Light emitting component, method of manufacturing the same, and light emitting device

Abstract

The application discloses a light-emitting component, a manufacturing method thereof and a light-emitting device. The light-emitting component comprises a epitaxial substrate, an N-type material layer, a light-emitting layer, a P-type material layer, a passivation layer, an anode pad and a cathode pad. The anode pad extends from the upper surface of the P-type material layer to the upper surface of the epitaxial substrate along the passivation layer. The cathode pad extends from the upper surface of the P-type material layer to the surface of the N-type material layer and then to the upper surface of the epitaxial substrate along the passivation layer. In one aspect, the light-emitting component is formed by arranging the pad on the sidewall and bottom of the light-emitting layer, so as to avoid color deviation caused by mixed light of different color light emitted by two adjacent light-emitting components, thereby improving display quality. In another aspect, the solder paste layer is formed by coating the solder paste on the sidewall and bottom of the pad, so as to increase the contact area between the solder paste layer and the driving substrate pad, improve the anti-pull force performance of the light-emitting component, avoid falling off under stress, and thereby improve the display quality.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a light-emitting component, its manufacturing method, and a light-emitting device. Background Technology

[0002] As the high-end TV market demands increasingly higher picture quality, improving display quality has become a new requirement. Currently, the application of 8K organic light-emitting diodes (OLEDs) is still under development due to limitations in compensation circuits, backplane technology, and driver design. Meanwhile, Mini LEDs, as a completely new display technology, offer advantages in brightness and power consumption compared to OLEDs and dual-LCD displays.

[0003] However, as the LED chips of Mini LED and Micro-LED become smaller and smaller, the pad area becomes smaller and smaller, resulting in a smaller and smaller contact area between the LED chip pad and the substrate pad. This leads to a decrease in the LED chip's resistance to push and pull forces, making it easier for the LED chip to fall off under stress, which seriously affects the display quality.

[0004] like Figure 1 As shown, Figure 1 This is a schematic diagram of a conventional light-emitting device 90. The device includes a substrate 91 and light-emitting components 92 soldered onto the substrate 91. Each light-emitting component 92 includes a semiconductor stack 921, an anode pad 922, and a cathode pad 923. The anode pads 922 and 923 are located at the bottom of the light-emitting layer 921 and electrically connected to the pads 94 of the substrate 91. To ensure good connection between the anode pads 922 and 923 of the light-emitting component 92 and the pads 94, solder paste 93 is applied to the substrate 91 at positions corresponding to the pads 94. The direction of light transmission is... Figure 1 As indicated by the arrows, because the distribution area of ​​the light-emitting components 92 is small, if the light emitted by two adjacent light-emitting components 92 is of different colors, light mixing will occur at the intersection of the light rays, causing color deviation. Moreover, because the contact area between the bottom of the anode pads 922 and the cathode pads 923 and the pads 94 on the substrate 91 is small, the light-emitting components 92 can separate and fall off from the substrate 91 when subjected to pushing or pulling forces. Summary of the Invention

[0005] The purpose of this invention is to provide a light-emitting component, its manufacturing method, and a light-emitting device, which on the one hand solves the technical problem of light mixing caused by different colors of light emitted by two adjacent light-emitting components, resulting in color deviation; on the other hand, it solves the technical problem that the contact area between the pads and connectors of the light-emitting diode chip is getting smaller and smaller, the push-pull resistance of the light-emitting diode chip is getting lower and lower, which makes the light-emitting diode chip easy to fall off under force, seriously affecting the display quality.

[0006] To achieve the above objectives, one embodiment of the present invention provides a light-emitting component, comprising: an epitaxial substrate; an N-type material layer disposed on the epitaxial substrate; a light-emitting layer disposed on the N-type material layer; a P-type material layer disposed on the light-emitting layer; a passivation layer covering the P-type material layer, the light-emitting layer, and the N-type material layer, wherein the passivation layer has a first via on the P-type material layer and a second via on the N-type material layer; an anode pad disposed on the passivation layer, the anode pad being electrically connected to the P-type material layer through the first via; and a cathode pad disposed on the passivation layer, the cathode pad being electrically connected to the N-type material layer through the second via, wherein the anode pad extends from the upper surface of the P-type material layer along the passivation layer to the upper surface of the epitaxial substrate, and the cathode pad extends from the upper surface of the P-type material layer along the passivation layer to the surface of the N-type material layer and then to the upper surface of the epitaxial substrate.

[0007] In one embodiment of the light-emitting component described in this application, an auxiliary groove is provided on the upper surface of the epitaxial substrate along the periphery of the epitaxial substrate, and the anode pad and the cathode pad extend into the auxiliary groove.

[0008] In one embodiment of the light-emitting component described in this application, a cutting groove is provided in the auxiliary groove, and the anode pad and the cathode pad extend into the cutting groove.

[0009] In one embodiment of the light-emitting component described in this application, the anode pad partially covers three sides of the epitaxial substrate, and the cathode pad partially covers three sides of the epitaxial substrate.

[0010] In one embodiment of the light-emitting component described in this application, the upper surface of the epitaxial substrate is provided with a cutting groove around the periphery of the epitaxial substrate, and the anode pad and the cathode pad extend into the cutting groove.

[0011] One embodiment of this application provides a light-emitting device, including an array substrate, a plurality of light-emitting components as described above, and a plurality of solder paste layers; the array substrate includes a plurality of paired anode pads and cathode pads, each pair of anode pads and cathode pads being arranged in an array on the array substrate; the plurality of light-emitting components are disposed on the array substrate in a flip-chip manner, wherein the anode pad and the cathode pad of each light-emitting component are electrically connected to a pair of anode pads and the cathode pads respectively; a solder paste layer is disposed between the anode pads and the anode pads, and the solder paste layer partially covers the sidewalls and bottom of the anode pads, and a solder paste layer is disposed between the cathode pads and the cathode pads, and the solder paste layer partially covers the sidewalls and bottom of the cathode pads.

[0012] One embodiment of this application provides a method for fabricating a light-emitting component, comprising the steps of: forming a semiconductor light-emitting stack on an epitaxial substrate; etching the semiconductor light-emitting stack to form a plurality of semiconductor light-emitting monomers; depositing a passivation layer to cover the plurality of semiconductor light-emitting monomers; etching the passivation layer to form a first via and a second via on each of the semiconductor light-emitting monomers; evaporating a metal material to cover the passivation layer, the first via, and the second via; and patterning the metal material to form an anode pad and a cathode pad on each of the semiconductor light-emitting monomers, wherein the anode pad and the cathode pad are disposed opposite to each other, the anode pad extends from the upper surface of the passivation layer along the side of the passivation layer to the upper surface of the epitaxial substrate, and the cathode pad extends from the upper surface of the passivation layer along the other side of the passivation layer to the upper surface of the epitaxial substrate.

[0013] The method for manufacturing a light-emitting component according to an embodiment of this application further includes the steps of: using a laser to cut the epitaxial substrate to form grooves around each semiconductor light-emitting unit; and separating the semiconductor light-emitting units to form the light-emitting component.

[0014] The method for manufacturing a light-emitting component according to an embodiment of this application further includes, before the step of forming a semiconductor light-emitting stack on an epitaxial substrate, the step of: using a laser to cut the epitaxial substrate to form an auxiliary groove on the upper surface of the epitaxial substrate.

[0015] The method for manufacturing a light-emitting component according to an embodiment of this application further includes, after the step of depositing a passivation layer to cover the plurality of semiconductor light-emitting monomers, the step of using a laser to cut the epitaxial substrate to form a cutting groove around each semiconductor light-emitting monomer.

[0016] The beneficial effects of the present invention are that, on the one hand, the provided light-emitting component, the manufacturing method, and the light-emitting device, by extending the pads to the sidewall of the light-emitting component, avoid the mixing of different colored light emitted by two adjacent light-emitting components and thus prevent color deviation, thereby improving the display quality; on the other hand, by applying solder paste to the sidewall and bottom of the pads to form the solder paste layer, the contact area between the solder paste layer and the pads is increased, improving the push-pull resistance of the light-emitting component and preventing it from falling off under force, thereby improving the display quality. Attached Figure Description

[0017] The technical solution and other beneficial effects of this application are presented below in detail with reference to the accompanying drawings and specific embodiments.

[0018] Figure 1 This is a schematic diagram of the structure of an existing light-emitting device.

[0019] Figure 2 This is a cross-sectional view of the light-emitting component provided in Embodiment 1 of this application.

[0020] Figure 3 This is a top view of the light-emitting component provided in Embodiment 1 of this application.

[0021] Figure 4 This is a schematic diagram of the structure of a light-emitting device in Embodiment 1 of this application.

[0022] Figure 5a This is a flowchart of the method for manufacturing the light-emitting component in Embodiment 1 of this application.

[0023] Figure 5b This is a schematic diagram of the fabrication method of the light-emitting component in Embodiment 1 of this application.

[0024] Figure 6 This is a cross-sectional view of the light-emitting component provided in Embodiment 2 of this application.

[0025] Figure 7 This is a top view of the light-emitting component provided in Embodiment 2 of this application.

[0026] Figure 8 This is a schematic diagram of the structure of a light-emitting device in Embodiment 2 of this application.

[0027] Figure 9a This is a flowchart of the method for manufacturing the light-emitting component in Embodiment 2 of this application.

[0028] Figure 9b This is a schematic diagram of the fabrication method of the light-emitting component in Embodiment 2 of this application.

[0029] Figure 10 This is a cross-sectional view of the light-emitting component provided in Embodiment 3 of this application.

[0030] Figure 11 This is a top view of the light-emitting component provided in Embodiment 3 of this application.

[0031] Figure 12 This is a schematic diagram of the structure of a light-emitting device in Embodiment 3 of this application.

[0032] Figure 13a This is a flowchart of the method for manufacturing the light-emitting component in Embodiment 3 of this application.

[0033] Figure 13b This is a schematic diagram of the fabrication method of the light-emitting component in Embodiment 3 of this application.

[0034] Figure 14 This is a cross-sectional view of the light-emitting component provided in Embodiment 4 of this application.

[0035] Figure 15 This is a top view of the light-emitting component provided in Embodiment 4 of this application.

[0036] Figure 16 This is a schematic diagram of the structure of a light-emitting device in Embodiment 4 of this application.

[0037] Figure 17a This is a flowchart of the method for manufacturing the light-emitting component in Embodiment 4 of this application.

[0038] Figure 17b This is a schematic diagram of the manufacturing method of the light-emitting component in Embodiment 4 of this application.

[0039] The components in the diagram are labeled as follows:

[0040] Epitaxial substrate 1, N-type material layer 2, light-emitting layer 3

[0041] P-type material layer 4, passivation layer 5, first via 51.

[0042] Second via 52, anode pad 6, cathode pad 7.

[0043] Light-emitting components 10, 10a, 10b, 10c; auxiliary groove 11; cutting groove 12.

[0044] Array substrate 20, anode pad 21, cathode pad 22

[0045] Solder paste layer 30, light-emitting devices 100, 100a, 100b, 100c,

[0046] Semiconductor light-emitting stack 101, semiconductor light-emitting monomer 102, steps S110-S380. Detailed Implementation

[0047] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0048] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0049] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0050] Example 1

[0051] Please see Figure 2 , Figure 3 In Embodiment 1 of this application, a light-emitting component 10 is provided. Figure 2 This is a cross-sectional view of the light-emitting component 10 provided in Embodiment 1 of this application; Figure 3This is a top view of the light-emitting component 10 provided in Embodiment 1 of this application. The light-emitting component 10 includes an epitaxial substrate 1, an N-type material layer 2 disposed on the epitaxial substrate 1, a light-emitting layer 3 disposed on the N-type material layer 2, a P-type material layer 4 disposed on the light-emitting layer 3, a passivation layer 5 covering the P-type material layer 4, the light-emitting layer 3 and the N-type material layer 2, and an anode pad 6 and a cathode pad 7 disposed on the passivation layer 5; specifically, the passivation layer 5 has a first via 51 on the P-type material layer 4, and the passivation layer 5 has a first via 51 on the N-type material layer 2. The first via 51 is electrically connected to the P-type material layer 4 through the first via 51; the second via 52 is electrically connected to the N-type material layer 2 through the second via 52. The anode pad 6 extends from the upper surface of the P-type material layer 4 along the passivation layer 5 to the upper surface of the epitaxial substrate 1, and the cathode pad 7 extends from the upper surface of the P-type material layer 4 along the passivation layer 5 to the surface of the N-type material and then to the upper surface of the epitaxial substrate 1.

[0052] Since the anode pad 6 and the cathode pad 7 extend along the passivation layer 5, they are disposed on the side surface of the light-emitting component 10 and surround the light-emitting layer 3. The cross-sections of both the anode pad 6 and the cathode pad 7 are L-shaped, thus the anode pad 6 and the cathode pad 7 are located on the side wall and top of the light-emitting component 10. More specifically, refer to... Figure 3 As shown, the anode pad 6 partially covers three sides of the passivation layer 5, and the cathode pad 7 partially covers three sides of the passivation layer 5. Preferably, the anode pad 6 and the cathode pad 7 are arranged in pairs and symmetrically located on both sides of the light-emitting component 10; both the anode pad 6 and the cathode pad 7 are disposed on the sidewall and top of the light-emitting component 10, for reflecting the light emitted by the light-emitting layer 3. The light transmission direction is... Figure 4 The arrows indicate that, due to the high distribution density and small spacing of the light-emitting components 10, if the light emitted by two adjacent light-emitting components 10 is of different colors, light mixing will occur at the intersection of the light rays, causing color deviation. In this application, the anode pad 6 and the cathode pad 7 are preferably made of metal, which can reflect the light emitted by the light-emitting layer 3, so that the reflected light is emitted upwards, thereby avoiding light mixing between two adjacent light-emitting components 10 and causing color deviation.

[0053] Specifically, the light-emitting component 10 is a light-emitting chip, and the P-type material layer 4, the light-emitting layer 3 and the N-type material layer 2 form a semiconductor light-emitting stack of a light-emitting diode chip. The light-emitting chip is a sub-millimeter light-emitting diode (MiniLED) or micro-light-emitting diode (Micro-LED), which can achieve the effect of reducing the size and increasing the brightness.

[0054] The light-emitting layer 3 emits light in red, green, or blue colors, corresponding to the light-emitting component 10, which includes a red light-emitting component, a green light-emitting component, or a blue light-emitting component. This can form red sub-pixels, green sub-pixels, or blue sub-pixels on the display panel.

[0055] Please see Figure 4 In this embodiment, by rotating the light-emitting component 10, multiple light-emitting components 10 are disposed on the array substrate 20 in a flip-chip manner to form a light-emitting device 100. The light-emitting device 100 is specifically used as a lamp board or a display panel.

[0056] Specifically, in this embodiment, the array substrate 20 includes a plurality of paired anode pads 21 and cathode pads 22, each pair of anode pads 21 and cathode pads 22 being arranged in an array on the array substrate 20; wherein the anode pad 6 and cathode pad 7 of each light-emitting component 10 are electrically connected to a pair of anode pads 21 and cathode pads 22 respectively. Preferably, the anode pad 6 and the cathode pad 7 are connected by a solder paste layer 30, wherein a solder paste layer 30 is disposed between the anode pad 6 and the anode pad 21, and the solder paste layer 30 partially covers the sidewall and bottom of the anode pad 6, and a solder paste layer 30 is disposed between the cathode pad 7 and the cathode pad 22, and the solder paste layer 30 partially covers the sidewall and bottom of the cathode pad 7.

[0057] In this way, the solder paste layer 30 covers the sidewalls and bottom of the anode pad 6 and the cathode pad 7, thus achieving the same effect of the solder paste layer 30 surrounding the light-emitting layer 3, thereby preventing light mixing between adjacent light-emitting components 10. It is understood that the anode pad 6 and the cathode pad 7 are separated and insulated from each other, and the solder paste layer 30 on the anode pad 6 and the cathode pad 7 is also insulated from each other.

[0058] In this embodiment, the solder paste layer 30 covers the sidewalls and bottom of the anode pad 6 and the cathode pad 7, which can increase the contact area between the solder paste layer 30 and the anode pad 6 and the cathode pad 7, thereby increasing the connection strength between the anode pad 6 and the cathode pad 7 and the anode pad 21 and the cathode pad 22, improving the push-pull resistance of the light-emitting component 10, preventing it from falling off under force, and thus improving the display quality.

[0059] Please see Figure 5a and Figure 5b Based on the same inventive concept, the present invention also provides a method for manufacturing a light-emitting component 10, which includes the following steps:

[0060] S110: A semiconductor light-emitting stack 101 is disposed on the epitaxial substrate 1; the semiconductor light-emitting stack 101 specifically comprises an N-type material layer 2 disposed on the epitaxial substrate 1, a light-emitting layer 3 disposed on the N-type material layer 2, and a P-type material layer 4 disposed on the light-emitting layer 3.

[0061] S120: Etch the semiconductor light-emitting stack 101 to form a plurality of semiconductor light-emitting monomers 102;

[0062] S130: A passivation layer 5 is deposited to cover the plurality of semiconductor light-emitting monomers 102;

[0063] S140: Etch the passivation layer 5 to form a first via 51 and a second via 52 on each of the semiconductor light-emitting monomers 102;

[0064] S150: Vaporized metal material covers the passivation layer 5, the first via 51 and the second via 52;

[0065] S160: Pattern the metal material to form an anode pad 6 and a cathode pad 7 on each of the semiconductor light-emitting monomers 102, wherein the anode pad 6 and the cathode pad 7 are disposed opposite to each other, the anode pad 6 extends from the upper surface of the passivation layer 5 along the side of the passivation layer 5 to the upper surface of the epitaxial substrate 1, and the cathode pad 7 extends from the upper surface of the passivation layer 5 along the other side of the passivation layer 5 to the upper surface of the epitaxial substrate 1.

[0066] S170: Using a laser to cut the epitaxial substrate 1 to form grooves 103 around each semiconductor light-emitting unit 102; and

[0067] S180: Separate the semiconductor light-emitting monomer 102 to form the light-emitting component 10.

[0068] The groove line 103 facilitates the separation of the semiconductor light-emitting unit 102 in step S180. The method for separating the semiconductor light-emitting unit 102 is, for example, the expansion method, in which the epitaxial substrate 1 with the groove line 103 is attached to the adhesive film. By utilizing the elastic deformation of the adhesive film, while the adhesive film is expanded, the epitaxial substrate 1 will split along the groove line 103, thus completing the separation of the semiconductor light-emitting unit 102.

[0069] Because in step S160, when patterning the metal material to form an anode pad 6 and a cathode pad 7 on each of the semiconductor light-emitting units 102, a specific photomask is used for patterning the metal material, so that the formed anode pad 6 and cathode pad 7 not only cover the first via 51 and the second via 52 respectively, the anode pad 6 also extends from the upper surface of the right side of the passivation layer 5 along the side of the passivation layer 5 to the upper surface of the epitaxial substrate 1, and the cathode pad 7 extends from the upper surface of the left side of the passivation layer 5 along the other side of the passivation layer 5 to the upper surface of the epitaxial substrate 1, the cross-sections of the anode pad 6 and the cathode pad 7 are both L-shaped, which is used to reflect the light emitted by the light-emitting layer 3 when the light-emitting components 10 are used later, thereby avoiding light mixing between two adjacent light-emitting components 10 and causing color deviation. Furthermore, during the fabrication of the light-emitting device, the contact area between the solder paste layer and the anode pad and the cathode pad can be increased, thereby increasing the connection strength between the anode pad and the cathode pad and the anode pad and the cathode pad, improving the push-pull resistance of the light-emitting component, preventing it from falling off under stress, and thus improving the display quality.

[0070] Example 2

[0071] Please see Figure 6 , Figure 7 Embodiment 2 of this application provides a light-emitting component 10a, which includes all the technical features of Embodiment 1. The difference is that the light-emitting component 10a in Embodiment 2 further has an auxiliary groove 11 provided on the upper surface of the epitaxial substrate 1 along the periphery of the epitaxial substrate 1, and the anode pad 6 and the cathode pad 7 extend into the auxiliary groove 11. This further allows the anode pad 6 and the cathode pad 7 to cover the periphery of the epitaxial substrate 1, thereby increasing the range of the anode pad 6 and the cathode pad 7 covering the light-emitting layer 3, thereby further increasing the chance of light being reflected towards the epitaxial substrate 1 between the anode pad 6 and the cathode pad 7, and avoiding light mixing between two adjacent light-emitting components 10a.

[0072] Similarly, please refer to Figure 7 The anode pad 6 partially covers three sides of the passivation layer 5, and the cathode pad 7 partially covers three sides of the passivation layer 5. Since the epitaxial substrate 1 has auxiliary grooves 11 around its perimeter, the passivation layer 5 also covers the auxiliary grooves 11, and the anode pad 6 and the cathode pad 7 also partially cover three sides of the epitaxial substrate 1, respectively.

[0073] Please see Figure 8In this embodiment, by rotating the light-emitting component 10a, multiple light-emitting components 10a are disposed on the array substrate 20 in a flip-chip manner to form a light-emitting device 100a. The principle of the light-emitting device 100a is the same as that in Embodiment 1, and the structural difference lies only in the light-emitting component 10a. For details, please refer to the content of Embodiment 1 above, which will not be repeated here. The solder paste layer 30 covers the sidewalls and bottom of the anode pad 6 and the cathode pad 7, which can also increase the length of the solder paste layer 30 covering the light-emitting layer 3, thereby further avoiding light mixing between two adjacent light-emitting components 10a.

[0074] In this embodiment, because the auxiliary groove 11 is provided, and the anode pad 6 and the cathode pad 7 extend into the auxiliary groove 11, it can provide a larger lateral light reflection area and a larger solder paste layer contact area than in Embodiment 1, thus providing better anti-light mixing ability and anti-pull force performance.

[0075] Please see Figure 9a , 9b Based on the same inventive concept, this embodiment also provides a method for manufacturing a light-emitting component 10a, including steps S207 to S280, wherein steps S210 to S260 are the same as steps S110 to S160 in Embodiment 1. The method for manufacturing the light-emitting component 10a in this embodiment is similar to the method for manufacturing the light-emitting component 10 in Embodiment 1, except that before step S210, which involves forming a semiconductor light-emitting stack 101 on the epitaxial substrate 1, step S207 is included: using a laser to cut the epitaxial substrate 1 to form auxiliary grooves 11 around each semiconductor light-emitting unit 102. Therefore, during vapor deposition in step S250, the metal material can be filled into the auxiliary grooves 11. Subsequently, in step S260, the metal material is patterned to form an anode pad 6 and a cathode pad 7 on each semiconductor light-emitting unit 102.

[0076] Since the anode pad 6 and the cathode pad 7 extend into the auxiliary groove 11, the anode pad 6 and the cathode pad 7 can further cover the surrounding surface of the epitaxial substrate 1, thereby increasing the area around the light-emitting layer 3 covered by the anode pad 6 and the cathode pad 7. This further increases the chance of light being reflected to the epitaxial substrate 1 between the anode pad 6 and the cathode pad 7, and avoids the mixing of light emitted laterally between two adjacent light-emitting components 10a.

[0077] Example 3

[0078] Please see Figure 10 , Figure 11This application provides a light-emitting component 10b in embodiment 3, which includes all the technical features of embodiment 2. The difference is that the light-emitting component 10b in embodiment 3 further includes a cutting groove 12 in the auxiliary groove 11, and the anode pad 6 and the cathode pad 7 extend into the cutting groove 12. This allows the anode pad 6 and the cathode pad 7 to cover the surrounding surface of the epitaxial substrate 1 and fill the auxiliary groove 11 and the cutting groove 12, thereby increasing the area covered by the anode pad 6 and the cathode pad 7 in the light-emitting component 10b. This further increases the chance of laterally emitted light being reflected between the anode pad 6 and the cathode pad 7, and avoids light mixing between two adjacent light-emitting components 10b.

[0079] Similarly, the anode pad 6 partially covers three sides of the passivation layer 5, and the cathode pad 7 partially covers three sides of the passivation layer 5. Since the epitaxial substrate 1 has auxiliary grooves 11 around its perimeter, the passivation layer 5 also covers the auxiliary grooves 11. The auxiliary grooves 11 also have cutting grooves 12, which allow the anode pad 6 and the cathode pad 7 to penetrate deeper into the epitaxial substrate 1 during deposition, covering a larger area of ​​the epitaxial substrate 1's side surface. Similar to Embodiment 2, the anode pad 6 and the cathode pad 7 also partially cover three sides of the epitaxial substrate 1, respectively.

[0080] Please see Figure 12 In this embodiment, by rotating the light-emitting component 10b, multiple light-emitting components 10b are disposed on the array substrate 20 in a flip-chip manner to form a light-emitting device 100b. The principle of the light-emitting device 100b is the same as that in Embodiment 2, and the only difference in structure is the light-emitting component 10b. For details, please refer to the content of Embodiment 2 above, which will not be repeated here. The solder paste layer 30 covers the sidewalls and bottom of the anode pad 6 and the cathode pad 7, which can also increase the length of the solder paste layer 30 covering the light-emitting layer 3, thereby further avoiding light mixing between two adjacent light-emitting components 10b.

[0081] In this embodiment, due to the provision of the auxiliary groove 11 and the cutting groove 12, the anode pad 6 and the cathode pad 7 extend deeper into the cutting groove 12, thus providing a larger lateral light reflection area and a larger solder paste layer contact area than in Embodiment 2, and providing better anti-light mixing ability and anti-pull force performance.

[0082] Please see Figure 13a and Figure 13bBased on the same inventive concept, this embodiment also provides a method for manufacturing a light-emitting component 10b, including steps S207 to S280. The difference between the method for manufacturing the light-emitting component 10b in this embodiment and the method for manufacturing the light-emitting component 10a in embodiment 2 is that, after step S230 of depositing a passivation layer to cover the plurality of semiconductor light-emitting units, and before step S250 of evaporating metal material to cover the passivation layer 5, the first via 51 and the second via 52, step S247 is also included: using a laser to cut the epitaxial substrate 1 to form a cutting groove 12 around each semiconductor light-emitting unit 102.

[0083] Specifically, the cutting groove 12 is provided in the auxiliary groove 11. During vapor deposition, metal material is filled into the auxiliary groove 11 and the cutting groove 12. This causes the anode pad 6 and the cathode pad 7 to extend into the cutting groove 12, thereby increasing the area covered by the anode pad 6 and the cathode pad 7 on the light-emitting layer 3. This further increases the chance of light being reflected between the anode pad 6 and the cathode pad 7, preventing light mixing between two adjacent light-emitting components 10b.

[0084] The cutting groove 12 in this embodiment has the same function as the groove line 103 in embodiment 1. Therefore, step S270 of embodiment 2 is omitted in this embodiment. The essential difference between the manufacturing method of the light-emitting component in this embodiment and that in embodiment 2 is the different order of the laser cutting steps in the whole method. No steps are added, but a more effective light-emitting component structure can be provided.

[0085] The laser cutting step S247 can be performed before or after the opening step S240 of the first and second vias. Performing step S247 before step S240 can prevent debris generated during laser cutting from flying into the first via 51 and the second via 52 and affecting the electrical properties of the subsequent first pad 6 and second pad 7.

[0086] Example 4

[0087] Please see Figure 14 , Figure 15This application provides a light-emitting component 10c in embodiment 4, which includes all the technical features of embodiment 1. The difference is that the light-emitting component 10c in embodiment 4 further has a cutting groove 12 on the epitaxial substrate 1, and the anode pad 6 and the cathode pad 7 extend into the cutting groove 12. This allows the anode pad 6 and the cathode pad 7 to cover the surrounding surface of the epitaxial substrate 1 and fill the cutting groove 12, thereby increasing the area covered by the anode pad 6 and the cathode pad 7 on the light-emitting component 10c. This further increases the chance of laterally emitted light being reflected between the anode pad 6 and the cathode pad 7, and avoids light mixing between two adjacent light-emitting components 10c.

[0088] Similarly, the anode pad 6 partially covers three sides of the passivation layer 5, and the cathode pad 7 partially covers three sides of the passivation layer 5. Because the epitaxial substrate 1 has cutting grooves 12 around its perimeter, the anode pad 6 and the cathode pad 7 can penetrate deeper into the epitaxial substrate 1 during deposition, covering a larger area of ​​the side surface of the epitaxial substrate 1. Similar to Embodiment 2, the anode pad 6 and the cathode pad 7 will also partially cover three sides of the epitaxial substrate 1, respectively.

[0089] Please see Figure 16 In this embodiment, by rotating the light-emitting component 10c, multiple light-emitting components 10c are disposed on the array substrate 20 in a flip-chip manner to form a light-emitting device 100c. The principle of the light-emitting device 100c is the same as that in Embodiment 2, and the only difference in structure is the light-emitting component 10c. For details, please refer to the content of Embodiment 2 above, which will not be repeated here. The solder paste layer 30 covers the sidewalls and bottom of the anode pad 6 and the cathode pad 7, which can also increase the range of the solder paste layer 30 covering the light-emitting layer 3, thereby further avoiding light mixing between two adjacent light-emitting components 10.

[0090] In this embodiment, because the cutting groove 12 is provided, the anode pad 6 and the cathode pad 7 extend deeply into the cutting groove 12, thus providing a larger lateral light reflection area and a larger solder paste layer contact area than in Embodiment 1, and providing better anti-light mixing ability and anti-pull force performance.

[0091] Please see Figure 17a and Figure 17bBased on the same inventive concept, this embodiment also provides a method for manufacturing a light-emitting component 10c, including steps S310 to S380. The difference between the method for manufacturing the light-emitting component 10c in this embodiment and the method for manufacturing the light-emitting component 10 in Embodiment 1 is that, after the step S130 of depositing a passivation layer to cover the plurality of semiconductor light-emitting units, and before the step S150 of evaporating metal material to cover the passivation layer 5, the first via 51 and the second via 52, step S347 is further included: using a laser to cut the epitaxial substrate 1 to form a cutting groove 12 around each semiconductor light-emitting unit 102.

[0092] Specifically, the dicing groove 12 is formed on the epitaxial substrate 1, and during vapor deposition, metal material is filled into the dicing groove 12. This causes the anode pad 6 and the cathode pad 7 to extend into the dicing groove 12, thereby increasing the area covered by the anode pad 6 and the cathode pad 7 on the light-emitting layer 3. This further increases the chance of light being reflected between the anode pad 6 and the cathode pad 7, preventing light mixing between two adjacent light-emitting components 10c.

[0093] The cutting groove 12 in this embodiment has the same function as the groove line 103 in Embodiment 1. Therefore, step S170 of Embodiment 1 is omitted in this embodiment. The essential difference between the manufacturing method of the light-emitting component in this embodiment and that in Embodiment 1 is the different order of the laser cutting steps in the whole method. No steps are added, but a more effective light-emitting component structure can be provided.

[0094] The laser cutting step S347 can be performed before or after the opening step S340 of the first and second vias. Performing step S347 before step S340 can prevent debris generated during laser cutting from flying into the first via 51 and the second via 52 and affecting the electrical properties of the subsequent first pad 6 and second pad 7.

[0095] The beneficial effects of the present invention are that it provides a light-emitting component and its manufacturing method and light-emitting device. On the one hand, by setting the pads on the sidewalls and bottom of the light-emitting layer to form the light-emitting component, the color deviation caused by the mixing of different colored light emitted by two adjacent light-emitting components is avoided, thereby improving the display quality. On the other hand, by applying solder paste to the sidewalls and bottom of the pads to form the solder paste layer, the contact area between the solder paste layer and the pads of the driving substrate is increased, thereby improving the push-pull resistance of the light-emitting component and preventing it from falling off under force, thereby improving the display quality.

[0096] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0097] The above provides a detailed description of an electronic device provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A light-emitting component, characterized in that, include: epitaxial substrate; An N-type material layer disposed on the epitaxial substrate; A light-emitting layer disposed on the N-type material layer; A P-type material layer disposed on the light-emitting layer; A passivation layer covers the P-type material layer, the light-emitting layer, and the N-type material layer. The passivation layer has a first via on the P-type material layer and a second via on the N-type material layer. An anode pad is disposed on the passivation layer, and the anode pad is electrically connected to the P-type material layer through the first via. as well as The cathode pad is disposed on the passivation layer and electrically connected to the N-type material layer through the second via. The anode pad extends from the upper surface of the P-type material layer along the passivation layer to the upper surface of the epitaxial substrate, and the cathode pad extends from the upper surface of the P-type material layer along the passivation layer to the surface of the N-type material layer and then to the upper surface of the epitaxial substrate. The upper surface of the epitaxial substrate has a cutting groove along the periphery of the epitaxial substrate; The anode pad extends to fill the cut groove, and the anode pad partially covers three sides of the epitaxial substrate; The cathode pad extends to fill the diced groove, and the cathode pad partially covers three sides of the epitaxial substrate; wherein The upper surface of the epitaxial substrate has an auxiliary groove along its periphery, and the anode pad and the cathode pad extend into the auxiliary groove; wherein the cutting groove is disposed on the bottom wall of the auxiliary groove and communicates with the auxiliary groove.

2. A light-emitting device, characterized in that, include: An array substrate includes a plurality of pairs of anode pads and cathode pads, each pair of anode pads and cathode pads being arranged in an array on the array substrate; Multiple light-emitting components as described in claim 1 are disposed on the array substrate in a flip-chip manner, wherein the anode pad and the cathode pad of each light-emitting component are electrically connected to a pair of anode pads and the cathode pads, respectively; as well as Multiple solder paste layers, wherein a solder paste layer is disposed between the anode pad and the anode junction pad and the solder paste layer partially covers the sidewall and bottom of the anode pad, and a solder paste layer is disposed between the cathode pad and the cathode junction pad and the solder paste layer partially covers the sidewall and bottom of the cathode pad.

3. A method for manufacturing a light-emitting component, used to manufacture the light-emitting component as described in claim 1, characterized in that, Including the following steps: A semiconductor light-emitting stack is disposed on an epitaxial substrate; Etch the semiconductor light-emitting stack to form a plurality of semiconductor light-emitting monomers; A passivation layer is deposited to cover the plurality of semiconductor light-emitting monomers; The passivation layer is etched to form a first via and a second via on each of the semiconductor light-emitting monomers; A vapor-deposited metal material covers the passivation layer, the first via, and the second via; as well as The metal material is patterned to form an anode pad and a cathode pad on each of the semiconductor light-emitting monomers, wherein the anode pad and the cathode pad are disposed opposite to each other, the anode pad extends from the upper surface of the passivation layer along the side of the passivation layer to the upper surface of the epitaxial substrate, and the cathode pad extends from the upper surface of the passivation layer along the other side of the passivation layer to the upper surface of the epitaxial substrate. The process includes, after the step of depositing a passivation layer to cover the plurality of semiconductor light-emitting monomers, the step of using a laser to cut the epitaxial substrate to form a cutting groove around each semiconductor light-emitting monomer.

4. The method for manufacturing a light-emitting component according to claim 3, characterized in that, It also includes the following steps: The epitaxial substrate is cut with a laser to form grooves around each semiconductor light-emitting unit; as well as The semiconductor light-emitting monomer is separated to form the light-emitting component.

5. The method for manufacturing a light-emitting component according to claim 3, characterized in that, Before the step of setting the semiconductor light-emitting stack on the epitaxial substrate, the method further includes the step of: using a laser to cut the epitaxial substrate to form an auxiliary groove on the upper surface of the epitaxial substrate.

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