RFID transponders and methods for operating RFID transponders

Abstract

According to a first aspect of this disclosure, a radio frequency identification (RFID) transponder is provided, comprising a charge pump and at least one functional component, wherein: the charge pump is configured to convert an input voltage into an output voltage and supply the output voltage to the functional component; the functional component is configured to perform the function of the RFID transponder using the output voltage of the charge pump; wherein the charge pump includes a diode or a switching transistor and at least one capacitor coupled to the diode or the switching transistor, and wherein the capacitor is configured to compensate for impedance variations of the diode or the switching transistor. According to a second aspect of this disclosure, a corresponding method for operating an RFID transponder is contemplated.

Description

Technical Field

[0001] This disclosure relates to a radio frequency identification (RFID) transponder. Furthermore, this disclosure relates to a corresponding method for operating an RFID transponder. Background Technology

[0002] Today, Radio Frequency Identification (RFID) transponders are widely used in various industrial and commercial sectors and for a wide range of applications. For example, an RFID transponder can manifest as a so-called RFID tag or RFID card. It should be noted that in this disclosure, Near Field Communication (NFC) transponders are considered as a specific type of RFID transponder. Therefore, the principles described herein can also be applied to NFC transponders. RFID transponders typically include a charge pump configured to boost the input voltage of the transponder to the appropriate operating voltage for the transponder's components. Summary of the Invention

[0003] According to a first aspect of this disclosure, a radio frequency identification (RFID) transponder is provided, comprising a charge pump and at least one functional component, wherein: the charge pump is configured to convert an input voltage into an output voltage and supply the output voltage to the functional component; the functional component is configured to perform the function of the RFID transponder using the output voltage of the charge pump; wherein the charge pump includes a diode or a switching transistor and at least one capacitor coupled to the diode or the switching transistor, and wherein the capacitor is configured to compensate for impedance variations of the diode or the switching transistor.

[0004] In one or more embodiments, the charge pump includes a plurality of capacitors coupled to the diode or switching transistor, wherein the capacitors have different types, values ​​and / or geometries.

[0005] In one or more embodiments, the RFID transponder further includes a charge pump controller configured to connect and disconnect a corresponding capacitor from the diode or switching transistor.

[0006] In one or more embodiments, the charge pump controller is further configured to connect and disconnect at least one of the capacitors from the clock input line of the charge pump.

[0007] In one or more embodiments, the RFID transponder further includes at least one sensor configured to sense environmental parameters, manufacturing parameters, and / or functional parameters of the RFID transponder.

[0008] In one or more embodiments, the RFID transponder further includes a varactor diode configured to change the value of the capacitor.

[0009] In one or more embodiments, the varactor diode is configured to change the value of the capacitor depending on environmental parameters, manufacturing parameters, and / or functional parameters sensed by the RFID transponder.

[0010] In one or more embodiments, the capacitor is configured to compensate for changes in the impedance of the diode or switching transistor by having capacitance, the capacitance increasing or decreasing in response to changes in the input voltage at substantially the same rate as the resistance of the diode or switching transistor decreases or increases accordingly.

[0011] According to a second aspect of this disclosure, a method for operating an RFID transponder is envisioned, the method comprising: converting an input voltage into an output voltage by a charge pump of the RFID transponder, wherein the charge pump includes a diode or a switching transistor and at least one capacitor coupled to the diode or the switching transistor, and wherein the capacitor compensates for impedance variations of the diode or the switching transistor; supplying the output voltage by the charge pump to at least one functional component of the RFID transponder; and having the functional component perform a function of the RFID transponder using the output voltage of the charge pump.

[0012] In one or more embodiments, the charge pump includes a plurality of capacitors coupled to the diode or switching transistor, wherein the capacitors have different types, values ​​and / or geometries.

[0013] In one or more embodiments, the method further includes connecting and disconnecting a corresponding capacitor with the diode or switching transistor by a charge pump controller included in the RFID transponder.

[0014] In one or more embodiments, the method further includes the charge pump controller connecting and disconnecting at least one of the capacitors from the clock input line of the charge pump.

[0015] In one or more embodiments, the method further includes sensing environmental parameters, manufacturing parameters, and / or functional parameters of the RFID transponder by at least one sensor included in the RFID transponder.

[0016] In one or more embodiments, the method further includes changing the value of the capacitor by a varactor diode included in the RFID transponder.

[0017] In one or more embodiments, the varactor diode changes the value of the capacitor depending on the environmental parameters, manufacturing parameters, and / or functional parameters sensed by the RFID transponder. Attached Figure Description

[0018] The embodiments will be described in more detail with reference to the accompanying drawings, in which:

[0019] Figure 1 An example of a charge pump is shown;

[0020] Figure 2 An illustrative embodiment of an RFID transponder is shown;

[0021] Figure 3 An illustrative embodiment of a method for operating an RFID transponder is shown;

[0022] Figure 4A An illustrative embodiment of a charge pump assembly is shown;

[0023] Figure 4B This illustrates the relationship between the input voltage and output current of the diode in a charge pump assembly.

[0024] Figure 4C This shows the relationship between the capacitance of the capacitor in the charge pump assembly and the input voltage.

[0025] Figure 5A An illustrative embodiment of a charge pump assembly is shown;

[0026] Figure 5B This illustrates the relationship between the input voltage and output current of the diode in a charge pump assembly.

[0027] Figure 5C This shows the relationship between the capacitance of the corresponding capacitor in the charge pump assembly and the input voltage;

[0028] Figure 6A Further illustrative embodiments of the charge pump assembly are shown;

[0029] Figure 6B This illustrates the relationship between the input voltage and output current of the diode in a charge pump assembly.

[0030] Figure 6C This shows the relationship between the capacitance of the corresponding capacitor in the charge pump assembly and the input voltage;

[0031] Figure 7A Further illustrative embodiments of the charge pump assembly are shown;

[0032] Figure 7B This illustrates the relationship between the input voltage and output current of the diode in a charge pump assembly.

[0033] Figure 7C This shows the relationship between the capacitance of the capacitor in the charge pump assembly and the input voltage. Detailed Implementation

[0034] Today, Radio Frequency Identification (RFID) transponders are widely used in various industrial and commercial sectors and for a wide range of applications. For example, an RFID transponder can manifest as a so-called RFID tag or RFID card. It should be noted that in this disclosure, Near Field Communication (NFC) transponders are considered as a specific type of RFID transponder. Therefore, the principles described herein can also be applied to NFC transponders. RFID transponders typically include a charge pump configured to boost the input voltage of the transponder to the appropriate operating voltage for the transponder's components.

[0035] RFID communication can be based on inductive coupling. Communication between an RFID reader and an RFID transponder, such as an RFID tag, is typically achieved using load modulation and can be broken down into a forward link and a return link. More specifically, the RFID reader transmits commands to the RFID transponder via the forward link, and the RFID transponder transmits responses to those commands back to the RFID reader via the return link. The RFID transponder contains a modulator that load modulates the carrier signal. Different types of load modulation exist, such as active load modulation (ALM) and passive load modulation (PLM). The return link can also be referred to as backscattering the signal or, more simply, "backscattering."

[0036] In RFID applications, charge pumps are typically used as power sources in the voltage domain in which the functional components of the RFID transponder operate. The impedance of such charge pumps can be highly power-dependent and therefore significantly dependent on the input voltage fed to the pump. It should be noted that the input power range of charge pumps can be very large. This can cause impedance matching to vary significantly with power. Specifically, high field strength can generate high input power, which in turn causes large impedance variations. Therefore, the strength of the RFID transponder's return link (i.e., backscattering strength) can also be significantly reduced due to detuning caused by impedance variations. Furthermore, proper matching and antenna design can be difficult to achieve due to the different impedance values ​​at different operating points.

[0037] Figure 1 An example of a charge pump 100 for an RFID transponder is shown. The charge pump 100 includes a plurality of diodes 102, 104, 106, and 108, each of which is coupled to capacitors 110, 112, 114, and 116. The charge pump 100 is configured to convert an input voltage Vin to an output voltage Vout using the plurality of diodes 102, 104, 106, and 108 and the corresponding capacitors 110, 112, 114, and 116. The charge pump 100 further includes a clock line clk, which is directly coupled to and coupled via an inverter 118 to capacitors 102, 104, 106, and 108. It should be noted that in RFID applications, the clk signal can be derived from the RF field.

[0038] Specifically, charge pump 100 is an example of a typical charge pump in which timed charging and discharging of one or more capacitors is performed. This allows for efficient conversion of low input voltages to higher voltages. More specifically, a series of stages or components can be implemented in the charge pump, each of which consists of a diode and an associated capacitor. In this embodiment, the capacitor of each stage is loaded via a diode. Each stage of the charge pump is typically designed in a manner that achieves a certain efficiency under predetermined conditions. However, due to the nonlinear characteristics of diodes, the impedance of the diodes can vary significantly with power, which in turn causes variations in the overall efficiency and impedance of the charge pump. This can lead to suboptimal and complex tuning of the RFID transponder. Therefore, it may be necessary to compensate for detuning effects, thereby contributing to higher system performance over a wider input voltage range.

[0039] The present discussion focuses on RFID transponders and corresponding methods for operating RFID transponders, which help reduce the impact of charge pump impedance variations with power, thereby avoiding a significant reduction in the strength of the return link due to such variations, and further avoiding the potential difficulty in achieving proper matching and antenna design.

[0040] Figure 2 An illustrative embodiment of an RFID transponder 200 is shown. The transponder 200 includes a charge pump 202 and at least one functional component 204. The charge pump 202 is configured to convert an input voltage of the RFID transponder 200 (e.g., a voltage extracted from a radio frequency field generated by a reader near the transponder) into a higher output voltage and supply the output voltage to the functional component 204. Furthermore, the functional component 204 is configured to perform the function of the RFID transponder 200 using the output voltage of the charge pump 202. Additionally, the charge pump 202 includes a diode and at least one capacitor (not shown), wherein the capacitor is configured to compensate for variations in the impedance of the diode. Therefore, instead of... Figure 1 The capacitor of the charge pump shown herein, or in addition to the capacitor described herein, may be selected as a capacitor capable of compensating for impedance changes in the diode. It should be noted that the charge pump 202 may include a switching transistor instead of a diode. In this case, instead of the nonlinear resistance of the diode, a nonlinear characteristic of the transistor's on-state resistance (RON) may occur. Therefore, the capacitor may be configured to compensate for impedance changes in the switching transistor, rather than impedance changes in the diode. Therefore, in the case of a charge pump assembly with a diode as described herein, a charge pump assembly with a switching transistor may also be used. Therefore, the principles described herein also apply to charge pumps that include switching transistors instead of diodes.

[0041] In other words, the capacitor has reverse impedance characteristics, and in a sense, the capacitor helps to compensate for impedance changes in the diode coupled to the capacitor. The diode and one or more capacitors coupled to the diode can together constitute a charge pump stage or charge pump assembly. Therefore, by compensating for the impedance changes in the diode, the overall impedance change of the charge pump 202 can also be reduced. It should be noted that the charge pump 202 may include additional stages or assemblies (not shown), each of which includes a diode operatively coupled to one or more capacitors of the described type.

[0042] In one or more embodiments, the charge pump includes a plurality of capacitors coupled to a diode, wherein said capacitors have different types, values, and / or geometries. In this way, compensation for impedance variations in the diode can be improved. This, in turn, further reduces the overall impedance variation of the charge pump. It should be noted that one or more of the plurality of capacitors may have reverse impedance characteristics as described above. Furthermore, in one or more embodiments, the RFID transponder additionally includes a charge pump controller configured to connect and disconnect a respective capacitor from the diode. In this way, compensation for impedance variations in the diode can be optimized. This, in turn, further reduces the overall impedance variation of the charge pump. And, in one or more embodiments, the charge pump controller is configured to connect and disconnect at least one of the plurality of capacitors from the clock input line of the charge pump. In this way, compensation for impedance variations in the diode can be further improved. This, again, further reduces the overall impedance variation of the charge pump.

[0043] In one or more embodiments, the RFID transponder further includes at least one sensor configured to sense environmental parameters, manufacturing parameters, and / or functional parameters of the RFID transponder. Compensation for impedance variations can be made based on the values ​​of these parameters. In this way, compensation can be further improved. Furthermore, in one or more embodiments, the RFID transponder further includes a varactor diode configured to change the value of one or more capacitors coupled to the diode. In this way, compensation for impedance variations of the diode can be further optimized. For example, the measurement results of the sensors mentioned above can be used as input to the varactor diode or as input to a switch that connects and disconnects at least one of the capacitors to the clock input line of a charge pump.

[0044] In one or more embodiments, the capacitor is configured to compensate for changes in the diode's impedance by having capacitance that increases or decreases in response to changes in the input voltage at substantially the same rate as the diode's resistance decreases or increases accordingly. In this way, it helps to compensate for changes in the diode's impedance. In practical implementations, a capacitor can be selected that ensures the time constant τ = R·C of the diode-capacitor combination does not change significantly in response to changes in the input voltage. It should be noted that R represents the diode's resistance, and C represents the approximate combined effect of the diode's capacitance and the capacitance present on the capacitor. When τ remains constant, changes in the diode's impedance are adequately compensated, and the efficiency also remains constant. Those skilled in the art will appreciate that different types of capacitors can meet this requirement.

[0045] Figure 3 An illustrative embodiment of a method 300 for operating an RFID transponder of the described type is shown. Method 300 includes the following steps: At 302, a charge pump of the RFID transponder converts an input voltage into an output voltage, wherein the charge pump includes at least one capacitor with anti-impedance characteristics to compensate for impedance variations in the charge pump's diode. At 304, the charge pump supplies the output voltage to at least one functional component of the RFID transponder. Furthermore, at 306, the functional component uses the output voltage of the charge pump to perform a function of the RFID transponder. It should be noted that the function can be a typical function performed by the RFID transponder, such as load modulation of a carrier signal as previously mentioned, which generates a backscattered signal. As mentioned above, the anti-impedance characteristics of the capacitor help compensate for impedance variations in the diode coupled to the capacitor, which in turn helps reduce the overall impedance of the charge pump.

[0046] Figure 4A An illustrative embodiment of a charge pump assembly 400 (i.e., a charge pump stage) is shown. The charge pump assembly 400 includes a diode 402 and a capacitor 404 operatively coupled to the diode 402. The capacitor 404 has reverse impedance characteristics. Figure 4B Graph 406 shows the relationship between the input voltage and output current of diode 402. Furthermore, Figure 4C A diagram 408 illustrates the relationship between the capacitance of capacitor 404 and the input voltage. Specifically, according to this disclosure, a capacitor with reverse impedance characteristics across the input voltage is used. Thus, the aforementioned detuning effect can be limited or neutralized. In a practical embodiment, the time constant (τ) for loading the charge pump stage does not change significantly in response to variations in the input voltage. Specifically, τ is defined as follows: τ = R·C, where R is the resistance of the diode and C is the capacitance present in the capacitor. By using such a capacitor that ensures τ remains constant, variations in the diode impedance are appropriately compensated. The compensation can be linear or non-linear.

[0047] Charge pump stages typically consist of a diode or switching transistor and at least one capacitor. In the ultra-high frequency (UHF) domain, the capacitor is typically a metal-to-metal capacitor or a polysilicon-to-polysilicon capacitor to avoid nonlinearity, voltage dependence, temperature dependence, and large variations caused by processing. Disadvantageously, these nonlinearities and other constraints may not be unavoidable in diodes or switching transistors. Diodes can exhibit strong process dependence, temperature dependence, and voltage dependence. Furthermore, this dependence is primarily nonlinear because the characteristics are largely dependent on the bias point. Moreover, in the UHF domain, the intrinsic capacitance of the diode becomes relevant and significantly affects the characteristics of the charge pump. These drawbacks can be avoided by selecting a capacitor that ensures an inverse relationship between the diode's resistance and the capacitance across the capacitor.

[0048] It should be noted that the capacitors of the described types can supplement or replace the aforementioned metal-metal or polysilicon-polysilicon capacitors in a way that removes or reduces nonlinearity and / or other dependencies. Non-limiting examples of suitable capacitors include GO2 capacitors, which are voltage-dependent capacitors. Depending on the connection orientation, they can effectively compensate for diode impedance variations. Other non-limiting examples of suitable capacitors include GO1 or SGO capacitors with a single gate oxide thickness, GO2 or DGO capacitors with a double HV thickness, and GO3 or TGO capacitors with a triple HV thickness. Furthermore, as mentioned above, diode impedance variations can be compensated by using different types of capacitors. In this case, different types of capacitors may include, for example, polysilicon-N-well, polysilicon-P-well, polysilicon-polysilicon (ONO), polysilicon-contact, and metal-metal capacitors.

[0049] Figure 5A Another illustrative embodiment of a charge pump assembly 500 is shown. The charge pump assembly 500 includes a diode 502 operatively coupled to a plurality of capacitors 504, 506, 508, 510, and 512. The capacitors 504, 506, 508, 510, and 512 may have different types, values, and / or geometries. Furthermore, the capacitors 504, 506, 508, 510, and 512 may have different reverse impedance characteristics. Figure 5B Graph 514 shows the relationship between the input voltage and output current of diode 502. Furthermore, Figure 5C Diagram 516 illustrates the relationship between the capacitance of the respective capacitors 504, 506, 508, 510, and 512 and the input voltage. Specifically, the charge pump assembly 500 represents an additional embodiment that can produce better compensation and increased linearization. More specifically, combinations of several capacitors of different types, values, and geometries can provide further constraints on detuning effects. For example, different voltage characteristics can be added or combined to achieve better impedance compensation.

[0050] Figure 6A A further illustrative embodiment of the charge pump assembly 600 is shown. The charge pump assembly 600 includes a diode 602 operatively coupled to a plurality of capacitors 604, 606, 608, 610, and 612. Similarly, capacitors 604, 606, 608, 610, and 612 may have different types, values, and / or geometries. Furthermore, capacitors 604, 606, 608, 610, and 612 may have different reverse impedance characteristics. Additionally, a charge pump controller (not shown) is configured to connect and disconnect the respective capacitors 604, 606, 608, 610, and 612 from the diode 602. Additionally, the charge pump controller can connect and disconnect capacitor 610 from the clock line of the charge pump. Note that the symbol “X” indicates that the capacitor can be disconnected. Furthermore, dashed lines indicate that the geometry of the capacitor can be varied. Figure 6B Graph 614 shows the relationship between the input voltage and output current of diode 602 in charge pump assembly 600, and... Figure 6C Graph 616 shows the relationship between the capacitance of the corresponding capacitors 604, 606, 608, 610, and 612 of the charge pump assembly 600 and the input voltage.

[0051] Specifically, in these embodiments, one or more capacitors 604, 606, 608, 610, 612 can be dynamically added to or removed from the charge pump impedance. These capacitors may have the same type, size, or geometry, or, as shown, capacitors 604, 606, 608, 610, 612 may have different types, sizes, and / or geometries. The addition and removal of capacitors 604, 606, 608, 610, 612 can be triggered, for example, by a command sent by a reader. Alternatively, or additionally, sensor levels or indicators can be used to trigger the addition and removal of capacitors 604, 606, 608, 610, 612. This allows for command-dependent impedance compensation. It should be noted that negative compensation (detuned gain) can also be implemented. The location where the corresponding capacitors 604, 606, 608, 610, 612 can be disconnected may also be optional. In other words, all or some of capacitors 604, 606, 608, 610, and 612 can be disconnected and reconnected. Furthermore, capacitors 604, 606, 608, 610, and 612 can be disconnected and reconnected at the top plate (i.e., where capacitors 604, 606, 608, 610, and 612 are coupled to diode 602), at the bottom plate (i.e., where capacitors 604, 606, 608, 610, and 612 are coupled to the clock line), or at both the top and bottom plates. The choice of the disconnectable location for capacitors 604, 606, 608, 610, and 612 can take into account variations in the specific parasitic characteristics of the charge pump. Additionally, sensors or indicators can sense and monitor environmental parameters (e.g., temperature, humidity, light), manufacturing process results (e.g., threshold voltage, resistivity, capacitance of a particular component), or functional parameters (e.g., power, voltage, current, charge) belonging to or relating to the RFID transponder.

[0052] Figure 7A A further illustrative embodiment of the charge pump assembly 700 is shown. The charge pump assembly 700 includes a diode 702 and a capacitor 704 operatively coupled to the diode 702. The capacitor 704 has reverse impedance characteristics. Furthermore, the charge pump assembly 700 includes a varactor diode. In this embodiment, the varactor diode includes the diode 702, the capacitor 704, and a controllable voltage source 706. Therefore, the capacitor 704 has a variable capacitance that can be varied by means of the controllable voltage source 706. Figure 7B A diagram 708 is shown illustrating the relationship between the input voltage and output current of diode 702 in charge pump assembly 700. Furthermore, Figure 7CA diagram 710 illustrates the relationship between the capacitance of capacitor 704 in charge pump assembly 700 and the input voltage. Specifically, in these embodiments, a varactor diode and a control signal are used to dynamically change the capacitor value and thus the impedance of the charge pump. The voltage signal can be static, dynamic, or a combination of both. The voltage can be generated based on the output of the aforementioned sensor, monitor, or indicator.

[0053] It should be noted that the above embodiments have been described with reference to different subjects. Specifically, some embodiments may have been described with reference to claims of the method class, while others may have been described with reference to claims of the device class. However, those skilled in the art will understand from the foregoing that, unless otherwise specified, any combination of features relating to different subjects, specifically combinations of features of the method class claims and features of the device class claims, are also considered to be disclosed with this document, except for any combination of features belonging to one type of subject matter.

[0054] Furthermore, it should be noted that the drawings are schematic. Similar or identical elements are represented by the same reference numerals in different drawings. Additionally, it should be noted that, in order to provide a concise description of illustrative embodiments, implementation details that are customary to those skilled in the art may not be described. It should be understood that in the development of any such implementation, as in any engineering or design project, numerous implementation-specific decisions must be made to achieve the developer's specific objectives, such as complying with system-related and business-related constraints, which may differ in different implementations. Furthermore, it should be understood that such development work can be complex and time-consuming, but is merely a routine task for those skilled in the art in designing, manufacturing, and producing.

[0055] Finally, it should be noted that those skilled in the art will be able to devise numerous alternative embodiments without departing from the scope of the appended claims. Any reference numerals placed between parentheses in the claims should not be construed as limiting the claims. The word "comprise / comprising" does not exclude the presence of elements or steps other than those listed in the claims. The indefinite article "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The measures recited in the claims can be implemented by means of hardware comprising several different elements and / or by means of a suitably programmed processor. In a device claim listing several components, several of these components can be embodied by the same object in the hardware. The mere fact that certain measures are recited in different appendix claims does not indicate that combinations of these measures cannot be advantageously used.

[0056] List of reference numerals

[0057] 100 charge pump

[0058] 102 diode

[0059] 104 diode

[0060] 106 diode

[0061] 108 diode

[0062] 110 capacitor

[0063] 112 Capacitor

[0064] 114 Capacitors

[0065] 116 capacitor

[0066] 118 inverter

[0067] 200 RFID transponders

[0068] 202 Charge Pump

[0069] 204 Functional Components

[0070] 300 Methods for operating RFID transponders

[0071] 302 An input voltage is converted into an output voltage by a charge pump of an RFID transponder, wherein the charge pump includes at least one capacitor with reverse impedance characteristics to compensate for impedance variations of the charge pump's diode.

[0072] 304 At least one functional component of an RFID transponder whose output voltage is supplied by a charge pump.

[0073] 306 The RFID transponder function is performed by the functional component using the output voltage of the charge pump.

[0074] 400 charge pump assembly

[0075] 402 diode

[0076] 404 capacitors with reverse impedance characteristics

[0077] The relationship between the input voltage and output current of a 406 diode.

[0078] 408 The relationship between the capacitance of a capacitor and the input voltage

[0079] 500 charge pump assembly

[0080] 502 diode

[0081] 504 capacitor

[0082] 506 capacitor

[0083] 508 capacitor

[0084] 510 capacitor

[0085] 512 capacitor

[0086] 514 Relationship between input voltage and output current of a diode

[0087] 516 The relationship between the capacitance of the corresponding capacitor and the input voltage

[0088] 600 charge pump assembly

[0089] 602 diode

[0090] 604 capacitor

[0091] 606 capacitor

[0092] 608 capacitor

[0093] 610 capacitor

[0094] 612 capacitor

[0095] 614 Relationship between input voltage and output current of a diode

[0096] 616 Relationship between the capacitance of the corresponding capacitor and the input voltage

[0097] 700 charge pump assembly

[0098] 702 diode

[0099] 704 capacitor

[0100] 706 varactor diode

[0101] The relationship between the input voltage and output current of a 708 diode.

[0102] 710 The relationship between the capacitance of a capacitor and the input voltage.

Claims

1. A radio frequency identification (RFID) transponder comprising a charge pump and at least one functional component, characterized in that: The charge pump is configured to convert an input voltage into an output voltage and supply the output voltage to the functional component; The functional component is configured to use the output voltage of the charge pump to perform the function of the RFID transponder; The charge pump comprises multiple stages, each stage including a diode or switching transistor and multiple capacitors coupled to the diode or switching transistor, wherein the multiple capacitors are configured to compensate for impedance variations of the diode or switching transistor. The plurality of capacitors have different types, values, and / or geometries, and the plurality of capacitors collectively provide a reverse impedance characteristic relative to the impedance of the diode, and one or more of the plurality of capacitors may be selectively added or removed to change the impedance of the plurality of capacitors. The RFID transponder further includes a charge pump controller configured to connect and disconnect a corresponding capacitor from the diode or switching transistor. Furthermore, the charge pump controller is additionally configured to connect and disconnect at least one of the capacitors from the clock input line of the charge pump.

2. The RFID transponder according to claim 1, characterized in that, Additionally, it includes at least one sensor configured to sense environmental parameters, manufacturing parameters, and / or functional parameters of the RFID transponder.

3. The RFID transponder according to claim 1, characterized in that, The plurality of capacitors are configured to compensate for the impedance changes of the diode or switching transistor by having capacitance, the capacitance increasing or decreasing in response to the input voltage at the same rate as the resistance of the diode or switching transistor decreases or increases accordingly.

4. A method for operating an RFID transponder, characterized in that, The method includes: The input voltage is converted into an output voltage by a charge pump of the RFID transponder, wherein the charge pump includes multiple stages, each stage including a diode or switching transistor and multiple capacitors coupled to the diode or switching transistor, and wherein the multiple capacitors compensate for changes in the impedance of the diode or switching transistor; The output voltage is supplied to at least one functional component of the RFID transponder by the charge pump; The RFID transponder function is performed by the functional components using the output voltage of the charge pump. The plurality of capacitors have different types, values, and / or geometries, and the plurality of capacitors collectively provide a reverse impedance characteristic relative to the impedance of the diode, and one or more of the plurality of capacitors may be selectively added or removed to change the impedance of the plurality of capacitors. The method further includes a charge pump controller included in the RFID transponder connecting and disconnecting a corresponding capacitor from the diode or switching transistor. Furthermore, the method further includes the charge pump controller connecting and disconnecting at least one of the capacitors from the clock input line of the charge pump.

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