Light emitting element package and its application

Abstract

The light emitting element package includes: a printed circuit board having a front side and a back side; at least one light emitting element disposed on the front side and emitting light in the direction toward which the front side faces; and a molding layer disposed on the printed circuit board and surrounding the light emitting element, wherein the light emitting element includes: a light emitting structure disposed on the printed circuit board; a substrate disposed on the light emitting structure; and a plurality of protruding electrodes disposed between the light emitting structure and the printed circuit board. The molding layer may cover the upper surface of the substrate, and may be provided with fine concavo-convex portions on the surface exposed to the outside of the molding layer.

Description

Technical Field

[0001] The invention relates to a light emitting element package and application thereof. Background Art

[0002] Recently, various devices using light emitting diodes (LEDs) are being developed. Devices using light emitting diodes as light sources may be, for example, ordinary lighting or display devices. Devices using light emitting diodes are obtained by finally forming a structure of independently grown red (R: Red), green (G: Green), and blue (B: Blue) light emitting diodes (LEDs) on a substrate.

[0003] In order to apply such a light emitting diode to various devices, it is necessary to have a simple structure and be easy to manufacture. Summary of the invention

[0004] Technical issues

[0005] According to an embodiment of the present invention, an object is to provide a light emitting element package having a simple structure and a simple manufacturing method and an application thereof.

[0006] Technical Solution

[0007] According to an embodiment of the present invention, a light-emitting element package includes: a printed circuit board having a front side and a back side; at least one light-emitting element disposed on the front side and emitting light in the direction toward which the front side is facing; and a molding layer disposed on the printed circuit board and surrounding the light-emitting element, wherein the light-emitting element includes: a light-emitting structure disposed on the printed circuit board; a substrate disposed on the light-emitting structure; and a plurality of protruding electrodes disposed between the light-emitting structure and the printed circuit board. The molding layer may cover the upper surface of the substrate, and a fine concavo-convex portion may be disposed on the surface exposed to the outside of the molding layer.

[0008] In one embodiment of the present invention, the fine concavo-convex portion can be formed by at least one of plasma treatment, micro sandblasting, pattern transfer, dry grinding, and wet etching.

[0009] In an embodiment according to the present invention, the mold layer may have a substantially flat upper surface.

[0010] In an embodiment according to the present invention, the mold layer may reflect, scatter or absorb a portion of external light.

[0011] In an embodiment of the present invention, the mold layer may fill at least a portion between the light emitting structure and the printed circuit board.

[0012] In an embodiment according to the present invention, the mold layer may have an external light reflectivity, an external light scattering rate, or an external light absorption rate of about 50% or more.

[0013] In an embodiment according to the present invention, the mold layer may have a black color.

[0014] In one embodiment according to the present invention, the printed circuit board may include a plurality of upper electrodes arranged on the front side, a plurality of lower electrodes arranged on the back side, and through-hole electrodes connecting the plurality of upper electrodes and the plurality of lower electrodes, and the plurality of protruding electrodes are respectively connected to corresponding upper electrodes among the plurality of upper electrodes.

[0015] In an embodiment of the present invention, a distance between two adjacent lower electrodes among the plurality of lower electrodes may be greater than a distance between two adjacent upper electrodes among the plurality of upper electrodes.

[0016] In one embodiment of the present invention, the light emitting element may be provided in plurality. For example, the light emitting element may be provided in four, and the light emitting structure of each light emitting element includes: a plurality of epitaxial stacks, which are sequentially stacked on the substrate to emit light of different wavelength bands, and the light emission areas overlap each other.

[0017] In one embodiment according to the present invention, the multiple epitaxial stacks may include: a first epitaxial stack that emits a first light; a second epitaxial stack that is disposed on the first epitaxial stack and emits a second light in a band different from that of the first light; and a third epitaxial stack that is disposed on the second epitaxial stack and emits a third light in a band different from that of the first and second lights.

[0018] In an embodiment according to the present invention, each of the first to third epitaxial stacks may include: a p-type semiconductor layer; an n-type semiconductor layer; and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer.

[0019] In one embodiment according to the present invention, the raised electrode may include: a first raised electrode connected to the p-type semiconductor layer of the first epitaxial stack; a second raised electrode connected to the p-type semiconductor layer of the second epitaxial stack; a third raised electrode connected to the p-type semiconductor layer of the third epitaxial stack; and a fourth raised electrode connected to the n-type semiconductor layer from the first epitaxial stack to the third epitaxial stack.

[0020] In one embodiment of the present invention, the light-emitting element may include first to fourth light-emitting elements, the lower electrode includes first to sixth scan pads, a first data pad and a second data pad, the first light-emitting element is connected to the first to third scan pads and the first data pad, the second light-emitting element is connected to the first to third scan pads and the second data pad, the third light-emitting element is connected to the fourth to sixth scan pads and the first data pad, and the fourth light-emitting element is connected to the fourth to sixth scan pads and the second data pad.

[0021] In one embodiment according to the present invention, in each light emitting element, the raised electrodes may include first to fourth raised electrodes, the first to third raised electrodes are applied with first to third scan signals, and the fourth raised electrode is applied with a data signal.

[0022] In one embodiment of the present invention, the molding layer may be formed by a vacuum lamination method.

[0023] In one embodiment of the present invention, the light emitting element package may be used in a display device or a vehicle lighting device, and in this case, may include: a base substrate; and at least one light emitting element package disposed on the base substrate.

[0024] According to an embodiment of the present invention, a light emitting element package can be formed by the following steps: forming a light emitting element; arranging the light emitting element on a printed circuit board; forming a molding layer on the printed circuit board by vacuum lamination in a manner covering the light emitting element; processing the surface exposed to the outside of the molding layer to form fine concave-convex portions on the surface of the molding layer; cutting the printed circuit board and the molding layer to form a light emitting element package, wherein the molding layer can cover the upper surface of the printed circuit board and can include a material that reflects, scatters or absorbs a portion of external light.

[0025] Effects of the Invention

[0026] According to an embodiment of the present invention, a light emitting element package having a simple structure and a simple manufacturing method is provided. Also, according to an embodiment of the present invention, a display device using the light emitting element is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a cross-sectional view illustrating a light emitting element according to an embodiment of the present invention.

[0028] Figure 2a is a plan view specifically illustrating a light emitting element according to an embodiment of the present invention, Figure 2b is based on Figure 2a Cross-sectional view along line A-A'.

[0029] Figures 3a to 7b are diagrams sequentially illustrating a method for manufacturing a light emitting element according to an embodiment of the present invention, Figure 3a , Figure 4a , Figure 5a , Figure 6a and Figure 7a For the plan view, Figure 3b , Figure 4b , Figure 5b , Figure 6b and Figure 7b For along Figure 3a , Figure 4a , Figure 5a , Figure 6a and Figure 7a Cross-sectional view along line A-A'.

[0030] Figures 8a to 8e The diagrams sequentially illustrate a method for manufacturing a light emitting element package.

[0031] Figure 9a as well as Figure 9b The following are scanning electron microscope (SEM) photographs showing the mold layer when it is plasma treated and when it is not plasma treated.

[0032] Figures 10a to 10e The diagram is a cross-sectional view sequentially showing the steps of forming fine concavoconvex portions on the surface of the mold layer using an imprint mold.

[0033] Fig.11a FIG. 1 is a plan view of a light emitting element package according to an embodiment of the present invention, and is a top view showing a state where four light emitting elements are mounted in a matrix shape on a printed circuit board. Fig.11b yes Fig.11a The back view of the light emitting element package shown.

[0034] Fig.12 yes Fig.11a and Fig.11b The circuit diagram of the light emitting element package is shown.

[0035] Fig.13 This is a schematic cross-sectional view showing a state in which a light source module is manufactured by mounting a plurality of light emitting element packages on a base substrate for application in a display device, a vehicle lighting device, or the like.

[0036] Fig.14 FIG. 1 is a plan view conceptually illustrating a case where a light emitting element package according to an embodiment of the present invention is applied to a display device.

[0037] Fig.15 It is an enlarged image Fig.14 Floor plan of the P1 section.

[0038] The most preferred embodiment

[0039] The present invention is capable of various modifications and may have various forms, and specific embodiments are illustrated in the accompanying drawings and described in detail in this specification. However, this is not intended to limit the present invention to a specific disclosed form, and should be understood to include all modifications, equivalents, and even substitutes included in the concept and technical scope of the present invention.

[0040] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

[0041] The present invention relates to a light emitting element, and more particularly to a light emitting element that emits light. The light emitting element of the present invention can be used as a light source in various devices.

[0042] Figure 1 is a cross-sectional view illustrating a light emitting element according to an embodiment of the present invention.

[0043] Reference Figure 1 According to an embodiment of the present invention, the light emitting element comprises a light emitting structure composed of a plurality of epitaxial stacks stacked in sequence. The light emitting structure is disposed on a substrate 11 .

[0044] The substrate 11 is provided in a plate shape having a front surface and a back surface.

[0045] The plurality of epitaxial stacks included in the light emitting structure may be provided as more than two, and each emits light of a different wavelength band. That is, the epitaxial stacks are provided as a plurality, and each has an energy band that is the same as or different from each other. In this embodiment, the light emitting structure is illustrated as a case where three layers of epitaxial stacks are sequentially stacked on the front surface of the substrate 11, and the plurality of epitaxial stacks are stacked in the order of the third epitaxial stack 40, the second epitaxial stack 30, and the first epitaxial stack 20 from the front surface of the substrate 11.

[0046] The substrate 11 can be formed using a light-transmitting insulating material.

[0047] The material of the substrate 11 may be one of the growth substrates capable of growing the epitaxial stack (ie, the third epitaxial stack 40) disposed on the front side of the substrate 11. In one embodiment of the present invention, the substrate 11 may be sapphire (Al 2 O 3), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium oxide (Ga 2 O 3 ) or silicon (Si) substrate.

[0048] The direction in which each epitaxial stack faces the back side of the substrate 11 ( Figure 1 At this time, the light emitted from one epitaxial stack member transmits another epitaxial stack member located in the light path and travels in the direction toward which the back side of the substrate 11 faces.

[0049] In this embodiment, the first epitaxial stack 20 can emit a first light, the second epitaxial stack 30 can emit a second light, and the third epitaxial stack 40 can emit a third light. Here, the first to third lights can be the same light as each other, or can be different lights. In one embodiment of the present invention, the first to third lights can be color lights in the visible light band.

[0050] In one embodiment of the present invention, the first light to the third light may be light of different wavelengths having short wavelengths in sequence. That is, the first light to the third light may have the same or different wavelengths, and may be light of short wavelengths having increasingly higher energy from the first light to the third light. In this embodiment, the first light may be red light, the second light may be green light, and the third light may be blue light.

[0051] However, the first light to the third light may be lights of different wavelength bands having long wavelengths in sequence, or may be lights of different wavelength bands arranged irregularly regardless of the length of the wavelength. As an embodiment, the first light may be red light, the second light may be blue light, and the third light may be green light.

[0052] In the light emitting structure according to an embodiment of the present invention having the above structure, each epitaxial stack is independently connected to a signal wiring for applying a light emitting signal, so that each epitaxial stack is independently driven. Accordingly, a variety of colors can be achieved by determining whether to emit light from each epitaxial stack. In addition, since the epitaxial stacks emitting light of different wavelengths are formed by overlapping each other, they can be formed in a narrow area.

[0053] More specifically, in a light-emitting stack according to an embodiment of the present invention, a third epitaxial stack 40 can be arranged on the substrate 11, a second epitaxial stack 30 can be arranged on the third epitaxial stack 40 via a second bonding layer 63, and a first epitaxial stack 20 can be arranged on the second epitaxial stack 30 via a first bonding layer 61.

[0054] The first adhesive layer 61 and the second adhesive layer 63 can be formed using non-conductive materials and include materials with light transmittance. For example, the first adhesive layer 61 and the second adhesive layer 63 can use an optically clear adhesive. However, an embodiment of the present invention is not limited to this, and the first adhesive layer 61 and the second adhesive layer 63 can also be optically transparent for a specific wavelength. For example, the first adhesive layer 61 and the second adhesive layer 63 can also be a color filter that only transmits a specific wavelength and exhibits a predetermined color. The color can be selected from a variety of colors, for example, it can be red, blue or green, or a color different from this.

[0055] The third epitaxial stack 40 includes an n-type semiconductor layer 41, an active layer 43, and a p-type semiconductor layer 45 arranged in sequence from the bottom to the top. The n-type semiconductor layer 41, the active layer 43, and the p-type semiconductor layer 45 of the third epitaxial stack 40 may include a semiconductor material that emits blue light. A third p-type contact electrode 45p is disposed on the upper portion of the p-type semiconductor layer 45 of the third epitaxial stack 40.

[0056] The second epitaxial stack 30 includes a p-type semiconductor layer 35, an active layer 33, and an n-type semiconductor layer 31 arranged in sequence from the bottom to the top. The p-type semiconductor layer 35, the active layer 33, and the n-type semiconductor layer 31 of the second epitaxial stack 30 may include a semiconductor material that emits green light. A second p-type contact electrode 35p is provided at the lower portion of the p-type semiconductor layer 35 of the second epitaxial stack 30.

[0057] The first epitaxial stack 20 includes a p-type semiconductor layer 25, an active layer 23, and an n-type semiconductor layer 21 arranged in sequence from the bottom to the top. The p-type semiconductor layer 25, the active layer 23, and the n-type semiconductor layer 21 of the first epitaxial stack 20 may include a semiconductor material that emits red light. A first p-type contact electrode 25p may be disposed at the bottom of the p-type semiconductor layer 25 of the first epitaxial stack 20.

[0058] A first n-type contact electrode may be disposed on the upper portion of the n-type semiconductor layer 21 of the first epitaxial stack 20. The first n-type contact electrode 21n may be formed of a single layer or multiple layers of metal. For example, the first n-type contact electrode 21n may be made of various materials including metals such as Al, Ti, Cr, Ni, Au, Ag, Ti, Sn, W, Cu, or alloys thereof.

[0059] In the present embodiment, the first p-type contact electrode 25 p , the second p-type contact electrode 35 p , and the third p-type contact electrode 45 p may be formed of a transparent conductive material to transmit light.

[0060] In this embodiment, the n-type semiconductor layers 21, 31, and 41 of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 may be connected to a common wiring. Here, the common wiring is a wiring to which a common voltage is applied. In addition, the p-type semiconductor layers 25, 35, and 45 of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 may be connected to light emitting signal wirings through p-type contact electrodes 25p, 35p, and 45p, respectively. Specifically, the first n-type contact electrode 21n, the second n-type semiconductor layer 31, and the third n-type semiconductor layer 41 are applied with a common voltage S through the common wiring. C , the p-type contact electrodes 25p, 35p, 45p of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 are applied with light-emitting signals through the light-emitting signal wiring, thereby controlling the light emission of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40. Here, the light-emitting signal includes the first light-emitting signal S corresponding to the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40, respectively. R , the second light emitting signal S G , the third light emitting signal S B In one embodiment of the present invention, the first light emitting signal S R It can be a signal corresponding to the red light, and the second light emitting signal S G It can be a signal corresponding to the emission of green light, and the third emission signal S B It may be a signal corresponding to the emission of blue light.

[0061] According to the above-mentioned embodiment, the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 are driven according to the light emission signal applied to each epitaxial stack. R is driven, the second epitaxial stack 30 emits light according to the second light emitting signal S G is driven, the third epitaxial stack 40 emits light according to the third light emitting signal S B Here, the first light emitting signal S R , the second light emitting signal S G and the third light emitting signal S B The first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 are independently applied to each other, and as a result, the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 are independently driven. The light-emitting stack can ultimately provide light of various colors and various light amounts through a combination of the first light to the third light emitted downward from the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40.

[0062] In the above-mentioned embodiment, the following situation is described: a common voltage is provided to the n-type semiconductor layers 21, 31, 41 of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40, and a light emitting signal is applied to the p-type semiconductor layers 25, 35, 45 of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40. However, the embodiment of the present invention is not limited to this. In another embodiment of the present invention, a common voltage may also be provided to the p-type semiconductor layers 25, 35, 45 of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40, and a light emitting signal may be applied to the n-type semiconductor layers 21, 31, 41 of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40.

[0063] The light-emitting stack according to one embodiment of the present invention having the above structure does not realize different lights on different planes separated from each other when realizing colors, but provides a part of different lights in the overlapping area, thereby enabling miniaturization and integration of light-emitting elements. According to the present invention, by providing a stack by overlapping a part of the light-emitting elements that realize different lights in one area, full color can be realized in an area significantly smaller than that of the prior art. Therefore, a high-resolution device can be manufactured even in a smaller area. In addition, for the light-emitting stack having the above structure, in the case of stacking epitaxial stacks that emit light of the same wavelength band as each other instead of epitaxial stacks that emit light of different wavelength bands, a light-emitting device that controls the intensity of light in a variety of ways can be manufactured.

[0064] After the light-emitting stack according to one embodiment of the present invention sequentially stacks multiple epitaxial stacks on a substrate, a contact portion is formed on the multiple epitaxial stacks through a minimum number of steps and a wiring portion is connected. In addition, compared with the manufacturing method of the existing display device in which light-emitting elements of various colors are manufactured and mounted separately, in the present invention, only one light-emitting stack needs to be mounted instead of multiple light-emitting elements, thereby significantly simplifying the manufacturing method.

[0065] The light emitting element according to an embodiment of the present invention can be implemented in various forms. Figure 2a and Figure 2b A specific embodiment will be described.

[0066] Figure 2a is a plan view specifically illustrating a light emitting element according to an embodiment of the present invention, Figure 2b It is along Figure 2a Cross-sectional view of line A-A'.

[0067] Reference Figure 2a and Figure 2bAccording to an embodiment of the present invention, the light emitting element comprises: a substrate 11; a light emitting structure, which is disposed on the substrate and comprises a plurality of epitaxial stacks; and protruding electrodes 20bp, 30bp, 40bp, and 50bp, which are disposed on the light emitting structure. The light emitting structure comprises a third epitaxial stack 40, a second epitaxial stack 30, and a first epitaxial stack 20 stacked on the substrate 11.

[0068] The first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 respectively include a p-type semiconductor layer, an n-type semiconductor layer, and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer. In the drawings, the n-type semiconductor layer, the p-type semiconductor layer, and the active layer of each epitaxial stack are illustrated as one layer of epitaxial stack.

[0069] A third p-type semiconductor layer 45 , a second adhesive layer 63 , and a second p-type contact electrode 35 p are sequentially disposed on the third epitaxial stack 40 . The second p-type contact electrode 35 p is in direct contact with the second epitaxial stack 30 .

[0070] A first adhesive layer 61 and a first p-type contact electrode 25 p are sequentially disposed on the second epitaxial stack 30 . The first p-type contact electrode 25 p is in direct contact with the first epitaxial stack 20 .

[0071] A first n-type contact electrode 21n is disposed on the first epitaxial stack 20. The first n-type semiconductor layer 21 may have a structure in which a portion of an upper surface is recessed, and the first n-type contact electrode 21n may be disposed at the recessed portion.

[0072] A single-layer or multi-layer insulating film is provided on the substrate 11 on which the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 are stacked. In one embodiment of the present invention, a first insulating film 81 and a second insulating film 83 covering the stack of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 may be provided on the side and a portion of the upper surface of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40. The first insulating film 81 and / or the second insulating film 83 may be formed using a variety of organic / inorganic insulating materials, and the material or form thereof is not limited. For example, the first insulating film 81 and / or the second insulating film 83 may be provided as a silicon oxide film, a silicon nitride film, an Al2O3 film, or a silicon nitride film. 2 O 3 Or a distributed Bragg reflector (DBR). In addition, the first insulating film 81 and / or the second insulating film 83 may also be a black organic polymer film.

[0073] The pixel is provided with a contact portion for connecting the wiring portion to the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40. The contact portion includes a first contact portion 20C for providing a light emitting signal to the first epitaxial stack 20, a second contact portion 30C for providing a light emitting signal to the second epitaxial stack 30, a third contact portion 40C for providing a light emitting signal to the third epitaxial stack 40, and a fourth contact portion 50C for applying a common voltage to the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40. In an embodiment of the present invention, the first contact portion 20C, the second contact portion 30C, the third contact portion 40C, and the fourth contact portion 50C can be provided at various positions when viewed from a plane.

[0074] The first contact portion 20C, the second contact portion 30C, the third contact portion 40C, and the fourth contact portion 50C may include a first pad 20pd, a second pad 30pd, a third pad 40pd, a fourth pad 50pd, and a first bump electrode 20bp, a second bump electrode 30bp, a third bump electrode 40bp, and a fourth bump electrode 50bp, respectively.

[0075] The first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd are separated and insulated from each other.

[0076] The first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp may be separated and insulated from each other, and are disposed in a region (i.e., a light emitting region) overlapping with the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40. The first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp may be formed across the edge portions of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40, respectively, and thus may cover the side surfaces of the active layers of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40.

[0077] The first contact portion 20C includes a first pad 20pd and a first protruding electrode 20bp electrically connected to each other. The first pad 20pd is disposed on the first p-type contact electrode 25p of the first epitaxial stack 20, and is connected to the first p-type contact electrode 25p through a first contact hole 20CH disposed in the first insulating film 81. At least a portion of the first protruding electrode 20bp overlaps with the first pad 20pd. The first protruding electrode 20bp is connected to the first pad 20pd through the first through hole 20ct with the second insulating film 83 interposed in the region overlapping with the first pad 20pd.

[0078] The second contact portion 30C includes a second pad 30pd and a second protruding electrode 30bp electrically connected to each other. The second pad 30pd is provided on the second p-type contact electrode 35p and is connected to the second p-type contact electrode 35p through a second contact hole 30CH formed in the first insulating film 81. At least a portion of the second protruding electrode 30bp overlaps with the second pad 30pd. The second protruding electrode 30bp is connected to the second pad 30pd through a second through hole 30ct with the second insulating film 83 interposed therebetween in the region overlapping with the second pad 30pd.

[0079] The third contact portion 40C includes a third pad 40pd and a third protruding electrode 40bp electrically connected to each other. The third pad 40pd is provided on the third p-type contact electrode 45p and is connected to the third p-type contact electrode 45p through a third contact hole 40CH formed in the first insulating film 81. At least a portion of the third protruding electrode 40bp overlaps with the third pad 40pd. The third protruding electrode 40bp is connected to the third pad 40pd through a third through hole 40ct with the second insulating film 83 interposed therebetween in the region overlapping with the third pad 40pd.

[0080] The fourth contact portion 50C includes a fourth pad 50pd and a fourth protruding electrode 50bp electrically connected to each other. The fourth pad 50pd is connected to the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 through the first sub-contact hole 50Cha, the second sub-contact hole 50CHb, and the third sub-contact hole 50CHc respectively provided on the first n-type contact electrode 21n, the second n-type semiconductor layer, and the third n-type semiconductor layer of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40. Here, a portion of the upper surface of the third epitaxial stack 40 is removed to expose the third n-type semiconductor layer, and the fourth pad 50pd is connected to the third n-type semiconductor layer of the third semiconductor layer.

[0081] Specifically, the fourth pad 50pd is connected to the first epitaxial stack 20 through the first sub-contact hole 50Cha provided on the first n-type contact electrode of the first epitaxial stack 20, is connected to the second epitaxial stack 30 through the second sub-contact hole 50CHb provided on the second n-type semiconductor layer of the second epitaxial stack 30, and is connected to the third epitaxial stack 40 through the third sub-contact hole 50CHc provided on the third n-type semiconductor layer of the third epitaxial stack 40. At least a portion of the fourth protruding electrode 50bp overlaps with the fourth pad 50pd. The fourth protruding electrode 50bp is connected to the fourth pad 50pd through the fourth through hole 50ct with the second insulating film 83 interposed therebetween in the region overlapping with the fourth pad 50pd.

[0082] In one embodiment of the present invention, although not shown in the figure, the substrate 11 may also be provided with wiring portions (refer to FIG. 5 ) corresponding to the first contact portion 20C, the second contact portion 30C, the third contact portion 40C, and the fourth contact portion 50C, and respectively electrically connected to the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp and / or a driving element such as a thin film transistor connected to the wiring portion. For example, the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 may be connected with: a first light emitting signal wiring to a third light emitting signal wiring, which respectively provides a light emitting signal to the first epitaxial stack 20, the second epitaxial stack 30bp, and the third epitaxial stack 40 through the first protruding electrode 20bp, the second protruding electrode 30bp, and the third protruding electrode 40bp; and a common wiring, which respectively provides a common voltage to the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 through the fourth protruding electrode 50bp. In the present embodiment, the first to third light emitting signal wirings may correspond to the first to third scan wirings, respectively, and the common wiring may correspond to the data wiring.

[0083] Figures 3a to 7b are diagrams sequentially illustrating a method for manufacturing a light emitting element according to an embodiment of the present invention, Figure 3a , Figure 4a , Figure 5a , Figure 6a and Figure 7a For the plan view, Figure 3b , Figure 4b , Figure 5b , Figure 6b and Figure 7b For along Figure 3a , Figure 4a , Figure 5a , Figure 6a and Figure 7a Cross-sectional view of line A-A'.

[0084] Reference Figure 3a and Figure 3b , a light emitting structure is formed on the substrate 11. The light emitting structure may be sequentially grown with a third epitaxial stack 40, a third p-type contact electrode 45p, a second bonding layer 63, a second p-type contact electrode 35p, a second epitaxial stack 30, a first bonding layer 61, a first p-type contact electrode 25p, a first epitaxial stack 20, and a first n-type contact electrode 21n through various processes such as chemical vapor deposition, metal organic chemical vapor deposition, and molecular beam deposition.

[0085] The light emitting structure can be patterned into various shapes in consideration of the overall wiring connection structure, etc. For example, the light emitting structure can be patterned into a polygonal shape when viewed from a plane in consideration of the positions of the contact holes, through holes, and pads described above.

[0086] According to one embodiment, the first epitaxial stack 20, the second epitaxial stack 30, the third epitaxial stack 40 and a portion of the first p-type contact electrode 25p, the second p-type contact electrode 35p, and the third p-type contact electrode 45p may be etched through an etching process to form the first contact hole 20CH, the second contact hole 30CH, the third contact hole 40CH, and the fourth contact hole 50CH (see Figure 4a and Figure 4b ) is exposed at the upper surface of the position.

[0087] Reference Figure 4a and Figure 4b , a first insulating film 81 may be conformally formed on the vertically stacked light emitting structures. The first insulating film 81 may include an oxide, such as silicon oxide and / or silicon nitride.

[0088] The first insulating film 81 is patterned and a portion thereof is removed, thereby forming a first contact hole 20CH, a second contact hole 30CH, a third contact hole 40CH, and a fourth contact hole 50CH.

[0089] The first contact hole 20CH is arranged on the first p-type contact electrode 25p to expose a portion of the first p-type contact electrode 25p. The second contact hole 30CH is arranged on the second epitaxial stack 30 to expose a portion of the second p-type contact electrode 35p. The third contact hole 40CH is arranged on the third p-type contact electrode 45p to expose a portion of the third p-type contact electrode 45p. The fourth contact hole 50CH includes a first sub-contact hole 50Cha, a second sub-contact hole 50CHb, and a third sub-contact hole 50CHc, which are arranged on the first n-type contact electrode 21n, the second n-type semiconductor layer of the second epitaxial stack 30, and the third n-type semiconductor layer of the third epitaxial stack 40, respectively, to expose a portion of the first n-type contact electrode 21n, the second n-type semiconductor layer of the second epitaxial stack 30, and the third n-type semiconductor layer of the third epitaxial stack 40.

[0090] Reference Figure 5a and Figure 5b The first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd are formed on the first insulating film 81 having the first contact hole 20CH, the second contact hole 30CH, the third contact hole 40CH, and the fourth contact hole 50CH. The conductive film material used to form the first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd can be made of various conductive materials including metals, for example, at least one of Ni, Ag, Au, Pt, Ti, Al, and Cr.

[0091] The first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd are formed to overlap with the portions where the first contact hole 20CH, the second contact hole 30CH, the third contact hole 40CH, and the fourth contact hole 50CH are formed. Here, the fourth pad 50pd may be formed to overlap with the portions where the first sub-contact hole 50Cha, the second sub-contact hole 50CHb, and the third sub-contact hole 50CHc are formed.

[0092] Reference Figure 6a and Figure 6b , a second insulating film 83 may be conformally formed on the first insulating film 81. The second insulating film 83 may include an oxide, such as silicon oxide and / or silicon nitride.

[0093] The second insulating film 83 is patterned and a portion thereof is removed, thereby forming a first through hole 20 ct , a second through hole 30 ct , a third through hole 40 ct , and a fourth through hole 50 ct .

[0094] The first through hole 20ct, the second through hole 30ct, the third through hole 40ct, and the fourth through hole 50ct are respectively arranged on the first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd to expose a portion of the first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd.

[0095] Reference Figure 7a and Figure 7b The first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp are formed on the second insulating film 83 having the first through hole 20ct, the second through hole 30ct, the third through hole 40ct, and the fourth through hole 50ct.

[0096] The first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp are respectively formed to overlap with the portions where the first through hole 20ct, the second through hole 30ct, the third through hole 40ct, and the fourth through hole 50ct are formed, thereby connecting the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp to the first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd through the first through hole 20ct, the second through hole 30ct, the third through hole 40ct, and the fourth through hole 50ct, respectively.

[0097] The first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp may have an area greater than the corresponding first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd. In addition, when viewed from a plane, at least a portion of the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp may overlap with the light emitting region of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 from which light is emitted.

[0098] The first raised electrode 20bp, the second raised electrode 30bp, the third raised electrode 40bp, and the fourth raised electrode 50bp can be formed by plating using various metals. The first raised electrode 20bp, the second raised electrode 30bp, the third raised electrode 40bp, and the fourth raised electrode 50bp can also include a seed layer for forming a metal layer in the plating process. Various metals can be used in the seed layer, such as metals including Cu, Ni, Ti, etc., and various changes can be made according to the metal material to be plated.

[0099] When the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp are formed by plating, the upper surfaces of the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp can be formed flat. The light-emitting structure has an upper step difference due to etching, etc., used to form a contact structure for connection to an external wiring. Therefore, when connected to other elements, the step difference may make it difficult to electrically connect other elements to the light-emitting structure when a general metal layer is formed. However, when formed by plating, an electrode with a flat upper surface can be formed even on a light-emitting structure composed of an epitaxial layer with a large step difference. In addition, the plated first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp themselves can have a flat upper surface, but in order to improve the flatness, the upper surfaces of the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp can be additionally polished.

[0100] The first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp are not particularly limited as long as they are used as wiring materials in semiconductor elements. For example, they can be made of metals and / or metal alloys such as SnAg, Sn, CuSn, CuN, CuAg, Sb, Ni, Zn, Mo, and Co. In one embodiment of the present invention, the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp can be made of only Sn, or can also be made of Cu / Ni / Sn. In the case where the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp are made of Cu / Ni / Sn, it is possible to minimize the diffusion of impurities into the light-emitting structure, and in particular, it is possible to prevent Sn from penetrating into the light-emitting structure by using Cu as the material of the protruding electrode.

[0101] After forming the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp by plating, the strength of the first protruding electrode 20bp, the second protruding electrode 30bp, the third protruding electrode 40bp, and the fourth protruding electrode 50bp can be improved by an additional heat treatment process (i.e., a reflow process).

[0102] In one embodiment of the present invention, the light emitting element having the structure described above can be implemented as a package, and then mounted on other devices (e.g., a printed circuit board) to function as a light emitting element package. Accordingly, various wirings can be additionally provided to form a structure that is easy to mount on other devices.

[0103] Figures 8a to 8e The method of manufacturing the light emitting element package is sequentially illustrated. Figures 8a to 8e In the figure, for the convenience of explanation, the first epitaxial stack to the third epitaxial stack are simplified as the light emitting structure 10, and the first pad to the fourth pad and the first protruding electrode to the fourth protruding electrode are also simplified as the pad pd and the protruding electrode bp. In particular, in the figure, although the light emitting structure 10 is simplified as having a flat upper surface, it is a structure having a step difference and / or an inclination on the upper surface.

[0104] In an embodiment of the present invention, a light emitting element package may be formed by mounting at least one light emitting element 110 on a printed circuit board 11 p or the like formed with wirings, etc. In particular, the light emitting element package may include a plurality of light emitting elements 110 .

[0105] Reference Figure 8a , a printed circuit board 11p is prepared, and a plurality of light emitting elements 110 are arranged on the printed circuit board 11p.

[0106] The printed circuit board 11p is formed with wiring and electrodes for electrical connection between various elements, and at least one light-emitting element 110 can be mounted on the surface of the printed circuit board 11p. The printed circuit board 11p can be arranged in various forms according to the arrangement of its wiring. However, in this embodiment, for the convenience of explanation, the diagram shows the situation where electrodes are arranged on the front and back sides of the substrate 11 and between the front and back sides. However, the arrangement of the wiring of the printed circuit board 11p is not limited to this. In one embodiment of the present invention, the printed circuit board 11p may be flexible or inflexible.

[0107] In one embodiment of the present invention, the printed circuit board 11p has a front side and a back side. The printed circuit board 11p is provided with an upper electrode 11pa on the front side, a lower electrode 11pc on the back side, and a through-hole electrode 11pb that penetrates the front side and the back side of the printed circuit board 11p and connects the upper electrode 11pa and the lower electrode 11pc. The front side of the printed circuit board 11p is the side on which the light-emitting element 110 is mounted. In one embodiment of the present invention, the upper electrode 11pa of the printed circuit board 11p is formed at a position corresponding to the protruding electrode bp of each light-emitting element 110 to be attached later.

[0108] The wiring and / or electrodes on the printed circuit board 11p may be surface treated with ENIG (Electroless Nikel Immersion Gold). For example, in one embodiment of the present invention, in particular, the upper electrode 11pa may be surface treated with ENIG. When the wiring and / or electrodes on the printed circuit board 11p are treated with ENIG, a portion of them melts at a high temperature, thereby making it easy to connect with the protruding electrode bp of the light emitting element 110.

[0109] The light emitting element 110 can be attached to the carrier substrate 11c and arranged on the upper part of the printed circuit board 11p. The carrier substrate 11c is used to transfer the light emitting element 110, and has an adhesive layer 13 formed on one side, and the light emitting element 110 is attached to the carrier substrate 11c through the adhesive layer 13. The adhesive layer 13 can be a silicon-based polymer that has strong heat resistance and can load and unload the light emitting element 110, and can be manufactured in the form of a belt or a sheet and arranged on the lower surface of the carrier substrate 11c. The adhesive layer 13 can be prepared with a member having an adhesive force to the extent that the light emitting element 110 can be stably attached to the carrier substrate 11c, and at the same time having an adhesive force to the extent that the light emitting element 110 can be easily separated when attached to the printed circuit board 11p. That is, the adhesive force of the adhesive layer 13 to the light emitting element 110 can have a value smaller than the adhesive force between the light emitting element 110 and the printed circuit board 11p.

[0110] The light emitting element 110 may be attached to the lower part of the carrier substrate 11c in an inverted form with the substrate 11 located at the upper part and the light emitting structure 10 located at the lower part. Here, the light emitting element 110 attached to the carrier substrate 11c has the following inverted form: the back surface of the substrate 11 is attached to the adhesive layer 13 on the carrier substrate 11c, and the substrate 11 is located at the upper side and the light emitting structure 10 is located at the lower side. The light emitting element 110 is arranged spaced apart on the printed circuit board 11p in a state of being attached to the carrier substrate 11c.

[0111] Reference Figure 8b , the light emitting element 110 is attached to the printed circuit board 11p, and the carrier substrate 11c and the adhesive layer 13 are removed. The light emitting element 110 attached to the carrier substrate 11c can be pressed from the upper part to the lower part so that the protruding electrode bp contacts the corresponding upper electrode 11pa of the printed circuit board 11p. The pressing step can be performed at a high temperature, and a part of the upper electrode 11pa on the printed circuit board 11p melts and connects to the protruding electrode bp of the light emitting element 110. Thereafter, the carrier substrate 11c is removed, and the adhesive layer 13 on the carrier substrate 11c has a smaller adhesive force than the adhesive force between the protruding electrode bp of the light emitting element 110 and the upper electrode 11pa of the printed circuit board 11p, so that the carrier substrate 11c can be easily separated from the light emitting element 110.

[0112] As described above, the protruding electrode bp is attached to the upper electrode 11pa of the printed circuit board 11p, so that the overall structure is arranged in the order of the printed circuit board 11p, the protruding electrode bp, the pad pd, the light emitting structure 10, and the substrate 11 from the bottom to the top. The light from the light emitting structure 10 travels from the light emitting structure 10 to the direction toward which the back side of the substrate 11 faces (the upper direction in the drawing), so the direction toward which the front side of the printed circuit board 11p faces is the direction in which the light is emitted.

[0113] Reference Figure 8c , a mold layer 90 is formed on the printed circuit board 11p on which the light emitting element 110 is mounted. The mold layer 90 has a property of transmitting at least a portion of the light, and reflects, scatters and / or absorbs a portion of the external light. The mold layer 90 covers at least a portion of the light emitting element 110 and reflects, scatters and / or absorbs a portion of the external light in various directions, thereby preventing the external light from being reflected in a specific direction, especially preventing the external light from being reflected in a direction that can be recognized by the user. In addition, the mold layer 90 covers at least a portion of the light emitting element 110, thereby improving the reliability of the light emitting element 110 by preventing the light emitting element 110 from being damaged due to moisture and / or physical impact from the outside.

[0114] The mold layer 90 is provided to be capable of reflecting, scattering and / or absorbing a portion of the external light in various directions, and in particular, the mold layer 90 may have a black color. However, in addition to black, in order to prevent the external light from being reflected toward the user to the greatest extent, as long as a portion of the external light can be reflected, scattered and / or absorbed in various directions, the mold layer 90 may have other colors besides black.

[0115] In order to prevent external light from being reflected in a specific direction, the mold layer 90 surrounds at least a portion of the light emitting element 110, and is particularly formed to cover the back surface of the substrate 11 in the light emitting element 110. In one embodiment of the present invention, the mold layer 90 is formed to cover the back surface of the substrate 11, thereby preventing light from the outside from being reflected by the back surface of the substrate 11 and being recognized by the user's eyes. In order to prevent such external light from being reflected in a specific direction, the mold layer 90 can reflect, scatter or absorb more than about 50% of the external light in various directions. In one embodiment of the present invention, the mold layer 90 can reflect, scatter or absorb more than about 80% of the external light.

[0116] The mold layer 90 may be formed to have a thickness that allows light to be transmitted, so that light from the light emitting structure 10 toward the back direction of the substrate 11 (i.e., the upper direction) can be emitted to the maximum extent. For example, when the mold layer 90 is disposed on the back side of the light emitting structure 10, it may be formed to have a thickness that allows more than 50% of the light from the light emitting structure to be transmitted, and may be set to a thickness of 100 micrometers or less from the back side of the light emitting structure 10. Alternatively, the mold layer 90 may be set to a height from the back side of the light emitting structure 10 that is less than the thickness of the light emitting element.

[0117] The mold layer 90 may be formed not only on the back side of the substrate 11 but also cover the side of the light emitting element 110, that is, the side of the substrate 11 and the side of the light emitting structure 10. The mold layer 90 also covers the side of the light emitting element 110, so that at least a portion of the light emitted through the side of the light emitting element 110 may be absorbed by the mold layer 90. Accordingly, the mold layer 90 can prevent the light emitted from the light emitting structure 10 from mixing with the light emitted from the adjacent light emitting structure 10.

[0118] In one embodiment of the present invention, the mold layer 90 may be formed by using an organic polymer that absorbs light among organic polymers. In one embodiment of the present invention, in addition to the organic polymer, the mold layer 90 may also include an organic / inorganic filler therein, or may not include it. For example, in the case where the mold layer 90 includes a filler, the filler may be an inorganic filler. The inorganic filler may be various, such as silicon dioxide, aluminum oxide, etc.

[0119] Furthermore, the mold layer 90 is filled in at least a portion between the light emitting structure 10 and the printed circuit board 11p. That is, the mold layer 90 can be filled in the empty space between the light emitting structure 10 provided with the protruding electrode bp and the printed circuit board 11p. By filling the mold layer 90 in the space between the light emitting structure 10 and the printed circuit board 11p, the heat generated from the light emitting structure 10 can be effectively dispersed, thereby improving the heat dissipation characteristics of the light emitting element 110.

[0120] In one embodiment of the present invention, the molding layer 90 can be manufactured by various methods such as lamination, plating, chemical vapor deposition, printing, transfer molding, etc. When manufacturing the molding layer 90, an additional process for flattening the surface of the molding layer 90 can be included and various thin film processes can be used. For example, in order to flatten the surface of the molding layer 90, squeegeeing can be performed after plating and before the molding layer 90 material is cured, or pressure flattening can be performed using a flat plate. In addition, after the molding layer 90 material is cured, polishing or lapping can be performed on the surface.

[0121] In one embodiment of the present invention, the mold layer 90 may be formed by transfer molding, so that a flat upper surface can be obtained on the upper surface of the mold layer 90. The transfer molding method may be formed by extrusion molding as follows: after placing a predetermined unit package with a light-emitting element mounted on it in a molding mold, a resin liquefied from a solid state is pressed into the mold to be molded.

[0122] Among the methods for flattening the surface of the mold layer 90, the lamination method may be a vacuum lamination method performed in a vacuum. In this case, the mold layer 90 may be formed using an organic polymer sheet in the form of a thin film, and after the organic polymer sheet is arranged on the printed circuit board 11p on which the light-emitting element 110 is mounted, it may be formed by heating and pressurizing in a vacuum atmosphere. The organic polymer sheet may partially exhibit fluidity under high temperature and high pressure, and such fluidity may lead to filling in the area between the light-emitting elements 110 and the area between the light-emitting element 110 and the printed circuit board 11p. Thereafter, the organic polymer sheet is cured.

[0123] In one embodiment of the present invention, the mold layer 90 is formed by vacuum lamination, so that the upper surface of the mold layer 90 can obtain a flat upper surface. Conventionally, the mold layer 90 is formed by a process of curing after applying an organic polymer material. In this case, a difference in the upper surface height occurs between a portion where the light emitting element 110 is mounted and an area where the light emitting element 110 is not mounted. The difference in the upper surface height causes unevenness in light emitted from the light emitting element 110. However, according to one embodiment of the present invention, by forming the upper surface of the mold layer 90 flat, the uniformity of light can be improved regardless of the position of the light emitting element 110.

[0124] In addition, the light emitting element 110 is stably held by the mold layer 90, thereby improving the rigidity of the light emitting element package. In particular, the mold layer 90 can fill the space between the printed circuit board 11p and the light emitting element 110, thereby increasing the bonding force between the printed circuit board 11p and the light emitting element 110. Accordingly, the rigidity of the entire light emitting element package is further improved.

[0125] Reference Figure 8d , the surface of the mold layer 90 is textured, so that fine concavoconvex portions 91 are formed on the surface exposed to the outside of the mold layer 90. The fine concavoconvex portions 91 are structures for scattering, and are used to scatter light from the outside by means of the fine concavoconvex portions 91, thereby further minimizing the reflection of external light to the user's field of vision. In the case where the light-emitting element package is used in various applications such as lighting or display devices, the substrate 11 of the light-emitting element is arranged at a position opposite to the user, so that the light reflected by the substrate 11 needs to be blocked as much as possible. Accordingly, on the basis of the mold layer 90 having light scattering, light reflecting, and light absorbing properties, the fine concavoconvex portions 91 are additionally formed, thereby further reducing the glare of the user caused by the reflection of external light.

[0126] In one embodiment of the present invention, the mold layer may further include fillers such as silicon dioxide or aluminum oxide therein, so that such filler particles may be exposed on the surface of the mold layer after texturing. In this case, the filler particles are randomly exposed on the surface, thereby further improving the degree of scattering of external light.

[0127] There are many methods for forming the fine concavoconvex portion 91. In one embodiment of the present invention, the surface of the mold layer 90 may be etched by plasma.

[0128] Figure 9a as well as Figure 9b The following are scanning electron microscope (SEM) photographs showing the mold layer when it is plasma treated and when it is not plasma treated.

[0129] Reference Figure 9a After the plasma treatment, it can be confirmed that a plurality of fillers are randomly exposed to the outside on the surface of the molded layer. Most of the fillers are exposed to the external surface in various sizes and frequencies, thereby significantly improving the scattering effect of external light by the fillers.

[0130] In comparison, refer to Figure 9b In the case of no treatment, it can be confirmed that the amount exposed to the outside is significantly reduced. From this, it can be confirmed that fine concavoconvex parts can be easily formed on the surface of the mold layer by plasma treatment.

[0131] Here, as a result of analyzing the components before and after the plasma treatment, no change in the components of the mold layer was observed, and it was found that the fine concavo-convex portions could be formed without causing the modification of the properties of the mold layer.

[0132] In one embodiment of the present invention, in addition to plasma treatment, micro sandblasting can be used to roughen the surface to form fine concave-convex parts. In the case of micro sandblasting, microparticles of several microns to tens of microns are sprayed onto the surface of the molding layer at high pressure, and the surface of the molding layer is cleaned by ultrasonic cleaning and then dried, so that fine concave-convex parts can be formed on the surface of the molding layer. Alternatively, the surface of the molding layer 90 can be dry-grinded or wet-etched alone, or the above methods can be used in combination.

[0133] According to an embodiment of the present invention, the fine concavo-convex pattern is transferred to the surface of the mold layer using an imprint mold having a fine concavo-convex pattern formed thereon, thereby forming fine concavo-convex portions on the surface of the mold layer.

[0134] Figures 10a to 10e Cross-sectional views are sequentially shown of the steps of forming fine concavoconvex portions on the surface of the mold layer using an imprint mold.

[0135] Reference Fig.10a First, a master mold MM is manufactured. The master mold MM is a mold formed with the same pattern (reference numeral 91) as the fine concavoconvex portion to be transferred to the surface of the molding layer, and is a mold for forming a reverse pattern on the imprint mold IMP later.

[0136] Reference Fig.10b After the imprint mold IMP material is coated on the master mold MM and the imprint mold IMP is hardened, the imprint mold IMP is separated from the master mold MM. Thus, a reverse pattern of the fine concave-convex portions on the master mold MM (marked as 91R) is formed on the lower surface of the imprint mold IMP.

[0137] Reference Fig.10cAfter the imprint mold IMP formed with the reverse pattern 91R is arranged on the upper part of the molding layer 90, pressure is applied from the upper part to the lower part.

[0138] Reference Fig.10d The reverse pattern 91R of the imprinting mold IMP is transferred onto the upper surface of the molding layer 90 by pressurizing the imprinting mold IMP, and the imprinting mold IMP is separated from the molding layer 90 after the transfer.

[0139] Reference Fig.10e , fine concavoconvex portions are formed on the upper surface of the molding layer 90 from which the imprint mold IMP is removed.

[0140] According to this embodiment, the shape of the fine concavoconvex part of the final molding layer is determined according to the shape of the fine concavoconvex pattern on the master mold. According to this, the shape, density, etc. of the fine concavoconvex part of the master mold can be changed as needed. According to this, the shape, density, etc. of the fine concavoconvex part of the molding layer can also be controlled, and finally the degree of scattering of external light by the fine concavoconvex part on the upper surface of the molding layer can be adjusted more easily.

[0141] Refer again Figure 8d After forming the mold layer 90 having fine concavoconvex portions, cutting is performed so that the printed circuit board 11p and the light emitting element 110 are included in the light emitting element package in an appropriate size, thereby forming a light emitting element package. At this time, the cutting can be performed so that the light emitting element 110 is separated and included individually, or it can be cut in a larger area so that a plurality of light emitting elements 110 are included. The number of light emitting elements 110 and their area during cutting can be set differently according to the device to which the light emitting element 110 is mounted later.

[0142] In the light emitting element package, the number of light emitting elements mounted on a printed circuit board constituting one light emitting element package can be variously changed. Fig.11a As a plan view illustrating a light emitting element package according to an embodiment of the present invention, this is a top view illustrating a state where four light emitting elements are mounted in a matrix shape on a printed circuit board. Fig.11b yes Fig.11a The back view of the light emitting element package shown. Fig.12 yes Fig.11a and Fig.11b The circuit diagram of the light emitting element package is shown.

[0143] Reference Fig.11a , Fig.11b and Fig.12, the light emitting element package 110D includes a printed circuit board 11p and four light emitting elements 110 mounted in a 2×2 shape on the printed circuit board 11p. However, the number and arrangement of the light emitting element packages 110D are not limited thereto, and can be arranged in various matrix forms, such as 1×1, 3×3, 4×4, etc. As described above, each light emitting element 110 has a structure in which the first epitaxial stack to the third epitaxial stack are stacked in a vertical direction. Accordingly, the first epitaxial stack to the third epitaxial stack correspond to each light emitting diode. For example, the first epitaxial stack to the third epitaxial stack can correspond to a first light emitting diode that emits red light, a second light emitting diode that emits green light, and a third light emitting diode that emits blue light, respectively.

[0144] First, refer to Fig.12 In order to drive four light-emitting elements, the first scan wiring SC1, the second scan wiring SC2, the third scan wiring SC3, the fourth scan wiring SC4, the fifth scan wiring SC5, the sixth scan wiring SC6 and the first data wiring DT1 and the second data wiring DT2 are connected to the four light-emitting elements. If the four light-emitting elements are called the first light-emitting element 110p, the second light-emitting element 110q, the third light-emitting element 110r, and the fourth light-emitting element 110s, the first light-emitting element 110p is connected to the first scan wiring SC1, the second scan wiring SC2, the third scan wiring SC3, and the first data wiring DT1, the second light-emitting element 110q is connected to the first scan wiring SC1, the second scan wiring SC2, the third scan wiring SC3, and the second data wiring DT2. The third light-emitting element 110r is connected to the fourth scan wiring SC4, the fifth scan wiring SC5, the sixth scan wiring SC6, and the first data wiring DT1, and the fourth light-emitting element 110s is connected to the fourth scan wiring SC4, the fifth scan wiring SC5, the sixth scan wiring SC6, and the second data wiring DT2.

[0145] The three light-emitting diodes respectively included in the first light-emitting element 110p, the second light-emitting element 110q, the third light-emitting element 110r, and the fourth light-emitting element 110s selectively emit light corresponding to the data signal input through the data wiring when the scan signal is supplied through the scan wiring. Each diode is connected between the scan wiring and the data wiring, and when a voltage above the threshold voltage is applied between the p-type semiconductor layer and the n-type semiconductor layer, it emits light with a brightness corresponding to the magnitude of the applied voltage. That is, the light emission of each light-emitting diode can be controlled by adjusting the voltage of the scan signal applied through the scan wiring and / or the data signal applied through the data wiring. As an example, during each frame period, each light-emitting diode emits light with a brightness corresponding to the received data signal. The light-emitting diode that receives the data signal corresponding to the black brightness does not emit light during the corresponding frame period, thereby displaying black.

[0146] In an embodiment of the present invention, the first light emitting element 110p, the second light emitting element 110q, the third light emitting element 110r, and the fourth light emitting element 110s may be driven individually by providing six scan wirings and two data wirings as described above.

[0147] To this end, the light emitting element is mounted at a corresponding position on the printed circuit board 11p. Fig.11a and Fig.11b , upper electrodes 11pa are provided at positions corresponding to the respective light emitting elements 110 on the front surface of the printed circuit board 11p. That is, one light emitting element 110 has four protruding electrodes bp, and four upper electrodes 11pa are provided on the printed circuit board 11p for one light emitting element 110. The four protruding electrodes bp of each light emitting element 110 are overlapped and connected with the four upper electrodes 11pa in a one-to-one manner.

[0148] In one embodiment of the present invention, the first to third bump electrodes of the first to fourth bump electrodes of the first light emitting element 110p are connected to the first to third scan wirings, respectively, and the fourth bump electrode is connected to the first data wiring. The first to third bump electrodes of the first to fourth bump electrodes of the second light emitting element 110q are connected to the first to third scan wirings, respectively, and the fourth bump electrode is connected to the second data wiring. The first to third bump electrodes of the first to fourth bump electrodes of the third light emitting element 110r are connected to the fourth to sixth scan wirings, respectively, and the fourth bump electrode is connected to the first data wiring. The first to third bump electrodes of the first to fourth bump electrodes of the fourth light emitting element 110s are connected to the fourth to sixth scan wirings, respectively, and the fourth bump electrode is connected to the second data wiring.

[0149] A total of eight lower electrodes are arranged on the back side of the printed circuit board 11p. The eight lower electrodes correspond to first to sixth scan pads for supplying scan signals to first to sixth scan wirings and first and second data pads for supplying data signals to first and second data wirings. For example, if the eight lower electrodes formed on the back side of the printed circuit board 11p are called the first lower electrode 11pc_1, the second lower electrode 11pc_2, the third lower electrode 11pc_3, the fourth lower electrode 11pc_4, the fifth lower electrode 11pc_5, the sixth lower electrode 11pc_6, the seventh lower electrode 11pc_7, and the eighth lower electrode 11pc_8, then the first lower electrode 11pc_1, the second lower electrode 11pc_2, the third lower electrode 11pc_3, the fourth lower electrode 11pc_4, the fifth lower electrode 11pc_5, and the sixth lower electrode 11pc_6 correspond to the first scanning pad to the sixth scanning pad, and the seventh lower electrode 11pc_7 and the eighth lower electrode 11pc_8 correspond to the first data pad and the second data pad. However, the arrangement and order of the first to sixth scan pads, the first data pad and the second data pad are not limited thereto, and may be arranged in various forms and areas on the back side of the printed circuit board 11p, and their order may also be set differently therefrom.

[0150] In one embodiment of the present invention, the distance between two adjacent lower electrodes may be greater than the distance between two adjacent upper electrodes. When forming a light-emitting element package, the lower electrode of the printed circuit board may function as a connection electrode for electrical connection with other electronic components when the light-emitting element package is mounted on other electronic components. Therefore, by forming the interval between the two adjacent lower electrodes wider, the light-emitting element package can be more easily mounted on other electronic components.

[0151] As described above, the light emitting element package according to one embodiment of the present invention can use a printed circuit board with a simple structure, and it is easy to mount the light emitting elements that can be driven individually on the printed circuit board. In addition, when driving four light emitting elements, since only eight input terminals (i.e., eight lower electrodes) can be provided, multiple light emitting elements can be driven by a simple structure.

[0152] According to an embodiment of the present invention, it can be applied to different devices in various forms as follows: using a single light emitting element package as a light source, or mounting multiple light emitting element packages on a base substrate again and modularizing the modules and using the modules as light sources, etc. Devices using (multiple) light emitting element packages can include display devices, living lighting devices, vehicle lighting (vehicle headlights, lighting lamps, taillights), various decorative lighting devices, etc.

[0153] Fig.13This is a schematic cross-sectional view showing a state in which a light source module is manufactured by mounting a plurality of light emitting element packages 110D on a base substrate 11 b in order to be applied to a display device, a vehicle lighting device, or the like.

[0154] Reference Fig.13 A base substrate 11b having wiring formed thereon may be prepared, and a plurality of light emitting element packages 110D may be mounted on the base substrate 11b. The base substrate 11b may be flexible or inflexible.

[0155] The wiring on the base substrate 11b is arranged to correspond to the lower surface electrode of the light emitting element package 110D. The wiring on the base substrate 11b can be connected to the lower surface electrode of the light emitting element package through the connecting electrode 11s. In one embodiment of the present invention, the connecting electrode 11s can be arranged in the form of solder.

[0156] like Fig.13 As shown, when light emitting element packages are mounted on a base substrate, if a defect occurs in one of the light emitting element packages, it is possible to easily perform repairs by replacing only the light emitting element package with a good one.

[0157] Fig.14 is a plan view conceptually illustrating a case where a light emitting element package according to an embodiment of the present invention is applied to a display device, Fig.15 It is an enlarged image Fig.14 Floor plan of the P1 section.

[0158] Reference Fig.14 and Fig.15 The light emitting element according to an embodiment of the present invention can be used as a pixel in a display device capable of displaying multiple colors. A plurality of light emitting elements can be mounted on a base substrate in the form of the light emitting element package 110D described above.

[0159] The display device 100 according to an embodiment of the present invention displays any visual information, such as text, video, photo, two-dimensional or three-dimensional image, etc.

[0160] The display device 100 can be configured in various shapes, such as a closed polygon including straight lines such as a rectangle, a circle including curved lines, an ellipse, etc., a semicircle including straight lines and curved lines, a semiellipse, etc. In one embodiment of the present invention, the display device is configured in a rectangular shape.

[0161] The display device 100 has a plurality of pixels for displaying an image. Each pixel as the minimum unit for displaying an image can be realized by a light-emitting element. Therefore, in this embodiment, each pixel is represented by 110. Each pixel 110 may include a light-emitting element of the above structure and emit white light and / or color light.

[0162] In one embodiment of the present invention, each pixel includes a first pixel 110 emitting red light. R , a second pixel 110 emitting green light G , a third pixel 110 emitting blue light B The first pixel 110 R , the second pixel 110 G , the third pixel 110 B The first to third epitaxial stacks may correspond to the above-mentioned light emitting elements, respectively.

[0163] First pixel 110 R , the second pixel 110 G , the third pixel 110 B The emitted light is not limited to this, and at least two pixels may emit light of the same color, or may emit light of a different color from the above colors such as yellow, magenta, or cyan.

[0164] The pixels 110 are arranged in rows and columns. Here, the pixels 110 are arranged in rows and columns. It does not mean that the pixels 110 are exactly arranged in a row or column. The local position can be changed as follows: the whole is arranged in a row or column but arranged in a zigzag shape.

[0165] According to this embodiment, it is possible to easily manufacture lighting devices of various sizes by simply mounting a plurality of light-emitting element packages on a base substrate. For example, a large-area display device can be easily manufactured using a plurality of light-emitting element packages. Furthermore, in the case where the base substrate or the printed circuit board is flexible, the display device can also be flexible, so it is possible to easily manufacture display devices of various forms, such as a rollable display device, a foldable display device, a curved display device, etc.

[0166] Although the above description is made with reference to the preferred embodiments of the present invention, it should be understood that any person skilled in the art or a person with basic knowledge in the technical field can make various modifications and changes to the present invention without departing from the scope of the idea and technical field of the present invention as recorded in the claims.

[0167] Therefore, the technical scope of the present invention is not limited to the contents specifically described in the detailed description in the specification, but should be determined by the claims.

Claims

1. A light emitting element package, comprising: a printed circuit board having a front side and a back side; at least one light-emitting element, disposed on the front surface and emitting light in a direction toward which the front surface faces; as well as A molding layer is disposed on the printed circuit board and surrounds the light emitting element. Wherein, the light emitting element comprises: A light emitting structure is arranged on the printed circuit board; A substrate, disposed on the light emitting structure; and A plurality of protruding electrodes are arranged between the light emitting structure and the printed circuit board, The mold layer covers the upper surface of the substrate, and a fine concavo-convex portion is provided on the surface exposed to the outside of the mold layer. The black mold layer is filled between the light emitting element and the printed circuit board.

2. The light emitting element package according to claim 1, wherein: The fine concavoconvex part is formed by at least one of plasma treatment, micro sandblasting, pattern transfer, dry grinding, and wet etching.

3. The light emitting element package according to claim 2, wherein: The molding layer has a substantially flat upper surface.

4. The light emitting element package according to claim 3, wherein: The mold layer reflects, scatters or absorbs a portion of external light.

5. The light emitting element package according to claim 4, wherein: The molding layer fills at least a portion between the light emitting structure and the printed circuit board.

6. The light emitting element package according to claim 5, wherein: The mold layer has an external light reflectivity, an external light scattering rate, or an external light absorption rate of 50% or more.

7. The light emitting element package according to claim 1, wherein: The printed circuit board includes a plurality of upper electrodes arranged on the front side, a plurality of lower electrodes arranged on the back side, and through-hole electrodes connecting the plurality of upper electrodes and the plurality of lower electrodes, and the plurality of protruding electrodes are respectively connected to corresponding upper electrodes among the plurality of upper electrodes.

8. The light emitting element package according to claim 7, wherein: A distance between two adjacent lower electrodes among the plurality of lower electrodes is greater than a distance between two adjacent upper electrodes among the plurality of upper electrodes.

9. The light emitting element package according to claim 7, wherein: The light emitting element is provided in plurality.

10. The light emitting element package according to claim 9, wherein: The light emitting elements are arranged in four, and the light emitting structure of each of the light emitting elements comprises: a plurality of epitaxial stacks which are sequentially stacked on the substrate and emit light of different wavelength bands, and the light emitting regions overlap with each other.

11. The light emitting element package according to claim 10, wherein: The plurality of epitaxial stacks include: a first epitaxial stack that emits a first light; a second epitaxial stack disposed on the first epitaxial stack and emitting a second light having a wavelength band different from that of the first light; and The third epitaxial stack is disposed on the second epitaxial stack and emits a third light having a wavelength band different from those of the first light and the second light.

12. The light emitting element package according to claim 11, wherein: The first to third epitaxial stacks each include: p-type semiconductor layer; n-type semiconductor layer; and The active layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer.

13. The light emitting element package according to claim 12, wherein: The raised electrode comprises: a first protruding electrode connected to the p-type semiconductor layer of the first epitaxial stack; a second raised electrode connected to the p-type semiconductor layer of the second epitaxial stack; a third protruding electrode connected to the p-type semiconductor layer of the third epitaxial stack; and The fourth protruding electrode is connected to the n-type semiconductor layer of the first epitaxial stack to the third epitaxial stack.

14. The light emitting element package according to claim 10, wherein: The light emitting elements include first to fourth light emitting elements, The lower electrode includes first to sixth scan pads, a first data pad and a second data pad, The first light emitting element is connected to the first scanning pad to the third scanning pad and the first data pad, The second light emitting element is connected to the first to third scan pads and the second data pad, The third light emitting element is connected to the fourth to sixth scanning pads and the first data pad, The fourth light emitting element is connected to the fourth to sixth scan pads and the second data pad.

15. The light emitting element package according to claim 14, wherein: In each light emitting element, the bump electrodes include first to fourth bump electrodes, first to third scan signals are applied to the first to third bump electrodes, and a data signal is applied to the fourth bump electrode.

16. The light emitting element package according to claim 1, wherein: The molding layer is formed using a vacuum lamination method.

17. A display device comprising: Basic substrate; as well as At least one light emitting element package according to claim 1 is disposed on the base substrate.

18. A lighting device, comprising: Basic substrate; as well as At least one light emitting element package according to claim 1 is disposed on the base substrate.

19. A method for manufacturing a light emitting element package, comprising the following steps: forming a light emitting element; Arranging the light-emitting element on a printed circuit board; forming a molding layer on the printed circuit board by vacuum lamination in such a manner as to cover the light emitting element; processing a surface exposed to the outside of the mold layer to form fine concavoconvex portions on the surface of the mold layer; cutting the printed circuit board and the molding layer to form a light emitting element package, wherein the molding layer covers the upper surface of the printed circuit board and includes a material that reflects, scatters or absorbs a portion of external light, The black mold layer is filled between the light emitting element and the printed circuit board.

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