A micro semiconductor light emitting device and a method for manufacturing the same

Abstract

The present application relates to the field of semiconductor technology, and in particular to a micro-semiconductor light-emitting device and a method for manufacturing the same. The micro-semiconductor light-emitting device comprises: a transfer substrate; a first functional layer, comprising a first sub-section, a second sub-section and a third sub-section connected in sequence; a second functional layer, comprising a fourth sub-section, a fifth sub-section and a sixth sub-section connected in sequence; a light-emitting diode; wherein the first sub-section and the fourth sub-section constitute a support section, and the two are sequentially stacked on one side of the transfer substrate; the second sub-section and the fifth sub-section constitute a suspended thin-walled section, and the two are sequentially stacked and have no contact with the transfer substrate; the third sub-section, the sixth sub-section and the light-emitting diode constitute a suspended light-emitting section and have no contact with the transfer substrate; wherein the top height of the support section is less than or equal to the bottom height of the suspended light-emitting section, and the top height of the suspended thin-walled section is less than or equal to the bottom height of the suspended light-emitting section. By the above method, the success rate of the transfer of the suspended light-emitting section can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a micro semiconductor light emitting device and a method for manufacturing the same. Background Art

[0002] Micro-LED (micro light emitting diode) is a new generation of display technology, which is brighter, more efficient and consumes less power than the existing OLED technology. The display principle of Micro-LED is to design the LED structure into thin film, miniaturization and array, and its size is only about 1μm to 100μm. Micro-LED is transferred to the circuit substrate in batches; the protective layer and the upper electrode are completed by physical deposition process, and the upper substrate can be packaged to complete a simple Micro-LED display.

[0003] At present, the transfer efficiency and transfer accuracy of Micro-LED are relatively low, resulting in a long production cycle and low yield of the final Micro-LED display panel. Summary of the invention

[0004] The main technical problem solved by the present application is to provide a micro semiconductor light emitting device and a manufacturing method thereof, which can improve the transfer yield of the micro semiconductor light emitting device.

[0005] To solve the above technical problems, a technical solution adopted in the present application is: a method for manufacturing a micro-semiconductor light-emitting device, comprising: growing a light-emitting epitaxial structure on a growth substrate; forming a first functional layer, wherein the first functional layer at least covers a side of the light-emitting epitaxial structure away from the growth substrate; forming a transfer substrate on a side of the first functional layer away from the light-emitting epitaxial structure, wherein a sacrificial layer is partially formed between the transfer substrate and the first functional layer; removing the growth substrate and exposing one side of the light-emitting epitaxial structure; forming a second functional layer, wherein the second functional layer at least covers a side of the light-emitting epitaxial structure away from the transfer substrate; removing the sacrificial layer so that the light-emitting epitaxial structure, the first functional layer covering the light-emitting epitaxial structure, and the second functional layer covering the light-emitting epitaxial structure are not in contact with the transfer substrate.

[0006] In order to solve the above technical problems, a technical solution adopted in the present application is: a micro-semiconductor light-emitting device, comprising: a transfer substrate; a first functional layer, comprising a first sub-section, a second sub-section and a third sub-section connected in sequence; a second functional layer, comprising a fourth sub-section, a fifth sub-section and a sixth sub-section connected in sequence; a light-emitting diode; wherein the first sub-section and the fourth sub-section constitute a supporting section, and the two are stacked in sequence on one side of the transfer substrate; the second sub-section and the fifth sub-section constitute a suspended thin-walled section, and the two are stacked in sequence and have no contact with the transfer substrate; the third sub-section, the sixth sub-section and the light-emitting diode constitute a suspended light-emitting section and have no contact with the transfer substrate; wherein the top height of the supporting section is less than or equal to the bottom height of the suspended light-emitting section, and the top height of the suspended thin-walled section is less than or equal to the bottom height of the suspended light-emitting section.

[0007] Different from the prior art, this application has the following beneficial effects:

[0008] (1) Compared with the solution of secondary substrate transfer and peeling, the present application simplifies the manufacturing process and saves manufacturing costs;

[0009] (2) Compared with the solution of manufacturing a common electrode interconnected with a COMS substrate, the present application provides a highly flexible transferable micro semiconductor light-emitting device. After the first functional layer is bonded to the transfer substrate, the first conductive type electrode and the second conductive type electrode can still be flexibly transferred;

[0010] (3) The top height of the support portion of the present application is less than or equal to the bottom height of the suspended light-emitting portion, that is, the suspended light-emitting portion is placed outside the support portion / transfer substrate. During transfer, the contact surface between the flexible substrate and the suspended light-emitting portion is larger, and the flexible substrate does not contact the transfer substrate, thereby improving the success rate of transferring the suspended light-emitting portion.

[0011] (4) The edge area of ​​the electrode is protected by the functional layer, which can avoid corrosion of the electrode when removing the sacrificial layer, thereby improving the photoelectric performance and reliability of the micro-semiconductor light-emitting device;

[0012] (5) The functional layer is provided with a groove to expose part of the electrode, and the thickness of the conductive type electrode is less than or equal to the thickness of the functional layer, thereby ensuring the flatness of the functional layer and improving the success rate of subsequent bonding / adhesion of the functional layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:

[0014] Figure 1This is a schematic structural diagram of the first embodiment of the micro semiconductor light emitting device of the present application;

[0015] Figure 2 This is a schematic structural diagram of a second embodiment of a micro semiconductor light emitting device of the present application;

[0016] Figure 3 This is a schematic structural diagram of the third embodiment of the micro semiconductor light emitting device of the present application;

[0017] Figure 4 for Figure 1 A schematic diagram of a process for manufacturing a micro semiconductor light emitting device is shown;

[0018] Figure 5 for Figure 2 A schematic diagram of a process for manufacturing a micro semiconductor light emitting device is shown;

[0019] Figure 6 for Figure 3 A schematic diagram of a process for manufacturing a micro semiconductor light emitting device is shown; DETAILED DESCRIPTION

[0020] Several specific embodiments of the present application will be further described in detail below in conjunction with the accompanying drawings. However, the following description and explanation of the embodiments do not constitute any limitation on the protection scope of the present application.

[0021] It should be understood that the terms used in this application are only for the purpose of describing specific embodiments, and are not intended to limit this application. It is further understood that when the terms "comprising" and "including" are used in this application, they are used to indicate the existence of stated features, integral bodies, steps, components, and / or packages, and do not exclude the existence of one or more other features, integral bodies, steps, components, packages, and / or their combinations, and / or additions, and / or deletions.

[0022] Unless otherwise defined, all terms (including technical terms and scientific terms) used in this application have the same meaning as those commonly understood by those of ordinary skill in the art to which this application belongs. It should be further understood that the terms used in this application should be understood to have the same meaning as the meaning of these terms in the context of this specification and the relevant field, and should not be understood in an idealized or overly formal sense, unless explicitly defined in this application.

[0023] During long-term research, the inventors of the present application discovered that in existing upright Micro-LED chips or flip-chip Micro-LED chips, the GaN-based bridge structure is difficult to break, and the break easily extends to the inside of the Micro-LED chip, resulting in a low transfer yield.

[0024] In order to solve the technical problems existing in the prior art, the present application proposes a micro semiconductor light-emitting device 10, the light waves of which can be UVC, UVB, UVA, purple light, blue light, green light, yellow light, red light and infrared light, etc.

[0025] In one embodiment, the present application provides a front-mounted micro semiconductor light emitting device 10, the structure of which is as follows: Figure 1 As shown, the upright type micro semiconductor light emitting device 10 comprises: a transfer substrate 11, a first functional layer 12, a second functional layer 13 and a light emitting diode 14. The light emitting diode 14 is a vertical type Micro-LED.

[0026] The first functional layer 12 includes a first sub-portion 121 , a second sub-portion 122 , and a third sub-portion 123 which are sequentially connected.

[0027] The second functional layer 13 includes a fourth sub-portion 131 , a fifth sub-portion 132 , and a sixth sub-portion 133 which are sequentially connected.

[0028] The first sub-section 121 and the fourth sub-section 131 constitute a supporting section, which are stacked in sequence on one side of the transfer substrate 11. The second sub-section 122 and the fifth sub-section 132 constitute a suspended thin-walled section, which are stacked in sequence and have no contact with the transfer substrate 11. The third sub-section 123, the sixth sub-section 133 and the light-emitting diode 14 constitute a suspended light-emitting section 17 and have no contact with the transfer substrate 11.

[0029] The top height of the supporting portion is less than or equal to the bottom height of the suspended light-emitting portion 17 , and the top height of the suspended thin-walled portion is less than or equal to the bottom height of the suspended light-emitting portion 17 .

[0030] The light emitting diode 14 includes a first conductive type electrode 141 , an epitaxial layer 142 and a second conductive type electrode 142 . The epitaxial layer 142 includes a first semiconductor layer 1421 , an active layer 1422 and a second semiconductor layer 1423 which are stacked.

[0031] The first conductive type electrode 141 is disposed on a side of the first semiconductor layer 1421 away from the active layer 1422 , wherein a mesa structure is formed on a side of the first semiconductor layer 1421 facing the first conductive type electrode 141 , and a portion of the first semiconductor layer 1421 is exposed.

[0032] The second conductive type electrode 142 is disposed on a side of the second semiconductor layer 1423 away from the active layer 1422 , wherein a mesa structure is formed on a side of the second semiconductor layer 1423 facing the second conductive type electrode 142 , and a portion of the second semiconductor layer 1423 is exposed.

[0033] The third sub-portion 123 covers the side of the second semiconductor layer 1423 facing away from the active layer 1422 and the side of the second conductive type electrode 142 facing away from the second semiconductor layer 1423. The sixth sub-portion 133 covers the side of the first functional layer 12 facing away from the transfer substrate 11, the sidewall of the epitaxial layer 142, the side of the epitaxial layer 142 facing away from the transfer substrate 11, the edge region of the first conductive type electrode 141, and the edge region of the second conductive type electrode 142. The sixth sub-portion 133 is provided with a first groove for exposing a portion of the first conductive type electrode 141 and a second groove for exposing a portion of the second conductive type electrode 142.

[0034] like Figure 4 As shown, Figure 1 The manufacturing method of the micro semiconductor light emitting device 10 shown includes the following steps:

[0035] S101: providing a growth substrate.

[0036] Specifically, the material of the growth substrate includes, but is not limited to, sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide or metal, and its surface structure may be a planar structure or a patterned structure.

[0037] S102: growing a buffer layer on a growth substrate.

[0038] In this step, the buffer layer may be grown on one main surface of the growth substrate by a conventional MOCVD process or by means of a process such as physical vapor deposition, sputtering, hydrogen vapor deposition or atomic layer deposition.

[0039] The buffer layer may be used to promote single crystal growth of the first semiconductor layer 1421 .

[0040] The buffer layer can also be used as a stripping sacrificial layer, and the stripping between the buffer layer and the growth substrate can be easily achieved by wet etching, dry etching or laser stripping.

[0041] S103: forming a light-emitting epitaxial structure on a side of the buffer layer away from the growth substrate.

[0042] Specifically, the light-emitting epitaxial structure includes an epitaxial layer 142 and a second conductive type electrode 142, the epitaxial layer 142 includes a first semiconductor layer 1421, an active layer 1422 and a second semiconductor layer 1423 which are stacked, and the second conductive type electrode 142 is arranged on the side of the second semiconductor layer 1423 away from the active layer 1422, wherein a mesa structure is formed on the side of the second semiconductor layer 1423 facing the second conductive type electrode 142, and a portion of the second semiconductor layer 1423 is exposed.

[0043] In this step, the first semiconductor layer 1421, the active layer 1422 and the second semiconductor layer 1423 can be grown in sequence by epitaxial growth on the side of the buffer layer away from the growth substrate by Metal-organic Chemical Vapor Deposition (MOCVD) or Molecular beam epitaxy (MBE).

[0044] The second conductive type electrode 142143 can be manufactured by metal sputtering (Sputter), plasma enhanced chemical vapor deposition (PECVD), electron beam evaporation (e-beam) and other methods known in the art, but is not limited thereto.

[0045] The second conductive type electrode 142143 is patterned, and the patterning includes patterning the second conductive type electrode 142143 from a side of the second conductive type electrode 142143 away from the second semiconductor layer 1423 to form a plurality of mesa structures. The second conductive type electrode 142143 can be etched by a mask and etching process to form a mesa structure.

[0046] In this step, the mask may be used as an etching barrier to control the etching depth, thereby exposing the second semiconductor layer 1423 at the periphery of the mesa structure. The etching process may include dry etching, wet etching or a combination thereof.

[0047] S104 : forming a first functional layer 12 covering a side of the second semiconductor layer 1423 facing away from the active layer 1422 and a side of the second conductive type electrode 142 facing away from the second semiconductor layer 1423 .

[0048] S105 : forming a transfer substrate 11 on a side of the first functional layer 12 facing away from the epitaxial layer 142 , wherein a sacrificial layer is partially formed between the transfer substrate 11 and the first functional layer 12 .

[0049] In this step, a sacrificial layer is firstly formed locally on the side of the first functional layer 12 away from the epitaxial layer 142 , and then a transfer substrate 11 is formed on the side of the first functional layer 12 away from the epitaxial layer 142 and on the side of the sacrificial layer away from the first functional layer 12 .

[0050] Optionally, the transfer substrate 11 and the first functional layer 12 may be connected by adhesion or bonding.

[0051] S106 : using the buffer layer as a stripping sacrificial layer, removing the buffer layer, so as to strip the growth substrate from the contact surface between the buffer layer and the growth substrate, and exposing a side of the first semiconductor layer 1421 away from the active layer 1422 .

[0052] In this step, the buffer layer may be removed by dry etching, wet etching or a combination thereof, and then the growth substrate is peeled off to expose a side of the first semiconductor layer 1421 away from the active layer 1422 .

[0053] S107 : performing patterning on the epitaxial layer 142 to expose a portion of the first functional layer 12 and the second conductive type electrode 142 .

[0054] In this step, the epitaxial layer 142 can be patterned by dry etching, wet etching or a combination thereof to expose a portion of the first functional layer 12 and the second conductive type electrode 142. It can be understood that each mesa structure obtained by patterning the epitaxial layer 142 in this step can be used as an independent light-emitting diode 14 unit.

[0055] S108 : forming a first conductive type electrode 141 on a side of the first semiconductor layer 1421 away from the active layer 1422 , wherein a mesa structure is formed on a side of the first semiconductor layer 1421 facing the first conductive type electrode 141 , and a portion of the first semiconductor layer 1421 is exposed.

[0056] In this step, the first conductive type electrode 141 can be manufactured by metal sputtering (Sputter), plasma enhanced chemical vapor deposition (PECVD), electron beam evaporation (e-beam) and other methods known in the art, but is not limited thereto.

[0057] The first conductive type electrode 141 is patterned, and the patterning includes patterning the first conductive type electrode 141 from a side of the first conductive type electrode 141 away from the first semiconductor layer 1421 to form a plurality of mesa structures. The first conductive type electrode 141 can be etched by a mask and etching process to form a mesa structure.

[0058] In this step, the mask may be used as an etching barrier to control the etching depth, thereby exposing the first semiconductor layer 1421 at the periphery of the mesa structure. The etching process may include dry etching, wet etching or a combination thereof.

[0059] S109 : forming a second functional layer 13 covering the side of the first functional layer 12 away from the transfer substrate 11 , the sidewall of the epitaxial layer 142 , the side of the epitaxial layer 142 away from the transfer substrate 11 , the edge region of the first conductive type electrode 141 , and the edge region of the second conductive type electrode 142 .

[0060] Specifically, the second functional layer 13 is provided with a first groove ① for exposing a portion of the first conductive type electrode 141 and a second groove ② for exposing a portion of the second conductive type electrode 142, which is convenient for subsequent welding or wire welding processes, etc. The shapes of the above-mentioned first groove ① and second groove ② are not limited in the present application, for example, they can be polygonal, circular, elliptical, etc.

[0061] S110 : removing the sacrificial layer, so that the light emitting diode 14 , the first functional layer 12 covering the light emitting diode 14 , and the second functional layer 13 covering the light emitting diode 14 are out of contact with the transfer substrate 11 .

[0062] By the above method, Figure 1 The micro semiconductor light emitting device 10 is shown.

[0063] In one embodiment, the structure of the front-mounted micro-semiconductor light-emitting device 10 of the present application is as follows: Figure 2 As shown, the light emitting diode 14 includes a first conductive type electrode 141 , an epitaxial layer 142 and a second conductive type electrode 142 . The epitaxial layer 142 includes a first semiconductor layer 1421 , an active layer 1422 and a second semiconductor layer 1423 which are stacked.

[0064] The first conductive type electrode 141 is disposed on a side of the first semiconductor layer 1421 away from the active layer 1422 , wherein a mesa structure is formed on a side of the first semiconductor layer 1421 facing the first conductive type electrode 141 , and a portion of the first semiconductor layer 1421 is exposed.

[0065] The second conductive type electrode 142 is disposed on a side of the second semiconductor layer 1423 away from the active layer 1422 , wherein a mesa structure is formed on a side of the second semiconductor layer 1423 facing the second conductive type electrode 142 , and a portion of the second semiconductor layer 1423 is exposed.

[0066] The light-emitting diode 14 also includes: a third conductive type electrode 143, which is arranged on the side of the second conductive type electrode 142 away from the transfer substrate 11, and the third conductive type electrode 143 has the same doping type as the second conductive type electrode 142; wherein a mesa structure is formed on the side of the second conductive type electrode 142 facing the third conductive type electrode 143, and a portion of the second conductive type electrode 142 is exposed.

[0067] The third sub-portion 123 covers a side of the second semiconductor layer 1423 facing away from the active layer 1422 and a side of the second conductive type electrode 142 facing away from the second semiconductor layer 1423 .

[0068] The sixth sub-portion 133 covers the side of the first functional layer 12 away from the transfer substrate 11, the sidewall of the epitaxial layer 142, the side of the epitaxial layer 142 away from the transfer substrate 11, the edge region of the first conductive type electrode 141, the side of the second conductive type electrode 142 away from the transfer substrate 11, and the edge region of the third conductive type electrode 143. The sixth sub-portion 133 is provided with a first groove ① for exposing a portion of the first conductive type electrode 141 and a third groove ③ for exposing a portion of the third conductive type electrode 143.

[0069] like Figure 5 As shown, Figure 2 The manufacturing method of the micro semiconductor light emitting device 10 shown includes the following steps:

[0070] S201: providing a growth substrate.

[0071] Please refer to the aforementioned step S101 for details.

[0072] S202: growing a buffer layer on a growth substrate.

[0073] Please refer to the aforementioned step S102 for details.

[0074] S203: forming a light-emitting epitaxial structure on a side of the buffer layer away from the growth substrate.

[0075] Please refer to the aforementioned step S103 for details.

[0076] S204 : forming a first functional layer 12 covering a side of the second semiconductor layer 1423 facing away from the active layer 1422 and a side of the second conductive type electrode 142 facing away from the second semiconductor layer 1423 .

[0077] Please refer to the aforementioned step S104 for details.

[0078] S205 : forming a transfer substrate 11 on a side of the first functional layer 12 facing away from the epitaxial layer 142 , wherein a sacrificial layer is partially formed between the transfer substrate 11 and the first functional layer 12 .

[0079] Please refer to the aforementioned step S105 for details.

[0080] S206 : using the buffer layer as a stripping sacrificial layer, removing the buffer layer, so as to strip the growth substrate from the contact surface between the buffer layer and the growth substrate, and exposing a side of the first semiconductor layer 1421 away from the active layer 1422 .

[0081] Please refer to the aforementioned step S106 for details.

[0082] S207 : performing patterning on the epitaxial layer 142 to expose a portion of the first functional layer 12 and the second conductive type electrode 142 .

[0083] Please refer to the aforementioned step S107 for details.

[0084] S208 : forming a first conductive type electrode 141 on a side of the first semiconductor layer 1421 away from the active layer 1422 , wherein a mesa structure is formed on a side of the first semiconductor layer 1421 facing the first conductive type electrode 141 , and a portion of the first semiconductor layer 1421 is exposed.

[0085] Please refer to the aforementioned step S108 for details.

[0086] S209: A third conductive type electrode 143 is formed on the side of the second conductive type electrode 143 facing away from the transfer substrate 11, and the third conductive type electrode 144 has the same doping type as the second conductive type electrode 143, wherein a mesa structure is formed on the side of the second conductive type electrode 143 facing the third conductive type electrode 144, and a portion of the second conductive type electrode 143 is exposed.

[0087] In this step, the third conductive type electrode 144 can be manufactured by using methods known in the art such as metal sputtering (Sputter), plasma enhanced chemical vapor deposition (PECVD), electron beam evaporation (e-beam), etc., but is not limited thereto.

[0088] The third conductive type electrode 144 is patterned, and the patterning includes patterning the third conductive type electrode 144 from a side of the third conductive type electrode 144 away from the second conductive type electrode 143 to form a plurality of mesa structures. The third conductive type electrode 144 can be etched by a mask and etching process to form a mesa structure.

[0089] In this step, the mask can be used as an etching barrier to control the etching depth, thereby exposing the second conductive type electrode 143 at the periphery of the mesa structure. The etching process can include dry etching, wet etching or a combination thereof.

[0090] S210: forming a second functional layer 13 covering the side of the first functional layer 12 away from the transfer substrate 11, the sidewall of the epitaxial layer 142, the side of the epitaxial layer 142 away from the transfer substrate 11, the edge region of the first conductive type electrode 141, the side of the second conductive type electrode 143 away from the transfer substrate 11, and the edge region of the third conductive type electrode 144;

[0091] Specifically, the second functional layer 13 is provided with a first groove for exposing part of the first conductive type electrode 141 and a third groove ③ for exposing part of the third conductive type electrode 144, which is convenient for subsequent welding or wire welding processes, etc. The shape of the above-mentioned third groove ③ is not limited in the present application, for example, it can be polygonal, circular, elliptical, etc.

[0092] S211 : removing the sacrificial layer, so that the light emitting diode 14 , the first functional layer 12 covering the light emitting diode 14 , and the second functional layer 13 covering the light emitting diode 14 are out of contact with the transfer substrate 11 .

[0093] By the above method, Figure 2 The micro semiconductor light emitting device 10 is shown.

[0094] In one embodiment, the structure of the flip-chip micro semiconductor light emitting device 10 of the present application is as follows: Figure 3 As shown, the flip-chip micro semiconductor light-emitting device 10 includes: a transfer substrate 11, a first functional layer 12, a second functional layer 13 and a light-emitting diode 14. The light-emitting diode 14 is a vertical Micro-LED.

[0095] The first functional layer 12 includes a first sub-portion 121 , a second sub-portion 122 , and a third sub-portion 123 which are sequentially connected.

[0096] The second functional layer 13 includes a fourth sub-portion 131 , a fifth sub-portion 132 , and a sixth sub-portion 133 which are sequentially connected.

[0097] The first sub-section 121 and the fourth sub-section 131 constitute a supporting section, which are stacked in sequence on one side of the transfer substrate 11. The second sub-section 122 and the fifth sub-section 132 constitute a suspended thin-walled section, which are stacked in sequence and have no contact with the transfer substrate 11. The third sub-section 123, the sixth sub-section 133 and the light-emitting diode 14 constitute a suspended light-emitting section 17 and have no contact with the transfer substrate 11.

[0098] The top height of the supporting portion is less than or equal to the bottom height of the suspended light-emitting portion 17 , and the top height of the suspended thin-walled portion is less than or equal to the bottom height of the suspended light-emitting portion 17 .

[0099] The light emitting diode 14 includes a first conductive type electrode 141 , an epitaxial layer 142 , and a second conductive type electrode 143 . The epitaxial layer 142 includes a first semiconductor layer 1421 , an active layer 1422 , and a second semiconductor layer 1423 which are stacked.

[0100] A mesa structure is formed on the side of the first semiconductor layer 1421 facing the second semiconductor layer 1423 and a portion of the first semiconductor layer 1421 is exposed. The first conductive type electrode 141 is arranged on the exposed side of the first semiconductor layer 1421 , and the second conductive type electrode 143 is arranged on the side of the second semiconductor layer 1423 away from the active layer 1422 .

[0101] The third sub-portion 123 covers the side of the epitaxial layer 142 facing the transfer substrate 11, a side wall of the epitaxial layer 142, an edge area of ​​the first conductive type electrode 141 and an edge area of ​​the second conductive type electrode 143, wherein the third sub-portion 123 is provided with a fourth groove for exposing a portion of the first conductive type electrode 141 and a fifth groove for exposing a portion of the second conductive type electrode 143.

[0102] The sixth sub-portion 133 covers a side of the epitaxial layer 142 facing away from the transfer substrate 11 and the other sidewall of the epitaxial layer 142 .

[0103] like Figure 6 As shown, Figure 3 The manufacturing method of the micro semiconductor light emitting device 10 shown includes the following steps:

[0104] S301: providing a growth substrate.

[0105] Specifically, the material of the growth substrate includes, but is not limited to, sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide or metal, and its surface structure may be a planar structure or a patterned structure.

[0106] S302: growing a buffer layer on a growth substrate.

[0107] Please refer to the aforementioned step S102 for details.

[0108] S303: forming a light-emitting epitaxial structure on a side of the buffer layer away from the growth substrate.

[0109] Specifically, the light-emitting epitaxial structure includes an epitaxial layer 142, a first conductive type electrode 141 and a second conductive type electrode 143, the epitaxial layer 142 includes a first semiconductor layer 1421, an active layer 1422 and a second semiconductor layer 1423 which are stacked, wherein a mesa structure is formed on the side of the first semiconductor layer 1421 facing the second semiconductor layer 1423, and a portion of the first semiconductor layer 1421 is exposed, the first conductive type electrode 141 is arranged on the side of the first semiconductor layer 1421 away from the growth substrate, and the second conductive type electrode 143 is arranged on the side of the second semiconductor layer 1423 away from the active layer 1422.

[0110] In this step, the first semiconductor layer 1421, the active layer 1422 and the second semiconductor layer 1423 can be grown in sequence by epitaxial growth on the side of the buffer layer away from the growth substrate by Metal-organic Chemical Vapor Deposition (MOCVD) or Molecular beam epitaxy (MBE).

[0111] The second conductive type electrode 143143 can be manufactured by metal sputtering (Sputter), plasma enhanced chemical vapor deposition (PECVD), electron beam evaporation (e-beam) and other methods known in the art, but is not limited thereto.

[0112] The first semiconductor layer 1421 is patterned, and the patterning includes patterning the second semiconductor layer 1423 from a side of the second semiconductor layer 1423 away from the first semiconductor layer 1421 to form a plurality of mesa structures. The second semiconductor layer 1423 may be etched by a mask and etching process to form the mesa structure.

[0113] In this step, the mask may be used as an etching barrier to control the etching depth, thereby exposing the first semiconductor layer 1421 at the periphery of the mesa structure. The etching process may include dry etching, wet etching or a combination thereof.

[0114] S304 : forming a first functional layer 12 covering the side of the epitaxial layer 142 facing away from the growth substrate, the sidewall of the epitaxial layer 142 , the edge region of the first conductive type electrode 141 , and the edge region of the second conductive type electrode 143 .

[0115] Specifically, the first functional layer 12 is provided with a fourth groove ④ for exposing part of the first conductive type electrode 141 and a fifth groove ⑤ for exposing part of the second conductive type electrode 143, which are convenient for subsequent welding or wire welding processes, etc. The shapes of the fourth groove ④ and the fifth groove ⑤ are not limited in the present application, for example, they can be polygonal, circular, elliptical, etc.

[0116] S305 : forming a transfer substrate 11 on a side of the first functional layer 12 facing away from the epitaxial layer 142 , wherein a sacrificial layer is partially formed between the transfer substrate 11 and the first functional layer 12 .

[0117] In this step, a sacrificial layer is firstly formed locally on the side of the first functional layer 12 away from the epitaxial layer 142 , and then a transfer substrate 11 is formed on the side of the first functional layer 12 away from the epitaxial layer 142 and on the side of the sacrificial layer away from the first functional layer 12 .

[0118] Optionally, the transfer substrate 11 and the first functional layer 12 may be connected by adhesion or bonding.

[0119] S306 : using the buffer layer as a stripping sacrificial layer, removing the buffer layer, so as to strip the growth substrate from the contact surface between the buffer layer and the growth substrate, and exposing a side of the first semiconductor layer 1421 away from the active layer 1422 .

[0120] In this step, the buffer layer may be removed by dry etching, wet etching or a combination thereof, and then the growth substrate is peeled off to expose a side of the first semiconductor layer 1421 away from the active layer 1422 .

[0121] S307 : performing patterning on the epitaxial layer 142 to expose a portion of the first functional layer 12 .

[0122] S308 : forming a second functional layer 13 covering the side of the first functional layer 12 facing away from the transfer substrate 11 , the sidewall of the epitaxial layer 142 , and the side of the epitaxial layer 142 facing away from the transfer substrate 11 .

[0123] S309 : removing the sacrificial layer, so that the light emitting diode 14 , the first functional layer 12 covering the light emitting diode 14 , and the second functional layer 13 covering the light emitting diode 14 are out of contact with the transfer substrate 11 .

[0124] By the above method, Figure 3 The micro semiconductor light emitting device 10 is shown.

[0125] In some embodiments, the thickness of the first conductive type electrode 141 and the second conductive type electrode 143 143 is less than or equal to the thickness of the third sub-portion 123 .

[0126] In some embodiments, the thickness of the first conductive type electrode 141 and the second conductive type electrode 143 143 is less than or equal to the thickness of the sixth sub-portion 133 .

[0127] In some embodiments, the suspended thin-walled portion is used as a cutting portion to separate the supporting portion and the suspended light-emitting portion 17 so as to transfer the suspended light-emitting portion 17 to a flexible substrate, wherein the sixth sub-portion 133 in the suspended light-emitting portion 17 can be adhered or bonded to the flexible substrate.

[0128] In some embodiments, a breaking groove is provided on the suspended thin-walled portion.

[0129] In some embodiments, the thickness of the suspended thin-walled portion is 0.1 μm to 10 μm, and the width of the suspended light-emitting portion 17 is 1 μm to 200 μm.

[0130] In some embodiments, the material of the first functional layer 12 and / or the second functional layer 13 includes at least one of metal, metal alloy, insulating material, curable resin, and semiconductor material. The first functional layer 12 and the second functional layer 13 can be manufactured by coating, bonding, bonding, metal sputtering, plasma enhanced chemical vapor deposition (PECVD), electron beam evaporation (e-beam), etc., which are known in the art, but are not limited thereto.

[0131] In some embodiments, the material of the transfer substrate 11 includes, but is not limited to, sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide or metal, and its surface structure may be a planar structure or a patterned structure.

[0132] In some embodiments, when the first semiconductor layer 1421 is a P-type semiconductor layer, the second semiconductor layer 1423 may be an N-type semiconductor layer with different electrical properties. Conversely, when the first semiconductor layer 1421 is an N-type semiconductor layer, the second semiconductor layer 1423 may be a P-type semiconductor layer with different electrical properties. The active layer 1422 may be a semiconductor with neutral, P-type or N-type electrical properties. When current is applied through the light-emitting diode 14, the active layer 1422 is excited to emit light.

[0133] In some embodiments, the first semiconductor layer 1421 can be an N-type semiconductor layer, whose main function is to provide electrons for composite luminescence. Specifically, it can be a semiconductor doped with at least one of Si, Ge and Sn (such as GaN, AlGaN, InGaN, AlN, GaAs, etc.).

[0134] In some embodiments, the active layer 1422 is an electron-hole recombination region and may have a structure of a single heterojunction, a double heterojunction, a single quantum junction, or a multi-quantum junction.

[0135] In some embodiments, the second semiconductor layer 1423 is a P-type semiconductor layer, whose main function is to provide holes for compound luminescence. Specifically, it can be a semiconductor doped with at least one of Mg, Zn, Be, Ca, Sr and Ba (for example, GaN, AlGaN, InGaN, AlN, GaAs, etc.).

[0136] In some embodiments, the first semiconductor layer 1421 and the second semiconductor layer 1423 may be intrinsic semiconductor layers. The first semiconductor layer 1421 and the second semiconductor layer 1423 may provide electrons or holes and may also serve as current diffusion layers.

[0137] In some embodiments, the first conductive type electrode 141 and the second conductive type electrode 143143 can be formed by various materials with good conductive properties known in the art, such as ITO, Au, Ti, Al, Ag, Cu, Ni, Cr, etc. or their alloys, and are not limited thereto. In addition, the first conductive type electrode 141 and the second conductive type electrode 143143 can be manufactured by metal sputtering (Sputter), plasma enhanced chemical vapor deposition (PECVD), electron beam evaporation (e-beam) and other methods known in the art, and are not limited thereto.

[0138] In some embodiments, the light emitting diode 14 includes a first semiconductor reflective layer disposed between the first conductive type electrode 141 and the first semiconductor layer 1421 , and a second semiconductor reflective layer disposed between the second conductive type electrode 143 and the second semiconductor layer 1423 .

[0139] Specifically, the first semiconductor reflective layer forms a good P-type ohmic contact with the first semiconductor layer 1421 , and the second semiconductor reflective layer forms a good N-type ohmic contact with the second semiconductor layer 1423 .

[0140] The materials of the first semiconductor reflective layer and the second semiconductor reflective layer may be metal materials or mixtures or compounds doped with metal materials, and may be transparent materials or opaque materials. For example, the first semiconductor reflective layer and the second semiconductor reflective layer may be transparent conductive oxide (TCO) layers, such as indium tin oxide (ITO) layers and zinc oxide (ZnO) layers, or may be single layers or stacked layers consisting of any one of nickel (Ni), chromium (Cr), titanium (Ti), aluminum (Al), silver (Ag), platinum (Pt), gold (Au), tin (Sn), and indium (In), or alloys of any two or more thereof.

[0141] The first semiconductor reflective layer and the second semiconductor reflective layer can be formed by metal sputtering (Sputter), plasma enhanced chemical vapor deposition (PECVD), electron beam evaporation (e-beam) and other methods known in the art, but are not limited thereto.

[0142] In some embodiments, the light emitting diode 14 includes a first transparent current spreading layer disposed between the first conductive type electrode 141 and the first semiconductor layer 1421 , and a second transparent current spreading layer disposed between the second conductive type electrode 143 and the second semiconductor layer 1423 .

[0143] Specifically, the main purpose of the first transparent current diffusion layer is to improve the uniformity of current diffusion of the first semiconductor layer 1421, and a transparent material (such as ITO) with a conductivity greater than that of the first semiconductor layer 1421 can be used. The main purpose of the second transparent current diffusion layer is to improve the uniformity of current diffusion of the second semiconductor layer 1423, and a transparent material (such as ITO) with a conductivity greater than that of the second semiconductor layer 1423 can be used.

[0144] The first transparent current spreading layer and the second transparent current spreading layer can be formed by metal sputtering (Sputter), plasma enhanced chemical vapor deposition (PECVD), electron beam evaporation (e-beam) and other methods known in the art, but are not limited thereto.

[0145] In some embodiments, the light emitting diode 14 includes a first conductive type electrode 141 , a conductive substrate, a first semiconductor layer 1421 , an active layer 1422 , a second semiconductor layer 1423 , a transparent current diffusion layer, and a second conductive type electrode 143143 , which are sequentially stacked.

[0146] In some embodiments, the material of the transfer substrate 11 may be at least one of sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide, or metal.

[0147] In some embodiments, the material of the sacrificial layer can be at least one of a semiconductor material, an insulating dielectric material, a metal material, and a specific organic soluble material. The semiconductor material can be Si <111> , amorphous Si, etc. The insulating dielectric material can be SiO2, Si x N y The metal may be Ti, Al, Cu, etc. The specific organic soluble material may be a curable resin, photosensitive SU8, etc.

[0148] Different from the prior art, this application has the following beneficial effects:

[0149] (1) Compared with the solution of secondary substrate transfer and peeling, the present application simplifies the manufacturing process and saves manufacturing costs;

[0150] (2) Compared with the solution of manufacturing a common electrode interconnected with a COMS substrate, the present application provides a highly flexible transferable micro semiconductor light-emitting device. After the first functional layer is bonded to the transfer substrate, the first conductive type electrode and the second conductive type electrode can still be flexibly transferred;

[0151] (3) The top height of the support portion of the present application is less than or equal to the bottom height of the suspended light-emitting portion, that is, the suspended light-emitting portion is placed outside the support portion / transfer substrate. During transfer, the contact surface between the flexible substrate and the suspended light-emitting portion is larger, and the flexible substrate does not contact the transfer substrate, thereby improving the success rate of transferring the suspended light-emitting portion.

[0152] (4) The edge area of ​​the electrode is protected by the functional layer, which can avoid corrosion of the electrode when removing the sacrificial layer, thereby improving the photoelectric performance and reliability of the micro-semiconductor light-emitting device;

[0153] (5) The functional layer is provided with a groove to expose part of the electrode, and the thickness of the conductive type electrode is less than or equal to the thickness of the functional layer, thereby ensuring the flatness of the functional layer and improving the success rate of subsequent bonding / adhesion of the functional layer.

[0154] The above are only implementation methods of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for manufacturing a micro semiconductor light emitting device, characterized in that: include: growing a light-emitting epitaxial structure on a growth substrate; forming a first functional layer, wherein the first functional layer at least covers a side of the light-emitting epitaxial structure away from the growth substrate; forming a transfer substrate on a side of the first functional layer away from the light-emitting epitaxial structure, wherein a sacrificial layer is partially formed between the transfer substrate and the first functional layer; removing the growth substrate to expose one side of the light-emitting epitaxial structure; forming a second functional layer, wherein the second functional layer at least covers a side of the light-emitting epitaxial structure away from the transfer substrate; The sacrificial layer is removed so that the light-emitting epitaxial structure, the first functional layer covering the light-emitting epitaxial structure, and the second functional layer covering the light-emitting epitaxial structure are out of contact with the transfer substrate.

2. The method according to claim 1, characterized in that The light-emitting epitaxial structure comprises an epitaxial layer and a second conductive type electrode, the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked, the second conductive type electrode is arranged on a side of the second semiconductor layer away from the active layer, wherein a mesa structure is formed on a side of the second semiconductor layer facing the second conductive type electrode, and a portion of the second semiconductor layer is exposed; The step of forming the first functional layer includes forming the first functional layer covering a side of the second semiconductor layer facing away from the active layer and a side of the second conductive type electrode facing away from the second semiconductor layer.

3. The method according to claim 2, characterized in that After removing the growth substrate, the first semiconductor layer is exposed; Before the step of forming the second functional layer, the method further comprises: Performing patterning on the epitaxial layer to expose a portion of the first functional layer and the second conductive type electrode; A first conductive type electrode is formed on a side of the first semiconductor layer away from the active layer, wherein a mesa structure is formed on a side of the first semiconductor layer facing the first conductive type electrode, and a portion of the first semiconductor layer is exposed.

4. The method according to claim 3, characterized in that The step of forming the second functional layer comprises: forming the second functional layer covering the first functional layer on the side away from the transfer substrate, the sidewall of the epitaxial layer, the side of the epitaxial layer on the side away from the transfer substrate, the edge region of the first conductive type electrode, and the edge region of the second conductive type electrode; The second functional layer is provided with a first groove for exposing a portion of the first conductive type electrode and a second groove for exposing a portion of the second conductive type electrode.

5. The method according to claim 3, characterized in that: Before the step of forming the second functional layer, the method further comprises: forming a third conductive type electrode on a side of the second conductive type electrode away from the transfer substrate, wherein the third conductive type electrode has the same doping type as the second conductive type electrode; A mesa structure is formed on a side of the second conductive type electrode facing the third conductive type electrode, and a portion of the second conductive type electrode is exposed.

6. The method according to claim 5, characterized in that The step of forming the second functional layer comprises: Forming the second functional layer covering the first functional layer on the side facing away from the transfer substrate, the sidewall of the epitaxial layer, the side of the epitaxial layer on the side facing away from the transfer substrate, the edge region of the first conductive type electrode, the side of the second conductive type electrode on the side facing away from the transfer substrate, and the edge region of the third conductive type electrode; The second functional layer is provided with a first groove for exposing a portion of the first conductive type electrode and a third groove for exposing a portion of the third conductive type electrode.

7. The method according to claim 1, characterized in that The light-emitting epitaxial structure comprises an epitaxial layer, a first conductive type electrode and a second conductive type electrode, the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked, wherein a mesa structure is formed on a side of the first semiconductor layer facing the second semiconductor layer, and a portion of the first semiconductor layer is exposed, the first conductive type electrode is arranged on a side of the first semiconductor layer away from the growth substrate, and the second conductive type electrode is arranged on a side of the second semiconductor layer away from the active layer; The step of forming a first functional layer includes: forming the first functional layer covering the side of the epitaxial layer facing away from the growth substrate, the side wall of the epitaxial layer, the edge area of ​​the first conductive type electrode and the edge area of ​​the second conductive type electrode, wherein the first functional layer is provided with a fourth groove for exposing a portion of the first conductive type electrode and a fifth groove for exposing a portion of the second conductive type electrode.

8. The method according to claim 7, characterized in that After removing the growth substrate, the first semiconductor layer is exposed; Before the step of forming the second functional layer, the method further comprises: The epitaxial layer is patterned to expose a portion of the first functional layer.

9. The method according to claim 8, characterized in that The step of forming the second functional layer comprises: The second functional layer is formed to cover the first functional layer on a side facing away from the transfer substrate, the sidewall of the epitaxial layer, and the epitaxial layer on a side facing away from the transfer substrate.

10. The method according to claim 1, characterized in that The step of growing a light-emitting epitaxial structure on a growth substrate comprises: providing a growth substrate; growing a buffer layer on the growth substrate; forming the light-emitting epitaxial structure on a side of the buffer layer away from the growth substrate; The step of removing the growth substrate comprises: The buffer layer is used as a peeling sacrificial layer and is removed to peel off the growth substrate from the contact surface between the buffer layer and the growth substrate.

11. The method according to claim 1, characterized in that: The step of forming a transfer substrate on a side of the first functional layer away from the light-emitting epitaxial structure, wherein a sacrificial layer is partially formed between the transfer substrate and the first functional layer, comprises: Partially forming the sacrificial layer on a side of the first functional layer away from the light-emitting epitaxial structure; The transfer substrate is formed on a side of the first functional layer away from the light-emitting epitaxial structure and on a side of the sacrificial layer away from the first functional layer.

12. The method according to any one of claims 3 or 7, characterized in that: The light-emitting epitaxial structure further comprises: A first semiconductor reflective layer, disposed between the first conductive type electrode and the first semiconductor layer; The second semiconductor reflective layer is disposed between the second conductive type electrode and the second semiconductor layer.

13. The method according to any one of claims 3 or 7, characterized in that: The light-emitting epitaxial structure further comprises: A first transparent current diffusion layer, disposed between the first conductive type electrode and the first semiconductor layer; The second transparent current diffusion layer is disposed between the second conductive type electrode and the second semiconductor layer.

14. The method according to claim 1, characterized in that The material of the first functional layer and / or the second functional layer includes at least one of metal, metal alloy, insulating material, curable resin, and semiconductor material; The material of the sacrificial layer is at least one of a semiconductor material, an insulating dielectric material, a metal material, and a specific organic soluble material, wherein the specific organic soluble material includes a curable resin and a photosensitive SU8; The material of the transfer substrate is at least one of sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide or metal.

15. The method according to claim 10, characterized in that The method of removing the buffer layer includes at least one of wet etching, dry etching, and laser stripping.

16. The method according to claim 1, characterized in that The method further comprises: The light-emitting epitaxial structure, the first functional layer covering the light-emitting epitaxial structure, and the second functional layer covering the light-emitting epitaxial structure are transferred onto a flexible substrate.

17. A micro semiconductor light emitting device, characterized in that: include: transferring a substrate; A first functional layer includes a first sub-section, a second sub-section and a third sub-section connected in sequence; The second functional layer includes a fourth sub-section, a fifth sub-section and a sixth sub-section connected in sequence; Light Emitting Diodes; Wherein, the first sub-section and the fourth sub-section constitute a supporting section, and the two are sequentially stacked and arranged on one side of the transfer substrate; The second sub-section and the fifth sub-section form a suspended thin-walled section, which are stacked in sequence and have no contact with the transfer substrate; The third sub-section, the sixth sub-section and the light-emitting diode constitute a suspended light-emitting section and have no contact with the transfer substrate; The top height of the supporting portion is less than or equal to the bottom height of the suspended light-emitting portion, and the top height of the suspended thin-walled portion is less than or equal to the bottom height of the suspended light-emitting portion.

18. The micro semiconductor light emitting device according to claim 17, characterized in that: The light emitting diode comprises a first conductive type electrode, an epitaxial layer and a second conductive type electrode, wherein the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked; The first conductive type electrode is arranged on a side of the first semiconductor layer away from the active layer, wherein a mesa structure is formed on a side of the first semiconductor layer facing the first conductive type electrode, and a portion of the first semiconductor layer is exposed; The second conductive type electrode is disposed on a side of the second semiconductor layer away from the active layer, wherein a mesa structure is formed on a side of the second semiconductor layer facing the second conductive type electrode, and a portion of the second semiconductor layer is exposed.

19. The micro semiconductor light emitting device according to claim 18, characterized in that: The third sub-portion covers a side of the second semiconductor layer away from the active layer and a side of the second conductive type electrode away from the second semiconductor layer; The sixth sub-portion covers the first functional layer on a side away from the transfer substrate, the sidewall of the epitaxial layer, the side of the epitaxial layer away from the transfer substrate, the edge region of the first conductive type electrode, and the edge region of the second conductive type electrode; The sixth sub-section is provided with a first slot for exposing a portion of the first conductive type electrode and a second slot for exposing a portion of the second conductive type electrode.

20. The micro semiconductor light emitting device according to claim 18, characterized in that: The light emitting diode further comprises: A third conductive type electrode, disposed on a side of the second conductive type electrode away from the transfer substrate, the third conductive type electrode and the second conductive type electrode having the same doping type; A mesa structure is formed on a side of the second conductive type electrode facing the third conductive type electrode, and a portion of the second conductive type electrode is exposed.

21. The micro semiconductor light emitting device according to claim 20, characterized in that: The third sub-portion covers a side of the second semiconductor layer away from the active layer and a side of the second conductive type electrode away from the second semiconductor layer; The sixth sub-portion covers the first functional layer on the side away from the transfer substrate, the sidewall of the epitaxial layer, the side of the epitaxial layer away from the transfer substrate, the edge region of the first conductive type electrode, the side of the second conductive type electrode away from the transfer substrate, and the edge region of the third conductive type electrode; The sixth sub-section is provided with a first slot for exposing a portion of the first conductive type electrode and a third slot for exposing a portion of the third conductive type electrode.

22. The micro semiconductor light emitting device according to claim 17, characterized in that: The light emitting diode comprises a first conductive type electrode, an epitaxial layer and a second conductive type electrode, wherein the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked; A mesa structure is formed on the side of the first semiconductor layer facing the second semiconductor layer, and a portion of the first semiconductor layer is exposed. The first conductive type electrode is arranged on the exposed side of the first semiconductor layer, and the second conductive type electrode is arranged on the side of the second semiconductor layer away from the active layer.

23. The micro semiconductor light emitting device according to claim 22, characterized in that: The third sub-portion covers a side of the epitaxial layer facing the transfer substrate, a side wall of the epitaxial layer, an edge region of the first conductive type electrode, and an edge region of the second conductive type electrode, wherein the third sub-portion is provided with a fourth groove for exposing a portion of the first conductive type electrode and a fifth groove for exposing a portion of the second conductive type electrode; The sixth sub-portion covers a side of the epitaxial layer facing away from the transfer substrate and another sidewall of the epitaxial layer.

24. The micro semiconductor light emitting device according to claim 20 or 21, characterized in that: The thickness of the first conductive type electrode and the third conductive type electrode are both less than or equal to the thickness of the sixth sub-portion.

25. The micro semiconductor light emitting device according to claim 23, characterized in that: The thickness of the first conductive type electrode and the second conductive type electrode are both less than or equal to the thickness of the third sub-portion.

26. The micro semiconductor light emitting device according to claim 17, characterized in that: The suspended thin-walled portion is used as a cutting portion to separate the support portion and the suspended light-emitting portion, so as to transfer the suspended light-emitting portion to a flexible substrate.

27. The micro semiconductor light emitting device according to claim 26, characterized in that: The suspended thin-walled portion is provided with a breaking groove.

28. The micro semiconductor light emitting device according to claim 17, characterized in that: The thickness of the suspended thin-walled portion is 0.1 μm to 10 μm, and the width of the suspended light-emitting portion is 1 μm to 200 μm.

29. The micro semiconductor light emitting device according to claim 17, characterized in that: The material of the first functional layer and / or the second functional layer includes at least one of metal, metal alloy, insulating material, curable resin and semiconductor material.

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