半导体装置制造用片及半导体装置制造用片的制造方法

By employing a composite release film structure and slit design in semiconductor device manufacturing wafers, the problem of winding marks has been solved, manufacturing precision and stability have been improved, and costs have been reduced.

CN113451195BActive Publication Date: 2026-07-17LINTEC CORP

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
LINTEC CORP
Filing Date
2021-03-26
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In the semiconductor device manufacturing process, semiconductor chips with film-like adhesives are prone to winding marks when wound into rolls, which can lead to misalignment and inaccurate positioning during manufacturing.

Method used

A composite release film structure with sequentially stacked release film, second adhesive layer and supporting substrate is adopted to ensure that the thickness of the composite release film is greater than 38μm, and a cut is formed on the release film to control the cut depth and prevent the overlap of steps caused by the difference in layer thickness.

Benefits of technology

It effectively suppresses the generation of winding marks, improves the precision and stability of the semiconductor device manufacturing process, and reduces manufacturing costs.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN113451195B_ABST
    Figure CN113451195B_ABST
Patent Text Reader

Abstract

本发明涉及半导体装置制造用片,其具备基材、第一粘着剂层、膜状粘合剂、剥离膜、第二粘着剂层及支撑基材,且通过在所述基材上依次层叠所述第一粘着剂层、所述膜状粘合剂、所述剥离膜、所述第二粘着剂层及所述支撑基材而构成,并且具有依次层叠有所述剥离膜、所述第二粘着剂层及所述支撑基材的结构的复合剥离膜的厚度大于38μm。
Need to check novelty before this filing date? Find Prior Art