Substrate processing apparatus

Abstract

A substrate processing apparatus having improved emission efficiency and processing reproducibility includes: a plurality of reactors; a plurality of emission ports respectively connected to the plurality of reactors and arranged symmetrically about the reactors; and a plurality of emission channels connected to the plurality of emission ports, wherein each emission channel includes a plurality of emission channels, including a first channel extending in a first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of emission channels extend through a component supporting at least a portion of the plurality of reactors.

Description

Technical Field

[0001] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved batch reactor discharge structure. Background Technology

[0002] Multi-reactor chambers offer advantages such as high hourly yields and precise control over individual substrates. However, on the other hand, multi-reactor chambers present a challenge: achieving symmetry in the thickness uniformity of the films deposited on the substrate is difficult. For example, as semiconductor devices become smaller, it is necessary to deposit films on the substrate with concentric film profiles to ensure compatibility with subsequent processes. Summary of the Invention

[0003] One or more embodiments include a substrate processing apparatus capable of improving the deviation of the discharge flow to achieve good thickness uniformity of the thin film.

[0004] One or more embodiments include a substrate processing apparatus that can further simplify the external structure of the cavity by forming a reactor discharge channel in the cavity cover and cavity wall, and can make it lighter and easier to maintain.

[0005] Additional aspects will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0006] According to one or more embodiments, a substrate processing apparatus includes: a reactor; a support portion configured to support at least a portion of the reactor; and a first discharge channel and a second discharge channel communicating with a reaction space of the reactor, wherein each of the first discharge channel and the second discharge channel may extend to surround a portion of the reaction space.

[0007] According to an example of a substrate processing apparatus, the first discharge channel may extend through a first portion of the support portion.

[0008] According to another example of a substrate processing apparatus, the substrate processing apparatus may further include a discharge space surrounding a reaction space, and a first discharge port between the discharge space and a first discharge channel.

[0009] According to another example of a substrate processing apparatus, the substrate processing apparatus may also include a first seal between the first discharge port and the support portion.

[0010] According to another example of a substrate processing apparatus, the substrate processing apparatus may further include a first channel cover disposed between a first discharge port and a support portion, and the first discharge channel may extend between the first channel cover and the support portion.

[0011] According to another example of a substrate processing apparatus, the substrate processing apparatus may also include a second seal between the first discharge port and the first channel cover.

[0012] According to another example of a substrate processing apparatus, a second discharge channel may extend through a second portion of the support portion that is different from the first portion.

[0013] According to another example of a substrate processing apparatus, the support portion may also include the junction of the first discharge channel and the second discharge channel.

[0014] According to another example of a substrate processing apparatus, the joint point can be arranged at the corner of the support portion.

[0015] According to another example of a substrate processing apparatus, the junction may include a T-shaped or T-like channel structure.

[0016] According to another example of a substrate processing apparatus, the substrate processing apparatus may include a partition below a support portion and a transport channel communicating with a first discharge channel and a second discharge channel, wherein the transport channel may extend through a portion of the partition.

[0017] According to another example of a substrate processing apparatus, the substrate processing apparatus may also include a second channel cover disposed between a support portion and a separator.

[0018] According to another example of a substrate processing apparatus, the transport channel can extend between a second channel cover and a separator.

[0019] According to another example of a substrate processing apparatus, the diameter of the first discharge channel may be half the diameter of the transport channel.

[0020] According to one or more embodiments, a substrate processing apparatus includes a first reactor, a second reactor, a support configured to support at least a portion of the first reactor and at least a portion of the second reactor, a first discharge channel communicating with a first reaction space of the first reactor, a second discharge channel communicating with the first reaction space, a third discharge channel communicating with the second reaction space of the second reactor, and a fourth discharge channel communicating with the second reaction space, wherein each of the first and second discharge channels may extend to surround at least a portion of the first reaction space, and at least one of the third and fourth discharge channels may extend to surround at least a portion of the second reaction space.

[0021] According to an example of a substrate processing apparatus, a first discharge channel may extend through a first portion of a support portion, a second discharge channel may extend through a second portion of a support portion, a third discharge channel may extend through a third portion of a support portion, and a fourth discharge channel may extend through a fourth portion of a support portion.

[0022] According to another example of a substrate processing apparatus, the first and fourth discharge channels may extend parallel to each other.

[0023] According to another example of a substrate processing apparatus, the second and third discharge channels may extend along the same line.

[0024] According to another example of the substrate processing apparatus, the first and second discharge channels may be joined at the first corner of the support portion, and the third and fourth discharge channels may be joined at the second corner of the support portion.

[0025] According to one or more embodiments, a substrate processing apparatus includes: a plurality of reactors; a plurality of discharge ports respectively connected to the plurality of reactors and arranged symmetrically about the reactors; and a plurality of discharge channels connected to the plurality of discharge ports, wherein each discharge channel includes a plurality of discharge channels, including a first channel extending in a first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of discharge channels may extend through a component supporting at least a portion of the plurality of reactors. Attached Figure Description

[0026] The above and other aspects, features, and advantages of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, wherein:

[0027] Figure 1 This is a view of a substrate processing apparatus according to an embodiment of the present invention;

[0028] Figure 2 This is a view of a substrate processing apparatus according to other embodiments of the present invention;

[0029] Figure 3 yes Figure 2 A plan view of the substrate processing apparatus;

[0030] Figure 4 It is along Figure 3 A cross-sectional view of the substrate processing apparatus taken from line IV-IV';

[0031] Figure 5 It is along Figure 3 A cross-sectional view of the substrate processing apparatus taken by line V-V';

[0032] Figure 6 It is along Figure 3 A cross-sectional view of the substrate processing apparatus taken from line VI-VI';

[0033] Figure 7 These are views of a substrate processing apparatus according to some embodiments of the present invention;

[0034] Figure 8 It is observed from the first direction. Figure 7 The view, and Figure 9 It is observed from the second direction. Figure 7 The view; and

[0035] Figures 10 to 13 This is a view of a substrate processing apparatus according to an embodiment of the present invention. Detailed Implementation

[0036] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only with reference to the accompanying drawings to explain aspects of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. When a statement such as “at least one of” follows a list of elements, the statement modifies the entire list of elements and does not modify the individual elements in the list.

[0037] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0038] In this regard, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art.

[0039] The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit this disclosure. As used herein, the singular forms “a” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It will also be understood that the terms “comprising”, “including”, as used herein, specify the presence of the stated feature, integer, step, process, component, part, and / or group thereof, but do not exclude the presence or addition of one or more other features, integers, steps, processes, components, parts, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0040] It will be understood that although the terms "first," "second," etc., may be used herein to describe various components, parts, regions, layers, and / or portions, these components, parts, regions, layers, and / or portions should not be limited by these terms. These terms do not indicate any order, number, or importance, but are used only to distinguish one component, region, layer, and / or portion from another. Therefore, without departing from the teachings of the embodiments, the first component, component, region, layer, or portion discussed below may be referred to as the second component, component, region, layer, or portion.

[0041] In the following description, embodiments of the present disclosure will be illustrated with reference to the accompanying drawings, in which embodiments of the present disclosure are schematically shown. In the drawings, variations from the illustrated shapes can be expected due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the present disclosure should not be construed as limited to a particular shape in the area shown herein, but may include, for example, shape deviations caused by the manufacturing process.

[0042] Figure 1 This is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention.

[0043] refer to Figure 1 The substrate processing apparatus may include a reactor R, a separator 100, a support portion TLD, a first discharge port 13, a second discharge port 14, a first discharge channel 15, a second discharge channel 16, a conveying channel 18, an external channel EC, and a discharge pump EP.

[0044] The reactor R can be the space in which processing is carried out on an object to be processed, such as a substrate. Although Figure 1 The diagram shows only one reactor, but multiple reactors can be implemented. The reactor provides space for heating, deposition, etching, polishing, ion implantation, and / or other processing on the object to be processed. The reactor can be an open reactor, where the reaction space remains open, or a closed reactor, where the reaction space remains closed.

[0045] For example, reactor R can be configured to perform moving functions, vacuum sealing functions, heating functions, venting functions, and / or other functions for the object to be processed, such that the object is processed in the reactor. For example, the reactor may include a reaction space 51 for processing the object to be processed (such as a substrate) and a venting space 55 for venting gases from the reaction space 51.

[0046] In an alternative embodiment, the discharge space 55 may extend to surround the reaction space 51. In another alternative embodiment, the reactor may include at least one cover structure, and the discharge space 55 and / or the reaction space 51 may be formed through the cover structure. In another alternative embodiment, the reactor may include a first cover and a second cover. In this case, the discharge space 55 may be formed in the first cover, and the processing unit for the reaction (e.g., a gas supply unit) may be formed in the second cover (see...). Figure 4 ).

[0047] The partition 100 is a cavity that houses the reactor R, and may also be referred to as a cavity. In embodiments, the reactor R, including the reaction space 51, is referred to as the inner cavity, and the entire structure of the substrate processing apparatus housing multiple reactors R may be referred to as the outer cavity. It should be noted that in this specification, the expression that the reactor is housed in the partition is a concept that includes any configuration in which the reactor is surrounded by the partition, the reactor is seated on a structure defined by the partition, or the reactor is supported by the partition.

[0048] The support portion TLD can be configured to support at least a portion of the reactor R. For example, the reactor R may include a discharge unit configured to provide a discharge space 55 surrounding the reaction space 51, and the support portion TLD can be configured to support the discharge unit. The support portion TLD can be supported by the partition 100. As described above, the support portion TLD can act as a top cover, which is supported by the partition 100 to cover the outer cavity while supporting the reactor R.

[0049] The first discharge port 13 may be configured to communicate with the discharge space 55. In an embodiment, the first discharge port 13 may be configured to communicate with a first portion of the discharge space 55 formed around the reaction space 51. The first discharge port 13 may connect one end of the first discharge channel 15 to the discharge space 55. In an alternative embodiment, gas in the discharge space 55 may be discharged downward through the first discharge port 13 into the first discharge channel 15. This downward discharge may be achieved through a channel structure within the first discharge port 13. For example, a portion of the channel structure of the first discharge port 13 may communicate laterally with the discharge space 55, and another portion of the channel structure of the first discharge port 13 may communicate downward with the first discharge channel 15.

[0050] The second discharge port 14 can be configured to communicate with the discharge space 55. In an embodiment, the second discharge port 14 can be configured to communicate with a second portion of the discharge space 55 formed around the reaction space 51. The second discharge port 14 can connect one end of the second discharge path 16 to the discharge space 55. In an alternative embodiment, gas in the discharge space 55 can be discharged downward through the second discharge port 14 into the second discharge channel 16. This downward discharge can be achieved through a channel structure within the second discharge port 14. For example, a portion of the channel structure of the second discharge port 14 can communicate laterally with the discharge space 55, and another portion of the channel structure of the second discharge port 14 can communicate downward with the second discharge path 16.

[0051] In an alternative embodiment, the first exhaust port 13 and the second exhaust port 14 may be arranged symmetrically. For example, the first exhaust port 13 and the second exhaust port 14 may be arranged at a 180-degree interval, facing opposite directions to each other. In another embodiment, in addition to the first exhaust port 13 and the second exhaust port 14, additional exhaust ports may be provided, and they may be arranged at the same angular interval.

[0052] In a substrate processing apparatus with such a discharge structure, the gas flow and discharge flow in the reactor can be uniformly controlled by providing multiple discharge ports around the reaction space 51. In an alternative embodiment, the discharge ports can be arranged asymmetrically for a more efficient and uniform discharge flow in the reactor. The optimal arrangement of the discharge ports can be determined empirically or through simulation evaluation.

[0053] The first discharge channel 15 can connect the first discharge port 13 and the conveying channel 18. One end of the first discharge channel 15 can be connected to the first discharge port 13 and the other end of the first discharge channel 15 can be connected to the first conveying channel 18. Therefore, a portion of the gas in the reaction space 51 can be discharged by flowing to the conveying channel 18 via the first discharge port 13, the first discharge channel 15 and the junction 17.

[0054] In some embodiments, the first discharge channel 15 may extend to surround a portion of the discharge space 55. Because the first discharge port 13 has a channel structure for downward discharge, the first discharge channel 15 may be located below the discharge space 55 of the reactor R. For example, the first discharge channel 15 may extend below the discharge space 55 along the edge of the support portion TLD. The distance from the center of symmetry of the discharge space 55 surrounding the reaction space 51 to the first discharge channel 15 may be greater than the distance from the center of symmetry of the discharge space 55 to the edge of the discharge space 55. Accordingly, a first discharge channel 15 may be formed surrounding a portion of the discharge space 55.

[0055] The first discharge passage 15 may extend through a first portion of the support portion TLD. Because the gas flowing through the first discharge passage 15 is delivered from the first discharge port 13 to the support portion TLD, a first seal may be disposed between the first discharge port 13 and the support portion TLD to prevent such gas leakage. The first seal may be disposed in a recess provided in the first discharge port 13 and / or the support portion TLD.

[0056] In an alternative embodiment, the first channel cover may be disposed between the first discharge port 13 and the support portion TLD. Although the first channel cover and the support portion TLD are... Figure 1 The configuration is shown as a whole, but the first channel cover can be implemented in a separate configuration from the supporting TLD (see [reference]). Figure 12 The first cover 130). In this case, the first discharge channel 15 can extend between the first channel cover and the support portion TLD. That is, the first channel cover can extend in the extending direction of the first discharge channel 15.

[0057] By implementing the first channel cover and the support portion TLD in a separate configuration, the first discharge channel 15 can be easily maintained. For example, the first channel cover, implemented in a configuration separate from the support portion TLD, can be secured to the support portion TLD by separate coupling members, and by removing the coupling members, the first channel cover can be separated, thus exposing the first discharge channel 15. In other embodiments, to prevent gas leakage, a second seal can be arranged between the first discharge port 13 and the first channel cover.

[0058] The second discharge channel 16 can connect the second discharge port 14 and the conveying channel 18. One end of the second discharge channel 16 can be connected to the second discharge port 14, and the other end of the second discharge channel 16 can be connected to the conveying channel 18. Therefore, another portion of the gas in the reaction space 51 can be discharged by flowing to the conveying channel 18 via the second discharge port 14, the second discharge channel 16, and the junction 17. The second discharge channel 16 can extend through a second portion of the support portion TLD (i.e., the second portion is different from the first portion of the support portion TLD).

[0059] In some embodiments, the second discharge channel 16 may extend to surround a portion of the discharge space 55. Because the second discharge port 14 has a channel structure for downward discharge, the second discharge channel 16 may be located below the discharge space 55 of the reactor R. For example, the second discharge channel 16 may extend below the discharge space 55 along the edge of the support portion TLD. The distance from the center of symmetry of the discharge space 55 surrounding the reaction space 51 to the second discharge channel 16 may be greater than the distance from the center of the discharge space 55 to the edge of the discharge space 55. Accordingly, a second discharge channel 16 may be formed surrounding a portion of the discharge space 55.

[0060] At connection point 17, the first discharge channel 15 and the second discharge channel 16 can be connected to each other. That is, gas in the first discharge channel 15 and gas in the second discharge channel 16 can be discharged through connection point 17. Connection point 17 can be implemented within the support portion TLD. For example, connection point 17 can be arranged at a corner of the support portion TLD. More specifically, the first discharge channel 15 can extend along a first surface of the support portion TLD, the second discharge channel 16 can extend along a second surface of the support portion TLD, and connection point 17 can be at the corner where the first and second surfaces intersect.

[0061] Connection point 17 can be connected to conveying channel 18, and thus the gas in the first discharge channel 15 and the gas in the second discharge channel 16 can be conveyed to the discharge pump EP through connection point 17 and conveying channel 18. In an alternative embodiment, the aforementioned discharge can be downward, and downward discharge can be achieved through a channel structure within at least a portion of the components supporting the reactor R (e.g., support portion TLD and / or partition 100). For example, to achieve the channel structure, the first discharge channel 15 and the second discharge channel 16 can extend through at least a portion of the support portion TLD supporting the reactor R.

[0062] The channel structure around junction 17 can be T-shaped or T-shaped. A first part of the channel structure around junction 17 can communicate with the first discharge channel 15 in a first lateral direction, a second part of the channel structure around junction 17 can communicate with the second discharge channel 16 in a second lateral direction, and a third part of the channel structure around junction 17 can communicate with the conveying channel 18 in a downward direction.

[0063] In some embodiments, the cross-sectional area of ​​the conveying channel 18 may be larger than the cross-sectional area of ​​the first discharge channel 15. For example, the cross-sectional area of ​​the conveying channel 18 may be twice the cross-sectional area of ​​the first discharge channel 15, and the cross-sectional area of ​​the conveying channel 18 may be twice the cross-sectional area of ​​the second discharge channel 16. Therefore, gas moving through the first discharge channel 15 and the second discharge channel 16 can be conveyed to the conveying channel 18 without flow interference, flow bottlenecks, or changes in flow rate. In some embodiments, the cross-sections of both the first discharge channel 15 and the conveying channel 18 may be circular, in which case the diameter of the first discharge channel 15 may be half the diameter of the conveying channel 18.

[0064] As described above, the first discharge channel 15, the second discharge channel 16, and their junction 17 can be arranged to be inserted into the support portion TLD. Such an arrangement of the first discharge channel 15, the second discharge channel 16, and the junction 17 has the following technical advantages: the discharge structure can be simplified in a multi-reactor structure in which the substrate processing of multiple reactors is carried out simultaneously.

[0065] A transport channel 18 may be provided in the separator 100. The transport channel 18 may be located below the support portion TLD. In some embodiments, the transport channel 18 may be formed to extend along a portion of the separator 100 (e.g., the inside of a sidewall). In an embodiment, the substrate processing apparatus includes a first surface and a second surface adjacent to the first surface, and the transport channel 18 may extend along the edge between the first surface and the second surface. In an additional embodiment, the transport channel 18 may be formed to extend along the inside of the lower wall of the separator 100.

[0066] In an alternative embodiment, a second channel cover may be disposed between the support portion TLD and the separator 100. Although the second channel cover and the separator 100 are... Figure 1 The diagram shows the overall configuration, but the second channel cover can be implemented separately from the separator 100.

[0067] Although the conveyor channel 18 is in Figure 1 The conveying channel 18 extends vertically within the partition 100, but in some embodiments, it may extend horizontally along the surface of the partition 100. In this case, the conveying channel 18 will be arranged between the second channel cover and the partition 100 (see [link to documentation]). Figure 12 (Second cover 140 in the middle). In addition, the second channel cover can extend in the extension direction (i.e., the horizontal extension direction) of the conveying channel 18.

[0068] Figure 2 This is a view of a substrate processing apparatus according to another embodiment of the present invention. Figure 3This is a plan view of the substrate processing apparatus. The substrate processing apparatus according to these embodiments may be a modification of the substrate processing apparatus according to the above embodiments. Hereinafter, the embodiments will not be described again.

[0069] The substrate processing apparatus can be a multi-reactor apparatus comprising multiple reactors. That is, a first reactor R1, a second reactor R2, a third reactor R3, and a fourth reactor R4 can be included in one substrate processing apparatus, allowing multiple substrates to be processed simultaneously. Although Figure 2 and Figure 3 Four reactors are shown, but this disclosure is not limited thereto, and the substrate processing apparatus may include multiple reactors (i.e., two or more reactors).

[0070] refer to Figure 2 and Figure 3 The substrate processing apparatus may include a first reactor R1, a first discharge port 13, a second discharge port 14, a first discharge channel 15, a second discharge channel 16, and a first conveying channel 18. These components have been referenced. Figure 1 A detailed description is provided, and therefore will not be repeated herein. Furthermore, the substrate processing apparatus may also include a second reactor R2, a third discharge port 23, a fourth discharge port (not shown), a third discharge channel 25, a fourth discharge channel 26, and a second conveying channel 28. The substrate processing apparatus may also include the structure of the corresponding discharge ports and discharge channels, as well as ports associated with the third reactor R3 and the fourth reactor R4.

[0071] The third emission port 23 can be configured to communicate with the emission space 55'. In an embodiment, the third emission port 23 can be configured to communicate with a third portion of the emission space 55' formed around the reaction space 51'. The third emission port 23 can connect one end of the third emission path 25 to the emission space 55'. In an alternative embodiment, the gas in the emission space 55' can be discharged downward through the third emission port 23 into the third emission channel 25. This downward discharge can be achieved through a channel structure within the third emission port 23. For example, a portion of the channel structure of the third emission port 23 can communicate laterally with the emission space 55', and another portion of the channel structure of the third emission port 23 can communicate downward with the third emission channel 25.

[0072] A fourth discharge port (not shown) may be configured to communicate with the discharge space 55' in a different direction than the third discharge port 23. In an embodiment, the fourth discharge port may be configured to communicate with a fourth portion of the discharge space 55' formed around the reaction space 51'. The fourth discharge port may connect one end of the fourth discharge channel 26 to the discharge space 55'. In an alternative embodiment, gas in the discharge space 55' may be discharged downward through the fourth discharge channel 26 via the fourth discharge port. This downward discharge may be achieved through a channel structure within the fourth discharge port. For example, a portion of the channel structure of the fourth discharge port may communicate laterally with the discharge space 55', and another portion of the channel structure of the fourth discharge port may communicate downward with the fourth discharge channel 26.

[0073] In an alternative embodiment, the third exhaust port 23 and the fourth exhaust port (not shown) may be arranged symmetrically. For example, the third exhaust port 23 and the fourth exhaust port may be arranged to face opposite directions at a 180-degree interval. In another embodiment, additional exhaust ports may be provided in addition to the third exhaust port 23 and the fourth exhaust port, and these exhaust ports may be arranged at the same angular interval. In yet another embodiment, the third exhaust port 23 and the fourth exhaust port may be arranged asymmetrically and have different angular intervals.

[0074] The third discharge channel 25 can be connected to the third discharge port 23 and the second delivery channel 28. One end of the third discharge channel 25 can be connected to the third discharge port 23, and the other end of the third discharge channel 25 can be connected to the second delivery channel 28. Therefore, a portion of the gas in the reaction space 51' can be discharged by flowing through the third discharge port 23, the third discharge channel 25, and the second junction 27 to the second delivery channel 28. The third discharge channel 25 can extend through a third portion of the support portion TLD.

[0075] In some embodiments, a third discharge channel 25 may extend to surround a portion of the discharge space 55'. Because the third discharge port 23 has a channel structure for downward discharge, the third discharge channel 25 may be located below the discharge space 55' of the reactor R. For example, the third discharge channel 25 may extend below the discharge space 55' along the edge of the support portion TLD. The distance from the center of symmetry of the discharge space 55' surrounding the reaction space 51' to the third discharge channel 25 may be greater than the distance from the center of symmetry of the discharge space 55' to the edge of the discharge space 55'. Accordingly, a third discharge channel 25 may be formed surrounding a portion of the discharge space 55'.

[0076] The fourth discharge channel 26 can connect to the fourth discharge port (not shown) and the second delivery channel 28. One end of the fourth discharge channel 26 can be connected to the fourth discharge port, and the other end of the fourth discharge channel 26 can be connected to the second delivery channel 28. Therefore, another portion of the gas in the reaction space 51' can be discharged by flowing through the fourth discharge port, the fourth discharge channel 26, and the second junction 27 to the second delivery channel 28. The fourth discharge channel 26 can extend through a fourth portion of the support portion TLD (i.e., the fourth portion is different from the third portion of the support portion TLD).

[0077] In some embodiments, the fourth discharge channel 26 may extend to surround a portion of the discharge space 55'. Because the fourth discharge port has a channel structure for downward discharge, the fourth discharge channel 26 may be located below the discharge space 55' of the reactor R. For example, the fourth discharge channel 26 may extend below the discharge space 55' along the edge of the support portion TLD. The distance from the center of symmetry of the discharge space 55' surrounding the reaction space 51' to the fourth discharge channel 26 may be greater than the distance from the center of symmetry of the discharge space 55' to the edge of the discharge space 55'. Accordingly, a fourth discharge channel 26 may be formed surrounding a portion of the discharge space 55'.

[0078] At the second junction 27, the third emission channel 25 and the fourth emission channel 26 can be connected to each other. That is, the gas in the third emission channel 25 and the gas in the fourth emission channel 26 can be emitted through the second junction 27. The second junction 27 can be implemented within the support portion TLD. For example, the second junction 27 can be arranged at the second corner of the support portion TLD. More specifically, the third emission channel 25 can extend along the third surface of the support portion TLD, the fourth emission channel 26 can extend along the fourth surface of the support portion TLD, and the second junction 27 can be at the second corner where the third surface and the fourth surface intersect. Therefore, the first emission channel 15 and the second emission channel 16 can be joined at the first junction 17, which is the first corner of the support portion TLD, and the third emission channel 25 and the fourth emission channel 26 can be joined at the second junction 27, which is the second corner of the support portion TLD.

[0079] In an alternative embodiment, the first exhaust passage 15 and the fourth exhaust passage 26 may extend parallel to each other. In other alternative embodiments, the second exhaust passage 16 and the third exhaust passage 25 may extend on the same line.

[0080] The second connection point 27 can be connected to the second delivery channel 28, and thus the gas in the third discharge channel 25 and the gas in the fourth discharge channel 26 can be delivered to the discharge pump EP through the second connection point 27 and the second delivery channel 28.

[0081] The channel structure around the second junction point 27 can be T-shaped or T-shaped. The first part of the channel structure around the second junction point 27 can communicate with the third discharge channel 25 in the first lateral direction, the second part of the channel structure around the second junction point 27 can communicate with the fourth discharge channel 26 in the second lateral direction, and the third part of the channel structure around the second junction point 27 can communicate with the second conveying channel 28 in the downward direction.

[0082] A second conveying channel 28 may be provided in the partition 100. The second conveying channel 28 may be located below the support portion TLD. In some embodiments, the second conveying channel 28 may be formed to extend along a portion of the partition 100 (e.g., the inside of a sidewall).

[0083] The substrate processing apparatus can be a multi-substrate processing apparatus, which implements gas supply and exhaust structures to process multiple substrates simultaneously. For example, the multi-substrate processing apparatus can be a horizontal batch processing apparatus capable of processing multiple substrates simultaneously. That is, multiple substrates arranged in the lateral direction can be processed simultaneously. In this case, the first reactor R1 and the second reactor R2 can act as cavities to process multiple substrates simultaneously.

[0084] The substrate processing apparatus may further include a first transport channel 18 and a second transport channel 28. The first transport channel 18 connects a first junction 17 to a connection port CP to transport gas from the first junction 17 to the connection port CP. The second transport channel 28 connects a second junction 27 to the connection port CP to transport gas from the second junction 27 to the connection port CP. The connection port CP can be connected to an exhaust pump EP via an external channel EC, and the gas can be exhausted to the outside by the exhaust pump EP. In an alternative embodiment, the connection port CP may be arranged inside or outside the separator 100. In another alternative embodiment, the external channel EC may be arranged to be inserted into the separator 100.

[0085] In an alternative embodiment, the connection ports CP and CP' can be arranged symmetrically with respect to the substrate processing apparatus. For example, as... Figure 2 and Figure 3 As shown, the first connection port CP connected to the first transport channel 18 and the second transport channel 28, and the second connection port CP' connected to the third transport channel and the fourth transport channel can be arranged symmetrically about the central part of the substrate processing apparatus.

[0086] In some embodiments, the external channels EC and EC' can be arranged symmetrically with respect to the substrate processing apparatus. For example, as Figure 2 and Figure 3As shown, the first external channel EC and the second external channel EC', respectively connected to the first connection port CP and the second connection port CP', can be arranged symmetrically about the central portion of the substrate processing apparatus. Furthermore, in an alternative embodiment, the discharge pump EP can be located at the central portion of the substrate processing apparatus.

[0087] In another embodiment, the external channel EC and the discharge pump EP can be arranged asymmetrically with respect to the substrate processing apparatus. For example, as Figures 7 to 9 As shown, a first external channel EC connected to the first connection port CP can extend below the separator 100 toward the first corner C1 of the outer cavity. Furthermore, a second external channel EC' connected to the second connection port CP' can extend below the separator 100 toward the second corner C2 of the outer cavity. A discharge pump EP can be disposed on one surface of the substrate processing apparatus, for example, corresponding to the center between the first corner C1 and the second corner C2. The first external channel EC can extend from a portion extending to the first corner C1 to the discharge pump EP. Additionally, the second external channel EC' can extend from a portion extending to the second corner C2 to the discharge pump EP.

[0088] In another alternative embodiment, the first transport channel 18 and the second transport channel 28 may be arranged to be inserted into the partition 100 of the outer cavity. For example, the first transport channel 18 may be formed in the partition 100 of the outer cavity, and the first connection point 17 may be connected to a portion disposed in the partition 100. Figure 7 The first conveying channel 18 is located at the first corner C1. Similarly, the second conveying channel 28 can be formed in the partition 100 of the outer cavity, and the second connection point 27 can be connected to the (…) arranged in the partition 100. Figure 7 The second conveying channel 28 is located at the second corner C2. The first conveying channel 18 and the second conveying channel 28 can be connected to the connection port CP.

[0089] Figures 4 to 6 yes Figure 2 and Figure 3 A cross-sectional view of the substrate processing apparatus. Figure 4 It is along the substrate processing device Figure 3 A cross-sectional view taken from line IV-IV'. Figure 5 It is along the substrate processing device Figure 3 The cross-sectional view taken by line V-V', and Figure 6 It is along the substrate processing device Figure 3 The cross-sectional view taken from line VI-VI'.

[0090] refer to Figures 4 to 6 The reactor of the substrate processing apparatus may include a substrate support unit 150, a first cover 110, and a second cover 120.

[0091] The first cover 110 is located on the substrate support unit 150 and covers the upper part of the reaction space 51, and may include a processing unit. The processing unit may be fastened (e.g., fixed) to the first cover 110 and may employ components that perform appropriate functions depending on the function of the reactor. For example, when the reactor is performing a deposition function, the processing unit of the first cover 110 may include a reactant supply (e.g., a nozzle assembly). In another embodiment, when the reactor is performing a polishing function, the processing unit of the first cover 110 may include a polishing pad.

[0092] The second cover 120 may be located between the first cover 110 and the separator 100. The second cover 120 may provide space for accommodating a processing unit connected to the first cover 110. Optionally, the second cover 120 may provide a portion of the space for the object to be processed. For example, when the separator 100 is performing a deposition function, a reaction space 51 for deposition may be formed inside the sidewall of the second cover 120, and a discharge space 55 may be formed inside the second cover 120.

[0093] The support portion TLD can contact the second cover 120 to support the first cover 110 and the second cover 120. The support portion TLD can be supported by the separator 100. The support portion TLD can be disposed between the separator 100 and the cover (especially the second cover 120). A gap E can be formed between the second cover 120 and the flow control ring FCR. The gap E can act as a channel between the first reaction space 51 and the first discharge space 55. Therefore, the first reaction space 51 and the first discharge space 55 can communicate with each other through the channel.

[0094] refer to Figure 4 A portion of the second cover 120 may communicate with the first discharge port 13. Therefore, a portion of the processing gas in the discharge space 55 can be discharged through the first discharge port 13. In an exemplary embodiment, the first discharge port 13 may have an L-shaped or L-shaped channel formed therein, allowing the gas in the discharge space 55 to flow laterally and be discharged downwards. Another portion of the second cover 120 may communicate with the second discharge port in a different direction than the first discharge port 13. Therefore, another portion of the processing gas in the discharge space 55 can be discharged through the second discharge port.

[0095] Gas discharged downward through the first discharge port 13 can be discharged in connection with the first discharge passage 15. As described above, the first discharge passage 15 can extend to surround at least a portion of the first discharge space 55. The first discharge passage 15 can be connected to the first junction point 17. Similarly, gas discharged downward through the second discharge port can be discharged in connection with the second discharge passage. The second discharge passage can extend to surround another portion of the first discharge space 55, and the second discharge passage can be connected to the first junction point 17.

[0096] The first junction 17 may have a T-shaped or T-shaped (e.g., Y-shaped) channel formed therein. Therefore, gas from the first discharge channel 15 may be directed toward the first junction 17 in a first direction (e.g., a first lateral direction), and gas from the second discharge channel 16 may be directed toward the first junction 17 in a second direction (e.g., a second lateral direction). Additionally, gas introduced in the first and second directions may be discharged in a third direction (e.g., a downward direction).

[0097] In an alternative embodiment, a flow control ring (FCR) may be disposed between the support portion TLD and the substrate support unit 150. The flow control ring FCR is arranged on the support portion TLD and may be arranged to be slidable on the support portion TLD. The flow control ring FCR may be spaced apart from the substrate support unit 150 to form a gap G, and the pressure balance between the reaction space 51 and the inner space of the outer cavity can be controlled by adjusting the gap G.

[0098] Figures 7 to 9 This is a view of a substrate processing apparatus according to an embodiment of the present invention. More specifically, Figure 7 A portion of the substrate processing apparatus is shown, excluding the cover, discharge port, discharge path, and transport port (i.e., transport paths 18 and 28, connection port CP, external path EC connected to an external pump, etc.). Figure 8 It is observed from the first direction. Figure 7 The view, and Figure 9 It is observed from the second direction. Figure 7 The views are shown. The substrate processing apparatus according to these embodiments can be modifications of the substrate processing apparatus according to the above embodiments. Hereinafter, repeated descriptions of the embodiments will not be given again.

[0099] refer to Figures 7 to 9 Delivery paths 18 (18a and 18b) and 28 (28a and 28b) are formed in the partition 100. Delivery paths 18 and 28 are connected to an external path EC via a connection port CP, and the external path EC is connected to the main discharge path 211. Therefore, the gas in the reaction space is discharged to the discharge pump EP via the delivery ports (first connection point 17 and second connection point 27), delivery paths 18 and 28, external path EC, and main discharge path 211.

[0100] like Figure 8 As shown, two reactors R1a and R1b share internal transport paths 18 (18a and 18b) in a first direction, and the remaining two reactors share another internal transport path 28 (28a and 28b) in the opposite direction (not shown). The two internal transport paths 18 and 28 are connected to the external path 9 via corresponding connection ports CP. Figure 8 The diagram shows four reactors sharing an external path 9, a main discharge path 211, and a discharge pump EP. An isolation valve 210 can be added to the main discharge path 211. Therefore, the discharge pump EP can be protected from external atmospheres during maintenance cycles by the isolation valve 210. Additionally, a pressure control valve (e.g., a throttle valve) can be added to the main discharge path 211. The external path EC can be fixed to maintain tight contact with the lower surface of the partition 100 of the outer cavity without movement. In an alternative embodiment, the two internal delivery paths 18 and 28 can be connected to each other within the bottom wall of the partition 100 of the outer cavity and directly connected to the main discharge path 211, without an external path EC.

[0101] In substrate processing apparatuses employing lateral pumping, deviations in the exhaust flow typically occur due to the asymmetric exhaust characteristics of lateral pumping. More specifically, in each reactor, the flow of reactant gases is concentrated at exhaust ports located in the lateral portion. Due to this concentration of gas flow, the thin film deposited on the substrate near the exhaust port is thicker than that deposited in the opposite direction away from the exhaust port. Consequently, the profile of the film deposited on the substrate loses symmetry, and its compatibility with subsequent processes deteriorates.

[0102] Figures 10 to 13 These are illustrations of a substrate processing apparatus according to an embodiment of the present invention that solves the above-described problems. The substrate processing apparatus according to these embodiments may be modifications of the substrate processing apparatus according to the above-described embodiments. Hereinafter, repeated descriptions of the embodiments will not be given again.

[0103] Figure 10 An upper support portion 20 of a cavity 10 comprising multiple reactors is shown. A first reactor R1, a second reactor R2, a third reactor R3, and a fourth reactor R4 may be arranged at equal intervals on the support portion 20. Each reactor may include a gas supply section (not shown), a heating block (not shown) arranged opposite the gas supply section (the processing substrate sits on the heating block), and an exhaust conduit 30. In this configuration, the gas supply section, the heating block, and the exhaust conduit 30 may form a reaction space.

[0104] exist Figure 10 In this document, the gas supply section and heating block have been omitted for the purpose of understanding this disclosure. Figure 10 In each reactor, at least two discharge ports 40 and 40' are arranged on the side of the discharge pipe 30 and are arranged to face each other based on the center of symmetry of the discharge pipe 30, but are not limited thereto. A first connection point 50 is arranged on the support portion 20, formed within the support portion 20, and is arranged not to be directly connected to the discharge ports 40 and 40'.

[0105] Figure 11 yes Figure 10An internal perspective view of the supporting portion 20. (Reference) Figure 11 Within the support portion 20, a first discharge channel 70 and a second discharge channel 80 are formed around each reactor. The first discharge channel 70, the second discharge channel 80, and the discharge pipe 30 are connected to the reaction space via a first port path 60.

[0106] Figure 12 From Figure 11 A three-dimensional view of the lateral portion observed from direction A. Figure 12 It is the fourth reactor R4, but the same applies to the first through third reactors R1, R2 and R3.

[0107] Figure 12 A cavity discharge system including a support portion 20 and a cavity wall 160 is shown. (Example) Figure 11 and Figure 12 As shown, the discharge channel is formed in the support portion 20 and the cavity wall 160. More specifically, in Figure 12 In this structure, a second discharge channel 80 is formed on the support portion 20, and at the first connection point 50, the second discharge channel 80 is connected to the first discharge channel 70. The second discharge channel 80 communicates with the discharge space 350 of the discharge pipe 30 through the first port path 60 of the discharge port 40. A conveying channel 90 is formed within the cavity wall 160, and the conveying channel 90 communicates with the first discharge channel 70 and the second discharge channel 80 through the first connection point 50.

[0108] A second discharge channel 80 is formed on the upper surface of the support portion 20, and the upper surface is isolated from the outside by a first cover 130. The first cover 130 can be coupled to the support portion 20 by welding or other means, or it can be integrally formed with the top cover. A sealing unit such as an O-ring can be inserted between the first cover 130 and the first port path 60 to prevent external gas from entering or gas from flowing out of the discharge path.

[0109] A delivery channel 90 is formed on the upper surface of the cavity wall 160, and the upper surface is isolated from the outside by a second cover 140. The second cover 140 can be coupled to the cavity wall 160 by welding or other means, or it can be integrally formed with the cavity wall 160. Alternatively, a sealing unit such as an O-ring can be inserted between the support portion 20 and the cavity wall 160 without the second cover 140. The sealing unit such as the O-ring is inserted into portion B' between the second cover 140 and the first engagement point 50 to prevent external gas from entering or gas from flowing out of the exhaust path. Accordingly, the exhaust gas in the reaction space is discharged to the main exhaust channel (not shown) and the exhaust pump (not shown) through the exhaust space 350, the first port paths 60 and 60', the first exhaust channel 70 and the second exhaust channel 80, the first engagement point 50, the delivery channel 90, the first exhaust path 310, and the second exhaust path 320.

[0110] Figure 12 The fourth reactor R4 is illustrated, but the third reactor R3 (not shown) adjacent to it on the same side can also discharge via the same process. Connecting channel 300 and the first discharge path 310 are located at... Figure 12 The connection point C is connected, and discharge is achieved through the second discharge path 320, the main discharge channel, and the discharge pump. That is, the third reactor R3 and the fourth reactor R4 have a structure in which the first discharge path 310 and the second discharge path 320 are shared in the cavity wall 160.

[0111] Although Figure 12 Third reactor R3 and fourth reactor R4 are shown, but the same applies to first reactor R1 and second reactor R2. The emission paths (e.g., second emission path 320) for gases emitted from third reactor R3 and fourth reactor R4 and the emission paths (not shown) for gases emitted from first reactor R1 and second reactor R2 are interconnected and connected to a main emission channel (not shown) and an emission pump (not shown). For example, as... Figure 13 As shown, the first reactor R1 and the second reactor R2 can be discharged to the main discharge channel 170 and the discharge pump through the third discharge path 310' and the fourth discharge path 320'.

[0112] Figure 13 The discharge structure of the chambers, including the first reactor R1, the second reactor R2, the third reactor R3, and the fourth reactor R4, is schematically shown.

[0113] exist Figure 13 In this configuration, the second emission path 320 and the fourth emission path 320' share the main emission channel 170 and the emission pump. The second emission path 320, the fourth emission path 320', and the main emission channel 170 can be formed inside or outside the cavity wall. For example, an external emission pipe can be arranged below the cavity wall. Furthermore, the diameters or dimensions of the emission channels can differ to maintain a constant emission efficiency (emission conduction). That is, the diameters of the first emission channel 70 and the second emission channel 80 can be half the diameter of the conveying channel 90, and the diameter of the conveying channel 90 can be half the diameter of the first emission path 310. Additionally, the diameters of the first emission path 310 and the second emission path 320 can be half the diameter of the main emission channel 170.

[0114] As above Figures 10 to 13As described herein, the cavity system according to this disclosure has a simpler external structure, making it easier to install cavity additives, such as plasma generators or matchers. Furthermore, because no additional components (such as multiple external exhaust lines in the exhaust duct) are required, for example to improve exhaust uniformity, a reduction in device weight can be achieved. Due to the simplification of the device and the reduction in weight, maintenance becomes easier, and operator safety can be further improved.

[0115] It should be understood that the embodiments disclosed herein should be understood in a descriptive sense only and are not intended to be limiting. The description of features or aspects within each embodiment should be typically considered as other similar features or aspects that may be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope of this disclosure as defined by the appended claims.

Claims

1. A substrate processing apparatus, comprising: Reactor; A support portion configured to support at least a portion of the reactor; The first and second discharge channels are connected to the reaction space of the reactor. The emission space surrounds the reaction space; and A first emission port is located between the emission space and the first emission channel. Each of the first and second emission channels extends to surround a portion of the reaction space. The first discharge channel extends through a first portion of the support portion.

2. The substrate processing apparatus according to claim 1, further comprising a first seal between the first discharge port and the support portion.

3. The substrate processing apparatus of claim 1, further comprising a first channel cover disposed between the first discharge port and the support portion, and The first discharge channel extends between the first channel cover and the support portion.

4. The substrate processing apparatus of claim 3, further comprising a second seal between the first discharge port and the first channel cover.

5. The substrate processing apparatus according to claim 1, wherein, The second discharge channel extends through a second portion of the support portion that is different from the first portion.

6. The substrate processing apparatus according to claim 5, wherein, The support portion also includes the junction of the first emission channel and the second emission channel.

7. The substrate processing apparatus according to claim 6, wherein, The connection point is located at the corner of the support portion.

8. The substrate processing apparatus according to claim 6, wherein, The connection point includes a T-shaped or T-shaped channel structure.

9. The substrate processing apparatus according to claim 5, further comprising: A separator, located below the support portion; as well as A conveying channel, which is connected to the first discharge channel and the second discharge channel. The conveying channel extends through a portion of the separator.

10. The substrate processing apparatus of claim 9, further comprising a second channel cover disposed between the support portion and the separator.

11. The substrate processing apparatus according to claim 10, wherein, The conveying channel extends between the second channel cover and the separator.

12. The substrate processing apparatus according to claim 9, wherein, The diameter of the first discharge channel is half the diameter of the conveying channel.

13. A substrate processing apparatus, comprising: First reactor; Second reactor; A support portion configured to support at least a portion of the first reactor and at least a portion of the second reactor; The first discharge channel is connected to the first reaction space of the first reactor; The second discharge channel is connected to the first reaction space of the first reactor; The third discharge channel is connected to the second reaction space of the second reactor; The fourth discharge channel is connected to the second reaction space of the second reactor. A first emission space, which surrounds the first reaction space; and The first emission port is located between the first emission space and the first emission channel; Each of the first and second emission channels extends to surround at least a portion of the first reaction space, and Each of the third and fourth emission channels extends to surround at least a portion of the second reaction space. The first discharge channel extends through a first portion of the support portion. The second discharge channel extends through the second portion of the support section. The third discharge channel extends through the third portion of the support portion, and The fourth discharge channel extends through the fourth section of the support portion.

14. The substrate processing apparatus according to claim 13, wherein, The first emission channel and the fourth emission channel extend parallel to each other.

15. The substrate processing apparatus according to claim 13, wherein, The second and third emission channels extend along the same line.

16. The substrate processing apparatus according to claim 13, wherein, The first discharge channel and the second discharge channel are joined at the first corner of the support portion, and The third and fourth emission channels are joined at the second corner of the support portion.

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