Display device

Abstract

A display device is provided, including: a substrate including a display region, a first non-display region, and a second non-display region, the display region including a plurality of thin film transistors and a plurality of display elements electrically connected to the plurality of thin film transistors, the first non-display region being outside the display region, the second non-display region being at least partially surrounded by the display region; a through portion passing through the substrate in a vertical direction in the second non-display region; a metal layer surrounding the through portion at the second non-display region; and a hydrophobic barrier layer on an inner side surface of the through portion. The hydrophobic barrier layer includes an oxide of a metal material of the metal layer.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0048303, filed on April 21, 2020, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] One or more example embodiments relate to a display device. Background Technology

[0003] Recently, physical buttons have been removed from the front surface of display devices, and the display area on which images are displayed has been gradually extended (e.g., enlarged or expanded). For example, to extend the display area, display devices have been introduced in which separate components (such as cameras) for extending the functionality of the display device are arranged inside the display area. To arrange separate components such as cameras inside the display area, recesses and / or through-holes can be formed to position the separate components inside the display area. However, recesses or through-holes formed inside the display area may serve as another moisture transmission path through which external moisture may penetrate into the display area.

[0004] The information disclosed in this background section is intended to enhance the understanding of the background art of this disclosure, and therefore may contain information that does not constitute prior art. Summary of the Invention

[0005] One or more exemplary embodiments of this disclosure relate to a display device and a method of manufacturing the display device, which blocks or substantially blocks the penetration of external moisture or the like due to through-portions within the display area.

[0006] Other aspects will be set forth in part in the description which follows, and in part will be apparent from the description, or may be learned by practicing one or more of the embodiments presented in this disclosure.

[0007] According to one or more embodiments of this disclosure, a display device includes: a substrate including a display region, a first non-display region, and a second non-display region; the display region including a plurality of thin-film transistors and a plurality of display elements electrically connected to the plurality of thin-film transistors; the first non-display region being outside the display region; and the second non-display region being at least partially surrounded by the display region; a through portion extending vertically through the substrate in the second non-display region; a metal layer surrounding the through portion in the second non-display region; and a hydrophobic barrier layer on an inner surface of the through portion. The hydrophobic barrier layer comprises an oxide of the metallic material of the metal layer.

[0008] In an example embodiment, the hydrophobic barrier layer may be integrated with the metal layer.

[0009] In an example embodiment, the metal layer may include at least one of indium, zinc, gallium, zirconium, copper, and titanium.

[0010] In an example embodiment, the substrate may include a first substrate layer, a first barrier layer, a second substrate layer, and a second barrier layer stacked sequentially, and the hydrophobic barrier layer may cover the side surface of the second substrate layer exposed through a through portion.

[0011] In an example embodiment, the hydrophobic barrier layer may include nanostructures, which include pores in the internal portion and surface of the hydrophobic barrier layer.

[0012] In an example embodiment, the display device may further include a surfactant layer on a hydrophobic barrier layer, and the surfactant layer may include at least one of stearic acid, oleic acid and fluorosilane.

[0013] In an example embodiment, the surfactant in the surfactant layer can fill the pores.

[0014] In an example embodiment, the display device may further include an inner dam surrounding the through portion at a second non-display area, and a metal layer may be located between the inner dam and the through portion.

[0015] In an example embodiment, the display device may further include an encapsulation layer on a plurality of display elements and comprising a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked sequentially. The organic encapsulation layer may be located outside the region divided by the inner dam, the first and second inorganic encapsulation layers may extend to the through portion and may be in direct contact with each other between the inner dam and the through portion, and a metal layer may be on the second inorganic encapsulation layer.

[0016] In an example embodiment, each of the plurality of display elements may include a pixel electrode, a counter electrode, and an intermediate layer. The pixel electrode may be on a planarization layer, the counter electrode may be on top of the pixel electrode, and the intermediate layer may be between the pixel electrode and the counter electrode. At least one of the intermediate layer and the counter electrode may extend into a second non-display area, and a hydrophobic barrier layer may cover the exposed side surfaces of the through portions of at least one of the intermediate layer and the counter electrode. Attached Figure Description

[0017] The above and other aspects and features of this disclosure will become more apparent to those skilled in the art from the following detailed description of exemplary embodiments with reference to the accompanying drawings, in which:

[0018] Figure 1 This is a plan view of an example display device according to an embodiment;

[0019] Figure 2 It is according to the embodiment along Figure 1A cross-sectional view of the display device taken by lines I-I' and II-II';

[0020] Figure 3 According to the embodiments Figure 1 An enlarged plan view of region A;

[0021] Figure 4 According to the embodiments Figure 3 A floor plan of an example of the through section;

[0022] Figure 5 It is according to the embodiment along Figure 4 A cross-sectional view of the through section cut by line III-III';

[0023] Figure 6 According to the embodiments Figure 5 An enlarged sectional view of region B;

[0024] Figure 7 According to another embodiment, along Figure 4 A cross-sectional view of the continuous portion intercepted by line III-III'; and

[0025] Figures 8 to 10 This illustrates the manufacturing process according to an embodiment. Figure 1 A cross-sectional view of the manufacturing process of the display device. Detailed Implementation

[0026] In the following description, exemplary embodiments will be illustrated in more detail with reference to the accompanying drawings, in which the same reference numerals throughout denote the same elements. However, this disclosure may be implemented in a variety of different ways and should not be construed as being limited to the embodiments shown herein. Rather, these embodiments are provided as examples so that this disclosure will be thorough and complete, and these embodiments will fully convey to those skilled in the art the aspects and features of this disclosure. Therefore, processes, elements, and techniques that are not essential for a person of ordinary skill in the art to fully understand the aspects and features of this disclosure may not be described. Furthermore, when an embodiment can be implemented differently, the specific sequence of processes may be performed in a different order than that described. For example, two consecutively described processes may be performed simultaneously or substantially simultaneously, or may be performed in the reverse order of their description. Unless otherwise stated, the same reference numerals denote the same elements throughout the drawings and written description, and therefore their description need not be repeated.

[0027] In the accompanying drawings, for clarity, the relative dimensions of elements, layers, and regions may be exaggerated and / or simplified. In other words, because the dimensions and thicknesses of the components in the drawings are arbitrarily shown for ease of explanation, the following embodiments are not limited thereto. For ease of explanation, spatial relative terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., may be used herein to describe the relationship between one element or feature as shown in the drawings and another (additional) element or feature. It will be understood that spatial relative terms are intended to include different orientations of the device in use or operation other than those depicted in the drawings. For example, if the device in the drawings is flipped, an element described as “below” or “below” or “below” other elements or features will then be positioned “above” said other elements or features. Thus, the example terms “below” and “below” can encompass both above and below orientations. The device may be otherwise positioned (e.g., rotated 90 degrees or in other orientations), and the spatial relative descriptive terms used herein should be interpreted accordingly.

[0028] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Therefore, without departing from the spirit and scope of this disclosure, the first element, first component, first region, first layer, or first portion described below may be designated as a second element, second component, second region, second layer, or second portion.

[0029] It will be understood that when an element or layer is referred to as being "on," "connected to," or "bonded to" another element or layer, the element or layer may be directly on, directly connected to, or directly bonded to the other element or layer, or there may be one or more intermediate elements or layers. Additionally, it will be understood that when an element or layer is referred to as being "between" two elements or layers, the element or layer may be the only element or layer between the two elements or layers, or there may be one or more intermediate elements or layers.

[0030] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting of this disclosure. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” as used herein are also intended to include the plural forms. It will also be understood that when the terms “comprising,” “including,” “having,” and variations thereof are used in this specification, they indicate the presence of the stated features, integrals, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. When a statement such as “at least one of…” follows a list of elements, it modifies the entire list of elements without modifying any individual elements within the list. For example, the statement “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0031] As used herein, the terms “substantially,” “approximately,” and similar terms are used as approximate terms rather than as terms of degree and are intended to account for inherent biases in measured or calculated values ​​that will be recognized by one of ordinary skill in the art. Furthermore, the use of “may” when describing embodiments of this disclosure indicates “one or more embodiments of this disclosure.” As used herein, the terms “use” and variations thereof may be considered synonymous with the terms “utilize” and variations thereof, respectively. Additionally, the term “exemplary” is intended to indicate an example or illustration.

[0032] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will also be understood that terms (such as those defined in a general dictionary) shall be interpreted as having the same meaning as they have in the relevant field and / or the context of this specification, and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0033] Figure 1 This is a plan view of an example of the display device 10 according to an embodiment. Figure 2 It is along Figure 1 The cross-sectional view of the display device 10 taken by lines I-I' and II-II'.

[0034] Reference Figure 1 and Figure 2According to an embodiment, the display device 10 includes a display area DA, a first non-display area PA1, and a second non-display area PA2. The display area DA displays an image, the first non-display area PA1 is outside the display area DA, and at least a portion of the second non-display area PA2 is surrounded by the display area DA (e.g., surrounded by the display area DA on its periphery). In other words, the substrate 100 can be understood to include the display area DA, the first non-display area PA1, and the second non-display area PA2.

[0035] Display elements are arranged at the display area DA (e.g., in or on the display area DA). The first non-display area PA1 may include a pad (or "soldering pad") area, which is an area in which various suitable electronic components and / or printed circuit boards are electrically attached.

[0036] Furthermore, the thin-film transistor 210 can be disposed at the display area DA (e.g., in or on the display area DA). The thin-film transistor 210 can be electrically connected to the display element. Figure 2 The diagram shows an organic light-emitting diode (OLED) 300 arranged as a display element at a display area DA (e.g., in or on the display area DA). When the OLED 300 is electrically connected to the thin-film transistor 210, the pixel electrode 310 of the OLED 300 is electrically connected to the thin-film transistor 210.

[0037] The second non-display area PA2 may be at least partially surrounded by the display area DA (e.g., surrounded by the periphery of the display area DA), and is arranged between the display area DA and the through portion (e.g., through hole) H. Although in Figure 1 The diagram shows that a second non-display area PA2 can be arranged within (e.g., inside) the display area DA and completely surrounded by (e.g., surrounded by) the display area DA, but this disclosure is not limited thereto. For example, a portion of the second non-display area PA2 can contact the first non-display area PA1.

[0038] The through portion (e.g., a through hole) H can be used as space for a separate component performing a portion of the functions of the display device 10, or as space for a separate component to which new functions can be added to the display device 10. For example, sensors, light sources, and / or camera modules can be arranged in the through portion H (e.g., they can be located in or positioned in the through portion H). However, this disclosure is not limited to a single through portion H; in some embodiments, two or more through portions H can be provided.

[0039] Because the through portion H is a region that vertically penetrates the substrate 100 and the multiple layers stacked on the substrate 100, external moisture and / or oxygen may permeate into the display device 10 through the inner vertical surface (e.g., inner vertical wall) exposed by the through portion H. However, according to an embodiment, because the hydrophobic barrier layer 800 (e.g., see...) Figure 5 The hydrophobic barrier layer 800 is formed on the inner surface of the through portion H, thus effectively preventing or substantially reducing moisture transport. The hydrophobic barrier layer 800 is described in more detail below (e.g., see...). Figure 5 The following is a reference first. Figure 2 The structure of the display device 10 will be described in more detail.

[0040] The substrate 100 may comprise a variety of suitable materials. In a bottom-emitting display device in which an image is displayed in a direction toward the substrate 100, the substrate 100 may comprise a transparent material. Conversely, in a top-emitting display device in which an image is displayed in the opposite direction away from the substrate 100, the substrate 100 may not comprise a transparent material. In this example, the substrate 100 may comprise a metal. In examples where the substrate 100 comprises a metal, the substrate 100 may comprise at least one of iron, chromium, manganese, nickel, titanium, molybdenum, stainless steel, stainless steel for use (SUS), invar alloy, inconel alloy, and kovar alloy.

[0041] For example, the substrate 100 may have a multilayer structure in which a first substrate layer 101, a first barrier layer 102, a second substrate layer 103, and a second barrier layer 104 are sequentially stacked.

[0042] The first substrate layer 101 and the second substrate layer 103 may include, for example, a transparent glass material comprising SiO2 as a main component. However, the first substrate layer 101 and the second substrate layer 103 are not necessarily limited to this and may include, for example, a transparent plastic material. The plastic material may include polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC), and / or cellulose acetate propionate (CAP), etc.

[0043] The first substrate layer 101 and the second substrate layer 103 may have the same thickness or different thicknesses. For example, the first substrate layer 101 and the second substrate layer 103 may both comprise polyimide and may both have a thickness of about 3 μm to about 20 μm.

[0044] The first barrier layer 102 and the second barrier layer 104 are layers configured to prevent or substantially prevent external foreign matter from penetrating into the display device 10 through the substrate 100, and may include inorganic materials (e.g., silicon nitride (SiN)). x ) and / or silicon dioxide (SiO2) x Examples include single-layer or multi-layer structures. For instance, the first barrier layer 102 may have a multi-layer structure including an amorphous silicon layer and a silicon oxide layer to improve adhesion between adjacent layers (e.g., between adjacent layers), and the second barrier layer 104 may include a silicon oxide layer. Furthermore, both the first barrier layer 102 and the second barrier layer 104 may have approximately... to approximately The thickness, but this disclosure is not limited thereto.

[0045] A buffer layer may be further disposed on the substrate 100. The buffer layer can block or substantially block foreign matter and / or moisture from penetrating the substrate 100. For example, the buffer layer may comprise inorganic or organic materials. Inorganic materials may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, and / or titanium nitride, etc., while organic materials may include polyimide, polyester, and / or acrylic, etc. The buffer layer may comprise multiple stacks comprising one or more of the above materials. In embodiments, the second barrier layer 104 of the substrate 100 can be understood as part of a buffer layer having a multilayer structure.

[0046] Thin-film transistor 210 is disposed at display region DA of substrate 100 (e.g., in or on display region DA). In addition to thin-film transistor 210, display elements are disposed at display region DA (e.g., in or on display region DA) such that the display elements are electrically connected to thin-film transistor 210. Figure 2 An organic light-emitting diode 300 is shown as a display element. A thin-film transistor may also be disposed at a first non-display area PA1 (e.g., in or on the first non-display area PA1). The thin-film transistor disposed at the first non-display area PA1 (e.g., in or on the first non-display area PA1) may include, for example, part of a circuitry configured to control electrical signals applied to the display area DA.

[0047] The thin-film transistor 210 includes a semiconductor layer 211, a gate electrode 213, a source electrode 215, and a drain electrode 217. The semiconductor layer 211 includes amorphous silicon, polycrystalline silicon, or an organic semiconductor material. In an example where a buffer layer is disposed on the substrate 100, the semiconductor layer 211 may be disposed on the buffer layer.

[0048] A gate electrode 213 is disposed on the semiconductor layer 211. A source electrode 215 is electrically connected to a drain electrode 217 according to a signal applied to the gate electrode 213. The gate electrode 213 may include at least one of, for example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), and may have a single-layer or multi-layer structure. In this example, to ensure insulation between the semiconductor layer 211 and the gate electrode 213, a first inorganic insulating layer 120 may be disposed between the semiconductor layer 211 and the gate electrode 213. The first inorganic insulating layer 120 may include an inorganic material, such as silicon oxide, silicon nitride, or silicon oxynitride. The first inorganic insulating layer 120 may be formed over the display area DA, the first non-display area PA1, and the second non-display area PA2.

[0049] The second inorganic insulating layer 130 can be disposed on the gate electrode 213 and can have a single-layer structure or a multi-layer structure. The second inorganic insulating layer 130 can include inorganic materials, such as silicon oxide, silicon nitride, or silicon oxynitride. The second inorganic insulating layer 130 can be formed throughout the display area DA, the first non-display area PA1, and the second non-display area PA2.

[0050] Source electrode 215 and drain electrode 217 are disposed on the second inorganic insulating layer 130. Both source electrode 215 and drain electrode 217 are connected to semiconductor layer 211 through contact holes formed in the second inorganic insulating layer 130 and the first inorganic insulating layer 120. Source electrode 215 and drain electrode 217 may be made of at least one of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) depending on suitable conductivity, and may each have a single-layer structure or a multilayer structure.

[0051] A protective layer can be provided to protect the thin-film transistor 210 having the above structure. The protective layer may include, for example, inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride. The protective layer may have a single-layer structure or a multi-layer structure.

[0052] The planarization layer 140 can be disposed on the thin-film transistor 210. For example, as Figure 2As shown, in an example where the organic light-emitting diode 300 is positioned higher than the thin-film transistor 210, the planarization layer 140 can planarize or substantially planarize any bending (e.g., steps) that might be caused by the thin-film transistor 210 by covering it. The planarization layer 140 may comprise an organic insulating material, such as acrylic, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO). Although in Figure 2 The planarization layer 140 is shown to have a single-layer structure, but this disclosure is not limited thereto. In some examples, the planarization layer 140 may have a multi-layer structure and may be modified in various suitable ways. The display device 10 according to this embodiment may include both a protective layer and a planarization layer 140, or may include only the planarization layer 140 as needed or desired.

[0053] An organic light-emitting diode (OLED) 300 is disposed on a planarization layer 140 within the display area DA. The OLED 300 includes a pixel electrode 310, a counter electrode 330, and an intermediate layer 320. The intermediate layer 320 is disposed between the pixel electrode 310 and the counter electrode 330, and may include an emission layer.

[0054] The planarization layer 140 includes an opening that exposes at least one of the source electrode 215 and the drain electrode 217 of the thin-film transistor 210. The pixel electrode 310 is disposed on the planarization layer 140 and is electrically connected to the thin-film transistor 210 via the opening by contacting one of the source electrode 215 and the drain electrode 217.

[0055] Pixel electrode 310 may include a transparent (or semi-transparent) electrode or a reflective electrode. In an example where pixel electrode 310 includes a transparent (or semi-transparent) electrode, pixel electrode 310 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In an example where pixel electrode 310 includes a reflective electrode, pixel electrode 310 may include a reflective layer and a layer comprising, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO), and the reflective layer may include, for example, at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and mixtures thereof. However, this disclosure is not limited thereto, and pixel electrode 310 may include various suitable materials, and its structure may have a single layer or multiple layers, but various suitable modifications may be made thereto.

[0056] The pixel defining layer 150 can be disposed on the planarization layer 140. The pixel defining layer 150 defines pixels by including an opening corresponding to each sub-pixel (e.g., an opening that exposes at least the central portion of the pixel electrode 310). Additionally, in Figure 2 In the example shown, the pixel defining layer 150 prevents or substantially prevents arcing (e.g., arcing or arc discharge) at the edge of the pixel electrode 310 by increasing the distance between the edge of the pixel electrode 310 and the edge of the counter electrode 330 above the pixel electrode 310. The pixel defining layer 150 may include an organic insulating material, such as polyimide or HMDSO.

[0057] The intermediate layer 320 of the organic light-emitting diode 300 includes an emission layer. The emission layer may include a polymeric organic material or a low-molecular-weight organic material for emitting light with a desired color (e.g., a preset color). Additionally, the intermediate layer 320 may include at least one functional layer selected from a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL), and an electron injection layer (EIL). The functional layer may include an organic material. Some of the multiple layers of the intermediate layer 320 (e.g., the functional layers) may be integrally formed across the multiple organic light-emitting diodes 300 (e.g., formed as a uniform and continuous body / layer).

[0058] The counter electrode 330 may cover the display area DA. The counter electrode 330 may be formed integrally (e.g., formed as a uniform and continuous body / layer) across multiple organic light-emitting diodes 300 to correspond to multiple pixel electrodes 310. The counter electrode 330 may include a transparent (or semi-transparent) electrode or a reflective electrode. In an example where the counter electrode 330 includes a transparent (or semi-transparent) electrode, the counter electrode 330 may include a layer comprising a metal and a transparent (or semi-transparent) conductive layer, the metal having a low work function (e.g., Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and / or mixtures thereof), and the transparent (or semi-transparent) conductive layer comprising, for example, ITO, IZO, ZnO, or In2O3. In an example where the counter electrode 330 includes a reflective electrode, the counter electrode 330 may include a layer comprising at least one of Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and mixtures thereof. The construction and materials of the counter electrode 330 are not limited thereto and various modifications may be made as needed or desired.

[0059] To enable the display device 10 to display an image, a preset electrical signal (e.g., a pre-defined or pre-defined electrical signal) can be applied to the counter electrode 330. For example, a voltage line 420 can be arranged at the first non-display area PA1 (e.g., in or on the first non-display area PA1) and can transmit the preset electrical signal to the counter electrode 330. The voltage line 420 may include a common voltage line.

[0060] Voltage lines 420 may comprise the same or substantially the same material as the various conductive layers, and are formed concurrently (e.g., simultaneously) with the formation of the various conductive layers. Figure 2 The diagram illustrates source electrodes 215 and drain electrodes 217 arranged on a second inorganic insulating layer 130, similar to those of a thin-film transistor 210 within the display region DA. Voltage lines 420 can be arranged on the second inorganic insulating layer 130 at a first non-display region PA1 (e.g., within or on the first non-display region PA1). In this example, while the source electrodes 215 and drain electrodes 217 of the thin-film transistor 210 within the display region DA are formed on the second inorganic insulating layer 130, voltage lines 420 can be formed on the second inorganic insulating layer 130 at the first non-display region PA1 (e.g., within or on the first non-display region PA1) using the same or substantially the same material as the source electrodes 215 and drain electrodes 217. Therefore, voltage lines 420 can have the same or substantially the same structure as the source electrodes 215 and drain electrodes 217. However, this disclosure is not limited thereto. For example, while forming the gate electrode 213, the voltage line 420 can be formed concurrently (e.g., simultaneously) on the first inorganic insulating layer 120 using the same or substantially the same material as the gate electrode 213. However, this disclosure is not limited thereto, and various suitable modifications can be made as needed or desired.

[0061] In some embodiments, the counter electrode 330 may directly contact the voltage line 420, or as... Figure 2 As shown, the counter electrode 330 can be electrically connected to the voltage line 420 via the protective conductive layer 421. The protective conductive layer 421 can be disposed on the planarization layer 140 and can extend over and be electrically connected to the voltage line 420. Therefore, the counter electrode 330 can contact the protective conductive layer 421 at the first non-display area PA1 (e.g., in or on the first non-display area PA1), and the protective conductive layer 421 can contact the voltage line 420 at the first non-display area PA1 (e.g., in or on the first non-display area PA1).

[0062] Because the protective conductive layer 421 can be as follows Figure 2As shown, the protective conductive layer 421 is arranged on the planarization layer 140, so it can be formed concurrently (e.g., simultaneously) with the elements arranged on the planarization layer 140 within the display area DA using the same or substantially the same material. For example, while the pixel electrode 310 is formed on the planarization layer 140 within the display area DA, the protective conductive layer 421 can be formed on the planarization layer 140 at the first non-display area PA1 (e.g., in or on the first non-display area PA1) using the same or substantially the same material as the pixel electrode 310. Therefore, the protective conductive layer 421 can have the same or substantially the same structure as the pixel electrode 310. Figure 2 As shown, the protective conductive layer 421 can cover the portion of the voltage line 420 that is exposed due to not being covered by the planarization layer 140. This configuration prevents, or substantially prevents, damage to the portion of the voltage line 420 exposed to the outside of the planarization layer 140 during the process of forming the first limiting dam (e.g., a first protrusion or a first limiting barrier) 610 or the second limiting dam (e.g., a second protrusion or a second limiting barrier) 620.

[0063] To prevent, or substantially prevent, impurities such as external oxygen and / or moisture from penetrating into the display area DA through the planarization layer 140, such as Figure 2 As shown, the planarization layer 140 may include an opening 140b in the first non-display area PA1. The opening 140b may surround the display area DA (e.g., around the periphery of the display area DA). Additionally, the protective conductive layer 421 may fill the opening 140b while forming the protective conductive layer 421. With this configuration, impurities that have penetrated into the planarization layer 140 at the first non-display area PA1 (e.g., in or on the first non-display area PA1) can be effectively prevented from penetrating into the planarization layer 140 inside the display area DA.

[0064] A capping layer 160 may be disposed on the counter electrode 330. The capping layer 160 can improve the efficiency of light generated from the organic light-emitting diode 300. The capping layer 160 covers the counter electrode 330 and may extend outside the counter electrode 330 (e.g., beyond the counter electrode 330) to contact the protective conductive layer 421 disposed beneath the counter electrode 330. Because the counter electrode 330 covers the display area DA and extends outside the display area DA, the capping layer 160 also covers the display area DA and extends to a first non-display area PA1 outside the display area DA. The capping layer 160 may include an organic material.

[0065] As described above, the capping layer 160 improves the efficiency of light generated from the organic light-emitting diode 300. For example, the capping layer 160 can improve light extraction efficiency externally. In some embodiments, the efficiency improvement caused by the capping layer 160 can be uniformly achieved within the display area DA. In this example, considering the desired improvement in light efficiency, the capping layer 160 may have a top surface corresponding to the curvature (e.g., step) of the top surface of the layer beneath it. In other words, as... Figure 2 As shown, the top surface of the capping layer 160 may have a shape corresponding to the curvature (e.g., step) of the top surface of the counter electrode 330 at the portion of the capping layer 160 disposed on the counter electrode 330 (e.g., in the portion of the capping layer 160 disposed on the counter electrode 330).

[0066] An encapsulation layer 500 is disposed on the capping layer 160. The encapsulation layer 500 protects the organic light-emitting diode 300 from external moisture and / or oxygen. For this purpose, the encapsulation layer 500 has a shape that covers the display area DA in which the organic light-emitting diode 300 is disposed and extends to a first non-display area PA1 outside the display area DA. The encapsulation layer 500 may have a multilayer structure. For example, as... Figure 2 As shown, the encapsulation layer 500 may include a first inorganic encapsulation layer 510, an organic encapsulation layer 520, and a second inorganic encapsulation layer 530.

[0067] The first inorganic encapsulation layer 510 covers the capping layer 160 and may include silicon oxide, silicon nitride, and / or silicon oxynitride.

[0068] Because the first inorganic encapsulation layer 510 is formed along the structure beneath it, the top surface of the first inorganic encapsulation layer 510 can be as follows: Figure 2 The surface shown is not flat. The organic encapsulation layer 520 covers the first inorganic encapsulation layer 510 and has sufficient thickness so that the top surface of the organic encapsulation layer 520 can be flat or substantially flat throughout the entire display area DA. The organic encapsulation layer 520 may include, for example, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate and / or polyacrylic acid, etc.) or suitable combinations thereof.

[0069] The second inorganic encapsulation layer 530 may cover the organic encapsulation layer 520 and may include, for example, silicon oxide, silicon nitride, and / or silicon oxynitride. The second inorganic encapsulation layer 530 may prevent or substantially prevent the organic encapsulation layer 520 from being exposed to the outside by extending outside (e.g., beyond) the organic encapsulation layer 520 and contacting the first inorganic encapsulation layer 510. For example, the second inorganic encapsulation layer 530 may contact the first inorganic encapsulation layer 510 at a first non-display area PA1 (e.g., in or on the first non-display area PA1).

[0070] Because the encapsulation layer 500 includes a first inorganic encapsulation layer 510, an organic encapsulation layer 520, and a second inorganic encapsulation layer 530, even if a crack occurs within the encapsulation layer 500, the multilayer structure prevents the crack from connecting between the first inorganic encapsulation layer 510 and the organic encapsulation layer 520 or between the organic encapsulation layer 520 and the second inorganic encapsulation layer 530 (e.g., it will not extend between the first inorganic encapsulation layer 510 and the organic encapsulation layer 520 or between the organic encapsulation layer 520 and the second inorganic encapsulation layer 530). This construction prevents or reduces the formation of pathways through which external moisture and / or oxygen permeate into the display area DA.

[0071] During the process of forming the encapsulation layer 500, one or more underlying structures may be damaged. For example, the first inorganic encapsulation layer 510 can be formed using chemical vapor deposition. While the first inorganic encapsulation layer 510 is being formed using chemical vapor deposition, layers beneath it (e.g., layers directly beneath it) may be damaged. Therefore, when the first inorganic encapsulation layer 510 is formed directly on the capping layer 160, the capping layer 160, configured to improve the efficiency of light generated from the organic light-emitting diode 300, may be damaged, and the light efficiency of the display device 10 may be reduced or degraded. Therefore, to prevent or substantially prevent damage to the capping layer 160 during the process of forming the encapsulation layer 500, a protective layer 170 may be disposed between the capping layer 160 and the encapsulation layer 500. For example, the protective layer 170 may include LiF.

[0072] As described above, the cover layer 160 extends over the display area DA to a first non-display area PA1 outside the display area DA. Therefore, the protective layer 170 can extend outside the cover layer 160 (e.g., beyond the cover layer 160) such that the cover layer 160 does not directly contact the encapsulation layer 500. In this example, the protective layer 170 covers the end 160a of the cover layer 160, and the end 170a of the protective layer 170 is disposed on the planarization layer 140. For example, as... Figure 2 As shown, the end 170a of the protective layer 170 directly contacts the protective conductive layer 421 on the planarization layer 140.

[0073] Because the first inorganic encapsulation layer 510, which is the bottommost layer of the encapsulation layer 500, does not contact the capping layer 160, which includes organic materials, but does contact the protective layer 170, which includes inorganic materials such as LiF, the adhesive force between the encapsulation layer 500 and the layer below it can be maintained or substantially maintained at a high level. With this configuration, peeling of the encapsulation layer 500 from the layer below it can be effectively prevented or reduced during the manufacturing process of the display device 10 or during use after manufacturing.

[0074] When forming the encapsulation layer 500, for example, when forming the organic encapsulation layer 520, it is desirable to limit the material used to form the organic encapsulation layer 520, such that the material used to form the organic encapsulation layer 520 is arranged within a predetermined area (e.g., within a preset area). For this purpose, such as Figure 2 As shown, the first limiting dam 610 may be arranged at the first non-display area PA1 (e.g., in or on the first non-display area PA1). For example, as Figure 2 As shown, the first inorganic insulating layer 120, the second inorganic insulating layer 130, and the planarization layer 140 may be disposed at the display area DA (e.g., in or on the display area DA) and also at the first non-display area PA1 (e.g., in or on the first non-display area PA1). The first limiting dam 610 is arranged at the first non-display area PA1 (e.g., in or on the first non-display area PA1) to be spaced apart from the planarization layer 140.

[0075] The first limiting dam 610 may have a multi-layer structure. For example, the first limiting dam 610 may include a first layer 611 and a second layer 613 stacked in a direction away from the substrate 100 (e.g., the z-direction). The first layer 611 may be formed concurrently (e.g., simultaneously) with the planarization layer 140 using the same or substantially the same material as the material formed at the display area DA (e.g., in or on the display area DA). The second layer 613 may be formed concurrently (e.g., simultaneously) with the pixel defining layer 150 using the same or substantially the same material as the material formed at the display area DA (e.g., in or on the display area DA).

[0076] like Figure 2As shown, in addition to the first limiting dam 610, a second limiting dam 620 may be disposed between the first limiting dam 610 and the end 140a of the planarization layer 140. The second limiting dam 620 may be disposed on a portion of the protective conductive layer 421 on the voltage line 420. The second limiting dam 620 is disposed at the first non-display area PA1 (e.g., in or on the first non-display area PA1) to be spaced apart from the planarization layer 140. Similar to the first limiting dam 610, the second limiting dam 620 may have a multilayer structure, but this disclosure is not limited thereto, and as... Figure 2 As shown, the second limiting dam 620 may have a single-layer structure. For example, the second limiting dam 620 may include fewer layers than the first limiting dam 610, so as to have a lower height than the first limiting dam 610, which is measured from the base 100. Figure 2 The diagram shows that the second limiting dam 620 comprises the same or substantially the same material as the second layer 613 of the first limiting dam 610, and is formed concurrently (e.g., simultaneously) with the second layer 613.

[0077] Because the organic encapsulation layer 520 is constrained by the second limiting dam 620 (e.g., restricted by the second limiting dam 620), overflow of material used to form the organic encapsulation layer 520 to the outside of the second limiting dam 620 can be prevented or substantially reduced during the process of forming the organic encapsulation layer 520. Even when material used to form the organic encapsulation layer 520 partially overflows the second limiting dam 620, the position of the material is constrained by the first limiting dam 610 (e.g., restricted by the first limiting dam 610) and will not flow in the direction toward the edge 100a of the substrate 100 (e.g., the x-direction) (e.g., it may no longer move in the direction toward the edge 100a of the substrate 100). Instead, as Figure 2 As shown, the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530, which can be formed by chemical vapor deposition, can cover the second limiting dam 620 and the first limiting dam 610, and can extend to the outside of the first limiting dam 610 (e.g., can extend beyond the first limiting dam 610).

[0078] like Figure 2As shown, the crack-prevention portion 630 is disposed at the first non-display area PA1 (e.g., in or on the first non-display area PA1). The crack-prevention portion 630 may extend along at least a portion of the edge 100a of the substrate 100. For example, the crack-prevention portion 630 may have a shape that surrounds the display area DA once (e.g., extends once around the periphery of the display area DA). The crack-prevention portion 630 may have a discontinuous shape in some portions. For example, in some portions, the crack-prevention portion 630 may include portions spaced apart from each other along the periphery of the display area DA. The crack-prevention portion 630 may prevent or substantially prevent cracks from propagating to the display area DA (e.g., extending into or forming in the display area DA). Cracks may be generated in the first inorganic insulating layer 120 and the second inorganic insulating layer 130 during the manufacturing process of the display device 10, while cutting the mother substrate, by pulses and / or vibrations, or during use of the display device 10. The first inorganic insulating layer 120 and the second inorganic insulating layer 130 may both include inorganic materials.

[0079] The crack-resistant part 630 can have various suitable shapes. For example... Figure 2 As shown, the anti-crack portion 630 can be formed concurrently (e.g., simultaneously) with some elements formed at the display area DA using the same or substantially the same material as those formed at the display area DA (e.g., in or on the display area DA), and can have a multi-layer structure. Figure 2 The diagram shows that the crack-resistant portion 630 has a multi-layer structure including a bottom layer 630' and a top layer 630" on the bottom layer 630'. For example, in Figure 2 The diagram shows that the crack-resistant portion 630 includes a bottom layer 630' and a top layer 630"; the bottom layer 630' includes a material that is the same as or substantially the same as the material of the first inorganic insulating layer 120, and the top layer 630" includes a material that is the same as or substantially the same as the material of the second inorganic insulating layer 130 on the first inorganic insulating layer 120. In an example where a buffer layer is formed on the substrate 100, the crack-resistant portion 630 may include a layer comprising a material that is the same as or substantially the same as the material of the buffer layer. Additionally, as... Figure 2 As shown, in some embodiments, the crack-resistant portion 630 may include a plurality of crack-resistant portions spaced apart from each other.

[0080] In some embodiments, the crack-resistant portion 630 can be formed by removing a portion of the first inorganic insulating layer 120 and the second inorganic insulating layer 130. In other words, as... Figure 2As shown, the crack-resistant portion 630 may include a groove and the remaining portions of a first inorganic insulating layer 120 and a second inorganic insulating layer 130 adjacent to (e.g., adjacent to) the groove. The groove can be formed in at least one side of the crack-resistant portion 630 by removing the first inorganic insulating layer 120 and the second inorganic insulating layer 130.

[0081] like Figure 2 As shown, the crack-resistant portion 630 may be covered by a cover layer 650. While forming the planarization layer 140 at the display area DA (e.g., in or on the display area DA), the cover layer 650 may be formed concurrently (e.g., simultaneously) with the planarization layer 140 using the same or substantially the same material as the planarization layer 140. In other words, the cover layer 650 may include a layer comprising an organic material that covers the crack-resistant portion 630 comprising an inorganic material. The cover layer 650 may cover the ends of the first inorganic insulating layer 120 and / or the second inorganic insulating layer 130 in the direction along the edge 100a of the substrate 100, and also cover the crack-resistant portion 630.

[0082] Figure 3 yes Figure 1 An enlarged plan view of region A. Figure 4 yes Figure 3 A plan view of an example of the through section H. Figure 5 It is along Figure 4 A cross-sectional view of an example section taken by line III-III'. Figure 6 yes Figure 5 An enlarged sectional view of region B. Figure 7 It is along Figure 4 Another example of a cross-sectional view of the section cut by line III-III'.

[0083] Figure 3 The through portion H and the surrounding area of ​​the through portion H are shown. (Refer to...) Figure 3 Multiple organic light-emitting diodes (OLEDs) 300 are arranged around the through-port H (e.g., around the periphery of the through-port H) at the display area DA (e.g., in or on the display area DA), and the multiple OLEDs 300 are electrically connected to corresponding data lines DL. A second non-display area PA2 can be defined as an area in which no image is displayed, and is located between the through-port H and the display area DA.

[0084] The data cable DL can extend in the first direction and be electrically connected to the data driver 1100. For example, the data driver 1100 can be arranged as a chip-on-panel (COP) type driver in the first non-display area PA1 (e.g., see...). Figure 1(e.g., in or on the first non-display area PA1), or may be arranged in an electrical connection to the location provided in the first non-display area PA1 (e.g., see...). Figure 1 On the flexible circuit board of the terminal at (e.g., in or on the first non-display area PA1).

[0085] Because of the through portion H arranged in the display area DA, some data lines DL extending in the first direction are not formed in a straight line shape in the first direction. In this example, some data lines DL may extend around the through portion H (e.g., may surround a row around the through portion H). In this example, some data lines DL extending around the through portion H (e.g., surround a row around the through portion H) are arranged in a second non-display area PA2 surrounding the through portion H (e.g., around the periphery of the through portion H) (e.g., in or on the second non-display area PA2).

[0086] The scan lines may extend in a second direction intersecting the data lines DL, and some scan lines may extend around the through portion H (e.g., around a row around the through portion H) at the region where the through portion H is formed (e.g., the second non-display region PA2) (e.g., in the region where the through portion H is formed (e.g., the second non-display region PA2) or on the region where the through portion H is formed (e.g., the second non-display region PA2)). In another example, the display device 10 (e.g., see...) Figure 1 The scan lines can be prevented from extending around the through portion H (e.g., from circling around the through portion H) by including two scan drivers on two opposite sides of the display area DA. In other words, the scan lines of the organic light-emitting diode 300 electrically connected to the left side of the through portion H and the scan lines of the organic light-emitting diode 300 electrically connected to the right side of the through portion H can be connected to different scan drivers.

[0087] The through section H is shown in more detail. Figure 4 and Figure 5 The metal layer M may be disposed around the through portion H that vertically penetrates the substrate 100 (e.g., around the periphery of the through portion H), and the metal layer M may surround the through portion H (e.g., around the periphery of the through portion H). The metal layer M may include at least one of, for example, indium, zinc, gallium, zirconium, copper, and titanium, and may have a thickness similar to (e.g., the same or substantially the same as) the thickness of the second substrate layer 103. For example, the metal layer M may have a thickness of about 3 μm to about 20 μm.

[0088] The first inorganic insulating layer 120 and the second inorganic insulating layer 130 may extend to a portion of the second non-display area PA2, and the ends of the first inorganic insulating layer 120 and the second inorganic insulating layer 130 may be covered by the planarization layer 140.

[0089] The inner dam 730 may be disposed at a location spaced apart from the planarization layer 140 at a second non-display area PA2 (e.g., within or on the second non-display area PA2). The inner dam 730 may surround the through portion H (e.g., around the periphery of the through portion H) and may include, for example, a bottom layer 732 and a top layer 734. The bottom layer 732 may be formed concurrently (e.g., simultaneously) with the same or substantially the same material as the planarization layer 140 during the formation of the planarization layer 140, and the top layer 734 may be formed concurrently (e.g., simultaneously) with the same or substantially the same material as the pixel defining layer 150 during the formation of the pixel defining layer 150. The inner dam 730 may be performed in accordance with reference to... Figure 2 The first limiting dam 610 described (e.g., see...) Figure 2 ) and the second limiting dam 620 (for example, see Figure 2 The functions are the same or substantially the same. Therefore, because the inner dam 730 prevents or substantially prevents the material used to form the organic encapsulation layer 520 from flowing toward the through portion H during the process of forming the organic encapsulation layer 520, the organic encapsulation layer 520 can be arranged outside the area divided by the inner dam 730. The first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 can extend beyond the inner dam 730 to the through portion H.

[0090] The hydrophobic barrier layer 800 can be disposed on the inner surface of the through portion H. When the through portion H is formed by cutting the substrate 100 by laser irradiation, the hydrophobic barrier layer 800 can be formed simultaneously with the laser cutting of the metal layer M.

[0091] When the through portion H is formed, the metal layer M is partially melted by laser irradiation, flows along the side surface of the through portion H, and recrystallizes. Therefore, the metal particles dispersed from the metal layer M are oxidized and aggregated, and then deposited on the side surface of the through portion H to form a hydrophobic barrier layer 800. Thus, the hydrophobic barrier layer 800 is integrally formed with the metal layer M (e.g., formed as a uniform and continuous body / layer), but may include oxides of the metallic material of the metal layer M.

[0092] Furthermore, clusters of aggregated metal particles are irregularly redeposited on the side surface of the through portion H. Therefore, the hydrophobic barrier layer 800 constitutes a nanostructure with a complex shape, which includes pores (e.g., valleys) V both inside and on its surface (e.g., within or on its surface). Because the hydrophobic barrier layer 800 includes pores V within its interior, the hydrophobic barrier layer 800 can be hydrophobic.

[0093] The hydrophobic barrier layer 800 is formed to have a width greater than the thickness of the metal layer M. The hydrophobic barrier layer 800 is formed during the laser irradiation process by melting and recrystallizing the metal layer M and by redepositing clusters of dispersed metal particles. For example, the width of the hydrophobic barrier layer 800 in the length direction of the through portion H can be two or more times the thickness of the metal layer M. Because the thickness of the metal layer M can be the same as or substantially the same as the thickness of the second substrate layer 103 (e.g., similar), the hydrophobic barrier layer 800 formed from the metal layer M can at least cover the side surfaces of the second substrate layer 103 and the side surfaces of the intermediate layer 320, counter electrode 330, capping layer 160, and protective layer 170 disposed on the metal layer M and exposed by the through portion H.

[0094] Because moisture and other substances may be difficult to introduce into the display device 10 through the first substrate layer 101 (for example, see...). Figure 1 Therefore, the hydrophobic barrier layer 800 may not completely cover the first substrate layer 101. Furthermore, as described above, since at least some functional layers of the intermediate layer 320 are integrally formed across the plurality of organic light-emitting diodes 300 (e.g., formed as a uniform and continuous body / layer), the intermediate layer 320 formed at the second non-display region PA2 (e.g., in or on the second non-display region PA2) represents these functional layers other than the emission layer.

[0095] As described above, because the hydrophobic barrier layer 800 is formed on the side surface of the through portion H and covers the side surfaces of the second substrate layer 103, intermediate layer 320, counter electrode 330, capping layer 160, and protective layer 170 exposed by the through portion H, it can block or substantially block moisture and the like introduced into the through portion H from flowing into the display device 10 through these layers (for example, see...). Figure 1 ).

[0096] In the comparative example, a plurality of grooves spaced apart from each other around the through portion H are formed in the depth direction of the substrate 100, and the intermediate layer 320 is interrupted by the grooves and formed discontinuously. Therefore, moisture transmission caused by the through portion H is prevented or substantially reduced. However, to improve the moisture transmission prevention effect, many (e.g., a large number) grooves should be formed, thus potentially increasing the area of ​​the second non-display area PA2. For example, in the comparative example, to form twenty grooves around the through portion H, the area where the grooves are arranged requires a length of approximately 300 μm. Conversely, when the hydrophobic barrier layer 800 according to one or more embodiments of the present disclosure is formed on the side surface of the through portion H, the area of ​​the second non-display area PA2 can be reduced, thus relatively lengthening (e.g., expanding or increasing) the display area DA (e.g., see...). Figure 1 ).

[0097] In addition, such as Figure 6 As shown, in some embodiments, a surfactant layer 900 may be further formed on the inner surface of the through portion H. The surfactant layer 900 can be formed by coating a surfactant onto the hydrophobic barrier layer 800. The surfactant of the surfactant layer 900 may include at least one of, for example, stearic acid, oleic acid, and fluorosilanes. The surfactant may be coated on the surface of the hydrophobic barrier layer 800 and may fill the pores V inside the hydrophobic barrier layer 800. In this example, the hydrophilic head of the surfactant binds to the hydrophobic barrier layer 800, which includes a metal oxide, and the hydrophobicity of the hydrophobic barrier layer 800 can be further enhanced by the hydrophobic tail of the surfactant.

[0098] although Figure 6 An example is shown in which the metal layer M is arranged on the substrate 100, but this disclosure is not limited thereto, and the position of the metal layer M can be modified in various ways. For example, as Figure 7 As shown, the metal layer M can be disposed on the second inorganic encapsulation layer 530 of the encapsulation layer 500. The metal layer M can be formed to have the same or substantially the same (or similar) thickness as the second substrate layer 103. The sum of the thickness of the intermediate layer 320 between the metal layer M and the second substrate layer 103, and the thicknesses of the counter electrode 330, capping layer 160, protective layer 170, first inorganic encapsulation layer 510, and second inorganic encapsulation layer 530, can be much smaller than the thickness of the second substrate layer 103. Therefore, when the metal layer M is disposed on the second inorganic encapsulation layer 530, the hydrophobic barrier layer 800 can be formed to cover the second substrate layer 103 because the hydrophobic barrier layer 800 can be formed in the direction along which the laser irradiation occurs. For another example, the metal layer M can be disposed at various suitable locations, such as between the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530.

[0099] Figures 8 to 10 It shows the manufacturing process. Figure 1 A cross-sectional view of the process of the display device 10, and showing the process along... Figure 1 The cross section taken by line I-I' and along Figure 4 The cross section taken from line III-III'.

[0100] First, refer to Figure 8 A thin-film transistor 210 and a planarization layer 140 are formed on a substrate 100, the planarization layer 140 covering the thin-film transistor 210. For example, the thin-film transistor 210 may be arranged at a display area DA (e.g., in or on the display area DA), and the planarization layer 140 may extend to a portion of a second non-display area PA2.

[0101] The thin-film transistor 210 includes a semiconductor layer 211, a gate electrode 213, a source electrode 215, and a drain electrode 217. A first inorganic insulating layer 120 comprising an inorganic material is formed between the semiconductor layer 211 and the gate electrode 213. Additionally, a second inorganic insulating layer 130 comprising an inorganic material is formed between the gate electrode 213 and the source electrode 215, and between the gate electrode 213 and the drain electrode 217. The first inorganic insulating layer 120 and the second inorganic insulating layer 130 may extend over the display area DA and the first non-display area PA1 (e.g., see...). Figure 1 Formation. In the second non-display area PA2, a portion of the first inorganic insulating layer 120 and the second inorganic insulating layer 130 is removed, and the ends of the first inorganic insulating layer 120 and the second inorganic insulating layer 130 may be covered by the planarization layer 140.

[0102] Subsequently, an opening is formed in the planarization layer 140, exposing the drain electrode 217. A pixel electrode 310 is formed on the planarization layer 140. The pixel electrode 310 can be formed by forming a metal material for forming the pixel electrode 310 on the substrate 100 and then patterning the metal material. The pixel electrode 310 can contact the drain electrode 217 through the opening.

[0103] When the planarization layer 140 is formed, the underlayer 732 may be formed concurrently (e.g., simultaneously) at the second non-display area PA2 (e.g., in or on the second non-display area PA2). The underlayer 732 may have a closed curved shape.

[0104] Additionally, a metal layer M is formed at the second non-display area PA2 (e.g., in or on the second non-display area PA2). For example, the metal layer M can be formed on the substrate 100 in the area formed by the bottom layer 732 (e.g., in or on the area formed by the bottom layer 732). However, this disclosure is not limited thereto. For example, in another embodiment, when forming... Figure 7 Following the encapsulation layer 500 shown, a metal layer M can be formed on the second inorganic encapsulation layer 530. In other words, the metal layer M can be formed at various suitable locations.

[0105] The metal layer M may include at least one of indium, zinc, gallium, zirconium, copper and titanium, and may have a thickness of about 3 μm to about 20 μm.

[0106] Subsequently, as Figure 9 As shown, a pixel defining layer 150 is formed on the pixel electrode 310. The pixel defining layer 150 may cover the edge of the pixel electrode 310 and may include an opening that exposes the central portion of the pixel electrode 310. During the process of forming the pixel defining layer 150, a top layer 734 is formed concurrently (e.g., simultaneously) on the bottom layer 732, so that an inner dam 730 may be formed at the second non-display area PA2 (e.g., in or on the second non-display area PA2).

[0107] An organic light-emitting diode 300 is formed by stacking an intermediate layer 320 and a counter electrode 330 on the portion of the pixel electrode 310 exposed through the opening of the pixel defining layer 150. In this example, at least one functional layer of the intermediate layer 320 may be formed integrally over the display area DA and the second non-display area PA2 (e.g., formed as a uniform and continuous body / layer). Additionally, the counter electrode 330, the capping layer 160 on the counter electrode 330, and the protective layer 170 may also be formed integrally over the display area DA and the second non-display area PA2 (e.g., formed as a uniform and continuous body / layer).

[0108] Next, as Figure 10 As shown, a first inorganic encapsulation layer 510, an organic encapsulation layer 520, and a second inorganic encapsulation layer 530 are sequentially formed, and then a through-portion H is formed inside the second non-display area PA2 by irradiation with laser L. The through-portion H is formed inside the region of the metal layer M, and the through-portion H has a smaller dimension (e.g., width) than the dimension (e.g., width) of the metal layer M. Therefore, after the through-portion H is formed, the metal layer M is arranged between the inner dam 730 and the through-portion H.

[0109] The first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 are formed not only at the display area DA (e.g., in or on the display area DA) but also at the second non-display area PA2 (e.g., in or on the second non-display area PA2). Conversely, the area where the organic encapsulation layer 520 is formed is confined by the inner dam 730 (e.g., constrained by the inner dam 730). Therefore, at the second non-display area PA2 (e.g., in or on the second non-display area PA2), the first inorganic encapsulation layer 510 can directly contact the second inorganic encapsulation layer 530 between the inner dam 730 and the through portion H.

[0110] Because the through-portion H vertically penetrates the substrate 100 and the metal layer M, intermediate layer 320, counter electrode 330, capping layer 160, protective layer 170, first inorganic encapsulation layer 510, and second inorganic encapsulation layer 530 stacked on the substrate 100, the side surfaces of these layers can be exposed through the inner surface of the through-portion H. Among them, the exposed surfaces of the second substrate layer 103, intermediate layer 320, and capping layer 160, all of which include organic materials, may be used for the permeation of moisture, etc., into the display device 10 (e.g., see...). Figure 1 The permeation path in the region is obstructed. However, a hydrophobic barrier layer 800, formed by the metal layer M through laser L irradiation, is formed on the inner surface of the through portion H and covers at least the side surfaces of the second substrate layer 103, intermediate layer 320, counter electrode 330, capping layer 160, and protective layer 170. Therefore, the hydrophobic barrier layer 800 can effectively block or substantially block moisture transmission and can reduce the area of ​​the second non-display area PA2.

[0111] Because the hydrophobic barrier layer 800 is formed by partially melting and recrystallizing the metal layer M via laser L and redepositing clusters of dispersed metal particles, the hydrophobic barrier layer 800 is integral with the metal layer M, comprising an oxide of the metallic material of the metal layer M, and having pores V (e.g., see...). Figure 6 The complex shape of the nanostructure. Therefore, the hydrophobic barrier layer 800 can be hydrophobic. Additionally, as mentioned above, because the surfactant layer 900 (e.g., see...) Figure 6 It can be further formed on the hydrophobic barrier layer 800, so the hydrophobicity of the hydrophobic barrier layer 800 can be further enhanced, and the hydrophobic barrier layer 800 can more effectively block the moisture transmission caused by the through part H.

[0112] According to one or more exemplary embodiments of the present disclosure, in a display device, because a hydrophobic barrier layer is formed on the inner surface of a through portion in which a separate component such as a camera is arranged, the size or area of ​​the non-display area can be reduced, and the penetration of moisture, etc., caused by the through portion can be blocked or substantially reduced.

[0113] Although some exemplary embodiments have been described, it will be readily apparent to those skilled in the art that various modifications can be made to the exemplary embodiments without departing from the spirit and scope of this disclosure. It will be understood that, unless otherwise described, the description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Therefore, it will be apparent to those skilled in the art that, unless specifically stated otherwise, features, characteristics, and / or elements described in connection with specific embodiments can be used alone or in combination with features, characteristics, and / or elements described in connection with other embodiments. Therefore, it will be understood that the foregoing is illustrative of various exemplary embodiments and is not to be construed as limiting to the specific exemplary embodiments disclosed herein, and various modifications to the disclosed exemplary embodiments and other exemplary embodiments are intended to be included within the spirit and scope of this disclosure as defined in the appended claims and their equivalents.

Claims

1. A display device, the display device comprising: The substrate includes: a display area including a plurality of thin-film transistors and a plurality of display elements electrically connected to the plurality of thin-film transistors; a first non-display area located outside the display area; and a second non-display area at least partially surrounded by the display area; The through portion extends vertically through the substrate in the second non-display area; A metal layer, surrounding the through portion and located only in the second non-display area; and A hydrophobic barrier layer is located on the inner surface of the through portion. The hydrophobic barrier layer comprises an oxide of the metal material of the metal layer.

2. The display device according to claim 1, wherein, The hydrophobic barrier layer is integral with the metal layer.

3. The display device according to claim 1, wherein, The metal layer includes at least one of indium, zinc, gallium, zirconium, copper, and titanium.

4. The display device according to claim 1, wherein, The substrate comprises a first matrix layer, a first barrier layer, a second matrix layer, and a second barrier layer stacked sequentially, and The hydrophobic barrier layer covers the side surface of the second substrate layer exposed through the through portion.

5. The display device according to claim 1, wherein, The hydrophobic barrier layer includes a nanostructure, which includes pores located in the internal portion and on the surface of the hydrophobic barrier layer.

6. The display device according to claim 5, further comprising a surfactant layer located on the hydrophobic barrier layer, in, The surfactant layer includes at least one of stearic acid, oleic acid, and fluorosilane.

7. The display device according to claim 6, wherein, The surfactant in the surfactant layer fills the pores.

8. The display device according to claim 1, further comprising an inner dam surrounding the through portion at the second non-display area. in, The metal layer is located between the inner dam and the through section.

9. The display device according to claim 8, further comprising an encapsulation layer, the encapsulation layer being located on the plurality of display elements and comprising a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked. in: The organic encapsulation layer is located outside the region divided by the inner dam. The first inorganic encapsulation layer and the second inorganic encapsulation layer extend to the through portion and are in direct contact with each other between the inner dam and the through portion. The metal layer is located on the second inorganic encapsulation layer.

10. The display device according to claim 1, wherein, Each of the plurality of display elements includes a pixel electrode, a counter electrode, and an intermediate layer. in: The pixel electrode is located on the planarization layer, the counter electrode is located above the pixel electrode, and the intermediate layer is located between the pixel electrode and the counter electrode. At least one of the intermediate layer and the counter electrode extends into the second non-display area, and The hydrophobic barrier layer covers the side surface of at least one of the intermediate layer and the counter electrode that is exposed by the through portion.

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