Dielectric materials and multilayer ceramic electronic components using the dielectric materials

Abstract

This disclosure provides a dielectric material and a multilayer ceramic electronic component using the dielectric material, the dielectric material comprising: a main component, composed of (Ba... 1‑x Ca x (Ti) 1‑y Zr y O3、(Ba 1‑x Ca x (Ti) 1‑ y Sn y )O3 or (Ba 1‑x Ca x (Ti) 1‑y Hf y O3 (0≤x≤1 and 0≤y≤0.05) is represented; and secondary components. When using Cu Kα1 radiation (wavelength) X-ray diffraction (XRD) patterns, the angle corresponding to the maximum peak in the (002) and (200) planes is called θ0 and the angles corresponding to the full width at half maximum (FWHM) are called θ1 and θ2, respectively.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2020-0068305, filed on June 5, 2020, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference for all purposes. Technical Field

[0002] This disclosure relates to a dielectric material and a multilayer ceramic electronic component using the dielectric material. Background Technology

[0003] Typically, electronic components using ceramic materials, such as capacitors, inductors, piezoelectric elements, rheostats, and thermistors, include a ceramic body formed from ceramic materials, an internal electrode formed in the ceramic body, and an external electrode mounted on the surface of the ceramic body to connect to the internal electrode.

[0004] With the recent trend towards smaller and more multifunctional electronic components, chip components are trending towards smaller sizes and higher performance. Therefore, there is a demand for multilayer ceramic capacitors to have high capacitance while maintaining a small size.

[0005] For example, stacking a greater number of thinner dielectric and electrode layers in a multilayer ceramic capacitor is a method to achieve smaller size and higher capacitance in multilayer ceramic capacitors. Current dielectric layers are approximately 0.7 μm thick, and thinner dielectric layers are being developed.

[0006] The miniaturization of multilayer ceramic capacitors leads to a deterioration in product reliability, high-temperature withstand voltage characteristics, and DC bias characteristics. The term "DC bias characteristics" refers to the phenomenon that the capacitance or dielectric constant decreases as the size of the DC bias field applied to the product increases.

[0007] For example, as in applicable examples such as power management integrated circuits, products are typically used with a DC bias applied. Furthermore, under conditions of high DC bias, there is an increasing need to achieve high dielectric constants or capacitances. Summary of the Invention

[0008] One aspect of this disclosure is to provide a dielectric material with an improved DC bias field dielectric constant and a multilayer ceramic electronic component.

[0009] One aspect of this disclosure is to provide a dielectric material and a multilayer ceramic electronic component with improved high-temperature and high-voltage resistance properties.

[0010] One aspect of this disclosure is to provide a dielectric material and a multilayer ceramic electronic component that can meet X5R requirements.

[0011] According to one aspect of this disclosure, a dielectric material includes: a main component, composed of (Ba...1-x Ca x (Ti) 1-y Zr y O3、(Ba 1-x Ca x (Ti) 1-y Sn y )O3 or (Ba 1-x Ca x (Ti) 1-y Hf y O3 (0≤x≤1 and 0≤y≤0.05) is represented; and secondary components. When using Cu Kα1 radiation (wavelength... In the X-ray diffraction (XRD) pattern of the (002) and (200) planes, the angle corresponding to the maximum peak is called θ0 and the angles corresponding to the full width at half maximum (FWHM) are called θ1 and θ2 respectively (θ1<θ2), when (θ2-θ0) / (θ0-θ1) is greater than 0.54 and less than or equal to 1.0.

[0012] According to one aspect of this disclosure, a multilayer ceramic electronic component includes: a ceramic body including a dielectric layer, a first inner electrode, and a second inner electrode; and a first outer electrode and a second outer electrode, respectively disposed on the outer surface of the ceramic body and respectively connected to the first inner electrode and the second inner electrode. The dielectric layer comprises materials composed of (Ba...) 1-x Ca x (Ti) 1- y Zr y O3、(Ba 1-x Ca x (Ti) 1-y Sn y )O3 or (Ba 1-x Ca x (Ti) 1-y Hf y The principal and secondary components are represented by O3 (0≤x≤1 and 0≤y≤0.05). When using Cu Kα1 radiation (wavelength... In the XRD pattern of the (002) and (200) planes, the angle corresponding to the maximum peak is called θ0 and the angles corresponding to the full width at half maximum (FWHM) are called θ1 and θ2 respectively (θ1<θ2). When (θ2-θ0) / (θ0-θ1) is greater than 0.54 and less than or equal to 1.0.

[0013] According to one aspect of this disclosure, a dielectric material comprises: a dielectric material composed of (Ba 1-x Ca x (Ti) 1-y Zr y O3、(Ba 1-x Cax (Ti) 1-y Sn y )O3 or (Ba 1-x Ca x (Ti) 1-y Hf y The primary component is represented by O3, where 0 ≤ x ≤ 1 and 0 ≤ y ≤ 0.05; and the secondary components include a third, a fourth, and a fifth secondary component. The third secondary component comprises a compound of at least one element selected from elements containing Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb. The fourth secondary component comprises a compound of at least one element selected from elements containing Ba and Ca. The fifth secondary component comprises at least one compound selected from the group consisting of oxides of Si, carbonates of Si, and glasses containing Si. Based on 100 moles of the principal component, when the X-axis represents the mole of the fifth sub-component and the Y-axis represents the sum of the moles of the third and fourth sub-components, the relationship between the moles of the third, fourth, and fifth sub-components belongs to the boundary or interior of the quadrilateral connecting points A (0.500, 1.900), B (0.500, 3.10), C (5.000, 5.400), and D (5.000, 3.900). Attached Figure Description

[0014] The above and other aspects, features and advantages of this disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.

[0015] Figure 1 This is a schematic diagram of the microstructure after sintering according to an embodiment of the present disclosure.

[0016] Figure 2 It is along Figure 1 The cross-sectional view taken from line I-I' in the diagram.

[0017] Figure 3 yes Figure 2 An enlarged view of area "A" in the image.

[0018] Figures 4 to 6 This is a scanning electron microscope (SEM) analysis image of a prototype sample of the invention disclosed herein.

[0019] Figure 7 The XRD analysis results of a prototype sample of the invention disclosed herein are shown.

[0020] Figure 8 This is a graph showing the dielectric constant of a prototype sample of the invention disclosed herein under a DC bias field.

[0021] Figure 9 This is a graph showing the dielectric constant of a prototype sample of the invention disclosed herein under a DC bias field at various temperatures.

[0022] Figure 10 This is a diagram showing the content of the third, fourth, and fifth sub-components in a test example of the invention disclosed herein. Detailed Implementation

[0023] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, the present disclosure may be exemplified in many different forms and should not be construed as limited to the specific embodiments set forth herein, but should be understood to include various modifications, equivalents, and / or alternatives to the embodiments of the present disclosure. Similar reference numerals may be used for similar components in relation to the description of the drawings.

[0024] In this description, irrelevant details will be omitted to clearly depict this disclosure. In the accompanying drawings, thickness may be enlarged to clearly represent multiple layers and regions. Identical elements having the same function within the scope of the same concept will be described using the same reference numerals. Throughout this specification, unless otherwise specifically stated, when an component is referred to as "comprising" or "including" one or more other components, it means that it may also include, but does not exclude, additional components.

[0025] In this specification, expressions such as “having,” “may have,” “including,” or “may contain” may include the presence of corresponding features (e.g., elements such as numbers, functions, operations, components, etc.) but do not exclude the presence of additional features.

[0026] In this specification, expressions such as “A or B”, “at least one of A and / or B”, “one or more of A and / or B”, etc., may include all possible combinations listed together. For example, “A or B”, “at least one of A and B” or “at least one of A or B” may refer to the following: (1) at least one A, (2) at least one B or (3) both at least one A and at least one B.

[0027] In the accompanying drawings, the X direction can be defined as a first direction, the L direction, or the length direction; the Y direction can be defined as a second direction, the W direction, or the width direction; and the Z direction can be defined as a third direction, the T direction, or the thickness direction.

[0028] This disclosure relates to a dielectric material, and the dielectric material according to this disclosure is used in electronic components. Electronic components incorporating the dielectric material of this disclosure may include, for example, capacitors, inductors, piezoelectric elements, rheostats, or thermistors, but this disclosure is not limited thereto.

[0029] According to embodiments, the dielectric material may include materials composed of (Ba1-x Ca x (Ti) 1-y Zr y O3、(Ba 1-x Ca x (Ti) 1-y Sn y )O3 or (Ba 1-x Ca x (Ti) 1-y Hf y Principal and secondary components are represented by O3 (0≤x≤1 and 0≤y≤0.05). Using Cu Kα1 radiation (wavelength...) In the peaks of the (002) and (200) planes of the X-ray diffraction (XRD) pattern of the 002, when the angle corresponding to the maximum peak is called θ0 and the angles corresponding to the full width at half maximum (FWHM) are called θ1 and θ2 (θ1<θ2), respectively, (θ2-θ0) / (θ0-θ1) can be greater than 0.54 and less than or equal to 1.0.

[0030] In the example, the dielectric material of this disclosure may comprise grains and grain boundaries. Figures 1 to 3 This is a schematic diagram illustrating the microstructure of a dielectric material according to an embodiment of the present disclosure. The dielectric material according to the present disclosure can be formed by sintering the main components and secondary components, which will be described later. Furthermore, the dielectric material formed by sintering the main components and secondary components may include grains 141 and grain boundaries 142.

[0031] Typically, dielectric materials require a high dielectric constant. Therefore, efforts have been made to improve the crystallinity of the dielectric composition constituting the dielectric material. On the other hand, the inventors have discovered that the dielectric constant of a high DC bias field varies depending on the tetragonality (c / a) of the grains formed after sintering.

[0032] Three types of prototype multilayer ceramic capacitor (MLCC) samples were prepared and tested to confirm the relationship between grain tetragonality (c / a) and dielectric constant in a high DC bias field. Figures 4 to 6 The microstructures of coarse-grained BaTiO3 (CG), fine-grained BaTiO3 (FG), and fine-grained Ba-doped BaTiO3 (FG-Ba) are shown respectively. "Ba-doped" refers to the case where the added Ba content is twice that of other samples. Figures 4 to 6 The confirmed average grain sizes are 1740 nm, 251 nm, and 259 nm, respectively. Therefore, Figure 4 (CG) and Figure 5 The comparison between (FG) reflects the differences based on grain size. Figure 5 (FG) and Figure 6The comparison between (FG-Ba) shows the results of the comparison when the composition changes under the same particle size conditions.

[0033] Figure 7 This illustrates the use of Cu Kα1 radiation (wavelength) XRD patterns of the (002) and (200) planes of BaTiO3, and the (002) and (200) planes of powdered samples prepared by crushing CG, FG, and FG-Ba, respectively. Figure 7 It can be seen that the tetrahedrality (c / a) is as follows: CG>FG>FG-Ba, and CG shows a clear peak separation between the (002) and (200) planes of BaTiO3, but the two peaks partially overlap each other in FG, and the two peaks completely overlap each other and have a basically cubic structure in FG-Ba.

[0034] Reference Figure 7 For CG, FG, and FG-Ba, using Cu Kα1 radiation (wavelength) In the XRD patterns of the (002) and (200) planes, when the angle corresponding to the maximum peak is called θ0 and the angles corresponding to the full width at half maximum (FWHM) are called θ1 and θ2 (θ1 < θ2), respectively, (θ0 - θ1) can refer to the difference "A" between the angle corresponding to the maximum peak and the smaller angle corresponding to FWHM, and (θ2 - θ0) can refer to the difference "B" between the angle corresponding to the larger angle of FWHM and the angle corresponding to the maximum peak. In this case, it is confirmed that the value of B / A decreases when the squareness (c / a) increases to 1.004 (FG-Ba), 1.007 (FG), and 1.009 (CG).

[0035] Figure 8 The dielectric constants of CG, FG, and FG-Ba at room temperature with a DC bias field are shown. Figure 8 It can be seen that as the grain size decreases from CG to FG, the dielectric constant in a high DC bias field greater than or equal to 8 V / μm increases. Furthermore, when comparing FG and FG-Ba under the same grain size conditions, it is confirmed that the dielectric constant in a high DC bias field greater than or equal to 8 V / μm increases depending on the composition of the dielectric material. These results indicate that the dielectric constant in a high DC bias field can be improved by changing the composition of the dielectric material.

[0036] Based on the above results, it can be confirmed that as the squareness of the dielectric material decreases, the B / A ratio (the ratio of the difference between the angle corresponding to the larger angle of the FWHM and the angle corresponding to the maximum peak to the difference between the angle corresponding to the maximum peak and the angle corresponding to the smaller angle of the FWHM) increases, and the dielectric constant is improved under high DC bias. Furthermore, it can be confirmed that when using Cu Kα1 radiation (wavelength...) In the XRD pattern of the material, the dielectric material has an improved high DC bias field dielectric constant when the angle corresponding to the maximum peak is called θ0 and the angles corresponding to the full width at half maximum (FWHM) are called θ1 and θ2 (θ1<θ2) respectively, and (θ2-θ0) / (θ0-θ1) (=B / A=the ratio of the difference between the angle corresponding to the larger angle of FWHM and the angle corresponding to the maximum peak to the difference between the angle corresponding to the maximum peak and the angle corresponding to the smaller angle of FWHM) is greater than 0.54.

[0037] The ratio of the angle differences (θ2-θ0) / (θ0-θ1) (=B / A) can be greater than 0.54, greater than or equal to 0.55, greater than or equal to 0.56, greater than or equal to 0.57, or greater than or equal to 0.58, and less than or equal to 1 or less than 1, but this disclosure is not limited thereto. When the ratio of the angle differences (θ2-θ0) / (θ0-θ1) (=B / A) satisfies the above range, the dielectric material has an improved high DC bias field dielectric constant.

[0038] The dielectric material according to the embodiments may comprise a main component and secondary components, and the secondary components may comprise at least one of a first secondary component to a sixth secondary component. In this specification, the term "main component" may refer to a component that constitutes a relatively high weight percentage compared to other components, and may refer to a component contained in an amount greater than or equal to 50 wt% based on the total weight of the composition or dielectric material layer. Conversely, the term "secondary component" may refer to a component that constitutes a relatively low weight percentage compared to the main component, and may refer to a component contained in an amount less than 50 wt% based on the total weight of the composition or dielectric material layer.

[0039] Each component of the dielectric material according to the embodiments will be described in more detail below.

[0040] principal component

[0041] According to an embodiment, the dielectric material may comprise (Ba) 1-x Ca x (Ti) 1-y Zr y O3、(Ba 1-x Ca x (Ti) 1-y Sn y)O3 or (Ba 1-x Ca x (Ti) 1-y Hf y The principal component is represented by BaTiO3 (0≤x≤1, 0≤y≤0.05). The principal component can be, for example, a chemical compound in which a portion of Ca, Zr, Sn, and / or Hf is dissolved in BaTiO3. In the compositional formula, x can be greater than or equal to 0 and less than or equal to 1, and y can be greater than or equal to 0 and less than or equal to 0.05, but this disclosure is not limited thereto. For example, in the compositional formula, when x is 0, y is 0, and z is 0, the principal component can be BaTiO3.

[0042] First component

[0043] According to embodiments, the dielectric material according to this disclosure may contain at least one variable-valence acceptor element as a first sub-component. In some embodiments, the dielectric material may contain at least one selected from the group consisting of Mn, V, Cr, Fe, Ni, Co, Cu, and Zn, their oxides, and their carbonates as a first sub-component. In some embodiments, the variable-valence acceptor element may include Mn, V, Cr, Fe, Ni, Co, Cu, or Zn.

[0044] Based on 100 moles of the principal component, the first sub-component may be included in an amount greater than or equal to 0.1 moles or less than or equal to 1.0 moles. The content of the first sub-component may be the total content of Mn, V, Cr, Fe, Ni, Co, Cu, or Zn elements contained in the first sub-component, regardless of the form in which they are added (such as in the form of oxides or carbonates). For example, when V₂O₅ (an oxide of V) is included in 0.1 moles, the total content of element V may be 0.2 moles.

[0045] The first component is used to improve the reduction resistance of the dielectric ceramic composition in order to improve the high-temperature voltage resistance of multilayer ceramic electronic components with applied dielectric materials.

[0046] Second component

[0047] According to embodiments, the dielectric material according to this disclosure may contain at least one of a fixed-valence acceptor element containing Mg, its oxides, and its carbonates as a second component.

[0048] Based on 100 moles of the main component, the second sub-component may be included in an amount of less than or equal to 2.0 moles. The content of the second sub-component may be based on the content of Mg element contained in the second sub-component, regardless of the form of the element (such as oxide or carbonate). There is no lower limit to the content of the second sub-component. However, based on 100 moles of the main component, the lower limit of the second sub-component may be, for example, greater than or equal to 0 moles or greater than 0 moles, but is not limited thereto.

[0049] When the content of the second sub-component is greater than 2.0 moles based on 100 moles of the main component, the dielectric constant may decrease and the high-temperature withstand voltage characteristics may deteriorate.

[0050] Third component

[0051] According to an embodiment, the dielectric material according to this disclosure may include, as a third sub-component, at least one selected from the group consisting of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, Yb, their oxides and their carbonates.

[0052] Based on 100 moles of the principal component, the third sub-component may be included in an amount greater than or equal to 0.3 moles or less than or equal to 5.4 moles. The content of the third sub-component may be the total content of the elements Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb contained in the third sub-component, regardless of the form in which they are added (such as in the form of oxides or carbonates).

[0053] The third component can be used to prevent reliability degradation of multilayer ceramic electronic components with dielectric materials applied according to the example. When the third component is outside the above range, high-temperature withstand voltage characteristics may deteriorate.

[0054] Fourth component

[0055] According to an embodiment, the dielectric material according to this disclosure may include a fourth sub-component, which includes one or more of Ba and Ca, their oxides and their carbonates.

[0056] Based on 100 moles of the principal component, the fourth sub-component may be included in an amount of less than or equal to 5.0 moles. Based on 100 moles of the principal component, the lower limit for the fourth sub-component may be, for example, greater than or equal to 0 moles or greater than 0 moles. The content of the fourth sub-component may be the total content of Ba and Ca contained in the fourth sub-component, regardless of the form in which it is added (such as in the form of oxides or carbonates).

[0057] Based on a primary component of 100 moles, a fourth secondary component may be included in an amount of 5.0 moles to adjust the crystal structure of the dielectric material according to the present disclosure.

[0058] Fifth component

[0059] According to an embodiment, the dielectric material according to the present disclosure may include a fifth sub-component, which includes at least one selected from the group consisting of oxides of Si, carbonates of Si, and glasses containing Si.

[0060] Based on 100 moles of the principal component, the fifth sub-component may be included in an amount greater than or equal to 0.5 moles or less than or equal to 5.0 moles. The content of the fifth sub-component may be based on the content of Si element contained in the fifth sub-component, regardless of the form of Si element (such as oxide or carbonate form).

[0061] When the content of the fifth sub-component is less than 0.5 moles based on 100 moles of the main component, the dielectric constant and high-temperature withstand voltage may decrease. When the content of the fifth sub-component is greater than 5.0 moles, problems such as reduced sinterability and density, and the formation of secondary phases may occur.

[0062] Sixth component

[0063] According to an embodiment, the dielectric material according to this disclosure may include a sixth sub-component, which includes at least one selected from the group consisting of Na, Li, their oxides and their carbonates.

[0064] Based on 100 moles of the principal component, the sixth sub-component may be included in an amount less than or equal to 1.0 mole. Based on 100 moles of the principal component, the lower limit of the content of the sixth sub-component may be, for example, greater than or equal to 0 moles or greater than 0 moles.

[0065] The content of the sixth auxiliary component can be based on the total content of Na and Li elements contained in the sixth auxiliary component, regardless of the form in which they are added (such as oxides or carbonates). The sixth auxiliary component can be included as a sintering aid and can be used to lower the sintering temperature.

[0066] In the example, the dielectric ceramic composition according to this disclosure may comprise the aforementioned third, fourth, and fifth sub-components. Based on 100 molar parts of the main component, where the X-axis represents the molar parts of the fifth sub-component and the Y-axis represents the molar parts of the third sub-component (…), Figure 10When the sum of the molars of the third, fourth, and fifth subcomponents is the sum of the molars of the "RE" in the equation, the relationship between the molars of the third, fourth, and fifth subcomponents can be found within the boundary or interior of the quadrilateral connecting points A (0.500, 1.900), B (0.500, 3.10), C (5.000, 5.400), and D (5.000, 3.900).

[0067] Figure 10 The boundary and interior of the quadrilateral connecting points A, B, C, and D are shown. The boundary and interior of the quadrilateral connecting points A, B, C, and D can be confirmed by the embodiments described later.

[0068] This disclosure also relates to a multilayer ceramic electronic component.

[0069] Figure 1 This is a schematic perspective view of a multilayer ceramic electronic assembly according to an embodiment. Figure 2 It is along Figure 1 A cross-sectional view of a multilayer ceramic electronic component taken by line I-I' in the diagram. Figure 3 yes Figure 2 An enlarged view of area "A" in the image.

[0070] Reference Figures 1 to 3 According to an embodiment, the multilayer ceramic electronic component 100 may include a ceramic body 110, which includes a dielectric layer 111, a first internal electrode 121, and a second internal electrode 122. The multilayer ceramic electronic component 100 may include a first external electrode 131 and a second external electrode 132, which are respectively disposed on the outer surface of the ceramic body 110 and respectively connected to the first internal electrode 121 and the second internal electrode 122.

[0071] The shape of the ceramic body 110 is not limited, and can be a hexahedral shape or a hexahedral-like shape, as shown in the attached figures. Even if the ceramic body 110 does not have a perfectly straight hexahedral shape due to the shrinkage of the ceramic powder particles contained in the ceramic body 110 during the sintering process, the ceramic body 110 can still have a substantially hexahedral shape.

[0072] The ceramic body 110 can be formed by alternately stacking ceramic green sheets with a first internal electrode 121 printed on them and ceramic green sheets with a second internal electrode 122 printed on them in the thickness direction (Z direction).

[0073] In the ceramic body 110, dielectric layers 111 and internal electrodes 121 and 122 may be alternately stacked along a third direction. The plurality of dielectric layers 111 constituting the ceramic body 110 may be in a sintered state, and adjacent dielectric layers 111 may be integrated with each other such that the boundaries between them are indistinct without the use of a scanning electron microscope (SEM).

[0074] According to an embodiment, dielectric layer 111 may comprise the aforementioned dielectric material having a layered structure, and may comprise materials composed of (Ba... 1-x Ca x (Ti) 1-y Zr y O3、(Ba 1-x Ca x (Ti) 1-y Sn y )O3 or (Ba 1-x Ca x (Ti) 1-y Hf y The main component and secondary component are represented by O3 (0≤x≤1 and 0≤y≤0.05). In addition to the main component and secondary component of the dielectric material mentioned above, various ceramic additives, organic solvents, plasticizers, adhesives, dispersants, etc. may be added as materials for the dielectric layer 111 according to the purpose of this disclosure.

[0075] The dielectric layer 111 is formed by adding the required additives to a slurry (containing the aforementioned main and secondary components), coating the slurry onto a carrier film, and drying it on the carrier film to prepare a plurality of ceramic sheets. Each ceramic sheet can be prepared by forming the slurry into a sheet with a thickness of several micrometers (μm) using a doctor blade method, but this disclosure is not limited thereto.

[0076] In dielectric layer 111, when using Cu Kα1 radiation (wavelength) In the XRD pattern of a given XRD pattern, the angle corresponding to the maximum peak in the (002) and (200) planes is called θ0, and the angles corresponding to the full width at half maximum (FWHM) are called θ1 and θ2 (θ1 < θ2), respectively. Then, (θ2 - θ0) / (θ0 - θ1) can be greater than 0.54 and less than or equal to 1.0. Since the content related to the XRD pattern is the same as described above, a detailed description of it will be omitted.

[0077] The first internal electrode 121 and the second internal electrode 122 may be stacked such that their end surfaces are alternately exposed to the surfaces of two opposing ends of the ceramic body 110. The materials of the first internal electrode 121 and the second internal electrode 122 are not limited. For example, the first internal electrode 121 and the second internal electrode 122 may be formed using a conductive paste containing at least one of silver (Ag), palladium (Pd), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The printing method of the conductive paste may be screen printing, gravure printing, etc., but is not limited to these methods.

[0078] In a multilayer ceramic electronic assembly according to an example of the invention of this disclosure, a first external electrode 131 and a second external electrode 132 may be disposed on the outer surface of a ceramic body. The first external electrode 131 may be connected to a first internal electrode 121, and the second external electrode 132 may be connected to a second internal electrode 122.

[0079] The first external electrode 131 and the second external electrode 132 may contain a conductive metal. The conductive metal may be at least one of copper (Cu), nickel (Ni), tin (Sn), palladium (Pd), platinum (Pt), gold (Au), silver (Ag), tungsten (W), titanium (Ti), lead (Pb), and alloys thereof, but is not limited thereto.

[0080] In another example of the invention disclosed herein, the secondary components of the multilayer ceramic electronic assembly according to the present disclosure may include at least one of the following secondary components: a first secondary component comprising at least one compound selected from the group consisting of variable valence acceptor elements (including one or more elements selected from Mn, V, Cr, Fe, Ni, Co, Cu, and Zn), their oxides, and their carbonates; a second secondary component comprising at least one compound selected from the group consisting of fixed valence acceptor elements including Mg, their oxides, and their carbonates; and a third secondary component comprising a compound selected from the group consisting of Y, Dy, Ho, Er, Gd, Ce, The fourth subcomponent comprises at least one compound selected from the group consisting of Nd, Sm, Tb, Tm, La, Gd, and Yb, their oxides, and their carbonates; the fifth subcomponent comprises at least one compound selected from the group consisting of oxides of Si, carbonates of Si, and glasses containing Si; and the sixth subcomponent comprises at least one compound selected from the group consisting of compounds containing Na, compounds containing Li, their oxides, and their carbonates.

[0081] In another example of the invention disclosed herein, the secondary components of the multilayer ceramic electronic component may include: a third secondary component comprising at least one compound selected from the group consisting of compounds containing elements Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, or Yb; oxides containing elements Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, or Yb; and carbonates containing elements Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, or Yb; a fourth secondary component comprising at least one compound selected from the group consisting of compounds containing elements Ba or Ca, oxides containing elements Ba or Ca, and carbonates containing elements Ba or Ca; and a fifth secondary component comprising at least one compound selected from the group consisting of oxides of elements Si, carbonates of elements Si, and glasses containing elements Si. Based on 100 moles of the principal component, when the X-axis represents the moles of the fifth subcomponent and the Y-axis represents the sum of the moles of the third and fourth subcomponents, the relationship between the moles of the third, fourth, and fifth subcomponents can belong to the boundary or interior of the quadrilateral connecting points A (0.500, 1.900), B (0.500, 3.10), C (5.000, 5.400), and D (5.000, 3.900).

[0082] The detailed description of the dielectric material, main components, and secondary components is the same as that described above for the dielectric material according to the embodiments, and therefore will be omitted. Although a description of a multilayer ceramic electronic component as a multilayer ceramic capacitor has been given in this specification, this disclosure is not limited thereto.

[0083] Although this disclosure will be described in more detail below with reference to examples disclosed for illustrative purposes, it is not limited thereto.

[0084] Example

[0085] In this example, BaTiO3 powder particles with an average particle size of 100 nm were used as the raw material for the main component. The raw material powder particles, corresponding to the main and secondary components of compositions 1-1 to 5-3 listed in Table 1, were milled for 10 hours using zirconia balls as the mixing / dispersion medium and ethanol / toluene as the dispersant. After mixing the binder with the mixing solution, the raw material powder particles were milled for an additional 10 hours.

[0086] The Examples 1-2-A, 1-2-B, and 1-2-C listed in Table 1 represent the following examples: before the introduction of the binder, the milling time was increased to 15, 20, and 30 hours, respectively, to reduce the tetragonality (c / a) of the dielectric material (e.g., to increase the B / A of the XRD peak).

[0087] Molding sheets with thicknesses of 0.8 μm and 10 μm are manufactured using the prepared slurry through a molding machine used for manufacturing thin films. Nickel (Ni) internal electrodes are printed on each of the molding sheets.

[0088] The top and bottom covers are manufactured by stacking 25 layers of cover sheets (with a thickness of 10 μm to 13 μm), and the press rod is manufactured by pressing and stacking 21 layers of printed active sheet.

[0089] The pressing rods are cut into sheets with dimensions of 3.2 mm × 1.6 mm using a cutter. The fully manufactured MLCC sheets with dimensions 3216 are plasticized and then sintered at approximately 1080°C to 1120°C in a reducing atmosphere of 0.1% H₂ / 99.9% N₂ to 1.0% H₂ / 99.0% N₂ (H₂O / H₂ / N₂ atmosphere) for 10 minutes to 1 hour. The sintered MLCC sheets are then heat-treated in a N₂ atmosphere at approximately 950°C for 3 hours for re-oxidation.

[0090] The external electrode is completed by performing end-capping and electrode sintering processes on the sintered wafer using Cu paste. Therefore, an MLCC wafer with dimensions of 3.2 mm × 1.6 mm (dielectric material with a thickness of approximately 0.6 μm and 20 dielectric layers) is manufactured after sintering.

[0091] The room-temperature capacitance and dielectric loss of MLCC wafers were measured using an LCR meter at 1 kHz and AC 0.5 V / μm. The dielectric constant of the dielectric material in the MLCC wafer was calculated based on the capacitance and dielectric layer thickness, the area of ​​the internal electrodes, and the number of layers in the MLCC.

[0092] The room temperature insulation resistance IR was measured after 60 seconds with sampling at 10V and an application of DC 10V / μm.

[0093] The capacitance change based on temperature is measured within a temperature range of -55℃ to 145℃.

[0094] The high-temperature IR boost test measures the resistance degradation behavior while increasing the voltage step by 10V / μm DC at 150°C. The resistance value is measured every 5 seconds, and each step lasts for 1 hour. The high-temperature withstand voltage is obtained from the high-temperature IR boost test. The high-temperature withstand voltage refers to the ability to maintain an IR greater than or equal to 10 when a 5V / μm DC voltage level is applied to a 3216-sized wafer containing 20 dielectric layers after sintering, held at 150°C for 1 hour, and then continuously increased by 5V / μm in each step.6 The maximum voltage in Ω.

[0095] Table 1

[0096]

[0097] Table 2 shows the characteristics of the prototype pieces corresponding to the embodiments listed in Table 1.

[0098] Table 2

[0099]

[0100] Referring to Tables 2 and 4, the characteristic measurements are shown. In Tables 2 and 4, "O" indicates that all conditions are met (high DC bias field dielectric constant @ 8V / μm (dielectric constant when DC 8V / μm is applied) is greater than or equal to 1000, high temperature (150°C) withstand voltage is greater than or equal to 50V / μm, and the absolute value of the temperature coefficient of capacitance (TCC) (85°C) is less than 15%), and "X" indicates that any of the above conditions are not met.

[0101] Table 1 shows the variations in the content of the fourth sub-component, Ba or Ca, under fixed conditions: based on 100 mol of the main component, BaTiO3 with a size of 80 nm; the sum of the variable valence elements Mn and V in the first sub-component is 0.3 mol; the content of the second sub-component, Mg, is 0 mol; the content of the rare earth element Dy in the third sub-component is 0.3 mol; the content of the fifth sub-component, Si, is 0.5 mol; and the sum of the sixth sub-component, Na and Li, is 0.4 mol. Table 2 shows the characteristics of the prototype MLCC samples corresponding to Examples 1-1 to 1-4.

[0102] When the Ba content is 1.2 mol (Example 1-1), the B / A ratio of the (002) / (200) plane XRD peak is 0.50, and the high DC bias field dielectric constant is less than 1000. When the Ba content is increased to 2.0 mol (Example 1-2), the B / A ratio of the XRD peak increases to 0.58, and all the target characteristics of this disclosure are met, such as a high DC bias field dielectric constant @8V / μm (dielectric constant when DC 8V / μm is applied) greater than or equal to 1000, a high temperature (150°C) withstand voltage greater than or equal to 50V / μm, and an absolute value of TCC (85°C) less than 15%. Even when Ca with the same content is used instead of Ba (Example 1-3), substantially the same characteristics as in Example 1-2 are obtained. When the Ba content was further increased to 2.8 mol (Examples 1-4), the B / A ratio further increased to 0.92, and the high DC bias field dielectric constant @8V / μm also further increased to 1115.

[0103] Table 1 shows the variation in the content of the fourth sub-component, Ba, under fixed conditions: based on 100 mol of the main component, BaTiO3 with a size of 80 nm; the sum of the variable valence elements Mn and V in the first sub-component is 0.3 mol; the content of the second sub-component, Mg, is 0.2 mol; the content of the rare earth element Dy in the third sub-component is 0.3 mol; the content of the fifth sub-component, Si, is 1.25 mol; and the sum of the sixth sub-component, Na, and Li, is 1.0 mol. Table 2 shows the characteristics of the prototype MLCC samples corresponding to Examples 2-1 to 2-3.

[0104] When the Ba content is 1.6 mol (Example 2-1), the B / A ratio of the (002) / (200) plane XRD peak is 0.51 and the high DC bias field dielectric constant is less than 1000. When the Ba content is increased to 2.4 mol (Example 2-2), the B / A ratio of the XRD peak increases to 0.63, and all the target characteristics of this disclosure are satisfied, such as a high DC bias field dielectric constant @8V / μm (dielectric constant when DC 8V / μm is applied) greater than or equal to 1000, a high temperature (150°C) withstand voltage greater than or equal to 50V / μm, and an absolute value of TCC (85°C) less than 15%. When the Ba content is further increased to 3.2 mol (Example 2-3), the B / A ratio further increases to 0.82, and the high DC bias field dielectric constant @8V / μm also further increases to 1102.

[0105] Table 1 shows the variation in the content of the fourth sub-component, Ba, under fixed conditions: based on 100 mol of the main component, BaTiO3 with a size of 80 nm; the sum of the variable valence elements Mn and V in the first sub-component is 0.3 mol; the content of the second sub-component, Mg, is 0.2 mol; the content of the rare earth element Dy in the third sub-component is 1.4 mol; the content of the fifth sub-component, Si, is 2.75 mol; and the sum of the sixth sub-components, Na and Li, is 0.4 mol. Table 2 shows the characteristics of the prototype MLCC samples corresponding to Examples 3-1 to 3-3.

[0106] When the Ba content is 1.2 mol (Example 3-1), the B / A ratio of the (002) / (200) plane XRD peak is 0.48, and the high DC bias field dielectric constant is less than 1000. When the Ba content is increased to 2.0 mol (Example 3-2), the B / A ratio of the XRD peak increases to 0.66, and all the target characteristics of this disclosure are met, such as a high DC bias field dielectric constant @8V / μm (dielectric constant when DC 8V / μm is applied) greater than or equal to 1000, a high temperature (150°C) withstand voltage greater than or equal to 50V / μm, and an absolute value of TCC (85°C) less than 15%. When the Ba content is further increased to 2.8 mol, the B / A ratio further increases to 0.94, and the high DC bias field dielectric constant @8V / μm also further increases to 1123.

[0107] Table 1 shows the variation in the content of the fourth sub-component, Ba, under fixed conditions: based on 100 mol of the main component, BaTiO3 with a size of 80 nm; the sum of the variable valence elements Mn and V in the first sub-component is 0.3 mol; the content of the second sub-component, Mg, is 2.0 mol; the content of the rare earth element Dy in the third sub-component is 1.0 mol; and the content of the fifth sub-component, Si, is 3.38 mol. Table 2 shows the characteristics of the prototype MLCC samples corresponding to Examples 4-1 to 4-4.

[0108] When the Ba content is 1.85 mol (Example 4-1), the B / A ratio of the (002) / (200) plane XRD peak is 0.48, and the high DC bias field dielectric constant is less than 1000. When the Ba content is increased to 2.7 mol (Example 4-2), the B / A ratio of the XRD peak increases to 0.60, and all the target characteristics of this disclosure are met, such as a high DC bias field dielectric constant @8V / μm (dielectric constant when DC 8V / μm is applied) greater than or equal to 1000, a high temperature (150°C) withstand voltage greater than or equal to 50V / μm, and an absolute value of TCC (85°C) less than 15%. Even when Ca is substituted for Ba with the same content (Example 4-3), substantially the same characteristics as in Example 4-2 are obtained. When the Ba content is further increased to 3.65 mol, the B / A ratio further increases to 0.92, and the high DC bias field dielectric constant @8V / μm also further increases to 1133.

[0109] Table 1 shows the variation in the content of the fourth sub-component, Ba, under fixed conditions: based on 100 mol of the main component, BaTiO3 with a size of 80 nm; the sum of the variable valence elements Mn and V in the first sub-component is 1.0 mol; the content of the second sub-component, Mg, is 1.0 mol; the content of the rare earth element Dy in the third sub-component is 1.0 mol; and the content of the fifth sub-component, Si, is 5.00 mol. Table 2 shows the characteristics of the prototype MLCC samples corresponding to Examples 5-1 to 5-3.

[0110] When the Ba content is 2.4 mol (Example 5-1), the B / A ratio of the (002) / (200) plane XRD peak is 0.52, and the high DC bias field dielectric constant is less than 1000. When the Ba content is increased to 3.4 mol (Example 5-2), the B / A ratio of the XRD peak increases to 0.61, and all the target characteristics of this disclosure are satisfied, such as a high DC bias field dielectric constant @8V / μm (dielectric constant when DC 8V / μm is applied) greater than or equal to 1000, a high temperature (150°C) withstand voltage greater than or equal to 50V / μm, and an absolute value of TCC (85°C) less than 15%. When the Ba content is further increased to 4.4 mol, the B / A ratio further increases to 0.85, and the high DC bias field dielectric constant @8V / μm also further increases to 1098.

[0111] In Table 1, Examples 1-2-A to 1-2-C are examples of batch slurry mixing and grinding times when the by-products corresponding to Examples 1-2 are applied to 100 moles of the main component of raw material BaTiO3 with a size of 80 nm. Table 2 shows the characteristics of the prototype MLCC samples corresponding to Examples 1-2-A to 1-2-C.

[0112] The mixing and milling times for Examples 1-2, 1-2-A, 1-2-B, and 1-2-C were 10, 15, 20, and 30 hours, respectively. As the mixing and milling time increased to 10, 15, and 20 hours, the high DC bias field dielectric constant @8V / μm increased to 1018, 1084, and 1103, respectively, while the B / A ratio of the (002) / (200) plane XRD peak increased to 0.58, 0.70, and 0.85, respectively. Therefore, even when the tetragonality (c / a) of the dielectric material was reduced and the B / A ratio of the XRD peak was increased by increasing the mixing and milling time, rather than by adjusting the composition of the by-component additives, the high DC bias field dielectric constant @8V / μm was improved. On the other hand, when the mixing and milling time is excessively increased to 30 hours (in the 1-2-C example), the grain size of the dielectric material increases rapidly, causing the B / A ratio of the XRD peak to decrease so that the high DC bias field dielectric constant @8V / μm decreases rapidly to 726.

[0113] Table 3

[0114]

[0115] Table 4

[0116]

[0117] In Table 3, Examples 6 to 14 used the secondary components corresponding to Examples 1-2, and are examples of variations in the composition of the raw materials with a size of 100 nm for the main component. Table 4 shows the characteristics of the prototype MLCC samples of Examples 6 to 14.

[0118] When a portion of Ti was replaced by Zr, as the Zr content increased from 0 to 0.020 and 0.050 (Examples 1-2, 6, and 7), the B / A ratio of the (002) / (200) plane XRD peak increased from 0.58 to 0.71 and 0.84, and the high DC bias dielectric constant @8V / μm increased from 1018 to 1117 and 1205, while the 85°C TCC decreased from -11.8% to -12.6% and -14.7%. Therefore, it can be confirmed that even when the B / A ratio of the (002) / (200) plane XRD peak is increased by replacing a portion of the Ti element with Zr, rather than by adjusting the composition of the by-component additives, the high DC bias dielectric constant @8V / μm is also improved. On the other hand, when the Zr content increases excessively from 0 to 0.070 (Example 8), the B / A ratio of the XRD peak further increases, and the high DC bias field dielectric constant @8V / um further increases to 1284, but the TCC at 85℃ also decreases to -18.4%, resulting in the TCC characteristics not meeting the requirements. Therefore, in the formula Ba(Ti 1-y Zr y In O3, the Zr content in the main component is in the range of 0 to 0.05, which satisfies the target characteristics of this disclosure.

[0119] In Table 3, Examples 9 to 11 and Examples 12 to 14 are examples in which a portion of the main component Ti is replaced by Sn and Hf, and their contents are in the formula Ba(Ti 1-y Sn y O3 (Examples 9 to 11) and Ba(Ti) 1-y Hf y Examples of O3 (Examples 12 to 14) with values ​​increased to 0.020, 0.050, and 0.070. Table 4 shows the characteristics of the prototype MLCC samples corresponding to Examples 9 to 11 and Examples 12 to 14.

[0120] Similar to the case where Zr is substituted, as the content of Sn and Hf increases to 0.020 and 0.050 (Examples 9, 10, 12, and 13), the 85°C TCC decreases to within the range that meets specifications, the B / A ratio of the (002) / (200) plane XRD peak increases, and the high DC bias field dielectric constant @8V / μm increases. On the other hand, when the content of Sn and Hf is excessively increased to 0.070 (Examples 11 and 14), the B / A ratio of the XRD peak further increases, and the high DC bias field dielectric constant @8V / μm also further increases, but the 85°C TCC does not meet the X5R TCC characteristics (required within ±15%). Therefore, when in formula Ba(T 1-y Sn y O3 and Ba(T)1-y Hf y When the content of Zr, Sn, or Hf in the main component of O3 is in the range of 0 to 0.05, it satisfies the target characteristics of this disclosure.

[0121] Furthermore, the results of Examples 1-4, 2-3, 3-3, 4-4, and 5-3 confirm that the basis is... Figure 10 The boundary value of the sum of the contents of the third and fourth sub-components is shown in the figure. Furthermore, it is confirmed that Examples 1-2, 2-2, 3-2, 4-2, and 5-2 meet the characteristic determination criteria, while Examples 1-1, 2-1, 3-1, 4-1, and 5-1 do not. Since it is confirmed that the characteristic determination criteria vary at intermediate values ​​in Examples 1-1, 2-1, 3-1, 4-1, and 5-1, as well as Examples 1-2, 2-2, 3-2, 4-2, and 5-2, the intermediate values ​​of the above examples are determined as boundary values. As a result, it is confirmed that when the content ranges of the third, fourth, and fifth sub-components fall within the connecting range... Figure 10 When the quadrilaterals A, B, C, and D are within the boundaries or interior of the quadrilaterals, they exhibit improved high-temperature pressure resistance and high DC bias field characteristics.

[0122] As described above, according to this disclosure, dielectric materials and multilayer ceramic electronic components with improved DC bias field dielectric constants can be provided.

[0123] In addition, dielectric materials and multilayer ceramic electronic components with improved high-temperature and high-voltage resistance properties can be provided.

[0124] In addition, dielectric materials and multilayer ceramic electronic components that meet X5R requirements can be provided.

[0125] Although embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of this disclosure as defined by the appended claims.

Claims

1. A dielectric material, comprising: Principal component, composed of (Ba 1-x Ca x (Ti) 1-y Zr y O3、(Ba 1-x Ca x (Ti) 1-y Sn y )O3 or (Ba 1-x Ca x (Ti) 1-y Hf y O3 represents, where 0 ≤ x ≤ 1 and 0 ≤ y ≤ 0.05, and accessory ingredients, In the X-ray diffraction pattern of Cu Kα1 radiation with a wavelength λ of 1.5406 Å, among the peaks of the (002) and (200) planes, (θ2-θ0) / (θ0-θ1) is greater than 0.54 and less than or equal to 1.0, where θ0 is the angle corresponding to the maximum peak, and θ1 and θ2 are the angles corresponding to the full width at half maximum (FWHM), where θ1 < θ2. The secondary component includes a fourth secondary component, which comprises one of a compound containing Ba and a compound containing Ca. The fourth sub-component comprises, in an amount greater than or equal to 2.0 moles and less than or equal to 5.0 moles, based on 100 moles of the principal component.

2. The dielectric material according to claim 1, wherein, The dielectric material comprises grains and grain boundaries.

3. The dielectric material according to claim 1, wherein, The secondary component further includes at least one of a first secondary component, a second secondary component, a third secondary component, a fifth secondary component, and a sixth secondary component, wherein: The first sub-component comprises a compound of at least one element selected from variable valence acceptor elements including Mn, V, Cr, Fe, Ni, Co, Cu, and Zn; The second sub-component comprises a compound of at least one element selected from fixed-valence acceptor elements containing Mg; The third sub-component comprises a compound containing at least one element selected from elements including Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb; The fifth sub-component comprises at least one compound selected from the group consisting of: oxides of Si, carbonates of Si, and glasses containing Si; and The sixth sub-component comprises a compound of at least one element selected from elements containing Na and Li.

4. The dielectric material according to claim 1, wherein, The secondary component further includes a first secondary component comprising a compound of at least one element selected from variable-valence acceptor elements including Mn, V, Cr, Fe, Ni, Co, Cu, and Zn. Based on 100 moles of the main component, the first secondary component is included in the range of greater than or equal to 0.1 moles and less than or equal to 1.0 moles.

5. The dielectric material according to claim 1, wherein, The secondary component further comprises a second secondary component, the second secondary component comprising a compound of at least one element selected from fixed-valence acceptor elements containing Mg, and The second secondary component is contained in a range of less than or equal to 2.0 moles, based on 100 moles of the main component.

6. The dielectric material according to claim 1, wherein, The secondary component further comprises a third secondary component, which is a compound comprising at least one element selected from elements including Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb. The third secondary component is contained in a range of greater than or equal to 0.3 moles and less than or equal to 5.4 moles, based on 100 moles of the principal component.

7. The dielectric material according to claim 1, wherein, The secondary component further comprises a fifth secondary component, which includes at least one selected from the group consisting of: oxides of Si, carbonates of Si, and glasses containing Si. The fifth secondary component is included in a range of greater than or equal to 0.5 moles and less than or equal to 5.0 moles based on 100 moles of the main component.

8. The dielectric material according to claim 1, wherein, The secondary component further includes a sixth secondary component, which comprises a compound of at least one element selected from elements containing Na and Li, and The sixth sub-component comprises an amount of less than or equal to 1.0 mole of the principal component, based on 100 moles of the principal component.

9. The dielectric material according to claim 1, wherein, The secondary components also include a third secondary component and a fifth secondary component, wherein: The third sub-component comprises a compound containing at least one element selected from elements comprising Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb; and The fifth sub-component comprises at least one compound selected from the group consisting of: oxides of Si, carbonates of Si, and glasses containing Si. Based on 100 moles of the principal component, when the X-axis represents the mole of the fifth sub-component and the Y-axis represents the sum of the moles of the third and fourth sub-components, the relationship between the moles of the third, fourth, and fifth sub-components belongs to the boundary or interior of the quadrilateral connecting points A (0.500, 1.900), B (0.500, 3.10), C (5.000, 5.400), and D (5.000, 3.900).

10. A multilayer ceramic electronic component, comprising: The ceramic body includes a dielectric layer, a first internal electrode, and a second internal electrode; as well as The first external electrode and the second external electrode are respectively disposed on the outer surface of the ceramic body and are respectively connected to the first internal electrode and the second internal electrode. The dielectric layer comprises (Ba) 1-x Ca x (Ti) 1-y Zr y O3、(Ba 1-x Ca x (Ti) 1-y Sn y )O3 or (Ba 1-x Ca x (Ti) 1-y Hf y O3 represents the principal components and secondary components, where 0 ≤ x ≤ 1 and 0 ≤ y ≤ 0.

05. In the X-ray diffraction pattern of Cu Kα1 radiation with a wavelength λ of 1.5406 Å, among the peaks of the (002) and (200) planes, (θ2-θ0) / (θ0-θ1) is greater than 0.54 and less than or equal to 1.0, where θ0 is the angle corresponding to the maximum peak, and θ1 and θ2 are the angles corresponding to the full width at half maximum (FWHM), where θ1 < θ2. The secondary component includes a fourth secondary component, which comprises one of a compound containing Ba and a compound containing Ca. The fourth sub-component comprises, in an amount greater than or equal to 2.0 moles and less than or equal to 5.0 moles, based on 100 moles of the principal component.

11. The multilayer ceramic electronic component according to claim 10, wherein, The secondary component further includes at least one of the following: a first secondary component, a second secondary component, a third secondary component, a fifth secondary component, and a sixth secondary component: The first sub-component comprises a compound of at least one element selected from variable valence acceptor elements including Mn, V, Cr, Fe, Ni, Co, Cu, and Zn; The second sub-component comprises a compound of at least one element selected from fixed-valence acceptor elements containing Mg; The third sub-component comprises a compound containing at least one element selected from elements including Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb; The fifth sub-component comprises at least one compound selected from the group consisting of: oxides of Si, carbonates of Si, and glasses containing Si; and The sixth sub-component comprises a compound of at least one element selected from elements containing Na and Li.

12. The multilayer ceramic electronic component according to claim 10, wherein, The secondary components of the multilayer ceramic electronic assembly further include a third secondary component and a fifth secondary component, wherein: The third sub-component comprises a compound containing at least one element selected from elements comprising Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb; and The fifth sub-component comprises at least one compound selected from the group consisting of: oxides of Si, carbonates of Si, and glasses containing Si. Wherein, based on 100 moles of the principal component, when the X-axis represents the mole of the fifth sub-component and the Y-axis represents the sum of the moles of the third and fourth sub-components, the relationship between the moles of the third, fourth, and fifth sub-components belongs to the boundary or interior of the quadrilateral connecting points A (0.500, 1.900), B (0.500, 3.10), C (5.000, 5.400), and D (5.000, 3.900).

13. The multilayer ceramic electronic component according to claim 10, wherein, (θ2-θ0) / (θ0-θ1) is greater than or equal to 0.

56.

14. The multilayer ceramic electronic component according to claim 10, wherein, (θ2-θ0) / (θ0-θ1) is greater than or equal to 0.

58.

15. The multilayer ceramic electronic component according to claim 10, wherein, (θ2-θ0) / (θ0-θ1) is less than 1.

0.

16. A dielectric material, comprising: By(Ba 1-x Ca x (Ti) 1-y Zr y O3、(Ba 1-x Ca x (Ti) 1-y Sn y )O3 or (Ba 1-x Ca x (Ti) 1-y Hf y O3 represents the principal component, where 0 ≤ x ≤ 1 and 0 ≤ y ≤ 0.05, and The secondary components include the third, fourth, and fifth secondary components. The third sub-component comprises a compound containing at least one element selected from elements including Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd, and Yb; The fourth sub-component includes one of a compound containing Ba and a compound containing Ca; The fifth sub-component comprises at least one compound selected from the group consisting of: oxides of Si, carbonates of Si, and glasses containing Si. Based on 100 moles of the principal component, when the X-axis represents the mole fraction of the fifth sub-component and the Y-axis represents the sum of the moles of the third and fourth sub-components, the relationship between the moles of the third, fourth, and fifth sub-components belongs to the boundary or interior of the quadrilateral connecting points A (0.500, 1.900), B (0.500, 3.10), C (5.000, 5.400), and D (5.000, 3.900). The principal component, based on 100 molar parts, comprises a fourth secondary component in an amount greater than or equal to 2.0 molar parts and less than or equal to 4.4 molar parts. In the X-ray diffraction pattern of Cu Kα1 radiation with a wavelength of 1.5406 Å, among the peaks of the (002) and (200) planes, (θ2-θ0) / (θ0-θ1) is greater than 0.54 and less than or equal to 1, where θ0 is the angle corresponding to the maximum peak, and θ1 and θ2 are the angles corresponding to the full width at half maximum (FWHM), where θ1 < θ2.

17. The dielectric material according to claim 16, wherein, The secondary component also includes a first secondary component. The first sub-component comprises a compound of at least one element selected from variable-valence acceptor elements including Mn, V, Cr, Fe, Ni, Co, Cu, and Zn.

18. The dielectric material according to claim 16, wherein, The secondary component also includes a second secondary component. The second sub-component comprises a compound of at least one element selected from fixed-valence acceptor elements containing Mg.

19. The dielectric material according to claim 16, wherein, (θ2-θ0) / (θ0-θ1) is greater than or equal to 0.58 and less than or equal to 0.94.

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