Joining device and joining method

Abstract

The present application provides a bonding apparatus and a bonding method, which improve the bonding accuracy of a substrate. The bonding apparatus according to an embodiment includes a holding portion, a pressing portion, and a curvature adjustment portion. The holding portion is configured to adsorptively hold a substrate to be bonded. The pressing portion is configured to press the substrate against a central portion of the substrate adsorptively held by the holding portion, so as to protrude the central portion of the substrate. The curvature adjustment portion is configured to adjust the curvature of the substrate pressed by the pressing portion.

Description

Technical Field

[0001] This disclosure relates to a joining device and a joining method. Background Technology

[0002] Patent Document 1 discloses a method for initiating the bonding between a first substrate and a second substrate by pressing the center portion of a first substrate with a pushing member so that the center portion protrudes toward a second substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-153954 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for improving the bonding accuracy of substrates.

[0008] Solution for solving the problem

[0009] According to one aspect of this disclosure, a bonding apparatus includes a holding part, a pressing part, and a curvature adjustment part. The holding part is used to hold and adhere a substrate to be bonded. The pressing part presses the substrate in contact with the center portion of the substrate held by the holding part, causing the center portion of the substrate to protrude. The curvature adjustment part is used to adjust the curvature of the substrate pressed by the pressing part.

[0010] The effects of the invention

[0011] According to this disclosure, the bonding accuracy of the substrate can be improved. Attached Figure Description

[0012] Figure 1 This is a schematic diagram showing the structure of the joining system according to the first embodiment.

[0013] Figure 2 This is a schematic diagram showing the state of the first substrate and the second substrate before they are bonded together according to the first embodiment.

[0014] Figure 3 This is a schematic diagram showing the structure of the joining device according to the first embodiment.

[0015] Figure 4 This is a flowchart illustrating the joining process involved in the first embodiment.

[0016] Figure 5 This is a diagram showing the amount of displacement near the center of the first substrate according to the first embodiment.

[0017] Figure 6This is a diagram showing the extension near the center of the first substrate during the bonding process according to the first embodiment.

[0018] Figure 7 This is a schematic diagram showing the structure of the joining device according to the second embodiment.

[0019] Figure 8 This is a schematic diagram showing the structure of the joining device according to the third embodiment.

[0020] Figure 9 This is a schematic diagram showing the structure of the joining device according to the fourth embodiment.

[0021] Explanation of reference numerals in the attached figures

[0022] 1: Joining system; 41, 80, 81, 82: Joining device; 100, 300, 310, 320: First suction cup part; 101: Holding part; 102: Impactor (pressing part); 103: Air supply part (curvature adjustment part); 110d: Blowout hole (curvature adjustment part); 111: Suction cup; 112: Suction device; 201: Holding part (lower holding part); 301: Impactor (curvature adjustment part); 311: Suction device; 330: Temperature adjustment part; W1: First substrate (an example of a substrate); W2: Second substrate. Detailed Implementation

[0023] Hereinafter, the methods for implementing the joining device and joining method based on the present disclosure will be described in detail with reference to the accompanying drawings (hereinafter referred to as "Embodiments"). Furthermore, the joining device and joining method based on the present disclosure are not limited to this embodiment. Additionally, the various embodiments can be appropriately combined without causing contradictions in the processing content. Furthermore, in the following embodiments, the same reference numerals are used to mark the same parts, and repeated descriptions are omitted.

[0024] Furthermore, in the embodiments shown below, expressions such as "fixed," "orthogonal," "perpendicular," or "parallel" are sometimes used, but these expressions do not need to be strictly "fixed," "orthogonal," "perpendicular," or "parallel." That is, the above expressions, for example, allow for deviations in manufacturing precision, setting precision, etc.

[0025] Additionally, in the accompanying figures mentioned below, an orthogonal coordinate system is sometimes shown, defining mutually orthogonal X-axis, Y-axis, and Z-axis directions, with the positive Z-axis direction being the vertically upward direction, to facilitate understanding of the explanation. Furthermore, the direction of rotation about the vertical axis is sometimes referred to as the θ direction.

[0026] (First Implementation)

[0027] <Structure of the Joining System>

[0028] First, refer to Figure 1 and Figure 2 The structure of the joining system 1 according to the first embodiment will be explained. Figure 1 This is a schematic diagram showing the structure of the joining system 1 according to the first embodiment. Additionally, Figure 2 This is a schematic diagram showing the state of the first substrate W1 and the second substrate W2 before they are joined together according to the first embodiment.

[0029] Figure 1 The bonding system 1 shown forms an overlapping substrate T by bonding a first substrate W1 to a second substrate W2 (see reference). Figure 2 ).

[0030] The first substrate W1 and the second substrate W2 are single-crystal silicon wafers, on which multiple electronic circuits are formed. The diameters of the first substrate W1 and the second substrate W2 are approximately the same. Alternatively, one of the first substrate W1 and the second substrate W2 may be a substrate without any electronic circuits formed thereon.

[0031] Below, as Figure 2 As shown, the side of the first substrate W1 that is to be joined with the second substrate W2 is designated as "joining surface W1j", and the side opposite to the joining surface W1j is designated as "non-joining surface W1n". Similarly, the side of the second substrate W2 that is to be joined with the first substrate W1 is designated as "joining surface W2j", and the side opposite to the joining surface W2j is designated as "non-joining surface W2n".

[0032] like Figure 1 As shown, the joining system 1 includes an inlet / outlet station 2 and a processing station 3. The inlet / outlet station 2 is located on the negative X-axis side of the processing station 3 and is integrally connected to the processing station 3.

[0033] The loading / unloading station 2 includes a loading platform 10 and a transport area 20. The loading platform 10 has multiple loading plates 11. Each loading plate 11 holds boxes C1 to C4 that hold multiple (e.g., 25) substrates in a horizontal position. Box C1 can hold multiple first substrates W1, box C2 can hold multiple second substrates W2, and box C3 can hold multiple overlapping substrates T. Box C4 is, for example, a box for recycling defective substrates. Furthermore, the number of boxes C1 to C4 placed on the loading plate 11 is not limited to the number shown in the figure.

[0034] The transport area 20 is arranged adjacent to the positive X-axis side of the mounting table 10. A transport path 21 extending along the Y-axis and a transport device 22 capable of moving along the transport path 21 are provided in the transport area 20. The transport device 22 can move not only along the Y-axis but also along the X-axis and can rotate about the Z-axis. The transport device 22 transports the first substrate W1, the second substrate W2, and the overlapping substrate T between the boxes C1~C4 placed on the mounting plate 11 and the third processing block G3 of the processing station 3 (described later).

[0035] For example, processing station 3 is equipped with three processing blocks G1, G2, and G3. The first processing block G1 is located on the back side of processing station 3. Figure 1 (On the positive Y-axis side). Additionally, the second processing block G2 is positioned on the front side of processing station 3 (on the positive Y-axis side). Figure 1 The third processing block G3 is located on the side of the transfer in / out station 2 of the processing station 3 (on the negative Y-axis side). Figure 1 (the negative X-axis side).

[0036] A surface modification device 30 is provided in the first processing block G1 for modifying the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2. The surface modification device 30 modifies the bonding surfaces W1j and W2j to make them more hydrophilic by forming dangling bonds (suspended bonds) on the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 by plasma irradiation.

[0037] Specifically, in the surface modification apparatus 30, oxygen or nitrogen, which is used as a process gas, is stimulated under a reduced pressure atmosphere to plasmaize the process gas. Then, the oxygen or nitrogen ions are irradiated onto the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2, thereby modifying the bonding surfaces W1j and W2j through plasma treatment.

[0038] Furthermore, a surface hydrophilization device 40 is provided in the first processing block G1. The surface hydrophilization device 40, for example, uses pure water to hydrophilize the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2, and cleans the bonding surfaces W1j and W2j. Specifically, the surface hydrophilization device 40, for example, supplies pure water to the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by the rotating suction cup. As a result, the pure water supplied to the first substrate W1 or the second substrate W2 diffuses on the bonding surfaces W1j and W2j of the first substrate W1 or the second substrate W2, thus hydrophilizing the bonding surfaces W1j and W2j.

[0039] Here, an example is shown in which the surface modification device 30 and the surface hydrophilization device 40 are arranged in a horizontal arrangement. However, the surface hydrophilization device 40 may also be stacked on top of or below the surface modification device 30.

[0040] A bonding device 41 is provided in the second processing block G2. The bonding device 41 bonds the hydrophilized first substrate W1 to the second substrate W2 by intermolecular forces. The specific structure of the bonding device 41 will be described later.

[0041] A transport region 60 is formed in the area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transport device 61 is disposed in the transport region 60. The transport device 61 has, for example, a transport arm that can move freely in the vertical direction, the horizontal direction, and about the vertical axis. The transport device 61 moves within the transport region 60 to transport the first substrate W1, the second substrate W2, and the overlapping substrate T to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transport region 60.

[0042] Furthermore, the bonding system 1 includes a control device 70. The control device 70 controls the operation of the bonding system 1. The control device 70 is, for example, a computer, including a control unit and a storage unit (not shown). The control unit includes various circuits, a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc. The CPU of the microcomputer implements the control described later by reading and executing programs stored in the ROM. The storage unit is implemented, for example, by semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical disks.

[0043] Furthermore, the program can be recorded on a computer-readable recording medium and installed from that medium into the storage unit of the control device 70. Examples of computer-readable recording media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0044] <Jointing device>

[0045] Next, refer to Figure 3 The joining device 41 involved in the first embodiment will be explained. Figure 3 This is a schematic diagram showing the structure of the coupling device 41 according to the first embodiment.

[0046] The coupling device 41 includes a first suction cup portion 100 and a second suction cup portion 200.

[0047] The first suction cup 100 includes a holding part 101, an impactor 102 (an example of a pressing part), and an air supply part 103 (an example of a curvature adjustment part).

[0048] The holding part 101 is used to hold the first substrate W1 to be bonded. The holding part 101 holds the first substrate W1 from above. Specifically, the holding part 101 holds the first substrate W1 by adsorbing the non-bonding surface W1n of the first substrate W1.

[0049] The holding part 101 includes a main body 110, a suction cup 111, and a suction device 112. The main body 110 is, for example, circular. An insertion hole 110a, a receiving part 110b, a suction path 110c, and a blow-out hole 110d are formed in the main body 110.

[0050] An insertion hole 110a is formed in the center of the main body 110. The insertion hole 110a is formed along the vertical direction. The insertion hole 110a penetrates the main body 110. The pressing pin 120 of the impactor 102 is inserted into the insertion hole 110a.

[0051] The receiving portion 110b is formed with an opening on the lower surface of the main body 110. A suction cup 111 is housed within the receiving portion 110b. A suction path 110c is connected to the suction cup 111 housed within the receiving portion 110b. Specifically, one end of the suction path 110c is connected to the suction cup 111 housed within the receiving portion 110b. The other end of the suction path 110c is connected to the suction device 112 via a suction tube 130.

[0052] The receiving portion 110b and the suction path 110c are formed in the radial direction of the first substrate W1, that is, in the radial direction of the main body portion 110, at a position further outward than the insertion hole 110a. A plurality of receiving portions 110b and suction paths 110c are formed.

[0053] Multiple receiving portions 110b and suction paths 110c are formed along the circumference of the main body 110. In addition, the receiving portions 110b and suction paths 110c are arranged in two concentric circles with the insertion hole 110a.

[0054] An outlet hole 110d is formed between the insertion hole 110a, the receiving portion 110b, and the suction path 110c. The outlet hole 110d is formed near the insertion hole 110a. The outlet hole 110d extends through the main body portion 110. The outlet hole 110d is connected to the air supply portion 103 via an outlet pipe 131 for supplying high-pressure air toward the first substrate W1. A plurality of outlet holes 110d are formed. A plurality of outlet holes 110d are formed along the circumferential direction of the main body portion 110. Alternatively, a plurality of outlet holes 110d may be formed along the radial direction of the main body portion 110.

[0055] A recess 110e is formed on the lower surface of the main body 110. A plurality of pins 113 are provided in the recess 110e. The plurality of pins 113 are in contact with the upper surface of the first substrate W1, that is, the non-bonding surface W1n of the first substrate W1.

[0056] The suction cups 111 are housed in each receiving portion 110b. That is, a plurality of suction cups 111 are provided along the circumference of the main body portion 110. In addition, the suction cups 111 are arranged in two concentric circles with the insertion hole 110a. The suction cups 111 adsorb the outer peripheral side of the first substrate W1. In this way, the holding portion 101 has a plurality of suction cups 111 provided along the circumference of the holding portion 101.

[0057] The suction device 112 is, for example, a vacuum pump, used to evacuate the interior of the suction cup 111. By evacuating the interior of the suction cup 111, the non-bonding surface W1n of the first substrate W1 is adsorbed onto the suction cup 111, thereby the first substrate W1 is adsorbed and held by the holding part 101.

[0058] The impactor 102 is disposed, for example, on the upper surface of the main body 110. The impactor 102 includes a pressing pin 120, an actuator 121, and a direct-acting mechanism 122. The impactor 102 (an example of a pressing part) presses the first substrate W1 (an example of a substrate) in contact with it. The pressing pin 120 is a cylindrical member extending in the vertical direction and is supported by the actuator 121.

[0059] The actuator unit 121, for example, uses air supplied via an electro-pneumatic regulator (not shown) to generate a fixed pressure vertically downward. The actuator unit 121 can use the air supplied via the electro-pneumatic regulator to control the pressing load acting on the center of the first substrate W1, which is in contact with the center of the first substrate W1. Furthermore, the front end of the actuator unit 121 passes through the insertion hole 110a and can move freely up and down in the vertical direction.

[0060] The actuator section 121 is supported by the direct drive mechanism 122. The direct drive mechanism 122 moves the actuator section 121 in the vertical direction, for example, by a drive section with a built-in motor.

[0061] The impactor 102 controls the movement of the actuator section 121 via the direct motion mechanism 122, and controls the pressing load of the pressing pin 120 pressing the first substrate W1 via the actuator section 121. The impactor 102 (an example of the pressing section) presses the first substrate W1 in contact with the center of the first substrate W1 (an example of the substrate) held by the holding section 101, so that the center of the first substrate W1 protrudes.

[0062] The air supply unit 103 (an example of a curvature adjustment unit) adjusts the curvature of the first substrate W1 (an example of a substrate) pressed by the impactor 102 (an example of a pressing unit). The air supply unit 103 is, for example, an electro-pneumatic regulator, which supplies high-pressure air from the blow-out holes 110d (an example of a curvature adjustment unit) via the blow-out pipe 131. Specifically, the air supply unit 103 (an example of a curvature adjustment unit) supplies air (an example of a gas) toward the first substrate W1 (an example of a substrate) pressed by the impactor 102. A plurality of blow-out holes 110d (an example of a curvature adjustment unit) are provided along the circumference of the holding part 101. That is, high-pressure air is supplied toward the first substrate W1 from the plurality of blow-out holes 110d. In addition, the blow-out holes 110d (an example of a curvature adjustment unit) are provided between the impactor 102 (an example of a pressing unit) and the suction cup 111. By supplying high-pressure air to the first substrate W1, which is held in place by the holding part 101 and pressed by the impactor 102, through the blow-out hole 110d, the first substrate W1 is bent as a whole, and its curvature decreases. The curvature of the center part of the first substrate W1 pressed by the impactor 102 decreases.

[0063] The second suction cup 200 includes a holding part 201 (an example of a lower holding part) and a moving mechanism 202.

[0064] A holding portion 201 (an example of a lower holding portion) is provided below the holding portion 101. The holding portion 201 (an example of a lower holding portion) is used to hold a second substrate W2 (an example of a substrate) to be joined with the first substrate W1 (an example of a substrate) held by the holding portion 101. The holding portion 201 includes a main body portion 210 and a suction device 211. The main body portion 210 is formed in a circular shape, for example.

[0065] The main body 210 is provided with ribs 221 and a plurality of pins 220. The plurality of pins 220 abut against the lower surface of the second substrate W2, that is, the non-joining surface W2n of the second substrate W2. The ribs 221 are provided on the outside of the plurality of pins 220. The ribs 221 are formed in a ring shape to surround the plurality of pins 220, so as to support the outer periphery of the second substrate W2 throughout its entire circumference.

[0066] Additionally, a suction path 210a is formed in the main body 210. Multiple suction paths 210a are formed. The suction paths 210a are disposed within the area surrounded by the ribs 221. The suction paths 210a are connected to the suction device 211 via suction tubes 230.

[0067] The suction device 211 is, for example, a vacuum pump, which depressurizes the adsorption region surrounded by the ribs 221 by drawing a vacuum from multiple suction paths 210a. As a result, the second substrate W2, supported by the ribs 221 and the multiple pins 220, is adsorbed and held by the holding part 201.

[0068] The moving mechanism 202 moves the holding part 201 in the horizontal direction. In addition, the moving mechanism 202 is configured to allow the holding part 201 to move freely in the vertical direction and to rotate about the vertical axis.

[0069] The bonding device 41 includes a conveying section, a flipping mechanism, and a position adjustment mechanism, but these are not shown in the figures here. The conveying section temporarily holds the first substrate W1, the second substrate W2, and the overlapping substrate T. The position adjustment mechanism adjusts the orientation of the first substrate W1 and the second substrate W2 in the horizontal direction. The flipping mechanism flips the first substrate W1 between its forward and reverse sides.

[0070] <Jointing Process>

[0071] Next, refer to Figure 4 The flowchart is used to illustrate the joining process involved in the first embodiment. Figure 4 This is a flowchart illustrating the joining process involved in the first embodiment. It is executed based on the control of the control device 70. Figure 4 The various processes shown.

[0072] The bonding device 41 performs a holding process (S100). Specifically, the bonding device 41 holds the first substrate W1 by adsorbing and holding it by the first suction cup portion 100 and the second substrate W2 by adsorbing and holding it by the second suction cup portion 200.

[0073] The bonding device 41 performs a position alignment process (S101). Specifically, after aligning the first substrate W1 and the second substrate W2 in the horizontal direction, the bonding device 41 moves the holding part 201 in the vertical direction to bring the second substrate W2 closer to the first substrate W1.

[0074] The bonding device 41 performs a bonding process (S102). The bonding device 41 bends the first substrate W1 by causing the central portion of the first substrate W1 to protrude toward the second substrate W2. Specifically, the bonding device 41 presses the central portion of the first substrate W1 with an impactor 102. In addition, the bonding device 41 supplies high-pressure air toward the first substrate W1 from the blow hole 110d via the air supply unit 103.

[0075] Therefore, the first substrate W1 deforms in a manner that simultaneously suppresses stress concentration at the center of the first substrate W1 and protrudes towards the second substrate W2. The first substrate W1 is as follows... Figure 5 It deforms as shown. Figure 5 This is a diagram showing the displacement near the center of the first substrate W1 according to the first embodiment. Figure 5In the diagram, dashed lines represent the displacement when the center of the first substrate W1 is pressed by the impactor 102, and solid lines represent the displacement when high-pressure air is further supplied to the first substrate W1 by the air supply unit 103. Additionally, the diagram shows the displacement of the first substrate W1 in a non-bent state, set to "0", and the downward displacement.

[0076] When the first substrate W1 is pressed by the impactor 102, the center portion of the first substrate W1 is pressed by the impactor 102 in a concentrated manner. As a result, stress is concentrated in the center portion of the first substrate W1, and the difference in the amount of displacement of the first substrate W1 relative to the radial direction of the first substrate W1 becomes larger.

[0077] When high-pressure air is further supplied to the first substrate W1 through the air supply unit 103, the first substrate W1 is subjected to force as a whole by the high-pressure air, thus reducing the stress concentration at the center of the first substrate W1. Therefore, the difference in the amount of displacement of the first substrate W1 relative to the radial direction of the first substrate W1 becomes smaller. That is, by supplying high-pressure air toward the first substrate W1 from the air supply unit 103, the curvature of the first substrate W1 decreases.

[0078] Therefore, the radial extension of the first substrate W1 near the center of the first substrate W1 is as follows: Figure 6 As shown. Figure 6 This is a diagram showing the extension near the center of the first substrate W1 during the bonding process according to the first embodiment. Figure 6 In the diagram, dashed lines represent the extension when the center of the first substrate W1 is pressed by the impactor 102, and solid lines represent the extension when high-pressure air is further supplied to the first substrate W1 via the air supply section 103. Additionally, Figure 6 It shows the extension relative to the center of the first substrate W1.

[0079] The first substrate W1 is supplied with high-pressure air by the air supply unit 103, thereby suppressing the expansion near the center.

[0080] By bending the first substrate W1 so that its center protrudes towards the second substrate W2, the center of the first substrate and the center of the second substrate W2 are brought into contact. This initiates bonding between the center of the first substrate W1 and the center of the second substrate W2. The first substrate W1 and the second substrate W2 have undergone surface modification treatment. Therefore, van der Waals forces (intermolecular forces) are generated, and the bonding surfaces W1j and W2j of each substrate W1 and W2 are bonded together. Furthermore, the first substrate W1 and the second substrate W2 have undergone hydrophilication treatment. Therefore, the hydrophilic groups of the bonding surfaces W1j and W2j of each substrate W1 and W2 undergo hydrogen bonding, and the bonding surfaces W1j and W2j of each substrate W1 and W2 are firmly bonded together.

[0081] The bonding device 41 stops adsorbing the first substrate W1 by the suction cup 111. Specifically, the bonding device 41 stops the adsorption performed by the suction device 112. As a result, the first substrate W1 falls onto the second substrate W2 from the center to the outer periphery. Moreover, the bonding of the first substrate W1 and the second substrate W2 progresses from the center to the outer periphery, forming an overlapping substrate T.

[0082] <Effect>

[0083] The bonding device 41 includes a holding part 101, an impactor 102 (an example of a pressing part), and an air supply part 103 (an example of a curvature adjustment part). The holding part 101 holds the first substrate W1 (an example of a substrate) to be bonded. The impactor 102 presses the first substrate W1 against the center portion of the first substrate W1 held by the holding part 101, causing the center portion of the first substrate W1 to protrude. The air supply part 103 adjusts the curvature of the first substrate W1 pressed by the impactor 102.

[0084] Therefore, the bonding device 41 can suppress strain on the first substrate W1 pressed by the impactor 102. Specifically, the bonding device 41 can reduce stress concentration at the center of the first substrate W1, thereby suppressing strain on the first substrate W1. Therefore, the bonding device 41 can improve the bonding accuracy of the overlapping substrates T.

[0085] The air supply unit 103 supplies air to the first substrate W1 (an example of a substrate) being pressed by the impactor 102 (an example of a pressing part). Specifically, the air supply unit 103 supplies high-pressure air to the first substrate W1 to reduce the curvature of the center portion of the first substrate W1 being pressed by the impactor 102.

[0086] Therefore, the bonding device 41 can reduce stress concentration areas on the first substrate W1. Thus, the bonding device 41 can suppress strain on the first substrate W1, thereby improving the bonding accuracy of the overlapping substrates T.

[0087] Furthermore, the bonding device 41 can reduce stress concentration sites in the first substrate W1 throughout the bonding process, thereby suppressing strain in the first substrate W1. Therefore, the bonding device 41 can improve the bonding accuracy of the overlapping substrates T.

[0088] A plurality of blow holes 110d (an example of a curvature adjustment part) are provided along the circumference of the holding part 101.

[0089] Therefore, the bonding device 41 can evenly adjust the curvature of the first substrate W1 by using high-pressure air supplied from multiple blow holes 110d. Thus, the bonding device 41 can suppress strain on the first substrate W1, thereby improving the bonding accuracy of the overlapping substrates T.

[0090] The holding part 101 has a plurality of suction cups 111 arranged along the circumference of the holding part 101. The blow hole 110d is provided between the impactor 102 (an example of the pressing part) and the suction cups 111.

[0091] Therefore, the bonding device 41 can suppress the strain of the first substrate W1, which is held by the suction cup 111 and whose center is pressed by the impactor 102 and thus displaced downward, thereby improving the bonding accuracy of the overlapping substrates T.

[0092] The bonding device 41 includes a holding portion 201 (an example of a lower holding portion). The holding portion 201 is disposed below the holding portion 101. The holding portion 201 holds a second substrate W2 (an example of a substrate) to be bonded to the first substrate W1 (an example of a substrate) held by the holding portion 101.

[0093] Therefore, the bonding device 41 can suppress the positional deviation of the first substrate W1 and the second substrate W2 when bonding the first substrate W1 and the second substrate W2, thereby improving the bonding accuracy of the overlapping substrates T.

[0094] (Second Implementation)

[0095] Next, refer to Figure 7 The joining device 80 according to the second embodiment will be explained. Figure 7 This is a schematic diagram illustrating the structure of the joining device 80 according to the second embodiment. Here, structures different from those in the first embodiment will be described, while structures identical to those in the first embodiment will be labeled with the same reference numerals as in the first embodiment, and detailed descriptions will be omitted.

[0096] In addition to the impactor 102 for pressing the center of the first substrate W1, the first suction cup portion 300 of the bonding device 80 according to the second embodiment also includes an impactor 301 for curvature adjustment (an example of a curvature adjustment portion). Hereinafter, the impactor 102 for pressing the center of the first substrate W1 will be described as the first impactor 102, and the impactor 301 for curvature adjustment will be described as the second impactor 301.

[0097] The second impactor 301 (an example of a curvature adjustment part) presses against the first substrate W1 (an example of a substrate) in contact with it. The second impactor 301 is disposed radially between the first impactor 102 and the suction cup 111 on the first substrate W1. A plurality of second impactors 301 are disposed along the circumference of the first substrate W1. For example, the second impactors 301 are disposed at equal intervals along the circumference of the first substrate W1.

[0098] Alternatively, a plurality of second impactors 301 may be provided between the first impactor 102 and the suction cup 111.

[0099] The second impactor 301, like the first impactor 102, includes a pressing pin 302, an actuator section 303, and a direct-acting mechanism 304. The second impactor 301 presses against the first substrate W1 at a position radially outward from the center portion that is contacted by the first impactor 102. The second impactor 301 is used to reduce the curvature of the first substrate W1 pressed by the first impactor 102. Specifically, the second impactor 301 is used to reduce the curvature of the center portion of the first substrate W1 pressed by the first impactor 102.

[0100] The bonding device 80 bends the first substrate W1 toward the second substrate W2 by the first impactor 102 and the second impactor 301 to bond the first substrate W1 and the second substrate W2 to form an overlapping substrate T.

[0101] <Effect>

[0102] The second impactor 301 (an example of a curvature adjustment part) presses the first substrate W1 in contact with the first substrate W1 (an example of a substrate).

[0103] Therefore, the bonding device 80 can easily maintain the shape of the first substrate W1 with reduced curvature near the center, thereby suppressing strain deviation of the first substrate W1 when bonding the first substrate W1 to the second substrate W2. Thus, the bonding device 80 can improve the bonding accuracy of the overlapping substrates T.

[0104] (Third Implementation)

[0105] Next, refer to Figure 8 The joining device 81 according to the third embodiment will be explained. Figure 8 This is a schematic diagram showing the structure of the coupling device 81 according to the third embodiment. Here, structures different from those in the first embodiment will be described, while structures identical to those in the first embodiment will be labeled with the same reference numerals as those in the first embodiment, and detailed descriptions will be omitted.

[0106] In addition to the holding part 101, the impactor 102, and the air supply part 103, the first suction cup part 310 of the coupling device 81 according to the third embodiment also includes a suction device 311.

[0107] A suction hole 101f is formed in the main body 110 of the retaining part 101. The suction hole 101f is formed, for example, between the insertion hole 110a, the receiving part 110b, and the suction path 110c. Multiple suction holes 101f are formed. Multiple suction holes 101f are formed along the circumference of the main body 110. Alternatively, multiple suction holes 101f may be formed along the radial direction of the main body 110. Additionally, suction holes 101f may be formed between two rings of receiving parts 110b arranged radially in the main body 110.

[0108] The suction hole 101f is connected to the suction device 311 via the suction tube 315. Hereinafter, the suction device 112 used to hold the first substrate W1 by suction cup 111 will be described as the first suction device 112, and the suction device 311 used to perform suction through the suction hole 101f will be described as the second suction device 311.

[0109] The second suction device 311 is, for example, a vacuum pump, used to draw air between the first substrate W1 and the holding portion 101. Specifically, when the first substrate W1 and the second substrate W2 are joined, the second suction device 311 is used to draw air between the first substrate W1 and the holding portion 101. That is, the second suction device 311 is used to draw air from the non-joining surface W1n side of the first substrate W1 (an example of a substrate) that is pressed by the impactor 102 (an example of a pressing portion).

[0110] When the bonding device 81 bonds the first substrate W1 to the second substrate W2 by pressing the first substrate W1 with the impactor 102, it adjusts the stress acting on the first substrate W1 via the air supply unit 103 and the second suction device 311. During the bonding process, from the time the first substrate W1 is pressed by the impactor 102 until the bonding of the first substrate W1 and the second substrate W2 is completed, the bonding device 81 adjusts the stress acting on the first substrate W1 via the air supply unit 103 and the second suction device 311. The bonding device 81 adjusts the stress acting on the first substrate W1 via the air supply unit 103 and the second suction device 311 according to the progress of the bonding process.

[0111] Furthermore, during the bonding process, the bonding device 81 adjusts the falling speed of the first substrate W1 using the second suction device 311. Specifically, the bonding device 81 reduces the falling speed of the first substrate W1 by attracting air between the first substrate W1 and the holding portion 101 using the second suction device 311.

[0112] <Effect>

[0113] The joining device 81 includes a second suction device 311 (an example of a suction part). The second suction device 311 is used to attract air from the non-joining surface W1n side of the first substrate W1 (an example of a substrate) that is pressed by the impactor 102 (an example of a pressing part).

[0114] Therefore, the bonding device 81 can adjust the stress acting on the first substrate W1 during the bonding process, thereby suppressing strain on the first substrate W1. Specifically, the bonding device 81 can adjust the stress acting on the first substrate W1 according to the progress of bonding between the first substrate W1 and the second substrate W2. Thus, the bonding device 81 can suppress strain on the first substrate W1 throughout the entire bonding process, from the start of bonding between the first substrate W1 and the second substrate W2 until the bonding is completed. Therefore, the bonding device 81 can improve the bonding accuracy of the overlapping substrates T.

[0115] Furthermore, during the bonding process, when the suction cup 111 stops adsorbing the first substrate W1 and causing it to fall, the bonding speed at the outer periphery of the first substrate W1 increases. As a result, a sharp pressure change occurs in the space between the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2, causing condensation to form on the bonding surfaces W1j of the first substrate W1 and W2j of the second substrate W2. Moreover, the moisture generated by the condensation is trapped between the first substrate W1 and the second substrate W2, which may create a gap (edge ​​gap) throughout the entire periphery of the outer periphery of the bonded overlapping substrate T.

[0116] During the bonding process, the bonding device 81 draws air between the first substrate W1 and the holding part 101 through the second suction device 311, thereby adjusting the bonding speed and suppressing the generation of gaps on the outer periphery of the overlapping substrate T.

[0117] Furthermore, multiple second suction devices 311 may be provided. These multiple second suction devices 311 attract air between the first substrate W1 and the holding portion 101 by using different suction forces corresponding to different portions of the first substrate W1. Additionally, the joining device 81 may be equipped with valves, etc., and by adjusting the valves, air between the first substrate W1 and the holding portion 101 can be attracted by using different suction forces corresponding to different portions of the first substrate W1.

[0118] For example, when strain is periodically generated along the circumference of the first substrate W1, the amount of air drawn from each suction hole 101f can be adjusted by multiple suction devices 311 according to the strain characteristics of the first substrate W1. As a result, the bonding device 81 can adjust the displacement of the first substrate W1 according to the strain characteristics of the first substrate W1, thereby improving the bonding accuracy of the overlapping substrates T.

[0119] (Fourth Implementation)

[0120] Next, refer to Figure 9 The joining device 82 according to the fourth embodiment will be explained. Figure 9 This is a schematic diagram showing the structure of the coupling device 82 according to the fourth embodiment. Here, structures different from those in the first embodiment will be described, while structures identical to those in the first embodiment will be labeled with the same reference numerals as those in the first embodiment, and detailed descriptions will be omitted.

[0121] In addition to the holding part 101, the impactor 102, and the air supply part 103, the first suction cup part 320 of the coupling device 82 according to the fourth embodiment also includes a temperature adjustment part 330.

[0122] The temperature adjustment unit 330 is used to adjust the temperature of the air (an example of gas) supplied by the air supply unit 103 from the blow-out hole 110d. The temperature adjustment unit 330 is provided in the blow-out pipe 131. The temperature adjustment unit 330 is, for example, a heater for heating the air. In addition, the temperature adjustment unit 330 can also cool the air. Furthermore, multiple temperature adjustment units 330 may be provided. The bonding device 82 can, for example, supply air of different temperatures from multiple blow-out holes 110d toward the first substrate W through multiple temperature adjustment units 330.

[0123] The bonding device 82 adjusts the temperature of the first substrate W1 by adjusting the temperature of the air supplied from the blow-out hole 110d during the bonding process.

[0124] <Effect>

[0125] The coupling device 82 includes a temperature adjustment unit 330. The temperature adjustment unit 330 is used to adjust the temperature of the air (an example of gas) blown out by the air supply unit 103.

[0126] Therefore, the bonding device 82 can suppress the expansion and contraction deviations of the first substrate W1 when bonding the first substrate W1 and the second substrate W2. Thus, the bonding device 82 can improve the bonding accuracy of the overlapping substrates T.

[0127] (Modified Example)

[0128] In the modified examples, the bonding devices 41, 80, 81, and 82 may also alternately arrange the blow-out holes 110d and the suction cups 111 in the circumferential direction of the first substrate W1. Furthermore, in the modified examples, the bonding devices 41, 80, 81, and 82 may group multiple blow-out holes 110d together and multiple suction cups 111 together. Moreover, in the modified examples, the bonding devices 41, 80, 81, and 82 may alternately arrange groups of blow-out holes 110d and groups of suction cups 111 in the circumferential direction of the first substrate W1.

[0129] Therefore, the bonding devices 41, 80, 81, and 82 can adjust the displacement of the first substrate W1 for each portion of the first substrate W1. For example, when strain is periodically generated along the circumferential direction of the first substrate W1, the bonding devices 41, 80, 81, and 82 can adjust the displacement of the first substrate W1 according to the characteristics of the strain generated in the first substrate W1. Thus, the bonding devices 41, 80, 81, and 82 can improve the bonding accuracy of the overlapping substrates T.

[0130] Alternatively, the joining devices 41, 80, 81, and 82 described in the above embodiments can be combined and applied. For example, the second impactor 301 described in the second embodiment can be combined and applied with the second suction device 311 described in the third embodiment. Alternatively, the second impactor 301 described in the second embodiment can be combined and applied with the temperature adjustment unit 330 described in the fourth embodiment. Alternatively, the second suction device 311 described in the third embodiment can be combined and applied with the temperature adjustment unit 330 described in the fourth embodiment.

[0131] The bonding devices 41, 80, 81, and 82 involved in the modified examples can also cause the center portion of the second substrate W2 to protrude toward the first substrate W1, thereby bonding the first substrate W1 and the second substrate W2. For example, the bonding devices 41, 80, 81, and 82 involved in the modified examples can also press the center portion of the second substrate W2 with an impactor and reduce the curvature of the pressed second substrate W2 with an air supply section.

[0132] Furthermore, all points in the disclosed embodiments should be considered illustrative rather than restrictive. In fact, the above embodiments can be implemented in various ways. Additionally, the above embodiments can be omitted, substituted, and modified in various ways without departing from the appended claims and their spirit.

Claims

1. A coupling device comprising: A holding part, which is used to adsorb and hold the substrate to be bonded; The pressing part presses against the center portion of the substrate held by the holding part, thereby causing the center portion of the substrate to protrude; and A curvature adjustment unit is used to adjust the curvature of the substrate being pressed by the pressing unit. in, The curvature adjustment unit supplies gas to the substrate being pressed by the pressing unit near the pressing unit, thereby reducing the curvature of the central portion of the substrate being pressed by the pressing unit.

2. The joining device according to claim 1, characterized in that, It also includes a temperature adjustment unit for adjusting the temperature of the gas.

3. The coupling device according to claim 1 or 2, characterized in that, A plurality of curvature adjustment sections are provided along the circumference of the retaining section.

4. The coupling device according to claim 1 or 2, characterized in that, The retaining part has a plurality of suction cups arranged along the circumference of the retaining part. The curvature adjustment part is disposed between the pressing part and the suction cup.

5. The coupling device according to claim 1 or 2, characterized in that, It also includes a suction device for attracting air from the non-joining side of the substrate that is pressed by the pressing part.

6. The coupling device according to claim 1 or 2, characterized in that, It also includes a lower holding portion, which is disposed below the holding portion and is used to hold the substrate to be joined with the substrate held by the holding portion.

7. A coupling device comprising: A holding part, which is used to adsorb and hold the substrate to be bonded; The pressing part presses against the center portion of the substrate held by the holding part, thereby causing the center portion of the substrate to protrude; and A curvature adjustment unit is used to adjust the curvature of the substrate being pressed by the pressing unit. in, The curvature adjustment part presses the substrate in contact with the substrate near the pressing part, thereby reducing the curvature of the central part of the substrate that is pressed by the pressing part.

8. A joining method, comprising the following steps: The holding process involves adsorbing and holding the substrates to be bonded. The pressing process involves pressing the substrate using a pressing part that contacts the center portion of the substrate being adsorbed and held; and The adjustment process involves adjusting the curvature of the substrate being pressed by the pressing part. in, In the adjustment process, gas is supplied to the substrate being pressed by the pressing part near the pressing part, so that the curvature of the center part of the substrate being pressed by the pressing part is reduced.

9. A joining method, comprising the following steps: The holding process involves adsorbing and holding the substrates to be bonded. The pressing process involves pressing the substrate using a pressing part that contacts the center portion of the substrate being adsorbed and held; and The adjustment process involves adjusting the curvature of the substrate being pressed by the pressing part. in, In the adjustment process, the substrate is pressed in contact with the substrate near the pressing part, so that the curvature of the center part of the substrate pressed by the pressing part is reduced.

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