Memristor and method of making the same

Abstract

The application provides a memristor and a preparation method thereof. The memristor comprises a first silver wire, a second silver wire and an insulating layer, the insulating layer is silver oxide, and the insulating layer is sandwiched between the first silver wire and the second silver wire. The preparation method of the memristor comprises the following steps: providing the first silver wire and the second silver wire, performing surface treatment on the first silver wire and / or the second silver wire to obtain the insulating layer, and stacking the first silver wire and the second silver wire to form a silver wire, insulating layer, silver wire structure arranged in sequence.

Description

Technical Field

[0001] This application belongs to the field of flexible electronic devices, and in particular relates to a memristor and its fabrication method. Background Technology

[0002] Flexible electronics technology refers to electronic devices or systems with multiple functions such as sensing, storage, logic computing, energy harvesting, regulation, and feedback signals, based on sensor technology, new material technology, and microelectromechanical processing technology. With its ability to be fitted and stretched, it has broad application prospects in fields such as information, defense, medicine, and energy, and has powerfully promoted the transformation of industrial technology and the progress of society.

[0003] With the continuous development of flexible electronics technology, wearable and wearable electronic components (including chips) are an important development direction for flexible electronics. Memristors are the most basic storage units in chips. By controlling the change of current, the resistance value of a memristor can be changed, making it a non-linear resistive device with memory function.

[0004] Wearable memristors are currently a key research area. Hagyoul Bae et al. disclosed a braided memristor based on Al / pEGDMA-coated cotton thread, but its system is relatively complex and costly. How to achieve low-cost and simple fabrication of memristors is an urgent problem to be solved. Summary of the Invention

[0005] In order to improve or solve at least one of the problems mentioned in the background art, this application provides a memristor and a method for fabricating the same.

[0006] The memristor includes a first silver wire, a second silver wire, and an insulating layer, wherein the insulating layer is silver oxide and is sandwiched between the first silver wire and the second silver wire.

[0007] In at least one embodiment, the insulating layer is disposed on the circumferential surface of one of the first silver wire and the second silver wire.

[0008] In at least one embodiment, the insulating layer is disposed at the intersection of the first silver wire and the second silver wire.

[0009] In at least one embodiment, the insulating layer is provided on the peripheral surface of both the first silver wire and the second silver wire.

[0010] In at least one embodiment, the memristor includes a plurality of first silver wires and a plurality of second silver wires, the plurality of first silver wires and the plurality of second silver wires being arranged in a braided memristor array.

[0011] In at least one embodiment, the first silver wire and the second silver wire are 3 to 5 centimeters long and 10 to 20 micrometers in diameter.

[0012] In at least one embodiment, the thickness of the insulating layer is 80 to 200 nanometers.

[0013] The memristor in the method for fabricating the memristor provided in this application is the memristor as described above, and the method for fabricating the memristor includes:

[0014] Provide the first silver wire and the second silver wire;

[0015] The first silver wire and / or the second silver wire are surface treated to obtain the insulating layer; and

[0016] The first silver wire and the second silver wire are stacked to form a structure in which the first silver wire, the insulating layer, and the second silver wire are arranged in sequence.

[0017] In at least one embodiment, the surface treatment method for the first silver wire and / or the second silver wire is plasma surface treatment or ultraviolet ozone surface treatment.

[0018] In at least one embodiment, during the plasma surface treatment process, the oxygen flow rate is controlled at 30–90 standard milliliters / minute, the power of the plasma equipment is controlled at 50–200 watts, and the plasma surface treatment time is controlled at 1–3 seconds.

[0019] During the ultraviolet ozone surface treatment process, the power of the ozone equipment is controlled between 50 and 200 watts, and the ultraviolet ozone surface treatment time is controlled between 20 and 40 minutes.

[0020] The memristor provided in this application uses silver oxide as the insulating layer and silver as the electrode layer, and the entire system is based on silver. The memristor exhibits a high on / off ratio, low operating voltage, and high cycle stability. The memristor fabricated using the method proposed in this application has the advantages of good flexibility, low cost, and simple fabrication. Attached Figure Description

[0021] Figure 1 A schematic diagram of the structure of a memristor according to an embodiment of this application is shown.

[0022] Figure 2 A schematic diagram of a memristor with a braided structure according to an embodiment of this application is shown.

[0023] Figure 3 A schematic diagram of the electrical performance of a memristor according to an embodiment of this application is shown.

[0024] Figure 4A schematic diagram of the electrical performance of a memristor according to an embodiment of this application is shown at different scanning voltage ranges.

[0025] Figure 5 A schematic diagram of the electrical performance of a memristor according to an embodiment of this application is shown, cyclically operating within a single scan voltage range.

[0026] Explanation of reference numerals in the attached figures

[0027] 1. First silver wire; 2. Second silver wire; 3. Insulation layer. Detailed Implementation

[0028] Exemplary embodiments of this application are described below with reference to the accompanying drawings. It should be understood that these specific descriptions are for teaching those skilled in the art how to implement this application only, and are not intended to exhaustively describe all possible methods of this application, nor to limit the scope of this application.

[0029] This application provides a memristor and a method for fabricating the same. Figure 1 As shown, the memristor may include a first silver wire 1 and a second silver wire 2. An insulating layer 3, which is silver oxide, is disposed on the peripheral surface of the first silver wire 1 and / or the second silver wire 2. In one embodiment of this application, the insulating layer 3 is disposed on the peripheral surface of one of the first silver wire 1 and the second silver wire 2, for example, on the peripheral surface of the first silver wire 1. The first silver wire 1 and the second silver wire 2 are stacked together, equivalent to silver oxide sandwiched between two layers of silver wire, giving the memristor a sandwich structure. The first silver wire 1 and the second silver wire 2 can be configured as electrodes for applying voltage, forming a simple two-terminal memristor.

[0030] In one embodiment of this application, an insulating layer 3 is provided on the peripheral surface of both the first silver wire 1 and the second silver wire 2. In another embodiment of this application, the insulating layer 3 is provided only at the intersection of the first silver wire 1 and the second silver wire 2. It is understood that, for the sake of simplicity in manufacturing, the insulating layer 3 can be provided on the entire peripheral surface of the silver wires (first silver wire 1 and / or second silver wire 2).

[0031] like Figure 2 As shown, multiple first silver wires 1 and multiple second silver wires 2 can also form a memristor array through horizontal and vertical braiding. The braiding method is simple, greatly simplifying the manufacturing process (no passivation, vias, etc. are required). Furthermore, the braiding can be done in a denser pattern to improve the integration density of the memristor.

[0032] The resistive switching principle of the memristor in this application can be explained as follows: when no voltage is applied, the transport of channel carriers (silver ions) is not activated, the current is very small, and it is in a high-resistivity state. See also Figure 3 When the voltage is 0V, the current is approximately 10. -9A. When a voltage is applied to the first silver wire 1 and the second silver wire 2, the silver undergoes an oxidation reaction to form silver ions. These silver ions diffuse towards the silver wire connected to the negative electrode, creating an electric field with a concentration gradient. This continues until the conductive filament formed by the silver ions completes its circuit, at which point the memristor enters a low-resistance state, equivalent to the "writing" process. (See also...) Figure 3 When the voltage is 0.5V, the current is approximately 10. -4 A. As the voltage continues to increase, the Joule heat generated in the structure hinders carrier migration, resulting in a saturation state (i.e., the current increases to a certain value and then stops increasing). When a reverse voltage is applied to the first silver line 1 and the second silver line 2, silver ions are reduced to silver, the number of conductive silver ions decreases, the resistance increases and the current decreases, and the memristor returns to a high-resistance state, which is equivalent to the "erasure" process.

[0033] This application proposes using silver oxide as the insulating layer 3. Silver oxide offers relatively low resistance to the diffusion of silver ions, facilitating resistive state transitions in the memristor at lower voltages and reducing power consumption. For example, the memristor provided in this application can achieve resistive state transitions at voltages below 1V. Furthermore, it can be seen that the memristor provided in this application exhibits significant hysteresis and a high switching efficiency.

[0034] like Figure 4 As shown, the inventors tested the electrical performance of the memristor at different scan voltages, such as -1 to 1V, -0.8 to 0.8V, -0.5 to 0.5V, and -0.4 to 0.4V. It can be seen that the memristor proposed in this application can adapt to a wide voltage range and is suitable for various applications. As the scan voltage decreases (e.g., switching from -1 to 1V to -0.8 to 0.8V), the voltage window becomes slightly smaller.

[0035] like Figure 5 As shown, the inventors tested the cycle stability of the memristor. Figure 5 The graph shows the electrical performance parameters under the same scanning voltage, for example, -0.5 to 0.5V, after 5, 10, 15, 20, 25, 30, 35, 40, and 45 cycles. It can be seen that the memristor proposed in this application has stable performance.

[0036] The method for fabricating a memristor provided in this application includes the following steps:

[0037] Provides first silver wire 1 and second silver wire 2;

[0038] The first silver wire 1 and / or the second silver wire 2 are subjected to plasma surface treatment or ultraviolet ozone surface treatment to obtain the insulating layer 3; and

[0039] The first silver wire 1 and the second silver wire 2 are stacked together through the insulating layer 3 to form a memristor structure with silver wires, an insulating layer, and the two ends of the silver wires arranged in sequence.

[0040] Furthermore, multiple first silver wires 1 and multiple second silver wires 2 can be woven together horizontally and vertically to form a memristor array.

[0041] Preferably, the first silver wire 1 and the second silver wire 2 can be commercially available silver wires. Before surface treatment, the silver wires can be ultrasonically washed with acetone, ethanol, and deionized water for, for example, 5 minutes each, and then dried. The length of the first silver wire 1 and the second silver wire 2 can be, for example, 3 to 5 cm, and the diameter can be, for example, 10 to 20 μm.

[0042] Preferably, when the first silver wire 1 is surface-treated by plasma, the oxygen flow rate can be controlled at 30–90 sccm (standard milliliters / minute), the power of the plasma device can be controlled at 50–200 W, and the time can be controlled at 1–3 s. When the first silver wire 1 is surface-treated by ultraviolet ozone, the power of the ozone device can be controlled at 50–200 W, and the time can be controlled at 20–40 min. The thickness of the silver oxide layer 3 as the insulating layer can be 80–200 nm, preferably 100 nm.

[0043] Preferably, the two ends of the surface-treated (insulating layer provided) silver wire (e.g., the first silver wire 1) can be left untreated and exposed, which facilitates the application of voltage to the memristor.

[0044] The memristor proposed in this application is based on a silver system, and an insulating layer can be obtained by processing the periphery of the silver wire, which makes the overall fabrication process of the memristor simple and flexible.

[0045] In summary, the memristor proposed in this application possesses advantages such as high on / off ratio, low operating voltage, high cycle stability, simple fabrication, low cost, and good flexibility, thus broadening the application fields of flexible electronics. It not only provides theoretical guidance and practical basis for the design and development of novel memristors for chips, but also plays a significant role in promoting breakthroughs in chip computing power and the development of the chip industry.

[0046] The above description is the preferred embodiment of this application. It should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A method for fabricating a memristor, characterized in that, The memristor includes a first silver wire (1), a second silver wire (2), and an insulating layer (3). The insulating layer (3) is silver oxide and is sandwiched between the first silver wire (1) and the second silver wire (2). When a voltage is applied to the first silver wire (1) and the second silver wire (2), the memristor can undergo a corresponding resistance state change. The memristor includes multiple first silver wires (1) and multiple second silver wires (2), which are arranged in a horizontally and vertically braided memristor array. The thickness of the insulating layer (3) is 80~200 nanometers. The preparation method includes: Provide the first silver wire (1) and the second silver wire (2); The first silver wire (1) and / or the second silver wire (2) are surface treated to obtain the insulating layer (3); and The first silver wire (1) and the second silver wire (2) are stacked to form a structure in which the first silver wire (1), the insulating layer (3), and the second silver wire (2) are arranged in sequence. The surface treatment method for the first silver wire (1) and / or the second silver wire (2) is plasma surface treatment or ultraviolet ozone surface treatment. The insulating layer (3) is disposed on the circumferential surface of one of the first silver wire (1) and the second silver wire (2), or, The insulating layer (3) is provided on the circumferential surface of both the first silver wire (1) and the second silver wire (2).

2. The method for fabricating a memristor according to claim 1, characterized in that, The length of the first silver wire (1) and the second silver wire (2) is 3-5 cm and the diameter is 10-20 micrometers.

3. The method for fabricating a memristor according to claim 1, characterized in that, During the plasma surface treatment process, the oxygen flow rate is controlled at 30-90 standard milliliters / minute, the power of the plasma equipment is controlled at 50-200 watts, and the plasma surface treatment time is controlled at 1-3 seconds. During the ultraviolet ozone surface treatment process, the power of the ozone equipment is controlled between 50 and 200 watts, and the ultraviolet ozone surface treatment time is controlled between 20 and 40 minutes.

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