Nozzle unit, liquid processing apparatus, and liquid processing method

Abstract

The present application provides a nozzle unit, a liquid processing apparatus, and a liquid processing method. The uniformity of temperature distribution in a substrate plane is improved. A nozzle unit according to a technical solution of the present disclosure is a unit for a liquid processing apparatus that applies liquid processing using a solution to a substrate. The nozzle unit includes a gas nozzle having a discharge flow path through which a gas flows and a discharge port that discharges the gas flowing in the discharge flow path toward a surface of the substrate. The discharge port is formed to extend in a first direction along the surface. The width of the discharge flow path in the first direction increases as it approaches the discharge port, so that the gas from the discharge port is discharged radially.

Description

Technical Field

[0001] This disclosure relates to nozzle units, liquid treatment devices, and liquid treatment methods. Background Technology

[0002] Patent Document 1 discloses a developing apparatus configured to develop a resist film formed on the surface of a substrate by supplying a developing solution to the surface of the substrate. The developing apparatus includes: a blower that blows air adjusted to a predetermined temperature upward toward the substrate; and a temperature regulator that maintains the chuck device and the developing solution supply pipe at a predetermined temperature by circulating temperature-controlled water adjusted to a predetermined temperature.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2004-274028 Summary of the Invention

[0004] The problem the invention aims to solve

[0005] This disclosure provides a nozzle unit and a liquid treatment apparatus that can improve the uniformity of temperature distribution within a substrate surface.

[0006] Solution for solving the problem

[0007] The nozzle unit disclosed herein is a unit for a liquid treatment apparatus that applies a solution to a substrate. The nozzle unit includes a gas nozzle having: an ejection flow path for gas flow; and an ejection outlet for ejecting the gas flowing through the ejection flow path toward the surface of the substrate. The ejection outlet is formed to extend in a first direction along the surface. The width of the ejection flow path in the first direction increases towards the ejection outlet, so that the gas from the ejection outlet is ejected radially.

[0008] Alternatively, the gas nozzle may be configured such that both ends of the nozzle in the first direction are visible when viewed from the first direction.

[0009] For the nozzle unit described above, the central portion of the surface of the nozzle outlet, including the opening edge, in the first direction may protrude toward the surface.

[0010] Alternatively, the nozzle unit may further include: a second gas nozzle having a second outlet that ejects a second gas toward the surface; and a drive unit that moves the gas nozzle and the second gas nozzle together along the surface.

[0011] For the above-mentioned nozzle unit, the flow rate of the gas ejected from the nozzle outlet may also be less than the flow rate of the second gas ejected from the second nozzle outlet.

[0012] Alternatively, the nozzle unit may further include a treatment liquid nozzle having a third spray outlet that sprays treatment liquid toward the surface, and the drive unit moves the gas nozzle, the second gas nozzle, and the treatment liquid nozzle together.

[0013] Alternatively, the gas nozzle and the treatment liquid nozzle may be positioned at different locations in a second direction orthogonal to the first direction and along the surface. The gas nozzle and the treatment liquid nozzle are configured such that the distance in the second direction between the arrival position of the gas from the gas nozzle on the surface and the arrival position of the treatment liquid from the treatment liquid nozzle on the surface is less than the distance in the second direction between the nozzle outlet and the third nozzle outlet.

[0014] Alternatively, in the second direction, the second gas nozzle and the processing liquid nozzle may be positioned at different locations. The second gas nozzle and the processing liquid nozzle are configured such that, when viewed from the first direction, the inclination of the spray direction of the processing liquid from the processing liquid nozzle relative to the surface is less than the inclination of the spray direction of the second gas from the second gas nozzle relative to the surface.

[0015] Alternatively, in the second direction, the gas nozzle, the second gas nozzle, and the treatment liquid nozzle may be arranged in the order of the gas nozzle, the second gas nozzle, and the treatment liquid nozzle.

[0016] The liquid treatment apparatus disclosed herein includes: the aforementioned nozzle unit; a substrate holding unit that holds the substrate with its surface facing upward and rotates it; and a control unit that controls the nozzle unit and the substrate holding unit. The control unit supplies gas to a region including a central portion of the surface by ejecting gas from the gas nozzle while the substrate is rotated using the substrate holding unit, in a manner where the direction extending from the gas arrival area on the surface intersects with the rotation direction of the substrate.

[0017] In a liquid treatment method disclosed herein, while maintaining the treatment liquid in a state of retention on a substrate, gas is supplied from above the treatment liquid to at least the area inside the periphery of the upper surface of the treatment liquid retained on the substrate in a radially diffused manner compared to the circumferential direction of the substrate.

[0018] Alternatively, during the process of supplying the gas to the processing liquid remaining on the substrate, the flow rate and velocity of the gas can be adjusted so that the surface of the substrate is not exposed due to the movement of the processing liquid caused by the supply of the gas.

[0019] The above-described liquid treatment method may also include a non-supply period during which the gas is not supplied, from the time the treatment liquid is formed on the entire substrate until the treatment liquid begins to be removed from the substrate.

[0020] Alternatively, the non-supply period can be set in the first half of the maintenance period.

[0021] Alternatively, the gas can be supplied while the substrate is rotated, and the gas is supplied to the substrate in such a way that it reaches a region that does not include the center of the substrate.

[0022] The effects of the invention

[0023] According to this disclosure, a nozzle unit and a liquid treatment apparatus are provided that can improve the uniformity of temperature distribution within a substrate surface. Attached Figure Description

[0024] Figure 1 This is a perspective view showing an example of a substrate processing system.

[0025] Figure 2 This is a side view that roughly represents an example of the interior of a substrate processing system.

[0026] Figure 3 This is a top view that roughly represents an example of the interior of a substrate processing system.

[0027] Figure 4 This is a schematic diagram illustrating an example of a liquid treatment unit.

[0028] Figure 5 This is a side view schematically representing an example of a nozzle unit.

[0029] Figure 6 This is another side view schematically representing an example of a nozzle unit.

[0030] Figures 7a-7c This is a schematic diagram illustrating an example of a gas nozzle.

[0031] Figures 8a-8c This is a schematic diagram showing other examples of gas nozzles.

[0032] Figures 9a-9cThis is a schematic diagram showing other examples of gas nozzles.

[0033] Figure 10 This is a block diagram illustrating an example of the functional structure of a controller.

[0034] Figure 11 This is a block diagram illustrating an example of the hardware configuration of a controller.

[0035] Figure 12 This is a flowchart illustrating an example of a liquid treatment method.

[0036] Figure 13a and Figure 13b This is a schematic diagram illustrating an example of a liquid treatment method.

[0037] Figure 14 This is a schematic diagram illustrating an example of a liquid treatment method.

[0038] Figure 15a and Figure 15b This is a schematic diagram illustrating an example of a liquid treatment method.

[0039] Figure 16a This is a diagram showing an example of the in-plane temperature distribution when no cooling gas is supplied. Figure 16b This is a diagram showing an example of the in-plane temperature distribution when cooling gas is supplied.

[0040] Figure 17 This is a chart representing an example of the deviation in the distribution of line widths within a plane.

[0041] Figure 18a and Figure 18b This is a diagram illustrating an example of the results obtained by measuring the temperature change on the surface of the workpiece W due to the supply of cooling gas to its surface.

[0042] Figure 19 This is a diagram illustrating an example of the results obtained by simulating the temperature change on the surface of a workpiece when the supply period of cooling gas is changed during the maintenance period.

[0043] Figure 20 This is a positional example of a result obtained by evaluating the correspondence between the proportion of the time period for supplying cooling gas within the overall maintenance period and the deviation of the linewidth of the anti-corrosion pattern on the workpiece surface.

[0044] Figure 21a This is a diagram showing an example of the in-plane linewidth (CD) distribution on the surface of a workpiece when the supply ratio of cooling gas is 45%. Figure 21bThis is a diagram showing an example of the in-plane linewidth (CD) distribution on the surface of a workpiece when the supply ratio of cooling gas is 63%. Figure 21c This is a diagram showing an example of the in-plane linewidth (CD) distribution on the surface of a workpiece when the supply ratio of cooling gas is 81%.

[0045] Figure 22a and Figure 22b This is a diagram illustrating an example of the results obtained by evaluating the extent to which the linewidth deviation of the corrosion-resistant pattern changes when the supply position of the cooling gas is altered. Detailed Implementation

[0046] The following describes various exemplary implementation methods.

[0047] An exemplary embodiment relates to a nozzle unit for a liquid treatment apparatus that applies a liquid treatment using a solution to a substrate. The nozzle unit includes a gas nozzle having: an ejection flow path for gas flow; and an ejection outlet for ejecting the gas flowing through the ejection flow path toward the surface of the substrate. The ejection outlet is formed to extend in a first direction along the surface. The width of the ejection flow path in the first direction increases towards the ejection outlet, so that the gas from the ejection outlet is ejected radially.

[0048] In this nozzle unit, gas from the outlet of the gas nozzle is ejected radially in a first direction extending from the outlet. Therefore, gas from the gas nozzle is supplied to a region on the surface of the substrate that is longer than the width in the first direction of the outlet. This allows the gas to be ejected in alignment with the center of the substrate. As a result, the central portion of the substrate, where the gas is supplied during liquid processing, is cooled compared to the periphery of the substrate. Consequently, the uniformity of the temperature distribution within the substrate surface can be improved.

[0049] Alternatively, the gas nozzle can be configured such that both ends of the nozzle outlet in the first direction are visible when viewed from the first direction. In this case, the increase in the length of the nozzle outlet in the first direction can be suppressed, and gas can be supplied to a wider area of ​​the surface. Therefore, the nozzle unit can be simplified.

[0050] Alternatively, the central portion of the surface of the nozzle, including the opening edge, protrudes towards the surface in the first direction. In this case, the difference in the length of the flow path leading to the surface including the opening edge within the opening surface is reduced. Therefore, the uniformity of the gas flow velocity within the surface including the opening edge can be improved.

[0051] Alternatively, the nozzle unit may further include: a second gas nozzle having a second outlet that ejects a second gas toward the surface; and a drive unit that moves the gas nozzle and the second gas nozzle together along the surface. In this case, since both nozzles can be moved using a single drive unit, the nozzle unit including the drive unit can be simplified.

[0052] Alternatively, the flow rate of the gas ejected from the first outlet may be less than the flow rate of the second gas ejected from the second outlet. In this case, the gas nozzle and the second gas nozzle can be used to match different processing purposes.

[0053] Alternatively, the nozzle unit may further include a treatment liquid nozzle having a third spray outlet that sprays treatment liquid toward the surface. Alternatively, the drive unit may move the gas nozzle, the second gas nozzle, and the treatment liquid nozzle together. In this case, since all three nozzles can be moved using a single drive unit, the nozzle unit including the drive unit can be simplified.

[0054] Alternatively, the gas nozzle and the treatment liquid nozzle can be positioned at different locations along a second direction orthogonal to the first direction and along the surface. Alternatively, the gas nozzle and the treatment liquid nozzle can be configured such that the distance in the second direction between the arrival position of the gas from the gas nozzle and the arrival position of the treatment liquid from the treatment liquid nozzle on the surface is less than the distance in the second direction between the nozzle outlet and the third nozzle outlet. In this case, the switching time between treatment using gas from the gas nozzle and treatment using treatment liquid from the treatment liquid nozzle can be shortened.

[0055] Alternatively, in the second direction, the second gas nozzle and the processing liquid nozzle can be positioned at different locations. Alternatively, the second gas nozzle and the processing liquid nozzle can be configured such that, when viewed from the first direction, the angle of the processing liquid ejected from the processing liquid nozzle relative to the surface is less than the angle of the second gas ejected from the second gas nozzle relative to the surface. In this case, the effect of the processing liquid ejected from the processing liquid nozzle on the surface of the substrate can be suppressed.

[0056] Alternatively, in the second direction, the gas nozzle, the second gas nozzle, and the processing liquid nozzle can be arranged in the order of gas nozzle, second gas nozzle, and processing liquid nozzle. In this case, the nozzle unit can be configured in a way that shortens the supply path of the gas supplied to the gas nozzle and the second gas nozzle.

[0057] An exemplary embodiment of the liquid treatment apparatus includes: the aforementioned nozzle unit; a substrate holding unit that holds and rotates a substrate with its surface facing upwards; and a control unit that controls the nozzle unit and the substrate holding unit. The control unit supplies gas to a region including a central portion of the surface by ejecting gas from the gas nozzle while the substrate is rotated using the substrate holding unit, such that the direction extending from the surface to the gas arrival area intersects with the rotation direction of the substrate. In this case, gas can be supplied to the central portion of the substrate in a manner that allows the gas to diffuse circumferentially, thus reducing the temperature of the central portion compared to the periphery of the substrate. Therefore, the temperature difference between the central and peripheral portions within the substrate surface can be reduced.

[0058] In one exemplary embodiment of the liquid processing method, while maintaining the processing liquid in a state of being retained on the substrate, gas is supplied from above the processing liquid to at least the region inside the periphery of the upper surface of the processing liquid retained on the substrate (the region within the processing liquid range excluding the periphery) in a radial direction rather than the circumferential direction of the processing liquid.

[0059] In the liquid treatment method described above, the substrate is cooled near the area where the gas is supplied by supplying gas. Here, by supplying gas in a radially diffused manner compared to the circumferential direction of the substrate, the central portion is cooled compared to the peripheral portion. Therefore, the uniformity of temperature distribution within the substrate surface can be improved.

[0060] Alternatively, during the process of supplying gas to the processing liquid remaining on the substrate, the gas flow rate and velocity can be adjusted so that the surface of the substrate is not exposed due to the movement of the processing liquid caused by the gas supply. In this case, appropriate localized cooling of the processed portion on the substrate, matching the temperature sensitivity of the chemical solution, can be performed to prevent adverse effects on the liquid treatment, such as the gas disturbing or damaging the film of the processing liquid due to its impact.

[0061] Alternatively, the period from when the processing liquid is formed on the entire substrate until the processing liquid begins to be removed from the substrate may include a non-supply period where no gas is supplied. In this case, by setting a non-supply period during the maintenance period, the cooling condition of the substrate by the gas can be adjusted. Therefore, the uniformity of the temperature distribution within the substrate surface can be improved.

[0062] Alternatively, the non-supply period can be set in the first half of the maintenance period. By setting the non-supply period in the first half of the maintenance period, the uniformity of temperature distribution within the substrate surface can be improved throughout the maintenance period.

[0063] Alternatively, gas can be supplied while the substrate is rotated, reaching a region on the substrate that does not include the center. When gas is supplied while the substrate is rotated, a difference in the amount of gas supplied may occur between the center and the periphery when the gas reaches the center of the substrate. Therefore, by adjusting the supply position so that the gas does not reach the center, more uniform cooling using the gas can be achieved.

[0064] Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description, the same reference numerals are used to denote the same elements or elements having the same function, and repeated descriptions are omitted. A portion of the drawings shows a rectangular coordinate system defined by the X-axis, Y-axis, and Z-axis. In the following embodiment, the Z-axis corresponds to the vertical direction, and the X-axis and Y-axis correspond to the horizontal direction.

[0065] [Substrate Processing System]

[0066] First, refer to Figures 1-3 The structure of substrate processing system 1 is described. Substrate processing system 1 includes coating and developing apparatus 2 (liquid processing apparatus) and exposure apparatus 3.

[0067] The coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the workpiece W. Furthermore, the coating and developing apparatus 2 is configured to perform a developing process on the resist film R. The exposure apparatus 3 is configured to transfer the workpiece W to the coating and developing apparatus 2 and to expose the surface Wa (see reference) formed on the workpiece W. Figure 4 The resist film R is exposed (pattern exposure). The exposure apparatus 3 can selectively irradiate the exposed portion of the resist film R with energy rays using methods such as immersion exposure.

[0068] The workpiece W to be processed is, for example, a substrate, or a substrate that has been formed with films or circuits by applying a prescribed process. As an example, the substrate included in workpiece W is a silicon-containing wafer. Workpiece W (substrate) can be formed in a circular shape or a plate shape other than a circle, such as a polygon. Workpiece W may have a notch obtained by partially removing parts. The notch can be, for example, a notch (a U-shaped, V-shaped, or other groove) or a straight section extending in a straight line (a so-called orientation plane). The workpiece W to be processed can be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or an intermediate obtained by applying a prescribed process to these substrates. The diameter of workpiece W can be, for example, approximately 200 mm to 450 mm.

[0069] Energy rays can be ionizing radiation or non-ionizing radiation. Ionizing radiation contains sufficient energy to ionize atoms and molecules. Examples of ionizing radiation include extreme ultraviolet (EUV), electron beams, ion beams, X-rays, alpha rays, beta rays, gamma rays, heavy particle rays, and proton rays. Non-ionizing radiation does not contain sufficient energy to ionize atoms and molecules. Examples of non-ionizing radiation include gamma rays, i-rays, KrF excimer lasers, ArF excimer lasers, and F2 excimer lasers.

[0070] (Coating and developing apparatus)

[0071] The coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the workpiece W before exposure processing using the exposure apparatus 3. Furthermore, the coating and developing apparatus 2 is configured to perform a developing process on the resist film R after exposure processing using the exposure apparatus 3.

[0072] like Figures 1-3 As shown, the coating and developing apparatus 2 includes: a carrier module 4, a processing module 5, an interface module 6, and a control device 100 (control unit). The carrier module 4, the processing module 5, and the interface module 6 are arranged in a horizontal direction.

[0073] The carrier module 4 includes a carrier platform 12 and a feed / discharge section 13. The carrier platform 12 supports a plurality of carriers 11. Each carrier 11 contains at least one workpiece W in a sealed state. An opening / closing door (not shown) for the workpiece W to enter and exit is provided on the side 11a of the carrier 11. The carrier 11 is detachably mounted on the carrier platform 12 with its side 11a facing the feed / discharge section 13.

[0074] The feed / output unit 13 is located between the carrier stage 12 and the processing module 5. For example... Figure 1 and Figure 3 As shown, the feed / discharge section 13 has multiple opening / closing doors 13a. When the carrier 11 is placed on the carrier platform 12, the opening / closing doors of the carrier 11 face the opening / closing doors 13a. By simultaneously opening the opening / closing doors 13a and the opening / closing doors on the side 11a, communication is established between the interior of the carrier 11 and the feed / discharge section 13. Figure 2 and Figure 3 As shown, the infeed / outfeed section 13 has a built-in conveying arm A1. The conveying arm A1 is configured to take the workpiece W out of the carrier 11 and hand it over to the processing module 5, and to receive the workpiece W from the processing module 5 and return it to the carrier 11.

[0075] like Figure 2 and Figure 3 As shown, processing module 5 includes processing components PM1 to PM4.

[0076] The processing component PM1 is configured to form a lower film on the surface of the workpiece W, and is also known as the BCT component. For example... Figure 3 As shown, the processing assembly PM1 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying arm A2 configured to convey a workpiece W relative to these units. The liquid treatment unit U1 of the processing assembly PM1 can, for example, be configured to apply a coating liquid for forming a lower layer film to the workpiece W. The heat treatment unit U2 of the processing assembly PM1 can, for example, be configured to perform a heat treatment to cure the coating film formed on the workpiece W using the liquid treatment unit U1 into a lower layer film. An anti-reflective (SiARC) film can be cited as an example of a lower layer film.

[0077] Processing assembly PM2 is configured to form an intermediate film (hard mask) on a lower film and is also called an HMCT assembly. Processing assembly PM2 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveyor arm A3 configured to convey a workpiece W relative to these units. The liquid treatment unit U1 of processing assembly PM2 can, for example, be configured to apply a coating liquid for intermediate film formation to the workpiece W. The heat treatment unit U2 of processing assembly PM2 can, for example, be configured to perform a heat treatment to cure the coating film formed on the workpiece W using the liquid treatment unit U1 to become an intermediate film. Examples of intermediate films include SOC (Spin On Carbon) films and amorphous carbon films.

[0078] Processing assembly PM3 is configured to form a thermosetting and photosensitive resist film R on an intermediate film, and is also referred to as a COT assembly. Processing assembly PM3 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveyor arm A4 configured to convey a workpiece W relative to these units. The liquid treatment unit U1 of processing assembly PM3 can, for example, be configured to apply a coating liquid (resist) for resist film formation to the workpiece W. The heat treatment unit U2 of processing assembly PM3 can, for example, be configured to perform a heat treatment (PAB: Pre-Applied Bake) to cure the coating film formed on the workpiece W using the liquid treatment unit U1 into the resist film R.

[0079] The resist solution contains either a positive or a negative resist material. A positive resist material is the resist material that melts in the exposed areas of the pattern and remains in the unexposed areas (light-shielding areas). A negative resist material is the resist material that melts in the unexposed areas (light-shielding areas) of the pattern and remains in the exposed areas.

[0080] Processing unit PM4, also known as a DEV unit, is configured to perform development processing on the exposed resist film. Processing unit PM4 includes a liquid treatment unit U1, a heat treatment unit U2, and a transport arm A5 configured to transport the workpiece W relative to these units. The liquid treatment unit U1 of processing unit PM4 is configured to apply development processing (liquid treatment) to the workpiece W using a solution such as a developer. For example, it can also be configured to form a resist pattern (not shown) by partially removing the resist film R. The heat treatment unit U2 of processing unit PM4 can be configured, for example, to perform heat treatment before development (PEB: Post Exposure Bake) and heat treatment after development (PB: Post Bake).

[0081] like Figure 2 and Figure 3 As shown, the processing module 5 includes a frame unit 14 located near the carrier module 4. The frame unit 14 extends vertically and has a plurality of chambers arranged vertically. A conveyor arm A6 is provided near the frame unit 14. The conveyor arm A6 is configured to move the workpiece W up and down between the chambers of the frame unit 14.

[0082] The processing module 5 includes a frame unit 14 located near the interface module 6. The frame unit 14 extends vertically and contains a plurality of small chambers arranged vertically.

[0083] Interface module 6 has a built-in conveyor arm A7, which is connected to exposure device 3. The conveyor arm A7 is configured to take out the workpiece W from the frame unit 15 and hand it over to the exposure device 3, and to receive the workpiece W from the exposure device 3 and return it to the frame unit 15.

[0084] (Liquid processing unit)

[0085] Next, refer to Figures 4-6 The liquid treatment unit U1 of the PM4 treatment component will be described in further detail. For example... Figure 4 As shown, the liquid treatment unit U1 includes a substrate holding section 20 (substrate holding unit), a supply section 30, a supply section 40, a cover member 70, and a blower B within the housing H. An exhaust section V1 is provided at the lower part of the housing H. This exhaust section V1 is configured to operate based on a signal from the control device 100, thereby venting gas from the housing H. The exhaust section V1 can be, for example, a damper capable of adjusting the exhaust volume according to the opening degree. By adjusting the exhaust volume from the housing H using the exhaust section V1, the temperature, pressure, humidity, etc., within the housing H can be controlled. The exhaust section V1 can also be controlled to continuously vent within the housing H during the liquid treatment of the workpiece W.

[0086] <Substrate Holding Section>

[0087] The substrate holding portion 20 is configured to hold and rotate the workpiece W. For example, the substrate holding portion 20 holds the workpiece W with its surface Wa facing upward and rotates it. The substrate holding portion 20 includes a rotating portion 21, a shaft 22, and a holding portion 23.

[0088] The rotating part 21 is configured to rotate the shaft 22 based on an action signal from the control device 100. The rotating part 21 is, for example, a power source such as an electric motor. A holding part 23 is provided at the top end of the shaft 22. A workpiece W with its surface Wa facing upward is placed on the holding part 23. The holding part 23 is configured to hold the workpiece W in a substantially horizontal position, for example, by means of adsorption. That is, the substrate holding part 20 rotates the workpiece W about a central axis (rotation axis) perpendicular to the surface Wa of the workpiece W while the workpiece W is in a substantially horizontal position. In this embodiment, the surface Wa of the workpiece W held in the substrate holding part 20 is along the X-Y plane.

[0089] <Supply Department>

[0090] The supply unit 30 is configured to supply a processing liquid L1 to the surface Wa of the workpiece W. The processing liquid L1 may be, for example, a developing solution. The supply unit 30 includes a supply mechanism 31, a drive mechanism 32, and a nozzle 33.

[0091] The supply mechanism 31 is configured to deliver the processing liquid L1 stored in a container (not shown) using a pump or other delivery mechanism (not shown) based on a signal from the control device 100. The drive mechanism 32 is configured to move the nozzle 33 in the vertical and horizontal directions based on a signal from the control device 100. The nozzle 33 is configured to spray the processing liquid L1 supplied by the supply mechanism 31 onto the surface Wa of the workpiece W.

[0092] <Supply Department>

[0093] The supply unit 40 is configured to supply a treatment liquid L2, a cooling gas G1 (gas), and a drying gas G2 (second gas) to the surface Wa of the workpiece W. The treatment liquid L2 can be, for example, a rinsing liquid (cleaning liquid). The cooling gas G1 and the drying gas G2 are not particularly limited; any gas is acceptable, but a non-reactive gas (e.g., nitrogen) is preferred. The temperature of the cooling gas G1 and the drying gas G2 can be approximately 20°C to 25°C. The supply unit 40 includes supply mechanisms 41A to 41C and a nozzle unit 43.

[0094] like Figure 4As shown, supply mechanism 41A is configured to deliver cooling gas G1 stored in a container (not shown) using a pump or other gas delivery mechanism (not shown) based on a signal from control device 100. Supply mechanism 41B is configured to deliver dry gas G2 stored in a container (not shown) using a pump or other gas delivery mechanism (not shown) based on a signal from control device 100. Supply mechanism 41C is configured to deliver processing liquid L2 stored in a container (not shown) using a pump or other liquid delivery mechanism (not shown) based on a signal from control device 100.

[0095] The nozzle unit 43 is configured to spray cooling gas G1, drying gas G2, and processing liquid L2 supplied by the supply mechanisms 41A to 41C onto the surface Wa of the workpiece W. Figure 5 As shown, the nozzle unit 43 includes: a holding arm 44, a drying gas nozzle 45, a cooling gas nozzle 46, a processing liquid nozzle 47, and a drive unit 49, which moves the holding arm 44 to move these nozzles. The parts of the nozzle unit 43 will be described below.

[0096] [Keep your arm]

[0097] The holding arm 44 is configured to hold the drying gas nozzle 45, the cooling gas nozzle 46, and the processing liquid nozzle 47. The holding arm 44 includes, for example, a horizontally extending portion 44a (in the X-axis direction of the illustration) and a vertically extending portion 44b. One end of the horizontal portion 44a can be connected to the drive portion 49 at a position that does not overlap with the workpiece W held in the substrate holding portion 20. The upper end of the vertical portion 44b is connected to the other end of the horizontal portion 44a. The vertical portion 44b extends from the top end of the horizontal portion 44a toward the surface Wa of the workpiece W downwards (in the -Z direction). The lower end of the vertical portion 44b is separated from the surface Wa of the workpiece W in the vertical direction. A gas flow path 42a for the cooling gas G1 supplied from the supply mechanism 41A can be provided inside the holding arm 44. Furthermore, a gas flow path 42b for the dry gas G2 supplied by the supply mechanism 41B and a processing liquid flow path 42c for the processing liquid L2 supplied by the supply mechanism 41C can also be provided inside the holding arm 44.

[0098] [Drying gas nozzle]

[0099] The drying gas nozzle 45 (the second gas nozzle) is configured to spray drying gas G2 toward the surface Wa of the workpiece W. The drying gas nozzle 45 can spray the drying gas G2 from above the surface Wa in a direction that is approximately perpendicular to the surface Wa. When viewed from the Y-axis and X-axis directions respectively, the spray direction of the drying gas G2 from the drying gas nozzle 45 is approximately perpendicular to the surface Wa.

[0100] exist Figure 5In the example shown, the drying gas nozzle 45 is located at the lower end of the vertical portion 44b of the retaining arm 44. The drying gas nozzle 45 has a gas flow path 45a extending vertically. The gas flow path 45a is continuous with a gas flow path 42b that passes through the horizontal portion 44a of the retaining arm 44 and extends towards the lower end of the vertical portion 44b. The drying gas nozzle 45 includes an outlet 45b (second outlet), which ejects the drying gas G2 supplied to the gas flow path 45a via the gas flow path 42b toward the surface Wa. The outlet 45b is located, for example, on the lower end face of the drying gas nozzle 45 and is open thereon. When viewed from the ejection direction of the drying gas G2 (the Z-axis direction shown in the figure), the shape (outline) of the outlet 45b can be circular.

[0101] [Cooling gas nozzle]

[0102] The cooling gas nozzle 46 is configured to spray cooling gas G1 toward the surface Wa of the workpiece W. The cooling gas nozzle 46 sprays the cooling gas G1 radially from above the surface Wa toward the surface Wa. For example, as... Figure 6 As shown, when viewed from the X-axis direction, the cooling gas nozzle 46 ejects cooling gas G1 at multiple different angles relative to the surface Wa. The cooling gas nozzle 46 can uniformly eject cooling gas G1 within a radial ejection range. On the other hand, the cooling gas nozzle 46 can also eject cooling gas G1 in a direction inclined relative to the surface Wa when viewed from the Y-axis direction.

[0103] exist Figure 5 and Figure 6 In the example shown, the cooling gas nozzle 46 is fixed to the lower end of the horizontal portion 44a of the holding arm 44, near the vertical portion 44b. The cooling gas nozzle 46 has a gas flow path 51 that is continuous with a gas flow path 42a through which cooling gas G1 supplied from the supply mechanism 41A flows. The gas flow path 42a opens towards the lower end of the horizontal portion 44a of the holding arm 44. The gas flow path 51 is formed to be continuous with the opening at the lower end of the gas flow path 42a. Furthermore, the cooling gas nozzle 46 includes an outlet 52 that ejects the cooling gas G1 flowing through the gas flow path 51 toward the surface Wa of the workpiece W. For example, the cooling gas nozzle 46 has a block-shaped main body 53 in which the gas flow path 51 is formed internally, and the outlet 52 opens on at least one surface included in the main body 53.

[0104] The gas flow path 51 includes a supply flow path 55 located on the upstream side and an ejection flow path 56 located on the downstream side. In this disclosure, the terms "upstream" and "downstream" are used based on the flow of gas and liquid. One end of the supply flow path 55 on the upstream side is connected to a gas flow path 42a disposed inside the horizontal portion 44a of the retaining arm 44, and the other end of the supply flow path 55 on the downstream side is connected to one end of the ejection flow path 56 on the upstream side. An ejection outlet 52 is provided at the other end of the ejection flow path 56 on the downstream side. The supply flow path 55 supplies, for example, cooling gas G1, which flows vertically downwards. The ejection flow path 56 allows the cooling gas G1 to flow along the extension direction of an inclined surface D0 at a predetermined angle relative to the surface Wa of the workpiece W, reaching the ejection outlet 52. The ejection flow path 56, while allowing the cooling gas G1 to flow in one direction along the inclined surface D0, also radially expands the flow direction of the cooling gas G1. Hereinafter, the direction in which the cooling gas G1 flows before it expands radially in the ejection flow path 56 will be referred to as "direction D1". This direction D1 extends along the inclined surface D0. For example, when viewed from the Y-axis direction, direction D1 is inclined relative to the surface Wa of the workpiece W.

[0105] Reference Figures 7a-7c The shape of the nozzle (particularly the shape of the gas flow path 51) used to radially eject cooling gas G1 from the cooling gas nozzle 46 relative to the surface Wa of the workpiece W will be described. Figures 7a-7c The image shows the tip portion of the cooling gas nozzle 46 (the portion near the nozzle outlet 52), and illustrates an example where the tip portion is formed in a cuboid shape. Furthermore, front, bottom, and side views of the tip portion are shown with direction D1 aligned with the vertical direction of the paper and with direction D1 aligned with a direction perpendicular to the paper. Additionally, direction D2 is defined as the direction orthogonal to both the Y-axis and direction D1 (see reference). Figure 7b and Figure 7c ).

[0106] The ejection flow path 56 includes a first region 57 located on the upstream side and a second region 58 located on the downstream side. The first region 57 allows cooling gas G1 supplied from the gas flow path (gas flow path 42b and supply flow path 55) located on the upstream side to flow along direction D1. The first region 57 is composed of a pair of opposing side surfaces 57a and 57b and a pair of opposing wall surfaces 57c and 57d. The side surfaces 57a and 57b are located at opposite ends in the Y-axis direction and extend along directions D1 and D2, and are parallel to each other. The wall surfaces 57c and 57d extend along the Y-axis direction and direction D1, and are parallel to each other. The wall surfaces 57c and 57d are arranged opposite each other in direction D2. The first region 57 is formed by these side surfaces 57a and 57b and wall surfaces 57c and 57d. As an example, the cross-sectional shape of the first region 57 is a rectangle extending along the Y-axis direction. The cross-sectional area of ​​region 57 in the Y-axis direction is approximately constant regardless of direction D1. In such region 57, cooling gas G1 flows along direction D1.

[0107] The second region 58 guides the cooling gas G1 supplied from the first region 57 toward the nozzle 52. The second region 58 is configured such that the cooling gas G1 flowing along direction D1 in the first region 57 is radially distributed in the Y-axis direction. The second region 58 is composed of a pair of opposing inclined surfaces 58a and 58b and a pair of opposing wall surfaces 58c and 58d. Wall surfaces 58c and 58d are continuous with wall surfaces 57c and 57d, respectively, and extend along the Y-axis direction and direction D1, and are parallel to each other. Therefore, the width of the second region 58 along direction D2 is the same as the width of the first region 57 along direction D2 (see reference). Figure 7c The extension directions of walls 57c, 57d and 58c, 58d correspond to the extension direction of inclined surface D0.

[0108] Inclined surfaces 58a and 58b are located at both ends of the second region 58 in the Y-axis direction. The upstream end of inclined surfaces 58a and 58b is connected to the side surfaces 57a and 57b respectively, and the downstream end of each inclined surface 58a and 58b is connected to the nozzle 52 (both ends of the nozzle 52 in the Y-axis direction).

[0109] Inclined surfaces 58a and 58b are inclined relative to direction D1. Specifically, inclined surface 58a is inclined outward relative to direction D1 in such a way that the distance between it and inclined surface 58b increases as it approaches the nozzle 52. Inclined surface 58b is inclined outward relative to direction D1 in such a way that the distance between it and inclined surface 58a increases as it approaches the nozzle 52. Inclined surfaces 58a and 58b are inclined outward in a direction away from the axis Ax of the cooling gas nozzle 46 as they proceed from the continuous portion between them and the sides 57a and 57b toward the nozzle 52. The axis Ax of the cooling gas nozzle 46 is an imaginary axis along direction D1 and passing through the nozzle 52, viewed from direction D1. As described above, at least the inclined surfaces 58a and 58b of the second region 58 are formed in an inverted cone shape with the interval between them increasing as they proceed toward the nozzle 52. As a result, the width of the second region 58 (ejection path 56) in the Y-axis direction increases as it approaches the nozzle 52, so that the cooling gas G1 from the nozzle 52 is ejected radially in the Y-axis direction. In addition, the tilt angles (tilt angles relative to direction D1) of the inclined surfaces 58a and 58b can be set to be approximately the same.

[0110] The nozzle 52 of the cooling gas nozzle 46 is formed to extend in one direction along the surface Wa. In this disclosure, a shape extending in one direction means a shape whose width in one direction is greater than its width in a direction orthogonal to that direction. In one example, the nozzle 52 is shaped such that one direction is the length direction (major axis) and the other direction is the width direction (minor axis). Specifically, the nozzle 52 is a rectangular shape, a rounded rectangle with rounded ends in the length direction, an ellipse, or a shape similar to these shapes. For example, as... Figures 7a-7c As shown, the nozzle 52 has a shape that extends along the Y-axis direction (first direction). Figures 7a-7c In the example shown, the nozzle 52 is a rectangular slit extending at least along the Y-axis direction. As an example, the length of the nozzle 52 in one direction (Y-axis direction) is proportional to the length of the nozzle in a direction orthogonal to another direction (…). Figure 7b The length ratio in the direction orthogonal to the Y-axis (D2) is set to 100:1 to 10:1. Cooling gas G1 is supplied from the ejection flow path 56 relative to the ejection outlet 52 as described above.

[0111] for Figures 7a-7c The illustrated cooling gas nozzle 46 has an outlet 52 that is visible when viewed from direction D1 (when viewed from downstream of the gas flowing along direction D1). For example, as... Figure 7b and Figure 7cAs shown, a bottom surface 61 can be provided on the main body 53 of the cooling gas nozzle 46, which is opposite to the surface Wa of the workpiece W. At this time, the nozzle outlet 52 is provided on the bottom surface 61. The nozzle outlet 52 is formed to extend from one end of the bottom surface 61 to the other end when viewed from the direction D1 along the Y-axis.

[0112] The nozzle 52 can also be formed such that both ends of the nozzle 52 are visible when viewed from the Y-axis direction. To explain in more detail, the nozzle 52 is formed such that portions 52a and 52b of the nozzle 52, which are respectively connected to the inclined surfaces 58a and 58b of the ejection flow path 56 (second region 58), are visible when viewed from the Y-axis direction. Furthermore, "portions 52a and 52b are visible when viewed from the Y-axis direction" means that portion 52a is visible from one orientation of the Y-axis direction, and portion 52b is visible from the other orientation of the Y-axis direction.

[0113] exist Figures 7a-7c In the example shown, the surface formed by including the opening edge of the nozzle 52 (hereinafter referred to as the "opening surface") includes an opening bottom surface orthogonal to direction D1 and a pair of opening side surfaces connected to the opening bottom surface and opposite to each other in the Y-axis direction. The opening edge of the nozzle 52 refers to the ridge line connecting the outer surface of the main body 53 and the nozzle 52 (the end of the ejection flow path 56), and the opening surface refers to an imaginary surface that includes all of the ridge line. For example, in addition to the bottom surface 61 mentioned above, the nozzle 52 of the cooling gas nozzle 46 also opens on the side surfaces 62a and 62b, which are connected to the bottom surface 61 and are oriented opposite to each other in the Y-axis direction. In this case, the portion of the ejection flow path 56 downstream of the inclined surfaces 58a and 58b extends through the main body 53 in the Y-axis direction. For example, on each side surface 62a and 62b, the nozzle 52 is formed to extend along direction D1 from the connection portion between it and the bottom surface 61.

[0114] Due to the aforementioned structure, the cooling gas G1 flowing into the gas flow path 51 of the cooling gas nozzle 46 is radially ejected from the outlet 52 via the first region 57 and the second region 58 of the ejection flow path 56. As a result, the cooling gas G1 is ejected from above the surface Wa relative to the surface Wa. As an example, such as... Figure 6 As shown, the cooling gas nozzle 46 sprays cooling gas G1 in a specific direction at multiple angles within a specified angle range (e.g., -45° to +45°) relative to the axis Ax.

[0115] Furthermore, the shape of the nozzle 52 of the cooling gas nozzle 46 is not limited to the examples described above. The opening surface of the nozzle 52, including the opening edge, can also be formed such that the central portion of the opening surface in the Y-axis direction protrudes toward the surface Wa. More specifically, the central portion of the opening surface in the Y-axis direction may protrude toward the surface Wa compared to the two ends of the opening surface in the Y-axis direction. In this case, both ends of the nozzle 52 in the Y-axis direction are also visible when viewed from the Y-axis direction.

[0116] For example, such as Figures 8a-8c As shown, the bottom surface 61 of the main body 53 is curved such that its central portion in the Y-axis direction protrudes from the ends of the inclined surfaces 58a and 58b of the second region 58 toward the surface Wa. In this example, the opening surface of the nozzle 52, including the opening edge, is curved such that its central portion in the Y-axis direction protrudes toward the surface Wa. One end of the bottom surface 61 in the Y-axis direction (part 52a of the nozzle 52) is connected to the inclined surface 58a, and the other end of the bottom surface 61 in the Y-axis direction (part 52b of the nozzle 52) is connected to the inclined surface 58b. In this case, the portions 52a and 52b of the nozzle 52 connected to the inclined surfaces 58a and 58b are also visible when viewed from the Y-axis direction. The portion of the ejection flow path 56 downstream of the inclined surfaces 58a and 58b extends through the main body 53 in the Y-axis direction. Alternatively, when viewed from the X-axis direction, the opening surface (bottom surface 61 of the main body 53) can be formed into a trapezoidal shape instead of a curved shape. In the case of a trapezoidal shape, the central portion of the opening face in the Y-axis direction (the portion corresponding to the upper base) also protrudes towards the surface Wa compared to the two ends of the opening face in the Y-axis direction.

[0117] Alternatively, the nozzle 52 can be formed in such a way that both ends of the nozzle 52 in the Y-axis direction are invisible when viewed from any direction in the Y-axis direction. For example, as... Figures 9a-9c As shown, the nozzle 52 may also be open on the bottom surface 61, but not on the sides 62a and 62b connected to the bottom surface 61. The portions of the nozzle 52 connected to the inclined surfaces 58a and 58b (parts 52a and 52b) are not visible when viewed from the Y-axis direction, but are visible when viewed from direction D1. In this case, the distance between the two ends of the nozzle 52 in the Y-axis direction is less than the distance in the Y-axis direction of the bottom surface 61. Furthermore, Figures 8a-8c The width of the nozzle 52 (the nozzle 52 with a curved opening surface) in the Y-axis direction can also be smaller than the length of the curved bottom surface 61 in the Y-axis direction.

[0118] exist Figures 7a to 9cIn any example, both the nozzle 52 and the ejection path 56 (their three-dimensional shapes) are symmetrical with respect to a plane (X-Z plane) that passes through the axis Ax and is perpendicular to the direction in which the nozzle 52 extends. The cooling gas G1 ejected from the cooling gas nozzle 46, which has the nozzle 52 and the ejection path 56, is ejected in a manner that expands outwards from the axis Ax towards both sides in the Y-axis direction. Thus, the cooling gas G1 from the cooling gas nozzle 46 (nozzle 52) is ejected radially, reaching the area extending along the Y-axis on the surface Wa of the workpiece W.

[0119] Because the cooling gas G1 is ejected radially, therefore, as Figure 6 As shown, the width of the area reached by the cooling gas G1 on surface Wa (hereinafter referred to as the "reaching area AR") in the Y-axis direction is greater than the width of the nozzle 52 in the Y-axis direction. In the Y-axis direction, the distance between one end of the reaching area AR and the axis Ax is greater than the distance between one end of the nozzle 52 and the axis Ax, and the distance between the other end of the reaching area AR and the axis Ax is also greater than the distance between the other end of the nozzle 52 and the axis Ax. The width of the reaching area AR in the Y-axis direction is approximately the same as the distance between the point where the imaginary line ILa extending along the inclined surface 58a intersects with surface Wa and the point where the imaginary line ILb extending along the inclined surface 58b intersects with surface Wa. The width of the reaching area AR in the Y-axis direction can be less than the radius of the circular workpiece W. In one example, the aforementioned width of the reaching area AR can be 0.4 to 0.8 times, 0.5 to 0.7 times, or 0.55 to 0.65 times the radius of the workpiece W.

[0120] return Figure 5 Since the drying gas nozzle 45 and the cooling gas nozzle 46 are interconnected by a retaining arm 44, when the retaining arm 44 moves, the drying gas nozzle 45 and the cooling gas nozzle 46 move together. Figure 5 As shown, in the X-axis direction (second direction), the drying gas nozzle 45 and the cooling gas nozzle 46 are positioned at different locations. When viewed from the Y-axis direction, the drying gas nozzle 45 and the cooling gas nozzle 46 are configured such that the distance in the X-axis direction between the arrival position of the drying gas G2 from the drying gas nozzle 45 at the surface Wa of the workpiece W and the arrival position (arrival area AR) of the cooling gas G1 from the cooling gas nozzle 46 at the surface Wa is less than the distance in the X-axis direction between the outlet 45b of the drying gas nozzle 45 and the outlet 52 of the cooling gas nozzle 46.

[0121] In one example, when viewed from the Y-axis direction, the imaginary line IL1 extending along the ejection direction of cooling gas G1 from cooling gas nozzle 46 and the imaginary line IL2 extending along the ejection direction of dry gas G2 from dry gas nozzle 45 intersect near surface Wa (e.g., surface Wa). Thus, with nozzle unit 43 in a fixed position, when dry gas G2 and cooling gas G1 are ejected from dry gas nozzle 45 and cooling gas nozzle 46 respectively, when viewed from the Y-axis direction, the arrival area (arrival position) of dry gas G2 at surface Wa overlaps with the arrival area AR of cooling gas G1 from cooling gas nozzle 46 at surface Wa.

[0122] like Figure 6 As shown, when viewed from the X-axis direction, the drying gas nozzle 45 is arranged to overlap with the cooling gas nozzle 46. For example, the position of the drying gas nozzle 45 in the Y-axis direction is approximately the same as the center (axis Ax) of the cooling gas nozzle 46 in the Y-axis direction. In this case, when viewed from the X-axis direction, the arrival area (arrival position) of the drying gas G2 from the drying gas nozzle 45 at surface Wa is approximately the same as the center of the arrival area AR of the cooling gas G1 from the cooling gas nozzle 46 at surface Wa. Alternatively, the position of the drying gas nozzle 45 in the Y-axis direction may differ from the center (axis Ax) of the cooling gas nozzle 46. In this case, when viewed from the X-axis direction, the arrival area (arrival position) of the drying gas G2 from the drying gas nozzle 45 at surface Wa is offset relative to the center of the arrival area AR of the cooling gas G1 from the cooling gas nozzle 46 at surface Wa.

[0123] The cooling gas nozzle 46 and the drying gas nozzle 45 can also be configured such that the flow rate of the cooling gas G1 ejected from the outlet 52 of the cooling gas nozzle 46 is less than the flow rate of the drying gas G2 ejected from the outlet 45b of the drying gas nozzle 45. For example, the cooling gas nozzle 46 and the drying gas nozzle 45 can be configured such that approximately the same flow rate (flow rate per unit time) of gas is supplied to the cooling gas nozzle 46 and the drying gas nozzle 45 respectively, and the opening area of ​​the outlet 52 is larger than the opening area of ​​the outlet 45b. Alternatively, the supply mechanisms 41A and 41B can be controlled by the control device 100 so that the flow rate of the cooling gas G1 supplied from the supply mechanism 41A to the cooling gas nozzle 46 is less than the flow rate of the drying gas G2 supplied from the supply mechanism 41B to the drying gas nozzle 45.

[0124] The cooling gas nozzle 46 and the drying gas nozzle 45 can also be configured to facilitate the diffusion of the cooling gas G1 after it is ejected. For example, the cooling gas nozzle 46 and the drying gas nozzle 45 can be configured such that, when viewed from the direction extending from the nozzle 52, the distance between the nozzle 52 and the surface Wa along the ejection direction of the cooling gas G1 (along...) Figure 5 The distance of the imaginary line IL1 is longer than the distance between the nozzle 45b and the surface Wa along the ejection direction of the dry gas G2 (along the direction of ejection). Figure 5 The distance of the imaginary line IL2. Even when two gas nozzles with different purposes supply gas at approximately the same flow rate (flow rate per unit time), the structure (configuration) of the two gas nozzles can be used to adjust the pressure of the gas applied to the surface Wa (more specifically, the liquid surface of the treatment liquid on the surface Wa) to a level corresponding to the treatment purpose. Specifically, when supplying cooling gas G1, by increasing the distance between the nozzle and the surface, the pressure brought by cooling gas G1 can be reduced to a level that does not disturb the liquid surface of the treatment liquid or blow the treatment liquid away, so as not to expose the surface Wa of the workpiece W. On the other hand, when supplying drying gas G2, by decreasing the distance between the nozzle and the surface, the pressure brought by drying gas G2 can be increased to a level that causes the treatment liquid to flow or blow away, so as to form a drying area D (described in detail later) exposed on the surface Wa of the workpiece W.

[0125] When the same type of gas is used for cooling gas G1 and drying gas G2, the gas supply source can be shared. Specifically, a flow path connected to a gas supply source can branch into two flow paths. Alternatively, each of the two flow paths can be equipped with a valve that can be switched between open and closed states using the control device 100. One flow path is connected to gas flow path 42a, which guides cooling gas G1 to the outlet 52 of cooling gas nozzle 46, and the other flow path is connected to gas flow path 42b, which guides drying gas G2 to the outlet 45b of drying gas nozzle 45.

[0126] [Processing fluid nozzle]

[0127] The processing fluid nozzle 47 is configured to spray processing fluid L2 toward the surface Wa of the workpiece W. For example, the processing fluid nozzle 47 sprays the processing fluid L2 from above the surface Wa in a direction different from the vertical direction relative to the surface Wa. For instance, when viewed from the Y-axis direction, the spray direction of the processing fluid L2 from the processing fluid nozzle 47 is inclined relative to the surface Wa, and when viewed from the X-axis direction, this spray direction is approximately perpendicular to the surface Wa.

[0128] exist Figure 5In the example shown, the processing fluid nozzle 47 is connected to the retaining arm 44 by means of a retainer 48. The retainer 48 is connected to the side of the vertical portion 44b of the retaining arm 44, and the processing fluid nozzle 47 is held on the bottom surface closest to the direction along the surface Wa. A processing fluid flow path 42c for processing fluid L2 supplied from the supply mechanism 41C is connected to the processing fluid nozzle 47. The processing fluid flow path 42c can be provided, for example, inside the horizontal portion 44a of the retaining arm 44, outside the retaining arm 44, or inside the retainer 48. If the processing fluid flow path 42c is provided outside the retaining arm 44, a covering material or the like can also be provided to cover the processing fluid flow path 42c. A processing fluid flow path 47a extending along the ejection direction of the processing fluid L2 is provided in the processing fluid nozzle 47. The processing fluid flow path 47a is continuous from the end of the processing fluid flow path 42c provided in the retainer 48. Furthermore, the processing fluid nozzle 47 includes a nozzle outlet 47b (third nozzle outlet) for ejecting the processing fluid L2 supplied via the processing fluid flow path 47a toward the surface Wa. The nozzle outlet 47b is provided, for example, on the lower end face of the processing fluid nozzle 47 and is open on its lower end face. The shape (outline) of the nozzle outlet 47b can be circular when viewed from the ejection direction of the processing fluid L2.

[0129] Since the processing fluid nozzle 47 and the cooling gas nozzle 46 are interconnected via a retaining arm 44 and a retainer 48, the processing fluid nozzle 47 and the cooling gas nozzle 46 move together when the retaining arm 44 moves. In this embodiment, the drying gas nozzle 45, the cooling gas nozzle 46, and the processing fluid nozzle 47 are interconnected via a retaining arm 44, etc., therefore, these three nozzles move together as the retaining arm 44 moves. Figure 5 As shown, in the X-axis direction, the cooling gas nozzle 46, the drying gas nozzle 45, and the processing liquid nozzle 47 are arranged in different positions. For example, when viewed from the Y-axis direction, the cooling gas nozzle 46, the drying gas nozzle 45, and the processing liquid nozzle 47 are arranged sequentially.

[0130] The processing fluid nozzle 47 and the cooling gas nozzle 46 are configured such that, when viewed from the Y-axis direction, the distance in the X-axis direction between the arrival position of the processing fluid L2 from the processing fluid nozzle 47 at the surface Wa of the workpiece W and the arrival position (arrival area AR) of the cooling gas G1 from the cooling gas nozzle 46 at the surface Wa is less than the distance in the X-axis direction between the outlet 47b of the processing fluid nozzle 47 and the outlet 52 of the cooling gas nozzle 46. Furthermore, the same relationship applies to the arrival position and outlet between the processing fluid nozzle 47 and the drying gas nozzle 45.

[0131] In one example, when viewed from the Y-axis direction, the imaginary line IL3 extending along the ejection direction of the processing liquid L2 from the processing liquid nozzle 47 and the imaginary line IL1 extending along the ejection direction of the cooling gas G1 from the cooling gas nozzle 46 intersect near the surface Wa (e.g., surface Wa). Thus, when the nozzle unit 43 is in a fixed position, when viewed from the Y-axis direction, the arrival area (arrival position) of the processing liquid L2 from the processing liquid nozzle 47 and the arrival area AR of the cooling gas G1 from the cooling gas nozzle 46 at the surface Wa can overlap. In this embodiment, the nozzle unit 43 is configured such that, when viewed from the Y-axis direction, in addition to the aforementioned imaginary lines IL1 and IL3, the imaginary line IL2 extending along the ejection direction of the drying gas G2 from the drying gas nozzle 45 also intersects at a point on the surface Wa.

[0132] The drying gas nozzle 45 and the processing liquid nozzle 47 are configured such that, when viewed from the Y-axis direction, the inclination of the ejection direction of the processing liquid L2 from the processing liquid nozzle 47 relative to the surface Wa is less than the inclination of the ejection direction of the drying gas G2 from the drying gas nozzle 45 relative to the surface Wa. For example, when viewed from the Y-axis direction, the angle (or less than 90 degrees) between the imaginary line IL3 extending along the ejection direction of the processing liquid L2 and the surface Wa is less than the angle (or less than 90 degrees) between the imaginary line IL2 extending along the ejection direction of the drying gas G2 and the surface Wa. Furthermore, the same magnitude relationship applies to the inclination of the ejection direction of the drying gas G2 relative to the surface Wa and the inclination of the ejection direction of the cooling gas G1 from the cooling gas nozzle 46 relative to the surface Wa.

[0133] like Figure 6 As shown, the processing liquid nozzle 47 and the drying gas nozzle 45 can be configured at approximately the same position in the Y-axis direction. When viewed from the X-axis direction, the arrival area (arrival position) of the processing liquid L2 from the processing liquid nozzle 47 at surface Wa and the arrival area (arrival position) of the drying gas G2 from the drying gas nozzle 45 at surface Wa can be approximately the same as each other. Alternatively, they can be... Figure 6 The example shown is different; the processing liquid nozzle 47 and the drying gas nozzle 45 are positioned at different locations in the Y-axis direction. When viewed from the X-axis direction, the arrival area (arrival position) of the processing liquid L2 from the processing liquid nozzle 47 at surface Wa and the arrival area (arrival position) of the drying gas G2 from the drying gas nozzle 45 at surface Wa can be different.

[0134] When viewed from the X-axis direction, similarly to the drying gas nozzle 45, the processing liquid nozzle 47 can also be configured to overlap with the cooling gas nozzle 46. For example, the position of the processing liquid nozzle 47 in the Y-axis direction is approximately the same as the center position (axis Ax) of the cooling gas nozzle 46 in the Y-axis direction. In this case, when viewed from the X-axis direction, the arrival area (arrival position) of the processing liquid L2 from the processing liquid nozzle 47 at surface Wa is approximately the same as the center position of the arrival area AR of the cooling gas G1 from the cooling gas nozzle 46 at surface Wa. Alternatively, the position of the processing liquid nozzle 47 in the Y-axis direction may differ from the center position (axis Ax) of the cooling gas nozzle 46. In this case, when viewed from the X-axis direction, the arrival area (arrival position) of the processing liquid L2 from the processing liquid nozzle 47 at surface Wa is offset relative to the center position of the arrival area AR of the cooling gas G1 from the cooling gas nozzle 46 at surface Wa.

[0135] The minimum distance (in the Z-axis direction) between the outlet 45b of the drying gas nozzle 45 and the surface Wa can be greater than the minimum distance (in the Z-axis direction) between the outlet 47b of the treatment liquid nozzle 47 and the surface Wa. Similarly, the minimum distance (in the Z-axis direction) between the outlet 45b and the surface Wa can be greater than the minimum distance (in the Z-axis direction) between the outlet 52 of the cooling gas nozzle 46 and the surface Wa. The above configuration of the three nozzles is an example; however, the three nozzles can be configured arbitrarily.

[0136] [Drive Section]

[0137] The drive unit 49 is configured to move the holding arm 44 in the height direction and the horizontal direction (along the direction of the surface Wa of the workpiece W) based on signals from the control device 100. The drive unit 49 is connected to the base end of the horizontal portion 44a of the holding arm 44, as described above. The drive unit 49 may include a linear motion actuator that displaces the holding arm 44 in the direction extending from the outlet 52 of the cooling gas nozzle 46 (Y-axis direction) and a lifting actuator that displaces the holding arm 44 in the Z-axis direction. Alternatively, the drive unit 49 may not include a linear motion actuator that displaces the holding arm 44 in the X-axis direction.

[0138] Along with the displacement of the holding arm 44 by the drive unit 49, the drying gas nozzle 45, the cooling gas nozzle 46, and the processing liquid nozzle 47 move together. In one example, the drive unit 49 displaces the holding arm 44 horizontally (along the Y-axis direction) so that the direction in which the arrival area AR (predetermined arrival area) of the cooling gas G1 from the cooling gas nozzle 46 extends is along the radial direction of the workpiece W held in the substrate holding part 20. In this case, the arrival position (predetermined arrival position) of the cooling gas G1 from the drying gas nozzle 45 and the arrival position (predetermined arrival position) of the processing liquid L2 from the processing liquid nozzle 47 are also displaced in the radial direction of the workpiece W.

[0139] <Cover Components>

[0140] return Figure 4 A cover member 70 is disposed around the substrate holding portion 20. The cover member 70 includes a cup body 71, a drain port 72, and an exhaust port 73. The cup body 71 is configured as a collection container for receiving processing liquids L1 and L2 supplied to the workpiece W for processing the workpiece W. The drain port 72 is located at the bottom of the cup body 71 and is configured to discharge the drained liquid collected by the cup body 71 to the outside of the liquid processing unit U1.

[0141] An exhaust port 73 is located at the bottom of the cup body 71. An exhaust section V2 is provided at the exhaust port 73, which is configured to discharge gas from the cup body 71 by operating based on a signal from the control device 100. Therefore, the downflow flowing around the workpiece W is discharged to the outside of the liquid treatment unit U1 via the exhaust port 73 and the exhaust section V2. The exhaust section V2 can be, for example, a damper capable of adjusting the exhaust volume according to the opening degree. By adjusting the exhaust volume from the cup body 71 using the exhaust section V2, the temperature, pressure, humidity, etc., inside the cup body 71 can be controlled.

[0142] Blower B is positioned above substrate holding portion 20 and cover member 70 in liquid treatment unit U1. Blower B is configured to generate a downward flow toward cover member 70 based on a signal from control device 100. Blower B can also be controlled to continuously generate a downward flow during liquid treatment of workpiece W.

[0143] (Control device)

[0144] The control device 100 is configured to partially or entirely control elements of the coating and developing apparatus 2. The control device 100 controls at least the liquid treatment unit U1, which includes the nozzle unit 43 and the substrate holding section 20. For example... Figure 10As shown, the control device 100 has a reading unit M1, a storage unit M2, a processing unit M3, and an indication unit M4 as functional components. These functional components are only for convenience in dividing the functions of the control device 100 into multiple components, and do not mean that the hardware constituting the control device 100 must be divided into such components. Each functional component is not limited to being implemented by executing a program, but can also be implemented using dedicated circuits (such as logic circuits) or integrated circuits (ASICs) that integrate these circuits.

[0145] The reading unit M1 is configured to read programs from a computer-readable storage medium RM. The storage medium RM stores programs for operating various parts of the coating and developing apparatus 2. The storage medium RM can be, for example, a semiconductor memory, an optical disk, a magnetic disk, or a magneto-optical disk.

[0146] The storage unit M2 is configured to store various types of data. For example, the storage unit M2 can store programs read from the storage medium RM by the reading unit M1, and setting data input by the operator using an external input device (not shown). This program can also be configured to operate various parts of the coating and developing apparatus 2.

[0147] The processing unit M3 is configured to process various types of data. For example, the processing unit M3 can generate signals for operating the liquid treatment unit U1, the heat treatment unit U2, etc., based on various types of data stored in the storage unit M2.

[0148] The instruction unit M4 is configured to send the action signals generated by the processing unit M3 to various devices.

[0149] The hardware of the control device 100 may, for example, consist of one or more control computers. Figure 11 As shown, the control device 100 includes a circuit C1 as a hardware structure. The circuit C1 can be composed of circuit elements. The circuit C1 may include: a processor C2, a memory C3, a storage device C4, a driver C5, and an input / output port C6.

[0150] The processor C2 executes programs in cooperation with at least one of the memory C3 and the storage C4, and performs input / output of signals via the input / output port C6, thereby constituting the aforementioned functional components. The memory C3 and the storage C4 function as the storage unit M2. The driver C5 is a circuit that drives various devices of the coating and developing apparatus 2. The input / output port C6 performs signal input / output between the driver C5 and various devices of the coating and developing apparatus 2 (e.g., liquid treatment unit U1, heat treatment unit U2, etc.).

[0151] The coating and developing apparatus 2 may include either a single control device 100 or a controller group (control unit) consisting of multiple control devices 100. When the coating and developing apparatus 2 includes a controller group, the aforementioned functional components can be implemented using either a single control device 100 or a combination of two or more control devices 100. When the control device 100 is composed of multiple computers (circuits C1), the aforementioned functional components can be implemented using either a single computer (circuit C1) or a combination of two or more computers (circuits C1). The control device 100 may also have multiple processors C2. In this case, the aforementioned functional components can be implemented using either a single processor C2 or a combination of two or more processors C2.

[0152] [Substrate Processing Method]

[0153] Next, refer to Figures 12-15b This illustrates the liquid treatment method for workpiece W as an example of a substrate treatment method. Figure 12 This is a flowchart illustrating an example of a liquid treatment method.

[0154] First, the control device 100 controls each part of the coating and developing apparatus 2 to process the workpiece W in the processing units PM1 to PM3, thereby forming a resist film R on the surface Wa of the workpiece W in the coating and developing apparatus 2 (step S11). Next, the control device 100 controls each part of the coating and developing apparatus 2 and uses the transport arm A7, etc., to transport the workpiece W from the processing unit PM3 to the exposure apparatus 3. Then, another control device, different from the control device 100, controls the exposure apparatus 3, and uses the exposure apparatus 3 to expose the resist film R formed on the surface Wa of the workpiece W in a predetermined pattern (step S12).

[0155] Next, the control device 100 controls each part of the coating and developing apparatus 2, and uses the transport arm A5, etc., to transport the workpiece W from the exposure apparatus 3 to the liquid treatment unit U1 of the processing assembly PM4. As a result, the workpiece W is held in the substrate holding part 20 with its surface Wa facing upward. Next, the control device 100 controls the supply part 30, and causes the supply part 30 to supply the processing liquid L1 (developing liquid) to the surface Wa of the workpiece W, that is, the upper surface of the resist film R (step S13).

[0156] In step S13, the control device 100 may control the supply unit 30 to supply the treatment liquid L1 from the nozzle 33 toward the surface Wa of the workpiece W while the nozzle 33 is moved horizontally above the unrotated workpiece W. In this case, as... Figure 13aAs illustrated, the processing liquid L1 is supplied sequentially from one end of the workpiece W to the other. Alternatively, the control device 100 controls the substrate holding part 20 and the supply part 30, causing the workpiece W to rotate using the substrate holding part 20, and while the nozzle 33 moves horizontally above the workpiece W, the supply part 30 supplies the processing liquid L1 from the nozzle 33 toward the surface Wa of the workpiece W. In this case, the processing liquid L1 is supplied in a spiral shape from the center of the workpiece W to the periphery, or from the periphery of the workpiece W to the center. Using step S13, the processing liquid L1 is formed to remain in a state where it covers the entire upper surface of the resist film R on the surface Wa of the workpiece W.

[0157] Next, the control device 100 supplies cooling gas G1 from the outlet 52 of the cooling gas nozzle 46 to the surface Wa of the workpiece W, i.e., the upper surface of the processing liquid L1, via the supply unit 40 (step S14). Alternatively, in step S14, the control device 100 rotates the workpiece W using the substrate holding unit 20 and sprays cooling gas G1 from the outlet 47b of the cooling gas nozzle 46 toward the surface Wa. In this case, it is preferable that the processing liquid L1 on the surface Wa of the workpiece W is not blown away by the cooling gas G1. That is, it is preferable that the surface Wa of the workpiece W, in the state of being supplied with processing liquid L1, is not exposed due to the spraying of cooling gas G1. By supplying cooling gas G1 while the processing liquid L1 remains on the surface Wa of the workpiece W, the surface temperature of the workpiece W can be adjusted using the supply of cooling gas G1 while the processing of the processing liquid L1 continues. More specifically, by adjusting the temperature of the local area on the surface Wa of the workpiece W where cooling gas G1 is supplied, the temperature distribution of the surface Wa of the workpiece W is adjusted.

[0158] like Figure 13b As shown, cooling gas G1 is injected into a region of the surface Wa of the workpiece W, including at least the central portion. For example, as... Figure 14 As shown, the control device 100 uses the drive unit 49 of the nozzle unit 43 to configure the cooling gas nozzle 46 in such a way that the arrival area AR of the cooling gas G1 from the cooling gas nozzle 46 is along the radial direction of the workpiece W, and one end of the arrival area AR in the longitudinal direction (the direction in which the nozzle outlet 52 extends) is approximately aligned with the center CP of the workpiece W. Hereinafter, the position of the cooling gas nozzle 46 configured as described above will be referred to as the "ejection position". With the cooling gas nozzle 46 configured in the above-described ejection position, the control device 100 uses the substrate holding unit 20 to rotate the workpiece W. Then, the control device 100 uses the substrate holding unit 20 to rotate the workpiece W, and controls the supply unit 40 to eject the cooling gas G1 from the nozzle outlet 52 of the cooling gas nozzle 46.

[0159] Since cooling gas G1 from the outlet 52 of the cooling gas nozzle 46 at the aforementioned ejection position is ejected toward the rotating workpiece W, the direction in which the cooling gas G1 extends to the arrival area AR at surface Wa is orthogonal to the rotation direction of the workpiece W (direction R1 or direction R2 as shown in the figure). At this time, in a top view (viewed from the Z-axis direction), the direction from the outlet 52 toward the arrival area AR can be in the same direction as the rotation direction of the workpiece W (the workpiece W can also rotate in direction R1). Alternatively, in a top view, the direction from the outlet 52 toward the arrival area AR can be opposite to the rotation direction of the workpiece W (the workpiece W can also rotate in direction R2).

[0160] Cooling gas G1 is ejected from the cooling gas nozzle 46 as described above, thereby supplying cooling gas G1 to the surface Wa within a radius (the central portion CR in the illustration) having the same width as the length direction of the arrival area AR. Furthermore, when the cooling gas nozzle 46 is positioned in the ejection position, the direction in which the cooling gas G1 from the ejection outlet 52 extends into the arrival area AR should not be orthogonal to the rotation direction of the workpiece W, but rather intersect it. That is, the direction in which the arrival area AR extends should not be orthogonal to the radial direction of the workpiece W.

[0161] The injection of cooling gas G1 relative to the processing liquid L1 can also be continued during the development of the resist film R. For example, the injection of cooling gas G1 relative to the processing liquid L1 can continue from the supply of processing liquid L1 to the surface Wa of the workpiece W until the end of development, or until the start of subsequent processing. In step S14, the control device 100 can control the exhaust section V2 to supply cooling gas G1 relative to the surface Wa of the workpiece W while either in a state where exhaust from the cup body 71 has stopped, or in a state where exhaust from the cup body 71 continues.

[0162] Next, the control device 100 controls the substrate holding section 20 and the supply section 40, and supplies the processing liquid L2 (rinsing liquid) from the processing liquid nozzle 47 to the surface Wa of the rotating workpiece W, i.e., the upper surface of the processing liquid L1, via the supply section 40 (step S15). Thus, as... Figure 15a As shown, the dissolved resist in the resist film R, which dissolves due to the reaction with the treatment solution L1, is flushed away (discharged) from the surface Wa of the workpiece W along with the treatment solution L1 using the treatment solution L2. Thus, a resist pattern RP is formed on the surface Wa of the workpiece W.

[0163] Before the spraying of the processing liquid L2 in step S15 begins, the control device 100 uses the drive unit 49 to displace the processing liquid nozzle 47 (holding arm 44) so ​​that the arrival area of ​​the processing liquid L2 from the processing liquid nozzle 47 at the surface Wa is located at the center CP of the workpiece W. In this embodiment, the drive unit 49 does not displace the processing liquid nozzle 47 in a direction intersecting the radial direction of the workpiece W, but rather displaces the processing liquid nozzle 47 in the radial direction of the workpiece W. In step S15, the control device 100 can control the venting unit V2 so that the supply unit 40 performs the supply of processing liquid L2 relative to the surface Wa of the workpiece W while the venting continues within the cup body 71. The venting volume within the cup body 71 in step S15 can be set to be greater than the venting volume within the cup body 71 in step S14.

[0164] Next, the control device 100 supplies drying gas G2 from the drying gas nozzle 45 to the surface Wa of the rotating workpiece W, i.e., the upper surface of the treatment liquid L2 remaining on the surface Wa, via the supply unit 40 (step S16). At the start of the spraying of the drying gas G2 in step S16, the control device 100 can use the drive unit 49 to move the holding arm 44 horizontally (along the Y-axis direction) so that the arrival position of the drying gas G2 is approximately aligned with the center CP of the workpiece W. For cases where the arrival position of the treatment liquid L2 from the treatment liquid nozzle 47 at the surface Wa in the Y-axis direction is approximately aligned with the arrival position of the drying gas G2 from the drying gas nozzle 45 at the surface Wa, the aforementioned movement of the holding arm 44 can be omitted. In one example of the configuration relationship between the drying gas nozzle 45 and the treatment liquid nozzle 47, at least in the X-axis direction, the arrival position of the drying gas G2 is approximately aligned with the arrival position of the treatment liquid L2 (see reference). Figure 5 Therefore, each time the supply of processing liquid L2 is switched to the supply of dry gas G2, it is not necessary to change the position of holding arm 44 in the X-axis direction.

[0165] In step S16, the control device 100 may use the drive unit 49 to move the holding arm 44 horizontally, so that the drying gas nozzle 45 moves above the workpiece W from the center of the workpiece W to the periphery. As a result, the treatment liquid L2 present approximately in the center of the workpiece W is dispersed and evaporated, such as... Figure 15b As shown, a drying region D is formed in the center of the workpiece W. Here, the drying region D refers to the area where the surface Wa of the workpiece W is exposed due to the evaporation of the processing liquid L2, but it also includes cases where extremely fine (e.g., on the order of μ) droplets adhere to the surface Wa. This drying region D diffuses from the center of the workpiece W towards the periphery under the centrifugal force generated by the rotation of the workpiece W. After the drying region D is formed, the supply of drying gas G2 from the drying gas nozzle 45 can be stopped.

[0166] In step S16, the control device 100 may control the exhaust section V2, and while the exhaust continues within the cup body 71, the drying gas G2 is supplied to the surface Wa of the workpiece W. The exhaust volume within the cup body 71 in step S16 may be set to be greater than the exhaust volume within the cup body 71 in step S14.

[0167] After the supply of drying gas G2 from the drying gas nozzle 45 stops, the treatment liquid L2 remaining on the surface Wa of the workpiece W diffuses from the center of the workpiece W toward the periphery under the centrifugal force generated by the rotation of the workpiece W. Subsequently, when the treatment liquid L2 on the surface Wa of the workpiece W is completely removed from the periphery of the workpiece W, the drying of the workpiece W is complete. Thus, the liquid treatment of the workpiece W ends.

[0168] [Effects of the Implementation Method]

[0169] For the nozzle unit 43 described above, cooling gas G1 is radially ejected from the nozzle outlet 52 extending along the first direction (Y-axis direction) of the cooling gas nozzle 46. Therefore, cooling gas G1 is supplied from the cooling gas nozzle 46 to the arrival area AR in the surface Wa of the workpiece W, which is longer than the width of the nozzle outlet 52 in the first direction. This allows the cooling gas G1 to be ejected in alignment with the center of the workpiece W. As a result, by supplying cooling gas G1 during the developing process, the central portion of the workpiece W, from which cooling gas G1 is ejected, is cooled more than the peripheral portion. Consequently, the uniformity of the temperature distribution within the surface of the workpiece W can be improved.

[0170] In the developing process, specifically during the period from when the developing solution is supplied to the surface Wa of the workpiece W until the rinsing solution is supplied, heat dissipation from the periphery of the workpiece W is easily promoted due to the exhaust gas in the housing, etc., even without the use of cooling gas G1. Therefore, temperature differences sometimes occur within the surface of the workpiece W, resulting in different developing speeds within the surface and potential deviations in the linewidth of the resist pattern within the surface of the workpiece W. In contrast, regarding the nozzle unit 43 according to the above embodiment, it is believed that by displacing the atmosphere near the upper surface of the developing solution in the portion where cooling gas G1 is supplied, the vaporization of the developing solution in this portion is enhanced compared to other portions, thereby improving cooling using the heat of vaporization. Furthermore, since cooling gas G1 is supplied from the cooling gas nozzle 46 at a certain pressure, the cooling gas G1 expands after being ejected from the cooling gas nozzle 46. As a result, it is believed that the temperature of the cooling gas G1 itself decreases (adiabatic expansion cooling), and the area on the surface Wa of the workpiece W from which the cooling gas G1 was ejected is cooled. Thus, by supplying cooling gas G1, the surface Wa of the workpiece W can be locally cooled, thereby improving the uniformity of temperature distribution within the surface of workpiece W. Consequently, the deviation in the linewidth of the anti-corrosion pattern within the surface of workpiece W can be reduced.

[0171] In one example of the above embodiment, the cooling gas nozzle 46 is configured such that both ends of the nozzle 52 in the first direction are visible when viewed from the first direction. In this case, the increase in the length of the nozzle 52 in the first direction can be suppressed, and the cooling gas G1 can be sprayed onto a wider range of the workpiece W. Therefore, the nozzle unit 43 can be simplified.

[0172] In one example of the above embodiment, the central portion of the surface of the nozzle 52 including the opening edge (opening surface) in the first direction protrudes toward the surface Wa. In this case, the difference in length of the flow path in the gas flow path 51 up to the opening surface is reduced from near the center of the nozzle 52 (axis Ax) to the two ends of the nozzle 52 in the Y-axis direction. As a result, the uniformity of the flow velocity of the ejected cooling gas G1 can be improved within the opening surface, and consequently, the degree of cooling by the cooling gas G1 can be made uniform within the arrival area AR of the cooling gas G1 at the surface Wa. Therefore, the uniformity of the temperature distribution within the workpiece W surface can be further improved. For example, in Figures 7a-7c In the example shown, when viewed from the front, the flow path at the corner is longer than that in other parts, resulting in a decrease in flow velocity at that corner. Figures 8a-8c In the example shown, the surface of the nozzle 52, including the opening edge (opening surface), is curved and there are no corners when viewed from the front. Therefore, there is no concern that the flow velocity is weakened compared to other parts, and the uniformity of the flow velocity can be further improved.

[0173] The nozzle unit 43 described in the above embodiments further includes: a drying gas nozzle 45 having an outlet 45b that sprays drying gas G2 toward the surface Wa; and a drive unit 49 that moves the cooling gas nozzle 46 and the drying gas nozzle 45 together along the surface Wa. In this case, since both nozzles can be moved using a single drive unit 49, the nozzle unit 43, including the drive unit 49, can be simplified compared to the case where both nozzles are moved using a separate drive unit.

[0174] In the above embodiment, the flow rate of the cooling gas G1 ejected from the outlet 52 of the cooling gas nozzle 46 is less than the flow rate of the drying gas G2 ejected from the outlet 45b of the drying gas nozzle 45. In this case, the cooling gas nozzle 46 and the drying gas nozzle 45 can be used for treating gases that require a degree of non-dispersal of liquid on the surface Wa and for treating gases that require a degree of dispersal of liquid on the surface Wa.

[0175] The nozzle unit 43 described in the above embodiments also includes a treatment liquid nozzle 47 having a spray outlet 47b, which sprays treatment liquid L2 toward surface Wa. The drive unit 49 moves the cooling gas nozzle 46, the drying gas nozzle 45, and the treatment liquid nozzle 47 together. In this case, since three nozzles can be moved using a single drive unit 49, the nozzle unit 43 can be simplified compared to a case where a drive unit is included to move each of the three nozzles individually.

[0176] In the above embodiment, the cooling gas nozzle 46 and the processing liquid nozzle 47 are positioned at different locations in a second direction (X-axis direction) orthogonal to the first direction and along the surface Wa. The cooling gas nozzle 46 and the processing liquid nozzle 47 are configured such that the distance in the second direction between the arrival position (arrival area AR) of the cooling gas G1 from the cooling gas nozzle 46 and the arrival position of the processing liquid L2 from the processing liquid nozzle 47 on the surface Wa is less than the distance in the second direction between the outlet 52 of the cooling gas nozzle 46 and the outlet 47b of the processing liquid nozzle 47. In this case, the switching time between processing using the cooling gas G1 from the cooling gas nozzle 46 (step S14) and processing using the processing liquid L2 from the processing liquid nozzle 47 (step S15) can be shortened.

[0177] In the above embodiments, in the second direction, the drying gas nozzle 45 and the processing liquid nozzle 47 are positioned at different locations. The drying gas nozzle 45 and the processing liquid nozzle 47 can be configured such that, when viewed from the first direction, the inclination of the ejection direction of the processing liquid L2 from the processing liquid nozzle 47 relative to the surface Wa is less than the inclination of the ejection direction of the drying gas G2 from the drying gas nozzle 45 relative to the surface Wa. In this case, compared to the case where the processing liquid L2 is ejected from the processing liquid nozzle 47 approximately perpendicular to the surface Wa, the influence of the processing liquid L2 ejected from the processing liquid nozzle 47 on the surface Wa can be suppressed.

[0178] In the above embodiment, a cooling gas nozzle 46, a drying gas nozzle 45, and a processing liquid nozzle 47 are sequentially arranged in the second direction. In this case, the nozzle unit 43 can be configured in such a way that the supply path of the gas supplied to the drying gas nozzle 45 and the cooling gas nozzle 46 is shortened.

[0179] The coating and developing apparatus 2 described in the above embodiments includes: a nozzle unit 43; a substrate holding section 20 that holds a workpiece W with its surface Wa facing upward and rotates it; and a control device 100 that controls the nozzle unit 43 and the substrate holding section 20. When the workpiece W is rotated using the substrate holding section 20, the control device 100 ejects cooling gas G1 from a cooling gas nozzle 46 such that the direction extending from the surface Wa in the arrival region AR of the cooling gas G1 intersects with the rotation direction (directions R1, R2) of the workpiece W. This supplies gas to the region of surface Wa including the central portion CR using the cooling gas nozzle 46. In this case, the cooling gas G1 ejected from the cooling gas nozzle 46 can diffuse circumferentially at the central portion CR of surface Wa, thereby reducing the temperature of the central portion CR compared to the peripheral portion of the workpiece W. Therefore, the temperature difference between the central portion and the peripheral portion within the surface of the workpiece W can be reduced.

[0180] In the liquid treatment method described in the above embodiments, the workpiece W is cooled in the area where the gas is supplied by supplying gas (cooling gas G1). Here, by supplying gas in a manner that diffuses radially relative to the circumference of the workpiece W, the central portion is cooled relative to the periphery. Therefore, the uniformity of the temperature distribution within the surface of the workpiece W can be improved.

[0181] In the above embodiments, the gas flow rate and velocity can be adjusted during the supply of gas to the treatment liquid L1 remaining on the workpiece W so that the surface of the workpiece W is not exposed due to the movement of the treatment liquid L1 caused by the gas supply. In this case, appropriate localized cooling of the workpiece W can be performed to match the temperature sensitivity (cooling sensitivity) of the chemical solution, preventing adverse effects on the liquid treatment such as the gas disturbing or destroying the film of the treatment liquid L1 due to its impact.

[0182] use Figure 16a , Figure 16b and Figure 17 The effects of this implementation method will be further explained. Figure 16a This indicates that no cooling gas is supplied, i.e., step S14 mentioned above is omitted (see [reference]). Figure 12 The figure shows the temperature distribution (in-plane temperature distribution) on the surface Wa of the workpiece W under the condition of ). Figure 16a The temperatures of the surface Wa shown were obtained after the supply of the developer in step S13 was completed and after a predetermined time had elapsed since the development of the resist film R. On the other hand, Figure 16b This is a diagram showing the in-plane temperature distribution of the surface Wa of the workpiece W under the condition that the cooling gas supply in step S14 has been carried out. Figure 16b The temperatures of the workpiece W shown are the results obtained by measuring the surface temperature Wa after step S14 and after the same predetermined time as described above has elapsed after step S13.

[0183] exist Figure 16a and Figure 16b In this system, the intensity of color indicates the temperature, with darker areas representing higher temperatures. According to... Figure 16a The results show that, without a cooling gas supply, the temperature in the center of workpiece W is higher than that in the peripheral area. On the other hand, according to... Figure 16b The results show that by supplying cooling gas to the center of workpiece W, the temperature of the center is reduced to the same level as that of the periphery, and the temperature difference between the center and the periphery is greater than that of the surrounding area. Figure 16a The result shown is small.

[0184] Figure 17 The comparison results of the deviation (standard deviation) of the in-plane linewidth distribution are shown. Figure 17 The diagram shows the comparison results when the standard deviation is set to 100 without cooling gas supply. With cooling gas supplied, the standard deviation decreases to 71. That is, it can be seen that by supplying cooling gas, the uniformity of the in-plane linewidth distribution is improved by about 30%.

[0185] [Variation Example]

[0186] It should be considered that the disclosure in this specification is illustrative in all respects and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the claims and their spirit.

[0187] (Regarding the method of supplying cooling gas)

[0188] The above description of the series of steps illustrates various possible methods for supplying cooling gas G1 from cooling gas nozzle 46. However, by optimizing the timing and method of the injection of cooling gas G1 relative to the processing liquid L1, the uniformity of the in-plane temperature distribution on the surface Wa of the workpiece W can be improved. As a result, for example, the uniformity of the linewidth (CD) of the resist film R on the workpiece W after processing (after development) can be improved. This point will be explained further.

[0189] First, the results obtained from the study related to the timing of the supply of cooling gas G1 are explained. (For example, also...) Figure 12 As explained in the previous section, after the supply unit 30 supplies the processing liquid L1 (developer) to the surface Wa (upper surface of the resist film R) of the workpiece W (step S13), the cooling gas G1 is supplied. Additionally, the cooling gas G1 is supplied before the processing liquid L2 (rinsing liquid) is supplied from the processing liquid nozzle 47 to the upper surface Wa (processing liquid L1) of the workpiece W (step S15).

[0190] The control device 100 ensures that the treatment liquid L1 remains on the surface Wa of the workpiece W for a certain period of time from the end of the supply of treatment liquid L1 to the start of the supply of treatment liquid L2 (rinsing liquid) to the surface Wa of the workpiece W (step S13) until the start of the supply of treatment liquid L2 (rinsing liquid) to the surface Wa of the workpiece W. The period between the supply of treatment liquid L1 to the surface Wa of the workpiece W (step S13) and the supply of treatment liquid L2 (rinsing liquid) (step S15) is the time period during which the treatment liquid L1 remains on the surface Wa of the workpiece W; therefore, this period is designated as the "maintenance period". The maintenance period includes the time for supplying cooling gas G1 (step S14). The supply of cooling gas G1 does not need to be performed during the entire maintenance period between the supply of treatment liquid L1 to the surface Wa of the workpiece W (step S13) and the supply of treatment liquid L2 (rinsing liquid) (step S15), but can be performed only during a portion of the maintenance period.

[0191] As an example of supplying cooling gas G1 during a portion of the maintenance period, it can be configured such that cooling gas G1 is not supplied during the first half of the maintenance period, and is supplied during the second half. That is, the first half of the maintenance period can be designated as a period during which cooling gas G1 is not supplied (non-supply period). Here, non-supply period refers to a period longer than, for example, the time during which the supply of cooling gas G1 can be stopped due to actions related to normal liquid processing, such as movement of the various parts of the liquid processing unit U1, including the cooling gas nozzle 46, or the opening and closing of valves in the flow path of the gas or processed liquid.

[0192] By configuring the supply of cooling gas G1 only for the latter half of the time, the temperature difference on the surface Wa of the workpiece W can be reduced during the middle stage of the holding period, thereby improving the uniformity of the linewidth of the anti-corrosion pattern within the surface of the workpiece W. For this, refer to... Figure 18a , Figure 18b and Figure 19 Please provide an explanation.

[0193] Figure 18a and Figure 18b The result is obtained by measuring the temperature change on the surface Wa of workpiece W caused by supplying cooling gas G1 to the surface Wa of workpiece W. Figure 18a The results are shown when cooling gas G1 is supplied throughout the entire maintenance period T. Additionally, Figure 18b The results are shown when cooling gas G1 is not supplied during the first half of the maintenance period, T1, but is supplied during the second half, T2. Additionally, Figure 18a , Figure 18b The results of temperature changes at measurement points at distances of 0 mm, 9 mm, 37 mm, 74 mm, 110 mm, and 147 mm from the center of workpiece W relative to the temperature measurement point are shown. The workpiece W used for this evaluation is a circular plate with a radius of 147 mm. Furthermore, in... Figure 18a and Figure 18b In this configuration, the cooling gas nozzle 46 supplying cooling gas G1 is configured under the same conditions. Specifically, the cooling gas nozzle 46 is configured such that the arrival area AR of the cooling gas G1 from the cooling gas nozzle 46 is along the radial direction of the workpiece W, and the center of the arrival area AR in the longitudinal direction is located at a position 50 mm outward from the center of the workpiece W. The center in the longitudinal direction of the arrival area AR refers to the center in the direction in which the nozzle 52 extends.

[0194] like Figure 18aAs shown, when cooling gas G1 is supplied throughout the entire maintenance period T, the temperature difference between measurement locations increases, corresponding to the elapsed time since the supply of cooling gas G1 (the elapsed time since the start of maintenance period T). On the other hand, according to... Figure 18b The results show that, in any period of the first half (T1) and the second half (T2) of the maintenance period, the temperature difference between the measurement locations is less than [value missing]. Figure 18a The results are shown. On the surface Wa of the workpiece W after the treatment solution L1 is supplied, the temperature difference at various points at different times sometimes affects the processing performed using the treatment solution L1 (e.g., development using the developer when the treatment solution L1 is a developer). Therefore, it is considered that the temperature difference between measurement points at different times during the holding period T is related to the deviation of the results of the processing performed using the treatment solution L1 on the surface Wa of the workpiece W. Therefore, as... Figure 18b As shown, by configuring the supply of cooling gas G1 for a portion of the holding period, deviations in the processing progress at the surface Wa of the workpiece W can be suppressed. Furthermore, as a result, deviations in the processing outcome can be suppressed.

[0195] In addition, Figure 19 The diagram shows the results of a simulation of the temperature change of the surface Wa of the workpiece W when cooling gas G1 is supplied during the first half of the holding period, T1, but not during the second half, T2. In other words, compared to... Figure 18b The conditions shown interchange the periods when cooling gas G1 is supplied and the periods when cooling gas G1 is not supplied. Additionally, in Figure 19 The image shows the simulation results for the periphery and center of workpiece W. (Example:) Figure 19 As shown, when cooling gas G1 is supplied during the first half of the maintenance period, time T1, the temperature difference between the measurement locations corresponding to the elapsed time since the supply of cooling gas G1 increases until the end of the maintenance period (until the end of the second half, time T2). This tendency is similar to the increase in the temperature difference between the measurement locations corresponding to the elapsed time since the start of the maintenance period T. Figure 18a The results are shown. Furthermore, in the latter half of period T2, the temperature difference decreases, but as... Figure 19 As shown, a certain degree of temperature difference is maintained until the end of the latter half of period T2. Based on this, let's assume... Figure 18b The conditions shown can suppress deviations in the processing progress at the surface Wa of workpiece W.

[0196] That is, it is believed that supplying cooling gas G1 during the latter half of the maintenance period, period T2, and setting the first half of the period, T1, as a period during which cooling gas G1 is not supplied (non-supply period), can improve the effect of suppressing the deviation of the processing result at the surface Wa of the workpiece W caused by the supply of cooling gas G1.

[0197] Figure 20 The results show the correlation between the proportion of the cooling gas G1 supply period throughout the entire holding period and the deviation of the linewidth of the resist pattern on the workpiece W surface, when the processing liquid L1 is set as the developing liquid. Figure 20 In the diagram, a 0% percentage on the horizontal axis represents the result of no cooling gas G1 being supplied, while a 100% percentage represents the result of cooling gas G1 being supplied throughout the entire maintenance period. Furthermore, the figures on the horizontal axis between 0% and 100% represent the results of... Figure 18b The results shown are similarly set up to determine the extent to which the latter half of the cooling gas supply period T2 varies relative to the entire maintenance period, assuming cooling gas G1 is supplied in the latter half of the period T2. For example, a proportion of 72% indicates that the supply time of cooling gas G1 was controlled such that the proportion of the first half of the maintenance period T1 (non-supply period) was 28%, and the proportion of the cooling gas supply period in the latter half of the maintenance period T2 was 72%. Furthermore, the 3sigma on the vertical axis represents the 3sigma related to the deviation of the measured linewidth of the resist pattern under each condition.

[0198] in addition, Figures 21a-21c It means Figure 20 The diagram (outline diagram) shows the distribution of the line width (CD) of the surface Wa of the workpiece W under the conditions of 45%, 63%, and 81% shown. Figure 21a This indicates the result when the proportion is 45%. Figure 21b This indicates the result when the proportion is 63%. Figure 21c The results represent the percentage of 81%. All measurements were taken after a maintenance period following the supply of cooling gas G1. Furthermore, in... Figures 21a-21c Nakaya and Figure 16a , Figure 16b Similarly, the line width (CD) is represented by the shade of color; the darker the color, the larger the measured line width (CD).

[0199] exist Figure 20 In the results shown, for proportions ranging from 36% to 81%, the 3 sigma values ​​were all of the same degree, presumably indicating that the linewidth deviations were of the same degree. On the other hand, according to... Figures 21a-21c The results shown indicate that even when 3 sigma is of the same degree, according to Figure 21a (45%) and Figure 21c The results (at a rate of 81%) show that the line width in the central part of workpiece W is smaller (fineer) compared to the periphery. On the other hand, it was confirmed that... Figure 21b In the results shown (at a rate of 63%), the linewidth deviation decreases between the center and periphery of workpiece W. Thus, even with the same 3 Sigma level, there are cases where in-plane linewidth deviation occurs and cases where no linewidth deviation occurs. Based on the above... Figure 20 The results show the 3 sigma result of the linewidth of the corrosion-resistant pattern and the deviation of the in-plane linewidth (CD) of the surface Wa of the workpiece W. Figures 21a-21c The combination of results shown allows you to specify the optimal time for supplying cooling gas G1.

[0200] according to Figure 20 21. For example, when the supply time of cooling gas G1 during the latter half of the maintenance period, T2, is set to 63%, compared to 45% and 81%, the deviation in the linewidth of the resist pattern can be reduced by the same amount. Figure 20 On the other hand, when the supply time of cooling gas G1 in the latter half of period T2 is set to 63%, compared with the proportions of 45% and 81%, the deviation in linewidth within the surface can be reduced. Furthermore, it is believed that this condition varies considerably depending on the type of resist and developer, the size of the resist pattern, and the supply quantity (speed) of cooling gas G1. Therefore, by adjusting the timing of supplying cooling gas G1 in accordance with changes in manufacturing conditions, it is possible to specify cooling gas G1 supply conditions that can further suppress deviations in the linewidth of the resist pattern corresponding to the manufacturing conditions.

[0201] Figure 22a , Figure 22b This indicates the result obtained by evaluating the extent to which the deviation of the linewidth of the anti-corrosion pattern changes when the supply position of cooling gas G1 is changed. Figure 22a and Figure 22bAll examples show the results when the surface Wa of the workpiece W is treated under the same conditions, except for the cooling gas nozzle 46. In each of these cases, the cooling gas nozzle 46 is positioned such that the arrival area AR of the cooling gas G1 from the cooling gas nozzle 46 is along the radial direction of the workpiece W. Furthermore, the cooling gas nozzle 46 is positioned such that its center in the longitudinal direction of the arrival area AR (the direction in which the nozzle outlet 52 extends) is located 30 mm, 50 mm, 70 mm, 90 mm, 100 mm, and 110 mm respectively, shifted outward from the center of the workpiece W. In addition, the length of the arrival area AR of the cooling gas nozzle 46 is approximately 80 mm, and the radius of the workpiece W is 147 mm. Therefore, in the case of "30 mm from the center", the arrival area AR overlaps with the center of the workpiece W. Figure 22a , Figure 22b The horizontal axis represents the aforementioned "distance from the center." Additionally, the vertical axis, 3sigma, represents the 3sigma related to the deviation of the measured linewidth of the resist pattern under various conditions. Furthermore, Figure 22a and Figure 22b This indicates the results obtained by evaluating at different times. Therefore, in Figure 22a and Figure 22b Both include the result for "90mm", but the result for the 3sigma on the vertical axis has changed.

[0202] according to Figure 22a The results show that as the distance from the center increases, 3 sigma decreases, thus reducing the deviation in the linewidth of the anti-corrosion pattern on the workpiece W by moving the cooling gas nozzle 46 from the center outwards. On the other hand, according to... Figure 22b The results show that when the distance between the cooling gas nozzle 46 and the center is 100 mm, the deviation in the linewidth of the resist pattern on the workpiece W is reduced. Therefore, by arranging the cooling gas nozzle 46 at a distance of 100 mm from the center, the deviation in the linewidth of the resist pattern can be suppressed. Furthermore, this condition is believed to vary considerably depending on the type of resist and developer, the size of the resist pattern, and the supply quantity (speed) of the cooling gas G1. Therefore, by adjusting the position of the cooling gas nozzle 46 supplying the cooling gas G1 in accordance with changes in manufacturing conditions, it is possible to specify cooling gas G1 supply conditions that suppress the deviation in the linewidth of the resist pattern corresponding to the manufacturing conditions.

[0203] As shown in the modified example above, the period T from the time the processing liquid L1 is formed on the entire (approximately the entire) workpiece W until the processing liquid begins to be discharged from the substrate may include a non-supply period where no gas is supplied. In this case, by setting a non-supply period where no gas is supplied in the maintenance period T, the cooling condition of the workpiece W using gas can be adjusted. Therefore, the uniformity of the temperature distribution in the plane can be improved.

[0204] Alternatively, the non-supply period can be set in the first half of the holding period. By setting the non-supply period in the first half of the holding period T, the uniformity of the temperature distribution within the surface of the workpiece W can be improved throughout the entire holding period. Furthermore, the gas supply period can be set before the non-supply period. Thus, there is no particular limitation on which periods of the holding period are designated as non-supply periods, and they can be appropriately varied.

[0205] Alternatively, gas can be supplied while the workpiece W is rotated, and the gas can be supplied to the workpiece W in a manner that reaches the area excluding the center of the substrate. As explained above, when gas is supplied while the workpiece W is rotated, if the cooling gas nozzle 46 is arranged so that the gas reaches the center of the workpiece W, a difference in the amount of gas supplied may occur between the center and the peripheral side of the workpiece W. Therefore, by adjusting the supply position so that the gas does not reach the center, more uniform cooling using gas can be achieved.

[0206] (Regarding other variations)

[0207] Next, variations other than those in the supply conditions of cooling gas G1 will be described. In the nozzle unit 43 of the above example, the drying gas nozzle 45, cooling gas nozzle 46, and processing liquid nozzle 47 are interconnected and move together using a single drive unit 49. However, the nozzle unit 43 may also have a drive unit that moves any two nozzles and a drive unit that moves the remaining nozzle. In this case, the two nozzles that move using one drive unit may be interconnected, while the nozzle that moves using another drive unit may not be connected to the two nozzles mentioned above. Alternatively, the nozzle unit 43 may have three drive units that move the three nozzles individually, or the three nozzles may not be interconnected. Furthermore, the nozzle unit 43 may also have at least one of the drying gas nozzle 45 and the processing liquid nozzle 47.

[0208] For the nozzle unit 43 in the example above, when viewed from the Y-axis direction (the direction in which the nozzle outlet 52 extends), the arrival positions of the gas or processing liquid from the drying gas nozzle 45, the cooling gas nozzle 46, and the processing liquid nozzle 47 at surface Wa are approximately the same, but the relationship between the arrival positions is not limited to this. It is also possible that the arrival positions of the gas, etc., from any two of the three nozzles are approximately the same, while the arrival position of the gas, etc., from the other nozzle is different from the arrival positions of the gas, etc., from the aforementioned two nozzles. It is also possible that the arrival positions of the gas, etc., from the three nozzles are different from each other. The ejection directions of the gas, etc., from the nozzle outlets of the three nozzles may also be different from the directions described above, corresponding to their arrival positions.

[0209] The arrangement (order) of the drying gas nozzle 45, cooling gas nozzle 46, and treatment fluid nozzle 47 in the X-axis direction is not limited to the example above; these three nozzles can be arranged in any order. The height relationship of the nozzle outlets is not limited to the example above; it can be that the outlet of any nozzle is higher than the outlets of the other two nozzles, or that the height positions of any two nozzles are approximately the same, or that the height positions of the outlets of all three nozzles are approximately the same.

[0210] The liquid processing unit U1, which performs liquid processing other than development processing, may also have the same nozzle unit 43 as described above. The coating and developing apparatus 2 (substrate processing system 1) is not limited to the above examples, and can be configured arbitrarily as long as it has a nozzle unit that includes at least an outlet extending in one direction and a gas nozzle that ejects gas radially.

Claims

1. A nozzle unit for a liquid treatment apparatus that applies a solution to a substrate, characterized in that, The nozzle unit includes a gas nozzle having: an ejection flow path for gas flow; and an ejection outlet for ejecting the gas flowing in the ejection flow path toward the surface of the substrate. The nozzle is formed to extend in a first direction along the surface. The width of the ejection flow path in the first direction increases as it approaches the nozzle, so that the gas from the nozzle is ejected radially. The nozzle unit also includes: A second gas nozzle having a second outlet that ejects a second gas toward the surface; and A drive unit that moves the gas nozzle and the second gas nozzle together along the surface. The velocity of the gas ejected from the first nozzle is less than the velocity of the second gas ejected from the second nozzle.

2. The nozzle unit according to claim 1, characterized in that, The gas nozzle is configured such that both ends of the outlet in the first direction are visible when viewed from the first direction.

3. The nozzle unit according to claim 2, characterized in that, The central portion of the surface of the nozzle, including the opening edge, protrudes toward the surface in the first direction.

4. The nozzle unit according to claim 1, characterized in that, The nozzle unit also includes a treatment liquid nozzle having a third spray outlet that sprays treatment liquid toward the surface. The drive unit causes the gas nozzle, the second gas nozzle, and the treatment liquid nozzle to move together.

5. The nozzle unit according to claim 4, characterized in that, In a second direction orthogonal to the first direction and along the surface, the gas nozzle and the treatment liquid nozzle are positioned at different locations. The gas nozzle and the treatment liquid nozzle are configured such that the distance in the second direction between the arrival position of the gas from the gas nozzle on the surface and the arrival position of the treatment liquid from the treatment liquid nozzle on the surface is less than the distance in the second direction between the spray outlet and the third spray outlet.

6. The nozzle unit according to claim 5, characterized in that, In the second direction, the second gas nozzle and the treatment liquid nozzle are positioned at different locations. The second gas nozzle and the treatment liquid nozzle are configured such that, when viewed from the first direction, the inclination of the spray direction of the treatment liquid from the treatment liquid nozzle relative to the surface is less than the inclination of the spray direction of the second gas from the second gas nozzle relative to the surface.

7. The nozzle unit according to claim 5 or 6, characterized in that, In the second direction, the gas nozzle, the second gas nozzle, and the treatment liquid nozzle are arranged in the order of the gas nozzle, the second gas nozzle, and the treatment liquid nozzle.

8. A nozzle unit for a liquid treatment apparatus that applies a solution to a substrate, characterized in that, The nozzle unit includes a gas nozzle having: an ejection flow path for gas flow; and an ejection outlet for ejecting the gas flowing in the ejection flow path toward the surface of the substrate. The nozzle is formed to extend in a first direction along the surface. The width of the ejection flow path in the first direction increases as it approaches the nozzle, so that the gas from the nozzle is ejected radially. The nozzle unit also includes: A second gas nozzle having a second outlet that ejects a second gas toward the surface; and A drive unit that moves the gas nozzle and the second gas nozzle together along the surface. The nozzle unit also includes a treatment liquid nozzle having a third spray outlet that sprays treatment liquid toward the surface. The drive unit causes the gas nozzle, the second gas nozzle, and the treatment liquid nozzle to move together. In a second direction orthogonal to the first direction and along the surface, the gas nozzle and the treatment liquid nozzle are positioned at different locations. The gas nozzle and the treatment liquid nozzle are configured such that the distance in the second direction between the arrival position of the gas from the gas nozzle on the surface and the arrival position of the treatment liquid from the treatment liquid nozzle on the surface is less than the distance in the second direction between the spray outlet and the third spray outlet.

9. A liquid treatment device, characterized in that, The liquid treatment device includes: The nozzle unit according to any one of claims 1 to 6 and 8; A substrate holding unit that holds the substrate with its surface facing upward and rotates it; and The control unit controls the nozzle unit and the substrate holding unit. The control unit supplies gas to a region including the central portion of the surface by ejecting gas through a gas nozzle while the substrate is rotated using the substrate holding unit, in a manner where the direction extending from the gas arrival area on the surface intersects the rotation direction of the substrate.

10. A liquid treatment method, characterized in that, While maintaining the processing liquid on the substrate, the nozzle unit according to any one of claims 1 to 6 and 8 supplies gas from above the processing liquid to the region on the upper surface of the processing liquid remaining on the substrate that is closer to the periphery than to the periphery, in a manner that diffuses more radially than to the circumference of the substrate.

11. The liquid treatment method according to claim 10, characterized in that, During the process of supplying the gas toward the processing liquid retained on the substrate, the flow rate and velocity of the gas are adjusted so that the surface of the substrate is not exposed due to the movement of the processing liquid caused by the supply of the gas.

12. The liquid treatment method according to claim 10, characterized in that, The period from the formation of the state where the processing liquid is retained on the substrate to the start of the removal of the processing liquid from the substrate includes a non-supply period during which the gas is not supplied.

13. The liquid treatment method according to claim 12, characterized in that, The non-supply period is set in the first half of the maintenance period.

14. The liquid treatment method according to any one of claims 10 to 13, characterized in that, The gas is supplied while the substrate is rotated. The gas is supplied to the substrate in such a way that it reaches a region that does not include the center of the substrate.

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