Mask, method of manufacturing mask, and method of manufacturing display device using mask

CN113643965BActive Publication Date: 2026-08-07SAMSUNG DISPLAY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SAMSUNG DISPLAY CO LTD
Filing Date
2020-12-08
Publication Date
2026-08-07

AI Technical Summary

Technical Problem

然而,随着作为共同层的所述阴极电极分为所述第一工艺以及所述第二工艺而形成,分别需要所述第一工艺以及所述第二工艺的掩模,并且工艺的生产性降低

Benefits of technology

[0029]然而,本发明的效果不限于上述的效果,并且可以在不脱离本发明的思想和范围的情况下进行各种扩展。

✦ Generated by Eureka AI based on patent content.

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Abstract

Disclosed are a mask, a method of manufacturing the mask, and a method of manufacturing a display device using the mask, in which the mask includes a first opening portion, a first shielding portion surrounding the first opening portion, a second shielding portion disposed between the first opening portion and the first shielding portion and including a plurality of slits extending from the first opening portion toward the first shielding portion, and a third shielding portion disposed between the first opening portion and the second shielding portion and connected with the slits.
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Description

Technical Field

[0001] This invention relates to a mask, a method for manufacturing the mask, and a method for manufacturing a display device using the mask. Background Technology

[0002] A display device may include multiple pixels, each of which may include an anode electrode, a light-emitting layer disposed on the anode electrode, and a cathode electrode disposed on the light-emitting layer. In this case, the cathode electrode may be implemented as a single-plate electrode. For example, the cathode electrode may be formed integrally on the light-emitting layer. Typically, the display device may have a cuboid shape. In order to display images not only on the front and corner portions of the display device, but also on the curved corner portions, it is necessary to form the pixels at the corner portions as well. Accordingly, a first process is performed to form the cathode electrode on the front and corner portions, and a second process is performed immediately following the first process to form the cathode electrode at the corner portions. However, since the cathode electrode, which is a common layer, is formed separately by the first process and the second process, masks for the first process and the second process are required respectively, and the productivity of the process is reduced. Summary of the Invention

[0003] One object of the present invention is to provide a mask that can improve the productivity of a process.

[0004] Another object of the present invention is to provide a method for manufacturing the mask.

[0005] Another object of the present invention is to provide a method for manufacturing a display device using the mask.

[0006] However, the purpose of this invention is not limited to the above-described purpose, and various extensions can be made without departing from the spirit and scope of this invention.

[0007] To achieve the above-described objective of the present invention, a mask according to an embodiment of the present invention may include: a first opening; a first shielding portion surrounding the first opening; a second shielding portion disposed between the first opening and the first shielding portion, and including a plurality of slits extending from the first opening toward the first shielding portion; and a third shielding portion disposed between the first opening and the second shielding portion, and connected to the slits.

[0008] According to one embodiment, the thickness of the third shielding portion may be less than the thickness of the second shielding portion.

[0009] According to one embodiment, the upper surface of the third shielding portion may be at the same height as the upper surface of the second shielding portion.

[0010] According to one embodiment, the thickness of the third shielding portion may be less than the width of the third shielding portion.

[0011] According to one embodiment, the third shielding portion may be in the shape of an arc on a plane.

[0012] According to one embodiment, each of the plurality of slits may be trapezoidal in shape on a plane.

[0013] According to one embodiment, the plurality of slits may be spaced apart from each other.

[0014] According to one embodiment, the first opening may have a rectangular shape with rounded corners, and the second shielding portion may be arranged between the corner of the first opening and the first shielding portion.

[0015] According to one embodiment, it may further include: a second opening disposed between the side of the first opening and the first shielding portion.

[0016] To achieve another objective of the present invention described above, a method for manufacturing a mask according to an embodiment of the present invention may include the following steps: preparing a base layer defining a first opening region, a first shielding region surrounding the first opening region, a second shielding region disposed between the first opening region and the first shielding region, and a third shielding region disposed between the first opening region and the second shielding region; removing a portion of the base layer that overlaps with the third shielding region to form a third shielding portion; removing the portion of the base layer that overlaps with the first opening region to form a first opening portion; and forming a second shielding portion comprising a plurality of slits extending from the first opening region toward the first shielding region in the portion of the base layer that overlaps with the second shielding region.

[0017] According to one embodiment, in the step of forming the third shielding portion, a portion of the lower part of the area of ​​the base layer that overlaps with the third shielding area may be removed.

[0018] According to one embodiment, the upper surface of the third shielding portion may be at the same height as the upper surface of the second shielding portion.

[0019] According to one embodiment, the thickness of the third shielding portion may be less than the width of the third shielding portion.

[0020] According to one embodiment, the third shielding portion may be in the shape of an arc on a plane.

[0021] According to one embodiment, each of the plurality of slits may be trapezoidal in shape on a plane.

[0022] According to one embodiment, the plurality of slits may be spaced apart from each other.

[0023] According to one embodiment, the first opening may have a rectangular shape with rounded corners, and the second shielding portion may be arranged between the corner of the first opening and the first shielding portion corresponding to the first shielding area.

[0024] According to one embodiment, the method may further include the step of forming a second opening between the side of the first opening and the first shielding portion.

[0025] To achieve another objective of the present invention described above, a method for manufacturing a display device using a mask according to an embodiment of the present invention may include the following steps: arranging a substrate for deposition facing a deposition source and placing a mask therebetween; emitting a deposition material from the deposition source; and forming a deposition material pattern on the substrate for deposition, wherein the mask may include: a first opening; a first shielding portion surrounding the first opening; a second shielding portion disposed between the first opening and the first shielding portion, and including a plurality of slits extending from the first opening toward the first shielding portion; and a third shielding portion disposed between the first opening and the second shielding portion, and connected to the slits.

[0026] According to one embodiment, the mask may further include: a second opening disposed between the side of the first opening and the first shielding portion, wherein the deposition target substrate may include: a planar portion arranged corresponding to the first opening; a first curved portion arranged corresponding to the second opening; and a second curved portion arranged corresponding to the second shielding portion, wherein the deposition material pattern may be formed simultaneously on the planar portion, the first curved portion, and the second curved portion.

[0027] According to one embodiment, the thickness of the region of the deposited material pattern that overlaps with the third shielding portion may be less than the thickness of the region of the deposited material pattern that overlaps with the first opening portion.

[0028] A mask according to an embodiment of the present invention may include: a first opening; a second shielding portion including a plurality of slits; and a third shielding portion disposed between the first opening and the second shielding portion. The third shielding portion may be connected to the slits, thereby maintaining the shape of the slits. Furthermore, the third shielding portion may have a thickness thinner than both the first and second shielding portions, thereby enabling the simultaneous formation of a deposited material pattern disposed on the substrate to be deposited.

[0029] However, the effects of the present invention are not limited to those described above, and various extensions can be made without departing from the spirit and scope of the present invention. Attached Figure Description

[0030] Figure 1 This is a diagram illustrating an example of forming a deposited material pattern on a substrate using a mask according to an embodiment of the present invention.

[0031] Figure 2 This is a plan view used to illustrate a mask according to an embodiment of the present invention.

[0032] Figure 3 It is magnification Figure 2 An enlarged view of region A.

[0033] Figure 4 It is along Figure 2 A sectional view taken along line I-I'.

[0034] Figures 5 to 8 It is used to explain the manufacturing process. Figure 2 Plan view and sectional view of the masking method.

[0035] Figure 9 It shows the use of Figure 2 A three-dimensional image of a display device manufactured using a mask, which is in a curved state.

[0036] Figure 10 It is shown Figure 9 A cross-sectional view of the display device in a bent state.

[0037] Figure 11 It is shown that includes Figure 9 A plan view of the substrate for the deposition of the display device in an unfolded state.

[0038] Figure 12 It is magnification Figure 11 A magnified view of region B.

[0039] Figure 13 as well as Figure 14 This is a cross-sectional view used to illustrate a method of forming a pattern of deposited material on a substrate using a mask.

[0040] Explanation of reference numerals in the attached figures:

[0041] 100: Mask; 200: Deposition target substrate

[0042] 300: Sediment source; 110: First opening.

[0043] 120: Second opening 130: First shielding section

[0044] 140: Second Shielding Section 150: Third Shielding Section

[0045] 140a: Slit 100': Base layer

[0046] DM: Deposit material; DMP: Deposit material pattern

[0047] 1300a: Display block; 1300b: Opening

[0048] 1000: Display device 10: Front part

[0049] 20: Corner / Edge 30: Corner / Round Detailed Implementation

[0050] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The same reference numerals will be used for the same constituent elements in the drawings, and repeated descriptions of the same constituent elements will be omitted.

[0051] Figure 1 This is a diagram illustrating an example of forming a deposited material pattern on a substrate using a mask according to an embodiment of the present invention.

[0052] Reference Figure 1 The deposited material pattern (DMP) can be formed on one side of the deposition target substrate 200. Specifically, a deposition source 300 for emitting the deposited material (DM) and a mask 100 for selectively allowing the deposited material (DM) to pass through can be arranged inside the cavity CB, and the deposition target substrate 200 can be arranged to face the deposition source 300 and place the mask 100 between them.

[0053] The mask 100 may include at least one opening and at least one shielding portion. For example, the mask 100 may be formed by processing a base layer, and the portion of the base layer through which it is formed may be defined as the opening, while the portion where the base layer remains may be defined as the shielding portion.

[0054] In one embodiment, the deposition target substrate 200 may be included in a display device (e.g., Figure 9 as well as Figure 10 The display device 1000 is configured such that the deposition target substrate 200 can be transferred into the cavity CB by means of the transfer unit, and can be arranged by alignment keys formed on the deposition target substrate 200.

[0055] The deposition source 300 can vaporize the deposited material DM. For example, the deposition source 300 can be a deposition source for forming a metal film for a cathode electrode. In this case, the deposited material DM can be a metal, alloy, or the like used to form a metal film for a cathode electrode. For example, the deposited material DM can include silver (Ag), silver-containing alloys, molybdenum (Mo), molybdenum-containing alloys, aluminum (Al), aluminum-containing alloys, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), nickel (Ni), chromium (Cr), chromium nitride (CrN), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), indium tin oxide (ITO), indium zinc oxide (IZO), etc. The deposition source 300 can heat the deposited material DM using a heater, and the heated deposited material DM can vaporize. The vaporized deposited material DM can condense on the substrate 200 to form a metal film.

[0056] Figure 2 This is a plan view illustrating a mask according to an embodiment of the present invention. Figure 3 It is magnification Figure 2 A magnified view of region A. Figure 4 It is along Figure 2 A sectional view taken along line I-I'.

[0057] Reference Figure 2 as well as Figure 3 The mask 100 may include a first opening 110, a second opening 120, a first shielding portion 130, a second shielding portion 140, and a third shielding portion 150.

[0058] The first opening 110 may be disposed in the central region of the mask 100. In one embodiment, the first opening 110 may have a rectangular shape with rounded corners. Accordingly, the first opening 110 may have at least one side 110a and at least one corner 110b. For example, the first opening 110 may have four side 110a and four corners 110b. The first opening 110 is through-hole and allows the deposited material DM to pass through.

[0059] The second opening 120 may be adjacent to the side surface 110a of the first opening 110. For example, the mask 100 may include four second openings 120 respectively adjacent to four of the four side surfaces 110a of the first opening 110. The second openings 120 are through-holes and allow the deposited material DM to pass through.

[0060] The first shielding portion 130 may be arranged to surround the first opening 110 and the second opening 120 in a plane. In one embodiment, the first shielding portion 130 may have a rectangular shape with right angles. The first shielding portion 130 may be arranged at the outermost periphery of the mask 100 to maintain the shape of the mask 100. The first shielding portion 130 is not through-hole and can prevent the deposited material DM from passing through.

[0061] The second shielding portion 140 may be arranged between the corner 110b of the first opening 110 and the first shielding portion 130. For example, the mask 100 may include four second shielding portions 140 adjacent to the four corners 110b of the first opening 110.

[0062] In one embodiment, the second shielding portion 140 may include a plurality of slits 140a. The slits 140a may extend from the first opening 110 toward the first shielding portion 130. Accordingly, each of the slits 140a may be trapezoidal in shape in a plane.

[0063] Furthermore, in one embodiment, the slits 140a may be spaced apart from each other. Accordingly, a plurality of openings 140b may be defined between the plurality of slits 140a. The slits 140a are not through-holes and can prevent the deposited material DM from passing through, while the openings 140b are through-holes and can allow the deposited material DM to pass through.

[0064] The third shielding portion 150 may be arranged between the corner 110b of the first opening 110 and the second shielding portion 140. For example, the mask 100 may include four third shielding portions 150 adjacent to the four corners 110b of the first opening 110.

[0065] In one embodiment, the third shielding portion 150 may be connected to the slits 140a. For example, one end of each of the slits 140a may be connected to the first shielding portion 130, and the other end of each of the slits 140a may be connected to the third shielding portion 150. The third shielding portion 150 connects the other end of each of the slits 140a, thereby maintaining the shape of the slits 140a. For this purpose, the third shielding portion 150 may be arc-shaped in a plane. For example, the third shielding portion 150 may have the same shape as the corner 110b of the first opening 110.

[0066] Reference Figure 2 , Figure 3 as well as Figure 4The thickness 150D of the third shielding portion 150 can be less than the thickness 140D of the second shielding portion 140. Here, the thickness 140D of the second shielding portion 140 can also mean the thickness of each of the slits 140a, or the thickness of each of the openings 140b. For example, the mask 100 may include an upper surface and a lower surface opposite to the upper surface. The upper surface of the mask 100 may face the deposition source 300, and the lower surface of the mask 100 may face the deposition target substrate 200. In this case, the upper surface 150T of the third shielding portion 150 may be at the same height as the upper surface 140T of the second shielding portion 140. Conversely, the lower surface 150B of the third shielding portion 150 may be at a height higher than the lower surface 140B of the second shielding portion 140. Accordingly, the third shielding portion 150 may have a thickness thinner than the first shielding portion 130 and the second shielding portion 140. Therefore, the deposited material DM can reach the deposition target substrate 200 overlapping with the third shielding portion 150. Furthermore, the thickness 150D of the third shielding portion 150 may be smaller than the width 150W of the third shielding portion 150. The thickness 150D and the width 150W of the third shielding portion 150 are adjusted accordingly, so that the deposited material DM can reach the deposition target substrate 200 overlapping with the third shielding portion 150.

[0067] Figures 5 to 8 It is used to explain the manufacturing process. Figure 2 Plan view and sectional view of the masking method.

[0068] Reference Figure 2 as well as Figure 5 To manufacture the mask 100, a base layer 100' may be prepared, defining a first opening region 110', a second opening region 120', a first shielding region 130', a second shielding region 140', and a third shielding region 150'. For example, the second opening region 120' may be adjacent to the side 110'a of the first opening region 110'. The first shielding region 130' may surround the first opening region 110'. The second shielding region 140' may be arranged between the corner 110'b of the first opening region 110' and the first shielding region 130'. The third shielding region 150' may be arranged between the corner 110'b of the first opening region 110' and the second shielding region 140'.

[0069] Reference Figure 2 as well as Figure 6A portion of the base layer 100' overlapping with the third shielding region 150' can be removed. Accordingly, a third shielding portion 150 can be formed. In one embodiment, a portion of the lower part of the base layer 100' overlapping with the third shielding region 150' can be removed. For example, a laser can be irradiated toward the lower surface of the base layer 100' overlapping with the third shielding region 150', thereby removing a portion of the lower part of the base layer 100'. Accordingly, the upper surface of the third shielding portion 150 can be at the same height as the upper surface of the base layer 100'. Conversely, the lower surface of the third shielding portion 150 can be at a height higher than the lower surface of the base layer 100'.

[0070] Reference Figure 2 as well as Figure 7 The base layer 100' overlapping with the first opening region 110' can be removed. For example, a laser can be irradiated toward the upper (or lower) surface of the base layer 100' overlapping with the first opening region 110', thereby completely removing the base layer 100' overlapping with the first opening region 110'. Accordingly, the first opening 110 can be formed.

[0071] Reference Figure 2 as well as Figure 8 A plurality of slits 140a may be formed in the base layer 100' that overlaps with the second shielding region 140'. For example, a laser may be irradiated toward the upper (or lower) surface of the base layer 100' that overlaps with the opening 140b, thereby forming a plurality of slits 140a in the base layer 100' that overlaps with the second shielding region 140'. Accordingly, a first shielding portion 130 and a second shielding portion 140 may be formed.

[0072] Figure 9 It shows the use of Figure 2 A three-dimensional image of a display device manufactured using a mask, in a curved state. Figure 10 It is shown Figure 9 A cross-sectional view of the display device in a bent state. For example, Figure 10 It can be along Figure 9 A sectional view taken from line II-II'.

[0073] Reference Figure 9 as well as Figure 10 At least a portion of the edge of the display device 1000 manufactured using the mask 100 can be bent. For example, as Figure 9 As shown, the entire edge of the display device 1000 can be bent in the rearward direction. Accordingly, the display device 1000 may include a centrally located front portion 10, corner portions 20, and corner portions 30.

[0074] Specifically, when the display device 1000 is bent, the front portion 10 may not be bent. Accordingly, the front portion 10 may have a planar shape.

[0075] The corner portion 20 may be adjacent to the side of the front portion 10. For example, the display device 1000 may include four corner portions 20 that are adjacent to four side portions respectively.

[0076] When the display device 1000 is bent, the corner portion 20 can be bent. For example, the corner portion 20 can have a two-dimensional curved surface shape. Here, the two-dimensional curved surface shape can be a shape in which a plane is bent in one direction. For example, the corner portion 20 can be bent from the front portion 10 toward the corner portion 20.

[0077] The corner portion 30 may be adjacent to the corner of the front portion 10 and the edge portion 20. The corner portion 30 may be arranged between the edge portions 20 that are perpendicular to each other. For example, the display device 1000 may include four corner portions 30 that are respectively adjacent to four corners.

[0078] When the display device 1000 is bent, the corner portion 30 can be bent. For example, the corner portion 30 can have a three-dimensional curved surface shape. Here, the three-dimensional curved surface shape can be a shape in which a plane is bent in two or more directions. For example, the corner portion 30 can be bent in multiple directions between two mutually perpendicular directions.

[0079] The display device 1000 can display images on the front portion 10, the corner portions 20, and the bend portions 30. Therefore, the blind spots of the display device 1000 can be reduced, and the display device 1000 can provide a more enhanced aesthetic appeal.

[0080] like Figure 10 As shown, the display device 1000 may include the deposition substrate 200, the deposited material pattern DMP, the window WIN, and the frame FRM. The deposited material pattern DMP may be disposed on the deposition substrate 200. The window WIN may protect the deposition substrate 200 and the deposited material pattern DMP from external impacts. The deposition substrate 200, the deposited material pattern DMP, and the window WIN may be bent in a manner corresponding to the display device 1000. The frame FRM may be disposed at the ends of the deposition substrate 200, the deposited material pattern DMP, and the window WIN. The frame FRM may support the deposition substrate 200, the deposited material pattern DMP, and the window WIN.

[0081] Figure 11It is shown that includes Figure 9 A plan view of the substrate for the deposition of the display device in an unfolded state. Figure 12 It is magnification Figure 11 A magnified view of region B.

[0082] Reference Figure 11 as well as Figure 12 The deposition substrate 200 may include a centrally located planar portion 1100, a first curved portion 1200, and a second curved portion 1300. For example, the planar portion 1100 may correspond to the front portion 10 of the display device 1000, the first curved portion 1200 may correspond to the corner portion 20 of the display device 1000, and the second curved portion 1300 may correspond to the corner portion 30 of the display device 1000. To display images on the front portion 10, the corner portion 20, and the corner portion 30, the display device 1000 may be equipped with a plurality of pixel regions PXA in the planar portion 1100, the first curved portion 1200, and the second curved portion 1300. Each of the pixel regions PXA may be arranged with pixels (e.g., ...). Figure 14 PX).

[0083] In one embodiment, in order to form the deposited material pattern DMP on the deposition target substrate 200, the planar portion 1100 may be arranged corresponding to the first opening portion 110 of the mask 100, the first curved portion 1200 may be arranged corresponding to the second opening portion 120, and the second curved portion 1300 may be arranged corresponding to the second shielding portion 140.

[0084] When the display device 1000 is bent, the planar portion 1100 may remain unchanged. Accordingly, the planar portion 1100 may have a planar shape. In one embodiment, the planar portion 1100 may have a rectangular shape with rounded corners. Accordingly, the planar portion 1100 may include four sides 1100a and four corners 1100b.

[0085] The first curved portion 1200 may be adjacent to the side surface 1100a of the planar portion 1100. For example, the deposition target substrate 200 may include four first curved portions 1200 respectively adjacent to four side surfaces 1100a.

[0086] When the display device 1000 is bent, the first bent portion 1200 can be bent. For example, the first bent portion 1200 can have the two-dimensional curved surface shape. For example, the first bent portion 1200 can be bent from the flat portion 1100 toward the first bent portion 1200.

[0087] The second curved portion 1300 may be adjacent to the corner 1100b of the planar portion 1100 and the first curved portion 1200. The second curved portion 1300 may be arranged between the first curved portions 1200 that are perpendicular to each other. For example, the deposition target substrate 200 may include four second curved portions 1300 that are respectively adjacent to four corners 1100b.

[0088] When the display device 1000 is bent, the second bent portion 1300 can be bent. For example, the second bent portion 1300 can have the three-dimensional curved surface shape. For example, the second bent portion 1300 can be bent in multiple directions between two mutually perpendicular directions.

[0089] The second curved portion 1300 may include a plurality of display blocks 1300a. The display blocks 1300a may be spaced apart from each other and may extend from the corner 1100b of the planar portion 1100 along the edge of the second curved portion 1300. Accordingly, a plurality of openings 1300b may be defined between the display blocks 1300a.

[0090] In one embodiment, in order to form the deposited material pattern DMP on the deposition target substrate 200, the display block 1300a may be arranged corresponding to the opening 140b of the mask 100, and the opening 1300b of the second curved portion 1300 may be arranged corresponding to the slit 140a of the mask 100.

[0091] Figure 13 as well as Figure 14 This is a cross-sectional view used to illustrate a method of forming a pattern of deposited material on a substrate using a mask. For example, Figure 13 as well as Figure 14 It can simultaneously illustrate along Figure 3 Sectional view taken from section III-III' and along Figure 12 A sectional view taken from IV-IV'.

[0092] Reference Figure 1 , Figure 3 , Figure 12 as well as Figure 13The deposition target substrate 200 can be arranged to face the deposition source 300 and with the mask 100 placed between it. For example, as described above, the planar portion 1100 of the deposition target substrate 200 can be arranged to correspond to the first opening 110 of the mask 100, the first curved portion 1200 can be arranged to correspond to the second opening 120, and the second curved portion 1300 can be arranged to correspond to the second shielding portion 140. Accordingly, the deposition target substrate 200 can be arranged so that it does not overlap with the first shielding portion 130. In one embodiment, the deposition target substrate 200 can be arranged such that the area where the planar portion 1100 and the second curved portion 1300 meet overlaps with the third shielding portion 150. For example, the deposition target substrate 200 can be arranged such that the corner 1100b of the deposition target substrate 200 overlaps with the third shielding portion 150.

[0093] The deposition substrate 200 may include a support substrate SUB, a component layer TRL, a pixel definition film PDL, an anode electrode ANE, and a light-emitting layer EL. The support substrate SUB may include a glass substrate, a quartz substrate, a plastic substrate, etc. The component layer TRL may be disposed on the support substrate SUB. The component layer TRL may include multiple transistors. The anode electrode ANE may be disposed on the component layer TRL. The anode electrodes ANE may be disposed in the pixel region PXA and may be spaced apart from each other. The anode electrodes ANE may be electrically connected to the transistors. The pixel definition film PDL may be disposed on the component layer TRL, and an opening may be formed in the pixel definition film PDL to expose the upper surface of the anode electrode ANE. The opening in the pixel definition film PDL may be formed in the pixel region PXA. The light-emitting layer EL may be disposed within the opening in the pixel definition film PDL. For example, the light-emitting layer EL may be disposed in the pixel region PXA. The light-emitting layer EL may emit light according to a driving current applied via the anode electrode ANE and the deposited material pattern DMP.

[0094] Reference Figure 1 , Figure 2 , Figure 3 , Figure 11 as well as Figure 14The deposited material DM can be emitted from the deposition source 300. The deposited material DM passes through the opening of the mask 100, thereby condensing onto the deposition target substrate 200. Accordingly, the deposited material pattern DMP can be formed on the deposition target substrate 200. For example, the deposited material DM can be a metal, alloy, or the like used to form the metal film for the cathode electrode. Accordingly, the deposited material pattern DMP can be a cathode electrode for forming a pixel PX. For example, the pixel PX can include the anode electrode ANE, the deposited material pattern DMP serving as the cathode electrode, and a light-emitting layer EL disposed between the anode electrode ANE and the cathode electrode.

[0095] In one embodiment, as described above, the third shielding portion 150 may have a thinner thickness than the first shielding portion 130 and the second shielding portion 140. Accordingly, the deposited material DM can reach the deposition target substrate 200 overlapping with the third shielding portion 150. Therefore, the deposited material pattern DMP can also be formed on the deposition target substrate 200 overlapping with the third shielding portion 150, and the deposited material pattern DMP disposed on the planar portion 1100 and the deposited material pattern DMP disposed on the display block 1300a can be connected to each other. Therefore, the deposited material pattern DMP can be formed on the deposition target substrate 200 in a single process. In other words, the deposited material pattern disposed on the deposition target substrate can be formed simultaneously. Furthermore, since the third shielding portion 150 remains with a thinner thickness, the thickness of the deposited material pattern DMP in the area overlapping with the third shielding portion 150 can be smaller than the thickness of the deposited material pattern DMP in the area overlapping with the first opening portion 110.

[0096] According to an embodiment of the present invention, a mask may include a first opening, a second shielding portion including a plurality of slits, and a third shielding portion disposed between the first opening and the second shielding portion. The third shielding portion is connected to the slits, thereby maintaining the shape of the slits. Furthermore, the third shielding portion has a thickness thinner than the first shielding portion and the second shielding portion, thereby enabling the simultaneous formation of a deposited material pattern disposed on the substrate to be deposited.

[0097] As described above, the invention has been illustrated with reference to exemplary embodiments. However, those skilled in the art should understand that various modifications and alterations can be made without departing from the spirit and scope of the invention as set forth in the foregoing claims.

[0098] Industrial application potential

[0099] This invention can be applied to display devices and electronic devices including them. For example, it can be applied to high-definition smartphones, portable phones, smart panels, smartwatches, tablet computers, vehicle navigation systems, televisions, computer monitors, laptops, etc.

[0100] The above description refers to exemplary embodiments of the present invention. However, those skilled in the art should understand that various modifications and alterations can be made without departing from the spirit and scope of the present invention as set forth in the foregoing claims.

Claims

1. A mask, used for forming a deposited material pattern on a target substrate, comprising: First opening; A first shielding portion surrounds the first opening portion; The second shielding portion is disposed between the first opening portion and the first shielding portion, and includes a plurality of slits extending from the first opening portion toward the first shielding portion; as well as A third shielding portion is disposed between the first opening and the second shielding portion, and is connected to the slit. The thickness of the third shielding part is less than the thickness of the second shielding part.

2. The mask as described in claim 1, characterized in that, The upper surface of the third shielding part is at the same height as the upper surface of the second shielding part.

3. The mask as described in claim 1, characterized in that, The thickness of the third shielding part is less than the width of the third shielding part.

4. The mask as described in claim 1, characterized in that, The third shielding part is arc-shaped on the plane.

5. The mask as claimed in claim 1, characterized in that, Each of the plurality of slits is trapezoidal in shape in the plane.

6. The mask as claimed in claim 1, characterized in that, The multiple slits are spaced apart from each other.

7. The mask as claimed in claim 1, characterized in that, The first opening has a rectangular shape with rounded corners. The second shielding portion is arranged between the corner of the first opening and the first shielding portion.

8. The mask as claimed in claim 7, further comprising: The second opening is located between the side of the first opening and the first shielding portion.

9. A method for manufacturing a mask, comprising the steps of manufacturing a mask for forming a deposited material pattern on a target substrate: A base layer is prepared that defines a first opening area, a first shielding area surrounding the first opening area, a second shielding area arranged between the first opening area and the first shielding area, and a third shielding area arranged between the first opening area and the second shielding area. A portion of the area of ​​the base layer that overlaps with the third shielding area is removed to form the third shielding portion; The area of ​​the base layer that overlaps with the first opening area is removed to form the first opening. as well as A second shielding portion is formed in the area of ​​the base layer that overlaps with the second shielding area, comprising a plurality of slits extending from the first opening area toward the first shielding area. The thickness of the third shielding part is less than the thickness of the second shielding part.

10. The method for manufacturing a mask as described in claim 9, characterized in that, In the step of forming the third shielding portion, a portion of the lower part of the area of ​​the base layer that overlaps with the third shielding area is removed.

11. The method for manufacturing a mask as described in claim 9, characterized in that, The upper surface of the third shielding part is at the same height as the upper surface of the second shielding part.

12. The method for manufacturing a mask as described in claim 9, characterized in that, The thickness of the third shielding part is less than the width of the third shielding part.

13. The method for manufacturing a mask as described in claim 9, characterized in that, The third shielding part is arc-shaped on the plane.

14. The method for manufacturing a mask as described in claim 9, characterized in that, Each of the plurality of slits is trapezoidal in shape in the plane.

15. The method for manufacturing a mask as described in claim 9, characterized in that, The multiple slits are spaced apart from each other.

16. The method for manufacturing a mask as described in claim 9, characterized in that, The first opening has a rectangular shape with rounded corners. The second shielding portion is arranged between the corner of the first opening and the first shielding portion corresponding to the first shielding area.

17. The method for manufacturing a mask as described in claim 16, further comprising the following steps: A second opening is formed between the side of the first opening and the first shielding portion.

18. A method for manufacturing a display device, comprising the following steps: Arrange the substrates to be deposited facing the deposition source and place the mask between them; Ejection of sedimentary material from the sedimentation source; and A pattern of deposited material is formed on the substrate to which the deposition is to be performed. in, The mask is the mask as described in any one of claims 1 to 7.

19. The method for manufacturing a display device as claimed in claim 18, characterized in that, The mask also includes: The second opening is located between the side of the first opening and the first shielding portion.

20. The method for manufacturing a display device as claimed in claim 19, characterized in that, The substrate to be deposited includes: The planar portions are arranged corresponding to the first opening portion; The first curved portion is arranged corresponding to the second opening portion; and The second curved portion is arranged corresponding to the second shielding portion. The deposited material pattern is formed simultaneously on the planar portion, the first curved portion, and the second curved portion.

21. The method of manufacturing a display device as claimed in claim 20, characterized in that, The thickness of the area of ​​the deposited material pattern that overlaps with the third shielding portion is less than the thickness of the area of ​​the deposited material pattern that overlaps with the first opening portion.

Citation Information

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