trench capacitor 230 to be increased without increasing the depth of trench capacitor 230. Thus, greater capacitance values ​​may be obtained without necessarily increasing the cost of manufacturing semiconductor device 200.

[0045] Reference Figure 3B ,supply Figure 3A Another cross-sectional view of some embodiments of a semiconductor device 200. The semiconductor device 200 includes a first trench capacitor 230-1 and a second trench capacitor 230-2. In some embodiments, the first trench capacitor is Figure 3AThe semiconductor device 200 further includes a first contact 241 and a second contact 242 located on the dielectric structure 204. The first contact 241 extends through the first internal electrode layer 213A and the first insulator layer 212A and is coupled to the first external electrode layer 211A. The second contact 242 is coupled to the first internal electrode layer 213A. The first contact 241 and the second contact 242 are separated in a lateral direction.

[0046] Reference Figure 4 ,supply Figure 3A and Figure 3B A top view of some embodiments of a semiconductor device. Figure 3A The illustrated cross-sectional view may be taken, for example, along line CC'. Figure 3B The illustrated cross-sectional view may be taken, for example, along line DD'.

[0047] In some embodiments, each of the first contacts 241 is electrically connected together and each of the second contacts 242 is electrically connected together. In some embodiments, the first trench capacitor 230-1 and the second trench capacitor 230-2 have a top view of a rectangular shape. In other embodiments, the first trench capacitor 230-1 and the second trench capacitor 230-2 may include other shapes of top view. For example, an oval, a square, a circle, or some other suitable shape.

[0048] Reference FIG. 5A to FIG. 5J , providing the formation Figure 1A , Figure 1B and Figure 2 A series of cross-sectional views of some embodiments of a method of manufacturing a semiconductor device 100. The semiconductor device 100 may be or include an IC, an IPD, or some other semiconductor device.

[0049] Reference Figure 5A, a dielectric structure 104 is formed on the substrate 101A. The dielectric structure 104 includes a plurality of dielectric layers 102A to 102D or 103A to 130C. The substrate 101A may be or include silicon, germanium, any III-V compound, or any other suitable semiconductor material. The substrate 101A may have a thickness of 50 angstroms or greater. The plurality of dielectric layers 102A to 102D or 103A to 103C include a first group of dielectric layers 102A to 102D and a second group of dielectric layers 103A to 103C. The first group of dielectric layers 102A to 102D and the second group of dielectric layers 103A to 103C may be formed one on the other in an alternating manner. For example, a first dielectric layer 102A of a first set of dielectric layers 102A to 102D is formed on a substrate 101A, a second dielectric layer 103A of a second set of dielectric layers 103A to 103C is formed on the first dielectric layer 102A, a third dielectric layer 102B of the first set of dielectric layers 102A to 102D is formed on the second dielectric layer 103A, and so on. The first set of dielectric layers 102A to 102D and the second set of dielectric layers 103A to 103C may include silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, or any other suitable dielectric material. The first set of dielectric layers 102A to 102D may include a different material from the second set of dielectric layers 103A to 103C. The first set of dielectric layers 102A to 102D includes a first dielectric material having a first etch rate for a predetermined etch, and the second set of dielectric layers 103A to 103C includes a second dielectric material having a second etch rate different from the first etch rate for the predetermined etch. For example, for the predetermined etch, the first etch rate may be higher than the second etch rate. Each of the first set of dielectric layers 102A to 102D and the second set of dielectric layers 103A to 103C may have a thickness of 50 angstroms to 10 microns. A support layer 101B is formed over the dielectric structure 104. The support layer 101B may be or include polysilicon. The support layer 101B may include a material that is the same as or different from the substrate 101A. The support layer 101B may have a thickness of 50 angstroms to 1000 angstroms.

[0050] Reference Figure 5B, a first mask 171 is formed over the support layer 101B, the dielectric structure 104, and the substrate 101A. With the first mask 171 in place, the support layer 101B and the dielectric structure 104 are then patterned to form a first set of trenches 181. The first mask 171 may include, for example, photoresist, silicon oxide, silicon nitride, some other mask material, or any combination of the foregoing materials. Patterning may include dry etching. In some embodiments, dry etching may utilize CF4 plasma, CHF3 plasma, C4F8 plasma, SF6 plasma, NF3 plasma, or some other plasma to pattern the dielectric structure 104. In some embodiments, dry etching may utilize Cl2 plasma, HBr plasma, Ar plasma, or some other plasma to pattern the support layer 101B.

[0051] Reference Figure 5C , and then a predetermined etch is applied so that the dielectric structure 104 is patterned with the first mask 171 in place to form a first group of lateral recesses 191 extending outward from the first group of trenches 181. The predetermined etch may include a wet etch, wherein a liquid of the wet etch fills the first group of trenches 181. Because the etching rate of the first dielectric material (e.g., 102A to 102D) is higher than the etching rate of the second dielectric material (e.g., 103A to 103C) for the predetermined etch, the first group of dielectric layers 102A to 102D may be wet-etched with high selectivity relative to the second group of dielectric layers 103A to 103C, so that the etchant etches the first group of dielectric layers 102A to 102D faster than the second group of dielectric layers 103A to 103C, thereby forming the first group of lateral recesses 191. The wet etch may utilize HF, H3PO4, tetramethylammonium hydroxide (TMAH), NH4OH, KOH, NaOH, some other etchant, or any combination of the foregoing materials to selectively etch the dielectric structure 104 to form a first group of lateral recesses 191. The predetermined etching may be performed for a predetermined time to control the lateral distance that the first group of lateral recesses 191 extend. In some embodiments, the lateral recesses in the first group of lateral recesses 191 may be symmetrical about the grooves in the first group of grooves 181 corresponding to the lateral recesses, so that a first distance 196 that the first group of lateral recesses 191 extend from the first group of grooves 181 is equal to a second distance 197 that the first group of lateral recesses 191 extend from the first group of grooves 181. In some embodiments, patterning includes removing the first mask 171 after applying the predetermined etch. Although Figure 5C An example is shown in which the first mask 171 remains in place while the predetermined etch is applied, but in some alternative embodiments, the first mask 171 may be removed before the predetermined etch is applied.

[0052] In some embodiments, the etching rate of the substrate 101A and the support layer 101B may be lower than the etching rate of the first dielectric material (e.g., 102A to 102D), so that the wet etchant may also etch the first set of dielectric layers 102A to 102D faster than the substrate 101A and the support layer 101B. Therefore, the predetermined etching may not cause the first set of trenches 181 to extend vertically into the substrate 101A or laterally into the support layer 101B.

[0053] In some embodiments, after applying a predetermined etching process, the sidewalls of the first set of dielectric layers 102A to 102D may be flat, such as Figure 5C In addition, after applying a predetermined etching, the sidewalls, upper surfaces and lower surfaces of the second set of dielectric layers 103A to 103C may be flat, so that the first set of lateral recesses 191 have a Figure 5C Square corners or sharp corners are illustrated. However, it should be understood that the aforementioned sidewalls, corners and / or surfaces may alternatively be curved or rounded due to the predetermined etching.

[0054] Reference Figure 5D, a first external electrode layer 111A is formed on the substrate 101A in the first set of grooves 181 and along the first set of lateral recesses 191. The first external electrode layer 111A can be formed by, for example, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), or atomic layer deposition (ALD). A first insulator layer 112A is then formed on and along the first external electrode layer 111A, and the first insulator layer 112A can be formed by, for example, CVD, PECVD, or ALD. A first internal electrode layer 113A is then formed on and along the first insulator layer 112A, and the first internal electrode layer 113A can be formed by, for example, CVD, PECVD, or ALD. Any of the deposition processes for forming any of the first external electrode layer 111A, the first insulator layer 112A, and the first internal electrode layer 113A may be performed for a predetermined time to control the thickness of the resulting first external electrode layer 111A, the thickness of the resulting first insulator layer 112A, and / or the thickness of the resulting first internal electrode layer 113A. The first external electrode layer 111A and the first internal electrode layer 113A may be or include titanium, titanium nitride, tantalum, tantalum nitride, any other metal, or any other suitable material. The first insulator layer 112A may include silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide, some other dielectric, or any combination of the foregoing materials. The first external electrode layer 111A and the first internal electrode layer 113A may have a thickness of 50 angstroms to 500 angstroms. Due to the tight geometry involved, the material of the first internal electrode layer 113A may not completely fill the space within the first insulator layer 112A, thereby leaving a first group of cavities 114A in the first internal electrode layer 113A. The first insulator layer 112A may have a thickness of 10 angstroms to 200 angstroms. A cap layer 120 is formed on the first group of cavities 114A, and the cavities may be sealed, for example, airtightly. The cap layer 120 may include silicon oxide, silicon nitride, or any other dielectric material. The cap layer 120 may have a thickness of 50 angstroms to 1000 angstroms. In other embodiments, the first internal electrode layer 113A may fill the entire space within the first insulator layer 112A, so that there is no first group of cavities 114A. In yet other embodiments, slight changes in the surface morphology of the first insulator layer 112A may cause the first internal electrode layer 113A to "pinch off" the first group of cavities 114A at different locations, which may be different for different capacitor structures.

[0055] Reference Figure 5E, a second mask 172 is formed on the first capacitor structure 131, the third capacitor structure 133, the fifth capacitor structure 135 and the cap layer 120. Then, the first capacitor structure 131, the third capacitor structure 133, the fifth capacitor structure 135 and the cap layer 120 are patterned with the second mask 172 in place. The patterning forms a first patterned cap layer 120A. The patterning may include any of wet etching or dry etching. In some embodiments, the patterning includes removing the second mask 172 after the etching process.

[0056] Reference Fig. 5F , an isolation layer 125 is formed on the first patterned cap layer 120A. The isolation layer 125 may be a passivation layer. The isolation layer 125 may include silicon oxide, silicon nitride, or any other dielectric material. The isolation layer 125 may have a thickness of 50 angstroms to 1000 angstroms.

[0057] Reference Figure 5G , a third mask 173 is formed over the isolation layer 125, the support layer 101B, the dielectric structure 104, and the substrate 101A. The isolation layer 125, the support layer 101B, and the dielectric structure 104 are then patterned with the third mask 173 in place to form a second set of trenches 182. The third mask 173 may include, for example, photoresist, silicon oxide, silicon nitride, some other mask material, or any combination of the foregoing materials. Patterning may include dry etching. In some embodiments, dry etching may utilize CF4 plasma, CHF3 plasma, C4F8 plasma, SF6 plasma, NF3 plasma, or some other plasma to pattern the dielectric structure 104. In some embodiments, dry etching may utilize Cl2 plasma, HBr plasma, Ar plasma, or some other plasma to pattern the support layer 101B.

[0058] Reference Figure 5H, the dielectric structure 104 is patterned with the third mask 173 in place to form a second set of lateral recesses 192 extending outwardly from the second set of trenches 182. The patterning may include wet etching. The two sets of dielectric layers 103A to 103C may be wet etched with high selectivity relative to the first set of dielectric layers 102A to 102D, so that the etchant etches the second set of dielectric layers 103A to 103C faster than the first set of dielectric layers 102A to 102D, thereby forming the second set of lateral recesses 192. The wet etching may utilize HF, H3PO4, TMAH, NH4OH, KOH, NaOH, some other etchant, or any combination of the foregoing materials to selectively etch the dielectric structure to form the second set of lateral recesses 192. The wet etching may be performed for a predetermined time to control the lateral distance that the second set of lateral recesses 192 extend. In some embodiments, a lateral recess in the second group of lateral recesses 192 may be symmetrical about a corresponding groove in the second group of grooves 182, such that a third distance 198 that the second group of lateral recesses 192 extends from the second group of grooves 182 is equal to a fourth distance 199 that the second group of lateral recesses 192 extends from the second group of grooves 182. In some embodiments, patterning includes removing the third mask 173 after the etching process. Although Figure 5H An example is shown in which the third mask 173 remains in place during the wet etch, but in some alternative embodiments, the third mask 173 may be removed prior to the wet etch.

[0059] In some embodiments, during wet etching, the etching rate of the substrate 101A and the support layer 101B may be lower than the etching rate of the second dielectric material (e.g., 103A to 103C). Therefore, the wet etching may not cause the second set of trenches 182 to extend vertically into the substrate 101A or laterally into the support layer 101B.

[0060] In some embodiments, after wet etching, the sidewalls, upper surfaces, and lower surfaces of the first capacitor structure 131, the third capacitor structure 133, and the fifth capacitor structure 135 may be flat, so that the first capacitor structure 131, the third capacitor structure 133, and the fifth capacitor structure 135 have a flat surface. Figure 5H Square corners or sharp corners are illustrated. However, it should be understood that due to wet etching, the aforementioned sidewalls, corners and / or surfaces may alternatively be curved or rounded.

[0061] Reference Fig.5I, forming a second capacitor structure 132 and a fourth capacitor structure 134 in the second group of trenches 182 and in the second group of lateral recesses 192. By forming the second capacitor structure 132 along the second group of lateral recesses 192, a third group of lateral protrusions 161A to 163A and a fourth group of lateral protrusions 161B to 163B are formed. The third group of lateral protrusions 161A to 163A are interlaced with the second group of lateral protrusions 151B to 154B. The formation of the second capacitor structure 132 and the fourth capacitor structure 134 includes: forming a second external electrode layer 111B on the substrate 101A in the second group of trenches 182 and along the second group of lateral recesses 192; forming a second insulator layer 112B on the second external electrode layer 111B and along the second external electrode layer 111B; and forming a second internal electrode layer 113B on the second insulator layer 112B and along the second insulator layer 112B. Any of the second external electrode layer 111B, the second insulator layer 112B, and the second internal electrode layer 113B may be formed by ALD, CVD, PECVD, or any combination of the foregoing processes. Any of the deposition processes for forming any of the second external electrode layer 111B, the second insulator layer 112B, and the second internal electrode layer 113B may be implemented for a predetermined time to control the thickness of the resulting second external electrode layer 111B, the thickness of the resulting second insulator layer 112B, and / or the thickness of the resulting second internal electrode layer 113B. The second external electrode layer 111B and the second internal electrode layer 113B may be or include titanium, titanium nitride, tantalum, tantalum nitride, any other metal, or any other suitable material. The second insulator layer 112B may include silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide, some other dielectric, or any combination of the foregoing materials. The second external electrode layer 111B and the second internal electrode layer 113B may have a thickness of 50 angstroms to 500 angstroms. The second insulator layer 112B may have a thickness of 10 angstroms to 200 angstroms.

[0062] In some embodiments, after forming the second external electrode layer 111B, the first external electrode layer 111A contacts the second external electrode layer 111B at one or more locations. For example, after forming the second external electrode layer 111B, the first external electrode layer 111A may contact the second external electrode layer 111B along any of the interfaces between the first capacitor structure 131 and the second capacitor structure 132, the interfaces between the second capacitor structure 132 and the third capacitor structure 133, the interfaces between the third capacitor structure 133 and the fourth capacitor structure 134, and the interfaces between the fourth capacitor structure 134 and the fifth capacitor structure 135.

[0063] A cap layer 120 is formed over the second set of cavities 114B. The cap layer 120 may hermetically seal the second set of cavities 114B. The cap layer 120 may include silicon oxide, silicon nitride, or any other dielectric material. The cap layer 120 may have a thickness of 50 angstroms to 1000 angstroms.

[0064] Reference Figure 5J , a fourth mask (not shown) is formed on the semiconductor device 100. Then, the second capacitor structure 132, the fourth capacitor structure 134 and the cap layer 120 are patterned with the fourth mask in place. The patterning forms a second patterned cap layer 120B. The patterning may include any of wet etching or dry etching. In some embodiments, the patterning includes removing the fourth mask after the etching process.

[0065] Reference FIG. 6A to FIG. 6H , providing the formation Figure 3A , Figure 3B and Figure 4 A series of cross-sectional views of some embodiments of a method of manufacturing a semiconductor device 200 are shown. The semiconductor device 200 may be or include an IC, an IPD, or some other semiconductor device.

[0066] Reference Fig. 6A, a dielectric structure 204 is formed on the substrate 201A. The dielectric structure 204 includes a plurality of dielectric layers 202A to 202D or 203A to 203C and a plurality of support layers 201B to 201G. The substrate 201A may be or include silicon, germanium, any III-V compound, or any other suitable semiconductor material. The substrate 201A may have a thickness of 50 angstroms or greater. The plurality of dielectric layers 202A to 202D or 203A to 203C include a first group of dielectric layers 202A to 202D and a second group of dielectric layers 203A to 203C. The first group of dielectric layers 202A to 202D and the second group of dielectric layers 203A to 203C may be formed one on the other in an alternating manner. The first set of dielectric layers 202A to 202D and the second set of dielectric layers 203A to 203C may include silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, or any other suitable dielectric material. The first set of dielectric layers 202A to 202D may include a different material than the second set of dielectric layers 203A to 203C. Each layer in the first set of dielectric layers 202A to 202D and the second set of dielectric layers 203A to 203C may have a thickness of 50 angstroms to 20 microns. The plurality of support layers 201B to 201G may include polysilicon. The plurality of support layers may include the same material as the substrate 201A. The plurality of supporting layers 201B to 201G may be stacked between each of the plurality of dielectric layers 202A to 202D or 203A to 203C, such that each of the plurality of supporting layers 201B to 201G is disposed in a vertical direction between a layer in the first set of dielectric layers 202A to 202D and a layer in the second set of dielectric layers 203A to 203C. For example, the first supporting layer 201B may be disposed in a vertical direction between a first dielectric layer 202A in the first set of dielectric layers 202A to 202D and a second dielectric layer 203A in the second set of dielectric layers 203A to 203C. A top supporting layer 201H is formed over the plurality of dielectric layers 202A to 202D or 203A to 203C. The top supporting layer 201H may be or include polysilicon. The top supporting layer 201H may include the same or different material as the substrate 201A. The top supporting layer 201H may have a thickness of 50 angstroms to 1000 angstroms.

[0067] Reference Figure 6B, a first mask 271 is formed over the dielectric structure 204 and the substrate 201A. The dielectric structure 204 is then patterned with the first mask 271 in place to form a first set of trenches 281. The first mask 271 may include, for example, photoresist, silicon oxide, silicon nitride, some other mask material, or any combination of the foregoing materials. Patterning may include dry etching. In some embodiments, dry etching may utilize CF4 plasma, CHF3 plasma, C4F8 plasma, SF6 plasma, NF3 plasma, or some other plasma to pattern the multiple dielectric layer structures. In some embodiments, dry etching may utilize Cl2 plasma, HBr plasma, Ar plasma, or some other plasma to pattern the multiple support layers 201B to 201H.

[0068] Reference Figure 6C , the dielectric structure 204 is patterned with the first mask 271 in place to form a first set of lateral recesses 291 extending outwardly from the first set of trenches 281. The patterning may include wet etching. The first set of dielectric layers 202A to 202D may be wet etched with high selectivity relative to the second set of dielectric layers 203A to 203C, such that the etchant etches the first set of dielectric layers 202A to 202D faster than the second set of dielectric layers 203A to 203C, thereby forming the first set of lateral recesses 291. The wet etching may utilize HF, H3PO4, TMAH, NH4OH, KOH, NaOH, some other etchant, or any combination of the foregoing materials to selectively etch the dielectric structure to form the first set of lateral recesses 291. The wet etching may be performed for a predetermined time to control the lateral distance that the first set of lateral recesses 291 extend. In some embodiments, a lateral recess in the first group of lateral recesses 291 may be symmetrical about a corresponding groove in the first group of grooves 281, such that a first distance 296 that the first group of lateral recesses 291 extends from the first group of grooves 281 is equal to a second distance 297 that the first group of lateral recesses 291 extends from the first group of grooves 281. In some embodiments, patterning includes removing the first mask 271 after wet etching. Although Figure 6C An example is shown in which the first mask 271 remains in place during the wet etch, but in some alternative embodiments, the first mask 271 may be removed prior to the wet etch.

[0069] In some embodiments, the etching rate of the substrate 201A and the plurality of supporting layers 201B to 201G may be lower than the etching rate of the first dielectric material (e.g., 202A to 202D), so that the wet etchant may also etch the first set of dielectric layers 202A to 202D faster than the substrate 201A and the plurality of supporting layers 201B to 201G. Therefore, the wet etch may not cause the first set of trenches 281 to extend vertically into the substrate 201A or laterally into the plurality of supporting layers 201B to 201G.

[0070] In some embodiments, the sidewalls of the first set of dielectric layers 202A to 202D may be flat after wet etching, such as Figure 6C In addition, the sidewalls, upper surfaces, and lower surfaces of the second set of dielectric layers 203A to 203C and / or the plurality of support layers 201B to 201G may be flat after wet etching, so that the first set of lateral recesses 291 may have a flat surface. Figure 6C Square corners or sharp corners are illustrated. However, it should be understood that due to wet etching, the aforementioned sidewalls, corners and / or surfaces may alternatively be curved or rounded.

[0071] Reference Fig.6D , a second mask 272 is formed over the dielectric structure 204. The dielectric structure 204 is then patterned with the second mask 272 in place to form a second set of trenches 282. The second mask 272 may include, for example, a photoresist, silicon oxide, silicon nitride, some other mask material, or any combination of the foregoing materials. The patterning may include dry etching. In some embodiments, the dry etching may utilize CF4 plasma, CHF3 plasma, C4F8 plasma, SF6 plasma, NF3 plasma, or some other plasma to pattern the dielectric structure 204. In some embodiments, the dry etching may utilize Cl2 plasma, HBr plasma, Ar plasma, or some other plasma to pattern the plurality of support layers 201B to 201G.

[0072] Reference Fig. 6E, the dielectric structure 204 is patterned with the second mask 272 in place to form a second set of lateral recesses 292 extending outwardly from the second set of trenches 282. The patterning may include wet etching. The second set of dielectric layers 203A to 203C may be wet etched with high selectivity relative to the first set of dielectric layers 202A to 202D, such that the etchant etches the second set of dielectric layers 203A to 203C faster than the first set of dielectric layers 202A to 202D, thereby forming the second set of lateral recesses 292. The wet etching may utilize HF, H3PO4, TMAH, NH4OH, KOH, NaOH, some other etchant, or any combination of the foregoing materials to selectively etch the dielectric structure to form the second set of lateral recesses 292. The wet etching may be performed for a predetermined time to control the lateral distance that the second set of lateral recesses 292 extend. In some embodiments, a lateral recess in the second group of lateral recesses 292 may be symmetrical about a corresponding groove in the second group of grooves 282, such that a third distance 298 that the second group of lateral recesses 292 extends from the second group of grooves 282 is equal to a fourth distance 299 that the second group of lateral recesses 292 extends from the second group of grooves 282. In some embodiments, patterning includes removing the second mask 272 after wet etching. Although Fig. 6E An example is shown where the second mask 272 remains in place during the wet etch, but in some alternative embodiments, the second mask 272 may be removed prior to the wet etch.

[0073] In some embodiments, during wet etching, the etching rate of the substrate 201A and the plurality of supporting layers 201B to 201G may be lower than the etching rate of the second dielectric material (e.g., 203A to 203C). Therefore, the wet etching may not cause the second set of trenches 282 to extend vertically into the substrate 201A or laterally into the plurality of supporting layers 201B to 201G.

[0074] In some embodiments, the sidewalls of the second set of dielectric layers 203A to 203C may be flat after wet etching, such as Fig. 6E In addition, the sidewalls, upper surfaces, and lower surfaces of the first set of dielectric layers 202A to 202D and / or the plurality of support layers 201B to 201G may be flat after wet etching, so that the second set of lateral recesses 292 may have a flat surface. Fig. 6E Square corners or sharp corners are illustrated. However, it should be understood that due to wet etching, the aforementioned sidewalls, corners and / or surfaces may alternatively be curved or rounded.

[0075] Reference Fig. 6F, a first capacitor structure 231, a second capacitor structure 232, a third capacitor structure 233, a fourth capacitor structure 234, and a fifth capacitor structure 235 are formed in the first group of grooves 281, in the first group of lateral recesses 291, in the second group of grooves 282, and in the second group of lateral recesses 292. For example, by forming the first capacitor structure 231 along the first group of lateral recesses 291, a first group of lateral protrusions 251A to 254A and a second group of lateral protrusions 251B to 254B are formed. For example, by forming the second capacitor structure 232 along the second group of lateral recesses 292, a third group of lateral protrusions 261A to 263A and a fourth group of lateral protrusions 261B to 263B are formed. In some embodiments, the second group of lateral protrusions 251B to 254B are staggered with the third group of lateral protrusions 261A to 263A.

[0076] The formation of the first capacitor structure 231, the third capacitor structure 233, and the fifth capacitor structure 235 includes: forming a first external electrode layer 211A on the substrate 201A in the first group of trenches 281 and along the first group of lateral recesses 291; forming a first insulator layer 212A on and along the first external electrode layer 211A; and forming a first internal electrode layer 213A on and along the first insulator layer 212A. Any of the first external electrode layer 211A, the first insulator layer 212A, and the first internal electrode layer 213A may be formed by ALD, CVD, PECVD, or any combination of the foregoing processes. Any of the deposition processes for forming any of the first external electrode layer 211A, the first insulator layer 212A, and the first internal electrode layer 213A may be performed for a predetermined time to control the thickness of the resulting first external electrode layer 211A, the thickness of the resulting first insulator layer 212A, and / or the thickness of the resulting first internal electrode layer 213A. The first external electrode layer 211A and the first internal electrode layer 213A may be or include titanium, titanium nitride, tantalum, tantalum nitride, any other metal, or any other suitable material. The first insulator layer 212A may include silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide, some other dielectric, or any combination of the foregoing materials. The first external electrode layer 111A and the first internal electrode layer 113A may have a thickness of 50 angstroms to 500 angstroms. The first insulator layer 112A may have a thickness of 10 angstroms to 200 angstroms.

[0077] The formation of the second capacitor structure 232 and the fourth capacitor structure 234 includes: forming a second external electrode layer 211B on the substrate 201A in the second group of grooves 282 and along the second group of lateral recesses 292; forming a second insulator layer 212B on the second external electrode layer 211B and along the second external electrode layer 211B; and forming a second internal electrode layer 213B on the second insulator layer 212B and along the second insulator layer 212B. Any of the second external electrode layer 211B, the second insulator layer 212B, and the second internal electrode layer 213B can be formed by ALD, CVD, PECVD, or any combination of the foregoing processes. Any of the deposition processes for forming any of the second external electrode layer 211B, the second insulator layer 212B, and the second internal electrode layer 213B can be implemented for a predetermined time to control the thickness of the resulting second external electrode layer 211B, the resulting second insulator layer 212B, and / or the resulting second internal electrode layer 213B. The second outer electrode layer 211B and the second inner electrode layer 213B may be or include titanium, titanium nitride, tantalum, tantalum nitride, any other metal, or any other suitable material. The second insulator layer 212B may include silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, zirconium oxide, some other dielectric, or any combination of the foregoing materials. The second outer electrode layer 211B and the second inner electrode layer 213B may have a thickness of 50 angstroms to 500 angstroms. The second insulator layer 212B may have a thickness of 10 angstroms to 200 angstroms.

[0078] In some embodiments, after forming the first external electrode layer 211A and the second external electrode layer 211B, the first external electrode layer 211A is separated from the second external electrode layer 211B in the lateral direction at one or more locations by the plurality of dielectric layers 202A to 202D or 203A to 203C. In some embodiments, the first external electrode layer 211A is separated from the second external electrode layer 211B in the vertical direction at one or more locations by the plurality of support layers 201B to 201H. For example, after forming the first external electrode layer 211A and the second external electrode layer 211B, the first external electrode layer 211A may be separated from the second external electrode layer 211B by the dielectric structure 204 along any of the interfaces between the first capacitor structure 231 and the second capacitor structure 232, the interfaces between the second capacitor structure 232 and the third capacitor structure 233, the interfaces between the third capacitor structure 233 and the fourth capacitor structure 234, and the interfaces between the fourth capacitor structure 234 and the fifth capacitor structure 235.

[0079] In some embodiments, a cap layer 220 is formed over the first group of cavities 214A and the second group of cavities 214B. The cap layer 220 can hermetically seal the first group of cavities 214A and the second group of cavities 214B. The cap layer 220 can include silicon oxide, silicon nitride, or any other dielectric material. The cap layer 220 can have a thickness of 50 angstroms to 1000 angstroms.

[0080] Reference Figure 6G , a third mask 273 is formed on the cap layer 220. Then, the first capacitor structure 231, the fifth capacitor structure 235 and the cap layer 220 are patterned. The patterning may include any of wet etching or dry etching. In some embodiments, the patterning includes removing the third mask 273 after the etching process.

[0081] Reference Figure 6H , an isolation layer 225 is formed on the upper surface of the cap layer 220 and the upper surface of the top support layer 201H. The isolation layer 225 may be a passivation layer. The isolation layer 225 may include silicon oxide, silicon nitride, or any other dielectric material. The isolation layer 225 may have a thickness of 50 angstroms to 1000 angstroms.

[0082] Reference Figure 7 ,supply FIG. 5A to FIG. 5J Flowcharts of some embodiments of the method.

[0083] At step 1101, a dielectric structure 104 is formed over a substrate 101A. See, e.g. Figure 5A .

[0084] At step 1102, the dielectric structure 104 is patterned using a first etch to form a first set of trenches 181. See, e.g. Figure 5B .

[0085] At step 1103, the dielectric structure 104 is patterned using a second etch to form a first set of lateral recesses 191 in the first set of trenches 181. See, e.g. Figure 5C .

[0086] At step 1104, a first set of capacitor structures 131 or 133 or 135 are formed in the first set of trenches 181 and along the first set of lateral recesses 191. See, e.g. Figure 5D .

[0087] At step 1105, the dielectric structure 104 is patterned using a third etch to form a second set of trenches 182. See, e.g. Figure 5G .

[0088] At step 1106, the dielectric structure 104 is patterned using a fourth etch to form a second set of lateral recesses 192 in the second set of trenches 182. See, e.g. Figure 5H .

[0089] At step 1107, a second set of capacitor structures 132 or 134 are formed in the second set of trenches 182 and along the second set of lateral recesses 192. See, e.g. Fig.5I .

[0090] although Figure 7 The block diagram 1100 is illustrated and described herein as a series of actions or events, but it should be understood that the illustrated order of these actions or events should not be interpreted as having a limiting meaning. For example, certain actions may occur in different orders and / or may occur simultaneously with other actions or events other than the actions or events illustrated and / or described herein. In addition, not all illustrated actions may be required when implementing one or more aspects or embodiments described herein, and one or more of the actions illustrated herein may be performed in one or more separate actions and / or stages.

[0091] Reference Figure 8 ,supply FIG. 6A to FIG. 6H Flowcharts of some embodiments of the method.

[0092] At step 1201, a dielectric structure 204 is formed over a substrate 201A. See, e.g. Fig. 6A .

[0093] At step 1202, the dielectric structure 204 is patterned using a first etch to form a first set of trenches 281. See, e.g. Figure 6B .

[0094] At step 1203, the dielectric structure 204 is patterned using a second etch to form a first set of lateral recesses 291 in the first set of trenches 281. See, e.g. Figure 6C .

[0095] At step 1204, the dielectric structure 204 is patterned using a third etch to form a second set of trenches 282. See, e.g. Fig.6D .

[0096] At step 1205, the dielectric structure 204 is patterned using a fourth etch to form a second set of lateral recesses 292 in the second set of trenches 282. See, e.g. Fig. 6E .

[0097] At step 1206, a first set of capacitor structures 231 or 233 or 235 and a second set of capacitor structures 232 or 234 are formed in the first set of trenches 281, in the second set of trenches 282 along the first set of lateral recesses 291, and along the second set of lateral recesses 292. See, e.g. Fig. 6F .

[0098] although Figure 8 The block diagram 1200 is illustrated and described herein as a series of actions or events, however, it should be understood that the illustrated order of these actions or events should not be interpreted as having a limiting meaning. For example, certain actions may occur in different orders and / or may occur simultaneously with other actions or events other than those illustrated and / or described herein. In addition, not all illustrated actions may be required when implementing one or more aspects or embodiments described herein, and one or more of the actions illustrated herein may be performed in one or more separate actions and / or stages.

[0099] Therefore, in some embodiments, the present disclosure relates to a semiconductor device, the semiconductor device comprising: a semiconductor substrate; a plurality of dielectric layers overlying the semiconductor substrate and defining a trench; and a trench capacitor overlying the semiconductor substrate and filling the trench. The trench comprises a plurality of lateral recesses. The trench capacitor further comprises a first capacitor structure and a second capacitor structure laterally adjacent to the first capacitor structure. The first capacitor structure comprises: a first lateral protrusion extending toward a first lateral recess of the plurality of lateral recesses and filling the first lateral recess; a second lateral protrusion extending toward the second capacitor structure; and a third lateral protrusion extending toward the second capacitor structure. The second capacitor structure comprises: a fourth lateral protrusion extending toward the first capacitor structure and disposed between the second lateral protrusion and the third lateral protrusion in a vertical direction.

[0100] In some embodiments, in the semiconductor device, at least a portion of the second lateral protrusion is located directly above at least a portion of the fourth lateral protrusion, and at least a portion of the third lateral protrusion is located directly below the portion of the fourth lateral protrusion, and wherein the first lateral protrusion and the second lateral protrusion are laterally spaced apart along a common horizontal axis.

[0101] In some embodiments, in the semiconductor device, the lowermost surface of the second lateral protrusion contacts the uppermost surface of the fourth lateral protrusion, and the uppermost surface of the third lateral protrusion contacts the lowermost surface of the fourth lateral protrusion.

[0102] In some embodiments, in the semiconductor device, the lowermost surface of the second lateral protrusion is separated from the uppermost surface of the fourth lateral protrusion in the vertical direction by a first supporting layer, and the uppermost surface of the third lateral protrusion is separated from the lowermost surface of the fourth lateral protrusion in the vertical direction by a second supporting layer.

[0103] In some embodiments, in the semiconductor device, the sidewall of the second lateral protrusion contacts the first sidewall of the second capacitor structure, wherein the sidewall of the third lateral protrusion contacts the second sidewall of the second capacitor structure, and wherein the sidewall of the fourth lateral protrusion contacts the sidewall of the first capacitor structure.

[0104] In some embodiments, in the semiconductor device, the sidewall of the second lateral protrusion is laterally separated from the first sidewall of the second capacitor structure by a first dielectric layer among the multiple dielectric layers, wherein the sidewall of the third lateral protrusion is laterally separated from the second sidewall of the second capacitor structure by a second dielectric layer among the multiple dielectric layers, and wherein the sidewall of the fourth lateral protrusion is laterally separated from the sidewall of the first capacitor structure by a third dielectric layer among the multiple dielectric layers.

[0105] In some embodiments, in the semiconductor device, the trench capacitor also includes a third capacitor structure, which is laterally adjacent to the second capacitor structure so that the third capacitor structure is laterally separated from the first capacitor structure by the second capacitor structure, and wherein the second capacitor structure also includes a fifth lateral protrusion extending toward the third capacitor structure.

[0106] In some embodiments, in the semiconductor device, the third capacitor structure includes: a sixth lateral protrusion extending toward the second capacitor structure; and a seventh lateral protrusion extending toward the second capacitor structure, wherein the fifth lateral protrusion is disposed between the sixth lateral protrusion and the seventh lateral protrusion in a vertical direction.

[0107] In some embodiments, in the semiconductor device, the first lateral protrusion, the second lateral protrusion and the sixth lateral protrusion are laterally spaced apart along a first horizontal axis, the fourth lateral protrusion and the fifth lateral protrusion are laterally spaced apart along a second horizontal axis, and the third lateral protrusion and the seventh lateral protrusion are laterally spaced apart along a third horizontal axis, and wherein the second horizontal axis is located between the first horizontal axis and the third horizontal axis in the vertical direction.

[0108] In some other embodiments, the present disclosure relates to a semiconductor device, the semiconductor device comprising: a semiconductor substrate; a dielectric structure disposed on the semiconductor substrate; and a trench capacitor structure overlying the semiconductor substrate and arranged in the dielectric structure. The trench capacitor structure comprises: a first capacitor structure overlying the semiconductor substrate and disposed in the dielectric structure. The first capacitor structure comprises: a first conductive trunk extending along a first axis perpendicular to the upper surface of the semiconductor substrate; and a plurality of first conductive branches extending outward from the first conductive trunk along a second axis perpendicular to the first axis. The trench capacitor structure also comprises: a second capacitor structure overlying the semiconductor substrate and disposed in the dielectric structure adjacent to the first capacitor structure in the lateral direction. The second capacitor structure comprises: a second conductive trunk extending parallel to the first axis; and a plurality of second conductive branches extending outward from the second conductive trunk parallel to the second axis. The plurality of first conductive branches are interlaced with the plurality of second conductive branches.

[0109] In some embodiments, in the semiconductor device, the dielectric structure includes: a first dielectric layer disposed on the semiconductor substrate, the first dielectric layer containing a first dielectric material; and a second dielectric layer disposed on the first dielectric layer, the second dielectric layer containing a second dielectric material different from the first dielectric material.

[0110] In some embodiments, in the semiconductor device: the first conductive trunk extends along the first axis through the first dielectric layer and the second dielectric layer, and the lowest branch of the first capacitor structure is arranged in the first dielectric layer; and wherein the second conductive trunk extends through the first dielectric layer and the second dielectric layer in parallel with the first conductive trunk, and the lowest branch of the second capacitor structure is arranged in the second dielectric layer.

[0111] In some embodiments, in the semiconductor device, sidewalls of the plurality of first conductive branches contact sidewalls of the second conductive trunk, and sidewalls of the plurality of second conductive branches contact sidewalls of the first conductive trunk.

[0112] In some embodiments, in the semiconductor device, the side walls of the multiple first conductive branches are laterally separated from the side walls of the second conductive trunk by the dielectric structure, and wherein the side walls of the multiple second conductive branches are laterally separated from the side walls of the first conductive trunk by the dielectric structure.

[0113] In some embodiments, in the semiconductor device, lower surfaces of the plurality of first conductive branches contact upper surfaces of the plurality of second conductive branches, and wherein upper surfaces of the plurality of first conductive branches contact lower surfaces of the plurality of second conductive branches.

[0114] In some embodiments, in the semiconductor device, the lower surfaces of the multiple first conductive branches are separated from the upper surfaces of the multiple second conductive branches in the vertical direction by multiple supporting layers, and wherein the upper surfaces of the multiple first conductive branches are separated from the lower surfaces of the multiple second conductive branches in the vertical direction by the multiple supporting layers.

[0115] In some embodiments, in the semiconductor device, the trench capacitor structure also includes: a third capacitor structure overlying the semiconductor substrate and laterally disposed within the dielectric structure adjacent to the second capacitor structure, the third capacitor structure including: a third conductive trunk extending parallel to the first axis; and a plurality of third conductive branches extending outward from the third conductive trunk and perpendicular to the first axis, wherein the plurality of second conductive branches are staggered with the plurality of third conductive branches.

[0116] In some other embodiments, the present disclosure relates to a method for forming a semiconductor device. A dielectric structure including a plurality of dielectric layers is formed on a semiconductor substrate. The dielectric structure is patterned using a first etch to form a first group of grooves. The dielectric structure is patterned using a second etch to form a first group of lateral recesses extending outward from the first group of grooves in the first group of grooves. A first group of capacitor structures is formed in the first group of grooves and along the first group of lateral recesses. The first group of capacitor structures includes a first group of lateral protrusions extending outward from the first group of capacitor structures and filling the first group of lateral recesses. The dielectric structure is patterned using a third etch to form a second group of grooves. The dielectric structure is patterned using a fourth etch to form a second group of lateral recesses extending outward from the second group of grooves in the second group of grooves. A second group of capacitor structures is formed in the second group of grooves and along the second group of lateral recesses. The second group of capacitor structures includes a second group of lateral protrusions extending outward from the second group of capacitor structures and filling the second group of lateral recesses.

[0117] In some embodiments, in the method, the first group of capacitor structures are formed before the third etch and the second group of capacitor structures are formed after the fourth etch.

[0118] In some embodiments, in the method, the first group of capacitor structures and the second group of capacitor structures are formed simultaneously after the fourth etch.

[0119] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art will understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to implement the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art will also recognize that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the present disclosure.

Claims

1. A semiconductor device, comprising: Semiconductor substrate; a plurality of dielectric layers overlying the semiconductor substrate and defining trenches, wherein the trenches include a plurality of lateral recesses; as well as A trench capacitor overlying the semiconductor substrate and filling the trench, wherein the trench capacitor comprises a first capacitor structure and a second capacitor structure laterally adjacent to the first capacitor structure, wherein the first capacitor structure comprises: a first lateral protrusion extending toward a first lateral recess among the plurality of lateral recesses and filling the first lateral recess; a second lateral protrusion extending toward the second capacitor structure; and a third lateral protrusion extending toward the second capacitor structure, and wherein the second capacitor structure comprises: a fourth lateral protrusion extending toward the first capacitor structure and disposed between the second lateral protrusion and the third lateral protrusion in a vertical direction, The second lateral protrusion directly contacts the second capacitor structure.

2. The semiconductor device of claim 1 , wherein at least a portion of the second lateral protrusion is located directly above at least a portion of the fourth lateral protrusion, and at least a portion of the third lateral protrusion is located directly below the portion of the fourth lateral protrusion, and wherein the first lateral protrusion and the second lateral protrusion are spaced apart in the laterally direction along a common horizontal axis. 3 . The semiconductor device according to claim 1 , wherein a lowermost surface of the second lateral protrusion contacts an uppermost surface of the fourth lateral protrusion, and wherein an uppermost surface of the third lateral protrusion contacts a lowermost surface of the fourth lateral protrusion.

4. The semiconductor device according to claim 1, wherein a sidewall of the second lateral protrusion contacts a first sidewall of the second capacitor structure, wherein a sidewall of the third lateral protrusion contacts a second sidewall of the second capacitor structure, and wherein a sidewall of the fourth lateral protrusion contacts a sidewall of the first capacitor structure.

5. The semiconductor device of claim 1 , wherein the trench capacitor further comprises a third capacitor structure, the third capacitor structure being laterally adjacent to the second capacitor structure such that the third capacitor structure is laterally separated from the first capacitor structure by the second capacitor structure, and wherein the second capacitor structure further comprises a fifth lateral protrusion extending toward the third capacitor structure.

6. The semiconductor device according to claim 5, wherein the third capacitor structure comprises: a sixth lateral protrusion extending toward the second capacitor structure; and a seventh lateral protrusion extending toward the second capacitor structure, wherein the fifth lateral protrusion is disposed between the sixth lateral protrusion and the seventh lateral protrusion in a vertical direction.

7. The semiconductor device according to claim 6, wherein the first lateral protrusion, the second lateral protrusion and the sixth lateral protrusion are laterally spaced apart along a first horizontal axis, the fourth lateral protrusion and the fifth lateral protrusion are laterally spaced apart along a second horizontal axis, and the third lateral protrusion and the seventh lateral protrusion are laterally spaced apart along a third horizontal axis, and wherein the second horizontal axis is located between the first horizontal axis and the third horizontal axis in a vertical direction.

8. The semiconductor device of claim 1 , wherein the plurality of dielectric layers comprises a first dielectric layer, a second dielectric layer, and a third dielectric layer, wherein the first dielectric layer and the third dielectric layer comprise a first dielectric and the second dielectric layer comprises a second dielectric different from the first dielectric, and wherein the first lateral recess is defined by an upper surface of the second dielectric layer and sidewalls of the first dielectric layer that are offset from sidewalls of the second dielectric layer. 9 . The semiconductor device of claim 8 , wherein the first cavity extends along the first conductive trunk and the plurality of first conductive branches, and wherein the second cavity extends along the second conductive trunk and the plurality of second conductive branches.

10. A semiconductor device comprising: Semiconductor substrate; a dielectric structure disposed on the semiconductor substrate; as well as A trench capacitor structure overlying the semiconductor substrate and disposed within the dielectric structure, the trench capacitor structure comprising: a first capacitor structure, overlying the semiconductor substrate and disposed within the dielectric structure, the first capacitor structure comprising: a first conductive trunk extending along a first axis perpendicular to an upper surface of the semiconductor substrate; and a plurality of first conductive branches extending outward from the first conductive trunk and perpendicular to the first axis; and A second capacitor structure overlying the semiconductor substrate and disposed within the dielectric structure laterally adjacent to the first capacitor structure, the second capacitor structure comprising: A second conductive trunk extending parallel to the first axis; and a plurality of second conductive branches extending outward from the second conductive trunk and perpendicular to the first axis, wherein the plurality of first conductive branches are staggered with the plurality of second conductive branches, The sidewalls of the plurality of first conductive branches contact the sidewalls of the second conductive trunk line.

11. The semiconductor device according to claim 10, wherein the dielectric structure comprises: A first dielectric layer, disposed on the semiconductor substrate, wherein the first dielectric layer comprises a first dielectric material; as well as The second dielectric layer is disposed on the first dielectric layer, and the second dielectric layer comprises a second dielectric material different from the first dielectric material.

12. The semiconductor device according to claim 11: wherein the first conductive trunk extends along the first axis through the first dielectric layer and the second dielectric layer, and the lowest branch of the first capacitor structure is disposed in the first dielectric layer; and The second conductive trunk extends parallel to the first conductive trunk through the first dielectric layer and the second dielectric layer, and the lowest branch of the second capacitor structure is disposed in the second dielectric layer. 13 . The semiconductor device according to claim 10 , wherein sidewalls of the plurality of second conductive branches contact sidewalls of the first conductive trunk. 14 . The semiconductor device according to claim 10 , wherein lower surfaces of the plurality of first conductive branches contact upper surfaces of the plurality of second conductive branches, and wherein upper surfaces of the plurality of first conductive branches contact lower surfaces of the plurality of second conductive branches.

15. The semiconductor device according to claim 10, wherein the trench capacitor structure further comprises: A third capacitor structure is overlying the semiconductor substrate and is disposed in the dielectric structure adjacent to the second capacitor structure in a laterally direction, the third capacitor structure comprising: a third conductive trunk extending parallel to the first axis; and a plurality of third conductive branches extending outward from the third conductive trunk and perpendicular to the first axis, wherein the plurality of second conductive branches are staggered with the plurality of third conductive branches.

16. A method of forming a semiconductor device, comprising: forming a dielectric structure including a plurality of dielectric layers over a semiconductor substrate; patterning the dielectric structure using a first etch to form a first set of trenches; patterning the dielectric structure using a second etch to form a first set of lateral recesses in the first set of trenches extending outwardly from the first set of trenches; forming a first set of capacitor structures in the first set of trenches and along the first set of lateral recesses, wherein the first set of capacitor structures includes a first set of lateral protrusions extending outwardly from the first set of capacitor structures and filling the first set of lateral recesses; patterning the dielectric structure using a third etch to form a second set of trenches; patterning the dielectric structure using a fourth etch to form a second set of lateral recesses in the second set of trenches extending outwardly from the second set of trenches; as well as forming a second set of capacitor structures in the second set of trenches and along the second set of lateral recesses, wherein the second set of capacitor structures includes a second set of lateral protrusions extending outwardly from the second set of capacitor structures and filling the second set of lateral recesses, The first group of capacitor structures is formed before the third etch and the second group of capacitor structures is formed after the fourth etch.

17. A semiconductor device comprising: a plurality of dielectric layers over the substrate; a trench in the plurality of dielectric layers; a first capacitor structure in the trench; a second capacitor structure in the trench and adjacent to the first capacitor structure; as well as a third capacitor structure in the trench and adjacent to the second capacitor structure, wherein the second capacitor structure is laterally disposed between the first capacitor structure and the third capacitor structure; wherein the first capacitor structure includes a first lateral protrusion disposed at a first height and protruding laterally toward the second capacitor structure, wherein the third capacitor structure includes a second lateral protrusion disposed at the first height and protruding laterally toward the second capacitor structure, wherein the second capacitor structure includes a third lateral protrusion disposed at a second height and protruding laterally toward the first capacitor structure, and wherein the second capacitor structure includes a fourth lateral protrusion disposed at the second height and protruding laterally toward the third capacitor structure, and The first lateral protrusion directly contacts the second capacitor structure.

18. The semiconductor device of claim 17, wherein the plurality of dielectric layers include a first dielectric layer disposed at the first height and a second dielectric layer disposed at the second height, wherein the first dielectric layer includes a first dielectric, and the second dielectric layer includes a second dielectric different from the first dielectric.

19. The semiconductor device of claim 18, wherein the trench is at least partially defined by sidewalls of the first dielectric layer and sidewalls of the second dielectric layer, wherein the sidewalls of the first dielectric layer are laterally offset from the sidewalls of the second dielectric layer, and wherein the trench includes a lateral recess at least partially defined by the sidewalls of the first dielectric layer and a lower surface of the second dielectric layer. 20 . The semiconductor device of claim 19 , wherein the first capacitor structure further comprises a fifth lateral protrusion disposed at the first height and extending laterally away from the first lateral protrusion and into the lateral recess.

21. The semiconductor device according to claim 19, wherein the first capacitor structure comprises a first external electrode layer extending along the first lateral protrusion, a first insulator layer within the first external electrode layer, and a first internal electrode layer within the first insulator layer, wherein the second capacitor structure comprises a second outer electrode layer, a second insulator layer within the second outer electrode layer and a second inner electrode layer within the second insulator layer, extending along the third lateral protrusion and the fourth lateral protrusion, wherein the third capacitor structure comprises a third external electrode layer extending along the second lateral protrusion, a third insulator layer within the third external electrode layer, and a third internal electrode layer within the third insulator layer, and wherein the first external electrode layer contacts the second external electrode layer at the first lateral protrusion and the third lateral protrusion, and wherein the third external electrode layer contacts the second external electrode layer at the second lateral protrusion and the fourth lateral protrusion.

Images