Fingerprint sensor, method of manufacturing the same, and display device including the same

Abstract

A fingerprint sensor, a method of manufacturing the fingerprint sensor, and a display device including the fingerprint sensor are disclosed. The fingerprint sensor includes a photosensitive layer having a photosensitive element in which a sensing current flows in response to an incident light, and a light guide layer disposed on the photosensitive layer. The light guide layer includes first light transmission films spaced apart from each other, a light blocking film disposed between the first light transmission films, and second light transmission films disposed between each of the first light transmission films and the light blocking film.

Description

Technical Field

[0001] This disclosure relates to a fingerprint sensor, and more specifically, to a fingerprint sensor, a method of manufacturing a fingerprint sensor, and a display device including the fingerprint sensor. Background Technology

[0002] Display devices are used in a variety of electronic devices such as smartphones, tablets, laptops / notebooks, monitors, and televisions. Portable electronic devices such as smartphones, tablets, and laptops / notebooks represent a large and growing segment of the electronic device market. Partly due to their small size and personal usability, portable electronic devices are often used to store private information such as contact numbers, call logs, messages, pictures, memos, a user's web browsing information, location information, and financial information. Therefore, to protect the private information stored in portable electronic devices, fingerprint authentication has been used to verify fingerprints as an example of a user's biometric information. Fingerprint authentication can be performed using a fingerprint sensor that scans a user's fingerprint. Fingerprint sensors can be implemented using optical scanners, ultrasonic scanners, or capacitive scanners. Optical fingerprint sensors may include a collimator having an optical sensing unit for sensing light, an opening for providing light to the optical sensing unit, and a light-blocking unit for blocking light. Fingerprint sensors have been integrated into display devices (such as those used in smartphones) to provide an integrated solution for display and fingerprint authentication.

[0003] Fingerprint sensors can be located in the bezel area or the non-display area of ​​a display device. However, when done this, the size of the non-display area of ​​the display device becomes larger than desired. Therefore, fingerprint sensors have recently been placed in the display area of ​​the display device. In this case, the fingerprint sensor is located below the display panel, and due to the light-blocking structure of the display area, only a small amount of light can incident on the photosensitive part of the fingerprint sensor. It is conceivable to reduce the area of ​​the light-blocking part of the collimator to increase the amount of light incident on the photosensitive part of the fingerprint sensor. However, in this case, the noise light incident on the photosensitive part increases. Therefore, the accuracy of fingerprint recognition decreases. Summary of the Invention

[0004] The fingerprint sensor includes: a photosensitive layer having a photosensitive element in which a sensing current flows according to incident light; and a light guide layer disposed on the photosensitive layer. The light guide layer includes: first light-transmitting films spaced apart from each other; light-blocking films disposed between the first light-transmitting films; and second light-transmitting films disposed between each of the first light-transmitting films and the light-blocking films.

[0005] The display device includes: a display panel for displaying images; and a fingerprint sensor disposed on the surface of the display panel and sensing light that has passed through the display panel. The fingerprint sensor includes: a photosensitive layer having a photosensitive element in which current is sensed flowing according to incident light; and a light guide layer disposed on the photosensitive layer. The light guide layer includes: first light-transmitting films spaced apart from each other; light-blocking films disposed between the first light-transmitting films; and second light-transmitting films disposed between each of the first light-transmitting films and the light-blocking films.

[0006] A method for manufacturing a fingerprint sensor includes the following steps: forming a photosensitive layer having a photosensitive element in which a sensing current flows according to incident light; forming an organic material on the photosensitive layer to form a light-transmitting layer; forming a mask pattern on the light-transmitting layer; etching the light-transmitting layer according to the mask pattern to form a first light-transmitting film; removing the mask pattern; forming an inorganic material on the first light-transmitting film to form a second light-transmitting film; and forming an organic material on the second light-transmitting film to form a light-blocking film.

[0007] The display device includes a display panel, which includes a display area and a non-display area at least partially surrounding the display area. The display area includes: a plurality of pixels configured to display an image; and a fingerprint sensor disposed within the display area of ​​the display panel. The fingerprint sensor includes a photosensitive element and a light guide layer disposed on the photosensitive element. The light guide layer includes: a plurality of first light-transmitting films; a light-blocking film disposed between adjacent first light-transmitting films; and a second light-transmitting film disposed between each of the plurality of first light-transmitting films and the light-blocking film. Attached Figure Description

[0008] The above and other features of the present invention will become clearer from a detailed description of exemplary embodiments of the invention with reference to the accompanying drawings, in which:

[0009] Figure 1 This is a perspective view showing a display device according to an exemplary embodiment of the present disclosure;

[0010] Figure 2 It is shown Figure 1 A perspective view of the fingerprint sensor;

[0011] Figure 3 It shows along Figure 1 A cross-sectional view of an example display panel and fingerprint sensor, taken by line I-I';

[0012] Figure 4 It is shown Figure 3 An enlarged cross-sectional view of an example of the display panel in area A;

[0013] Figure 5 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A;

[0014] Figures 6 to 8 It shows the basis Figure 5 An exemplary view of the light propagation direction at the refractive index of the first and second transparent films;

[0015] Figure 9 This is a graph showing the transmittance of the opening relative to the angle of incidence of light for different refractive indices of the second transparent film.

[0016] Figure 10 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A;

[0017] Figure 11 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A;

[0018] Figure 12 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A;

[0019] Figure 13 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A;

[0020] Figure 14 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A;

[0021] Figure 15 This is a flowchart illustrating a method for manufacturing a fingerprint sensor according to an exemplary embodiment of the present disclosure;

[0022] Figures 16 to 21 It shows the manufacturing process. Figure 15 A cross-sectional view of a fingerprint sensor method;

[0023] Figure 22 This is a flowchart illustrating a method for manufacturing a fingerprint sensor according to exemplary embodiments of the present disclosure; and

[0024] Figures 23 to 24 It shows the manufacturing process. Figure 22 A cross-sectional view of a fingerprint sensor method. Detailed Implementation

[0025] In the following description, exemplary embodiments of the inventive concept will be described more fully with reference to the accompanying drawings. Throughout the specification and drawings, the same reference numerals may denote the same elements.

[0026] It will be understood that when a component, such as a membrane, region, layer, or element, is referred to as being "on" another component, "connected to," "bonded to" another component, or "adjacent to" another component, the component may be directly on, directly connected to, directly bonded to, or directly adjacent to the other component, or there may be intermediate components. It will also be understood that when a component is referred to as being "between" two components, the component may be the only component between the two components, or there may be one or more intermediate components. It will also be understood that when a component is referred to as "covering" another component, the component may be the only component covering the other component, or one or more intermediate components may also cover the other component. Other terms used to describe relationships between elements can be interpreted in a similar manner.

[0027] It will also be understood that, unless the context explicitly states otherwise, the description of a feature or aspect within each exemplary embodiment can be used for other similar features or aspects in other exemplary embodiments. Therefore, it is contemplated that all features and structures described herein can be mixed and matched in any desired manner.

[0028] As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “one,” and “the” are also intended to include the plural forms.

[0029] For ease of description, spatial relative terms such as “below,” “under,” “above,” and “above” are used herein to describe the relationship of one element or feature to another element or feature as shown in the figures. It will be understood that spatial relative terms are intended to cover different orientations of the device in use or operation other than those depicted in the figures. For example, if the device in the figures is flipped, an element described as “below” other elements or features would then be positioned “above” those other elements or features. Thus, the exemplary term “below” can cover both above and below orientations.

[0030] According to an exemplary embodiment of the present invention, a fingerprint sensor may include a photosensitive layer and a light-guiding layer disposed on the photosensitive layer. The photosensitive layer may include a photosensitive element, such as a sensor that generates a sensing current in response to incident light and / or proportionally to the incident light. The light-guiding layer may include a light-transmitting film and a light-blocking film disposed between adjacent light-transmitting films. The light-guiding layer may also include an additional light-transmitting film between the first light-transmitting film and the light-blocking film.

[0031] Figure 1 This is a perspective view showing a display device according to an exemplary embodiment of the present disclosure.

[0032] Reference Figure 1The display device 10 is configured to display moving images and / or still images. The display device 10 can be used as a display screen for portable electronic devices such as mobile phones, smartphones, tablet computers, smartwatches, watch phones, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation devices, and / or ultra-mobile PCs (UMPCs) as well as for various products such as televisions, laptops / notebook computers, monitors, electronic billboards, and / or Internet of Things devices.

[0033] Display device 10 may be a light-emitting display device, such as an organic light-emitting diode (OLED) display device using organic light-emitting diodes, a quantum dot light-emitting display device including a quantum dot light-emitting layer, an inorganic light-emitting display device including inorganic semiconductors, and a micro light-emitting display device using micro light-emitting diodes (LEDs). In the following description, organic light-emitting diode display devices are described as examples of display device 10. However, it will be understood that this disclosure is not necessarily limited thereto, and any form of display device including one of the types of display devices described above may be used in any of the examples discussed herein.

[0034] The display device 10 includes a display panel 100, a display driving circuit 200, a circuit board 300, and a fingerprint sensor 400.

[0035] The display panel 100 can be formed as a rectangular plane having a short side extending in a first direction (X-axis direction) and a long side extending in a second direction (Y-axis direction) intersecting the first direction (X-axis direction). Each of the corners where the short side in the first direction (X-axis direction) and the long side in the second direction (Y-axis direction) intersect can be rounded with a predetermined curvature (to create a rectangular display panel 100 with rounded corners), or it can be a right angle (to create a rectangular display panel 100). When viewed from above, the shape of the display panel 100 is not limited to a quadrilateral shape, but can be formed as various polygonal shapes, circular shapes, elliptical shapes, or any other arbitrary shape. The display panel 100 can be formed as flat, but is not limited to this. For example, the display panel 100 may include curved portions formed at the left and / or right ends, which may have a constant curvature or a varying curvature. In addition, the display panel 100 can be flexible, so that it can be bent, folded, or rolled up without breaking or otherwise fracturing.

[0036] The display panel 100 may include a main area MA and a secondary area SBA.

[0037] The main region MA may include a display region DA for displaying an image and a non-display region NDA that at least partially surrounds the display region DA. The display region DA may include multiple pixels for displaying the image. No pixels may be provided within the non-display region NDA. The non-display region NDA may be defined as the area extending from the outer edge of the display region DA to the edge of the display panel 100.

[0038] The display area DA may include the fingerprint sensing area FSA. The fingerprint sensing area FSA refers to the area where the fingerprint sensor 400 is located. The fingerprint sensing area FSA may be, but is not limited to, such as... Figure 1 The image shows a portion of the display area DA. In this case, fingerprints can only be sensed within this specific portion of the display area DA. Alternatively, the fingerprint sensing area FSA can be formed to extend across the entire display area DA and can be substantially identical to the display area DA. In this case, fingerprints can be sensed anywhere within the display area DA.

[0039] The auxiliary region SBA may protrude from one side of the main region MA in the second direction (Y-axis direction). The length of the auxiliary region SBA in the first direction (X-axis direction) may be smaller than the length of the main region MA in the first direction (X-axis direction). The length of the auxiliary region SBA in the second direction (Y-axis direction) may be smaller than the length of the main region MA in the second direction (Y-axis direction). However, it will be understood that this disclosure is not limited thereto.

[0040] Although the support area SBA is Figure 1 The example shown is unfolded, but the auxiliary region SBA can be bent and can bend behind the main region MA so as to be disposed on the lower surface of the main region MA. When the auxiliary region SBA is bent, it can be superimposed on the main region MA in the thickness direction (Z-axis direction) of the display panel 100. The display driving circuit 200 can be disposed in the auxiliary region SBA.

[0041] The display driving circuit 200 can generate signals and voltages for driving the display panel 100. The display driving circuit 200 can be implemented as an integrated circuit (IC) and can be attached to the display panel 100 via chip-on-glass (COG) technology, chip-on-plastic (COP) technology, or ultrasonic bonding. However, it will be understood that this disclosure is not limited thereto. For example, the display driving circuit 200 can be attached to the circuit board 300 via chip-on-film (COF) technology.

[0042] The circuit board 300 can be attached to the end of the auxiliary area SBA of the display panel 100 using an anisotropic conductive film. Therefore, the circuit board 300 can be electrically connected to the display panel 100 and the display driving circuit 200. The display panel 100 and the display driving circuit 200 can receive digital video data, timing signals, and driving voltages through the circuit board 300. The circuit board 300 can be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip-on-film.

[0043] The fingerprint sensor 400 can be disposed on the lower surface of the display panel 100. The fingerprint sensor 400 can be attached to the lower surface of the display panel 100 using a transparent adhesive member. For example, the transparent adhesive member can be a transparent adhesive film such as an optically clear adhesive (OCA) film or a transparent adhesive resin such as an optically clear resin (OCR).

[0044] Figure 2 It is shown Figure 1 A perspective view of the fingerprint sensor.

[0045] Reference Figure 2 The fingerprint sensor 400 may include a fingerprint sensing layer 410 (which may be a photosensitive layer) and a light guide layer 420.

[0046] The fingerprint sensing layer 410 may include sensor pixels arranged in a first direction (X-axis direction) and a second direction (Y-axis direction). Each of the sensor pixels may include a photosensitive element through which sensing current flows according to incident light, at least one transistor connected to the photosensitive element, and at least one capacitor connected to the photosensitive element or the transistor. The photosensitive element may be a photodiode or a phototransistor.

[0047] A light guide layer 420 is disposed on the fingerprint sensing layer 410. The light guide layer 420 includes a plurality of openings OA arranged in a first direction (X-axis direction) and a light-blocking region LSA disposed between the openings OA. Each of the openings OA can be a region that transmits light, while the light-blocking region LSA can be a region that blocks light. Figure 2 As shown, each of the openings OA can have a circular shape when viewed from above. However, it will be understood that this disclosure is not limited to this. Each opening OA can also have an elliptical or polygonal shape when viewed from above.

[0048] The fingerprint circuit board 500 can be disposed on a portion of the fingerprint sensing layer 410 not covered by the light guide layer 420. The fingerprint circuit board 500 can be attached to the portion of the upper surface of the fingerprint sensing layer 410 not covered by the light guide layer 420 using an anisotropic conductive film. Therefore, the fingerprint circuit board 500 can be electrically connected to the sensor pixels of the fingerprint sensing layer 410. Thus, each of the sensor pixels in the fingerprint sensing layer 410 can output a sensing voltage through the fingerprint circuit board 500 based on the sensing current of the photosensitive element. The fingerprint driving circuit 510, electrically connected to the fingerprint circuit board 500, can recognize the fingerprint pattern of the finger based on the sensing voltage of the sensor pixels.

[0049] The fingerprint driver circuit 510 can be configured (but is not limited to) in ways such as Figure 2 The fingerprint circuit board 500 shown is mounted on the fingerprint circuit board 500. The fingerprint driving circuit 510 may be disposed on a separate circuit board electrically connected to the fingerprint circuit board 500. The fingerprint circuit board 500 may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip-on-film.

[0050] Figure 3 It shows along Figure 1 A cross-sectional view of an example display panel and fingerprint sensor, taken by line I-I'. Figure 3 An example is shown where a user has touched the display device 10 with his / her finger F for fingerprint recognition.

[0051] Reference Figure 3 The display device 10 also includes a cover window CW disposed on the upper surface of the display panel 100. The cover window CW can be disposed on the display panel 100 such that it covers the upper surface of the display panel 100. The cover window CW can protect the upper surface of the display panel 100. The cover window CW can be attached to the upper surface of the display panel 100 using a transparent adhesive member.

[0052] Cover window CWs can be made of transparent materials such as glass and / or plastic. For example, when a cover window CW is glass, it can be ultra-thin glass (UTG) with a thickness of 0.1 mm or less. When a cover window CW is made of plastic, it can include a transparent polyimide film.

[0053] The fingerprint sensor 400 can be disposed on the lower surface of the display panel 100. The fingerprint sensor 400 can be attached to the lower surface of the display panel 100 using a transparent adhesive component.

[0054] The fingerprint sensor 400 may include a fingerprint sensing layer 410 containing sensor pixels SP and a light guide layer 420 including an opening OA and a light-blocking region LSA disposed between the opening OA. The sensor pixels SP may be stacked with the opening OA of the light guide layer 420 in a third direction (Z-axis direction).

[0055] Each of the openings OA in the light guide layer 420 can be a channel through which light reflected from the ridge RID and valley VAL of the fingerprint of finger F is incident. For example, when the user's finger F contacts the cover window CW, light output from the display panel 100 can be reflected from the ridge RID and valley VAL of the fingerprint of finger F. The light reflected from finger F can be incident on the sensor pixel SP of the fingerprint sensing layer 410 through the openings OA of the display panel 100 and the light guide layer 420.

[0056] The range of light LR incident on the sensor pixel SP through the opening OA of the light guide layer 420 can be shorter than the distance FP between the ridge RID and valley VAL of the fingerprint of finger F. The distance FP between the ridge RID and valley VAL of finger F can be approximately 500 μm. Therefore, the sensing current flowing through the photosensitive element in each of the sensor pixels SP can vary depending on whether the light is reflected from the ridge RID or valley VAL of the fingerprint of finger F. Therefore, the sensing voltage output from the sensor pixel SP can vary depending on whether the light is reflected from the ridge RID or valley VAL of the fingerprint of finger F. In this way, the fingerprint driving circuit 510 can recognize the fingerprint pattern of finger F based on the sensing voltage of the sensor pixel SP.

[0057] Figure 4 It is shown Figure 3 An enlarged cross-sectional view of an example of the display panel in area A.

[0058] Reference Figure 4 The display panel 100 may include display pixels for displaying images. Each of the display pixels may include a first thin-film transistor ST1 and a light-emitting element 170.

[0059] A first buffer layer BF1 can be disposed on a first substrate SUB1. A second substrate SUB2 can be disposed on the first buffer layer BF1. A second buffer layer BF2 can be disposed on the second substrate SUB2.

[0060] Each of the first substrate SUB1 and the second substrate SUB2 may be made of an insulating material such as a polymer resin. For example, the first substrate SUB1 and the second substrate SUB2 may include polyimide. Each of the first substrate SUB1 and the second substrate SUB2 may be a flexible substrate that can be bent, folded, rolled, etc., without breaking or otherwise fracturing.

[0061] Each of the first buffer layer BF1 and the second buffer layer BF2 is a layer used to protect the thin-film transistor layer and the emitter layer 172 of the emitter material layer from moisture that permeates through the first substrate SUB1 and the second substrate SUB2, which are susceptible to moisture penetration. Each of the first buffer layer BF1 and the second buffer layer BF2 may consist of a plurality of inorganic layers stacked alternately with each other. For example, each of the first buffer layer BF1 and the second buffer layer BF2 may consist of a plurality of layers in which one or more inorganic layers of silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide are stacked alternately with each other.

[0062] A light-blocking film BML can be disposed on the second substrate SUB2. The light-blocking film BML can be stacked with the first active layer ACT1 of the first thin-film transistor ST1 in the third direction (Z-axis direction) to prevent leakage current when light is incident on the first active layer ACT1 of the first thin-film transistor ST1. The light-blocking film BML can be composed of one or more single or multiple layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) and their alloys. The light-blocking film BML can be omitted.

[0063] The first active layer ACT1 of the first thin-film transistor ST1 can be disposed on the second buffer layer BF2. The first active layer ACT1 of the first thin-film transistor ST1 includes polycrystalline silicon, monocrystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or oxide semiconductor. Since the first active layer ACT1 of the first thin-film transistor ST1 is not completely covered by the first gate insulating layer GI1, but is partially exposed and doped with impurities or ions, the doped portion of the first active layer ACT1 of the first thin-film transistor ST1 can have the desired conductivity. Therefore, the first source electrode S1 and the first drain electrode D1 of the first active layer ACT1 of the first thin-film transistor ST1 can be formed.

[0064] The first gate insulating layer GI1 can be disposed on the first active layer ACT1 of the first thin-film transistor ST1. Although in Figure 4 In the example shown, the first gate insulating layer GI1 is disposed between the first gate electrode G1 and the first active layer ACT1 of the first thin-film transistor ST1, but this disclosure is not limited thereto. The first gate insulating layer GI1 may be disposed between the first interlayer dielectric layer 141 and the first active layer ACT1, and between the first interlayer dielectric layer 141 and the second buffer layer BF2. The first gate insulating layer GI1 may be formed of an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0065] The first gate electrode G1 of the first thin-film transistor ST1 may be disposed on the first gate insulating layer GI1. The first gate electrode G1 of the first thin-film transistor ST1 may be stacked with the first active layer ACT1 in the third direction (Z-axis direction). The first gate electrode G1 of the first thin-film transistor ST1 may be composed of one or more single layers or multiple layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) and their alloys.

[0066] The first interlayer dielectric layer 141 may be disposed on the first gate electrode G1 of the first thin-film transistor ST1. The first interlayer dielectric layer 141 may be formed of an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer dielectric layer 141 may include multiple inorganic layers.

[0067] The first capacitor electrode CAE1 can be disposed on the first interlayer dielectric layer 141. The first capacitor electrode CAE1 can be stacked with the first gate electrode G1 of the first thin film transistor ST1 in the third direction (Z-axis direction). Since the first interlayer dielectric layer 141 has a predetermined dielectric constant, the capacitor can be formed by the first capacitor electrode CAE1, the first gate electrode G1, and the first interlayer dielectric layer 141 disposed between the first capacitor electrode CAE1 and the first gate electrode G1. The first capacitor electrode CAE1 can be composed of one or more single layers or multiple layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) and their alloys.

[0068] The second interlayer dielectric layer 142 can be disposed above the first capacitor electrode CAE1. The second interlayer dielectric layer 142 can be formed of an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer dielectric layer 142 may include multiple inorganic layers.

[0069] The first anode connection electrode ANDE1 can be disposed on the second interlayer dielectric layer 142. The first anode connection electrode ANDE1 can be connected to the first drain electrode D1 of the first thin film transistor ST1 through the first anode contact hole ANCT1, which penetrates the first interlayer dielectric layer 141 and the second interlayer dielectric layer 142 to expose the first drain electrode D1 of the first thin film transistor ST1. The first anode connection electrode ANDE1 can be composed of one or more single layers or multiple layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) and their alloys.

[0070] The first interlayer dielectric layer 141 and the second interlayer dielectric layer 142 together can form an interlayer dielectric 140.

[0071] The first organic layer 160 may be disposed on the first anode connection electrode ANDE1 for planarization. The first organic layer 160 may be formed as an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0072] The second anode connection electrode ANDE2 can be disposed on the first organic layer 160. The second anode connection electrode ANDE2 can be connected to the first anode connection electrode ANDE1 through the second anode contact hole ANCT2, which penetrates the first organic layer 160 to expose the first anode connection electrode ANDE1. The second anode connection electrode ANDE2 can be composed of one or more single layers or multiple layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) and their alloys.

[0073] The second organic layer 180 can be disposed on the second anode connection electrode ANDE2. The second organic layer 180 can be formed as an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin and polyimide resin.

[0074] exist Figure 4 In this embodiment, the first thin-film transistor ST1 is implemented as a top-gate transistor in which the first gate electrode G1 is located above the first active layer ACT1. However, it will be understood that this disclosure is not limited thereto. The first thin-film transistor ST1 may be implemented as a bottom-gate transistor in which the first gate electrode G1 is located below the first active layer ACT1, or as a dual-gate transistor in which the first gate electrode G1 is disposed above and below the first active layer ACT1.

[0075] The light-emitting element 170 and the embankment 190 may be disposed on the second organic layer 180. Each of the light-emitting elements 170 may include a first light-emitting electrode 171, an emitting layer 172, and a second light-emitting electrode 173.

[0076] The first light-emitting electrode 171 can be formed on the second organic layer 180. The first light-emitting electrode 171 can be connected to the second anode connection electrode ANDE2 through the third anode contact hole ANCT3, which penetrates the second organic layer 180 to expose the second anode connection electrode ANDE2.

[0077] In a top-emitting organic light-emitting diode (OLED) in which light is emitted from the emitting layer 172 toward the second light-emitting electrode 173, the first light-emitting electrode 171 may be made of a metallic material with high reflectivity (such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO / APC / ITO)). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0078] A dam 190 may separate the first light-emitting electrode 171 on the second organic layer 180 to define an emission region. The dam 190 may be formed to cover the edge of the first light-emitting electrode 171. The dam 190 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0079] In the emission region, the first light-emitting electrode 171, the emission layer 172, and the second light-emitting electrode 173 are stacked sequentially on each other, such that holes from the first light-emitting electrode 171 and electrons from the second light-emitting electrode 173 combine with each other in the emission layer 172 to emit light.

[0080] An emitting layer 172 is formed on the first light-emitting electrode 171 and the embankment 190. The emitting layer 172 may include organic materials and emits light of a certain color. For example, the emitting layer 172 may include a hole transport layer, an organic material layer, and an electron transport layer.

[0081] A second light-emitting electrode 173 is formed on the emitting layer 172. The second light-emitting electrode 173 may be formed to cover the emitting layer 172. The second light-emitting electrode 173 may be a common layer formed through all emitting regions. A capping layer may be formed on the second light-emitting electrode 173.

[0082] In the top-emitting structure, the second light-emitting electrode 173 can be formed of a transparent conductive oxide (TCO) (such as indium tin oxide (ITO) and indium zinc oxide (IZO) that can transmit light) or a semi-transmissive conductive material (such as magnesium (Mg), silver (Ag), and alloys of magnesium (Mg) and silver (Ag)). When the second light-emitting electrode 173 is formed of a semi-transmissive conductive material, the light extraction efficiency can be improved by using a microcavity.

[0083] An encapsulation layer TFE can be disposed on the second light-emitting electrode 173. The encapsulation layer TFE includes at least one inorganic layer to prevent oxygen or moisture from penetrating into the light-emitting element layer. In addition, the encapsulation layer TFE includes at least one organic layer to protect the light-emitting element layer from foreign matter such as dust. For example, the encapsulation layer TFE includes a first inorganic layer TFE1, an organic layer TFE2, and a second inorganic layer TFE3.

[0084] A first inorganic layer TFE1 can be disposed on the second light-emitting electrode 173, an organic layer TFE2 can be disposed on the first inorganic layer TFE1, and a second inorganic layer TFE3 can be disposed on the organic layer TFE2. The first inorganic layer TFE1 and the second inorganic layer TFE3 can be composed of multiple layers in which one or more inorganic layers, including silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide, are stacked alternately. The organic layer TFE2 can be a monomer.

[0085] Figure 5 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A.

[0086] Reference Figure 5 The fingerprint sensor 400 may include a fingerprint sensing layer 410 and a light guide layer 420 disposed on the fingerprint sensing layer 410.

[0087] The fingerprint sensing layer 410 may include sensor pixels SP for sensing light. Each of the sensor pixels SP may include a second thin-film transistor ST2 and a photosensitive element PD.

[0088] A buffer layer (BF) can be disposed on the fingerprint sensor substrate (FSUB). The fingerprint sensor substrate (FSUB) can be made of an insulating material such as a polymer resin. For example, the fingerprint sensor substrate (FSUB) may include polyimide. Each fingerprint sensor substrate (FSUB) can be a flexible substrate that can be bent, folded, or rolled without breaking or otherwise fracturing.

[0089] The buffer layer BF is configured to protect the thin-film transistors and photosensitive element PD of the fingerprint sensing layer 410 from moisture that penetrates through the fingerprint sensor substrate FSUB, which is susceptible to moisture penetration. The buffer layer BF can be formed of multiple inorganic layers stacked alternately with each other. For example, the buffer layer BF can consist of multiple layers in which one or more inorganic layers, such as silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide, are stacked alternately with each other.

[0090] The second active layer ACT2 of the second thin-film transistor ST2 can be disposed on the buffer layer BF. The second active layer ACT2 of the second thin-film transistor ST2 includes polycrystalline silicon, monocrystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or oxide semiconductor. Since the second active layer ACT2 of the second thin-film transistor ST2 is not completely covered by the second gate insulating layer GI2, but is partially exposed and doped with impurities or ions, the doped portion of the second active layer ACT2 of the second thin-film transistor ST2 can have the desired conductivity. Therefore, a second source electrode S2 and a second drain electrode D2 can be formed in the second active layer ACT2 of the second thin-film transistor ST2.

[0091] The second gate insulating layer GI2 can be disposed on the second active layer ACT2 of the second thin-film transistor ST2. Although in Figure 5 In the example shown, the second gate insulating layer GI2 is disposed between the second gate electrode G2 and the second active layer ACT2 of the second thin-film transistor ST2, and between the first fingerprint capacitor electrode FCE1 and the buffer layer BF; however, this disclosure is not limited thereto. The second gate insulating layer GI2 may be disposed between the first insulating layer INS1 and the second active layer ACT2, and between the first insulating layer INS1 and the buffer layer BF. The second gate insulating layer GI2 may be formed of an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0092] The second gate electrode G2 and the first fingerprint capacitor electrode FCE1 of the second thin-film transistor ST2 can be disposed on the second gate insulating layer GI2. The second gate electrode G2 of the second thin-film transistor ST2 can be stacked with the second active layer ACT2 in the third direction (Z-axis direction). The second gate electrode G2 and the first fingerprint capacitor electrode FCE1 of the second thin-film transistor ST2 can be composed of one or more single layers or multiple layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) and their alloys.

[0093] A first insulating layer INS1 can be disposed on the second gate electrode G2 and the first fingerprint capacitor electrode FCE1 of the second thin-film transistor ST2. The first insulating layer INS1 can be formed of an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first insulating layer INS1 may include multiple inorganic layers.

[0094] A photosensitive element PD and a second fingerprint capacitor electrode FCE2 can be disposed on a first insulating layer INS1. The second fingerprint capacitor electrode FCE2 can be stacked with the first fingerprint capacitor electrode FCE1 in a third direction (Z-axis direction). Since the first insulating layer INS1 has a predetermined dielectric constant, the capacitor can be formed by the first fingerprint capacitor electrode FCE1, the second fingerprint capacitor electrode FCE2, and the first insulating layer INS1 disposed between the first fingerprint capacitor electrode FCE1 and the second fingerprint capacitor electrode FCE2.

[0095] Photosensitive elements (PDs) can be implemented as, but are not limited to, such as Figure 5 The photodiode shown is a photosensitive element (PD). The photosensitive element (PD) can optionally be implemented as a phototransistor. The photosensitive element (PD) may include a first sensing electrode (PCE), a sensing semiconductor layer (PSEM), and a second sensing electrode (PAE). The first sensing electrode (PCE) may be a cathode electrode, and the second sensing electrode (PAE) may be an anode electrode.

[0096] The first sensing electrode PCE can be disposed on the first insulating layer INS1. The first sensing electrode PCE can be made of the same material as the second fingerprint capacitor electrode FCE2. The first sensing electrode PCE and the second fingerprint capacitor electrode FCE2 can be composed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu) and / or aluminum (Al), or can be composed of a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO / APC / ITO).

[0097] A photodetector semiconductor layer (PSEM) can be disposed on the first sensing electrode (PCE). The PSEM can have a PIN structure in which a p-type semiconductor layer (PL), an i-type semiconductor layer (IL), and an n-type semiconductor layer (NL) are sequentially stacked on top of each other. When the PSEM has a PIN structure, the i-type semiconductor layer (IL) is depleted by the p-type semiconductor layer (PL) and the n-type semiconductor layer (NL), thereby generating an electric field therein. Holes and electrons generated by sunlight drift through this electric field. Therefore, holes can be collected to the second sensing electrode (PAE) through the p-type semiconductor layer (PL), while electrons can be collected to the first sensing electrode (PCE) through the n-type semiconductor layer (NL).

[0098] The p-type semiconductor layer PL can be positioned closer to the surface on which external light is incident, while the n-type semiconductor layer NL can be positioned further away from the surface on which external light is incident. Since the drift mobility of holes is lower than that of electrons, it is preferable to form the p-type semiconductor layer PL closer to the surface on which external light is incident in order to improve the collection efficiency of the incident light.

[0099] An n-type semiconductor layer NL can be disposed on the first sensing electrode PCE, an i-type semiconductor layer IL can be disposed on the n-type semiconductor layer NL, and a p-type semiconductor layer PL can be disposed on the i-type semiconductor layer IL. In this case, the p-type semiconductor layer PL can be formed by doping amorphous silicon (a-Si:H) with a p-type dopant. The i-type semiconductor layer IL can be made of amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H). The n-type semiconductor layer NL can be formed by doping amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H) with an n-type dopant. The p-type semiconductor layer PL and the n-type semiconductor layer NL can be formed to have approximately The thickness of the i-type semiconductor layer IL can be formed to have to The thickness.

[0100] Optionally, the n-type semiconductor layer NL can be disposed on the first sensing electrode PCE, and the i-type semiconductor layer IL can be omitted. The p-type semiconductor layer PL can be disposed on the n-type semiconductor layer NL. In this case, the p-type semiconductor layer PL can be formed by doping amorphous silicon (a-Si:H) with a p-type dopant. The n-type semiconductor layer NL can be formed by doping amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H) with an n-type dopant. The p-type semiconductor layer PL and the n-type semiconductor layer NL can be formed to have The thickness.

[0101] Furthermore, the upper or lower surface of at least one of the first sensing electrode PCE, the p-type semiconductor layer PL, the i-type semiconductor layer IL, the n-type semiconductor layer NL, and the second sensing electrode PAE can be formed into a non-uniform structure via a texturing process to improve the efficiency of absorbing external light. A texturing process is a process that forms a non-uniform structure on the surface of a material (such as the surface of a fabric). Texturing can be performed via photolithographic etching, anisotropic etching using a chemical solution, or a groove formation process using mechanical scribing.

[0102] The second sensing electrode PAE can be disposed on the p-type semiconductor layer PL. The second sensing electrode PAE can be made of a transparent conductive material (TCO) that can transmit light (such as ITO and IZO).

[0103] The second insulating layer INS2 can be disposed on the photosensitive element PD and the second fingerprint capacitor electrode FCE2. The second insulating layer INS2 can be formed of an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second insulating layer INS2 may include multiple inorganic layers.

[0104] The first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3 can be disposed on the second insulating layer INS2.

[0105] The first connection electrode CE1 can be connected to the second source electrode S2 of the second thin film transistor ST2 through the source contact hole SCT. The source contact hole SCT penetrates the first insulating layer INS1 and the second insulating layer INS2 to expose the second source electrode S2 of the second thin film transistor ST2.

[0106] The second connection electrode CE2 can be connected to the second drain electrode D2 of the second thin-film transistor ST2 through a drain contact hole DCT. The drain contact hole DCT penetrates the first insulating layer INS1 and the second insulating layer INS2 to expose the second drain electrode D2 of the second thin-film transistor ST2. The second connection electrode CE2 can also be connected to the first sensing electrode PCE through a first sensing contact hole RCT1. The first sensing contact hole RCT1 penetrates the second insulating layer INS2 to expose the first sensing electrode PCE. Therefore, the second drain electrode D2 of the second thin-film transistor ST2 and the first sensing electrode PCE of the photosensitive element PD can be connected through the second connection electrode CE2.

[0107] The third connecting electrode CE3 can be connected to the second sensing electrode PAE through the second sensing contact hole RCT2, which penetrates the second insulating layer INS2 to expose the second sensing electrode PAE.

[0108] The first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3 may be composed of one or more single or multiple layers of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) and their alloys.

[0109] A third insulating layer INS3 may be disposed on the first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3. The third insulating layer INS3 may be formed of an inorganic layer, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The third insulating layer INS3 may include multiple inorganic layers. The third insulating layer INS3 may be omitted.

[0110] The planarization layer PLA can be disposed on the third insulating layer INS3. The planarization layer PLA can be formed from an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0111] The light guide layer 420 may include a first light-transmitting film LT1, a second light-transmitting film LT2, and a light-blocking film LS.

[0112] The first light-transmitting film LT1 can be disposed on the planarization layer PLA of the fingerprint sensing layer 410. The first light-transmitting films LT1 can be spaced apart from each other. The first light-transmitting films LT1 can be arranged at a first spacing in a first direction (X-axis direction) and at a second spacing in a second direction (Y-axis direction). The first spacing can be, but is not necessarily limited to, being equal to the second spacing. For example, the first light-transmitting films LT1 can be arranged at approximately 4 μm intervals in the first direction (X-axis direction) and the second direction (Y-axis direction). However, it will be understood that this disclosure is not limited thereto.

[0113] The width of the first light-transmitting film LT1 may be, but is not limited to, approximately 1 μm to 2 μm. The width of the first light-transmitting film LT1 may be its length in a first direction (X-axis direction) or a second direction (Y-axis direction). The length of the first light-transmitting film LT1 in a third direction (Z-axis direction) may be several μm (e.g., 2 μm to 15 μm) or greater. For example, the length of the first light-transmitting film LT1 in a third direction (Z-axis direction) may be 5 μm or greater. The first light-transmitting film LT1 may have a cylindrical, elliptical, or polygonal shape such as a square prism.

[0114] The first transparent film LT1 can be formed from an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin and polyimide resin.

[0115] The second light-transmitting film LT2 can be disposed on the first light-transmitting film LT1. The second light-transmitting film LT2 can be disposed on the upper surface and at least two opposite side surfaces of each of the first light-transmitting films LT1. The second light-transmitting film LT2 can be disposed on the planarization layer PLA between the first light-transmitting films LT1.

[0116] The second transparent film LT2 can be made of a different material than the first transparent film LT1. The refractive index of the second transparent film LT2 can be substantially equal to the refractive index of the first transparent film LT1. Optionally, the second transparent film LT2 can have a lower refractive index than the first transparent film LT1. The second transparent film LT2 can be formed as an inorganic film. To make the refractive index of the second transparent film LT2 substantially equal to or less than the refractive index of the first transparent film LT1, the second transparent film LT2 can be made of a silicon oxynitride layer or a silicon oxide layer.

[0117] A light-blocking film LS can be disposed between first light-transmitting films LT1. The light-blocking film LS can be disposed between one of the first light-transmitting films LT1 that are adjacent to each other along a first direction (X-axis direction). Additionally, the light-blocking film LS can be disposed between one of the first light-transmitting films LT1 that are adjacent to each other along a second direction (Y-axis direction).

[0118] Since the second light-transmitting film LT2 is disposed on the side surface of each of the first light-transmitting films LT1, the side surface of the light-blocking film LS can be at least partially surrounded by the second light-transmitting film LT2. Additionally, the second light-transmitting film LT2 can be disposed on the lower surface of the light-blocking film LS. The upper surfaces of the second light-transmitting film LT2 and the upper surfaces of the light-blocking film LS can be flat.

[0119] The width of the light-blocking film LS can be, but is not limited to, approximately 1 μm to 1.5 μm. The width of the light-blocking film LS can be the length of the light-blocking film LS in a first direction (X-axis direction) or a second direction (Y-axis direction).

[0120] The width of the second light-transmitting film LT2 may be, but is not limited to, approximately 0.5 μm to 1 μm. The width of the second light-transmitting film LT2 may be the length of the second light-transmitting film LT2 disposed between the first light-transmitting film LT1 and the light-blocking film LS in a first direction (X-axis direction) or a second direction (Y-axis direction).

[0121] Light-blocking films (LS) can be formed from photosensitive resins capable of blocking light. For example, light-blocking films (LS) can include inorganic or organic black pigments such as carbon black.

[0122] Each of the openings OA in the light guide layer 420 can be defined as a region without the light-blocking film LS, and the light-blocking region LSA can be defined as a region with the light-blocking film LS. A first light-transmitting film LT1 and a second light-transmitting film LT2 are disposed in each of the openings OA. Since the photosensitive element PD is superimposed on the multiple openings OA in the third direction (Z-axis direction), light can be incident on the photosensitive element PD of the sensor pixel SP through the openings OA.

[0123] A transparent adhesive member 430 can be disposed on the light guide layer 420. The transparent adhesive member 430 can be attached to the upper surface of the light guide layer 420 and the lower surface of the display panel 100. The refractive index of the transparent adhesive member 430 can be higher than the refractive index of the first light-transmitting film LT1. Figures 6 to 8 In this context, the refraction of light at the interface between the transparent adhesive member 430 and the first light-transmitting film LT1 is not considered.

[0124] Figures 6 to 8 It shows the basis Figure 5 An exemplary view of the light propagation path with the refractive index of the first and second transparent films.

[0125] Figure 6 The path of light incident on the opening OA of the light guide layer 420 is shown when the refractive index of the first light-transmitting film LT1 is substantially equal to the refractive index of the second light-transmitting film LT2. Figure 7 The path of light incident on the opening OA of the light guide layer 420 is shown when the refractive index of the first light-transmitting film LT1 is higher than that of the second light-transmitting film LT2. Figure 8 The path of light incident on the opening OA of the light guide layer 420 is shown when the refractive index of the first light-transmitting film LT1 is lower than that of the second light-transmitting film LT2.

[0126] Reference Figure 6When the refractive index of the first transparent film LT1 is substantially equal to the refractive index of the second transparent film LT2, light L entering the opening OA can be unrefracted and incident on the photosensitive element PD of the fingerprint sensing layer 410. If the light L entering the opening OA has a first angle θ1 or smaller, then light L can pass through the opening OA. The angle of the light L entering the opening OA is measured from the normal VL to the upper surface of the opening OA. Therefore, noise light incident on the photosensitive element PD through the opening OA can be suppressed.

[0127] Reference Figure 7 When the refractive index of the first transparent film LT1 is higher than that of the second transparent film LT2, light L entering the opening OA can be refracted at the boundary between the transparent adhesive member 430 and the second transparent film LT2, as well as at the boundary between the first transparent film LT1 and the second transparent film LT2. For example, when the angle of light L entering the opening OA is a second angle θ2 that is larger than the first angle θ1, light L can be refracted at the boundary between the transparent adhesive member 430 and the second transparent film LT2, at the boundary between the second transparent film LT2 and the first transparent film LT1, and at both the first transparent film LT1 and the second transparent film LT2. Therefore, light L entering the opening OA at the second angle θ2 can pass through the opening OA. Therefore, with Figure 6 Compared to the exemplary embodiments, it is possible to add Figure 7 The amount of light L incident on the photosensitive element PD through the opening OA in an exemplary embodiment.

[0128] Reference Figure 8 When the refractive index of the first transparent film LT1 is lower than that of the second transparent film LT2, the light L entering the opening OA can be refracted at the boundary between the transparent adhesive member 430 and the second transparent film LT2, as well as at the boundary between the first transparent film LT1 and the second transparent film LT2. For example, when the angle of the light L entering the opening OA is a first angle θ1, the light L can be refracted at the boundary between the transparent adhesive member 430 and the second transparent film LT2, at the boundary between the second transparent film LT2 and the first transparent film LT1, and at both the first transparent film LT1 and the second transparent film LT2. Therefore, the light L entering the opening OA at the first angle θ1 can pass through the opening OA without passing through it.

[0129] Given the above, when the refractive index of the first transparent film LT1 is substantially equal to the refractive index of the second transparent film LT2, the amount of light incident on the photosensitive element PD that would be sensed as noise can be reduced. Therefore, fingerprints of finger F can be identified more accurately. Furthermore, when the refractive index of the first transparent film LT1 is higher than that of the second transparent film LT2, the amount of light incident on the photosensitive element PD through the opening OA can be increased.

[0130] Figure 9 This is a graph showing the transmittance of the opening relative to the angle of incidence of light for different refractive indices of the second transparent film.

[0131] exist Figure 9 In the graph shown, the x-axis represents the angle of incidence, and the y-axis represents the transmittance of the opening OA. The angle of incidence refers to the angle at which light enters the opening OA. The transmittance of the opening OA refers to the ratio of light passing through the opening OA to light entering the opening OA.

[0132] exist Figure 9 In the graphs, curve C1 shows an example where the width of the first transparent film LT1 is 2 μm, the width of the second transparent film LT2 is omitted, and the width of the light-blocking film LS is 2 μm. Curves C2 to C5 show examples where the width of the first transparent film LT1 is 2 μm, the width of the second transparent film LT2 is 1 μm, and the width of the light-blocking film LS is 1 μm. Each of curves C1 to C5 shows an example where the refractive index of the first transparent film LT1 is 1.5. Curve C2 shows an example where the refractive index of the second transparent film LT2 can be 1.5, and curve C3 shows an example where the refractive index of the second transparent film LT2 can be 1.4. Curve C4 shows an example where the refractive index of the second transparent film LT2 can be 1.6, and curve C5 shows an example where the refractive index of the second transparent film LT2 can be 1.7.

[0133] Reference Figure 9 In the example indicated by the first curve C1, light with an incident angle of approximately 13 degrees or less can pass through the opening OA. Additionally, in the example indicated by the first curve C1, the transmittance can be 20% or less at an incident angle of 0 degrees.

[0134] In the example indicated by the second curve C2, the light transmittance is 43% at an incident angle of 0 degrees, and the light transmittance can be 10% or greater at incident angles of 0 to 13 degrees. Therefore, in the example indicated by the second curve C2, the transmittance of the opening OA can be improved compared to the example indicated by the first curve C1. Furthermore, in the example indicated by the second curve C2, since light with an incident angle of approximately 17 degrees or less passes through the opening OA, the increase in noise light incident on the photosensitive element PD can be suppressed.

[0135] In the example indicated by the third curve C3, the light transmittance is 43% at an incident angle of 0 degrees, and the light transmittance can be 20% or greater at incident angles from 0 to 17 degrees. Therefore, in the example indicated by the third curve C3, the transmittance of the opening OA can be increased compared to the example indicated by the second curve C2. However, in the example indicated by the third curve C3, the transmittance at an incident angle of 20 degrees is 8%, so the incident angle of light passing through the opening OA can be increased compared to the example indicated by the second curve C2.

[0136] In the example indicated by the fourth curve C4, since the light transmittance is 10% or greater at an incident angle of 25 degrees, this increases the noise light incident on the photosensitive element PD.

[0137] In the example indicated by the fifth curve C5, since the light transmittance is 25% or greater at an incident angle of 25 degrees, this increases the noise light incident on the photosensitive element PD.

[0138] In view of the above, as in the example indicated by the second curve C2, even if the width of the opening OA is longer than the width of the light-blocking region LSA, when the refractive index of the first light-transmitting film LT1 is substantially equal to the refractive index of the second light-transmitting film LT2, the transmittance of light in the opening OA can be increased, and noise light incident on the photosensitive element PD can be suppressed.

[0139] Additionally, as in the example indicated by the third curve C3, when the width of the opening OA is greater than the width of the light-blocking region LSA and the refractive index of the first light-transmitting film LT1 is greater than the refractive index of the second light-transmitting film LT2, the light transmittance in the opening OA can be increased.

[0140] Figure 10 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A.

[0141] Figure 10 Exemplary embodiments and Figure 5 The exemplary embodiment differs in that a third light-transmitting film LT3 is further disposed between the upper surface of the first light-transmitting film LT1 and the second light-transmitting film LT2. Therefore, light will be primarily transmitted through... Figure 5 To describe the differences shown Figure 10 And will not be described here. Figure 10 To the extent that the elements shown are present, it can be assumed that these elements are at least related to the elements described herein. Figure 5 Or similar to the components described elsewhere in the instruction manual.

[0142] Reference Figure 10A third transparent film LT3 can be disposed on the first transparent film LT1. The third transparent film LT3 can be made of a material different from the materials of the first transparent film LT1 and the second transparent film LT2. The third transparent film LT3 can be an organic film or an inorganic film. For example, when the third transparent film LT3 is an organic film, it can be a photoresist. When the third transparent film LT3 is an inorganic film, it can be a transparent conductive oxide (TCO). For example, when the third transparent film LT3 is an inorganic film, it can be indium tin oxide (ITO) or indium zinc oxide (IZO).

[0143] The refractive index of the third transparent film LT3 can be approximately equal to the refractive index of the first transparent film LT1. In this case, as referenced above... Figure 6 and Figure 9 The described method can reduce noise light incident on the photosensitive element PD through the opening OA.

[0144] Optionally, the third transparent film LT3 may have a lower refractive index than the first transparent film LT1. In this case, as referenced above... Figure 7 and Figure 9 The description suggests that this can increase the amount of light incident on the photosensitive element PD through the opening OA.

[0145] Figure 11 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A.

[0146] Figure 11 Exemplary embodiments and Figure 5 The exemplary embodiment differs in that the color filter CF is disposed on the second light-transmitting film LT2 and the light-blocking film LS. Therefore, light will be primarily transmitted through... Figure 5 To describe the differences shown Figure 11 And will not be described here. Figure 11 To the extent that the elements shown are present, it can be assumed that these elements are at least related to the elements described herein. Figure 5 Or similar to the components described elsewhere in the instruction manual.

[0147] Reference Figure 11 A color filter CF can allow light of a specific wavelength band to pass through it. For example, a color filter CF could be a green color filter that allows light of the 490nm to 570nm wavelength band corresponding to green light to pass through it. Alternatively, a color filter CF could be a cyan color filter that allows light of the 490nm to 570nm wavelength band and light of the 450nm to 480nm wavelength band corresponding to blue light to pass through it.

[0148] Since the light emitted from the display panel 100 does not include infrared light, infrared light is considered external noise light. Therefore, infrared light can be blocked. When color filters CF, such as green and cyan color filters, are placed on the second light-transmitting film LT2 and the light-blocking film LS, infrared light does not pass through the color filters CF, thus blocking infrared light incident on the photosensitive element PD.

[0149] Figure 12 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A.

[0150] Figure 12 Exemplary embodiments and Figure 5 The exemplary embodiment differs in that the length L2 of the light-blocking film LS in the third direction (Z-axis direction) is smaller than the length L1 of the first light-transmitting film LT1 in the third direction (Z-axis direction). Therefore, it will mainly be through Figure 5 To describe the differences shown Figure 12 And will not be described here. Figure 12 To the extent that the elements shown are present, it can be assumed that these elements are at least related to the elements described herein. Figure 5 Or similar to the components described elsewhere in the instruction manual.

[0151] Reference Figure 12 When the length L2 of the light-blocking film LS in the third direction (Z-axis direction) is smaller than the length L1 of the first light-transmitting film LT1 in the third direction (Z-axis direction), the transparent adhesive member 430 can be disposed on the upper surface of the light-blocking film LS and the side surface of the second light-transmitting film LT2. When the refractive index of the first light-transmitting film LT1 is substantially equal to the refractive index of the second light-transmitting film LT2, or when the refractive index of the first light-transmitting film LT1 is greater than the refractive index of the second light-transmitting film LT2, the refractive index of the transparent adhesive member 430 can be greater than the refractive index of the second light-transmitting film LT2. Therefore, the angle of refraction of light L incident on the side surface of the second light-transmitting film LT2 can be greater than the angle of incidence (the angle of incidence refers to the angle at which light is incident from the top onto the surface). For example, as... Figure 12 As shown, light entering the opening OA at a second angle larger than the first angle θ1 may not pass through the opening OA. Therefore, the amount of light L that would be sensed as noise among the light incident on the photosensitive element PD can be reduced.

[0152] Figure 13 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A.

[0153] Figure 13 Exemplary embodiments and Figure 12 The exemplary embodiment differs in that a third light-transmitting film LT3 is further disposed between the upper surface of the first light-transmitting film LT1 and the second light-transmitting film LT2. Therefore, light will be primarily transmitted through... Figure 12 To describe the differences shown Figure 13 And will not be described here. Figure 13 To the extent that the elements shown are present, it can be assumed that these elements are at least related to the elements described herein. Figure 12 Or similar to the components described elsewhere in the instruction manual.

[0154] Reference Figure 13 A third transparent film LT3 can be disposed on the first transparent film LT1. The third transparent film LT3 can be made of a material different from the materials of the first transparent film LT1 and the second transparent film LT2. The third transparent film LT3 can be an organic film or an inorganic film. For example, when the third transparent film LT3 is an organic film, it can be a photoresist. When the third transparent film LT3 is an inorganic film, it can be a transparent conductive oxide (TCO). For example, when the third transparent film LT3 is an inorganic film, it can be indium tin oxide (ITO) or indium zinc oxide (IZO).

[0155] The refractive index of the third transparent film LT3 can be approximately equal to the refractive index of the first transparent film LT1. In this case, as referenced above... Figure 6 and Figure 9 The described method can reduce noise light incident on the photosensitive element PD through the opening OA.

[0156] Optionally, the third transparent film LT3 may have a lower refractive index than the first transparent film LT1. In this case, as referenced above... Figure 7 and Figure 9 The description suggests that this can increase the amount of light incident on the photosensitive element PD through the opening OA.

[0157] Figure 14 It is shown Figure 3 An enlarged cross-sectional view of an example fingerprint sensor in region A.

[0158] Figure 14 Exemplary embodiments and Figure 12 The exemplary embodiment differs in that the color filter CF is disposed on the second light-transmitting film LT2 and the light-blocking film LS. Therefore, light will be primarily transmitted through... Figure 12 To describe the differences shown Figure 14 And will not be described here. Figure 14 To the extent that the elements shown are present, it can be assumed that these elements are at least related to the elements described herein. Figure 12 Or similar to the components described elsewhere in the instruction manual.

[0159] Reference Figure 14A color filter CF can allow light of a specific wavelength band to pass through it. For example, a color filter CF could be a green color filter that allows light of the 490nm to 570nm wavelength band corresponding to green light to pass through it. Alternatively, a color filter CF could be a cyan color filter that allows light of the 490nm to 570nm wavelength band and light of the 450nm to 480nm wavelength band corresponding to blue light to pass through it.

[0160] Since the light emitted from the display panel 100 does not include infrared light, infrared light is considered external noise light. Therefore, infrared light can be blocked. When color filters CF, such as green and cyan color filters, are placed on the second light-transmitting film LT2 and the light-blocking film LS, infrared light does not pass through the color filters CF, thus blocking infrared light incident on the photosensitive element PD.

[0161] Figure 15 This is a flowchart illustrating a method for manufacturing a fingerprint sensor according to an exemplary embodiment of the present disclosure. Figures 16 to 21 It is shown Figure 15 A cross-sectional view of a method for manufacturing a fingerprint sensor.

[0162] In the following text, reference will be made to Figures 16 to 21 A method for manufacturing a fingerprint sensor according to an exemplary embodiment is described in detail.

[0163] First, a fingerprint sensing layer 410 comprising a second thin-film transistor ST2 and a photosensitive element PD is formed. Figure 15 Step S110).

[0164] Reference Figure 16 Inorganic materials are deposited on the fingerprint sensor substrate FSUB to form a buffer layer BF.

[0165] The second active layer ACT2 of the second thin film transistor ST2 is formed on the buffer layer BF using a photolithography process.

[0166] Inorganic material is deposited on the second active layer ACT2 of the second thin film transistor ST2 to form the second gate insulating layer GI2.

[0167] The second gate electrode G2 and the first fingerprint capacitor electrode FCE1 of the second thin-film transistor ST2 can be formed on the second gate insulating layer GI2 using a photolithography process. In doing so, since the second gate electrode G2 of the second thin-film transistor ST2 is used as a mask to etch the second gate insulating layer GI2, the second gate insulating layer GI2 can be positioned between the second gate electrode G2 and the second active layer ACT2 of the second thin-film transistor ST2, and between the first fingerprint capacitor electrode FCE1 and the buffer layer BF. Furthermore, since the second active layer ACT2 of the second thin-film transistor ST2 is not completely covered by the second gate insulating layer GI2, but is partially exposed and doped with impurities or ions, the doped portion of the second active layer ACT2 of the second thin-film transistor ST2 can have the desired conductivity. Therefore, a second source electrode S2 and a second drain electrode D2 with the desired conductivity can be formed in the second thin-film transistor ST2.

[0168] Inorganic materials are deposited on the second gate electrode G2, the second source electrode S2, the second drain electrode D2, and the first fingerprint capacitor electrode FCE1 of the second thin film transistor ST2 to form a first insulating layer INS1.

[0169] The first sensing electrode PCE and the second fingerprint capacitor electrode FCE2 of the photosensitive element PD are formed on the first insulating layer INS1 using photolithography. The sensing semiconductor layer PSEM and the second sensing electrode PAE are formed on the first sensing electrode PCE using photolithography.

[0170] Inorganic material is deposited on the photosensitive element PD and the second fingerprint capacitor electrode FCE2 to form a second insulating layer INS2.

[0171] The source contact hole SCT, drain contact hole DCT, first sensing contact hole RCT1, and second sensing contact hole RCT2 are formed in the second insulating layer INS2 via photolithography. The source contact hole SCT and drain contact hole DCT can be formed by removing the first insulating layer INS1 and the second insulating layer INS2. The first sensing contact hole RCT1 and the second sensing contact hole RCT2 can be formed by removing the second insulating layer INS2.

[0172] A first connection electrode CE1, a second connection electrode CE2, and a third connection electrode CE3 can be formed on the second insulating layer INS2 via photolithography. The first connection electrode CE1 can be connected to the second source electrode S2 of the second thin-film transistor ST2 via the source contact hole SCT. The second connection electrode CE2 can be connected to the second drain electrode D2 of the second thin-film transistor ST2 via the drain contact hole DCT, and can also be connected to the first sensing electrode PCE via the first sensing contact hole RCT1. The third connection electrode CE3 can be connected to the second sensing electrode PAE via the second sensing contact hole RCT2.

[0173] Inorganic material can be deposited on the first connecting electrode CE1, the second connecting electrode CE2, and the third connecting electrode CE3 to form a third insulating layer INS3. The third insulating layer INS3 can be omitted.

[0174] Organic material is deposited on the third insulating layer INS3 to form a planarization layer PLA.

[0175] Secondly, a light-transmitting layer LT is formed on the fingerprint sensing layer 410, and a mask pattern MS is formed on the light-transmitting layer LT. Figure 15 Step S120).

[0176] Reference Figure 17 An organic material is deposited on the fingerprint sensing layer 410 to form a light-transmitting layer LT. The length of the light-transmitting layer LT in the third direction (Z-axis direction) can be several μm (e.g., 2 μm to 15 μm) or greater. For example, the length of the light-transmitting layer LT in the third direction (Z-axis direction) can be 5 μm or greater. The light-transmitting layer LT can be an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0177] A mask pattern MS is formed by depositing organic or inorganic materials on a light-transmitting layer LT. The mask patterns MS can be arranged spaced apart from each other. The mask patterns MS can be arranged at a first spacing in a first direction (X-axis direction) and at a second spacing in a second direction (Y-axis direction). The first spacing can be equal to the second spacing.

[0178] Each of the mask patterns MS can be an organic film such as a photoresist. Alternatively, the mask pattern MS can be an inorganic film such as a transparent conductive oxide (such as indium tin oxide (ITO) and indium zinc oxide (IZO)) or aluminum (Al).

[0179] Third, the first transparent film LT1 is formed by etching the transparent layer LT. Figure 15 Step S130 in the process.

[0180] Reference Figure 18A first transparent film LT1 is formed by dry etching the transparent layer LT not covered by the mask pattern MS. The first transparent films LT1 can be spaced apart from each other. The first transparent films LT1 can be arranged at a first spacing in a first direction (X-axis direction) and at a second spacing in a second direction (Y-axis direction). The first spacing can be equal to the second spacing.

[0181] Fourth, such as Figure 19 As shown, the mask pattern MS is removed by a stripping or etching process. Figure 15 Step S140 in the process.

[0182] Fifth, a second light-transmitting film LT2 is formed on the first light-transmitting film LT1. Figure 15 Step S150 in the process.

[0183] Reference Figure 20 Inorganic material is deposited on the first light-transmitting film LT1 to form the second light-transmitting film LT2. The second light-transmitting film LT2 can be formed on the upper and side surfaces of each of the first light-transmitting films LT1. In addition, the second light-transmitting film LT2 can be formed on the planarization layer PLA located between the first light-transmitting films LT1 of the fingerprint sensing layer 410. Because the second light-transmitting film LT2 has good step coverage, it can be extended continuously without breaking.

[0184] On the other hand, since the first transparent film LT1 is relatively long in the third direction (Z-axis), if the first transparent film is over-etched, the width of the first transparent film LT1 can be smaller than the width of the mask pattern MS. As the first transparent film LT1 becomes narrower, the light-blocking film LS becomes wider, thus reducing the transmittance of the opening OA. Therefore, the reduced width of the first transparent film LT1 can be compensated for, and thus the second transparent film LT2 is formed.

[0185] Sixth, a light-blocking film LS is formed between the first light-transmitting film LT1. Figure 15 Step S160 in the process.

[0186] Reference Figure 21 Organic material is deposited on the second transparent film LT2 to form a light-blocking film, and then the light-blocking film is etched to form a light-blocking film LS. The side surface of the light-blocking film LS may be at least partially surrounded by the second transparent film LT2. In addition, the second transparent film LT2 may be disposed on the lower surface of the light-blocking film LS. The upper surfaces of the second transparent film LT2 and the upper surfaces of the light-blocking film LS may be flat.

[0187] like Figures 15 to 21As shown, a second light-transmitting film LT2 is formed on the first light-transmitting film LT1. By doing so, even if the width of each of the first light-transmitting films LT1 is reduced due to over-etching during the etching process, the width of the second light-transmitting film LT2 can compensate for the reduced width of each of the first light-transmitting films LT1. Therefore, a decrease in the light transmittance of the opening OA can be prevented.

[0188] Figure 22 This is a flowchart illustrating a method for manufacturing a fingerprint sensor according to an exemplary embodiment of the present disclosure. Figures 23 to 24 It is shown Figure 22 A cross-sectional view of a method for manufacturing a fingerprint sensor.

[0189] In the following text, reference will be made to Figures 22 to 24 A method for manufacturing a fingerprint sensor 400 according to an exemplary embodiment is described in detail.

[0190] In addition to forming a third transparent film LT3 instead of a mask pattern MS, Figure 22 Steps S210 to S230 and Figure 15 Steps S110 to S130 are basically the same.

[0191] Since the third transparent films LT3 serve as masks, they are substantially identical to the mask pattern MS. It will be noted that the third transparent films LT3 may include materials capable of transmitting light. For example, each of the third transparent films LT3 may include an organic film such as a photoresist. Alternatively, each of the third transparent films LT3 may include an inorganic film such as a transparent conductive oxide (e.g., indium tin oxide (ITO) and indium zinc oxide (IZO)).

[0192] Reference Figure 22 A second light-transmitting film LT2 is formed on the first light-transmitting film LT1 and the third light-transmitting film LT3. Figure 22 Step S240 in the process.

[0193] A second light-transmitting film LT2 can be formed on the side surface of each of the first light-transmitting films LT1 and on the top and side surfaces of each of the third light-transmitting films LT3. Additionally, the second light-transmitting film LT2 can be formed on the planarization layer PLA located between the first light-transmitting films LT1 of the fingerprint sensing layer 410. Because the second light-transmitting film LT2 has good step coverage, it can extend continuously without breaking.

[0194] Reference Figure 24 A light-blocking film LS is formed between the first light-transmitting film LT1. Figure 22 Step S250 in the process.

[0195] Organic material is deposited on the second transparent film LT2 to form a light-blocking film, and then the light-blocking film is etched to form a light-blocking film LS. The side surface of the light-blocking film LS may be at least partially surrounded by the second transparent film LT2. In addition, the second transparent film LT2 may be disposed on the lower surface of the light-blocking film LS. The upper surfaces of the second transparent film LT2 and the upper surfaces of the light-blocking film LS may be flat.

[0196] like Figures 22 to 24 As shown, a second light-transmitting film LT2 is formed on the third light-transmitting film LT3 without removing the third light-transmitting film LT3. Therefore, the process of removing the third light-transmitting film LT3 can be omitted. Thus, the efficiency of the manufacturing process of the fingerprint sensor 400 can be improved.

[0197] In the fingerprint sensor, the method of manufacturing the fingerprint sensor, and the display device including the fingerprint sensor according to exemplary embodiments of the present invention, a second light-transmitting film is disposed between each of the first light-transmitting films and the light-blocking film, and the refractive index of the first light-transmitting film is substantially equal to the refractive index of the second light-transmitting film. In this way, light incident on the photosensitive element that would be sensed as noise can be reduced, thereby improving the accuracy of fingerprint recognition.

[0198] In the fingerprint sensor, the method of manufacturing the fingerprint sensor, and the display device including the fingerprint sensor according to exemplary embodiments of the present invention, the refractive index of the first light-transmitting film is higher than that of the second light-transmitting film. Therefore, the amount of light incident on the photosensitive element through the opening in the light guide layer can be increased.

[0199] In the fingerprint sensor, the method of manufacturing the fingerprint sensor, and the display device including the fingerprint sensor according to exemplary embodiments of the present invention, infrared light, which is noise light incident on the photosensitive element, can be blocked by color filters such as green and cyan color filters provided on the second light-transmitting film and the light-blocking film.

[0200] In the fingerprint sensor, the method of manufacturing the fingerprint sensor, and the display device including the fingerprint sensor according to exemplary embodiments of the present invention, since the second light-transmitting film is formed on the first light-transmitting film, even if the width of each of the first light-transmitting films is reduced due to over-etching during the etching process, the reduced width of each of the first light-transmitting films can be compensated by the width of the second light-transmitting film. Therefore, a decrease in the light transmittance of the opening can be prevented.

[0201] Although the inventive concept has been specifically shown and described with reference to exemplary embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope of the inventive concept.

Claims

1. A fingerprint sensor, the fingerprint sensor comprising: Photosensitive layer, including photosensitive element; as well as A light guide layer is disposed on the photosensitive layer. The light guide layer includes: a plurality of first light-transmitting films; a light-blocking film disposed between adjacent first light-transmitting films; and a second light-transmitting film disposed between each of the plurality of first light-transmitting films and the light-blocking film. The second light-transmitting film is disposed on the upper surface and side surface of each of the plurality of first light-transmitting films. The second light-transmitting film is disposed on the lower surface and side surface of the light-blocking film. Wherein, the second light-transmitting film is a single continuous film, and The second light-transmitting film is neither located below the plurality of first light-transmitting films nor above the light-blocking film.

2. The fingerprint sensor according to claim 1, wherein, The refractive index of each of the plurality of first transparent films is equal to the refractive index of the second transparent film.

3. The fingerprint sensor according to claim 1, wherein, The refractive index of each of the plurality of first transparent films is greater than the refractive index of the second transparent film.

4. The fingerprint sensor according to claim 2, wherein, Each of the plurality of first transparent films is an organic film, and the second transparent film is an inorganic film.

5. The fingerprint sensor according to claim 3, wherein, Each of the plurality of first transparent films is an organic film, and the second transparent film is an inorganic film.

6. The fingerprint sensor according to claim 1, wherein, One of the plurality of first light-transmitting films has a length greater than that of the light-blocking film in a specific direction, and the light-blocking film is disposed between adjacent first light-transmitting films in another specific direction.

7. The fingerprint sensor according to claim 1, further comprising: A third light-transmitting film is disposed on the upper surface of each of the plurality of first light-transmitting films and is covered by the second light-transmitting film.

8. The fingerprint sensor according to claim 7, wherein, The refractive index of each of the plurality of first transparent films is equal to the refractive index of the third transparent film.

9. The fingerprint sensor according to claim 7, wherein, The refractive index of each of the plurality of first transparent films is greater than the refractive index of the third transparent film.

10. The fingerprint sensor according to claim 7, wherein, The third transparent film is made of photoresist or transparent conductive oxide.

11. The fingerprint sensor according to claim 1, wherein, The height of the light-blocking film is smaller than the height of each of the plurality of first light-transmitting films.

12. The fingerprint sensor according to claim 11, further comprising: A transparent adhesive component is disposed on the light-blocking film and has a refractive index greater than that of each of the plurality of first light-transmitting films.

13. The fingerprint sensor according to claim 1, further comprising: A color filter is disposed on the second light-transmitting film and the light-blocking film.

14. The fingerprint sensor according to claim 13, wherein, The color filter transmits light in the wavelength band corresponding to green light, or transmits light in the wavelength band corresponding to green light and light in the wavelength band corresponding to blue light.

15. A method for manufacturing a fingerprint sensor, the method comprising the following steps: A photosensitive layer including a photosensitive element is formed, in which a current is sensed to flow in response to incident light; An organic material is formed on the photosensitive layer to form a light-transmitting layer; A mask pattern is formed on the light-transmitting layer; The light-transmitting layer is etched according to the mask pattern to form a plurality of first light-transmitting films; Remove the mask pattern; An inorganic material is formed on the first light-transmitting film to form a second light-transmitting film; as well as An organic material is formed on the second light-transmitting film to form a light-blocking film. The second light-transmitting film is disposed on the upper surface and side surface of each of the plurality of first light-transmitting films. The second light-transmitting film is disposed on the lower surface and side surface of the light-blocking film. Wherein, the second light-transmitting film is a single continuous film, and The second light-transmitting film is neither located below the plurality of first light-transmitting films nor above the light-blocking film.

16. The method according to claim 15, wherein, The step of forming the mask pattern on the light-transmitting layer includes: The mask pattern is arranged in a first direction and a second direction intersecting the first direction.

17. The method according to claim 15, wherein, The step of etching the light-transmitting layer according to the mask pattern to form the plurality of first light-transmitting films includes: Each of the plurality of first light-transmitting films is arranged in a first direction and in a second direction intersecting the first direction.

18. The method according to claim 15, wherein, The step of forming an inorganic material on the first light-transmitting film to form the second light-transmitting film includes: The inorganic material is formed on the upper and side surfaces of each of the first light-transmitting films and on the photosensitive layer between adjacent first light-transmitting films in the plurality of first light-transmitting films.

19. A display device, the display device comprising: A display panel includes a display area and a non-display area that at least partially surrounds the display area, the display area including a plurality of pixels configured to display an image; as well as A fingerprint sensor is disposed within the display area of ​​the display panel. The fingerprint sensor includes a photosensitive element and a light guide layer disposed on the photosensitive element. The light guide layer includes: a plurality of first light-transmitting films; a light-blocking film disposed between adjacent first light-transmitting films; and a second light-transmitting film disposed between each of the plurality of first light-transmitting films and the light-blocking film. The second light-transmitting film is disposed on the upper surface and side surface of each of the plurality of first light-transmitting films. The second light-transmitting film is disposed on the lower surface and side surface of the light-blocking film. Wherein, the second light-transmitting film is a single continuous film, and The second light-transmitting film is neither located below the plurality of first light-transmitting films nor above the light-blocking film.

20. The display device according to claim 19, wherein, The refractive index of each of the plurality of first transparent films is equal to the refractive index of the second transparent film.

21. The display device according to claim 19, wherein, The refractive index of each of the plurality of first transparent films is greater than the refractive index of the second transparent film.

22. The display device according to claim 19, wherein, Each of the plurality of first transparent films is an organic film, and the second transparent film is an inorganic film.

23. The display device according to claim 19, wherein, One of the plurality of first light-transmitting films has a length greater than that of the light-blocking film in a specific direction, and the light-blocking film is disposed between adjacent first light-transmitting films in another specific direction.

24. The display device according to claim 19, wherein, The height of the light-blocking film is smaller than the height of each of the plurality of first light-transmitting films.

25. The display device according to claim 19, further comprising: A color filter is disposed on the second light-transmitting film and the light-blocking film.

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