Organic light emitting display device and method for manufacturing the same

Abstract

An organic light-emitting display device and a manufacturing method thereof are disclosed, wherein an anode electrode, an organic light-emitting layer, a cathode electrode, and an auxiliary electrode connected to the cathode electrode are provided in an active region of a substrate, and a signal pad and a first pad electrode connected to the signal pad are provided in a pad region of the substrate. The auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode connected to the first auxiliary electrode through a contact hole, and the first pad electrode is formed of the same material as that of the first auxiliary electrode.

Description

[0001] This application is a divisional application of the invention patent application with the application date of November 18, 2015, application number 201510796677.5, and invention name "Organic light-emitting display device and manufacturing method thereof".

[0002] This application claims the benefit of Korean Patent Application No. 10-2015-0075397, filed on May 28, 2015, which is hereby incorporated by reference as if fully set forth herein. Technical Field

[0003] The present invention relates to an organic light emitting display device, and in particular to a top emission type organic light emitting display device and a manufacturing method thereof. Background Art

[0004] The organic light emitting display device is a self-luminous device and has low power consumption, fast response time, high light emitting efficiency, high brightness, and a wide viewing angle.

[0005] Organic light-emitting display devices are classified into top emission type and bottom emission type according to the transmission direction of light emitted from the organic light-emitting device. In the bottom emission type, a circuit element is provided between the light-emitting layer and the image display surface, and for this reason, the aperture ratio is reduced. On the other hand, in the top emission type, no circuit element is provided between the light-emitting layer and the image display surface, and thus the aperture ratio is improved.

[0006] Figure 1 is a schematic cross-sectional view of a top emission type organic light emitting display device of the related art.

[0007] like Figure 1 As shown in the figure, a thin film transistor (TFT) layer T is formed in the active area AA on the substrate 10, and a passivation layer 20 and a planarization layer 30 are sequentially formed on the TFT layer T, wherein the TFT layer T includes an active layer 11, a gate insulating layer 12, a gate electrode 13, an interlayer dielectric 14, a source electrode 15 and a drain electrode 16.

[0008] An anode electrode 40 and an auxiliary electrode 50 are formed on the planarization layer 30. The auxiliary electrode 50 reduces the resistance of a cathode electrode 80 to be described below.

[0009] A bank 60 is formed on the anode electrode 40 and the auxiliary electrode 50 , and the bank 60 defines a pixel region. An organic light emitting layer 70 is formed in the pixel region defined by the bank 60 , and a cathode electrode 80 is formed on the organic light emitting layer 70 .

[0010] In the top emission type, light emitted from the organic light emitting layer 70 passes through the cathode electrode 80. Therefore, the cathode electrode 80 is formed of a transparent conductive material, and the resistance of the cathode electrode 80 increases. In order to reduce the resistance of the cathode electrode 80, the cathode electrode 80 is connected to the auxiliary electrode 50.

[0011] The gate insulating layer 12 and the interlayer dielectric 14 are formed in the pad area PA on the substrate 10, a signal pad 90 is formed on the interlayer dielectric 14, and a passivation layer 20 is formed on the signal pad 90. A hole is provided in the passivation layer 20, and the signal pad 90 is exposed to the outside through the hole. Because the signal pad 90 should be connected to an external driving circuit, the signal pad 90 is exposed to the outside by forming a hole in the passivation layer 20.

[0012] The related art top emission type organic light emitting display device has the following problems.

[0013] Because the signal pad 90 should be connected to an external drive circuit, the top of the signal pad 90 is exposed to the outside. For this reason, the top of the signal pad 90 is corroded, and the corrosion extends to other areas. A metal layer with excellent corrosion resistance can be further formed on the top of the signal pad 90 to prevent the top of the signal pad 90 from being corroded, but in this case, the number of processes increases. In addition, the same electrode layer as the anode electrode 40 can be formed on the signal pad 90 by the same process, thereby preventing the top of the signal pad 90 from being corroded without increasing the number of processes. However, even in this case, it is still not possible to prevent the material of the electrode layer from being corroded, or it is still not possible to prevent the corrosion from extending through the side surface of the electrode layer.

[0014] Furthermore, in order to connect the signal pad 90 to the external driving circuit, the top of the signal pad 90 is exposed by forming a hole in the passivation layer 20, but when the hole of the passivation layer 20 is formed in advance, the etchant used for patterning the anode electrode 40 flows through the hole and damages the signal pad 90. In order to prevent the damage, the hole formation process of the passivation layer 20 for exposing the top of the signal pad 90 may be performed separately after the process of patterning the anode electrode 40 is completed, but in this case, a separate mask process is added. Summary of the invention

[0015] Accordingly, the present invention is directed to a top emission type organic light emitting display device and a method of manufacturing the same that substantially obviate one or more problems due to limitations and disadvantages of the related art.

[0016] An aspect of the present invention is to provide a top emission type organic light emitting display device and a method of manufacturing the same, in which the number of additional processes is minimized and a signal pad is prevented from being corroded.

[0017] The following description will partially list the additional advantages and features of the present invention, and some of these advantages and features will become obvious to those skilled in the art according to the following explanations or can be understood through the practice of the present invention. These purposes and other advantages of the present invention can be achieved and obtained through the structures specifically pointed out in the specification, claims and drawings.

[0018] In order to achieve these and other advantages and in accordance with the intent of the present invention, as embodied and generally described herein, an organic light-emitting display device is provided, wherein an anode electrode, an organic light-emitting layer, a cathode electrode, and an auxiliary electrode connected to the cathode electrode are provided in an active area of ​​a substrate, and a signal pad and a first pad electrode connected to the signal pad are provided in a pad area of ​​the substrate, wherein the auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode connected to the first auxiliary electrode through a contact hole, and the first pad electrode is formed of the same material as that of the first auxiliary electrode.

[0019] In another aspect of the present invention, an organic light-emitting display device is provided, configured to include a substrate having an active area and a pad area; an anode electrode arranged in the active area of ​​the substrate; an organic light-emitting layer arranged on the anode electrode; a cathode electrode arranged on the organic light-emitting layer; an auxiliary electrode connected to the cathode electrode; a signal pad arranged in the pad area of ​​the substrate; and a first pad electrode connected to the signal pad, the first pad electrode covering the top of the signal pad to prevent the top of the signal pad from being corroded, wherein: the auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode connected to the first auxiliary electrode through a contact hole, and the first pad electrode is formed of the same material as the first auxiliary electrode.

[0020] In another aspect of the present invention, a method for manufacturing an organic light-emitting display device is provided, comprising: forming a source electrode, a drain electrode and a signal pad on a substrate; forming a passivation layer on the source electrode, the drain electrode and the signal pad; forming a contact hole exposing the source electrode or the drain electrode to the outside by removing a predetermined area of ​​the passivation layer, and forming a contact hole for exposing the signal pad to the outside by removing another part of the passivation layer; forming a first anode electrode connected to the source electrode or the drain electrode, a first auxiliary electrode separated from the first anode electrode, and a first pad electrode connected to the signal pad, the first pad electrode being formed of the same material as that of the first auxiliary electrode; and forming a first contact hole exposing the first anode electrode to the outside, and forming a second contact hole exposing the first auxiliary electrode to the outside.

[0021] It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings, which are included to provide a further understanding of the present invention and are incorporated in and constitute a part of this application, illustrate embodiments of the present invention and together with the description serve to explain the principle of the present invention. In the drawings:

[0023] Figure 1 is a schematic cross-sectional view of a top emission type organic light emitting display device of the related art;

[0024] Figure 2 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention;

[0025] Figure 3 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention;

[0026] Figure 4A to 4K is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention; and

[0027] Figures 5A to 5H is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention. DETAILED DESCRIPTION

[0028] Reference will now be made in detail to typical embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings to refer to the same or like parts.

[0029] The advantages and features of the present invention and the methods for implementing the same will be explained by the following embodiments described with reference to the accompanying drawings. However, the present invention can be implemented in different forms and should not be construed as being limited to the embodiments listed here. Rather, these embodiments are provided to make the disclosure comprehensive and complete and to fully convey the scope of the present invention to those skilled in the art. In addition, the present invention is limited only by the scope of the claims.

[0030] The shapes, sizes, proportions, angles and quantities disclosed in the accompanying drawings for the purpose of describing the embodiments of the present invention are merely examples, and the present invention is not limited to the details shown in the drawings. Similar reference numerals represent similar elements throughout the text. In the following description, when it is determined that a detailed description of a related known function or structure would unnecessarily obscure the key points of the present invention, the detailed description will be omitted. Where "including", "having" and "comprising" are used in this specification for description, other components may be added unless "only" is used.

[0031] When interpreting an element, even if it is not explicitly stated, the element should be interpreted as including a range of error.

[0032] When describing a positional relationship, for example, when the positional relationship between two components is described as “on,” “over,” “below,” and “after,” one or more other components may be disposed between the two components unless “just” or “directly” is used.

[0033] When describing a time relationship, for example, when a time sequence is described as "after," "subsequently," "next," and "before," discontinuous cases may be included unless "directly" or "directly" is used.

[0034] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are merely used to distinguish elements from each other. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element without departing from the scope of the present invention.

[0035] Those skilled in the art will fully understand that the features of the various embodiments of the present invention may be combined or combined with each other in part or in whole, and may interoperate and drive each other in various ways in technology. The embodiments of the present invention may be implemented independently of each other, or implemented together in a mutually dependent relationship.

[0036] Hereinafter, typical embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0037] Figure 2 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

[0038] like Figure 2 As shown in , the organic light emitting display device according to an embodiment of the present invention may include an active area AA and a pad area PA, which are included in a substrate 100 .

[0039] A thin film transistor (TFT) T, a passivation layer 165, a first planarization layer 171, a second planarization layer 172, a first anode electrode 180, a second anode electrode 200, a first auxiliary electrode 190, a second auxiliary electrode 210, a dam 220, a partition wall 230, an organic light-emitting layer 240 and a cathode electrode 250 can be formed in the active area AA of the substrate 100.

[0040] The TFT T may include an active layer 110 , a gate insulating layer 120 , a gate electrode 130 , an interlayer dielectric 140 , a source electrode 150 , and a drain electrode 160 .

[0041] The active layer 110 may be formed on the substrate 100 to overlap the gate electrode 130. The active layer 110 may be formed of a silicon-based semiconductor material, or may be formed of an oxide-based semiconductor material. Although not shown, a light shielding layer may be further formed between the substrate 100 and the active layer 110, in which case external light incident through the bottom of the substrate 100 is blocked by the light shielding layer, thereby preventing the active layer 110 from being damaged by the external light.

[0042] A gate insulating layer 120 may be formed on the active layer 110. The gate insulating layer 120 may insulate the active layer 110 from the gate electrode 130. The gate insulating layer 120 may be formed of an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx) or a multilayer thereof, but is not limited thereto. The gate insulating layer 120 may extend to the pad area PA.

[0043] The gate electrode 130 may be formed on the gate insulating layer 120. The gate electrode 130 may be formed to overlap the active layer 110 with the gate insulating layer 120 therebetween. The gate electrode 130 may be formed of a single layer or multiple layers formed of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but is not limited thereto.

[0044] An interlayer dielectric 140 may be formed on the gate electrode 130. The interlayer dielectric 140 may be formed of the same inorganic insulating material as the gate insulating layer 120, such as silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto. The interlayer dielectric 140 may extend to the pad area PA.

[0045] A source electrode 150 and a drain electrode 160 facing each other may be formed on the interlayer dielectric 140. A first contact hole CH1 exposing one end region of the active layer 110 and a second contact hole CH2 exposing the other end region of the active layer 110 may be provided in the gate insulating layer 120 and the interlayer dielectric 140. The source electrode 150 may be connected to the other end region of the active layer 110 through the second contact hole CH2, and the drain electrode 160 may be connected to one end region of the active layer 110 through the first contact hole CH1.

[0046] The source electrode 150 may include a lower source electrode 151 and an upper source electrode 152 .

[0047] The lower source electrode 151 may be formed between the interlayer dielectric 140 and the upper source electrode 152, and the adhesion between the interlayer dielectric 140 and the upper source electrode 152 may be enhanced. In addition, the lower source electrode 151 protects the bottom of the upper source electrode 152, thereby preventing the bottom of the upper source electrode 152 from being corroded. Therefore, the oxidation rate of the lower source electrode 151 may be lower than the oxidation rate of the upper source electrode 152. That is, the lower source electrode 151 may be formed of a material having stronger corrosion resistance than the material forming the upper source electrode 152. As described above, the lower source electrode 151 may be used as an adhesion enhancement layer or an anti-corrosion layer, and the lower source electrode 151 may be formed of an alloy of Mo and Ti (MoTi), but is not limited thereto.

[0048] The upper source electrode 152 may be formed on the top of the lower source electrode 151. The upper source electrode 152 may be formed of Cu, which is a metal having low resistance, but is not limited thereto. The upper source electrode 152 may be formed of a metal having relatively lower resistance than the lower source electrode 151. In order to reduce the total resistance of the source electrode 150, the thickness of the upper source electrode 152 may be formed to be thicker than the thickness of the lower source electrode 151.

[0049] Similar to the above-described source electrode 150 , the drain electrode 160 may include a lower drain electrode 161 and an upper drain electrode 162 .

[0050] The lower drain electrode 161 may be formed between the interlayer dielectric 140 and the upper drain electrode 162. The lower drain electrode 161 enhances the adhesion between the interlayer dielectric 140 and the upper drain electrode 162 and also prevents the bottom of the upper drain electrode 162 from being corroded. Therefore, the oxidation rate of the lower drain electrode 161 may be lower than the oxidation rate of the upper drain electrode 162. That is, the lower drain electrode 161 may be formed of a material having stronger corrosion resistance than the material forming the upper drain electrode 162. As described above, the lower drain electrode 161 may be formed of an alloy of Mo and Ti (MoTi) which is the same as the above-mentioned material of the lower source electrode 151, but is not limited thereto.

[0051] The upper drain electrode 162 may be formed on the top of the lower drain electrode 161, and the upper drain electrode 162 may be formed of Cu, which is the same material as the upper source electrode 152, but is not limited thereto. The thickness of the upper drain electrode 162 may be formed thicker than that of the lower drain electrode 161, thereby reducing the overall resistance of the drain electrode 160.

[0052] The upper drain electrode 162 may be formed of the same material as the upper source electrode 152 to have the same thickness as the upper source electrode 152, and the lower drain electrode 161 may be formed of the same material as the lower source electrode 151 to have the same thickness as the lower source electrode 151. In this case, the drain electrode 160 and the source electrode 150 may be simultaneously formed by the same process.

[0053] The basic structure of the TFT T is not limited to the structure shown in the figure, and various modifications may be made as known to those skilled in the art. For example, the top gate structure in which the gate electrode 130 is formed above the active layer 110 is illustrated in the figure, but the TFT T may be formed with a bottom gate structure in which the gate electrode 130 is formed below the active layer 110.

[0054] A passivation layer 165 may be formed on the TFT T, more specifically, on the source electrode 150 and the drain electrode 160. The passivation layer 165 protects the TFT T. The passivation layer 165 may be formed of an inorganic insulating material such as SiOx and SiNx, but is not limited thereto. The passivation layer 165 may extend to the pad area PA.

[0055] A first planarization layer 171 may be formed on the passivation layer 165. The first planarization layer 171 may planarize the upper surface of the substrate 100 including the TFT T. The first planarization layer 171 may be formed of an organic insulating material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, etc., but is not limited thereto. The first planarization layer 171 may not extend to the pad area PA.

[0056] The first anode electrode 180 and the first auxiliary electrode 190 may be formed on the first planarization layer 171. That is, the first anode electrode 180 and the first auxiliary electrode 190 may be formed on the same layer. A third contact hole CH3 exposing the source electrode 150 may be provided in the passivation layer 165 and the first planarization layer 171, and the source electrode 150 may be connected to the first anode electrode 180 through the third contact hole CH3. In one or more embodiments, the first anode electrode 180 is connected to the source electrode 150. However, the source electrode 150 and the drain electrode 160 may be switched based on the mode of the transistor. Therefore, in one or more embodiments, the first anode electrode 180 may be connected to the drain electrode 160 instead of the source electrode 150. As a result, the first anode electrode 180 may be connected to the source electrode 150 or the drain electrode 160.

[0057] The first anode electrode 180 may include a first lower anode electrode 181 , a first upper anode electrode 182 , and a first capping anode electrode 183 .

[0058] The first lower anode electrode 181 may be formed between the first planarization layer 171 and the first upper anode electrode 182 and may enhance the adhesion between the first planarization layer 171 and the first upper anode electrode 182. In addition, the first lower anode electrode 181 protects the bottom of the first upper anode electrode 182, thereby preventing the bottom of the first upper anode electrode 182 from being corroded. Therefore, the oxidation rate of the first lower anode electrode 181 may be lower than the oxidation rate of the first upper anode electrode 182. That is, the first lower anode electrode 181 may be formed of a material having stronger corrosion resistance than the material forming the first upper anode electrode 182. In addition, the first lower anode electrode 181 protects the top of the upper source electrode 152, thereby preventing the top of the upper source electrode 152 from being corroded. Therefore, the oxidation rate of the first lower anode electrode 181 may be lower than the oxidation rate of the upper source electrode 152. That is, the first lower anode electrode 181 may be formed of a material having stronger corrosion resistance than the material forming the upper source electrode 152. As described above, the first lower anode electrode 181 prevents the top of the upper source electrode 152 from being corroded, so that the source electrode 150 can be formed in the above-mentioned double-layer structure. The first lower anode electrode 181 can be used as an adhesion enhancement layer or an anti-corrosion layer and can be formed of an alloy of Mo and Ti (MoTi), but is not limited thereto.

[0059] The first upper anode electrode 182 may be formed between the first lower anode electrode 181 and the first cover anode electrode 183. The first upper anode electrode 182 may be formed of Cu, which is a metal having low resistance, but is not limited thereto. The first upper anode electrode 182 may be formed of a metal having relatively lower resistance than the first lower anode electrode 181. In order to reduce the total resistance of the first anode electrode 180, the thickness of the first upper anode electrode 182 may be formed to be thicker than the thickness of each of the first lower anode electrode 181 and the first cover anode electrode 183.

[0060] The first cover anode electrode 183 may be formed on the first upper anode electrode 182. The first cover anode electrode 183 may be formed to cover the top and side surfaces of the first upper anode electrode 182, thereby preventing the first upper anode electrode 182 from being corroded. For this reason, the oxidation rate of the first cover anode electrode 183 may be lower than the oxidation rate of the first upper anode electrode 182. That is, the first cover anode electrode 183 may be formed of a material having stronger corrosion resistance than the material forming the first upper anode electrode 182.

[0061] The first cover anode electrode 183 may cover the side surface of the first lower anode electrode 181. In this case, the oxidation rate of the first cover anode electrode 183 may be lower than the oxidation rate of the first lower anode electrode 181. That is, the first cover anode electrode 183 may be formed of a material having stronger corrosion resistance than the material forming the first lower anode electrode 181. The first cover anode electrode 183 may be formed of a transparent conductive material such as indium tin oxide (ITO), etc., but is not limited thereto.

[0062] Similar to the above-mentioned first anode electrode 180 , the first auxiliary electrode 190 may include a first lower auxiliary electrode 191 , a first upper auxiliary electrode 192 , and a first cover auxiliary electrode 193 .

[0063] The first lower auxiliary electrode 191 may be formed between the first planarization layer 171 and the first upper auxiliary electrode 192. The first lower auxiliary electrode 191 enhances the adhesive force between the first planarization layer 171 and the first upper auxiliary electrode 192 and also prevents the bottom of the first upper auxiliary electrode 192 from being corroded. Therefore, the oxidation rate of the first lower auxiliary electrode 191 may be lower than the oxidation rate of the first upper auxiliary electrode 192. That is, the first lower auxiliary electrode 191 may be formed of a material having stronger corrosion resistance than the material forming the first upper auxiliary electrode 192. As described above, the first lower auxiliary electrode 191 may be formed of an alloy of Mo and Ti (MoTi) which is the same as the above-mentioned material of the first lower anode electrode 181, but is not limited thereto.

[0064] The first upper auxiliary electrode 192 may be formed between the first lower auxiliary electrode 191 and the first cover auxiliary electrode 193 and may be formed of Cu, which is the same material as the first upper anode electrode 182, but is not limited thereto. The thickness of the first upper auxiliary electrode 192 having relatively low resistance may be formed to be thicker than the thickness of each of the first lower auxiliary electrode 191 and the first cover auxiliary electrode 193 having relatively high resistance, thereby reducing the total resistance of the first auxiliary electrode 190.

[0065] The first cover auxiliary electrode 193 may be formed on the first upper auxiliary electrode 192. The first cover auxiliary electrode 193 may be formed to cover the top and side surfaces of the first upper auxiliary electrode 192, thereby preventing the first upper auxiliary electrode 192 from being corroded. For this reason, the oxidation rate of the first cover auxiliary electrode 193 may be lower than the oxidation rate of the first upper auxiliary electrode 192. That is, the first cover auxiliary electrode 193 may be formed of a material having a stronger corrosion resistance than the material forming the first upper auxiliary electrode 192.

[0066] The first cover auxiliary electrode 193 may cover the side surface of the first lower auxiliary electrode 191. In this case, the oxidation rate of the first cover auxiliary electrode 193 may be lower than the oxidation rate of the first lower auxiliary electrode 191. That is, the first cover auxiliary electrode 193 may be formed of a material having stronger corrosion resistance than the material forming the first lower auxiliary electrode 191. The first cover auxiliary electrode 193 may be formed of a transparent conductive material such as ITO, etc., but is not limited thereto.

[0067] The first cover auxiliary electrode 193 may be formed of the same material as the first cover anode electrode 183 to have the same thickness as the first cover anode electrode 183, the first upper auxiliary electrode 192 may be formed of the same material as the first upper anode electrode 182 to have the same thickness as the first upper anode electrode 182, and the first lower auxiliary electrode 191 may be formed of the same material as the first lower anode electrode 181 to have the same thickness as the first lower anode electrode 181. In this case, the first auxiliary electrode 190 and the first anode electrode 180 may be simultaneously formed by the same process.

[0068] A second planarization layer 172 may be formed on the first auxiliary electrode 190 and the first anode electrode 180. The second planarization layer 172 together with the first planarization layer 171 may planarize the upper surface of the substrate 100. The second planarization layer 172 may be formed of an organic insulating material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, etc., but is not limited thereto. The second planarization layer 172 may not extend to the pad area PA.

[0069] The second planarization layer 172 may include a fourth contact hole CH4 and a fifth contact hole CH5 therein. The first anode electrode 180 may be exposed through the fourth contact hole CH4, and the first auxiliary electrode 190 may be exposed through the fifth contact hole CH5.

[0070] The second anode electrode 200 may be formed on the second planarization layer 172. The second anode electrode 200 may be connected to the first anode electrode 180 through the fourth contact hole CH4. The second anode electrode 200 may reflect light emitted from the organic light emitting layer 240 in an upward direction, and for this purpose, the second anode electrode 200 may be formed of a material having excellent reflectivity. The second anode electrode 200 may include a second lower anode electrode 201, a second middle anode electrode 202, and a second upper anode electrode 203.

[0071] The second lower anode electrode 201 may be formed between the first anode electrode 180 and the second middle anode electrode 202. The second lower anode electrode 201 protects the bottom of the second middle anode electrode 202, thereby preventing the bottom of the second middle anode electrode 202 from being corroded. For this reason, the oxidation rate of the second lower anode electrode 201 may be lower than the oxidation rate of the second middle anode electrode 202. That is, the second lower anode electrode 201 may be formed of a material having stronger corrosion resistance than the material forming the second middle anode electrode 202. The second lower anode electrode 201 may be formed of a transparent conductive material such as ITO, etc., but is not limited thereto.

[0072] The second middle anode electrode 202 may be formed between the second lower anode electrode 201 and the second upper anode electrode 203. The second middle anode electrode 202 may be formed of a material having a lower resistance than the second lower anode electrode 201 and the second upper anode electrode 203 but a better reflectivity than the second lower anode electrode 201 and the second upper anode electrode 203, for example, the second middle anode electrode 202 may be formed of silver (Ag). However, the present embodiment is not limited thereto. The thickness of the second middle anode electrode 202 having a relatively low resistance may be formed to be thicker than the thickness of each of the second lower anode electrode 201 and the second upper anode electrode 203 having a relatively high resistance, thereby reducing the total resistance of the second anode electrode 200.

[0073] The second upper anode electrode 203 may be formed on the top of the second middle anode electrode 202, thereby preventing the top of the second middle anode electrode 202 from being corroded. For this reason, the oxidation rate of the second upper anode electrode 203 may be lower than the oxidation rate of the second middle anode electrode 202. That is, the second upper anode electrode 203 may be formed of a material having stronger corrosion resistance than the material forming the second middle anode electrode 202. The second upper anode electrode 203 may be formed of a transparent conductive material such as ITO, etc., but is not limited thereto.

[0074] Similar to the second anode electrode 200, the second auxiliary electrode 210 may be formed on the second planarization layer 172. The second auxiliary electrode 210 may be connected to the first auxiliary electrode 190 through the fifth contact hole CH5. The second auxiliary electrode 210 may reduce the resistance of the cathode electrode 250 together with the first auxiliary electrode 190.

[0075] The second auxiliary electrode 210 may include a second lower auxiliary electrode 211 , a second middle auxiliary electrode 212 , and a second upper auxiliary electrode 213 .

[0076] The second lower auxiliary electrode 211 may be formed between the first auxiliary electrode 190 and the second middle auxiliary electrode 212. The second lower auxiliary electrode 211 protects the bottom of the second middle auxiliary electrode 212, thereby preventing the bottom of the second middle auxiliary electrode 212 from being corroded. For this reason, the oxidation rate of the second lower auxiliary electrode 211 may be lower than the oxidation rate of the second middle auxiliary electrode 212. That is, the second lower auxiliary electrode 211 may be formed of a material having stronger corrosion resistance than the material forming the second middle auxiliary electrode 212. The second lower auxiliary electrode 211 may be formed of a transparent conductive material such as ITO, etc., but is not limited thereto.

[0077] The second middle auxiliary electrode 212 may be formed between the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213. The second middle auxiliary electrode 212 may be formed of a material having a lower resistance than the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213 but a higher reflectivity than the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213, for example, the second middle auxiliary electrode 212 may be formed of silver (Ag). However, the present embodiment is not limited thereto. The thickness of the second middle auxiliary electrode 212 having a relatively low resistance may be formed to be thicker than the thickness of each of the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213 having a relatively high resistance, thereby reducing the total resistance of the second auxiliary electrode 210.

[0078] The second upper auxiliary electrode 213 may be formed on the top of the second middle auxiliary electrode 212, thereby preventing the top of the second middle auxiliary electrode 212 from being corroded. For this reason, the oxidation rate of the second upper auxiliary electrode 213 may be lower than the oxidation rate of the second middle auxiliary electrode 212. That is, the second upper auxiliary electrode 213 may be formed of a material having stronger corrosion resistance than the material forming the second middle auxiliary electrode 212. The second upper auxiliary electrode 213 may be formed of a transparent conductive material such as ITO, etc., but is not limited thereto.

[0079] The second upper auxiliary electrode 213 may be formed of the same material as the second upper anode electrode 203 to have the same thickness as the second upper anode electrode 203, the second middle auxiliary electrode 212 may be formed of the same material as the second middle anode electrode 202 to have the same thickness as the second middle anode electrode 202, and the second lower auxiliary electrode 211 may be formed of the same material as the second lower anode electrode 201 to have the same thickness as the second lower anode electrode 201. In this case, the second auxiliary electrode 210 and the second anode electrode 200 may be simultaneously formed by the same process.

[0080] According to an embodiment of the present invention, two auxiliary electrodes (eg, the first auxiliary electrode 190 and the second auxiliary electrode 210 ) connected to each other may be formed to reduce the resistance of the cathode electrode 250 , thereby making it easier to adjust desired resistance characteristics of the auxiliary electrodes.

[0081] In more detail, since the second auxiliary electrode 210 is formed on the same layer as the layer where the second anode electrode 200 is located, when the width of the second auxiliary electrode 210 increases, the width of the second anode electrode 200 should be reduced, in which case the pixel area of ​​the display device is reduced. For this reason, there is a limit to increasing the width of the second auxiliary electrode 210. Therefore, according to an embodiment of the present invention, the first auxiliary electrode 190 connected to the second auxiliary electrode 210 may be further formed below the second auxiliary electrode 210, thereby effectively reducing the resistance of the cathode electrode 250 without even any reduction in the pixel area.

[0082] The first auxiliary electrode 190 may be formed on the same layer as the first anode electrode 180, and because the first anode electrode 180 connects the source electrode 150 to the second anode electrode 200, the width of the first anode electrode 180 is reduced, thereby increasing the width of the first auxiliary electrode 190. That is, the width of the first auxiliary electrode 190 may be formed to be larger than the width of the first anode electrode 180, and in order to overlap the first auxiliary electrode 190 with the second anode electrode 200, the width of the first auxiliary electrode 190 may be increased, thereby more effectively reducing the resistance of the cathode electrode 250.

[0083] The bank 220 may be formed on the second anode electrode 200 and the second auxiliary electrode 210 .

[0084] The bank 220 may be formed on one side and the other side of the second anode electrode 200 to expose the top of the second anode electrode 200. Since the bank 220 is formed to expose the top of the second anode electrode 200, an area for displaying an image is ensured. In addition, since the bank 220 is formed on one side and the other side of the second anode electrode 200, the side surface of the second central anode electrode 202, which is prone to corrosion, is prevented from being exposed to the outside, thereby preventing the side surface of the second central anode electrode 202 from being corroded.

[0085] The bank 220 may be formed on one side and the other side of the second auxiliary electrode 210 to expose the top of the second auxiliary electrode 210. Since the bank 220 is formed to expose the top of the second auxiliary electrode 210, an electrical connection space between the second auxiliary electrode 210 and the cathode electrode 250 is ensured. In addition, since the bank 220 is formed on one side and the other side of the second auxiliary electrode 210, the side surface of the second middle auxiliary electrode 212, which is prone to corrosion, is prevented from being exposed to the outside, thereby preventing the side surface of the second middle auxiliary electrode 212 from being corroded.

[0086] Also, the bank 220 may be formed between the second anode electrode 200 and the second auxiliary electrode 210 and may insulate the second anode electrode 200 from the second auxiliary electrode 210. The bank 220 may be formed of an organic insulating material such as polyimide resin, acrylic resin, benzocyclobutene (BCB), etc., but is not limited thereto.

[0087] The partition wall 230 may be formed on the second auxiliary electrode 210. The partition wall 230 may be separated from the bank 220 by a certain distance, and the second auxiliary electrode 210 may be electrically connected to the cathode electrode 250 via the separation space between the partition wall 230 and the bank 220. The second auxiliary electrode 210 may be electrically connected to the cathode electrode 250 without forming the partition wall 230. However, if the partition wall 230 is formed, it is easier to deposit and form the organic light emitting layer 240. This will be described in more detail below.

[0088] If the partition wall 230 is not formed, in order to prevent the top of the second auxiliary electrode 210 from being covered by the organic light emitting layer 240, a mask pattern for covering the top of the second auxiliary electrode 210 is required when the organic light emitting layer 240 is deposited. However, if the partition wall 230 is formed, the top of the partition wall 230 can be used as an eaves when the organic light emitting layer 240 is deposited, and thus, since the organic light emitting layer 240 is not deposited under the eaves, a mask pattern for covering the top of the second auxiliary electrode 210 is not required. That is, for the case where the organic light emitting display device is viewed from the front, when the top of the partition wall 230 used as the eaves is formed to cover the separation space between the partition wall 230 and the bank 220, the organic light emitting layer 240 cannot penetrate into the separation space between the partition wall 230 and the bank 220, and thus, the second auxiliary electrode 210 can be exposed in the separation space between the partition wall 230 and the bank 220. In particular, the organic light emitting layer 240 may be formed by a deposition process, such as an evaporation process, which is superior in straightness of the deposited material, and thus the organic light emitting layer 240 is not deposited in the separation space between the partition wall 230 and the bank 220 .

[0089] As described above, in order to make the top of the partition wall 230 function as an eaves portion, the width of the top of the partition wall 230 may be formed to be greater than the width of the bottom of the partition wall 230. The partition wall 230 may include a lower first partition wall 231 and an upper second partition wall 232. The first partition wall 231 may be formed on the top of the second auxiliary electrode 210 and may be formed of the same material as the embankment 220 through the same process as the embankment 220. The second partition wall 232 may be formed on the top of the first partition wall 231. The width of the top of the second partition wall 232 may be formed to be greater than the width of the bottom of the second partition wall 232, and in particular, the top of the second partition wall 232 may be formed to cover the separation space between the partition wall 230 and the embankment 220 and may function as an eaves portion.

[0090] The organic light emitting layer 240 may be formed on the second anode electrode 220. The organic light emitting layer 240 may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. The basic structure of the organic light emitting layer 240 may be modified to have various structures known to those skilled in the art.

[0091] The organic light emitting layer 240 may extend to the top of the bank 220. However, the organic light emitting layer 240 may not extend to the top of the second auxiliary electrode 210 in a state of covering the top of the second auxiliary electrode 210. This is because when the organic light emitting layer 240 covers the top of the second auxiliary electrode 210, it is difficult to electrically connect the second auxiliary electrode 210 to the cathode electrode 250. As described above, the organic light emitting layer 240 may be formed by a deposition process without a mask for covering the top of the second auxiliary electrode 210, and in this case, the organic light emitting layer 240 may be formed on the top of the partition wall 230.

[0092] The cathode electrode 250 may be formed on the organic light emitting layer 240. The cathode electrode 250 may be formed on the surface that emits light, and thus the cathode electrode 250 may be formed of a transparent conductive material. Since the cathode electrode 250 is formed of a transparent conductive material, the resistance of the cathode electrode 250 is high, and for this reason, in order to reduce the resistance of the cathode electrode 250, the cathode electrode 250 may be connected to the second auxiliary electrode 210. That is, the cathode electrode 250 may be connected to the second auxiliary electrode 210 via the separation space between the partition wall 230 and the bank 220. The cathode electrode 250 may be formed by a deposition process that is not good in terms of the flatness of the deposited material, such as a sputtering process, and thus in the process of depositing the cathode electrode 250, the cathode electrode 250 may be deposited in the separation space between the partition wall 230 and the bank 220.

[0093] Although not shown, an encapsulation layer may be further formed on the cathode electrode 250, and the encapsulation layer prevents the penetration of moisture. The encapsulation layer may use various materials known to those skilled in the art. In addition, although not shown, a color filter may be further formed on the cathode electrode 250 for each pixel, in which case white light may be emitted from the organic light emitting layer 240.

[0094] The gate insulating layer 120 , the interlayer dielectric 140 , the signal pad 300 , the passivation layer 165 , and the first pad electrode 400 may be formed in the pad area PA of the substrate 100 .

[0095] A gate insulating layer 120 may be formed on the substrate 100 and an interlayer dielectric 140 may be formed on the gate insulating layer 120. The gate insulating layer 120 and the interlayer dielectric 140 may extend from the active area AA and may be formed throughout the pad area PA.

[0096] The signal pad 300 may be formed on the interlayer dielectric 140. The signal pad 300 may be formed on the same layer as the source electrode 150 and the drain electrode 160 located in the active area AA.

[0097] The signal pads 300 may include a lower signal pad 301 and an upper signal pad 302 .

[0098] The lower signal pad 301 may be formed between the interlayer dielectric 140 and the upper signal pad 302, and the adhesion between the interlayer dielectric 140 and the upper signal pad 302 may be enhanced. In addition, the lower signal pad 301 prevents the bottom of the upper signal pad 302 from being corroded. Therefore, the oxidation rate of the lower signal pad 301 may be lower than the oxidation rate of the upper signal pad 302. That is, the lower signal pad 301 may be formed of a material having stronger corrosion resistance than the material forming the upper signal pad 302. As described above, the lower signal pad 301 may be formed of an alloy of Mo and Ti (MoTi) which is the same as the above-mentioned material of the lower source electrode 151 or the lower drain electrode 161, but is not limited thereto.

[0099] The upper signal pad 302 may be formed on the top of the lower signal pad 301. The upper signal pad 302 may be formed of Cu, which is a metal having low resistance, but is not limited thereto. The upper signal pad 302 may be formed of a metal having relatively lower resistance than the lower signal pad 301. In order to reduce the total resistance of the signal pad 300, the thickness of the upper signal pad 302 may be formed to be thicker than the thickness of the lower signal pad 301.

[0100] The upper signal pad 302 may be formed of the same material as the upper source electrode 152 and / or the upper drain electrode 162 to have the same thickness as the upper source electrode 152 and / or the upper drain electrode 162, and the lower signal pad 301 may be formed of the same material as the lower source electrode 151 and / or the lower drain electrode 161 to have the same thickness as the lower source electrode 151 and / or the lower drain electrode 161. In this case, the signal pad 300 and the source electrode 150 may be simultaneously formed by the same process, or the signal pad 300 and the drain electrode 160 may be simultaneously formed by the same process, or the signal pad 300, the source electrode 150, and the drain electrode 160 may be simultaneously formed by the same process.

[0101] A passivation layer 165 may be formed on the signal pad 300. The passivation layer 165 may extend from the active area AA. A contact hole exposing the source electrode or the drain electrode to the outside may be formed by removing a predetermined area of ​​the passivation layer, and a contact hole for exposing the signal pad to the outside may be formed by removing another portion of the passivation layer. For example, a sixth contact hole CH6 exposing a portion of the signal pad 300 may be included in the passivation layer 165.

[0102] The first pad electrode 400 may be formed on the passivation layer 165. The first pad electrode 400 may be connected to the signal pad 300 through the sixth contact hole CH6. The first pad electrode 400 may be exposed to the outside and connected to an external driver.

[0103] The first pad electrode 400 protects the top of the signal pad 300. The top of the signal pad 300 may be composed of the upper signal pad 302 which is relatively easy to corrode, and thus the first pad electrode 400 may be formed to cover the top of the upper signal pad 302 exposed through the sixth contact hole CH6, thereby preventing the upper signal pad 302 from being corroded. As described above, since the first pad electrode 400 prevents the top of the upper signal pad 302 from being corroded, the signal pad 300 may be formed in the above-mentioned double-layer structure. The oxidation rate of the first pad electrode 400, especially the oxidation rate of the first cover pad electrode 403, may be lower than the oxidation rate of the upper signal pad 302. That is, the first pad electrode 400, especially the first cover pad electrode 403, may be formed of a material having stronger corrosion resistance than the material forming the upper signal pad 302. In addition, since the first pad electrode 400 is exposed to the outside, the first capping pad electrode 403 corresponding to the uppermost surface of the first pad electrode 400 may be formed of a material having strong corrosion resistance.

[0104] The first pad electrode 400 may be formed of the same material as the first anode electrode 180 and / or the first auxiliary electrode 190 to have the same thickness as the first anode electrode 180 and / or the first auxiliary electrode 190. In this case, the first pad electrode 400 and the first anode electrode 180 and / or the first auxiliary electrode 190 may be patterned by the same mask process. The first pad electrode 400 may include a first lower pad electrode 401, a first upper pad electrode 402, and a first capping pad electrode 403.

[0105] The first lower pad electrode 401 may be formed to cover the top of the upper signal pad 302 exposed through the sixth contact hole CH6, thereby preventing the upper signal pad 302 from being corroded. To this end, the oxidation rate of the first lower pad electrode 401 may be lower than the oxidation rate of the upper signal pad 302. That is, the first lower pad electrode 401 may be formed of a material having a stronger corrosion resistance than the material forming the upper signal pad 302. As described above, the first lower pad electrode 401 prevents the top of the upper signal pad 302 from being corroded, and thus the signal pad 300 may be formed in the above-mentioned double-layer structure. The first lower pad electrode 401 may be formed of an alloy of Mo and Ti (MoTi) which is the same as the above-mentioned material of the first lower anode electrode 181 and / or the first lower auxiliary electrode 191, but is not limited thereto. The first lower pad electrode 401 may be formed of the same material as the first lower anode electrode 181 and / or the first lower auxiliary electrode 191 to have the same thickness as the first lower anode electrode 181 and / or the first lower auxiliary electrode 191, in which case the first lower pad electrode 401 and the first lower anode electrode 181 may be patterned by the same mask process, or the first lower pad electrode 401 and the first lower auxiliary electrode 191 may be patterned by the same mask process, or the first lower pad electrode 401, the first lower anode electrode 181 and the first lower auxiliary electrode 191 may be patterned by the same mask process.

[0106] The first upper pad electrode 402 may be formed between the first lower pad electrode 401 and the first cover pad electrode 403. The first upper pad electrode 402 may be formed of Cu, which is a metal having low resistance, but is not limited thereto. The first upper pad electrode 402 may be formed of a metal having relatively lower resistance than the first lower pad electrode 401 and the first cover pad electrode 403. In order to reduce the total resistance of the first pad electrode 400, the thickness of the first upper pad electrode 402 may be formed to be thicker than the thickness of each of the first lower pad electrode 401 and the first cover pad electrode 403. The first upper pad electrode 402 may be formed of the same material as the first upper anode electrode 182 and / or the first upper auxiliary electrode 192 to have the same thickness as the first upper anode electrode 182 and / or the first upper auxiliary electrode 192, in which case the first upper pad electrode 402 and the first upper anode electrode 182 may be patterned by the same mask process, or the first upper pad electrode 402 and the first upper auxiliary electrode 192 may be patterned by the same mask process, or the first upper pad electrode 402, the first upper anode electrode 182 and the first upper auxiliary electrode 192 may be patterned by the same mask process.

[0107] The first cover pad electrode 403 may be formed on the first upper pad electrode 402. The first cover pad electrode 403 may be formed to cover the top and side surfaces of the first upper pad electrode 402, thereby preventing the first upper pad electrode 402 from being corroded. That is, the first cover pad electrode 403 prevents the first upper pad electrode 402 from being exposed to the outside. For this reason, the oxidation rate of the first cover pad electrode 403 may be lower than the oxidation rate of the first upper pad electrode 402. That is, the first cover pad electrode 403 may be formed of a material having stronger corrosion resistance than the material forming the first upper pad electrode 402.

[0108] The first cover pad electrode 403 may cover the side surface of the first lower pad electrode 401. In this case, the oxidation rate of the first cover pad electrode 403 may be lower than the oxidation rate of the first lower pad electrode 401. That is, the first cover pad electrode 403 may be formed of a material having stronger corrosion resistance than the material forming the first lower pad electrode 401. The first cover pad electrode 403 may be formed of a transparent conductive material such as ITO, etc., but is not limited thereto. The first cover pad electrode 403 may be formed of the same material as the first cover anode electrode 183 and / or the first cover auxiliary electrode 193 to have the same thickness as the first cover anode electrode 183 and / or the first cover auxiliary electrode 193. In this case, the first cover pad electrode 403 and the first cover anode electrode 183 may be patterned by the same mask process, or the first cover pad electrode 403 and the first cover auxiliary electrode 193 may be patterned by the same mask process, or the first cover pad electrode 403, the first cover anode electrode 183 and the first cover auxiliary electrode 193 may be patterned by the same mask process.

[0109] Figure 3 2 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention. In addition to the changes in the structures of the second anode electrode 200 and the second auxiliary electrode 210 and the further provision of a second pad electrode 500, Figure 3 Organic light-emitting display devices and Figure 2 Thus, like reference numerals denote like elements. Hereinafter, only the elements which are similar to those in the organic light emitting display device will be described in detail. Figure 2 The above elements are different elements.

[0110] like Figure 3 As shown in , according to another embodiment of the present invention, the second anode electrode 200 may include a second middle anode electrode 202 and a second upper anode electrode 203, omitting the second lower anode electrode 201. In addition, the second auxiliary electrode 210 may include a second middle auxiliary electrode 212 and a second upper auxiliary electrode 213, omitting the second lower auxiliary electrode 211.

[0111] In this structure, the second middle anode electrode 202 and the second middle auxiliary electrode 212 may be formed of a material having excellent reflectivity and excellent corrosion resistance, such as an alloy of Mo and Ti (MoTi), but is not limited thereto.

[0112] According to another embodiment of the present invention, a second pad electrode 500 may be further formed on the first pad electrode 400. Since the second pad electrode 500 is further provided, the height of the pad portion increases and the contact area increases, whereby the second pad electrode 500 is more easily connected to an external driver. The second pad electrode 500 may be formed of the same material as the second anode electrode 200 and / or the second auxiliary electrode 210 having a double-layer structure to have the same thickness as the second anode electrode 200 and / or the second auxiliary electrode 210, in which case the second pad electrode 500 and the second anode electrode 200 may be patterned by the same mask process, or the second pad electrode 500 and the second auxiliary electrode 210 may be patterned by the same mask process, or the second pad electrode 500, the second anode electrode 200 and the second auxiliary electrode 210 may be patterned by the same mask process.

[0113] The second pad electrode 500 may include a second middle pad electrode 502 and a second upper pad electrode 503. The second middle pad electrode 502 may be formed of the same material as the second middle anode electrode 202 and / or the second middle auxiliary electrode 212, and the second upper pad electrode 503 may be formed of the same material as the second upper anode electrode 203 and / or the second upper auxiliary electrode 213.

[0114] According to another embodiment, the side surface of the second middle pad electrode 502 is exposed to the outside, but because the second middle pad electrode 502 is formed of a material having excellent corrosion resistance, the second middle pad electrode 502 is prevented from being corroded. In addition, the second upper pad electrode 503 is exposed to the outside, but because the second upper pad electrode 503 is formed of a material having excellent corrosion resistance, the second upper pad electrode 503 is prevented from being corroded.

[0115] Figure 4A to 4K is a cross-sectional view illustrating a method for manufacturing an organic light emitting display device according to an embodiment of the present invention, which involves manufacturing Figure 2 Thus, like reference numerals denote like elements, and the same or similar descriptions of the material and structure of each element will not be repeated.

[0116] First, if Figure 4A As shown in , an active layer 110 , a gate insulating layer 120 , a gate electrode 130 , an interlayer dielectric 140 , a source electrode 150 , a drain electrode 160 , and a signal pad 300 may be sequentially formed on a substrate 100 .

[0117] In more detail, an active layer 110 may be formed on a substrate 100, a gate insulating layer 120 may be formed on the active layer 110, a gate electrode 130 may be formed on the gate insulating layer 120, an interlayer dielectric 140 may be formed on the gate electrode 130, and a first contact hole CH1 and a second contact hole CH2 may be formed in the gate insulating layer 120 and the interlayer dielectric 140. Subsequently, a drain electrode 160, a source electrode 150, and a signal pad 300 may be formed, wherein the drain electrode 160 is connected to one end region of the active layer 110 through the first contact hole CH1, and the source electrode 150 is connected to the other end region of the active layer 110 through the second contact hole CH2.

[0118] Here, the active layer 110, the gate electrode 130, the source electrode 150, and the drain electrode 160 may be formed in the active area AA, the gate insulating layer 120 and the interlayer dielectric 140 may be formed to extend from the active area AA to the pad area PA, and the signal pad 300 may be formed in the pad area PA. Through this process, the TFT T may be formed in the active area AA, and the signal pad 300 may be formed in the pad area PA.

[0119] The source electrode 150 may be configured with a lower source electrode 151 and an upper source electrode 152, the drain electrode 160 may be configured with a lower drain electrode 161 and an upper drain electrode 162, and the signal pad 300 may be configured with a lower signal pad 301 and an upper signal pad 302. The source electrode 150, the drain electrode 160, and the signal pad 300 may be simultaneously formed of the same material through the same patterning process.

[0120] Then, if Figure 4B As shown in FIG, a passivation layer 165 may be formed on the source electrode 150, the drain electrode 160, and the signal pad 300, and a first planarization layer 171 may be formed on the passivation layer 165. The passivation layer 165 may be formed to extend from the active area AA to the pad area PA, and the first planarization layer 171 may be formed in the active area AA.

[0121] The passivation layer 165 and the first planarization layer 171 may be formed to include a third contact hole CH3 located in the active area AA, and the source electrode 150 may be exposed to the outside through the third contact hole CH3. In addition, the passivation layer 165 may be formed to include a sixth contact hole CH6 located in the pad area PA, and the signal pad 300 may be exposed to the outside through the sixth contact hole CH6.

[0122] According to an embodiment of the present invention, the third contact hole CH3 for exposing the source electrode 150 to the outside and the sixth contact hole CH6 for exposing the signal pad 300 to the outside can be formed at the same time, and thus the third contact hole CH3 and the sixth contact hole CH6 can be formed by one mask process, thereby preventing the number of mask processes from increasing. In more detail, since the upper signal pad 302 exposed by the sixth contact hole CH6 is easily corroded, it is required that the etchant does not contact the upper signal pad 302. According to an embodiment of the present invention, in the following description, Figure 4C In the process of , the exposed upper signal pad 302 may be covered by the lower pad electrode 401, so the etchant cannot contact the upper signal pad 302. For the same reason, the sixth contact hole CH6 and the third contact hole CH3 may be formed at the same time.

[0123] Then, if Figure 4C As shown in FIG. 1 , the first anode electrode 180 and the first auxiliary electrode 190 may be formed separately from each other on the first planarization layer 171 in the active area AA, and the first pad electrode 400 may be formed on the passivation layer 165 in the pad area PA.

[0124] The first anode electrode 180 may be formed to be connected to the source electrode 150 through the third contact hole CH3, and the first pad electrode 400 may be formed to be connected to the signal pad 300 through the sixth contact hole CH6. In other embodiments, the first anode electrode 180 may be formed to be connected to the drain electrode 160 through the third contact hole CH3 for exposing the drain electrode 160.

[0125] The first anode electrode 180 may be configured with a first lower anode electrode 181, a first upper anode electrode 182, and a first cover anode electrode 183. The first auxiliary electrode 190 may be configured with a first lower auxiliary electrode 191, a first upper auxiliary electrode 192, and a first cover auxiliary electrode 193. The first pad electrode 400 may be configured with a first lower pad electrode 401, a first upper pad electrode 402, and a first cover pad electrode 403.

[0126] The first anode electrode 180 , the first auxiliary electrode 190 , and the first pad electrode 400 may be simultaneously formed of the same material through the same patterning process.

[0127] Then, if Figure 4D As shown in FIG. 1 , a second planarization layer 172 may be formed on the first anode electrode 180 and the first auxiliary electrode 190 in the active area AA.

[0128] The second planarization layer 172 may be formed to include a fourth contact hole CH4 and a fifth contact hole CH5. The first anode electrode 180 may be exposed to the outside through the fourth contact hole CH4, and the first auxiliary electrode 190 may be exposed to the outside through the fifth contact hole CH5.

[0129] Then, if Figure 4E As shown in FIG. 1 , a first photoresist pattern 610 may be formed on the first pad electrode 400 in the pad area PA. The first pad electrode 400 may be covered by the first photoresist pattern 610, and thus the first pad electrode 400 may not be exposed to the outside. The first photoresist pattern 610 may not be formed in the active area AA.

[0130] Then, if Figure 4F As shown in FIG. 1 , a second anode electrode (see FIG. 1 ) may be formed in the pad area PA and the active area AA. Figure 4G 200) and the second auxiliary electrode (see Figure 4G In more detail, a lower electrode layer 1, an intermediate electrode layer 2, and an upper electrode layer 3 may be sequentially formed on the first photoresist pattern 610 in the pad area PA and the second planarization layer 172 in the active area AA. In addition, a second photoresist pattern 620 may be formed on the electrode layer, more specifically, on the upper electrode layer 3 in the active area AA.

[0131] Then, if Figure 4G As shown in FIG. 6 , the second anode electrode 200 and the second auxiliary electrode 210 may be formed by etching the lower electrode layer 1 , the intermediate electrode layer 2 , and the upper electrode layer 3 using the second photoresist pattern 620 as a mask.

[0132] That is, the second photoresist pattern 620 may be formed in a pattern corresponding to the pattern of each of the second anode electrode 200 and the second auxiliary electrode 210. Therefore, a portion of the lower electrode layer 1, a portion of the middle electrode layer 2, and a portion of the upper electrode layer 3 that are not covered by the second photoresist pattern 620 may be removed by an etching process, and a portion covered by the second photoresist pattern 620 may be left, thereby forming a pattern of each of the second anode electrode 200 and the second auxiliary electrode 210. As a result, the second anode electrode 200 and the second auxiliary electrode 210 may be simultaneously formed of the same material by the same patterning process.

[0133] The second anode electrode 200 may include a second lower anode electrode 201 , a second middle anode electrode 202 , and a second upper anode electrode 203 . The second auxiliary electrode 210 may include a second lower auxiliary electrode 211 , a second middle auxiliary electrode 212 , and a second upper auxiliary electrode 213 .

[0134] When portions of the lower electrode layer 1 , the intermediate electrode layer 2 , and the upper electrode layer 3 not covered by the second photoresist pattern 620 are removed by an etching process, the etchant does not damage the first pad electrode 400 because the first photoresist pattern 610 covers the first pad electrode 400 .

[0135] Then, if Figure 4H As shown in FIG, the first photoresist pattern 610 and the second photoresist pattern 620 may be removed by a stripping process. Therefore, the first pad electrode 400, the second anode electrode 200, and the second auxiliary electrode 210 may be exposed to the outside.

[0136] Figures 4E to 4H A method of forming a second anode electrode 200 and a second auxiliary electrode 210 without damaging a first pad electrode 400 is provided. According to an embodiment of the present invention, a first photoresist pattern 610 may be formed on the first pad electrode 400 to cover the first pad electrode 400, so that an etchant does not damage the first pad electrode 400 when forming a pattern of each of the second anode electrode 200 and the second auxiliary electrode 210. In addition, since the first photoresist pattern 610 is removed simultaneously with the second photoresist pattern 620, the manufacturing process is simplified.

[0137] Instead of using the first photoresist pattern 610, Figure 4D In the above process, the second planarization layer 172 can be formed to cover the first pad electrode 400 by extending the second planarization layer 172 to the pad area PA, and then the second anode electrode 200 and the second auxiliary electrode 210 can be formed. However, in this case, after the second anode electrode 200 and the second auxiliary electrode 210 are formed, a process of removing the area of ​​the second planarization layer 172 extending to the pad area PA by an oxygen (O2) ashing process should be further performed to expose the first pad electrode 400 to the outside. In particular, a photoresist pattern should be further formed as a mask for the process of removing the area of ​​the second planarization layer 172 extending to the pad area PA, and due to the oxygen (O2) ashing process, the inside of the chamber is contaminated and the process time is increased. Therefore, as described above with reference to Figures 4E to 4H As described above, the first photoresist pattern 610 may be preferably used.

[0138] Then, if Fig. 4I As shown in FIG. 1 , a bank 220 may be formed on one side and the other side of the second anode electrode 200 to expose the top of the second anode electrode 200. Also, a bank 220 may be formed on one side and the other side of the second auxiliary electrode 210 to expose the top of the second auxiliary electrode 210.

[0139] In addition, a first partition wall 231 and a second partition wall 232 may be sequentially formed on the exposed top of the second auxiliary electrode 210. The first partition wall 231 may be formed simultaneously with the bank 220 from the same material as the bank 220 through the same patterning process as the bank 220. The partition wall 230 may be formed to be separated from the bank 220 by a certain distance, and thus a separation space may be provided between the partition wall 230 and the bank 220.

[0140] In order to make the top of the partition wall 230 function as an eaves portion, the width of the top of the second partition wall 232 may be formed to be larger than the width of the bottom of the second partition wall 232. In particular, for the case where the organic light-emitting display device is viewed from the front, the top of the second partition wall 232 may cover the separation space between the partition wall 230 and the bank 220, so that in the process of depositing the organic light-emitting layer 240 to be described below, the organic light-emitting layer 240 is not deposited in the separation space between the partition wall 230 and the bank 220.

[0141] Then, if Figure 4J As shown in , an organic light emitting layer 240 may be formed on the second anode electrode 200. The organic light emitting layer 240 may be formed by a deposition process, such as an evaporation process, which is excellent in the flatness of the deposited material, and thus the organic light emitting layer 240 may be deposited on the top of the bank 220 and the partition wall 230, and the organic light emitting layer 240 is not deposited in the separation space between the partition wall 230 and the bank 220. That is, the top of the partition wall 230 may be used as an eaves portion when depositing the organic light emitting layer 240, and thus the organic light emitting layer 240 is not deposited in the separation space between the partition wall 230 and the bank 220 even when the organic light emitting layer 240 is deposited without using a mask pattern covering the top of the second auxiliary electrode 210.

[0142] Then, if Figure 4K As shown in FIG. 2 , a cathode electrode 250 may be formed on the organic light emitting layer 240 .

[0143] The cathode electrode 250 may be connected to the second auxiliary electrode 210 via a separation space between the partition wall 230 and the bank 220. The cathode electrode 250 may be formed by a deposition process that is poor in terms of the flatness of the deposited material, such as a sputtering process, and thus in the process of depositing the cathode electrode 250, the cathode electrode 250 may be deposited in the separation space between the partition wall 230 and the bank 220.

[0144] Figures 5A to 5H is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention, which involves manufacturing Figure 3 Hereinafter, descriptions repeated with the above-mentioned embodiments are omitted.

[0145] First, if Figure 5A As shown in FIG. 1 , an active layer 110, a gate insulating layer 120, a gate electrode 130, an interlayer dielectric 140, a source electrode 150, a drain electrode 160, and a signal pad 300 may be sequentially formed on a substrate 100. Thus, a TFT T may be formed in the active area AA, and a signal pad 300 may be formed in the pad area PA. This process is similar to Figure 4A The above process is the same.

[0146] Then, if Figure 5B As shown in , a passivation layer 165 may be formed on the source electrode 150 , the drain electrode 160 , and the signal pad 300 , and a first planarization layer 171 may be formed on the passivation layer 165 .

[0147] The passivation layer 165 and the first planarization layer 171 may be formed to include a third contact hole CH3 located in the active area AA, and the source electrode 150 may be exposed to the outside through the third contact hole CH3. In addition, the passivation layer 165 may be formed to include a sixth contact hole CH6 located in the pad area PA, and the signal pad 300 may be exposed to the outside through the sixth contact hole CH6. This process is similar to Figure 4B The above process is the same.

[0148] Then, if Figure 5C As shown in FIG. 1 , the first anode electrode 180 and the first auxiliary electrode 190 may be formed on the first planarization layer 171 in the active area AA, and the first pad electrode 400 may be formed on the passivation layer 165 in the pad area PA.

[0149] The first anode electrode 180 may be formed to be connected to the source electrode 150 through the third contact hole CH3, and the first pad electrode 400 may be formed to be connected to the signal pad 300 through the sixth contact hole CH6. Figure 4C The above process is the same.

[0150] Then, if Figure 5D As shown in FIG. 1 , a second planarization layer 172 may be formed on the first anode electrode 180 and the first auxiliary electrode 190 in the active area AA.

[0151] The second planarization layer 172 may be formed to include a fourth contact hole CH4 and a fifth contact hole CH5, through which the first anode electrode 180 may be exposed to the outside, and through which the first auxiliary electrode 190 may be exposed to the outside. Figure 4D The above process is the same.

[0152] Then, if Figure 5E As shown in FIG. 1 , the second anode electrode 200 and the second auxiliary electrode 210 may be formed on the second planarization layer 172 in the active area AA, and the second pad electrode 500 may be formed on the first pad electrode 400 in the pad area PA.

[0153] The second anode electrode 200 may be connected to the first anode electrode through the fourth contact hole CH4 , the second auxiliary electrode 210 may be connected to the second anode electrode 190 through the fifth contact hole CH5 , and the second pad electrode 500 may be formed directly on top of the first pad electrode 400 .

[0154] The second anode electrode 200 may include a second middle anode electrode 202 and a second upper anode electrode 203 , the second auxiliary electrode 210 may include a second middle auxiliary electrode 212 and a second upper auxiliary electrode 213 , and the second pad electrode 500 may include a second middle pad electrode 502 and a second upper pad electrode 503 .

[0155] The second anode electrode 200 , the second auxiliary electrode 210 , and the second pad electrode 500 may be simultaneously formed of the same material through the same patterning process, and thus a mask process is not increased.

[0156] The first cover pad electrode 403 formed on the uppermost surface of the first pad electrode 400 may be formed of the same material (e.g., ITO having excellent corrosion resistance) as the second upper pad electrode 503 formed on the uppermost surface of the second pad electrode 500. In this case, when the second pad electrode 500 is patterned, it is necessary to prevent the pattern of the first cover pad electrode 403 from being damaged. To this end, the second pad electrode 500 may be formed by the following process: an electrode material for the second middle pad electrode 502 and an electrode material for the second upper pad electrode 503 are sequentially deposited, the second upper pad electrode 503 is patterned by etching the electrode material for the second middle pad electrode 502, and then the second middle pad electrode 502 is patterned by etching the electrode material for the second upper pad electrode 503. That is, when etching the electrode material for the second upper pad electrode 503, the first cover pad electrode 403 is covered by the electrode material for the second middle pad electrode 502, so the etchant used to etch the electrode material of the second upper pad electrode 503 does not contact the first cover pad electrode 403, thereby preventing the pattern of the first cover pad electrode 403 from being damaged.

[0157] Then, if Fig. 5F As shown in , the bank 220 may be formed on one side and the other side of the second anode electrode 200 to expose the top of the second anode electrode 200. In addition, the bank 220 may be formed on one side and the other side of the second auxiliary electrode 210 to expose the top of the second auxiliary electrode 210. In addition, the first partition wall 231 and the second partition wall 232 may be sequentially formed on the exposed top of the second auxiliary electrode 210. The partition wall 230 may be formed to be separated from the bank 220 by a certain distance, so that a separation space may be provided between the partition wall 230 and the bank 220. This process is similar to Fig. 4I The above process is the same.

[0158] Then, if Figure 5GAs shown in FIG. 1 , an organic light emitting layer 240 may be formed on the second anode electrode 200. The organic light emitting layer 240 may be deposited on the top of the bank 220 and the top of the partition wall 230, but not in the separation space between the partition wall 230 and the bank 220. This process is similar to Figure 4J The above process is the same.

[0159] Then, if Figure 5H As shown in FIG. 1 , a cathode electrode 250 may be formed on the organic light emitting layer 240. The cathode electrode 250 may be connected to the second auxiliary electrode 210 via a separation space between the partition wall 230 and the bank 220. Figure 4K The above process is the same.

[0160] According to an embodiment of the present invention, the first pad electrode may be formed to cover the top of the signal pad, thereby preventing the signal pad from being corroded. Therefore, the signal pad may be formed in a double-layer structure including a lower signal pad and an upper signal pad that is easily corroded. In particular, since the first pad electrode and the first auxiliary electrode are formed simultaneously from the same material, the number of mask processes does not increase.

[0161] Furthermore, according to the embodiment of the present invention, a contact hole for exposing a source electrode to the outside and a contact hole for exposing a signal pad to the outside can be formed at the same time, so the number of mask processes does not increase.

[0162] Moreover, according to an embodiment of the present invention, two auxiliary electrodes (e.g., a first auxiliary electrode and a second auxiliary electrode) may be formed to reduce the resistance of the cathode electrode, thereby making it easier to adjust the desired resistance characteristics of the auxiliary electrodes. In particular, a first auxiliary electrode connected to the second auxiliary electrode through a contact hole may be further formed below the second auxiliary electrode, so that the resistance of the cathode electrode is effectively reduced without any reduction in the pixel area.

[0163] Without departing from the spirit or scope of the present invention, various modifications and changes can be made in the present invention, which will be apparent to those skilled in the art. Therefore, the present invention is intended to cover all modifications and changes to the present invention that fall within the scope of the appended claims and their equivalents.

Claims

1. An organic light emitting display device, comprising: a substrate configured to include an active area and a pad area; an anode electrode disposed in an active region of the substrate; An organic light-emitting layer disposed on the anode electrode; A cathode electrode disposed on the organic light-emitting layer; an auxiliary electrode connected to the cathode electrode; A signal pad disposed in a pad region of the substrate; and a first pad electrode connected to the signal pad, the first pad electrode covering the top of the signal pad, wherein the first pad electrode includes a first lower pad electrode, a first upper pad electrode and a first cover pad electrode, and the first upper pad electrode is arranged to cover the entire top of the first lower pad electrode without covering the side surface of the first lower pad electrode, and the first cover pad electrode is arranged to cover the top and side surface of the first upper pad electrode and the side surface of the first lower pad electrode without contacting the top of the first lower pad electrode, wherein the oxidation rate of the first cover pad electrode is lower than the oxidation rate of the first lower pad electrode and the oxidation rate of the first upper pad electrode, The auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode connected to the first auxiliary electrode through a contact hole, and the second auxiliary electrode directly contacts the cathode electrode. wherein the first auxiliary electrode comprises a first lower auxiliary electrode, a first upper auxiliary electrode and a first cover auxiliary electrode, and the first cover auxiliary electrode is arranged to contact the top and side surfaces of the first upper auxiliary electrode and the side surfaces of the first lower auxiliary electrode, The first lower pad electrode and the first lower auxiliary electrode are formed simultaneously from the same material through the same mask process, the first upper pad electrode and the first upper auxiliary electrode are formed simultaneously from the same material through the same mask process, and the first cover pad electrode and the first cover auxiliary electrode are formed simultaneously from the same material through the same mask process. 2 . The organic light emitting display device according to claim 1 , wherein the signal pad comprises a lower signal pad and an upper signal pad on the lower signal pad, and an oxidation rate of the lower signal pad is lower than an oxidation rate of the upper signal pad.

3. The organic light emitting display device according to claim 2, further comprising a thin film transistor, the thin film transistor comprising a source electrode below the anode electrode, wherein the source electrode comprises a lower source electrode and an upper source electrode on the lower source electrode, and The lower source electrode is formed of the same material as that of the lower signal pad, and the upper source electrode is formed of the same material as that of the upper signal pad. 4 . The organic light emitting display device according to claim 1 , further comprising a second pad electrode disposed on the first pad electrode. 5 . The organic light emitting display device of claim 4 , wherein the second pad electrode is formed of the same material as that of the second auxiliary electrode.

6. The organic light emitting display device according to claim 1, wherein the anode electrode comprises a first anode electrode and a second anode electrode connected to the first anode electrode through a contact hole, and The first anode electrode includes a first lower anode electrode, a first upper anode electrode and a first cover anode electrode, and the first cover anode electrode is arranged to contact the top and side surfaces of the first upper anode electrode and the side surfaces of the first lower anode electrode.

7. An organic light-emitting display device according to claim 6, wherein the first lower pad electrode is formed of the same material as the first lower anode electrode, the first upper pad electrode is formed of the same material as the first upper anode electrode, and the first cover pad electrode is formed of the same material as the first cover anode electrode.

8. The organic light emitting display device according to claim 1, wherein the anode electrode comprises a first anode electrode and a second anode electrode connected to the first anode electrode through a contact hole, and The width of the first auxiliary electrode is greater than the width of the first anode electrode, and the first auxiliary electrode is arranged to overlap with the second anode electrode.

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